JP2016080885A - Method for peeling pellicle, method for regenerating pellicle-fitted photomask, pellicle peeling device and light-shielding film deposition device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a means of peeling a pellicle fixed on a photomask via an adhesive without leaving adhesive residue on the photomask when it is separated from the photomask.SOLUTION: Provided is a method for peeling a pellicle 1 including a pellicle-fitted photomask 200 adhered on a light shielding film 4 via an adhesive 3 in a frame 2 stretched with the pellicle 1 at a photomask 100 formed with a light shielding pattern on a quartz substrate 5, in which laser light with a wavelength of 200 nm or higher is applied to the light shielding film on the back face of the frame 2 from the photomask side, the joining between the quartz substrate 1 and the light shielding film 4 is weaken, and then, the frame 2 and the photomask are separated.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a photomask used for manufacturing a semiconductor device, and more particularly to a method for peeling a dustproof pellicle from a photomask main body to prevent dust adhering to the mask and a technique for reproducing the entire photomask thereafter. .

In semiconductor integrated circuits and displays, miniaturization and high integration of circuits are progressing in order to improve performance and productivity. With regard to lithography technology for forming circuit patterns, finer patterns can be formed with high accuracy. Technology development is underway.
However, dust that has been overlooked before the circuit pattern is miniaturized becomes a foreign substance due to the miniaturization and adheres to the pattern of the photomask, resulting in a decrease in manufacturing yield. Therefore, a dust cover called a pellicle is provided on the photomask to prevent foreign matter from adhering.

  The basic configuration of the pellicle itself is generally a configuration in which a resin transparent to the wavelength of the light source is stretched on one side of a frame in which a metal such as aluminum is black anodized and the center is opened. As the transparent resin, nitrocellulose, cellulose acetate, a fluorine-based polymer, or the like is used. An adhesive is applied to the frame opposite to the frame surface on which the resin is stretched to adhere to the photomask. As the adhesive, a resin material made of polybutene resin, polyvinyl acetate resin, acrylic resin, silicone resin, or the like is used. A protective film called a liner is provided on the resin surface before mounting on the photomask.

  It may be necessary to peel the pellicle even after it is once mounted on the photomask. For example, when the pellicle is mounted on a photomask, it cannot be mounted at the correct position, or the resin film may be wrinkled or torn during mounting. In some cases, the pellicle needs to be replaced depending on the lifetime, for example, the resin film deteriorates due to light irradiation due to use in an exposure apparatus, and a predetermined transmittance cannot be maintained with respect to the light source wavelength.

  When it is necessary to replace the pellicle for the above reasons, conventionally, the adhesive is softened by heat and pulled mechanically, and the frame and the photomask are separated (Patent Document 1) or by irradiation with ultraviolet rays having a wavelength of 200 nm or less. A technique and a related apparatus (Patent Document 2) have been developed in which the agent is deteriorated so that it can be easily separated and then removed.

JP 2008-304886 A JP 2009-301022 A

However, when the pellicle is peeled off and replaced by the above means and reused as a photomask with a pellicle, it is difficult to peel the pellicle without leaving an adhesive residue on the photomask surface. For this reason, a method of decomposing and dissolving the residual material by washing has been adopted.
At this time, there is a case in which a decomposed substance or a dissolved substance is left in a region where a light shielding pattern is formed on the photomask, which causes a problem that the light shielding pattern region to be originally protected is contaminated.

  The present invention has been made in view of this point, and an object of the present invention is to remove an adhesive and an adhesive residue on a photomask when a pellicle fixed to the photomask via an adhesive is separated from the photomask. The present invention provides a means for peeling without leaving a film and a method for regenerating a photomask.

To achieve the above object, the invention according to claim 1 is directed to a pellicle in which a frame in which a pellicle is stretched on a photomask having a light shielding film pattern formed on a quartz substrate is bonded to the light shielding film via an adhesive. A method for peeling the pellicle from the attached photomask together with the frame,
The pellicle peeling method is characterized in that laser light having a wavelength of 200 nm or more is irradiated from the photomask side to the light shielding film on the back surface of the frame to weaken the bonding between the quartz substrate and the light shielding film, and then the frame and the photomask are separated. Is.

