JP2016040497A - Infrared ray processing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To at least monitor or control a condition of a processed object with higher accuracy.SOLUTION: In an infrared ray processing device 10, radiation intensity sensors 60 detect a coating film radiation intensity Ec as radiation intensity of infrared ray from a coating film 82 (detection part 83) in a processing space 12a. A controller 90 monitors and controls a condition of the coating film 82 under infrared ray processing on the basis of the detected coating film radiation intensity Ec. The infrared ray processing device 10 includes a plurality of radiation intensity sensors 60 having different detection parts 83 on the coating film 82, and the controller 90 monitors and controls the condition of the coating film 82 on the basis of the coating film radiation intensity Ec of the plurality of detection parts 83. The controller 90 controls the infrared ray heater 30 corresponding to the detection part 83 so that a ratio R based on the coating film radiation intensity Ec of the detection part 83 reaches a target value Rt, with respect to each of the plurality of detection parts 83.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an infrared processing apparatus.

  2. Description of the Related Art Conventionally, an infrared processing apparatus that performs processing such as drying by radiating infrared rays from an infrared heater to a processing target such as a coating film is known. As an infrared heater used in such an infrared processing apparatus, for example, Patent Document 1 discloses a rod-shaped heating element that emits infrared rays when heated, and a cylindrical shape made of translucent alumina ceramic in which the heating element is hermetically accommodated. An infrared heater with a protective tube is described.

JP 2006-294337 A

  In such an infrared processing apparatus, in order to maintain the quality of the processing target, the power supplied to the infrared heater is appropriately controlled. In order to control the infrared heater more appropriately, it is conceivable to detect the state (temperature, etc.) of the infrared heater during the infrared processing. However, even if the state of the infrared heater is the same, the state of the processing target may differ depending on the state of the furnace body, for example. As a result, there may be a problem in the quality of the processing target.

  The present invention has been made to solve such a problem, and has as its main object to perform at least one of monitoring or control of a state of a processing target with higher accuracy.

  The present invention employs the following means in order to achieve the main object described above.

The infrared processing apparatus of the present invention is
An infrared processing apparatus that performs infrared processing by emitting infrared rays to a processing target,
A furnace body forming a treatment space for performing the infrared treatment;
One or more infrared heaters disposed in the processing space;
One or more processing target radiation intensity sensors capable of detecting a processing target radiation intensity that is an infrared radiation intensity from the processing target in the processing space;
Monitoring control means for performing at least one of monitoring and control of the state of the processing target during the infrared processing based on the detected processing target radiation intensity;
It is equipped with.

  In the infrared processing apparatus of the present invention, the processing target radiation intensity sensor detects the processing target radiation intensity which is the infrared radiation intensity from the processing target in the processing space. Then, based on the detected processing target radiation intensity, at least one of monitoring and control of the processing target state during the infrared processing is performed. As described above, since the state of the processing target can be directly detected by detecting the processing target radiation intensity, at least one of monitoring and control of the state of the processing target is more compared to the case of detecting the state of the infrared heater. It can be performed with high accuracy. Here, the “state of the processing target” includes the size and thickness of the processing target, the degree of reaction or change due to infrared processing, the mass or ratio of a predetermined material in the processing target, the temperature of the processing target, and the like. . Further, “monitoring of the state of the processing target” includes storing information indicating the state of the processing target, determining whether the state of the processing target is within an allowable range, and the like. “Control of the state of the processing target” includes controlling the state of the processing target by controlling the infrared heater. “At least one of monitoring and control” may be expressed as “monitoring control”. The “infrared treatment” includes, for example, heat treatment, drying treatment, dehydration treatment, chemical reaction treatment, and the like.

  The infrared processing apparatus of the present invention comprises a plurality of processing target radiation intensity sensors having different detection locations in the processing target, and the monitoring control means is based on the processing target radiation strengths of the plurality of detection locations. Further, at least one of monitoring and control of the state of the processing target may be performed. In this way, since the processing target radiation intensity is detected at a plurality of locations on the processing target, it is possible to more accurately monitor and control the state of the processing target.

  The infrared processing apparatus of the present invention comprises a sensor moving means for moving the radiation intensity sensor for processing object, and the monitoring control means moves the radiation intensity sensor for processing object by the sensor moving means to perform the processing. The processing target radiation intensity at a plurality of detection locations in the target may be detected, and at least one of monitoring and control of the state of the processing target may be performed based on the detected plurality of processing target radiation intensities. In this way, the processing target radiation intensity sensor is moved and the processing target radiation intensity is detected at a plurality of locations of the processing target, so that the monitoring control of the processing target state can be performed with higher accuracy. Here, “movement” includes parallel movement along a predetermined path such as a straight line or a curve, rotational movement rotating around a predetermined position, a combination of parallel movement and rotational movement, and the like. Further, the rotational movement includes a case where the center of rotation is located inside the object to be rotated and a case where the center is located outside.

  In this case, the infrared processing apparatus of the present invention includes a transport unit that transports the processing target in the transport direction, and the monitoring control unit moves the radiation intensity sensor for the processing target by the sensor moving unit. Thus, the detection point in the processing target by the processing target radiation intensity sensor is moved in the transport direction at the same speed as the processing target, so that the plurality of detection points become the same part of the processing target having different detection times. It may be. In this way, it is possible to detect a temporal change in the infrared radiation intensity from the same part to be processed. For example, when the sensor moving unit moves (translates) the processing target radiation intensity sensor in the transport direction, the monitoring control unit uses the sensor moving unit to set the processing target radiation intensity sensor as the processing target. It may be moved in the transport direction at the same speed. In addition, when the sensor moving means rotates the processing target radiation intensity sensor, the monitoring control means detects that the detection point in the processing target by the processing target radiation intensity sensor is transported at the same speed as the processing target. The processing target radiation intensity sensor may be rotated so as to move in the direction.

  In the infrared processing apparatus of the present invention of detecting the processing target radiation intensity at a plurality of detection locations, the monitoring control means includes a plurality of the infrared heaters respectively disposed at positions corresponding to the plurality of detection locations. For each of the plurality of detection points, the state of the processing target is controlled by controlling an infrared heater corresponding to the detection point so that a value based on the processing target radiation intensity at the detection point becomes a target value. May be. If it carries out like this, each state of a several different detection location can be controlled using a some infrared heater. Therefore, for example, the state of the processing target can be controlled with higher accuracy as a whole as compared with a case where there is one detection point. The “value based on the processing target radiation intensity” includes a value of the processing target radiation intensity itself, a value derived from the processing target radiation intensity, and a value representing the state of the processing target.

  The infrared processing apparatus of the present invention includes a heater radiation intensity sensor capable of detecting a heater radiation intensity that is an infrared radiation intensity from the infrared heater to the processing target, and the monitoring control unit includes the processing target radiation intensity. And at least one of the monitoring and control may be performed based on the ratio of the heater radiation intensity. Here, even if the state of the processing target is the same, the processing target radiation intensity may be detected as a different value due to different heater radiation intensity. On the other hand, the ratio between the heater radiation intensity and the treatment object radiation intensity is relatively difficult to change as long as the state of the treatment object is the same. Therefore, based on the ratio between the processing object radiation intensity and the heater radiation intensity, monitoring control of the processing object can be performed with higher accuracy. The detection of the heater radiation intensity and the detection of the processing target radiation intensity may be performed simultaneously or at different timings.

  In the infrared device of the present invention that detects the heater radiation intensity, the radiation intensity sensor for the treatment object can detect the treatment object radiation intensity when the treatment object is in the treatment space, and the treatment object is the The heater is arranged at a position where the heater radiation intensity can be detected when not in the processing space, and also serves as the heater radiation intensity sensor, and the monitoring control means is configured to detect the infrared rays when the processing target is not in the processing space. A correspondence derivation process for deriving a correspondence between a control amount for the infrared heater and the detected heater radiation intensity by controlling a heater is performed, and during the infrared processing, the detected radiation intensity to be processed and , Based on the ratio of the heater radiation intensity corresponding to the control amount for the infrared heater during the infrared treatment It may be carried out at least one of vision and control. In this way, monitoring control can be performed with higher accuracy based on the ratio of the radiation intensity to be processed and the heater radiation intensity without detecting the heater radiation intensity during infrared processing. Further, since the radiation intensity sensor for processing also serves as the heater radiation intensity sensor, the number of radiation intensity sensors can be reduced.

  In the infrared processing apparatus of the present invention, the processing target radiation intensity sensor includes a processing target first sensor that detects a processing target first radiation intensity that is a radiation intensity in a first wavelength region among infrared rays from the processing target. And a second sensor for processing target for detecting a processing target second radiation intensity that is a radiation intensity of a second wavelength region different from the first wavelength region among infrared rays from the processing target, and the monitoring The control means may perform at least one of monitoring and control of the state of the processing target based on at least one of the detected processing target first radiation intensity and processing target second radiation intensity. In this case, the monitoring control means may switch between using the processing object first radiation intensity and the processing object second radiation intensity according to the type of the processing object. Further, the monitoring control means may switch between using the processing object first radiation intensity and the processing object second radiation intensity according to the elapsed time of the infrared processing.

  In the infrared processing apparatus according to the aspect of the invention including the first sensor for processing target and the second sensor for processing target, the monitoring control unit is configured to detect the processing target first radiation intensity and the processing target second radiation intensity. The state related information related to the state of the processing target may be derived based on the information, and at least one of monitoring and control of the state of the processing target may be performed based on the derived state related information. Here, the “state-related information” is information determined in accordance with the state of the processing target, and may be, for example, the temperature of the processing target, or may be the processing target first radiant intensity and the processing target second radiant intensity. It may be a sum or a weighted sum.

