JP2015149671A - High frequency module and manufacturing method of the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To inhibit deterioration of high frequency characteristics when a high frequency signal is transmitted between a wave guide and a semiconductor chip.SOLUTION: A high frequency module includes: a metal housing 2 having a wave guide 1; and a package part 6 having a back-short 3 positioned on an extension of the wave guide, a semiconductor chip 4, and an antenna coupler 5 positioned between the wave guide and the back-short, the package part 6 where the back-short and the semiconductor chip are integrated by a resin 7 and the antenna coupler and the semiconductor chip are electrically connected by re-wiring track 8.

Description

  The present invention relates to a high-frequency module and a manufacturing method thereof.

  Coaxial connector cables currently on the market have an upper limit of 110 GHz, and waveguides are used for transmission of high-frequency signals exceeding the upper limit. Also, a microstrip line substrate is used to convert a signal to a planar transmission line for transmitting high frequency signals between the waveguide and the semiconductor chip. That is, a waveguide-microstrip line converter is used. Then, the semiconductor chip is mounted, and the semiconductor chip and the microstrip line substrate are connected by wire bonding or flip chip bonding.

  For example, as shown in FIGS. 17A and 17B, the microstrip line substrate 102 protrudes into the waveguide 101 in a space continuous with the waveguide 101 inside the metal housing 100. Is implemented. Further, a semiconductor chip 103 is mounted and connected by wire bonding or flip chip bonding.

JP-A-11-135660 Japanese Examined Patent Publication No. 64-2281 Japanese Patent Laid-Open No. 2002-16408 JP 2010-273029 A JP-A-10-303614 JP 2006-304113 A JP 2011-234089 A JP-A-10-303613 International Publication No. 2009/123233

However, in the configuration shown in FIGS. 17A and 17B, a high-frequency signal is transmitted via a microstrip line and wire bonding or flip-chip bonding, so that a high frequency is generated between the waveguide and the semiconductor chip. Deterioration of high-frequency characteristics during signal transmission is large.
For example, the length of the microstrip line extending from the waveguide to the semiconductor chip is inevitably long, and the signal loss due to the line resistance is large because the microstrip line is connected to the semiconductor chip by wire bonding or flip chip bonding. . Further, the wavelength becomes shorter as the transmitted signal becomes higher in frequency. However, when the length of the microstrip line to the semiconductor chip becomes 1/4 or more of the wavelength, the waveform is deteriorated due to signal reflection. For this reason, the deterioration of the high frequency characteristics when transmitting a high frequency signal between the waveguide and the semiconductor chip is large.

  Therefore, it is desired to suppress deterioration of the high frequency characteristics when transmitting a high frequency signal between the waveguide and the semiconductor chip.

  The high-frequency module includes a metal housing having a waveguide, a back short located on the extension of the waveguide, a semiconductor chip, and an antenna coupler located between the waveguide and the back short. The back short circuit and the semiconductor chip are integrated with a resin, and the antenna coupler and the semiconductor chip are provided with a package part electrically connected by a rewiring line.

  The method of manufacturing the high-frequency module includes a step of manufacturing a package portion having a back short, a semiconductor chip, and an antenna coupler, a package portion in a metal housing having a waveguide, and the back short being a waveguide. And mounting the antenna coupler so that the antenna coupler is positioned between the waveguide and the back short, and the process of manufacturing the package unit integrates the back short and the semiconductor chip with resin. And a step of providing a redistribution line so that the antenna coupler and the semiconductor chip are electrically connected to each other.

  Therefore, according to the present high-frequency module and its manufacturing method, there is an advantage that it is possible to suppress deterioration of high-frequency characteristics when a high-frequency signal is transmitted between the waveguide and the semiconductor chip.

It is typical sectional drawing which shows the structure of the high frequency module concerning 1st Embodiment. (A), (B) is a schematic diagram which shows the structure of the package part with which the high frequency module concerning 1st Embodiment is equipped, (A) is a top view, (B) is A of (A). It is sectional drawing which follows the -A 'line. (A), (B) is a schematic diagram which shows the structure of the package part of the 1st modification with which the high frequency module concerning 1st Embodiment is equipped, (A) is a top view, (B) is It is sectional drawing which follows the AA 'line of (A). (A), (B) is a schematic diagram which shows the structure of the package part of the 2nd modification with which the high frequency module concerning 1st Embodiment is equipped, (A) is a top view, (B) It is sectional drawing which follows the AA 'line of (A). It is typical sectional drawing which shows the structure of the package part of the other modification with which the high frequency module concerning 1st Embodiment is equipped. (A), (B) is a schematic diagram for demonstrating the manufacturing method (the manufacturing method of a package part) of the high frequency module concerning 1st Embodiment, (A) is a top view, (B) FIG. 4 is a cross-sectional view taken along line AA ′ in FIG. (A)-(C) are typical sectional drawings for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 1st Embodiment. It is a typical sectional view showing the composition of the high frequency module concerning a 2nd embodiment. It is typical sectional drawing which shows the structure of the dielectric film which has a conductor layer which comprises the package part of the high frequency module concerning 2nd Embodiment. (A)-(C) are typical sectional drawings for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 2nd Embodiment. (A)-(C) are typical sectional drawings for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 2nd Embodiment. (A), (B) is typical sectional drawing for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 2nd Embodiment. (A), (B) is a schematic diagram which shows the structure of the high frequency module concerning 3rd Embodiment, (A) is sectional drawing, (B) is a partial perspective view. (A)-(L) is a typical perspective view which shows the structural example of the dielectric material support member with which the package part of the high frequency module concerning 3rd Embodiment is equipped. (A)-(E) are typical sectional drawings for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 3rd Embodiment. (A)-(F) is a schematic diagram for demonstrating the manufacturing method (manufacturing method of a package part) of the high frequency module concerning 3rd Embodiment, Comprising: (A)-(E) are sectional drawings. , (F) is a perspective view. (A), (B) is a schematic cross-sectional view showing the configuration of a conventional high-frequency module, (A) shows the case where wire bonding is used, and (B) uses flip-chip bonding. Shows the case.

Hereinafter, a high-frequency module and a manufacturing method thereof according to an embodiment of the present invention will be described with reference to the drawings.
[First Embodiment]
First, the high-frequency module and the manufacturing method thereof according to the first embodiment will be described with reference to FIGS.

The high-frequency module according to the present embodiment is a high-frequency module mounted on a radar, a sensor, or a wireless communication system that uses high-frequency waves such as millimeter waves and terahertz waves.
As shown in FIG. 1, the high frequency module of the present embodiment includes a metal housing 2 having a waveguide 1, a back short 3, a semiconductor chip 4, and a package unit 6 having an antenna coupler 5.

Here, the package unit 6 includes a back short circuit 3 positioned on the extension of the waveguide 1, a semiconductor chip 4, and an antenna coupler 5 positioned between the waveguide 1 and the back short circuit 3. Further, the back short 3 and the semiconductor chip 4 are integrated with a resin 7. The antenna coupler 5 and the semiconductor chip 4 are electrically connected by a rewiring line 8.
Thus, the package part 6 integrated with the resin 7 and connected by the redistribution line 8 is located in the metal housing 2 having the waveguide 1, the back short 3 is located on the extension of the waveguide 1, and The antenna coupler 5 is attached so as to be positioned between the waveguide 1 and the back short 3.

  In the present embodiment, as shown in FIGS. 1, 2A, and 2B, the back short 3 is a back conductor layer 9A provided on the back surface of a multilayer dielectric substrate 9 (eg, quartz). is there. The antenna coupler 5 is a surface conductor layer 9 </ b> B provided on the surface opposite to the back surface of the multilayer dielectric substrate 9. That is, the package unit 6 includes a multilayer dielectric substrate 9 (passive element; passive component) including a back conductor layer 9A that functions as the back short 3 and a front conductor layer 9B that functions as the antenna coupler 5.

In this case, the distance between the antenna coupler 5 and the back short 3 is accurately set to 1/4 (λ / 4) of the wavelength λ of the high-frequency signal to be transmitted, depending on the thickness and pattern accuracy of the multilayer dielectric substrate 9. Is done. Here, the back short 3 is a ground plane away from the antenna coupler 5 by λ / 4 on the back side of the antenna coupler 5.
The multilayer dielectric substrate 9 and the semiconductor chip 4 are integrated with a resin 7.

  In the present embodiment, the redistribution line 8 is constituted by a line conductor 12 electrically connected to the semiconductor chip 4 via a via 11 provided in the resin layer 10 formed on the resin 7. . Here, the line conductor 12 as the redistribution line 8 is electrically connected to the semiconductor chip 4 through the via 11, and is connected to the antenna coupler 5 (here, the multilayer dielectric substrate 9 through the via 19). It is electrically connected to the surface conductor layer 9B). The resin layer 10 is a photosensitive resin layer. The line conductor 12 is a metal wiring made of a metal such as copper.

