JP2015072991A - Lead frame and manufacturing method thereof, and semiconductor device using the same - Google Patents

Lead frame and manufacturing method thereof, and semiconductor device using the same Download PDF

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JP2015072991A
JP2015072991A JP2013207451A JP2013207451A JP2015072991A JP 2015072991 A JP2015072991 A JP 2015072991A JP 2013207451 A JP2013207451 A JP 2013207451A JP 2013207451 A JP2013207451 A JP 2013207451A JP 2015072991 A JP2015072991 A JP 2015072991A
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lead frame
dimple
groove
protrusion
die pad
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JP6195771B2 (en
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義節 梶原
Yoshitoki Kajiwara
義節 梶原
靖之 兵藤
Yasuyuki Hyodo
靖之 兵藤
康博 森永
Yasuhiro Morinaga
康博 森永
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Mitsui High Tec Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame and a manufacturing method thereof which can improve adhesion between a mold resin and a dimple, suppress peeling of the mold resin from the lead frame, and furthermore prevent it; and a semiconductor device using the same.SOLUTION: In a lead frame 15, a first groove part 40 whose cross-section inner width contracts toward an opening side 42 is provided in an annular shape in a dimple 14. In the opening side 42, first and second protruding parts 44 and 46 are provided by which an inner peripheral surface 43 and outer peripheral surface 45 of the first groove part 40 respectively protrude toward the outside and inside in a radial direction; and the amount of protrusion of the first protruding part 44 is more than that of the second protruding part 46. A manufacturing method performs: a first press work of forming an annular concave part and forming first and second bulge parts at the inside and outside respectively in a radial direction thereof; and then a second press work of flattening the first and second bulge parts so as to form the first groove part 40, and the first and second protruding parts 44 and 46.

Description

本発明は、リードフレーム及びその製造方法並びにそれを用いた半導体装置に関する。   The present invention relates to a lead frame, a manufacturing method thereof, and a semiconductor device using the lead frame.

電子機器の小型化や薄型化に伴い、ＩＣパッケージの薄型化の要求が高まっており、ＩＣパッケージを形成するモールド樹脂の厚みが薄くなる傾向にある。
このため、リードフレームとモールド樹脂との密着性を向上させモールド樹脂のクラック発生を防止するため、リードフレームに設けられたダイパッドのチップが搭載されていない面に、プレス加工によりディンプル（窪み）を形成していた。
例えば、特許文献１には、ダイパッドに対してプレス加工を２回行い、ディンプルを形成する方法が記載されている。具体的には、１回目のプレス加工で、座屈の支点となる屈曲部を有する下穴をダイパッドに形成し、２回目のプレス加工により、内壁平面を形成すると共に、内壁平面と屈曲部の間で開口部の金属材料を加圧し径方向内側へ流している。
このように、金属材料を径方向内側に流すことで、径方向内側に突出する突起を開口部に形成し、この突起により、モールド樹脂とディンプルとの密着性を高めている。 As electronic devices become smaller and thinner, there is an increasing demand for thinner IC packages, and the mold resin forming the IC package tends to be thinner.
For this reason, in order to improve the adhesion between the lead frame and the mold resin and prevent the occurrence of cracks in the mold resin, dimples (dents) are formed by pressing on the surface of the lead frame where the die pad chip is not mounted. Was forming.
For example, Patent Document 1 describes a method of forming dimples by pressing the die pad twice. Specifically, in the first press work, a pilot hole having a bent portion serving as a fulcrum for buckling is formed in the die pad, and an inner wall plane is formed by the second press work, and the inner wall plane and the bent portion are The metal material in the opening is pressed between them and flows inward in the radial direction.
Thus, by flowing the metal material inward in the radial direction, a protrusion protruding inward in the radial direction is formed in the opening, and this protrusion improves adhesion between the mold resin and the dimple.

特許第３３３９１７３号公報Japanese Patent No. 3339173

しかしながら、形成される突起の突出長さが短い場合、モールド樹脂とディンプルとの密着性が低下してしまう。
そこで、突起の突出長さを長く形成するため、２回目のプレス加工でダイパッドの潰し量を大きくする必要があるが、この場合、１回目のプレス加工で、下穴の屈曲部をより深い位置に形成しなければならない。ここで、屈曲部をより深い位置に形成するため、１回目のプレス加工でダイパッドの潰し量を更に大きくすると、潰された部分の金属材料の逃げ場が制限され、ディンプルの周辺がうねり、ダイパッドに大きな反りが発生してしまうおそれがあった。なお、反りが大きくなると、後工程で反りを直す矯正工程が必要となり、生産性が低下する。 However, when the protruding length of the formed protrusion is short, the adhesion between the mold resin and the dimple is lowered.
Therefore, in order to increase the protrusion length of the protrusion, it is necessary to increase the amount of die pad crushing in the second press work. In this case, the bent portion of the pilot hole is positioned deeper in the first press work. Must be formed. Here, in order to form the bent part at a deeper position, if the die pad is further crushed by the first press work, the escape area of the metal material in the crushed part is limited, the dimple periphery undulates, There was a risk that a large warp would occur. In addition, when a curvature becomes large, the correction process which corrects a curvature by a post process will be needed, and productivity will fall.

本発明はかかる事情に鑑みてなされたもので、モールド樹脂とディンプルとの密着性を向上させ、リードフレームからのモールド樹脂の剥離を抑制、更には防止可能なリードフレーム及びその製造方法並びにそれを用いた半導体装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and improves the adhesion between the mold resin and the dimples, suppresses the peeling of the mold resin from the lead frame, and further prevents the lead frame, its manufacturing method, and An object is to provide a semiconductor device used.

前記目的に沿う第１の発明に係るリードフレームは、リードとダイパッドを有し、前記リード及び前記ダイパッドのいずれか一方又は双方に、モールド樹脂との密着性を向上させるためのディンプルを設けたリードフレームであって、
前記ディンプルには、平面視して環状となって、その断面内幅が、前記ディンプルの底部から開口側へ向けて縮幅する第１の溝部が設けられ、
前記ディンプルの開口側には、前記第１の溝部の内周面が径方向外側へ向けて突出する第１の突出部と、前記第１の溝部の外周面が径方向内側へ向けて突出する第２の突出部がそれぞれ設けられ、かつ、前記第１の突出部の径方向外側への突出量が、前記第２の突出部の径方向内側への突出量より大きい。 A lead frame according to a first aspect of the present invention that has the above object includes a lead and a die pad, and a dimple for improving adhesion to a mold resin is provided on one or both of the lead and the die pad. A frame,
The dimple is provided with a first groove portion that is annular in a plan view and has a cross-sectional inner width that is reduced from the bottom of the dimple toward the opening side,
On the opening side of the dimple, a first protruding portion in which an inner peripheral surface of the first groove portion protrudes radially outward, and an outer peripheral surface of the first groove portion protrudes inward in the radial direction. Each of the second protrusions is provided, and the amount of protrusion of the first protrusions radially outward is greater than the amount of protrusion of the second protrusions radially inward.

