JP2015094011A - Thin film deposition system - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin film deposition system which can improve a film deposition rate without deteriorating a film thickness distribution.SOLUTION: A thin film deposition system includes a chamber to form a vacuum environment, a substrate holding part to hold a substrate in the chamber, an electrode unit which is disposed facing the substrate holding part and generates plasma, and multiple raw material gas supply parts disposed between the substrate holding part and the electrode unit, and deposits a thin film on the substrate by exposing raw material gas supplied from the raw material gas supply part to a plasma environment. The thin film deposition system is configured such that the electrode unit has an inductive coupling type electrode part and each of the raw material gas supply parts is disposed in a position sandwiching a high-density plasma region in which a plasma region formed by the inductive coupling type electrode part becomes relatively highly dense.

Description

  The present invention relates to a thin film forming apparatus using a vapor deposition method, and more particularly to a thin film forming apparatus capable of improving a film forming rate of a thin film formed on a substrate.

  Since electronic devices such as organic EL and solar cells are vulnerable to water and acid, it has been proposed to improve durability by covering the surface with a sealing film. Such a sealing film is formed by a thin film forming apparatus using a vapor deposition method, a so-called plasma CVD apparatus. As shown in FIG. 8, this thin film forming apparatus supplies a substrate gas in a chamber 101, an electrode unit 105 having an inductively coupled electrode 104 for generating plasma, and a source gas. The raw material gas supply unit 106 is provided, and the raw material gas supply unit 106 is disposed between the substrate holding unit 103 and the electrode unit 105 disposed to face each other (for example, Patent Document 1 below). reference). Then, when the source gas is supplied from the jet port of the source gas supply unit 106, the source gas is exposed to the plasma environment formed by the electrode unit 105, thereby forming film forming particles. The film-forming particles are deposited on the substrate 102 to form a uniform thin film 108 (for example, a sealing film).

JP 2002-203841 A

  However, the thin film forming apparatus has a problem that the film forming rate (thin film forming speed per unit time) cannot be improved. That is, in the inductively coupled electrode portion 104, a plasma region (referred to as a high-density plasma region 107) having a higher density than other regions is formed between the electrode portions 104 almost uniformly (see FIG. 9). By supplying the source gas to the high-density plasma region 107, the source gas is efficiently plasma-processed, and the thin film 108 can be formed on the substrate 102.

  In recent years, it has been demanded to reduce the film formation cost of the thin film 108. Therefore, it is conceivable to improve the production efficiency by reducing the film formation cost of the thin film 108 to increase the production efficiency. However, when the supply amount of the source gas supplied from the source gas supply unit 106 is increased in order to improve the film forming rate, as shown in FIG. As a result, a thin thin film 108 is formed in a region far from the hole, and in the region far from the source gas supply unit 106, there is a problem that the thin film 108 is difficult to be formed although it is the same high-density plasma region 107. That is, even if an attempt is made to increase the amount of source gas supplied from the source gas supply unit 106 to improve the film formation rate, the high-density plasma region 107 cannot be effectively used over the entire region, and as a result, the film This means that the thickness distribution is disturbed, and the film forming rate cannot be easily improved.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a thin film forming apparatus capable of improving the film forming rate without disturbing the film thickness distribution.

  In order to solve the above-described problems, a thin film forming apparatus of the present invention includes a chamber for forming a vacuum environment, a substrate holding unit for holding a substrate in the chamber, and a plasma disposed to face the substrate holding unit. A plurality of source gas supply units provided between the electrode unit and the substrate holding unit and the electrode unit, and the source gas supplied from the source gas supply unit is exposed to a plasma environment to form a thin film on the substrate The electrode unit has an inductively coupled electrode section, and the source gas supply section has a relative plasma region formed by the inductively coupled electrode section. It is characterized by being arranged at positions sandwiching a high-density plasma region where the density is high.

