JP2015161644A - Magnetic force microscope probe and manufacturing method for the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a magnetic force microscope probe and a manufacturing method therefor capable of sufficiently improving a magnetic coercive force.SOLUTION: As a first approach, a magnetic thin film 31 of, for example, Fe-Pt formed on a probe material 10 is formed to contain a nonmagnetic substance (for example, MgO), so that magnetic crystal grains are allowed to be present in a nonmagnetic grain boundary in a dispersed, isolated state. As a second approach, the magnetic thin film layer 31 is heated slowly up to a predetermined temperature by starting low temperature rise heating during or after film formation, so as to easily magnetize a probe 1 in an in-plane direction rather than a perpendicular direction of a magnetic thin film (to easily magnetize the probe 1 in the in-plane direction of the magnetic thin film, that is, a direction generally along a longitudinal direction of the probe 1). As a third approach, energy is applied to the magnetic thin film layer 31 by irradiating the magnetic thin film layer 31 with plasmas at a time of forming the magnetic thin film layer 31, so as to accelerate transforming atoms constituting the thin film into a regular structure. One arbitrary combination or a plurality of arbitrary combinations of the first to third approaches may be appropriately selected.

Description

  The present invention relates to a probe for a magnetic force microscope and a manufacturing method thereof.

  A magnetic force microscope (MFM) is used to measure a magnetization pattern corresponding to magnetic information. The magnetic force microscope is provided with a magnetic probe, and the tip of the magnetic probe is brought close to a magnetic sample as a medium to be measured, and the magnetic force acting between the magnetic moment of the magnetic probe and the magnetic sample is measured. Measurement of the magnetization pattern and the like is performed by directly detecting the target action.

As a magnetic probe of this magnetic force microscope, as shown in Patent Document 1, an SiO2 layer and a magnetic thin film layer (iron (Fe) -platinum (Pt)) are sequentially formed on a probe material made of a nonmagnetic material Si. In the manufacture of the magnetic probe, a silicon oxide (SiO 2) layer and a magnetic thin film layer are sequentially formed on a probe material made of Si, and thereafter In order to transform the magnetic thin film layer into an ordered alloy film (an Al-type disordered FePt alloy film is transformed into an L10-type FePt ordered alloy film), a heat treatment step is required. For this reason, in this magnetic probe, the SiO2 layer is formed on the probe material prior to the formation of the magnetic thin film layer in the manufacturing stage. The magnetic properties of the magnetic thin film layer can be prevented from deteriorating due to reaction and alloying with the thin film layer. Based on the magnetic thin film layer, the magnetic pole density at the tip of the probe is increased by obtaining a large coercive force and a large saturation magnetic flux density. Can do. As a result, the spatial resolution can be improved.
JP 2008-209276 A

  Recently, many magnetic recording heads, permanent magnets, and the like, which are measurement targets of a magnetic force microscope, generate an extremely strong magnetic field. For this reason, if a probe having a small coercive force is used, problems such as distortion of the obtained image and a decrease in spatial resolution may occur, and the coercive force of the probe for a magnetic force microscope is sufficient. It is desired to make it larger.

  However, the coercive force in the longitudinal direction of the conventional magnetic force microscope probe is about 14 to 15 kOe at the maximum, and it is difficult to obtain a larger coercive force.

  The present invention has been made in view of the circumstances as described above, and a first object thereof is to provide a method of manufacturing a probe for a magnetic force microscope that can sufficiently increase the coercive force. .

  A second object of the present invention is to provide a magnetic force microscope probe having a sufficiently increased coercive force.

  In order to achieve the first object, the following solution principle is adopted in the manufacturing method of the present invention. That is, as a first method, the magnetic thin film layer formed on the probe is formed so as to contain a nonmagnetic substance, so that the magnetic crystal grains are dispersed and isolated in the nonmagnetic grain boundary region. I am trying to make it. That is, they are not formed as a large group of magnets, but are formed as an aggregate of a large number of fine magnets made of isolated magnetic crystal particles. As a second method, the magnetic thin film layer containing the impurity is slowly raised to a predetermined temperature by slow heating to make it easier to be magnetized in the in-film direction than in the direction perpendicular to the film surface of the magnetic thin film. (Promotes regular transformation while maintaining the crystal orientation of the magnetic crystal grains to be random, and makes the magnetization of the probe easy to be magnetized in the in-plane direction that is substantially along the longitudinal direction of the probe. ). As a third technique, when forming a magnetic thin film layer containing a non-magnetic substance, energy is imparted by plasma irradiation to promote the ordered structure of atoms constituting the thin film (promotion of L10 ordering). ). In the first to third methods, any one or a plurality of combinations can be appropriately selected. The coercive force can be further increased by a synergistic effect by combining any two methods, and particularly, a very high coercive force can be obtained by the synergistic effect by using all three methods.