  The invention according to claim 2 is the pellicle peeling method according to claim 1, wherein the light shielding film is formed by laminating a metal, a metal oxide film, and a metal oxynitride film in this order. Is.

  The invention according to claim 3 is characterized in that the wavelength of the laser beam is a third harmonic (355 nm) or a fourth harmonic (266 nm) of a YAG laser. The pellicle peeling method described in 1. above.

  The invention described in claim 4 is a method for regenerating a photomask from which the pellicle has been removed by the peeling method according to any one of claims 1 to 3, wherein the light shielding film is peeled off at the site. This is a method for regenerating a photomask with a pellicle, in which a light shielding film is newly formed and then a frame on which the pellicle is stretched is adhered to the light shielding film via an adhesive.

According to a fifth aspect of the present invention, the light shielding film irradiates a mixed gas of Si ₂ H ₆ gas, C ₂ H ₂ gas and H ₂ (hydrogen) with a third harmonic (355 nm) of a YAG laser. 5. The method for regenerating a photomask with a pellicle according to claim 4, wherein the photomask is deposited by photo-CVD.

According to a sixth aspect of the present invention, the light-shielding film includes phenanthrene (C ₁₄ H ₁₀ ), chromium carbonyl (Cr (CO) ₆ ), tungsten carbonyl (W (CO) ₆ ), tungsten fluoride (WF _6). 5) A method for regenerating a photomask with a pellicle according to claim 4, wherein deposition is performed by irradiating an electron beam to any gas or mixed gas of tetraethoxysilane (TEOS).

In the invention according to claim 7, the light-shielding film includes phenanthrene (C ₁₄ H ₁₀ ), benzene (C ₆ H ₆ ), styrene (C ₈ H ₈ ), naphthalene (C ₁₀ H ₈ ), pyrene ( Hydrocarbon gas selected from C ₁₆ H ₁₀ , tungsten carbonyl (W (CO) ₆ ), tungsten fluoride (WF ₆ ), chromium carbonyl (Cr (CO) ₆ ), cobalt carbonyl (Co ₂ (CO 2 ₈ ), a metal-containing gas selected from iron carbonyl (Fe (CO) ₅ ), Trimethyl (methylcyclopentadienyl) platinum (MeCpPt (Me) ₃ ), tetraethoxysilane (TEOS), 1,3,5,7-tetramethylcyclotetra -Of silicone-containing gas selected from Siloxane Is obtained by the reproduction method of the pellicle photomask of claim 4, wherein the depositing and irradiating a focused ion beam or deviation.

The invention described in claim 9 is a loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A pellicle peeling mechanism including a camera and a laser light source;
And a pellicle peeling apparatus characterized by having a device control mechanism.
The invention according to claim 10 is a loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A light-shielding film deposition mechanism comprising a camera, a laser light source, and a gas supply unit;
And a light-shielding film deposition apparatus characterized by having a device control mechanism.

The invention according to claim 11 is a loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A pellicle peeling mechanism including a camera and a laser light source;
A pellicle peeling apparatus comprising the light-shielding film deposition mechanism according to claim 10.

  In a pellicle installed for the purpose of preventing foreign matter adhesion to a photomask used in lithography such as semiconductors, when replacing the pellicle with a new one due to deterioration or damage due to exposure, in the present invention, between the adhesive and the quartz substrate The light shielding film interposed between the two is irradiated with laser light to weaken the adhesion of the light shielding film to the quartz substrate. Therefore, when the frame on the pellicle side and the photomask are separated, separation occurs at the interface between the quartz substrate and the light shielding film, and the adhesive is removed along with the underlying light shielding film.

