JP2015087480A - Display device and method for manufacturing the same - Google Patents

Display device and method for manufacturing the same Download PDF

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JP2015087480A
JP2015087480A JP2013224597A JP2013224597A JP2015087480A JP 2015087480 A JP2015087480 A JP 2015087480A JP 2013224597 A JP2013224597 A JP 2013224597A JP 2013224597 A JP2013224597 A JP 2013224597A JP 2015087480 A JP2015087480 A JP 2015087480A
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display device
wiring layer
curved
opening
region
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康克 觀田
Yasukatsu Kanda
康克 觀田
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Japan Display Inc
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Japan Display Inc
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Abstract

PROBLEM TO BE SOLVED: To solve such problems that with reduction in a frame width of a liquid crystal panel and with a higher definition, wiring density in a sealing region is further increased while UV light irradiation for temporary curing of a sealing material is insufficient, which induces cracks due to the pressure of a liquid crystal in an initial stage of full curing, and further induces reduction in a yield and reduction in reliability due to interruption in the sealing.SOLUTION: A display device is configured to have a curved reflection region or a scattering or refractive region in an end of a wide wiring line on an array substrate or in a slit-like opening in a wiring line, in a region interposed between a wiring layer of the array substrate and a light-shielding layer of a counter substrate.

Description

本開示は、表示装置に関し、例えばシール領域に配線が位置する表示装置に適用可能である。   The present disclosure relates to a display device and can be applied to, for example, a display device in which wiring is located in a seal region.

TFT基板とCF基板を貼り合せるシール領域において、幅の広い配線部分では、シール材料を仮硬化するための紫外線(UV)光が十分に照射されない、という問題があった。   In the sealing region where the TFT substrate and the CF substrate are bonded together, there is a problem that the wide wiring portion is not sufficiently irradiated with ultraviolet (UV) light for pre-curing the sealing material.

これに対して、シール領域の幅の広い配線には、スリットや穴などの開口部を設けて、シール材料にUV光を照射することにより、シールの仮硬化の効率を向上させていた。なお、シール材と電極線が交差する部分に開口部を有する液晶表示装置は、特開平11−85057号公報(特許文献1)に開示されている。   On the other hand, the wiring having a wide seal region is provided with openings such as slits and holes, and the seal material is irradiated with UV light to improve the efficiency of temporary curing of the seal. A liquid crystal display device having an opening at a portion where the sealing material and the electrode line intersect is disclosed in Japanese Patent Laid-Open No. 11-85057 (Patent Document 1).

特開平11−85057号公報JP-A-11-85057

液晶パネルの額縁幅が狭くなること、および、高精細化に伴い、シール領域の配線密度がさらに大きくなり、シール材料を仮硬化するUV光照射が不十分となり、熱での本硬化の初期段階で、液晶の圧力による差し込みが生じ、シール切れによる歩留り低下や信頼性低下を引き起こす。
本開示の課題は、シール材料に照射されるUV光を増加させる表示装置を提供することにある。
その他の課題と新規な特徴は、本開示の記述および添付図面から明らかになるであろう。
As the frame width of the liquid crystal panel becomes narrower and the definition becomes higher, the wiring density in the seal area becomes larger, the UV light irradiation for temporarily curing the seal material becomes insufficient, and the initial stage of the main curing with heat Therefore, insertion due to the pressure of the liquid crystal occurs, which causes a decrease in yield and reliability due to the seal being broken.
The subject of this indication is providing the display apparatus which increases the UV light irradiated to a sealing material.
Other problems and novel features will become apparent from the description of the present disclosure and the accompanying drawings.

本開示のうち、代表的なものの概要を簡単に説明すれば、下記のとおりである。
すなわち、表示装置は、アレイ基板の幅の広い配線の端部、あるいは、配線のスリット状の開口部において、アレイ基板の配線層と対抗基板の遮光層とにはさまれる領域に、曲面状の反射領域、あるいは、散乱、屈折領域を設ける。
The outline of a representative one of the present disclosure will be briefly described as follows.
That is, the display device has a curved surface in a region sandwiched between the wiring layer of the array substrate and the light shielding layer of the opposing substrate at the end of the wide wiring of the array substrate or the slit-shaped opening of the wiring. A reflective region or a scattering / refractive region is provided.

上記表示装置によれば、シール材料に照射されるUV光を増加することができる。   According to the display device, it is possible to increase the UV light applied to the sealing material.

