JP2015069899A - Element manufacturing method and element manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an element manufacturing method and an element manufacturing apparatus that can reduce the time required for deaerating the inside of an element manufacturing apparatus.SOLUTION: An element manufacturing apparatus comprises a protrusion forming apparatus for forming a protrusion on a base material and a sealing mechanism for closely attaching a first surface of a lid member to an intermediate product including the base material and the protrusion from the side of the protrusion. The sealing mechanism closely attaches the lid member to the intermediate product by adjusting the pressure around the lid member to a second pressure higher than a first pressure after covering the intermediate product with the lid member in an environment where the pressure is controlled to the first pressure. The element manufacturing apparatus further includes a film forming apparatus for forming a film on the intermediate product in an environment where the pressure is adjusted to a third pressure after the lid member is detached from the intermediate product. Here, the second pressure is lower than atmospheric pressure.

Description

  The present invention relates to an element manufacturing method and an element manufacturing apparatus for manufacturing an element such as an organic semiconductor element.

  A process for manufacturing an element such as an organic semiconductor element or an inorganic semiconductor element is generally performed in a vacuum environment in order to prevent impurities from being mixed into the element. For example, as a method for forming a cathode electrode, an anode electrode, or a semiconductor layer on a substrate, a film forming technique that is performed in a vacuum environment such as a sputtering method or a vapor deposition method is used. The vacuum environment is realized by degassing the inside of the element manufacturing apparatus over a predetermined time using a vacuum pump or the like.

  By the way, in the device manufacturing process, various processes are performed in addition to the film forming process. Among them, there is a process conventionally performed under atmospheric pressure. On the other hand, in order to realize a vacuum environment, a predetermined time is required as described above. Accordingly, when the element manufacturing process further includes a process performed under atmospheric pressure in addition to a film forming process performed under a vacuum environment, the inside of the element manufacturing apparatus can be degassed, This will increase the time required to replace the internal environment with the atmosphere. For this reason, it is desirable that each manufacturing process of the device is performed in an environment at a pressure lower than atmospheric pressure. As a result, the time and cost required to obtain one element can be reduced.

  Examples of the process other than the film forming process include a removal process for removing the organic semiconductor layer located on the auxiliary electrode as described in Patent Document 1. An auxiliary electrode is provided in order to suppress that the voltage drop which generate | occur | produces in a common electrode differs according to a place, when the electrode provided on an organic-semiconductor layer is a thin film-like common electrode. That is, the voltage drop in the common electrode can be reduced by connecting the common electrode to the auxiliary electrode at various locations. On the other hand, since the organic semiconductor layer is generally provided over the entire area of the base material, in order to connect the common electrode to the auxiliary electrode, it is necessary to perform the above-described removal step of removing the organic semiconductor layer on the auxiliary electrode.

  As a method of removing the organic semiconductor layer on the auxiliary electrode, a method of irradiating the organic semiconductor layer with light such as laser light is known. In this case, since the organic semiconductor material constituting the organic semiconductor layer is scattered by ablation, it is preferable to cover the base material with some member so as to prevent contamination by the scattered organic semiconductor material. For example, in Patent Document 1, first, an opposing base material is superposed on a base material in a vacuum environment to form an overlapping base material, and then the space between the opposing base material and the base material is maintained in a vacuum atmosphere. In such a state, a method has been proposed in which the superposed substrate is taken out into the atmosphere, and then the organic semiconductor layer is irradiated with laser light. In this case, based on the differential pressure between the vacuum atmosphere and the atmosphere, the opposing base material can be firmly adhered to the base material, thereby reliably preventing contamination by the scattered organic semiconductor material. it can.

Japanese Patent No. 4340982

  When a part of the device manufacturing process is performed in the atmosphere as described in Patent Document 1, it takes time to replace the environment inside the device manufacturing apparatus with the atmosphere. It is also conceivable to carry out further steps in a vacuum environment after performing some steps in the atmosphere. For example, in Patent Document 1, after separating the opposing base material and the base material, a step of forming electrodes on the base material is performed in a vacuum environment. In this case, since it is necessary to deaerate the inside of the element manufacturing apparatus again to create a vacuum atmosphere, the time required for the element manufacturing process further increases.

  The present invention has been made in view of such points, and an object of the present invention is to provide an element manufacturing method and an element manufacturing apparatus that can reduce the time required for deaeration inside the element manufacturing apparatus. .

  The present invention is an element manufacturing method for forming an element on a substrate, the method comprising: forming an intermediate product including the substrate and a protrusion extending in a normal direction of the substrate; A step of covering the intermediate product with the first surface of the lid material from the side of the protrusion under an environment controlled by one pressure, and a second surface side of the lid material on the opposite side of the first surface An adhesion step for closely adhering the first surface of the lid to the intermediate product by adjusting a pressure around the lid at least partially to a second pressure higher than the first pressure; A peeling step for peeling the lid material from the product; and a film forming step for forming a film on the intermediate product in an environment adjusted to a third pressure, wherein the second pressure is lower than atmospheric pressure. It is a device manufacturing method that is pressure.

In the element manufacturing method according to the present invention, preferably, a differential pressure between the second pressure and the first pressure is in a range of 1 × 10 ¹ Pa to 5 × 10 ⁴ Pa.

  In the element manufacturing method according to the present invention, the element includes the base material, a plurality of first electrodes provided on the base material, an auxiliary electrode provided between the first electrodes, and the protrusion. An organic semiconductor layer provided on the first electrode; and a second electrode provided on the organic semiconductor layer and on the auxiliary electrode; and the intermediate product is formed on the substrate and the substrate. A plurality of the first electrodes provided; the auxiliary electrode and the protrusion provided between the first electrodes; and the organic semiconductor layer provided on the first electrode and the auxiliary electrode. May be included. In this case, the element manufacturing method may further include a removal step of removing the organic semiconductor layer provided on the auxiliary electrode after the adhesion step. In this case, the film forming step forms a film to be the second electrode on the intermediate product in an environment adjusted to a third pressure after the removing step and the peeling step.

  In the element manufacturing method according to the present invention, the auxiliary electrode is partially covered by the protrusion, and the removing step is performed on the organic semiconductor layer on the auxiliary electrode disposed adjacent to the protrusion. A step of irradiating light may be included. Alternatively, the protrusion may be at least partially covered with the auxiliary electrode, and the organic semiconductor layer on the auxiliary electrode located on the protrusion may be removed in the removing step.