Specifically, in the method for manufacturing a probe for a magnetic force microscope according to the present invention, the following first solution is adopted. That is, as described in claim 1,
Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer containing a nonmagnetic material on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
It is supposed to be equipped with. According to the above solution, the magnetic crystal grains are dispersed in the nonmagnetic grain boundary region and exist in an isolated state, so that a large number of fine particles that can easily obtain a large coercive force compared to a large mass of magnets. As a result, a large coercive force can be obtained.

Preferred embodiments based on the first solution are as described in claims 2 to 4 and claim 8 in claims. That is,
In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. (Claim 2). In this case, the magnetization of the probe is more easily magnetized in the in-film direction, which is substantially along the longitudinal direction of the probe, rather than in the direction perpendicular to the film surface, and the coercive force (particularly the required longitudinal direction of the probe). It is possible to further increase the coercivity.

  The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film (corresponding to claim 3). In this case, by applying energy by plasma irradiation, migration by ion bombardment is caused to atoms during film formation, and the regular structure (L10 regularization) of atoms constituting the thin film can be promoted, and the coercive force is further increased. It becomes possible.

In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. Made by
The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film.
(Corresponding to claim 4). In this case, the effects corresponding to claims 2 and 3 can be obtained together, and the coercive force can be greatly increased (it is possible to obtain a very large coercive force of 20 kOe or more. ).

The material of the magnetic thin film layer is at least one selected from Fe—Pt, Co—Pt, Fe—Pd, and Co—Cr—Pt,
The material of the non-magnetic substance is Si oxide, Ti oxide, W oxide, Cr oxide, Co oxide, Ta oxide, B oxide, Mg oxide, Ce oxide, Y oxide, Ni oxide One or more selected from materials, Al oxides, Ru oxides, and carbon,
This is done (corresponding to claim 8). In this case, the specific thing of a magnetic thin film layer and a nonmagnetic substance is provided.

In order to achieve the first object, the following second solution is adopted in the present invention. That is, as described in claim 5,
Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
With
In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. Done by
It is like that. According to the above solution, the magnetization of the probe is more easily magnetized in the in-plane direction of the magnetic thin film, which is substantially along the longitudinal direction of the probe, rather than in the direction perpendicular to the film surface of the magnetic thin film. (Especially required coercive force in the longitudinal direction of the probe) can be increased.

A preferred mode based on the second solution is as described in claim 6 in the scope of claims. That is,
The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film (corresponding to claim 6). In this case, by applying energy by plasma irradiation, migration by ion bombardment is caused to atoms during film formation, and the regular structure (L10 regularization) of atoms constituting the thin film can be promoted, and the coercive force is further increased. It becomes possible.

In order to achieve the first object, the following third solution is adopted in the present invention. That is, as described in claim 7,
Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
With
The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film.
It is like that. According to the above-described solution technique, by applying energy by plasma irradiation, migration by ion bombardment is caused to atoms during film formation, and the regular structuring (L10 regularization) of atoms constituting the thin film can be promoted. Magnetic force can be increased.

In order to achieve the second object, the following solution is adopted for the magnetic force microscope probe according to the present invention. That is, as described in claim 9,
A diffusion prevention layer is formed on the probe material made of silicon (Si),
A magnetic thin film layer containing a non-magnetic substance is formed on the diffusion preventing layer,
The magnetic thin film layer is made to exist in an isolated state in which magnetic crystal grains are dispersed in a nonmagnetic grain boundary region.
(Corresponding to claim 9). In this case, a probe that is manufactured by at least a manufacturing method corresponding to claims 1 to 4 and 8 and can have a large coercive force is provided.

A preferred mode based on the above solution is as described in claim 10 in the scope of claims. That is,
The magnetic crystal grains are controlled to be regularly transformed and oriented so that they are more easily magnetized in the in-plane direction than in the direction perpendicular to the plane of the magnetic thin film (corresponding to claim 10). In this case, a probe that can have an even larger coercive force is provided.

