JP2015082514A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a multi-chip semiconductor module having a compact size and excellent high-frequency characteristics.SOLUTION: A semiconductor module includes: a substrate; a first semiconductor chip having a first ground pattern and a second ground pattern; a second semiconductor chip having via holes; a first ground surface provided on the substrate and connected to the first ground pattern; a second ground surface provided on the substrate so as to be separated from the first ground surface and connected to the via holes; and connecting means for electrically connecting the second ground pattern and the via holes.

Description

  The present invention relates to a semiconductor module on which a plurality of semiconductor chips used for terrestrial microwave communication, mobile communication, and the like are mounted.

  In a semiconductor module used in terrestrial microwave communication and mobile communication, a system-in-package in which a plurality of circuits having different functions are mounted in one module (package) may be used. In particular, when a plurality of circuits having different functions are realized as a semiconductor chip, it is called a multichip package. In recent years, development of Si (silicon) circuits that can achieve high integration and low cost has progressed, and different semiconductor chips such as GaAs (gallium arsenide, gallium arsenide) semiconductor chips are mounted on the same package. Multi-chip packages may be used.

  FIG. 5 is a simplified block diagram of a high-power amplifier module described in Non-Patent Document 1, for example, as a conventional example. This is an example in which a Si semiconductor chip not having a VIA (via) hole structure and a GaAs semiconductor chip having a VIA hole structure are mounted on the same module. Here, 101 is a Si semiconductor chip, 102 is a GaAs semiconductor chip, 103 is a mounting ground plane, 104 is a signal line, 105 is a ground pad on the Si semiconductor substrate, 106 is a ground connection wire, and 107 is a VIA hole on the GaAs semiconductor substrate. , 108 are ground pads on the GaAs semiconductor substrate, 109 is a ground connection wire, 110 is a signal pad on the Si semiconductor substrate, 111 is a signal connection wire, 112 is a signal pad on the GaAs semiconductor substrate, and 113 is a signal connection wire. .

  The ground of the Si semiconductor chip 101 not having the VIA hole structure is connected to the mounting ground surface 103 via the ground connection wire 106 from the ground pad 105 on the Si semiconductor substrate. Among the circuits integrated on the GaAs semiconductor chip 102 having the VIA hole structure, for example, the high frequency ground of the amplifier circuit transistor is connected to the mounting ground surface 103 via the VIA hole 107 on the GaAs semiconductor substrate. A direct current ground or the like is connected to the mounting ground surface 103 via a ground connection wire 109 from a ground pad 108 on a GaAs semiconductor substrate. For signal connection between the Si semiconductor chip 101 and the GaAs semiconductor chip 102, a signal connection wire 111 from the signal pad 110 on the Si semiconductor substrate and a signal connection wire from the signal pad 112 on the GaAs semiconductor substrate are used. This is realized by connecting 113 to the signal line 104. In this conventional example, a high-efficiency high-frequency amplifier peculiar to a GaAs semiconductor is formed on the GaAs semiconductor chip, and a power supply circuit and a control circuit peculiar to the Si semiconductor are formed on the Si semiconductor chip.

  As described above, by mounting two different semiconductor chips on the same module, there is an advantage that functions and performances that are difficult to realize with one semiconductor chip can be realized with one module. Furthermore, by making it into a single module, it is possible to realize a reduction in size and cost compared to the case where a plurality of modules are arranged in parallel.

Presented at 2007 IEEE Radio Frequency Integrated Circuit Symposium, Hau, G, et al., “A WCDMA HBT Power Amplifier Module with Integrated Si DC Power Management IC for Current Reduction under Backoff Operation”, pp. 75-78. Trademark.)

  However, for example, when a high-frequency circuit is integrated on a Si semiconductor chip, the inductance component due to the wire connecting the ground pad on the semiconductor substrate and the mounting ground plane is larger than the inductance component of the VIA hole. May end up. Further, since a wide mounting ground plane for connecting wires is required, the package size may be increased.

