JP2016011912A - Probe, contact gauge and processing measuring apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe for which arithmetic surface roughness of a probe top is minimal, and a contact gauge.SOLUTION: For the probe, a material 24 comprised of a polycrystal CVD diamond 20 in which a substrate 26 and a substrate surface 27 are grown by CVD as a growth initiation surface 21 and an outermost surface is used as a grown surface 22, is used as a raw material. A particle size of a crystallite 23 has a property of increase from the growth initiation surface 21 to the grown surface 22. The polycrystal CVD diamond 20 is separated from the substrate 26, a pre-crystal CVD diamond chip 14 is cut from the polycrystal CVD diamond 20, the polycrystal CVD diamond chip 14 is polished from the growth initiation surface 21, and the polycrystal CVD diamond chip 14 is configured in such a manner that a final polished surface 28 becomes a measuring surface 16.

Description

  The present invention relates to a measuring element (also referred to as a contactor) and a contact gauge for measuring a dimension of an object, and more particularly, to a processing measuring apparatus that processes an object while measuring the object and accurately finishes it to a predetermined shape. Concerning probe and contact gauge used.

As a conventional contact gauge, “a dial gauge gauge and its manufacturing method” described in JP-A-2004-53418 (Patent Document 1) is known. FIG. 10 of the present application is a schematic view of the dial gauge probe.
In the probe 101, a base member 103 is provided with a tip member 102 having a recess projecting from the upper surface, and a member in which an artificial diamond layer 102b is integrally formed at the tip of a cemented carbide layer 102a is disposed. The cemented carbide layer 102a of the member is fitted into the recess and brazed so that the artificial diamond layer 102b protrudes.

JP 2004-53418 A

In Patent Document 1, a measuring element 101 is illustrated in which the tip surface of the artificial diamond layer 102b is polished into a curved surface to be a measurement surface, and the measurement surface top that is in contact with the object to be measured is the top of the measurement surface.
However, everywhere in Patent Document 1, only the artificial diamond layer 102b is described, and the characteristics of the artificial diamond layer are not described at all. The filing date of this Patent Document 1 is July 19, 2002, and the artificial diamond at that time was developed with the aim of single crystal diamond replacing natural diamond, and the artificial diamond layer 102b is formed of single crystal diamond. It is common sense as a person skilled in the art to think that.

  As is well known, single crystal diamond is configured by regularly stacking unit cells serving as crystal units. When the surface of the single crystal diamond is polished into a curved surface and processed into a measurement surface, the surface of the single crystal is greatly cleaved and a curved surface is formed in a stepped shape. Each step of the staircase consists of a cleavage plane, and an infinite number of cleavage planes form a measurement surface that is curved in a staircase pattern. When viewed microscopically, the level difference on the cleavage plane is quite large, and in the case of single crystal diamond, the level difference on the cleavage plane is quite large. Therefore, the surface roughness of the measurement surface of the single crystal diamond is considerably large. As will be described later as a comparative example with the present invention, when single crystal diamond is polished under the same conditions as the present invention, the arithmetic surface roughness Ra = 0.3731 (μm) and the ten-point average roughness Rz = 1.85777 (Μm).

  Of course, the smaller the surface roughness of the top of the measurement surface that is in contact with the surface of the object, the more precisely the processed surface of the object can be measured. As described above, when single crystal diamond is used as a measuring element, the arithmetic surface roughness Ra of the top of the measuring surface exceeds 0.3 (μm), and there is a weak point as a measuring element and a contact gauge for precision measurement. I must say that I am doing.

  Therefore, according to the present invention, the arithmetic surface roughness Ra of the probe top formed by polishing using polycrystalline CVD diamond as a material for the probe and utilizing the extremely small particle size of the crystallite of the polycrystalline CVD diamond. An object of the present invention is to provide a contact gauge using the measuring element.

  The present invention has been made to solve the above problems, and a first aspect of the present invention is a contact gauge probe used for measuring an object, and a measurement surface for measuring the object. Is a measuring element composed of a measuring surface of a polycrystalline CVD diamond chip.

  In the second embodiment of the present invention, the arithmetic average roughness Ra of the measurement surface top contacting the object in the measurement surface is 0.1 (μm) or less, and the ten-point average roughness Rz is 0.8. It is a measuring element which is 5 (μm) or less.

  According to a third aspect of the present invention, the polycrystalline CVD diamond is formed from a raw material made of polycrystalline CVD diamond which is grown by CVD with the substrate surface as the growth start surface and the outermost surface as the growth surface. The crystallite has a characteristic that the grain size of the crystallites gradually increases from the growth start surface to the growth surface, and separates the polycrystalline CVD diamond from the substrate, and the polycrystalline CVD diamond chip is cut from the polycrystalline CVD diamond. A measuring element that polishes the polycrystalline CVD diamond chip from its growth start surface and constitutes the polycrystalline CVD diamond chip so that the final polished surface becomes the measurement surface.