第１の発明に係るリードフレームにおいて、対向する前記第１の突出部と前記第２の突出部で形成される隙間を、前記ディンプルの開口側へ向けて拡幅させていることが好ましい。   In the lead frame according to the first aspect of the present invention, it is preferable that a gap formed between the first projecting portion and the second projecting portion facing each other is widened toward the opening side of the dimple.

第１の発明に係るリードフレームにおいて、前記ディンプルの開口側には、更に第２の溝部が設けられ、該第２の溝部の底に、前記第１の溝部と前記第１、第２の突出部が設けられていることが好ましい。   In the lead frame according to the first aspect of the present invention, a second groove is further provided on the opening side of the dimple, and the first groove and the first and second protrusions are formed at the bottom of the second groove. It is preferable that a portion is provided.

前記目的に沿う第２の発明に係るリードフレームの製造方法は、第１の発明に係るリードフレームの製造方法であって、
平面視して環状の凹部を形成すると共に、該凹部の径方向内側に第１の隆起部を、前記凹部の径方向外側に第２の隆起部を、それぞれ形成する第１のプレス加工を行った後、
前記第１、第２の隆起部を潰して、前記第１の溝部を形成すると共に、前記第１、第２の突出部を形成する第２のプレス加工を行う。 A lead frame manufacturing method according to a second invention that meets the above-mentioned object is a lead frame manufacturing method according to the first invention,
A first press working is performed to form an annular recess in plan view and to form a first raised portion radially inward of the recessed portion and a second raised portion radially outward of the recessed portion. After
The first and second raised portions are crushed to form the first groove portion, and the second press working to form the first and second protruding portions is performed.

第２の発明に係るリードフレームの製造方法において、前記第２のプレス加工に使用するパンチには第１の凸部が設けられ、前記第２のプレス加工を行うことで、対向する前記第１の突出部と前記第２の突出部で形成される隙間を、前記ディンプルの開口側へ向けて拡幅させることが好ましい。   In the lead frame manufacturing method according to the second invention, the punch used for the second press working is provided with a first convex portion, and the first press facing the first press working is performed. It is preferable to widen a gap formed by the protrusion and the second protrusion toward the opening side of the dimple.

第２の発明に係るリードフレームの製造方法において、前記第２のプレス加工に使用するパンチには第２の凸部が設けられ、前記第２のプレス加工を行うことで、第２の溝部を形成すると共に、該第２の溝部の底に、前記第１の溝部と前記第１、第２の突出部を形成することが好ましい。   In the lead frame manufacturing method according to the second invention, the punch used for the second press working is provided with a second convex portion, and the second groove is formed by performing the second press working. Preferably, the first groove and the first and second protrusions are formed at the bottom of the second groove.

前記目的に沿う第３の発明に係る半導体装置は、第１の発明に係るリードフレームを用いた半導体装置であって、前記ディンプルには前記モールド樹脂が充填され、前記ダイパッドと、該ダイパッド上に搭載されたチップと、前記リードは、前記モールド樹脂で一体化されている。   According to a third aspect of the present invention, there is provided a semiconductor device using the lead frame according to the first aspect, wherein the dimple is filled with the mold resin, and the die pad and the die pad are disposed on the die pad. The mounted chip and the lead are integrated with the mold resin.

第３の発明に係る半導体装置において、前記ダイパッドの裏面が外部に露出していることが好ましい。   In the semiconductor device according to the third invention, it is preferable that the back surface of the die pad is exposed to the outside.

本発明に係るリードフレーム及びその製造方法並びにそれを用いた半導体装置は、ディンプルに第１の溝部を設け、このディンプルの開口側に第１、第２の突出部を設けているので、モールド樹脂と接するディンプルの表面積が増え、リードフレームに対するモールド樹脂の密着性を向上できる。
ここで、第１の突出部の径方向外側への突出量を、第２の突出部の径方向内側への突出量より大きくするので、第１の突出部により、リードフレームからのモールド樹脂の剥離を抑制、更には防止できる。 Since the lead frame, the manufacturing method thereof, and the semiconductor device using the same according to the present invention are provided with the first groove on the dimple and the first and second protrusions on the opening side of the dimple, The surface area of the dimple in contact with the lead frame can be increased, and the adhesion of the mold resin to the lead frame can be improved.
Here, since the protruding amount of the first protruding portion to the radially outer side is larger than the protruding amount of the second protruding portion to the radially inner side, the first protruding portion causes the mold resin from the lead frame to move. Peeling can be suppressed and further prevented.

また、本発明に係るリードフレームにおいて、対向する第１の突出部と第２の突出部で形成される隙間を、ディンプルの開口側へ向けて拡幅させる場合、モールド樹脂と接するディンプルの表面積を更に増やすことができ、リードフレームに対するモールド樹脂の密着性を更に向上できる。なお、上記構成により、第１、第２の突出部の各先端を尖らせることもでき、尖らせない（例えば、丸みを帯びた）場合よりも、リードフレームに対するモールド樹脂の密着性を更に向上できる。   Further, in the lead frame according to the present invention, when the gap formed by the first protruding portion and the second protruding portion facing each other is widened toward the dimple opening side, the surface area of the dimple in contact with the mold resin is further increased. The adhesion of the mold resin to the lead frame can be further improved. In addition, with the said structure, each front-end | tip of a 1st, 2nd protrusion part can also be sharpened, and the adhesiveness of the mold resin with respect to a lead frame further improves rather than the case where it is not sharpened (for example, rounded). it can.

更に、ディンプルの開口側に第２の溝部を設け、その底に、第１の溝部と第１、第２の突出部を設ける場合、モールド樹脂と接するディンプルの表面積を更に増やすことができ、リードフレームに対するモールド樹脂の密着性を更に向上できる。
なお、第２の溝部を設けるに際し、第１、第２の突出部は上方から押圧されるため、この押圧に伴う金属材料の移動により、第１、第２の突出部の突出長さを更に長くできる。これにより、モールド樹脂のリードフレームに対する引っ掛かりを更に強めることができ、リードフレームからのモールド樹脂の剥離を更に防止できる。 Further, when the second groove is provided on the opening side of the dimple and the first groove and the first and second protrusions are provided on the bottom thereof, the surface area of the dimple in contact with the mold resin can be further increased. The adhesion of the mold resin to the frame can be further improved.
When the second groove is provided, the first and second protrusions are pressed from above, so that the protrusion lengths of the first and second protrusions are further increased by the movement of the metal material accompanying the pressing. Can be long. As a result, it is possible to further strengthen the mold resin from being caught on the lead frame, and to further prevent the mold resin from being peeled off from the lead frame.

