JP2015092559A - Electric charge transportation type varnish, electric charge transportation type thin film and organic electroluminescent element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric charge transportation type varnish which provides a thin film capable of achieving excellent luminance characteristics when the electric charge transportation type varnish is applied to a hole injection layer of an organic EL element, an electric charge transportation type thin film and an organic EL element.SOLUTION: An electric charge transportation type varnish contains an electric charge transportation type material consisting of thiophene derivative represented by a formula (1), a dopant, and an organic solvent.

Description

  The present invention relates to a charge transport varnish, a charge transport thin film, and an organic electroluminescence (hereinafter referred to as organic EL) device.

  In an organic EL element, a charge transporting thin film made of an organic compound is used as a light emitting layer or a charge injection layer. In particular, the hole injection layer is responsible for charge transfer between the anode and the hole transport layer or the light emitting layer, and plays an important function to achieve low voltage driving and high luminance of the organic EL element.

  The method of forming the hole injection layer is roughly divided into a dry process typified by vapor deposition and a wet process typified by spin coating. When these processes are compared, the wet process is more flat in a larger area. Can be manufactured efficiently. Therefore, at the present time when the area of the organic EL display is being increased, a hole injection layer that can be formed by a wet process is desired.

  In view of such circumstances, the present inventors are applicable to various wet processes and have a charge transport property that provides a thin film that can realize excellent EL element characteristics when applied to a hole injection layer of an organic EL element. Compounds having good solubility in materials and organic solvents used therefor have been developed (see, for example, Patent Documents 1 to 4).

International Publication No. 2008/032616 International Publication No. 2008/129947 International Publication No. 2006/025342 International Publication No. 2010/058777

  The present invention provides a charge transporting varnish that provides a thin film capable of realizing excellent characteristics when applied to a hole injection layer of an organic EL element, as in the technology of the above-mentioned patent document that has been developed so far. Objective.

  As a result of intensive studies to achieve the above object, the present inventors have found that a thin film obtained from a varnish containing a predetermined thiophene derivative, a dopant, and an organic solvent has a high charge transport property. When the thin film is applied to a hole injection layer of an organic EL device, it has been found that excellent luminance characteristics and excellent durability can be realized, and the present invention has been completed.

（式中、Ａｒは、式（２−１）〜（２−１０）

のいずれかで表される２価の基を表し、
Ｒ¹〜Ｒ³⁶は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、カルボン酸基、Ｚ¹で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルケニル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルキニル基、Ｚ²で置換されていてもよい炭素数６〜２０のアリール基、−Ｃ(Ｏ)Ｙ¹基、−ＯＹ²基、−ＳＹ³基、−Ｃ(Ｏ)ＯＹ⁴基、−ＯＣ(Ｏ)Ｙ⁵基、−Ｃ(Ｏ)ＮＨＹ⁶基又は−Ｃ(Ｏ)ＮＹ⁷Ｙ⁸基を表し、Ｒ³〜Ｒ⁶がアルキル基、アルケニル基、アルキニル基、アリール基、−Ｃ(Ｏ)Ｙ¹基、−ＯＹ²基、−ＳＹ³基、−Ｃ(Ｏ)ＯＹ⁴基、−ＯＣ(Ｏ)Ｙ⁵基、−Ｃ(Ｏ)ＮＨＹ⁶基又は−Ｃ(Ｏ)ＮＹ⁷Ｙ⁸基である場合、Ｒ³とＲ⁴と及び／又はＲ⁵とＲ⁶とは、互いに結合して２価の基を形成していてもよく、
Ｙ¹〜Ｙ⁸は、それぞれ独立に、Ｚ¹で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルケニル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルキニル基又はＺ²で置換されていてもよい炭素数６〜２０のアリール基を表し、
Ｚ¹は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボン酸基又はＺ³で置換されていてもよい炭素数６〜２０のアリール基を表し、
Ｚ²は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボン酸基、Ｚ³で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ³で置換されていてもよい炭素数２〜２０のアルケニル基又はＺ³で置換されていてもよい炭素数２〜２０のアルキニル基を表し、
Ｚ³は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基又はカルボン酸基を表す。）
２．上記ドーパントが、ヘテロポリ酸を含む１の電荷輸送性ワニス。
３．更に、有機シラン化合物を含む１又は２の電荷輸送性ワニス。
４．更に、下記式（５）で表されるテトラシアノキノジメタン化合物を含む１〜３のいずれかの電荷輸送性ワニス。

（式中、Ｒ¹⁰¹〜Ｒ¹⁰⁴は、それぞれ独立に、水素原子又はハロゲン原子を表すが、少なくとも１つはハロゲン原子である。）
５．１〜４のいずれかの電荷輸送性ワニスを用いて作製される電荷輸送性薄膜。
６．５の電荷輸送性薄膜を有する有機エレクトロルミネッセンス素子。
７．上記電荷輸送性薄膜が、正孔注入層又は正孔輸送層である６の有機エレクトロルミネッセンス素子。
８．１〜４のいずれかの電荷輸送性ワニスを基材上に塗布して焼成することを特徴とする電荷輸送性薄膜の製造方法。
９．５の電荷輸送性薄膜を用いることを特徴とする有機エレクトロルミネッセンス素子の製造方法。
１０．式（１）で表されるチオフェン誘導体からなる電荷輸送性物質と、ドーパントとを含むことを特徴とする電荷輸送性材料。

（式中、Ａｒは、式（２−１）〜（２−１０）

のいずれかで表される２価の基を表し、
Ｒ¹〜Ｒ³⁶は、それぞれ独立に、水素原子、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、カルボン酸基、Ｚ¹で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルケニル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルキニル基、Ｚ²で置換されていてもよい炭素数６〜２０のアリール基、−Ｃ(Ｏ)Ｙ¹基、−ＯＹ²基、−ＳＹ³基、−Ｃ(Ｏ)ＯＹ⁴基、−ＯＣ(Ｏ)Ｙ⁵基、−Ｃ(Ｏ)ＮＨＹ⁶基又は−Ｃ(Ｏ)ＮＹ⁷Ｙ⁸基を表し、Ｒ³〜Ｒ⁶がアルキル基、アルケニル基、アルキニル基、アリール基、−Ｃ(Ｏ)Ｙ¹基、−ＯＹ²基、−ＳＹ³基、−Ｃ(Ｏ)ＯＹ⁴基、−ＯＣ(Ｏ)Ｙ⁵基、−Ｃ(Ｏ)ＮＨＹ⁶基又は−Ｃ(Ｏ)ＮＹ⁷Ｙ⁸基である場合、Ｒ³とＲ⁴と及び／又はＲ⁵とＲ⁶とは、互いに結合して２価の基を形成していてもよく、
Ｙ¹〜Ｙ⁸は、それぞれ独立に、Ｚ¹で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルケニル基、Ｚ¹で置換されていてもよい炭素数２〜２０のアルキニル基又はＺ²で置換されていてもよい炭素数６〜２０のアリール基を表し、
Ｚ¹は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボン酸基又はＺ³で置換されていてもよい炭素数６〜２０のアリール基を表し、
Ｚ²は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基、カルボン酸基、Ｚ³で置換されていてもよい炭素数１〜２０のアルキル基、Ｚ³で置換されていてもよい炭素数２〜２０のアルケニル基又はＺ³で置換されていてもよい炭素数２〜２０のアルキニル基を表し、
Ｚ³は、ハロゲン原子、ニトロ基、シアノ基、アルデヒド基、ヒドロキシ基、チオール基、スルホン酸基又はカルボン酸基を表す。） That is, the present invention provides the following charge transporting varnish, charge transporting thin film, and organic EL device.
1. A charge transporting varnish comprising a charge transporting material comprising a thiophene derivative represented by the formula (1), a dopant, and an organic solvent.

(In the formula, Ar represents the formulas (2-1) to (2-10).

A divalent group represented by any of the following:
R ^{1 to} R ³⁶ each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a carboxylic acid group, or a carbon number of 1 to 20 that may be substituted with Z ^1. alkyl group, Z ¹ in an optionally substituted alkenyl group having 2 to 20 carbon atoms, an alkynyl group which may C2-20 optionally substituted by Z ^1, the carbon may be substituted with Z ² Formula 6-20 aryl group, -C (O) Y ¹ group, -OY ² group, -SY ³ group, -C (O) OY ⁴ group, -OC (O) Y ⁵ group, -C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group is represented, and R ^{3 to} R ⁶ are alkyl groups, alkenyl groups, alkynyl groups, aryl groups, —C (O) Y ¹ groups, —OY ² groups, — In the case of SY ³ group, —C (O) OY ⁴ group, —OC (O) Y ⁵ group, —C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group, R ³ and R ⁴ And / Is R ⁵ and R ^6, may form a divalent group bonded to each other,
Y ¹ to Y ⁸ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^1, alkenyl group which may C2-20 optionally substituted by Z ^1, in Z ¹ Represents an optionally substituted alkynyl group having 2 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ² ;
Z ¹ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ³ ;
Z ² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group of Z ³ carbon atoms which may be substituted with 1 to 20, Z ³ Represents an alkenyl group having 2 to 20 carbon atoms which may be substituted with or an alkynyl group having 2 to 20 carbon atoms which may be substituted with Z ³ ;
Z ³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group. )
2. One charge transporting varnish in which the dopant contains a heteropolyacid.
3. Furthermore, the 1 or 2 charge transportable varnish containing an organosilane compound.
4). Furthermore, the charge transportable varnish according to any one of 1 to 3, comprising a tetracyanoquinodimethane compound represented by the following formula (5).

(In the formula, R ^{101 to} R ¹⁰⁴ each independently represents a hydrogen atom or a halogen atom, but at least one is a halogen atom.)
5. A charge transporting thin film produced using any one of the charge transporting varnishes of 1-4.
An organic electroluminescence device having a charge transporting thin film of 6.5.
7). 6. The organic electroluminescence device according to 6, wherein the charge transporting thin film is a hole injection layer or a hole transport layer.
8. A method for producing a charge-transporting thin film, comprising applying the charge-transporting varnish of any one of 1 to 4 onto a substrate and baking.
A method for producing an organic electroluminescent device, comprising using the charge transporting thin film of 9.5.
10. A charge transport material comprising a charge transport material comprising a thiophene derivative represented by the formula (1) and a dopant.

(In the formula, Ar represents the formulas (2-1) to (2-10).

A divalent group represented by any of the following:
R ^{1 to} R ³⁶ each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a carboxylic acid group, or a carbon number of 1 to 20 that may be substituted with Z ^1. alkyl group, Z ¹ in an optionally substituted alkenyl group having 2 to 20 carbon atoms, an alkynyl group which may C2-20 optionally substituted by Z ^1, the carbon may be substituted with Z ² Formula 6-20 aryl group, -C (O) Y ¹ group, -OY ² group, -SY ³ group, -C (O) OY ⁴ group, -OC (O) Y ⁵ group, -C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group is represented, and R ^{3 to} R ⁶ are alkyl groups, alkenyl groups, alkynyl groups, aryl groups, —C (O) Y ¹ groups, —OY ² groups, — In the case of SY ³ group, —C (O) OY ⁴ group, —OC (O) Y ⁵ group, —C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group, R ³ and R ⁴ And / Is R ⁵ and R ^6, may form a divalent group bonded to each other,
Y ¹ to Y ⁸ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^1, alkenyl group which may C2-20 optionally substituted by Z ^1, in Z ¹ Represents an optionally substituted alkynyl group having 2 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ² ;
Z ¹ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ³ ;
Z ² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group of Z ³ carbon atoms which may be substituted with 1 to 20, Z ³ Represents an alkenyl group having 2 to 20 carbon atoms which may be substituted with or an alkynyl group having 2 to 20 carbon atoms which may be substituted with Z ³ ;
Z ³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group. )

The thiophene derivative used in the present invention is easily soluble in an organic solvent, and the charge transporting varnish can be easily prepared by dissolving it in an organic solvent together with a dopant.
Since the thin film produced from the charge transport varnish of the present invention exhibits high charge transport properties, it can be suitably used as a thin film for electronic devices including organic EL elements. In particular, by applying this thin film to a hole injection layer of an organic EL element, an organic EL element having excellent luminance characteristics and durability can be obtained.
Furthermore, the charge transporting varnish of the present invention contains an organosilane compound or a tetracyanoquinodimethane compound, so that it can be fired at a lower temperature than conventional ones. Has charge transport properties.
In addition, since the charge transporting varnish of the present invention can produce a thin film excellent in charge transporting properties with good reproducibility even when using various wet processes capable of forming a large area such as a spin coating method and a slit coating method, It can sufficiently cope with recent progress in the field of organic EL elements.
The thin film obtained from the charge transporting varnish of the present invention can also be used as an antistatic film, an anode buffer layer of an organic thin film solar cell, or the like.

