JP2015129705A - semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the operational stability of a semiconductor device having an active matrix substrate and a counter substrate.SOLUTION: The semiconductor device comprises a first substrate 12, a second substrate 32 or a photoelectric conversion substrate 51, a plurality of thin-film transistors 14, a plurality of semiconductor layers 14i, and a plurality of pixel electrodes 16 supported by the first substrate, an electrode layer 34 supported by the second substrate and a photoelectric conversion layer 36 formed on the electrode layer or an electrode layer 54 formed on a surface, opposite the first substrate side, of the photoelectric conversion substrate, and at least one X-ray absorption connection layer 40 provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate. The X-ray absorption connection layer contains an element whose linear attenuation coefficient at 20 keV is 200 cmor more, and has a plurality of X-ray absorption connection areas 40a each of which, when seen from the normal direction of the first substrate, overlaps at least part of one of the plurality of pixel electrodes or the whole of one of the plurality of semiconductor layers.

Description

  The present invention relates to a semiconductor device, and more particularly to a semiconductor device that detects X-rays.

  Flat panel X-ray detectors are widely used in the medical field, for example. In particular, an X-ray detection apparatus using an active matrix substrate uses a thin film transistor (hereinafter, “TFT”) that the active matrix substrate has for each pixel to irradiate a radiation sensitive layer formed on the active matrix substrate. Detect lines. The radiation sensitive layer is, for example, a semiconductor layer, and the semiconductor layer generates a charge (has photoconductivity) according to the amount of X-rays irradiated. For example, amorphous selenium (a-Se) is used as a semiconductor with good photoconductivity.

  An X-ray detection apparatus using an active matrix substrate is desired to further improve sensitivity to X-rays. As semiconductors having high sensitivity to X-rays, cadmium telluride (CdTe) and zinc cadmium telluride (CdZnTe) have attracted attention. Since CdTe and CdZnTe have a larger atomic number than conventionally used a-Se, there is an advantage that they are excellent in X-ray conversion efficiency. However, since a high temperature is required for film formation, there is a problem that it is difficult to form a film directly on the active matrix substrate from the viewpoint of the heat resistant temperature of the TFT.

  Patent document 1 by the present applicant discloses an X-ray detection apparatus using a semiconductor containing CdTe or CdZnTe and a method for manufacturing the same. The X-ray detection apparatus disclosed in Patent Document 1 is manufactured by separately manufacturing an active matrix substrate and a counter substrate including a photoelectric conversion layer that converts X-rays into electric charges, and then bonding the two substrates together. . Both substrates have conductivity, and are bonded to each other using a connecting material containing resin, and necessary electrical connection is formed between the substrates. According to this method, a semiconductor device having excellent sensitivity to X-rays can be manufactured and provided without affecting the TFT.

Japanese Patent No. 4202315

  However, according to the study by the present inventor, in the X-ray detection apparatus described in Patent Document 1, when the X-ray irradiation dose and / or the accumulated dose is high, the X-ray image accurately shows the X-ray dose distribution. It was found that it may not be reflected in Here, the operation stability means that the X-ray detection apparatus can output an X-ray image that accurately reflects the distribution of the X-ray dose without depending on the X-ray irradiation dose and / or the accumulated dose. .

  The present invention has been made to solve the above-described problems, and an object thereof is to improve the operational stability of a semiconductor device using an active matrix substrate.

A semiconductor device according to an embodiment of the present invention includes a first substrate, a second substrate or a photoelectric conversion substrate disposed to face the first substrate, a plurality of thin film transistors supported on the first substrate, A plurality of semiconductor layers included in any of the plurality of thin film transistors, a plurality of pixel electrodes each connected to any of the plurality of thin film transistors, an electrode layer supported by the second substrate, and the electrode layer The photoelectric conversion layer formed on the electrode layer formed on the surface of the photoelectric conversion substrate opposite to the first substrate side, the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate. provided between, and at least one X-ray absorbing connecting layer, wherein we said at least one X-ray absorbing connecting layer, at a linear attenuation coefficient of 20keV is 200 cm ^-1 or more A plurality of each of which overlaps at least a part of any one of the plurality of pixel electrodes and any one of the plurality of semiconductor layers when viewed from the normal direction of the first substrate. X-ray absorption connection region.

  In one embodiment, the at least one X-ray absorption connection layer is a first X-ray absorption connection layer that is electrically conductive and includes a resin, and is formed on the plurality of pixel electrodes. When viewed from the normal direction of the first substrate, the first substrate has a plurality of first X-ray absorption connection regions that overlap at least a part of any one of the plurality of pixel electrodes and all one of the plurality of semiconductor layers. A first X-ray absorption connection layer, and a second X-ray absorption connection layer formed on the photoelectric conversion layer or on the surface of the photoelectric conversion substrate on the first substrate side and having a plurality of second X-ray absorption connection regions, Each of the plurality of second X-ray absorption connection regions is directly bonded to any one of the plurality of first X-ray absorption connection regions.

A semiconductor device according to another embodiment of the present invention includes a first substrate, a second substrate or a photoelectric conversion substrate disposed so as to face the first substrate, and a plurality of thin film transistors supported on the first substrate. A plurality of semiconductor layers each included in any of the plurality of thin film transistors; a plurality of pixel electrodes each connected to any of the plurality of thin film transistors; and a plurality of pixels overlapping each of the plurality of pixel electrodes. At least one connection layer having a connection region, an electrode layer supported by the second substrate and a photoelectric conversion layer formed on the electrode layer, or opposite to the first substrate side of the photoelectric conversion substrate An electrode layer formed on the surface on the side, and an X-ray absorption part provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate, and the X-ray Osamubu contains an element linear attenuation coefficient in the 20keV is 200 cm ^-1 or more, when viewed from the normal direction of the first substrate, overlapping with the plurality of semiconductor layers.

  In one embodiment, the X-ray absorber includes a plurality of counter electrodes provided between the photoelectric conversion layer or the photoelectric conversion substrate and the at least one connection layer, and each of the plurality of counter electrodes is When viewed from the normal direction of the first substrate, it overlaps with any one of the plurality of semiconductor layers.

  In one embodiment, the X-ray absorption part includes a plurality of X-ray absorption resin parts, and each of the plurality of X-ray absorption resin parts is a plurality of the plurality of X-ray absorption resin parts when viewed from the normal direction of the first substrate. Overlaps any one of the semiconductor layers.

  In one embodiment, the at least one connection layer is a first connection layer having conductivity, containing a resin, and formed on the plurality of pixel electrodes, each of which is a method of the first substrate. A first connection layer having a plurality of first connection regions overlapping at least a part of any one of the plurality of pixel electrodes when viewed from a line direction; and the first of the photoelectric conversion layer or the photoelectric conversion substrate. And a second connection layer having a plurality of second connection regions, and each of the plurality of second connection regions is directly bonded to any one of the plurality of first connection regions. Has been.

  According to the embodiment of the present invention, it is possible to improve the operational stability of a semiconductor device including an active matrix substrate and a counter substrate including a photoelectric conversion layer that converts X-rays into electric charges.

It is typical sectional drawing of X-ray detection apparatus 100A1 by embodiment of this invention. It is sectional drawing which showed the detailed structure per pixel of X-ray detection apparatus 100A1. It is a circuit diagram which shows the equivalent circuit per pixel of X-ray detection apparatus 100A1. It is typical sectional drawing of other X-ray detection apparatus 100B1 by embodiment of this invention. (A)-(d) is sectional drawing which shows typically the process of bonding with the active-matrix board | substrate 10 and the opposing board | substrate 30 of X-ray detection apparatus 100B1. (A)-(d) is the 1st X-ray absorption resin layer 67 formed on the active matrix substrate 10 of X-ray detection apparatus 100B1, and the 2nd X-ray absorption resin layer 66 formed on the opposing board | substrate 30. It is a figure which illustrates positional relationship. It is typical sectional drawing of other X-ray detection apparatus 100A2 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 100B2 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 100A3 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 100B3 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 100A4 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 100B4 by embodiment of this invention. It is typical sectional drawing of other X-ray detection apparatus 200A1 by embodiment of this invention.

  First, the reason why the operation stability is low in the X-ray detection apparatus described in Patent Document 1 found by the present inventor will be described.

  As shown in FIG. 1, FIG. 4, FIG. 7, FIG. 8, or FIG. 9 of Patent Document 1, the X-ray detection device described in Patent Document 1 is made of a connecting material applied on an active matrix substrate. The active matrix substrate and the counter substrate are bonded together. X-rays irradiated from the counter substrate side of the X-ray detection device are converted into charges corresponding to the dose of X-rays in a photoelectric conversion layer provided on the counter substrate, and are arranged in a grid pattern on the active matrix substrate. An X-ray image is output by a plurality of pixels. The X-ray image is a two-dimensional image reflecting the distribution of X-ray dose. The X-ray detection apparatus described in Patent Document 1 sometimes has insufficient operational stability. That is, when the X-ray irradiation dose and / or accumulated dose is high, the X-ray dose distribution may not be accurately reflected in the X-ray image. It has been found that such a decrease in operational stability tends to frequently occur particularly in an X-ray detection apparatus having a thin photoelectric conversion layer.

  In general, it is desirable that the photoelectric conversion layer is thin in order to prevent crosstalk between adjacent pixels when detecting X-rays and obtain an X-ray image with high resolution. When the X-ray detection device is irradiated with X-rays, the charge generated in the photoelectric conversion layer moves to the pixel electrode corresponding to the X-ray irradiation position and is detected as an electrical signal. However, when the photoelectric conversion layer is thick, the generated charges may move not only to the pixel electrode corresponding to the irradiation position but also to a pixel electrode adjacent to the pixel electrode (crosstalk occurs). In this case, the output X-ray image may not accurately reflect the irradiation position of the X-ray, and the resolution of the X-ray image may be reduced.