本発明に係るリードフレームの製造方法は、第１のプレス加工によって、平面視して環状の凹部を形成するので、凹部の形成によって移動する金属材料を凹部の径方向内側に移動させて、第１の隆起部を形成できる。これにより、従来のように、リードフレームの表面が反って変形するおそれがなくなる。
なお、凹部を形成するに際し、第１のプレス加工で使用する環状のパンチとして、その内径が押圧側に向かって拡径するパンチを使用する場合、プレス加工を行う部分の金属材料を径方向内側に容易に案内できると共に、パンチ先端部の摩耗も少なくできる。 The lead frame manufacturing method according to the present invention forms an annular recess in plan view by the first pressing, so that the metal material that moves due to the formation of the recess is moved radially inward of the recess, One raised portion can be formed. This eliminates the possibility of warping and deforming the surface of the lead frame as in the prior art.
When forming a recess, when using a punch whose inner diameter expands toward the pressing side as an annular punch used in the first pressing, the metal material of the portion to be pressed is radially inward. Can be easily guided, and wear of the punch tip can be reduced.

ここで、第１の凸部が設けられたパンチを用いて第２のプレス加工を行い、対向する第１の突出部と第２の突出部で形成される隙間を、ディンプルの開口側へ向けて拡幅させる場合、モールド樹脂と接するディンプルの表面積を更に増やすことができる。
なお、上記したように、形成される隙間をディンプルの開口側へ向けて拡幅させることで、第１の溝部へのモールド樹脂の流れ込みを促進することもできる。 Here, the second press working is performed using the punch provided with the first convex portion, and the gap formed by the first projecting portion and the second projecting portion facing each other is directed to the opening side of the dimple. When the width is increased, the surface area of the dimple in contact with the mold resin can be further increased.
As described above, the flow of the mold resin into the first groove can be promoted by widening the formed gap toward the opening side of the dimple.

また、第２の凸部が設けられたパンチを用いて第２のプレス加工を行い、第２の溝部を形成する場合、リードフレームの潰し量を更に多くすることができ、その結果、第１、第２の突出部の各突出長さを更に長くできる。   Further, when the second pressing is performed using the punch provided with the second convex portion to form the second groove portion, the amount of crushing of the lead frame can be further increased. The projecting lengths of the second projecting portions can be further increased.

本発明に係る半導体装置において、ダイパッドにディンプルを設けたリードフレームを用いた場合、ダイパッドはリードフレームの中で最も表面積が大きい部分であるため、リードフレームに対するモールド樹脂の密着性が高められ、半導体装置の信頼性を向上できる。
また、リードにディンプルを設けたリードフレームを用いた場合、リードとモールド樹脂の密着性が高められ、モールド樹脂からのリードの抜けを抑制、更には防止でき、半導体装置の信頼性を向上できる。 In the semiconductor device according to the present invention, when a lead frame having dimples provided on the die pad is used, the die pad is the portion having the largest surface area in the lead frame, so that the adhesion of the mold resin to the lead frame is enhanced, and the semiconductor The reliability of the device can be improved.
In addition, when a lead frame having dimples on the leads is used, the adhesion between the leads and the mold resin can be improved, and the removal of the leads from the mold resin can be suppressed and further prevented, and the reliability of the semiconductor device can be improved.

ここで、ダイパッドの裏面が外部に露出している場合、このタイプの半導体装置の信頼性を向上できる。   Here, when the back surface of the die pad is exposed to the outside, the reliability of this type of semiconductor device can be improved.

（Ａ）は本発明の第１の実施の形態に係る半導体装置の側断面図、（Ｂ）は同半導体装置に用いたリードフレームの底面図である。(A) is a sectional side view of the semiconductor device according to the first embodiment of the present invention, and (B) is a bottom view of a lead frame used in the semiconductor device. 本発明の第２の実施の形態に係る半導体装置の側断面図である。It is a sectional side view of the semiconductor device which concerns on the 2nd Embodiment of this invention. （Ａ）は本発明の第３の実施の形態に係る半導体装置の側断面図、（Ｂ）は同半導体装置に用いたリードフレームの底面図である。(A) is a sectional side view of a semiconductor device according to a third embodiment of the present invention, and (B) is a bottom view of a lead frame used in the semiconductor device. （Ａ）、（Ｂ）はそれぞれ本発明の第１の実施の形態に係るリードフレームに設けたディンプルの平面図、側断面図である。(A) and (B) are a plan view and a side sectional view of a dimple provided in the lead frame according to the first embodiment of the present invention, respectively. （Ａ）、（Ｂ）は同リードフレームの製造方法におけるプレス加工の説明図である。(A), (B) is explanatory drawing of the press work in the manufacturing method of the lead frame. （Ａ）は本発明の第２の実施の形態に係るリードフレームに設けたディンプルの側断面図、（Ｂ）は同リードフレームの製造方法におけるプレス加工の説明図である。(A) is a sectional side view of the dimple provided in the lead frame according to the second embodiment of the present invention, and (B) is an explanatory view of press working in the manufacturing method of the lead frame. （Ａ）は本発明の第３の実施の形態に係るリードフレームに設けたディンプルの側断面図、（Ｂ）は同リードフレームの製造方法におけるプレス加工の説明図である。(A) is a sectional side view of the dimple provided in the lead frame according to the third embodiment of the present invention, and (B) is an explanatory view of press working in the manufacturing method of the lead frame.

続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
図１（Ａ）、（Ｂ）に示すように、本発明の第１の実施の形態に係る半導体装置１０は、リード１１とダイパッド（素子搭載部）１２を有し、このダイパッド１２の裏面側（チップ搭載面の反対側）に、モールド樹脂１３との密着性を向上させるためのディンプル１４を複数設けたリードフレーム１５を用いたものである。 Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
As shown in FIGS. 1A and 1B, the semiconductor device 10 according to the first embodiment of the present invention has a lead 11 and a die pad (element mounting portion) 12, and the back side of the die pad 12. A lead frame 15 provided with a plurality of dimples 14 for improving adhesion to the mold resin 13 (on the side opposite to the chip mounting surface) is used.

ダイパッド１２は、半導体装置１０の中央にあって、その周囲に、ダイパッド１２上に搭載されたチップ（半導体チップ）１６の電極パッド（図示しない）のそれぞれにボンディングワイヤ１７によって連結されたリード１１が配置されている。なお、リードフレーム１５は、リード１１と、ダイパッド１２と、このダイパッド１２を周囲から支持するサポートバー１８と、各リード１１を連結している枠部（図示しない）とを有している。   The die pad 12 is in the center of the semiconductor device 10, and around the lead pad 11 connected to each electrode pad (not shown) of a chip (semiconductor chip) 16 mounted on the die pad 12 by a bonding wire 17. Has been placed. The lead frame 15 includes a lead 11, a die pad 12, a support bar 18 that supports the die pad 12 from the periphery, and a frame portion (not shown) that connects the leads 11.

