JP2015077672A - Perforation hole formation device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a perforation hole formation device in which a crack is hardly generated in a perforation hole.SOLUTION: A perforation hole formation device includes a laser light source which emits a laser beam toward a first surface of an insulation substrate, a needle-like first electrode which is arranged at the first surface side of the insulation substrate and a second electrode which is arranged at a second surface side of the insulation substrate, a DC high voltage power supply which generates electric discharge between the first and the second electrodes, and a shielding plate. When a perforation hole which is already formed in the insulation substrate is named as an existing perforation hole, the position at which the existing perforation hole is formed is named as an existing perforation hole formation position, a perforation hole which is to be formed next in the insulation substrate is named as a target perforation hole, and the position at which the target perforation hole is to be formed is named as a target perforation hole formation position, the shielding plate is arranged to be interposed between the tip of the first electrode and the existing perforation hole, the distance dbetween the position of which and the tip of the first electrode satisfies a relationship equation d≤d, supposing the distance between the tip of the first electrode and the target perforation hole formation position as d.

Description

  The present invention relates to an apparatus for forming a through hole in an insulating substrate using laser light.

  Conventionally, a technique for forming a through hole in an insulating substrate by irradiating the insulating substrate with laser light from a laser light source is known.

  Recently, a technique for making a through hole in an insulating substrate using a laser melting type discharge removing technique has been disclosed (for example, Patent Document 1). In this method, the through hole can be formed in the insulating substrate by combining the laser beam irradiation and the interelectrode discharge phenomenon.

International Publication No. WO2011 / 038788

  As described above, in the laser melting type discharge removal technique, after the insulating substrate is melted by laser light irradiation, the insulating material melted by the interelectrode discharge phenomenon is removed, and a through hole can be formed in the insulating substrate.

  Here, in the conventional laser melting type discharge removal method, there is often a problem that no discharge occurs at an appropriate place in the discharge after the laser light irradiation. For example, when a laser beam is irradiated to the through hole formation target position and an electric discharge is generated at the through hole formation target position by the inter-electrode discharge, the discharge is not generated at the through hole formation target position and is already formed. Discharge may occur through the formed through hole (existing through hole). When such a phenomenon occurs, there is a problem in that excess energy is input to the already formed through hole, and a risk that a crack is generated in the already formed through hole is increased.

  This invention is made | formed in view of such a background, and an object of this invention is to provide the through-hole formation apparatus which can generate discharge in a desired through-hole formation target position.

In the present invention,
A laser light source for irradiating a laser beam toward the first surface of the insulating substrate having the first and second surfaces;
A needle-like first electrode disposed on the first surface side of the insulating substrate and a second electrode disposed on the second surface side of the insulating substrate;
A direct-current high-voltage power source for generating a discharge between the first and second electrodes;
A shielding plate;
Have
A through-hole already formed in the insulating substrate is referred to as an existing through-hole, a position where the existing through-hole is formed is referred to as an existing through-hole forming position, and a through-hole formed next in the insulating substrate is targeted. When referred to as a through hole, the position where the target through hole is formed is referred to as the target through hole formation position,
The shielding plate has a distance d _a between the tip of the first electrode and the existing through hole forming position, where _dt is a distance between the tip of the first electrode and the target through hole forming position. Is provided so as to be interposed between the existing through hole satisfying the relational expression d _a ≦ _dt and the tip of the first electrode.

  Here, in the through hole forming apparatus according to the present invention, the position of the shielding plate may be fixed with respect to the first electrode.

  In the through hole forming apparatus according to the present invention, the shielding plate may have a single opening hole, and the discharge may be generated through the opening hole.

  Moreover, the through-hole formation apparatus by this invention WHEREIN: The said shielding board may have thickness of the range of 100 micrometers-2 mm.

  Moreover, the through-hole formation apparatus by this invention WHEREIN: The said shielding board may be comprised with resin, a ceramic, or glass.

  In the through hole forming apparatus according to the present invention, the insulating substrate may be a glass substrate.