  According to the study of the present inventor, in the X-ray detection device with a thin photoelectric conversion layer, one of the causes that the operation stability tends to be reduced is that a part of the irradiated X-rays passes through the photoelectric conversion layer. It was found that the active layer of the TFT on the active matrix substrate was irradiated. When the active layer (semiconductor layer) of the TFT is irradiated with X-rays, a defect occurs in the semiconductor, resulting in variations in TFT characteristics (for example, a shift in threshold voltage, an increase in off current, etc.).

  According to the study by the present inventor, it has been found that particularly in an X-ray detection apparatus using an oxide semiconductor as a material of an active layer of a TFT, a decrease in operational stability tends to be noticeable. Examples of the oxide semiconductor include an In—Ga—Zn—O-based semiconductor containing indium, gallium, zinc, and oxygen as main components.

  Note that these descriptions are considerations of the inventor and do not limit the present invention.

  Hereinafter, a semiconductor device according to an embodiment of the present invention will be described with reference to the drawings. The semiconductor device of the embodiment is an X-ray detection device having a photoelectric conversion layer that functions as an X-ray conversion layer, and is a two-dimensional X-ray detector (X-ray imaging device).

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view of an X-ray detection apparatus 100A1 according to an embodiment of the present invention.

  The X-ray detection apparatus 100A1 includes a substrate (first substrate) 12, a substrate (second substrate) 32 disposed so as to face the substrate 12, and a plurality of thin film transistors (hereinafter referred to as “TFTs”) supported by the substrate 12. 14), a plurality of semiconductor layers (active layers) 14 i each included in one of the plurality of TFTs 14, a plurality of pixel electrodes 16 each connected to one of the plurality of TFTs 14, and a substrate 32. Electrode layer 34, photoelectric conversion layer 36 formed on electrode layer 34, and X-ray absorption connection layer 40 provided between the plurality of semiconductor layers 14i and photoelectric conversion layer 36. The substrate 12, including the TFT 14, the pixel electrode 16, and other components (not shown) supported by the substrate 12, is referred to as an active matrix substrate 10, and includes a substrate 32 and an electrode layer 34 supported by the substrate 32. The counter substrate 30 includes the photoelectric conversion layer 36.

The active matrix substrate 10 and the counter substrate 30 are bonded by an X-ray absorption connection layer 40. The X-ray absorption connection layer 40 contains an element whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more, and has a plurality of X-ray absorption connection regions 40a. Each X-ray absorption connection region 40 a overlaps at least a part of any one of the plurality of pixel electrodes 16 and all one of the plurality of semiconductor layers 14 i when viewed from the normal direction of the substrate 12. Since the X-ray absorption connection layer 40 contains an element having a high linear attenuation coefficient, the X-rays that have passed through the photoelectric conversion layer 36 among the X-rays irradiated from the counter substrate 30 side of the X-ray detection device 100A1 are attenuated. be able to. Since the X-ray absorption connection layer 40 overlaps with any one of the plurality of semiconductor layers 14i when viewed from the normal direction of the substrate 12, the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced. Can do. In the X-ray detection apparatus 100A1, since the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the X-ray absorption connection layer 40, the characteristic change of the TFT 14 due to X-ray irradiation can be reduced without reducing the resolution. Suppressed and has excellent operational stability.

  The X-ray detection apparatus 100A1 according to the present embodiment includes the counter substrate 30 including the substrate 32, the electrode layer 34, and the photoelectric conversion layer 36. However, the X-ray detection apparatus according to the embodiment of the present invention is not limited thereto. Absent. An X-ray detection apparatus according to an embodiment of the present invention is replaced with a substrate 32, an electrode layer 34, and a photoelectric conversion layer 36 as in an X-ray detection apparatus 200A1 (see FIG. 13) according to Embodiment 3 of the present invention described later. The counter substrate 50 including the photoelectric conversion substrate 51 and the electrode layer 54 formed on the surface of the photoelectric conversion substrate 51 opposite to the active matrix substrate 10 side is provided instead of the counter substrate 30. Also good.

  In the X-ray detection device described in Patent Document 1, each of the connection layers provided in an island shape is provided so as to overlap with the pixel electrode on the active matrix substrate. ) Is not completely covered. Therefore, in the X-ray detection apparatus described in Patent Document 1, X-rays that have passed through the photoelectric conversion layer are irradiated to the active layer of the TFT without being absorbed and / or attenuated by the connection layer.

  Next, the detailed structure of the X-ray detection apparatus according to the embodiment of the present invention and the principle of detecting X-rays will be described with reference to FIGS. The X-ray detection apparatus 100A1 has a plurality of pixels, and includes a TFT 14 supported on the substrate 12 and a pixel electrode 16 connected to the TFT 14 for each pixel. FIG. 2 is a cross-sectional view showing a detailed configuration per pixel of the X-ray detection apparatus 100A1, and FIG. 3 is a circuit diagram showing an equivalent circuit per pixel of the X-ray detection apparatus 100A1.

  As shown in FIG. 2, the TFT 14 includes a gate electrode 14g formed on the substrate 12, a gate insulating film 18 covering the gate electrode 14g and the CS electrode 17, and a semiconductor layer (active) formed on the gate insulating film 18. Layer) 14i, source electrode 14s, drain electrode 14d, and semiconductor layer 14i, contact layer 14n between source electrode 14s and drain electrode 14d. A portion of the semiconductor layer 14 i that becomes a channel region is disposed so as to overlap with the gate electrode 14 g with the gate insulating film 18 interposed therebetween. The CS electrode 17 formed on the substrate 12 is formed of the same film as the gate electrode 14g, for example. The CS electrode 17, the pixel electrode 16, and the gate insulating film 18 between the CS electrode 17 and the pixel electrode 16 form a charge storage capacitor 19. The drain electrode 14d and the pixel electrode 16 are formed from the same film, for example. The contact layer 14n can be omitted.

The substrate 12 is, for example, a glass substrate or a non-alkali glass substrate. The gate electrode 14g is formed using, for example, tantalum (Ta). The source electrode 14s is formed using, for example, Ta or aluminum (Al). The drain electrode 14d and the CS electrode 17 are, for example, a metal electrode and a transparent electrode, respectively. The gate insulating film 18 is formed using, for example, silicon nitride (SiN _x ) or silicon dioxide (SiO ₂ ).

  The TFT 14, the charge storage capacitor 19, and the photoelectric conversion layer 36 are electrically connected as shown in FIG. Each of the TFTs 14 is connected to a corresponding source bus line 14s and a corresponding gate bus line 14g. For simplicity, the source bus line 14s and the gate bus line 14g are denoted by the same reference numerals as the source electrode 14s and the gate electrode 14g, respectively. When the photoelectric conversion layer 36 is irradiated with X-rays, charges (hole-electron pairs) corresponding to the X-ray dose incident on the photoelectric conversion layer 36 are generated. When a voltage is applied between the electrode layer 34 and the CS electrode 17, among the charges generated in the photoelectric conversion layer 36, holes move to the cathode side and electrons move to the anode side. The charge that has moved to the pixel electrode 16 side is stored in the charge storage capacitor 19. The charge stored in the charge storage capacitor 19 is extracted to the outside via the source bus line 14s by turning on the TFT 14 by a signal supplied to the gate bus line 14g for each pixel. In this manner, the amount of X-ray irradiation incident on the photoelectric conversion layer 36 is converted into a current amount for each pixel, and an image (X-ray image) is output.

  The photoelectric conversion layer 36 functioning as an X-ray conversion layer can be formed using, for example, CdTe or CdZnTe. Since CdTe and CdZnTe have a high X-ray absorption coefficient, by forming the photoelectric conversion layer 36 from CdTe or CdZnTe, the X-rays irradiated on the photoelectric conversion layer 36 can be efficiently detected. By forming the photoelectric conversion layer 36 from CdTe or CdZnTe, the X-ray detection efficiency can be increased, and therefore the X-ray irradiation time required for charging the charge storage capacitor 19 can be shortened. Moreover, the voltage applied to the photoelectric converting layer 36 required in order to detect an X-ray can be made low. Such a semiconductor device can be used not only for still image shooting but also for moving image shooting. For example, a moving image having a frame period of 33 ms (frame frequency is 30 Hz) can be taken.

  The photoelectric conversion layer 36 may be formed of a polycrystalline film of CdTe or CdZnTe. The photoelectric conversion layer 36 is formed using, for example, a proximity sublimation method. The method used for forming the photoelectric conversion layer 36 is not limited to the proximity sublimation method. Instead of the proximity sublimation method, the photoelectric conversion layer 36 may be formed by using, for example, a MOCVD (Metal Organic Chemical Vapor Deposition) method, a screen printing / firing method, an electrodeposition method, or a spray method. The thickness of the photoelectric conversion layer 36 is about 0.3 mm, for example. The photoelectric conversion layer 36 may be formed so as to cover almost the entire surface of the electrode layer 34.

  The electrode layer 34 is formed using a metal, for example. The electrode layer 34 is preferably formed using a metal having a high X-ray transmittance, such as Al. The electrode layer 34 may be formed using a transparent conductive material. The electrode layer 34 may be formed so as to cover almost the entire surface of the substrate 32. The substrate 32 is, for example, a glass substrate, a ceramic substrate, or a silicon substrate.

The X-ray absorption connection layer 40 may be in direct contact with the photoelectric conversion layer 36 or may not be in direct contact with the photoelectric conversion layer 36. The counter substrate 30 may further have an electron blocking layer (not shown) between the photoelectric conversion layer 36 and the X-ray absorption connection layer 40. The electron blocking layer is an insulating layer, and can be formed using, for example, aluminum oxide (AlO _x ). The electron blocking layer can reduce dark current when X-rays are not irradiated on the photoelectric conversion layer 36. For example, when a positive voltage is applied to the electrode layer 34, the electron blocking layer can prevent electrons from moving from the X-ray absorption connection layer 40 to the photoelectric conversion layer 36.