上記した半導体装置１０は、図１（Ａ）に示すように、ダイパッド１２の裏面側もモールド樹脂（例えば、熱硬化性樹脂）１３で覆われている。
このため、各ディンプル１４にもモールド樹脂１３が充填され、ダイパッド１２と、このダイパッド１２上に搭載されたチップ１６と、リード１１と、サポートバー１８が、モールド樹脂１３で一体化されている。 In the semiconductor device 10 described above, the back surface side of the die pad 12 is also covered with a mold resin (for example, thermosetting resin) 13 as shown in FIG.
Therefore, each dimple 14 is filled with the mold resin 13, and the die pad 12, the chip 16 mounted on the die pad 12, the lead 11, and the support bar 18 are integrated with the mold resin 13.

次に、図２を参照しながら、本発明の第２の実施の形態に係る半導体装置２０について説明するが、前記した半導体装置１０と同一部材には同一番号を付し、詳しい説明を省略する。
半導体装置２０は、リード１１とダイパッド（素子搭載部）２１を有し、このダイパッド１２の表面側（チップ搭載面側）に、モールド樹脂（例えば、熱硬化性樹脂）２２との密着性を向上させるためのディンプル１４を複数設けたリードフレーム２３を用いたものである。 Next, the semiconductor device 20 according to the second embodiment of the present invention will be described with reference to FIG. 2. However, the same members as those of the semiconductor device 10 described above are denoted by the same reference numerals, and detailed description thereof is omitted. .
The semiconductor device 20 includes a lead 11 and a die pad (element mounting portion) 21, and improves adhesion to a mold resin (for example, thermosetting resin) 22 on the surface side (chip mounting surface side) of the die pad 12. A lead frame 23 provided with a plurality of dimples 14 is used.

ダイパッド２１は、半導体装置２０の中央にあって、ダイパッド１２上に搭載されたチップ１６の周辺部（チップ搭載面側の周辺部）に、ディンプル１４が設けられている。
上記した半導体装置２０は、図２に示すように、チップ１６の搭載領域に対応したダイパッド２１の裏面側を除く部分が、モールド樹脂２２で覆われている。このため、ダイパッド２１の裏面が外部に露出した状態で、各ディンプル１４にもモールド樹脂２２が充填され、ダイパッド２１と、このダイパッド２１上に搭載されたチップ１６と、リード１１と、サポートバー（図示しない）が、モールド樹脂２２で一体化されている。 The die pad 21 is in the center of the semiconductor device 20, and dimples 14 are provided in the peripheral portion of the chip 16 mounted on the die pad 12 (peripheral portion on the chip mounting surface side).
As shown in FIG. 2, the semiconductor device 20 described above is covered with the mold resin 22 except for the back side of the die pad 21 corresponding to the mounting area of the chip 16. Therefore, the mold resin 22 is filled in each dimple 14 with the back surface of the die pad 21 exposed to the outside, and the die pad 21, the chip 16 mounted on the die pad 21, the lead 11, and the support bar ( (Not shown) are integrated with the mold resin 22.

図３（Ａ）、（Ｂ）を参照しながら、本発明の第３の実施の形態に係る半導体装置３０について説明するが、前記した半導体装置１０と同一部材には同一番号を付し、詳しい説明を省略する。
半導体装置３０は、リード３１とダイパッド（素子搭載部）３２を有し、このリード３１に、モールド樹脂（例えば、熱硬化性樹脂）３３との密着性を向上させるためのディンプル１４を複数設けたリードフレーム３４を用いたものである。 The semiconductor device 30 according to the third embodiment of the present invention will be described with reference to FIGS. 3A and 3B. The same members as those of the semiconductor device 10 described above are denoted by the same reference numerals and are described in detail. Description is omitted.
The semiconductor device 30 has a lead 31 and a die pad (element mounting portion) 32, and a plurality of dimples 14 for improving adhesion to a mold resin (for example, thermosetting resin) 33 are provided on the lead 31. A lead frame 34 is used.

ダイパッド３２は、半導体装置３０の中央にあって、その周囲に、ダイパッド３２上に搭載されたチップ１６の電極パッド（図示しない）のそれぞれにボンディングワイヤ１７によって連結されたリード３１が配置されている。このリード３１の幅広となった部分の裏面側には、ディンプル１４が設けられている。
上記した半導体装置３０は、各ディンプル１４にもモールド樹脂３３が充填され、ダイパッド３２と、このダイパッド３２上に搭載されたチップ１６と、リード３１と、サポートバー１８が、モールド樹脂３３で一体化されている。 The die pad 32 is in the center of the semiconductor device 30, and leads 31 connected to the electrode pads (not shown) of the chip 16 mounted on the die pad 32 by bonding wires 17 are arranged around the die pad 32. . A dimple 14 is provided on the back side of the widened portion of the lead 31.
In the semiconductor device 30 described above, each dimple 14 is also filled with the mold resin 33, and the die pad 32, the chip 16 mounted on the die pad 32, the lead 31, and the support bar 18 are integrated with the mold resin 33. Has been.

以上に示した第１〜第３の発明の実施の形態に係る半導体装置１０、２０、３０に用いたリードフレーム１５、２３、３４は、例えば、銅又は銅合金等の金属製シートを打ち抜くことで形成されている。なお、金属製シートは、導電材料であれば特に限定されるものではなく、例えば、ＦｅＮｉ合金等も使用できる。
また、リードフレーム１５（リードフレーム２３、３４も同様）の厚み（金属製シートの厚み）も、特に限定されるものではないが、例えば、８０〜５００μｍ程度である。 The lead frames 15, 23, 34 used in the semiconductor devices 10, 20, 30 according to the first to third embodiments described above are formed by punching a metal sheet such as copper or a copper alloy, for example. It is formed with. The metal sheet is not particularly limited as long as it is a conductive material. For example, a FeNi alloy or the like can be used.
Further, the thickness of the lead frame 15 (the same applies to the lead frames 23 and 34) (the thickness of the metal sheet) is not particularly limited, but is, for example, about 80 to 500 μm.

ここで、図４（Ａ）、（Ｂ）を参照しながら、本発明の第１の実施の形態に係るリードフレーム１５に設けたディンプル１４について説明する。なお、リードフレーム２３、３４に設けたディンプル１４も同様である。
ディンプル１４は、平面視して環状となって、表面側の外径（開口部の外径）Ｄが、例えば、５０μｍ〜２ｍｍ程度、リードフレーム１５の表面からの深さｄ１が、リードフレーム１５（金属製シート）の厚みの３０〜９０％（好ましくは、下限が５０％、更には７０％、上限が８０％）程度、である。なお、ディンプル１４の平面視した輪郭は、ここでは円形となっているが、環状となっていれば、例えば、楕円形や卵形でもよい。 Here, the dimple 14 provided in the lead frame 15 according to the first embodiment of the present invention will be described with reference to FIGS. 4 (A) and 4 (B). The dimple 14 provided on the lead frames 23 and 34 is the same.
The dimple 14 has an annular shape in plan view, and the outer diameter (outer diameter of the opening) D on the surface side is, for example, about 50 μm to 2 mm, and the depth d1 from the surface of the lead frame 15 is the lead frame 15. It is about 30 to 90% of the thickness of the (metal sheet) (preferably, the lower limit is 50%, further 70%, the upper limit is 80%). Note that the outline of the dimple 14 in plan view is circular here, but may be oval or oval as long as it is circular.

