JP2016014138A - 半導体有機フィルムの製造方法 - Google Patents
半導体有機フィルムの製造方法 Download PDFInfo
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- JP2016014138A JP2016014138A JP2015124695A JP2015124695A JP2016014138A JP 2016014138 A JP2016014138 A JP 2016014138A JP 2015124695 A JP2015124695 A JP 2015124695A JP 2015124695 A JP2015124695 A JP 2015124695A JP 2016014138 A JP2016014138 A JP 2016014138A
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- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
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- H—ELECTRICITY
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
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- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
【解決手段】モル質量が2000グラム/モル(g/モル)以下であるp型の第一の有機半導体材料及びモル質量が2000グラム/モル(g/モル)以下であるn型の第一の有機半導体材料を含む第一の混合物を調製するステップ、第二の混合物を形成するために、第一の混合物に第二の有機半導体材料を添加するステップであって、第二の材料はモル質量が10000g/モル以上のポリマーであるステップ、並びに、第二の混合物から有機フィルムを形成するステップを含む半導体有機フィルムを製造する製造方法。
【選択図】なし
Description
‐第二の材料はn型の有機半導体ポリマーである。
‐第二の混合物において、第二の半導体材料とn型の第一の有機半導体材料との間の質量比は、0.8〜1.2である。
‐第二の材料は、p型の有機半導体材料である。
‐第二の混合物において、第二の半導体材料とp型の第一の有機半導体材料との間の質量比は、0.8〜1.2である。
‐第二の混合物において、第二の材料と、一方でn型の第一の有機半導体材料との、他方でp型の有機半導体材料との、アセンブリーの間の質量比が0.8〜1.2である。
‐調製ステップにおいて、第一の混合物は溶媒又は溶媒の混合物も含む。
‐第二の混合物は、第一の混合物よりも高度に溶解性である。‐第二の混合物の粘度は2mPa.sより大きく、好ましくは3mPa.sより大きい、
‐以下の技術の1つを用いて形成ステップが実施される
・コーティング又は印刷技術、
・ロール・ツー・ロール技術と呼ばれるアンローリングによるコーティング又は 印刷技術、
・スロットダイコーティング技術、‐スクリーン印刷方法、
・フレキソ法、及び
・インクジェット法。
・フラーレン、
・メチル[6,6]‐フェニル‐C61‐ブチレート(PC60BMとも表記)、
・[6,6]‐フェニルC61‐酪酸メチルエステル(C60‐PCBM)、
・[6,6]‐フェニルC71‐酪酸メチルエステル(C70‐PCBM)、
・ビス(1‐[3‐(メトキシカルボニル)プロピル]‐1‐フェニル)[6.6]C62(ビス‐C60‐PCBM)、
・3’‐フェニル‐3’H‐シクロプロパ[8,25][5,6]フラーレン‐C70‐ビス‐D5h(6)‐3’‐ブタン酸メチルエステル(ビス‐C70‐PCBM)、
・C60‐インデンビス付加体(ICBA)及び
・モノインデンニルC60(ICMA)。
‐試薬の再現性(より大きいばらつき(―鎖長―不安定な特性につながる)を有するポリマーとは異なる小分子の性質)。
‐ロール・ツー・ロール工業法によってコートされることが意図される試薬のフィルム均一性。この特性は、ポリマーの性質に本来備わっている。この特性は、ポリマーを考案するステップの間に調節してよい。粘度は、モジュールの製造にとって必要なシャープな外形を得る可能性を与える。
実験は、第二の混合物
‐第一の材料はDTS(FBTTH2)2であり、ポリマーはP3HTであり、及び
‐p型の有機半導体材料はPCBMである、
について実施する。
‐ドナーとアクセプターとの比は、質量比が1対1である、
‐溶媒の比は1‐メチルナフタレン(Mna)の質量50%に対してo‐キシレンの質量が50%であり、
‐全ドナー濃度が20g/Lであり、および
‐試薬量は10mlである。
‐ポリマーの相対的な質量比、ポリマーの相対的な質量比を、分数の分子が第二の混合物中のポリマーの質量であり、また分母が第二の混合物中のポリマーの質量と、第二の混合物中の同じ型の第一の材料の質量との合計である比として規定すること、及び
‐第一の材料の質量比、第一の材料の相対的な質量比を、分数の分子が第二の混合物中の第一の材料の質量であり、また分母が第二の混合物中のポリマーの質量と、第二の混合物中の同じ型の第一の材料の質量との合計である比として規定すること。