  According to the present invention, a probe having a sufficiently large coercive force can be provided, and an image obtained using a magnetic force microscope can be sharpened and spatial resolution can be improved.

Side surface sectional drawing which shows an example of the probe by this invention. The figure which looked at the probe of Drawing 1 from the tip side. The figure which shows the manufacturing process of a probe. The figure which shows simply the example of an apparatus which performs the film-forming and plasma irradiation of the magnetic thin film layer containing a nonmagnetic substance. The figure which shows experimental data. The figure which shows experimental data.

  In FIG. 1, 1 is a probe for a magnetic force microscope. The probe 1 projects from the tip of a cantilever 2 made of, for example, silicon (Si) so as to be orthogonal to the extending direction. The shape of the probe 1 is set so as to be pointed toward the tip, and in the embodiment, it is formed as a triangular pyramid shape. The shape of the probe may be another pyramid shape such as a quadrangular pyramid, or may be a cone shape.

  The probe 1 is manufactured according to the process shown in FIG. Of the devices used in this manufacturing process, an example of a device for forming the diffusion prevention layer 21 and the magnetic thin film layer 31 containing a nonmagnetic substance will be described with reference to FIG. In FIG. 4, 41 is a sealed chamber (a chamber for a magnetron sputtering apparatus). In this chamber 41, a rotation holding table 42 for holding the probe material 10 is provided. An Fe—Pt alloy target 43 and an MgO target 44 are disposed in the chamber 41. The chamber 41 is supplied with argon gas in a vacuumed state so that the probe material 10 can be sputtered and irradiated with plasma. The distance between each target 43, 44 and the probe material 10 is about 120 mm.

  The Fe—Pt alloy target 43 is connected to a DC power source for sputtering. The MgO target 44 is connected to a high frequency (for example, RF) power source for sputtering. Further, a high frequency (for example, VHF) power source for plasma irradiation is connected to the rotation holding table 42 (that is, the probe material 10).

  The frequency of the high frequency power source for the MgO target 44 is, for example, 13.56 MHz, and the frequency of the high frequency power source for the probe material 10 is, for example, 40.68 MHz. The applied power to each of the targets 42 and 44 is large (for example, 100 W) so that high-speed argon ions for sputtering are directed to the targets 43 and 44. On the other hand, the applied power to the probe material 10 is low (for example, 15 to 20 W) so that low-speed argon ions for plasma irradiation are directed to the probe material 10.

  As described above, the power applied to each of the targets 43 and 44 is increased, while the power applied to the probe material 10 is decreased. Further, the frequency for the MgO target 44 and the frequency for the probe material 10 are greatly different. The distance between the targets 43 and 44 and the probe material 10 is not so short. As a result, completely different plasma is generated on the surface of each target 43, 44 and the surface of the probe material 10, and a sputtering phenomenon is generated in each target 43, 44 due to collision of high-speed argon ions. The needle material 10 is irradiated with plasma by collision of low-speed argon ions.

  On the premise of the above, first, a probe material 10 made of Si is prepared in step S1. In this embodiment, the probe material 10 is attached to the tip of the cantilever 2 in advance, and thereafter, the probe material 10 and the cantilever 2 are handled integrally in a later process. Specifically, the probe material 10 made of Si is manufactured from an Si single crystal wafer by anisotropic etching, but not only Si is used as a material, but also in order to ensure conductivity. May contain an impurity (impurity semiconductor). And the probe raw material 10 (and the integrated object of the cantilever 2) is hold | maintained at the rotation holding stand 41 shown in FIG. The rotation holding table 42 is rotated at a speed of, for example, 10 rpm during film formation described later.

  Next, in step S2, only the MgO target 44 is selected as a target (no power applied to the Fe—Pt target 43), and sputtering is performed on the probe material 10 at room temperature (in the embodiment, Ar is used). Use). Thereby, the diffusion preventing layer 21 made of the MgO layer is formed. The diffusion preventing layer 21 is formed with a thickness of 5 nm, for example. In addition, step S2 is performed in a state where power for plasma irradiation to the probe material 10 is not applied.

