JP2013157347A - Imaging device and method of manufacturing the same, and imaging display system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imaging device and a method of manufacturing the same capable of improving an image quality of a captured image, and to provide an imaging display system having the imaging device.SOLUTION: An imaging device 1 has: a plurality of photoelectric conversion elements 111A and drive elements 111B for those, that are formed on a substrate 11; flattening films 113A and 113B arranged on upper layer sides of the photoelectric conversion elements 111A and the drive elements 111B; and a wavelength conversion member 20 arranged on an upper layer of the flattening film 113B. The flattening film 113A consists of a black film.

Description

  The present disclosure relates to an imaging device having a sensor substrate including a photoelectric conversion element, a manufacturing method thereof, and an imaging display system including such an imaging device.

  2. Description of the Related Art Conventionally, various devices have been proposed as an image pickup device in which a photoelectric conversion element (photodiode) is built in each pixel (image pickup pixel) (for example, see Patent Document 1). As an example of an imaging apparatus having such a photoelectric conversion element, a so-called optical touch panel, a radiation imaging apparatus, and the like can be given.

Japanese Patent Laid-Open No. 7-86545

  By the way, generally in an imaging device as described above, a captured image is obtained by driving (imaging driving) a plurality of pixels. Various methods for improving the image quality of the captured image obtained in this way have been proposed, but further improvement methods are desired.

  The present disclosure has been made in view of such problems, and an object thereof is to provide an imaging device capable of improving the image quality of a captured image, a manufacturing method thereof, and an imaging display system including such an imaging device. There is to do.

  An imaging apparatus according to an embodiment of the present disclosure includes a sensor substrate having a plurality of photoelectric conversion elements formed on a substrate and a driving element thereof, and a planarization film disposed on an upper layer side of the photoelectric conversion elements and the driving elements. The chemical film is a black film.

  The imaging display system of the present disclosure includes the imaging device of the present disclosure and a display device that displays an image based on an imaging signal obtained by the imaging device.

  The manufacturing method of the imaging device of the present disclosure includes a step of forming a sensor substrate. The step of forming the sensor substrate includes a step of forming a plurality of photoelectric conversion elements and their driving elements on the substrate, and a step of forming a flattening film made of a black film on the upper side of the photoelectric conversion elements and the driving elements. Contains.

  In the imaging device, the manufacturing method thereof, and the imaging display system of the present disclosure, the planarization film on the upper layer side of the photoelectric conversion element and the driving element in the sensor substrate is made of a black film. As a result, light irradiation to the drive element is prevented, and deterioration of the characteristics of the drive element due to light leakage is suppressed. In addition, stray light is prevented from entering the photoelectric conversion element, and noise components in the imaging signal are reduced.

  According to the imaging apparatus, the manufacturing method thereof, and the imaging display system of the present disclosure, since the planarization film on the upper layer side of the photoelectric conversion element and the driving element in the sensor substrate is made of a black film, the driving element caused by light leakage Of the image pickup signal due to the incidence of stray light can be reduced. Therefore, the image quality of the captured image can be improved.

It is sectional drawing showing the structural example of the radiation imaging device which concerns on one embodiment of this indication. FIG. 2 is a block diagram illustrating a configuration example of a sensor substrate illustrated in FIG. 1. FIG. 2 is a plan view illustrating a configuration example of a sensor substrate illustrated in FIG. 1. It is a figure showing the cross-sectional structural example along the III-III line | wire shown in FIG. It is sectional drawing represented to 1 process in the manufacturing method of the radiation imaging device shown in FIG. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. FIG. 8 is a cross-sectional diagram illustrating a process following the process in FIG. 7. FIG. 9 is a cross-sectional diagram illustrating a process following the process in FIG. 8. FIG. 10 is a cross-sectional diagram illustrating a process following the process in FIG. 9. It is sectional drawing showing the structure and effect | action of the radiation imaging device which concerns on a comparative example. It is sectional drawing for demonstrating an effect | action of the radiation imaging device shown in FIG. It is sectional drawing showing the structural example of the radiation imaging device which concerns on a modification. It is a schematic diagram showing schematic structure of the radiation imaging display system which concerns on an application example. It is a schematic diagram showing schematic structure of the imaging device which concerns on another modification.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The description will be given in the following order.