  In the infrared processing apparatus of the present invention, the radiation intensity sensor for processing object detects a filter part that shields infrared light outside a predetermined wavelength region out of received infrared light, and infrared radiation intensity after passing through the filter part. And a detection unit that performs. In this way, the influence of infrared rays outside the predetermined wavelength region can be further suppressed, and the detection accuracy of the radiation intensity is improved. In the case where the first sensor for processing includes the filter unit, it is only necessary to shield infrared rays other than the first wavelength region among infrared rays received by the filter unit. Similarly, in the case where the second sensor for processing includes the filter unit, it is only necessary to shield infrared rays other than the second wavelength region among infrared rays received by the filter unit. Similarly, the heater radiation intensity sensor may include the filter unit and the detection unit.

  In the infrared processing apparatus according to the present invention, the radiation intensity sensor for processing includes a detection unit that detects the intensity of received infrared radiation, and a diaphragm unit that limits an incident direction of infrared rays that can reach the detection unit. And the said process object radiation intensity sensor may be arrange | positioned so that the opening of the said aperture | diaphragm | squeeze part may face the said process target. By so doing, it is possible to further suppress the influence of infrared rays emitted from an object other than the object to be processed, and improve the detection accuracy of the radiation intensity. When the positional relationship between the processing target radiation intensity sensor and the processing target can be changed, such as when the infrared processing apparatus includes the above-described sensor moving means, the aperture of the diaphragm unit is detected when the processing target radiation intensity is detected. What is necessary is just to make it suitable for the said process target.

1 is a longitudinal sectional view of an infrared processing device 10. FIG. AA sectional drawing of FIG. The perspective view which shows arrangement | positioning of the infrared heater 30 and the radiation intensity sensor 60. FIG. The flowchart which shows an example of a correspondence derivation routine. Sectional drawing which shows the state which connected the sheet | seat 80 to the roller 25. FIG. Explanatory drawing which shows an example of the correspondence table 93 The flowchart which shows an example of the monitoring control routine. Sectional drawing of the infrared processing apparatus 110 of a modification. Sectional drawing of the infrared processing apparatus 210 of a modification. Sectional drawing of the infrared processing apparatus 310 of a modification. Sectional drawing of the infrared processing apparatus 410 of a modification.

  Next, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a longitudinal sectional view of an infrared processing apparatus 10 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line AA of FIG. FIG. 3 is a perspective view showing the arrangement of the infrared heater 30 and the radiation intensity sensor 60 provided in the infrared processing apparatus 10. The infrared processing apparatus 10 performs infrared processing (drying processing in this embodiment) of the coating film 82 as a processing target applied on the sheet 80 by using infrared rays. The furnace body 12, the infrared heater 30, , A radiation intensity sensor 60, a controller 90, and an operation panel 98. The infrared processing apparatus 10 includes a roll 21 provided in front of the furnace body 12 (left side in FIG. 1), and a roll 25 provided in the rear of the furnace body 12 (right side in FIG. 1). . This infrared processing apparatus 10 is configured as a roll-to-roll type drying furnace in which a sheet 80 having a coating film 82 formed on the upper surface is continuously conveyed by rolls 21 and 25 and dried. In the present embodiment, the left-right direction, the front-rear direction, and the up-down direction are as shown in FIGS.

  The furnace body 12 forms a treatment space 12a for performing infrared treatment of the coating film 82. The furnace body 12 is a heat insulating structure formed in a substantially rectangular parallelepiped, and includes a front end face 13, a rear end face 14, a left end face 15, a right end face 16, a processing space 12a as an internal space, and a front end face 13 of the furnace body. And openings 17 and 18 formed on the rear end surface 14 and serving as entrances to the processing space 12a from the outside. This furnace body 12 has a length from the front end face 13 to the rear end face 14 of, for example, 2 to 10 m. The sheet 80 with the coating film 82 applied on one side passes through the processing space 12a from the opening 17 to the opening 18 substantially horizontally. A plurality of infrared heaters 30 and a plurality of radiation intensity sensors 60 are disposed in the processing space 12a.

  The infrared heater 30 is a device that radiates infrared rays to the coating film 82 in the furnace body 12. The infrared heaters 30 are arranged in a plurality of rows (three rows in this embodiment) in the left-right direction of the furnace body 12 and a plurality of rows (three rows in this embodiment) in the front-rear direction of the furnace body 12, and a total of 9 in this embodiment. A book is attached (see FIG. 3). The nine infrared heaters 30 are referred to as infrared heaters 30a to 30i from the left front toward the right rear. The nine infrared heaters 30 are attached to be arranged at substantially equal intervals in the left-right direction and the front-rear direction. All of the infrared heaters 30a to 30i are attached such that the longitudinal direction is along the left-right direction. Since all the infrared heaters 30a to 30i have the same configuration, the configuration of the left front infrared heater 30a will be described below.

  The infrared heater 30a includes a heater body 38 formed so that an inner tube 36 surrounds a filament 32 as a heating element, as shown in an enlarged view shown in a broken line frame in FIGS. The first refrigerant is formed between the outer tube 40 formed so as to surround the outer tube 40, the bottomed cylindrical cap 42 that is airtightly fitted to both ends of the outer tube 40, the heater body 38, and the outer tube 40. A possible first refrigerant channel 47. A reflective layer 41 is formed on the upper surface of the outer tube 40. A temperature sensor 56 for detecting the surface temperature of the outer tube 40 is attached to the lower surface of the outer tube 40 (see FIG. 2).

  The filament 32 is a heating element that emits infrared rays when heated, and in this embodiment, a W (tungsten) electric wire is spirally wound. In addition, examples of the material of the filament 32 include Ni—Cr alloy, Mo, Ta, and Fe—Cr—Al alloy. When the filament 32 is supplied with power from the power supply source 50 and is heated to 700 to 1700 ° C. for example, the filament 32 emits infrared light having a peak in an infrared region having a wavelength of 3.5 μm or less (for example, around 2 to 3 μm). Radiate. The electrical wiring 34 connected to the filament 32 is drawn out to the outside airtightly through a wiring lead-out portion 44 provided in the cap 42 and penetrating the upper portion (ceiling) of the furnace body 12, and is connected to the power supply source 50. . The inner tube 36 and the outer tube 40 are formed of an infrared absorbing material that functions as a filter that passes infrared rays having a wavelength of 3.5 μm or less among the electromagnetic waves radiated from the filament 32 and absorbs infrared rays having a wavelength exceeding 3.5 μm. ing. Examples of such infrared transmitting material used for the inner tube 36 and the outer tube 40 include quartz glass. The inner tube 36 has an atmosphere in which a halogen gas is added to an argon gas.

  The heater body 38 is supported at both ends by holders 49 disposed inside the cap 42. Each cap 42 has a first refrigerant inlet / outlet 48. The first refrigerant is supplied from the first refrigerant supply source 52 to one of the first refrigerant outlets 48. The first refrigerant that has flowed into the outer tube 40 from one first refrigerant inlet / outlet 48 flows through the refrigerant channel 47 and flows out from the other first refrigerant inlet / outlet 48. The 1st refrigerant | coolant which flows through the 1st refrigerant | coolant flow path 47 is gas, such as air and an inert gas, for example, contacts the inner tube | pipe 36 and the outer tube | pipe 40, and cools these by taking heat.

  The reflection layer 41 is formed in a region on the outer peripheral surface of the outer tube 40 including the side (upper side) opposite to the coating film 82 when viewed from the filament 32, and is provided so as to cover only a part of the periphery of the filament 32. Yes. In the present embodiment, the reflective layer 41 covers the entire upper half of the outer tube 40. The reflective layer 41 is arranged so that the filament 32 is positioned at the center of a circle including the arc of the cross section. The reflection layer 41 is formed of an infrared reflecting material that reflects at least a part of infrared rays of electromagnetic waves emitted from the filament 32. Examples of the infrared reflecting material include gold, platinum, and aluminum. In particular, the reflective layer 41 preferably has a high reflectance of infrared rays with a wavelength of 3.5 μm or less emitted from the filament 32. The reflective layer 41 is formed by depositing an infrared reflective material on the surface of the outer tube 40 using a film deposition method such as coating and drying, sputtering, CVD, or thermal spraying.

  In the infrared heater 30 thus configured (infrared heaters 30a to 30i), when infrared rays having a peak at a wavelength of 3.5 μm or less are emitted from the filament 32, infrared rays having a wavelength of 3.5 μm or less (wavelength 0). .7 μm to 3.5 μm near-infrared rays) pass through the inner tube 36 and the outer tube 40 and are emitted to the coating film 82 inside the furnace body 12. The inner tube 36 and the outer tube 40 absorb infrared rays having a wavelength exceeding 3.5 μm, but are cooled by the first refrigerant flowing through the first refrigerant channel 47 (for example, 200 ° C. or less), It can be suppressed to become an infrared secondary radiator.

  The radiant intensity sensor 60 is a sensor that detects the radiant intensity to be processed, which is the radiant intensity of infrared rays from the coating film 82 in the processing space 12a. The radiation intensity sensors 60 are arranged in a plurality of rows (three rows in this embodiment) in the left-right direction of the furnace body 12 and a plurality of rows (three rows in this embodiment) in the front-rear direction of the furnace body 12. Nine are attached (see FIG. 3). The nine radiation intensity sensors 60 are referred to as radiation intensity sensors 60a to 60i from the left front toward the right rear. The nine radiation intensity sensors 60 a to 60 i correspond one-to-one with the infrared heaters 30 a to 30 i, respectively, and are attached directly below the center of the corresponding infrared heater 30 in the longitudinal direction. Further, the radiation intensity sensor 60 is attached near the bottom of the furnace body 12, and is spaced downward from the coating film 82 passing through the processing space 12a. Since all of the radiation intensity sensors 60a to 60i have the same configuration, the configuration of the left front radiation intensity sensor 60a will be described below.