  In step S3, the magnetic thin film layer 31 containing an impurity made of a nonmagnetic material is formed on the diffusion prevention layer 21 (MgO layer) at room temperature. That is, using both the Fe—Pt target 43 and the MgO target 44 as the target, two-layer sputtering is simultaneously performed. During this film formation, MgO, which is a nonmagnetic substance, does not dissolve in Fe—Pt, and Fe—Pt magnetic crystal particles are dispersed and isolated in the nonmagnetic grain boundary region of MgO. The Rukoto. That is, when a subsequent magnetization is performed, a structure is formed to be formed as an aggregate of a large number of fine magnets that easily obtain a large coercive force (granular structure or similar structure). The magnetic thin film layer 31 containing a nonmagnetic substance is formed to a thickness of 20 nm, for example (the time required for film formation of this thickness is 2 to 3 minutes). Alternatively, MgO sputtering (film formation) and Fe—Pt sputtering (film formation) may be alternately performed to finally form the magnetic thin film layer 31 containing a nonmagnetic substance. However, in order to reliably form a state in which the magnetic crystal grains of Fe—Pt are dispersed and isolated in the nonmagnetic grain boundary region of MgO, simultaneous film formation is preferable.

  During the formation of the magnetic thin film layer 31 containing impurities composed of MgO, power for plasma irradiation is applied to the probe material 10, and plasma irradiation by collision of low-speed argon ions is performed. By applying energy by this plasma irradiation, migration by ion bombardment can be caused to atoms during film formation, and the regular structure (L10 regularization) of atoms constituting the thin film can be promoted. It is possible to further increase the coercive force of. The reason why plasma irradiation is performed with low power (low energy) is to prevent the thin film from being destroyed.

  In step S4, the integrated product of the probe material 10 and the cantilever 2 is taken out from the chamber 41 and heat-treated by a known heating device. This heat treatment is slowly increased to a predetermined temperature (for example, 750 ° C.) at a low speed and, after reaching the predetermined temperature, is maintained at the predetermined temperature for a predetermined time (for example, 120 minutes). The slow temperature increase at a low speed is a process for facilitating magnetization in the in-plane direction of the magnetic thin film, which is substantially along the longitudinal direction of the probe 1 rather than the vertical direction of the magnetic thin film surface ( (Promoting regular transformation while maintaining a random orientation of crystal orientation). The rate of temperature rise can be set to 0.1 ° C./second to 1.0 ° C./second, but can be appropriately set within the range of 0.01 ° C./second to 3 ° C./second. This rate of temperature rise is only an example, and the slower the rate of temperature rise (lower), the better the coercive force after magnetization, but there is a limit to the increase in coercive force even if it is too slow. In order to reduce productivity, it is preferable that the minimum rate of temperature rise is 0.01 ° C./second to 0.1 ° C./second or more. The maximum rate of temperature rise is preferably 3.0 ° C./second or less, and preferably 1.0 ° C./second or less, in order to ensure that the magnetic thin film is easily magnetized in the in-plane direction.

In step S5, the probe 1 is magnetized in the longitudinal direction. This magnetization can be performed by a known appropriate method, but the magnetization is performed with a sufficiently large magnetic field in anticipation that the coercive force (particularly the longitudinal coercive force) of the probe 1 is 20 kOe or more. become. The probe 1 after undergoing the above-described steps is as follows. That is,
A diffusion prevention layer is formed on the probe material made of silicon (Si),
A magnetic thin film layer containing a non-magnetic substance is formed on the diffusion preventing layer,
The magnetic thin film layer is made to exist in a state where magnetic crystal grains are dispersed and isolated in a nonmagnetic grain boundary region,
Regular transformation and orientation control are performed so that the magnetic crystal particles are more easily magnetized in the in-film direction than in the film surface vertical direction,
After magnetization, it has a very large coercive force.

  5 and 6 show the results of experimental examples to which the present invention is applied. “Hc in-plane” shown in row J indicates the required coercivity in the in-plane direction of the magnetic thin film. Further, “Hc perpendicular” shown in the K column is the coercive force in the direction perpendicular to the film surface of the magnetic thin film. In the present invention, it is important to increase the coercive force “in the Hc plane” shown in the J row. In the experimental results shown in FIGS. 5 and 6, the thickness of the diffusion preventing layer 21 is 5 nm, and the thickness of the magnetic thin film layer 31 containing a nonmagnetic substance is 20 nm. In the figure, “MgO” in the E row is a ratio (volume ratio) contained in the magnetic thin film layer 31 as a nonmagnetic substance, and “VHF” in the F row is plasma during film formation of the magnetic thin film layer 31. The magnitude of irradiation energy is W (watts).

