JP2015110495A - Silicon carbide crystal growth method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide high quality single crystal silicon carbide with less defects.SOLUTION: In a silicon carbide crystal growth method using a solution technique, a melting pot based on SiC is used as a storage section of Si-C solution. When the melting pot is heated, temperature distribution is generated in a manner that increases a temperature with an increasing depth of the Si-C solution from an upper side to a lower side thereof in the melting pot. Also, Si and C originated from the melting pot based on the SiC is eluted from a high temperature region on the surface of the melting pot where the same contacts the Si-C solution and thereby preventing polycrystalline SiC from generating on the surface of the melting pot where the same contacts the Si-C solution. With the silicon carbide solution kept in this state, the same is brought into contact with SiC seed crystals at an upper section thereof so as to allow single SiC crystals to be generated on the SiC seed crystals. By using the melting pot based on the SiC, the method curbs: a composition variation in the Si-C solution; precipitation of the polycrystalline SiC on an inner wall of the melting pot; and generation of metallic carbide formed when added metallic elements M combine with carbon C.

Description

  The present invention relates to a method for crystal growth of silicon carbide. More specifically, the composition variation of the Si—C solution in the crucible is suppressed, and the polycrystals and additive metal elements M and carbon C deposited on the inner wall of the crucible are combined. The present invention relates to a technique capable of suppressing the generation of metal carbide to be formed and obtaining high-quality single crystal silicon carbide with low defects.

  Silicon carbide (SiC) is a wide band gap semiconductor material that has excellent thermal conductivity and chemical stability, and excellent basic physics as a power device from the viewpoint of transistor characteristics such as dielectric breakdown characteristics and saturation drift velocity. It has characteristics. For these reasons, SiC is expected as a material for next-generation power devices, and the commercialization of SiC power devices has also been reported.

  However, the SiC substrate has a problem that the single crystal substrate is not sufficiently low in defect and high in quality, in addition to being expensive compared to the Si substrate.

  The main reason why it is difficult to produce a SiC single crystal substrate with low defects and high quality is that it does not melt under normal pressure. In the case of Si widely used as a substrate for semiconductor devices, the melting point under normal pressure is 1414 ° C. From this Si melt, it is possible to obtain a single crystal with a low defect, high quality and large diameter by the CZ method or the FZ method. it can.

  On the other hand, in the case of SiC, if it is heated under normal pressure, it sublimates at a temperature of about 2000 ° C., so that a crystal growth method by CZ method or FZ method cannot be adopted. Therefore, at present, SiC single crystals are mainly produced by a sublimation method including an improved Rayleigh method.

  However, even if a power device is manufactured using a SiC single crystal obtained by the sublimation method, the characteristics are not necessarily sufficient. The cause is that it is not easy to reduce the defects of the SiC single crystal. Crystal growth by the sublimation method is a precipitation phenomenon from the gas phase, the growth rate is slow, and temperature control in the reaction space is difficult. In recent years, as a result of vigorous improvements and improvements by various research and development institutions, the transition density of micropipes has been reduced, but it has an effect on the electrical characteristics of devices such as threading spiral transition, edge transition, and basal plane transition. The lattice defects to be given are still present at a high density.

  Therefore, recently, a silicon carbide crystal growth method using a solution method has been attracting attention (see, for example, Patent Documents 1 to 3). As described above, SiC itself does not melt under normal pressure. Therefore, in a method for producing an SiC single crystal by a solution method, C is dissolved in a Si melt in a graphite crucible from a high temperature portion below the crucible, and an SiC seed crystal is brought into contact with the Si-C melt, and SiC. An SiC single crystal is obtained by epitaxial growth on a seed crystal. In such a solution method, since crystal growth of SiC proceeds in a state very close to thermal equilibrium, a defect having a lower defect is obtained as compared with a SiC single crystal obtained by a sublimation method.

  There are various methods for the solution method for obtaining the SiC single crystal. In Non-Patent Document 1 (the latest technology of SiC power device), (a) Solvent Transfer Crystal Growth Method (TSM), (b) Slow Cooling Technique (SCT), (c) Vapor Liquid Solid (VLS), and (d) Top Seeded Solution Growth (TSSG). . The term “solution method” as used herein refers to a seeded solution growth method (TSSG).

  In the method of producing a SiC single crystal by the solution method, a Si melt is formed in a graphite crucible. Since the solubility of C in the Si melt is as small as about 1 at%, generally, in order to make C easy to dissolve. A transition metal or the like is added to the Si melt (see Patent Documents 1 to 3).