表示装置の構成を示す平面図である。It is a top view which shows the structure of a display apparatus. 図1Aの一部を拡大した図であり、(a)は平面図、(b)は断面図である。It is the figure which expanded a part of FIG. 1A, (a) is a top view, (b) is sectional drawing. 比較例に係る表示装置のシール領域にUV光が十分に照射されないことを説明する図であり、(a)はシール領域の平面図、(b)はシール領域の断面図である。It is a figure explaining UV light not fully irradiated to the seal | sticker area | region of the display apparatus which concerns on a comparative example, (a) is a top view of a seal | sticker area | region, (b) is sectional drawing of a seal | sticker area | region. 実施の形態に係る表示装置のシール領域にUV光が十分に照射されることを説明する図であり、(a)はシール領域の平面図、(b)はシール領域の断面図である。It is a figure explaining UV light being fully irradiated to the seal | sticker area | region of the display apparatus which concerns on embodiment, (a) is a top view of a seal | sticker area | region, (b) is sectional drawing of a seal | sticker area | region. 実施例1に係る表示装置のシール領域を示す図であり、(a)は平面図、(b)は断面図である。It is a figure which shows the seal | sticker area | region of the display apparatus which concerns on Example 1, (a) is a top view, (b) is sectional drawing. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing the curved reflecting portion of the display device according to the first embodiment. FIG. 変形例1に係る表示装置のシール領域を示す図であり、(a)は平面図、(b)は断面図である。It is a figure which shows the seal | sticker area | region of the display apparatus which concerns on the modification 1, (a) is a top view, (b) is sectional drawing. 変形例2に係る表示装置のシール領域の平面図である。11 is a plan view of a seal area of a display device according to modification example 2. FIG. 変形例3に係る表示装置の曲面反射部の断面図である。14 is a cross-sectional view of a curved reflection portion of a display device according to Modification 3. FIG. 変形例4に係る表示装置の曲面反射部の断面図である。It is sectional drawing of the curved surface reflection part of the display apparatus which concerns on the modification 4. 実施例2に係る表示装置のシール領域を示す図であり、(a)は平面図、(b)は断面図である。It is a figure which shows the seal | sticker area | region of the display apparatus which concerns on Example 2, (a) is a top view, (b) is sectional drawing. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 実施例2に係る表示装置の散乱・屈折部を製造する方法を示す断面図である。6 is a cross-sectional view illustrating a method for manufacturing a scattering / refractive portion of a display device according to Example 2. FIG. 変形例5に係る表示装置のシール領域を示す図であり、(a)は平面図、(b)は断面図である。It is a figure which shows the seal | sticker area | region of the display apparatus which concerns on the modification 5, (a) is a top view, (b) is sectional drawing. 変形例6に係る表示装置のシール領域の平面図である。14 is a plan view of a seal area of a display device according to modification example 6. FIG.

以下、実施の形態、実施例および変形例について、図面を用いて説明する。ただし、以下の説明において、同一構成要素には同一符号を付し繰り返しの説明は省略する。
図1Aおよび図1Bを用いて、表示装置の外周の構成について説明する。
図1Aは表示装置の構成を示す平面図である。図1Bは図1Aの領域Bを拡大した図であり、(a)は平面図、(b)は(a)に示されるA−A’線における断面図である。
表示装置10はTFT基板11とCF基板12を備える。TFT基板11とCF基板12を貼り合せるシール材15は、内端15iと外端15oの間のシール領域15Aに位置する。シール材15はアクティブ領域13の外側に位置する。幅が広い配線14(配線領域14A)はシール領域15Aと重なり、アクティブ領域13の外側に位置する。配線領域14Aおよびシール領域15Aはアクティブ領域外端13oの外側に位置する。すなわち、配線14およびシール材15は最外周の遮光層BM16に覆われている。
Hereinafter, embodiments, examples, and modifications will be described with reference to the drawings. However, in the following description, the same components are denoted by the same reference numerals, and repeated description is omitted.
The configuration of the outer periphery of the display device will be described with reference to FIGS. 1A and 1B.
FIG. 1A is a plan view showing a configuration of a display device. 1B is an enlarged view of a region B in FIG. 1A, (a) is a plan view, and (b) is a cross-sectional view taken along line AA ′ shown in (a).
The display device 10 includes a TFT substrate 11 and a CF substrate 12. The sealing material 15 for bonding the TFT substrate 11 and the CF substrate 12 is located in the sealing region 15A between the inner end 15i and the outer end 15o. The sealing material 15 is located outside the active region 13. The wide wiring 14 (wiring area 14A) overlaps with the seal area 15A and is located outside the active area 13. The wiring region 14A and the seal region 15A are located outside the active region outer end 13o. That is, the wiring 14 and the sealing material 15 are covered with the outermost light shielding layer BM16.

表示装置100の端部からシール領域の外端15oまでの距離をL1、配線領域14Aの外端までの距離をL2、シール領域の内端15iまでの距離をL3、配線領域14Aの内端までの距離をL4、アクティブ領域外端13oまでの距離をL5とする。例えば、L1は0〜200μm、L2は100〜400μm、L3は300〜1200μm、L4は400〜1800μm、L5は450〜2000μmである。図1Aおよび図1Bでは、配線領域14Aの一部とシール領域15Aの一部が重なっている場合が示されているが、後述する比較例や実施の形態、実施例、変形例のように配線領域14Aのすべてがシール領域15Aの内に含まれていてもよい。   The distance from the end of the display device 100 to the outer end 15o of the seal region is L1, the distance to the outer end of the wiring region 14A is L2, the distance to the inner end 15i of the seal region is L3, and the inner end of the wiring region 14A Is L4, and the distance to the active region outer edge 13o is L5. For example, L1 is 0 to 200 μm, L2 is 100 to 400 μm, L3 is 300 to 1200 μm, L4 is 400 to 1800 μm, and L5 is 450 to 2000 μm. 1A and 1B show a case in which a part of the wiring region 14A and a part of the seal region 15A overlap each other. However, wiring is performed as in comparative examples, embodiments, examples, and modifications described later. All of the region 14A may be included in the seal region 15A.