  As shown in the enlarged view of FIG. 1, the radiation intensity sensor 60 a includes a cylindrical body 61 that is a main body part, a throttle part (aperture) 62 attached to the tip of the cylindrical body 61, and the inside of the cylindrical body 61. And a second flow path forming member 66 attached so as to cover the outer periphery of the cylindrical body 61. The throttle part 62 is a substantially disk-shaped member, and has an opening 62a at the center. The diaphragm 62 restricts the incident direction of infrared rays that can reach the detection unit 64 from the outside of the radiation intensity sensor 60a. Infrared rays radiated mainly from the region on the extension of the opening 62a reach the detection unit 64. It is supposed to be. When the angle formed between the central axis of the opening 62a and the horizontal direction is an angle θ, the angle θ is 90 ° in the present embodiment. For this reason, infrared rays from directly above the opening 62 a reach the detection unit 64. The diameter of the opening 62a can be determined as appropriate according to the range of the infrared radiation intensity that can be reached and the distance between the coating film 82 and the radiation intensity sensor 60a, and is, for example, several mm to several tens of mm. As a material for the diaphragm 62, a material having low infrared transmittance and absorption and high infrared reflectance is preferable. In the present embodiment, the diaphragm 62 is made of aluminum.

  The filter part 63 is a substantially disk-shaped member, and is a member that functions as a band-pass filter that shields infrared rays outside the predetermined wavelength region out of infrared rays that pass through the opening 62a and travel toward the detection unit 64. The filter unit 63 is configured as an interference filter in which a surface of sapphire, quartz, silicon, or the like is coated with a thin film of Ge, ZnS, or the like. In the present embodiment, the filter unit 63 is obtained by coating sapphire with Ge, and the predetermined wavelength region is a region near a wavelength of 3 μm (more specifically, a wavelength of 3 ± 0.25 μm). That is, the filter unit 63 transmits infrared rays in the region near the wavelength of 3 μm and shields infrared rays in other wavelength regions.

  The detection unit 64 is a device that receives infrared light after passing through the opening 62 a and the filter unit 63 and detects the radiation intensity of the received infrared light. The detection unit 64 outputs an electrical signal (for example, voltage or current) corresponding to the received radiation intensity to the controller 90 via the electrical wiring 65. The electrical wiring 65 is drawn out to the outside airtightly through a wiring lead-out portion 69 provided at the lower end of the cylindrical body 61 and penetrating the bottom of the furnace body 12, and is connected to the controller 90. As the detection unit 64, for example, a photodiode made of InAs, InAsSb, InSb, PbSe, or the like can be used. In addition, it is preferable that the detection part 64 uses what has high detection sensitivity of the radiation intensity of the predetermined wavelength range mentioned above. In the present embodiment, the detection unit 64 is an InAs photodiode, and outputs a voltage of, for example, 0 mV to several hundred mV depending on the received infrared radiation intensity. Note that the infrared rays after passing through the filter unit 63 are input to the detection unit 64 as described above. For this reason, in the present embodiment, the detection unit 64 detects infrared radiation intensity in the vicinity of a wavelength of 3 μm (region of wavelength 3 ± 0.25 μm) out of the infrared light that has passed through the opening 62a.

  The second flow path forming member 66 is a member for cooling the radiation intensity sensor 60a and suppressing overheating. The second flow path forming member 66 is formed so as not to cover the opening 62a, and is a cylindrical member that covers the outer peripheral surface of the cylindrical body 61 in this embodiment. The second flow path forming member 66 has a second refrigerant flow path 67 that is a cylindrical space formed therein. The second flow path forming member 66 has second refrigerant inlets / outlets 68 formed at two locations. The second refrigerant is supplied to one of the second refrigerant outlets 68 from a second refrigerant supply source 54 disposed outside the furnace body 12. The second refrigerant that has flowed into the second flow path forming member 66 from the one second refrigerant inlet / outlet 68 flows through the second refrigerant flow path 67 and flows out from the other second refrigerant inlet / outlet 68. The second refrigerant flowing through the second refrigerant channel 67 is a liquid such as water, for example, and cools the radiation intensity sensor 60a by contacting the second channel forming member 66 and taking heat away.

  In the thus configured radiation intensity sensor 60a, when the coating film 82 is transported in the processing space 12a, a detection location 83a that is a portion of the coating film 82 that is located immediately above the radiation intensity sensor 60a (opening 62a). From the infrared rays reaches the detector 64. The presence of the filter unit 63 allows the detection unit 64 to detect the infrared radiation intensity in a predetermined wavelength region (region of wavelength 3 ± 0.25 μm) out of the infrared light from the detection point 83a. The radiation intensity in a predetermined wavelength region from the detection point 83a detected by the detection unit 64 is referred to as coating film radiation intensity Ec. In the present embodiment, the infrared heater 30a (filament 32) is disposed on an extension of a straight line connecting the radiation intensity sensor 60a and the detection point 83a. Therefore, the coating film radiation intensity Ec is a value based on the radiation intensity of infrared rays that are transmitted through the detection portion 83a (not absorbed by the detection portion 83a) out of the infrared rays from the infrared heater 30 mainly. Further, when the coating film 82 is not conveyed in the processing space 12a, the infrared rays from the infrared heater 30a disposed just above the opening 62a reach the detection unit 64. The presence of the filter unit 63 allows the detection unit 64 to detect the infrared radiation intensity in a predetermined wavelength region (region of wavelength 3 ± 0.25 μm) out of the infrared light from the infrared heater 30a. The radiation intensity in a predetermined wavelength region from the infrared heater 30a detected by the detection unit 64 is referred to as heater radiation intensity Eh. Similarly, the radiant intensity sensors 60b to 60i other than the radiant intensity sensor 60a are coated film radiant intensity Ec from the detection locations 83b to 83i, which are portions located directly above the coated film 82, and the corresponding infrared heaters 30b to 30i. The heater radiation intensity Eh from 30i can be detected. In addition, when distinguishing the coating film radiation intensity Ec and the heater radiation intensity Eh detected by each of the radiation intensity sensors 60a to 60i, they are respectively expressed as the coating film radiation intensity Eca to Eci and the heater radiation intensity Eha to Ehi. Further, when the detection locations 83a to 83i are not distinguished, they are described as detection locations 83.

  The sheet 80 is made of a PET film. The sheet 80 is not particularly limited, but has a thickness of 10 to 100 μm and a width of 200 to 1000 mm, for example. The coating film 82 is applied to the upper surface of the sheet 80 and is used as a thin film for MLCC (multilayer ceramic capacitor) after drying, for example. The coating film 82 includes, for example, ceramic powder or metal powder, an organic binder, and an organic solvent. In this embodiment, N-methyl-2-pyrrolidone (NMP) is used as the organic solvent.

  The controller 90 is configured as a microprocessor centered on a CPU 91, and communicates with a flash memory 92 that stores various processing programs and various data, a RAM 94 that temporarily stores data, an operation panel 98, and the like. Internal communication interface (I / F). The flash memory 92 stores various setting values and threshold values used for a correspondence derivation process and a monitoring control process described later. The flash memory 92 can store the correspondence table 93 derived by the correspondence derivation process. The correspondence table 93 will be described later.

  The controller 90 inputs the temperature of the outer tube 40 detected by the temperature sensor 56, which is a thermocouple, or the voltage representing the infrared radiation intensity detected by the detection unit 64 of the radiation intensity sensor 60 via the electric wiring 65. Or enter. Further, the controller 90 outputs a control signal to an unillustrated on-off valve or flow rate adjustment valve of the first refrigerant supply source 52 so that the temperature of the outer tube 40 does not exceed a predetermined upper limit value. The flow rate of the first refrigerant flowing through the refrigerant flow path 47 is controlled. In addition, the controller 90 outputs a control signal to an on-off valve and a flow rate adjustment valve (not shown) of the second refrigerant supply source 54 to control the flow rate of the second refrigerant flowing through the second refrigerant channel 67. Further, the controller 90 outputs a control signal for adjusting the power (supply power value W) supplied from the power supply source 50 to the filament 32 to the power supply source 50, and outputs the infrared heater 30 (from the filament 32. Infrared radiation intensity) is controlled individually. Further, the controller 90 outputs a control signal to a motor (not shown) to control the rotation speed of the rolls 21 and 25, so that the passage time of the sheet 80 and the coating film 82 in the furnace body 12, the sheet 80 and the coating film The tension applied to 82 is adjusted. The controller 90 inputs an operation signal generated in response to an operation on the operation panel 98 and outputs a display command to the operation panel 98.

  The operation panel 98 includes a display unit and an operation unit configured to include the display unit. The display unit is configured as a touch panel type LCD, and displays touch buttons that display a selection / setting button for selecting menus and items, numeric buttons for inputting various numerical values, a start button for starting infrared processing, and the like. And an operation signal based on the touch operation is transmitted to the controller 90. Further, when a display command is received from the controller 90, an image, a character, a numerical value or the like based on the display command is displayed on the display unit.

