JP2015211064A - Epitaxial growth device contamination evaluation method and epitaxial wafer manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method with which the degree of contamination of an epitaxial growth device can be detected with high sensitivity in a simple manner.SOLUTION: By increasing the flow rate of a replacement gas introduced into transfer chambers 21, 22 constituting a wafer transfer system 2 compared to when a product is manufactured, mixing of an atmosphere gas into a reacting furnace 3 from the wafer transfer system 2 is accelerated compared to when a product is manufactured. In the reacting furnace 3 in which mixing of the atmosphere gas is accelerated, a sample wafer (a first wafer) is manufactured by vapor-growing an epitaxial layer on the surface of a silicone wafer. The metal concentration value in the first wafer is measured. By making the mixing of the atmosphere gas from the wafer transfer system 2 to the reaction furnace 3 equal to when the product is manufactured, a sample wafer (second wafer) is manufactured in the reacting furnace 3 and the metal concentration value of the second wafer is measured. The degree of contamination of an epitaxial growth device 1 is evaluated on the basis of a comparison between the metal concentration value of the first wafer and the metal concentration value of the second wafer.

Description

  The present invention relates to a method for detecting contamination due to metal impurities in an epitaxial growth apparatus and a method for manufacturing an epitaxial wafer using an epitaxial growth apparatus in which the degree of contamination due to metal impurities is controlled by applying the method.

  In recent years, a silicon epitaxial wafer obtained by epitaxially growing a silicon film on a silicon wafer (vapor phase growth) has been used as a substrate for an image sensor such as a CCD or CIS. In such an epitaxial wafer for an image sensor, it is important to reduce the level of metal impurities in the wafer. This is because if a metal impurity is present in the wafer, a defect called white scratch (white spot) occurs.

  In general, in order to manufacture an epitaxial wafer, an epitaxial layer is vapor-phase grown at a high temperature. Therefore, when the epitaxial layer is formed, if metal impurities are present in the reactor of the vapor phase growth apparatus, the manufactured epitaxial wafer is contaminated by the metal impurities. Examples of the contamination sources of these metals include, in addition to silicon crystals and silicon-containing compounds used as raw materials, metal impurities attached during the maintenance (cleaning) of the epitaxial growth apparatus, metal impurities contained in the material constituting the reactor, apparatus, and The stainless steel component etc. which are usually used for a piping system can be considered.

  In addition, the epitaxial growth apparatus needs to be regularly maintained. In the maintenance, for example, the epitaxial growth apparatus is opened to the atmosphere, and the reactor and piping are cleaned. Further, when the production of the epitaxial wafer is repeated, silicon deposits are gradually deposited in the reaction furnace, and the deposits cause generation of particles and the like. Therefore, it is necessary to periodically remove the silicon deposits accumulated in the reaction furnace (cleaning in the furnace). As a method for removing the silicon deposit, a method is known in which HCl gas is flowed into a reaction furnace and vapor etching is performed in the reaction furnace with the HCl gas (see, for example, Patent Document 1).

  Further, in relation to the evaluation of the degree of contamination of the epitaxial growth apparatus, Patent Document 2 discloses a method for evaluating the cleanliness of members in a reduced pressure processing chamber for processing a substrate to be processed (wafer).

JP 2004-87920 A JP 2005-101539 A

  By the way, immediately after the maintenance of the epitaxial growth apparatus and the vapor etching, the degree of contamination of the epitaxial growth apparatus is temporarily deteriorated. It has also been found that contamination of the epitaxial wafer with metal impurities is also exacerbated by the presence of a small amount of oxygen in the reactor. In the maintenance of the epitaxial growth apparatus, there is a case where not only a reaction furnace in which epitaxial growth is performed but also an operation that involves opening the wafer transfer system (transfer chamber) associated with the reaction furnace to the atmosphere. In this case, there is a possibility that the atmosphere (particularly oxygen) remains in the wafer transfer system, and there is a concern about contamination of the epitaxial wafer with metal impurities.

  As a countermeasure against air contamination, it is possible to manage with an oxygen concentration meter that measures the oxygen concentration in the epitaxial growth device, but if there are many instruments for detecting a small amount of oxygen concentration or there are many target devices, the cost will be high and deployment It is difficult. Moreover, it becomes management only with respect to oxygen concentration, and when there is another contamination source, it cannot be detected.