1. Embodiment (Example in which the flattening film is formed of a black film in the radiation imaging apparatus)
2. Modified example (example in which a flattened film made of a black film is separated from an electrode of a photoelectric conversion element)
3. Application example (application example to radiation imaging display system)
4). Other variations (examples of imaging devices other than radiation imaging devices)

<Embodiment>
[Cross-sectional configuration of radiation imaging apparatus 1]
FIG. 1 illustrates a cross-sectional configuration example of an imaging apparatus (radiation imaging apparatus 1) according to an embodiment of the present disclosure. The radiation imaging apparatus 1 receives radiation after wavelength conversion of radiation represented by α rays, β rays, γ rays, and X rays, and reads image information based on the radiation (images a subject). The radiation imaging apparatus 1 is suitably used as an X-ray imaging apparatus for medical use and other nondestructive inspections such as baggage inspection.

  The radiation imaging apparatus 1 has a wavelength conversion member 20 (described later) disposed on a sensor substrate 10. The sensor substrate 10 and the wavelength conversion member 20 are manufactured as separate modules.

  The sensor substrate 10 has a plurality of pixels (unit pixels P described later). In the sensor substrate 10, a pixel circuit including a plurality of photodiodes 111A (photoelectric conversion elements) and thin film transistors (TFTs) 111B as driving elements of the photodiodes 111A is formed on the surface of the substrate 11. It is a thing. In the present embodiment, the photodiode 111A and the thin film transistor 111B are juxtaposed on the substrate 11 made of glass or the like, and part of them (here, a gate insulating film 121 and a first interlayer insulating film described later). 112A and the second interlayer insulating film 112B) are common layers.

The gate insulating film 121 is provided on the substrate 11, for example, a single layer film made of one of a silicon oxide (SiO ₂ ) film, a silicon oxynitride (SiON) film, and a silicon nitride film (SiN), or these It is comprised by the laminated film which consists of 2 or more types of these.

  The first interlayer insulating film 112A is provided on the gate insulating film 121 and is made of an insulating film such as a silicon oxide film or a silicon nitride film. The first interlayer insulating film 112A also functions as a protective film (passivation film) that covers a thin film transistor 111B described later.

(Photodiode 111A)
The photodiode 111A is a photoelectric conversion element that generates a charge (photocharge) having a charge amount corresponding to the amount of incident light (amount of received light) and accumulates the charge therein, for example, a PIN (Positive Intrinsic Negative Diode) type photodiode. Consists of. In the photodiode 111A, the sensitivity range is, for example, the visible range (the light reception wavelength band is the visible range). For example, the photodiode 111A is disposed in a selective region on the substrate 11 via a gate insulating film 121 and a first interlayer insulating film 112A.

  Specifically, in the photodiode 111A, the lower electrode 124, the n-type semiconductor layer 125N, the i-type semiconductor layer 125I, the p-type semiconductor layer 125P, and the upper electrode 126 are stacked in this order on the first interlayer insulating film 112A. Become. Among these, the n-type semiconductor layer 125N, the i-type semiconductor layer 125I, and the p-type semiconductor layer 125P correspond to a specific example of “a photoelectric conversion layer” in the present disclosure. In this example, the n-type semiconductor layer 125N is provided on the substrate side (lower side) and the p-type semiconductor layer 125P is provided on the upper side, but the opposite structure, that is, the lower side (substrate side) is provided. A structure in which a p-type semiconductor layer and an n-type semiconductor layer on the upper side may be employed.

  The lower electrode 124 is an electrode for reading signal charges from the photoelectric conversion layer (n-type semiconductor layer 125N, i-type semiconductor layer 125I, p-type semiconductor layer 125P), and is connected to a drain electrode 123D described later in the thin film transistor 111B. Has been. The lower electrode 124 has a three-layer structure (Mo / Al / Mo) in which molybdenum (Mo), aluminum (Al), and molybdenum are stacked, for example.

  The n-type semiconductor layer 125N is made of amorphous silicon (amorphous silicon: a-Si), for example, and forms an n + region. The thickness of the n-type semiconductor layer 125N is, for example, about 10 nm to 50 nm.

  The i-type semiconductor layer 125I is a semiconductor layer having lower conductivity than the n-type semiconductor layer 125N and the p-type semiconductor layer 125P, for example, an undoped intrinsic semiconductor layer, and is made of, for example, amorphous silicon (a-Si). Yes. The thickness of the i-type semiconductor layer 125I is, for example, about 400 nm to 1000 nm. The greater the thickness, the higher the photosensitivity.

  The p-type semiconductor layer 125P is made of amorphous silicon (a-Si), for example, and forms a p + region. The thickness of the p-type semiconductor layer 125P is, for example, about 40 nm to 50 nm.

