JP2015198063A - infrared heater - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an infrared heater for radiating infrared ray from micro cavities while reducing an effect of the shape of a heating body.SOLUTION: An infrared heater 10 has a heating body 12, and a micro cavity forming body 30 including micro cavities 40 at least the surfaces of which are formed of conductors, and having a characteristic that infrared ray having a peak wavelength of a non-Plank distribution is radiated by the micro cavities 40 upon absorption of energy from the heating body 12. The micro cavity forming body 30 has a characteristic that infrared ray of 5 to 7 μm in peak wavelength is radiated by the micro cavities 40 upon absorption of energy from the heating body 12. The infrared heater 10 has a conduction member 20 which is provided to the heating body 12 side of the micro cavity forming body 30 and has a high thermal conductivity.

Description

  The present invention relates to an infrared heater.

  Conventionally, an infrared heater that emits infrared rays having a wavelength of 5 to 6 μm is known. For example, Patent Document 1 describes an infrared heater including a heating element made of a metal plate such as tungsten and having a microcavity formed on the surface thereof. In this infrared heater, it is described that when power is supplied to the heating element, infrared rays having a wavelength of 5 to 6 μm are amplified by the microcavity. Thereby, it is supposed that the energy efficiency in the infrared heater which emits infrared rays having a wavelength of 5 to 6 μm can be improved.

JP 2013-206606 A

  By the way, when electric power is supplied to the heating element to emit infrared rays, the shape of the heating element may be restricted. For example, it has been difficult to flow a current uniformly through a heating element formed in a planar shape. In addition, in the case of a heating element formed in a planar shape, a resistance value cannot be ensured, a small voltage and a large current are generated, and wiring and a control device may be uneconomical. Therefore, for example, even when it is desired to radiate infrared rays from a planar heating element, there is a case where the shape of the heating element is restricted, for example, the linear heating element needs to be formed in a zigzag shape. As a result, there are cases in which the in-plane distribution of the emitted infrared rays has an influence such as unevenness. In the heating element described in Patent Document 1, infrared rays having a peak wavelength of 5 to 6 μm can be radiated by the heating element in which the microcavities are formed. About the influence, it was the same as that of other conventional infrared heaters.

  The present invention has been made to solve such problems, and has as its main object to provide an infrared heater that emits infrared rays from a microcavity while further reducing the influence of the shape of the heating element.

  The present invention employs the following means in order to achieve the main object described above.

The infrared heater of the present invention is
A heating element;
A microcavity having at least a surface formed of a conductor, and a microcavity forming body having a characteristic of emitting infrared light having a peak wavelength of non-Planck distribution when the energy from the heating element is absorbed;
It is equipped with.

  In the infrared heater according to the present invention, when the energy from the heating element is absorbed, the microcavity forming body emits infrared light having a peak wavelength of non-Planck distribution from the microcavity. Moreover, since this formation body becomes a secondary radiator and emits infrared rays, the in-plane distribution of infrared rays emitted from this infrared heater can be adjusted by the shape of the microcavity formation body. For example, even when it is desired to use a planar heater, the heating element itself does not necessarily have a planar shape, and the microcavity forming body may be formed in a planar shape. Thus, the shape of the heating element hardly affects the in-plane distribution of infrared rays emitted from the infrared heater. As described above, infrared rays from the microcavity can be emitted while further reducing the influence of the shape of the heating element. Here, “a microcavity having at least a surface made of a conductor” means a microcavity having at least a side surface and a bottom surface made of a conductor.

  In the infrared heater of the present invention, the microcavity forming body may have a characteristic of emitting infrared rays having a peak wavelength of 2 to 7 μm by the microcavity when absorbing energy from the heating element.

  The infrared heater of the present invention may include a refrigerant flow path formed outside the microcavity forming body as viewed from the heating element. If it carries out like this, the temperature of the surface of an infrared heater can be lowered | hung with the refrigerant | coolant which flows through a refrigerant | coolant flow path. By lowering the surface temperature, for example, adverse effects on an object emitting infrared rays from an infrared heater can be suppressed. In this case, the first transmissive layer and the second transmissive layer, which are formed on the outer side of the microcavity forming body as viewed from the heating element and are provided apart from each other, are provided. Both of the transmission layers can transmit infrared rays having at least the peak wavelength, and the coolant channel may be formed between the first transmission layer and the second transmission layer.