  The present invention has been made to solve the above problems, and connects a ground pad on a semiconductor chip not having a VIA hole structure and a ground pad connected to a VIA hole on a semiconductor substrate having a VIA hole structure. Further, by separating the mounting ground surface of the semiconductor substrate having no VIA hole structure from the mounting ground surface on the semiconductor substrate having the VIA hole structure, a small and multi-chip semiconductor package having good high-frequency characteristics is provided. With the goal.

The semiconductor module according to the present invention is
A substrate,
A first semiconductor chip having a first ground pattern and a second ground pattern;
A second semiconductor chip having a via hole;
A first ground plane provided on the substrate and connected to the first ground pattern;
A second ground surface provided on the substrate separately from the first ground surface and connected to the via hole;
Connection means for electrically connecting the second ground pattern and the via hole;
It is characterized by comprising.

  According to the present invention, there is an effect that a multi-chip semiconductor module having a small size and good high frequency characteristics can be obtained.

1 is a configuration diagram showing a semiconductor module according to Embodiment 1 of the present invention. Configuration diagram showing a semiconductor module according to a second embodiment of the present invention Configuration diagram showing a semiconductor module according to Embodiment 3 of the present invention Configuration diagram showing a semiconductor module according to Embodiment 4 of the present invention Configuration diagram showing a conventional semiconductor module

Embodiment 1 FIG.
FIG. 1 shows a semiconductor module showing Embodiment 1 of the present invention. For example, an Si semiconductor chip having no via (VIA) hole structure and an GaAs semiconductor chip having a via hole structure are mounted on the same module. Here, 1 is a Si semiconductor chip that is a first semiconductor chip, 2 is a GaAs semiconductor chip that is a second semiconductor chip, 3 is a mounting ground surface of the Si semiconductor chip that is a first ground surface, and 4 is a second ground surface. Mounting ground plane of the GaAs semiconductor chip, which is the ground plane, 5 is a signal line, 6 is a ground pad on the Si semiconductor substrate which is the first ground pattern, 7 is a ground connection wire, and 8 is Si which is the second ground pattern. A ground pad on the semiconductor substrate, 9 is a connecting means and a wire for connecting the pads, 10 is a ground pad on the GaAs semiconductor substrate, 11 is a via hole on the GaAs semiconductor substrate, 12 is a ground pad on the GaAs semiconductor substrate, 13 Is a ground connection wire, 14 is a signal pad on the Si semiconductor substrate, 15 is a signal connection wire, and 16 is a signal connection. Ear, 17 signal pads on GaAs semiconductor substrate, 20 is a substrate.

  The Si semiconductor chip 1 and the GaAs semiconductor chip 2 are mounted on the substrate 20. A plurality of high-frequency circuits are integrated on the Si semiconductor chip 1, and a high-frequency multistage amplifier circuit is integrated as an example in the first embodiment of the present invention. There are no special conditions for the circuit integrated on the GaAs semiconductor chip 2, and any circuit may be arranged.

1 will be described in more detail.
A DC ground such as a high-frequency ground or a bias circuit of a driver stage amplifier on the Si semiconductor chip 1 on which the high-frequency multistage amplifier circuit is integrated is supplied from the ground pad 6 on the Si semiconductor substrate via the ground connection wire 7. It connects with the mounting ground plane 3 provided above. Further, the high-frequency ground of the high-power stage amplifier on the Si semiconductor chip 1 is connected to the ground pad 10 on the GaAs semiconductor substrate 2 from the ground pad 8 on the Si semiconductor substrate 1 via the wire 9 which is a pad connecting means. Thereafter, the mounting ground plane 4 provided on the substrate 20 is connected via the via hole 11 on the GaAs semiconductor substrate 2 connected to the ground pad 10. Here, the mounting ground surface 4 is provided separately from the mounting ground surface 3 on the substrate 20. On the other hand, a part of the circuit ground on the GaAs semiconductor chip 2 is connected from the ground pad 12 on the GaAs semiconductor substrate 2 to the mounting ground surface 4 provided on the substrate 20 via the ground connection wire 13. For signal connection between the Si semiconductor chip 1 and the GaAs semiconductor chip 2, the signal connection wire 15 from the signal pad 14 on the Si semiconductor substrate 1 and the signal from the signal pad 17 on the GaAs semiconductor substrate 2 are used. This is realized by connecting the connection wires 16 to the signal lines 5 respectively.