  The upper electrode 126 is an electrode for supplying, for example, a reference potential (bias potential) at the time of photoelectric conversion to the above-described photoelectric conversion layer, and is connected to a wiring layer 127 which is a power supply wiring for supplying a reference potential. The upper electrode 126 is made of a transparent conductive film such as ITO (Indium Tin Oxide).

(Thin film transistor 111B)
The thin film transistor 111B is made of, for example, a field effect transistor (FET). In the thin film transistor 11B, a gate electrode 120 made of, for example, titanium (Ti), Al, Mo, tungsten (W), chromium (Cr) or the like is formed on the substrate 11, and the gate insulating film described above is formed on the gate electrode 120. 121 is formed.

  A semiconductor layer 122 is formed over the gate insulating film 121, and the semiconductor layer 122 has a channel region. The semiconductor layer 122 is made of, for example, polycrystalline silicon, microcrystalline silicon, or amorphous silicon. Or you may be comprised by oxide semiconductors, such as indium gallium zinc oxide (InGaZnO) or zinc oxide (ZnO).

  On the semiconductor layer 122, a source electrode 123S and a drain electrode 123D connected to a signal line for reading and various wirings are formed. Specifically, here, the drain electrode 123D is connected to the lower electrode 124 in the photodiode 111A, and the source electrode 123S is connected to a vertical signal line 18 (source line) described later. Each of the source electrode 123S and the drain electrode 123D is made of, for example, Ti, Al, Mo, W, Cr, or the like.

  In the sensor substrate 10, a second interlayer insulating film 112B, a first planarizing film 113A, a protective film 114, and a second planarizing film 113B are provided in this order on the photodiode 111A and the thin film transistor 111B. .

(Second interlayer insulating film 112B)
The second interlayer insulating film 112B is provided so as to cover the thin film transistor 111B and end portions of the side surface and the upper surface (on the upper electrode 127) of the photodiode 111A. For example, an insulating film such as a silicon oxide film or a silicon nitride film is provided. It consists of a membrane. The second interlayer insulating film 112B corresponds to a specific example of “an interlayer insulating film” in the present disclosure.

(First planarization film 113A)
The first planarizing film 113A is disposed on the upper layer side of the photodiode 111A and the thin film transistor 111B, and is configured of a black film in the present embodiment. Specifically, the black film is made of, for example, a blackened resin (a resin blackened by including the following light-shielding particles). Specifically, the blackening resin is formed by dispersing particles (light-shielding particles) such as carbon (C) and titanium (Ti) in a transparent resin such as acrylic. As a result, the first planarization film 113A may exhibit a certain degree of conductivity. Therefore, it is desirable to make the resistance as high as possible (the conductivity becomes low). The thickness of the first planarizing film 113A is desirably about 2.1 μm or less, for example, in a portion (flat portion) excluding the formation region of the photodiode 111A. This is to achieve both the action of suppressing the incidence of stray light (incident light from adjacent pixels), which will be described later, and the flattening action (breaking prevention action). In the first planarization film 113A, an opening H1 is formed corresponding to the vicinity of the formation region of the photodiode 111A. The side surface of the opening H1 is tapered, and this side surface is disposed on the upper electrode 126 of the photodiode 111A. The first planarization film 113A corresponds to a specific example of “a planarization film” in the present disclosure.

  The protective film 114 is provided on the entire surface of the upper electrode 126, the wiring layer 127, and the first planarizing film 113A, and is made of an insulating film such as a silicon oxide film or a silicon nitride film.

  The second planarization film 113B is provided on the entire surface of the protective film 114, and is made of a transparent resin material such as polyimide, for example.

(Wavelength conversion member 20)
As described above, the wavelength conversion member 20 is manufactured as a module different from the sensor substrate 10 and includes, for example, a scintillator plate (scintillator panel). That is, the wavelength conversion member 20 is a flat plate (plate-shaped) member, and a scintillator layer (wavelength conversion layer) is provided on a transparent substrate such as glass. A protective film having moisture resistance may be further formed on the scintillator layer, or a protective film may be provided so as to cover the entire scintillator layer and the substrate.

For such a wavelength conversion member 20, for example, a scintillator (phosphor) that converts radiation (X-rays) into visible light is used. In other words, the wavelength conversion member 20 has a function of converting the wavelength of radiation (X-rays) incident from the outside into the sensitivity range (visible range) of the photoelectric conversion element 111A. Examples of such phosphors include those obtained by adding thallium (Tl) to cesium iodide (CsI) (CsI; Tl), and those obtained by adding terbium (Tb) to sulfur cadmium oxide (Gd ₂ O ₂ S). BaFX (X is Cl, Br, I, etc.) and the like. The thickness of the scintillator layer is preferably 100 μm to 600 μm. For example, when CsI; Tl is used as the phosphor material, the thickness is 600 μm, for example. In addition, this scintillator layer can be formed into a film on a transparent substrate, for example using a vacuum evaporation method. Here, the scintillator plate as described above is exemplified as the wavelength conversion member 20, but any wavelength conversion member capable of converting the wavelength of radiation into the sensitivity range of the photodiode 111A may be used, and the material is not particularly limited.