  In the through hole forming apparatus according to the present invention, the second electrode may be substantially plate-shaped.

  In the through-hole forming apparatus according to the present invention, the minimum value of the center-to-center distance between the target through-hole forming position and the existing through-hole forming position may be in the range of 50 μm to 500 μm.

  In the present invention, it is possible to provide a through-hole forming apparatus capable of generating discharge at a desired through-hole forming target position.

It is the figure which showed schematically an example of the structure of the laser melting type electric discharge removal apparatus. It is sectional drawing which showed typically the mode of the vicinity of the insulated substrate at the time of discharging using a laser melting type discharge removal apparatus. It is sectional drawing which showed typically the mode of the vicinity of the insulated substrate at the time of discharging using the through-hole processing apparatus by this invention. It is the figure which showed schematically the structure of the through-hole processing apparatus by one Example of this invention. It is the figure which showed typically the mode at the time of forming a 1st through-hole using the through-hole processing apparatus by one Example of this invention. It is the figure which showed typically the mode at the time of forming a 2nd through-hole using the through-hole processing apparatus by one Example of this invention. It is the figure which showed schematically the structure of another through-hole processing apparatus by one Example of this invention.

  Hereinafter, the present invention will be described with reference to the drawings.

(About laser melting discharge removal technology)
In order to better understand the present invention, first, a laser melting type discharge removing technique will be briefly described with reference to FIG.

  FIG. 1 schematically shows an example of the configuration of a general laser melting type discharge removing apparatus used in the laser melting type discharge removing technique.

  Here, in this application, “laser melting type discharge removal technology” is a technology in which an insulating substrate is melted by laser light irradiation, and then the insulating material melted by an interelectrode discharge phenomenon is removed to form a through hole in the insulating substrate. Means.

  As shown in FIG. 1, the laser melting type discharge removing apparatus 100 includes a laser light source 110, a DC high-voltage power supply 125, a first electrode 140, and a second electrode 145.

  The laser light source 110 has a role of irradiating the laser beam 113 toward the insulating substrate 190 to be processed.

  The first electrode 140 and the second electrode 145 are electrically connected to the conductors 150 and 155, respectively, and these conductors 150 and 155 are connected to the DC high-voltage power source 125.

  The first electrode 140 has a needle shape and is disposed away from the insulating substrate 190. The second electrode 145 has a substantially flat plate shape and is disposed immediately below the insulating substrate 190 so as to be in contact with the insulating substrate 190. The second electrode 145 can also serve as a stage on which the insulating substrate 190 is placed.

  When a plurality of through holes are formed in the insulating substrate 190 using such a laser melting type electric discharge removing apparatus 100, the insulating substrate 190 is first disposed between the electrodes 140 and 145. Further, the insulating substrate 190 is disposed at a predetermined position by moving the stage (which may be the second electrode 145) in the horizontal direction.

  Next, laser light 113 is irradiated from the laser light source 110 toward the insulating substrate 190. The laser beam 113 is applied to the irradiation region 183 of the insulating substrate 190.

  As a result, the temperature of the irradiation region 183 of the insulating substrate 190 rises locally, and a melted portion is formed immediately below.

  Next, a DC high voltage is applied between the electrodes 140 and 145 using the DC high-voltage power supply 125. Thereby, discharge occurs between the electrodes 140 and 145. Discharge tends to occur through the irradiated region 183, i.e., the melt. Due to the occurrence of electric discharge, the melted portion becomes the through hole 185.

  Next, the stage is moved in the horizontal direction, and the insulating substrate 190 is disposed at a predetermined location. Thereafter, the second through hole is formed by the same process.

  By repeating such steps, a plurality of through holes can be formed in the insulating substrate 190.

  Here, in such a laser melting type discharge removal method, there is often a problem that no discharge occurs at an appropriate place (hereinafter also referred to as “erroneous discharge”) at the time of discharge after laser light irradiation.

  Such an erroneous discharge will be described in detail with reference to FIG. FIG. 2 schematically shows a cross-sectional state of the insulating substrate during the discharge treatment in the laser melting type discharge removing method.