  As a result, the adhesive does not remain on the light-shielding film of the photomask, and there is no need for a complicated cleaning process for dissolving and removing the adhesive. Therefore, there is an effect that the adhesive residue does not remain on the circuit pattern of the photomask.

  The chamber necessary for peeling the pellicle together with the frame and the chamber for depositing and regenerating the light shielding layer at the peeled portion both require a laser light source and the like, but can be structurally common. Since the loader mechanism and the vacuum replacement mechanism in the previous process of the processing chamber can be made common, the pellicle peeling mechanism and the light shielding film deposition mechanism can be incorporated in the same apparatus.

It is a figure which shows an example of the reflection spectrum of a photomask. It is the figure of the top view (a) and sectional view (b) explaining the structure of the photomask with a pellicle. It is the schematic diagram of the cross-sectional view explaining the pellicle peeling method of this invention. (A) Laser irradiation, (b) peeling. It is a figure of the cross-sectional view explaining the method of light shielding film reproduction | regeneration (deposition) of the light shielding film peeling part of this invention. It is a figure of the cross-sectional view explaining the structure of the pellicle peeling apparatus of this invention. It is a process flow figure of the pellicle peeling method of the present invention. It is a figure of the cross-sectional view explaining the structure of the light shielding film deposition apparatus of this invention It is a flowchart of the light shielding film deposition processing process of this invention.

The pellicle peeling method according to the present invention is a method in which a pellicle film is stretched on one end face of a frame and the other end face is bonded and fixed to a photomask through an adhesive, and the pellicle for lithography is peeled off from the photomask together with the frame. Then, light having a wavelength longer than 200 nm is irradiated in the vicinity of the adhesion site to weaken the adhesion between the light shielding layer and the quartz substrate, and then the pellicle stretching frame and the adhesion layer are peeled off from the photomask together with the light shielding film. It is characterized by that.

  After reviewing the optical characteristics of the photomask used in the present invention and the configuration of the photomask with the pellicle mounted thereon, a method for peeling the pellicle and re-forming the light shielding layer will be described.

  FIG. 1 shows a reflection spectrum of a photomask. FIG. 1 shows a binary photomask mainly composed of two types of chromium. As such a photomask, TLR-6 manufactured by Toppan Printing Co., Ltd. and AR8 manufactured by HOYA can be exemplified. The reflectivity of these photomasks is as low as about 17% at a light source wavelength of 266 nm and about 12% at a wavelength of 355 nm, and the ratio of being transmitted through the photomask or absorbed by chromium is reflected at both wavelengths. It shows more. In FIG. 1, since the reflectance at a wavelength of 355 nm is lower than 266 nm, 355 nm is suitable for the selection of the light source wavelength of the present invention described later.

  A basic configuration of a photomask 200 equipped with a pellicle used in the present invention will be described with reference to FIG. FIG. 2 is a plan view and a cross-sectional view in which a frame 2 (hereinafter simply referred to as a pellicle 150) in which a pellicle film 1 is stretched on a photomask 100 is mounted. In the pellicle 150, a pellicle film 1 made of a polymer resin material mainly composed of cellulose or fluororesin is stretched on a frame 2 in which aluminum (Al) or an alloy mainly composed of aluminum is subjected to blackening treatment called alumite. The adhesive 3 is applied to the other end surface of the frame and joined to the photomask. Dust sometimes accumulates on the pellicle, but does not form an image in the resist at this position.

  Before fixing the pellicle 150 to the photomask 100, a protective film called a liner (not shown) is temporarily attached to the adhesive 3 portion of the pellicle 150 at the time of shipment. The liner is removed for bonding to the photomask 100. The size of the frame 2 includes an area larger than the area of the circuit pattern 6. The part where the adhesive 3 adheres to the photomask 100 is the outer peripheral portion of the light shielding film 4 on which the circuit pattern 6 is formed, and is on the light shielding film 4.