  According to a fourth aspect of the present invention, the measurement surface top of the measurement surface is a measurement element arranged in a region where the grain size of the crystallite is 20 μm or less.

  According to a fifth aspect of the present invention, the measuring element of the above-described form and an arm in which the measuring element is fixed to a side surface of the tip of the arm are provided, and the measuring surface of the polycrystalline CVD diamond chip protrudes from the measuring element. It is a contact gauge.

  According to a sixth aspect of the present invention, at least one contact gauge of the above-described form is prepared, and a contact gauge device that measures on the measurement surface of the polycrystalline CVD diamond chip, and a predetermined shape while being measured by the contact gauge device. An object to be processed, a processing device for processing the object into a predetermined shape, a computer device for controlling processing by the processing device and measurement by the contact gauge device, and the computer device controlling processing and measurement This is a machining measurement device incorporating a machining measurement control program.

According to the first aspect of the present invention, there is provided a contact gauge measuring element used for measuring an object, wherein the measuring surface for measuring the object is composed of a measuring surface of a polycrystalline CVD diamond chip. Provided.
In the present invention, the measurement protrusion of the probe is constituted by a polycrystalline CVD diamond tip. A polycrystalline CVD diamond tip is formed by cutting from polycrystalline CVD diamond. Polycrystalline CVD diamond is formed in layers on the substrate surface by CVD (chemical vapor deposition). The substrate surface serves as a growth start surface, and is stacked from the growth start surface upward, and the stack thickness increases sequentially while the uppermost growth surface grows upward. Polycrystalline CVD diamond is formed by accumulating innumerable single crystallites, but the crystallite grain size on the growth start surface is the smallest, about 0.1 μm to 1 μm. The grain size becomes 1 μm to 5 μm, 5 μm to 10 μm, 10 μm to 20 μm, and further upward, the crystallite grain size becomes 20 μm to 100 μm. The diameter reaches 100 μm to 500 μm.

  In the present invention, the stacked polycrystalline CVD diamond is separated from the substrate. In the separated polycrystalline CVD diamond, the bottom surface is the growth start surface and the top surface is the growth surface. Therefore, the polycrystalline CVD diamond is turned upside down so that the bottom surface is the growth surface and the top surface is the growth start surface. When a polycrystalline CVD diamond chip of a predetermined shape is cut out from this polycrystalline CVD diamond, the crystallite grain size of the growth start surface, which is the upper surface, is extremely small, and the growth start surface of this polycrystalline CVD diamond chip is polished to form a measurement surface. To do. When polished in a convex manner, the top of the measurement surface at the center is closest to the growth start surface, so the crystallite grain size of the measurement surface top is the smallest, and the surface roughness of the measurement surface top is set to the minimum. be able to. When the surface is polished, the measurement surface is formed while the crystallites are finely cleaved, and the arithmetic average roughness Ra of the measurement surface can be set to be extremely small, especially the arithmetic average roughness of the top of the measurement surface that is a convex surface. Ra (μm) can be set to the smallest value.

In addition, the fracture toughness of polycrystalline CVD diamond is 8.2 (MPam ^1/2 ), which is compared with the single crystal diamond having a fracture toughness of 3.6 (MPam ^1/2 ). Is much more durable than single crystal diamond.
Furthermore, the 20 ° C. and 200 ° C. thermal conductivities of polycrystalline CVD diamond are 1050 to 1150 (W / mK) and 950 to 1050 (W / mK), respectively, whereas 650 to 2250 for single crystal diamond. (W / mK) and 650 to 1150 (W / mK), and the thermal conductivity is almost the same as that of single crystal diamond, the measuring element of this embodiment has a measuring element top on the surface of the rotating object. Even if they are brought into contact with each other, there is an advantage that the polycrystalline CVD diamond has a high thermal conductivity and is hardly affected by heat.
These features have commonality as an advantage of the probe of the present invention through the first to fourth embodiments.