  As shown in FIG. 1, a part of the ground 8 of the circuit on the Si semiconductor chip 1 (in FIG. 1, the ground of the high output stage amplifier) is passed through the ground pad 10 and the via hole 11 on the GaAs semiconductor chip 2 and the Si semiconductor. By connecting to a mounting ground 4 different from the chip mounting ground 3, the area of the Si semiconductor chip mounting ground 3 can be reduced, and the semiconductor module can be miniaturized.

  Further, as shown in FIG. 1, by connecting the ground of the high output stage amplifier on the Si semiconductor chip 1 to the mounting ground 4 via the ground pad 10 and the via hole 11 on the GaAs semiconductor chip 2, Not only the length but also the length in the vertical direction can be shortened. As a result, the inductance component between the ground terminal and the ground of the high-power amplifier stage can be reduced, and the high frequency characteristics such as the gain of the amplifier can be improved. it can.

  Further, as shown in FIG. 1, the ground of the high output stage amplifier on the Si semiconductor chip 1 is connected to the mounting ground 4, and the grounds of other circuits on the Si semiconductor chip 1 are mounted on the mounting ground 3 different from the high output stage amplifier. , The loop formed between the high output amplification stage and the driver amplification stage can be cut on the substrate 20 via the mounting ground plane, and the isolation can be increased and the stability can be improved.

  1 shown in the first embodiment of the present invention is one configuration example, and the number and arrangement of pads on the semiconductor chip are not limited to this. Further, a plurality of high-frequency circuits are built in the Si semiconductor chip 1, and a part of the ground of the circuit is separated into a mounting ground 4 different from the mounting ground 3, thereby obtaining the same effect regardless of the type of circuit. It is done.

  Moreover, although the figure shown in Embodiment 1 of this invention showed the example of the Si semiconductor chip as a semiconductor chip which does not have a via-hole structure, and the GaAs semiconductor chip as a semiconductor chip which has a via-hole structure, respectively, it is not restricted to this. For example, even if a semiconductor chip such as GaN (gallium nitride) is used as the semiconductor chip having a via hole structure, the same effect is obtained.

Embodiment 2. FIG.
FIG. 2 shows a semiconductor module showing Embodiment 2 of the present invention. This is an example in which, for example, a Si semiconductor chip 1 that does not have a via hole structure, which is a first semiconductor chip, and two GaAs semiconductor chips that have a via hole structure are mounted on the same module. Here, 2 and 21 are GaAs semiconductor chips that are second semiconductor chips, 4 and 22 are mounting ground surfaces of the GaAs semiconductor chip that are second ground surfaces, and the others are the same as in FIG. Although the substrate 20 is omitted in the figure, the mounting ground planes 3, 4, and 22 are separately provided on the substrate 20 as in FIG. 1. A plurality of high-frequency circuits are integrated on the Si semiconductor chip 1, and a high-frequency multistage amplifier circuit is integrated as an example in the second embodiment of the present invention. There are no special conditions for the circuits integrated on the GaAs semiconductor chips 2 and 21.