  The counter substrate 30 may further include a plurality of counter electrodes (not shown) between the photoelectric conversion layer 36 and the X-ray absorption connection layer 40. When the counter substrate 30 has an electron blocking layer, the counter electrode is provided between the electron blocking layer and the X-ray absorption connection layer 40, for example. Typically, the counter electrode is provided so as to overlap with any one of the X-ray absorption connection regions 40a. Since the counter substrate 30 further includes such a counter electrode, charges generated in the photoelectric conversion layer 36 due to the X-ray irradiation are collected only on the counter electrode corresponding to the irradiated position. The crosstalk with is effectively suppressed. The counter electrode is formed using a metal such as Ta or Al. The counter electrode is formed, for example, by depositing a metal film on the surface of the counter substrate 30 on the photoelectric conversion layer 36 side by sputtering and patterning so that each of the counter electrodes overlaps one of the X-ray absorption connection regions 40a. ,It is formed.

  The active matrix substrate 10 and the counter substrate 30 are connected to each other by an X-ray absorption connection layer 40. The X-ray absorption connection region 40 a overlaps at least a part of any one of the pixel electrodes 16 when viewed from the normal direction of the substrate 12. Thereby, crosstalk between adjacent pixels when detecting X-rays can be suppressed. In order to more effectively suppress crosstalk and obtain a high-resolution image, each X-ray absorption connection region 40a preferably overlaps only one of the plurality of pixel electrodes 16.

  Each X-ray absorption connection region 40a overlaps with any one of the plurality of semiconductor layers 14i when viewed from the normal direction of the substrate 12. Thereby, since the X-rays irradiated to the semiconductor layer 14i of the TFT 14 pass through the X-ray absorption connection region 40a, the dose of X-rays irradiated to the semiconductor layer 14i of the TFT 14 can be reduced. The X-ray absorption connection layer 40 may be in direct contact with the semiconductor layer 14 i of the TFT 14 or may not be in direct contact with the semiconductor layer 14 i of the TFT 14. For example, an organic insulating film (planarization film) may be provided between the semiconductor layer 14 i and the X-ray absorption connection layer 40. The thickness of the organic insulating film (planarizing film) is, for example, about 3 μm. When the X-ray absorption connection layer 40 is not in direct contact with the semiconductor layer 14 i, not only the X-rays incident from the normal direction of the substrate 12 but also the channel region of the semiconductor layer 14 i at an angle inclined from the normal direction of the substrate 12. It is necessary to consider the influence of the X-rays incident on the part. In particular, when the distance in the normal direction of the substrate 12 between the X-ray absorption connection layer 40 and the semiconductor layer 14i is large, a portion that becomes a channel region of the semiconductor layer 14i at an angle inclined from the normal direction of the substrate 12 There is a tendency that the influence of the X-rays incident on the laser beam becomes large. Each X-ray absorption connection region 40a passes through the X-ray absorption connection region 40a so that X-rays incident on the portion that becomes the channel region of the semiconductor layer 14i at an angle inclined by 0 ° to 25 ° from the normal direction of the substrate 12. Is preferably provided.

  The X-ray absorption connection layer 40 has conductivity and contains a resin. The X-ray absorption connection layer 40 is obtained by, for example, dispersing conductive particles in a resin (for example, an epoxy resin, an acrylic resin, or a modified urethane resin). The resin may be, for example, a photosensitive resin or a resin obtained by adding photosensitivity to an organic conductive material. The conductive particles are, for example, carbon particles, metal particles (for example, gold (Au), silver (Ag), nickel (Ni)), resin particles subjected to Ni plating, and transparent conductive particles (for example, ITO).

The X-ray absorption connection layer 40 contains an element whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more. Elements whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more include, for example, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, and Dy. , Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Ac, Th. The X-ray absorption connection layer 40 may contain compounds (for example, oxides) of these elements.

The resin, conductive particles, and other inorganic substances contained in the connection layer or the resin layer may be collectively referred to as a resin material. For example, the X-ray absorption connection layer 40 is formed by collecting the resin, conductive particles, and elements (including compounds thereof) having a linear attenuation coefficient of 20 cm ⁻¹ or more at 20 keV contained in the X-ray absorption connection layer 40. Sometimes called resin material.

Molybdenum (Mo) used as an X-ray source generates a characteristic X-ray MoKα ray at an energy of 17.5 keV and a characteristic X-ray MoKβ ray at an energy of 19.6 keV, respectively. Therefore, for medical diagnosis by X-rays of about 20 keV. Sometimes used. For example, an element having a linear attenuation coefficient of 200 cm ⁻¹ or more at 20 keV is included in the X-ray absorption connection layer 40 at a volume fraction of 50% or more, and the thickness of the X-ray absorption connection layer 40 is 20 μm. The X-rays having an energy of 20 keV incident on the X-ray absorption connection layer 40 are attenuated to 69% or less. For example, an X-ray absorption connection having a thickness of 20 μm formed of acrylic resin (density: 1.2 g / cm ³ ) made of Ni (density: 8.9 g / cm ³ ) having a linear attenuation coefficient of 287 cm ⁻¹ at 20 keV. When the layer 40 contains 50% by volume fraction, the mass fraction of Ni in the X-ray absorption connection layer 40 is 88%, and X-rays having an energy of 20 keV incident on the X-ray absorption connection layer 40 are Attenuates to 60% or less.

In general, elements having a high density tend to have a large linear attenuation coefficient. On the other hand, the energy (wavelength) dependence of the linear attenuation coefficient of each element has a peak structure in the energy (wavelength) at which each element generates characteristic X-rays. It has the tendency of. That is, the linear attenuation coefficient generally decreases with increasing energy (decreasing wavelength) of incident X-rays. Therefore, at 20 keV, an element having a linear attenuation coefficient of 200 cm ⁻¹ or more and a high X-ray attenuation effect generally has an effect of attenuating X-rays with a high linear attenuation coefficient even for X-rays having other energy. There is a high tendency.

An element having a linear attenuation coefficient of 800 cm ⁻¹ or more at 20 keV has a particularly high effect of attenuating X-rays. Elements whose linear attenuation coefficient at 20 keV is 800 cm ⁻¹ or more are, for example, Mo, Hf, Ta, W, Re, Os, Ir, Pt, Au, Ac, and Th. For example, an element having a linear attenuation coefficient of 800 cm ⁻¹ or more at 20 keV at a volume fraction of 50% or more and formed of an acrylic resin (density: 1.2 g / cm ³ ) and having a thickness of 20 μm The line absorption connection layer 40 attenuates X-rays having an energy of 20 keV incident on the X-ray absorption connection layer 40 to 23% or less.

  In the X-ray detection apparatus according to the embodiment of the present invention having the X-ray absorption connection layer 40, the layer connecting the active matrix substrate 10 and the counter substrate 30 contains a substance having a high X-ray attenuation effect. In order to reduce the amount of rays, it is not necessary to add a new layer or film to the X-ray detector. The X-ray detection apparatus according to the embodiment of the present invention can be manufactured without greatly changing the manufacturing process.

  In the X-ray detection apparatus according to the embodiment of the present invention, it is not necessary to increase the manufacturing process of the TFT 14 and / or the active matrix substrate 10 in order to reduce the amount of X-rays irradiated to the TFT 14. The X-ray detection apparatus according to the embodiment of the present invention can use a TFT and / or an active matrix substrate having a TFT manufactured by a conventional manufacturing method. From the above, the X-ray detection apparatus according to the embodiment of the present invention can achieve excellent operational stability without reducing the manufacturing yield.

  The semiconductor layer 14 i and the contact layer 14 n of the TFT 14 include, for example, an In—Ga—Zn—O-based semiconductor (hereinafter abbreviated as “In—Ga—Zn—O-based semiconductor”). Here, the In—Ga—Zn—O-based semiconductor is a ternary oxide of In (indium), Ga (gallium), and Zn (zinc), and the ratio (composition ratio) of In, Ga, and Zn is It is not specifically limited, For example, In: Ga: Zn = 2: 2: 1, In: Ga: Zn = 1: 1: 1, In: Ga: Zn = 1: 1: 2, etc. are included. The semiconductor layer 14i and the contact layer 14n may be In—Ga—Zn—O-based semiconductor layers containing In, Ga, and Zn at a ratio of, for example, In: Ga: Zn = 1: 1: 1.

  A TFT having an In—Ga—Zn—O-based semiconductor layer has high mobility (more than 20 times that of an amorphous silicon (a-Si) TFT) and low leakage current (less than 1/100 that of an a-Si TFT). Since it has, it is used suitably as a drive TFT and a pixel TFT. If a TFT having an In—Ga—Zn—O-based semiconductor layer is used, the power consumption of the X-ray detection device can be significantly reduced.

  The In—Ga—Zn—O-based semiconductor may be amorphous or may include a crystalline part. As the crystalline In—Ga—Zn—O-based semiconductor, a crystalline In—Ga—Zn—O-based semiconductor in which the c-axis is oriented substantially perpendicular to the layer surface is preferable. Such a crystal structure of an In—Ga—Zn—O-based semiconductor is disclosed in, for example, Japanese Patent Application Laid-Open No. 2012-134475. For reference, the entire content disclosed in JP 2012-134475 A is incorporated herein by reference.

The semiconductor layer 14i and the contact layer 14n of the TFT 14 may include other oxide semiconductors instead of the In—Ga—Zn—O-based semiconductor. For example, Zn-O based semiconductor (ZnO), In-Zn-O based semiconductor (IZO (registered trademark)), Zn-Ti-O based semiconductor (ZTO), Cd-Ge-O based semiconductor, Cd-Pb-O based Including semiconductors, CdO (cadmium oxide), Mg—Zn—O based semiconductors, In—Sn—Zn—O based semiconductors (eg, In ₂ O ₃ —SnO ₂ —ZnO), In—Ga—Sn—O based semiconductors, etc. You may go out.

  The semiconductor layer 14i and the contact layer 14n of the TFT 14 may include other semiconductors instead of the oxide semiconductor. For example, amorphous silicon, polycrystalline silicon, or the like may be included.

  Next, the structure of another X-ray detection apparatus 100B1 of this embodiment will be described with reference to FIG. FIG. 4 is a schematic cross-sectional view of the X-ray detection apparatus 100B1.