  As shown in FIG. 2, the insulating substrate 290 has a first surface 292 and a second surface 294. The first surface 292 of the insulating substrate 290 is a surface on the side irradiated with laser light (not shown) (that is, the side close to the first electrode 240), and the second surface 294 of the insulating substrate 290 is The surface on the side close to the second electrode 245. Note that the first electrode 240 is a needle electrode, and the second electrode 245 is a plate electrode.

  In the insulating substrate 290, the first through hole 285a is already formed at the first through hole forming position 283a.

  Here, a case where the second through hole 285t is formed at the second through hole forming position 283t of the insulating substrate 290 is considered.

  In this case, first, laser light is irradiated to the second through-hole forming position 283t of the insulating substrate 290. Next, a direct current high voltage is applied between the first electrode 240 and the second electrode 245 in order to generate a discharge at the second through hole forming position 283t.

  However, at this time, discharge (erroneous discharge) may occur not through the second through-hole forming position 283t but through the first through-hole forming position 283a.

In particular, the erroneous discharge is caused by the first penetration of the insulating substrate 290 from the tip of the first electrode 240 more than the distance _dt from the tip of the first electrode 240 to the second through hole forming position 283t of the insulating substrate 290. It tends to occur when towards the distance d _a to the hole forming position 283a becomes closer. This is because in such a situation, when the discharge current reaches from the first electrode 240 to the second electrode 245, it tends to flow through the first through hole forming position 283a of the insulating substrate 290.

  Note that when such an erroneous discharge occurs, the first through hole 285a receives at least two discharges. For this reason, there exists a problem that possibility that a crack will arise in the 1st through-hole 285a increases.

On the other hand, in the present invention, a laser light source that irradiates laser light toward the first surface of the insulating substrate having the first and second surfaces;
A needle-like first electrode disposed on the first surface side of the insulating substrate and a second electrode disposed on the second surface side of the insulating substrate;
A direct-current high-voltage power source for generating a discharge between the first and second electrodes;
A shielding plate;
Have
A through-hole already formed in the insulating substrate is referred to as an existing through-hole, a position where the existing through-hole is formed is referred to as an existing through-hole forming position, and a through-hole formed next in the insulating substrate is targeted. When referred to as a through hole, the position where the target through hole is formed is referred to as the target through hole formation position,
The shielding plate has a distance d _a between the tip of the first electrode and the existing through hole forming position, where _dt is a distance between the tip of the first electrode and the target through hole forming position. Is provided so as to be interposed between the existing through hole satisfying the relational expression d _a ≦ _dt and the tip of the first electrode.

  When such a through-hole forming device is used, the presence of the shielding plate can significantly suppress the erroneous discharge as described above.

  The effect of this shielding plate will be described in more detail with reference to FIG.

  FIG. 3 schematically shows a cross section of an insulating substrate when performing a discharge treatment using a through hole forming apparatus according to an embodiment of the present invention.

In the following description, a through hole already formed in the insulating substrate is referred to as an “existing through hole”, and a position where the “existing through hole” is formed is referred to as an “existing through hole forming position”. . Further, the through hole formed next in the insulating substrate is referred to as a “target through hole”, and a position where the “target through hole” is formed is referred to as a “target through hole forming position”. Further, the distance between the tip of the first electrode and the existing through-hole forming position is defined as _da, and the distance between the tip of the first electrode and the target through-hole forming position is defined as _dt .

  As shown in FIG. 3, the insulating substrate 390 has a first surface 392 and a second surface 394. The first surface 392 of the insulating substrate 390 is a surface irradiated with laser light (not shown) (that is, the side close to the first electrode 340), and the second surface 394 of the insulating substrate 390 is The surface on the side close to the second electrode 345. Note that the first electrode 340 is a needle electrode, and the second electrode 345 is a plate electrode.

  In the insulating substrate 390, a through-hole 385a is formed at a through-hole forming position 383a. In the example of FIG. 3, only one existing through-hole forming position 383a and one existing through-hole 385a are shown, but a plurality of existing through-hole forming positions 383a and existing through-holes 385a may exist.

