JP2016058564A - Proximity effect correction method, and proximity effect correction program and proximity effect correction device using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a proximity effect correction method for reducing the calculation load with high accuracy in charged particle lithography, and to provide a proximity effect correction program and a proximity effect correction device using the same.SOLUTION: A proximity effect correction method splits a drawing area into partitions of the extent of backscatter, creates a split area map for further splitting the partition locally into small partitions, based on the information of a pattern, when a very small part is included in the pattern size or the distance between patterns, creates an area density map for each partition, based on the information of a pattern and the information of the split area map, and then creates a proximity effect correction irradiation amount map based on the information of the area density map, and the information of the backscatter correction factor for each partition. A proximity effect correction program and a proximity effect correction device using the same are also provided.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a dose correction for a proximity effect in charged particle lithography, and relates to a proximity effect correction method that enables high correction accuracy, and a proximity effect correction program and a proximity effect correction apparatus using the proximity effect correction method.

  In semiconductors, semiconductor photomasks, nanoimprint molds, optical-related elements, biochips, and the like, high-resolution and high-accuracy pattern production is required, so that a lithography method using charged particles is used. In recent years, higher resolution has been demanded with the progress of miniaturization.

  In charged particle lithography, when charged particles are incident on a resist film formed on the substrate, the charged particles scatter (forward scatter) while repeatedly colliding with the resist constituent atoms, and when they reach the substrate, reflected particles from the substrate enter the resist. It is known to re-enter and scatter (backscatter). By this backscattering, for example, when a plurality of adjacent figures are drawn, the apparent irradiation amount increases. In addition, since the influence of backscattering extends to several tens of μm, even if the irradiation amount is the same, the apparent irradiation amount differs between a dense pattern and an isolated pattern. As a result, there is a difference between the actual pattern produced and the design dimension. The above phenomenon is referred to as a proximity effect, and in order to produce a highly accurate pattern, it is necessary to draw with a dose with the proximity effect corrected.

σ_ｆは前方散乱、σ_ｂは後方散乱によるエネルギーの広がり（前方散乱径、後方散乱径）を表す。ηは前方散乱により蓄積されるエネルギーに対する後方散乱により蓄積されるエネルギーの比であり、後方散乱補正係数と呼ばれる。（数式２）の右辺第１項は前方散乱を表し、第２項目は後方散乱を、それぞれガウス関数で表しており、近接効果において主たる影響を及ぼすのは第２項目の後方散乱である。 The influence due to the proximity effect can be expressed by an energy distribution accumulated in the resist by irradiation. In general, the energy distribution E (x) accumulated by the particle beam incident on one point on the resist is called an EID (Exposure Intensity Distribution) function, and is obtained by adding a Gaussian function as shown in (Expression 2). Approximated.

σ _f represents forward scattering, and σ _b represents energy spread (forward scattering diameter, back scattering diameter) by back scattering. η is a ratio of energy accumulated by backscattering to energy accumulated by forward scattering, and is called a backscattering correction coefficient. The first term on the right side of (Expression 2) represents forward scattering, the second item represents backscattering by a Gaussian function, and the main effect in the proximity effect is backscattering of the second item.

  In the basic proximity effect correction method, the backscattering term of (Equation 2) is used, the influential backscattering intensity is integrated from the position and area of each figure located in the periphery of the figure of interest, and the figure of interest The irradiation amount of the charged particle beam is corrected so that the energy value with respect to becomes an energy threshold value for resolving the pattern.

  Since the above method must calculate the mutual relationship between the patterns, the amount of calculation becomes enormous and becomes difficult to apply if the number of drawn figures increases as the miniaturization progresses.

  Thus, in order to perform proximity effect correction with a reduced amount of calculation, an area density method is known in which a corrected dose is calculated using a drawing area density (hereinafter abbreviated as area density as appropriate) map. This method uses the fact that the influence intensity of backscattering is almost constant in the range of several tens of μm, calculates the area density of the drawing pattern in an arbitrary section, and draws with a uniform exposure amount in the section. As a result, proximity effect correction is performed. Since it is not necessary to calculate the correlation of each figure, the calculation amount of proximity effect correction is greatly reduced.