  In the element manufacturing method according to the present invention, a vapor deposition material is provided on the first surface of the lid member, and the element manufacturing method is configured to irradiate the vapor deposition material with light after the adhesion step. You may provide the process of vapor-depositing the material for vapor deposition on the said base material.

  In the element manufacturing method according to the present invention, the lid member may be supplied in a roll-to-roll manner, and the adhesion step and the peeling step may be sequentially performed in the same chamber.

  The present invention is an element manufacturing apparatus for forming an element on a base material, the protrusion forming apparatus for forming a protrusion extending in the normal direction of the base material on the base material, the base material, A sealing mechanism for closely contacting the first surface of the lid material from the side of the protrusion to an intermediate product including the protrusion, and the sealing mechanism is configured to perform the intermediate operation under an environment controlled by a first pressure. After covering the product from the protrusion side with the first surface of the lid, the pressure around the lid is at least partially applied to the second surface of the lid on the opposite side of the first surface. In particular, by adjusting the second pressure higher than the first pressure, the first surface of the lid member is configured to be in close contact with the intermediate product. After the cover material is peeled off, a film is formed on the intermediate product in an environment adjusted to the third pressure. Further comprising a film-forming apparatus, the second pressure is lower than atmospheric pressure, a device manufacturing apparatus.

In the element manufacturing apparatus according to the present invention, preferably, a differential pressure between the second pressure and the first pressure is in a range of 1 × 10 ¹ Pa to 5 × 10 ⁴ Pa.

  In the element manufacturing apparatus according to the present invention, the element includes the base material, a plurality of first electrodes provided on the base material, an auxiliary electrode provided between the first electrodes, and the protrusion. An organic semiconductor layer provided on the first electrode; and a second electrode provided on the organic semiconductor layer and on the auxiliary electrode; and the intermediate product is formed on the substrate and the substrate. A plurality of the first electrodes provided; the auxiliary electrode and the protrusion provided between the first electrodes; and the organic semiconductor layer provided on the first electrode and the auxiliary electrode. May be included. In this case, the element manufacturing apparatus may further include a removal mechanism for removing the organic semiconductor layer provided on the auxiliary electrode while the lid member is in close contact with the intermediate product. In this case, the film forming apparatus is adjusted to the third pressure after the organic semiconductor layer provided on the auxiliary electrode is removed by the removal mechanism, and then the lid member is peeled from the intermediate product. A film to be the second electrode is formed on the intermediate product in a dry environment.

  In the element manufacturing apparatus according to the present invention, the auxiliary electrode is partially covered by the protrusion, and the removal mechanism is formed on the organic semiconductor layer on the auxiliary electrode disposed adjacent to the protrusion. You may have the light irradiation part which irradiates light. Alternatively, the protrusion may be at least partially covered by the auxiliary electrode, and the removal mechanism may be configured to remove the organic semiconductor layer on the auxiliary electrode located on the protrusion. Good.

  In the element manufacturing apparatus according to the present invention, a vapor deposition material is provided on the first surface of the lid member, and the element manufacturing apparatus is configured for the vapor deposition while the lid material is in close contact with the intermediate product. You may provide the vapor deposition mechanism which irradiates light to material and deposits the said vapor deposition material on the said base material.

  In the element manufacturing apparatus according to the present invention, the sealing mechanism includes a lid material supply unit that supplies the lid material in a roll-to-roll manner, and the lid material supply unit applies the lid material toward the intermediate product. An unwinding unit that unwinds and a winding unit that winds up the lid material peeled off from the intermediate product, and the unwinding unit and the winding unit may be disposed in the same chamber. .

  In the element manufacturing apparatus according to the present invention, the sealing mechanism may be configured such that, on the second surface side of the lid member on the opposite side of the first surface, the pressure around the lid member is partially higher than the first pressure. A pressurizing unit that adjusts to a high second pressure, and the pressurizing unit includes a light-transmitting substrate and a packing provided on the substrate, and the lid member, the substrate, and the substrate The space surrounded by the packing may be a sealed space adjusted to the second pressure on the second surface side of the lid member.

  According to the present invention, the step of covering the intermediate product from the protrusion side using the first surface of the lid member is performed under an environment controlled by the first pressure. In addition, on the second surface side of the lid member on the opposite side of the first surface, the pressure around the lid member is adjusted to a second pressure that is at least partially higher than the first pressure. The surface is brought into close contact with the intermediate product. Thereafter, a film is formed on the intermediate product in an environment adjusted to the third pressure. Here, the second pressure is a pressure lower than the atmospheric pressure. For this reason, the inside of the element manufacturing apparatus can be adjusted from the second pressure to the third pressure in a short time. As a result, the productivity of the element can be increased as compared with the case where the lid member is brought into close contact with the intermediate product under atmospheric pressure.

FIG. 1 is a longitudinal sectional view showing an organic semiconductor element in an embodiment of the present invention. FIG. 2A is a plan view showing an example of a layout of auxiliary electrodes, protrusions, and organic semiconductor layers of the organic semiconductor element shown in FIG. FIG. 2B is a plan view showing another example of the layout of the auxiliary electrode, the protrusion, and the organic semiconductor layer of the organic semiconductor element shown in FIG. 1. FIG. 3 is a diagram showing an element manufacturing apparatus according to the embodiment of the present invention. 4A to 4G are diagrams showing a device manufacturing method in the embodiment of the present invention. FIGS. 5A to 5D are views showing a method for removing the organic semiconductor layer on the auxiliary electrode in the embodiment of the present invention. 6 (a) and 6 (b) are diagrams showing a modification of the method for bringing the lid material into close contact with the intermediate product. FIGS. 7A to 7G are views showing a method for removing an organic semiconductor layer on an auxiliary electrode in a modification of the embodiment of the present invention. FIGS. 8A and 8B are views showing a method of depositing a deposition material on a substrate using an intermediate product processing apparatus including a sealing mechanism.

  Hereinafter, embodiments of the present invention will be described with reference to FIGS. 1 to 5A to 5D. First, the layer structure of the organic semiconductor element 40 in the present embodiment will be described with reference to FIG. Here, a top emission type organic EL element will be described as an example of the organic semiconductor element 40.