  The present invention has been made in view of the above problems, and it is an object of the present invention to provide a method capable of detecting the degree of contamination of the entire epitaxial growth apparatus with high sensitivity and ease and a method capable of producing a high-quality epitaxial wafer with little contamination. To do.

  The inventor has found that the metal contamination of the epitaxial wafer in the reactor is corroded by the inclusion of process gas such as hydrogen chloride (HCl) in the reactor and air from the wafer transport system or another source of contamination. I thought it was caused. Therefore, if air or another source of contamination remains in the wafer transfer system, the metal impurity concentration of the epitaxial wafer is amplified by intentionally increasing the amount of atmospheric gas mixed from the wafer transfer system into the reactor. The headline, the present invention has been reached.

That is, the contamination evaluation method of the epitaxial growth apparatus of the present invention, the mixing promotion step of promoting the mixing of the atmospheric gas from the wafer transfer system to the reaction furnace than at the time of manufacturing the epitaxial wafer as a product,
A first sample manufacturing step of manufacturing a sample wafer by vapor-phase-growing an epitaxial layer on the wafer in the reaction furnace in which the mixing of the atmospheric gas is promoted by the mixing promotion step;
A first acquisition step of acquiring a degree of contamination by metal impurities of the first wafer which is a sample wafer manufactured in the first sample manufacturing step;
Based on the contamination level acquired in the first acquisition step, an evaluation step for evaluating the contamination level due to metal impurities of the epitaxial growth apparatus including the wafer transfer system and the reaction furnace;
It is characterized by providing.

  According to the present invention, since the sample wafer is manufactured in a state where contamination of the contamination source (mixture of atmospheric gas) from the wafer conveyance system to the reaction furnace is promoted, it is affected by the residual contamination source in the wafer conveyance system from the time of product manufacture. A sample wafer can be obtained. As a result, when there are many residual contamination sources in the wafer transport system, the amount of metal contamination taken into the epitaxial layer can be amplified compared to the method of growing the epitaxial layer under the same conditions as the product manufacturing and manufacturing the sample wafer. Can do. In the evaluation process, the contamination degree of the epitaxial growth apparatus due to the metal impurities is evaluated based on the contamination degree of the metal impurities of the sample wafer (first wafer), so that the contamination source from the wafer transfer system to the reaction furnace is considered. The contamination degree of the entire epitaxial growth apparatus can be detected with high sensitivity and ease.

In the present invention, the atmospheric gas from the wafer conveyance system to the reaction furnace is mixed in the same manner as in the production of an epitaxial wafer as a product, and an epitaxial layer is vapor-phase grown on the wafer in the reaction furnace. A second sample manufacturing process for manufacturing a sample wafer;
A second acquisition step of acquiring the degree of contamination by metal impurities of the second wafer, which is a sample wafer manufactured in the second sample manufacturing step,
In the evaluation step, based on a comparison between the contamination level of the second wafer and the contamination level of the first wafer, the contamination level due to metal impurities caused by the wafer transfer system of the epitaxial growth apparatus is evaluated.

  As described above, the sample wafer (second wafer) manufactured under the same conditions as the product manufacturing, and the sample wafer (first wafer) manufactured in a state where the mixing of the atmospheric gas from the wafer transfer system is promoted more than the product manufacturing. The degree of contamination caused by the wafer transfer system of the epitaxial growth apparatus can be detected with high sensitivity and ease.

  In the evaluation step of the present invention, the degree of increase in the contamination level of the first wafer from the contamination level of the second wafer is evaluated as the contamination level due to metal impurities caused by the wafer transfer system of the epitaxial growth apparatus. be able to. Thereby, the contamination degree by the metal impurity resulting from the wafer conveyance system of an epitaxial growth apparatus can be obtained simply.

  In the present invention, the pressure in the wafer transfer system is adjusted to be larger than the pressure in the reaction furnace, and in the mixing promotion step, the pressure difference between the wafer transfer system and the reaction furnace. Is made larger than that at the time of manufacturing an epitaxial wafer as a product. In this way, by increasing the pressure difference between the inside of the wafer transfer system and the reaction furnace than when manufacturing the product, it is possible to easily promote the mixing of the atmospheric gas from the wafer transfer system to the reaction furnace.