Ｄは補正照射量、αは面積密度、ηは後方散乱補正係数で、ｄ_０は、レジスト材料や基板の材料、構造に依存して任意に設定できる基準照射量であり、（数式３）の場合、例えば面積密度５０％の照射を行うときに、Ｄが解像閾値と同等になるようにｄ_０を設定する。 That is, the proximity effect correction irradiation dose in the section is given by, for example, (Equation 3), assuming that the influence intensity due to backscattering is constant in the section.

D is a corrected dose, α is an area density, η is a backscattering correction coefficient, and d ₀ is a reference dose that can be arbitrarily set depending on the resist material, substrate material, and structure. In this case, for example, when performing irradiation with an area density of 50%, d ₀ is set so that D becomes equal to the resolution threshold.

  In the above method, even if a repeated pattern with the same dimensions and the same interval is located at the change of a section, only a different dose is applied depending on the area density smoothed by the adjacent section by the same size section. Therefore, there will be a shift in the dimensions after resolution.

  In recent years, since substrates made of various materials are used, the EID function cannot be sufficiently approximated by two Gaussian functions as shown in (Formula 2). For example, when a heavy metal film such as Ta is used on the substrate as shown in FIG. 2, the number of particles that re-enter the resist due to elastic scattering increases, so that the back scattering from the Ta layer has high energy in a narrow range. Such a case cannot be handled by an area density map of a section of several tens of μm.

  As a method for correcting the proximity effect of the above-mentioned various materials, the backscattering diameter of each Gaussian function is approximated by approximating the energy distribution function with multiple Gaussian functions, assuming that backscattering occurs in different intensities and ranges from each layer constituting the substrate. And a method of performing proximity effect correction using a backscatter correction coefficient. (See Patent Document 1)

  Also, a method for correcting the backscattering intensity affecting the narrow range described above by setting the proximity effect correction section smaller than several tens of μm and finely determining the proximity effect correction dose is disclosed. . (See Patent Document 2)

Japanese Patent No. 3725841 Japanese Patent No. 4551243

  In the method of Patent Document 1 described above, since a plurality of Gauss functions are applied, a high effect can be expected. However, since it is necessary to set the sections in all regions in detail and calculate the respective correlations, it is enormous. A calculation amount is required.

  Further, in the method of Patent Document 2 described above, since the divided region is locally narrowed according to the pattern width and distance, the amount of calculation is suppressed, but a specific backscattering correction method using the embodiment Is not specified.

  The present invention solves the above-mentioned problems, and can perform proximity effect correction of the dose regardless of the structure of the substrate and the voltage of the charged particle beam, and also uses the area density map to reduce the correction calculation load. It is an object of the present invention to provide a proximity effect correction method, a proximity effect correction program and a proximity effect correction apparatus using the method, which can be reduced.

In order to solve the above problems, the present invention according to claim 1 is a proximity effect correction method in a charged particle lithography technique for drawing a pattern on a resist film formed on a substrate,
When the drawing area is divided into sections of about the radius (several tens of μm) where backscattering is performed, and based on the information of the pattern, when the pattern dimension or the distance between adjacent patterns includes a minute part, the section Is divided into smaller sections locally, and based on the information on the pattern and the divided area map, an area density map is created for each section, and the area density map information and The proximity effect correction method is characterized in that a proximity effect correction dose map is created based on information about the backscattering correction coefficient for each section.