  Next, how the coating film 82 is dried by performing infrared processing (drying processing) using the infrared processing apparatus 10 thus configured will be described. First, the user passes the sheet 80 wound around the roller 21 through the processing space 12 a and then connects the sheet 80 to the roller 25. FIG. 5 is a cross-sectional view showing a state where the sheet 80 is connected to the roller 25 in the infrared processing apparatus 10. Next, when the user operates the operation panel 98 and presses the start button, the operation panel 98 transmits a processing start signal or the like to the controller 90. The controller 90 that has input the processing start signal first performs a correspondence derivation process for deriving a correspondence between the supply power value W that is a control amount for the infrared heater 30 and the heater radiation intensity Eh before performing the infrared processing. FIG. 4 is a flowchart illustrating an example of the correspondence relationship derivation routine. This routine is stored in the flash memory 92.

  When the correspondence relationship derivation routine is started, the CPU 91 first outputs a control signal to the power supply source 50 to change the supply power value W (Wa to Wi) supplied to each infrared heater 30 (30a to 30i). The value (voltage) detected by each radiation intensity sensor 60 (60a to 60i) is acquired a plurality of times as the heater radiation intensity Eh (Eha to Ehi) (step S100). The supplied power value W was a value determined between 0% and 100%, with the maximum power that the power supply source 50 can supply to each infrared heater 30 as 100%. The supplied power value W may be the power value itself. In the present embodiment, for each infrared heater 30, the supply power value W is changed from 10% to 100% in increments of 10%, and the heater radiation intensity Eh corresponding to the supply power value W is changed a plurality of times (in this embodiment, 10 times). In addition, as shown in FIG. 5, step S100 is performed in the state in which the coating film 82 does not exist in the processing space 12a. Further, the sheet 80 is a PET film and transmits the near infrared ray from the infrared heater 30 as it is with little absorption. Therefore, near infrared rays from each infrared heater 30 reach each radiation intensity sensor 60 as they are, and a value based on the radiation intensity in a predetermined wavelength region (region of wavelength 3 ± 0.25 μm) of the near infrared rays is emitted from the heater. The radiation intensity sensor 60 detects the intensity Eh. In step S100, after the CPU 91 outputs a control signal to the power supply source 50 to supply a certain supply power value W, after waiting for a predetermined time until the temperature of the filament 32 stabilizes, the corresponding heater radiation The intensity Eh may be detected. Alternatively, whether or not the temperature of the filament 32 is stabilized may be determined based on the value of the heater radiation intensity Eh, and the heater radiation intensity Eh when stabilized may be detected as a value corresponding to the supplied power value W.

  Subsequently, the CPU 91 derives a correspondence table 93 representing the correspondence between the two based on a plurality of combinations of the supply power value W and the heater radiation intensity Eh for each infrared heater 30 acquired in step S100, and the flash The data is stored in the memory 92 (step S110), and this routine is finished. FIG. 6 is an explanatory diagram illustrating an example of the correspondence relationship table 93. In the present embodiment, the heater radiation intensity Eh corresponding to each supply power value W from 1% to 100% is stored for each of the infrared heaters 30a to 30i with the supply power value W set to 1%. As described above, the detection of the heater radiation intensity Eh is performed in increments of 10%, and the number of combinations of the supply power value W and the heater radiation intensity Eh in step S100 is smaller than that in the correspondence table 93. In the present embodiment, the heater radiation intensity Eh corresponding to each supply power value W in increments of 1% is derived appropriately by performing, for example, proportional conversion based on the detection result in increments of 10%. Note that, in step S100, the supply power value W may be changed from 1% to 100% in increments of 1%, and the acquired combination of the supply power value W and the heater radiation intensity Eh may be stored as the correspondence table 93 as it is. .

  In this way, in the correspondence derivation process, the heater radiation intensity Eh corresponding to the control amount (supply power value W) to each infrared heater 30 is acquired in advance before the infrared processing and stored as the correspondence table 93. It is. The CPU 91 controls the first refrigerant supply source 52 and the second refrigerant supply source 54 from the start of the correspondence relationship derivation process to the end of the infrared ray process described later, and the outer tube 40 and the radiation intensity. The overheating of the sensor 60 is suppressed. Specifically, based on the temperature of the outer tube 40 input from the temperature sensor 56, the CPU 91 maintains the temperature of the outer tube 40 at a temperature lower than the ignition point of the solvent evaporating from the coating film 82 (for example, 200 ° C. or less). As described above, the refrigerant supply source 52 is controlled to adjust the flow rate of the first refrigerant. In addition, the CPU 91 controls the second refrigerant supply source 54 so that the flow rate of the second refrigerant flowing through the second refrigerant flow path 67 becomes a flow rate determined in advance as a set value.

  After performing the correspondence derivation process, the CPU 91 performs infrared processing (drying processing). Specifically, the CPU 91 first controls the power supply source 50 so that the power supply value W supplied to each infrared heater 30 becomes a predetermined initial value. This initial value is predetermined by experiment, for example, for each of the infrared heaters 30a to 30i and stored in the flash memory 92 so that the coating film 82 can be appropriately dried. In addition, since all the infrared heaters 30a-30c have the same position in the conveyance direction (front-back direction) of the coating film 82, the initial value is also set to the same value. The same applies to the initial values of the infrared heaters 30d to 30f and the initial values of the infrared heaters 30g to 30i. Then, the CPU 91 waits for a predetermined time, for example, until the temperature in the processing space 12a is stabilized. Thereafter, the CPU 91 rotates the rolls 21 and 25 and starts conveying the sheet 80. As a result, the sheet 80 is unwound from the roll 21 disposed at the left end of the infrared processing apparatus 10. The sheet 80 is coated with a coating film 82 on the upper surface by a coater (not shown) immediately before being brought into the furnace body 12 from the opening 17. And the sheet | seat 80 with which the coating film 82 was apply | coated is conveyed in the furnace body 12. FIG. The controller 90 controls the rotational speeds of the rollers 21 and 25 based on the processing time of the coating film 82 (passing time of the furnace body 12), the tension of the sheet 80, and the like stored in the flash memory 92 as set values. Further, the controller 90 executes a monitoring control routine which will be described later, controls the power supply source 50, and performs monitoring control processing of the infrared heater 30. And while the sheet | seat 80 passes the inside of the process space 12a of the furnace body 12, the coating film 82 formed in the upper surface of the sheet | seat 80 is dried by irradiating the infrared rays from the infrared heater 30. FIG. Thereby, the coating film 82 becomes the thin film for MLCC mentioned above. Thereafter, the sheet 80 and the thin film (the coating film 82 after drying) are carried out from the opening 18. The unloaded thin film is wound around the roll 25 together with the sheet 80. Thereafter, the thin film is peeled off from the sheet 80, cut into a predetermined shape and laminated, and an MLCC is manufactured. In the present embodiment, the atmosphere of the processing space 12a when the coating film 82 is dried is an air atmosphere.

  Here, the monitoring control routine will be described in detail. FIG. 7 is a flowchart illustrating an example of a monitoring control routine. This routine is repeatedly executed by the controller 90 during infrared processing (while the coating film 82 is being conveyed). When this monitoring control routine is executed, the CPU 91 first acquires the value (voltage) detected by each radiation intensity sensor 60 (60a to 60i) as the coating film radiation intensity Ec (Eca to Eci) (step S200). . When there is a radiation intensity sensor 60 that has not reached the coating film 82, for example, immediately after the conveyance of the coating film 82 is started, the coating film radiation intensity Ec from the radiation intensity sensor 60 is acquired. There is no need and no further processing based on this is performed. Whether or not the coating film 82 has reached directly above each radiation intensity sensor 60 may be determined by the CPU 91 based on, for example, the elapsed time from the start of infrared processing and the rotational speed of the rollers 21 and 25.

  Subsequently, the CPU 91 derives the heater radiation intensity Eh (Eha to Ehi) corresponding to the current supply power value W (Wa to Wi) of each infrared heater 30 (30a to 30i) based on the correspondence table 93. (Step S210). In step S210 when the monitoring control routine is first executed, the initial value of the power supply value W supplied to the infrared heaters 30a to 30i is set as the current power supply value W. When the monitoring control routine is executed for the second time and thereafter, the supply power value W (Wa to Wi) determined in step S240 (described later) of the previous monitoring control routine is set as the current supply power value W.

  Next, the CPU 91 derives the ratio R = coating film radiation intensity Ec / heater radiation intensity Eh based on the coating film radiation intensity Ec and the heater radiation intensity Eh derived in steps S200 and S210 (step S220). The ratio R is derived for each of the radiation intensity sensors 60. For example, for the radiation intensity sensor 60a, the ratio Ra = coating film radiation intensity Eca / heater radiation intensity Eha is derived. Similarly, the ratios Rb to Ri are derived for each of the radiation intensity sensors 60b to 60i.

  Here, the coating film radiation intensity Ec is a radiation intensity in a predetermined wavelength region (region of wavelength 3 ± 0.25 μm) from the detection portion 83 of the coating film 82 as described above. And the state of the coating film 82 of this embodiment changes with the conveyance in the process space 12a by drying with the infrared rays from the infrared heater 30. FIG. Specifically, moisture and organic solvent NMP evaporate. Water has an absorption maximum wavelength of about 2.9 μm, NMP has an absorption maximum wavelength of about 3.4 μm, and water and NMP have relatively high infrared absorptance in the wavelength range of 3 ± 0.25 μm. high. Therefore, the coating film 82 has a high infrared absorptance in the region of wavelength 3 ± 0.25 μm before the infrared treatment, and the coating film radiation intensity Ec tends to be smaller by that amount. Then, as water and NMP evaporate from the coating film 82, the infrared absorptance in the wavelength region of 3 ± 0.25 μm decreases, and the value of the coating film radiation intensity Ec tends to increase. Thus, the coating film radiation intensity Ec has a correlation with the state of the coating film 82 (here, the evaporation amount of water and NMP, that is, the degree of drying of the coating film 82).