  The kind and amount of such an additive element promotes dissolution of C, SiC precipitates as a primary crystal from the solution, and the balance is well balanced as a liquid phase, and the additive element does not precipitate carbide and other phases. The crystal polymorphism of SiC is determined in consideration of stable precipitation of the target polymorphism, and a solution composition that increases the growth rate of the single crystal as much as possible.

JP 2000-264790 A JP 2004-002173 A JP 2006-143555 A

"Latest SiC Power Device Technology" Section 1 1.2 SiC solution growth method 41-43 (Science & Technology Co., Ltd., published on May 14, 2010).

  However, the conventional solution method using a graphite crucible has the following problems.

  First, as the SiC single crystal grows, the Si component is gradually lost from the Si—C solution, and the solution composition gradually changes. If the solution composition changes during the growth of the SiC single crystal, the SiC deposition environment naturally changes. As a result, it becomes difficult to continue the single crystal growth of SiC stably for a long time.

  The second is a problem of excessive melting of C from the graphite crucible. While the Si component is gradually lost from the Si-C solution as the SiC single crystal grows, C is continuously supplied from the graphite crucible. Therefore, the result is that C is relatively excessively melted in the Si—C solution, and the Si / C composition ratio in the solution changes.

  The third is a problem of SiC polycrystal precipitation on the surface of the graphite crucible in contact with the Si—C solution on the inner wall surface of the graphite crucible. As described above, when C is excessively melted from the graphite crucible into the Si-C solution, fine SiC polycrystals are easily generated on the inner wall surface of the graphite crucible. Such SiC polycrystals float in the SiC solution and reach the vicinity of the solid-liquid interface between the SiC single crystal and the Si-C solution during crystal growth, resulting in inhibition of single crystal growth.

  The present invention has been made in view of the problems of the conventional method, and the object of the present invention is to reduce the composition fluctuation of the S—C solution compared to the conventional method using a graphite crucible, An object of the present invention is to provide a technique for obtaining single crystal silicon carbide with low defects and high quality by suppressing generation of polycrystals precipitated on the inner wall.

  In order to solve the above-described problems, a silicon carbide crystal growth method according to the present invention is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as an Si-C solution container. The Si—C solution is used to contain a metal element M (M is at least one metal element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu), and the crucible Is heated to elute Si and C from the high temperature region on the surface of the crucible in contact with the Si-C solution into the Si-C solution. Suppressing precipitation of SiC polycrystals on the surface of the crucible in contact with the solution, contacting the SiC seed crystal with the Si-C solution from the top of the crucible, and growing a SiC single crystal on the SiC seed crystal, It is characterized by that.

  Preferably, the heating is performed so as to form a temperature distribution in which the temperature of the Si—C solution in the crucible containing SiC as a main component increases from the upper side to the lower side.

  Preferably, the total content of the metal element M in the Si-C solution is 1 at% to 80 at%.

  Moreover, Preferably, the said Si-C solution is controlled to the temperature range of 1300 degreeC-2300 degreeC by the said heating.

  Further preferably, the heating is performed in a state where the crucible mainly composed of SiC is accommodated in a second crucible made of a heat-resistant carbon material.

  According to the present invention, by using a crucible containing SiC as a main component, the composition fluctuation of the Si-C solution is reduced, and a polycrystal or additive metal element M deposited on the inner wall of the crucible and carbon C are combined. The occurrence of metal carbides is also suppressed. As a result, single crystal silicon carbide with low defects and high quality can be obtained as compared with the conventional method using a graphite crucible.