According to the second mode of the present invention, the arithmetic average roughness Ra of the measurement surface top that contacts the object in the measurement surface is 0.1 (μm) or less, and the ten-point average roughness Rz is It is a measuring element which is 0.5 (μm) or less.
As described above, in the present invention, the polycrystalline CVD diamond is separated from the substrate, and the separated polycrystalline CVD diamond is turned upside down so that the bottom surface is the growth surface and the top surface is the growth start surface. When a polycrystalline CVD diamond chip of a predetermined shape is cut out from this polycrystalline CVD diamond, the crystallite particle size on the growth start surface side which is the upper surface is 0.1 μm to 1 μm, and 1 μm to 5 μm, 5 μm to 10 μm as it goes downward, 10 μm to 20 μm, 20 μm to 100 μm when going further downward, and 100 μm to 500 μm on the bottom growth surface side. Therefore, when the measurement surface is formed by polishing the upper surface of the growth start surface side upward, the top of the measurement surface is adjusted to the crystallite grain size region as described above to adjust the top of the measurement surface. Arithmetic surface roughness Ra can be arbitrarily adjusted. Therefore, the arithmetic average roughness Ra of the top of the measurement surface contacting the surface of the object to be measured can be easily set to 0.1 (μm) or less, and the ten-point average roughness Rz is set to 0.5 (μm) or less. It is also possible to adjust, and a high-definition measuring element can be provided.

According to the third aspect of the present invention, the polycrystalline CVD diamond is obtained by using as a raw material a polycrystalline CVD diamond which is grown by CVD using the substrate and its substrate surface as a growth start surface and having the outermost surface as a growth surface. The grain size of the crystallites constituting the film has a property of gradually increasing from the growth start surface toward the growth surface, separating the polycrystalline CVD diamond from the substrate, and the polycrystalline CVD diamond tip is separated from the polycrystalline CVD diamond. It is possible to provide a measuring element that is cut out and polished from the growth start surface of the polycrystalline CVD diamond chip so that the final polished surface becomes the measurement surface.
As described above, the crystallite grain size on the growth start surface side increases from 0.1 μm to 1 μm, further from 1 μm to 5 μm, from 5 μm to 10 μm, from 10 μm to 20 μm, and further from 20 μm to 100 μm. On the side, it reaches 100 μm to 500 μm. Therefore, when the measurement surface is formed by polishing from the growth start surface, the arithmetic surface roughness of the entire measurement surface can be arbitrarily reduced. In particular, the measurement surface top that contacts the measurement surface of the object is the side closest to the growth start surface. Therefore, the arithmetic surface roughness Ra at the top of the measurement surface can be reduced to the limit, and a high-definition and high-precision probe can be provided.

According to the 4th form of this invention, the measuring element arrange | positioned in the area | region whose particle size of a crystallite is 20 micrometers or less can provide the measuring surface top of the said measuring surface.
As described above, the measurement surface top that comes into contact with the measurement surface of the object can be formed so as to exist on the side closest to the growth start surface. The crystallite grain size on the growth start surface side is gradually increased from 0.1 μm to 1 μm, and further from 1 μm to 5 μm, 5 μm to 10 μm, and 10 μm to 20 μm, so that the crystallite grain size is 20 μm or less. If polishing is performed so that the measurement surface top is arranged, the arithmetic average roughness Ra of the measurement surface top can be easily set to 0.1 (μm) or less, and the ten-point average roughness Rz is 0.5 (μm) or less. Therefore, it is possible to realize a high-definition measuring element.

According to the fifth aspect of the present invention, the measuring element of the above-described form and an arm in which the measuring element is fixed to an arm tip portion are formed, and the measuring surface of the polycrystalline CVD diamond chip protrudes from the measuring element. A contact gauge can be provided.
In this embodiment, the measurement surface of the polycrystalline CVD diamond chip is projected, and the measurement surface of the object to be measured is measured by the measurement surface of the polycrystalline CVD diamond chip. Has the advantage that can be implemented. In particular, since the measurement surface top that protrudes most among the measurement surfaces is in contact with the measurement surface of the object, the contact gauge of the present invention has an arithmetic surface roughness Ra of the measurement surface top that is extremely small. Has an effect that can be determined with high definition.

As described above, the crushing toughness of polycrystalline CVD diamond is 8.2 (MPam ^1/2 ), and the crushing toughness of single crystal diamond is 3.6 (MPam ^1/2 ). The contact gauge is characterized by being much more durable than single crystal diamond.
Further, the 20 ° C. thermal conductivity and 200 ° C. thermal conductivity of polycrystalline CVD diamond are 1050 to 1150 (W / mK) and 950 to 1050 (W / mK), respectively, whereas 650 to 2250 for single crystal diamond. (W / mK) and 650 to 1150 (W / mK), and the thermal conductivity is almost equal to that of single crystal diamond, the contact gauge of the present invention has a probe top on the surface of the object in a rotating state. Even if they are brought into contact with each other, the thermal conductivity of polycrystalline CVD diamond is high, so that there is an advantage that it is hardly affected by heat.