  Even if the state of the coating film 82 is the same, the greater the infrared radiation intensity from the infrared heater 30, the greater the infrared radiation intensity transmitted through the coating film 82, and thus the coating film radiation intensity Ec tends to increase. is there. Therefore, in this embodiment, the ratio R is derived as a value obtained by removing the influence of the magnitude of the infrared radiation intensity from the infrared heater 30 from the coating film radiation intensity Ec. The ratio R corresponds to a value obtained by converting the coating film radiation intensity Ec to a value based on the heater radiation intensity Eh. Therefore, the ratio R is a value that hardly changes even if the infrared radiation intensity from the infrared heater 30 is different as long as the state of the coating film 82 is the same as the coating film radiation intensity Ec. That is, the ratio R has a higher correlation with the state of the coating film 82.

  When such ratio R is derived for each of the radiation intensity sensors 60, the CPU 91 determines whether or not the state of each detection point 83 of the coating film 82 is within an allowable range based on each ratio R (step S230). . Specifically, it is determined whether or not the ratio R is not less than the lower limit Rmin and not more than the upper limit Rmax. The lower limit Rmin and the upper limit Rmax are determined as the lower limit Ramin to Rimin and the upper limit Ramax to Rimax, respectively, corresponding to each of the detection points 83a to 83i, and are stored in the flash memory 92 in advance.

  The lower limit Rmin and the upper limit Rmax can be determined as follows, for example. First, infrared treatment is performed by changing the treatment conditions of the coating film 82 (for example, the power supply value W supplied to each of the infrared heaters 30), and the ratio R value of each detection point 83 in each case or after the infrared treatment. The quality of the coating film 82 (thin film after drying) is examined. And each range of ratio Ra-Ri in which the quality of the coating film 82 after an infrared treatment becomes in an allowable range is investigated, and the minimum Rmin and the upper limit Rmax are defined as the lower limit and the upper limit of the range. In addition, all the detection locations 83a-83c are the positions of the conveyance direction (front-back direction) of the coating film 82. Therefore, in the present embodiment, the lower limits Ramin to Rcmin are all set to the same value, and the upper limits Ramax to Rcmax are set to the same value. Similarly, the lower limits Rdmin to Rfmin are set to the same value, the lower limits Rgmin to Rimin are set to the same value, the upper limits Rdmax to Rfmax are set to the same value, and the upper limits Rgmax to Rimax are set to the same value. Further, since the coating film 82 is further dried toward the downstream in the transport direction (water and NMP evaporate) and the ratio R tends to increase, the values of the lower limit Rmin and the lower limit Rmax are also detected at the downstream of the transport direction 83. The value corresponding to is set to increase. In addition, when the ratio R is below the lower limit Rmin, it means that the corresponding detection point 83 is in a state of insufficient drying. Further, when the ratio R exceeds the upper limit Rmax, it means that the corresponding detection location is in an excessively dry state.

  When the state of the coating film 82 is within the allowable range in step S230, that is, when each of the ratios Ra to Ri is not less than the lower limit Ramin to Rimin and not more than the upper limit Ramax to Rimax, the CPU 91 calculates the ratio R (Ra to Ri). Based on the target value Rt (Rat to Rit), the supply power value W (Wa to Wi) to be supplied from the power supply source 50 to each infrared heater 30 is determined by feedback control (step S240). The target value Rt is determined as the target value Rat to Rit corresponding to each of the detection points 83a to 83i, and is stored in the flash memory 92 in advance. For example, the target value Rt may be determined as the value of the ratio R in the processing condition that the coating film 82 has the highest quality by variously changing the processing conditions of the coating film 82 in the same manner as the lower limit Rmin and the upper limit Rmax described above. . Alternatively, the target value Rt may be determined as a median value between the lower limit Rmin and the upper limit Rmax. It is assumed that other parameters used for feedback control are also stored in the flash memory 92 in advance. The feedback control in step S240 is performed, for example, by determining the supply power value Wa by PID control so that the difference between the ratio Ra and the target value Rat becomes zero. Similarly, the supply power values Wb to Wi are determined based on the ratios Rb to Ri and the target values Rbt to Rit. In step S240, not only PID control but also other feedback control such as PI control may be employed.

  When the supply power value W is determined in step S240, the CPU 91 outputs a control signal to the power supply source 50 so as to supply the determined supply power value W to the infrared heater 30 (step S250), and this routine is terminated. Thereby, the electric power based on the determined supply electric power values Wa-Wi is supplied to the infrared heaters 30a-30i. On the other hand, when the state of the coating film 82 is not within the allowable range in step S230, that is, when one or more of the ratios Ra to Ri are not less than the lower limit Ramin to Rimin and not more than the upper limit Ramax to Rimax, the CPU 91 is abnormal. A control signal is transmitted to the operation panel 98 so as to display and notify (step S260), the infrared processing is stopped (step S270), and this routine is terminated. In step S <b> 270, for example, the CPU 91 stops the rotation of the rollers 21 and 25, or outputs a control signal to the power supply source 50 so as to stop the power supply of the infrared heater 30. Note that, in addition to or instead of the display on the operation panel 98 in step S260, the operation panel 98 may output a sound for notifying abnormality.

  Thus, in this embodiment, the ratio R is derived as a value representing the state of each detection point 83 of the coating film 82, and the presence or absence of an abnormality in the state of the coating film 82 is monitored based on this value. Further, by controlling the infrared heater 30 based on the ratio R, the state of the coating film 82 is controlled so that the state (ratio R) of each detection point 83 of the coating film 82 becomes the target value Rt. is there. Moreover, the infrared heater 30 radiates infrared rays having a wavelength of 3.5 μm or less to the coating film 82 as described above. Infrared light having this wavelength is said to be excellent in the ability to break hydrogen bonds of water and solvent contained in the coating film 82, and can dry by efficiently evaporating water and solvent. By controlling the infrared heater 30 based on the ratio R, the coating film 82 can be dried efficiently and with an appropriate output of the infrared heater 30 (infrared radiation intensity to the coating film 82).

  Here, the correspondence between the components of the present embodiment and the components of the present invention will be clarified. The coating film 82 of this embodiment corresponds to the processing object of the present invention, the processing space 12a corresponds to the processing space, the furnace body 12 corresponds to the furnace body, the infrared heater 30 corresponds to the infrared heater, and the coating film radiation. The intensity Ec corresponds to the processing object radiation intensity, the radiation intensity sensor 60 corresponds to the processing object radiation intensity sensor, and the controller 90 corresponds to the monitoring control means. Further, the rollers 21 and 25 correspond to the conveying means, and the radiation intensity sensor 60 corresponds to the radiation intensity sensor for the heater.

  According to the infrared processing apparatus 10 of this embodiment described above, the radiation intensity sensor 60 detects the coating film radiation intensity Ec, which is the infrared radiation intensity from the coating film 82 (detection location 83) in the processing space 12a. . Then, based on the detected coating film radiation intensity Ec, the controller 90 monitors and controls the state of the coating film 82 during the infrared processing. Thus, since the state of the coating film 82 can be detected directly by detecting the coating film radiation intensity Ec, the state of the coating film 82 is monitored and controlled compared to the case where the state of the infrared heater 30 is detected. At least one of them can be performed with higher accuracy. For example, even if the temperature of the infrared heater 30 is detected and the infrared heater 30 is controlled based on the detected temperature, the state of the coating film 82 differs depending on the state of the furnace body 12 (for example, disturbance to the atmosphere in the processing space 12a). May end up. In addition, even if the power supply value W to the infrared heater 30 is the same, the radiation intensity of the infrared rays from the infrared heater 30 may change due to individual differences or aging deterioration, and the state of the coating film 82 may be different. is there. In the infrared processing apparatus 10 according to the present embodiment, since the state of the coating film 82 is detected using the radiation intensity sensor 60, it is difficult for the monitoring and control accuracy to be reduced due to such influence. Further, since the radiation intensity sensor 60 has higher responsiveness than the temperature sensor, it is possible to detect and control the abnormality of the coating film 82 more quickly.

  Moreover, the infrared processing apparatus 10 includes a plurality of radiation intensity sensors 60a to 60i having different detection locations 83 of the coating film 82, and the controller 90 is based on the coating film radiation intensities Eca to Eci of the plurality of detection locations 83a to 83i. The state of the coating film 82 is monitored and controlled. Therefore, since the coating film radiation intensity Ec is detected at a plurality of locations on the coating film 82, the state of the coating film 82 can be monitored and controlled more accurately.

  The infrared processing apparatus 10 includes a plurality of infrared heaters 30a to 30i arranged at positions corresponding to the plurality of detection points 83a to 83i, respectively. And the controller 90 is the infrared heater 30 corresponding to the detection location 83 so that the value (ratio R) based on the coating film radiation intensity Ec of the detection location 83 becomes the target value Rt for each of the plurality of detection locations 83a to 83i. Is controlled to control the state of the coating film 82. Thereby, each state of a plurality of different detection places 83a-83i can be controlled using a plurality of infrared heaters 30a-30i. Therefore, for example, the state of the coating film 82 can be controlled with higher accuracy as a whole as compared with the case where the number of detection points 83 is one.

  Further, the infrared processing apparatus 10 includes a radiation intensity sensor 60 that can detect a heater radiation intensity Eh that is an infrared radiation intensity from the infrared heater 30 to the coating film 82. The controller 90 monitors and controls the coating film 82 based on the ratio R between the coating film radiation intensity Ec and the heater radiation intensity Eh. As described above, the ratio R is a value that hardly changes even if the infrared radiation intensity from the infrared heater 30 is different if the state of the coating film 82 is the same. Therefore, monitoring control of the coating film 82 can be performed more accurately based on the ratio R.

