JP2015164158A - 半導体装置用積層構造体、半導体装置 - Google Patents

半導体装置用積層構造体、半導体装置 Download PDF

Info

Publication number
JP2015164158A
JP2015164158A JP2014039652A JP2014039652A JP2015164158A JP 2015164158 A JP2015164158 A JP 2015164158A JP 2014039652 A JP2014039652 A JP 2014039652A JP 2014039652 A JP2014039652 A JP 2014039652A JP 2015164158 A JP2015164158 A JP 2015164158A
Authority
JP
Japan
Prior art keywords
thin film
oxide thin
semiconductor device
crystalline oxide
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014039652A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015164158A5 (enExample
Inventor
真也 織田
Shinya Oda
真也 織田
俊実 人羅
Toshimi Hitora
俊実 人羅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Flosfia Inc
Original Assignee
Flosfia Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Flosfia Inc filed Critical Flosfia Inc
Priority to JP2014039652A priority Critical patent/JP2015164158A/ja
Publication of JP2015164158A publication Critical patent/JP2015164158A/ja
Publication of JP2015164158A5 publication Critical patent/JP2015164158A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Thin Film Transistor (AREA)
  • Compounds Of Iron (AREA)
JP2014039652A 2014-02-28 2014-02-28 半導体装置用積層構造体、半導体装置 Pending JP2015164158A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2014039652A JP2015164158A (ja) 2014-02-28 2014-02-28 半導体装置用積層構造体、半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014039652A JP2015164158A (ja) 2014-02-28 2014-02-28 半導体装置用積層構造体、半導体装置

Publications (2)

Publication Number Publication Date
JP2015164158A true JP2015164158A (ja) 2015-09-10
JP2015164158A5 JP2015164158A5 (enExample) 2017-03-16

Family

ID=54186989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014039652A Pending JP2015164158A (ja) 2014-02-28 2014-02-28 半導体装置用積層構造体、半導体装置

Country Status (1)

Country Link
JP (1) JP2015164158A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069424A (ja) * 2015-09-30 2017-04-06 株式会社Flosfia 結晶性半導体膜および半導体装置
JP2018082144A (ja) * 2016-08-31 2018-05-24 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
KENTARO KANEKO,TAICHI NOMURA,ITSUHIRO KAKEYA,SHIZUO FUJITA: "Ｆａｂｒｉｃａｔｉｏｎ ｏｆ Ｈｉｇｈｌｙ Ｃｒｙｓｔａｌｌｉｎｅ Ｃｏｒｕｎｄｕｍ−Ｓｔｒｕｃｔｕ", ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＥＸＰＲＥＳＳ , vol. Ｅｘｐｒｅｓｓ２, JPN6017042376, 19 June 2009 (2009-06-19), JP, pages ０７５５０１ *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069424A (ja) * 2015-09-30 2017-04-06 株式会社Flosfia 結晶性半導体膜および半導体装置
JP2018082144A (ja) * 2016-08-31 2018-05-24 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置
JP6994181B2 (ja) 2016-08-31 2022-02-04 株式会社Flosfia 結晶性酸化物半導体膜および半導体装置

Similar Documents

Publication Publication Date Title
JP6539920B2 (ja) 結晶性酸化物薄膜、半導体装置
JP7048864B2 (ja) 半導体装置
JP6539921B2 (ja) 結晶性酸化物半導体薄膜、半導体装置
TWI607511B (zh) Crystalline multilayer structure, semiconductor device
JP2015070248A (ja) 酸化物薄膜及びその製造方法
JP2015196603A (ja) 結晶性積層構造体、半導体装置
JP2022172066A (ja) 結晶性酸化物半導体膜および半導体装置
JP2019009405A (ja) 積層構造体および半導体装置
JP2017005147A (ja) 結晶性半導体膜、積層構造体および半導体装置
JP2017005146A (ja) 結晶性半導体膜、積層構造体および半導体装置
JP2016199466A (ja) 積層構造体および半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170206

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170206

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20171114

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180109

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20180125

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20180320