JP2015165185A - two-dimensional radiation detector - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a two-dimensional radiation detector capable of easily realizing a structure including a hole blocking layer.SOLUTION: A hole blocking layer 24 is formed out of a conductive organic crystalline material as opposed to a conventional technique for forming the hole blocking layer 24 out of an inorganic semiconductor. Since the organic crystalline material easily dissolves in an organic solvent, the hole blocking layer 24 formed of the conductive organic crystalline material over a large area can be formed by coating the organic solvent in which the organic crystalline material dissolves. Specifically, the hole blocking layer 24 can be uniformly coated by a coating device such as a spin coater, a dispenser, or an inkjet device. Furthermore, with the use of the inkjet device, the hole blocking layer 24 can be formed into patterns in pixels (for every pixel electrode 11). As a result, it is possible to easily realize a structure including the hole blocking layer 24 at a thickness of, for example, about several hundred nm to several μm by coating without the need to form the hole blocking layer 24 in a vacuum.

Description

  The present invention relates to a two-dimensional radiation detector used in the medical field, the industrial field, the nuclear field, and the like.

  Conventionally, various semiconductor materials, particularly CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride) crystals have been researched and developed as materials for highly sensitive radiation two-dimensional detectors, and some products have been commercialized. In this type of radiation two-dimensional detector, an opposing substrate having a photoelectric conversion semiconductor layer formed of CdTe or CdZnTe, and an active matrix substrate in which pixel electrodes are arranged in a two-dimensional matrix are made of conductive bumps (bump electrodes). ) (See, for example, Patent Documents 1 and 2).

  In order to reduce the leakage current, the radiation two-dimensional detector includes an electron blocking layer for blocking electrons that are the basis of the leakage current from being injected into the photoelectric conversion semiconductor layer from the outside, and a leakage current group. Are formed on each surface of the photoelectric conversion semiconductor layer (for example, see Patent Documents 1 to 3). . Furthermore, in order to further enhance the injection blocking effect, a leakage current may be further reduced by laminating low work function metals to form a Schottky barrier.

JP 2001-242255 A JP 2008-171833 A JP 2000-230981 A

  However, when these hole blocking layers are formed of an inorganic semiconductor or a Schottky metal in a large area, it is desired to have high purity and it is necessary to form them in a vacuum. As a result, there is a problem that a large-scale vacuum apparatus is required due to a method such as vacuum deposition or sputtering.

  This invention is made | formed in view of such a situation, Comprising: It aims at providing the radiation two-dimensional detector which can implement | achieve the structure which has a hole-blocking layer easily.

In order to achieve such an object, the present invention has the following configuration.
That is, the radiation two-dimensional detector according to the present invention is a radiation two-dimensional detector that detects radiation by converting radiation information into charge information upon incidence of radiation, and is a two-dimensional matrix that reads the charge information, respectively. An active matrix substrate including pixel electrodes arranged in a shape and a pixel array layer for arranging the pixel electrodes, a common electrode to which a bias voltage is applied, and a photoelectric conversion semiconductor layer that converts the radiation information into the charge information A counter substrate disposed opposite to the pixel electrode side of the active matrix substrate, the counter substrate including an electron blocking layer on a surface of the photoelectric conversion semiconductor layer on the common electrode side, and the photoelectric conversion semiconductor layer A hole blocking layer is provided on a surface opposite to the active matrix substrate opposite to the common electrode side. The surface of the counter substrate on the hole blocking layer side is electrically connected to the pixel electrode of the active matrix substrate for each pixel, and the photoelectric conversion semiconductor layer is made of CdTe (cadmium telluride) or CdZnTe (telluride). The hole blocking layer is made of a conductive organic crystal material.

  [Operation / Effect] According to the radiation two-dimensional detector according to the present invention, the hole blocking layer is formed of a conductive organic crystal instead of the hole blocking layer formed of an inorganic semiconductor. To do. Since an organic crystal is easily dissolved in an organic solvent, a hole blocking layer made of a conductive organic crystal can be formed in a large area by applying an organic solvent in which the organic crystal is dissolved. Specifically, the hole blocking layer can be uniformly applied by a coating apparatus such as a spin coater, a dispenser, and an ink jet. In addition, if ink jet is used, the hole blocking layer can be patterned in units of pixels (for each pixel electrode). As a result, a structure having a hole blocking layer having a thickness of, for example, about several hundred nm to several μm can be easily realized by coating without forming in vacuum.