[Charge transport material]
The charge transporting varnish of the present invention contains a charge transporting material composed of a thiophene derivative represented by the following formula (1).

  In the present invention, charge transportability is synonymous with conductivity, and is synonymous with hole transportability. The charge transporting substance itself may be charge transporting, or may be charge transporting when used with an electron accepting substance. The charge transporting varnish may itself have a charge transporting property, and the resulting solid film may have a charge transporting property.

In the formula, Ar represents a divalent group represented by any one of formulas (2-1) to (2-10).

R ^{1 to} R ³⁶ each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a carboxylic acid group, or a carbon number of 1 to 20 that may be substituted with Z ^1. alkyl group, Z ¹ in an optionally substituted alkenyl group having 2 to 20 carbon atoms, an alkynyl group which may C2-20 optionally substituted by Z ^1, the carbon may be substituted with Z ² Formula 6-20 aryl group, -C (O) Y ¹ group, -OY ² group, -SY ³ group, -C (O) OY ⁴ group, -OC (O) Y ⁵ group, -C (O) NHY represents a ^six or -C (O) NY ⁷ Y ⁸ groups. R ^{3 to} R ⁶ are alkyl groups, alkenyl groups, alkynyl groups, aryl groups, —C (O) Y ¹ groups, —OY ² groups, —SY ³ groups, —C (O) OY ⁴ groups, —OC (O ) Y ⁵ group, —C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group, R ³ and R ⁴ and / or R ⁵ and R ⁶ are bonded to each other to form 2 A valent group may be formed.

Y ¹ to Y ⁸ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^1, alkenyl group which may C2-20 optionally substituted by Z ^1, in Z ¹ An alkynyl group having 2 to 20 carbon atoms which may be substituted or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ² is represented.

Z ¹ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ³ .

Z ² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group of Z ³ carbon atoms which may be substituted with 1 to 20, Z ³ Represents an alkenyl group having 2 to 20 carbon atoms which may be substituted with or an alkynyl group having 2 to 20 carbon atoms which may be substituted with Z ³ .

Z ³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group.

  Examples of the halogen atom include fluorine, chlorine, bromine and iodine atoms.

  The alkyl group having 1 to 20 carbon atoms may be linear, branched, or cyclic. For example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, s -C1-C20 linear or branched such as -butyl group, t-butyl group, n-pentyl group, n-hexyl group, n-heptyl group, n-octyl group, n-nonyl group, n-decyl group Alkyl group; cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, cycloheptyl group, cyclooctyl group, cyclononyl group, cyclodecyl group, bicyclobutyl group, bicyclopentyl group, bicyclohexyl group, bicycloheptyl group, bicyclooctyl group And cyclic alkyl groups having 3 to 20 carbon atoms such as a bicyclononyl group and a bicyclodecyl group.

  Specific examples of the alkenyl group having 2 to 20 carbon atoms include ethenyl group, n-1-propenyl group, n-2-propenyl group, 1-methylethenyl group, n-1-butenyl group, n-2-butenyl group, n-3-butenyl group, 2-methyl-1-propenyl group, 2-methyl-2-propenyl group, 1-ethylethenyl group, 1-methyl-1-propenyl group, 1-methyl-2-propenyl group, n- Examples include 1-pentenyl group, n-1-decenyl group, n-1-eicocenyl group and the like.

  Specific examples of the alkynyl group having 2 to 20 carbon atoms include ethynyl group, n-1-propynyl group, n-2-propynyl group, n-1-butynyl group, n-2-butynyl group, and n-3-butynyl. Group, 1-methyl-2-propynyl group, n-1-pentynyl group, n-2-pentynyl group, n-3-pentynyl group, n-4-pentynyl group, 1-methyl-n-butynyl group, 2- Methyl-n-butynyl group, 3-methyl-n-butynyl group, 1,1-dimethyl-n-propynyl group, n-1-hexynyl group, n-1-decynyl group, n-1-pentadecynyl group, n- 1-eicosinyl group etc. are mentioned.

  Specific examples of the aryl group having 6 to 20 carbon atoms include phenyl group, 1-naphthyl group, 2-naphthyl group, 1-anthryl group, 2-anthryl group, 9-anthryl group, 1-phenanthryl group, 2-phenanthryl group. Group, 3-phenanthryl group, 4-phenanthryl group, 9-phenanthryl group and the like.

When R ³ and R ⁴ and / or R ⁵ and R ⁶ are bonded to each other to form a divalent group, the divalent group includes an ethylene group, a trimethylene group, a tetramethylene group, a methylenedioxy group. Group, 1,2-ethylenedioxy group, 1,3-trimethylenedioxy group and the like.

R ^{1 to} R ⁶ are preferably a hydrogen atom, an alkyl group having 1 to 20 carbon atoms which may be substituted with Z ¹ , a —OY ² group or a —SY ³ group, and is substituted with a hydrogen atom or Z ^1. More preferably an alkyl group having 1 to 20 carbon atoms and —OY ² group, and still more preferably an alkyl group having 1 to 20 carbon atoms which may be substituted with a hydrogen atom or Z ¹ , R ^{1 to} R ^3. And R ⁶ is a hydrogen atom, and R ⁴ and R ⁵ are both an alkyl group having 1 to 20 carbon atoms, —OY ² group, or —SY ³ group, which may be substituted with Z ¹ , or More preferably, R ¹ and R ² are hydrogen atoms, and R ³ and R ⁴ and R ⁵ and R ⁶ together form a 1,2-ethylenedioxy group.

R ^{7 to} R ³⁶ are preferably a hydrogen atom or an alkyl group having 1 to 20 carbon atoms which may be substituted with Z ¹ , and a hydrogen atom is optimal.

Incidentally, R ¹ to R ³⁶ and Y ¹ to Y ⁸ are an alkyl group, an alkenyl group, if an alkynyl group or an aryl group, the Z ^1, halogen atom or Z ³ carbon atoms, which may be substituted with 6 Twenty aryl groups are preferred, more preferably a phenyl group that may be substituted with Z ³ , and optimally absent (ie, unsubstituted).
The Z ^2, a halogen atom or an alkyl group Z ³ carbon atoms which may be substituted with 1 to 20, more preferably an alkyl group having 1 to 10 carbon atoms optionally substituted by Z ^3, Z more preferably more alkyl group which may C1-8 be substituted with ^3, more preferably an alkyl group having carbon atoms which may be have 1-6 substituted with Z ^3, that does not exist (i.e., unsubstituted Is optimal).
Z ³ is preferably a halogen atom, more preferably a fluorine atom, and most preferably not (ie, unsubstituted).

  Hereinafter, although the specific example of the thiophene derivative represented by Formula (1) is given, it is not necessarily limited to these. In the formula, “Me” represents a methyl group, “Et” represents an ethyl group, “n-Pr” represents an n-propyl group, “n-Bu” represents an n-butyl group, and “n-Pen”. Represents an n-pentyl group, and “n-Hex” represents an n-hexyl group.

[Method for producing thiophene derivative]
Thiophene derivatives used in the present invention include, for example, Chemistry of Materials 2010, 22, pp. 5314-5318, Chemistry of Materials 2012, 24, pp. 3964-3971, Tetrahedron Letters 2005, 46, pp. 8153-8157, Journal of Although it can synthesize | combine according to the method as described in American Chemical Society 2007, 129, pp. 12386-12387 etc., it is not limited to these methods.

（式中、Ｒ⁷〜Ｒ³⁶は上記と同じ。） Specifically, the thiophene derivative used in the present invention includes, for example, compounds represented by the following formulas (2′-1) to (2′-10) and thiophene or a derivative thereof as a starting material, Kumada coupling, -It can be synthesized by a coupling reaction such as Kosugi / Still coupling, Negishi coupling, Suzuki / Miyaura coupling, Hiyama coupling.

(In the formula, R ^{7 to} R ³⁶ are the same as above.)

  As the compounds represented by the formulas (2′-1) to (2′-10), commercially available products may be used, and known methods (Synthetic Communications, 1991, 21 (1), pp. 145-9, Bulletin of the Chemical Society of Japan, 1993, 66 (7), pp. 2033-41, Heterocycles, 2000, 52 (2), pp. 761-774, Tetrahedron Letters, 1997, 38 (26), pp. 4581- 4582, Zhurnal Obshchei Khimii, 1986, 56 (9), pp. 2087-91, Chemistry of Materials, 2010, 22 (18), pp. 5314-5318, ARKIVOC (Gainesville, FL, United States), 2008, (5 ), 90-101, Organic Reactions (Hoboken, NJ, United States), 1984, 30, No pp. Given, Chemica Scripta, 1977, 12 (2-3), pp. 57-67, Journal of Heterocyclic Chemistry, 1990 , 27 (7), pp. 1867-71, Journal of Organic Chemistry, 2005, 70, pp. 10569-10571, Journal of Organic Chemistry, 1994, 59, pp. 3077-3081, Journal of the Chemical Society, Perkin Transactions 1983, pp. 2813-2819 etc.) may be used.

（式中、Ｒ¹〜Ｒ⁸は上記と同じ。） For example, in order to halogenate or stannylate a compound represented by the formula (2′-1) and cause a cross-coupling reaction with the compound, the thiophene represented by the formula (3) and (4) Alternatively, the derivative thereof may be subjected to a coupling reaction by stannylation or the like or halogenation. The same applies when compounds represented by formulas (2′-2) to (2′-10) are used instead of the compounds represented by formula (2′-1).

(In the formula, R ^{1 to} R ⁸ are the same as above.)

  In this case, the charging ratio of the thiophene represented by the formulas (3) and (4) or the derivative thereof is usually triphenylamine represented by the formulas (2′-1) to (2′-10) or a derivative thereof. On the other hand, it is about 0.5 to 1.5 equivalents, preferably about 0.6 to 1.0 equivalents.

  In addition, as a compound represented by Formula (3) and (4), a commercial item may be used or you may synthesize | combine by a well-known method.

[Dopant]
The charge transporting varnish of the present invention contains a dopant. The dopant is not particularly limited, and both organic dopants and inorganic dopants can be used.

  Among these, as the most preferred embodiment, the charge transporting varnish of the present invention contains a heteropolyacid as a dopant, and therefore, from a transparent electrode typified by indium tin oxide (ITO) and indium zinc oxide (IZO) It is possible to obtain a thin film excellent not only in high hole acceptability but also in charge transportability that exhibits high hole acceptability from a metal anode typified by aluminum.

  The heteropolyacid is typically a Keggin type represented by the formula (A1) or a Dawson type chemical structure represented by the formula (A2), and has a structure in which a hetero atom is located at the center of the molecule. V), molybdenum (Mo), tungsten (W) and other oxoacids such as isopolyacids, and polyacids formed by condensation of oxoacids of different elements. Examples of such oxo acids of different elements mainly include silicon (Si), phosphorus (P), and arsenic (As) oxo acids.