As shown in FIG. 1, the organic semiconductor element 40 includes a base material 41, a plurality of first electrodes 42 provided on the base material 41, auxiliary electrodes 43 and protrusions provided between the first electrodes 42. A portion 44, an organic semiconductor layer 45 provided on the first electrode 42, and a second electrode 46 provided on the organic semiconductor layer 45 and the auxiliary electrode 43.
The organic semiconductor layer 45 includes at least a light emitting layer that emits light by recombination of electrons and holes in an organic compound. The organic semiconductor layer 45 may further include various layers generally provided in the organic EL element, such as a hole injection layer, a hole transport layer, an electron transport layer, or an electron injection layer. As the constituent elements of the organic semiconductor layer, known ones can be used, for example, those described in JP 2011-9498 A can be used.
The first electrode 42 is provided corresponding to each of the organic semiconductor layers 45. The first electrode 42 also functions as a reflective electrode that reflects light generated in the organic semiconductor layer 45. As a material constituting the first electrode 42, a single element of a metal element such as aluminum, chromium, titanium, iron, cobalt, nickel, molybdenum, copper, tantalum, tungsten, platinum, gold, silver, or an alloy thereof, or these Examples thereof include a laminate of a metal material and an oxide conductive material such as ITO or IZO.
The second electrode 46 functions as a common electrode for the plurality of organic semiconductor layers 45. The second electrode 46 is configured to transmit light generated in the organic semiconductor layer 45. As a material constituting the second electrode 46, a metal film thinned to such an extent that light can be transmitted, or an oxide conductive material such as ITO or IZO can be used.
The auxiliary electrode 43 prevents a variation in voltage drop due to a difference in distance from a power source (not shown) to each organic semiconductor layer, thereby reducing the luminance of a display device using an organic EL element. This is to suppress variation. As shown in FIG. 1, each auxiliary electrode 43 is connected to the second electrode 46. Examples of the material constituting the auxiliary electrode 43 include a single element or alloy of the same metal element as that of the first electrode 42. The auxiliary electrode 43 may be made of the same material as the first electrode 42, or may be made of a material different from the first electrode 42.
The protrusion 44 is made of an insulating material. In the example shown in FIG. 1, the protrusion 44 is provided between the first electrode 42 and the auxiliary electrode 43. By providing such a protrusion 44, it is possible to ensure insulation between the first electrode 42, the auxiliary electrode 43, and the second electrode 46. In addition, the shape of the organic semiconductor layer 45 provided between the protrusions 44 can be appropriately determined. As a material constituting the protruding portion 44, an organic material such as polyimide or an inorganic insulating material such as silicon oxide can be used. Further, the protrusion 44 is configured to extend along the normal direction of the base material 41. Therefore, when the lid material described later is brought into close contact with the base material 41, there is a space between the lid material and the base material 41. It can also function as a spacer for ensuring the above.

  As shown in FIG. 1, the organic semiconductor layer 45 and the second electrode 46 may be continuously provided not only on the first electrode 42 but also on the protrusion 44. The organic semiconductor layer 45 emits light when current flows between the first electrode 42 and the second electrode 46. In the organic semiconductor layer 45 located on the protrusion 44, the organic semiconductor layer 45 is positioned between the first electrode 42 and the second electrode 46. No light emission occurs. 2A and 2B to be described later, only the portion of the organic semiconductor layer 45 that emits light is shown.

  Next, the structure of the organic semiconductor element 40 when viewed from the normal direction of the substrate 41 will be described. In particular, the layout of the auxiliary electrode 43, the protrusion 44, and the organic semiconductor layer 45 of the organic semiconductor element 40 will be described. FIG. 2A is a plan view illustrating an example of the layout of the auxiliary electrode 43, the protrusion 44, and the organic semiconductor layer 45. As shown in FIG. 2A, the organic semiconductor layer 45 may include a red organic semiconductor layer 45R, a green organic semiconductor layer 45G, and a blue organic semiconductor layer 45B that are arranged in order in a matrix and each have a rectangular shape. In this case, a combination of adjacent organic semiconductor layers 45R, 45G, and 45B constitutes one pixel.

  As shown in FIG. 2A, the auxiliary electrodes 43 are arranged in a lattice shape so as to extend between the organic semiconductor layers 45 arranged in a matrix shape. By arranging the auxiliary electrode 43 in this way, it is possible to suppress the occurrence of a difference depending on the location in the voltage drop in the second electrode 46 connected to each organic semiconductor layer 45. In addition, as shown in FIG. 2A, the protrusion 44 is provided between the organic semiconductor layer 45 and the auxiliary electrode 43 so as to surround the organic semiconductor layer 45 from the side. That is, the protrusions 44 are continuously provided along the four sides of the organic semiconductor layer 45. Accordingly, it is possible to prevent the scattered organic semiconductor material from reaching the organic semiconductor layer 45 on the first electrode 42 in the step of removing the organic semiconductor layer 45 on the auxiliary electrode 43.

  In addition, as long as a voltage drop can be reduced appropriately, the auxiliary electrode 43 does not need to be connected to the 2nd electrode 46 over the whole region. That is, it is not necessary to remove all of the organic semiconductor layer 45 on the auxiliary electrode 43 in the removing step described later. Therefore, as shown in FIG. 2B, the protrusions 44 may be provided discontinuously along any of the four sides of the organic semiconductor layer 45. Also in the example shown in FIG. 2B, in the step of removing the organic semiconductor layer 45 on the auxiliary electrode 43 located between the protrusions 44, the scattered organic semiconductor material is applied to the organic semiconductor layer 45 on the first electrode 42. Can be prevented from reaching. Further, by connecting the auxiliary electrode 43 located between the protrusions 44 to the second electrode 46, the voltage drop can be appropriately suppressed.

Element Manufacturing Apparatus Next, the element manufacturing apparatus 10 for forming the organic semiconductor element 40 according to the present embodiment on the substrate 41 will be described. FIG. 3 is a diagram schematically showing the element manufacturing apparatus 10. The element manufacturing apparatus 10 includes a first electrode forming apparatus 11 that forms a plurality of first electrodes 42 on a base material 41, an auxiliary electrode forming apparatus 12 that forms an auxiliary electrode 43 between the first electrodes 42, and a first electrode. The protrusion forming device 13 that forms the protrusion 44 between the auxiliary electrode 43 and the auxiliary electrode 43, and the organic semiconductor layer forming device 14 that forms the organic semiconductor layer 45 on the first electrode 42, the auxiliary electrode 43, and the protrusion 44. And. In the following description, what is obtained by a process using each device 11, 12, 13, 14 may be referred to as an intermediate product 50.

