JP2015203606A5 - - Google Patents

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JP2015203606A5
JP2015203606A5 JP2014082310A JP2014082310A JP2015203606A5 JP 2015203606 A5 JP2015203606 A5 JP 2015203606A5 JP 2014082310 A JP2014082310 A JP 2014082310A JP 2014082310 A JP2014082310 A JP 2014082310A JP 2015203606 A5 JP2015203606 A5 JP 2015203606A5
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substrate
sensor
scintillator layer
manufacturing
forming
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JP6333034B2 (en
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本発明の1つの側面は、センサ基板および該センサ基板の上に光を検出するセンサ部を有するセンサパネルの前記センサ部側の面と第2の基板の表面とにシンチレータを蒸着してシンチレータ層を形成する工程と、前記シンチレータ層が形成された前記センサパネルをシンチレータ層が形成された前記第2の基板から分離して放射線撮像装置を取得する工程と、を含み、前記シンチレータ層を形成する工程は、前記センサ基板の側面と前記第2の基板の側面とが接触するかまたは前記シンチレータ層の厚さの2倍以下の間隙をおいて位置するように保持しながら行われることを特徴とする。 One aspect of the present invention includes the sensor portion side surface of the sensor panel having a sensor unit for detecting light on the sensor substrate and the sensor substrate and the surface of the second substrate, the scintillator is deposited Forming a scintillator layer; and separating the sensor panel on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed to obtain a radiation imaging apparatus, the scintillator layer comprising: The forming step is performed while holding the sensor substrate so that the side surface of the sensor substrate and the side surface of the second substrate are in contact with each other or are positioned with a gap of twice or less the thickness of the scintillator layer. Features.

Claims (19)

センサ基板および該センサ基板の上に光を検出するセンサ部を有するセンサパネルの前記センサ部側の面と第2の基板の表面とにシンチレータを蒸着してシンチレータ層を形成する工程と、
前記シンチレータ層が形成された前記センサパネルをシンチレータ層が形成された前記第2の基板から分離して放射線撮像装置を取得する工程と、
を含み、
前記シンチレータ層を形成する工程は、前記センサ基板の側面と前記第2の基板の側面とが接触するかまたは前記シンチレータ層の厚さの2倍以下の間隙をおいて位置するように保持しながら行われることを特徴とする放射線撮像装置の製造方法。
Forming said sensor portion side surface of the sensor panel having a sensor unit for detecting light on the sensor substrate and the sensor substrate, and the surface of the second substrate, a scintillator layer by depositing a scintillator on a
Separating the sensor panel on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed to obtain a radiation imaging apparatus;
Including
In the step of forming the scintillator layer, the side surface of the sensor substrate and the side surface of the second substrate are in contact with each other or are held so as to be positioned with a gap less than twice the thickness of the scintillator layer. The manufacturing method of the radiation imaging device characterized by the above-mentioned.
前記シンチレータ層を形成する工程で、前記センサパネルの前記面と前記第2の基板の前記表面との段差が前記シンチレータ層の厚さよりも小さくなるように前記センサパネルと前記第2の基板とを保持することを特徴とする請求項1に記載の製造方法。   In the step of forming the scintillator layer, the sensor panel and the second substrate are formed such that a step between the surface of the sensor panel and the surface of the second substrate is smaller than a thickness of the scintillator layer. The manufacturing method according to claim 1, wherein the holding method is held. 前記シンチレータ層を形成する工程で、前記センサ基板の前記側面と前記第2の基板の前記側面とが接触するように前記センサ基板と前記第2の基板とを突き当てた状態で前記センサパネルと前記第2の基板とを保持することを特徴とする請求項1または2に記載の製造方法。   In the step of forming the scintillator layer, the sensor panel and the second substrate are in contact with each other so that the side surface of the sensor substrate and the side surface of the second substrate are in contact with each other. The manufacturing method according to claim 1, wherein the second substrate is held. 