配線14や配線18がTFT基板11の上に形成され、有機感光性層間膜17で覆われている。有機感光性層間膜17の上にシール材15および液晶層19が形成される。有機感光性層間膜17は開口部を有し、該開口部にもシール材15が形成される。有機感光性層間膜17の厚さt1は、例えば2〜3μmである。CF基板12の上(図1Bにおいては下)に遮光層16やカラーフィルタが形成される。遮光層16と有機感光性層間膜17の間にフォトスペーサ(柱スペーサ)20が形成される。TFT基板11およびCF基板12の両方には、図示していない配向膜が形成され、液晶層19はそれらの配向膜に挟まれている。   Wirings 14 and 18 are formed on the TFT substrate 11 and covered with an organic photosensitive interlayer film 17. A sealing material 15 and a liquid crystal layer 19 are formed on the organic photosensitive interlayer film 17. The organic photosensitive interlayer film 17 has an opening, and the sealing material 15 is also formed in the opening. The thickness t1 of the organic photosensitive interlayer film 17 is, for example, 2 to 3 μm. A light shielding layer 16 and a color filter are formed on the CF substrate 12 (below in FIG. 1B). A photo spacer (column spacer) 20 is formed between the light shielding layer 16 and the organic photosensitive interlayer film 17. An alignment film (not shown) is formed on both the TFT substrate 11 and the CF substrate 12, and the liquid crystal layer 19 is sandwiched between the alignment films.

<比較例>
図2を用いて、TFT基板とCF基板を貼り合せるシール領域において、幅の広い配線部分では、シール材料を仮硬化するためのUV光が十分に照射されないことを説明する
図2は比較例に係る表示装置のシール領域にUV光が十分に照射されないことを説明する図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。
図2(a)に示すようにシール材15の幅が配線14aの幅よりも広い。TFT基板11とCF基板12を貼り合せ時はシール材15の上には遮光層16があるため、シール材15をUV光で仮硬化する場合は、TFT基板11の裏側からUV光22を照射することになる。配線14aは電源やグラウンド配線であるため、幅が広い低抵抗の配線であり、例えばアルミニウムやバリアメタルを積層したアルミニウム等の金属(遮光膜)が使用される。金属はUV光を透過しない。したがって、比較例に係る表示装置10Aでは、配線14aに開口部21aを設けて、UV光22がシール材15にできるだけ照射するようにされる。ここで、シール材の幅は500μm、配線14aの幅は200μm、開口部21aの大きさは10μm×5μmである。
<Comparative example>
FIG. 2 is used to explain that in a seal region where a TFT substrate and a CF substrate are bonded together, a wide wiring portion is not sufficiently irradiated with UV light for temporarily curing the seal material. It is a figure explaining UV light not fully irradiated to the seal | sticker area | region of such a display apparatus, (a) is a top view seen from the TFT substrate side of a seal | sticker area | region, (b) is A- shown by (a). It is sectional drawing of the seal | sticker area | region in A 'line.
As shown in FIG. 2A, the width of the sealing material 15 is wider than the width of the wiring 14a. When the TFT substrate 11 and the CF substrate 12 are bonded together, the light shielding layer 16 is provided on the sealing material 15. Therefore, when the sealing material 15 is temporarily cured with UV light, the UV light 22 is irradiated from the back side of the TFT substrate 11. Will do. Since the wiring 14a is a power supply or ground wiring, it is a wide and low resistance wiring, and for example, a metal (light-shielding film) such as aluminum or aluminum laminated with a barrier metal is used. Metal does not transmit UV light. Therefore, in the display device 10A according to the comparative example, the opening portion 21a is provided in the wiring 14a so that the UV light 22 is irradiated to the sealing material 15 as much as possible. Here, the width of the sealing material is 500 μm, the width of the wiring 14 a is 200 μm, and the size of the opening 21 a is 10 μm × 5 μm.

しかし、図2(b)に示すように配線14の陰の領域にはUV光22が照射されず、UV光未照射領域23が存在し、仮硬化が不十分となる。なお、開口部21aを大きくすることによりUV光未照射領域23を小さくすることはできるが、配線14aの抵抗が大きくなる。したがって、開口部21aはあまり大きくすることができない。   However, as shown in FIG. 2B, the shadow area of the wiring 14 is not irradiated with the UV light 22, and the UV light non-irradiated area 23 exists, and the temporary curing becomes insufficient. Although the UV light non-irradiation region 23 can be reduced by increasing the opening 21a, the resistance of the wiring 14a increases. Therefore, the opening 21a cannot be made too large.

<実施の形態>
実施の形態に係る表示装置の構成および比較例に係る表示装置よりもシール領域にUV光が十分に照射されることを、図3を用いて説明する。
図3は実施の形態に係る表示装置のシール領域にUV光が十分に照射されることを説明する図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。(a)はシール領域の平面図、(b)はシール領域の断面図である。
実施の形態に係る表示装置は、比較例に係る表示装置10Aに対して、配線端または開口部には曲面反射部を追加したものである。
<Embodiment>
The configuration of the display device according to the embodiment and the fact that the UV light is sufficiently irradiated to the seal region as compared with the display device according to the comparative example will be described with reference to FIG.
3A and 3B are diagrams for explaining that the UV light is sufficiently applied to the seal region of the display device according to the embodiment. FIG. 3A is a plan view of the seal region viewed from the TFT substrate side, and FIG. It is sectional drawing of the seal | sticker area | region in the AA 'line shown by (a). (A) is a top view of a seal | sticker area | region, (b) is sectional drawing of a seal | sticker area | region.
The display device according to the embodiment is obtained by adding a curved reflection portion at the wiring end or opening to the display device 10A according to the comparative example.