  The light shielding film 4 is formed on the substrate 5 by a film forming method such as sputtering. The light-shielding film 4 is composed of chromium (Cr) or its oxide, oxynitride or synthetic material mainly composed of molybdenum (Mo) and silicon (Si), its oxide, oxynitride, tantalum (Ta) or its oxidation. And oxynitride. The substrate 5 is quartz.

The pellicle peeling method according to the present invention will be described with reference to FIG.
First, as shown in FIG. 3A, the photomask 100 on which the pellicle 150 is mounted is placed on the pedestal 11 with the pellicle side facing down. Next, the support pins 12 extending from the elevating stage 13 installed outside the pedestal 11 contact the frame to support the pellicle 200.

  Next, the laser beam emitted from the light source 7 is transmitted through the photomask substrate 5 and irradiated to the vicinity of the region where the frame 2 or the adhesive 3 is present. This laser light actually irradiates the portion of the light shielding film 4 positioned immediately above the adhesive 3, and weakens the adhesion between the light shielding film 4 and the substrate 5 at the irradiated portion to facilitate separation. As described above, the irradiation light preferably has a wavelength of 355 nm, which is the third harmonic of a YAG laser having a low reflectance, and may be a fourth harmonic. The light intensity can be selected according to the material of the light shielding film 4. The material of the light shielding film 4 is the above-described chromium (Cr), its oxide, oxynitride, a synthetic material mainly composed of molybdenum (Mo) and silicon (Si), its oxide, or oxynitride.

  Next, when the elevating stage 13 is lowered to the lower side of the drawing while holding the pellicle 150, the pellicle 150 is separated from the substrate 5. At this time, since the adhesive 3 is integrated with the light shielding film 4, the light shielding film 4 is separated. Therefore, the adhesive 3 does not remain on the photomask 100 side. On the other hand, since the light shielding film 4 is peeled off from the surface of the substrate 5, the surface of the substrate material is exposed to form a light shielding film peeling portion 4a (FIG. 3B).

For the adhesive 3, acrylic, silicone, and fluorine resin materials are often used. In the case of the conventional method in which any adhesive 3 is peeled off at the interface with the light-shielding film 4, it is necessary to use wet cleaning for removing the adhesive. Wet cleaning is a method that uses oxidative decomposition with a chemical mixture of sulfuric acid and hydrogen peroxide, but in the case of a fluorine-based resin, there is a problem that it remains on the photomask without being decomposed. There is also a possibility that the adhesive dissolution residue may remain in the circuit pattern region.
Although the adhesive 3 is used in the present invention, the adhesive 3 is peeled off at the interface between the light-shielding film 4 and the substrate 5, so that it is not necessary to select the material of the adhesive 3 because the adhesive is taken up and removed.

Next, with reference to FIG. 4, a method of performing a light-shielding process (reproduction process of a photomask with a pellicle) on the light-shielding film peeling portion 4a where the substrate surface after pellicle separation is exposed will be described.
In the partial deposition of the light shielding film, first, the light shielding film peeling portion of the photomask 100 is set on the base 11 with the upper side in the drawing. An example of a photo-CVD method using SiC as a light shielding film material is shown. CVD is an abbreviation for Chemical Vapor Deposition, and is a method for forming a deposited film by a light-gas reaction using light as energy.

Next, SiC film formation by this photo-CVD method is performed to a predetermined film thickness. Generally, it is preferable that the optical density (OD: Optical Density) with respect to the wavelength of the exposure light is 3 or more. In this embodiment, Si ₂ H ₆ gas is used as the Si (silicone) material source, C ₂ H ₂ gas is used as the C (carbon) material, and H ₂ (hydrogen) is used as the carrier gas from the gas supply unit 8. Supply. The pressure in the processing chamber 23 was 2 to 8 Torr. The light source film 7 irradiates the light shielding film peeling portion with a wavelength of 355 nm, which is the third harmonic of the YAG laser. The oscillation frequency of the laser was 20 Hz.