[Detailed Configuration of Sensor Board 10]
FIG. 2 shows a functional block configuration of the sensor substrate 10 as described above. The sensor substrate 10 has a pixel unit 12 as an imaging region (imaging unit) on a substrate 11, and a row scanning unit 13, a horizontal selection unit 14, a column scanning unit 15, and the like are arranged in a peripheral region of the pixel unit 12. A peripheral circuit (drive circuit) including the system control unit 16 is included.

(Pixel part 12)
The pixel unit 12 includes, for example, unit pixels P that are two-dimensionally arranged in a matrix (hereinafter sometimes simply referred to as “pixels”), and the unit pixel P includes the photodiode 111A and the thin film transistor 111B described above. It is out. In the unit pixel P, for example, a pixel drive line 17 (for example, a row selection line and a reset control line: a gate line) is wired for each pixel row, and a vertical signal line 18 (source line) is wired for each pixel column. Yes. The pixel drive line 17 transmits a drive signal for reading a signal from the unit pixel P. One end of the pixel drive line 17 is connected to an output end corresponding to each row of the row scanning unit 13.

  Here, FIG. 3 illustrates a planar configuration example of the unit pixel P in the sensor substrate 10 (pixel unit 12). Thus, in the unit pixel P, the drain electrode 123D of the thin film transistor 111B (driving element) is connected to the lower electrode 124 of the photodiode 111A, and the source electrode 123S is connected to the vertical signal line 18. 3 corresponds to the cross-sectional configuration of the sensor substrate 10 shown in FIG. 1. The cross-sectional configuration example along the line II-II shown in FIG.

  On the other hand, FIG. 4 shows a cross-sectional configuration example of the sensor substrate 10 taken along the line III-III shown in FIG. The cross-sectional configuration shown in FIG. 4 is basically the same as the cross-sectional configuration shown in FIG. 1, but the vertical signal line 18 is formed on the substrate 11 instead of the thin film transistor 111B. Specifically, the vertical signal line 18 is provided in a selective region (corresponding to the formation region of the thin film transistor 111B in FIG. 1) between the gate insulating film 121 and the first interlayer insulating film 112A.

(Peripheral circuit)
The row scanning unit 13 illustrated in FIG. 2 includes a shift register, an address decoder, and the like, and is a pixel driving unit that drives each pixel P of the pixel unit 12 in units of rows, for example. A signal (imaging signal) output from each pixel P in the pixel row selected and scanned by the row scanning unit 13 is supplied to the horizontal selection unit 14 through each vertical signal line 18.

  The horizontal selection unit 14 is configured by an amplifier, a horizontal selection switch, and the like provided for each vertical signal line 18.

  The column scanning unit 15 is configured by a shift register, an address decoder, and the like, and drives each of the horizontal selection switches of the horizontal selection unit 14 in order while scanning. By the selective scanning by the column scanning unit 15, the signal of each pixel transmitted through each of the vertical signal lines 18 is sequentially output to the horizontal signal line 19 and is transmitted to the outside of the substrate 11 through the horizontal signal line 19. It has become.

  The circuit portion including the row scanning unit 13, the horizontal selection unit 14, the column scanning unit 15, and the horizontal signal line 19 may be formed directly on the substrate 11, or may be an external control IC (Integrated Circuit). ) May be provided. In addition, these circuit portions may be formed on another substrate connected by a cable or the like.

  The system control unit 16 receives a clock given from the outside of the substrate 11, data for instructing an operation mode, and the like, and outputs data such as internal information of the radiation imaging apparatus 1. The system control unit 16 further includes a timing generator that generates various timing signals. Based on the various timing signals generated by the timing generator, the row scanning unit 13, the horizontal selection unit 14, the column scanning unit 15, and the like. The peripheral circuit is driven and controlled.

[Manufacturing Method of Imaging Device 1]
The radiation imaging apparatus 1 as described above can be manufactured, for example, as follows. 5 to 10 show an example of a method for manufacturing the radiation imaging apparatus 1 (particularly, a method for manufacturing the sensor substrate 10) in cross-sectional view in the order of steps.