As shown in FIG. 4, the X-ray detection apparatus 100B1 has two layers, that is, a first X-ray absorption connection layer 42 and a second X-ray absorption connection layer 44 as an X-ray absorption connection layer. And different. The X-ray detection apparatus 100B1 may be the same as the X-ray detection apparatus 100A1 except that it has two X-ray absorption connection layers. In the X-ray detection apparatus 100B1, an X-ray absorption connection layer is provided between the plurality of semiconductor layers 14i and the photoelectric conversion layer 36, and contains an element having a linear attenuation coefficient at 20 keV of 200 cm ⁻¹ or more. When the absorption connection region is viewed from the normal direction of the substrate 12, it overlaps with any one of the plurality of semiconductor layers 14i, so that the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced. Therefore, the X-ray detection apparatus 100B1 is excellent in operational stability because occurrence of defects due to the change in characteristics of the TFT 14 due to X-ray irradiation is suppressed.

  The first X-ray absorption connection layer 42 of the X-ray detection device 100B1 is formed on the plurality of pixel electrodes 16 of the active matrix substrate 10 and has a plurality of first X-ray absorption connection regions 42a. Each first X-ray absorption connection region 42 a overlaps at least a part of any one of the plurality of pixel electrodes 16 and any one of the plurality of semiconductor layers 14 i when viewed from the normal direction of the substrate 12. The second X-ray absorption connection layer 44 included in the X-ray detection device 100B1 is formed on the photoelectric conversion layer 36 of the counter substrate 30 and has a plurality of second X-ray absorption connection regions 44a. Each of the plurality of second X-ray absorption connection regions 44a is directly bonded to any one of the plurality of first X-ray absorption connection regions 42a.

  In the X-ray detection apparatus 100B1, the first X-ray absorption connection layer 42 provided on the active matrix substrate 10 and the second X-ray absorption connection layer 44 provided on the counter substrate 30 are directly bonded to each other. Excellent connection stability.

  Each first X-ray absorption connection region 42a overlaps with any one of the plurality of pixel electrodes 16, and each second X-ray absorption connection region 44a is bonded to any one of the first X-ray absorption connection regions 42a. Thereby, the crosstalk between adjacent pixels at the time of detecting the X-ray irradiated to the photoelectric converting layer 36 can be suppressed. In order to suppress crosstalk more effectively and obtain a high-resolution image, each first X-ray absorption connection region 42a overlaps only one of the plurality of pixel electrodes 16, and each second X-ray absorption connection The region 44a is preferably bonded to only one of the first X-ray absorption connection regions 42a. The first X-ray absorption connection layer 42 and the second X-ray absorption connection layer 44 are made of, for example, the same resin material as the resin material forming the X-ray absorption connection layer 40 of the X-ray detection device 100A1. The resin material forming the first X-ray absorption connection layer 42 and the second X-ray absorption connection layer 44 may be the same resin material or different resin materials.

  Next, a method for manufacturing the X-ray detection apparatus 100B1 will be described with reference to FIGS. 5 (a) to 5 (d) and FIGS. 6 (a) to 6 (d). FIG. 5A to FIG. 5D are cross-sectional views schematically showing a process of bonding the active matrix substrate 10 and the counter substrate 30 of the X-ray detection apparatus 100B1. 6D shows the positional relationship between the first X-ray absorption resin layer 67 formed on the active matrix substrate 10 of the X-ray detection apparatus 100B1 and the second X-ray absorption resin layer 66 formed on the counter substrate 30. It is a figure illustrated.

  FIG. 5A is a diagram showing a process of forming a first X-ray absorbing resin film 69 and a second X-ray absorbing resin film 68 on the surfaces of the active matrix substrate 10 and the counter substrate 30, respectively. In this step, first, the active matrix substrate 10 and the counter substrate 30 are prepared. The active matrix substrate 10 can be manufactured by a known method. The active matrix substrate 10 may be manufactured in the same process as the active matrix substrate used for a liquid crystal display device, for example. The counter substrate 30 is prepared by preparing a substrate 32, forming an electrode layer 34 on the substrate 32, and forming a photoelectric conversion layer 36 on the electrode layer 34.

  Next, as shown in FIG. 5A, a first X-ray absorbing resin film 69 is formed by applying resin to almost the entire surface of the active matrix substrate 10 on the pixel electrode 16 side. A second X-ray absorbing resin film 68 is formed by applying resin to almost the entire surface of the counter substrate 30 on the photoelectric conversion layer 36 side. The first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 may be formed using the same resin material, or may be formed using different resin materials. In the case of a liquid resin, it can be applied to the substrate using, for example, a spin method, a spray method, or a printing method. In the case of a film-like resin, it can be applied to the substrate using, for example, a laminating method. The film-like resin has an advantage that a resin having a uniform thickness can be easily realized. After the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 are formed, the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 may be pre-baked.

  Here, the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 are each formed using a conductive resin dispersed in a photosensitive resin. When a photosensitive resin is used for the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68, the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 are formed by a photolithography process without using a photoresist. Can be formed. By not using a photoresist, the photolithography process can be simplified. The photosensitive resin may be a positive type or a negative type. When the resin of the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 is a resin that does not have photosensitivity, by using a photoresist, the first X-ray absorbing resin layer 67 and the second X The line absorbing resin layer 66 can be formed.

  FIG. 5B is a diagram showing a process of forming the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 on the surfaces of the active matrix substrate 10 and the counter substrate 30, respectively. Here, by using a photolithography process, the first X-ray absorption resin layer 67 and the second X-ray absorption including island-like structures regularly arranged from the first X-ray absorption resin film 69 and the second X-ray absorption resin film 68 are used. Resin layers 66 are respectively formed. The first X-ray absorbing resin layer 67 includes a plurality of first X-ray absorbing resin regions 67a, and the second X-ray absorbing resin layer 66 includes a plurality of second X-ray absorbing resin regions 66a. When the photolithography process is used, the first X-ray absorbing resin region 67a and the second X-ray absorbing resin region 66a can be formed with high accuracy.

In the photolithography process, the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68 are each irradiated with ultraviolet light through a photomask having an opening with a predetermined pattern, and regions corresponding to the opening Only expose. After the exposure, development is performed with an organic alkali solution or the like. Wash with water after developing. The condition for irradiating with ultraviolet rays is, for example, about 10 mW / cm ² × 20 seconds, and the development time is, for example, about 60 seconds. When a positive photosensitive resin is used for the first X-ray absorbing resin film 69 and / or the second X-ray absorbing resin film 68, the resin in the exposed region is removed, and the resin in the region other than the exposed region is removed. The first X-ray absorbing resin layer 67 and / or the second X-ray absorbing resin layer 66 is formed. When a negative photosensitive resin is used for the first X-ray absorbing resin film 69 and / or the second X-ray absorbing resin film 68, the resin in the region other than the exposed region is removed, and the resin in the exposed region is removed. The first X-ray absorbing resin layer 67 and / or the second X-ray absorbing resin layer 66 are formed.

  Here, the shape (pattern) of the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 will be described with reference to FIGS. 6A shows the second X-ray absorbing resin layer 66 formed on the photoelectric conversion layer 36 side of the counter substrate 30, and FIG. 6B shows the pixel electrode 16 side of the active matrix substrate 10. FIG. 6C is a diagram illustrating the formed first X-ray absorption resin layer 67, and FIG. 6C is a diagram illustrating the positional relationship among the first X-ray absorption resin region 67a, the pixel electrode 16, and the TFT 14 for each pixel. FIG. 6D is a diagram illustrating the positional relationship between the first X-ray absorbing resin layer 67, the second X-ray absorbing resin layer 66, and the pixel electrode 16 when the active matrix substrate 10 and the counter substrate 30 are bonded together. is there. As shown in FIG. 6B, the first X-ray absorbing resin layer 67 includes a plurality of first X-ray absorbing resin regions 67a, and each of the first X-ray absorbing resin regions 67a is as shown in FIG. 6C. In addition, it is formed so as to overlap with any one part of the pixel electrode 16 and any one of the semiconductor layers 14 i of the TFT 14. As shown in FIG. 6A, the second X-ray absorbing resin layer 66 includes a plurality of second X-ray absorbing resin regions 66a, and each of the second X-ray absorbing resin regions 66a is as shown in FIG. 6D. In addition, when the active matrix substrate 10 and the counter substrate 30 are bonded together, the active matrix substrate 10 and the counter substrate 30 are formed so as to overlap any one of the first X-ray absorbing resin regions 67a. Each of the first X-ray absorption resin regions 67a may be formed so as to overlap with only one of the pixel electrodes 16, and each of the second X-ray absorption resin regions 66a corresponds to the first X-ray absorption resin region 67a. It may be formed so as to overlap only one of them.

  Here, the positional relationship among the pixel electrode 16, the first X-ray absorption resin region 67a, and the second X-ray absorption resin region 66a will be described. The positional relationship between the pixel electrode 16, the first X-ray absorption resin region 67a, and the second X-ray absorption resin region 66a is as follows: the pixel electrode 16, the first X-ray absorption resin region 67a, and the second X-ray absorption resin region 66a. It depends on the two-dimensional size, pitch, and distance between adjacent points. These are all the lengths when viewed from the normal direction of the substrate.

  Whether or not each first X-ray absorbing resin region 67a overlaps with only one of the pixel electrodes 16 is determined by the two-dimensional size of the first X-ray absorbing resin region 67a compared to the pitch of the pixel electrodes 16. The pitch of the pixel electrodes 16 refers to the length of a straight line connecting the position of a certain pixel electrode and the position of a pixel electrode adjacent thereto. The position of the pixel electrode 16 is a position where the center of gravity of the pixel electrode is present. For example, when the pixel electrode 16 is substantially circular, it is a position where the center of the circle is located, and when the pixel electrode 16 is substantially square, it is a position where diagonal lines intersect. In this case, the two-dimensional size of the first X-ray absorption resin region 67a refers to a length obtained by projecting the first X-ray absorption resin region 67a in a direction corresponding to the pitch of the reference pixel electrode 16. .