The redistribution line 8 having such a configuration may be formed by plating using, for example, a semi-additive method, or may be formed by using a metal paste (for example, copper paste or silver paste) by using an inkjet method. However, in consideration of cost and mounting accuracy, it is preferable to form by plating using a semi-additive method.
In this way, the multilayer dielectric substrate 9 and the semiconductor chip 4 are embedded with the mold resin 7 and these positions are fixed and integrated, and a redistribution line 8 is formed thereon to form the antenna coupler 5 and the semiconductor chip 4. As shown in FIG. 1, the package portion 6 connected to each other is joined from the back side so as to close one end portion of the waveguide 1 of the metal housing 2. That is, using the heterogeneous device integration technique and the rewiring technique, the multilayer dielectric substrate 9 and the semiconductor chip 4 are integrated with the mold resin 7, and the antenna coupler 5 and the semiconductor chip 4 are connected by the rewiring line 8.

  In this way, the multilayer dielectric substrate 9 having the back short 3 and the semiconductor chip 4 are embedded with the mold resin 7 to fix and integrate these positions, and the rewiring line 8 is formed thereon to form the antenna coupler 5. As shown in FIG. 1, the package portion 6 connecting the semiconductor chip 4 and the semiconductor chip 4 is joined from the back side of the back short 3 so as to close one end portion of the waveguide 1 of the metal housing 2. That is, using the heterogeneous device integration technique and the rewiring technique, the multilayer dielectric substrate 9 and the semiconductor chip 4 are integrated with the mold resin 7, and the antenna coupler 5 and the semiconductor chip 4 are connected by the rewiring line 8.

The package portion 6 in which the back short 3, the antenna coupler 5 and the semiconductor chip 4 are integrated as described above is attached to the metal housing 2 so as to close one end of the waveguide 1 of the metal housing 2. By laminating (bonding), waveguide-line conversion (coaxial conversion) to semiconductor chip mounting are realized.
In the case of the high-frequency module shown in FIGS. 1, 2 (A), and 2 (B), a multilayer dielectric as an antenna coupler 5 is used to transmit a high-frequency signal between the waveguide 1 and the semiconductor chip 4. The surface conductor layer 9B and the redistribution line 8 of the substrate 9 are used, and the length thereof can be shortened. That is, the distance between the antenna coupler 5 (conversion unit) and the semiconductor chip 4 can be shortened, and the transmission line can be shortened. For this reason, it is possible to reduce transmission loss, that is, signal loss (line loss) due to line resistance. Further, although the wavelength becomes shorter as the transmitted signal becomes higher in frequency, even in such a case, the length to the semiconductor chip 4 can be made shorter than ¼ of the wavelength, and the waveform due to signal reflection. Degradation can also be suppressed. For example, even when an ultra-high-frequency high-frequency signal such as a millimeter wave or a terahertz wave is transmitted, waveform deterioration due to signal reflection can be suppressed. For example, the wavelength is about 3 mm for a high-frequency signal of about 100 GHz, and the wavelength is about 1 mm for a high-frequency signal of about 300 GHz. Even in such a case, the length to the semiconductor chip 4 can be made shorter than ¼ of the wavelength, and waveform degradation due to signal reflection can be suppressed. Thereby, it is possible to suppress the deterioration of the high frequency characteristics when transmitting (input / output) a high frequency signal between the waveguide 1 and the semiconductor chip 4. That is, it is possible to suppress the deterioration of the high frequency characteristics in the transmission line extending from the semiconductor chip 4 toward the waveguide 1.

  In addition, a package portion 6 in which the back short 3, the antenna coupler 5, and the semiconductor chip 4 are integrated is manufactured and bonded to the metal housing 2 so as to close one end of the waveguide 1 of the metal housing 2. The mounting accuracy of the antenna coupler 5 with respect to the waveguide 1 and the back short 3 is increased. That is, the distance between the back short 3 and the antenna coupler 5 can be accurately set to a distance of ¼ of the wavelength of the transmitted high-frequency signal depending on the thickness of the multilayer dielectric substrate 9 and the pattern accuracy. Further, since the distance between the back short 3 and the antenna coupler 5 can be set with high accuracy, when the package unit 6 and the metal casing 2 are bonded together, it is only necessary to perform alignment in the horizontal direction with high accuracy. Alignment can be performed. For this reason, the mounting accuracy of the antenna coupler 5 with respect to the waveguide 1 and the back short 3 becomes high. Thereby, it can suppress that a characteristic changes greatly by mounting error, processing variation, etc., and can also improve conversion efficiency of waveguide-line conversion.

  On the other hand, when a microstrip line substrate is used as in the prior art (see, for example, FIGS. 17A and 17B), characteristics (electrical characteristics) depend on processing variations and mounting accuracy of the microstrip line substrate. Will change drastically. For example, when transmitting ultra-high-frequency high-frequency signals such as millimeter waves and terahertz waves, the size of the waveguide and the distance from the microstrip line to the back short are the same as the thickness and width of the microstrip line substrate. It becomes an order. For example, the wavelength is about 3 mm for a high-frequency signal of about 100 GHz and the wavelength is about 1 mm for a high-frequency signal of about 300 GHz, and the thickness and width of the microstrip line substrate are not negligible with respect to the wavelength. For this reason, the characteristics greatly change due to processing variations of the microstrip line substrate. Also, when mounting the microstrip line substrate, consider the distance between the microstrip line and the back short, and the length of the microstrip line substrate protruding into the waveguide, in the vertical and horizontal directions. Therefore, it is difficult to align with high accuracy. For this reason, the characteristics greatly change depending on the mounting accuracy (processing error and mounting error) of the microstrip line substrate.

Further, by pasting the package portion 6 in which the back short 3, the antenna coupler 5 and the semiconductor chip 4 are integrated to the metal casing 2 so as to close one end of the waveguide 1 of the metal casing 2, In order to realize from waveguide-line conversion to semiconductor chip mounting, downsizing and low loss can be realized.
In this embodiment, in addition to the rewiring line 8 (rewiring signal line) for connecting the antenna coupler 5 and the signal input / output terminal 20 of the semiconductor chip 4, FIG. 2A and FIG. As shown, for example, the redistribution ground portion 13 connected to the ground terminal 15 </ b> A connected to the back short 3 or the ground terminal 15 </ b> B of the semiconductor chip 4 via the via 16, A redistribution signal line 14 connected via the via 18 is also formed. Here, the back short 3 is connected to the ground terminal 15 </ b> A via the ground wiring 21. And the metal housing | casing 2 is bonded on the rewiring ground part 13 (refer FIG. 1), and only the upper part of the rewiring signal lines 8 and 14 becomes a clearance gap (gap). In particular, in a region where a high-frequency signal is transmitted between the antenna coupler 5 and the semiconductor chip 4, only a gap above the redistribution line 8 is a gap, and since this gap is small, radio waves (signals) in the waveguide mode. Can be prevented from leaking and propagating.

  On the other hand, when a microstrip line substrate is used as in the prior art (see, for example, FIGS. 17A and 17B), the microstrip line substrate is placed in a space continuous with the waveguide inside the metal housing. Must be implemented. For this reason, since a large gap is formed above the microstrip line substrate, it is difficult to suppress radio waves from leaking and propagating in the waveguide mode. In addition, since the microstrip line substrate has a limit in reducing the thickness in order to ensure its strength, it suppresses radio waves from leaking and propagating through the substrate part below the microstrip line. It is also difficult to do.

  The semiconductor chip 4 is also referred to as a circuit chip, a semiconductor circuit chip, or a semiconductor integrated circuit chip. The antenna coupler 5 is also referred to as a conversion coupler, a current collecting coupler, or a probe. In addition, the back short 3 and the semiconductor chip 4 integrated with the resin 7 are also referred to as an integrated body. Further, a multilayer dielectric substrate 9 provided with a portion of the package portion 6 that faces the end face (termination) of the waveguide 1, that is, a back conductor layer 9 A that functions as the back short 3 and a front conductor layer 9 B that functions as the antenna coupler 5. , Conversion unit, signal conversion unit, waveguide-antenna coupler / redistribution line converter, or probe-coupled converter. The high-frequency module also has a function as a waveguide-antenna coupler / redistribution line converter or a probe-coupled converter. For this reason, it is also called a signal conversion module.