であることを特徴とする請求項１に記載の近接効果補正方法としたものである。 In order to solve the above-described problem, the present invention according to claim 2 is the proximity effect correction method according to the present invention, wherein j = 1, 2,..., Kmmax, and a backscatter correction coefficient for each partition is η _j , Similarly, when the area density is α _j and the reference irradiation dose that can be arbitrarily set depending on the resist material and the substrate material and structure is d ₀ , a mathematical formula for _{obtaining the} proximity effect complementary irradiation dose D _j in the section j. Is

The proximity effect correction method according to claim 1, wherein

  In order to solve the above-mentioned problem, the present invention according to claim 3 is a proximity effect correction program in a charged particle lithography technique for drawing a pattern on a resist film formed on a substrate, comprising: The procedure for receiving and storing information on the backscattering correction coefficient, the drawing area is divided into sections of about the radius (several tens of μm) that the backscattering reaches, and the pattern dimension or the distance between adjacent patterns based on the pattern information Each subdivision based on the procedure for creating a subdivision map that further divides the subdivision into smaller subdivisions and information on the pattern and the subdivision map. Proximity effect correction irradiation based on the procedure of creating the area density map of the area and the information of the area density map and the backscattering correction coefficient for each section A step of creating a map, in which the proximity effect correction dose map and the proximity effect correction program, characterized in that to execute a step of outputting together with the information of the pattern, to the computer.

であることを特徴とする請求項３に記載の近接効果補正用プログラムとしたものである。 In order to solve the above-described problem, the present invention according to claim 4 is the proximity effect correction program, wherein j = 1, 2,..., Kmax and the backscattering correction coefficient for each partition is η _j. Similarly, when the area density is α _j and the reference irradiation dose that can be arbitrarily set depending on the resist material and the substrate material and structure is d ₀ , the proximity effect supplementary irradiation dose D _j in the section _j is obtained. The formula of

4. The proximity effect correction program according to claim 3, wherein the program is a proximity effect correction program.

  In order to solve the above-mentioned problem, the present invention according to claim 5 is a proximity effect correction apparatus in a charged particle lithography technique for drawing a pattern on a resist film formed on a substrate, wherein the pattern information and the back An input unit and a storage unit that receive and store information on the scattering correction coefficient, and a drawing region is divided into sections of about a radius (several tens of μm) where backscattering is performed, and based on the pattern information, pattern dimensions or adjacent patterns Based on the information of the pattern information and the divided area map, and an acquisition unit that acquires a divided area map that divides the section into smaller sections locally. The proximity effect based on the acquisition unit for acquiring the area density map for each section, and the information of the area density map and the backscattering correction coefficient for each section. An acquisition unit that acquires a positive dose map, in which the proximity effect correction dose map and the proximity effect correction apparatus characterized by comprising an output section for output together with information of the pattern.

であることを特徴とする請求項５に記載の近接効果補正装置としたものである。 In order to solve the above-described problem, the present invention according to claim 6 is the proximity effect correction apparatus, wherein j = 1, 2,..., Kmmax, and a backscatter correction coefficient for each partition is η _j , Similarly, when the area density is α _j and the reference irradiation dose that can be arbitrarily set depending on the resist material and the substrate material and structure is d ₀ , a mathematical formula for _{obtaining the} proximity effect complementary irradiation dose D _j in the section j. Is

The proximity effect correcting device according to claim 5, wherein

  According to the present invention, the drawing area is locally divided into fine sections, and the proximity effect correction dose corresponding to the drawing area density of each section is obtained by (Equation 1) and smoothed, thereby obtaining the structure of the substrate. Regardless of the voltage of the charged particle beam or the charged particle beam, the influence of the proximity effect can be suppressed and the pattern accuracy can be improved.

The block diagram which shows an example of a structure of the proximity effect correction apparatus of this invention. The cross-sectional schematic diagram showing the structure of the resist in the Example of this invention, a metal film, and a board | substrate. The figure showing the approximate fit (plot line) by the stored energy distribution (EID function, solid line) in a resist and the Gaussian function in the Example of this invention. The figure showing the backscattering diameter (sigma) _k and backscattering correction coefficient (eta) _k for every division | segmentation level in the Example of this invention. The figure showing the drawing pattern in the Example of this invention. The figure which expanded a part of drawing pattern of FIG. 5 in the Example of this invention. The figure showing the map which divided | segmented the drawing pattern of FIG. 5 into the division in the Example of this invention. The figure showing the drawing area density for every division | segmentation level of the drawing pattern of FIG. 5 in the Example of this invention. The figure which compared the proximity effect correction | amendment dose of the drawing pattern of FIG. 5 with the proximity effect correction dose by the conventional method in the Example of this invention.