  The infrared heater according to the present invention may include a partial absorption layer provided outside the microcavity forming body as viewed from the heating element and capable of absorbing at least part of infrared light having a wavelength other than the peak wavelength. . In this way, the ratio of the infrared rays with the peak wavelength emitted from the microcavity forming body to the infrared rays emitted from the infrared heater to the outside can be further increased. In the aspect including the first transmission layer and the second transmission layer, at least one of the first transmission layer and the second transmission layer may be the partial absorption layer.

  The infrared heater of the present invention may be provided with a conductive member provided on the heating element side of the microcavity forming body and having a high thermal conductivity. By doing so, the thermal uniformity of the microcavity forming body is improved, so that the in-plane distribution of infrared rays emitted from the microcavity is less likely to be biased. In addition, “provided on the heating element side of the microcavity forming body” means that the conductive member is in direct contact with the microcavity forming body and indirectly in contact with another member such as an adhesive layer. Including the case. The conductive member may have a higher thermal conductivity than the microcavity forming body. The conductive member may be made of SiC.

  The infrared heater of the present invention comprises a heater body having the heating element and a protective member that covers the heating element, and the microcavity forming body is provided outside the heater body as viewed from the heating element. May be. In this case, the protective member may be a tubular member. The protective member may be in contact with the heating element or may be separated.

  In the infrared heater of the present invention, the microcavity may have a horizontal width and a vertical width of 3 to 4 μm and a depth of 2.5 to 4 μm. Within this range, infrared rays having a peak wavelength of 5 to 7 μm can be reliably emitted by the microcavity. In addition, not only within this range, but also by adjusting the horizontal width, vertical width, and depth, infrared light having a peak wavelength of 2 to 7 μm can be emitted from the microcavity.

FIG. 3 is a cross-sectional view of the infrared heater 10. AA sectional drawing of FIG. Sectional drawing of the infrared heater 110 of a modification. Sectional drawing of the infrared heater 210 of a modification.

  Next, embodiments of the present invention will be described with reference to the drawings. 1 is a cross-sectional view of the infrared heater 10, and FIG. 2 is a cross-sectional view taken along the line AA of FIG. In the present embodiment, the left-right direction, the front-rear direction, and the up-down direction are as shown in FIG. The infrared heater 10 includes a heater body 11, a conductive member 20, a microcavity forming body 30, and a casing 70. This infrared heater 10 radiates infrared rays having a predetermined peak wavelength (in this embodiment, a peak wavelength of 5 to 7 μm) toward an object (not shown) disposed below.

  The heater body 11 is configured as a so-called planar heater, and includes a heating element 12 in which a linear member is bent in a zigzag manner, and a protective member that is an insulator that contacts the heating element 12 and covers the periphery of the heating element 12. 13. The heating element 12 releases heat and radiant energy when heated by being supplied with electric power. Examples of the material of the heating element 12 include W, Mo, Ta, Fe—Cr—Al alloy, Ni—Cr alloy, and the like. Examples of the material of the protection member 13 include insulating resins such as polyimide, ceramics, and the like. The heater body 11 can transmit energy such as infrared rays from a plane (upper surface and lower surface) along the front-rear and left-right directions by the heating element 12. The heater body 11 is disposed inside the casing 70. As shown in FIG. 2, holders 16 penetrating the front and rear sides of the casing 70 are attached to both front and rear ends of the heating element 12. The heater body 11 is supported by the casing 70 via the holder 16. In addition, the electrical wiring 18 connected to both front and rear ends of the heating element 12 penetrates through the holder 16 and is drawn out to the outside in an airtight manner.

  The conductive member 20 is a flat plate member made of a material having high thermal conductivity, and is bonded to the lower surface of the heater body 11 and the upper surface of the microcavity forming body 30. The bonding method between the conductive member 20 and the heater body 11 or the microcavity forming body 30 may be an adhesive, or may be a mechanical pressure such as sandwiching by an external member. The conductive member 20 is preferably formed of a material having a higher thermal conductivity than the microcavity forming body 30 (in particular, at least one of the main body layer 32 and the convex portion forming layer 34). In the present embodiment, the conductive member 20 is formed of ceramics made of SiC. In this embodiment, the conductive member 20 is formed so as to cover the entire upper surface of the microcavity forming body 30.