According to the sixth aspect of the present invention, one or more contact gauges of the above-mentioned form are prepared, a contact gauge device that measures on the measurement surface of the polycrystalline CVD diamond chip, and a predetermined while being measured by the contact gauge device An object to be processed into a shape, a processing device for processing the object into a predetermined shape, a computer device that controls processing by the processing device and measurement by the contact gauge device, and the computer device performs processing and measurement. It is a machining measurement device incorporating a machining measurement control program to be controlled.
Since the contact gauge device of the present invention uses the contact gauge of the fifth embodiment of the present invention, it has all the advantages of the contact gauge of the present invention. That is, since the measurement surface of the object to be measured is measured by the measurement surface of the polycrystalline CVD diamond tip, there is an advantage that the measurement of the object can be performed with high definition. In addition, since the fracture toughness of polycrystalline CVD diamond is 8.2 (MPam ^1/2 ), the contact gauge device of the present invention is characterized by being much more durable than single crystal diamond. Furthermore, since the thermal conductivity of polycrystalline CVD diamond is almost the same as that of single crystal diamond, the contact gauge device of the present invention can be used even if the probe top is brought into contact with the surface of a rotating object. Since CVD diamond has a high thermal conductivity, it has the advantage of being hardly affected by heat.

Since the machining measurement apparatus of the present invention is controlled by a computer device having a machining measurement control program for controlling machining and measurement, machining measurement can be performed automatically.
In particular, the machining measurement control program determines whether or not the object has been set, determines whether or not to process, and determines whether or not the machining time has elapsed when the machining device is turned on. Since at least the step of determining whether or not the processing has reached the target value when the contact gauge device is set and the step of resetting the contact gauge device and continuing the processing when the processing does not reach the target value, It has an advantage that machining measurement can be automated by repeating machining and measurement.

FIG. 1 is a cross-sectional view of a main part on the tip side of a contact gauge according to the present invention. FIG. 2 is a side view and a plan view showing the entire contact gauge according to the present invention. FIG. 3 is a schematic explanatory view of a polycrystalline CVD diamond chip constituting the measuring element according to the present invention. FIG. 4 is a process explanatory diagram for manufacturing a measuring element by cutting out a polycrystalline CVD diamond chip and bonding it to a holder in the present invention. FIG. 5 is an explanatory diagram of a process for manufacturing a contact gauge by forming a measuring surface by polishing a growth start surface of a polycrystalline CVD diamond chip together with a holder in the present invention. FIG. 6 shows a process using a contact gauge device having a pair of contact gauges according to the present invention, while measuring the diameter of the inner peripheral surface of the target object until the inner peripheral surface of the target object reaches a predetermined value. It is a schematic block diagram of the process measurement part of the process measurement apparatus to perform. FIG. 7 is a block diagram of the machining measurement apparatus according to the present invention. FIG. 8 is a flowchart of a machining control program of a machining measurement apparatus that performs machining using a machining apparatus without driving an object while measuring with the contact gauge apparatus according to the present invention. FIG. 9 is a flowchart of a machining control program of a machining measurement apparatus that drives an object while machining with the machining apparatus while measuring with the contact gauge device according to the present invention. FIG. 10 is a schematic diagram of a dial gauge probe disclosed in Japanese Patent Application Laid-Open No. 2004-53418 (Patent Document 1), which is a conventional technique.

Hereinafter, embodiments of a probe, a contact gauge, and a processing measurement apparatus according to the present invention will be described in detail according to the drawings and tables.
FIG. 1 is a cross-sectional view of a main part on the tip side of a contact gauge according to the present invention. A fitting hole 4 is opened in the arm tip 3 of the contact gauge 1, and a measuring element 10 is fitted on the inner peripheral surface of the fitting hole 4 by a measuring element bonding layer 6. The probe bonding layer 6 becomes a strong bonding layer by brazing with a brazing material, but other bonding means such as an adhesive or mechanical means such as caulking may be used. In the measuring element 10, the polycrystalline CVD diamond chip 14 is fitted in the recess 13 of the holder 12, and the polycrystalline CVD diamond chip 14 is fitted on the inner surface of the recess 13 by the chip bonding layer 18. The chip bonding layer 18 becomes a strong bonding layer by brazing with a brazing material, but it goes without saying that other bonding means such as an adhesive or mechanical means such as caulking may be used.
The polycrystalline CVD diamond chip 14 has a measurement surface 16 that is curved to protrude outward. The highest vertex of the measurement surface 16 is a measurement surface top 17, and the measurement surface top 17 is an object to be measured. The measurement surface of the object is measured by contacting the measurement surface. Accordingly, the surface roughness of the measurement surface 16 including the measurement surface top 17 is extremely small, and in particular, the arithmetic surface roughness Ra in the vicinity of the measurement surface top 17 is set to 0.1 μm or less, and the ten-point average roughness. Rz is also adjusted to 0.5 (μm) or less.