  For example, as shown in FIG. 6B, when the pixel electrodes 16 are arranged in a matrix in the row direction and the column direction, the pitch Px in the row direction of the pixel electrodes 16 intersects with a diagonal line of a certain pixel electrode. And the distance between the pixel electrode adjacent to the pixel electrode in the row direction and the point where the diagonal line intersects. A pitch Py in the column direction of the pixel electrode 16 is equal to a distance between a point where a diagonal line of a pixel electrode intersects and a point where a diagonal line of a pixel electrode adjacent to the pixel electrode intersects in the column direction. The pitch Px in the row direction of the pixel electrodes 16 and the pitch Py in the column direction of the pixel electrodes 16 may be the same value or different values. The two-dimensional size of the first X-ray absorbing resin region 67a compared to the pitch Px in the column direction of the pixel electrodes 16 is a length obtained by projecting the first X-ray absorbing resin region 67a in the row direction. The two-dimensional size of the first X-ray absorption resin region 67a compared to the pitch Py in the column direction of the pixel electrodes 16 is a length obtained by projecting the first X-ray absorption resin region 67a in the column direction. For example, when the shape of the first X-ray absorbing resin region 67a is a circle, the length of the first X-ray absorbing resin region 67a projected in the row direction and the length of the first X-ray absorbing resin region 67a projected in the column direction are: Both are the length of the circle diameter. Two-dimensional size of the first X-ray absorbing resin region 67a compared with the pitch Px in the row direction of the pixel electrode 16 and 2 of the first X-ray absorbing resin region 67a compared with the pitch Py in the column direction of the pixel electrode 16. The dimensional magnitudes may be the same value or different values.

  In order for each first X-ray absorbing resin region 67a to overlap with only one of the pixel electrodes 16, at least the two-dimensional size of the first X-ray absorbing resin region 67a needs to be smaller than the pitch of the pixel electrodes 16. There is. When the two-dimensional size of the first X-ray absorbing resin region 67a is larger than or equal to the pitch of the pixel electrodes 16, no matter how the first X-ray absorbing resin region 67a is arranged on the pixel electrode 16, the first X This is because the linear absorption resin region 67a overlaps with two or more pixel electrodes 16. In order for each first X-ray absorbing resin region 67a to overlap only one of the pixel electrodes 16, an error in forming the first X-ray absorbing resin region 67a on the pixel electrode 16 is, for example, the first X-ray absorbing resin region 67a. It may be smaller than the difference between the two-dimensional size of the absorbent resin region 67a and the pitch of the pixel electrodes 16. The error in forming the first X-ray absorbing resin region 67a on the pixel electrode 16 is, for example, the photomask used when forming the first X-ray absorbing resin region 67a described with reference to FIG. Misalignment.

  Whether each of the second X-ray absorbing resin regions 66a overlaps only one of the first X-ray absorbing resin regions 67a is determined by comparing the pitch of the first X-ray absorbing resin region 67a with that of the second X-ray absorbing resin region 67a. Determined by two-dimensional size. The pitch of the first X-ray absorbing resin region 67a refers to the length of a straight line connecting the position of a certain first resin region and the position of the first resin region adjacent thereto. The position of the first X-ray absorbing resin region 67a is a position where the center of gravity of the first resin region is present. For example, when the first X-ray absorption resin region 67a is substantially circular, the center of the circle is located, and when the first X-ray absorption resin region 67a is substantially square, the diagonal line intersects. The two-dimensional size of the second X-ray absorbing resin region 66a in this case is the length of the second X-ray absorbing resin region 66a projected in the direction corresponding to the pitch of the first X-ray absorbing resin region 67a as a reference. I will say.

  In order for each of the second X-ray absorption resin regions 66a to overlap only one of the first X-ray absorption resin regions 67a, at least the two-dimensional size of the second X-ray absorption resin region 66a is the first X-ray absorption region 66a. The pitch needs to be smaller than the pitch of the absorbent resin region 67a. If the two-dimensional size of the second X-ray absorbing resin region 66a is greater than or equal to the pitch of the first X-ray absorbing resin region 67a, how is the second X-ray absorbing resin region 66a placed on the first X-ray absorbing resin region 67a? This is because the second X-ray absorbing resin region 66a overlaps with the two or more first X-ray absorbing resin regions 67a even if they are disposed in the same position. In order for each second X-ray absorption resin region 66a to overlap with only one of the first X-ray absorption resin regions 67a, the first X-ray absorption resin region 67a and the second X-ray absorption resin region 66a are bonded together. For example, the error may be smaller than the difference between the two-dimensional size of the second X-ray absorption resin region 66a and the pitch of the first X-ray absorption resin region 67a. The error in bonding the first X-ray absorbing resin region 67a and the second X-ray absorbing resin region 66a is, for example, the position between the active matrix substrate 10 and the counter substrate 30 described later with reference to FIG. This is a shift in the alignment process.

  The size, shape, inter-adjacent distance, and pitch of the pixel electrode 16, the first X-ray absorption resin region 67a, and the second X-ray absorption resin region 66a are, for example, substantially square with the pixel electrode 16 having a side of about 70 μm. When the distance between adjacent pixel electrodes 16 is about 10 μm and the pitch of the pixel electrodes 16 is about 80 μm, the first X-ray absorption resin region 67a and the second X-ray absorption resin region 66a are substantially circular with a diameter of about 60 μm. The adjacent distance between the first X-ray absorbing resin regions 67a and the adjacent distance between the second X-ray absorbing resin regions 66a is about 20 μm, and the pitch of the first X-ray absorbing resin region 67a and the pitch of the second X-ray absorbing resin region 66a are About 80 μm. Assuming that the two-dimensional size of the pixel electrode 16 (typically, the length of one side when the shape is approximately square and the length of the diameter when the shape is approximately circular) is 1, the pixel electrode 16 The distance between adjacent pixels is 0.04 to 0.2, the pitch of the pixel electrodes 16 is 1.04 to 1.2, the two-dimensional size of the first X-ray absorbing resin region 67a and the second X-ray absorption. The two-dimensional size of the resin region 66a is 0.5 to 1, and the adjacent distance of the first X-ray absorbing resin region 67a and the adjacent distance of the second X-ray absorbing resin region 66a are 0.04 to 0.7. The pitch of the first X-ray absorbing resin region 67a and the pitch of the second X-ray absorbing resin region 66a are preferably 1.04 to 1.2. The thickness of the first X-ray absorption resin region 67a and the second X-ray absorption resin region 66a is, for example, about 10 μm.

  Here, the inter-adjacent distance of the pixel electrode 16 refers to the length of the shortest of the straight lines connecting the end of a certain pixel electrode and the end of the pixel electrode adjacent to the pixel electrode. When the direction for realizing the distance between adjacent pixel electrodes 16 and the direction corresponding to the pitch of the pixel electrodes 16 are parallel, the pitch of the pixel electrodes 16 is determined by the two-dimensional size of the pixel electrodes 16 and the pixel electrodes 16. It can be the sum of the distances between adjacent points. The inter-adjacent distance of the first X-ray absorbing resin region 67a is the length of the shortest of the straight lines connecting the end of a certain first resin region and the end of the first resin region adjacent to the first resin region. I will say. When the direction that realizes the distance between adjacent first X-ray absorption resin regions 67a and the direction corresponding to the pitch of the first X-ray absorption resin regions 67a are parallel, the pitch of the first X-ray absorption resin regions 67a is 1X This may be the sum of the two-dimensional size of the linear absorption resin region 67a and the distance between adjacent first X-ray absorption resin regions 67a. The adjacent distance of the second X-ray absorbing resin region 66a is defined similarly to the adjacent distance of the first X-ray absorbing resin region 67a. The pitch of the second X-ray absorbing resin region 66a is defined similarly to the pitch of the first X-ray absorbing resin region 67a.

  FIG. 5C is a diagram illustrating a process of aligning the active matrix substrate 10 and the counter substrate 30. As shown in FIG. 5C, the active matrix substrate 10 and the counter substrate 30 are arranged to face each other with a slight gap therebetween, and each of the second X-ray absorption resin regions 66a includes the first X-ray absorption resin. The alignment is performed so as to overlap with any one of the regions 67a.

  FIG. 5D is a diagram illustrating a process of bonding the active matrix substrate 10 and the counter substrate 30 together with a heat press. As shown in FIG. 5D, the active matrix substrate 10 and the counter substrate 30 are bonded together by performing a heat press process. By this step, the first X-ray absorption resin layer 67 having the plurality of first X-ray absorption resin regions 67a becomes the first X-ray absorption connection layer 42 having the plurality of first X-ray absorption connection regions 42a, and a plurality of second X-ray absorption layers are obtained. The second X-ray absorption resin layer 66 having the resin region 66a becomes the second X-ray absorption connection layer 44 having a plurality of second X-ray absorption connection regions 44a, whereby the X-ray detection device 100B1 is obtained.

  According to the method of manufacturing the X-ray detection apparatus according to the embodiment of the present invention, the first X-ray absorption resin layer 67 or the second X-ray absorption resin layer 66 is formed on the active matrix substrate 10 and the counter substrate 30 respectively. Both substrates can obtain excellent adhesiveness between the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66, respectively. Therefore, an X-ray detection apparatus having excellent connection stability between the active matrix substrate 10 and the counter substrate 30 can be obtained.

  According to the manufacturing method of the X-ray detection apparatus according to the embodiment of the present invention, the difference in the adhesion area in the conventional method can also be suppressed. That is, when the resin is applied only to one substrate, the bonding area between the other substrate and the resin is smaller than the bonding area between the one substrate to which the resin is applied and the resin. Although it is considered that the adhesive force with the resin is inferior, according to the method of manufacturing the X-ray detection apparatus according to the embodiment of the present invention, the first X-ray absorption resin layer 67 or the second X-ray absorption resin layer 66 is provided on both substrates By forming, not only the adhesion area between one substrate and the resin but also the adhesion area between the other substrate and the resin does not become small, so the difference in adhesion area is small. Furthermore, the adhesiveness between the resins (the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66) is higher than the adhesiveness between the other substrate to which the resin is not applied and the resin. From these things, the X-ray detection apparatus excellent in the connection stability between both board | substrates can be obtained.