In addition to the above-mentioned photo-CVD method, the light-shielding treatment may be a film forming method in which a known light source 7 is a focused ion beam and reacted with a gas, or a film forming method in which the light source 7 is an electron beam and reacted with a gas.
For example, a hydrocarbon gas selected from phenanthrene (C ₁₄ H ₁₀ ), benzene (C ₆ H ₆ ), styrene (C ₈ H ₈ ), naphthalene (C ₁₀ H ₈ ), and pyrene (C ₁₆ H ₁₀ ) There is a method of irradiating a focused ion beam. A mixed gas may be used.

Moreover, tungsten carbonyl (W (CO) ₆ ), tungsten fluoride (WF ₆ ), chromium carbonyl (Cr (CO) ₆ ), cobalt carbonyl (Co ₂ (CO) ₈ ), iron carbonyl (Fe (CO) ₅ ) There is a method of irradiating a focused ion beam to a metal-containing gas selected from Trimethyl (methylcyclodienyl) platinum (MeCpPt (Me) ₃ ). A mixed gas may be used.

  Furthermore, there is a method of irradiating a focused ion beam to a silicone-containing gas selected from tetraethoxysilane (TEOS) and 1,3,5,7-tetramethylcyclotetra-Siloxane. A mixed gas may be used.

  FIG. 5 shows an outline of a pellicle peeling apparatus 300 in which the above method is implemented, and FIG. 6 shows a process flowchart. In FIG. 5, common parts are shown together in order to suggest matching with FIG. 7 described later and re-shielding processing (shielding film deposition) described later. The peeling apparatus 300 includes a loader mechanism 21, a vacuum replacement mechanism 22, a pellicle peeling mechanism 23, and various control mechanisms 24, and has a corresponding chamber and a control device.

  First, the photomask 100 on which the pellicle 150 is mounted is placed on the base 11 on the stage 14 with the pellicle side 150 facing down. A desired processing condition is input from the keyboard 39. Based on the start input, the gate 17 and the gate 18 are opened by the signal output from the gate controller 35. Next, the stage 14 is driven by a signal output from the stage controller 36, and moves from the loader chamber 21 to the processing chamber 23 provided with the pellicle peeling mechanism through the vacuum replacement chamber 22 of the vacuum replacement mechanism. The loader chamber having the loader mechanism is preferably provided with a reversing mechanism for switching the photomask 100 upside down.

  Next, the gate 17 and the gate 18 are closed again by the signal output from the gate controller 36. Next, the frame 2 is held in conjunction with the support pin 12 and the lifting stage 13. Next, the light source 7 is oscillated at a predetermined output and oscillation frequency by the signal output from the light source controller 32. At the same time, in accordance with an instruction from the CPU 37, the stage controller 36 drives the stage 14 so that the light source scans the position of the frame 2. By this laser scanning, the light shielding film 4 in the region immediately above the frame 2 is deteriorated, and the adhesion with the substrate 5 is reduced.

  Next, the elevating stage 13 is lowered, and the pellicle 150 is detached from the photomask 100 together with a part of the light shielding film 4 (and adhesive). Next, the support pin 12 is pulled out from the frame 2. Next, the peeled state of the light shielding film in the scanning unit is observed with the camera 9. The pellicle 150 is loaded by its own weight on the support portion below the pedestal 11. When the peeling is performed normally, the gates 17 and 18 are opened by the signal output from the gate control unit 35. Next, the stage 14 is driven by a signal output from the stage control unit 36, and the pellicle 150 and the photomask 100 are separately supported on the pedestal 11, and the process chamber 23 returns to the vacuum replacement chamber 22 and the loader chamber 21. The loader unit 21 collects the photomask 100 and the pellicle 150, respectively.

  The re-light-shielding process (light-shielding film deposition) of the portion 4a where the light-shielding film has been removed by pellicle peeling according to the present invention will be described with reference to FIGS. The light shielding film deposition apparatus 400 also includes a loader mechanism 21, a vacuum replacement mechanism 22, a light shielding film deposition mechanism 23, and various control mechanisms 24, and has corresponding chambers and control devices.