  First, the sensor substrate 10 is manufactured. Specifically, first, as shown in FIG. 5, a thin film transistor 111B is formed on a substrate 11 made of glass, for example, by a known thin film process. Subsequently, a first interlayer insulating film 112A made of the above-described material is formed on the thin film transistor 111B by using, for example, a CVD (Chemical Vapor Deposition) method and a photolithography method. After that, the lower electrode 124 made of the above-described material is formed by using, for example, a sputtering method and a photolithography method so as to be electrically connected to the drain electrode 123D in the thin film transistor 111B.

  Next, as shown in FIG. 6, an n-type semiconductor layer 125N, an i-type semiconductor layer 125I, and a p-type semiconductor layer 125P made of the above-described materials are formed in this order on the entire surface of the first interlayer insulating film 112A, for example, by CVD. The film is formed by After that, the upper electrode 126 made of the above-described material is formed in a region where the photodiode 111A is to be formed on the p-type semiconductor layer 125P by using, for example, a sputtering method and a photolithography method.

  Subsequently, as shown in FIG. 7, the stacked structure of the formed n-type semiconductor layer 125N, i-type semiconductor layer 125I, and p-type semiconductor layer 125P is patterned into a predetermined shape by using, for example, a dry etching method. As a result, the photodiode 111 </ b> A is formed on the substrate 11.

  Next, as shown in FIG. 8, the second interlayer insulating film 112B made of the above-described material is formed on the thin film transistor 111B and on the side surface and top surface (upper electrode 127) of the photodiode 111A using, for example, the CVD method and the photolithography method. It is formed so as to cover the upper part. After that, the first planarizing film made of the above-described material (in which light-shielding particles are dispersed in a transparent resin) is formed on the entire surface of the second interlayer insulating film 112B (on the upper side of the photodiode 111A and the thin film transistor 111B). 113A is formed using, for example, a CVD method. Then, for example, by performing etching (dry etching or the like) using a photolithography method, the opening H1 is formed corresponding to the formation region of the photodiode 111A in the first planarization film 113A. Thereby, the first planarizing film 113A made of the black film described above is formed.

  Subsequently, as shown in FIG. 9, a wiring layer 127 made of, for example, Al, Cu, or the like is formed in the opening H1 (on the upper electrode 126) in the first planarizing film 113A, for example, by sputtering or photolithography. Use to form.

  After that, as shown in FIG. 10, the protective film 114 and the second planarization film 113B made of the above-described materials are formed in this order on the entire surface of the first planarization film 113A, the upper electrode 126, and the wiring layer 127, for example. A film is formed using a CVD method. Thereby, the sensor substrate 10 shown in FIG. 1 is completed.

  Finally, the wavelength conversion member 20 separately manufactured by the above-described manufacturing method is bonded onto the sensor substrate 10 (for example, the peripheral region of the pixel portion 12 is bonded with a sealant or the like, or the periphery of the pixel portion 12 or the panel Hold down the entire surface to fix it). Thereby, the radiation imaging apparatus 1 shown in FIG. 1 is completed.

[Operation and Effect of Imaging Device 1]
(1. Imaging operation)
In this radiation imaging apparatus 1, for example, when radiation irradiated from a radiation source (not shown) (for example, an X-ray source) and transmitted through a subject (detector) is incident, the incident radiation is photoelectrically converted after wavelength conversion, and an image of the subject is obtained. Is obtained as an electrical signal (imaging signal). Specifically, the radiation incident on the radiation imaging apparatus 1 is first converted into a wavelength in the sensitivity region (here, visible region) of the photodiode 111 </ b> A by the wavelength conversion member 20 (visible light is emitted from the wavelength conversion member 20. To do). The visible light emitted from the wavelength conversion member 20 in this way enters the sensor substrate 10.

  In the sensor substrate 10, when a predetermined reference potential (bias potential) is applied to one end (for example, the upper electrode 126) of the photodiode 111A via the wiring 127, light incident from the upper electrode 126 side is The signal charge is converted into a signal charge corresponding to the amount of received light (photoelectric conversion is performed). The signal charge generated by this photoelectric conversion is taken out as a photocurrent from the other end (for example, the lower electrode 124) side of the photodiode 111A.