  According to the thin film forming apparatus, since the plurality of source gas supply units are arranged at positions sandwiching the high-density plasma region formed by the inductively coupled electrode unit, the source material ejected from each source gas supply unit By exposing the gas to the high-density plasma region, a thin film having a substantially constant film thickness can be formed over the entire substrate. That is, when the source gas supply unit is a single unit, the thickness of the thin film is reduced as the source gas supply unit is separated from the source gas supply unit, but the source gas supply unit is disposed so as to sandwich the high-density plasma region. As a result, the source gas can be supplied also to the region that has been conventionally formed thin, so that the amount of film formation in the region that has been conventionally formed thin can be increased. That is, the thin film is formed symmetrically across the high-density plasma region, and a thin film having a substantially uniform thickness can be formed in the film forming region on the substrate. Therefore, since a thin film having a substantially uniform thickness is formed on the substrate, the film forming rate can be easily improved without increasing the film thickness distribution by increasing the supply amount of the source gas.

  In addition, the source gas supply unit is arranged so that the ejection holes through which the source gas is injected are positioned closer to the high density plasma region than the inductively coupled electrode unit forming the high density plasma region. May be.

  According to this configuration, since the source gas supply unit is located on the high density plasma region side, the source gas is easily exposed to the high density plasma region, and the film processing rate is improved by increasing the plasma processing efficiency of the source gas. be able to.

  Furthermore, it is preferable that the source gas supply unit is configured so that the ejection holes through which the source gas is injected are located in the high density plasma region.

  According to this configuration, since the source gas supplied from the ejection holes is reliably subjected to plasma processing, it is possible to further increase the plasma processing efficiency of the source gas and improve the film formation rate.

  In addition, a mask is provided between the substrate holding unit and the source gas supply unit to limit a film formation region on the substrate on the substrate holding unit by an opening, and the source gas supply unit You may make it the structure arrange | positioned so that the ejection hole in which gas is injected may be located in the outer edge of the opening part of the said mask, or the opening part of a mask.

  According to this configuration, the ejection hole of the source gas supply unit is arranged at the outer edge of the opening of the mask, or in the opening of the mask, that is, the ejection hole of the source gas supply unit is arranged outside the opening of the mask. It can suppress that the film forming particle produced | generated in the high-density plasma area | region adheres to a mask. Therefore, the produced film-forming particles are easily deposited on the substrate, and the replacement frequency of the mask can be suppressed. Therefore, the film-forming efficiency can be improved, and thus the production efficiency can be improved.

  In addition, it is preferable that the ejection hole through which the source gas of the source gas supply unit is injected is set such that the injection direction is directed toward the film forming region of the substrate held by the substrate holding unit.

  According to this configuration, since the injected source gas goes to the film forming region, the film forming particles generated in the high-density plasma region can easily move to the film forming region, and the thin film formed on the substrate is formed. Efficiency can be increased.

  In addition, it is preferable that the inductively coupled electrode unit, the source gas supply unit, and the substrate holding unit of the electrode unit are arranged in the chamber so that they are vertically upward in this order.

  According to this configuration, the foreign matter floating in the chamber is likely to fall under the influence of gravity, so that the quality of the thin film formed on the substrate can be improved.

  According to the thin film forming apparatus of the present invention, the film forming rate can be improved without disturbing the film thickness distribution.

It is the schematic which shows the thin film formation apparatus in one Embodiment of this invention. It is the schematic which looked at the electrode unit of the said thin film forming apparatus from upper direction. It is a figure which shows the output state of the plasma of an electrode part vicinity. It is a figure which shows the formation state of the thin film formed on a board | substrate. It is a figure which shows a source gas supply part (porous nozzle). It is sectional drawing of the source gas supply part in FIG. 5, (a) is sectional drawing in a jet nozzle position, (b) is sectional drawing in positions other than a jet nozzle. It is a figure which shows the relationship between the ejection hole of a source gas supply part, a high-density plasma area | region, and a board | substrate. It is a figure which shows the conventional thin film forming apparatus. It is a figure which shows the plasma area | region formed with an inductively coupled electrode. It is a figure which shows the formation state of the thin film formed on the board | substrate in a prior art.

  FIG. 1 is a schematic front view showing a thin film forming apparatus according to an embodiment of the present invention, and FIG. 2 is a schematic view of an electrode unit as viewed from above.

  As shown in FIGS. 1 and 2, the thin film forming apparatus 1 includes a chamber 2, a substrate holder 4 provided in the chamber 2, and an electrode unit 3, and plasma is generated by the electrode unit 3. When the source gas is supplied into the chamber 2 in this state, the source gas is excited and film-forming particles are generated. Then, by depositing on the substrate W, a thin film C such as a sealing film that prevents intrusion of moisture, acid and the like is formed.