  The numerical value “14.4” in the “Hc plane” shown in column J-5th row corresponds to the coercive force of the conventional probe. In other words, the experimental example of column J-5 rows is rapid heating (25 ° C./sec) that is more easily magnetized in the direction perpendicular to the film surface than in the in-plane direction of the magnetic thin film, and the magnetic thin film layer contains a non-magnetic substance. There is no (no isolation of the magnetic crystal), and no energy is applied by plasma irradiation during the formation of the magnetic thin film layer.

  Focusing on the values in the J column, the dependence of the nonmagnetic substance addition amount on the 5th to 16th rows will be considered. In any case of rapid temperature rising heating, slow temperature rising heating, and plasma irradiation, the numerical value of J example increases as the impurity ratio increases. It is shown that adding a non-magnetic substance to isolate the magnetic crystal grains is effective in increasing the coercive force. It is understood that the degree of increase in coercive force is more effective by performing heating at a low temperature, and in addition to this, it is more effective by applying energy by plasma irradiation during film formation. The Incidentally, the numerical value of “22.3” in J example-16 line is a result of a dramatic increase in coercive force that cannot be assumed conventionally. The content ratio (volume ratio) of the non-magnetic substance is preferably as large as possible within a range of less than 50%, but at least 10% is sufficient, and is preferably selected within the range of 35% ± 10%. .

  Regarding the dependency of the heating rate shown in the 18th to 26th rows, it is understood that the numerical value of the J column increases as the heating rate becomes slower. Although the rate of temperature increase is preferably as low as possible, in view of productivity, it is preferably 0.01 ° C./second or more, preferably 0.03 ° C./second or more, more preferably 0.1 ° C./second or more. In addition, the upper limit value of the temperature rising rate may be 3.0 ° C./second or less, and preferably 1.0 ° C./second or less. This is because the temperature rise at such a low speed facilitates magnetization in the in-film direction rather than in the direction perpendicular to the film surface of the magnetic thin film.

  Here, in the case of heating at a low temperature, the crystal orientation does not change (although it remains random) while being ordered. Thereby, the magnetic film becomes an in-plane magnetization film. On the other hand, in the case of rapid heating and heating, the crystal orientation changes while making a regular structure (changes in the vertical direction of the magnetic thin film), so in order to have a large magnetic anisotropy in the vertical direction, This results in a perpendicular magnetization film.

  As for the predetermined temperature held for the predetermined time shown in the 27th to 38th rows, the numerical value of the J column increases as the temperature toward 750 ° C. increases, but when the temperature reaches 800 ° C., the numerical value of the J column decreases. This differs depending on the material constituting the magnetic thin film layer 31 used. However, when Fe—Pt is used, the numerical value of the J row reaches a peak value around 750 degrees, and thus, for example, a range of 750 ± 20 ° C. It is preferable to set to.

  It is understood that as the time for maintaining the predetermined temperature shown in the 39th to 47th lines, the numerical value of the J column increases as the time increases. In consideration of productivity, it is preferable to select appropriately within the range of 60 minutes to 300 minutes.

  Regarding the dependence of power (applied energy) upon plasma irradiation shown in lines 49 to 63, the numerical value of the J column is increased when the power is increased to a certain power value, but the numerical value of the J column is higher than the power value. It is preferable to select the optimum power value because it decreases (if the plasma irradiation is performed with high power (high energy), the thin film is destroyed). Note that the experimental conditions for the J column-16 row and the J column-63 row are the same.

  Although the embodiment has been described above, the present invention is not limited to the embodiment, and can be appropriately changed within the scope described in the scope of claims. For example, the invention includes the following cases. . The material constituting the diffusion prevention layer 21 can be selected from appropriate materials conventionally used. For example, Si constituting the probe material 10 can be constituted by, for example, plasma oxidation treatment to form SiO. When forming the magnetic thin film layer 31 containing a nonmagnetic substance, three layers of Fe, Pt, and MgO may be provided as targets and simultaneous ternary film formation may be performed. The heat treatment in step SS4 may be performed during the formation of the magnetic thin film layer 31 containing the nonmagnetic substance (slow temperature rising heating is started during the formation of the magnetic thin film layer 31 containing the nonmagnetic substance).