   Hereinafter, a proximity effect correction apparatus according to an embodiment of the present invention will be described with reference to FIG. 1 (a proximity effect correction method of the present invention and a proximity effect correction program using the same will be described in this description). FIG. 1 is a schematic block diagram showing a configuration of a proximity effect correction apparatus 100 according to an embodiment of the present invention. As shown in FIG. 1, the proximity effect correction apparatus 100 includes an input unit 101, a storage unit 102, a divided region map acquisition unit 103, an area density map acquisition unit 104, a corrected dose map acquisition unit 105, and an output. Part 106 is provided.

  The proximity effect correction apparatus 100 is composed of a computer system, and in charged particle lithography for drawing a pattern on a resist film formed on a substrate, the backscattering intensity of each section obtained by finely dividing a drawing region locally. A proximity effect correction program for calculating an optimum proximity effect correction dose from the above and enabling highly accurate pattern production is provided. Note that the proximity effect correction apparatus 100 may be configured only by hardware such as a dedicated LSI.

The input unit 101 receives input of information used by the proximity effect correction apparatus 100 and transfers it to the storage unit 102. In addition to the information on the pattern to be drawn, information on the backscatter correction coefficient η _k is input to the input unit 101. The method for obtaining η _k will be specifically described in the embodiments. The input unit 101 includes a transmission / reception interface for receiving transmission data from the outside of the proximity effect correction apparatus 100, an input interface for inputting data from an external storage device, a man-machine interface using a display, a keyboard, a mouse, a tablet, and the like The input device can be used.

The storage unit 102 stores information input from the input unit 101. The storage unit 102, a drawing pattern which is transferred from the input unit 101, and stores the information of the backscattered correction coefficient eta _k. The storage unit 102 can be configured using a storage medium such as a RAM, a flash memory storage device, a magnetic disk storage device, and an optical disk storage device.

  In the divided area map acquisition unit 103, first, the drawing area is divided into sections that are slightly smaller than the range in which the backscattering extends. The division level at this time is k = 1. Next, based on the drawing pattern information stored in the storage unit 102, the dimension of the pattern included in each section and the distance between the sides between adjacent patterns are acquired from the pattern position. If the acquired pattern size or the above distance is smaller than the partition size, the partition is further divided. The division level at this time is k = 2. This process is repeated to create a divided region map that is finely divided in a region including a micro pattern or a design having a short distance between the sides. The smaller the division level k, the smaller the division, and the division level of the smallest division is k = kmax. The created divided area map is transferred to the area density map acquisition unit 104.

  The area density map acquisition unit 104 acquires the area density of each section of the divided region map acquired from the divided region map acquisition unit 103 based on the drawing pattern information stored in the storage unit 102. At this time, the area density in all the levels from the division level k to 1 to kmax is acquired. The acquired area density map is transferred to the correction dose map acquisition unit 105.

Ｄ_１は分割レベルｋ＝１における補正後の照射量、α_１は分割レベルｋ＝１における面積密度、η_ｋは後方散乱補正係数、ｄ_０は基準照射量である。 Based on the backscatter correction coefficient η _k stored in the storage unit 102 and the area density map information acquired from the area density map acquisition unit 104, the corrected dose map acquisition unit 105 first obtains a division level k = The proximity effect correction dose for one section is acquired. At this time, the proximity effect correction dose is acquired according to (Equation 4).

D ₁ is a dose after correction at the division level k = 1, α ₁ is an area density at the division level k = 1, η _k is a backscatter correction coefficient, and d ₀ is a reference dose.