  The chamber 2 is a sealed container for forming a thin film C on the substrate W by forming a vacuum environment and depositing film-forming particles generated therein. In the chamber 2, a substrate holding unit 4 that holds the substrate W and an electrode unit 3 that generates plasma are disposed at positions facing each other, and a source gas is interposed between the substrate holding unit 4 and the electrode unit 3. A supply unit 5 is provided. That is, the electrode unit 3, the source gas supply unit 5, and the substrate holding unit 4 are arranged so that they are directed upward in this order. When the source gas is supplied from the source gas supply unit 5, the source gas is exposed to the plasma environment formed by the electrode unit 3, so that the thin film C is formed on the substrate W held by the substrate holding unit 4. It is formed.

  The substrate holding unit 4 is for holding the substrate W. In the present embodiment, the substrate 41 is held by being supported on the electrode unit 3 by the hand 41 that supports the substrate W. Specifically, the substrate W has a rectangular flat plate shape, and has a film forming region in which the thin film C is formed in the central portion and thin film non-forming regions at both ends thereof. The hand 41 is held by supporting the thin film non-formation region of the substrate W. That is, the substrate W is held in a posture in which the surface on which the thin film C is formed faces the electrode unit 3 side (downward) when being held by the substrate holding unit 4.

  Further, a mask 8 that restricts a film forming region of the substrate W is provided between the substrate holding unit 4 and the source gas supply unit 5. The mask 8 is a flat plate-like member, and has an opening 81 at the center. The mask 8 is disposed at a certain distance from the substrate W held by the substrate holding unit 4, and a thin film can be formed in the film forming region of the substrate W by this mask 8. That is, the opening 81 of the mask 8 is formed in substantially the same shape as the film formation region of the substrate W, and in the state where the substrate W is held by the substrate holding unit 4, the electrode unit 3, the source gas supply unit 5, The film formation region of the substrate W and the opening region of the opening 81 are arranged so as to coincide with each other when viewed in the arrangement direction of the substrate holder 4. Accordingly, only the film-forming particles generated by the plasma treatment of the source gas are deposited on the substrate W after passing through the opening 81 of the mask 8, so that a thin film is formed on the substrate W in the film-forming region. The

  The electrode unit 3 generates plasma. The electrode unit 3 of this embodiment includes a U-shaped inductively coupled electrode portion 31 and a high-frequency power source 9.

  As shown in FIG. 2, the electrode part 31 has an electrode body 31a formed of a conductor such as Cu and a dielectric part 31b formed of a non-dielectric material such as glass. It is formed so as to be covered with the dielectric portion 31b and is formed in a U shape as a whole. As shown in FIG. 2, the electrode portion 31 penetrates the wall surface of the chamber 2 from the outside and enters the inside of the chamber 2, and extends so as to penetrate the wall surface of the chamber 2 facing the wall surface of the penetrated chamber 2. ing. Then, the direction is changed by 180 ° outside the chamber 2, and further penetrates the chamber wall to enter the chamber 2, and again penetrates the chamber wall. That is, the electrode portion 31 is provided in a state where the linearly formed portion is located at the same height in the chamber 2. In other words, the electrode portion 31 is provided so that the linearly extending portion (the linear portion 34) is positioned in the chamber 2 in a substantially parallel state, and the other portion is positioned outside the chamber 2. Yes.

  Further, the end of the electrode unit 31 is connected to the high frequency power source 9, and plasma is generated in the parallel linear portions 34 of the electrode unit 31 located in the chamber 2 when the high frequency power source 9 is switched on. It is supposed to be. Here, FIG. 3 is a diagram showing a plasma output state in the vicinity of the electrode portion 31. As shown in FIG. 3, the plasma output 35 (shown by a broken line) increases between the electrode portions 31 of the linear portion 34, and the output 35 decreases from between the electrode portions 31 toward the outside of the electrode portion 31. It is formed. That is, a high output 35 (high density) plasma is formed in a certain region between the electrode portions 31, and the output 35 is reduced in the vicinity of the electrode portions 31. In the present embodiment, a constant plasma region formed between the electrode portions 31 is referred to as a high density plasma region 36. In the high-density plasma region 36, since the plasma output 35 is high, the raw material gas is plasma-processed with high efficiency. That is, when a discharge gas is supplied from the discharge gas supply unit 21 (see FIG. 1) provided on the wall surface of the chamber 2 in a state where plasma is generated in the electrode unit 31, the discharge gas is exposed to the plasma. Is decomposed to form a reaction gas. And this reaction gas reacts with source gas, and film-forming particle | grains are formed. Note that a grounded metal mesh member is provided between the electrode unit 3 and the source gas supply unit 5 so that unnecessary particles formed with the reaction gas are captured by the mesh member. It has become.