  Specific examples of the heteropolyacid include phosphomolybdic acid, silicomolybdic acid, phosphotungstic acid, silicotungstic acid, and phosphotungstomolybdic acid. You may use these individually by 1 type or in combination of 2 or more types. In addition, the heteropolyacid used by this invention is available as a commercial item, and can also be synthesize | combined by a well-known method.

  In particular, when the dopant is composed of one type of heteropolyacid, the one type of heteropolyacid is preferably phosphotungstic acid or phosphomolybdic acid, and more preferably phosphotungstic acid. Moreover, when a dopant consists of 2 or more types of heteropolyacids, it is preferable that at least 1 is the phosphotungstic acid or phosphomolybdic acid among the 2 or more types of heteropolyacid, and it is more preferable that it is phosphotungstic acid.

  In addition, in the quantitative analysis such as elemental analysis, the heteropolyacid may be a commercially available product obtained from a structure represented by the general formula or a small number of elements, or a known synthesis method. As long as it is appropriately synthesized according to the above, it can be used in the present invention.

That is, for example, phosphotungstic acid is generally represented by the chemical formula H ₃ (PW ₁₂ O ₄₀ ) · nH ₂ O, and phosphomolybdic acid is represented by the chemical formula H ₃ (PMo ₁₂ O ₄₀ ) · nH ₂ O. In quantitative analysis, even if the number of P (phosphorus), O (oxygen), W (tungsten) or Mo (molybdenum) in this formula is large or small, it is obtained as a commercial product, or As long as it is appropriately synthesized according to a known synthesis method, it can be used in the present invention. In this case, the mass of the heteropolyacid defined in the present invention is not the mass of pure phosphotungstic acid (phosphotungstic acid content) in the synthesized product or commercially available product, but a commercially available form and a known synthesis. In a form that can be isolated by the method, it means the total mass in a state containing hydration water and other impurities.

  The heteropolyacid contained in the charge transporting varnish of the present invention can be about 1.0 to 70.0 in terms of mass ratio with respect to the charge transporting material 1, but preferably 2.0 to 60.0. The degree is more preferably about 2.5 to 55.0, and still more preferably about 2.5 to 25.0.

[Organic solvent]
As the organic solvent used when preparing the charge transporting varnish, a highly soluble solvent that can dissolve the charge transporting substance and the dopant well can be used.
Examples of such highly soluble solvents include organic solvents such as N, N-dimethylformamide, N, N-dimethylacetamide, N-methylpyrrolidone, 1,3-dimethyl-2-imidazolidinone, and diethylene glycol monomethyl ether. Can be used. These solvents can be used alone or in combination of two or more, and the amount used can be 5 to 100% by mass with respect to the total solvent used in the varnish.
Note that both the charge transporting substance and the dopant are preferably completely dissolved in the solvent.

In the present invention, the varnish has a viscosity of 10 to 200 mPa · s, particularly 35 to 150 mPa · s at 25 ° C., and a boiling point of 50 to 300 ° C., particularly 150 to 250 ° C. at normal pressure (atmospheric pressure). By containing at least one high-viscosity organic solvent, it becomes easy to adjust the viscosity of the varnish, and as a result, it is possible to prepare a varnish according to the coating method to be used, which gives a thin film with high flatness with good reproducibility.
The high-viscosity organic solvent is not particularly limited. For example, cyclohexanol, ethylene glycol, ethylene glycol diglycidyl ether, 1,3-octylene glycol, diethylene glycol, dipropylene glycol, triethylene glycol, tripropylene glycol 1,3-butanediol, 2,3-butanediol, 1,4-butanediol, propylene glycol, hexylene glycol and the like. These solvents may be used alone or in combination of two or more.
The addition ratio of the high-viscosity organic solvent to the entire solvent used in the varnish of the present invention is preferably in the range where no solid precipitates, and the addition ratio is preferably 5 to 80% by mass as long as no solid precipitates.

Furthermore, for the purpose of improving the wettability to the substrate, adjusting the surface tension of the solvent, adjusting the polarity, adjusting the boiling point, etc., other solvents are used in an amount of 1 to 90% by mass, preferably It can also be mixed at a ratio of 1 to 50% by mass.
Examples of such solvents include ethylene glycol monobutyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, diethylene glycol monoethyl ether, diethylene glycol Examples include, but are not limited to, acetone alcohol, γ-butyrolactone, ethyl lactate, n-hexyl acetate, propylene glycol monomethyl ether, and the like. These solvents can be used alone or in combination of two or more.

The viscosity of the varnish of the present invention is appropriately set according to the thickness of the thin film to be produced and the solid content concentration, but is usually 1 to 50 mPa · s at 25 ° C.
The solid content concentration of the charge transporting varnish in the present invention is appropriately set in consideration of the viscosity and surface tension of the varnish, the thickness of the thin film to be produced, etc. In consideration of improving the coatability of the varnish, it is preferably about 0.5 to 5.0% by mass, and more preferably about 1.0 to 3.0% by mass.

[Organic Silane Compound]
The charge transport varnish of the present invention preferably contains an organosilane compound. Examples of the organosilane compound include dialkoxysilane compounds, trialkoxysilane compounds, and tetraalkoxysilane compounds. You may use these individually by 1 type or in combination of 2 or more types.

  In particular, the organic silane compound preferably includes one selected from dialkoxysilane compounds and trialkoxysilane compounds, and more preferably includes trialkoxysilane compounds.

Examples of the dialkoxysilane compound, trialkoxysilane compound, and tetraalkoxysilane compound include those represented by the formulas (B1) to (B3).
SiR ' ₂ (OR) ₂ (B1)
SiR '(OR) ₃ (B2)
Si (OR) ₄ (B3)

In the formula, R is a substituted each independently, Z ¹⁰¹ with an optionally substituted alkyl group having 1 to 20 carbon atoms, an alkenyl group which may C2-20 optionally substituted by Z ^101, with Z ¹⁰¹ is an alkynyl group having a carbon number of 2 to 20 even if, heteroaryl aryl or Z ¹⁰² good 2 to 20 carbon atoms optionally substituted by from 6 to 20 carbon atoms which may be substituted with Z ¹⁰² Represents. R 'is independently, Z ¹⁰³ alkyl group carbon atoms which may be have 1 to 20 substituted by an alkenyl group which may C2-20 optionally substituted by Z ^103, substituted by Z ¹⁰³ an alkynyl group having 2 to 20 carbon atoms also represents a heteroaryl group the aryl group or Z ¹⁰⁴ good 2 to 20 carbon atoms optionally substituted by from 6 to 20 carbon atoms which may be substituted with Z ¹⁰⁴ .

Z ¹⁰¹ represents a halogen atom, the heteroaryl group of the aryl group or Z ¹⁰⁵ good 2 to 20 carbon atoms optionally substituted by from 6 to 20 carbon atoms which may be substituted with Z ^105.
Z ¹⁰² is a halogen atom, optionally substituted alkenyl group, or Z ¹⁰⁵ of is an alkyl group having 1 to 20 carbon atoms also be good 2-20 carbon atoms substituted with Z ¹⁰⁵ substituted with Z ¹⁰⁵ Or an alkynyl group having 2 to 20 carbon atoms.

Z ¹⁰³ is a halogen atom, Z ¹⁰⁵ with an optionally substituted aryl group having 6 to 20 carbon atoms, a heteroaryl group which may C2-20 optionally substituted by Z ^105, epoxycyclohexyl group, a glycidoxy group , Methacryloxy group, acryloxy group, ureido group (—NHCONH ₂ ), thiol group, isocyanate group (—NCO), amino group, —NHY ¹⁰¹ group or —NY ¹⁰² Y ¹⁰³ group.
Z ¹⁰⁴ is a halogen atom, Z ¹⁰⁵ alkyl group carbon atoms which may be have 1 to 20 substituted by an alkenyl group which may C2-20 optionally substituted by Z ^105, be substituted with Z ¹⁰⁵ alkynyl group which may having 2 to 20 carbon atoms, an epoxycyclohexyl group, a glycidoxy group, a methacryloxy group, an acryloxy group, a ureido group (-NHCONH _2), thiol group, isocyanate group (-NCO), amino group, -NHY ¹⁰¹ group or —NY ¹⁰² represents a Y ¹⁰³ group.

Y ¹⁰¹ to Y ¹⁰³ each independently, an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^105, alkenyl group which may C2-20 optionally substituted by Z ^105, with Z ¹⁰⁵ an optionally substituted alkynyl group having 2 to 20 carbon atoms, heteroaryl aryl or Z ¹⁰⁵ good 2 to 20 carbon atoms optionally substituted by from 6 to 20 carbon atoms which may be substituted with Z ¹⁰⁵ Represents a group.
Z ¹⁰⁵ represents a halogen atom, an amino group, a nitro group, a cyano group or a thiol group.

  As the halogen atom, the alkyl group having 1 to 20 carbon atoms, the alkenyl group having 2 to 20 carbon atoms, the alkynyl group having 2 to 20 carbon atoms, and the aryl group having 6 to 20 carbon atoms in formulas (B1) to (B3), The thing similar to the above is mentioned.

The R, which may be substituted with an alkyl group, an alkenyl group, or Z ¹⁰² good 2 to 20 carbon atoms optionally substituted by Z ¹⁰¹ of carbon atoms which may be have 1-20 substituted with Z ¹⁰¹ carbon preferably an aryl group having 6 to 20, substituted with an alkyl group, an alkenyl group, or Z ¹⁰² 2-6 carbon atoms which may be substituted with Z ¹⁰¹ of carbon atoms which may be have 1-6 substituted with Z ¹⁰¹ more preferably a phenyl group which is, more preferably more even a phenyl group substituted with an alkyl group or Z ¹⁰² of 1 to 4 carbon atoms which may be substituted with Z ^101, is substituted with Z ¹⁰¹ An optionally substituted methyl group or ethyl group is more preferable.

R ′ is preferably an alkyl group having 1 to 20 carbon atoms which may be substituted with Z ¹⁰³ or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ¹⁰⁴ , and is substituted with Z ^103. More preferably an alkyl group having 1 to 10 carbon atoms which may be substituted or an aryl group having 6 to 14 carbon atoms which may be substituted with Z ¹⁰⁴ , and an alkyl having 1 to 6 carbon atoms which may be substituted with Z ¹⁰³ more preferably more aryl group which may having 6 to 10 carbon atoms optionally substituted by a group or Z ^104, which may be substituted with an alkyl group or Z ¹⁰⁴ of 1 to 4 carbon atoms which may be substituted with Z ¹⁰³ A good phenyl group is more preferred.

  A plurality of R may be the same or different, and a plurality of R ′ may all be the same or different.

Z ¹⁰¹ is preferably a halogen atom or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ¹⁰⁵ , more preferably a fluorine atom or a phenyl group which may be substituted with Z ¹⁰⁵ , and not present ( That is, it is optimal to be unsubstituted.

As the Z ^102, a halogen atom or Z is preferably an alkyl group which may having 6 to 20 carbon atoms optionally substituted by ^105, a fluorine atom or Z ¹⁰⁵ of carbon atoms which may be have 1 to 10 substituted by an alkyl group Is more preferred and not present (ie, unsubstituted).

On the other hand, the Z ^103, a halogen atom, Z ¹⁰⁵ phenyl group which may be substituted by, may furanyl group optionally substituted by Z ^105, epoxycyclohexyl group, a glycidoxy group, a methacryloxy group, an acryloxy group, a ureido group, thiol group, isocyanate group, amino group, good diphenylamino group optionally substituted by a phenyl amino group, or Z ¹⁰⁴ may be substituted with Z ¹⁰⁵ preferably that more preferably a halogen atom, no fluorine atom or presence ( That is, it is even more preferable that it is unsubstituted.

As the Z ^104, a halogen atom, Z ¹⁰⁵ carbon atoms which may be substituted with 1 to 20 alkyl group, which may be furanyl substituted with Z ^105, epoxycyclohexyl group, a glycidoxy group, a methacryloxy group, acryloxy group, ureido group, a thiol group, isocyanate group, amino group, good diphenylamino group optionally substituted by a phenyl amino group, or Z ¹⁰⁵ may be substituted with Z ¹⁰⁵ preferably, more preferably a halogen atom, fluorine Even more preferred is an atom or absence (ie, unsubstituted).