  Note that the organic film described in Patent Document 3 (Japanese Patent Laid-Open No. 2000-230981) is obtained by mixing a hole transfer material into plastic represented by polycarbonate and the like, and the conductive organic crystal of the present invention. It should be noted that the product is different from the so-called conductive polymer. Moreover, in patent document 3 (Unexamined-Japanese-Patent No. 2000-230981), an organic film cannot be formed by application | coating. In the present invention, an electron blocking layer is formed on the surface of the photoelectric conversion semiconductor layer on the common electrode side, and a hole blocking layer is formed on the surface facing the active matrix substrate opposite to the common electrode side of the photoelectric conversion semiconductor layer. However, the hole blocking layer cannot be formed on the surface of the photoelectric conversion semiconductor layer on the common electrode side by replacing the formation surfaces of the electron blocking layer and the hole blocking layer. That is, since the common electrode is a conductor, it is meaningless to form a hole blocking layer made of a conductive organic crystal on the common electrode of the conductor.

  In the two-dimensional radiation detector according to the present invention, as shown in the energy band of FIG. 4, the LUMO (Lowest Unoccupied Molecular Orbital) level of the organic crystal is equivalent to the electron affinity of CdTe or CdZnTe, Preferably, the HOMO (Highest Occupied Molecular Orbital) level is higher than the valence band level of CdTe or CdZnTe. An electron affinity of CdTe or CdZnTe is 4 eV to 4.5 ev, an organic crystal having an LUMO level equivalent to this electron affinity, and an organic crystal having a HOMO level greater than the valence band level of CdTe or CdZnTe. By forming the hole blocking layer, holes injected from the outside are blocked, and signal electrons generated in CdTe or CdZnTe are not blocked. Here, “equivalent” in this specification includes up to a range of ± 0.5 eV. Therefore, the LUMO level of the organic crystal is 3.5 eV to 5.0 eV.

  In the above-described two-dimensional radiation detectors according to these inventions, the organic crystalline material is PCBM ([6,6] -Phenyl-C61-Butyric Acid Methyl Ester), PTCDI (perylene tetracarboxylic diimide), BCP (2,9- dimethyl-4,7-diphenyl-1,10-phenantrolin) or a dielectric thereof. A hole blocking layer made of an organic crystalline material can be formed from any of these materials.

  One example of the radiation two-dimensional detector according to these inventions described above is that a hole blocking layer made of an organic crystal is formed on the entire surface of the photoelectric conversion semiconductor layer. In the case of a material having a relatively high film resistance of the organic crystal, the hole blocking layer is formed on the entire surface of the photoelectric conversion semiconductor layer by applying the above-described organic solvent in which the material is dissolved to the entire photoelectric conversion semiconductor layer. Can be formed.

  Another example of the radiation two-dimensional detectors according to these inventions described above is that a hole blocking layer made of an organic crystal is patterned on the photoelectric conversion semiconductor layer for each pixel electrode. In the case of a material having a relatively low film resistance of the organic crystal, an image is blurred due to a current leak in the lateral direction. Therefore, in order to prevent the image blurring, if the ink jet is used as described above, the hole blocking layer is formed as a pixel electrode. A pattern can be formed every time. This insulates adjacent pixels (lateral pixels).

  In the radiation two-dimensional detectors according to these inventions described above, it is preferable that a metal having a work function of 4.5 eV or less is patterned for each pixel electrode on the hole blocking layer made of an organic crystal. Examples of the metal having a work function of 4.5 eV or less include Al (aluminum) and In (indium), as well as alkaline earth metals such as Mg (magnesium) and Ca (calcium). A Schottky barrier is formed by patterning such a low work function metal of 4.5 eV or less on the hole blocking layer for each pixel electrode. Moreover, as shown in the energy band of FIG. 4, holes can be blocked by an amount lower than the HOMO level of the organic crystal material, and the leakage current can be further reduced.

  According to the two-dimensional radiation detector according to the present invention, the hole blocking layer is formed of a conductive organic crystal, and thus the hole blocking layer is formed by coating without being formed in a vacuum as in the prior art. This structure can be realized easily.