In the above-described embodiment, the back short 3 is the back conductor layer 9A provided on the back surface of the multilayer dielectric substrate 9, and the antenna coupler 5 is provided on the surface opposite to the back surface of the multilayer dielectric substrate 9. The multi-layer dielectric substrate 9 and the semiconductor chip 4 are integrated with the resin 7 as the surface conductor layer 9B. However, the present invention is not limited to this.
For example, as shown in FIGS. 3A and 3B, the back short 3 is a conductor layer 9A provided on the back surface of the multilayer dielectric substrate 9, and the antenna coupler 5 is connected to the redistribution line 8. The multilayer dielectric substrate 9 and the semiconductor chip 4 may be integrated with the resin 7 as a portion 8X extending to a region between the wave tube 1 and the back short 3. This is referred to as a first modification. In this case, the antenna coupler 5 is constituted by a part 8X of the redistribution line 8. That is, a part 8X of the redistribution line 8 functions as the antenna coupler 5.

  For example, as shown in FIGS. 4A and 4B, the back short 3 is a bottom 22A of a bathtub-shaped metal member 22 having a bottom 22A and a frame-like side 22B, and the antenna coupler 5 is used. May be a portion 8X extending to a region between the waveguide 1 and the back short 3 of the redistribution line 8, and the bathtub-shaped metal member 22 and the semiconductor chip 4 may be integrated with the resin 7. The region (inside) defined by the bottom portion 22A and the frame-shaped side portion 22B of the bathtub-shaped metal member 22 may be filled with the dielectric 23. Here, as the dielectric 23, a low dielectric constant dielectric or a low loss dielectric may be used. For example, any one material selected from the group consisting of fluorinated resins represented by benzocyclobutene, liquid crystal polymer, cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene (PTFE) may be used. . This is referred to as a second modification. In this case, the antenna coupler 5 is constituted by a part 8X of the redistribution line 8. That is, a part 8X of the redistribution line 8 functions as the antenna coupler 5. The bathtub-shaped metal member 22 is also referred to as a bathtub-shaped (bathtub-shaped) metal block or a metal bathtub structure. The dielectric 23 is also referred to as a dielectric block. Further, the bathtub-shaped metal member 22 filled with the dielectric 23 is also referred to as a back short block (passive element).

  In the case of these first modification and second modification, the redistribution line 8 is connected to the semiconductor via vias 11 provided in the resin layer 10 formed on the resin 7 as in the case of the above-described embodiment. What is necessary is just to be comprised by the line conductor 12 electrically connected to the chip | tip 4. FIG. In this case, a portion 12 </ b> X that extends to the region between the waveguide 1 and the back short 3 of the line conductor 12 becomes the antenna coupler 5. That is, a part 12X of the line conductor 12 functions as the antenna coupler 5. The redistribution line 8 having such a configuration may be provided by plating using, for example, a semi-additive method, or may be provided by metal paste (for example, copper paste or silver paste) using an inkjet method. However, in consideration of cost and mounting accuracy, it is preferable to provide by plating using a semi-additive method.

  In the above-described embodiment, the first modification, and the second modification, the redistribution line 8 is electrically connected to the semiconductor chip 4 via the via 11 provided in the resin layer 10 formed on the resin 7. Although it is assumed that the line conductor 12 is connected, the present invention is not limited to this. For example, as in the second and third embodiments described later, the redistribution line is a line conductor electrically connected to the semiconductor chip through a via formed in a dielectric film provided on a resin. It is good also as what is comprised by. In a redistribution line having such a configuration, for example, a dielectric film having a conductor layer (for example, a metal layer such as a copper foil) is provided on a resin of an integrated body, and the conductor layer is patterned to form a line conductor. What is necessary is just to provide by forming a via | veer in a body film. For example, after pasting a dielectric film with a metal layer bonded through an adhesive layer on the resin of the integrated body, the metal layer is patterned and vias are formed in the dielectric film to form a redistribution line. It only has to be provided. Either the patterning of the conductor layer or the formation of the via may be performed first.

  Alternatively, the redistribution line may be provided by attaching a dielectric film on which the redistribution line is patterned on the resin of the integrated body. For example, as shown in FIG. 5, a dielectric film 25 having a via 11 and a line conductor 12 connected to the via 11 (including a portion 12X functioning as the antenna coupler 5 in this case) is placed on the resin 7 of the integrated body. By providing, the redistribution line 8 (here, the portion 8X functioning as the antenna coupler 5 is also included) may be provided. For example, a dielectric film 25 in which the line conductor 12 and the via 11 as the redistribution line 8 are patterned on the resin 7 of the integrated body may be bonded with an adhesive 26. In this case, the conductive adhesive 26A is used to bond the via 11 patterned in the dielectric film 25 and its neighboring region, and the low dielectric / low loss adhesive 26B is used to bond the other region. Is preferred. In addition, in FIG. 5, although the structure of the 2nd modification is mentioned as an example, the case of the above-mentioned embodiment and a 1st modification is also the same. However, in consideration of cost and mounting accuracy, it is preferable to provide the redistribution line by a method of patterning the redistribution line after attaching the dielectric film on the resin of the integrated body.

Next, the manufacturing method of the high frequency module concerning this embodiment is demonstrated.
First, the package part 6 having the back short 3, the semiconductor chip 4, and the antenna coupler 5 is manufactured (process for manufacturing the package part).
That is, first, the back short 3 and the semiconductor chip 4 are integrated with the resin 7 [see FIGS. 6A and 6B]. Next, the rewiring line 8 is provided so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected.

Here, when manufacturing the package part 6 provided with the structure of the above-mentioned embodiment, in the process of integrating with the resin 7, it has a back conductor layer 9A that becomes the back short 3 on the back surface, and is on the opposite side of the back surface. The multilayer dielectric substrate 9 having the surface conductor layer 9B to be the antenna coupler 5 on the surface and the semiconductor chip 4 are integrated with the resin 7.
When manufacturing the package unit 6 having the configuration of the first modification described above, the multilayer dielectric substrate 9 and the semiconductor having the conductor layer 9A serving as the back short 3 on the back surface in the step of integrating with the resin 7 In the step of integrating the chip 4 with resin and providing the redistribution line 8, the redistribution line 8 is provided so as to extend to the region above the back short 3 so as to include the portion 8X that becomes the antenna coupler 5.

  Moreover, when manufacturing the package part 6 provided with the structure of the above-mentioned 2nd modification, in the process integrated with the resin 7, it is the bathtub shape which has the bottom part 22A used as the back short 3, and the frame-shaped side part 22B. In the step of integrating the metal member 22 and the semiconductor chip 4 with resin and providing the redistribution line 8, the redistribution line 8 extends to the region above the back short 3 so as to include the portion 8X that becomes the antenna coupler 5. Provided.

  Thus, when manufacturing the package part 6, the process of providing the rewiring line 8, the process of forming the resin layer 10 on the resin 7, the process of forming the via 11 in the resin layer 10, and the resin layer 10 And the step of forming the line conductor 12 in the above. For example, a method using a semi-additive method or an inkjet method is included. The step of providing the redistribution line 8 includes the step of providing a dielectric film having a conductor layer on the resin 7, the step of forming a via in the dielectric film, and patterning the conductor layer to form a line conductor. It is good also as what includes a process. For example, this includes a method of patterning a redistribution line after attaching a dielectric film having a conductor layer on a resin of an integrated body. Note that either the step of forming a via or the step of forming a line conductor may be first. In the step of providing the redistribution line, a dielectric film having vias and line conductors connected to the vias may be provided on the resin. For example, this includes a case where a dielectric film on which a redistribution line is patterned is attached on a resin of an integrated body.

Then, the package portion 6 manufactured as described above is placed in the metal housing 2 having the waveguide 1, the back short 3 is positioned on the extension of the waveguide 1, and the antenna coupler 5 is guided. It is attached so that it is located between the tube 1 and the back short 3.
Hereinafter, a case where the redistribution line 8 is formed by plating using the semi-additive method in the configuration of the above-described second modification will be described as an example with reference to FIGS. 6 and 7.

First, as shown in FIGS. 6A and 6B, the back short 3 and the semiconductor chip 4 are integrated with a resin 7.
In other words, the bathtub-shaped metal member 22 has a bottom portion 22A and a frame-like side portion 22B to be the back short 3, and a region defined by the bottom portion 22A and the frame-like side portion 22B is filled with the dielectric 23. Then, the semiconductor chip 4 is embedded with the mold resin 7 and integrated. Thereby, an integrated body (pseudo wafer) molded with the resin composition is produced.

Next, as shown in FIGS. 7A to 7C, a redistribution line 8 is provided so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected. Here, the redistribution line 8 is provided so as to extend to a region above the back short 3 (the bottom portion 22A of the bathtub-shaped metal member 22) so as to include the portion 8X serving as the antenna coupler 5.
That is, first, as shown in FIG. 7A, a photosensitive resin is applied on the integrated body manufactured as described above to form a photosensitive resin layer 10 and patterned to form a via hole 27. To do.