Here, in FIG. 3, when viewed from the direction perpendicular to the paper surface (that is, the side surface direction of the insulating substrate 290 or the Y direction), the height level of the tip of the first electrode 340 and the height level of the insulating substrate 390 are shown. Between them, a shielding plate 360 is arranged. The shielding plate 360 is arranged so as to be interposed between and all existing through hole 385a at the position satisfying the relationship d _a ≦ d _t, and the tip of the first electrode 340.

For example, in the example of FIG. 3, since the relational expression d _a ≦ _dt is established between the existing through-hole forming position 383a and the target through-hole forming position 383t, the tip of the first electrode 340 and the existing through-hole forming position A shielding plate 360 is disposed between 383a. That is, the space above the existing through-hole forming position 383 a that satisfies the relational expression d _a ≦ _dt is electrically shielded by the shielding plate 360.

In such a configuration, when the discharge is generated between the first electrode 340 and the second electrode 345 in order to form the target through-hole 385t at the target through-hole forming position 383t, the target target through-hole is formed. It is possible to generate a discharge at the formation position 383t. During discharge, wherein the relationship d _a ≦ d line connecting the tip of the already through hole forming positions 383a and first electrode 340 satisfying _t, because the shield plate 360 is present.

  Therefore, in the configuration of such a through-hole forming apparatus, the conventional problem that discharge (erroneous discharge) occurs at the existing through-hole forming position 383a instead of the target through-hole forming position 383t is significantly avoided or It becomes possible to suppress. This also makes it possible to significantly suppress the possibility of cracks in the through holes.

(About the through hole forming apparatus according to one embodiment of the present invention)
Next, with reference to FIGS. 4-6, the through-hole formation apparatus by one Example of this invention is demonstrated.

  FIG. 4 schematically shows a configuration of a through hole forming apparatus (hereinafter referred to as “first through hole forming apparatus”) according to an embodiment of the present invention.

  The first through-hole forming apparatus 400 shown in FIG. 4 is an apparatus that can form a plurality of through-holes in an insulating substrate using the “discharge assisting laser hole processing method”.

  Here, the “discharge assist type laser hole processing method (technique)” means that through holes are formed in the irradiation region of the insulating substrate by laser light irradiation to the insulating substrate, as shown below, and then the interelectrode discharge phenomenon, It means a general term for techniques for adjusting the shape of the through hole. The adjustment of the hole shape means that necking that occurs when a plurality of through holes are formed in the insulating substrate by laser light irradiation is reduced. Here, “necking” means a narrowed portion that can be formed in the through hole after laser processing.

  As shown in FIG. 4, the first through-hole forming device 400 includes a laser light source 410, a DC high voltage power source 425, a first electrode 440 and a second electrode 445.

  The laser light source 410 irradiates a laser beam 413 toward the insulating substrate 490 to be processed.

  The first electrode 440 and the second electrode 445 are electrically connected to conductors 450 and 455, respectively, and these conductors 450 and 455 are connected to a DC high voltage power source 425.

  In the example of FIG. 4, the first electrode 440 and the second electrode 445 are different in shape and arrangement form. That is, the first electrode 440 has a needle shape and is arranged away from the insulating substrate 490. On the other hand, the second electrode 445 has a substantially flat plate shape and is disposed immediately below the insulating substrate 490 so as to be in contact with the insulating substrate 490. The second electrode 445 can also function as a stage on which the insulating substrate 490 is placed.

  However, this is merely an example, and for example, the second electrode 445 may be disposed on the bottom surface side of the insulating substrate 490 and separated from the insulating substrate 490. Further, the second electrode 445 may have a needle shape similar to that of the first electrode 440. In this case, a set of electrode pairs is configured between the first electrode 440 and the second electrode at a position facing each other with the insulating substrate 490 interposed therebetween.

  Furthermore, the first through-hole forming device 400 includes a shielding plate 460. The shielding plate 460 is arranged to have a height level between the tip of the first electrode 440 and the insulating substrate 490 when viewed from the side surface direction of the insulating substrate 490.