It is a schematic sectional drawing of the radiation two-dimensional detector which concerns on an Example. It is the schematic sectional drawing which showed the specific structure of the active-matrix board | substrate and counter substrate of the radiation two-dimensional detector which concerns on an Example. It is the equivalent circuit per unit pixel of the active matrix board | substrate of the radiation two-dimensional detector which concerns on an Example. It is the schematic of an energy band. It is a schematic sectional drawing of the radiation two-dimensional detector which concerns on a modification. It is a schematic sectional drawing of the radiation two-dimensional detector which concerns on the further modification. It is a schematic sectional drawing of the radiation two-dimensional detector which concerns on the further modification.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a schematic cross-sectional view of the radiation two-dimensional detector according to the embodiment, and FIG. 2 is a schematic cross-section showing specific configurations of the active matrix substrate and the counter substrate of the radiation two-dimensional detector according to the embodiment. FIG. 3 is an equivalent circuit per unit pixel of the active matrix substrate of the radiation two-dimensional detector according to the embodiment, and FIG. 4 is a schematic diagram of an energy band. In FIG. 2, the conductive bumps are not shown.

  As shown in FIGS. 1 to 3, the radiation two-dimensional detector includes an active matrix substrate 1 and a counter substrate 2 disposed to face the active matrix substrate 1. The active matrix substrate 1 includes each pixel electrode 11 arranged in a two-dimensional matrix and a pixel arrangement layer for arranging them. On the other hand, the counter substrate 2 is formed by stacking a common electrode 21, an electron blocking layer 22, a photoelectric conversion semiconductor layer 23, and a hole blocking layer 24 in this order. The surface of the counter substrate 2 on the hole blocking layer 24 side is electrically connected to each pixel electrode 11 of the active matrix substrate 1 for each pixel. Specifically, the pixel electrodes 11 of the active matrix substrate 1 and the hole blocking layer 24 of the counter substrate 2 are bonded to each other by the conductive bumps 3 formed by screen printing or the like.

  The active matrix substrate 1 is formed of a glass substrate. On the active matrix substrate 1, in addition to the pixel electrode 11 described above, a charge storage capacitor 12 and a thin film transistor (TFT) 13 as a switching element are formed in a two-dimensional matrix, and a gate control line 14 (FIG. 3). ) And signal readout lines 15 (see FIG. 3) are vertically and horizontally patterned in the row and column directions, respectively.

  Specifically, as shown in FIG. 2, the reference electrode 12 a of the charge storage capacitor 12 and the gate electrode 13 a of the thin film transistor (TFT) 13 are stacked on the active matrix substrate 1 and covered with an insulating layer 31. A capacitor electrode 12b of the charge storage capacitor 12 is stacked on the insulating layer 31 so as to face the reference electrode 12a with the insulating layer 31 interposed therebetween, and a source electrode 13b and a drain electrode 13c of the TFT 13 are stacked and formed. The insulating layer 32 covers the electrode 11 except for the part. Note that the capacitor electrode 12b and the source electrode 13b are electrically connected to each other. As shown in FIG. 2, the capacitor electrode 12b and the source electrode 13b may be integrally formed simultaneously. The reference electrode 13a is grounded. For the insulating layers 31 and 32, for example, plasma SiN is used.

  As shown in FIG. 3, the gate control line 14 is electrically connected to the gate electrode 13a of the TFT 13 (see FIG. 2), and the signal readout line 15 is electrically connected to the drain electrode 13c of the TFT 13 (see FIG. 2). Connected. The gate control line 14 extends in the row direction of each pixel, and the signal readout line 15 extends in the column direction of each pixel. The gate control line 14 and the signal readout line 15 are orthogonal to each other. Reference numeral 23 in FIG. 3 is an equivalent circuit of the photoelectric conversion semiconductor layer. The charge storage capacitor 12, TFT 13, and insulating layers 31 and 32 including the gate control line 14 and the signal readout line 15 are arranged on the surface of the active matrix substrate 1 using a semiconductor thin film manufacturing technique or a fine processing technique. As a pattern is formed.

Returning to the description of FIGS. 1 and 2, the common electrode 21 is formed of a support substrate made of a conductive carbon graphite plate. The electron blocking layer 22 is formed of a P-type semiconductor such as ZnTe, Sb ₂ S ₃ , or Sb ₂ Te _3, and a thin film having a desired thickness of the P-type semiconductor is formed on the surface of the common electrode 21 by a sublimation method or a vapor deposition method. The layers are formed by sputtering, chemical precipitation, or electrodeposition.