Next, as shown in FIG. 7B, a seed layer 28 made of, for example, copper or a copper alloy is formed by, for example, sputtering or electroless plating, and the resist 29 is patterned. In order to improve the adhesion between the photosensitive resin layer 10 and the seed layer 28, an adhesion layer made of, for example, Ti, Cr, W, or an alloy thereof may be formed.
Next, as shown in FIG. 7C, by using the seed layer 28, copper is plated by, for example, electroplating to form the via 11 in the via hole 27, and on the photosensitive resin layer 10. A line conductor 12 as the redistribution line 8 (here, the line conductor part 12X as the redistribution line part 8X functioning as the antenna coupler 5 is also included) is formed. In this step, other vias, rewiring ground portions, and rewiring signal lines are also formed. Then, after removing the resist 29 (photoresist), the seed layer 28 remaining under the resist 29 is removed by, for example, wet etching or dry etching.

  In this way, it is constituted by the copper wiring 12 (metal wiring; line conductor) electrically connected to the semiconductor chip 4 through the via 11 provided in the photosensitive resin layer 10 formed on the mold resin 7. A redistribution line 8 is formed. The redistribution line 8 extends to a region above the back short 3 and is formed so as to include a portion 8 </ b> X that becomes the antenna coupler 5.

Therefore, according to the high-frequency module and the method for manufacturing the same according to the present embodiment, there is an advantage that it is possible to suppress deterioration of high-frequency characteristics when a high-frequency signal is transmitted between the waveguide 1 and the semiconductor chip 4. .
[Second Embodiment]
First, the high-frequency module and the manufacturing method thereof according to the second embodiment will be described with reference to FIGS.

  The high-frequency module according to the present embodiment is defined by the bottom portion 22A of the bathtub-shaped metal member 22 and the frame-shaped side portion 22B, as shown in FIG. 8, in contrast to the second modification of the first embodiment described above. The difference is that the region 30 is a space [shaded in FIG. 8]. That is, in the present embodiment, the dielectric 30 is not embedded in the region 30 defined by the bottom portion 22A and the frame-like side portion 22B of the bathtub-shaped metal member 22, and the upper opening is opened. The portion is covered and closed with a dielectric film 31 for forming the redistribution line 8 (including the portion 8X functioning as the antenna coupler 5). Thus, the opening of the bathtub-shaped metal member 22 is covered with the dielectric film 31 to form a hollow structure. That is, the bathtub-shaped metal member 22 has a hollow structure. As described above, the region 30 defined by the bottom portion 22A and the frame-shaped side portion 22B of the bathtub-shaped metal member 22 is used as a space, and air having a low dielectric constant is present, thereby suppressing a reduction in high-frequency gain. Thus, it is possible to reduce the loss. The dielectric film 31 is also referred to as an insulating film, a resin film, or an insulating resin film. In FIG. 8, reference numeral 41 indicates a rewiring ground portion, and reference numeral 42 indicates a rewiring signal line.

For this reason, the redistribution line 8 includes a line conductor 33 (a part functioning as the antenna coupler 5) electrically connected to the semiconductor chip 4 through a via 32 formed in the dielectric film 31 provided on the resin 7. 33X).
Also in this case, as in the case of the second modification of the first embodiment described above, the back short 3 is the bottom 22A of the bathtub-shaped metal member 22 having the bottom 22A and the frame-shaped side 22B. The coupler 5 is a portion 8X extending to a region between the waveguide 1 and the back short 3 of the redistribution line 8, and the bathtub-shaped metal member 22 and the semiconductor chip 4 are integrated with the resin 7. Yes. In this case, the distance between the antenna coupler 5 and the back short circuit 3 depends on the depth of the region 30 defined by the bottom portion 22A of the bathtub-shaped metal member 22 and the frame-shaped side portion 22B and the thickness of the dielectric film 31. Is accurately set to ¼ of the wavelength λ of the high-frequency signal to be transmitted.

  The redistribution line 8 (including the portion 8X functioning as the antenna coupler 5) having the above-described configuration includes, for example, a dielectric film 31 having a conductor layer 33A (for example, a metal layer such as a copper foil) and an integrated resin 7 The conductor layer 33 </ b> A may be provided on the dielectric film 31 by forming the line conductor 33 (including the portion 33 </ b> X functioning as the antenna coupler 5) by patterning the conductor layer 33 </ b> A and forming the via 32 in the dielectric film 31.

  In this embodiment, after the dielectric film 31 (see FIG. 9) to which the metal layer 33A is bonded via the adhesive layer 34 is attached onto the resin 7 of the integrated body, the metal layer 33A is patterned to form a line conductor. 33 (including the portion 33X that functions as the antenna coupler 5) is formed, and the via 32 is formed in the dielectric film 31, thereby providing the redistribution line 8 (including the portion 8X that functions as the antenna coupler 5). . As described above, by using the adhesive layer 34, it is possible to prevent the surface of the dielectric film 31 from being roughened, and thus it is possible to suppress loss in a high frequency band such as a millimeter wave or a terahertz wave. It becomes.

  Here, the dielectric film 31 is preferably made of a low dielectric constant dielectric (low dielectric constant material) or a low loss dielectric (low loss material). For example, any selected from the group consisting of fluorinated resins represented by benzocyclobutene (BCB), liquid crystal polymer, cycloolefin polymer (COP), polyolefin, polyphenylene ether (PPE), polystyrene, and polytetrafluoroethylene (PTFE) It is preferable to be made of one kind of material. The dielectric film 31 made of such a low dielectric constant material is also referred to as a low dielectric material film. Further, assuming that the dielectric film 31 is used in a high frequency band such as a millimeter wave or a terahertz wave, the surface roughness of the dielectric film 31 is preferably about 0.3 microns or less with a 10-point average roughness.

For the metal layer 33A, for example, copper or a copper alloy can be used. The metal layer 33A may be a metal foil. Note that the metal layer 33A may be formed by sputtering, electroless plating, electroplating, or the like.
For the adhesive layer 34, a material such as a compound containing a nitro group, a carboxy group, or a cyano group (for example, nitrobenzoic acid, cyanobenzoic acid, or the like) can be used. Further, a silane coupling agent containing a mercapto group or amino group, a triazine thiol composed of a mercapto group, or the like can also be used.

  As described above, the low dielectric material film 31 to which the metal layer 33A is bonded via the adhesive layer 34 is formed, for example, by forming an adhesive layer on the surface of a metal foil (for example, copper foil) and then a low dielectric constant material (resin ) Can be formed by coating. For example, a low dielectric material film can be formed by laminating a copper foil (for example, 9 μm thick), an adhesive layer, and a film made of a low dielectric constant material (for example, 10 μm thick). For example, after coating a low dielectric constant material on a support film, an adhesive layer is formed, and a metal layer (for example, a copper layer) can be formed by sputtering or electroless plating.

Next, the manufacturing method of the high frequency module concerning this embodiment is demonstrated.
First, the package part 6 having the back short 3, the semiconductor chip 4, and the antenna coupler 5 is manufactured (process for manufacturing the package part).
That is, first, the back short 3 and the semiconductor chip 4 are integrated with the resin 7. Next, the rewiring line 8 is provided so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected.

  Here, when manufacturing the package part 6 provided with the structure of the above-mentioned embodiment, the bathtub-like metal which has the bottom part 22A used as the back short 3 and the frame-shaped side part 22B in the process of integrating with the resin 7 In the step of integrating the member 22 and the semiconductor chip 4 with the resin 7 and providing the redistribution line 8, the redistribution line 8 is extended to a region above the back short 3 so as to include the portion 8X serving as the antenna coupler 5. Provided.

  Thus, when manufacturing the package part 6, the process of providing the rewiring line 8, the process of providing the dielectric film 31 which has the conductor layer 33A on the resin 7, and the via | veer 32 are formed in the dielectric film 31. It includes a step and a step of patterning the conductor layer 33A to form the line conductor 33. For example, this includes a method of patterning the redistribution line 8 after the dielectric film 31 having the conductor layer 33A is attached onto the resin 7 of the integrated body. Note that either the step of forming the via 32 or the step of forming the line conductor 33 may be first.

Then, the package portion 6 manufactured as described above is placed in the metal housing 2 having the waveguide 1, the back short 3 is positioned on the extension of the waveguide 1, and the antenna coupler 5 is guided. It is attached so that it is located between the tube 1 and the back short 3.
Hereinafter, after the dielectric film 31 to which the metal layer 33A is bonded via the adhesive layer 34 is attached to the resin 7 of the integrated body, the metal layer 33A is patterned and the via 32 is formed in the dielectric film 31. Thus, the case where the redistribution line 8 is provided will be described as an example with reference to FIGS.