  The element manufacturing apparatus 10 further includes an intermediate product processing apparatus 15 that performs a predetermined process while a lid 21c described later is in close contact with the base material 41. In the present embodiment, an example in which the intermediate product processing apparatus 15 is configured as a removing apparatus that removes the organic semiconductor layer 45 provided on the auxiliary electrode 43 will be described. Specifically, in the present embodiment, the intermediate product processing apparatus 15 includes a sealing mechanism 20 that closely attaches a lid 21c described later to the intermediate product 50 including the base material 41 and the protrusion 44 from the protrusion 44 side. And a removing mechanism 30 that removes the organic semiconductor layer 45 provided on the auxiliary electrode 43. The element manufacturing apparatus 10 further includes a film forming apparatus 16 that forms a film on the intermediate product 50 after the organic semiconductor layer 45 on the auxiliary electrode 43 is removed. In the present embodiment, the film forming apparatus is configured as a second electrode type apparatus 16 that forms the second electrode 46 on the auxiliary electrode 43 and the organic semiconductor layer 45. As shown in FIG. 3, the steps performed by the devices 11, 12, 13, 14, 15, and 16 are performed in the corresponding chambers 11a, 12a, 13a, 14a, 15a, and 16a, respectively.

  Although not illustrated, the element manufacturing apparatus 10 may further include a transport device connected to each of the devices 11 to 16 in order to transport the base material 41 and the intermediate product 50 between the devices 11 to 16. Moreover, between the two adjacent chambers among the chambers 11a to 16a of the devices 11 to 16, an intermediate chamber for preventing the atmosphere in the two chambers from communicating may be provided.

  3 categorizes each device from a functional viewpoint, and the physical form is not limited to the example shown in FIG. For example, a plurality of devices among the devices 11 to 16 illustrated in FIG. 3 may be physically configured by one device. Alternatively, any of the devices 11 to 16 illustrated in FIG. 3 may be physically configured by a plurality of devices. For example, as will be described later, the first electrode 42 and the auxiliary electrode 43 may be formed simultaneously in one process. In this case, the first electrode forming device 11 and the auxiliary electrode forming device 12 may be configured as one device.

Element Manufacturing Method Hereinafter, with reference to FIGS. 4A to 4G, a method for manufacturing the organic semiconductor element 40 using the element manufacturing apparatus 10 will be described. First, a metal material layer constituting the first electrode 42 and the auxiliary electrode 43 is formed on the substrate 41 by, for example, a sputtering method, and then the metal material layer is formed by etching. As a result, as shown in FIG. 4A, the first electrode 42 and the auxiliary electrode 43 described above can be simultaneously formed on the base material 41. Note that the step of forming the first electrode 42 and the step of forming the auxiliary electrode 43 may be performed separately.

  Next, as shown in FIG. 4B, the normal line of the base material 41 is interposed between the first electrode 42 and the auxiliary electrode 43 and above the first electrode 42 and the auxiliary electrode 43 by, for example, photolithography. A plurality of protrusions 44 extending in the direction are formed. Thereafter, as shown in FIG. 4C, by a general film forming method such as a vapor deposition method, a CVD method, a printing method, an ink jet method, or a transfer method, the first electrode 42, the auxiliary electrode 43, and the protrusion 44 are formed. An organic semiconductor layer 45 is formed thereon. In this way, the base 41, the plurality of first electrodes 42 provided on the base 41, the auxiliary electrode 43 and the protrusion 44 provided between the first electrodes 42, and the auxiliary on the first electrode 42 An intermediate product 50 including the organic semiconductor layer 45 provided on the electrode 43 and the protrusion 44 can be obtained. In the present embodiment, as described above, the first electrode 42 and the auxiliary electrode 43 are formed on the base material 41 before the protrusion 44. For this reason, the first electrode 42 and the auxiliary electrode 43 are partially covered by the protrusion 44.

The step of forming the organic semiconductor layer 45 is performed under an environment of 1 × 10 ⁻² Pa or less, for example. Thereby, it can suppress that an impurity mixes in the intermediate product 50. FIG.

  Next, the lid member 21c is prepared, and thereafter, as shown in FIG. 4D, an adhesion process is performed in which the first surface 21d of the lid member 21c is adhered to the intermediate product 50 using the sealing mechanism 20. Next, while the lid member 21c is in close contact with the intermediate product 50, a laser beam is applied to the organic semiconductor layer 45 provided on the auxiliary electrode 43 using the removal mechanism 30 as shown in FIG. Irradiate light L1. Thereby, the energy of the light L1 is absorbed by the organic semiconductor layer 45, and as a result, the organic semiconductor material constituting the organic semiconductor layer 45 on the auxiliary electrode 43 is scattered. In this manner, a removal process for removing the organic semiconductor layer 45 on the auxiliary electrode 43 can be performed. The organic semiconductor material scattered from the auxiliary electrode 43 adheres to the first surface 21d of the lid member 21c, for example, as shown in FIG.

  Hereinafter, the method for bringing the lid 21c into close contact with the intermediate product 50 and removing the organic semiconductor layer 45 on the auxiliary electrode 43 as described with reference to FIGS. 4D and 4E will be described with reference to FIG. It demonstrates in detail with reference to (d).

(Sealing mechanism)
First, the sealing mechanism 20 will be described. As shown in FIG. 5A, the sealing mechanism 20 has a chamber 15a that can be adjusted to an arbitrary pressure, and a lid material supply unit 21 that is disposed in the chamber 15a and supplies a lid material 21c. And have. The lid 21c is for covering the intermediate product 50 from the protrusion 44 side. By using such a lid member 21c, for example, in the above-described removal step, it is possible to prevent the organic semiconductor material scattered from the auxiliary electrode 43 from contaminating the organic semiconductor layer 45 on the first electrode 42 and the surrounding environment. it can.