Z ¹⁰⁵ is preferably a halogen atom, more preferably a fluorine atom or not (that is, unsubstituted).

Specific examples of the organosilane compound that can be used in the present invention will be given below, but the present invention is not limited thereto.
Specific examples of dialkoxysilane compounds include dimethyldimethoxysilane, dimethyldiethoxysilane, methylethyldimethoxysilane, diethyldimethoxysilane, diethyldiethoxysilane, methylpropyldimethoxysilane, methylpropyldiethoxysilane, diisopropyldimethoxysilane, and phenylmethyl. Dimethoxysilane, vinylmethyldimethoxysilane, 3-glycidoxypropylmethyldimethoxysilane, 3-glycidoxypropylmethyldiethoxysilane, 3- (3,4-epoxycyclohexyl) ethylmethyldimethoxysilane, 3-methacryloxy Propylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane, 3-mercaptopropylmethyldimethoxysilane, 3-aminopropylmethyl Diethoxy silane, N- (2- aminoethyl) aminopropyl methyl dimethoxy silane, 3,3,3-trifluoropropyl methyl dimethoxy silane, and the like.

  Specific examples of trialkoxysilane compounds include methyltrimethoxysilane, methyltriethoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, propyltrimethoxysilane, propyltriethoxysilane, butyltrimethoxysilane, butyltriethoxysilane, Pentyltrimethoxysilane, pentyltriethoxysilane, heptyltrimethoxysilane, heptyltriethoxysilane, octyltrimethoxysilane, octyltriethoxysilane, dodecyltrimethoxysilane, dodecyltriethoxysilane, hexadecyltrimethoxysilane, hexadecyltriethoxy Silane, octadecyltrimethoxysilane, octadecyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, vinyl Rutrimethoxysilane, vinyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-glycidoxypropyltriethoxysilane, 3-methacryloxypropyl Trimethoxysilane, 3-methacryloxypropyltriethoxysilane, triethoxy (4- (trifluoromethyl) phenyl) silane, dodecyltriethoxysilane, 3,3,3-trifluoropropyltrimethoxysilane, (triethoxysilyl) cyclohexane Perfluorooctylethyltriethoxysilane, triethoxyfluorosilane, tridecafluoro-1,1,2,2-tetrahydrooctyltriethoxysilane, pentafluorophenyltrimethoxysilane, pentaful Orophenyltriethoxysilane, 3- (heptafluoroisopropoxy) propyltriethoxysilane, heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane, triethoxy-2-thienylsilane, 3- (triethoxysilyl) ) Franc etc. are mentioned.

  Specific examples of the tetraalkoxysilane compound include tetramethoxysilane, tetraethoxysilane, and tetrapropoxysilane.

  Among these, 3,3,3-trifluoropropylmethyldimethoxysilane, triethoxy (4- (trifluoromethyl) phenyl) silane, 3,3,3-trifluoropropyltrimethoxysilane, perfluorooctylethyltriethoxysilane , Pentafluorophenyltrimethoxysilane, pentafluorophenyltriethoxysilane, and the like are preferable.

  The content of the organosilane compound in the charge transporting varnish of the present invention is usually about 0.1 to 50% by mass with respect to the total mass of the charge transporting substance and the dopant, but the charge transporting property of the thin film obtained is In consideration of suppressing the decrease and increasing the hole injecting ability to a layer laminated so as to be in contact with the hole injecting layer on the side opposite to the anode, such as a hole transporting layer and a light emitting layer, it is preferably 0. It is about 5-40 mass%, More preferably, it is about 0.8-30 mass%, More preferably, it is about 1-20 mass%.

[Tetracyanoquinodimethane compound]
The charge transporting varnish of the present invention preferably contains a tetracyanoquinodimethane compound represented by the formula (5). By including the tetracyanoquinodimethane compound, when the obtained thin film is used as a hole injection layer of an organic EL device, characteristics such as luminance are further improved. Further, even when the varnish is fired at a low temperature, a thin film having high flatness and high charge transportability can be produced with good reproducibility.

In the formula, R ^{101 to} R ¹⁰⁴ each independently represent a hydrogen atom or a halogen atom, but at least one is a halogen atom. The same thing as the above is mentioned as a halogen atom, A fluorine atom or a chlorine atom is preferable, and a fluorine atom is more preferable. Further, at least two of R ^{101 to} R ¹⁰⁴ are preferably halogen atoms, more preferably at least three are halogen atoms, and most preferably all are halogen atoms.

  Specific examples of the tetracyanoquinodimethane compound include tetrafluorotetracyanoquinodimethane (F4TCNQ), tetrachlorotetracyanoquinodimethane, 2-fluorotetracyanoquinodimethane, 2-chlorotetracyanoquinodimethane, 2 , 5-difluorotetracyanoquinodimethane, 2,5-dichlorotetracyanoquinodimethane, and the like. As the tetracyanoquinodimethane compound, F4TCNQ is particularly preferable.

  The content of the tetracyanoquinodimethane compound in the charge transporting varnish of the present invention is preferably 0.0001 to 1 equivalent, more preferably 0.001 to 0.5 equivalent, still more preferably 0 with respect to the thiophene derivative. 0.01 to 0.2 equivalents.

[Other ingredients]
The charge transporting varnish of the present invention may contain other charge transporting substances in addition to the above-described thiophene derivatives as long as the effects of the present invention are not hindered. Moreover, the charge transport varnish of the present invention may contain other substances as a dopant instead of the above-described heteropolyacid.

  Examples of other charge transporting substances include oligoaniline derivatives described in JP-A No. 2002-151272, oligoaniline compounds described in International Publication No. 2004/105446, and 1,4-elements described in International Publication No. 2005/043962. Examples thereof include compounds having a dithiine ring, oligoaniline compounds described in International Publication No. 2008/032617, oligoaniline compounds described in International Publication No. 2008/032616, aryldiamine compounds described in International Publication No. 2013/042623, and the like.

  In particular, the other charge transporting material is preferably an aniline derivative, and considering the solubility in an organic solvent, the molecular weight is preferably 4,000 or less, more preferably 3,000 or less, and even more preferably 2, 000 or less.

In the present invention, examples of aniline derivatives that can be suitably used as other charge transporting materials include those represented by the formula (6).

B ¹ represents a single bond, —NH—, —CH ₂ —, —S— or —O—, and is preferably a single bond or —NH—.

R ²⁰¹ to R ²⁰⁶ are each independently a hydrogen atom, a halogen atom, an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^201, which may be 2-20 carbons substituted with Z ²⁰¹ alkenyl group, an alkynyl group which may C2-20 optionally substituted by Z ^201, which may be substituted aryl group having 6 to 20 carbon atoms in Z ^202, carbon atoms, which may be substituted with Z ²⁰² 2-20 heteroaryl group, -OY ²⁰¹ group, -SY ²⁰² group, -NHY ^203, representing the -NY ²⁰⁴ Y ²⁰⁵ groups, or -NHC (O) Y ²⁰⁶ groups. Y ²⁰¹ to Y ²⁰⁶ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^201, alkenyl group which may C2-20 optionally substituted by Z ^201, with Z ²⁰¹ an optionally substituted alkynyl group having 2 to 20 carbon atoms, heteroaryl aryl or Z ²⁰² good 2 to 20 carbon atoms optionally substituted by from 6 to 20 carbon atoms which may be substituted with Z ²⁰² Represents a group. Specific examples of such a halogen atom, an alkyl group, an alkenyl group, an alkenyl group, an aryl group and a heteroaryl group are the same as those described above.

Z ²⁰¹ is a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group, an aryl group having 6 to 20 carbon atoms which may be substituted with Z ²⁰³ , or Z ²⁰³ The C2-C20 heteroaryl group which may be substituted by is represented.
Z ²⁰² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^203, Z ²⁰³ in represents a substituted good 2-20 carbon atoms which may have an alkenyl group or an alkynyl group which may C2-20 optionally substituted by Z ^203.
Z ²⁰³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group.

The R ²⁰¹ to R ^204, a hydrogen atom, a halogen atom, Z ²⁰¹ substituted by having 1 to 20 carbon atoms that may have an alkyl group, an aryl group of carbon atoms which may be have 6-20 substituted with Z ^202, alkoxy group with carbon atoms which may have from 1 to 20 substituted by Z ²⁰¹ (i.e., Y ²⁰¹ is -OY ²⁰¹ groups are alkyl groups of carbon atoms which may be have 1-20 substituted with Z ²⁰¹⁾ are preferred, hydrogen atom, a fluorine atom, an alkyl group having carbon atoms which may be have 1 to 10 substituted by Z ^201, which may be substituted aryl group having 6 to 14 carbon atoms in Z ^202, which may be substituted with Z ²⁰¹ more preferably an alkoxy group having 1 to 10 carbon atoms, a hydrogen atom, a fluorine atom, the carbon atoms which may be have 1-6 substitution at Z ²⁰¹ alkyl group, having 6 to 10 which may be substituted with Z ²⁰² aryl group, optionally carbon substituted with Z ²⁰¹ More preferably more an alkoxy group having 1 to 6, a hydrogen atom, a fluorine atom, an optionally substituted alkyl group having 1 to 6 carbon atoms in Z ^201, Z ²⁰¹ carbon atoms which may be substituted with 1-6 Are more preferable, and a hydrogen atom is most preferable.

On the other hand, as R ²⁰⁵ and R ²⁰⁶ , a hydrogen atom, a halogen atom, or a dialkylamino group that is an alkyl group having 1 to 20 carbon atoms in which each alkyl group may be substituted with Z ²⁰¹ (that is, Y ²⁰⁴ and Y ²⁰⁵ -NY ²⁰⁴ Y ²⁰⁵ groups optionally substituted alkyl group which may having 1 to 20 carbon atoms in Z ^201), or each aryl group which may have a number 6-20 carbon substituted with Z ²⁰² of A diarylamino group which is an aryl group (that is, —NY ²⁰⁴ Y ²⁰⁵ group which is an aryl group having 6 to 20 carbon atoms in which Y ²⁰⁴ and Y ²⁰⁵ may be substituted with Z ²⁰¹ ) is preferable, a hydrogen atom, a fluorine atom A dialkylamino group that is an alkyl group having 1 to 20 carbon atoms in which each alkyl group may be substituted with Z ²⁰¹ , or a C 6 to 20 carbon atom in which each aryl group may be substituted with Z ²⁰² . An aryl group More preferably a diarylamino group, a hydrogen atom, more preferably a diarylamino group substituted aryl group having 6 to 20 carbon atoms which may in each aryl group Z ^202, at the same time hydrogen atoms or each aryl group There diarylamino group is more preferably a substituted having 6 to 20 carbon atoms which may have an aryl group Z ^202.

  In the formula (6), p and q each independently represent an integer of 0 or more and satisfy 2 ≦ p + q ≦ 20, preferably 2 ≦ p + q ≦ 8, more preferably 2 ≦ p + q ≦ 6, and even more preferably. Satisfies 2 ≦ p + q ≦ 4.

In particular, the R ²⁰¹ to R ²⁰⁶ and Y ²⁰¹ ~Y ^206, Z ²⁰¹ is an aryl group having 6 to 20 carbon atoms are preferable optionally substituted by Z ^202, a phenyl group which may be substituted with Z ²⁰² Is more preferred and not present (ie, unsubstituted).
Further, Z ²⁰² is preferably an alkyl group having 1 to 20 carbon atoms that may be substituted with Z ^201, more preferably an alkyl group having 1 to 10 carbon atoms optionally substituted by Z ^201, with Z ²⁰¹ An alkyl group having 1 to 8 carbon atoms that may be substituted is even more preferable, and an alkyl group having 1 to 6 carbon atoms that may be substituted with ^Z201 is more preferable, and is not present (that is, unsubstituted). Is optimal).
Z ²⁰³ is preferably a halogen atom, more preferably fluorine, and most preferably not (ie, unsubstituted).