  The microcavity forming body 30 is a plate-like member in which a plurality of microcavities 40 are formed on the lower surface that is the surface opposite to the heating element 12. The microcavity forming body 30 includes a flat plate-like main body layer 32, a convex portion forming layer 34 formed on the lower surface of the main body layer 32 to form a downward convex portion, the surface of the convex portion forming layer 34, and the microcavity forming body. And a conductive layer 36 covering the surface of 30. The microcavity forming body 30 is arranged so as to close the opening below the casing 70, and is positioned so as to cover the area directly below the heater body 11 and its periphery (front-rear and left-right directions). In the present embodiment, the main body layer 32 is made of a glass substrate. The protrusion forming layer 34 is formed in a lattice shape so as to leave a part of the lower surface of the main body layer 32 (so as not to cover it) when viewed from below (see also the enlarged view in the lower part of FIG. 1). The convex forming layer 34 is formed of, for example, a resin or an inorganic material. The conductive layer 36 covers the entire lower surface of the microcavity forming body 30. More specifically, the conductive layer 36 covers the lower surface and side surfaces (front and rear, left and right surfaces) of the convex portion forming layer 34 and the lower surface (portion where the convex portion forming layer 34 is not formed) of the main body layer 32. ing. The conductive layer 36 is made of a conductor, and examples of the material include metals such as gold and nickel, and conductive resins. The conductive layer 36 is preferably formed of a material having a low emissivity in the infrared region.

  The microcavity 40 includes a side surface 42 of the conductive layer 36 (a portion of the conductive layer 36 that covers the side surface of the projection forming layer 34) and a bottom surface 44 (a portion of the conductive layer 36 that covers the lower surface of the main body layer 32). It is an enclosed rectangular parallelepiped space. The microcavity 40 is formed as a space opened downward. As shown in the enlarged view in the lower part of FIG. As the width of the side surface 42 of each microcavity 40 is narrower, the non-Planck distribution increases in the radiation from the microcavity forming body 40. When the microcavity forming body 30 absorbs energy (for example, infrared energy) from the heating element 12 by the microcavity 40, the microcavity forming body 30 increases the emissivity of infrared rays in a specific wavelength region and radiates downward. The size of the microcavity 40 is designed so that this specific wavelength region is a wavelength region including the above-described predetermined peak wavelength (5 to 7 μm in the present embodiment) and its periphery. Specifically, when the shape of the microcavity 40 when viewed from below is a square, one side (horizontal width and vertical width) may be 3 to 4 μm and the depth may be 2.5 to 4 μm. For example, if one side of the microcavity 40 is 3 μm and the depth is 2.5 μm, the microcavity 40 increases the emissivity at a wavelength of 5.1 μm. If one side of the microcavity 40 is 3 μm and the depth is 4 μm, the microcavity 40 increases the emissivity at a wavelength of 5.6 μm. If one side of the microcavity 40 is 3.5 μm and the depth is 3 μm, the microcavity 40 increases the emissivity at a wavelength of 6.0 μm. As described above, the microcavity forming body 30 is formed with the microcavity 40, so that, regardless of the temperature of the microcavity forming body 30, the emissivity of a predetermined wavelength is increased and an infrared ray having a peak at the wavelength. It has a characteristic to radiate. That is, the microcavity forming body 30 has a characteristic of emitting infrared light having a peak wavelength of non-Planck distribution by the microcavity 40.

  Such a microcavity forming body 30 can be formed as follows, for example. First, the convex part formation layer 34 is formed in the part used as the lower surface of the main body layer 32 by known nanoimprint. As a material for forming, a material that becomes ceramic, glass, heat-resistant resin, or the like as a final form can be used. The conductive layer 36 is provided with conductivity on a necessary surface by surface treatment such as sputtering of gold and plating of nickel so as to cover the surface (lower surface and side surfaces) of the convex portion forming layer 34 and the lower surface of the main body layer 32. Form. In addition, when the material (the main body layer 32 and the convex part formation layer 34) for forming the microcavity 40 itself has conductivity, the surface treatment (formation of the conductive layer 36) can be omitted. When the formation of the conductive layer 36 is omitted, the main body layer 32 and the convex portion forming layer 34 are preferably formed of a material having a low emissivity in the infrared region.

  As shown in FIGS. 1 and 2, the casing 70 has a substantially rectangular parallelepiped shape having a space inside and having a bottom surface opened. In the space inside the casing 70, the heater main body 11, the conductive member 20, and the microcavity forming body 30 are arranged. A support member 71 is provided at the lower portion of the casing 70, and the support member 71 supports both front and rear ends of the lower surface of the microcavity forming body 30 (the lower surface of the conductive layer 36). The casing 70 is made of metal (for example, SUS or aluminum) so as to reflect infrared rays emitted from the heating element 12.