  The lid material supply unit 21 may be configured to supply the lid material 21c in a roll-to-roll manner. For example, the lid material supply unit 21 may include an unwinding unit 21a that unwinds the lid material 21c and a winding unit 21b that winds the lid material 21c after being peeled from the intermediate product 50. In this case, the material and thickness of the lid member 21c are set so as to have a degree of flexibility that can be wound into a roll.

(Removal mechanism)
Next, the removal mechanism 30 will be described. The removal mechanism 30 removes the organic semiconductor layer 45 on the auxiliary electrode 43 by irradiating the organic semiconductor layer 45 on the auxiliary electrode 43 with light L1 such as laser light through the substrate 24 and the lid member 21c. As shown in FIG. 5A, the removal mechanism 30 includes, for example, a light irradiation unit 31 that generates laser light. In addition, as a material which comprises the lid | cover material 21c, the material which has translucency, such as plastic films and glass films, such as PET, COP, PP, PE, and PC, so that light L1 such as a laser beam can be transmitted. Used. 5A to 5D, the removal mechanism 30 is disposed in the chamber 15a. However, the removal mechanism 30 is particularly arranged as long as the intermediate product 50 can be irradiated with light. There is no limit. For example, the removal mechanism 30 may be placed in an atmospheric pressure environment outside the chamber 15a.

  Hereinafter, the operation of the intermediate product processing apparatus 15 will be described.

First, as shown in FIG. 5A, the intermediate product 50 is carried into a chamber 15a in which the sealing mechanism 20 is provided. The environment in the chamber 15a is adjusted to the first pressure P1. The first pressure P1 is set to at least 1 × 10 ² Pa or less, and more preferably set to 1 × 10 ⁻¹ Pa or less so as to prevent impurities from entering the intermediate product 50. In order to reduce the load of the deaeration process when the intermediate product 50 is transferred from the chamber 14a to the chamber 15a, the first pressure P1 is preferably set in the chamber 14a in which the process of forming the organic semiconductor layer 45 is performed. Is set to be 1 × 10 ² Pa or less.

  Next, as shown in FIG. 5B, the sealing mechanism 20 unwinds the lid 21c from the unwinding portion 21a toward the winding portion 21b in an environment controlled by the first pressure P1. The intermediate product 50 is covered with the first surface 21d of the lid member 21c from the protrusion 44 side. Thereafter, the sealing mechanism 20 brings the intermediate product 50 relatively close to the lid member 21c, and brings the intermediate product 50 and the lid member 21c into contact with each other. Thereby, as shown in FIG. 5B, a sealed space 28 adjusted to the first pressure P <b> 1 can be formed between the lid member 21 c and the intermediate product 50. As shown in FIG. 5B, the base material 41 is provided with a projection 44 and a sealing material 47 surrounding the first electrode 42, auxiliary electrode 43, and organic semiconductor layer 45 (not shown). Also good. When the sealing material 47 comes into contact with the first surface 21d of the lid material 21c, the sealing space 28 can be more firmly sealed from the surroundings. The sealing material 47 is made of, for example, an adhesive or an adhesive material. Although the sealing material 47 is illustrated as being formed on the intermediate product 50 here, the present invention is not limited thereto, and the sealing material 47 may be formed in a frame shape on the first surface 21d of the lid material 21c in advance. Good.

Thereafter, as shown in FIG. 5C, the sealing mechanism 20 is disposed on the side of the second surface 21e of the lid member 21c on the side opposite to the first surface 21d of the lid member 21c. The pressure is adjusted to a second pressure P2 that is at least partially higher than the first pressure P1. As a result, the first surface 21d of the lid member 21c can be firmly adhered to the intermediate product 50 using the differential pressure ΔP21 between the first pressure P1 and the second pressure P2. That is, the close contact process in which the first surface 21d of the lid member 21c is in close contact with the intermediate product 50 is completed. The differential pressure ΔP21 is appropriately set so that the organic semiconductor material scattered in the above-described removal step can be prevented from reaching the organic semiconductor layer 45 on the first electrode 42. For example, the differential pressure ΔP21 is set to at least 1 × 10 ¹ Pa or more, more preferably 1 × 10 ² Pa or more. The differential pressure ΔP21 is calculated by the equation ΔP21 = P2−P1.

  Next, while the lid is in close contact with the intermediate product, the removal mechanism 30 is placed on the organic semiconductor layer 45 provided on the auxiliary electrode 43 as shown in FIG. 5C and FIG. The light L <b> 1 is irradiated using the light irradiation unit 31. Thereby, the organic semiconductor layer 45 on the auxiliary electrode 43 can be removed.

  Thereafter, as shown in FIG. 5D, a peeling process for peeling the lid material 21 c from the intermediate product 50 is performed. As a result, the atmosphere in the chamber 15a becomes P2 'by mixing the atmosphere of the first pressure P1 between the lid 21c and the intermediate product 50 and the surrounding atmosphere of the second pressure P2. The pressure P2 'is a value between the first pressure P1 and the second pressure P2. As another form, the pressure inside the chamber 15a is reduced before the lid member 21c is peeled off so that the pressure in the chamber 15a is equal to or lower than the first pressure P1 from the second pressure P2. Good. As a result, the lid 21c can be more easily peeled off. FIG. 4F shows the intermediate product 50 from which the organic semiconductor layer 45 on the auxiliary electrode 43 has been removed and the lid 21c has been peeled off.

Next, the intermediate product 50 is carried into the chamber 16 a of the second electrode forming device 16. Then, a film forming process for forming a film on the intermediate product 50 is performed in the chamber 16a. At this time, the environment in the chamber 16a is adjusted to the third pressure P3. The third pressure P3 is set to at least 1 × 10 ² Pa or less, more preferably 1 × 10 ⁻¹ Pa or less, so as to suppress impurities from being mixed into the film formed on the intermediate product 50. Is set to In the present embodiment, the film forming step forms a film to be the second electrode 46 on the organic semiconductor layer 45 on the first electrode 42 and the auxiliary electrode 43 in an environment adjusted to the third pressure. It is carried out as a process. The organic semiconductor element 40 including the auxiliary electrode 43 connected to the second electrode 46 can be obtained by the film forming process.