  Although not shown in FIG. 4, the apparatus 400 may further include a high frequency high voltage power source. The purpose of installing the high-frequency high-voltage power supply is to reduce the temperature of the through-hole portion of the insulating substrate 490 and the vicinity thereof until the DC discharge is started between the first and second electrodes 440 and 445. It is to suppress. That is, by applying a high-frequency high voltage to the insulating substrate 490 using a high-frequency high-voltage power supply, the high-temperature state of the through-hole portion of the insulating substrate 490 heated by the irradiation with the laser light 413 is reliably ensured until the discharge starts. Can be maintained. However, the installation of the high-frequency and high-voltage power supply is optional.

  5 to 6 show a state in which a plurality of through holes are formed in an insulating substrate using the first through hole forming apparatus 400 shown in FIG. For the sake of clarity, in FIG. 5 and FIG. 6, the same members as those shown in FIG. 4 are denoted by the reference numerals shown in FIG.

  FIG. 5 shows a state (first stage) when the first through hole (first through hole) is formed in the insulating substrate 490 using the first through hole forming apparatus 400.

  In this case, first, the insulating substrate 490 is disposed between the electrodes 440 and 445. The insulating substrate 490 may be a glass substrate. Furthermore, the insulating substrate 490 is disposed at a predetermined position by moving the second electrode 445 (or a separate stage) in the horizontal direction.

  Next, laser light 413 is irradiated from the laser light source 410 toward the insulating substrate 490. As a result, the temperature of the first irradiation region of the laser beam 413 on the insulating substrate 490 is locally increased, and the insulating material is sublimated, whereby the first through hole 485-1 is formed. The place where the first through hole 485-1 is formed is referred to as a “first through hole forming position 483-1”.

  After irradiation with the laser light 413, a DC high voltage is applied between the first electrode 440 and the second electrode 445 using a DC high voltage power source 425. Thereby, discharge occurs between the electrodes 440 and 445. Discharge tends to occur through the first through hole 485-1. This is because at this position, the resistance is lower than the other parts.

  In the first step, the position of the shielding plate 460 at the time of occurrence of discharge is not particularly limited. This is because in the first step, there is no existing through hole yet, and no erroneous discharge occurs. Therefore, the shielding plate 460 may be disposed at any position as long as it does not disturb the discharge at the first through hole forming position 483-1.

  Due to the occurrence of discharge, the shape of the first through hole 485-1 is adjusted.

  Through the above steps, the first through hole 485-1 is formed at the first through hole forming position 483-1 of the insulating substrate 490.

  Next, a second through hole is formed by the same operation.

  FIG. 6 shows a state (second stage) when the second through-hole is formed in the insulating substrate 490 using the first through-hole forming apparatus 400.

  In this case, the second electrode 445 (or a separate stage) is moved in the horizontal direction, and the insulating substrate 490 is disposed at a predetermined location.

  Next, laser light 413 is irradiated from the laser light source 410 toward the second irradiation region of the insulating substrate 490. As a result, the temperature of the second irradiation region of the insulating substrate 490 is locally increased, so that the insulating material is sublimated, and the second through hole 485-2 is formed here. The place where the second through hole 485-2 is formed is referred to as a “second through hole forming position 483-2”.

  After irradiation with the laser beam 113, a DC high voltage is applied between the first electrode 440 and the second electrode 445 using a DC high voltage power source 425.

Here, the tip of the first electrode 440 of the previous discharge and the distance between the first through hole forming positions 483-1 and d _1, the tip and a second through-hole forming position of the first electrode 440 483 the distance between -2 and _{d 2.} When the distance between the _two satisfies the relationship of d ₁ > d ₂ , the position of the shielding plate 460 is not particularly limited.

However, as shown in FIG. 6, when the distance between the _two satisfies the relationship of d ₁ ≦ d ₂ , the shielding plate 460 is located between the tip of the first electrode 440 and the first through hole forming position 483-1. It arrange | positions so that it may interpose. For example, the shielding plate 460 is disposed so as to divide a straight line connecting the tip of the first electrode 440 and the first through-hole forming position 483-1.