  The film-forming particles are formed in a vacuum environment in the chamber 2. That is, a discharge port 22 (see FIG. 1) for exhausting the inside of the chamber 2 is provided on the wall surface of the ceiling portion of the chamber 2. The discharge port 22 is connected to a vacuum pump (not shown) by piping, and the inside of the chamber 2 can be adjusted to a predetermined degree of vacuum by operating the vacuum pump. That is, when forming the film-forming particles (at the time of film formation), the inside of the chamber 2 is adjusted to a predetermined vacuum environment by operating a vacuum pump.

  The source gas supply unit 5 supplies source gas for forming the thin film C in the chamber 2. Here, FIG. 5 is a view showing the source gas supply unit 5, FIG. 6 is a cross-sectional view thereof, (a) is a cross-sectional view at the jet outlet position, and (b) is a cross-section at a position other than the jet outlet. FIG. The source gas supply unit 5 has an ejection hole 61, and the source gas is supplied from the ejection hole 61.

  As shown in FIGS. 1 and 3, two source gas supply sections 5 of the present embodiment are provided, and each is provided at a position sandwiching the high-density plasma region 36. That is, they are arranged in the vicinity of the outer edge of the high-density plasma region 36 and are arranged at positions that are symmetric with respect to the high-density plasma region 36. Specifically, the ejection holes 61 of the source gas supply unit 5 are arranged so as to be located closer to the high-density plasma region 36 than the electrode unit 31, and are separated from each other in one direction with respect to the film forming region of the substrate W. It is arranged at the position. That is, when only one source gas supply unit 5 is provided, the thin film C1 on the substrate W is formed thick in the vicinity of the source gas supply unit 5 and is separated from the source gas supply unit 5 as shown by the solid line in FIG. However, since the output 35 of the high-density plasma region 36 is substantially constant by disposing the source gas supply unit 5 at a position that is symmetric with respect to the high-density plasma region 36, the source gas of each other is formed. By complementing the film forming amount of the supply unit 5, a thin film C (broken line) having a substantially uniform thickness can be formed in the film forming region of the substrate W.

  Note that the position that is symmetric with respect to the high-density plasma region 36 is, in addition to the position that is completely symmetric, in consideration of the assembly accuracy of the apparatus, the deviation from the center of film formation, and the like. Complementing the film forming amount of the gas supply unit 5 includes a symmetrical position where the thin film is formed flat enough to cause no product-like problems.

  These source gas supply parts 5 have the same structure, and are a porous nozzle 5a having a plurality of ejection holes 61 (see FIG. 6), as shown in FIG. The source gas supply unit 5 is connected to a source gas tank (not shown) by piping, and supplies source gas into the chamber 2 through the porous nozzle 5a.

  The porous nozzle 5a has a connection pipe 51 attached to the wall surface of the chamber 2 and an ejection part 52 from which the source gas is ejected. The ejection part 52 has a substantially cylindrical pipe main body 52a extending in one direction, and is connected to the connection pipe 51 at the center of the pipe main body 52a. That is, the porous nozzle 5a is formed of a substantially T-shaped pipe, and the direction in which the pipe main body 52a of the ejection part 52 extends is the width direction of the substrate W in a state where the ejection part 52 is close to the surface of the substrate W. They are arranged so as to be almost parallel. And the longitudinal direction dimension of the piping main body 52a is formed in a dimension larger than the width direction dimension of the board | substrate W, and the raw material gas ejected is uniformly supplied to the width direction dimension of the board | substrate W. Yes.