  First, the photomask 100 from which the pellicle 150 has been removed is placed on the pedestal 11 on the stage 14 so that the light shielding film 4 faces upward using a reversing mechanism. A desired processing condition is input from the keyboard 39. Based on the start input, the gate 17 is opened by a signal output from the gate controller 35. Next, the stage 14 is driven by a signal output from the stage controller 36, and the pedestal 11 moves from the loader chamber 21 to the vacuum replacement chamber 22.

  Next, the gate 17 is closed again by the signal output from the gate controller 36. Next, the vacuum replacement chamber 22 and the processing chamber 23 are depressurized to predetermined pressures by the vacuum pumps 15A and 15B by the signal output from the vacuum controller 34, respectively. The pressure is measured by the pressure gauges 16A and 16B, and is managed by the CPU 37. When the predetermined pressure is reached, the gate 18 is opened by a signal output from the gate control unit 37. Next, the stage 14 is driven by a signal output from the stage control unit 36, and the pedestal 11 moves from the vacuum replacement chamber 22 to the processing chamber 23. Next, the gate 18 is closed again by the signal output from the gate controller 36.

Next, a predetermined gas is supplied from the gas supply unit 8 to the processing chamber by a signal output from the gas control unit 33. Next, the CPU 37 controls the pressure gauge 16B so that the exhaust pressure of the vacuum control unit 34 becomes predetermined so as to become a predetermined processing pressure. When the pressure gauge 16B reaches the specified pressure, the light source 7 is oscillated at a predetermined output and oscillation frequency by a signal output from the light source control unit 32. At the same time, in accordance with an instruction from the CPU 37, the stage controller 36 drives the stage 14 so that the light source scans the position of the frame 2. SiC is formed by the photo-CVD method in the region where the light shielding film 4 is peeled off by this scan.

Next, the film forming unit is observed by the camera 9 in accordance with a signal output from the observation control unit 31. Next, the vacuum pump 15B is operated by a signal output from the vacuum control unit 34 to a predetermined pressure before the film forming process in the vacuum environment of the processing chamber 23, and the pressure gauge 16B reaches a specified value. Next, the gate 18 is opened by a signal output from the gate controller 36. Next, the stage 14 is moved from the processing chamber 23 to the vacuum replacement chamber 22 by the signal output from the stage controller 36, and the gate 18 is closed. Next, the vacuum pump 15A is stopped by a signal output from the vacuum controller 34, and the pressure gauge 16A is allowed to reach atmospheric pressure. Next, the gate 17 is opened by the signal output from the gate control unit 36, and the stage 14 is moved to the original loader unit 21.
Thus, the re-shielding process for the photomask 100 is completed.

If a new pellicle is bonded to this photomask via an adhesive, the reproduction of the pellicle-equipped photomask is completed.
Further, in the present invention, the pellicle peeling apparatus and the light shielding film deposition apparatus used for the re-shielding process are described as separate apparatuses. However, the pellicle collecting mechanism detached from the loader unit 21 and the reversing mechanism for switching the top and bottom of the photomask are provided. If applied, the pellicle can be detached and the light shielding film can be formed in one chamber.

  By carrying out the present invention, it is possible to eliminate any adhesive residue from the circuit pattern region of the photomask. Conventionally, it has been necessary to clean and remove the residue, but the present invention can be made unnecessary.