First, as shown in FIGS. 10A to 10C, the back short 3 and the semiconductor chip 4 are integrated with a resin 7.
That is, first, as shown in FIG. 10 (A), on the adhesive surface of the adhesive film 36 provided on the support 35, there is a bottom 22A that becomes the back short 3 and a frame-like side 22B. The bathtub-shaped metal member 22 in which the region 30 defined by the bottom portion 22A and the frame-shaped side portion 22B is a space, and the semiconductor chip 4 are disposed. In other words, the bathtub-shaped metal member 22 and the semiconductor are placed at desired positions on the adhesive film 36 provided on the support 35 with the opening of the bathtub-shaped metal member 22 and the circuit surface of the semiconductor chip 4 facing down. The chip 4 is temporarily fixed. This is because when the bathtub-shaped metal member 22 and the semiconductor chip 4 are embedded with the mold resin 7, the region 30 (space) defined by the bottom portion 22A and the frame-shaped side portion 22B of the bathtub-shaped metal member 22 is molded resin. This is to prevent embedding at 7.

Here, as the support 35, for example, a metal substrate such as a Si substrate (Si wafer), a glass substrate, an aluminum plate, a stainless steel plate, and a copper plate, a polyimide film, a printed substrate, or the like can be used. The support 35 is also referred to as a support substrate.
Moreover, as the adhesive film 36, the thing provided with the adhesive on the heat resistant base materials, such as a polyimide resin, a silicone resin, and a fluororesin, can be used. In addition, the adhesive film 36 should just be attached to the support body 35, for example, you may make it attach to the support body 35 with the adhesive provided in the back surface side of the base material of the adhesive film 36. FIG. The adhesive film 36 may have a single layer structure or a multilayer structure of two or more layers. Moreover, what provided the adhesive directly to the support body 35 without using the adhesive film 36 can also be used. Moreover, as a material of an adhesive, an epoxy resin, an acrylic resin, a polyimide resin, a silicone resin, a urethane resin etc. can be used, for example.

  In addition, the adhesive film 36 is characterized in that the adhesiveness does not decrease by heating at the time of molding, and after forming a molded body (integrated body; pseudo wafer) by molding, the molding is performed without reducing the adhesiveness. It is required that the body can be easily peeled off. For this reason, in order to prevent peeling of the semiconductor chip 4 and the bathtub-shaped metal member 22 in the horizontal direction and to facilitate peeling in the vertical direction, for example, a cavity such as a crater is opened on the surface. It is preferable that a protruding shape is formed.

Moreover, as a method of arrange | positioning the bathtub-shaped metal member 22 and the semiconductor chip 4 on the adhesive film 36, a flip chip bonder, a mounter, etc. can be used, for example.
Next, as shown in FIG. 10B, the bathtub-shaped metal member 22 and the semiconductor chip 4 are embedded and integrated with a mold resin 7.
Here, as the mold resin 7, an epoxy resin, a cycloolefin resin, an acrylic resin, a polyimide resin, or the like can be used. Further, the mold resin may contain, for example, alumina, silica, aluminum nitride, aluminum hydroxide, or the like as an inorganic filler as required.

Next, as shown in FIG. 10C, the support 35 and the adhesive film 36 are peeled off.
In this way, an integrated body (pseudo wafer) molded with the resin composition is produced.
Here, the integrated body in which the bathtub-shaped metal member 22 and the semiconductor chip 4 are integrated, that is, the shape of the electronic component that has been integrated and reconstructed may be round like a wafer or square. . For example, if it is a round shape like a wafer, it is possible to use a semiconductor manufacturing facility when forming the redistribution line 8, and if it is a square shape, a printed wiring board is used when forming the redistribution line 8. Manufacturing equipment can be used.

Next, as shown in FIGS. 11 and 12, a redistribution line 8 is provided so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected. Here, the redistribution line 8 is provided so as to extend to a region above the back short 3 so as to include a portion 8X that becomes the antenna coupler 5.
That is, first, as shown in FIG. 11A, a dielectric film 31 (for example, a metal film 33A (for example, a copper foil) is bonded to an integrated body manufactured as described above via an adhesive layer 34 is used. Laminate to liquid crystal polymer). That is, the dielectric film 31 to which the metal layer 33A is bonded via the adhesive layer 34 is attached to the integrated body manufactured as described above, for example, while heating and pressing.

Next, as shown in FIG. 11B, patterning is performed using, for example, a dry film resist 37 (or a liquid resist).
For example, a dry film resist 37 made of an acrylic material is formed by lamination, exposed with a contact aligner, g-line or i-line stepper, and developed with, for example, sodium carbonate. Thereby, the antenna coupler part, the wiring part of the semiconductor chip 4, the ground part above the back short 3, etc. are patterned.

  When a liquid resist is used, for example, a photosensitive phenol resin is applied by spin coating so as to have a thickness of 2 μm, for example, and is exposed with a contact aligner, g-line or i-line stepper, for example, hydroxylated. Develop with tetramethylammonium (TMAH). Thereby, the antenna coupler part, the wiring part of the semiconductor chip 4, the ground part above the back short 3, etc. are patterned.

Next, the metal layer 33A is etched. For example, using the resist pattern as a mask, the copper foil 33A bonded to the dielectric film 31 is wet-etched using, for example, a mixed solution of sulfuric acid and hydrogen peroxide or potassium sulfate as an etching solution, so that the bathtub-shaped metal member 22 or semiconductor The copper foil 33A above the terminals of the chip 3 is removed.
Next, as shown in FIG. 11C, via holes 38 are formed in the dielectric film 31 using, for example, a laser. For example, a carbon dioxide laser or a UV-YAG laser can be used to form the via hole 38.

Next, as shown in FIG. 12A, after the dry film resist 37 is peeled off, a seed layer 39 made of, for example, copper or a copper alloy is formed by, for example, sputtering or electroless plating, and the resist 40 is patterned.
Here, when the seed layer 39 is formed by sputtering, for example, a titanium (Ti) layer may be provided as the adhesion layer in order to improve the adhesion with the base. In this case, for example, a Ti layer may be formed to a thickness of about 100 nm by sputtering, and a Cu (copper) layer may be formed to a thickness of about 100 nm on the Ti layer by sputtering.

For example, when a liquid resist is used for the patterning of the resist 40, after applying the resist, the resist 40 is exposed with a contact aligner, g-line or i-line stepper, and developed with an alkaline developer, so that the bathtub-shaped metal member 22 or semiconductor chip is formed. This may be done by removing the resist 40 above the terminal No. 4.
Next, as shown in FIG. 12B, after forming the via 32 in the via hole 38 by plating the copper by, for example, electroplating using the seed layer 39 and stripping the resist 40 (photoresist). For example, the seed layer 39 remaining under the resist 40 is removed by wet etching or dry etching.

  For example, Cu is deposited as a conductive material by electroplating using the seed layer as a power feeding layer, and a via is formed in each opening of the resist pattern. The via plating height is, for example, 10 μm. Each via electrically connects the pattern formed of copper foil to each terminal of the bathtub-shaped metal member 22 and the semiconductor chip 4. The via plating height can be appropriately selected according to the design.

For example, the resist pattern may be removed using a solvent such as acetone when a liquid resist is used. In the case of using a dry film resist, it may be removed using sodium hydroxide or an organic amine aqueous solution.
When the seed layer is a Cu layer, the seed layer may be removed by wet etching using, for example, a mixed solution of sulfuric acid and hydrogen peroxide or potassium sulfate as an etching solution. Further, when a Ti layer is provided as an adhesion layer under the seed layer, for example, wet etching using an ammonium fluoride aqueous solution as an etching solution, or a mixed gas of CF ₄ and O ₂ , for example, is used. It may be removed by dry etching.

  In this way, it is constituted by the copper wiring 33 (metal wiring; line conductor) electrically connected to the semiconductor chip 4 through the via 32 formed in the dielectric film 31 provided on the mold resin 7. A redistribution line 8 is provided. The redistribution line 8 extends to a region above the back short 3 and is formed so as to include a portion 8 </ b> X that becomes the antenna coupler 5.

  Specifically, an adhesive layer mainly composed of a silicone resin having a film thickness of about 50 μm is formed on the SUS carrier as the support 35. In addition, it is preferable that the adhesive layer has a protrusion-like shape having an open cavity such as a crater having a diameter of about 2 μm and a height of about 0.3 μm by a nanoimprint method on the surface thereof. Next, on this adhesive layer, a polyimide film (adhesive film) 36 having a film thickness of about 50 μm having a silicone adhesive as an adhesive on the surface, the silicone adhesive side is the opposite side of the adhesive layer. Arrange as follows. Next, the copper bathtub-like member 22 and the semiconductor chip 4 are placed on the silicone-based adhesive as the adhesive using a flip chip bonder, and the opening of the copper bathtub-like member 22 and the circuit surface of the semiconductor chip 4 are arranged. Arrange it to be on the silicone adhesive side. Then, using a mold, the copper bathtub-like member 22 and the semiconductor chip 4 are embedded with the mold resin 7 and integrated. Thereafter, the adhesive film 36 is peeled off, and the mold resin 7 is completely cured at about 150 ° C. for about 1 hour, for example. In this way, an integrated body (pseudo wafer) in which the copper bathtub-like member 22 and the semiconductor chip 4 are integrated with the mold resin 7 is produced.