The wafer transfer system according to the present invention includes a transfer chamber in which an atmosphere gas is replaced by an inert gas when a transferred wafer is introduced, and the reaction furnace is provided between the transfer chamber and the reaction furnace. An isolation valve that can be opened and closed to isolate the transfer chamber from the transfer chamber, and after replacing the atmosphere gas in the transfer chamber with the isolation valve closed, the isolation valve is opened and the transfer chamber is removed from the transfer chamber. Wafer transfer to the reaction furnace or wafer transfer from the reaction furnace to the transfer chamber is performed,
In the mixing promotion step, the flow rate of the inert gas in the transfer chamber is increased as compared with the production of the epitaxial wafer as a product.

  Thus, by increasing the flow rate of the inert gas in the transfer chamber as compared with the time of product manufacture, the pressure difference between the wafer transfer system and the reactor can be easily increased. Mixing of atmospheric gas into the reaction furnace can be facilitated.

  In the present invention, in the first acquisition step, the metal quantitative analysis by ICP-MS is performed on the first wafer, and the result of the metal quantitative analysis is acquired as the contamination degree of the metal impurity of the first wafer. In the second acquisition step, the metal quantitative analysis by ICP-MS is performed on the second wafer, and the result of the metal quantitative analysis is acquired as the contamination degree of the metal impurities of the second wafer. Thereby, a value correlated with the contamination degree (contamination degree of the epitaxial growth apparatus) of the sample wafer (first wafer, second wafer) can be obtained easily and with high sensitivity.

  The epitaxial wafer manufacturing method of the present invention is characterized in that an epitaxial wafer is manufactured using an epitaxial growth apparatus in which the degree of contamination evaluated by the contamination evaluation method of the epitaxial growth apparatus of the present invention falls below a reference value. As a result, a high-quality epitaxial wafer with little contamination can be manufactured with a high yield.

It is a side cross-sectional schematic diagram of the whole epitaxial growth apparatus. It is the flowchart which showed an example of the outline of the contamination detection method of an epitaxial growth apparatus. It is the flowchart which showed the procedure which obtains the metal concentration value of the sample wafer (2nd wafer) of a comparative example. It is the figure which showed the surface Mo density | concentration ratio in an Example and a comparative example.

  Next, details of a method for evaluating the degree of contamination of the epitaxial growth apparatus of the present invention will be described. FIG. 1 shows a schematic side sectional view of a general single-wafer type epitaxial growth apparatus which is a preferred example of an epitaxial growth apparatus (vapor phase growth apparatus) to be evaluated for the degree of contamination. An epitaxial growth apparatus 1 in FIG. 1 is an apparatus (an apparatus for producing a silicon epitaxial wafer) that vapor-phase grows (epitaxial growth) a silicon single crystal film on the surface of a silicon wafer. In the epitaxial growth apparatus 1, an epitaxial wafer used for an image sensor substrate such as a CCD or CIS is manufactured.

  The epitaxial growth apparatus 1 includes a reaction furnace 3 (hereinafter referred to as an epi reaction furnace) for performing epitaxial growth. The epi reactor 3 is made of SUS, quartz member, or the like. A susceptor 31 for placing the charged silicon wafer is disposed inside the epi reactor 3. In addition, a heater 4 for heating the silicon wafer to a predetermined reaction temperature during epitaxial growth is disposed around the epi reaction furnace 3.

  The epi reactor 3 includes a reaction gas (specifically, a silane-based gas such as trichlorosilane (TCS)) used as a raw material for a silicon single crystal thin film during epitaxial growth, and a carrier gas (for example, hydrogen) for diluting the reaction gas. ), And a gas introduction pipe 32 for introducing a vapor phase growth gas containing a dopant gas (for example, a gas containing boron or phosphorus) that imparts conductivity type to the thin film into the epi-reactor 3 is connected. At the time of cleaning the epi reactor 3, hydrogen chloride gas (HCl gas) is introduced from the gas introduction pipe 32 instead of the vapor phase growth gas, and the epi reactor 3 is cleaned by the hydrogen chloride gas. (Vapor etching) is performed. The epireactor 3 is connected to a gas discharge pipe 33 for discharging gas (gas after the epitaxial reaction) from the epireactor 3.

  The epitaxial growth apparatus 1 includes a wafer transfer system 2 for transferring (transferring) a silicon wafer into an epi reaction furnace 3. The epitaxial growth apparatus 1 also includes a wafer transfer system for carrying out (transferring) a wafer (silicon epitaxial wafer) after epitaxial growth from the epi-reactor 3. The unloading wafer transfer system may be used also as the carry-in wafer transfer system 2 or may be provided separately from the wafer transfer system 2.