図3に示される表示装置10Bには、シール材15に接する部分であって、配線14aの孔状の開口部21aには反射部31aが、配線14aの端部の外側に隣接する部分には配線端と平行に反射部31bが設置されている。ここで、シール材の幅は500μm、配線14aの幅は200μm、開口部21aの大きさは10μm×5μm、反射部31aの大きさは8μm×4μm、反射部31bの幅は30μmである。   The display device 10B shown in FIG. 3 is a portion that is in contact with the sealing material 15, and includes a reflective portion 31a in the hole-like opening 21a of the wiring 14a and a portion adjacent to the outside of the end of the wiring 14a. A reflecting portion 31b is installed in parallel with the wiring end. Here, the width of the sealing material is 500 μm, the width of the wiring 14 a is 200 μm, the size of the opening 21 a is 10 μm × 5 μm, the size of the reflecting portion 31 a is 8 μm × 4 μm, and the width of the reflecting portion 31 b is 30 μm.

反射部31a、31bで反射されるUV光22は、直接または配線14aで反射して配線14aの裏側にもまわりこみ、UV光未照射領域23を比較例に係る表示装置10Aよりも小さくすることができる。図3では、配線端および開口部には曲面反射部を有している場合を示しているが、配線端および開口部のいずれか一方に曲面反射部を有していればよい。なお、反射部31a、31bに替えて散乱・屈折部であっても同様な作用効果を有する。   The UV light 22 reflected by the reflecting portions 31a and 31b may be reflected directly or by the wiring 14a and wrap around the back side of the wiring 14a to make the UV light non-irradiated region 23 smaller than the display device 10A according to the comparative example. it can. Although FIG. 3 shows a case where the wiring end and the opening have a curved reflection part, it is sufficient that either the wiring end or the opening has a curved reflection part. In addition, it has the same effect even if it is a scattering and refraction part instead of the reflection parts 31a and 31b.

以上まとめると、アレイ基板の幅の広い配線の端部、あるいは、配線のスリット状の開口部において、アレイ基板の配線層と対抗基板の遮光層とにはさまれる領域に、曲面状の反射領域、あるいは、散乱、屈折領域を設ける。   In summary, at the end of the wide wiring of the array substrate or the slit-shaped opening of the wiring, the curved reflection region is located in the region sandwiched between the wiring layer of the array substrate and the light shielding layer of the opposing substrate. Alternatively, scattering and refraction areas are provided.

配線の開口部を通ったUV光は、曲面状の反射領域に反射散乱され、あるいは、散乱、屈折領域に散乱、屈折されて配線の裏側にまわりこみ、配線の陰になっていた部分のシール材料にも照射され、仮硬化の効率が向上する。また、配線の開口部の面積を小さくできるため、配線抵抗の上昇を抑制できる。   The UV light that has passed through the opening of the wiring is reflected and scattered in the curved reflection area, or scattered and refracted in the refracting area and wraps around the back side of the wiring, and the sealing material that is behind the wiring Also, the efficiency of temporary curing is improved. In addition, since the area of the opening of the wiring can be reduced, an increase in wiring resistance can be suppressed.

実施例1に係る表示装置について、図4を用いて説明する。
図4は実施例1に係る表示装置のシール領域を示す図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。
実施例1に係る表示装置10Cには、シール材15に接する有機感光性層間膜17の上あって、配線14aの孔状の開口部21aには穴状の曲面反射部41aが、配線14aの端部の外側に隣接する部分には配線端と平行に溝状の曲面反射部41bが設置されている。穴状の曲面反射部41aは、平面視で楕円形状、断面視で半リング形状である。溝状の曲面反射部41bは、平面視で長方形形状、断面視で半リング形状である。曲面反射部41a、41bには、金属等のUV光を反射する材料を用いる。ここで、シール材の幅は500μm、配線14の幅は200μm、開口部21aの大きさは10μm×5μm、曲面反射部41aの大きさは8μm×4μm、曲面反射部41bの幅は30μmである。
A display device according to Example 1 will be described with reference to FIG.
4A and 4B are diagrams illustrating a seal region of the display device according to the first embodiment, in which FIG. 4A is a plan view of the seal region viewed from the TFT substrate side, and FIG. 4B is a line AA ′ illustrated in FIG. It is sectional drawing of the seal | sticker area | region in.
In the display device 10C according to the first embodiment, the hole-shaped curved reflection portion 41a is provided in the hole-shaped opening 21a of the wiring 14a on the organic photosensitive interlayer film 17 in contact with the sealing material 15, and the wiring 14a. A groove-like curved reflection portion 41b is installed in a portion adjacent to the outside of the end portion in parallel with the wiring end. The hole-shaped curved reflecting portion 41a has an elliptical shape in plan view and a semi-ring shape in sectional view. The groove-like curved reflecting portion 41b has a rectangular shape in plan view and a semi-ring shape in sectional view. A material that reflects UV light, such as metal, is used for the curved reflecting portions 41a and 41b. Here, the width of the sealing material is 500 μm, the width of the wiring 14 is 200 μm, the size of the opening 21 a is 10 μm × 5 μm, the size of the curved reflecting portion 41 a is 8 μm × 4 μm, and the width of the curved reflecting portion 41 b is 30 μm. .

次に実施例1に係る表示装置の曲面反射部を製造する方法について、図9A〜図9Fを用いて説明する。   Next, a method for manufacturing the curved reflecting portion of the display device according to the first embodiment will be described with reference to FIGS. 9A to 9F.

図5A、図5B、図5C、図5D、図5E、図5Fは、実施例1に係る表示装置の曲面反射部を製造する方法を示す断面図である。   5A, FIG. 5B, FIG. 5C, FIG. 5D, FIG. 5E, and FIG. 5F are cross-sectional views illustrating a method of manufacturing the curved reflecting portion of the display device according to the first embodiment.