Ｄ_２は分割レベルｋ＝２における補正後の照射量、α_２は分割レベルｋ＝２における面積密度を表す。これを、分割レベルがｋｍａｘになるまで繰り返す。 Next, the correction dose map acquisition unit 105 acquires the proximity effect correction dose at the division level k = 2 based on the information of the backscatter correction coefficient η _k and the area density map. The proximity effect correction dose at this time is obtained according to (Equation 5).

D ₂ represents the irradiation dose after correction at the division level k = 2, and α ₂ represents the area density at the division level k = 2. This is repeated until the division level reaches kmax.

  The corrected dose map acquisition unit 105 acquires proximity effect corrected doses for all divided sections, and creates a map of corrected doses. The corrected dose map is transferred to the output unit 106.

  The output unit 106 outputs the corrected dose map acquired from the corrected dose map acquisition unit 105 together with the drawing pattern information. The output unit 106 can be configured using an output device such as an output interface connected to an external computer, a memory, or the like.

  By performing charged particle lithography using the proximity effect correction dose output from the output unit 106, a desired resist pattern shape can be produced.

The operation process of the proximity effect correction apparatus 100 described above is stored in a computer-readable recording medium in the form of a program, and the above-described processing is performed by the computer system reading and executing this program. The “computer system” herein includes a CPU, various memories, an OS, and hardware such as peripheral devices. Further, the “computer system” includes a homepage providing environment (or display environment) if a WWW (Internet) environment system is used.

In addition, although the form which inputs the information of backscattering correction coefficient (eta) _k with the pattern to draw in the input part 101 of the proximity effect correction apparatus was demonstrated in FIG. 1, as another form of the proximity effect correction apparatus of this invention, Can be configured to incorporate the function for obtaining η _k using a simulation into the proximity effect correction apparatus by the method described in the embodiment.

  Hereinafter, according to the embodiment, the proximity effect correcting apparatus of the present invention will be described in more detail.

First, a drawing pattern and a backscatter correction coefficient η _{k obtained} as follows are input to the input unit 101. In the present embodiment, the backscatter correction coefficient η _k is obtained using simulation, but the present invention is not limited to this. For example, the charged particle lithography may be actually performed to form a resist pattern, and the backscattering diameter and the backscattering correction coefficient may be determined in advance from the result.

  Assume that an electron beam having a voltage of 50 eV is incident on one point of a positive resist (150 nm thickness) applied on a substrate with a metal film (here, Ta film, 100 nm thickness) as shown in FIG. At this time, when the energy distribution function (EID function) accumulated in the resist is calculated by commercially available general dedicated software, a solid line in FIG. 3 is obtained.

ｘは入射点からの距離、Ｅは蓄積エネルギー値、σ_ｆは前方散乱径、σ_ｋは分割レベルｋにおける後方散乱径を表す。このときの後方散乱径σ_ｋは、ｋ＝１以外のｋ＝２〜ｋｍａｘでは、分割する区画のスケールに合わせて設定する。例えば、区画を１μｍにする場合、その値を半値全幅もしくは半値半幅としてσ_ｋを設定する。本実施例では、図４に示すように、分割レベルｋに対してσ_ｋの値を設定した。尚、前方散乱径σ_ｆは、近接効果への影響は小さいため、ｋ＝１のときに設定した値で一定として差し支えない。 On the other hand, the EID function at this time is approximated (fitted) with a plurality of Gaussian functions such as (Equation 6).

x is the distance from the incident point, E is the stored energy value, σ _f is the forward scattering diameter, and σ _k is the back scattering diameter at the division level k. The backscattering diameter σ _{k at} this time is set in accordance with the scale of the section to be divided when k = 2 to kmax other than k = 1. For example, when the partition is 1 μm, σ _k is set with the full width at half maximum or the half width at half maximum. In this embodiment, as shown in FIG. 4, the value of σ _k is set for the division level k. Note that the forward scattering diameter σ _f has a small influence on the proximity effect, and therefore may be a constant value set when k = 1.