  The wafer transfer system 2 is provided in the front stage of the epi reaction furnace 3. The wafer transfer system 2 includes a first transfer chamber 21 (load-in chamber) and a second transfer chamber 22 provided between the first transfer chamber 21 and the epi reaction furnace 3. These transfer chambers 21 and 22 are chambers for temporarily waiting for a silicon wafer before being put into the epi-reactor 3.

  Isolation valves 23 to 25 that can be opened and closed for isolating the inside of the transfer chambers 21 and 22 from the outside are provided at the entrances and exits of the transfer chambers 21 and 22, respectively. That is, a first isolation valve 23 is provided at the inlet of the first transfer chamber 21. A second isolation valve 24 is provided at the outlet of the first transfer chamber 21 (which is also the inlet of the second transfer chamber 22). In addition, a third isolation valve 25 is provided at the outlet of the second transfer chamber 22 (which is also the inlet of the epi reactor 3).

  Further, a gas introduction pipe 26 for introducing an inert gas such as nitrogen into the first transfer chamber 21 and a gas discharge pipe 27 for discharging the gas from the first transfer chamber 21 are connected to the first transfer chamber 21. Has been. Similarly, the second transfer chamber 22 includes a gas introduction pipe 28 for introducing an inert gas such as nitrogen into the second transfer chamber 22 and a gas discharge pipe 29 for discharging the gas from the second transfer chamber 22. It is connected.

  A procedure for manufacturing an epitaxial wafer using the epitaxial growth apparatus 1 will be described. First, a silicon wafer is carried into the first transfer chamber 1 through the first isolation valve 23 between the atmosphere and the transfer chamber. Thereafter, after the first isolation valve 23 is closed, the atmosphere in the first transfer chamber 21 is replaced with an inert gas, here nitrogen, in order to prevent air from entering the epireactor 3. This atmosphere replacement is performed by introducing a predetermined flow rate of nitrogen through the gas introduction pipe 26 and discharging the gas including the atmosphere through the gas discharge pipe 27.

  When the replacement for a certain time is completed, the second isolation valve 24 is opened and the silicon wafer is transferred to the second transfer chamber 22. The second transfer chamber 22 is always replaced with nitrogen gas by gas introduction through the gas introduction pipe 28 and gas discharge through the gas discharge pipe 29. In addition, the inside of the second transfer chamber 22 and the atmosphere are not in direct contact except for maintenance.

  In addition, the pressure in the transfer chambers 21 and 22 is set to be higher than the pressure in the epi reaction furnace 3 in order to prevent the backflow of the reactive gas from the epi reaction furnace 3. Therefore, when the silicon wafer is transferred to the epi reaction furnace 3, the atmospheric gas in the transfer chambers 21 and 22 flows into the epi reaction furnace 3.

  After the silicon wafer is transferred to the second transfer chamber 22, when the second isolation valve 24 is closed, the third isolation valve 25 is opened and the silicon wafer is transferred to the epi reactor 3. Then, an epitaxial reaction process is performed in the epi reaction furnace 3. As for the epi-reactor 3 as well, the inside of the epi-reactor 3 and the atmosphere are not in direct contact except for maintenance.

  In the epitaxial reaction process, the silicon wafer transported to the epi reaction furnace 3 is placed on the susceptor 31. At this time, hydrogen is introduced into the epi-reaction furnace 3 through the gas introduction pipe 32 from the stage before introducing the silicon wafer. Next, the silicon wafer on the susceptor 31 is heated by the heater 4 to a heat treatment temperature (for example, 1050 to 1200 ° C.). Next, vapor phase etching is performed to remove the natural oxide film formed on the surface of the silicon wafer. Note that this vapor phase etching is performed until immediately before the vapor phase growth which is the next step. Next, the silicon wafer is adjusted to a desired reaction temperature (for example, 1050 to 1180 ° C.), and a gas for vapor deposition is introduced from the gas introduction pipe 32, whereby a silicon single crystal thin film is vapor-phased on the surface of the silicon wafer. A silicon epitaxial wafer is grown. Finally, after removing the epi reactor 3 and lowering the temperature to the temperature, the silicon epitaxial wafer is carried out of the epi reactor 3. When the silicon epitaxial wafer is unloaded from the epi-reactor 3, in order to prevent air from entering the epi-reactor 3, the unloading wafer transfer system is replaced with an inert gas such as nitrogen. Yes.