  Furthermore, the radiation intensity sensor 60 can detect the coating film radiation intensity Ec when the coating film 82 is in the processing space 12a, and can detect the heater radiation intensity Eh when the coating film 82 is not in the processing space 12a. It arrange | positions and serves as the radiation intensity sensor for process objects, and the radiation intensity sensor for heaters. The controller 90 controls the infrared heater 30 when the coating film 82 is not in the processing space 12a, and derives a correspondence relationship between the control amount (supply power value W) for the infrared heater 30 and the heater radiation intensity Eh. Perform relationship derivation processing. In addition, the controller 90 sets the ratio R between the detected coating film radiation intensity Ec during the infrared processing and the heater radiation intensity Eh corresponding to the current power supply value W to the infrared heater 30 during the infrared processing. Based on this, the coating film 82 is monitored and controlled. Therefore, monitoring control can be performed more accurately based on the ratio R without detecting the heater radiation intensity Eh during infrared processing. In addition, since the radiation intensity sensor 60 serves both for the object to be processed (coating film 82) and for the heater, the number of radiation intensity sensors 60 can be reduced.

  The radiant intensity sensor 60 includes a filter unit 63 that shields infrared rays outside the predetermined wavelength region out of the received infrared rays, and a detection unit 64 that detects infrared radiant intensity after passing through the filter unit 63. doing. Thereby, the influence of infrared rays other than the predetermined wavelength region can be further suppressed, and the detection accuracy of the coating film radiation intensity Ec and the heater radiation intensity Eh is improved. The radiation intensity sensor 60 has a diaphragm 62 that restricts the incident direction of infrared rays that can reach the detector 64, and is arranged so that the opening 62 a of the diaphragm 62 faces the detection portion 83 of the coating film 82. Yes. Thereby, the influence of the infrared rays radiated from the object other than the coating film 82 (detection location 83) can be further suppressed, and the detection accuracy of the coating film radiation intensity Ec is improved. Further, since the opening 62a is arranged so as to face the infrared heater 30, the detection accuracy of the heater radiation intensity Eh is similarly improved.

  It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.

  For example, in the above-described embodiment, the radiation intensity sensor 60 is fixedly disposed in the processing space 12a, but is not limited thereto. The infrared processing apparatus 10 may include a sensor moving unit that moves the radiation intensity sensor 60. FIG. 8 is a cross-sectional view of an infrared processing apparatus 110 according to a modification in this case. The infrared processing apparatus 110 includes a sensor horizontal movement mechanism 170 that translates the radiation intensity sensor 60a along the front-rear direction instead of including the radiation intensity sensors 60d and 60g. The sensor horizontal movement mechanism 170 includes an electric cylinder 171 and a rod 171a. The electric cylinder 171 is a mechanism that generates power for moving the radiation intensity sensor 60 a in the front-rear direction, and is disposed in front of the outside of the furnace body 12. The electric cylinder 171 includes a motor (not shown) and a ball screw (not shown) connected to the drive shaft of the motor and the rod 171a. The rod 171 a is a columnar member connected to the electric cylinder 171. In this sensor horizontal movement mechanism 170, the controller 90 inputs a control signal to the electric cylinder 171 to move the rod 171a and the radiation intensity sensor 60a in the front-rear direction, and radiates directly below the detection points 83a, 83d, and 83g. The intensity sensor 60a can be moved. In the infrared processing device 110, for example, the second refrigerant inlet / outlet 68 and the wiring lead-out portion 69 may be made of a flexible member so as to be deformable in accordance with the movement of the radiation intensity sensor 60a in the front-rear direction. . In this infrared processing apparatus 110, the controller 90 moves the radiation intensity sensor 60a by the sensor horizontal movement mechanism 170, so that the heater radiation intensities Eha, Ehd of the infrared heaters 30a, 30d, 30g in step S100 of the above-described correspondence derivation routine. , Ehg are acquired sequentially. Similarly, in step S200 of the monitoring control routine, the controller 90 moves the radiation intensity sensor 60a to sequentially acquire the coating film radiation intensities Eca, Ecd, Ecg of the plurality of detection locations 83a, 83d, 83g of the coating film 82. To do. This infrared processing apparatus 110 can also obtain the same effects as those of the above-described embodiment. Further, by moving the radiation intensity sensor 60a, the radiation intensity sensor 60a also serves as the radiation intensity sensors 60d and 60g, so that the number of the radiation intensity sensors 60 can be reduced. Here, the sensor horizontal movement mechanism 170 corresponds to the sensor movement means of the present invention. In addition, although illustration is abbreviate | omitted, in the infrared processing apparatus 110, the mechanism similar to the sensor horizontal movement mechanism 170 is each attached also about the radiation intensity sensors 60b and 60c instead of providing the radiation intensity sensors 60e, 60f, 60h, and 60i. It was possible to move in the front-rear direction. In the infrared processing apparatus 110, the sensor horizontal movement mechanism 170 moves the radiation intensity sensor 60a in the front-rear direction, but it may be moved in the left-right direction. In this case, the radiation intensity sensor 60a can also serve as the radiation intensity sensors 60b and 60c. Alternatively, the infrared processing device 110 may include a sensor horizontal movement mechanism that moves the radiation intensity sensor 60a forward, backward, left, and right instead of the sensor horizontal movement mechanism 170.

  In the infrared processing apparatus 110 of the modification shown in FIG. 8, the sensor horizontal movement mechanism 170 is configured to translate the radiation intensity sensor 60 in the horizontal direction, but includes a sensor moving means for rotating the radiation intensity sensor 60. May be. FIG. 9 is a cross-sectional view of an infrared processing apparatus 210 according to a modified example in this case. The infrared processing apparatus 210 includes a sensor rotation mechanism 270 that rotates and moves the radiation intensity sensor 60d instead of including the radiation intensity sensors 60a and 60g. The sensor rotation mechanism 270 includes a motor 271 configured as a servo motor such as a stepping motor, and a drive shaft 271a that connects the motor 271 and the radiation intensity sensor 60d. The drive shaft 271a penetrates the left end surface 15 of the furnace body 12 in the left-right direction (see the broken line frame in FIG. 9). The motor 271 rotates the drive shaft 271a based on a control signal from the controller 90. As the drive shaft 271a rotates, the radiation intensity sensor 60d rotates about the left-right direction as the rotation axis. Thereby, the sensor rotation mechanism 270 can change the above-described angle θ (see FIG. 1). In this infrared processing apparatus 210, the controller 90 rotates the radiation intensity sensor 60d by the sensor rotation mechanism 270, so that the heater radiation intensities Eha, Ehd, and R of the infrared heaters 30a, 30d, and 30g in step S100 of the above-described correspondence derivation routine. Ehg is acquired sequentially. Similarly, in step S200 of the monitoring control routine, the controller 90 rotates the radiation intensity sensor 60d to sequentially acquire the coating film radiation intensities Eca, Ecd, Ecg of the plurality of detection locations 83a, 83d, 83g of the coating film 82. To do. When the angle θ is not 90 ° (in FIG. 9, when acquiring the radiation intensity from the infrared heaters 30a and 30g and the detection locations 83a and 83g), the controller 90 detects the value (voltage) detected by the radiation intensity sensor 60d. It is preferable to acquire the value after performing a correction considering a predetermined form factor as the heater radiation intensity Eh and the coating film radiation intensity Ec. The form factor is a value determined by the positional relationship between the infrared radiation surface of the detection target (infrared heater 30 (filament 32) or detection point 83) and the detection unit 64, the shape and size of the light receiving surface of the detection unit 64, and the like. Yes, it may be stored in advance in the flash memory 92 as a set value. This infrared processing apparatus 210 can also obtain the same effects as those of the above-described embodiment. Further, by rotating the radiation intensity sensor 60d, since the radiation intensity sensor 60d also serves as the radiation intensity sensors 60a and 60g, the number of the radiation intensity sensors 60 can be reduced. Here, the sensor rotation mechanism 270 corresponds to the sensor moving means of the present invention. In addition, although illustration is abbreviate | omitted, in the infrared processing apparatus 210, instead of providing the radiation intensity sensors 60b, 60c, 60h, and 60i, the same mechanisms as the sensor rotation mechanism 270 are attached to the radiation intensity sensors 60e and 60f, respectively. And can be rotated. Further, in the infrared processing apparatus 210, the sensor rotation mechanism 270 rotates the radiation intensity sensor 60d with the left-right direction as the rotation axis, but it may be rotated with the front-rear direction as the rotation axis. In this case, the radiation intensity sensor 60d can also serve as the radiation intensity sensors 60e and 60f.