It is a figure for demonstrating the example of a structure of the principal part of a crystal growth apparatus at the time of carrying out crystal growth of silicon carbide by the method which concerns on this invention. It is a figure for demonstrating notionally the temperature distribution in the Si-C solution at the time of crystal-growing silicon carbide by the method which concerns on this invention. It is a figure for demonstrating notionally that a Si and C elute in a Si-C solution from the wall surface of a SiC crucible at the time of carrying out crystal growth of silicon carbide by the method concerning the present invention. In order to conceptually explain the elution reaction of Si and C from the SiC crucible and the precipitation reaction of SiC onto the SiC seed crystal, which are caused by the silicon carbide crystal growth method of the present invention using the SiC crucible. FIG. In Example 1, it is the optical photograph of the cross section obtained by cut | disconnecting the SiC crucible 1 taken out after crystal growth. It is the result of having simulated the temperature distribution in a furnace by using the single crystal growth conditions of Example 1 as a parameter. It is the optical photograph (A) of the upper surface of the SiC single crystal obtained on the conditions of Example 1, and the optical photograph (B) of a side surface. As comparative example 1, it is the optical photograph (A) of a top surface, and the optical photograph (B) of a side of a SiC crystal grown on the same conditions as Example 1 except having used a graphite crucible instead of a SiC crucible. (A) is an optical photograph of the upper surface of the SiC single crystal obtained in Example 2, and (B) is an optical photograph of the upper surface of the SiC crystal obtained in Comparative Example 2. (A) is an optical photograph of the upper surface of the SiC single crystal obtained in Example 3, and (B) is an optical photograph of the upper surface of the SiC crystal obtained in Comparative Example 3. (A) is an optical photograph of the upper surface of the SiC single crystal obtained in Example 4, and (B) is an optical photograph of the upper surface of the SiC crystal obtained in Comparative Example 4. (A) is an optical photograph of the upper surface of the SiC single crystal obtained in Example 5, and (B) is an optical photograph of the upper surface of the SiC crystal obtained in Comparative Example 5. 6 is an optical photograph of the upper surface of the SiC single crystal obtained in Example 6.

  A silicon carbide crystal growth method by a solution method according to the present invention will be described below with reference to the drawings. In the following description, the present invention will be described in terms of high-frequency heating of the SiC crucible, but the heating method need not be limited to high-frequency heating, depending on the control temperature of the Si-C solution, etc. Other methods such as resistance heating may be used.

  FIG. 1 is a diagram for explaining a configuration example of a main part of a crystal growth apparatus when silicon carbide is crystal-grown by the method according to the present invention.

  In the figure, reference numeral 1 is a crucible mainly composed of SiC, which is a storage part for the Si-C solution, reference numeral 2 is a second crucible made of a heat-resistant carbon material for storing the SiC crucible 1, and reference numeral 3 is a seed crystal. 1 is a Si-C solution formed in the SiC crucible 1, 5 is a crucible rotating shaft for rotating the crucible 1 (and the crucible 2) during SiC crystal growth, and 6 is a seed. A seed crystal rotation axis for holding the crystal 3 and rotating the seed crystal 3 during SiC crystal growth, reference numeral 7 is a susceptor formed of graphite material, and reference numeral 8 is a heat insulating material also formed of graphite material Reference numeral 9 denotes an upper lid for suppressing the evaporation of the Si—C solution, and reference numeral 10 denotes a high-frequency coil for heating the SiC crucible 1 and making the SiC solution 4 have a preferable temperature distribution.

  Although not shown, an exhaust port and an exhaust valve for evacuating the atmosphere in the furnace, and a gas introduction port and a gas introduction valve for introducing gas are provided. Moreover, although the SiC crucible 1 before heating is filled with Si, a C source may be filled together.

FIG. 2 is a diagram for conceptually explaining the temperature distribution in the Si—C solution when silicon carbide is crystal-grown by the method according to the present invention. The curves indicated by T _{1 to} T ₄ in the figure are temperature curves that mean cross sections of isothermal curved surfaces in the Si—C solution, and have a relationship of T ₁ > T ₂ > T ₃ > T _4. . That is, the Si—C solution 4 in the SiC crucible 1 has a temperature distribution that increases from the upper side to the lower side, and each temperature curve (isothermal line) has a temperature distribution that protrudes downward.

In the present invention, the above-mentioned temperature distribution is formed in the Si—C solution 4 by induction heating of the SiC crucible 1 from the high-frequency coil 10, and the crucible is formed from the surface of the SiC crucible 1 in contact with the Si—C solution 4. Si and C derived from SiC, which is the main component, are eluted in the Si-C solution 4. Then, from the upper part of the SiC crucible 1, the SiC seed crystal 3 is brought into contact with the Si—C solution 4 to grow a SiC single crystal on the SiC seed crystal 3. Accordingly, at least the temperature T ₁ among T _{1 to} T ₄ shown in FIG. 2 is set to a temperature high enough to elute Si and C from the SiC crucible 1 into the Si—C solution 4. ₄ is set to a temperature sufficient for SiC to grow as a single crystal on the SiC seed crystal 3.

  FIG. 3 is a diagram for conceptually explaining how Si and C are eluted from the wall surface of the SiC crucible into the Si—C solution when silicon carbide is crystal-grown by the method according to the present invention. In addition, what was shown by M in the figure is a metal element having an effect of increasing the solubility of C in the Si-C solution 4, and the added metal element is not limited to one type, and a plurality of types of metal elements are included. Sometimes added.

