JP2015164158A - 半導体装置用積層構造体、半導体装置 - Google Patents
半導体装置用積層構造体、半導体装置 Download PDFInfo
- Publication number
- JP2015164158A JP2015164158A JP2014039652A JP2014039652A JP2015164158A JP 2015164158 A JP2015164158 A JP 2015164158A JP 2014039652 A JP2014039652 A JP 2014039652A JP 2014039652 A JP2014039652 A JP 2014039652A JP 2015164158 A JP2015164158 A JP 2015164158A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- oxide thin
- semiconductor device
- crystalline oxide
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000010409 thin film Substances 0.000 claims abstract description 67
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 16
- 229910052742 iron Inorganic materials 0.000 claims abstract description 16
- 239000010431 corundum Substances 0.000 claims description 8
- 229910052593 corundum Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 9
- 229910001195 gallium oxide Inorganic materials 0.000 description 9
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- 239000003595 mist Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- -1 aluminum compound Chemical class 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 150000002259 gallium compounds Chemical class 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000002472 indium compounds Chemical class 0.000 description 2
- 150000002506 iron compounds Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 1
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical class C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000011019 hematite Substances 0.000 description 1
- 229910052595 hematite Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- LIKBJVNGSGBSGK-UHFFFAOYSA-N iron(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Fe+3].[Fe+3] LIKBJVNGSGBSGK-UHFFFAOYSA-N 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical compound [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Compounds Of Iron (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014039652A JP2015164158A (ja) | 2014-02-28 | 2014-02-28 | 半導体装置用積層構造体、半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014039652A JP2015164158A (ja) | 2014-02-28 | 2014-02-28 | 半導体装置用積層構造体、半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015164158A true JP2015164158A (ja) | 2015-09-10 |
| JP2015164158A5 JP2015164158A5 (enExample) | 2017-03-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014039652A Pending JP2015164158A (ja) | 2014-02-28 | 2014-02-28 | 半導体装置用積層構造体、半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2015164158A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017069424A (ja) * | 2015-09-30 | 2017-04-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| JP2018082144A (ja) * | 2016-08-31 | 2018-05-24 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
-
2014
- 2014-02-28 JP JP2014039652A patent/JP2015164158A/ja active Pending
Non-Patent Citations (1)
| Title |
|---|
| KENTARO KANEKO,TAICHI NOMURA,ITSUHIRO KAKEYA,SHIZUO FUJITA: "Ｆａｂｒｉｃａｔｉｏｎ ｏｆ Ｈｉｇｈｌｙ Ｃｒｙｓｔａｌｌｉｎｅ Ｃｏｒｕｎｄｕｍ−Ｓｔｒｕｃｔｕ", ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＥＸＰＲＥＳＳ , vol. Ｅｘｐｒｅｓｓ２, JPN6017042376, 19 June 2009 (2009-06-19), JP, pages ０７５５０１ * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017069424A (ja) * | 2015-09-30 | 2017-04-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
| JP2018082144A (ja) * | 2016-08-31 | 2018-05-24 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
| JP6994181B2 (ja) | 2016-08-31 | 2022-02-04 | 株式会社Flosfia | 結晶性酸化物半導体膜および半導体装置 |
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