  Specifically, the charge generated by photoelectric conversion in the photodiode 111A is read out as a photocurrent and output as an imaging signal from the thin film transistor 111B. The imaging signal output in this way is output (read out) to the vertical signal line 18 in accordance with the row scanning signal transmitted from the row scanning unit 13 via the pixel drive line 17. The imaging signal output to the vertical signal line 18 is output to the horizontal selection unit 14 for each pixel column through the vertical signal line 18. Then, by the selective scanning by the column scanning unit 15, the imaging signal of each pixel transmitted through each of the vertical signal lines 18 is sequentially output to the horizontal signal line 19, and is transmitted to the outside of the substrate 11 through the horizontal signal line 19. (Output data Dout is output to the outside). As described above, a captured image using radiation is obtained in the radiation imaging apparatus 1.

(2. Action of the first planarizing film 113A)
Here, with reference to FIGS. 11 and 12, the operation of the first planarization film 113A in the radiation imaging apparatus 1 of the present embodiment will be described in detail in comparison with a comparative example.

(Comparative example)
FIG. 11 illustrates a cross-sectional configuration of a radiation imaging apparatus (radiation imaging apparatus 100) according to a comparative example. In the radiation imaging apparatus 100 of this comparative example, a transparent film (polyimide film or the like) is used instead of the sensor substrate 10 having the first planarization film 113A described above in the radiation imaging apparatus 1 of the present embodiment shown in FIG. A sensor substrate 101 having a first planarizing film 103A made of is provided.

  In the radiation imaging apparatus 100, as described above, in the sensor substrate 101, the first planarization film 103A on the upper layer side of the photodiode 111A and the thin film transistor 111B is a transparent film. It will occur.

  That is, first, the incident light L101 from the outside passes through the first planarization film 103A and enters the thin film transistor 111B (the thin film transistor 111B is irradiated with light). For this reason, light leakage due to the incident light L101 occurs in the thin film transistor 111B. Such light leakage causes deterioration of characteristics (readout characteristics) in the thin film transistor 111B, leading to deterioration of the image quality of the captured image.

  In addition, since stray light L102 from an adjacent pixel or the like enters the photodiode 111A via the first planarization film 103A, a noise component in the image pickup signal obtained from the photodiode 111A (due to the stray light L102) Noise component) increases. In other words, the image quality of the captured image is deteriorated also from this point.

(This embodiment)
On the other hand, in the radiation imaging apparatus 1 of the present embodiment, as shown in FIGS. 1 and 12, the first planarization film 113A on the upper layer side of the photodiode 111A and the thin film transistor 111B in the sensor substrate 10 is a black film. Consists of.

  Accordingly, as shown in FIG. 12, unlike the comparative example, the incident light L1 from the outside does not pass through the first planarization film 113A. That is, the incident light L1 is prevented from entering the thin film transistor 111B (the thin film transistor 111B is irradiated with light), and light leakage in the thin film transistor 111B is prevented. As a result, deterioration of characteristics (reading characteristics) due to the incident light L1 in the thin film transistor 111B can be suppressed.

  Further, stray light L2 from adjacent pixels or the like is prevented from entering the photodiode 111A via the first planarization film 113A. Thereby, the noise component (noise component resulting from stray light L2) in the imaging signal obtained from the photodiode 111A is reduced.

  As described above, in the present embodiment, the first planarization film 113A on the upper layer side of the photodiode 111A and the thin film transistor 111B in the sensor substrate 10 is made of a black film. Can be suppressed, and noise components in the imaging signal due to the incidence of stray light can be reduced. Therefore, the image quality of the captured image can be improved.

  Further, for example, it is not necessary to separately provide a member (such as a light-shielding film) for preventing the incident light L1 and stray light L2 from entering, so that it is possible to improve the image quality while suppressing the manufacturing cost.

<Modification>
Then, the modification of the said embodiment is demonstrated. In addition, the same code | symbol is attached | subjected to the same thing as the component in embodiment, and description is abbreviate | omitted suitably.

  FIG. 13 illustrates a cross-sectional configuration example of an imaging apparatus (radiation imaging apparatus 1A) according to a modification. A radiation imaging apparatus 1 </ b> A of this modification is provided with a sensor substrate 10 </ b> A described below in place of the sensor substrate 10 in the radiation imaging apparatus 1 of the above embodiment.

  The sensor substrate 10A has basically the same configuration as the sensor substrate 10 such that the first planarizing film 113A made of a black film is provided. However, the sensor substrate 10A differs from the sensor substrate 10 in the following points. Yes.