FIG. 2 is a side view and a plan view showing the entire contact gauge according to the present invention. 2A is a side view of the contact gauge 1. FIG. The contact gauge 1 is composed of an arm 2 and a measuring element 10 attached and fixed to the arm tip 3, and a measuring surface 16 of a polycrystalline CVD diamond tip 14 of the measuring element 10 is projected from a plane. Further, a connecting hole 7 is opened at the rear end portion of the arm 2 and is configured to be fixed to a contact gauge device G described later via the connecting hole 7.
(2B) is a plan view of the contact gauge 1, and a measurement surface 16 of a polycrystalline CVD diamond tip 14 protrudes from the arm tip 3 of the arm 2. The contact gauge 1 is connected and fixed to various contact gauge devices G.

  FIG. 3 is a schematic explanatory view of a polycrystalline CVD diamond chip constituting the measuring element according to the present invention. (3A) is a schematic diagram of the material 24 in which the polycrystalline CVD diamond 20 is formed on the substrate surface 27 of the substrate 26 by CVD (chemical vapor deposition). The polycrystalline CVD diamond 20 grows upward from the growth start surface 21 on the substrate surface 27 side, and finally grows to the growth surface 22 which is the uppermost surface. The polycrystalline CVD diamond 20 is formed by laminating crystallites 23 that are innumerable single crystal grains. The crystallite grain diameter gradually increases from the growth start surface 21 to the growth surface 22. In the vicinity of the growth start surface 21, the crystallite particle size is about 0.1 μm to 1 μm, and the crystallite particle size increases to 1 μm to 5 μm, 5 μm to 10 μm, and 5 μm to 20 μm as it approaches the growth surface 22. However, when further away, it becomes 20 μm to 100 μm, and reaches 100 μm to 500 μm on the growth surface side. That is, the closer to the growth surface 22, the more the crystallite grain size increases in order to become a single crystal. In (3A), regions of 20 μm and 500 μm as crystallite grain sizes are shown.

  In (3B), the polycrystalline CVD diamond 20 that has been grown is separated from the substrate 26, and the polycrystalline CVD diamond chip 14 immediately after being cut out from the polycrystalline CVD diamond 20 to a predetermined size is shown upside down. Yes. Accordingly, the reference numerals of both the polycrystalline CVD diamond 20 and the polycrystalline CVD diamond tip 14 are described. Since the upper and lower sides are inverted, the upper surface corresponds to the growth start surface 21, and the lower surface corresponds to the growth surface 22. The crystallite particle size increases as it goes downward from the growth start surface 21 to the growth surface 22, and the crystallite particle sizes of 20 μm and 500 μm are appended.

  In the present invention, polishing is started from the growth start surface 21 and polished so as to be convex toward the growth start surface 21, and the polishing surface 28 becomes the final polishing surface, and this final polishing surface forms the measurement surface 16. In particular, the apex of the polishing surface 28 becomes the measurement surface top 17 in contact with the measurement surface of the object, and the arithmetic surface roughness Ra in the vicinity of the measurement surface top 17 becomes closer to at least the measurement surface top 17 as close to the growth start surface 21 as possible. The ten-point surface roughness Rz can be set small. In this embodiment, polishing is performed so that the measurement surface top 17 enters at least a region having a crystallite grain size of 20 μm or less, that is, a region 29 within 20 μm. As a result, the arithmetic surface roughness Ra in the vicinity of the measurement surface top 17 can be set to 0.1 μm or less, and the ten-point surface roughness Rz can be set to 0.5 μm or less. Of course, if the measurement surface top 17 is polished as close to the growth start surface 21 as possible, the arithmetic surface roughness Ra in the vicinity of the measurement surface top 17 can be made considerably smaller than 0.1 μm and the ten-point surface roughness Rz. Needless to say, can be set considerably smaller than 0.5 μm.