  The photoelectric conversion semiconductor layer 23 is formed of CdTe or CdZnTe, and CdTe or CdZnTe having a thickness of about 0.2 mm to 0.5 mm is stacked on the surface of the electron blocking layer 22 by a sublimation method. The photoelectric conversion semiconductor layer 23 is flattened by sand blasting or the like for performing blasting by polishing or spraying an abrasive such as sand.

  The hole blocking layer 24 is formed of a conductive organic crystal, and an organic solvent in which the organic crystal is dissolved on the surface of the flattened photoelectric conversion semiconductor layer 23 is uniformly applied by a coating apparatus such as a spin coater, a dispenser, or an inkjet. The thin film hole blocking layer 24 having a thickness of about several hundreds nm to several μm is laminated.

  Here, as shown in the energy band of FIG. 4, the conductive organic crystal material has a LUMO (Lowest Unoccupied Molecular Orbital) level equivalent to the electron affinity of CdTe or CdZnTe, and the organic crystal HOMO (Highest Occupied). Molecular Orbital) level higher than the valence band level of CdTe or CdZnTe is used. An electron affinity of CdTe or CdZnTe is 4 eV to 4.5 ev, an organic crystal having an LUMO level equivalent to this electron affinity, and an organic crystal having a HOMO level greater than the valence band level of CdTe or CdZnTe. By forming the hole blocking layer 24 (see FIGS. 1 and 2), holes injected from the outside are blocked, and signal electrons generated in CdTe or CdZnTe are not blocked. As described in the section of “Means for Solving the Problems”, “equivalent” in this specification includes up to a range of ± 0.5 eV. Therefore, the LUMO level of the organic crystal is 3.5 eV to 5.0 eV.

  Specific organic crystal materials include: fullerene PCBM ([6,6] -Phenyl-C61-Butyric Acid Methyl Ester), perylene PTCDI (perylene tetracarboxylic diimide), BCP (2,9-dimethyl-). 4,7-diphenyl-1,10-phenantrolin) or a dielectric thereof (such as fullerene dielectric or perylene dielectric). The hole blocking layer 24 (see FIGS. 1 and 2) made of an organic crystal can be formed from any of these materials.

  Returning to the description of FIG. 1 and FIG. 2, as described above, the pixel electrode 11 of the active matrix substrate 1 and the hole blocking layer 24 of the counter substrate 2 are bonded to each other so as to face each other. The conductive bumps 3 are active by screen-printing a conductive material (conductive paste, anisotropic conductive film (ACF), anisotropic conductive paste, etc.) on the pixel electrode 11 in a portion not covered with the insulating layer 32. The pixel electrode 11 of the matrix substrate 1 and the hole blocking layer 24 of the counter substrate 2 are bonded to face each other. Note that the conductive bump 3 may be formed as a pixel electrode by bonding the conductive bump 3 to a portion not covered with the insulating layer 32 without forming the pixel electrode 11 before the bonding. .

  In this way, the two-dimensional radiation detector detects radiation by converting radiation information into charge information (electron-hole pair carriers) by the incidence of radiation. In summary, the radiation two-dimensional detector includes an active matrix substrate 1 and a counter substrate 2. The active matrix substrate 1 includes pixel electrodes 11 arranged in a two-dimensional matrix for reading out charge information (electron-hole pair carriers), and a pixel arrangement layer for arranging them. The counter substrate 2 includes a common electrode 21 to which a bias voltage (a negative bias voltage of −0.1 V / μm to 1 V / μm in the embodiment) is applied, and radiation information as charge information (electron-hole pair carrier). A photoelectric conversion semiconductor layer 23 to be converted is included.

  The counter substrate 2 has an electron blocking layer 22 on the surface of the photoelectric conversion semiconductor layer 23 on the common electrode 21 side, and a surface on the side facing the active matrix substrate 1 opposite to the common electrode 21 side of the photoelectric conversion semiconductor layer 23. Are provided with a hole blocking layer 24. The surface of the counter substrate 2 on the hole blocking layer 24 side is electrically connected to the pixel electrode 11 of the active matrix substrate 1 for each pixel. The photoelectric conversion semiconductor layer 23 is formed of CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride), and the hole blocking layer 24 is a conductive organic crystal.