ディンプル１４には、第１の溝部４０が設けられている。
この第１の溝部４０は、図４（Ａ）に示すように、ディンプル１４の形状に合わせて、平面視して環状となっているが、ディンプルの輪郭が上記した楕円形や卵形であれば、この形状に合わせて、楕円形や卵形にすることもできる。
また、第１の溝部４０は、図４（Ｂ）に示すように、その断面内幅Ｗ１が、ディンプル１４の底部４１から開口側４２へ向けて徐々に縮幅している。 The dimple 14 is provided with a first groove 40.
As shown in FIG. 4A, the first groove portion 40 has an annular shape in plan view in accordance with the shape of the dimple 14, but the contour of the dimple may be the above-described ellipse or egg shape. For example, it can be oval or oval to match this shape.
In addition, as shown in FIG. 4B, the first groove portion 40 has an inner width W1 that is gradually reduced from the bottom 41 of the dimple 14 toward the opening 42.

ディンプル１４の開口側４２には、第１の溝部４０の内周面４３が径方向外側へ向けて突出する第１の突出部４４と、第１の溝部４０の外周面４５が径方向内側へ向けて突出する第２の突出部４６が、それぞれ設けられている。なお、第１の突出部４４の径方向外側への突出量Ｘは、第２の突出部４６の径方向内側への突出量Ｙより大きくなっている。
上記した第１の突出部４４の突出量Ｘとは、第１の溝部４０の底位置の内周面を基準として径方向外側への突出長さを意味し、第２の突出部４６の突出量Ｙとは、第１の溝部４０の底位置の外周面を基準として径方向内側への突出長さを意味している。なお、第１の突出部４４の突出量Ｘは、第２の突出部４６の突出量Ｙの例えば、１．０５〜１．５倍程度である。 On the opening side 42 of the dimple 14, a first protruding portion 44 in which an inner peripheral surface 43 of the first groove portion 40 protrudes radially outward, and an outer peripheral surface 45 of the first groove portion 40 radially inward. Second projecting portions 46 projecting toward each other are provided. Note that the protrusion amount X of the first protrusion 44 toward the radially outer side is larger than the protrusion amount Y of the second protrusion 46 toward the radially inner side.
The protrusion amount X of the first protrusion 44 described above means a protrusion length outward in the radial direction with reference to the inner peripheral surface of the bottom position of the first groove 40, and the protrusion of the second protrusion 46. The amount Y means a protruding length inward in the radial direction with reference to the outer peripheral surface of the bottom position of the first groove portion 40. The protrusion amount X of the first protrusion 44 is, for example, about 1.05 to 1.5 times the protrusion amount Y of the second protrusion 46.

続いて、上記した本発明の第１の実施の形態に係るリードフレーム１５の製造方法について説明する。なお、リードフレーム２３、３４の製造方法も、ディンプル１４の形成位置を除いては略同様であるため、ここでは省略する。
まず、前記した金属製シートを打ち抜き、リードフレーム１５を構成するリード１１、ダイパッド１２、サポートバー１８、及び枠部を形成する（図１（Ａ）、（Ｂ）参照）。 Then, the manufacturing method of the lead frame 15 which concerns on the above-mentioned 1st Embodiment of this invention is demonstrated. The manufacturing method of the lead frames 23 and 34 is substantially the same except for the position where the dimples 14 are formed, and is omitted here.
First, the above-described metal sheet is punched to form the lead 11, the die pad 12, the support bar 18, and the frame portion that constitute the lead frame 15 (see FIGS. 1A and 1B).

次に、金属製シートに形成されたリードフレーム１５のダイパッド１２に対して、第１のプレス加工を行う。
このプレス加工では、図５（Ａ）に示す円筒状のパンチ４７を使用する。このパンチ４７は、その軸心方向において、外径が同一であり、押圧側端部の内径が、押圧対象（リードフレーム１５）に向けて拡幅（テーパ状に）している。なお、傾斜角度θは、パンチ４７の端面を基準（０°）として、例えば、２０〜７０°程度である。
これにより、プレス加工を行う部分の金属材料を径方向内側に容易に案内できると共に、パンチ先端部の摩耗も少なくできる。 Next, a first press process is performed on the die pad 12 of the lead frame 15 formed on the metal sheet.
In this press working, a cylindrical punch 47 shown in FIG. 5A is used. The punch 47 has the same outer diameter in the axial direction, and the inner diameter of the end portion on the pressing side is widened (tapered) toward the object to be pressed (lead frame 15). The inclination angle θ is, for example, about 20 to 70 ° with the end face of the punch 47 as a reference (0 °).
Thereby, the metal material of the part to be pressed can be easily guided radially inward, and the wear of the punch tip can be reduced.

なお、上記したパンチ４７の代わりに、その内径が、軸心方向に渡って同一のものを使用することもできる。
上記したプレス加工により、図５（Ａ）に示すように、ダイパッド１２に、平面視して環状の凹部４８を形成できると共に、この凹部４８の径方向内側に第１の隆起部４９を、凹部４８の径方向外側に第２の隆起部５０を、それぞれ形成できる。なお、環状の凹部４８を形成する際、押し潰される領域の金属材料の殆どが、円筒状のパンチ４７の円筒内へ移動するため、第２の隆起部５０の高さに比べ、第１の隆起部４９の高さが高く形成される。 Instead of the punch 47 described above, the punch 47 having the same inner diameter in the axial direction can be used.
5A, the die pad 12 can be formed with an annular concave portion 48 in plan view, and the first raised portion 49 is formed on the radially inner side of the concave portion 48. The second raised portions 50 can be respectively formed on the radially outer side of the 48. When the annular recess 48 is formed, most of the metal material in the area to be crushed moves into the cylinder of the cylindrical punch 47, so that the first bulge 50 has a height higher than that of the second bulge 50. The height of the raised portion 49 is formed high.