When σ _{f and} σ _k set as described above and the division level kmax and the backscattering correction coefficient η _k so that the calculation result by (Equation 6) is close to the solid line in FIG. When the value of η _k is as shown in FIG. 4, it is found that the EID function of the solid line in FIG. In the plot line, a drop in the vicinity of x = 0.01 μm is a phenomenon peculiar when the EID function is approximated by a Gaussian function, and can be judged by suitability other than near x = 0.01 μm. It is enough.

  On the other hand, a drawing pattern input to the input unit 101 is shown in FIG. In FIG. 5, there are two undrawn lines with a line width of 100 nm in a large drawing area of several tens of μm. FIG. 6 is an enlarged view of the vicinity of the center of FIG.

The backscatter correction coefficient η _k obtained as described above and the drawing pattern information are input to the input unit 101 and transferred to the storage unit 102.

Next, the divided region map acquisition unit 103 creates a divided region map based on the drawing pattern information acquired from the storage unit 102. When the drawing pattern is FIG. 5, a high division level is required in the periphery of a line not drawn with a line width of 100 nm, and FIG. 7 is created as a divided region map. The acquired divided region map is transferred to the area density map acquisition unit 104.

  The area density map acquisition unit 104 acquires the area density of each region based on the drawing pattern acquired from the storage unit 102 and the information acquired from the divided region map acquisition unit 103. When the drawing area density was obtained for each division level for the drawing pattern shown in FIG. 5, FIG. 8 was obtained. In FIG. 8, the center coordinates of the pattern of FIG.

  From FIG. 8, it can be seen that the area density is low in the section including the minute pattern that is not drawn. It can also be seen that when the division level is high, the area density is further reduced because the proportion of the minute pattern in the section is increased, and the fidelity of reflecting the minute pattern that is not drawn in the area density is improved. In FIG. 8, the area density map is smoothed. The acquired area density map is transferred to the correction dose map acquisition unit 105.

The correction dose map acquisition unit 105 acquires the proximity effect correction dose from the backscatter correction coefficient η _k acquired from the storage unit 102 and the area density map information acquired from the area density map acquisition unit 104. . When the area density α _k obtained from the area density map shown in FIG. 8 and the backscattering correction coefficient η _k shown in FIG. 4 are substituted into (Equation 1), FIG. 9 is obtained as the proximity effect correction dose. As described above, d ₀ is the reference dose, but in FIG. 9, d ₀ = 1 is set in order to show a comparison with the case where correction is performed using the conventional (Formula 3). From FIG. 9, the corrected irradiation dose increases toward the pattern center (x = 0) region where there is a fine pattern not to be drawn, and the phenomenon in which the dose is insufficient in the region close to the fine pattern compared to the central region of the large drawing area. It can be seen that it can be corrected. The corrected dose map thus obtained is transferred to the output unit 107 together with the drawing pattern information.

Based on the proximity effect correction dose map output from the output unit 107, the dose for each figure section is determined, and electron beam lithography is performed. The irradiation dose of each section is compared with the position of the center of gravity of the figure and the corrected irradiation dose map of FIG. 9, and the corrected irradiation dose at the corresponding position is applied. As described so far, the proximity effect correction dose depends on the set values of the division level k and the backscattering diameter σ _k . For simplicity, in this embodiment, with respect to k and sigma _k 1 degree setting has been determined proximity effect dose correction amount to calculate the area density map and backscatter correction coefficient eta _k, normally k and sigma _k Even if the set value is changed, the proximity effect correction dose is determined by performing iterative calculation until the final change in the proximity effect correction dose becomes sufficiently small.

  As described above, the drawing area is divided into sections whose sizes are locally changed, and the proximity effect correction dose corresponding to the drawing area density of each section is obtained using (Equation 1). However, the influence of the proximity effect can be suppressed and the pattern accuracy can be improved.

  The present invention is applied to proximity effect correction for accurately producing a fine pattern using charged particle lithography, for example, in the production of semiconductors, semiconductor photomasks, nanoimprint molds, optical-related elements, biochips, and the like. Can do.