前記センサ基板と前記第2の基板とを突き当てた状態で、前記センサ基板の前記側面の前記面側の一部が前記第2の基板の前記側面の一部と接触し、前記センサ基板の前記面と反対の側において前記センサ基板の側面の残部と前記第2の基板の前記側面の残部とがテーパー形状の空間を形成し、該空間に前記テーパー形状の部材を配置した状態で前記センサパネルと前記第2の基板とを保持することを特徴とする請求項3に記載の製造方法。 In a state of abutting and said second substrate and said sensor substrate, part of the previous SL side of the side surface of the sensor substrate is in contact with a portion of said side surface of said second substrate, said sensor substrate in a state where the front Symbol surface and the opposite side to the rest of the side surface of the sensor substrate and the remainder of the side surface of the second substrate to form a space tapered and arranged member of the tapered in the space of The manufacturing method according to claim 3, wherein the sensor panel and the second substrate are held. 前記シンチレータ層を形成する工程で、前記センサ基板の前記側面と前記第2の基板の前記側面とが0.1mm以下の間隙をおいて配置され、前記間隙の大きさを規定し前記センサ基板と前記第2の基板とを接続する接続部材を前記間隙に配置した状態で前記センサパネルと前記第2の基板とを保持することを特徴とする請求項1または2に記載の製造方法。   In the step of forming the scintillator layer, the side surface of the sensor substrate and the side surface of the second substrate are arranged with a gap of 0.1 mm or less, defining the size of the gap, and the sensor substrate 3. The manufacturing method according to claim 1, wherein the sensor panel and the second substrate are held in a state in which a connection member that connects the second substrate is disposed in the gap. 4. 前記シンチレータ層を形成する工程で、前記センサパネルの前記面の周縁部と前記第2の基板に前記面側の表面の周縁部とを支持することを特徴とする請求項1ないし5のいずれか1項に記載の製造方法。 The step of forming the scintillator layer, according to claim 1 to 5, characterized in that for supporting the peripheral portion of the surface of the front SL side to the second substrate and the peripheral portion of the front Symbol surface of the sensor panel The manufacturing method of any one of Claims. 前記シンチレータ層を形成する工程で、前記センサパネルの前記面と反対の側の背面における周縁部の一部と前記第2の基板の前記背面側の表面の周縁部の一部を押圧することを特徴とする請求項6に記載の製造方法。 The step of forming the scintillator layer, pressing the part of the peripheral portion of a part and the second of said back side of the surface of the substrate of the peripheral portion in the rear of the front Symbol surface opposite side of the sensor panel The manufacturing method according to claim 6. 前記シンチレータ層を形成する工程で、前記センサパネルの前記面と反対の側の背面と前記第2の基板の前記背面側の表面とを静電チャックによって基台に保持することを特徴とする請求項1ないし3のいずれか1項に記載の製造方法。 The step of forming the scintillator layer, and wherein the holding and the back-side surface of the second substrate before and Symbol surface and the back surface of the opposite side of the sensor panel on the base by the electrostatic chuck The manufacturing method of any one of Claims 1 thru | or 3. 前記シンチレータ層を形成する工程で、前記センサパネルの前記面と反対の側の背面と前記第2の基板の前記背面側の表面とを粘着層によって基台に保持することを特徴とする請求項1ないし3のいずれか1項に記載の製造方法。 The step of forming the scintillator layer, wherein, wherein for holding the said back-side surface of the second substrate before and Symbol surface on the opposite side of the back of the sensor panel on the base by the adhesive layer Item 4. The method according to any one of Items 1 to 3. 前記第2の基板は、センサ基板および該センサ基板の上に光を検出するセンサ部を有する他のセンサパネルであることを特徴とする請求項1ないし9のいずれか1項に記載の製造方法。   10. The manufacturing method according to claim 1, wherein the second substrate is a sensor substrate and another sensor panel including a sensor unit that detects light on the sensor substrate. . 前記センサパネルと前記他のセンサパネルとは、同一の保持基板の上に形成され、前記保持基板を切り出すことによって取得されたことを特徴とする請求項10に記載の製造方法。   The manufacturing method according to claim 10, wherein the sensor panel and the other sensor panel are formed on the same holding substrate, and are obtained by cutting out the holding substrate. 