  Subsequently, triazine thiol is formed as the adhesive layer 34 on the copper foil 33A having a thickness of about 18 μm, and the dielectric film 31 (resin sheet) with copper foil in which benzocyclobutene is formed as the low dielectric constant material. Laminate is laminated on the benzocyclobutene side. Next, exposure and development are performed using the dry film resist 37 to form a wiring pattern of about 20 μm and a via hole pattern of about 30 μm. Next, the copper foil 33A is etched using a mixed solution of sulfuric acid and hydrogen peroxide. Subsequently, a via hole 38 of about 20 μm is formed using a UV-YAG laser. Next, after the dry film resist 37 is peeled off, a seed layer 39 is formed by sputtering to form titanium and copper with a thickness of 0.1 μm and 0.3 μm, respectively. Thereafter, a photoresist pattern having an opening in the via portion and the wiring portion is formed, and copper is plated by electroplating using the seed layer 39 previously formed. Then, after removing the photoresist 40, the seed layer 39 remaining under the photoresist 40 is removed by wet etching and dry etching. In this way, the redistribution line 8 is formed.

Since other details are the same as those of the first embodiment and the modification described above, description thereof is omitted here.
Therefore, according to the high-frequency module and the manufacturing method thereof according to the present embodiment, when transmitting a high-frequency signal between the waveguide 1 and the semiconductor chip 4 as in the case of the first embodiment and the modification described above. There is an advantage that it is possible to suppress the deterioration of the high frequency characteristics.

  In the above-described embodiment, the dielectric film 31 having the conductor layer 33A (for example, a metal layer such as copper foil) is provided on the resin 7 of the integrated body, and the conductor layer 33A is patterned to form the line conductor 33 (here, the antenna). The redistribution line 8 (including the portion 8X functioning as the antenna coupler 5 here) is provided by forming the via 32 in the dielectric film 31 and forming the via 33 in the dielectric film 31. However, it is not limited to this.

For example, the redistribution line may be provided by providing a dielectric film having vias and line conductors connected to the vias on the resin of the integrated body. For example, this includes a case where a dielectric film in which a line conductor as a redistribution line and a via are patterned is attached on a resin of an integrated body. That is, a dielectric film in which a line conductor as a redistribution line and a via are patterned on a resin of an integrated body is bonded with an adhesive. In this case, it is preferable to use a conductive adhesive to bond the vias patterned in the dielectric film and the vicinity thereof, and use a low dielectric and low loss adhesive to bond the other regions. However, in consideration of cost and mounting accuracy, it is preferable to provide a redistribution line as in the above-described embodiment. In this case, in the step of providing the redistribution line, a dielectric film having a via and a line conductor connected to the via is provided on the resin.
[Third Embodiment]
First, the high-frequency module and the manufacturing method thereof according to the third embodiment will be described with reference to FIGS.

  The high-frequency module according to the present embodiment is different from that of the second embodiment described above, as shown in FIGS. 13A and 13B, the bottom portion 22A of the bathtub-shaped metal member 22 and the frame-shaped side portion. The area 30 defined by 22B is a space, and the area 30 is provided with a dielectric support member 43 that supports the antenna coupler 5. In FIGS. 13A and 13B, reference numeral 41 denotes a rewiring ground portion, and reference numeral 42 denotes a rewiring signal line.

  Thus, by providing the dielectric support member 43 and supporting the antenna coupler 5, the back short 3 which is the bottom 22A of the bathtub-shaped metal member 22, the waveguide 1 of the redistribution line 8, and the back short 3 are provided. It is possible to maintain the distance from the antenna coupler 5 which is the portion 8X extended to the area between the two. In this case, the antenna coupler 5 depends on the depth of the region 30 defined by the bottom 22A and the frame-shaped side 22B of the bathtub-shaped metal member 22, the height of the dielectric support member 43, and the thickness of the dielectric film 31. And the back short 3 is accurately set to ¼ of the wavelength λ of the high-frequency signal to be transmitted and can be maintained. In particular, the vertical position of the tip position of the antenna coupler 5 can be prevented from changing due to gravity. As a result, when the region 30 defined by the bottom portion 22A and the frame-shaped side portion 22B of the bathtub-shaped metal member 22 is made a space, it is possible to suppress deterioration of gain and high-frequency characteristics. .

  In this case, the upper part of the region 30 defined by the bottom part 22A of the bathtub-shaped metal member 22 and the frame-like side part 22B, that is, the upper part of the space is the redistribution line 8 (here, the dielectric film 31). The dielectric film 31 in a portion other than the portion 8X (here, the portion 33X of the line conductor 33) of the antenna coupler 5 constituted by the line conductor 33) may be removed to form an open state. That is, it is constituted by the redistribution line 8 provided on the dielectric film 31 above the region 30 defined by the bottom portion 22A and the frame-like side portion 22B of the bathtub-shaped metal member 22, that is, above the space. Only the antenna coupler 5 may protrude. As described above, by removing the dielectric film 31, it is possible to further suppress the reduction of the high frequency gain and to further reduce the loss. That is, the minimum necessary dielectric is provided in the region 30 defined by the bottom portion 22A and the frame-shaped side portion 22B of the bathtub-shaped metal member 22, that is, the region where the antenna coupler 5 and the back short 3 exist. By making most of the air with a low dielectric constant, it is possible to further suppress the reduction of the high-frequency gain and to further reduce the loss.

  Here, as a material that can be used for the dielectric support member 43, a material having a dielectric loss tangent as small as possible in the high frequency region is preferable from the viewpoint of reducing loss. A preferred dielectric loss tangent (tan δ) value is about 0.002 or less (1 GHz), more preferably about 0.001 or less. Even higher than this can be used as long as the required high frequency characteristics are not affected, but in the high frequency region of about 100 to about 300 GHz, the increase of the dielectric loss tangent is larger than that of about 1 GHz, so this range is preferable.

  In particular, the dielectric support member 43 is preferably made of a low dielectric constant dielectric (low dielectric constant material) or a low loss dielectric (low loss material). For example, from the group consisting of fluororesins represented by benzocyclobutene (BCB), liquid crystal polymer (LCP), cycloolefin polymer (COP), polyolefin, polyphenylene ether (PPE), polystyrene and polytetrafluoroethylene (PTFE) It is preferable that it is made of any one selected material. The dielectric support member 43 made of such a low dielectric constant material is also referred to as a low dielectric material support member.

The shape of the dielectric support member 43 is not particularly limited, but is preferably a plate shape, a frame shape, or a column shape. Specifically, the shape and arrangement as shown in FIGS. 14A to 14L may be adopted. In FIGS. 14A to 14L, the wall in front of the bathtub-shaped metal member 22 is omitted for easy understanding.
The thickness of the dielectric support member 43 is not particularly limited as long as the antenna coupler 5 can be supported. For example, the dielectric support member 43 is inserted into the region 30 serving as the space of the bathtub-shaped metal member 22 by a chip mounter or a chip bonder. In this case, it is preferable to have a thickness that can withstand adsorption by the nozzle. For example, although it depends on the material, it preferably has a thickness of about several tens of μm. If the thickness of the dielectric support member 43 is larger than necessary, the ratio of air in the space (hollow portion) of the bathtub-shaped metal member 33 is decreased, which is not preferable in terms of suppressing a reduction in high-frequency gain. The thickness of the dielectric support member 43 is preferably determined to be a necessary minimum.

Next, the manufacturing method of the high frequency module concerning this embodiment is demonstrated.
First, the package part 6 having the back short 3, the semiconductor chip 4, and the antenna coupler 5 is manufactured (process for manufacturing the package part).
That is, first, the back short 3 and the semiconductor chip 4 are integrated with the resin 7. Next, the rewiring line 8 is provided so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected.

  Here, when manufacturing the package part 6 having the configuration of the above-described embodiment, first, in the region 30 defined by the bottom part 22A and the frame-like side part 22B of the bathtub-shaped metal member 22, that is, in the space. A dielectric support member 43 for supporting the antenna coupler 5 is provided. Thereafter, in the step of integrating with the resin 7, the bathtub-shaped metal member 22 having the bottom portion 22 </ b> A and the frame-shaped side portion 22 </ b> B that become the back short 3 and the semiconductor chip 4 are integrated with the resin 7, and the rewiring line 8 is In the providing step, the redistribution line 8 is provided so as to extend to the region above the back short 3 so as to include the portion 8X that becomes the antenna coupler 5.