DESCRIPTION OF SYMBOLS 1 Resist 2 Substrate 2a Metal film 3 Drawing area 4 Enlarged area 100 in FIG. 6 Proximity effect correction device 101 Input unit 102 Storage unit 103 Division area map acquisition unit 104 Area density map acquisition unit 105 Correction dose map acquisition unit 106 proximity of the proximity effect correction dose D _j division level k = j in the output section E (x) near the accumulated energy value D proximity corrected dose D ₁ division level k = 1 effect-corrected dose D ₂ division level k = 2 Effect correction dose d ₀ Reference dose k Division level kmax Maximum division level σ _f Forward scattering diameter σ _b Back scattering diameter σ _k Division level k back scattering diameter η Back scattering correction coefficient η _k Division level k back scattering correction coefficient α Drawing area density α Drawing area density of _k division level k

Claims (6)

  A proximity effect correction method in a charged particle lithography technique for drawing a pattern on a resist film formed on a substrate, wherein the drawing area is divided into sections of about a radius (several tens of μm) where backscattering is performed, and information on the pattern is obtained When the pattern dimension or the distance between adjacent patterns includes a minute part, a divided area map is created to further divide the section into smaller sections, and the pattern information and the partition An area density map for each section is created based on the information with the area map, and a proximity effect correction dose map is created based on the information on the area density map and the backscatter correction coefficient for each section. Proximity effect correction method characterized by the above. In the proximity effect correction method, the sections j = 1, 2,..., Kmax, the backscattering correction coefficient for each section is η _j , the area density is α _j , and the resist material, the substrate material, and the structure are dependent on each other. When the reference dose that can be arbitrarily set is set to d ₀ , the formula for _{obtaining the} proximity effect supplement dose D _j in the section j is:

The proximity effect correction method according to claim 1, wherein:   A proximity effect correction program in charged particle lithography technology that draws a pattern on a resist film formed on a substrate, the procedure for receiving and storing the pattern information and backscatter correction coefficient information, and the backscattering of the drawing area Is divided into sections having a radius of about several tens of μm, and if the pattern dimension or the distance between adjacent patterns includes a minute portion based on the pattern information, the section is further localized A procedure for creating a divided area map to be divided into small sections, a procedure for creating an area density map for each section based on information on the pattern information and the divided area map, information on the area density map, and the information Based on the information on the backscatter correction coefficient for each section, a procedure for creating a proximity effect correction dose map, and the proximity effect correction dose map A proximity effect correction program, characterized in that to execute a step of outputting together with the information of the pattern, to the computer. In the proximity effect correction program, the section is j = 1, 2,..., Kmax, the backscatter correction coefficient for each section is η _j , the area density is also α _j , and depends on the resist material, substrate material, and structure When the reference dose that can be arbitrarily set is d ₀ , the mathematical formula for obtaining the proximity effect supplement dose D _j in the section j is:

The proximity effect correction program according to claim 3, wherein the program is a proximity effect correction program.   A proximity effect correction device in a charged particle lithography technique for drawing a pattern on a resist film formed on a substrate, wherein the input unit and the storage unit receive and store the pattern information and backscatter correction coefficient information, and the drawing region Is divided into sections of about the radius (several tens of μm) that the backscattering reaches, and based on the information of the pattern, if the pattern dimension or the distance between adjacent patterns includes a minute part, the section is further An acquisition unit that acquires a divided area map that is locally divided into small sections, an acquisition section that acquires an area density map for each section based on information on the pattern and the divided area map, and the area density An acquisition unit that acquires a proximity effect correction dose map based on map information and backscatter correction coefficient information for each section, and the proximity effect correction Proximity correction device characterized by comprising an output section for outputting the injection amount map with information of the pattern. In the proximity effect correction apparatus, j = 1, 2,..., Kmmax for the section, η _j for the backscattering correction coefficient for each section, α _{j for} the area density, and the resist material, the substrate material, and the structure. When the reference dose that can be arbitrarily set is set to d ₀ , the formula for _{obtaining the} proximity effect supplement dose D _j in the section j is:

The proximity effect correction device according to claim 5, wherein

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