  FIG. 2 will be described in more detail. A part of the high-frequency ground on the Si semiconductor chip 1 on which the high-frequency multistage amplifier circuit is integrated is formed on the GaAs semiconductor substrate 2 from the ground pad 8 on the Si semiconductor substrate 1 through the wire 9 which is a pad connecting means. It is connected to the ground pad 10 and then connected to the mounting ground surface 4 via the via hole 11 on the GaAs semiconductor substrate 2 connected to the ground pad 10. Similarly, a part of the high-frequency ground on the Si semiconductor chip 1 is also connected to the mounting ground surface 22 via the via hole 11 on the GaAs semiconductor substrate 21. That is, the ground on the Si semiconductor chip 1 is connected to the different mounting ground surfaces 4 and 22 via the via holes 11 on the different GaAs substrates 2 and 21.

  On the Si semiconductor chip 1, for example, a plurality of circuits corresponding to different frequency bands, and various circuits such as an oscillator in addition to an amplifier can be arranged. If necessary, the ground of these circuits is set to a different GaAs. It can be selectively connected to either of the substrates 2 and 21.

  At this time, as shown in FIG. 2, in the semiconductor module composed of the Si semiconductor chip 1 and the plurality of GaAs semiconductor chips 2 and 21, the ground on the Si semiconductor chip 1 is connected via the via holes 11 on the different GaAs substrates 2 and 21. By connecting to different mounting ground planes 4 and 22, in addition to the effects shown in the first embodiment of the present invention, high isolation between the GaAs semiconductor chips 2 and 21 and the respective provided on the Si semiconductor chip 1 are achieved. It is also possible to achieve high isolation of the circuit.

  2 shown in the second embodiment of the present invention is one configuration example, and the number and arrangement of pads on the semiconductor chip are not limited to this. If a plurality of GaAs semiconductor chips are mounted, the same effect is obtained. Further, if the mounting ground surface of the GaAs semiconductor chip is separated, higher isolation can be obtained. However, it is not limited to this as long as it is separated from at least the mounting ground surface of the Si semiconductor chip 1.

  FIG. 2 shown in the second embodiment of the present invention shows an example of a Si semiconductor chip as a semiconductor chip having no via hole structure and an example of a GaAs semiconductor chip as a semiconductor chip having a via hole structure. For example, even if a semiconductor chip such as GaN is used as a semiconductor chip having a via hole structure, the same effect can be obtained regardless of whether GaAs and GaN are mixedly mounted.

Embodiment 3 FIG.
FIG. 3 shows a semiconductor module showing the third embodiment of the present invention. This is an example of a semiconductor module including, for example, a Si semiconductor chip having no via hole structure and a GaAs semiconductor chip having a via hole structure. Here, 1 is a Si semiconductor chip which is a first semiconductor chip, 2 is a GaAs semiconductor chip which is a second semiconductor chip, and 4 is a GaAs semiconductor chip which is a second ground plane provided on a substrate 20 (not shown). 6 is a ground pad on the Si semiconductor substrate which is the first ground pattern, 7 is a ground connection wire, 8 is a ground pad on the Si semiconductor substrate which is the second ground pattern, and 31 is not shown. This is a ground surface that is a first ground surface provided on the substrate 20. A plurality of high-frequency circuits are integrated on the Si semiconductor chip 1, and a high-frequency multistage amplifier circuit is integrated as an example in the third embodiment of the present invention. There are no special conditions for the circuit integrated on the GaAs semiconductor chip.

  FIG. 3 will be described in more detail. A DC ground such as a high-frequency ground or a bias circuit of a driver stage amplifier on the Si semiconductor chip 1 on which the high-frequency multistage amplifier circuit is integrated is a substrate (not shown) from a ground pad 6 on the Si semiconductor substrate via a ground connection wire 7. 20 is connected to a ground plane 31 provided on the substrate 20. The high-frequency ground on the Si semiconductor chip 1 on which the high-frequency multistage amplifier circuit is integrated is obtained by connecting the ground pad 8 on the Si semiconductor substrate 1 and the ground pad 10 (not shown) on the GaAs semiconductor substrate 2 by flip mounting. After that, the mounting ground surface 4 provided on the substrate 20 (not shown) is connected through the via hole 11 (not shown) on the GaAs semiconductor substrate 2 connected to the ground pad 10.