  When the temperature distribution described above is formed, Si and C using SiC as the main component of the crucible 1 from the surface (high temperature region) of the SiC crucible 1 in contact with the Si—C solution 4 become Si—C solution 4. Elute in. As a matter of course, the eluted Si and C become new Si components and C components of the Si—C solution 4, and become a source of a single crystal growing on the SiC seed crystal 3.

  In an environment in which elution of Si and C from the SiC crucible 1 into the Si—C solution 4 occurs, the problem of precipitation of SiC polycrystals on the surface of the crucible in contact with the Si—C solution does not occur. . This is because there is no room for Si and C to precipitate as SiC under the condition that SiC, which is the main component of the crucible 1, elutes into the Si-C solution 4 as Si and C. In other words, by using a crucible mainly composed of SiC as the Si—C solution container, precipitation of SiC polycrystals on the surface of the crucible in contact with the Si—C solution is suppressed.

  In addition, the use of the SiC crucible also has an effect of suppressing the formation of metal carbide formed by combining the additive metal element M and carbon C. When a graphite crucible is used, if the Si composition ratio in the Si-C solution decreases or C dissolves excessively and the Si / C composition ratio decreases, it is added to facilitate carbon C penetration. The metal element M is easily bonded to carbon C and tends to form metal carbide. Such metal carbide has a high melting point, drifts in the Si-C solution and reaches the vicinity of the seed crystal surface. It becomes a factor which inhibits the single crystallization of. On the other hand, when the SiC crucible is used, carbon C is not excessively dissolved in the Si-C solution, and as a result, the formation of the above-mentioned metal carbide is suppressed and single crystallization of the SiC crystal to be grown is performed. Is easy.

  As described above, in the silicon carbide crystal growth method according to the present invention, a crucible mainly composed of SiC is used as the Si-C solution container, the crucible is heated, and the Si-C solution in the crucible is heated. A temperature distribution is formed in which the temperature increases from the upper side to the lower side, and Si and C from the high temperature region of the crucible surface in contact with the Si-C solution as a source of SiC as a main component of the crucible are converted into Si. Elution in a -C solution to suppress precipitation of SiC polycrystals on the surface of the crucible in contact with the Si-C solution, and contact the SiC seed crystal with the Si-C solution from the top of the crucible; A SiC single crystal is grown on the SiC seed crystal. Usually, the temperature of the Si—C solution during crystal growth is controlled in a temperature range of 1300 ° C. to 2300 ° C.

  In addition, during the SiC single crystal growth process, the induction heating conditions from the high-frequency coil 10 are appropriately controlled to make the above temperature distribution suitable, and the position of the crucible 1 can be moved up and down, The growth rate of the SiC single crystal and the elution rate of Si and C into the SiC solution 4 are appropriately controlled by rotating the crucible 1 and the seed crystal 3, and the Si—C solution accompanying the growth of the SiC single crystal. If only Si and C lost from 4 are supplied from the crucible 1, the composition variation of the Si—C solution 4 can be suppressed.

  FIG. 4 conceptually shows the elution reaction of Si and C from the SiC crucible and the precipitation reaction of SiC on the SiC seed crystal, which are caused by the silicon carbide crystal growth method of the present invention using the SiC crucible. It is a figure for demonstrating. This figure is a quasi-binary phase diagram when the solid-liquid interface between SiC and Si—C solution (solution containing Si, C, and M) is taken as a cross section. The vertical axis represents temperature, and the horizontal axis represents C concentration in the solution. On the horizontal axis, the C concentration increases as it goes to the right, and becomes a SiC crystal at the right end.

In addition, the curves indicated by ST ₁ to ST ₄ in the figure represent the boundaries between the liquid phase (Liquid) and the solid-liquid coexisting phase (Liquid + SiC) at temperatures T _{1 to} T ₄ shown in FIG. Also called a curve. These solubility curves indicate that the Si—C solution can dissolve C in the Si—C solution up to the point indicated by each curve. The upper left of the solubility curve is a liquid phase composed of Si, C, and M, and Si and C are uniformly dissolved. On the other hand, the lower right of the solubility curve is a two-phase coexistence state of a SiC solid phase and a solution phase in which Si, C and M are dissolved.

As shown in FIG. 4, since the solubility of C increases as the solution temperature increases, the solubility curve ST ₁ of T ₁ , which is a relatively high temperature, is on the right side in the figure than the other solubility curves. It becomes. On the other hand, since the dissolution amount of C decreases as the temperature becomes lower, the solubility curve ST ₄ of T ₄ is positioned on the left side of the other solubility curves.