Hereinafter, specific examples of aniline derivatives suitable as other charge transport materials in the present invention will be given, but the present invention is not limited thereto.

  On the other hand, examples of other substances that serve as dopants include benzenesulfonic acid, tosylic acid, p-styrenesulfonic acid, 2-naphthalenesulfonic acid, 4-hydroxybenzenesulfonic acid, 5-sulfosalicylic acid, and p-dodecylbenzenesulfonic acid. , Dihexylbenzenesulfonic acid, 2,5-dihexylbenzenesulfonic acid, dibutylnaphthalenesulfonic acid, 6,7-dibutyl-2-naphthalenesulfonic acid, dodecylnaphthalenesulfonic acid, 3-dodecyl-2-naphthalenesulfonic acid, hexylnaphthalenesulfone Acid, 4-hexyl-1-naphthalenesulfonic acid, octylnaphthalenesulfonic acid, 2-octyl-1-naphthalenesulfonic acid, hexylnaphthalenesulfonic acid, 7-hexyl-1-naphthalenesulfonic acid, 6-hexyl-2-naphthalene Sulfonic acid, dinonylnaphthalenesulfonic acid, 2,7-dinonyl-4-naphthalenesulfonic acid, dinonylnaphthalenedisulfonic acid, 2,7-dinonyl-4,5-naphthalenedisulfonic acid, described in International Publication No. 2005/000832 1,4-benzodioxane disulfonic acid compound, aryl sulfonic acid compound described in WO 2006/025342, aryl sulfonic acid compound described in WO 2009/096352, polystyrene sulfonic acid Non-aryl sulfone compounds such as 10-camphorsulfonic acid; 7,7,8,8-tetracyanoquinodimethane (TCNQ), 2,3-dichloro-5,6-dicyano-1,4 -Organic oxidants such as benzoquinone (DDQ).

  In particular, as the other dopant, an aryl sulfonic acid compound is preferable, and considering the solubility in an organic solvent, the molecular weight is preferably 3,000 or less, more preferably 2,000 or less, and still more preferably 1,000. It is as follows.

Among these, examples of the aryl sulfonic acid compound that can be suitably used as another substance serving as a dopant include those represented by the formula (7) or (8).

In formula (7), A ¹ represents —O— or —S—, and —O— is preferable. A ² represents a naphthalene ring or an anthracene ring, and a naphthalene ring is preferable. A ³ represents a divalent to tetravalent perfluorobiphenyl group, j represents the number of bonds between A ¹ and A ^3, and is an integer satisfying 2 ≦ j ≦ 4, and A ³ is a divalent perfluorobiphenyl group. A group, preferably perfluorobiphenyl-4,4-diyl, and j is preferably 2. m represents the number of sulfonic acid groups bonded to A ² , and is an integer satisfying 1 ≦ m ≦ 4, but 2 is preferable.

In formula (8), A ^{4 to} A ⁸ are each independently a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a halogenated alkyl group having 1 to 20 carbon atoms, or 2 to 20 carbon atoms. Wherein at least three of A ^{4 to} A ⁸ are halogen atoms. k represents the number of sulfonic acid groups bonded to the naphthalene ring, and is an integer satisfying 1 ≦ k ≦ 4, preferably 2 to 4, and more preferably 2.

  Examples of the halogenated alkyl group having 1 to 20 carbon atoms include trifluoromethyl group, 2,2,2-trifluoroethyl group, 1,1,2,2,2-pentafluoroethyl group, 3,3,3- Trifluoropropyl group, 2,2,3,3,3-pentafluoropropyl group, 1,1,2,2,3,3,3-heptafluoropropyl group, 4,4,4-trifluorobutyl group, 3,3,4,4,4-pentafluorobutyl group, 2,2,3,3,4,4,4-heptafluorobutyl group, 1,1,2,2,3,3,4,4, 4-nonafluorobutyl group etc. are mentioned. Examples of the halogenated alkenyl group having 2 to 20 carbon atoms include a perfluorovinyl group, a 1-perfluoropropenyl group, a perfluoroallyl group, and a perfluorobutenyl group.

  Examples of the halogen atom and the alkyl group having 1 to 20 carbon atoms include the same ones as described above, and the halogen atom is preferably a fluorine atom.

Among these, A ⁴ to A ⁸ represents a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 10 carbon atoms, a halogenated alkyl group or a halogenated alkenyl group having 2 to 10 carbon atoms having 1 to 10 carbon atoms And at least three of A ^{4 to} A ⁸ are preferably fluorine atoms, a hydrogen atom, a fluorine atom, a cyano group, an alkyl group having 1 to 5 carbon atoms, and a fluorinated alkyl having 1 to 5 carbon atoms. Or a alkenyl fluoride group having 2 to 5 carbon atoms, and at least three of A ^{4 to} A ⁸ are preferably fluorine atoms, a hydrogen atom, a fluorine atom, a cyano group, or 1 to 5 carbon atoms. And a perfluoroalkenyl group having 1 to 5 carbon atoms, and A ⁴ , A ⁵ and A ⁸ are more preferably fluorine atoms.

  The perfluoroalkyl group is a group in which all hydrogen atoms of the alkyl group are substituted with fluorine atoms, and the perfluoroalkenyl group is a group in which all hydrogen atoms of the alkenyl group are substituted with fluorine atoms.

Specific examples of the aryl sulfonic acid compound suitable as a dopant in the present invention will be given, but the invention is not limited thereto.

[Charge transport materials]
The charge transporting material of the present invention contains a charge transporting material composed of a thiophene derivative represented by the formula (1) and a dopant. Such a charge transporting material exhibits good solubility in an organic solvent, and as described above, the charge transporting varnish can be easily produced by dissolving the charge transporting material in an organic solvent. it can.

[Charge transport thin film]
A charge transporting thin film can be formed on a base material by applying the charge transporting varnish of the present invention on the base material and baking it.

  The method for applying the varnish is not particularly limited, and examples thereof include a dipping method, a spin coating method, a transfer printing method, a roll coating method, a brush coating, an ink jet method, and a spray method. It is preferable to adjust the viscosity and the surface tension.

  Further, when the varnish of the present invention is used, the firing atmosphere is not particularly limited, and a thin film having a uniform film formation surface and a high charge transport property not only in the air atmosphere but also in an inert gas such as nitrogen or in a vacuum. Can be obtained.

  The firing temperature is appropriately set within a range of about 100 to 260 ° C. in consideration of the use of the obtained thin film, the degree of charge transportability imparted to the obtained thin film, and the like. When used as a hole injection layer of an EL element, about 140 to 250 ° C is preferable, and about 145 to 240 ° C is more preferable.

  One of the characteristics of the varnish of the present invention is that it can be fired at a low temperature of less than 200 ° C. Even a thin film produced under such a firing condition has high flatness and high charge transportability.

  In firing, two or more steps of temperature change may be applied for the purpose of expressing higher uniform film forming property or allowing the reaction to proceed on the substrate. The heating may be performed using an appropriate device such as a hot plate or an oven.

  The thickness of the charge transporting thin film is not particularly limited, but is preferably 5 to 200 nm when used as a hole injection layer in an organic EL device. As a method of changing the film thickness, there are methods such as changing the solid content concentration in the varnish and changing the amount of the solution on the substrate during coating.

[Organic EL device]
Examples of materials used and methods for producing an OLED element using the charge transporting varnish of the present invention include, but are not limited to, the following.

  The electrode substrate to be used is preferably cleaned in advance by cleaning with a liquid such as a detergent, alcohol, or pure water. For example, the anode substrate is subjected to surface treatment such as UV ozone treatment or oxygen-plasma treatment immediately before use. It is preferable. However, when the anode material is mainly composed of an organic material, the surface treatment may not be performed.

  The example of the manufacturing method of the OLED element which has a positive hole injection layer which consists of a thin film obtained from the charge transportable varnish of this invention is as follows.

  By the above method, the charge transporting varnish of the present invention is applied onto the anode substrate and baked to produce a hole injection layer on the electrode. This is introduced into a vacuum deposition apparatus, and a hole transport layer, a light emitting layer, an electron transport layer, an electron transport layer / hole block layer, an electron injection layer, and a cathode metal are sequentially deposited to form an OLED element. If necessary, an electron blocking layer may be provided between the light emitting layer and the hole transport layer.

  Examples of the anode material include transparent electrodes typified by indium tin oxide (ITO) and indium zinc oxide (IZO), metal anodes typified by aluminum, alloys thereof, and the like. What performed the chemical conversion process is preferable. Polythiophene derivatives and polyaniline derivatives having high charge transporting properties can also be used.

  Other metals constituting the metal anode include scandium, titanium, vanadium, chromium, manganese, iron, cobalt, nickel, copper, zinc, gallium, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, cadmium. , Indium, scandium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, hafnium, thallium, tungsten, rhenium, osmium, iridium, platinum, gold, titanium Lead, bismuth, and alloys thereof, but are not limited thereto.

As a material for forming the hole transport layer, (triphenylamine) dimer derivative, [(triphenylamine) dimer] spiro dimer, N, N′-bis (naphthalen-1-yl) -N, N′-bis (Phenyl) -benzidine (α-NPD), N, N′-bis (naphthalen-2-yl) -N, N′-bis (phenyl) -benzidine, N, N′-bis (3-methylphenyl)- N, N′-bis (phenyl) -benzidine, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -9,9-spirobifluorene, N, N′-bis ( Naphthalen-1-yl) -N, N′-bis (phenyl) -9,9-spirobifluorene, N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -9, 9-Dimethyl-fluorene, N, N′-bis (naphthalen-1-yl) -N, N′-bis (phenyl) -9,9-dimethyl-fluorene N, N′-bis (3-methylphenyl) -N, N′-bis (phenyl) -9,9-diphenyl-fluorene, N, N′-bis (naphthalen-1-yl) -N, N ′ -Bis (phenyl) -9,9-diphenyl-fluorene, N, N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -2,2'-dimethylbenzidine, 2,2 ' , 7,7'-Tetrakis (N, N-diphenylamino) -9,9-spirobifluorene, 9,9-bis [4- (N, N-bis-biphenyl-4-yl-amino) phenyl]- 9H-fluorene, 9,9-bis [4- (N, N-bis-naphthalen-2-yl-amino) phenyl] -9H-fluorene, 9,9-bis [4- (N-naphthalen-1-yl) -N-phenylamino) -phenyl] -9H-fluorene, 2,2 ', 7,7'-tetrakis [N-naphthalenyl (phenyl) -amino] -9,9 Spirobifluorene, N, N′-bis (phenanthren-9-yl) -N, N′-bis (phenyl) -benzidine, 2,2′-bis [N, N-bis (biphenyl-4-yl) amino ] -9,9-spirobifluorene, 2,2′-bis (N, N-diphenylamino) -9,9-spirobifluorene, di- [4- (N, N-di (p-tolyl) amino] ) -Phenyl] cyclohexane, 2,2 ′, 7,7′-tetra (N, N-di (p-tolyl) amino) -9,9-spirobifluorene, N, N, N ′, N′-tetra -Naphthalen-2-yl-benzidine, N, N, N ', N'-tetra- (3-methylphenyl) -3,3'-dimethylbenzidine, N, N'-di (naphthalenyl) -N, N' -Di (naphthalen-2-yl) -benzidine, N, N, N ', N'-tetra (naphthalenyl) -benzidine, N, N'-di (naphthalen-2-yl) -N, N'-diphenyl Benzidine-1,4-diamine, N ^1, N ⁴ - diphenyl--N ^1, N ⁴ - di (m-tolyl) ^{benzene-1,4-diamine, N 2, N 2, N} 6, N 6 - tetraphenyl Naphthalene-2,6-diamine, tris (4- (quinolin-8-yl) phenyl) amine, 2,2′-bis (3- (N, N-di (p-tolyl) amino) phenyl) biphenyl, 4 , 4 ′, 4 ″ -tris [3-methylphenyl (phenyl) amino] triphenylamine (m-MTDATA), 4,4 ′, 4 ″ -tris [1-naphthyl (phenyl) amino] triphenylamine Triarylamines such as (1-TNATA), 5,5 ″ -bis- {4- [bis (4-methylphenyl) amino] phenyl} -2,2 ′: 5 ′, 2 ″ -terthiophene And oligothiophenes such as (BMA-3T).