  An example of using such an infrared heater 10 will be described below. First, a power source (not shown) is connected to the electrical wirings 18 at both ends of the heating element 12 so that the temperature of the heating element 12 becomes a preset temperature (which is not limited to 700 ° C. here). Electric power is supplied to the heating element 12. About this electric power, you may supply so that the temperature of the microcavity formation body 30 may become preset temperature. From the heating element 12 that has reached 700 ° C., energy is transmitted to the surroundings by the heat transfer 3 form of conduction, convection, and radiation. In the present embodiment, since the periphery of the heating element 12 is molded with the protection member 13, the radiation is converted into radiation from the surface of the protection member 13 (in this case, the radiation has a characteristic as a gray body in general). And its peak wavelength is considered to match that of the Planck distribution). Further, since the protective member 13 and the microcavity forming body 30 are in close contact with each other via the conductive member 20, energy is transmitted from the heating element 12 to the microcavity forming body 30 mainly in a conductive form. As a result, when the microcavity forming body 30 is heated, the microcavity forming body 30 rises to a predetermined temperature, becomes a secondary radiator, and emits infrared rays. At this time, since a plurality of microcavities 40 are formed in the microcavity forming body 30, infrared rays radiated downward from the microcavity forming body 30 have a predetermined wavelength (peak wavelength of 5 to 7 μm in this embodiment). The emissivity is increased. As a result, infrared rays having a non-Planck distribution peak wavelength (a peak wavelength determined regardless of the temperature of the microcavity forming body 30, in this embodiment, a peak wavelength of 5 to 7 μm) downward from the microcavity forming body 30. Radiated. Thereby, with respect to the target object arrange | positioned under the infrared heater 10, the infrared rays whose wavelength is 5-7 micrometers can be selectively radiated | emitted. For example, polyimide resin is satisfactorily annealed by infrared rays having a peak wavelength of 5 to 6 μm. Therefore, annealing can be efficiently performed by using a polyimide resin as an object and radiating infrared light from the infrared heater 10 to the object. In addition, ketone-based solvents and the like have an absorption band in this wavelength range, and thus are effective for drying such solvents. In the present embodiment, the microcavity forming body 30 is disposed so as to close the opening below the casing 70 as described above, and covers the region directly below the heater body 11. Therefore, infrared rays are not easily emitted directly from the heating element 12 (the protective member 13 in the present embodiment) to the outside of the infrared heater 10. Therefore, since the infrared rays having the peak wavelength of the Planck distribution from the protective member 13 do not easily reach the object, the ratio of the infrared rays having a wavelength of 5 to 7 μm among the infrared rays from the infrared heater 10 to the object tends to increase. Further, by forming the conductive layer 36 with a material having a low infrared emissivity, the non-cavity portion of the conductive layer 36 itself (for example, the portion facing the lower side of the side surface 42 in FIG. 1, that is, the lower surface of the convex portion forming layer 34). The infrared radiation intensity having the peak wavelength of the Planck distribution radiated from the covering portion) is lowered. Therefore, the ratio of the infrared rays in the wavelength region in which the emissivity is amplified by the microcavity 40 among the infrared rays from the infrared heater 10 to the target becomes higher.

  According to the infrared heater 10 of the present embodiment described above, when the energy from the heating element 12 is absorbed, the microcavity forming body 30 becomes a secondary radiator and radiates infrared rays. The in-plane distribution of infrared rays can be adjusted by the shape of the microcavity forming body 30 without depending on the shape of the heating element 12. For example, when the infrared heater 10 is to be a planar heater, the heating element 12 does not necessarily have a planar shape, and if the microcavity forming body 30 is formed in a planar shape (flat plate shape) as in this embodiment. Good. In addition, the heating element 12 is formed by bending a linear member in a zigzag manner, but in such a shape, the in-plane distribution of infrared rays in the irradiation range is uneven compared to the case where the heating element 12 is flat. It may be affected by such as. However, in this embodiment, since the infrared rays from the microcavity forming body 30 are mainly emitted to the object below the infrared heater 10, the shape of the heating element 12 is the infrared ray emitted from the infrared heater 10. Insensitive to internal distribution. As described above, infrared rays from the microcavity 40 can be emitted while further reducing the influence of the shape of the heating element 12.