続いて、上記した凹部４８と第１、第２の隆起部４９、５０が形成されたダイパッド１２に対して、第２のプレス加工を行う。
このプレス加工では、図５（Ｂ）に示す円盤状のパンチ５１を使用する。このパンチ５１は、その外径が第２の隆起部５０の外径よりも大きく、その押圧側端面が平坦となっている。
このプレス加工により、第１、第２の隆起部４９、５０が潰され、第１の隆起部４９を構成する金属材料が径方向外側へ向けて移動すると共に、第２の隆起部５０を構成する金属材料が径方向内側へ向けて移動して（図５（Ｂ）の矢印の方向へ向けて移動して）、ディンプル１４（第１の突出部４４及び第２の突出部４６が形成された第１の溝部４０）を形成できる。また、上記したパンチ４７を使用することで、第１の隆起部４９の基部側の外径が凹部４８の底へ向けて拡幅（テーパ状に）するため、パンチ５１によるプレス加工の際、第１の隆起部４９が傾いて潰れたりすることがなく、第１の溝部４０の形状が均一に形成されて安定する。 Subsequently, a second press process is performed on the die pad 12 in which the concave portion 48 and the first and second raised portions 49 and 50 are formed.
In this press working, a disk-shaped punch 51 shown in FIG. 5B is used. The punch 51 has an outer diameter larger than the outer diameter of the second raised portion 50, and the pressing side end surface thereof is flat.
As a result of this pressing, the first and second raised portions 49 and 50 are crushed, and the metal material constituting the first raised portion 49 moves outward in the radial direction, and the second raised portion 50 is formed. The metal material to be moved moves inward in the radial direction (moves in the direction of the arrow in FIG. 5B), so that the dimple 14 (the first protrusion 44 and the second protrusion 46 is formed). The first groove portion 40) can be formed. Further, by using the punch 47 described above, the outer diameter on the base side of the first raised portion 49 is increased (tapered) toward the bottom of the concave portion 48. The first raised portion 49 is not inclined and crushed, and the shape of the first groove portion 40 is uniformly formed and stabilized.

このように、第２のプレス加工により、第１の隆起部４９が第１の突出部４４となり、第２の隆起部５０が第２の突出部４６となるため、形成する第１、第２の突出部４４、４６の大きさに応じて、第１、第２の隆起部４９、５０の大きさ（移動する金属材料の量）を、予め決定しておくことが好ましい。   As described above, since the first raised portion 49 becomes the first protruding portion 44 and the second raised portion 50 becomes the second protruding portion 46 by the second pressing, the first and second formed portions are formed. It is preferable that the size of the first and second raised portions 49 and 50 (the amount of the moving metal material) is determined in advance according to the size of the protruding portions 44 and 46.

次に、図６（Ａ）を参照しながら、本発明の第２の実施の形態に係るリードフレーム６０に設けたディンプル６１について説明するが、ディンプル６１は、その形状の一部のみが、前記したディンプル１４の形状と異なるため、同一部材には同一番号を付し、異なる部分についてのみ説明する。
ディンプル６１は、ディンプル６１の開口側６２に設けられた対向する第１の突出部６３と第２の突出部６４で形成される隙間を、ディンプル６１の開口側６２へ向けて徐々に拡幅させている（テーパ状にしている）。ここで、第１、第２の突出部６３、６４は、前記した第１の突出部４４、４６に相当する。
なお、第１、第２の突出部６３、６４は、図６（Ａ）に示すように、その各先端が尖っている。 Next, the dimple 61 provided in the lead frame 60 according to the second embodiment of the present invention will be described with reference to FIG. 6A. The dimple 61 has only a part of its shape. Since the shape is different from the shape of the dimple 14, the same number is assigned to the same member, and only different portions will be described.
The dimple 61 gradually widens the gap formed by the first and second protruding portions 63 and 64 provided on the opening side 62 of the dimple 61 toward the opening side 62 of the dimple 61. Yes (tapered). Here, the first and second protrusions 63 and 64 correspond to the first protrusions 44 and 46 described above.
In addition, as shown to FIG. 6 (A), each front-end | tip of the 1st, 2nd protrusion parts 63 and 64 is sharp.

上記した本発明の第２の実施の形態に係るリードフレーム６０の製造方法について以下説明するが、本製造方法は、前記したリードフレーム１５の製造方法の第２のプレス加工のみが異なる。このため、前記した第１のプレス加工終了後のリードフレーム１５に対して、第２のプレス加工を行う方法についてのみ、詳しく説明する。
このプレス加工では、図６（Ｂ）に示すように、パンチ５１と同一形状の円盤部に、平面視して環状の第１の凸部６５が設けられたパンチ６６を使用する。ここで、第１の凸部６５は、断面外幅が、押圧対象（リードフレーム６０）に向けて縮幅している。 The manufacturing method of the lead frame 60 according to the second embodiment of the present invention described above will be described below, but this manufacturing method is different only in the second pressing of the manufacturing method of the lead frame 15 described above. For this reason, only the method of performing the second press work on the lead frame 15 after the completion of the first press work will be described in detail.
In this press working, as shown in FIG. 6 (B), a punch 66 is used in which a disk portion having the same shape as the punch 51 is provided with an annular first convex portion 65 in plan view. Here, the outer width of the first convex portion 65 is reduced toward the pressing target (lead frame 60).

上記したパンチ６６により、第１、第２の隆起部４９、５０が潰され、第１の隆起部４９を構成する金属材料が径方向外側へ向けて移動すると共に、第２の隆起部５０を構成する金属材料が径方向内側へ向けて移動する（図６（Ｂ）の矢印の方向へ向けて移動）。
また、第１の凸部６５により、対向する第１の突出部６３と第２の突出部６４で形成される隙間を、ディンプル６１の開口側６２へ向けて拡幅させることができる。なお、この構成により、半導体装置の製造に際し、第１の溝部４０へのモールド樹脂の流れ込みも促進できる。
これにより、ディンプル６１を形成できる。 By the punch 66 described above, the first and second raised portions 49 and 50 are crushed, and the metal material constituting the first raised portion 49 moves outward in the radial direction. The constituent metal material moves inward in the radial direction (moves in the direction of the arrow in FIG. 6B).
In addition, the first protrusion 65 can widen the gap formed by the opposing first protrusion 63 and second protrusion 64 toward the opening side 62 of the dimple 61. With this configuration, it is possible to promote the flow of the mold resin into the first groove portion 40 when the semiconductor device is manufactured.
Thereby, the dimple 61 can be formed.

続いて、図７（Ａ）を参照しながら、本発明の第３の実施の形態に係るリードフレーム７０に設けたディンプル７１について説明するが、ディンプル７１は、その形状の一部のみが、前記したディンプル１４、６１の形状と異なるため、異なる部分について詳しく説明する。
ディンプル７１には、平面視して環状の第１の溝部７２（前記した第１の溝部４０に相当）が設けられている。この第１の溝部７２は、図７（Ａ）に示すように、その断面内幅Ｗ２が、第１の溝部７２の底部７３から開口側７４へ向けて徐々に縮幅している。 Subsequently, the dimple 71 provided in the lead frame 70 according to the third embodiment of the present invention will be described with reference to FIG. 7A. The dimple 71 has only a part of its shape. Since the shapes of the dimples 14 and 61 are different from each other, different portions will be described in detail.
The dimple 71 is provided with an annular first groove 72 (corresponding to the first groove 40 described above) in plan view. As shown in FIG. 7A, the first groove 72 has an inner width W2 that is gradually reduced from the bottom 73 of the first groove 72 toward the opening side 74.