図5Aに示すように、配線14aの上に有機感光性層間膜17を形成する。有機感光性層間膜17をUV光52でハーフトーン露光し(図5B)、現像、メルトベーク、ポストベークして、有機感光性層間膜17に穴51aおよび溝51bを形成する(図5C)。図5Dに示すように、穴51aおよび溝51bを形成した有機感光性層間膜17上に金属53を成膜する。リソグラフィでレジストパターン54を形成し(図5E)、エッチングおよびレジスト除去して穴状の曲面反射部41aおよび溝状の曲面反射部41bを形成する(図5F)
<変形例1>
実施例1に係る表示装置の変形例(変形例1)について、図6を用いて説明する。
図6は変形例1に係る表示装置のシール領域を示す図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。
変形例1に係る表示装置10Dには、シール材15に接する有機感光性層間膜17の上あって、配線14bのスリット状の開口部21bにはスリットの長手方向と平行に溝状の曲面反射部61aが、配線14bの端部の外側に隣接する部分には配線端と平行に溝状の曲面反射部41bが設置されている。溝状の曲面反射部61bは、平面視で長方形形状、断面視で半リング形状である。曲面反射部61bには、金属等のUV光を反射する材料を用いる。ここで、スリットとは、開口部の長手方向の長さと、開口部の短手方向の長さ(幅)との比が2:1よりも大きいものをいう。
As shown in FIG. 5A, an organic photosensitive interlayer film 17 is formed on the wiring 14a. The organic photosensitive interlayer film 17 is half-tone exposed with UV light 52 (FIG. 5B), developed, melt baked, and post-baked to form holes 51a and grooves 51b in the organic photosensitive interlayer film 17 (FIG. 5C). As shown in FIG. 5D, a metal 53 is formed on the organic photosensitive interlayer film 17 in which the holes 51a and the grooves 51b are formed. A resist pattern 54 is formed by lithography (FIG. 5E), and etching and resist removal are performed to form a hole-like curved reflection portion 41a and a groove-like curved reflection portion 41b (FIG. 5F).
<Modification 1>
A modification (modification 1) of the display device according to the first embodiment will be described with reference to FIG.
6A and 6B are diagrams showing a seal region of a display device according to the first modification, wherein FIG. 6A is a plan view of the seal region viewed from the TFT substrate side, and FIG. 6B is a line AA ′ shown in FIG. It is sectional drawing of the seal | sticker area | region in.
In the display device 10D according to the first modification, the groove-like curved reflection is provided on the organic photosensitive interlayer film 17 in contact with the sealing material 15 and in the slit-like opening 21b of the wiring 14b in parallel with the longitudinal direction of the slit. A groove-like curved reflecting portion 41b is installed in a portion of the portion 61a adjacent to the outside of the end of the wiring 14b in parallel with the wiring end. The groove-like curved reflection portion 61b has a rectangular shape in a plan view and a semi-ring shape in a cross-sectional view. A material that reflects UV light, such as metal, is used for the curved reflecting portion 61b. Here, the term “slit” refers to a slit in which the ratio of the length in the longitudinal direction of the opening to the length (width) in the short direction of the opening is greater than 2: 1.

<変形例2>
実施例1に係る表示装置の変形例(変形例2)について、図7を用いて説明する。
図7は変形例2に係る表示装置のシール領域のTFT基板側から見た平面図である。
変形例2に係る表示装置10Eは、変形例1に係る表示装置10Dの配線14bのスリット状の開口部21bを孔状の開口部21cに替えて、開口部21cの長手方向と平行に溝状の曲面反射部71bを設置したものである。溝状の曲面反射部71bは、平面視で長方形形状、断面視で半リング形状である。曲面反射部71bには、金属等のUV光を反射する材料を用いる。ここで、孔とは、開口部の長手方向の長さと、開口部の短手方向の長さ(幅)との比が2:1以下のものをいう。
<Modification 2>
A modification (modification 2) of the display device according to the first embodiment will be described with reference to FIG.
FIG. 7 is a plan view of the seal region of the display device according to the second modification viewed from the TFT substrate side.
The display device 10E according to the modification 2 replaces the slit-shaped opening 21b of the wiring 14b of the display device 10D according to the modification 1 with the hole-shaped opening 21c, and forms a groove parallel to the longitudinal direction of the opening 21c. The curved reflection part 71b is installed. The groove-like curved reflecting portion 71b has a rectangular shape in plan view and a semi-ring shape in sectional view. A material that reflects UV light, such as metal, is used for the curved reflecting portion 71b. Here, the term “hole” means that the ratio of the length in the longitudinal direction of the opening to the length (width) in the short direction of the opening is 2: 1 or less.

<変形例3>
実施例1、変形例1および変形例2に係る表示装置の変形例(変形例3)について、図8を用いて説明する。
図8は変形例3に係る表示装置の曲面反射部の断面図である。実施例1、変形例1および変形例2に係る表示装置の曲面反射部41a、41b、61b、71bは断面視で半リング形状をしていたが、変形例3では曲面反射部81の頂点に金属の開口部82を設ける。曲面反射部の裏側にもUV光を照射することができる。
<Modification 3>
A modification example (modification example 3) of the display device according to Example 1, Modification Example 1 and Modification Example 2 will be described with reference to FIG.
FIG. 8 is a cross-sectional view of a curved reflection portion of a display device according to Modification 3. The curved surface reflecting portions 41a, 41b, 61b, 71b of the display devices according to the first example, the first modified example, and the second modified example have a semi-ring shape in a cross-sectional view. A metal opening 82 is provided. UV light can also be irradiated to the back side of the curved reflecting portion.