  Moreover, the ejection part 52 has the ejection hole 61 from which source gas ejects, and the film-forming adhesion cover 7. In the present embodiment, a flat partition plate 6 is provided in the pipe main body 52 a, and an ejection hole 61 is provided in the partition plate 6. Specifically, the partition plate 6 is provided in the pipe main body 52 a in a posture orthogonal to the connection pipe 51 at a predetermined interval from the connection portion with the connection pipe 51. That is, a space (storage space S) extending in the longitudinal direction is formed in the pipe body 52 a between the partition plate 6 and the connection pipe 51. A plurality of ejection holes 61 penetrating in the thickness direction of the partition plate 6 are uniformly arranged in the partition plate 6 in a state of being arranged at equal intervals in the longitudinal direction.

  The ejection hole 61 is formed in a circular shape in the present embodiment, and the opening area of the ejection hole 61 is formed to be much smaller than the opening area of the connection pipe 51. And the penetration direction of the ejection hole 61 is set to a direction toward the surface of the substrate W. Thereby, the source gas supplied through the connection pipe 51 is uniformly supplied to the entire width direction of the substrate W. That is, the raw material gas supplied from the raw material gas tank through the connection pipe 51 is blocked by the partition plate 6 and spreads throughout the storage space S and temporarily stored. Further, when the source gas is further supplied, the pressure in the storage space S is increased, so that the source gas is ejected from all the ejection holes 61. Therefore, the source gas is uniformly supplied over the width direction of the substrate W by ejecting the source gas from the plurality of ejection holes 61 formed in the longitudinal direction of the partition plate 6. Then, the ejected raw material gas is exposed to a plasma environment to form film-forming particles, and the film-forming particles adhere to and deposit on the substrate W to form a thin film C.

  In this embodiment, the HMDS gas (hexamethyldisilazane gas) is supplied from the ejection hole 61, and the argon gas and the hydrogen gas are supplied from the discharge gas supply unit 21, whereby the Si compound (the product that forms the first thin film C) is supplied. (Film particles) are generated, and HMDS gas is supplied from the ejection holes 61 and oxygen gas is supplied from the discharge gas supply unit 21, whereby SiO2 (film-forming particles forming the second thin film C) is generated. By repeating this alternately, a thin film C (sealing film) including a plurality of first thin films C and second thin films C can be formed on the substrate W (on the electronic device).

  The film deposition cover 7 is for suppressing the ejection hole 61 from being directly exposed to the plasma environment. The film deposition cover 7 is provided so as to protrude from the position of the ejection hole 61 to the ejection side. In the present embodiment, the film-forming adhesion cover 7 is formed by a part of the pipe main body 52a extending from the position of the partition plate 6 to the ejection side (the arrow direction in FIG. 6). Specifically, it is formed so as to cover the entire partition plate 6 so as to be separated from the partition plate 6 to the ejection side by a predetermined distance. That is, it is formed along the arrangement direction of the plurality of ejection holes 61 arranged in one direction, and is provided so as to cover these ejection holes 61 so as to be separated from the position of the ejection holes 61 by a predetermined distance toward the ejection side. Yes. Thereby, it is possible to avoid that the film-forming adhesion cover 7 is interposed between the ejection hole 61 and the electrode part 31 and the ejection hole 61 is directly exposed to the plasma environment formed by the electrode part 31. That is, since the film-forming adhesion cover 7 exists between the ejection hole 61 and the electrode portion 31, the ejection hole 61 enters the shadow of the film-forming adhesion cover 7, and the discharge gas is exposed to plasma. The formed reactive gas is difficult to reach the ejection hole 61. Therefore, it is possible to suppress the phenomenon that the film forming particles formed by the reaction between the reaction gas and the raw material gas in the vicinity of the ejection hole 61 adhere to the ejection hole 61. That is, since the amount of film-forming particles adhering to the ejection holes 61 can be suppressed, the problem that the ejection holes 61 are blocked by the film of the film-forming particles formed in the ejection holes 61 can be suppressed. The ejection side is the direction in which the source gas is ejected from the ejection hole 61, that is, the film deposition cover 7 side.