  According to the manufacturing method of the X-ray detection apparatus according to the embodiment of the present invention, the first X-ray absorption resin layer 67 or the second X-ray absorption resin layer 66 is formed on both substrates, respectively. As compared with the case where the resin is applied only to one of the substrates, the amount of the resin applied to each substrate can be reduced. Therefore, the bottom area of the connecting material can be reduced (the ratio of the thickness to the bottom area of the connecting material can be increased) compared to the case where the resin is applied only to one of the substrates. Thereby, it can suppress that a connection material spreads in the plane direction parallel to both board | substrates by press. In addition, since the press pressure can be increased while maintaining a state where crosstalk can be suppressed, the connection stability between the two substrates can be improved. From the above, according to the method of manufacturing the X-ray detection apparatus according to the embodiment of the present invention, the adhesion yield in the manufacturing process of the X-ray detection apparatus is improved.

The apparatus used for the heat press process at the time of bonding shown in FIG.5 (d) is a pressure reduction (vacuum) press apparatus, for example. In the reduced pressure (vacuum) press, the gap between the active matrix substrate 10 to be pressed and the counter substrate 30 is reduced to perform the press using the atmospheric pressure from the outside. According to the reduced pressure (vacuum) press, it is possible to press uniformly even when substrates having large areas are bonded to each other. Since the reduced pressure (vacuum) press is a press method using atmospheric pressure, the press pressure is not more than atmospheric pressure (1 kgf / cm ² ).

The apparatus used for the heat press process is not limited to a reduced pressure (vacuum) press apparatus. For example, by using a pressurizing press device, an autoclave device, and a heating roller, pressing can be performed with a press pressure of more than 1 kgf / cm ² and bonding can be performed. For example, the heating press may be performed at a pressure of 40 kgf / cm ² or more and a temperature of about 25 ° C., and then heated in an oven at about 220 ° C. for about 1 hour.

In particular, when the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 are formed by a photolithography process, after the exposure and development, the active matrix substrate 10 and the counter substrate 30 are hot-pressed and pasted. Therefore, when heat-pressing, the fluidity of the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 is low, so the adhesiveness may be low. Therefore, by using a press pressure exceeding 1 kgf / cm ^{2 for} the heating press, the adhesion between the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 can be improved even when a photolithography process is used. It is possible to obtain an X-ray detection device that is high and has excellent connection stability between both substrates.

  In the manufacturing method of the X-ray detection apparatus 100B1 described with reference to FIGS. 5A to 5D and FIGS. 6A to 6D, a first resin formed using photosensitive resin is used. A first X-ray absorption resin layer 67 and a second X-ray absorption resin layer 66 were formed from the 1X-ray absorption resin film 69 and the second X-ray absorption resin film 68 using a photolithography process, respectively. When the photolithography process is used, the shapes (patterns) of the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 can be formed with high accuracy.

  The formation method of the 1st X-ray absorption resin layer 67 and the 2nd X-ray absorption resin layer 66 is not restricted to this. For example, when a screen printing method or an ink jet method is used, the above-described shapes (patterns) are formed on the active matrix substrate 10 and the counter substrate 30 without forming the first X-ray absorbing resin film 69 and the second X-ray absorbing resin film 68, respectively. ) Having the first X-ray absorption resin layer 67 and the second X-ray absorption resin layer 66. In this case, the first X-ray absorbing resin layer 67 and the second X-ray absorbing resin layer 66 may be formed using a photosensitive resin, or may be formed using a non-photosensitive resin.

  As is well known, the method for manufacturing the X-ray detection apparatus 100A1 according to the embodiment of the present invention is, for example, the above-described X-ray detection apparatus 100B1 except that the X-ray absorption connection layer is one layer. The manufacturing method may be the same.

(Embodiment 2)
Next, the structure of the X-ray detection apparatus 100A2 according to Embodiment 2 of the present invention will be described with reference to FIG. FIG. 7 is a schematic cross-sectional view of the X-ray detection apparatus 100A2.

  The X-ray detection apparatus 100A2 is different from the X-ray detection apparatus 100A1 in that the connection layer 20 is provided instead of the X-ray absorption connection layer 40 and the X-ray absorption resin portion 46 that overlaps the semiconductor layer 14i is further included. The X-ray detection apparatus 100A2 may be the same as the X-ray detection apparatus 100A1 except for the two points described above.

  The connection layer 20 has a plurality of connection regions 20 a, and each connection region 20 a overlaps one of the plurality of pixel electrodes 16. The active matrix substrate 10 and the counter substrate 30 are bonded by the connection layer 20.

The plurality of X-ray absorbing resin portions 46 contains an element having a linear attenuation coefficient of 200 cm ⁻¹ or more at 20 keV, and each of the plurality of X-ray absorbing resin portions 46 is viewed from the normal direction of the substrate 12. It overlaps with any one of the plurality of semiconductor layers 14i. Since the plurality of X-ray absorption resin portions 46 contain an element having a high linear attenuation coefficient, X-rays that have passed through the photoelectric conversion layer 36 among X-rays irradiated from the counter substrate 30 side of the X-ray detection device 100A2 are used. Can be attenuated. Since the plurality of X-ray absorbing resin portions 46 overlap with any one of the plurality of semiconductor layers 14i when viewed from the normal direction of the substrate 12, the amount of X-rays applied to the semiconductor layer 14i of the TFT 14 is reduced. Can be reduced. In the X-ray detection apparatus 100A2, since the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of X-ray absorption resin portions 46, the characteristics of the TFT 14 by X-ray irradiation without reducing the resolution. Change is suppressed and has excellent operational stability.

The plurality of X-ray absorbing resin portions 46 may be referred to as X-ray absorbing portions. The X-ray absorption part is provided between the plurality of semiconductor layers 14 i and the photoelectric conversion layer 36, contains an element having a linear attenuation coefficient of 20 cm ⁻¹ or more at 20 keV, and viewed from the normal direction of the substrate 12 As long as the condition of overlapping with the plurality of semiconductor layers 14 i is satisfied, the present invention is not limited to the plurality of X-ray absorbing resin portions 46. In the X-ray detection device having the X-ray absorption part, the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced, so that the change in characteristics of the TFT 14 due to X-ray irradiation is suppressed without reducing the resolution. Excellent operational stability.

  Note that the X-ray detection apparatus 100A2 according to the present embodiment includes the counter substrate 30 including the substrate 32, the electrode layer 34, and the photoelectric conversion layer 36, but the X-ray detection apparatus according to the embodiment of the present invention includes the counter substrate 30. Not limited. An X-ray detection apparatus according to an embodiment of the present invention is replaced with a substrate 32, an electrode layer 34, and a photoelectric conversion layer 36 as in an X-ray detection apparatus 200A1 (see FIG. 13) according to Embodiment 3 of the present invention described later. The counter substrate 50 including the photoelectric conversion substrate 51 and the electrode layer 54 formed on the surface of the photoelectric conversion substrate 51 opposite to the active matrix substrate 10 side is provided instead of the counter substrate 30. Also good.

The connection layer 20 included in the X-ray detection device 100A2 does not need to contain an element having a linear attenuation coefficient of 20 cm ⁻¹ or more at 20 keV, for example, and the X-ray detection device according to Embodiment 1 of the present invention. It may be the same as the X-ray absorption connection layer 40 in 100A1.

The X-ray absorption resin portion 46 included in the X-ray detection apparatus 100A2 is formed of, for example, the same resin material as the resin material forming the X-ray absorption connection layer 40 included in the X-ray detection apparatus 100A1 according to Embodiment 1 of the present invention. The The plurality of X-ray absorbing resin portions 46 may be formed of a resin material different from the resin material forming the connection layer 20. When the connection layer 20 contains an element whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more, the plurality of X-ray absorbing resin portions 46 are formed of the same resin material as the resin material forming the connection layer 20. May be.

  The plurality of X-ray absorbing resin portions 46 are formed on the active matrix substrate 10 by, for example, a photolithography process. The plurality of X-ray absorbing resin portions 46 may be formed using a method other than the photolithography process. The plurality of X-ray absorbing resin portions 46 can be formed using, for example, a screen printing method, an ink jet method, or a dispenser method. A plurality of X-ray absorbing resin portions 46 may be formed before the connection layer 20 is formed on the active matrix substrate 10, and a plurality of X-rays are formed after the connection layer 20 is formed on the active matrix substrate 10. The absorbent resin portion 46 may be formed. The X-ray absorbing resin portion 46 is, for example, a substantially circular shape having a diameter of about 20 μm. The thickness of the X-ray absorbing resin portion 46 is about 10 μm, for example.

  The X-ray absorbing resin portion 46 may be in direct contact with the semiconductor layer 14 i of the TFT 14 or may not be in direct contact with the semiconductor layer 14 i of the TFT 14. For example, an organic insulating film (flattening film) may be provided between the semiconductor layer 14 i and the X-ray absorbing resin portion 46. The thickness of the organic insulating film (planarizing film) is, for example, about 3 μm. When the X-ray absorbing resin portion 46 is not in direct contact with the semiconductor layer 14 i, not only the X-rays incident from the normal direction of the substrate 12, but also the channel region of the semiconductor layer 14 i at an angle inclined from the normal direction of the substrate 12. It is necessary to consider the influence of the X-rays incident on the part. In particular, when the distance in the normal direction of the substrate 12 between the X-ray absorbing resin portion 46 and the semiconductor layer 14i is large, a portion that becomes a channel region of the semiconductor layer 14i at an angle inclined from the normal direction of the substrate 12 There is a tendency that the influence of the X-rays incident on the laser beam becomes large. The X-ray absorbing resin portion 46 is configured such that X-rays incident on the portion that becomes the channel region of the semiconductor layer 14 i pass through the X-ray absorbing resin portion 46 at an angle inclined by 0 ° to 25 ° from the normal direction of the substrate 12. Are preferably provided.