FIG. 4 is a process explanatory diagram for manufacturing a measuring element by cutting out a polycrystalline CVD diamond chip and bonding it to a holder in the present invention.
(4A) shows a process diagram of cutting the polycrystalline CVD diamond chip 14 from the polycrystalline CVD diamond 20, and it can be considered that the polycrystalline CVD diamond chip 14 is shown in (3B). The upper surface is the growth start surface 21, and the lower surface is the growth surface 22.
FIG. 4B is a process diagram for fitting the polycrystalline CVD diamond chip 14 into the recess 13 of the holder 12 with the growth start surface 21 as the upper surface. The shape of the polycrystalline CVD diamond tip 14 is formed to be slightly smaller than the shape of the recess 13 of the holder 12.
(4C) is a process diagram in which the polycrystalline CVD diamond chip 14 is fitted into the recess 13 of the holder 12 and the brazing material powder 31 is introduced from above. The material of the brazing material powder 31 depends on the material of the holder 12 and the material of the polycrystalline CVD diamond chip 14. For example, if the holder 12 is made of stainless steel, a copper alloy or the like can be used as the brazing material powder. It goes without saying that materials are acceptable.
FIG. 4D is a process diagram in which the polycrystalline CVD diamond chip 14 is brazed to the recess 13 of the holder 12 by heating, and the chip bonding layer 18 covers the outer peripheral surface and the bottom surface of the polycrystalline CVD diamond chip 14 and forms the recess 13. Tightly joined.

FIG. 5 is an explanatory diagram of a process for manufacturing a contact gauge by forming a measuring surface by polishing a growth start surface of a polycrystalline CVD diamond chip together with a holder in the present invention. The contact gauge 1 of the present invention is formed according to the following procedures (5A) to (5D).
(5A) is a process diagram in which the measuring element 10 is formed by cutting the holder 12 along the solid line A and polishing the growth start surface 21 of the polycrystalline CVD diamond tip 14 until the alternate long and short dash line B is reached.
(5B) is a schematic diagram of the completed probe 10. The measuring element 10 includes a holder 12 and a polished polycrystalline CVD diamond chip 14 which is firmly bonded to a recess 13 of the holder 12 by a chip bonding layer 18.
FIG. 5C is a process diagram for fitting the probe 10 into the fitting hole 4 of the arm tip 3. The arm tip 3 is the tip of the arm 2 of the contact gauge 1, and it goes without saying that the shapes of the contact gauge 1, the arm 2 and the arm tip 3 are different for each type of contact gauge.
(5D) is a process diagram in which the contact gauge 1 is completed by joining the measuring element 10 to the fitting hole 4 by the measuring element bonding layer 6 by brazing. The measurement surface 16 protrudes from the plane of the contact gauge 1, and the vertex of the measurement surface 16 is a measurement surface top 17, and the measurement surface top 17 is brought into contact with the measurement surface of the object to perform measurement.

[Examples 1 to 6: Various polycrystalline CVD diamond chips]
According to FIGS. 4 and 5, six types of polycrystalline CVD diamond chips 14 were prepared, and the arithmetic average roughness Ra (μm) and ten-point average roughness Rz (μm) in the vicinity of each measurement surface top 17 were measured. . Six kinds of polycrystalline CVD diamond chips 14 were set as Examples 1 to 6, and the average (X), the overall standard deviation (s), and the 95% confidence interval (X ± 2 s) were calculated. These results were compared with each other as an example of a single crystal diamond.

The arithmetic average roughness Ra of Examples 1 to 6 was distributed from 0.0498 (μm) to 0.0943 (μm), and the average value X was X = 0.0698 (μm). The standard deviation s giving the variation was s = 0.172 (μm). The 95% confidence interval IT of the variation is calculated by 2 × s, and since 2s = 0.0344 (μm), it is found that IT = X ± 2s = 0.0698 ± 0.0344 (μm). It was.
The ten-point average roughness Rz was distributed in the range of 0.274 (μm) to 0.526 (μm), and the average value X was X = 0.389 (μm). The standard deviation s giving the variation was s = 0.094 (μm). The 95% confidence interval IT of the variation is calculated by 2 × s, and since 2s = 0.188 (μm), IT = X ± 2s = 0.389 ± 0.188 (μm) (μm) is given. I understood that.
On the other hand, as a comparative example, an example of a single crystal diamond was polished by the same method as the polycrystalline CVD diamond of the present invention and measured to find Ra = 0.3731 (μm), Rz = 1.858 (μm). was gotten.
The arithmetic average roughness Ra and the ten-point average roughness Rz of the polycrystalline CVD diamond tip of the present invention correspond to about 1/5 of the respective measured values of the single crystal diamond. It was found that the surface roughness was much smaller than that of using and the remarkably improved high definition.

[Comparison: Crush toughness, 20 ° C thermal conductivity, and 200 ° C thermal conductivity]
As the physical quantities different from the surface roughness, the polycrystalline CVD diamond tip according to the present invention is used for crush toughness (MPam ^1/2 ), 20 ° C. thermal conductivity (W / mK), and 200 ° C. thermal conductivity (W / mK). The values of conventional single crystal diamond were compared.