  At the time of carrying in the silicon wafer and at the time of maintenance with opening to the atmosphere, there is a possibility that air or another contamination source may be brought into the chambers 21 and 22 from the outside. May occur. Since devices such as an image sensor are very strongly affected by metal impurities in the epitaxial layer, it is necessary to detect contamination of the entire epitaxial growth apparatus 1 including the wafer transfer system 2 (transfer chambers 21 and 22) with high sensitivity. For that purpose, the contamination detection method of the present invention is carried out.

  Next, the detail of the contamination detection method of the epitaxial growth apparatus 1 of this invention is demonstrated. FIG. 2 is a flowchart showing an example of the outline of the method. The contamination evaluation method in this figure may be performed at any time, but is performed immediately after maintenance or vapor etching (in-furnace cleaning) in which the contamination level deteriorates, for example. First, a silicon wafer serving as a substrate for a semiconductor wafer for contamination evaluation is prepared (S11). The diameter, surface orientation, conductivity type, resistivity, etc. of the silicon wafer prepared here are not particularly limited. For example, the diameter is a silicon wafer processed by the epitaxial growth apparatus 1 to be evaluated (silicon wafer at the time of product manufacture). Can be the same. Further, the processing conditions of the surface of the silicon wafer may be standard conditions, but it is preferable to avoid processes that affect the contamination evaluation, such as sandblasting and formation of a polycrystalline silicon film.

  In order to implement the present invention, it is necessary to increase (promote) the mixing of atmospheric gas from the transfer chambers 21 and 22 into the epi reactor 3 from the time of product manufacture. The method is not limited as long as it is a method for increasing the amount of atmospheric gas mixed. For example, as one method of increasing the amount of atmospheric gas mixed, the replacement gas flow rate (the flow rate of gas introduced from the gas introduction pipes 26 and 28) of the transfer chambers 21 and 22 is increased by a predetermined amount (S12). This “predetermined amount” may be any value, but the larger the value, the more the atmospheric gas can be mixed from the transfer chambers 21 and 22 into the epireactor 3. By increasing the flow rate of the replacement gas as compared with that at the time of product manufacture, the pressure difference between the transfer chambers 21 and 22 and the epi-reactor 3 can be increased, and the amount of atmospheric gas mixed can be increased. In this method, the gas mixing amount can be changed arbitrarily and simply by changing the set flow rate. In addition, there is a method of increasing the pressure in the transfer chambers 21 and 22 by installing a resistor in the exhaust lines (gas exhaust pipes 27 and 28) of the transfer chambers 21 and 22.

  In S12, the replacement gas flow rate may be increased only in the first transfer chamber 21, the replacement gas flow rate may be increased only in the second transfer chamber 22, or the replacement of both transfer chambers 21 and 22 may be performed. The gas flow rate may be increased. When the replacement gas flow rate is increased only in the first transfer chamber 21, the amount of atmospheric gas mixed from the first transfer chamber 21 to the second transfer chamber 22 increases, and the second transfer chamber is increased with this increase. The amount of atmospheric gas mixed into the epi reactor 3 from 22 increases. Further, when the replacement gas flow rate is increased only in the second transfer chamber 22, the amount of atmospheric gas mixed from the second transfer chamber 22 into the epi reaction furnace 3 increases. The step S12 corresponds to the “mixing promotion step” of the present invention.

  After setting the pressure in the transfer chambers 21 and 22, the prepared silicon wafer is transferred into the epi reactor 3 through the wafer transfer system 2 (S13). Next, a source gas such as TCS and hydrogen, which is a carrier gas, are allowed to flow, and an epitaxial layer is vapor-grown on the surface of the silicon wafer at the same reaction temperature as that for product manufacture. Wafer) is produced (S14). The thickness, conductivity type, resistivity and the like of the epitaxial layer are not particularly limited, but for example, a non-doped epitaxial layer can be grown to a thickness of 1 to 10 μm. Further, the type of the source gas is not particularly limited, but the TCS most widely used as the source gas can be used.

  In S12, the pressure in the transfer chambers 21 and 22 is set higher than that in product manufacture, and the amount of atmospheric gas mixed from the transfer chambers 21 and 22 into the epireactor 3 is increased when the wafer is loaded in S13. It is possible to increase the oxygen concentration in the furnace and the amount of contamination from other contamination sources at the time of wafer production compared to the production of the product. As a result, metal impurity emission from the contamination source in the epitaxial growth apparatus 1 (particularly, the contamination source of the wafer transfer system 2) can be accelerated. As a result, metal impurities (amount of metal contamination) taken into the epitaxial layer can be amplified.