By the way, when the pressure P2 ′ in the chamber 15a after the above-described peeling step is significantly higher than the third pressure P3 in the chamber 16a of the second electrode forming device 16, the chamber 15a is kept in the state of the pressure P2 ′. When the intermediate product 50 is opened and carried into the chamber 16a, the pressure in the chamber 16a increases. In order to prevent such an increase in pressure in the chamber 16a, the intermediate product 50 generally degass the chamber 15a until the pressure P2 ′ in the chamber 15a becomes close to the third pressure P3, or the chamber 15a and the chamber 15a. After adjusting the pressure in the intermediate chamber provided between it and 16a to the vicinity of the third pressure P3, it is carried into the chamber 16a. For this reason, when the above-mentioned second pressure P2 is high, the load of the deaeration process in the chamber 15a and the intermediate chamber increases, and as a result, the entire manufacturing process of the organic semiconductor element 40 including the above-described removal process and film formation process is increased. Throughput decreases. Therefore, in order to improve the throughput of the entire manufacturing process of the organic semiconductor element 40, the second pressure P2 is preferably low. In consideration of this point, the present inventors propose to set the second pressure P2 to a pressure lower than the atmospheric pressure. Thereby, it is possible to reduce the load of the deaeration process that is required when the intermediate product 50 is transported from the chamber 15a to the chamber 16a. Thereby, compared with the case where an adhesion process is implemented under atmospheric pressure, the throughput of the whole manufacturing process of organic-semiconductor element 40 can be improved. That is, the productivity of the organic semiconductor element 40 can be increased.
In addition, the load of the deaeration process required when conveying the intermediate product 50 from the chamber 15a to the chamber 16a depends not only on the value of the second pressure P2, but also on the value of the third pressure P3. Therefore, it is considered effective not only to lower the second pressure P2, but also to reduce the differential pressure ΔP23 between the second pressure P2 and the third pressure P3. In the present embodiment, the second pressure P2 is set so that the differential pressure ΔP23 is preferably 5.0 × 10 ⁴ Pa or less, more preferably 1.0 × 10 ³ Pa or less. The differential pressure ΔP23 is calculated by the equation ΔP23 = P2−P3.

Note that the second pressure P2 needs to be higher than the first pressure P1 to some extent in order to bring the lid 21c into close contact with the intermediate product 50. On the other hand, the load of the deaeration process required when the intermediate product 50 is transported from the chamber 15a to the chamber 16a is reduced as the second pressure P2 is lower. Accordingly, in consideration of the load of the deaeration process, the differential pressure ΔP21 between the first pressure P1 and the second pressure P2 is set to the minimum value necessary for bringing the lid 21c into close contact with the intermediate product 50. It is preferred that For example, the differential pressure ΔP21 is set within a range of 1 × 10 ¹ Pa to 5 × 10 ⁴ Pa.

  Note that various modifications can be made to the above-described embodiment. Hereinafter, modified examples will be described with reference to the drawings. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in the above embodiment are used for the parts that can be configured in the same manner as in the above embodiment. A duplicate description is omitted. In addition, when it is clear that the operational effects obtained in the above-described embodiment can be obtained in the modified example, the description thereof may be omitted.

(Modification of sealing mechanism)
In the above-described embodiment, the pressure around the lid member 21c on the second surface 21e side of the lid member 21c is adjusted to the second pressure as a whole in the close contact process in which the lid member 21c is in close contact with the intermediate product 50. An example was given. Specifically, the example in which the pressure in the chamber 15a is adjusted to the second pressure over the entire region has been shown. However, the present invention is not limited to this, and in the contact step, the pressure around the lid 21c on the second surface 21e side of the lid 21c is at least partially set to the second pressure P2 higher than the first pressure P1. It only needs to be adjusted. Hereinafter, an example of the sealing mechanism 20 configured to partially adjust the pressure around the lid member 21c to the second pressure P2 will be described with reference to FIGS.

As shown in FIG. 6A, the sealing mechanism 20 is disposed in the chamber 15a and applies pressure to the lid 21c so that the first surface 21d of the lid 21c is in close contact with the intermediate product 50. The pressure part 23 is further provided in addition to the lid material supply part 21 described above. As shown in FIG. 6A, the pressure unit 23 includes a substrate 24 and a packing 25 provided on the substrate 24. The packing 25 is provided on the side of the substrate 24 that faces the lid member 21c. The pressurizing unit 23 further includes a gas injection unit 26 that supplies a gas such as an inert gas to a space between the substrate 24 and the lid member 21 c through a through hole formed in the substrate 24.
The board | substrate 24 is comprised from the material which has translucency, for example, is comprised from quartz. Note that the entire area of the substrate 24 does not have to be translucent, and at least a portion through which the light L1 from the light irradiation unit 31 is transmitted needs to be translucent. For example, the substrate 24 is made of a light-transmitting material such as quartz only in a region where the light L1 from the light irradiation unit 31 is transmitted, and a region where the light L1 from the light irradiation unit 31 is not transmitted is processed with a metal material or the like. It may be made of a material excellent in properties and durability.
The packing 25 is made of a material that is in close contact with the second surface 21e of the lid member 21c and can improve the airtightness of the space between the substrate 24 and the lid member 21c, and is made of, for example, rubber. As another form, a sealing material 47 made of an adhesive material or the like is formed in advance on the second surface 21e of the lid material 21c in the same size as the packing 25, and the above-described sealing material 47 and the packing 25 The airtightness may be improved by adhering. In this case, the packing 25 is not necessarily made of a material that enhances airtightness such as rubber, but may be made of a material such as metal. When the sealing material 47 is provided not on the intermediate product 50 but on the second surface 21e of the lid 21c, there is no possibility that the intermediate product 50 is contaminated by the sealing material 47, and the sealing material 47 is placed on the intermediate product 50. It is not necessary to secure a space for 47.

  According to this modification, in the space in contact with the second surface 21e of the lid member 21c on the opposite side of the first surface 21d, specifically, in the space surrounded by the lid member 21c, the substrate 24 and the packing 25, A sealed space 29 sealed from the surroundings can be formed. The pressure in the sealed space 29 can be adjusted by adjusting the amount of gas that the gas injection unit 26 of the pressurizing unit 23 supplies into the sealed space 29. Therefore, according to this modification, the lid on the second surface 21e side of the lid member 21c is adjusted by adjusting the pressure of the sealed space 29 to the second pressure P2 higher than the first pressure P1 during the above-described contact process. The pressure around the material 21c can be partially adjusted to the second pressure P2. In this case, in the space other than the sealed space 29, the pressure in the chamber 15a is kept at the first pressure P1. For this reason, as shown in FIG. 6B, the pressure P2 ′ in the chamber 15a, which is generated when the atmosphere of the second pressure P2 in the sealed space 29 is mixed with the surroundings after the above-described removing step and the peeling step, The pressure can be lower than the pressure P2 ′ in the case of the above-described embodiment. For this reason, the load of the deaeration process required when conveying the intermediate product 50 from the chamber 15a to the chamber 16a can be further reduced.