  Thus, when manufacturing the package part 6, the process of providing the rewiring line 8, the process of providing the dielectric film 31 which has the conductor layer 33A on the resin 7, and the via | veer 32 are formed in the dielectric film 31. It includes a step and a step of patterning the conductor layer 33A to form the line conductor 33. For example, this includes a method of patterning the redistribution line 8 after the dielectric film 31 having the conductor layer 33A is attached onto the resin 7 of the integrated body. Note that either the step of forming the via 32 or the step of forming the line conductor 33 may be first.

Then, the package portion 6 manufactured as described above is placed in the metal housing 2 having the waveguide 1, the back short 3 is positioned on the extension of the waveguide 1, and the antenna coupler 5 is guided. It is attached so that it is located between the tube 1 and the back short 3.
Hereinafter, after using the plate-shaped dielectric support member 43 to attach the dielectric film 31 to which the metal layer 33A is bonded via the adhesive layer 34 on the resin 7 of the integrated body, the metal layer 33A is patterned. In addition, a case where the redistribution line 8 is provided by forming the via 32 in the dielectric film 31 and the dielectric film 31 around the antenna coupler 5 is removed as an example will be described with reference to FIGS. 15 and 16. To do.

First, as shown in FIGS. 15A to 15C, the back short 3 and the semiconductor chip 4 are integrated with a resin 7.
That is, first, as shown in FIG. 15 (A), the antenna coupler 5 is supported in the region 30 defined by the bottom 22A and the frame-like side 22B of the bathtub-shaped metal member 22, that is, the space. A dielectric support member 43 is provided. For example, in a region 30 defined by the bottom portion 22A and the frame-like side portion 22B of the bathtub-like member 22 made of copper or aluminum, that is, at a position where the tip of the antenna coupler 5 in the space can be supported The low dielectric material support member 43 is disposed.

  Next, on the pressure-sensitive adhesive surface of the pressure-sensitive adhesive film 36 provided on the support 35, the bottom portion 22A and the frame-shaped side portion 22B that become the back short 3 are provided, and the region 30 (space) defined by these is provided. The bathtub-shaped metal member 22 having the dielectric support member 43 provided therein and the semiconductor chip 4 are disposed. That is, the dielectric support member 43 is provided at a desired position on the adhesive film 36 provided on the support 35 with the face-down with the opening of the bathtub-shaped metal member 22 and the circuit surface of the semiconductor chip 4 facing down. The bathtub-shaped metal member 22 and the semiconductor chip 4 are temporarily fixed. The adhesive film 36 is also referred to as a slightly adhesive sheet.

Next, as shown in FIG. 15B, the bathtub-shaped metal member 22 having the dielectric support member 43 provided therein and the semiconductor chip 4 are embedded and integrated with a mold resin 7 (for example, epoxy resin). To do.
Next, as shown in FIG. 15C, the support 35 and the adhesive film 36 are peeled off.
In this way, an integrated body (pseudo wafer) molded with the resin composition is produced.

Next, as shown in FIGS. 15D to 15E and FIGS. 16A to 16C, rewiring is performed so that the antenna coupler 5 and the semiconductor chip 4 are electrically connected. A line 8 is provided. Here, the redistribution line 8 is provided so as to extend to a region above the back short 3 so as to include a portion 8X that becomes the antenna coupler 5.
That is, first, as shown in FIG. 15D, the integrated body manufactured as described above is laminated on the dielectric film 31 to which the metal layer 33A (for example, copper foil) is bonded via the adhesive layer. To do.

Next, as shown in FIG. 15E, patterning is performed using, for example, a dry film resist 37, the metal layer 33A is etched as shown in FIG. 16A, and the dielectric film 31 is formed using a laser. A via hole 38 is formed.
Next, as shown in FIG. 16B, after the dry film resist 37 is peeled off, a seed layer 39 made of, for example, copper or a copper alloy is formed by, for example, sputtering or electroless plating, and the resist 40 is patterned.

Next, as shown in FIG. 16C, the seed layer 39 is used to form the via 32 in the via hole 38 by plating copper, for example, by electroplating, and the resist 40 (photoresist) is peeled off. For example, the seed layer 39 remaining under the resist 40 is removed by wet etching or dry etching.
In this way, it is constituted by the copper wiring 33 (metal wiring; line conductor) electrically connected to the semiconductor chip 4 through the via 32 formed in the dielectric film 31 provided on the mold resin 7. A redistribution line 8 is provided. The redistribution line 8 extends to a region above the back short 3 and is formed so as to include a portion 8 </ b> X that becomes the antenna coupler 5.

Next, as shown in FIGS. 16D to 16F, a portion 8X (here,) of the antenna coupler 5 constituted by the redistribution line 8 (here, the line conductor 33) provided on the dielectric film 31. Then, the dielectric film 31 other than the portion 33X) of the line conductor 33, that is, the dielectric film 31 around the antenna coupler 5 is removed.
That is, first, as shown in FIG. 16 (D), the resist 44 is patterned, and the dielectric film other than the portion 8X of the antenna coupler 5 above the back short 3 which is the bottom 22A of the bathtub-shaped metal member 22 is formed. 31 is selectively exposed.

  For example, a phenol-based photosensitive resin is applied by spin coating so as to have a thickness of, for example, 4 μm, exposed with a contact aligner, and developed with, for example, tetramethylammonium hydroxide (TMAH). As a result, the dielectric film 31 in portions other than the portion 8X of the antenna coupler 5 above the back short 3 that is the bottom portion 22A of the bathtub-shaped metal member 22 is selectively exposed.

Then, as shown in FIGS. 16E and 16F, the selectively exposed dielectric film 31 is removed by dry etching using, for example, a mixed gas of CF ₄ and O _2, and a bathtub is obtained. The upper part of the back short 3 which is the bottom 22A of the metal member 22 is opened. Then, the resist 44 is removed. For example, the resist 44 may be dissolved and removed with a solvent such as acetone.

In this way, the redistribution line 8 (provided on the dielectric film 31) above the region 30 defined by the bottom 22A and the frame-shaped side 22B of the bathtub-shaped metal member 22, that is, above the space. Here, the antenna coupler 5 constituted by the line conductor 33) protrudes and is supported by the dielectric support member 43, and the periphery of the antenna coupler 5 is in an open state.
Other details are the same as those in the second embodiment and the modification described above.

Therefore, according to the high-frequency module and the manufacturing method thereof according to the present embodiment, when transmitting a high-frequency signal between the waveguide 1 and the semiconductor chip 4 as in the case of the second embodiment and the modification described above. There is an advantage that it is possible to suppress the deterioration of the high frequency characteristics.
In the above-described embodiment, the dielectric film 31 having the conductor layer 33A (for example, a metal layer such as copper foil) is provided on the resin 7 of the integrated body, and the conductor layer 33A is patterned to form the line conductor 33 (here, the antenna). The redistribution line 8 (including the portion 8X functioning as the antenna coupler 5 here) is provided by forming the via 32 in the dielectric film 31 and forming the via 33 in the dielectric film 31. However, it is not limited to this.

For example, the redistribution line may be provided by providing a dielectric film having vias and line conductors connected to the vias on the resin of the integrated body. For example, this includes a case where a dielectric film in which a line conductor as a redistribution line and a via are patterned is attached on a resin of an integrated body. That is, a dielectric film in which a line conductor as a redistribution line and a via are patterned on a resin of an integrated body is bonded with an adhesive. In this case, it is preferable to use a conductive adhesive to bond the vias patterned in the dielectric film and the vicinity thereof, and use a low dielectric and low loss adhesive to bond the other regions. However, in consideration of cost and mounting accuracy, it is preferable to provide a redistribution line as in the above-described embodiment. In this case, in the step of providing the redistribution line, a dielectric film having a via and a line conductor connected to the via is provided on the resin.
[Others]
In addition, this invention is not limited to the structure described in each embodiment and each modification mentioned above, A various deformation | transformation is possible in the range which does not deviate from the meaning of this invention.

Hereinafter, additional notes will be disclosed regarding the above-described embodiments and modifications.
(Appendix 1)
A metal housing having a waveguide;
A back short located on the extension of the waveguide; a semiconductor chip; and an antenna coupler located between the waveguide and the back short. The back short and the semiconductor chip are made of resin. A high-frequency module comprising: a package unit integrated with the antenna coupler and the semiconductor chip electrically connected by a redistribution line.

(Appendix 2)
The back short is a back conductor layer provided on the back surface of the multilayer dielectric substrate,
The antenna coupler is a surface conductor layer provided on a surface opposite to the back surface of the multilayer dielectric substrate,
The high frequency module according to appendix 1, wherein the multilayer dielectric substrate and the semiconductor chip are integrated with the resin.

(Appendix 3)
The back short is a conductor layer provided on the back surface of the multilayer dielectric substrate,
The antenna coupler is a portion extending to a region between the waveguide and the back short of the redistribution line,
The high frequency module according to appendix 1, wherein the multilayer dielectric substrate and the semiconductor chip are integrated with the resin.