1)n型の有機半導体材料(PCBM)及び溶媒を20mlのガラス製バイアル中で秤量すること、
2)n型の有機半導体材料と溶媒とを混合すること、
3)ステップ2)の終わりにて得られた混合物の撹拌を60°Cにおいて3時間、900rpmにて開始すること、
4)p型の第一の材料(DTS(FBTTH2)2)を秤量し、そして添加すること、
5)第一の混合物を調製すること、
6)p型の半導体ポリマー(P3HT)を秤量し、そして添加すること、
7)第二の混合物を得ること、
8)第二の混合物の撹拌を60°Cにおいて18時間、900rpmにて開始すること、9)第二の混合物の溶解性を肉眼で観察すること、
10)オーブン中で30°Cにて第二の混合物を保持する間に、測定をRheoStress Rheometerで実施し、粘度をC35/0.5°コーンで分析する、レオロジー的測定を実施した。粘度は装置の幾つかの回転速度について測定する、すなわち500-1、1000s-1又は10000s-1、
11)自動フィルムアプリケーター又は12.5μmスロットを備えるドクターブレードを用いることにより、40°Cの温度かつ40mm/sの速度にてITO及びPET上に第二の混合物をコートすること、
12)80°Cの温度において実施する乾燥させること、
13)コーティングの品質を肉眼で観察すること、並びに
14)紫外‐可視分光光度計で層の吸収を測定すること。
Claims (15)
- ‐モル質量が2000グラム/モル(g/モル)以下であるp型の第一の有機半導体材料及びモル質量が2000グラム/モル(g/モル)以下であるn型の第一の有機半導体材料を含む第一の混合物を調製するステップ、
‐第二の混合物を形成するために、第一の混合物に第二の有機半導体材料を添加するステップであって、第二の材料はモル質量が10000g/モル以上のポリマーであるステップ、並びに
‐第二の混合物から有機フィルムを形成するステップ
を含む半導体有機フィルムを製造する製造方法。 - 第二の材料が、n型の有機半導体ポリマーである、請求項1に記載の方法。
- 第二の混合物において、第二の半導体材料とn型の第一の有機半導体材料との質量比が、0.8〜1.2である、請求項2に記載の方法。
- 第二の材料が、p型の有機半導体ポリマーである、請求項1に記載の方法。
- 第二の混合物において、第二の半導体材料とp型の第一の有機半導体材料との質量比が、0.8〜1.2である、請求項4に記載の方法。
- 第二の混合物において、第二の材料全体と、一方でn型の第一の有機半導体材料との、他方でp型の有機半導体材料との、質量比が0.8〜1.2である、請求項1〜5のいずれか1項に記載の方法。
- 調製ステップにおいて、第一の混合物が、溶媒又は溶媒の混合物も含む、請求項1〜6のいずれか1項に記載の方法。
- 第二の混合物が、第一の混合物と比べてより溶解性である、請求項1〜7のいずれか1項に記載の方法。
- 第二の混合物の粘度が、2mPa・sを超え、好ましくは3mPa・sを超える、請求項1〜8のいずれか1項に記載の方法。
- 形成ステップが、以下の技術
‐コーティング又は印刷技術
‐ロール・ツー・ロール技術と呼ばれるコーティング又は印刷技術、
‐スロットダイコーティング技術、
‐スクリーン印刷法、
‐フレキソ法、及び
‐インクジェット法
の1つを用いることにより実施される、請求項1〜9のいずれか1項に記載の方法。 - 半導体有機フィルムのストリップの製造のための、請求項1〜10のいずれか1項に記載の半導体有機フィルムに関する方法の使用。
- 請求項1〜10のいずれか1項に記載の製造方法により製造された有機フィルム。
- 請求項12に記載の有機フィルムのコーティングにより製造された活性層を含む有機太陽電池。
- 請求項12に記載の有機フィルムのコーティングにより製造された電池を含む有機太陽電池モジュール。
- ‐基材を供給するステップ、及び
‐請求項11に記載の使用により得られた有機フィルムストリップで基材をコーティングするステップ、
を含む太陽電池モジュールの有機太陽電池の活性層の製造方法。
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GEENS W ET AL: ""The Advantages of Vacuum Deposition as a Technique to Grow PPV-Oligomer/C60 Thin Films for Organic", PROCEEDINGS OF SPIE, SPIE-THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING", vol. 3975, JPN6019015438, 1999, pages 1246 - 1249, XP008001920, ISSN: 0004025944 * |
JEN-HSIEN HUANG ET AL: ""A ternary cascade structure enhances the efficiency of polymer solar cells"", JOURNAL OF MATERIALS CHEMISTRY, vol. 20, JPN6019015437, 2010, pages 2820 - 2825, ISSN: 0004201973 * |
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