As a material for forming the light emitting layer, tris (8-quinolinolato) aluminum (III) (Alq ₃ ), bis (8-quinolinolato) zinc (II) (Znq ₂ ), bis (2-methyl-8-quinolinolato)- 4- (p-phenylphenolate) aluminum (III) (BAlq), 4,4′-bis (2,2-diphenylvinyl) biphenyl, 9,10-di (naphthalen-2-yl) anthracene, 2-t -Butyl-9,10-di (naphthalen-2-yl) anthracene, 2,7-bis [9,9-di (4-methylphenyl) -fluoren-2-yl] -9,9-di (4- Methylphenyl) fluorene, 2-methyl-9,10-bis (naphthalen-2-yl) anthracene, 2- (9,9-spirobifluoren-2-yl) -9,9-spirobifluorene, 2,7 -Bis (9,9-spirobifluoren-2-yl) -9,9 Spirobifluorene, 2- [9,9-di (4-methylphenyl) -fluoren-2-yl] -9,9-di (4-methylphenyl) fluorene, 2,2'-dipyrenyl-9,9- Spirobifluorene, 1,3,5-tris (pyren-1-yl) benzene, 9,9-bis [4- (pyrenyl) phenyl] -9H-fluorene, 2,2′-bi (9,10-diphenyl) Anthracene), 2,7-dipyrenyl-9,9-spirobifluorene, 1,4-di (pyren-1-yl) benzene, 1,3-di (pyren-1-yl) benzene, 6,13-di (Biphenyl-4-yl) pentacene, 3,9-di (naphthalen-2-yl) perylene, 3,10-di (naphthalen-2-yl) perylene, tris [4- (pyrenyl) -phenyl] amine, 10 , 10′-di (biphenyl-4-yl) -9,9′-bianthracene, N, N′-di (naphthalene) 1-yl) -N, N′-diphenyl- [1,1 ′: 4 ′, 1 ″: 4 ″, 1 ′ ″-quarterphenyl] -4,4 ′ ″-diamine, 4,4 '-Di [10- (naphthalen-1-yl) anthracen-9-yl] biphenyl, dibenzo {[f, f']-4,4 ', 7,7'-tetraphenyl} diindeno [1,2,3 -Cd: 1 ', 2', 3'-lm] perylene, 1- (7- (9,9'-bianthracen-10-yl) -9,9-dimethyl-9H-fluoren-2-yl) pyrene 1- (7- (9,9′-bianthracen-10-yl) -9,9-dihexyl-9H-fluoren-2-yl) pyrene, 1,3-bis (carbazol-9-yl) benzene, 1,3,5-tris (carbazol-9-yl) benzene, 4,4 ′, 4 ″ -tris (carbazol-9-yl) triphenylamine, 4,4′-bis (carbazol-9-yl) Biphenyl (CBP) 4,4′-bis (carbazol-9-yl) -2,2′-dimethylbiphenyl, 2,7-bis (carbazol-9-yl) -9,9-dimethylfluorene, 2,2 ′, 7,7 '-Tetrakis (carbazol-9-yl) -9,9-spirobifluorene, 2,7-bis (carbazol-9-yl) -9,9-di (p-tolyl) fluorene, 9,9-bis [ 4- (carbazol-9-yl) -phenyl] fluorene, 2,7-bis (carbazol-9-yl) -9,9-spirobifluorene, 1,4-bis (triphenylsilyl) benzene, 1,3 -Bis (triphenylsilyl) benzene, bis (4-N, N-diethylamino-2-methylphenyl) -4-methylphenylmethane, 2,7-bis (carbazol-9-yl) -9,9-dioctylfluorene 4,4 ''-di (triphenylsilyl) -p-terphenyl 4,4'-di (triphenylsilyl) biphenyl, 9- (4-t-butylphenyl) -3,6-bis (triphenylsilyl) -9H-carbazole, 9- (4-t-butylphenyl)- 3,6-ditrityl-9H-carbazole, 9- (4-t-butylphenyl) -3,6-bis (9- (4-methoxyphenyl) -9H-fluoren-9-yl) -9H-carbazole, 2 , 6-bis (3- (9H-carbazol-9-yl) phenyl) pyridine, triphenyl (4- (9-phenyl-9H-fluoren-9-yl) phenyl) silane, 9,9-dimethyl-N, N-diphenyl-7- (4- (1-phenyl-1H-benzo [d] imidazol-2-yl) phenyl) -9H-fluoren-2-amine, 3,5-bis (3- (9H-carbazole- 9-yl) phenyl) pyridine, 9,9-spirobifluo Len-2-yl-diphenyl-phosphine oxide, 9,9 '-(5- (triphenylsilyl) -1,3-phenylene) bis (9H-carbazole), 3- (2,7-bis (diphenylphosphoryl) -9-phenyl-9H-fluoren-9-yl) -9-phenyl-9H-carbazole, 4,4,8,8,12,12-hexa (p-tolyl) -4H-8H-12H-12C-azadibenzo [cd, mn] pyrene, 4,7-di (9H-carbazol-9-yl) -1,10-phenanthroline, 2,2′-bis (4- (carbazol-9-yl) phenyl) biphenyl, 2, 8-bis (diphenylphosphoryl) dibenzo [b, d] thiophene, bis (2-methylphenyl) diphenylsilane, bis [3,5-di (9H-carbazol-9-yl) phenyl] diphenylsilane, 3,6- Bis (carbazole-9-a ) -9- (2-ethyl-hexyl) -9H-carbazole, 3- (diphenylphosphoryl) -9- (4- (diphenylphosphoryl) phenyl) -9H-carbazole, 3,6-bis [(3,5 -Diphenyl) phenyl] -9-phenylcarbazole and the like, and a light-emitting layer may be formed by co-evaporation with a light-emitting dopant.

As the luminescent dopant, 3- (2-benzothiazolyl) -7- (diethylamino) coumarin, 2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H, 5H, 11H-10- (2-Benzothiazolyl) quinolidino [9,9a, 1gh] coumarin, quinacridone, N, N′-dimethyl-quinacridone, tris (2-phenylpyridine) iridium (III) (Ir (ppy) ₃ ), bis (2-phenyl) Pyridine) (acetylacetonate) iridium (III) (Ir (ppy) ₂ (acac)), tris [2- (p-tolyl) pyridine] iridium (III) (Ir (mppy) ₃ ), 9,10-bis [N, N-di (p-tolyl) amino] anthracene, 9,10-bis [phenyl (m-tolyl) amino] anthracene, bis [2- (2-hydroxyphenyl) benzothiazolato] zinc (II), N ¹⁰ , N ¹⁰ , N ¹⁰ , N ¹⁰ -tetra (p-tolyl) -9,9′-bian Tracene-10,10′-diamine, N ¹⁰ , N ¹⁰ , N ¹⁰ , N ¹⁰ -tetraphenyl-9,9′-bianthracene-10,10′-diamine, N ¹⁰ , N ¹⁰ -diphenyl-N ¹⁰ , N ¹⁰ -Dinaphthalenyl-9,9′-bianthracene-10,10′-diamine, 4,4′-bis (9-ethyl-3-carbazovinylene) -1,1′-biphenyl, perylene, 2,5,8 , 11-Tetra-t-butylperylene, 1,4-bis [2- (3-N-ethylcarbazolyl) vinyl] benzene, 4,4′-bis [4- (di-p-tolylamino) styryl] Biphenyl, 4- (di-p-tolylamino) -4 '-[(di-p-tolylamino) styryl] stilbene, bis [3,5-difluoro-2- (2-pyridyl) phenyl- (2-carboxypyridyl) Iridium (III), 4,4′-bis [4- (diphenylamino) styryl] biphenyl, (2,4-difluorophenylpyridinato) tetrakis (1-pyrazolyl) borateiridium (III), N, N′-bis (naphthalen-2-yl) -N, N′-bis (phenyl) -tris ( 9,9-dimethylfluorenylene), 2,7-bis {2- [phenyl (m-tolyl) amino] -9,9-dimethyl-fluoren-7-yl} -9,9-dimethyl-fluorene, N -(4-((E) -2- (6 ((E) -4- (diphenylamino) styryl) naphthalen-2-yl) vinyl) phenyl) -N-phenylbenzenamine, fac-iridium (III) tris (1-phenyl-3-methylbenzamide 2-ylidene -C, C ^2), mer- iridium (III) tris (1-phenyl-3-methylbenzamide 2-ylidene -C, C ^{2), 2} , 7-bis [4- (diphenylamino) styryl] -9,9-spirobi Fluorene, 6-methyl-2- (4- (9- (4- (6-methylbenzo [d] thiazol-2-yl) phenyl) anthracen-10-yl) phenyl) benzo [d] thiazole, 1,4- Di [4- (N, N-diphenyl) amino] styrylbenzene, 1,4-bis (4- (9H-carbazol-9-yl) styryl) benzene, (E) -6- (4- (diphenylamino) Styryl) -N, N-diphenylnaphthalen-2-amine, bis (2,4-difluorophenylpyridinato) (5- (pyridin-2-yl) -1H-tetrazolate) iridium (III), bis (3- Trifluoromethyl-5- (2-pyridyl) pyrazole) ((2,4-difluorobenzyl) diphenylphosphinate) iridium (III), bis (3-trifluoromethyl-5- (2-pyridyl) pyrazolate) (benzyl Diphenylphosphinate) Lidium (III), bis (1- (2,4-difluorobenzyl) -3-methylbenzimidazolium) (3- (trifluoromethyl) -5- (2-pyridyl) -1,2,4-triazolate) Iridium (III), bis (3-trifluoromethyl-5- (2-pyridyl) pyrazolate) (4 ′, 6′-difluorophenylpyridinate) iridium (III), bis (4 ′, 6′-difluorophenyl) Pyridinato) (3,5-bis (trifluoromethyl) -2- (2'-pyridyl) pyrrolate) iridium (III), bis (4 ', 6'-difluorophenylpyridinato) (3- (tri Fluoromethyl) -5- (2-pyridyl) -1,2,4-triazolate) iridium (III), (Z) -6-mesityl-N- (6-mesitylquinoline-2 (1H) -ylidene) quinoline 2-amine _{-BF 2, (E) -2- (} 2- (4- ( dimethylamino) styryl) -6- Til-4H-pyran-4-ylidene) malononitrile, 4- (dicyanomethylene) -2-methyl-6-julolidyl-9-enyl-4H-pyran, 4- (dicyanomethylene) -2-methyl-6- (1 , 1,7,7-Tetramethyljulolidyl-9-enyl) -4H-pyran, 4- (dicyanomethylene) -2-tert-butyl-6- (1,1,7,7-tetramethyljulolidine -4-yl-vinyl) -4H-pyran, tris (dibenzoylmethane) phenanthroline europium (III), 5,6,11,12-tetraphenylnaphthacene, bis (2-benzo [b] thiophen-2-yl -Pyridine) (acetylacetonate) iridium (III), tris (1-phenylisoquinoline) iridium (III), bis (1-phenylisoquinoline) (acetylacetonate) iridium (III), bis [1- (9,9 - Til-9H-fluoren-2-yl) -isoquinoline] (acetylacetonate) iridium (III), bis [2- (9,9-dimethyl-9H-fluoren-2-yl) quinoline] (acetylacetonate) iridium (III), tris [4,4′-di-t-butyl- (2,2 ′)-bipyridine] ruthenium (III) bis (hexafluorophosphate), tris (2-phenylquinoline) iridium (III), Bis (2-phenylquinoline) (acetylacetonate) iridium (III), 2,8-di-t-butyl-5,11-bis (4-t-butylphenyl) -6,12-diphenyltetracene, bis ( 2-Phenylbenzothiazolate) (acetylacetonate) iridium (III), 5,10,15,20-tetraphenyltetrabenzoporphyrin platinum, osmium (II) bis (3-trifluoromethyl-5- (2- Pyridine ) -Pyrazolate) dimethylphenylphosphine, osmium (II) bis (3- (trifluoromethyl) -5- (4-tert-butylpyridyl) -1,2,4-triazolate) diphenylmethylphosphine, osmium (II) bis (3- (trifluoromethyl) -5- (2-pyridyl) -1,2,4-triazole) dimethylphenylphosphine, osmium (II) bis (3- (trifluoromethyl) -5- (4-t- Butylpyridyl) -1,2,4-triazolate) dimethylphenylphosphine, bis [2- (4-n-hexylphenyl) quinoline] (acetylacetonate) iridium (III), tris [2- (4-n-hexyl) Phenyl) quinoline] iridium (III), tris [2-phenyl-4-methylquinoline] iridium (III), bis (2-phenylquinoline) (2- (3-methylphenyl) pyridinate) irid (III), bis (2- (9,9-diethyl-fluoren-2-yl) -1-phenyl-1H-benzo [d] imidazolato) (acetylacetonate) iridium (III), bis (2-phenyl) Pyridine) (3- (pyridin-2-yl) -2H-chromen-2-onate) iridium (III), bis (2-phenylquinoline) (2,2,6,6-tetramethylheptane-3,5- Diate) iridium (III), bis (phenylisoquinoline) (2,2,6,6-tetramethylheptane-3,5-dionate) iridium (III), iridium (III) bis (4-phenylthieno [3,2 -c] pyridinato -N, C ²⁾ acetylacetonate, (E) -2- (2- t- butyl-6- (2- (2,6,6-trimethyl-2,4,5,6-tetrahydro -1H-pyrrolo [3,2,1-ij] quinolin-8-yl) vinyl) -4H-pyran-4-ylide ) Malononitrile, bis (3-trifluoromethyl-5- (1-isoquinolyl) pyrazolate) (methyldiphenylphosphine) ruthenium, bis [(4-n-hexylphenyl) isoquinoline] (acetylacetonate) iridium (III), platinum (II) octaethylporphine, bis (2-methyldibenzo [f, h] quinoxaline) (acetylacetonate) iridium (III), tris [(4-n-hexylphenyl) xoquinoline] iridium (III), etc. .