  In flip mounting, the Si semiconductor chip 1 can be directly mounted on the GaAs semiconductor substrate 2 by using bumps made of metal or the like (not shown in FIG. 3 because it is the back surface of the Si semiconductor chip 1 in the drawing).

  As shown in FIG. 3, in the semiconductor module composed of the Si semiconductor chip 1 and the GaAs semiconductor chip 2, the ground 8 on the Si semiconductor chip 1 is connected to the ground pad 10 connected to the via hole 11 on the GaAs substrate 2 by flip mounting. In addition, by connecting to the mounting ground plane 4, the area of the mounting ground plane of the Si semiconductor chip 1 can be reduced, and the semiconductor module can be significantly reduced in size.

  Also, as shown in FIG. 3, the ground 8 on the Si semiconductor chip 1 is connected to the ground pad 10 connected to the via hole 11 on the GaAs substrate 2 by flip mounting, and then connected to the mounting ground surface 4 to thereby achieve high output amplification. The inductance component between the ground terminal of the stage and the ground can be greatly reduced, and high frequency characteristics such as the gain of the amplifier can be improved.

  In addition, the third embodiment of the invention shown in FIG. 3 has the same effect as the first embodiment of the invention.

  The figure shown in the third embodiment of the present invention is one configuration example, and the number and arrangement of pads on the semiconductor chip are not limited to this. In addition, by incorporating a plurality of high-frequency circuits in the Si semiconductor chip and separating a part of the ground of the circuit, the same effect can be achieved such as high isolation regardless of the type of circuit.

  Moreover, although the figure shown in Embodiment 3 of this invention showed the example of Si semiconductor chip as a semiconductor chip which does not have a via-hole structure, and the GaAs semiconductor chip as a semiconductor chip which has a via-hole structure, respectively, it is not restricted to this. For example, even if a semiconductor chip such as GaN is used as the semiconductor chip having a via hole structure, the same effect is obtained.

Embodiment 4 FIG.
FIG. 4 shows a semiconductor module showing Embodiment 4 of the present invention. For example, an Si semiconductor chip having no via hole structure and an GaAs semiconductor chip having a via hole structure, for example, are mounted on the same module, and are composed of the same elements as in FIG. However, it is assumed that the digital circuit 32 and the analog circuit 33 are mixedly mounted on the Si semiconductor chip. There are no special requirements for circuits integrated on GaAs semiconductor chips.

  FIG. 4 will be described in more detail. The ground of at least the digital circuit on the Si semiconductor chip 1 on which the digital circuit and the analog circuit are mixedly mounted is connected to the ground plane from the ground pad 6 on the Si semiconductor substrate 1 which is the first ground pattern via the ground connection wire 7. 3 is connected. The ground of other analog circuits is connected to the ground pad 10 on the GaAs semiconductor substrate 2 from the ground pad 8 on the Si semiconductor substrate 1 which is the second ground pattern via the wire 9 which is a pad-to-pad connecting means. Thereafter, the mounting ground plane 4 is connected via the via hole 11 on the GaAs semiconductor substrate 2 connected to the ground pad 10. Other configurations are the same as those in FIG.

  As shown in FIG. 4, a part of the ground of the circuit on the Si semiconductor chip 1 is connected to the mounting ground 4 different from the mounting ground 3 of the Si semiconductor chip 1 through the ground pad 10 and the via hole 11 on the GaAs semiconductor chip 2. To reduce the area of the mounting ground 3 of the Si semiconductor chip 1 and enable the miniaturization of the semiconductor module.

  Further, as shown in FIG. 4, by connecting the ground of the analog circuit on the Si semiconductor chip 1 to the mounting ground 4 via the ground pad 10 and the via hole 11 on the GaAs semiconductor chip 2, the inductance between the ground terminal and the ground. The components can be reduced and high frequency characteristics such as gain characteristics can be improved.