  That is, in the sensor substrate 10A, as indicated by reference numerals P1a and P1b in FIG. 13, the first planarization film 113A and the electrodes (the lower electrode 124 and the upper electrode 126) in the photodiode 111A are isolated from each other. Are arranged as follows. Specifically, the side surface of the opening H1 in the planarization film 113A is disposed on the second interlayer insulating film 112B, unlike the case of the sensor substrate 10 (arranged on the upper electrode 126). That is, in the sensor substrate 10, the first planarization film 113 </ b> A in which the light-shielding particles are dispersed and the upper electrode 126 are partially in contact, whereas in the sensor substrate 10 </ b> A, the first planarization film 113 </ b> A and The upper electrode 126 is not in contact (electrically insulated).

  Thereby, in this modification, in addition to the effect in the said embodiment, the following effects can also be acquired. That is, first, the above-described black film (film in which light-shielding particles are dispersed in a transparent resin) contains impurities (mixtures) called particles in addition to showing some conductivity. A leak path occurs. For this reason, as described above, the first planarization film 113A and the electrodes (the lower electrode 124 and the upper electrode 126) in the photodiode 111A are disposed so as to be separated from each other, thereby avoiding such a leak path. can do. As a result, it is possible to prevent deterioration in characteristics of the photodiode 111A and further improve the image quality of the captured image.

<Application example>
Subsequently, an application example of the imaging device (radiation imaging device) according to the above-described embodiment and the modified example to an imaging display system (radiation imaging display system) will be described.

  FIG. 14 schematically illustrates a schematic configuration example of an imaging display system (radiation imaging display system 5) according to an application example. The radiation imaging display system 5 includes radiation imaging devices 1 and 1A having the pixel unit 12 and the like according to the above-described embodiment, an image processing unit 52, and a display device 4, and imaging display using radiation. It is configured as a system (radiation imaging display system).

  The image processing unit 52 generates image data D1 by performing predetermined image processing on the output data Dout (imaging signal) output from the radiation imaging apparatuses 1 and 1A. The display device 4 performs image display on the predetermined monitor screen 40 based on the image data D <b> 1 generated by the image processing unit 52.

  In the radiation imaging display system 5 having such a configuration, the radiation imaging apparatuses 1 and 1A irradiate light (here, radiation) emitted from the light source (here, the radiation source 51 such as an X-ray source) toward the subject 50. Based on the above, the image data Dout of the subject 50 is acquired and output to the image processing unit 52. The image processing unit 52 performs the predetermined image processing described above on the input image data Dout, and outputs the image data (display data) D1 after the image processing to the display device 4. The display device 4 displays image information (captured image) on the monitor screen 40 based on the input image data D1.

  As described above, in the radiation imaging display system 5 of this application example, since the image of the subject 50 can be acquired as an electrical signal in the radiation imaging apparatuses 1 and 1A, an image is transmitted by transmitting the acquired electrical signal to the display apparatus 4. Display can be made. That is, it is possible to observe the image of the subject 50 without using a conventional radiographic film, and it is also possible to handle moving image shooting and moving image display.

<Other variations>
As described above, the technology of the present disclosure has been described with the embodiment, the modification, and the application example. However, the present technology is not limited to the embodiment and the like, and various modifications can be made.

  For example, in the above embodiment and the like, the case where the semiconductor layer in the photodiode 111A and the thin film transistor 111B is mainly composed of an amorphous semiconductor (such as amorphous silicon) has been described as an example. Is not limited. That is, the above-described semiconductor layer may be configured of, for example, a polycrystalline semiconductor (polycrystalline silicon or the like) or a microcrystalline semiconductor (microcrystalline silicon or the like).

  In the above-described embodiment and the like, the case where the first planarizing film 113A is made of a black film has been described as an example. However, the present invention is not limited to this. For example, the second interlayer insulating film 112B or the like is made of a black film. May be. Even in such a configuration, it is possible to obtain the same effects as those of the above-described embodiment and the like.

  Furthermore, in the above-described embodiment and the like, the case where the imaging device is configured as a radiation imaging device has been described as an example. However, the present disclosure is an imaging device other than the radiation imaging device (and imaging other than the radiation imaging display system). It is also possible to apply to a display system. Specifically, for example, as in the imaging device 3 shown in FIG. 15, the sensor substrate 10 or 10 </ b> A described in the above embodiment and the like, and the wavelength conversion member 20 are omitted (not provided). Also good. Even in such a configuration, the same effect can be obtained by providing the “planarizing film” made of the black film described in the above-described embodiment and the like in the sensor substrates 10 and 10A. Is possible.