  An opening 71 is formed in the film deposition cover 7. In the present embodiment, the opening 71 is a through hole having a circular shape, and is formed at a position corresponding to each ejection hole 61 and extending from the ejection hole 61 in the ejection direction. Therefore, the source gas ejected from the ejection hole 61 is ejected into the chamber 2 through the opening 71. The opening 71 is formed to be sufficiently larger than the ejection hole 61, and the opening area of the opening 71 is formed to be larger than the opening area of the ejection hole 61. Specifically, in such a thin film forming apparatus, the vacuum state of the chamber 2 is opened and maintenance work is performed to remove the deposited film P of film forming particles (see FIG. 6). The opening 71 is formed in such a size that it is not blocked by the film P of the film-forming particles until the next maintenance work is performed. That is, the reaction gas formed when the discharge gas is exposed to the plasma reacts with the raw material gas ejected through the opening 71 to form film forming particles. The film-forming particles adhere to the opening 71, and a thin film C formed by the film-forming particles grows in the opening 71. However, since the opening 71 is formed in a sufficient size, the opening 71 is not blocked by the thin film C. Therefore, the source gas necessary for forming the thin film C on the substrate W can be ejected from the ejection holes 61 and supplied into the chamber 2.

  FIG. 7 is a diagram showing the relationship among the ejection holes 61, the high-density plasma region 36, and the substrate W of the source gas supply unit 5. As described above, these source gas supply units 5 are arranged at positions symmetrical with respect to the high-density plasma region 36, and FIG. 7 shows the source gas supply unit 5 only on one side. The source gas supply unit 5 is symmetric with respect to the high-density plasma region 36, and in the example shown in FIG. 7, the ejection holes 61 are arranged so as to be located in the high-density plasma region 36. . That is, the source gas supply unit 5 is arranged so that all the ejection holes 61 are completely included in the high-density plasma region 36. Thereby, since the source gas ejected from the ejection hole 61 through the opening 71 is exposed to the high-density plasma environment immediately after exiting the ejection hole 61 and the opening 71, the film-forming particles can be efficiently generated. It becomes possible. In addition, since source gas is ejected from both the ejection holes 61, the amount of film-forming particles produced | generated compared with the case where the source gas supply part 5 is single-piece | unit increases, and film-forming particle | grains enter the source gas supply part 5. Although the possibility of adhesion increases, the film-forming adhesion cover 7 provided in the ejection part 52 can supply the source gas stably without blocking the ejection holes 61 and produce the film-forming particles.

  Further, the ejection direction of the ejection hole 61 of the source gas supply unit 5 is set in a direction toward the surface of the substrate W. Specifically, the ejection direction of the ejection hole 61 is set in a direction toward the film formation region of the substrate W, and the ejection hole 61 has a direction in which the penetrating direction proceeds toward the film formation region through the opening 81 of the mask 8. Is formed. That is, the source gas supply unit 5 is arranged so that the ejection holes 61 are located in the opening 81 of the mask 8 when viewed in the arrangement direction of the electrode unit 3, the source gas supply unit 5, and the substrate holding unit 4. Furthermore, since the penetration direction is set in the direction toward the film forming region of the substrate W, the movement of the source gas can be moved to the film forming region without being hindered by the mask 8. Then, the source gas is exposed to the plasma environment while moving toward the film forming region, so that the film forming particles generated from the source gas are also easily moved toward the film forming region and are formed on the substrate W. The film forming rate of the thin film can be increased. Further, in the present embodiment, the position of the ejection hole 61 is arranged so as to be located in the opening 81 of the mask 8 when viewed in the arrangement direction of the electrode unit 3, the source gas supply unit 5, and the substrate holding unit 4. However, the film formation rate can be increased and the thin film C can be efficiently formed even when positioned at the outer edge of the opening 81 of the mask 8 when viewed in the arrangement direction of the source gas supply unit 5 and the substrate holding unit 4. Can do. When the ejection holes 61 are located outside the opening 81, the film-forming particles are likely to adhere to the outer edge portion of the mask 8, and the frequency of replacement of the mask 8 is increased.

  As described above, according to the thin film forming apparatus in the above embodiment, since the plurality of source gas supply units 5 are arranged at positions sandwiching the high-density plasma region 36 formed by the inductively coupled electrode unit 31, respectively. The source gas ejected from the source gas supply unit 5 is exposed to the high-density plasma region 36, whereby a thin film C having a substantially constant film thickness is formed over the entire substrate W. That is, when the source gas supply unit 5 is a single unit, the thickness of the thin film C is reduced as the source gas supply unit 5 is separated from the source gas supply unit 5, but the source gas supply unit 5 is sandwiched between the high-density plasma regions 36. Thus, the source gas can be supplied also to the region that has been conventionally formed thin, and the amount of film formation in the region that has been conventionally formed thin can be increased. That is, the thin film C is formed symmetrically with the high-density plasma region 36 interposed therebetween, and the thin film C having a substantially uniform thickness can be formed in the film forming region on the substrate W. Therefore, since the thin film C having a substantially uniform thickness is formed on the substrate W, increasing the supply amount of the source gas can easily improve the film formation rate without disturbing the film thickness distribution.