ディンプル７１の開口側７４には、第１の溝部７２の内周面７５が径方向外側へ向けて突出する第１の突出部７６と、第１の溝部７２の外周面７７が径方向内側へ向けて突出する第２の突出部７８が、それぞれ設けられている。また、ディンプル７１の開口側７４に設けられた対向する第１の突出部７６と第２の突出部７８で形成される隙間を、ディンプル７１の開口側７４へ向けて徐々に拡幅させている。なお、対向する第１の突出部７６と第２の突出部７８で形成される隙間を拡幅させることなく、ディンプル１４と同様の形状とすることもできる。
ここで、第１、第２の突出部７６、７８はそれぞれ、前記した第１、第２の突出部６３、６４に相当する。 On the opening side 74 of the dimple 71, a first protrusion 76 in which an inner peripheral surface 75 of the first groove 72 protrudes radially outward and an outer peripheral surface 77 of the first groove 72 radially inward. Second projecting portions 78 projecting toward each other are provided. In addition, the gap formed by the opposing first protrusion 76 and second protrusion 78 provided on the opening side 74 of the dimple 71 is gradually widened toward the opening side 74 of the dimple 71. Note that the same shape as that of the dimple 14 can be obtained without widening the gap formed by the first protrusion 76 and the second protrusion 78 facing each other.
Here, the first and second protrusions 76 and 78 correspond to the first and second protrusions 63 and 64, respectively.

ディンプル７１の開口側７４には、更に第２の溝部７９が設けられ、この第２の溝部７９の底に、第１の溝部７２と第１、第２の突出部７６、７８が設けられている。
この第２の溝部７９は、平面視して円形であり、その内径が、第２の突出部７８の外径（即ち、第１の溝部７２の底部７３の外径）よりも大きくなっている。また、第２の溝部７９は、リードフレーム７０の表面からの深さｄ２が、リードフレーム７０（金属製シート）の厚みの１０〜３０％程度、である。 A second groove 79 is further provided on the opening side 74 of the dimple 71, and a first groove 72 and first and second protrusions 76 and 78 are provided on the bottom of the second groove 79. Yes.
The second groove 79 has a circular shape in plan view, and the inner diameter thereof is larger than the outer diameter of the second protrusion 78 (that is, the outer diameter of the bottom 73 of the first groove 72). . The second groove 79 has a depth d2 from the surface of the lead frame 70 of about 10 to 30% of the thickness of the lead frame 70 (metal sheet).

上記した本発明の第３の実施の形態に係るリードフレーム７０の製造方法について以下説明するが、本製造方法は、前記したリードフレーム１５の製造方法の第２のプレス加工のみが異なる。このため、前記した第１のプレス加工終了後のリードフレーム１５に対して、第２のプレス加工を行う方法についてのみ、詳しく説明する。
このプレス加工では、図７（Ｂ）に示すように、前記したパンチ６６の円盤部と第１の凸部６５との間に、円盤部よりも径が小さな円盤状の第２の凸部８０が設けられたパンチ８１を使用する。なお、第１の凸部６５が設けられていないパンチを使用することもできる。 A method of manufacturing the lead frame 70 according to the third embodiment of the present invention will be described below, but this manufacturing method is different only in the second press working of the method of manufacturing the lead frame 15 described above. For this reason, only the method of performing the second press work on the lead frame 15 after the completion of the first press work will be described in detail.
In this pressing, as shown in FIG. 7B, a disc-shaped second convex portion 80 having a smaller diameter than the disc portion is provided between the disc portion of the punch 66 and the first convex portion 65. The punch 81 provided with is used. It is also possible to use a punch in which the first convex portion 65 is not provided.

このパンチ８１の第２の凸部８０により、第１、第２の隆起部４９、５０が潰され、更に、第２の溝部７９も形成されながら、第１の隆起部４９を構成する金属材料が径方向外側へ向けて移動すると共に、第２の隆起部５０を構成する金属材料が径方向内側へ向けて移動する（図７（Ｂ）の矢印の方向へ向けて移動）。
また、第１の凸部６５により、対向する第１の突出部７６と第２の突出部７８で形成される隙間を、ディンプル７１の開口側７４へ向けて拡幅できる。
これにより、ディンプル７１を形成できる。 The metal material which comprises the 1st protruding part 49, the 1st and 2nd protruding parts 49 and 50 being crushed by the 2nd convex part 80 of this punch 81, and also the 2nd groove part 79 being formed. Moves toward the outside in the radial direction, and the metal material constituting the second raised portion 50 moves toward the inside in the radial direction (moves in the direction of the arrow in FIG. 7B).
Further, the first protrusion 65 can widen the gap formed by the first protrusion 76 and the second protrusion 78 facing each other toward the opening side 74 of the dimple 71.
Thereby, the dimple 71 can be formed.

以上、本発明を、実施の形態を参照して説明してきたが、本発明は何ら上記した実施の形態に記載の構成に限定されるものではなく、特許請求の範囲に記載されている事項の範囲内で考えられるその他の実施の形態や変形例も含むものである。例えば、前記したそれぞれの実施の形態や変形例の一部又は全部を組合せて本発明のリードフレーム及びその製造方法並びにそれを用いた半導体装置を構成する場合も本発明の権利範囲に含まれる。
また、前記実施の形態においては、ディンプルを、リードフレームのリード又はダイパッドに設けた場合について説明したが、リードとダイパッドの双方に設けてもよい。これにより、ディンプルを、リードに設けた場合とダイパッドに設けた場合の両方の効果が得られる。 As described above, the present invention has been described with reference to the embodiment. However, the present invention is not limited to the configuration described in the above embodiment, and the matters described in the scope of claims. Other embodiments and modifications conceivable within the scope are also included. For example, a case where a lead frame of the present invention, a manufacturing method thereof, and a semiconductor device using the same are configured by combining some or all of the above-described embodiments and modifications are also included in the scope of the right of the present invention.
In the above-described embodiment, the case where the dimple is provided on the lead of the lead frame or the die pad has been described. However, the dimple may be provided on both the lead and the die pad. As a result, the effects of both the case where the dimple is provided on the lead and the case where the dimple is provided on the die pad can be obtained.