The fracture toughness of the polycrystalline CVD diamond tip according to the present invention is 2.5 times that of conventional single crystal diamond, and it has been found that the durability is remarkably improved. On the other hand, for 20 ° C. thermal conductivity and 200 ° C. thermal conductivity, the polycrystalline CVD diamond tip according to the present invention has almost the same performance as conventional single crystal diamond, and the object to be measured is in a rotating state. Even in this case, it has been found that when the top of the measurement surface is brought into contact with the measurement surface of the object, heat conduction of the generated heat is efficiently performed.
Therefore, it has been proved that the polycrystalline CVD diamond tip of the present invention is far superior to the conventional single crystal diamond in terms of overall characteristics.

FIG. 6 shows a process using a contact gauge device having a pair of contact gauges according to the present invention, where the inner peripheral surface of the object is processed by the processing device until the target value is reached while measuring the diameter of the inner peripheral surface of the object. It is a schematic block diagram of the process measurement part of the process measurement apparatus to perform.
The machining measurement unit MMP means a part in which the computer apparatus C is omitted from the machining measurement apparatus MMA. The machining measurement unit MMP includes a contact gauge device G, an object W to be machined and a machining device MT.
The contact gauge device G is arranged such that a pair of contact gauges 1 and 1 are connected to arms 30 and 30 so that their measurement surface tops 17 and 17 face in opposite directions, and the arms 30 and 30 are contact gauge driving mechanisms. 32 is drivably connected. The contact gauge drive mechanism 32 controls the arms 30 and 30 so that the arms 30 and 30 can be expanded and contracted horizontally. In the state shown in the figure, the contact gauges 1 and 1 measure the diameter of the inner peripheral surface 40 of the object W, that is, a contact gauge device set. It is in the state of. When the arms 30 and 30 are shortened in the left direction, the contact gauges 1 and 1 are detached from the inner peripheral surface 40, and the state shifts to the contact gauge device reset state.

  In this example, the object W is a material that is polished until the diameter reaches a target value by polishing the inner peripheral surface 40, and is rotated slowly in the direction of arrow D. In this example, the processing device MT is composed of a grindstone 50 and is rotated in the direction of arrow C at a high speed. When the grindstone 50 is inserted so as to come into contact with the inner peripheral surface 40, the contact gauge 1 is reset and polishing proceeds, and when the grindstone 50 is detached from the inner peripheral surface 40, the contact gauge 1 is set and measurement is performed. . Polishing and measurement proceed alternately until the diameter of the inner peripheral surface 40 reaches the target value, and when the target value is reached, the polishing and measurement are terminated.

  The pair of contact gauges 1 and 1 may be arranged so that the measurement surface tops 17 and 17 face each other inward, and at this time, the outer peripheral surface of the object W can be polished while being measured. Further, when grinding the inner peripheral surface 40, a cutting tool is selected as the processing device MT, and when the object W is a flat surface, a milling machine is used as the processing device MT for surface grinding. There is.

FIG. 7 is a block diagram of the machining measurement apparatus according to the present invention. The machining measurement apparatus MMA according to the present invention includes a machining measurement unit MMP and a control computer apparatus C. As described above, the processing measurement unit MMP includes the contact gauge device G, the object W, and the processing device MT. On the other hand, the computer device C includes a central processing unit CPU, an input device I, an output device O, and a memory M. Temporary data is stored in a random access memory RAM so as to be input / output. A machining measurement control program is a read-only memory. It is stored in the ROM so that it can be output.
In accordance with each step of the machining measurement control program, the CPU inputs / outputs a signal to / from the machining measurement unit MMP, sets and resets the contact gauge device G, turns on and off the machining device MT, and turns on the drive of the object W. And do off.

FIG. 8 is a flowchart of a machining control program of a machining measurement apparatus that performs machining using a machining apparatus without driving an object while measuring with the contact gauge apparatus according to the present invention.
In step S1, it is determined whether or not the object W is placed at a predetermined location, that is, whether or not the object W is set. If it is set, it is determined whether or not the processing may be executed in step S2. In step S3, the processing device MT is turned on (driven). In step S4, it is determined whether or not the processing time during which the processing device MT is continuously operated has elapsed. If the processing time has elapsed, the processing device MT is turned off (stopped) in step S5, and the contact gauge is determined in step S6. Device G is set. Based on the measurement of the contact gauge device G, it is determined whether or not the processing has reached the target value in step S7. If the target value has not yet been reached, the contact gauge device is reset in step S8 and processed in step S3. The device MT is turned on.
Processing and measurement are alternately performed by repeating Step S3 to Step S8, and when the processing reaches the target value in Step S7, the contact gauge device G is reset in Step S9, and the object is processed in Step S10. W is discharged from the processing position.