Here, a solution L1 having a C concentration of C ₀ is considered. If there is a temperature distribution (T ₁ > T ₂ > T ₃ > T ₄ ) as shown in FIG. 2 in the solution L1, the solubility state at each temperature in the solution L1 is shown in FIG. It is shown by each point of ad. As can be seen from FIG. 4, the point a is on the left side as seen from the solubility curve ST _{1 at the} temperature T ₁ , so that the solution can further dissolve SiC, and the composition of the L1 solution proceeds in the direction a ′ in the figure. become. That is, SiC in the crucible is dissolved as Si and C in the solution at the point a.

Although b, which is a point of T ₂ lower than T ₁ , is also slight, SiC can be dissolved similarly to the above point a, and the composition of the L1 solution advances in the b ′ direction in the figure. become.

Further, when T ₃ is lower, the point c is located below the solubility curve ST _{3 at} the temperature T _3, so that the solution cannot dissolve SiC, and conversely, SiC is precipitated. It becomes. However, in order for the precipitation phenomenon to actually occur, it is necessary to realize a certain degree of supercooling. Therefore, the solubility of the immediately whether the point c which is located below is sufficiently subcooled state curve ST _3, can not be determined unconditionally. Here, it is assumed that the supercooling at the point c is not sufficient and no SiC precipitation occurs.

At the point d of T ₄ , which is lower than T _3, it is in a sufficiently supercooled state, and SiC is precipitated at a temperature near T ₄ . Since the seed crystal is at such a temperature, a SiC single crystal grows on the SiC seed crystal. By this precipitation reaction, SiC is precipitated from L1, and the composition of the liquid phase L1 moves in the d ′ direction accordingly.

  Although Si and C are continuously eluted from the crucible, since the single crystal is usually grown while rotating the crucible and the seed crystal, the Si-C solution can be made uniform in solution by the stirring effect. It is done. As a result, the state in the solution as shown in FIG. 3 is realized.

  ADVANTAGE OF THE INVENTION According to this invention, in manufacture of the SiC single crystal by a solution method, a high quality SiC single crystal can be manufactured stably over a long time. The reason can be summarized as follows.

  In the conventional solution method, a crucible made of a heat-resistant carbon material such as a graphite crucible is used, and the solution is stored in the crucible and C is eluted from the crucible to replenish C in the solution. However, as the SiC crystal growth proceeds, the composition ratio of the Si component in the solution is inevitably lowered.

  In contrast, in the present invention, SiC is used as a main component and a crucible is used as a container, and Si and C are supplied into the solution using SiC as a crucible component as a source. In this case, even if SiC grows on the seed crystal, Si and C in the solution lost thereby are supplied from the SiC crucible, and as a result, the change in the composition of the solution is suppressed and the SiC single crystal is stabilized. Can grow for a long time.

  It can be said that the crystal growth method of the present invention is a crystal growth method similar to the FZ method or a kind of FZ method. In the FZ method, the melting of the polycrystalline part and the growth of the single crystal part proceed through the Si melting part. Also in the crystal growth method of the present invention, the crucible corresponding to the polycrystal part is melted by heating, and a SiC single crystal grows on the seed crystal through the solution containing Si and C corresponding to the melt part. To do.

  The crystal growth method of the present invention will be specifically described below with reference to examples.

  A SiC single crystal was grown using the apparatus having the structure shown in FIG. SiC crucible 1 filled with Cr (purity 99 wt%), which is a metal having an effect of increasing the solubility of C in a Si-C solution, and Si polycrystal as a raw material, is made of a heat-resistant carbon material. 2 in a crucible 2 and induction heating by a high-frequency coil 10 in a vacuum or Ar atmosphere to dissolve the raw material filled in the SiC crucible 1 over 3 hours.

  The SiC crucible 1 used here has an outer diameter of 70 mm, an inner diameter of 50 mm, an outer wall height of 80 mm, and an inner wall height of 70 mm. The seed crystal 3 was a 4H SiC single crystal having a diameter of 21 mm and a thickness of 0.4 mm. This seed crystal 3 was bonded to the end face of a graphite seed crystal rotating shaft 6 (19 mm diameter) so that the crystal growth surface was a C plane.

  The Si polycrystal and Cr filled in the SiC crucible 1 were prepared such that the bath composition in the state in which they were dissolved was 38 at% for Cr and 62 at% for Si. These raw materials contain Fe as an impurity in an amount of 1 wt% or less.