  Further, the microcavity forming body 30 has a characteristic of emitting infrared rays having a peak wavelength of 5 to 7 μm by the microcavity 40 when absorbing energy from the heating element 12.

  Furthermore, the infrared heater 10 is provided on the heat generating body 12 side of the microcavity forming body 30 and includes a conductive member 30 having a high thermal conductivity. For this reason, since the thermal uniformity of the microcavity forming body 30 is improved, the in-plane distribution of infrared rays emitted from the microcavity 40 is less likely to be biased.

  Furthermore, the infrared heater 10 includes a heater body 11 having a heating element 12 and a protective member 13 that covers the heating element 12, and the microcavity forming body 30 is located outside the heater body 11 when viewed from the heating element 12. Is provided. The protection member 13 is in contact with the heating element 12.

  The microcavity 40 has a lateral width and a longitudinal width of 3 to 4 μm and a depth of 2.5 to 4 μm. Within this range, infrared rays having a peak wavelength of 5 to 7 μm can be reliably emitted by the microcavity.

  It should be noted that the present invention is not limited to the above-described embodiment, and it goes without saying that the present invention can be implemented in various modes as long as it belongs to the technical scope of the present invention.

  For example, in the above-described embodiment, the lower surface of the microcavity forming body 30 constitutes the outer surface of the infrared heater 10, but is not limited thereto. For example, the infrared heater 10 may include a first transmission layer and a second transmission layer that are formed on the outer side of the microcavity forming body 30 when viewed from the heating element 12 and are provided apart from each other. FIG. 3 is a cross-sectional view of a modified infrared heater 110. FIG. 3 shows the same cross section as FIG. The infrared heater 110 includes a first transmission layer 50 disposed below the microcavity formation body 30 and spaced from the microcavity formation body 30, and a second transmission layer disposed below the first transmission layer 50 and spaced apart from the first transmission layer 50. And a layer 52. The first transmissive layer 50 and the second transmissive layer 52 are formed of a material that can transmit at least infrared light having a non-plank distribution peak wavelength (peak wavelength 5 to 7 μm in the infrared heater 110) emitted from the microcavity forming body 30. ing. Examples of the material of the first transmission layer 50 and the second transmission layer 52 include silicon and germanium. Both front and rear ends of the first transmission layer 50 are supported by support members 72 provided on the casing 70. Similarly, both front and rear ends of the second transmission layer 52 are supported by support members 73 provided on the casing 70. In addition, a refrigerant flow path 75 is formed as a space surrounded by the first permeable layer 50, the second permeable layer 52, and the casing 70. A fluid inlet / outlet port 74 penetrating the casing 70 is formed before and after the casing 70. The refrigerant flows into the refrigerant flow path 75 from one side of the fluid inlet / outlet 74, and the refrigerant flows out from the refrigerant flow path 75 to the other side of the fluid inlet / outlet 74. In the infrared heater 110, the temperature of the second transmission layer 52, which is the surface (lower surface) of the infrared heater, can be lowered by the refrigerant flowing through the refrigerant flow path 75 (for example, 300 ° C. or lower, 200 ° C. or lower). By lowering the surface temperature, for example, adverse effects on an object emitting infrared rays from the infrared heater 110 can be suppressed. In addition, by cooling the first transmission layer 50 and the second transmission layer 52, they become secondary radiators and unnecessary wavelengths (other than the peak wavelength of the non-Planck distribution emitted by the microcavity forming body 30). (Wavelength) of infrared radiation can be further suppressed. Examples of the refrigerant include gases such as air and inert gas.

  The refrigerant flow path is not limited to the one formed between the first permeable layer 50 and the second permeable layer 52 as shown in FIG. 3, but is located outside the microcavity forming body 30 when viewed from the heating element 12. What is necessary is just to be formed. For example, the second transmission layer 52 may not be provided, and the space between the first transmission layer 50 and the microcavity forming body 30 may be used as the refrigerant flow path.