  The operation of the radiation two-dimensional detector will be described with reference to FIGS. In a state where a bias voltage is applied to the common electrode 21, radiation (for example, X-rays) is incident, whereby electron-hole pair carriers are generated in the photoelectric conversion semiconductor layer 23 and temporarily stored in the charge storage capacitor 12. By driving the gate control line 14 at a necessary timing, the thin film transistor (TFT) 13 connected to the gate control line 14 is turned on, and the electron-hole pair carriers accumulated in the charge storage capacitor 12 are changed. It is read out as a signal charge and is read out to a signal collecting circuit (not shown) at a subsequent stage via a signal readout line 15 connected to a thin film transistor (TFT) 13.

  Since each pixel electrode 11 corresponds to each pixel, by converting the signal charges read corresponding to the pixel electrode 11 into pixel values, the pixel values corresponding to the pixels are arranged two-dimensionally. A two-dimensional image (a radiation image having a two-dimensional distribution) can be acquired.

  According to the radiation two-dimensional detector according to the present embodiment having the above-described configuration, the hole blocking layer is made of a conductive organic crystal instead of the hole blocking layer conventionally formed of an inorganic semiconductor. 24 is formed. Since the organic crystal is easily dissolved in the organic solvent, the hole blocking layer 24 made of the conductive organic crystal can be formed in a large area by applying the organic solvent in which the organic crystal is dissolved. Specifically, the hole blocking layer 24 can be uniformly applied by a coating apparatus such as a spin coater, a dispenser, or an ink jet. In addition, if ink jet is used, the hole blocking layer 24 can be patterned in units of pixels (for each pixel electrode 11). As a result, a structure having the hole blocking layer 24 having a thickness of, for example, about several hundred nm to several μm can be easily realized by coating without forming in vacuum.

  As described in the section of “Means for Solving the Problems”, the organic film in the above-mentioned Patent Document 3 (Japanese Patent Laid-Open No. 2000-230981) is formed by using a hole transfer material on plastic represented by polycarbonate or the like. It should be noted that these are mixed and are different from the conductive organic crystal (so-called conductive polymer) of the present invention. Moreover, in patent document 3 (Unexamined-Japanese-Patent No. 2000-230981), an organic film cannot be formed by application | coating. In the present invention, the electron blocking layer 22 is formed on the surface of the photoelectric conversion semiconductor layer 23 on the common electrode 21 side, and the surface on the side facing the active matrix substrate 1 opposite to the common electrode 21 side of the photoelectric conversion semiconductor layer 23. The hole blocking layer 24 is provided, but the hole blocking layer cannot be formed on the surface of the photoelectric conversion semiconductor layer on the common electrode side by replacing the formation surfaces of the electron blocking layer and the hole blocking layer. . That is, since the common electrode is a conductor, it is meaningless to form a hole blocking layer made of a conductive organic crystal on the common electrode of the conductor.

  In this embodiment, the radiation two-dimensional detector has a hole blocking layer 24 made of an organic crystal formed on the entire surface of the photoelectric conversion semiconductor layer 23 as shown in FIGS. In the case of a material having a relatively high film resistance of the organic crystal, the hole-blocking layer 24 is formed on the photoelectric conversion semiconductor layer by applying the above-described organic solvent in which the material is dissolved to the entire photoelectric conversion semiconductor layer 23. 23 can be formed on the entire surface.

  The present invention is not limited to the above-described embodiment, and can be modified as follows.

  (1) In the above-described embodiments, X-rays are taken as an example of radiation. However, the present invention is not particularly limited as exemplified by γ-rays, light, etc. as radiation other than X-rays.

  (2) In the embodiment described above, the hole blocking layer 24 made of an organic crystal was formed on the entire surface of the photoelectric conversion semiconductor layer 23 as shown in FIGS. 1 and 2, but as shown in FIG. In addition, the hole blocking layer 24 made of an organic crystal may be patterned on the photoelectric conversion semiconductor layer 23 for each pixel electrode 11. In the case of a material having a relatively low film resistance of the organic crystal, an image is blurred due to a current leakage in the lateral direction. Therefore, in order to prevent the image blur, if the ink jet is used as described above, the hole blocking layer 24 is formed as a pixel. A pattern can be formed for each electrode 11. This insulates adjacent pixels (lateral pixels).