  When a discharge is generated between the electrodes 440 and 445 with the shielding plate 460 arranged in this manner, the discharge is generated via the second through hole 485-2 as intended. Accordingly, erroneous discharge is avoided.

  Due to the occurrence of discharge, the shape of the second through hole 485-2 is adjusted.

  Thereafter, by the same operation, the third through hole 485-3 is formed at the third through hole forming position 483-3 (third stage), and the fourth through hole is formed at the fourth through hole forming position 483-4. Through-holes 485-4 are formed (fourth stage), and so on.

  In each stage except the first stage, the minimum distance between the center of the existing through-hole formation position and the target through-hole formation position is not particularly limited, but is, for example, in the range of 50 μm to 500 μm.

Here, at the time of discharging at each stage, the shielding plate 460 is configured such that the distance d _a between the already formed through hole formed up to the previous stage and the tip of the first electrode 440, the target through hole forming position, between the distance d _t between the tip of the first electrode 440, as for all existing holes as holds true relationship d _a ≦ d _t, the tip of the first electrode 440 with such previously through It arrange | positions so that it may interpose between holes.

  In such a method, discharge can be reliably generated in the target through-hole at each stage, and erroneous discharge can be significantly suppressed. This also makes it possible to obtain an insulating substrate in which appropriate through holes with few cracks are formed at each through hole forming position.

(About shielding plate)
Next, the structure of the shielding plate that can be used in the through hole machining apparatus according to an embodiment of the present invention will be described. For the sake of clarity, in the following description, the reference numerals shown in FIG. 4 are used when describing each member.

  The shielding plate 460 may be made of any material as long as it is an insulator. The shielding plate 460 may be, for example, resin, ceramic, or glass.

  Further, the thickness of the shielding plate 460 is not particularly limited. However, the shielding plate 460 preferably has a thickness that can be interposed between the tip of the first electrode 440 and the insulating substrate 490 to be processed. The shielding plate 460 may have a thickness in the range of 100 μm to 2 mm, for example.

  The position of the shielding plate 460 may be fixed with respect to the first electrode 440. In this case, when the first electrode 440 is moved with respect to the insulating substrate 490, the shielding plate 460 also moves following the first electrode. Therefore, the first electrode 440, the insulating substrate 490, and the shielding plate 460 are moved. It becomes easy to align the three members.

(About another through-hole forming apparatus according to an embodiment of the present invention)
Next, with reference to FIG. 7, another through hole forming apparatus (referred to as “second through hole forming apparatus”) according to an embodiment of the present invention will be described.

  FIG. 7 shows a second through-hole forming device.

  As shown in FIG. 7, the second through hole processing apparatus 700 includes a laser light source 710, a direct current high voltage power source 725, a first electrode 740, a second electrode 745, and a shielding plate 760. The role of these members is the same as that of the first through-hole forming device 400 described above.

  However, this through-hole processing apparatus 700 is different from the first through-hole forming apparatus 400 described above in that the shielding plate 760 has a single opening hole 765.

  Here, the shape and size of the opening hole 765 of the shielding plate 760 are not particularly limited. The shape of the opening hole 765 may be, for example, a circle, an ellipse, a rectangle, or a square. Moreover, although the maximum dimension of the opening hole 765 changes also with the space | interval of through-holes, the range of 100 micrometers-1000 micrometers may be sufficient, for example.

  When such a through-hole processing apparatus 700 is used, electric discharge can be generated only through the opening hole 765 of the shielding plate 760. Therefore, for example, when the target through hole 785t is formed at the target through hole forming position 783t of the insulating substrate 790, the shielding plate 760 connects the tip of the first electrode 740 and the target through hole forming position 783t during discharge. What is necessary is just to arrange | position so that the opening hole 765 of the shielding board 760 may be arrange | positioned on a straight line.

Thus, already the through holes 785a in the existing through hole forming positions 783a satisfying the relationship _{d a} ≦ _{d t} is the shielding plate 760, will be shielded from the inevitably first electrode 740.