  In the infrared processing apparatus 110 shown in FIG. 8, the controller 90 may move the radiation intensity sensor 60 a in the transport direction at the same speed as the coating film 82 by the horizontal movement mechanism 170. Thereby, the detection location in the coating film 82 by the radiation intensity sensor 60a can be moved in the conveyance direction at the same speed as the coating film 82. For example, the plurality of detection locations 83a, 83d, 83g are coating films having different detection times. 82 are the same part. That is, the coating film radiation intensity Eca, Ecd, Ecg acquired by moving the radiation intensity sensor 60a directly below the detection points 83a, 83d, 83g changes the coating film radiation intensity Ec from the same part of the coating film 82 at different times. The detected value. In this way, it is possible to detect how the infrared radiation intensity from a certain portion of the coating film 82 has changed over time. By storing the coating film radiation intensities Eca, Ecd, Ecg in the flash memory 92, for example, the user can know how the drying of the coating film 82 by infrared treatment has progressed over time, or the coating film 82 It can be proved that the drying of the material has been performed properly. Further, based on the coating film radiation intensities Eca, Ecd, and Ecg, the state of the coating film 82 (control of the infrared heaters 30a, 30d, and 30g) may be controlled similarly to the above-described embodiment. When the radiation intensity sensor 60a is moved in the transport direction at the same speed as the coating film 82, the coating film radiation intensity Ec is detected continuously at a number of locations, not limited to the three locations 83a, 83d, and 83g. May be stored in the flash memory 92 or the like. If such a large number of coating film radiation intensities Ec are stored, it is possible to grasp in more detail the temporal change in the infrared radiation intensity from a portion of the coating film 82. Also in the infrared processing apparatus 210 shown in FIG. 9, the controller 90 causes the sensor rotation mechanism 270 to move the detection location in the coating film 82 by the radiation intensity sensor 60d in the transport direction at the same speed as the coating film 82. The radiation intensity sensor 60d may be rotated by control. In this way, also in the infrared processing apparatus 210 shown in FIG. 9, the plurality of detection points 83a, 83d, 83g become the same part of the coating film 82 having different detection times. By doing in this way, also in the infrared processing apparatus 210 of FIG. 9, the time change of the infrared radiation intensity from the same part of the coating film 82 is detectable.

  In the embodiment described above, the radiation intensity sensor 60 is also used as the heater radiation intensity sensor. However, the present invention is not limited to this. FIG. 10 is a cross-sectional view of a modified infrared processing apparatus 310. In addition to the radiation intensity sensor 60, the infrared processing apparatus 310 includes a radiation intensity sensor 360 that measures the heater radiation intensity Eh of each infrared heater 30. In FIG. 10, only the radiation intensity sensors 360a to 360c for measuring the heater radiation intensities Eha to Ehc of the infrared heaters 30a to 30c of the radiation intensity sensor 360 are illustrated. In this infrared processing device 310, instead of performing the above-described correspondence derivation routine, the current heater radiation intensity Eh from the infrared heater 30 may be acquired using the radiation intensity sensor 360 in step S210 of the monitoring control routine. In this way, since the heater radiation intensity Eh can be detected during the infrared processing, there is no need to perform a correspondence derivation routine before the infrared processing. Further, since the current heater radiation intensity Eh is directly acquired, the detection accuracy of the heater radiation intensity Eh is improved as compared with the case where the correspondence relationship deriving routine before infrared processing is performed. When acquiring the heater radiant intensity Eh from the radiant intensity sensor 360, as in the case of the infrared processing apparatus 210 in FIG. 9, a correction that takes into account the form factor based on the positional relationship between the infrared heater 30 and the radiant intensity sensor 360, etc. It is preferable that the corrected value is acquired as the heater radiation intensity Eh. In addition, the radiation intensity sensor 360 is preferably arranged at a position that does not hinder infrared radiation from the infrared heater 30 to the coating film 82 as much as possible. For example, it is preferable to arrange in a region other than directly above or directly below the coating film 82 as in the radiation intensity sensors 360a and 360c of FIG. 10, or to dispose directly under the cap 42 as in the radiation intensity sensor 360b.

  In the embodiment described above, the radiation intensity sensor 60 detects infrared radiation intensity in the vicinity of a wavelength of 3 μm (wavelength of 3 ± 0.25 μm). However, the present invention is not limited to this, and detects the radiation intensity of other wavelength areas. May be. For example, the wavelength region detected by the radiation intensity sensor 60 can be changed by appropriately changing the material of the filter unit 63 and the film thickness of the coating. In addition, it is preferable that the radiation intensity sensor 60 detects the radiation intensity in the wavelength region where the change in the radiation intensity from the coating film 82 with the lapse of time of the infrared treatment is large. The infrared processing apparatus 10 may include a plurality of types of radiation intensity sensors that detect radiation intensity in different wavelength regions. FIG. 11 is a cross-sectional view of an infrared processing apparatus 410 according to a modified example in this case. The infrared processing device 410 has a wavelength of 2 ± 0.25 μm (referred to as a second wavelength region) in addition to the above-described radiation intensity sensor 60 that detects a radiation intensity of a wavelength of 3 ± 0.25 μm (referred to as a first wavelength region). A plurality of radiation intensity sensors 460 for detecting the radiation intensity of). The radiation intensity sensors 460 are arranged in the same number as the radiation intensity sensors 60, but only the radiation intensity sensors 460a to 460c are illustrated in FIG. Each of the radiation intensity sensors 460 is disposed at a position shifted to the right from the radiation intensity sensors 60a to 60i. The radiant intensity sensors 460a to 460c are arranged so as to be able to receive infrared rays from the infrared heater 30 (30a to 30c) and the detection points 483 (483a to 483c) located directly above. Similarly, the other radiation intensity sensors 460 can receive infrared rays from the corresponding infrared heaters 30 and detection points 483. The radiant intensity sensor 460 has the same configuration as that of the radiant intensity sensor 60 except that the film thickness of the coating of the filter unit 63 is different and shields infrared rays outside the second wavelength region. The detection unit 64 may be different between the radiation intensity sensor 460 and the radiation intensity sensor 60, such as using the detection unit 64 having high detection sensitivity in the second wavelength region as the detection unit 64 of the radiation intensity sensor 460. The radiant intensity sensor 60 and the radiant intensity sensor 460 are similar to the above-described embodiment in that the coating film radiation intensity Ec (distinguishable from the coating film first radiation intensity Ec1 and the coating film second radiation intensity Ec2) and the heater radiation intensity Eh (heater). 1st radiation intensity Eh1 and heater second radiation intensity Eh2) can be detected. In the infrared processing apparatus 410, the controller 90 performs monitoring control of the coating film 82 based on at least one of the radiation intensity detected by the radiation intensity sensor 60 and the radiation intensity detected by the radiation intensity sensor 460. For example, the coating film first radiation intensity Ec1 and the heater first radiation intensity Eh1 detected by the radiation intensity sensor 60 are used, or the coating film second radiation intensity Ec2 and the heater first detected by the radiation intensity sensor 460 depending on the processing target. It is possible to switch between using two radiant intensity Eh2. As to which of the radiation intensity sensor 60 and the radiation intensity sensor 460 is used, for example, an instruction from the user may be input via the operation panel 98, and the relationship with the processing target is stored in advance in the flash memory 92 or the like. It may be. A change in the radiation intensity between the first wavelength region and the second wavelength region from the object to be processed with the lapse of time of the infrared processing is examined in advance, and a radiation intensity for detecting the radiation intensity in the wavelength region having the larger radiation intensity change. Switching may be performed so that a sensor is used. The radiation intensity sensor 60 corresponds to the first sensor for processing object of the present invention, and the radiation intensity sensor 460 corresponds to the second sensor for processing object of the present invention. Further, the first wavelength region and the second wavelength region are not limited to the above-described ranges and may be other ranges. Moreover, it is good also as what switches which of the radiation intensity sensor 60 or the radiation intensity sensor 460 is used according to the elapsed time of infrared processing. For example, the coating location first radiation intensity Ec1 and the heater first radiation intensity Eh1 detected by the radiation intensity sensor 60 are used at the detection location corresponding to the early stage of the infrared processing, and at the detection location corresponding to the middle stage or the final stage of the infrared processing. The coating film second radiation intensity Ec2 and the heater second radiation intensity Eh2 detected by the radiation intensity sensor 460 may be used.

  Moreover, in the infrared processing apparatus 410 of FIG. 11, the state relevant information regarding the state of the coating film 82 is derived based on both the coating film first radiation intensity Ec1 and the coating film second radiation intensity Ec2, and Based on this, monitoring control of the coating film 82 may be performed. For example, the sum of the coating film first radiation intensity Ec1 and the coating film second radiation intensity Ec2 or the weighted sum is derived as state-related information, or the ratio R1 (coating film first radiation intensity Ec1 / heater first radiation intensity Eh1 ) And the ratio R2 (coating film second radiant intensity Ec2 / heater second radiant intensity Eh2) may be derived as state-related information. Then, the monitoring control routine described above may be performed using this state related information instead of the ratio R described above. Here, for example, when there are two types of substances that evaporate from the treatment target due to drying, and the respective absorption maximum wavelengths are greatly different, the first wavelength region and the second wavelength region are set near the respective absorption maximum wavelengths. By detecting the coating film first radiation intensity Ec1 (or ratio R1) and the coating film second radiation intensity Ec2 (or ratio R2), it is possible to detect the degree of evaporation of the two kinds of substances. In such a case, based on the state-related information based on both the coating film first radiant intensity Ec1 and the coating film second radiant intensity Ec2, the state of the processing target is detected more accurately, and the processing target is monitored. Control can be performed. Or you may derive | lead-out the temperature of process object based on both coating film 1st radiation intensity | strength Ec1 and coating film 2nd radiation intensity | strength Ec2. For example, the temperature to be processed may be derived by a well-known two-color method based on the ratio between the coating film first radiation intensity Ec1 and the coating film second radiation intensity Ec2 or the ratio between the ratio R1 and the ratio R2. . Then, the above-described monitoring control routine may be performed by using this processing target temperature instead of the above-described ratio R.

  In the above-described embodiment, the determination of the presence or absence of abnormality of the coating film 82 (step S230) and the control of the infrared heater 30 (steps S240 and S250) are performed in the monitoring control routine. You may go. Alternatively, the coating film 82 may be monitored by storing the ratio R derived in step S220 by the CPU 91 in the flash memory 92 without performing the processing after step S230. Even in this case, for example, by checking the stored ratio R, it is possible to grasp whether or not the infrared treatment of the coating film 82 has been properly performed, or to prove it.