FIG. 9 is a flowchart of a machining control program of a machining measurement apparatus that drives an object while machining with the machining apparatus while measuring with the contact gauge device according to the present invention.
In step T1, it is determined whether or not the object W is placed, that is, set in a predetermined location. If it is set, it is determined whether or not the processing may be executed in step T2. In step T3, the drive of the object W is first turned on, and the object W enters a predetermined drive state, and the processing device MT is turned on (driven) in step T4. In step T5, it is determined whether or not the machining time during which the machining device MT is continuously operated has elapsed. If the machining time has elapsed, the machining device MT is turned off (stopped) in step T6, and the contact gauge is measured in step T7. Device G is set. The measurement of the contact gauge device G determines whether or not the machining has reached the target value in step T8. If the target value has not yet been reached, the contact gauge device is reset in step T9 and processed in step T4. The device MT is turned on.
Processing and measurement are alternately performed by repeating Step T4 to Step T9, and when the processing reaches the target value in Step T8, the driving of the object W is turned off in Step T10 and the object W is turned off. The contact gauge device G is reset at step T11, and the object W is discharged from the processing position at step T12.

  The present invention is not limited to the above-described embodiments and examples, and includes various modifications and design changes within the technical scope without departing from the technical idea of the present invention. Needless to say.

  As described above in detail, the present invention uses a polycrystalline CVD diamond as a material for the measuring element, and uses the fact that the crystal grain size of the polycrystalline CVD diamond is extremely small to make the top of the measuring element formed by polishing. Successful development of a probe that can set the arithmetic surface roughness Ra to 0.1 (μm) or less and the ten-point average roughness Rz to 0.5 (μm) or less, and contacts using this probe Realized to provide a gauge. Moreover, the processing measuring apparatus using this contact gauge is completed. Therefore, it contributes to the development of the industry by providing new technologies to the contact gauge industry and the processing measurement industry.

DESCRIPTION OF SYMBOLS 1 Contact gauge 2 Arm 3 Arm front-end | tip 4 Fitting hole 6 Measuring element joining layer 7 Connecting hole 10 Measuring element 12 Holder 13 Concave part 14 Polycrystalline CVD diamond tip 16 Measuring surface 17 Measuring surface top 18 Chip joining layer 20 Polycrystalline CVD diamond DESCRIPTION OF SYMBOLS 21 Growth start surface 22 Growth surface 23 Crystallite 24 Material 26 Substrate 27 Substrate surface 28 Polishing surface 29 Area within 10 μm 30 Arm 31 Brazing material powder 32 Contact gauge drive mechanism 40 Inner peripheral surface 50 Grinding stone 101 Measuring element 102 Tip member 102a Carbide Alloy layer 102b Artificial diamond layer 103 Base member C Computer device CPU Central processing unit G Contact gauge device I Input device M Memory MMA Work measuring device MMP Work measuring unit MMP Work measuring unit MT Working device O Output device ROM Read only Li RAM random access memory W object

Claims (6)

A measuring element of a contact gauge used for measuring an object, wherein a measuring surface for measuring the object is composed of a measuring surface of a polycrystalline CVD diamond tip. The arithmetic average roughness Ra of the measurement surface top contacting the object in the measurement surface is 0.1 (μm) or less, and the ten-point average roughness Rz is 0.5 (μm) or less. The measuring element according to 1. The substrate and the substrate surface are grown as a growth start surface by CVD, and the raw material is polycrystalline CVD diamond whose outermost surface is the growth surface. The grain size of the crystallites constituting the polycrystalline CVD diamond starts to grow. A polycrystalline CVD diamond is separated from the substrate, the polycrystalline CVD diamond chip is cut from the polycrystalline CVD diamond, and the polycrystalline CVD diamond chip is separated from the substrate. The measuring element according to claim 1, wherein the polycrystalline CVD diamond tip is configured such that polishing is performed from a growth start surface and a final polished surface becomes the measurement surface. The measuring element according to claim 3, wherein the measuring surface top of the measuring surface is arranged in a region where the crystallite grain size is 20 μm or less. It is comprised from the measuring element in any one of Claims 1-4, and the arm which fixed the said measuring element to the arm front-end | tip part, and the measuring surface of the said polycrystalline CVD diamond chip protrudes in the said measuring element. Contact gauge characterized by. One or more contact gauges according to claim 5, and a contact gauge device for measuring on the measurement surface of the polycrystalline CVD diamond chip;
An object to be processed into a predetermined shape while being measured by the contact gauge device;
A processing apparatus for processing the object into a predetermined shape;
A computer device for controlling processing by the processing device and measurement by the contact gauge device;
The computer apparatus incorporates a machining measurement control program for controlling machining and measurement.

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