(Modification of layer structure of organic semiconductor element)
In the above-described embodiment, the example in which the first electrode 42 and the auxiliary electrode 43 are formed on the base material 41 before the protruding portion 44 is shown. However, the present invention is not limited to this, and the protrusion 44 may be formed on the base material 41 before the first electrode 42 and the auxiliary electrode 43. Even in such a case, the adhesion process and the removal process according to this embodiment described above can be used. Hereinafter, such an example will be described with reference to FIGS.

  First, as shown in FIG. 7A, a plurality of protrusions 44 are formed on the base material 41. Next, as shown in FIG. 7B, the first electrode 42 is formed between the protrusions 44, and the auxiliary electrode 43 is formed on the protrusions 44. Thereafter, as shown in FIG. 7C, an organic semiconductor layer 45 is formed on the first electrode 42, the auxiliary electrode 43, and the protrusion 44. Thus, the base material 41, the plurality of first electrodes 42 provided on the base material 41, the auxiliary electrode 43 and the protrusion 44 provided between the first electrodes 42, the first electrode 42 and the auxiliary An intermediate product 50 including the organic semiconductor layer 45 provided on the electrode 43 can be obtained. In the present modification, since the protrusion 44 is formed before the first electrode 42 and the auxiliary electrode 43, the protrusion 44 is covered with the auxiliary electrode 43. The protrusion 44 does not need to be covered with the auxiliary electrode 43 over the entire upper surface. That is, the upper surface of the protrusion 44 only needs to be at least partially covered by the auxiliary electrode 43. In the above-described embodiment, the example in which the protrusions 44 are provided in two rows between the first electrodes 42 and the auxiliary electrode 43 is provided between the protrusions 44 has been described. Since the electrodes 43 are provided on the protrusions 44, the protrusions 44 provided between the first electrodes 42 may be in only one row as shown in FIG.

  Next, an adhesion process is performed in which the first surface 21 d of the lid member 21 c is adhered to the intermediate product 50. Specifically, as shown in FIG. 7D, the first surface 21 d of the lid member 21 c is in contact with the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44. At this time, as in the case of the above-described embodiment, the lid member 21c includes the first pressure P1 in the sealing space 28 between the first surface 21d of the lid member 21c and the intermediate product 50, and the lid member 21c. By utilizing the differential pressure ΔP21 between the second pressure P2 and the surrounding second pressure P2 on the second surface 21e side, the intermediate product 50 is firmly adhered. In this case, by appropriately setting the surface energy of the first surface 21d of the lid member 21c, as shown in FIG. 7E, the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 is placed on the lid member 21c. The first surface 21d can be transferred. In other words, in the present modification, a removal step of removing the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 can be performed using the transition. FIG. 7F is a diagram showing a state where the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 is removed. Also in this modification, in order to promote the transition, the organic semiconductor layer 45 on the auxiliary electrode 43 on the protrusion 44 may be irradiated with light as in the case of the above-described embodiment.

  Thereafter, as shown in FIG. 7G, the second electrode 46 is formed on the organic semiconductor layer 45 on the first electrode 42 and on the auxiliary electrode 43 on the protrusion 44 in an environment adjusted to the third pressure P3. A film forming step of forming is performed. Thus, the organic semiconductor element 40 including the auxiliary electrode 43 connected to the second electrode 46 can be obtained.

(Example in which the intermediate product processing device is configured as a vapor deposition device)
Further, in the above-described embodiment and the modification, an example in which the intermediate product processing apparatus 15 having the sealing mechanism 20 is configured as a removing apparatus that removes the organic semiconductor layer 45 on the auxiliary electrode 43 is shown. However, the application example of the above-described sealing mechanism 20 is not particularly limited. For example, as shown in FIGS. 8A and 8B, the intermediate product processing apparatus 15 irradiates the deposition material 48 with light while the lid 21c is in close contact with the sealing mechanism 20 and the intermediate product 50. And a vapor deposition mechanism 35 that vapor-deposits the vapor deposition material 48 on the base material 41. That is, the above-described adhesion method using the differential pressure inside the element manufacturing apparatus 10 may be applied for the vapor deposition process.

  In this modification, as shown in FIG. 8A, the vapor deposition material 48 is provided on the first surface 21d of the lid member 21c. 8A, the intermediate product 50 includes a base material 41, a plurality of protrusions 44 provided on the base material 41, a first electrode 42 provided between the protrusions 44, have. In this case, when the vapor deposition mechanism 35 is used to irradiate the vapor deposition material 48 with light L3 such as infrared rays, the vapor deposition material 48 evaporates. More specifically, as shown in FIG. 8A, when the vapor deposition material 48 existing at a position facing the first electrode 42 in the vapor deposition material 48 is irradiated with the light L3, the vapor deposition material 48 evaporates. To adhere to the first electrode 42 on the substrate 41. As a result, a vapor deposition layer 49 can be formed on the first electrode 42 as shown in FIG. In addition, the space between the base material 41 and the lid member 21 c is appropriately partitioned by the protrusions 44. For this reason, it is prevented that the vapor deposition material 48 is scattered over a wide area in the space between the base material 41 and the lid member 21c.

(Other variations)
In the above-described embodiment and each modification, an example in which the base material 41 is supplied as a single wafer has been shown. However, the present invention is not limited to this, and the base material 41 may be supplied in a roll-to-roll manner. In this case, by using a movable stage or the like that brings the base material 41 supplied by roll-to-roll closer to the lid 21c, the base is the same as in the case of the above-described embodiment and each modification. The material 41 can be partially covered with the lid material 21c.