  In the embodiment described above, monitoring control is performed based on the ratio R. However, monitoring control may be performed based on the coating film radiation intensity Ec without deriving the ratio R. However, it is preferable to perform completion control based on the ratio R in order to improve accuracy. If the output of the infrared heater 30 is not changed during infrared processing, such as when the power supply value W of the infrared heater 30 is set in advance as a fixed value, for example, the upper and lower limits of the abnormality determination are set in advance from the infrared heater 30. The infrared radiation intensity to the coating film 82 may be taken into consideration, and the accuracy does not decrease so much even if monitoring is performed based on the coating film radiation intensity Ec without deriving the ratio R.

  In the embodiment described above, the supply power value W is determined by feedback control in step 240, but the flow rate of the first refrigerant may also be determined. For example, when the temperature detected by the temperature sensor 56 is lower than an upper limit temperature (for example, 200 ° C.), the flow rate of the first refrigerant is set instead of setting the supply power value W to a value larger than the previous value. It may be reduced. In this way, the power consumption of the infrared heater 30 can be reduced.

  In the embodiment described above, the radiation intensity sensor 60 detects the infrared radiation intensity from the detection point 83 directly above, but is not limited thereto. The radiation intensity sensor 60 only needs to detect infrared rays from the coating film 82, and one or more infrared rays of infrared rays transmitted through the coating film 82, infrared rays emitted from the coating film 82 itself, and infrared rays reflected from the coating film 82. May be arranged so as to detect the radiation intensity. For example, the radiation intensity sensor 60 may be disposed above the coating film 82. In this case, the radiation intensity sensor 60 detects the radiation intensity of the infrared rays reflected by the coating film 82 and the infrared rays emitted by the coating film 82 itself. By doing so, the infrared radiation intensity from the coating film 82 can be detected even when the coating film 82 and the sheet 80 have low infrared transmittance.

  In the above-described embodiment, the flow rate of the second refrigerant flowing through the second refrigerant channel 67 is set in advance as a fixed set value, but is not limited thereto. For example, the controller 90 may control the flow rate of the second refrigerant so that the flow rate of the second refrigerant increases as the radiation intensity detected by the radiation intensity sensor 60 increases.

  In the embodiment described above, the radiation intensity sensor 60 includes the second flow path forming member 66 and is cooled by the second refrigerant from the second refrigerant supply source 54, but is not limited thereto. For example, the radiation intensity sensor 60 may be cooled using a Peltier element instead of cooling with the second refrigerant. Further, a mechanism for cooling the radiation intensity sensor 60 may not be provided.

  The configuration of the radiation intensity sensor 60 is not limited to the above-described embodiment. For example, the filter unit 63 may be configured by a plurality of layers. For example, the filter unit may be configured by combining a filter that shields infrared light that exceeds the upper limit of a predetermined wavelength region and a filter that shields infrared light that is lower than the lower limit of the predetermined wavelength region. The radiation intensity sensor 60 may not include at least one of the filter unit 63 and the diaphragm unit 62.

  In the above-described embodiment, the coating film 82 is dried only by the infrared rays from the infrared heater 30. For example, the coating 82 is provided with an air supply device that blows hot air such as air into the furnace body 12. The coating film 82 may be dried by the above. Not only hot air but the air supply apparatus which ventilates in the furnace body 12 may be provided.

   In the embodiment described above, the infrared processing apparatus 10 is a roll-to-roll type drying furnace that continuously conveys the coating film 82 and performs drying, but is not limited thereto. For example, the infrared processing apparatus 10 may be configured as a continuous furnace other than the roll-to-roll method, or may be configured as a batch furnace that performs drying while the coating film 82 is stopped in the furnace body 12.

  In the above-described embodiment, the infrared treatment apparatus 10 performs the drying treatment of the coating film 82 as the infrared treatment, but is not limited thereto. The infrared processing apparatus 10 may be any apparatus that performs processing by emitting infrared rays to a processing target. As the infrared treatment, for example, heat treatment, drying treatment, dehydration treatment, or the like may be performed. Further, as the infrared treatment, a treatment that causes a chemical reaction such as a dehydration cyclization reaction of a treatment target may be performed.

  In the embodiment described above, a coating film used as a thin film for MLCC (multilayer ceramic capacitor) is exemplified as the coating film 82 to be processed, but the processing target is not limited thereto. For example, it is good also considering the coating film used as the electrode for lithium ion secondary batteries after drying. Alternatively, the coating film 82 may be used as a thin film for LTCC (low temperature fired ceramics) or other green sheets.

  DESCRIPTION OF SYMBOLS 10 Infrared processing apparatus, 12 Furnace body, 12a Processing space, 13 Front end surface, 14 Rear end surface, 15 Left end surface, 16 Right end surface, 17, 18 Opening, 21, 25 Roller, 30, 30a-30i Infrared heater, 32 filament, 34 Electric wiring, 36 Inner pipe, 38 Heater main body, 40 Outer pipe, 41 Reflective layer, 42 Cap, 44 Wiring lead part, 47 First refrigerant flow path, 48 First refrigerant inlet / outlet, 49 Holder, 50 Power supply source, 52 1st refrigerant | coolant supply source, 54 2nd refrigerant | coolant supply source, 56 Temperature sensor, 60, 60a-60i Radiation intensity sensor, 61 Cylindrical body, 62 Restriction part, 62a Opening, 63 Filter part, 64 Detection part, 65 Electrical wiring, 66 second flow path forming member, 67 second refrigerant flow path, 68 second refrigerant inlet / outlet, 69 wiring outlet, 80 sheet, 82 coating film, 8 3, 83a to 83i Detection location, 90 controller, 91 CPU, 92 flash memory, 93 correspondence table, 94 RAM, 98 operation panel, 110 infrared processing device, 170 sensor horizontal movement mechanism, 171 electric cylinder, 171a rod, 210 infrared Processing device, 270 sensor rotation mechanism, 271 motor, 271a drive shaft, 310 infrared processing device, 360, 360a-360c radiation intensity sensor, 410 infrared processing device, 460, 460a-460c radiation intensity sensor, 483, 483a-483c detection location .

Claims (9)

An infrared processing apparatus that performs infrared processing by emitting infrared rays to a processing target,
A furnace body forming a treatment space for performing the infrared treatment;
One or more infrared heaters disposed in the processing space;
One or more processing target radiation intensity sensors capable of detecting a processing target radiation intensity that is an infrared radiation intensity from the processing target in the processing space;
Monitoring control means for performing at least one of monitoring and control of the state of the processing target during the infrared processing based on the detected processing target radiation intensity;
Infrared processing device equipped with. The infrared processing apparatus according to claim 1,
A plurality of the radiation intensity sensors for the processing object with different detection locations in the processing object,
With
The monitoring control means performs at least one of monitoring and control of the state of the processing target based on the processing target radiation intensity of the plurality of detection locations.
Infrared processing equipment. The infrared processing apparatus according to claim 1,
Sensor moving means for moving the processing object radiation intensity sensor;
With
The monitoring control means moves the radiation intensity sensor for processing object by the sensor moving means to detect the processing object radiation intensity at a plurality of detection locations in the processing object, and the plurality of detected processing objects Based on the radiation intensity, at least one of monitoring and control of the state of the processing target is performed.
Infrared processing equipment. The infrared processing apparatus according to claim 3,
Conveying means for conveying the processing object in the conveying direction;
With
The monitoring control means moves the detection target radiation intensity sensor in the processing target by the sensor moving means in the transport direction at the same speed as the processing target by moving the processing target radiation intensity sensor. Move the plurality of detection points to be the same part of the processing target with different detection times,
Infrared processing equipment. The infrared processing device according to any one of claims 2 to 4,
A plurality of the infrared heaters respectively disposed at positions corresponding to the plurality of detection points;
With
For each of the plurality of detection locations, the monitoring control means controls the infrared heater corresponding to the detection location so that a value based on the radiation intensity to be processed at the detection location becomes a target value. Control the state of the subject,
Infrared processing equipment. The infrared processing device according to claim 1,
A radiation intensity sensor for a heater capable of detecting a heater radiation intensity which is an infrared radiation intensity from the infrared heater to the processing target;
With
The monitoring control means performs at least one of the monitoring and control based on a ratio between the processing object radiation intensity and the heater radiation intensity.
Infrared processing equipment. The infrared processing apparatus according to claim 6,
The radiant intensity sensor for processing object is located at a position where the radiant intensity of the processing object can be detected when the processing object is in the processing space and the heater radiant intensity can be detected when the processing object is not in the processing space. Arranged, also serves as the radiation intensity sensor for the heater,
The monitoring control means derives a correspondence relationship between the control amount for the infrared heater and the detected heater radiation intensity by controlling the infrared heater when the processing target is not in the processing space. Performing the processing, and during the infrared processing, the monitoring and control based on a ratio between the detected radiation intensity to be processed and the heater radiation intensity corresponding to a control amount for the infrared heater during the infrared processing Do at least one of the
Infrared processing equipment. The infrared processing device according to any one of claims 1 to 7,
The processing target radiation intensity sensor includes a processing target first sensor that detects a processing target first radiation intensity that is a radiation intensity in a first wavelength region among infrared rays from the processing target, and an infrared ray from the processing target. A processing target second sensor for detecting a processing target second radiation intensity that is a radiation intensity of a second wavelength region different from the first wavelength region,
The monitoring control means performs at least one of monitoring and control of the state of the processing target based on at least one of the detected processing target first radiation intensity and processing target second radiation intensity.
Infrared processing equipment. The monitoring control means derives state related information related to the state of the processing target based on the detected processing target first radiation intensity and processing target second radiation intensity, and the processing based on the derived state related information Monitoring and / or controlling the condition of the object,
The infrared processing apparatus according to claim 8.

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