<変形例4>
実施例1、変形例1および変形例2に係る表示装置の変形例(変形例4)について、図9を用いて説明する。
図9は変形例4に係る表示装置の曲面反射部の断面図である。実施例1、変形例1および変形例2に係る表示装置の曲面反射部41a、41b、61b、71bは断面視で半リング形状をしていたが、変形例4では曲面反射部のアクティブ領域13側の金属を除去する。アクティブ領域13に有害なUV光の迷光を低減することができる。
<Modification 4>
A modification (Modification 4) of the display device according to Example 1, Modification 1 and Modification 2 will be described with reference to FIG.
FIG. 9 is a cross-sectional view of a curved reflecting portion of a display device according to Modification 4. The curved surface reflecting portions 41a, 41b, 61b, 71b of the display devices according to the first embodiment, the first modified example, and the second modified example have a semi-ring shape in cross-sectional view, but in the modified example 4, the active region 13 of the curved reflecting portion. Remove the metal on the side. The stray light of UV light harmful to the active region 13 can be reduced.

実施例2に係る表示装置について、図10を用いて説明する。
図10は実施例2に係る表示装置のシール領域を示す図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。
実施例2に係る表示装置10Fには、シール材15に接する有機感光性層間膜17の上あって、配線14aの孔状の開口部21aには穴状の曲面散乱・屈折部41Aaが、配線14aの端部の外側に隣接する部分には配線端と平行に溝状の曲面散乱・屈折部41Abが設置されている。穴状の曲面散乱・屈折部41Aaは、平面視で楕円形状、断面視で半リング形状である。溝状の曲面散乱・屈折部41Abは、平面視で長方形形状、断面視で半リング形状である。曲面散乱・屈折部41Aa、41Abには、屈折率2程度のSiNやITO等のUV光を散乱する材料を用いる。ここで、シール材の幅は500μm、配線14の幅は200μm、開口部21aの大きさは10μm×5μm、曲面散乱・屈折部41Aaの大きさは8μm×4μm、曲面散乱・屈折部41Abの幅は30μmである。
A display device according to Example 2 will be described with reference to FIG.
10A and 10B are diagrams illustrating a seal region of the display device according to the second embodiment, in which FIG. 10A is a plan view of the seal region viewed from the TFT substrate side, and FIG. 10B is a line AA ′ illustrated in FIG. It is sectional drawing of the seal | sticker area | region in.
In the display device 10F according to the second embodiment, a hole-shaped curved scattering / refracting portion 41Aa is provided on the organic photosensitive interlayer film 17 in contact with the sealing material 15 and in the hole-shaped opening 21a of the wiring 14a. A groove-like curved scattering / refracting portion 41Ab is provided in a portion adjacent to the outside of the end portion 14a in parallel with the wiring end. The hole-like curved scattering / refracting portion 41Aa has an elliptical shape in plan view and a semi-ring shape in sectional view. The groove-like curved scattering / refracting portion 41Ab has a rectangular shape in a plan view and a semi-ring shape in a sectional view. A material that scatters UV light such as SiN or ITO having a refractive index of about 2 is used for the curved surface scattering / refractive portions 41Aa and 41Ab. Here, the width of the sealing material is 500 μm, the width of the wiring 14 is 200 μm, the size of the opening 21a is 10 μm × 5 μm, the size of the curved scattering / refracting portion 41Aa is 8 μm × 4 μm, and the width of the curved scattering / refracting portion 41Ab. Is 30 μm.

次に実施例2に係る表示装置の曲面反射部を製造する方法について、図11A〜図11Fを用いて説明する。
図11A、図11B、図11C、図11D、図11E、図11Fは、実施例2に係る表示装置の曲面反射部を製造する方法を示す断面図である。
図11Aに示すように、配線14aの上に有機感光性層間膜17を形成する。有機感光性層間膜17をUV光52でハーフトーン露光し(図11B)、現像、メルトベーク、ポストベークして、有機感光性層間膜17に穴51aおよび溝51bを形成する(図11C)。図11Dに示すように、穴51aおよび溝51bを形成した有機感光性層間膜17上のSiNまたはITO53Aを成膜する。リソグラフィでレジストパターン54を形成し(図11E)、エッチングおよびレジスト除去して穴状の曲面散乱・屈折部41Aaおよび溝状の曲面散乱・屈折部41Abを形成する(図11F)
<変形例5>
実施例2に係る表示装置の変形例(変形例5)について、図12を用いて説明する。
図12は変形例5に係る表示装置のシール領域を示す図であり、(a)はシール領域のTFT基板側から見た平面図、(b)は(a)に示されるA−A’線におけるシール領域の断面図である。
変形例5に係る表示装置10Gには、シール材15に接する有機感光性層間膜17の上あって、配線14bのスリット状の開口部21bにはスリットの長手方向と平行に溝状の曲面散乱・屈折部61Abが、配線14bの端部の外側に隣接する部分には配線端と平行に溝状の曲面散乱・屈折部41Abが設置されている。溝状の曲面散乱・屈折部61Abは、曲面散乱・屈折部41Abと同様に、平面視で長方形形状、断面視で半リング形状である。曲面散乱・屈折部61Abには、曲面散乱・屈折部41Abと同様に、屈折率2程度のSiNやITO等のUV光を散乱する材料を用いる。
Next, a method for manufacturing the curved reflecting portion of the display device according to the second embodiment will be described with reference to FIGS. 11A to 11F.
11A, 11B, 11C, 11D, 11E, and 11F are cross-sectional views illustrating a method of manufacturing the curved reflecting portion of the display device according to the second embodiment.
As shown in FIG. 11A, an organic photosensitive interlayer film 17 is formed on the wiring 14a. The organic photosensitive interlayer film 17 is half-tone exposed with UV light 52 (FIG. 11B), developed, melt baked, and post-baked to form holes 51a and grooves 51b in the organic photosensitive interlayer film 17 (FIG. 11C). As shown in FIG. 11D, SiN or ITO 53A is formed on the organic photosensitive interlayer film 17 in which the holes 51a and the grooves 51b are formed. A resist pattern 54 is formed by lithography (FIG. 11E), and etching and resist removal are performed to form a hole-shaped curved scattering / refracting portion 41Aa and a groove-shaped curved scattering / refracting portion 41Ab (FIG. 11F).
<Modification 5>
A modification (modification 5) of the display device according to the second embodiment will be described with reference to FIG.
12A and 12B are diagrams showing a seal region of a display device according to the modification 5. FIG. 12A is a plan view of the seal region viewed from the TFT substrate side, and FIG. 12B is a line AA ′ shown in FIG. It is sectional drawing of the seal | sticker area | region in.
The display device 10G according to the modified example 5 has an organic photosensitive interlayer film 17 in contact with the sealing material 15, and the slit-like opening 21b of the wiring 14b has a groove-like curved surface scattering parallel to the longitudinal direction of the slit. A groove-like curved scattering / refracting portion 41Ab is installed in a portion adjacent to the outside of the end of the wiring 14b where the refracting portion 61Ab is parallel to the wiring end. The groove-like curved scattering / refracting portion 61Ab has a rectangular shape in plan view and a semi-ring shape in sectional view, like the curved scattering / refracting portion 41Ab. For the curved surface scattering / refracting portion 61Ab, a material that scatters UV light, such as SiN or ITO having a refractive index of about 2, is used as in the curved surface scattering / refracting portion 41Ab.