  Therefore, in the second through-hole processing apparatus 700, the occurrence of erroneous discharge can be further reduced.

  Further, when such a shielding plate 760 is used, as described above, the shielding plate 760 is arranged such that the opening hole 765 is arranged on a straight line connecting the tip of the first electrode 740 and the target through-hole forming position 783t. Should be arranged. For this reason, in the second through-hole processing apparatus 700, it is possible to determine the appropriate position of the shielding plate 760 with respect to the insulating substrate 790 and the first electrode 740, relatively easily.

  The through hole forming apparatus according to one embodiment of the present invention has been described above using the through hole forming apparatuses 400 and 700 shown in FIGS. 4 and 7 as examples. However, it should be noted that these descriptions are merely examples, and the present invention is not limited to these configurations.

  The present invention can be used for a technique for forming a through hole in an insulating substrate such as a glass substrate.

DESCRIPTION OF SYMBOLS 100 Laser melting-type discharge removal apparatus 110 Laser light source 113 Laser light 125 DC high voltage power supply 140 1st electrode 145 2nd electrode 150, 155 Conductor 183 Irradiation area 185 Through-hole 190 Insulating substrate 240 1st electrode 245 2nd Electrode 283a First through hole forming position 283t Second through hole forming position 285a First through hole 285t Second through hole 290 Insulating substrate 292 First surface 294 Second surface 340 First electrode 345 Second Electrode 360 Shielding plate 383a Existing through-hole formation position 383t Target through-hole formation position 385a Existing through-hole 385t Target through-hole 390 Insulating substrate 392 First surface 394 Second surface 400 First through-hole forming device 410 Laser light source 413 Laser beam 425 DC high voltage power supply 440 First electrode 445 Second Electrode 450, 455 Conductor 460 Shielding plate 483-1, 483-2 Through-hole forming position 485-1, 485-2 Through-hole 490 Insulating substrate 700 Second through-hole forming device 710 Laser light source 725 DC high voltage power source 740 First Electrode 745 Second electrode 750, 755 Conductor 760 Shielding plate 765 Open hole 783a Previous through hole formation position 783t Target through hole formation position 785a Existing through hole 785t Target through hole 790 Insulating substrate

Claims (8)

A laser light source for irradiating a laser beam toward the first surface of the insulating substrate having the first and second surfaces;
A needle-like first electrode disposed on the first surface side of the insulating substrate and a second electrode disposed on the second surface side of the insulating substrate;
A direct-current high-voltage power source for generating a discharge between the first and second electrodes;
A shielding plate;
Have
A through-hole already formed in the insulating substrate is referred to as an existing through-hole, a position where the existing through-hole is formed is referred to as an existing through-hole forming position, and a through-hole formed next in the insulating substrate is targeted. When referred to as a through hole, the position where the target through hole is formed is referred to as the target through hole formation position,
The shielding plate has a distance d _a between the tip of the first electrode and the existing through hole forming position, where _dt is a distance between the tip of the first electrode and the target through hole forming position. Is disposed so as to be interposed between the existing through hole satisfying the relational expression d _a ≦ _dt and the tip of the first electrode.   The through-hole forming device according to claim 1, wherein a position of the shielding plate is fixed with respect to the first electrode.   The through-hole forming device according to claim 1, wherein the shielding plate has a single opening hole, and the discharge is generated through the opening hole.   The through-hole forming device according to claim 1, wherein the shielding plate has a thickness in a range of 100 μm to 2 mm.   The through-hole forming apparatus according to claim 1, wherein the shielding plate is made of resin, ceramic, or glass.   The through-hole forming apparatus according to claim 1, wherein the insulating substrate is a glass substrate.   The through-hole forming device according to claim 1, wherein the second electrode has a substantially plate shape.   The through hole forming apparatus according to any one of claims 1 to 7, wherein a minimum value of a center-to-center distance between the target through hole forming position and the existing through hole forming position is in a range of 50 µm to 500 µm.

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