JP2015203606A5 - - Google Patents
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- JP2015203606A5 JP2015203606A5 JP2014082310A JP2014082310A JP2015203606A5 JP 2015203606 A5 JP2015203606 A5 JP 2015203606A5 JP 2014082310 A JP2014082310 A JP 2014082310A JP 2014082310 A JP2014082310 A JP 2014082310A JP 2015203606 A5 JP2015203606 A5 JP 2015203606A5
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- JP
- Japan
- Prior art keywords
- substrate
- sensor
- scintillator layer
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims description 65
- 238000003384 imaging method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims 16
- 230000002093 peripheral Effects 0.000 claims 5
- 238000007740 vapor deposition Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive Effects 0.000 claims 1
- 238000005520 cutting process Methods 0.000 claims 1
- 238000003825 pressing Methods 0.000 claims 1
Description
本発明の1つの側面は、センサ基板および該センサ基板の上に光を検出するセンサ部を有するセンサパネルの前記センサ部側の面と、第2の基板の表面と、にシンチレータを蒸着してシンチレータ層を形成する工程と、前記シンチレータ層が形成された前記センサパネルをシンチレータ層が形成された前記第2の基板から分離して放射線撮像装置を取得する工程と、を含み、前記シンチレータ層を形成する工程は、前記センサ基板の側面と前記第2の基板の側面とが接触するかまたは前記シンチレータ層の厚さの2倍以下の間隙をおいて位置するように保持しながら行われることを特徴とする。 One aspect of the present invention includes the sensor portion side surface of the sensor panel having a sensor unit for detecting light on the sensor substrate and the sensor substrate and the surface of the second substrate, the scintillator is deposited Forming a scintillator layer; and separating the sensor panel on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed to obtain a radiation imaging apparatus, the scintillator layer comprising: The forming step is performed while holding the sensor substrate so that the side surface of the sensor substrate and the side surface of the second substrate are in contact with each other or are positioned with a gap of twice or less the thickness of the scintillator layer. Features.
Claims (19)
前記シンチレータ層が形成された前記センサパネルをシンチレータ層が形成された前記第2の基板から分離して放射線撮像装置を取得する工程と、
を含み、
前記シンチレータ層を形成する工程は、前記センサ基板の側面と前記第2の基板の側面とが接触するかまたは前記シンチレータ層の厚さの2倍以下の間隙をおいて位置するように保持しながら行われることを特徴とする放射線撮像装置の製造方法。 Forming said sensor portion side surface of the sensor panel having a sensor unit for detecting light on the sensor substrate and the sensor substrate, and the surface of the second substrate, a scintillator layer by depositing a scintillator on a
Separating the sensor panel on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed to obtain a radiation imaging apparatus;
Including
In the step of forming the scintillator layer, the side surface of the sensor substrate and the side surface of the second substrate are in contact with each other or are held so as to be positioned with a gap less than twice the thickness of the scintillator layer. The manufacturing method of the radiation imaging device characterized by the above-mentioned.
シンチレータ層が形成された前記第1の基板をシンチレータ層が形成された前記第2の基板から分離してシンチレータパネルを取得する工程と、
センサ基板および該センサ基板の上に光を検出するセンサ部を有するセンサパネルの前記センサ部側に前記シンチレータパネルを取り付けて放射線撮像装置を取得する工程と、
を含み、
前記間隙は、前記シンチレータ層の厚さの2倍以下であることを特徴とする放射線撮像装置の製造方法。 The deposition surface of the first substrate while holding the first substrate and the second substrate so that the side surface of the first substrate and the side surface of the second substrate are in contact with each other or are positioned with a gap therebetween. And forming a scintillator layer by vapor-depositing a scintillator on the vapor deposition surface of the second substrate;
Separating the first substrate on which the scintillator layer is formed from the second substrate on which the scintillator layer is formed, and obtaining a scintillator panel;
Attaching the scintillator panel to the sensor unit side of the sensor panel having a sensor substrate and a sensor unit for detecting light on the sensor substrate to obtain a radiation imaging apparatus;
Including
The method of manufacturing a radiation imaging apparatus, wherein the gap is not more than twice the thickness of the scintillator layer.
前記放射線撮像装置からの信号を処理する信号処理部と、
前記信号処理部からの信号を表示するための表示部と、
前記放射線撮像装置に向けて放射線を発生させるための放射線源と、
を備えることを特徴とする放射線撮像システム。 A radiation imaging apparatus according to claim 18;
A signal processing unit for processing a signal from the radiation imaging apparatus;
A display unit for displaying a signal from the signal processing unit;
A radiation source for generating radiation towards the radiation imaging device ;
A radiation imaging system comprising:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014082310A JP6333034B2 (en) | 2014-04-11 | 2014-04-11 | Manufacturing method of radiation imaging apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014082310A JP6333034B2 (en) | 2014-04-11 | 2014-04-11 | Manufacturing method of radiation imaging apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015203606A JP2015203606A (en) | 2015-11-16 |
JP2015203606A5 true JP2015203606A5 (en) | 2017-05-25 |
JP6333034B2 JP6333034B2 (en) | 2018-05-30 |
Family
ID=54597130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014082310A Active JP6333034B2 (en) | 2014-04-11 | 2014-04-11 | Manufacturing method of radiation imaging apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6333034B2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107398844B (en) * | 2017-06-26 | 2019-05-28 | 东软医疗系统股份有限公司 | A kind of detector manufacture fixture and scintillator localization method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4447752B2 (en) * | 2000-08-03 | 2010-04-07 | 浜松ホトニクス株式会社 | Radiation detector |
US20050008291A1 (en) * | 2003-07-08 | 2005-01-13 | Baney Dougas M. | Optical wave-guide microstructured environment absorption cell |
JP5680943B2 (en) * | 2010-11-16 | 2015-03-04 | キヤノン株式会社 | Scintillator, radiation detection device and radiation imaging device |
JP6071283B2 (en) * | 2012-07-04 | 2017-02-01 | キヤノン株式会社 | Radiation detection apparatus and manufacturing method thereof |
JP2014048061A (en) * | 2012-08-29 | 2014-03-17 | Canon Inc | Radiation imaging device, manufacturing method of the same, and radiation imaging system |
-
2014
- 2014-04-11 JP JP2014082310A patent/JP6333034B2/en active Active
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