  Thereafter, the produced sample wafer (first wafer) is unloaded from the epi reactor 3 (S15). The steps S13 to S15 correspond to the “first sample manufacturing step” of the present invention. Then, ICP-MS analysis (inductively coupled plasma mass spectrometry) of this sample wafer is performed as the metal contamination degree of the sample wafer carried out (S16). By performing ICP-MS analysis, quantitative analysis of the metal concentration in the sample wafer becomes possible. The metal concentration value obtained by this analysis corresponds to the degree of contamination of the epitaxial growth apparatus 1. In S16, the ICP-MS analysis may be performed by paying attention to any kind of metal impurities such as Mo, Fe, Cu, and Ni. For example, when ICP-MS analysis is performed focusing on Mo, the Mo concentration can be obtained. The process of S16 corresponds to the “first acquisition process” of the present invention.

  Next, based on the metal concentration value obtained from the analysis, the contamination degree (cleanliness) of the epitaxial growth apparatus 1 to be evaluated is evaluated (S17). Specifically, for example, a sample wafer (second wafer) produced at a transfer gas flow rate in the transfer chambers 21 and 22 at the same flow rate as that at the time of product manufacture, and a sample wafer (first wafer) produced under conditions increased from the time of product manufacture. ) To evaluate the influence of contamination brought in from the transfer chambers 21 and 22. Therefore, for example, the second wafer is manufactured and the metal concentration value of the second wafer is measured by the procedure shown in the flowchart of FIG. The flowchart of FIG. 3 may be executed in advance before the execution of the flowchart of FIG. 2 or may be executed after the execution of S16 in the flowchart of FIG.

  In the flowchart of FIG. 3, steps S21 and S23 to S26 other than S22 are the same as S11 and S13 to S16 of FIG. That is, first, a silicon wafer of the same type (diameter, plane orientation, conductivity type, resistivity, etc.) as the silicon wafer prepared in S11 is prepared (S21). Next, by setting the replacement gas flow rate in the transfer chambers 21 and 22 to the same flow rate as that at the time of product manufacture, the pressure in the transfer chambers 21 and 22 is set to the same pressure as at the time of product manufacture (S22). Next, the silicon wafer is carried into the epi reaction furnace 3 through the wafer transfer system 2 (S23), an epitaxial layer is grown on the surface of the silicon wafer in the epi reaction furnace 3, and a semiconductor wafer for contamination evaluation ( A sample wafer and a second wafer are prepared (S24). The growth conditions at this time are the same as the growth conditions in S14. Then, the produced sample wafer is carried out (S25), and ICP-MS analysis of this sample wafer is performed (S26). The steps S21 to S25 correspond to the “second sample manufacturing step” of the present invention. The process of S26 corresponds to the “second acquisition process” of the present invention.

  2, for example, the ratio of the metal concentration value A of the first wafer obtained in S16 of FIG. 2 to the metal concentration value B of the second wafer obtained in S26 of FIG. 3 (increase ratio = A / B) is calculated as the degree of contamination of the epitaxial growth apparatus 1. This increase ratio is a degree of contamination by metal impurities caused by the wafer transfer system 2 in the epitaxial growth apparatus 1. For example, when the increase ratio (contamination level) exceeds a predetermined reference value, oxygen or oxygen from the wafer transfer system 2 to the epi-reactor 3 is cleaned by cleaning the wafer transfer system 2 or the like. Control the increase ratio below the reference value by reducing the introduction of other pollution sources. The process of S17 corresponds to the “evaluation process” of the present invention.

  The above is the contamination evaluation method for the epitaxial growth apparatus in the present embodiment. As described above, according to the contamination evaluation method of the present embodiment, the amount of atmospheric gas mixed from the transfer chamber is increased during the epitaxial layer growth than during the manufacture of the product, so that the contamination is emphasized due to the influence of residual air in the chamber. As a result, the contamination is amplified, and the degree of contamination (cleanness) that is strongly influenced by the transfer chamber can be evaluated. For example, by using an epitaxial growth apparatus managed so that the increase ratio falls below a reference value, a high-quality epitaxial wafer with less contamination can be manufactured with a high yield.

  EXAMPLES Hereinafter, although an Example and a comparative example are given and this invention is demonstrated further more concretely, these do not limit this invention.