前記第2の基板は、前記センサ基板と同一の材料で形成されていることを特徴とする請求項1ないし11のいずれか1項に記載の製造方法。   The manufacturing method according to claim 1, wherein the second substrate is formed of the same material as the sensor substrate. 前記第2の基板は、シンチレータの付着確率および熱容量の少なくともいずれが前記センサ基板と同一であることを特徴とする請求項1ないし11のいずれか1項に記載の製造方法。   The manufacturing method according to claim 1, wherein the second substrate has at least one of a scintillator adhesion probability and a heat capacity equal to that of the sensor substrate. 第1の基板の側面と第2の基板の側面とが接触するかまたは間隙をおいて位置するように前記第1の基板および前記第2の基板を保持しながら前記第1の基板の蒸着面および前記第2の基板の蒸着面にシンチレータを蒸着してシンチレータ層を形成する工程と、
シンチレータ層が形成された前記第1の基板をシンチレータ層が形成された前記第2の基板から分離してシンチレータパネルを取得する工程と、
センサ基板および該センサ基板の上に光を検出するセンサ部を有するセンサパネルの前記センサ部側に前記シンチレータパネルを取り付けて放射線撮像装置を取得する工程と、
を含み、
前記間隙は、前記シンチレータ層の厚さの2倍以下であることを特徴とする放射線撮像装置の製造方法。
The deposition surface of the first substrate while holding the first substrate and the second substrate so that the side surface of the first substrate and the side surface of the second substrate are in contact with each other or are positioned with a gap therebetween. And forming a scintillator layer by vapor-depositing a scintillator on the vapor deposition surface of the second substrate;
Separating the first substrate on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed, and obtaining a scintillator panel;
Attaching the scintillator panel to the sensor unit side of the sensor panel having a sensor substrate and a sensor unit for detecting light on the sensor substrate to obtain a radiation imaging apparatus;
Including
The method of manufacturing a radiation imaging apparatus, wherein the gap is not more than twice the thickness of the scintillator layer.
前記シンチレータ層を形成する工程で、前記第1の基板の前記蒸着面と前記第2の基板の前記蒸着面との段差が前記シンチレータ層の厚さよりも小さくなるように前記第1の基板と前記第2の基板とを保持することを特徴とする請求項14に記載の製造方法。   In the step of forming the scintillator layer, the step of forming the first substrate and the second substrate so that a step between the vapor deposition surface of the first substrate and the vapor deposition surface of the second substrate is smaller than the thickness of the scintillator layer. The manufacturing method according to claim 14, wherein the second substrate is held. 前記第1の基板と前記第2の基板は、同一の材料で形成されていることを特徴とする請求項14または15に記載の製造方法。   16. The manufacturing method according to claim 14, wherein the first substrate and the second substrate are made of the same material. 前記第2の基板は、シンチレータの付着確率および熱容量の少なくともいずれが前記第1の基板と同一であることを特徴とする請求項14または15に記載の製造方法。   16. The manufacturing method according to claim 14, wherein the second substrate has at least one of a scintillator adhesion probability and a heat capacity equal to that of the first substrate. 請求項1ないし17のいずれか1項に記載の製造方法によって製造され、前記第2の基板が位置した側の周縁部におけるシンチレータ層が側壁を有することを特徴とする放射線撮像装置。 Claims 1 to be manufactured by the method according to any one of 17, radiation imaging apparatus scintillator layer is characterized by having a side wall in the peripheral part of the side of the second substrate is located. 請求項18に記載の放射線撮像装置と、
前記放射線撮像装置からの信号を処理する信号処理部と、
前記信号処理部からの信号を表示するための表示部と、
前記放射線撮像装置に向けて放射線を発生させるための放射線源と、
を備えることを特徴とする放射線撮像システム。
A radiation imaging apparatus according to claim 18;
A signal processing unit for processing a signal from the radiation imaging apparatus;
A display unit for displaying a signal from the signal processing unit;
A radiation source for generating radiation towards the radiation imaging device ;
A radiation imaging system comprising:
JP2014082310A 2014-04-11 2014-04-11 Manufacturing method of radiation imaging apparatus Active JP6333034B2 (en)

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