  The X-ray detection apparatus according to the embodiment of the present invention having a plurality of X-ray absorbing resin portions 46 attenuates X-rays by providing a resin portion containing a substance having a high effect of attenuating X-rays separately from the connection layer. The amount of the resin material containing a substance having a high effect can be reduced. Therefore, the X-ray detection apparatus according to the embodiment of the present invention can reduce the cost for a substance having a high effect of attenuating X-rays, and can be manufactured at a low cost.

  Next, the structure of another X-ray detection apparatus 100B2 of this embodiment will be described with reference to FIG. FIG. 8 is a schematic cross-sectional view of the X-ray detection apparatus 100B2.

  As shown in FIG. 8, the X-ray detection apparatus 100B2 is different from the X-ray detection apparatus 100A2 in that it has two layers of a first connection layer 22 and a second connection layer 24 as connection layers. X-ray detection apparatus 100B2 may be the same as X-ray detection apparatus 100A2 except that it has two connection layers. In the X-ray detection apparatus 100B2, since the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of X-ray absorption resin portions 46, occurrence of defects due to changes in characteristics of the TFT 14 due to X-ray irradiation Is suppressed, and the operation stability is excellent.

  The first connection layer 22 included in the X-ray detection apparatus 100B2 is formed on the plurality of pixel electrodes 16 of the active matrix substrate 10 and includes a plurality of first connection regions 22a. Each first connection region 22 a overlaps at least a part of any one of the plurality of pixel electrodes 16 when viewed from the normal direction of the substrate 12. The second connection layer 24 included in the X-ray detection apparatus 100B2 is formed on the photoelectric conversion layer 36 of the counter substrate 30 and includes a plurality of second connection regions 24a. Each of the plurality of second connection regions 24a is directly bonded to any one of the plurality of first connection regions 22a. In the X-ray detection apparatus 100B2, the first connection layer 22 provided on the active matrix substrate 10 and the second connection layer 24 provided on the counter substrate 30 are directly bonded, so that the connection stability between the two substrates is stable. Is excellent.

The first connection layer 22 and the second connection layer 24 included in the X-ray detection apparatus 100B2 do not need to contain an element whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more, for example. It may be the same as the first X-ray absorption connection layer 42 and the second X-ray absorption connection layer 44 in the X-ray detection device 100B1 according to the first embodiment.

  Next, the structure of still another X-ray detection apparatus 100A3 of this embodiment will be described with reference to FIG. FIG. 9 is a schematic cross-sectional view of the X-ray detection apparatus 100A3.

  As shown in FIG. 9, the X-ray detection apparatus 100A3 is different from the X-ray detection apparatus 100A2 in that it has a plurality of counter electrodes 48 as an X-ray absorption unit. The X-ray detection apparatus 100A3 may be the same as the X-ray detection apparatus 100A2 except that the X-ray detection apparatus 100A3 includes a plurality of counter electrodes 48 as an X-ray absorption unit.

The plurality of counter electrodes 48 are provided between the photoelectric conversion layer 36 and the connection layer 20, and contain an element having a linear attenuation coefficient of 20 cm ⁻¹ or more at 20 keV. When viewed from the normal direction, the layer overlaps any one of the plurality of semiconductor layers 14i. In the X-ray detection apparatus 100A3, the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of counter electrodes 48, so that the change in characteristics of the TFT 14 due to X-ray irradiation is suppressed without reducing the resolution. And has excellent operational stability.

The counter electrode 48 is formed using, for example, an alloy containing an element whose linear attenuation coefficient at 20 keV is 200 cm ⁻¹ or more in a metal such as Ta or Al. The counter electrode 48 may include a compound (for example, an oxide) of an element having a linear attenuation coefficient at 20 keV of 200 cm ⁻¹ or more. For example, when the counter electrode 48 is formed by sputtering deposition of a metal film on the surface of the counter substrate 30 on the photoelectric conversion layer 36 side and viewed from the normal direction of the substrate 12, any one of the plurality of semiconductor layers 14i. It is formed by patterning so as to overlap all of one.

  Each of the counter electrodes 48 may be formed so as to overlap with any one of the connection regions 20a. In this case, since the charges generated in the photoelectric conversion layer 36 by the X-ray irradiation are collected only by the counter electrode 48 corresponding to the irradiated position, crosstalk with surrounding pixels is effectively suppressed. . In order to suppress crosstalk more effectively and obtain an image with high resolution, it is preferable that each of the counter electrodes 48 overlaps only one of the connection regions 20a. On the other hand, the area of the counter electrode 48 is preferably large in order to efficiently absorb the charges generated in the photoelectric conversion layer 36. In order to attenuate X-rays efficiently, the area of the counter electrode 48 is preferably large.

  The X-ray detection apparatus 100A3 may include only a plurality of counter electrodes 48 as an X-ray absorption unit, or may include a plurality of counter electrodes 48 and a plurality of X-ray absorption resin units 46. When the plurality of counter electrodes 48 and the plurality of X-ray absorption resin portions 46 are provided as the X-ray absorption portion, the dose of X-rays irradiated to the TFT 14 can be more effectively reduced.

  Next, the structure of still another X-ray detection apparatus 100B3 of this embodiment will be described with reference to FIG. FIG. 10 is a schematic cross-sectional view of the X-ray detection apparatus 100B3.

  As shown in FIG. 10, the X-ray detection apparatus 100B3 is different from the X-ray detection apparatus 100A3 in that it has two layers of a first connection layer 22 and a second connection layer 24 as connection layers. The X-ray detection apparatus 100B3 may be the same as the X-ray detection apparatus 100A3 except that it has two connection layers. In the X-ray detection device 100B3, since the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of counter electrodes 48, occurrence of defects due to changes in characteristics of the TFT 14 due to X-ray irradiation is suppressed. , Excellent in operational stability.

  The first connection layer 22 and the second connection layer 24 included in the X-ray detection apparatus 100B3 may be the same as the first connection layer 22 and the second connection layer 24 included in the X-ray detection apparatus 100B2 of the present embodiment. In the X-ray detection apparatus 100B3, the first connection layer 22 provided on the active matrix substrate 10 and the second connection layer 24 provided on the counter substrate 30 are directly bonded, so that the connection stability between the two substrates is stable. Is excellent.

  The X-ray detection apparatus according to the embodiment of the present invention is not limited to the semiconductor device according to Embodiment 1 of the present invention and the semiconductor device according to Embodiment 2 of the present invention. The X-ray detection apparatus according to the embodiment of the present invention may be a combination of the first and second embodiments of the present invention, such as the X-ray detection apparatus 100A4 illustrated in FIG. 11 or the X-ray detection apparatus 100B4 illustrated in FIG. Good. FIG. 11 shows a schematic cross-sectional view of the X-ray detection apparatus 100A4, and FIG. 12 shows a schematic cross-sectional view of the X-ray detection apparatus 100B4.

  As shown in FIG. 11, the X-ray detection apparatus 100A4 is different from the X-ray detection apparatus 100A1 in that it further includes a plurality of counter electrodes 48 as an X-ray absorption unit. The X-ray detection apparatus 100A4 may be the same as the X-ray detection apparatus 100A1 except that the X-ray detection apparatus 100A4 further includes a plurality of counter electrodes 48 as an X-ray absorber. The X-ray absorption unit included in the X-ray detection apparatus 100 </ b> A <b> 4 is not limited to the plurality of counter electrodes 48.

  In the X-ray detection apparatus 100A4, the amount of X-rays applied to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of counter electrodes 48 and the X-ray absorption connection layer 40 that are X-ray absorption units. Occurrence of defects due to characteristic changes of the TFT 14 is suppressed, and the operation stability is excellent. Since the X-ray detection apparatus 100A4 has both the X-ray absorption unit and the X-ray absorption resin layer, the X-ray dose irradiated to the TFT 14 can be more effectively reduced.

  As shown in FIG. 12, the X-ray detection apparatus 100B4 has two layers of a first X-ray absorption connection layer 42 and a second X-ray absorption connection layer 44 as an X-ray absorption connection layer. And different. The X-ray detection apparatus 100B4 may be the same as the X-ray detection apparatus 100A4 except that it has two X-ray absorption connection layers. In the X-ray detection apparatus 100B4, the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the plurality of counter electrodes 48 and the X-ray absorption connection layer 40. The occurrence of malfunctions is suppressed, and the operation stability is excellent. In the X-ray detection apparatus 100B4, the first X-ray absorption connection layer 42 provided on the active matrix substrate 10 and the second X-ray absorption connection layer 44 provided on the counter substrate 30 are directly bonded to each other. Excellent connection stability.

(Embodiment 3)
Next, the structure of the X-ray detection apparatus 200A1 according to Embodiment 3 of the present invention will be described with reference to FIG. FIG. 13 is a schematic cross-sectional view of the X-ray detection apparatus 200A1.

  As shown in FIG. 13, the X-ray detection apparatus 200A1 is different from the counter substrate 30 of the X-ray detection apparatus 100A1 in the configuration of the counter substrate 50. The X-ray detection apparatus 200A1 may be the same as the X-ray detection apparatus 100A1 except for the counter substrate 50. In the X-ray detection apparatus 200A1, since the amount of X-rays irradiated to the semiconductor layer 14i of the TFT 14 is reduced by the X-ray absorption connection layer 40, the characteristic change of the TFT 14 due to X-ray irradiation can be reduced without reducing the resolution. Suppressed and has excellent operational stability.

  The counter substrate 50 of the X-ray detection apparatus 200A1 has a photoelectric conversion substrate 51 and an electrode layer 54 formed on the surface of the photoelectric conversion substrate 51 opposite to the active matrix substrate 10 side.

  The photoelectric conversion substrate 51 functions as an X-ray conversion layer. The photoelectric conversion substrate 51 is formed using, for example, CdTe or CdZnTe. Since CdTe and CdZnTe have a high X-ray absorption coefficient, by forming the photoelectric conversion substrate 51 using CdTe or CdZnTe, the X-rays irradiated on the photoelectric conversion substrate 51 can be efficiently detected. Since the photoelectric conversion substrate 51 is formed using CdTe or CdZnTe, the X-ray detection efficiency can be increased. Therefore, such an X-ray detection apparatus is suitable not only for capturing still images but also for capturing moving images. Can also be used. For example, a moving image having a frame period of 33 ms (frame frequency is 30 Hz) can be taken.