１０：半導体装置、１１：リード、１２：ダイパッド、１３：モールド樹脂、１４：ディンプル、１５：リードフレーム、１６：チップ、１７：ボンディングワイヤ、１８：サポートバー、２０：半導体装置、２１：ダイパッド、２２：モールド樹脂、２３：リードフレーム、３０：半導体装置、３１：リード、３２：ダイパッド、３３：モールド樹脂、３４：リードフレーム、４０：第１の溝部、４１：底部、４２：開口側、４３：内周面、４４：第１の突出部、４５：外周面、４６：第２の突出部、４７：パンチ、４８：凹部、４９：第１の隆起部、５０：第２の隆起部、５１：パンチ、６０：リードフレーム、６１：ディンプル、６２：開口側、６３：第１の突出部、６４：第２の突出部、６５：第１の凸部、６６：パンチ、７０：リードフレーム、７１：ディンプル、７２：第１の溝部、７３：底部、７４：開口側、７５：内周面、７６：第１の突出部、７７：外周面、７８：第２の突出部、７９：第２の溝部、８０：第２の凸部、８１：パンチ 10: Semiconductor device, 11: Lead, 12: Die pad, 13: Mold resin, 14: Dimple, 15: Lead frame, 16: Chip, 17: Bonding wire, 18: Support bar, 20: Semiconductor device, 21: Die pad, 22: Mold resin, 23: Lead frame, 30: Semiconductor device, 31: Lead, 32: Die pad, 33: Mold resin, 34: Lead frame, 40: First groove, 41: Bottom, 42: Open side, 43 : Inner peripheral surface, 44: first projecting portion, 45: outer peripheral surface, 46: second projecting portion, 47: punch, 48: recessed portion, 49: first raised portion, 50: second raised portion, 51: Punch, 60: Lead frame, 61: Dimple, 62: Opening side, 63: First protrusion, 64: Second protrusion, 65: First protrusion, 66: Punch, 70: Re- Frame: 71: dimple, 72: first groove, 73: bottom, 74: opening side, 75: inner peripheral surface, 76: first projecting portion, 77: outer peripheral surface, 78: second projecting portion, 79: 2nd groove part, 80: 2nd convex part, 81: Punch

Claims (8)

リードとダイパッドを有し、前記リード及び前記ダイパッドのいずれか一方又は双方に、モールド樹脂との密着性を向上させるためのディンプルを設けたリードフレームであって、
前記ディンプルには、平面視して環状となって、その断面内幅が、前記ディンプルの底部から開口側へ向けて縮幅する第１の溝部が設けられ、
前記ディンプルの開口側には、前記第１の溝部の内周面が径方向外側へ向けて突出する第１の突出部と、前記第１の溝部の外周面が径方向内側へ向けて突出する第２の突出部がそれぞれ設けられ、かつ、前記第１の突出部の径方向外側への突出量が、前記第２の突出部の径方向内側への突出量より大きいことを特徴とするリードフレーム。 A lead frame having a lead and a die pad, and dimples for improving adhesion to a mold resin on one or both of the lead and the die pad,
The dimple is provided with a first groove portion that is annular in a plan view and has a cross-sectional inner width that is reduced from the bottom of the dimple toward the opening side,
On the opening side of the dimple, a first protruding portion in which an inner peripheral surface of the first groove portion protrudes radially outward, and an outer peripheral surface of the first groove portion protrudes inward in the radial direction. Each lead is provided with a second protrusion, and the amount of protrusion of the first protrusion in the radially outward direction is larger than the amount of protrusion of the second protrusion inward in the radial direction. flame. 請求項１記載のリードフレームにおいて、対向する前記第１の突出部と前記第２の突出部で形成される隙間を、前記ディンプルの開口側へ向けて拡幅させていることを特徴とするリードフレーム。   2. The lead frame according to claim 1, wherein a gap formed between the first projecting portion and the second projecting portion facing each other is widened toward the opening side of the dimple. . 請求項１又は２記載のリードフレームにおいて、前記ディンプルの開口側には、更に第２の溝部が設けられ、該第２の溝部の底に、前記第１の溝部と前記第１、第２の突出部が設けられていることを特徴とするリードフレーム。   3. The lead frame according to claim 1, wherein a second groove is further provided on the opening side of the dimple, and the first groove and the first and second grooves are provided at the bottom of the second groove. A lead frame comprising a protruding portion. 請求項１記載のリードフレームの製造方法であって、
平面視して環状の凹部を形成すると共に、該凹部の径方向内側に第１の隆起部を、前記凹部の径方向外側に第２の隆起部を、それぞれ形成する第１のプレス加工を行った後、
前記第１、第２の隆起部を潰して、前記第１の溝部を形成すると共に、前記第１、第２の突出部を形成する第２のプレス加工を行うことを特徴とするリードフレームの製造方法。 A method of manufacturing a lead frame according to claim 1,
A first press working is performed to form an annular recess in plan view and to form a first raised portion radially inward of the recessed portion and a second raised portion radially outward of the recessed portion. After
A lead frame characterized by crushing the first and second raised portions to form the first groove portion and performing a second press working to form the first and second projecting portions. Production method. 請求項４記載のリードフレームの製造方法において、前記第２のプレス加工に使用するパンチには第１の凸部が設けられ、前記第２のプレス加工を行うことで、対向する前記第１の突出部と前記第２の突出部で形成される隙間を、前記ディンプルの開口側へ向けて拡幅させることを特徴とするリードフレームの製造方法。   5. The lead frame manufacturing method according to claim 4, wherein a punch used for the second press work is provided with a first convex portion, and the first press facing the punch is performed by performing the second press work. 6. A method of manufacturing a lead frame, characterized in that a gap formed by a projecting portion and the second projecting portion is widened toward the opening side of the dimple. 請求項４又は５記載のリードフレームの製造方法において、前記第２のプレス加工に使用するパンチには第２の凸部が設けられ、前記第２のプレス加工を行うことで、第２の溝部を形成すると共に、該第２の溝部の底に、前記第１の溝部と前記第１、第２の突出部を形成することを特徴とするリードフレームの製造方法。   6. The lead frame manufacturing method according to claim 4 or 5, wherein a second protrusion is provided on the punch used for the second press working, and the second groove is formed by performing the second press working. And forming the first groove portion and the first and second projecting portions at the bottom of the second groove portion. 請求項１〜３のいずれか１項に記載のリードフレームを用いた半導体装置であって、前記ディンプルには前記モールド樹脂が充填され、前記ダイパッドと、該ダイパッド上に搭載されたチップと、前記リードは、前記モールド樹脂で一体化されていることを特徴とする半導体装置。   4. The semiconductor device using the lead frame according to claim 1, wherein the dimple is filled with the mold resin, the die pad, a chip mounted on the die pad, A semiconductor device, wherein the lead is integrated with the mold resin. 請求項７記載の半導体装置において、前記ダイパッドの裏面が外部に露出していることを特徴とする半導体装置。   8. The semiconductor device according to claim 7, wherein a back surface of the die pad is exposed to the outside.
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