  (3) Although the Schottky barrier is not formed in the above-described embodiment, a Schottky barrier may be formed by stacking low work function metals. For example, it is preferable that a metal having a work function of 4.5 eV or less is patterned for each pixel electrode in a hole blocking layer made of an organic crystal. Examples of the metal having a work function of 4.5 eV or less include Al (aluminum) and In (indium), as well as alkaline earth metals such as Mg (magnesium) and Ca (calcium). A Schottky barrier is formed by patterning such a low work function metal of 4.5 eV or less on the hole blocking layer for each pixel electrode. Moreover, as shown in the energy band of FIG. 4, holes can be blocked by an amount lower than the HOMO level of the organic crystal material, and the leakage current can be further reduced.

  (4) As an aspect of the above-described modification (3), as shown in FIG. 6, a metal having a work function of 4.5 eV or less is vacuum deposited on the hole blocking layer 24 formed on the entire surface of the photoelectric conversion semiconductor layer 23. The metal electrode 25 made of a metal having a work function of 4.5 eV or less may be formed on the hole blocking layer 24 for each pixel electrode 11 by coating by, for example.

  (5) As an aspect of the above-described modification (3), as shown in FIG. 7, a metal having a work function of 4.5 eV or less is applied to the hole blocking layer 24 patterned for each pixel electrode 11 by vacuum deposition or the like. By applying, a metal electrode 25 made of a metal having a work function of 4.5 eV or less may be patterned for each pixel electrode 11 together with the hole blocking layer 24.

  (6) The Schottky barrier (metal electrode 25 in FIGS. 6 and 7) was a metal having a work function of 4.5 eV or less. However, as shown in FIG. It may be a metal of 5 eV or less.

DESCRIPTION OF SYMBOLS 1 ... Active matrix substrate 11 ... Pixel electrode 2 ... Opposite substrate 21 ... Common electrode 22 ... Electron blocking layer 23 ... Photoelectric conversion semiconductor layer 24 ... Hole blocking layer 25 ... Metal electrode

Claims (6)

A radiation two-dimensional detector that detects radiation by converting radiation information into charge information upon incidence of radiation,
An active matrix substrate including each pixel electrode arranged in a two-dimensional matrix for reading out the charge information and a pixel arrangement layer for arranging them;
A common electrode that applies a bias voltage, and a photoelectric conversion semiconductor layer that converts information of the radiation into the charge information, and a counter substrate disposed opposite to the pixel electrode side of the active matrix substrate,
The counter substrate has an electron blocking layer on the surface of the photoelectric conversion semiconductor layer on the common electrode side, and a surface on the side facing the active matrix substrate opposite to the common electrode side of the photoelectric conversion semiconductor layer. And a hole blocking layer,
The hole blocking layer side surface of the counter substrate is electrically connected to the pixel electrode of the active matrix substrate for each pixel,
The photoelectric conversion semiconductor layer is formed of CdTe (cadmium telluride) or CdZnTe (cadmium zinc telluride),
The two-dimensional radiation detector, wherein the hole blocking layer is a conductive organic crystal. The radiation two-dimensional detector according to claim 1,
A radiation two-dimensional detector, wherein the LUMO level of the organic crystal is equivalent to the electron affinity of the CdTe or CdZnTe, and the HOMO level of the organic crystal is higher than the valence band level of the CdTe or CdZnTe. The radiation two-dimensional detector according to claim 1 or 2,
2. The radiation two-dimensional detector, wherein the organic crystal is PCBM, PTCDI, BCP or a dielectric thereof. The radiation two-dimensional detector according to any one of claims 1 to 3,
The two-dimensional radiation detector, wherein the hole blocking layer made of the organic crystal is formed on the entire surface of the photoelectric conversion semiconductor layer. The radiation two-dimensional detector according to any one of claims 1 to 3,
The radiation two-dimensional detector, wherein the hole blocking layer made of the organic crystal is patterned for each pixel electrode on the photoelectric conversion semiconductor layer. The radiation two-dimensional detector according to any one of claims 1 to 5,
A radiation two-dimensional detector, wherein a metal having a work function of 4.5 eV or less is patterned for each of the pixel electrodes in the hole blocking layer made of the organic crystal.

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