  First, many silicon wafers having a diameter of 200 mm and a thickness of 725 μm were prepared. Next, an epitaxial growth apparatus to be evaluated was prepared, the transfer chamber was opened to the atmosphere, and so-called maintenance work was performed.

  After preparing an epitaxial growth apparatus for which maintenance work was performed in this way, an epitaxial layer was grown on the surface of the silicon wafer by using this apparatus, and a silicon wafer (sample wafer) for contamination evaluation was produced. Here, using the same apparatus, the contamination evaluation silicon wafer (first wafer) based on the procedure of FIG. 2 and the contamination evaluation silicon wafer (second wafer) of the comparative example (conventional method) based on the procedure of FIG. Made with timing. At this time, a source gas TCS of 10 L / min and a carrier gas of hydrogen of 50 L / min were flowed at the time of forming the epitaxial layer, thereby producing a 10 μm thick non-doped layer.

(Comparative example)
In the comparative example, both the nitrogen gas flow rate introduced into the transfer chambers 21 and 22 (see FIG. 1) is set to 4.5 L / min, which is the same nitrogen gas flow rate as in the prior art (during manufacture), and a silicon wafer for contamination evaluation (Second wafer) was produced.

(Example)
In this embodiment, the nitrogen gas flow rates introduced into the transfer chambers 21 and 22 are both set to 6.5 L / min and 9.6 L / min so that the amount of gas mixed into the epi-reactor increases. A silicon wafer for evaluation (first wafer) was produced.

  About the silicon wafer for contamination evaluation produced in this way, surface Mo density | concentration was measured using ICP-MS method. FIG. 4 is a diagram showing the measurement results, and specifically shows the increase ratio of the surface Mo concentration of the silicon wafer in the example when the surface Mo concentration of the comparative example is 1.

  From the comparison of the surface Mo concentration of the silicon wafer immediately after the maintenance of the comparative example and the example, it can be seen that the Mo concentration ratio increases as the replacement gas flow rate in the transfer chamber increases. That is, the Mo concentration ratio when the nitrogen gas flow rate is 6.5 L / min is larger than the concentration ratio (= 1) of the comparative example. Further, the Mo concentration ratio at 9.6 L / min is larger than the Mo concentration ratio at 6.5 L / min. From this, it can be said that the contamination source remains in the wafer transfer system (transfer chamber).

  As described above, by using the present invention, it was possible to confirm the contamination source remaining in the transfer chamber after maintenance. This indicates that the detection of contamination with high sensitivity became possible by increasing the amount of contamination sources in other chambers by using the embodiment, which could not be detected only by the comparative example.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention. For example, the epitaxial growth apparatus to be evaluated for the degree of contamination is not limited to a single wafer type, and the present invention can be applied to contamination evaluation of various epitaxial growth apparatuses having an auxiliary chamber in addition to the epi reactor. Further, as a method for evaluating the degree of contamination, a method other than ICP-MS (ICP mass spectrometry), specifically, for example, total reflection X-ray fluorescence analysis (TXRF) is used. (Metal impurity concentration) may be measured.

  Further, in the above-described embodiment, the mixing of the atmospheric gas from the transfer chamber to the epi-reactor is promoted by increasing the pressure of the transfer chamber (substitution gas flow rate) compared to the time of product manufacture. The opening time of the isolation valve at the time of transfer to the reaction furnace may be longer than that at the time of product manufacture, or the introduction time of the inert gas to the transfer chamber may be extended. This also facilitates the mixing of atmospheric gas into the epi reactor.

  Moreover, although the said embodiment demonstrated the example which applied this invention to the epitaxial growth apparatus provided with two conveyance chambers, how many conveyance chambers may be provided. Moreover, in the said embodiment, although mixing of the atmospheric gas from the wafer conveyance system (wafer conveyance system for carrying in) for carrying in a wafer into an epi reactor was promoted, in order to carry out a wafer from an epi reactor Mixing of atmospheric gas from the wafer transfer system (wafer transfer system for unloading) may be promoted. According to this, it is possible to evaluate the degree of contamination caused by the wafer transfer system for unloading.

  Moreover, although the example which applied this invention to the manufacturing apparatus of a silicon epitaxial wafer was demonstrated in the said embodiment, you may apply this invention to the manufacturing apparatus of another kind of epitaxial wafer.