<変形例6>
実施例2に係る表示装置の変形例(変形例6)について、図13を用いて説明する。
図13は変形例6に係る表示装置のシール領域のTFT基板側から見た平面図である。
変形例6に係る表示装置10Hは、変形例5に係る表示装置10Gの配線14bのスリット状の開口部21bを穴状の開口部21cに替えて、開口部21cの長手方向と平行に溝状の曲面散乱・屈折部71Abを設置したものである。溝状の曲面散乱・屈折部71Abは、平面視で長方形形状、断面視で半リング形状である。曲面散乱・屈折部71Abには、屈折率2程度のSiNやITO等のUV光を散乱する材料を用いる。
<Modification 6>
A modification (modification 6) of the display device according to the second embodiment will be described with reference to FIG.
FIG. 13 is a plan view of the seal region of the display device according to the modification 6 as viewed from the TFT substrate side.
In the display device 10H according to the modified example 6, the slit-shaped opening 21b of the wiring 14b of the display device 10G according to the modified example 5 is replaced with a hole-shaped opening 21c, and the groove shape is parallel to the longitudinal direction of the opening 21c. The curved surface scattering / refracting part 71Ab is installed. The groove-like curved scattering / refracting portion 71Ab has a rectangular shape in a plan view and a semi-ring shape in a sectional view. A material that scatters UV light such as SiN or ITO having a refractive index of about 2 is used for the curved surface scattering / refractive portion 71Ab.

以上、本発明者によってなされた発明を実施の形態、実施例および変形例に基づき具体的に説明したが、本発明は、上記実施の形態、実施例および変形例に限定されるものではなく、種々変更可能であることはいうまでもない。   As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments, examples, and modifications. However, the present invention is not limited to the above-described embodiments, examples, and modifications. It goes without saying that various changes can be made.

10、10A、10B、10C、10D、10E、10F、10G、10H・・・表示装置
11・・・TFT基板
12・・・対向基板
13・・・アクティブ領域
13o・・・アクティブ領域外端
14、14a、14b・・・配線
14A・・・配線領域
15・・・シール材
15A・・・シール領域
15i・・・シール領域の内端
15o・・・シール領域の外端
16・・・最外周の遮光層(ブラックマトリクス)
17・・・有機感光性層間膜
18・・・配線
19・・・液晶層
20・・・フォトスペーサ(柱スペーサ)
21a、21b・・・開口部
22・・・UV光
23・・・UV光未照射領域
31a・・・反射部
31b・・・反射部
10, 10A, 10B, 10C, 10D, 10E, 10F, 10G, 10H... Display device 11... TFT substrate 12 .. counter substrate 13... Active region 13o. 14a, 14b ... wiring 14A ... wiring region 15 ... sealing material 15A ... sealing region 15i ... inner end 15o of sealing region ... outer end 16 of sealing region ... outermost periphery Shading layer (black matrix)
17 ... Organic photosensitive interlayer 18 ... Wiring 19 ... Liquid crystal layer 20 ... Photo spacer (column spacer)
21a, 21b ... opening 22 ... UV light 23 ... UV light non-irradiated area 31a ... reflective part 31b ... reflective part

Claims (18)