In addition, this technique can also take the following structures.
(1)
Comprising a sensor substrate having a plurality of photoelectric conversion elements formed on the substrate and their driving elements, and a planarization film disposed on an upper layer side of the photoelectric conversion elements and the driving elements;
An imaging apparatus in which the planarizing film is a black film.
(2)
The imaging device according to (1), wherein the black film is made of a blackening resin.
(3)
The blackening resin is an imaging device according to (2), in which light-shielding particles are dispersed in a transparent resin.
(4)
The photoelectric conversion element is formed by laminating a lower electrode, a photoelectric conversion layer, and an upper electrode in this order,
The imaging device according to (3), wherein the planarizing film, the lower electrode, and the upper electrode are disposed so as to be separated from each other.
(5)
The sensor substrate has an interlayer insulating film that covers at least a side surface and an end of the upper surface of the photoelectric conversion element;
The planarization film has an opening in a formation region of the photoelectric conversion element,
The imaging device according to (4), wherein a side surface of the opening is disposed on the interlayer insulating film.
(6)
The imaging device according to any one of (1) to (5), wherein the photoelectric conversion element is formed of a PIN photodiode.
(7)
A wavelength conversion member that is disposed on the sensor substrate and converts the wavelength of incident radiation into a sensitivity range of the photoelectric conversion element;
The imaging apparatus according to any one of (1) to (6), configured as a radiation imaging apparatus.
(8)
The imaging device according to (7), wherein the radiation is X-rays.
(9)
An imaging device, and a display device that displays an image based on an imaging signal obtained by the imaging device,
The imaging device
Comprising a sensor substrate having a plurality of photoelectric conversion elements formed on the substrate and their driving elements, and a planarization film disposed on an upper layer side of the photoelectric conversion elements and the driving elements;
An imaging display system in which the planarizing film is a black film.
(10)
Forming a sensor substrate;
The step of forming the sensor substrate includes:
Forming a plurality of photoelectric conversion elements and their driving elements on a substrate;
Forming a flattened film made of a black film on an upper layer side of the photoelectric conversion element and the driving element.

  DESCRIPTION OF SYMBOLS 1,1A ... Radiation imaging device 10, 10A ... Sensor board | substrate, 11 ... Board | substrate, 111A ... Photodiode (photoelectric conversion element), 111B ... Thin-film transistor, 112A ... 1st interlayer insulation film, 112B ... 2nd interlayer insulation film, 113A DESCRIPTION OF SYMBOLS ... 1st planarizing film, 113B ... 2nd planarizing film, 114 ... Protective film, 12 ... Pixel part, 17 ... Pixel drive line, 18 ... Vertical signal line, 20 ... Wavelength converting member, 3 ... Imaging device, 4 ... Display device, 5 ... Radiation imaging display system, 50 ... Subject, 51 ... Radiation source, H1 ... Opening, P ... Unit pixel.

Claims (10)

Comprising a sensor substrate having a plurality of photoelectric conversion elements formed on the substrate and their driving elements, and a planarization film disposed on an upper layer side of the photoelectric conversion elements and the driving elements;
An imaging apparatus in which the planarizing film is a black film. The imaging device according to claim 1, wherein the black film is made of a blackening resin. The imaging device according to claim 2, wherein the blackening resin includes light-shielding particles dispersed in a transparent resin. The photoelectric conversion element is formed by laminating a lower electrode, a photoelectric conversion layer, and an upper electrode in this order,
The imaging device according to claim 3, wherein the planarizing film, the lower electrode, and the upper electrode are disposed so as to be separated from each other. The sensor substrate has an interlayer insulating film that covers at least a side surface and an end of the upper surface of the photoelectric conversion element;
The planarization film has an opening in a formation region of the photoelectric conversion element,
The imaging device according to claim 4, wherein a side surface of the opening is disposed on the interlayer insulating film. The imaging apparatus according to claim 1, wherein the photoelectric conversion element is a PIN type photodiode. A wavelength conversion member that is disposed on the sensor substrate and converts the wavelength of incident radiation into a sensitivity range of the photoelectric conversion element;
The imaging device according to claim 1, wherein the imaging device is configured as a radiation imaging device. The imaging device according to claim 7, wherein the radiation is X-rays. An imaging device, and a display device that displays an image based on an imaging signal obtained by the imaging device,
The imaging device
Comprising a sensor substrate having a plurality of photoelectric conversion elements formed on the substrate and their driving elements, and a planarization film disposed on an upper layer side of the photoelectric conversion elements and the driving elements;
An imaging display system in which the planarizing film is a black film. Forming a sensor substrate;
The step of forming the sensor substrate includes:
Forming a plurality of photoelectric conversion elements and their driving elements on a substrate;
Forming a flattened film made of a black film on an upper layer side of the photoelectric conversion element and the driving element.

Images