  As a material for forming the electron transport layer / hole blocking layer, 8-hydroxyquinolinolate-lithium, 2,2 ′, 2 ″-(1,3,5-benztolyl) -tris (1-phenyl-1 -H-benzimidazole), 2- (4-biphenyl) 5- (4-t-butylphenyl) -1,3,4-oxadiazole, 2,9-dimethyl-4,7-diphenyl-1,10 -Phenanthroline, 4,7-diphenyl-1,10-phenanthroline, bis (2-methyl-8-quinolinolate) -4- (phenylphenolato) aluminum, 1,3-bis [2- (2,2'-bipyridine) -6-yl) -1,3,4-oxadiazo-5-yl] benzene, 6,6′-bis [5- (biphenyl-4-yl) -1,3,4-oxadiazo-2-yl]- 2,2'-bipyridine, 3- (4-biphenyl) -4-phenyl-5-t-butyl Phenyl-1,2,4-triazole, 4- (naphthalen-1-yl) -3,5-diphenyl-4H-1,2,4-triazole, 2,9-bis (naphthalen-2-yl) -4 , 7-Diphenyl-1,10-phenanthroline, 2,7-bis [2- (2,2′-bipyridin-6-yl) -1,3,4-oxadiazo-5-yl] -9,9-dimethyl Fluorene, 1,3-bis [2- (4-t-butylphenyl) -1,3,4-oxadiazo-5-yl] benzene, tris (2,4,6-trimethyl-3- (pyridine-3- Yl) phenyl) borane, 1-methyl-2- (4- (naphthalen-2-yl) phenyl) -1H-imidazo [4,5f] [1,10] phenanthroline, 2- (naphthalen-2-yl)- 4,7-diphenyl-1,10-phenanthroline, phenyl-dipyrenylphosphine oxide, 3,3 ′ , 5,5′-Tetra [(m-pyridyl) -phen-3-yl] biphenyl, 1,3,5-tris [(3-pyridyl) -phen-3-yl] benzene, 4,4′-bis (4,6-diphenyl-1,3,5-triazin-2-yl) biphenyl, 1,3-bis [3,5-di (pyridin-3-yl) phenyl] benzene, bis (10-hydroxybenzo [ h] quinolinato) beryllium, diphenylbis (4- (pyridin-3-yl) phenyl) silane, 3,5-di (pyren-1-yl) pyridine and the like.

Materials for forming the electron injection layer include lithium oxide (Li ₂ O), magnesium oxide (MgO), alumina (Al ₂ O ₃ ), lithium fluoride (LiF), sodium fluoride (NaF), magnesium fluoride ( MgF ₂ ), cesium fluoride (CsF), strontium fluoride (SrF ₂ ), molybdenum trioxide (MoO ₃ ), aluminum, Li (acac), lithium acetate, lithium benzoate and the like.

  Examples of the cathode material include aluminum, magnesium-silver alloy, aluminum-lithium alloy, lithium, sodium, potassium, cesium and the like.

  Examples of the material for forming the electron blocking layer include tris (phenylpyrazole) iridium.

  Although the manufacturing method of the PLED element using the charge transportable varnish of this invention is not specifically limited, The following methods are mentioned.

  In the preparation of the OLED element, instead of performing the vacuum deposition operation of the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer, the hole transport polymer layer and the light emitting polymer layer are sequentially formed. A PLED element having a charge transporting thin film formed by the charge transporting varnish of the invention can be produced.

  Specifically, the charge transporting varnish of the present invention is applied on the anode substrate to prepare a hole injection layer by the above method, and a hole transporting polymer layer and a light emitting polymer layer are sequentially formed thereon. Then, a cathode electrode is vapor-deposited to obtain a PLED element.

  As the cathode and anode material to be used, the same materials as those used in the production of the OLED element can be used, and the same cleaning treatment and surface treatment can be performed.

  As a method for forming the hole transporting polymer layer and the light emitting polymer layer, a hole transporting polymer material or a light emitting polymer material, or a material in which a dopant is added to these materials are added and dissolved, The method of forming into a film by disperse | distributing uniformly and apply | coating on a positive hole injection layer or a positive hole transportable polymer layer, and baking each is mentioned.

  As the hole transporting polymer material, poly [(9,9-dihexylfluorenyl-2,7-diyl) -co- (N, N′-bis {p-butylphenyl} -1,4-diamino Phenylene)], poly [(9,9-dioctylfluorenyl-2,7-diyl) -co- (N, N′-bis {p-butylphenyl} -1,1′-biphenylene-4,4- Diamine)], poly [(9,9-bis {1'-penten-5'-yl} fluorenyl-2,7-diyl) -co- (N, N'-bis {p-butylphenyl} -1, 4-diaminophenylene)], poly [N, N′-bis (4-butylphenyl) -N, N′-bis (phenyl) -benzidine] -endcapped with polysilsesquioxane, poly [(9, 9-didioctylfluorenyl-2,7-diyl) -co- (4,4 ′-(N- (p-butylphenyl)) diphenylamine)] and the like.

  Examples of the light emitting polymer material include polyfluorene derivatives such as poly (9,9-dialkylfluorene) (PDAF), poly (2-methoxy-5- (2′-ethylhexoxy) -1,4-phenylenevinylene) (MEH). -PPV) and the like, polythiophene derivatives such as poly (3-alkylthiophene) (PAT), and polyvinylcarbazole (PVCz).

  Examples of the solvent include toluene, xylene, chloroform and the like. Examples of the dissolution or uniform dispersion method include methods such as stirring, heating and stirring, and ultrasonic dispersion.

  The application method is not particularly limited, and examples thereof include an inkjet method, a spray method, a dipping method, a spin coating method, a transfer printing method, a roll coating method, and a brush coating method. The application is preferably performed under an inert gas such as nitrogen or argon.

  Examples of the firing method include a method of heating in an oven or a hot plate under an inert gas or in a vacuum.

EXAMPLES Hereinafter, although a synthesis example and an Example are given and this invention is demonstrated more concretely, this invention is not limited to the following Example. In addition, the apparatus used is as follows.
(1) Substrate cleaning: Choshu Sangyo Co., Ltd. substrate cleaning equipment (decompressed plasma method)
(2) Varnish application: Mikasa Co., Ltd. spin coater MS-A100
(3) Film thickness measurement: Kosaka Laboratory Co., Ltd. Fine shape measuring machine Surfcorder ET-4000
(4) Production of EL element: Choshu Sangyo Co., Ltd. Multifunctional deposition system C-E2L1G1-N
(5) Measurement of luminance of EL element: (Yes) Tech World IVL measurement system (6) EL element lifetime measurement (durability test): Organic EL luminance lifetime evaluation system PEL- 105S
(7) NMR measurement: JNM-ECX300 FT NMR SYSTEM manufactured by JEOL Ltd.
(8) MS measurement: Bruker autoflex III smartbem

Synthesis Example 1 Synthesis of Thiophene Derivative 1 (Formula (1-1)) Based on the following reaction formula, thiophene derivative 1 was synthesized.

Thienothiophene (manufactured by Tokyo Chemical Industry Co., Ltd.) (2.00 g) and dimethylformamide (DMF) (30 mL) were placed in a reaction vessel and stirred at room temperature to confirm dissolution. 4 eq) was charged as powder. After confirming disappearance of the raw materials, n-hexane and ion-exchanged water were added to the reaction solution to carry out liquid separation. The organic layer was washed once with ion-exchanged water and saturated brine, and then dried over Na ₂ SO ₄ . The solvent was distilled off under reduced pressure and dried to obtain 4.21 g of the desired thienothiophene dibromo compound (yield 99%).
Next, under a nitrogen atmosphere, 1.93 g of thienothiophene dibromo compound, 0.75 g (10 mol%) of Pd (PPh ₃ ) ₄ , 4.00 g of 3-hexylthiopheneboronic acid pinacol ester (manufactured by Aldrich), dimethoxyethane (DME) 43 mL and 16.2 mL (5 eq) of ₂ mol / L K ₂ CO ₃ aqueous solution were added, and the reaction was allowed to stir for 5 hours under heating and refluxing conditions. After completion of the reaction, n-hexane was added, and the mixture was stirred at room temperature for 30 minutes. Insoluble matters were removed by filtration, and the filtrate was washed twice with ion-exchanged water and once with saturated brine. After drying over Na ₂ SO ₄ , the solvent was distilled off under reduced pressure, and the residue was separated and purified by column chromatography to obtain the desired thiophene derivative 1 (yield 85%). The measurement result of ¹ H-NMR is shown below.
¹ H-NMR (300MHz, CDCl ₃ ) δ [ppm]: 7.24 (s, 2H), 7.21 (d, J = 5.1Hz, 2H), 6.96 (d, J = 5.3Hz, 2H), 2.79 (t, J = 7.4Hz, 4H), 1.60-1.70 (m, 4H), 1.27-1.42 (m, 12H), 0.88 (t, J = 6.9Hz, 6H).

Synthesis Example 2 Synthesis of Thiophene Derivative 2 (Formula (1-2)) Based on the following reaction formula, thiophene derivative 2 was synthesized.