表示装置は、
第1基板と、
第2基板と、
前記第1基板と第2基板を貼り合わせるシール材と、
を備え、
前記第1基板は開口部を有する配線層を備え、
前記第2基板は遮光層を備え、
前記配線層は、平面視で前記シール材と重なる領域を有し、
前記配線層の端部または前記配線層の開口部において、前記配線層と前記遮光層とに挟まれる領域に、反射部または散乱・屈折部を有する。
The display device
A first substrate;
A second substrate;
A sealing material for bonding the first substrate and the second substrate;
With
The first substrate includes a wiring layer having an opening,
The second substrate includes a light shielding layer;
The wiring layer has a region overlapping the sealing material in plan view,
A reflection part or a scattering / refractive part is provided in a region sandwiched between the wiring layer and the light-shielding layer at the end of the wiring layer or the opening of the wiring layer.
請求項1の表示装置において、
前記配線層の端部は溝状の曲面反射部を有し、
前記配線層の開口部は穴状の曲面反射部を有する。
The display device according to claim 1.
The end portion of the wiring layer has a groove-like curved reflection portion,
The opening of the wiring layer has a hole-like curved reflecting portion.
請求項1の表示装置において、
前記配線層の端部には溝状の曲面反射部を有し、
前記配線層の開口部には溝状の曲面反射部を有する。
The display device according to claim 1.
An end portion of the wiring layer has a groove-like curved reflection portion,
The opening of the wiring layer has a groove-like curved reflecting portion.
請求項3の表示装置において、
前記配線層の開口部はスリット形状である。
The display device according to claim 3.
The opening of the wiring layer has a slit shape.
請求項3の表示装置において、
前記配線層の開口部は孔形状である。
The display device according to claim 3.
The opening of the wiring layer has a hole shape.
請求項2の表示装置において、
前記曲面反射部は頂部に開口部を有する。
The display device according to claim 2.
The curved reflecting portion has an opening at the top.
請求項2の表示装置において、
前記曲面反射部のアクフィブ領域側は開口部を有する。
The display device according to claim 2.
An active region side of the curved reflecting portion has an opening.
請求項1の表示装置において、
前記配線層の端部は溝状の曲面散乱・屈折部を有し、
前記配線層の開口部は穴状の曲面散乱・屈折部を有する。
The display device according to claim 1.
The end portion of the wiring layer has a groove-like curved scattering / refracting portion,
The opening of the wiring layer has a hole-like curved scattering / refracting portion.
請求項1の表示装置において、
前記配線層の端部には溝状の曲面散乱・屈折部を有し、
前記配線層の開口部には溝状の曲面散乱・屈折部を有する。
The display device according to claim 1.
The end of the wiring layer has a groove-like curved scattering / refracting part,
The opening of the wiring layer has a groove-like curved scattering / refracting portion.
請求項9の表示装置において、
前記配線層の開口部はスリット形状である。
The display device according to claim 9.
The opening of the wiring layer has a slit shape.
請求項9の表示装置において、
前記配線層の開口部は孔形状である。
The display device according to claim 9.
The opening of the wiring layer has a hole shape.
請求項1の表示装置において、
前記配線層と前記シール材の間に有機性感光層間膜を有し、
前記反射部または散乱・屈折部は前記有機性感光層間膜上に形成される。
The display device according to claim 1.
An organic photosensitive interlayer film between the wiring layer and the sealing material;
The reflection part or the scattering / refracting part is formed on the organic photosensitive interlayer film.
請求項1の表示装置において、
前記配線層は、平面視で前記シール材が配置される領域内にある。
The display device according to claim 1.
The wiring layer is in a region where the sealing material is disposed in a plan view.
請求項1の表示装置において、
前記第1基板と前記第2基板との間に液晶層がある。
The display device according to claim 1.
There is a liquid crystal layer between the first substrate and the second substrate.
表示装置の製造方法は、
(a)配線層の上に有機感光性層間膜を形成する工程と、
(b)前記有機感光性層間膜に穴を形成する工程と、
(c)前記穴を形成した有機感光性層間膜上に金属またはSiNまたはITOを成膜する工程と、
(d)前記金属またはSiNまたはITOをパターニングして、穴状の曲面反射部または曲面散乱部を形成する工程と、
を有する。
The manufacturing method of the display device is as follows:
(A) forming an organic photosensitive interlayer film on the wiring layer;
(B) forming a hole in the organic photosensitive interlayer film;
(C) forming a metal, SiN or ITO on the organic photosensitive interlayer film in which the hole is formed;
(D) patterning the metal or SiN or ITO to form a hole-like curved reflection portion or curved scattering portion;
Have
請求項15の表示装置の製造方法において、
前記(b)工程で、前記有機感光性層間膜に溝を形成し、
前記(c)工程で、前記溝を形成した有機感光性層間膜上に金属またはSiNまたはITOを成膜し、
前記(d)工程で、前記金属またはSiNまたはITOをパターニングして、溝状の曲面反射部または曲面散乱部を形成する。
In the manufacturing method of the display device according to claim 15,
In the step (b), a groove is formed in the organic photosensitive interlayer film,
In the step (c), a metal, SiN, or ITO is formed on the organic photosensitive interlayer film in which the groove is formed,
In the step (d), the metal, SiN, or ITO is patterned to form a groove-like curved reflecting portion or curved scattering portion.
請求項15の表示装置の製造方法において、
前記有機感光性層間膜に穴はハーフトーン露光で形成する。
In the manufacturing method of the display device according to claim 15,
Holes are formed in the organic photosensitive interlayer film by halftone exposure.
請求項16の表示装置の製造方法において、
前記有機感光性層間膜に溝はハーフトーン露光で形成する。
In the manufacturing method of the display device according to claim 16,
Grooves are formed in the organic photosensitive interlayer film by halftone exposure.
JP2013224597A 2013-10-29 2013-10-29 Display device and method for manufacturing the same Pending JP2015087480A (en)

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