  The photoelectric conversion substrate 51 is formed by, for example, the Bridgman method, the gradient end freeze method, or the travel heating method. By using the photoelectric conversion substrate 51, the X-ray detection apparatus 200A1 does not require a step of forming a photoelectric conversion layer, and can reduce the number of manufacturing steps. The thickness of the photoelectric conversion substrate 51 is, for example, about 0.5 mm.

  The electrode layer 54 may be formed so as to cover almost the entire surface of the photoelectric conversion substrate 51. The electrode layer 54 is formed using a metal, for example. The electrode layer 54 is preferably formed using a metal having a high X-ray transmittance, such as Al. The electrode layer 54 may be formed using a transparent conductive material.

The X-ray absorption connection layer 40 may be in direct contact with the photoelectric conversion substrate 51 or may not be in direct contact with the photoelectric conversion substrate 51. The counter substrate 50 may further have an electron blocking layer (not shown) between the photoelectric conversion substrate 51 and the X-ray absorption connection layer 40. The electron blocking layer is an insulating layer, and can be formed using, for example, aluminum oxide (AlO _x ). The electron blocking layer can reduce dark current when the photoelectric conversion substrate 51 is not irradiated with X-rays. For example, when a positive voltage is applied to the electrode layer 34, the electron blocking layer can prevent electrons from moving from the X-ray absorption connection layer 40 to the photoelectric conversion substrate 51.

  The counter substrate 50 may further include a plurality of counter electrodes (not shown) between the photoelectric conversion substrate 51 and the X-ray absorption connection layer 40. When the counter substrate 50 has an electron blocking layer, the plurality of counter electrodes can be provided between the electron blocking layer and the X-ray absorption connection layer 40. Each of the counter electrodes typically overlaps any one of the X-ray absorption connection regions 40a. The counter electrode is formed using a metal such as Ta or Al. The counter electrode is formed by, for example, forming a metal film by sputtering deposition on the surface of the counter substrate 50 on the photoelectric conversion substrate 51 side, and patterning each so as to overlap with any one of the X-ray absorption connection regions 40a. Can be formed. When the counter substrate 50 further includes a plurality of counter electrodes, the charges generated in the photoelectric conversion substrate 51 due to the X-ray irradiation are collected only on the counter electrode corresponding to the irradiated position. Crosstalk is effectively suppressed.

  The X-ray detection apparatus of the present embodiment is not limited to the X-ray detection apparatus 200A1 having the counter substrate 50 in place of the counter substrate 30 of the X-ray detection apparatus 100A1. Another X-ray detection apparatus according to this embodiment includes a photoelectric conversion substrate 51 and a photoelectric conversion instead of the substrate 32, the electrode layer 34, and the photoelectric conversion layer 36 in the configuration of the counter substrate 30 included in the X-ray detection apparatus 100A2. An electrode layer 54 formed on the surface of the substrate 51 opposite to the active matrix substrate 10 side may be included. Still another X-ray detection apparatus according to this embodiment includes a photoelectric conversion substrate 51, a photoelectric conversion substrate 36, an electrode layer 34, and a photoelectric conversion layer 36 instead of the substrate 32, the electrode layer 34, and the photoelectric conversion layer 36 in the configuration of the counter substrate 30 included in the X-ray detection device 100A3. You may have the electrode layer 54 formed on the surface on the opposite side to the active-matrix board | substrate 10 side of the conversion board | substrate 51. FIG. Still another X-ray detection apparatus according to this embodiment includes a photoelectric conversion substrate 51, a photoelectric conversion substrate 36, an electrode layer 34, and a photoelectric conversion layer 36 instead of the substrate 32, the electrode layer 34, and the photoelectric conversion layer 30 in the configuration of the counter substrate 30 included in the X-ray detection device 100A4. You may have the electrode layer 54 formed on the surface on the opposite side to the active-matrix board | substrate 10 side of the conversion board | substrate 51. FIG.

  In the X-ray detection apparatus according to the present embodiment, the amount of X-rays irradiated to the semiconductor layer of the TFT is reduced by the X-ray absorption resin layer and / or the X-ray absorption part. The characteristic change of the TFT due to the beam irradiation is suppressed, and the operation stability is excellent.

  The X-ray detection apparatus of the present embodiment is not limited to the above. Still another X-ray detection apparatus of the present embodiment described below includes a first X-ray absorption connection layer or first connection layer provided on an active matrix substrate, and a second X-ray absorption connection layer provided on a counter substrate. Alternatively, since the second connection layer is directly bonded, in addition to excellent operational stability, it has excellent connection stability between both substrates.

  Still another X-ray detection apparatus according to this embodiment includes an X-ray detection apparatus 100B1, an X-ray detection apparatus 100B2, an X-ray detection apparatus 100B3, or a counter substrate 30 included in the X-ray detection apparatus 100B4. It may replace with the layer 34 and the photoelectric converting layer 36, and may have the photoelectric converting substrate 51 and the electrode layer 54 formed on the surface on the opposite side to the active matrix substrate 10 side of the photoelectric converting substrate 51. .

  The manufacturing method of the X-ray detection apparatus of the present embodiment is the same as the X-ray detection apparatus 100A1, the X-ray detection apparatus 100A2, the X-ray detection apparatus 100A3, the X-ray detection apparatus 100A4, and the X-ray, except that the configuration of the counter substrate is different. The manufacturing method of the detection device 100B1, the X-ray detection device 100B2, the X-ray detection device 100B3, or the X-ray detection device 100B4 may be the same.

  The present invention can be widely applied to, for example, a flat panel type X-ray detection apparatus having an active matrix substrate.

10 active matrix substrate 12 substrate 14 TFT
14i Semiconductor layer 16 Pixel electrode 30, 50 Counter substrate 32 Substrate 34, 54 Electrode layer 36 Photoelectric conversion layer 51 Photoelectric conversion substrate 40 X-ray absorption connection layer 40a X-ray absorption connection region 42 First X-ray absorption connection layer 42a First X-ray absorption Connection region 44 Second X-ray absorption connection layer 44a Second X-ray absorption connection region 46 X-ray absorption resin portion 48 Counter electrode 20 Connection layer 20a Connection region 22 First connection layer 22a First connection region 24 Second connection layer 24a Second connection Area 100A1, 100B1, 100A2, 100B2, 100A3, 100B3, 100A4, 100B4, 200A1 X-ray detection apparatus

Claims (6)

A first substrate;
A second substrate or a photoelectric conversion substrate disposed to face the first substrate;
A plurality of thin film transistors supported by the first substrate;
A plurality of semiconductor layers each included in any of the plurality of thin film transistors;
A plurality of pixel electrodes each connected to any of the plurality of thin film transistors;
An electrode layer supported on the second substrate and a photoelectric conversion layer formed on the electrode layer, or an electrode layer formed on a surface opposite to the first substrate side of the photoelectric conversion substrate;
Having at least one X-ray absorption connection layer provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate;
The at least one X-ray absorption connection layer contains an element having a linear attenuation coefficient of 200 cm ⁻¹ or more at 20 keV, and each of the plurality of pixel electrodes has a plurality of pixel electrodes when viewed from the normal direction of the first substrate. A semiconductor device having a plurality of X-ray absorption connection regions overlapping at least a part of any one and all of any one of the plurality of semiconductor layers. The at least one X-ray absorption connection layer has conductivity, includes a resin,
A first X-ray absorption connection layer formed on the plurality of pixel electrodes, each of which is at least a part of any one of the plurality of pixel electrodes when viewed from the normal direction of the first substrate; A first X-ray absorption connection layer having a plurality of first X-ray absorption connection regions overlapping with any one of the plurality of semiconductor layers;
A second X-ray absorption connection layer formed on the photoelectric conversion layer or on the surface of the photoelectric conversion substrate on the first substrate side and having a plurality of second X-ray absorption connection regions;
2. The semiconductor device according to claim 1, wherein each of the plurality of second X-ray absorption connection regions is directly bonded to any one of the plurality of first X-ray absorption connection regions. A first substrate;
A second substrate or a photoelectric conversion substrate disposed to face the first substrate;
A plurality of thin film transistors supported by the first substrate;
A plurality of semiconductor layers each included in any of the plurality of thin film transistors;
A plurality of pixel electrodes each connected to any of the plurality of thin film transistors;
At least one connection layer, each having a plurality of connection regions overlapping any of the plurality of pixel electrodes;
An electrode layer supported on the second substrate and a photoelectric conversion layer formed on the electrode layer, or an electrode layer formed on a surface opposite to the first substrate side of the photoelectric conversion substrate;
An X-ray absorption part provided between the plurality of semiconductor layers and the photoelectric conversion layer or the photoelectric conversion substrate;
The X-ray absorber includes an element having a linear attenuation coefficient of 200 cm ⁻¹ or more at 20 keV, and overlaps the plurality of semiconductor layers when viewed from the normal direction of the first substrate. The X-ray absorption unit includes a plurality of counter electrodes provided between the photoelectric conversion layer or the photoelectric conversion substrate and the at least one connection layer,
4. The semiconductor device according to claim 3, wherein each of the plurality of counter electrodes overlaps any one of the plurality of semiconductor layers when viewed from the normal direction of the first substrate. The X-ray absorption part includes a plurality of X-ray absorption resin parts,
5. The semiconductor device according to claim 3, wherein each of the plurality of X-ray absorbing resin portions overlaps all of any one of the plurality of semiconductor layers when viewed from a normal direction of the first substrate. The at least one connection layer has electrical conductivity and includes a resin;
A plurality of first connection layers formed on the plurality of pixel electrodes, each overlapping at least a part of any one of the plurality of pixel electrodes when viewed from the normal direction of the first substrate. A first connection layer having a first connection region of
A second connection layer formed on the photoelectric conversion layer or on the surface of the photoelectric conversion substrate on the first substrate side and having a plurality of second connection regions;
6. The semiconductor device according to claim 3, wherein each of the plurality of second connection regions is directly bonded to any one of the plurality of first connection regions.

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