  Also, as shown in FIG. 4, at least the digital circuit ground on the Si semiconductor chip 1 is connected to the mounting ground 3, and the grounds of other circuits on the Si semiconductor chip 1 are connected to the mounting ground 4. The analog circuit can be stably operated without supplying unnecessary signals from the digital circuit to the analog circuit.

  Note that FIG. 4 shown in the fourth embodiment of the present invention is one configuration example, and the number and arrangement of pads on the semiconductor chip are not limited to this and have the same effect.

  FIG. 4 shown in the fourth embodiment of the present invention shows an example of a Si semiconductor chip as a semiconductor chip having no via hole structure and an example of a GaAs semiconductor chip as a semiconductor chip having a via hole structure. For example, even if a semiconductor chip such as GaN is used as the semiconductor chip having a via hole structure, the same effect is obtained.

  FIG. 4 shown in the fourth embodiment of the present invention shows an example of one GaAs semiconductor chip. However, as in the second embodiment of the present invention, if a plurality of semiconductor chips having via holes are mounted, It also has the same effect as Embodiment 2 of the present invention. In that case, the semiconductor chip having a via hole may be a semiconductor chip such as GaN, or GaAs and GaN may be mixed.

  FIG. 4 shown in the fourth embodiment of the present invention shows an example in which the Si semiconductor chip and the GaAs semiconductor chip are mounted on the mounting ground plane on the package, respectively, as in the third embodiment of the present invention. If the ground pad of the Si semiconductor substrate and the ground pad connected to the via hole of the GaAs semiconductor substrate are connected by flip chip mounting, the same effect as that of the third embodiment of the present invention is obtained.

  In the above embodiment, the first semiconductor chip and the second semiconductor chip are mounted on the substrate. However, so as to enclose at least one of the first semiconductor chip or the second semiconductor chip, A lid may be provided on the substrate. Further, at least one of the one semiconductor chip or the second semiconductor chip may be molded with resin or the like and mounted on the substrate.

1 Si semiconductor chip, 2 GaAs semiconductor chip, 3 mounting ground plane, 4 mounting ground plane, 5 signal line, 6 ground pad, 7 ground connection wire, 8 ground pad, 9 wire, 10 ground pad, 11 via hole, 12 ground pad , 13 Ground connection wire, 14 Signal pad, 15 Signal connection wire, 16 Signal connection wire, 17 Signal pad, 20 Substrate, 21 GaAs semiconductor chip, 22 Mounting ground plane, 31 Ground plane, 32 Digital circuit, 33 Analog circuit, 101 Si semiconductor chip, 102 GaAs semiconductor chip, 103 mounting ground plane, 104 signal line, 105 ground pad, 106 ground connection wire, 107 via hole, 108 ground pad, 109 ground connection wire, 110 signal pads, 111 signal connection wires, 112 signal pads, 113 signal connection wires

Claims (5)

A substrate,
A first semiconductor chip having a first ground pattern and a second ground pattern;
A second semiconductor chip having a via hole;
A first ground plane provided on the substrate and connected to the first ground pattern;
A second ground surface provided on the substrate separately from the first ground surface and connected to the via hole;
Connection means for electrically connecting the second ground pattern and the via hole;
A semiconductor module comprising:   The semiconductor module according to claim 1, wherein the semiconductor module includes a plurality of the second semiconductor chips and the second ground planes. An analog circuit and a digital circuit are mounted on the first semiconductor chip,
The first ground pattern is a ground of the digital circuit;
The semiconductor module according to claim 1, wherein the second ground pattern is a ground of the analog circuit.   The semiconductor module according to claim 1, wherein the connecting means is a wire.   4. The semiconductor module according to claim 1, wherein the connecting means is a flip chip mounting bump.

Images