  Moreover, although the said embodiment demonstrated the example in which the several raw material gas supply parts 5 were provided, if it arrange | positions so that the high-density plasma area | region 36 may be pinched | interposed, two or more raw material gas supply parts 5 may be arrange | positioned. Good. That is, by arranging symmetrically with respect to the high-density plasma region 36 so as to sandwich the high-density plasma region 36, the amount of film formation of the source gas supply parts 5 can be complemented, and the film formation rate can be increased. The thin film C having a substantially uniform thickness can be formed on the substrate W while improving.

  In the above embodiment, the example in which the mask 8 is provided has been described. However, when the film formation region is not set on the substrate W and the film is formed on the entire surface of the substrate W, the mask 8 is omitted. Also good.

  Moreover, although the electrode part 31, the raw material gas supply part 5, and the board | substrate W of the electrode unit demonstrated the example arrange | positioned in this order vertically upwards in the said embodiment, even if these are set downward in the perpendicular direction, The film forming rate can be improved. However, when these are arranged vertically upward, foreign matter is less likely to adhere to the substrate W due to the influence of gravity, so that the film quality of the thin film C can be improved.

  Moreover, although the said embodiment demonstrated the case where the board | substrate W was hold | maintained at the board | substrate holding | maintenance part 4, and provided the transfer function in the board | substrate holding | maintenance part 4, the board | substrate W drive | works in the direction which straddles the electrode part 31. You may comprise as follows. That is, by causing the substrate W to travel so as to pass through the high-density plasma region 36, the source gas supplied by the plurality of source gas supply units 5 arranged so as to sandwich the high-density plasma region 36 is plasma with high efficiency. Since the substrate W is exposed to the atmosphere, the thin film C having a substantially uniform thickness can be formed on the substrate W while improving the film formation rate.

DESCRIPTION OF SYMBOLS 1 Thin film formation apparatus 2 Chamber 3 Electrode unit 4 Substrate holding | maintenance part 5 Raw material gas supply part 7 Film deposition adhesion cover 8 Mask 31 Electrode part 36 High-density plasma area 61 Ejection hole W Substrate C Thin film

Claims (6)

A chamber for forming a vacuum environment; a substrate holder for holding a substrate in the chamber; an electrode unit disposed opposite to the substrate holder to generate plasma; and between the substrate holder and the electrode unit A plurality of source gas supply units provided in a thin film forming apparatus for forming a thin film on a substrate by exposing the source gas supplied from the source gas supply unit to a plasma environment,
The electrode unit has an inductively coupled electrode part,
2. The thin film forming apparatus according to claim 1, wherein the source gas supply unit is disposed at a position sandwiching a high-density plasma region where a plasma region formed by the inductively coupled electrode unit is relatively dense.   The source gas supply unit is arranged such that an ejection hole through which source gas is injected is positioned closer to the high density plasma region than the inductively coupled electrode unit that forms the high density plasma region. The thin film forming apparatus according to claim 1.   3. The thin film forming apparatus according to claim 1, wherein the source gas supply unit is disposed such that an ejection hole through which source gas is injected is located in a high-density plasma region.   A mask is provided between the substrate holding part and the source gas supply part to restrict a film formation region on the substrate on the substrate holding part by an opening, and the source gas supply part is provided with a source gas. The thin film forming apparatus according to claim 1, wherein the ejection holes to be ejected are arranged so as to be located in an outer edge of the opening of the mask or in the opening of the mask.   The ejection hole through which the source gas of the source gas supply unit is injected is set so that the injection direction is directed toward the film forming region of the substrate held by the substrate holding unit. 5. The film forming apparatus according to any one of 4 above.   2. The inductively coupled electrode section, the source gas supply section, and the substrate holding section of the electrode unit are arranged in the chamber so that they are vertically upward in this order. The thin film formation apparatus in any one of -5.

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