  When the surface temperature of the solution in the SiC crucible 1 was measured with an optical thermometer from above the apparatus, it was 1800 ° C. Holding in this state for 2 hours, Si and C are eluted from the SiC crucible 1 into a Si—C (—Cr) solution, and the SiC seed crystal 3 is brought into contact with the Si—C solution from the top of the crucible 1. Thus, a SiC single crystal was grown on the SiC seed crystal 3.

  During crystal growth, the pulling speed of the seed crystal rotating shaft 6 was 0.5 mm / h, and the rotating speed was 20 rpm. The SiC crucible 1 was rotated at 20 rpm. After growing the single crystal for 10 hours, Ar gas was introduced into the furnace and cooled to room temperature.

  FIG. 5 is an optical photograph of a cross section obtained by cutting the SiC crucible 1 taken out after crystal growth. On both sides of the bottom of the SiC crucible 1, erosion associated with the elution of Si and C into the Si—C solution is clearly observed.

FIG. 6 shows the result of simulating the temperature distribution in the furnace using the above-mentioned single crystal growth conditions as parameters. In the figure, the outline of the right half of the SiC crucible 1 is shown by a white line. From this simulation, it can be seen that the temperature of the erosion part on both sides of the bottom of the SiC crucible 1 clearly seen in FIG. 5 is the highest. Further, this simulation is performed under the conditions of Example 6 to be described later. According to this result, the temperatures shown in FIG. 2 are T ₁ = 1934 ° C., T ₂ = 1926 ° C., T ₃ = 1918 ° C. and T ₄ = 1918 ° C.

  FIG. 7 is an optical photograph (A) of the upper surface and an optical photograph (B) of the upper surface of the SiC single crystal obtained under the above-described conditions, and the SiC single crystal is indicated by an arrow in FIG. 7 (B). . It can be confirmed that no defects are visually recognized and the surface is smooth.

  FIG. 8 shows an upper surface optical photograph (A) and a side optical photograph of a SiC crystal grown under the same conditions as in Example 1 except that a graphite crucible was used instead of the SiC crucible 1 as a comparative example 1. (B). Many crystal grain boundaries are observed on the crystal plane, and no single crystal is obtained.

  An SiC single crystal was grown under the same conditions as in Example 1 except that the initial composition of the solution was adjusted so that Ti was 20 at% and Si was 80 at%. These raw materials contain Fe as an impurity in an amount of 1 wt% or less.

  FIG. 9A is an optical photograph of the upper surface of the SiC single crystal obtained under the above conditions. It can be confirmed that no defects are visually recognized and the surface is smooth.

  FIG. 9B is an optical photograph of the upper surface of a SiC crystal grown under the same conditions as in Example 2 except that a graphite crucible was used instead of the SiC crucible 1 as Comparative Example 2. Many crystal grain boundaries are observed on the crystal plane, and no single crystal is obtained.

  A SiC single crystal was grown under the same conditions as in Example 1 except that the initial composition of the solution was adjusted so that Al was 20 at% and Si was 80 at%. These raw materials contain Fe as an impurity in an amount of 1 wt% or less.

  FIG. 10A is an optical photograph of the upper surface of the SiC single crystal obtained under the above conditions. It can be confirmed that no defects are visually recognized and the surface is smooth.

  FIG. 10 (B) is an optical photograph of the upper surface of a SiC crystal grown under the same conditions as in Example 3 except that a graphite crucible was used instead of the SiC crucible 1 as a comparative example 3. Many crystal grain boundaries are observed on the crystal plane, and no single crystal is obtained.

  A SiC single crystal was grown under the same conditions as Example 1 except that the initial composition of the solution was such that Pr was 20 at% and Si was 80 at%. These raw materials contain Fe as an impurity in an amount of 1 wt% or less.

  FIG. 11A is an optical photograph of the upper surface of the SiC single crystal obtained under the above-described conditions. It can be confirmed that no defects are visually recognized and the surface is smooth.

  FIG. 11B is an optical photograph of the upper surface of a SiC crystal grown under the same conditions as in Example 4 except that a graphite crucible was used instead of the SiC crucible 1 as Comparative Example 4. Many crystal grain boundaries are observed on the crystal plane, and no single crystal is obtained.

  An SiC single crystal was grown under the same conditions as in Example 1 except that the initial composition of the solution was such that Pr was 20 at%, Cr was 30 at%, and Si was 50 at%. These raw materials contain Fe as an impurity in an amount of 1 wt% or less.