  In addition, at least one of the first transmission layer 50 and the second transmission layer 52 of the infrared heater 110 illustrated in FIG. 3 is at least a part of infrared light having a wavelength other than the peak wavelength of the non-Planck distribution emitted by the microcavity forming body 30. It may be a partial absorption layer that can absorb water. By so doing, it is possible to further increase the ratio of the infrared light having the peak wavelength of the non-Planck distribution radiated from the microcavity forming body 30 in the infrared radiation radiated from the infrared heater 110 to the outside. Note that one of the first transmission layer 50 and the second transmission layer 52 can absorb infrared rays having a peak wavelength less than the non-Planck distribution emitted from the microcavity formation body 30, and the other is from the microcavity formation body 30. It may be possible to absorb infrared rays exceeding the peak wavelength of the non-Planck distribution emitted. For example, one of the first transmission layer 50 and the second transmission layer 52 may be formed of a material that absorbs infrared rays having a wavelength of less than 5 μm, and the other may be formed of a material that absorbs infrared rays having a wavelength of more than 7 μm. The infrared heater 10 may include a partial absorption layer, and the infrared heater 110 may include a partial absorption layer separately from the first transmission layer 50 and the second transmission layer 52.

  In the above-described embodiment, the conductive member 20 is bonded to the lower surface of the heater body 11 and the upper surface of the microcavity forming body 30 via the adhesive layer, but is not limited thereto. The conductive member 20 only needs to be provided on the heating element 12 side of the microcavity forming body 30. For example, the conductive member 20 and the microcavity forming body 30 may be in direct contact with no other member such as an adhesive layer. Further, the heating element 12 and the conductive member 20 may be separated from each other. Further, the infrared heater 10 may not include the conductive member 20.

  In the above-described embodiment, the protection member 13 is in contact with the heating element 12 and covers the periphery of the heating element 12, but is not limited thereto. For example, the heater body 11 may include a heating element 12 and a tubular (for example, cylindrical) protective member that is spaced apart from the heating element 12 and surrounds the periphery of the heating element 12. Further, the heater body 11 may not include a protective member.

  In the embodiment described above, the heater main body 11 is a so-called planar heater, and the heating element 12 is a linear member curved in a zigzag, but is not limited thereto. For example, the heating element 12 may be a linear (eg, rod-shaped) member that does not curve. Further, the infrared heater 10 may include a plurality of heater bodies 11. In this case, one microcavity forming body 30 may be arranged below the plurality of heater bodies 11 so as to cover at least directly below the plurality of heater bodies 11. That is, the microcavity forming body 30 may be shared by the plurality of heater bodies 11.

  In the above-described embodiment, the microcavity forming body 30 includes the main body layer 32 and the convex portion forming layer 34, but is not limited thereto. For example, the microcavity forming body 30 may not include the convex portion forming layer 34, and a bottomed hole or groove may be formed in the main body layer 32 by etching or the like. In this case, the microcavity 40 may be formed by covering the side and bottom surfaces of the holes and grooves formed in the main body layer 32 with the conductive layer 36.

  In the embodiment described above, the microcavity 40 is a substantially rectangular parallelepiped space surrounded by the bottom surface 44 and the side surface 42, and a plurality of the microcavities 40 are formed side by side in the front, rear, left, and right. I can't. It is only necessary to form a microcavity capable of emitting infrared rays having a peak wavelength of non-Planck radiation when absorbing energy from the heating element 12. For example, a microcavity may be formed as shown in FIG. The infrared heater 210 of the modification shown in FIG. 4 has the same configuration as the infrared heater 10 except that a microcavity forming body 230 is provided instead of the microcavity forming body 30. The microcavity forming body 230 includes a convex portion forming layer 234 and a conductive layer 236 on the lower surface of the main body layer 32. The bottom surface of the microcavity forming body 230 is in a state in which the unevenness is reversed from the bottom surface of the microcavity forming body 30 of the infrared heater 10. That is, the convex portion forming layer 234 has a shape in which a plurality of rectangular parallelepipeds projecting downward from the lower surface of the main body layer 32 are arranged in the front, rear, left, and right, so that a lattice-shaped region remains on the lower surface of the main body layer 32 ( It is formed so as not to cover. The conductive layer 236 covers the lower surface and side surfaces (front and rear, left and right surfaces) of the convex portion forming layer 234 and the lower surface (grid-like region where the convex portion forming layer 234 is not formed) of the main body layer 32. Yes. As a result, a plurality of grooves intersecting the front, rear, left and right are formed in a lattice shape on the lower surface of the microcavity forming body 30. A space surrounded by the side surface 242 of the conductive layer 236 (the portion of the conductive layer 236 that covers the side surface of the convex portion forming layer 234) and the bottom surface 244 (the portion of the conductive layer 236 that covers the lower surface of the main body layer 32). As shown, a microcavity 240 is formed. Similarly to the embodiment described above, the microcavity forming body 230 in which the microcavity 240 having such a shape is formed also has a characteristic of emitting infrared rays having a peak wavelength of non-Planck radiation when absorbing energy from the heating element 12. Have. In the microcavity 240, the peak wavelength of non-plank radiation can be adjusted by adjusting the distance between the side surfaces 242 facing front and rear or left and right and the depth of the microcavity 240.