Under a nitrogen atmosphere, 1.50 g of benzodithiophene (manufactured by Tokyo Chemical Industry Co., Ltd.) was placed in a reaction vessel, 50 mL of tetrahydrofuran (THF) was added, and then cooled to -78 ° C. Thereto, 19.2 mL of n-butyllithium n-hexane solution (concentration 1.64 mol / L, 4 eq) was added dropwise, followed by stirring for 1.5 hours. Further, 8.6 mL (4 eq) of tri-n-butylchlorostannane was added dropwise thereto, and after further reaction at −78 ° C. for 1 hour, the cooling bath was removed and the temperature was raised to room temperature. After reaching room temperature, the solvent was distilled off under reduced pressure, and the precipitate in the resulting slurry was filtered and dried to obtain 11.84 g of a mixture containing the desired benzodithiophene bisstannyl compound. Further purification is not performed, and the yield is calculated as 100% (theoretical yield: 6.07 g), and the purity is calculated (6.07 / 11.84 × 100 = 51.3%). Used as raw material.
Subsequently, under a nitrogen atmosphere, 5.92 g of the mixture containing the obtained benzodithiophene bisstannyl compound, 2.15 g (2.2 eq) of 2-bromo-3-n-hexylthiophene (manufactured by Tokyo Chemical Industry Co., Ltd.) , 25 mL of toluene and 0.230 g (5 mol%) of Pd (PPh ₃ ) ₄ were placed in a reaction vessel and stirred for 4.5 hours under heating and refluxing conditions. After allowing to cool to room temperature, chloroform and ion-exchanged water were added for liquid separation. The solvent of the obtained organic layer was distilled off under reduced pressure, methanol was added to the obtained yellow slurry, and insoluble matter was filtered off. The filtrate was subjected to activated carbon treatment, the solvent was distilled off under reduced pressure, ethanol and toluene were added to the residue, and the mixture was stirred under heating under reflux. After confirming complete dissolution, the mixture was allowed to cool to room temperature. After stirring overnight at room temperature, the mixture was collected by filtration and dried to obtain 1.40 g of the desired thiophene derivative 2 (two-stage yield 68%). The measurement results of ¹ H-NMR and TOF-MS are shown below.
¹ H-NMR (300 MHz, CDCl ₃ ) δ [ppm]: 8.16 (s, 2H), 7.34 (s, 2H), 7.26 (d, J = 5.1Hz, 2H), 6.98 (d, J = 5.1Hz. 2H) 2.87 (t, J = 8.0Hz, 4H), 1.63-1.74 (m, 4H), 1.30-1.42 (m, 12H), 0.88 (t, J = 6.6Hz, 6H).
MALDI-TOF-MS m / Z found: 521.87 ([M] ⁺ calcd: 522.15)

[Example 1-1]
Thiophene derivative 1 0.034 g, phosphotungstic acid (PTA, manufactured by Kanto Chemical Co., Ltd.) 0.17 g and F4TCNQ (manufactured by Tokyo Chemical Industry Co., Ltd.) 0.020 g in 1,3-dimethyl- It was dissolved in 2 g of 2-imidazolidinone (DMI). To the obtained solution, 1 g of diethylene glycol monomethyl ether (DEGME) and 7 g of propylene glycol monoethyl ether (PGME) were added and stirred, and 0.007 g of trifluoropropyltrimethoxysilane and 0.014 g of phenyltrimethoxysilane were added thereto. Stirring to prepare a charge transporting varnish.

[Example 1-2]
Thiophene derivative 2 0.034 g, PTA 0.17 g and F4TCNQ 0.031 g were dissolved in 2 g of DMI under nitrogen atmosphere. To the resulting solution, 1 g of DEGME and 7 g of PGME were added and stirred, and 0.007 g of trifluoropropyltrimethoxysilane and 0.014 g of phenyltrimethoxysilane were added and stirred to prepare a charge transporting varnish.

[Example 1-3]
0.034 g of thiophene derivative 1 and 0.17 g of PTA were dissolved in 2 g of DMI under a nitrogen atmosphere. 1 g of DEGME and 7 g of PGME were added to the resulting solution and stirred to prepare a charge transporting varnish.
[Example 1-4]

  0.034 g of thiophene derivative 1 and 0.17 g of PTA were dissolved in 2 g of DMI under a nitrogen atmosphere. To the resulting solution, 1 g of DEGME and 7 g of PGME were added and stirred, and 0.007 g of trifluoropropyltrimethoxysilane and 0.014 g of phenyltrimethoxysilane were added and stirred to prepare a charge transporting varnish.

[Example 2-1]
The varnish obtained in Example 1-1 was applied to an ITO substrate using a spin coater, then dried at 50 ° C. for 5 minutes, and further baked at 160 ° C. for 10 minutes in an air atmosphere. A uniform thin film of 30 nm was formed. As the ITO substrate, a glass substrate of 25 mm × 25 mm × 0.7 t, in which indium tin oxide (ITO) is patterned on the surface with a film thickness of 150 nm, is used by an O ₂ plasma cleaning apparatus (150 W, 30 seconds) before use. Impurities on the surface were removed.
Next, N, N′-di (1-naphthyl) -N, N′-diphenylbenzidine (α-) was applied to the ITO substrate on which the thin film was formed using a vapor deposition apparatus (vacuum degree 1.0 × 10 ⁻⁵ Pa). NPD), tris (8-quinolinolato) aluminum (III) (Alq ₃ ), lithium fluoride, and aluminum thin films were sequentially laminated to obtain an organic EL device. At this time, the deposition rate is 0.2 nm / second for α-NPD, Alq ₃ and aluminum, and 0.02 nm / second for lithium fluoride, and the film thickness is 30 nm, 40 nm, and 0.0 nm, respectively. It was 5 nm and 120 nm.
In addition, in order to prevent the characteristic deterioration by the influence of oxygen in the air, water, etc., after sealing the organic EL element with the sealing substrate, the characteristic was evaluated. Sealing was performed according to the following procedure.
In a nitrogen atmosphere with an oxygen concentration of 2 ppm or less and a dew point of -85 ° C or less, the organic EL element is placed between the sealing substrates, and the sealing substrate is bonded with an adhesive (XNR5516Z-B1 manufactured by Nagase ChemteX Corporation). It was. At this time, a water catching agent (manufactured by Dynic Co., Ltd., HD-071010W-40) was placed in a sealing substrate together with the organic EL element.
The bonded sealing substrate was irradiated with UV light (wavelength: 365 nm, irradiation amount: 6,000 mJ / cm ² ), and then annealed at 80 ° C. for 1 hour to cure the adhesive.

[Examples 2-2 to 2-4]
An organic EL device was produced in the same manner as in Example 2-1, except that the varnish obtained in Examples 1-2 to 1-4 was used instead of the varnish obtained in Example 1-1. did.

  The current density and luminance at a driving voltage of 5 V of each element were measured. The results are shown in Table 1.

  As shown in Table 1, an organic EL device having excellent luminance characteristics could be realized by the varnish of the present invention.

The durability test of the element produced in Example 2-1 was performed. The luminance half-life (initial luminance 5,000 cd / m ² ) is shown in Table 2.

  As shown in Table 2, an organic EL device having excellent durability could be realized by the varnish of the present invention.

Claims (10)

A charge transporting varnish comprising a charge transporting material comprising a thiophene derivative represented by the formula (1), a dopant, and an organic solvent.

(In the formula, Ar represents the formulas (2-1) to (2-10).

A divalent group represented by any of the following:
R ^{1 to} R ³⁶ each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a carboxylic acid group, or a carbon number of 1 to 20 that may be substituted with Z ^1. alkyl group, Z ¹ in an optionally substituted alkenyl group having 2 to 20 carbon atoms, an alkynyl group which may C2-20 optionally substituted by Z ^1, the carbon may be substituted with Z ² Formula 6-20 aryl group, -C (O) Y ¹ group, -OY ² group, -SY ³ group, -C (O) OY ⁴ group, -OC (O) Y ⁵ group, -C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group is represented, and R ^{3 to} R ⁶ are alkyl groups, alkenyl groups, alkynyl groups, aryl groups, —C (O) Y ¹ groups, —OY ² groups, — In the case of SY ³ group, —C (O) OY ⁴ group, —OC (O) Y ⁵ group, —C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group, R ³ and R ⁴ And / Is R ⁵ and R ^6, may form a divalent group bonded to each other,
Y ¹ to Y ⁸ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^1, alkenyl group which may C2-20 optionally substituted by Z ^1, in Z ¹ Represents an optionally substituted alkynyl group having 2 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ² ;
Z ¹ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ³ ;
Z ² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group of Z ³ carbon atoms which may be substituted with 1 to 20, Z ³ Represents an alkenyl group having 2 to 20 carbon atoms which may be substituted with or an alkynyl group having 2 to 20 carbon atoms which may be substituted with Z ³ ;
Z ³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group. )   The charge transporting varnish according to claim 1, wherein the dopant contains a heteropolyacid.   The charge transporting varnish according to claim 1 or 2, further comprising an organosilane compound. Furthermore, the charge transportable varnish of any one of Claims 1-3 containing the tetracyano quinodimethane compound represented by following formula (5).

(In the formula, R ^{101 to} R ¹⁰⁴ each independently represents a hydrogen atom or a halogen atom, but at least one is a halogen atom.)   A charge transporting thin film produced using the charge transporting varnish according to claim 1.   An organic electroluminescence device comprising the charge transporting thin film according to claim 5.   The organic electroluminescence device according to claim 6, wherein the charge transporting thin film is a hole injection layer or a hole transport layer.   A method for producing a charge-transporting thin film, comprising applying the charge-transporting varnish according to any one of claims 1 to 4 onto a base material and baking.   A method for producing an organic electroluminescent device, comprising using the charge transporting thin film according to claim 5. A charge transport material comprising a charge transport material comprising a thiophene derivative represented by the formula (1) and a dopant.

(In the formula, Ar represents the formulas (2-1) to (2-10).

A divalent group represented by any of the following:
R ^{1 to} R ³⁶ each independently represent a hydrogen atom, a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a carboxylic acid group, or a carbon number of 1 to 20 that may be substituted with Z ^1. alkyl group, Z ¹ in an optionally substituted alkenyl group having 2 to 20 carbon atoms, an alkynyl group which may C2-20 optionally substituted by Z ^1, the carbon may be substituted with Z ² Formula 6-20 aryl group, -C (O) Y ¹ group, -OY ² group, -SY ³ group, -C (O) OY ⁴ group, -OC (O) Y ⁵ group, -C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group is represented, and R ^{3 to} R ⁶ are alkyl groups, alkenyl groups, alkynyl groups, aryl groups, —C (O) Y ¹ groups, —OY ² groups, — In the case of SY ³ group, —C (O) OY ⁴ group, —OC (O) Y ⁵ group, —C (O) NHY ⁶ group or —C (O) NY ⁷ Y ⁸ group, R ³ and R ⁴ And / Is R ⁵ and R ^6, may form a divalent group bonded to each other,
Y ¹ to Y ⁸ each independently represent an alkyl group having carbon atoms which may be have 1-20 substituted with Z ^1, alkenyl group which may C2-20 optionally substituted by Z ^1, in Z ¹ Represents an optionally substituted alkynyl group having 2 to 20 carbon atoms or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ² ;
Z ¹ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, a carboxylic acid group or an aryl group having 6 to 20 carbon atoms which may be substituted with Z ³ ;
Z ² is a halogen atom, a nitro group, a cyano group, an aldehyde group, hydroxy group, thiol group, sulfonic acid group, a carboxylic acid group, an alkyl group of Z ³ carbon atoms which may be substituted with 1 to 20, Z ³ Represents an alkenyl group having 2 to 20 carbon atoms which may be substituted with or an alkynyl group having 2 to 20 carbon atoms which may be substituted with Z ³ ;
Z ³ represents a halogen atom, a nitro group, a cyano group, an aldehyde group, a hydroxy group, a thiol group, a sulfonic acid group, or a carboxylic acid group. )