  In the process of S17 in FIG. 2, the contamination degree of the epitaxial growth apparatus was evaluated based on the comparison (increase ratio) of the metal concentration value of the first wafer and the metal concentration value of the second wafer. You may evaluate the pollution degree only by a value. Specifically, it is evaluated that the contamination level of the epitaxial growth apparatus is worse as the metal concentration value of the first wafer is larger. According to this, since the process of FIG. 3 can be omitted, contamination of the epitaxial growth apparatus can be more easily evaluated.

  Moreover, in the said embodiment, although the contamination degree of the epitaxial growth apparatus was evaluated based on the increase ratio of the metal concentration value of the 1st wafer and the metal concentration value of the 2nd wafer, the metal concentration value of the 1st wafer and the 2nd wafer's You may evaluate the contamination degree of an epitaxial growth apparatus based on the difference of a metal concentration value.

DESCRIPTION OF SYMBOLS 1 Epitaxial growth apparatus 2 Wafer transfer system 21 1st transfer chamber 22 2nd transfer chamber 23-25 Isolation valve 3 Reactor

Claims (7)

A mixing promotion step that accelerates the mixing of atmospheric gas from the wafer transfer system to the reaction furnace than during the production of the epitaxial wafer to be the product;
A first sample manufacturing step of manufacturing a sample wafer by vapor-phase-growing an epitaxial layer on the wafer in the reaction furnace in which the mixing of the atmospheric gas is promoted by the mixing promotion step;
A first acquisition step of acquiring a degree of contamination by metal impurities of the first wafer which is a sample wafer manufactured in the first sample manufacturing step;
Based on the contamination level acquired in the first acquisition step, an evaluation step for evaluating the contamination level due to metal impurities of the epitaxial growth apparatus including the wafer transfer system and the reaction furnace;
A method for evaluating contamination of an epitaxial growth apparatus, comprising: A sample wafer is manufactured by vapor-phase-growing an epitaxial layer on the wafer in the reaction furnace, with the atmospheric gas mixed from the wafer transfer system into the reaction furnace being the same as when manufacturing an epitaxial wafer as a product. A second sample manufacturing process;
A second acquisition step of acquiring the degree of contamination by metal impurities of the second wafer, which is a sample wafer manufactured in the second sample manufacturing step,
In the evaluation step, based on a comparison between the contamination level of the second wafer and the contamination level of the first wafer, the contamination level due to metal impurities caused by the wafer transfer system of the epitaxial growth apparatus is evaluated. The contamination evaluation method for an epitaxial growth apparatus according to claim 1.   In the evaluation step, the degree of increase in the contamination level of the first wafer from the contamination level of the second wafer is evaluated as a contamination level due to metal impurities caused by the wafer transfer system of the epitaxial growth apparatus, The contamination evaluation method for an epitaxial growth apparatus according to claim 2. The pressure in the wafer transfer system is adjusted to be greater than the pressure in the reactor,
In the said mixing promotion process, the pressure difference between the said wafer conveyance system and the said reaction furnace is made larger than the time of manufacture of the epitaxial wafer used as a product, In any one of Claims 1-3 characterized by the above-mentioned. The contamination evaluation method of the epitaxial growth apparatus as described. The wafer transfer system is provided between a transfer chamber in which an atmosphere gas is replaced by an inert gas when a wafer to be transferred is input, and the transfer furnace is provided between the transfer chamber and the reaction furnace. An isolation valve that can be opened and closed for isolation from the atmosphere, and after replacing the atmospheric gas in the transfer chamber with the isolation valve closed, the isolation valve is opened to transfer the transfer chamber to the reactor. Wafer transfer or wafer transfer from the reactor to the transfer chamber is performed,
5. The contamination evaluation method for an epitaxial growth apparatus according to claim 4, wherein, in the mixing promotion step, the flow rate of the inert gas in the transfer chamber is increased as compared with the production of an epitaxial wafer as a product. In the first acquisition step, the metal quantitative analysis by ICP-MS is performed on the first wafer, and the result of the metal quantitative analysis is acquired as the contamination degree of the metal impurities of the first wafer,
In the second acquisition step, metal quantitative analysis is performed on the second wafer by ICP-MS, and a result of the metal quantitative analysis is acquired as a contamination degree of metal impurities of the second wafer. The contamination evaluation method for an epitaxial growth apparatus according to claim 2.   An epitaxial wafer is manufactured using an epitaxial growth apparatus in which the degree of contamination evaluated by the contamination evaluation method for an epitaxial growth apparatus according to any one of claims 1 to 6 falls below a reference value. .

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