  FIG. 12A is an optical photograph of the upper surface of the SiC single crystal obtained under the above conditions. It can be confirmed that no defects are visually recognized and the surface is smooth.

  FIG. 12B is an optical photograph of the upper surface of a SiC crystal grown under the same conditions as in Example 5 except that a graphite crucible was used instead of SiC crucible 1 as Comparative Example 5. Many crystal grain boundaries are observed on the crystal plane, and no single crystal is obtained.

  A SiC single crystal was grown under the same conditions as in Example 1 except that the initial composition of the solution was such that Pr was 20 at%, Fe was 30 at%, and Si was 50 at%. These raw materials contain 1 wt% or less of Cr as an impurity.

  FIG. 13 is an optical photograph of the upper surface of the SiC single crystal obtained under the above-described conditions. It can be confirmed that no defects are visually recognized and the surface is smooth.

  In the above embodiment, Cr, Ti, Al, and Pr are selected as the metal elements to be added to the Si—C solution, but various metal elements can be selected in addition to these.

  For example, it may be at least one metal element selected from the group of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Lu.

  For example, it may be at least one metal element selected from the group of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu.

  Furthermore, for example, it may be at least one metal element selected from the group of Al, Ga, Ge, Sn, Pb, and Zn.

  Note that a combination of the above metal elements may be used. For example, at least one metal element M1 selected from the group of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Lu, and Ti , V, Cr, Mn, Fe, Co, Ni, and a combination of at least one metal element M2 selected from the group of Cu.

  Usually, the addition of such metal elements makes the total content in the Si-C solution 1 at% to 80 at%.

  As described above, according to the crystal growth method of silicon carbide according to the present invention, the composition variation of the S—C solution is small compared to the conventional method using a graphite crucible, and polycrystals precipitated on the inner wall of the crucible are also generated. It is suppressed. As a result, high-quality single crystal silicon carbide with low defects can be obtained.

  The silicon carbide crystal growth method according to the present invention can be organized as the following invention.

  The first aspect is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as an Si-C solution container, the crucible is heated, and the inside of the crucible is heated. A temperature distribution in which the temperature of the Si-C solution increases from the upper side to the lower side is formed, and Si from the high temperature region on the surface of the crucible in contact with the Si-C solution as a source of SiC as a main component of the crucible And SiC are eluted in the Si-C solution, and an SiC seed crystal is brought into contact with the Si-C solution from the upper part of the crucible to grow a SiC single crystal on the SiC seed crystal. A method for growing silicon carbide crystals.

  Preferably, the heating is performed such that the isothermal line in the crucible has a temperature distribution that protrudes downward.

  Preferably, a metal M having an effect of increasing the solubility of C in the Si—C solution is added in advance to the Si—C solution.

  The second aspect is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as an Si-C solution containing portion, and the crucible is heated to obtain the Si-C. Si and C derived from SiC, which is the main component of the crucible, are eluted from the high temperature region on the crucible surface in contact with the solution into the Si-C solution, and SiC on the crucible surface in contact with the Si-C solution is obtained. A silicon carbide crystal characterized by suppressing precipitation of polycrystals, bringing a SiC seed crystal into contact with the Si-C solution from above the crucible, and growing a SiC single crystal on the SiC seed crystal. Growth method.

  Preferably, the heating is performed so as to form a temperature distribution in which the temperature of the Si—C solution in the crucible containing SiC as a main component increases from the upper side to the lower side.

  Preferably, a metal M having an effect of increasing the solubility of C in the Si—C solution is added in advance to the Si—C solution.

  A third aspect is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as an Si-C solution container, and the first metal is used in the Si-C solution. An element M1 (M1 is at least one metal element selected from the group of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Lu) and a second metal element M2 (M2 is , Ti, V, Cr, Mn, Fe, Co, Ni, Cu), and the crucible surface in contact with the Si-C solution by heating the crucible Si and C originating from SiC, which is the main component of the crucible, are eluted from the high temperature region of the crucible into the Si-C solution to suppress the precipitation of SiC polycrystals on the surface of the crucible in contact with the Si-C solution. And from the top of the crucible into the Si-C solution Contacting the iC seed crystal, growing a SiC single crystal on the SiC seed crystal, the crystal growth method of silicon carbide, characterized in that.