  As a magnetic material constituting the magnetic thin film layer 31, an appropriate material can be selected. For example, at least one of Fe—Pt, Co—Pt, Fe—Pd, and Co—Cr—Pt can be used. Nonmagnetic substances include Mg oxide, Si oxide, Ti oxide, W oxide, Cr oxide, Co oxide, Ta oxide, B oxide, Mg oxide, Ce oxide, and Y oxide. And at least one of Ni oxide, Al oxide, Ru oxide, and carbon can be used. When MgO is used, it is preferable in view of the high oxygen affinity of Mg and the insolubility of Mg—Fe and Mg—Pt. In addition, when carbon (C) is used, it is preferable in that it is easily phase-separated from the metal and the film formation rate is faster than that of MgO.

  First method described above (by forming the magnetic thin film layer formed on the probe as containing a non-magnetic substance, the magnetic crystal grains are dispersed in the non-magnetic grain boundary region and exist in an isolated state. Second method (the magnetic thin film layer is slowly raised to a predetermined temperature by low temperature heating during film formation or after film formation so that the magnetic thin film layer is in the in-film direction rather than in the direction perpendicular to the film surface of the magnetic thin film. The third method (enhance the regular structure of atoms constituting the thin film by applying energy by plasma irradiation when forming the magnetic thin film layer). Of these, any one or a plurality of combinations may be adopted. In this case, in particular, by adopting all three methods, it becomes possible to finally obtain a large coercive force exceeding 20 kOe. Of course, the object of the present invention is not limited to what is explicitly stated, but also implicitly includes providing what is substantially preferred or expressed as an advantage.

  The image obtained by the magnetic force microscope can be sharpened and the spatial resolution can be improved.

1: Probe 2: Cantilever 10: Probe material 21: Diffusion prevention layer 31: Magnetic thin film layer 41: Chamber 42: Rotation holding base 43: Fe—Pt target 44: MgO target

Claims (10)

Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer containing a nonmagnetic material on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
A method for manufacturing a probe for a magnetic force microscope, comprising: In claim 1,
In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. A method for manufacturing a probe for a magnetic force microscope, characterized in that the method is performed by: In claim 1,
A method of manufacturing a probe for a magnetic force microscope, wherein the magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film. In claim 1,
In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. Made by
The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film.
A method for manufacturing a probe for a magnetic force microscope. Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
With
In the heat treatment, the magnetic thin film layer is heated to a predetermined temperature at a low temperature so that the magnetic thin film layer is more easily magnetized in the in-plane direction than in the direction perpendicular to the film surface of the magnetic thin film, and then held at the predetermined temperature for a predetermined time. Done by
A method for manufacturing a probe for a magnetic force microscope. In claim 5,
A method of manufacturing a probe for a magnetic force microscope, wherein the magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film. Forming a diffusion preventing layer on a probe material made of silicon (Si);
Forming a magnetic thin film layer on the diffusion preventing layer;
Performing a heat treatment of the magnetic thin film layer;
With
The magnetic thin film layer is formed while being irradiated with plasma so as to promote the regular structure of atoms constituting the thin film.
A method for manufacturing a probe for a magnetic force microscope. In any one of Claims 1 thru | or a claim,
The material of the magnetic thin film layer is at least one selected from Fe—Pt, Co—Pt, Fe—Pd, and Co—Cr—Pt,
The material of the non-magnetic substance is Si oxide, Ti oxide, W oxide, Cr oxide, Co oxide, Ta oxide, B oxide, Mg oxide, Ce oxide, Y oxide, Ni oxide One or more selected from materials, Al oxides, Ru oxides, and carbon,
A method for manufacturing a probe for a magnetic force microscope. A diffusion prevention layer is formed on the probe material made of silicon (Si),
A magnetic thin film layer containing a non-magnetic substance is formed on the diffusion preventing layer,
The magnetic thin film layer is made to exist in an isolated state in which magnetic crystal grains are dispersed in a nonmagnetic grain boundary region.
A probe for a magnetic force microscope. In claim 9,
A probe for a magnetic force microscope, wherein the magnetic crystal grains are regularly transformed and oriented so that the magnetic crystal particles are more easily magnetized in the in-plane direction than in the direction perpendicular to the plane of the magnetic thin film.

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