JP2016046370A5 - - Google Patents
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- JP2016046370A5 JP2016046370A5 JP2014169303A JP2014169303A JP2016046370A5 JP 2016046370 A5 JP2016046370 A5 JP 2016046370A5 JP 2014169303 A JP2014169303 A JP 2014169303A JP 2014169303 A JP2014169303 A JP 2014169303A JP 2016046370 A5 JP2016046370 A5 JP 2016046370A5
- Authority
- JP
- Japan
- Prior art keywords
- film
- phase shift
- mask
- pattern
- reflective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005530 etching Methods 0.000 claims description 101
- 239000007789 gas Substances 0.000 claims description 66
- 239000011651 chromium Substances 0.000 claims description 54
- 239000000463 material Substances 0.000 claims description 53
- 230000001681 protective Effects 0.000 claims description 47
- 238000004519 manufacturing process Methods 0.000 claims description 46
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 42
- 229910052715 tantalum Inorganic materials 0.000 claims description 42
- 229910052804 chromium Inorganic materials 0.000 claims description 40
- VYZAMTAEIAYCRO-UHFFFAOYSA-N chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 39
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 38
- 229910052760 oxygen Inorganic materials 0.000 claims description 35
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000001301 oxygen Substances 0.000 claims description 32
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 32
- 229910052757 nitrogen Inorganic materials 0.000 claims description 31
- 238000001312 dry etching Methods 0.000 claims description 26
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- KZBUYRJDOAKODT-UHFFFAOYSA-N chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 6
- 239000005092 Ruthenium Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 description 505
- 239000010410 layer Substances 0.000 description 226
- 229910004166 TaN Inorganic materials 0.000 description 47
- 235000020127 ayran Nutrition 0.000 description 47
- 238000001900 extreme ultraviolet lithography Methods 0.000 description 35
- 230000000694 effects Effects 0.000 description 32
- 238000004140 cleaning Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 24
- 239000000460 chlorine Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005755 formation reaction Methods 0.000 description 14
- 230000002829 reduced Effects 0.000 description 14
- 230000001603 reducing Effects 0.000 description 14
- 230000003287 optical Effects 0.000 description 13
- 229910004535 TaBN Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 229910001936 tantalum oxide Inorganic materials 0.000 description 10
- 239000002356 single layer Substances 0.000 description 9
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000002310 reflectometry Methods 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000000875 corresponding Effects 0.000 description 6
- 238000001659 ion-beam spectroscopy Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000005546 reactive sputtering Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 230000002378 acidificating Effects 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000004380 ashing Methods 0.000 description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 230000003746 surface roughness Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 230000000737 periodic Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000002633 protecting Effects 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 150000003482 tantalum compounds Chemical class 0.000 description 3
- 229910019912 CrN Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910000929 Ru alloy Inorganic materials 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000003078 antioxidant Effects 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 235000010357 aspartame Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 150000001845 chromium compounds Chemical class 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- TUJKJAMUKRIRHC-UHFFFAOYSA-N hydroxyl radical Chemical compound [OH] TUJKJAMUKRIRHC-UHFFFAOYSA-N 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N Bis(trimethylsilyl)amine Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 125000006414 CCl Chemical group ClC* 0.000 description 1
- -1 Cl 2 Chemical compound 0.000 description 1
- 210000002381 Plasma Anatomy 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N Rhenium Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910020160 SiON Inorganic materials 0.000 description 1
- 229910004531 TaB Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive Effects 0.000 description 1
- LKYXEULZVGJVTG-UHFFFAOYSA-N chloromethane Chemical compound Cl[CH] LKYXEULZVGJVTG-UHFFFAOYSA-N 0.000 description 1
- 150000001844 chromium Chemical class 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052803 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014169303A JP6440996B2 (ja) | 2014-08-22 | 2014-08-22 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014169303A JP6440996B2 (ja) | 2014-08-22 | 2014-08-22 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016046370A JP2016046370A (ja) | 2016-04-04 |
| JP2016046370A5 true JP2016046370A5 (zh) | 2017-07-20 |
| JP6440996B2 JP6440996B2 (ja) | 2018-12-19 |
Family
ID=55636672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014169303A Active JP6440996B2 (ja) | 2014-08-22 | 2014-08-22 | 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6440996B2 (zh) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102631779B1 (ko) * | 2016-10-21 | 2024-02-01 | 호야 가부시키가이샤 | 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 및 반도체 장치의 제조 방법 |
| JP6861095B2 (ja) * | 2017-03-03 | 2021-04-21 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及び半導体装置の製造方法 |
| KR102617017B1 (ko) | 2017-08-10 | 2023-12-26 | 에이지씨 가부시키가이샤 | 반사형 마스크 블랭크 및 반사형 마스크 |
| JP6557381B1 (ja) * | 2018-05-08 | 2019-08-07 | エスアンドエス テック カンパニー リミテッド | 位相反転ブランクマスク及びフォトマスク |
| JP7250511B2 (ja) * | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5009649B2 (ja) * | 2007-02-28 | 2012-08-22 | Ｈｏｙａ株式会社 | マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法 |
| JP4602430B2 (ja) * | 2008-03-03 | 2010-12-22 | 株式会社東芝 | 反射型マスク及びその作製方法 |
| WO2010074125A1 (ja) * | 2008-12-26 | 2010-07-01 | Hoya株式会社 | 反射型マスクブランク及び反射型マスクの製造方法 |
| JP2011187746A (ja) * | 2010-03-09 | 2011-09-22 | Dainippon Printing Co Ltd | 反射型マスクブランクス、反射型マスク、およびその製造方法 |
| JP5559948B2 (ja) * | 2010-03-12 | 2014-07-23 | Ｈｏｙａ株式会社 | 多層反射膜付基板の製造方法および反射型マスクブランクの製造方法 |
-
2014
- 2014-08-22 JP JP2014169303A patent/JP6440996B2/ja active Active
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