DESCRIPTION OF SYMBOLS 1 Pellicle film 2 Frame 3 Adhesive 4 Light-shielding film 4a Light-shielding film peeling part 5 Board | substrate 6 Circuit pattern 7 Light source 8 Gas supply part 9 Camera 11 Base 12 Support pin 13 Lifting stage 14 Stage 15 Vacuum pump 16 Pressure gauge 17 Gate 18 Gate 19 Window 21 Loader 22 Vacuum replacement chamber 23 Processing chamber 24 Controller 31 Observation controller 32 Light source controller 33 Gas controller 34 Vacuum controller 35 Gate controller 36 Stage controller 37 CPU
38 Display unit 39 Keyboard 200 Photomask with pellicle 100 Photomask 150 Pellicle stretching frame 300 Pellicle peeling apparatus 400 Light-shielding film deposition apparatus

Claims (11)

A method of peeling a pellicle together with a frame from a photomask with a pellicle in which a frame in which a pellicle is stretched on a photomask having a light-shielding film pattern formed on a quartz substrate is bonded to the light-shielding film via an adhesive,
A method for peeling a pellicle, wherein a laser beam having a wavelength of 200 nm or more is irradiated from a photomask side to a light shielding film on a back surface of a frame to weaken a bond between the quartz substrate and the light shielding film, and then the frame and the photomask are separated.   2. The method for peeling a pellicle according to claim 1, wherein the light shielding film is formed by laminating a metal, a metal oxide film, and a metal oxynitride film in this order.   3. The method of peeling a pellicle according to claim 1, wherein the wavelength of the laser beam is a third harmonic (355 nm) or a fourth harmonic (266 nm) of a YAG laser.   A method for regenerating a photomask from which a pellicle has been removed by the peeling method according to any one of claims 1 to 3, wherein a pellicle is formed after a light shielding film is newly formed at a site where the light shielding film has been peeled off. A method for regenerating a photomask with a pellicle, comprising: adhering a frame in which a film is stretched on a light shielding film through an adhesive. The light shielding film is deposited by photo-CVD by irradiating a third harmonic (355 nm) of a YAG laser to a mixed gas of Si ₂ H ₆ gas, C ₂ H ₂ gas, and H ₂ (hydrogen). A method for regenerating a photomask with a pellicle according to claim 4. The light shielding film is any one of phenanthrene (C ₁₄ H ₁₀ ), chromium carbonyl (Cr (CO) ₆ ), tungsten carbonyl (W (CO) ₆ ), tungsten fluoride (WF ₆ ), and tetraethoxysilane (TEOS). 5. The method for regenerating a photomask with a pellicle according to claim 4, wherein the deposition is performed by irradiating the gas or mixed gas with an electron beam. The light shielding film is deposited by irradiating a focused ion beam to a gas or a mixed gas of phenanthrene (C ₁₄ H ₁₀ ), tungsten carbonyl (W (CO) ₆ ), and tetraethoxysilane (TEOS). The method for regenerating a photomask with a pellicle according to claim 4, wherein: The light shielding film is a hydrocarbon selected from phenanthrene (C ₁₄ H ₁₀ ), benzene (C ₆ H ₆ ), styrene (C ₈ H ₈ ), naphthalene (C ₁₀ H ₈ ), and pyrene (C ₁₆ H ₁₀ ). Gases, tungsten carbonyl (W (CO) ₆ ), tungsten fluoride (WF ₆ ), chromium carbonyl (Cr (CO) ₆ ), cobalt carbonyl (Co ₂ (CO) ₈ ), iron carbonyl (Fe (CO) ₅ ), a metal-containing gas selected from Trimethyl (methylcyclopentadienyl) platinum (MeCpPt (Me) ₃ ), any of silicon-containing gases selected from tetraethoxysilane (TEOS) and 1,3,5,7-tetramethylcyclotetra-Siloxane Crab focused ion beam The method of reproducing pellicle photomask of claim 4, wherein the depositing shines. A loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A pellicle peeling mechanism including a camera and a laser light source;
And a device control mechanism. A loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A light-shielding film deposition mechanism comprising a camera, a laser light source, and a gas supply unit;
A light-shielding film deposition apparatus comprising: a device control mechanism; A loader mechanism for mounting a photomask with a pellicle on a stage with a pedestal;
A vacuum replacement mechanism for reducing the pressure of the photomask environment;
A pellicle peeling mechanism including a camera and a laser light source;
A pellicle peeling apparatus comprising: the light-shielding film deposition mechanism according to claim 10.

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