  The fourth embodiment is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as a Si-C solution container, and the metal element M ( M contains at least one metal element selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, and Lu), and heats the crucible to -Si and C from the high temperature region on the surface of the crucible in contact with the -C solution are eluted into the Si-C solution from the main component of the crucible, and the surface of the crucible in contact with the Si-C solution The silicon carbide is characterized in that the precipitation of SiC polycrystal is suppressed, the SiC seed crystal is brought into contact with the Si-C solution from the upper part of the crucible, and the SiC single crystal is grown on the SiC seed crystal. Crystal growth method.

  A fifth aspect is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as a Si-C solution container, and the metal element M ( M is at least one metal element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu), and the crucible is heated to come into contact with the Si-C solution. Si and C derived from SiC, which is the main component of the crucible, are eluted from the high temperature region of the crucible surface into the Si-C solution, and SiC polycrystal is precipitated on the crucible surface in contact with the Si-C solution. And a SiC single crystal is grown on the SiC seed crystal by bringing the SiC seed crystal into contact with the Si—C solution from above the crucible.

  A sixth aspect is a silicon carbide crystal growth method by a solution method, wherein a crucible containing SiC as a main component is used as a Si-C solution container, and the metal element M ( M is at least one metal element selected from the group consisting of Al, Ga, Ge, Sn, Pb, and Zn), and heats the crucible so that the high temperature of the crucible surface in contact with the Si-C solution Si and C derived from SiC as a main component of the crucible from the region are eluted in the Si-C solution, and the precipitation of SiC polycrystals on the surface of the crucible in contact with the Si-C solution is suppressed, A silicon carbide crystal growth method, comprising bringing a SiC seed crystal into contact with the Si-C solution from above the crucible and growing a SiC single crystal on the SiC seed crystal.

  In the above third to sixth aspects, preferably, the heating forms a temperature distribution in which the temperature of the Si—C solution in the crucible containing SiC as a main component increases from the upper side to the lower side. Executed.

  In the present invention, preferably, the total content of the first metal element M1 and the second metal element M2 in the Si-C solution, or the total content of the metal element M in the Si-C solution. The amount is 1 at% to 80 at%.

  Moreover, in this invention, Preferably, the said Si-C solution is controlled to the temperature range of 1300 degreeC-2300 degreeC by the said heating.

  Furthermore, in the present invention, preferably, the heating is performed in a state where the crucible mainly composed of SiC is housed in a second crucible made of a heat-resistant carbon material.

  According to the silicon carbide crystal growth method according to the present invention, the composition variation of the S—C solution is less than that in the conventional method using a graphite crucible, and the polycrystalline or additive metal element M and carbon C precipitated on the inner wall of the crucible. Generation of metal carbides formed by bonding is also suppressed. As a result, high-quality single crystal silicon carbide with low defects can be obtained.

DESCRIPTION OF SYMBOLS 1 Crucible which has SiC as a main component 2 2nd crucible which consists of heat resistant carbon materials 3 Seed crystal 4 Si-C solution 5 Crucible rotating shaft 6 Seed crystal rotating shaft 7 Susceptor 8 Heat insulating material 9 Top lid 10 High frequency coil

Claims (5)

A crystal growth method of silicon carbide by a solution method,
Using a crucible containing SiC as a main component as a container for the Si-C solution,
The Si-C solution contains a metal element M (M is at least one metal element selected from the group consisting of Ti, V, Cr, Mn, Fe, Co, Ni, and Cu),
The crucible is heated to elute Si and C from the high temperature region of the crucible surface in contact with the Si-C solution into the Si-C solution, using Si as the main component of the crucible as a source. -Suppression of SiC polycrystal precipitation on the crucible surface in contact with the -C solution,
A silicon carbide crystal growth method, comprising bringing a SiC seed crystal into contact with the Si-C solution from above the crucible and growing a SiC single crystal on the SiC seed crystal.   2. The silicon carbide according to claim 1, wherein the heating is performed so as to form a temperature distribution in which a temperature of the Si—C solution in the crucible containing SiC as a main component increases from the upper side to the lower side. Crystal growth method.   The silicon carbide crystal growth method according to claim 1 or 2, wherein a total content of the metal element M in the Si-C solution is set to 1 at% to 80 at%.   The silicon carbide crystal growth method according to claim 1, wherein the Si—C solution is controlled to a temperature range of 1300 ° C. to 2300 ° C. by the heating.   The silicon carbide crystal growth according to any one of claims 1 to 4, wherein the heating is performed in a state where the crucible mainly composed of SiC is accommodated in a second crucible made of a heat-resistant carbon material. Method.