  In the above-described embodiment, the conductive layer 36 covers the lower surface and side surfaces of the convex portion forming layer 34 and the lower surface of the main body layer 32. However, the conductive layer 36 only needs to cover at least the surface of the microcavity 40. . That is, the conductive layer 36 only needs to cover at least the side surface of the convex portion forming layer 34 and the lower surface of the main body layer 32, and the lower surface of the convex portion forming layer 34 may not be covered. Also in the microcavity 240 of FIG. 4, the conductive layer 236 may not cover the lower surface of the convex portion forming layer 234.

  In the embodiment described above, the shape of the casing 70 is a substantially rectangular parallelepiped shape. However, the shape is not particularly limited to this, and may be any shape. For example, a cylindrical shape with a semicircular cross section, a cylindrical shape with a semi-elliptical cross section, and a cylindrical shape with an n-shaped cross section (n is an integer of 3 or more) may be used.

  In the embodiment described above, the set temperature of the heating element 12 is 700 ° C., but any temperature may be used as long as infrared rays are emitted from the heating element 12. For example, the set temperature may be 300 ° C. or 500 ° C.

  In the above-described embodiment, the microcavity forming body 30 has a characteristic of emitting infrared rays having a peak wavelength of 5 to 7 μm by the microcavity 40 when absorbing energy from the heating element 12, but is not limited thereto. . It is only necessary to form a microcavity capable of emitting infrared rays having a peak wavelength of non-Planck radiation when absorbing energy from the heating element 12. For example, not limited to the range shown in the above-described embodiment, the microcavity forming body emits infrared light having a peak wavelength of 2 to 7 μm by the microcavity by adjusting the horizontal width, vertical width, and depth of the microcavity 40. It is good also as what has.

  10, 110, 210 Infrared heater, 11 Heater body, 12 Heating element, 13 Protection member, 16 Holder, 18 Electrical wiring, 20 Conductive member, 30, 230 Microcavity formation body, 32 Body layer, 34, 234 Projection formation layer , 36, 236 Conductive layer, 40, 240 Microcavity, 42, 242 Side surface, 44, 244 Bottom surface, 50 First transmission layer, 52 Second transmission layer, 70 Casing, 71-73 Support member, 74 Fluid inlet / outlet, 75 Refrigerant Flow path.

Claims (8)

A heating element;
A microcavity having at least a surface formed of a conductor, and a microcavity forming body having a characteristic of emitting infrared light having a peak wavelength of non-Planck distribution when the energy from the heating element is absorbed;
Infrared heater with. The microcavity forming body has a characteristic of emitting infrared rays having a peak wavelength of 2 to 7 μm by the microcavity when absorbing energy from the heating element.
The infrared heater according to claim 1. The infrared heater according to claim 1 or 2,
A refrigerant flow path formed outside the microcavity forming body as seen from the heating element;
Infrared heater with. The infrared heater according to claim 3,
A first transmission layer and a second transmission layer which are formed outside the microcavity formation body as viewed from the heating element and are provided apart from each other;
With
Both the first transmissive layer and the second transmissive layer are capable of transmitting at least the infrared of the peak wavelength,
The refrigerant flow path is formed between the first transmission layer and the second transmission layer.
Infrared heater. The infrared heater according to any one of claims 1 to 4,
A partial absorption layer provided outside the microcavity forming body as seen from the heating element and capable of absorbing at least part of infrared rays having a wavelength other than the peak wavelength;
Infrared heater with. The infrared heater according to any one of claims 1 to 5,
A conductive member provided on the heating element side of the microcavity forming body and having a high thermal conductivity;
Infrared heater with. The infrared heater according to any one of claims 1 to 6,
A heater body having the heating element and a protective member covering the heating element;
With
The microcavity forming body is provided outside the heater body as seen from the heating element,
Infrared heater. The microcavity has a width and length of 3 to 4 μm and a depth of 2.5 to 4 μm.
The infrared heater of any one of Claims 1-7.

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