(Appendix 4)
The back short is the bottom of a bathtub-shaped metal member having a bottom and a frame-shaped side,
The antenna coupler is a portion extending to a region between the waveguide and the back short of the redistribution line,
The high-frequency module according to appendix 1, wherein the bathtub-shaped metal member and the semiconductor chip are integrated with the resin.

(Appendix 5)
The high frequency module according to appendix 4, wherein the bathtub-shaped metal member has a region defined by the bottom portion and the frame-shaped side portion filled with a dielectric.
(Appendix 6)
The redistribution line is configured by a line conductor electrically connected to the semiconductor chip through a via provided in a resin layer formed on the resin. 5. The high frequency module according to any one of 5 above.

(Appendix 7)
The redistribution line is constituted by a line conductor electrically connected to the semiconductor chip through a via formed in a dielectric film provided on the resin. The high frequency module according to any one of 3 and 5.
(Appendix 8)
The bathtub-shaped metal member has a space defined by the bottom portion and the frame-shaped side portion,
Appendix 4 is characterized in that the redistribution line is constituted by a line conductor electrically connected to the semiconductor chip through a via formed in a dielectric film provided on the resin. The high-frequency module described.

(Appendix 9)
The dielectric film is made of any one material selected from the group consisting of fluorinated resins represented by benzocyclobutene, liquid crystal polymer, cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene. The high-frequency module according to appendix 7 or 8, characterized by

(Appendix 10)
The high frequency module according to appendix 8 or 9, further comprising a dielectric support member that supports the antenna coupler in a region defined by the bottom portion and the frame-shaped side portion of the bathtub-shaped metal member.
(Appendix 11)
The dielectric support member is made of any one material selected from the group consisting of fluorinated resins represented by benzocyclobutene, liquid crystal polymer, cycloolefin polymer, polyolefin, polyphenylene ether, polystyrene, and polytetrafluoroethylene. The high-frequency module according to appendix 10, wherein:

(Appendix 12)
12. The high frequency module according to appendix 10 or 11, wherein the dielectric support member has a plate shape, a frame shape, or a column shape.
(Appendix 13)
Manufacturing a package portion having a back short, a semiconductor chip, and an antenna coupler;
The package portion is placed in a metal housing having a waveguide, the back short is located on the extension of the waveguide, and the antenna coupler is located between the waveguide and the back short. And mounting step
The process of manufacturing the package part includes:
Integrating the back short and the semiconductor chip with a resin;
And a step of providing a redistribution line so that the antenna coupler and the semiconductor chip are electrically connected to each other.

(Appendix 14)
In the step of integrating with the resin, a multilayer dielectric substrate having a back surface conductor layer serving as the back short on the back surface and a surface conductor layer serving as the antenna coupler on the surface opposite to the back surface, and the semiconductor chip The method for manufacturing a high-frequency module according to appendix 13, wherein the resin is integrated with the resin.

(Appendix 15)
In the step of integrating with the resin, the multilayer dielectric substrate having the conductor layer that becomes the back short on the back surface and the semiconductor chip are integrated with the resin,
14. The high frequency module according to appendix 13, wherein in the step of providing the redistribution line, the redistribution line is provided so as to extend to a region above the back short so as to include a portion to be the antenna coupler. Manufacturing method.

(Appendix 16)
In the step of integrating with the resin, the bathtub-shaped metal member having the bottom portion and the frame-shaped side portion that become the back short and the semiconductor chip are integrated with the resin,
14. The high frequency module according to appendix 13, wherein in the step of providing the redistribution line, the redistribution line is provided so as to extend to a region above the back short so as to include a portion to be the antenna coupler. Manufacturing method.

(Appendix 17)
The bathtub-shaped metal member has a space defined by the bottom portion and the frame-shaped side portion,
The step of manufacturing the package portion includes a step of providing a dielectric support member that supports the antenna coupler in a region defined by the bottom portion of the bathtub-shaped metal member and the frame-shaped side portion. The manufacturing method of the high frequency module of Additional remark 16.

(Appendix 18)
The step of providing the redistribution line includes
Forming a resin layer on the resin;
Forming a via in the resin layer;
The method for producing a high-frequency module according to any one of appendices 13 to 15, further comprising a step of forming a line conductor on the resin layer.

(Appendix 19)
The step of providing the redistribution line includes
Providing a dielectric film having a conductor layer on the resin;
Forming vias in the dielectric film;
The method for manufacturing a high-frequency module according to any one of appendices 13 to 17, further comprising a step of patterning the conductor layer to form a line conductor.

(Appendix 20)
The high-frequency wave according to any one of appendices 13 to 17, wherein in the step of providing the redistribution line, a dielectric film having a via and a line conductor connected to the via is provided on the resin. Module manufacturing method.

DESCRIPTION OF SYMBOLS 1 Waveguide 2 Metal housing 3 Back short 4 Semiconductor chip 5 Antenna coupler 6 Package part 7 Resin 8 Redistribution line 8X Part of redistribution line 9 Multilayer dielectric substrate 9A Back surface conductor layer (conductor layer)
9B Surface conductor layer 10 Resin layer 11 Via 12 Line conductor 12X Part of line conductor 13 Redistribution ground part 14 Redistribution signal line 15A Ground terminal connected to back short circuit 15B Semiconductor chip ground terminal 16 Via 17 Other semiconductor chip Signal input / output terminals 18 and 19 Via 20 Semiconductor chip signal input / output terminals 21 Ground wiring 22 Bath-shaped metal member 22A Bottom portion 22B Frame-shaped side portion 23 Dielectric 25 Dielectric film 26 Adhesive 26A Conductive adhesive 26B Low Dielectric / low-loss adhesive 27 Via hole 28 Seed layer 29 Resist 30 Region defined by bottom of bathtub-shaped metal member and frame-shaped side 31 Dielectric film 32 Via 33 Line conductor 33X Part of line conductor 33A Conductor layer (Metal layer; copper foil)
34 Adhesive layer 35 Support 36 Adhesive film 37 Dry film resist 38 Via hole 39 Seed layer 40 Resist 41 Rewiring ground part 42 Rewiring signal line 43 Dielectric support member 44 Resist

Claims (10)

A metal housing having a waveguide;
A back short located on the extension of the waveguide; a semiconductor chip; and an antenna coupler located between the waveguide and the back short. The back short and the semiconductor chip are made of resin. A high-frequency module comprising: a package unit integrated with the antenna coupler and the semiconductor chip electrically connected by a redistribution line. The back short is a back conductor layer provided on the back surface of the multilayer dielectric substrate,
The antenna coupler is a surface conductor layer provided on a surface opposite to the back surface of the multilayer dielectric substrate,
The high-frequency module according to claim 1, wherein the multilayer dielectric substrate and the semiconductor chip are integrated with the resin. The back short is a conductor layer provided on the back surface of the multilayer dielectric substrate,
The antenna coupler is a portion extending to a region between the waveguide and the back short of the redistribution line,
The high-frequency module according to claim 1, wherein the multilayer dielectric substrate and the semiconductor chip are integrated with the resin. The back short is the bottom of a bathtub-shaped metal member having a bottom and a frame-shaped side,
The antenna coupler is a portion extending to a region between the waveguide and the back short of the redistribution line,
The high-frequency module according to claim 1, wherein the bathtub-shaped metal member and the semiconductor chip are integrated with the resin.   The high-frequency module according to claim 4, wherein the bathtub-shaped metal member has a region defined by the bottom portion and the frame-shaped side portion filled with a dielectric.   The redistribution line is constituted by a line conductor electrically connected to the semiconductor chip through a via provided in a resin layer formed on the resin. The high frequency module according to any one of 3 and 5.   2. The redistribution line is constituted by a line conductor electrically connected to the semiconductor chip through a via formed in a dielectric film provided on the resin. The high frequency module of any one of -3,5. The bathtub-shaped metal member has a space defined by the bottom portion and the frame-shaped side portion,
5. The redistribution line is constituted by a line conductor electrically connected to the semiconductor chip through a via formed in a dielectric film provided on the resin. The high frequency module described in 1.   The high-frequency module according to claim 8, further comprising a dielectric support member that supports the antenna coupler in a region defined by the bottom portion and the frame-shaped side portion of the bathtub-shaped metal member. Manufacturing a package portion having a back short, a semiconductor chip, and an antenna coupler;
The package portion is placed in a metal housing having a waveguide, the back short is located on the extension of the waveguide, and the antenna coupler is located between the waveguide and the back short. And mounting step
The process of manufacturing the package part includes:
Integrating the back short and the semiconductor chip with a resin;
And a step of providing a redistribution line so that the antenna coupler and the semiconductor chip are electrically connected to each other.