  Further, in the above-described embodiment and each modification, an example in which the organic semiconductor element 40 is an organic EL is shown. However, the type of the organic semiconductor element manufactured by the above-described element manufacturing apparatus 10 and the element manufacturing method is not particularly limited. For example, it is possible to manufacture various organic semiconductor elements such as organic transistor devices and organic solar cell devices using the element manufacturing apparatus 10 and the element manufacturing method described above. In the organic transistor device, known materials can be used as the organic semiconductor layer and other components, and for example, those described in JP-A-2009-87996 can be used. Similarly, in an organic solar cell device, a known layer can be used as a photoelectric conversion layer composed of an organic semiconductor layer and other components, for example, those described in JP 2011-151195 A Can do. The element manufacturing apparatus 10 and the element manufacturing method described above may be applied not only to the manufacture of organic semiconductor elements but also to the manufacture of inorganic semiconductor elements.

Further, in the above-described embodiment and each modification, an example is shown in which the adhesion process and the peeling process are sequentially performed in the same chamber 15a. However, the present invention is not limited to this, and although not shown in the drawings, first, the contact process may be performed in the chamber 15a, and then the above-described removal process, the peeling process, and the like may be performed in another chamber.
When the adhesion process and the peeling process are performed in separate chambers, the lid supplied by a roll-to-roll is used to transport the intermediate product 50 to which the lid material 21c is adhered to another chamber. The material 21c is cut. For this reason, there is a possibility that debris generated due to cutting floats in the chamber 15a and adheres to the intermediate product 50 which is subsequently carried into the chamber 15a. Considering this point, it can be said that it is preferable that the adhesion process and the peeling process are sequentially performed in the same chamber 15a.

  Further, in the above-described embodiment and each modified example, an example in which the film forming process is a process of forming a film to be the second electrode 46 on the intermediate product 50 in an environment adjusted to the third pressure. It was. However, the present invention is not limited to this, and as long as a film is formed on the intermediate product 50 in an environment adjusted to the third pressure, the types of films and layers formed by the film forming process are particularly limited. Absent.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

DESCRIPTION OF SYMBOLS 10 Element manufacturing apparatus 20 Sealing mechanism 21c Lid material 30 Removal mechanism 31 Light irradiation part 40 Organic-semiconductor element 50 Intermediate product

Claims (15)

An element manufacturing method for forming an element on a substrate,
Forming an intermediate product including the base material and a protrusion extending in a normal direction of the base material;
Covering the intermediate product with the first surface of the lid from the side of the protrusion in an environment controlled to a first pressure;
Adjusting the pressure around the lid material at least partially to a second pressure higher than the first pressure on the second surface side of the lid material on the opposite side of the first surface; An adhesion step of closely adhering the first surface of the intermediate product to the intermediate product;
A peeling step of peeling the lid material from the intermediate product;
Forming a film on the intermediate product under an environment adjusted to a third pressure, and
The device manufacturing method, wherein the second pressure is lower than atmospheric pressure. The element manufacturing method according to claim 1, wherein a differential pressure between the second pressure and the first pressure is in a range of 1 × 10 ¹ Pa to 5 × 10 ⁴ Pa. The element is provided on the base material, a plurality of first electrodes provided on the base material, an auxiliary electrode provided between the first electrodes and the protrusion, and the first electrode. An organic semiconductor layer, and a second electrode provided on the organic semiconductor layer and the auxiliary electrode,
The intermediate product includes the base material, the plurality of first electrodes provided on the base material, the auxiliary electrode and the protrusion provided between the first electrodes, the first electrode and The organic semiconductor layer provided on the auxiliary electrode,
The element manufacturing method further includes a removal step of removing the organic semiconductor layer provided on the auxiliary electrode after the adhesion step,
3. The element manufacturing method according to claim 1, wherein the film forming step is a step of forming a film to be the second electrode on the intermediate product after the removing step and the peeling step. The auxiliary electrode is partially covered by the protrusion,
The element removal method according to claim 3, wherein the removing step includes a step of irradiating light to the organic semiconductor layer on the auxiliary electrode disposed adjacent to the protrusion. The protrusion is at least partially covered by the auxiliary electrode;
The element manufacturing method according to claim 3, wherein, in the removing step, the organic semiconductor layer on the auxiliary electrode located on the protrusion is removed. A vapor deposition material is provided on the first surface of the lid member,
The element manufacturing method according to claim 1, wherein the element manufacturing method includes a step of irradiating the vapor deposition material with light after the adhesion step to deposit the vapor deposition material on the base material. The lid material is supplied roll-to-roll,
The element manufacturing method according to claim 1, wherein the adhesion step and the peeling step are sequentially performed in the same chamber. An element manufacturing apparatus for forming an element on a substrate,
A protrusion forming apparatus for forming a protrusion extending in the normal direction of the base on the base;
A sealing mechanism for bringing the first surface of the lid material into close contact with the intermediate product including the base material and the protrusion from the side of the protrusion, and
In the environment controlled to the first pressure, the sealing mechanism covers the intermediate product from the protrusion side using the first surface of the lid member, and then is on the opposite side of the first surface. On the second surface side of the lid material, the pressure around the lid material is at least partially adjusted to a second pressure that is higher than the first pressure, so that the first surface of the lid material becomes the intermediate product. It is configured to adhere,
The element manufacturing apparatus further includes a film forming apparatus that forms a film on the intermediate product in an environment adjusted to a third pressure after the lid member is peeled from the intermediate product.
The device manufacturing apparatus, wherein the second pressure is a pressure lower than atmospheric pressure. The element manufacturing apparatus according to claim 8, wherein a differential pressure between the second pressure and the first pressure is in a range of 1 × 10 ¹ Pa to 5 × 10 ⁴ Pa. The element is provided on the base material, a plurality of first electrodes provided on the base material, an auxiliary electrode provided between the first electrodes and the protrusion, and the first electrode. An organic semiconductor layer, and a second electrode provided on the organic semiconductor layer and the auxiliary electrode,
The intermediate product includes the base material, the plurality of first electrodes provided on the base material, the auxiliary electrode and the protrusion provided between the first electrodes, the first electrode and The organic semiconductor layer provided on the auxiliary electrode,
The element manufacturing apparatus further includes a removal mechanism for removing the organic semiconductor layer provided on the auxiliary electrode while the lid member is in close contact with the intermediate product,
In the film forming apparatus, the organic semiconductor layer provided on the auxiliary electrode is removed by the removing mechanism, and then the lid material is peeled from the intermediate product, and then the film to be the second electrode is The element manufacturing apparatus according to claim 8 or 9, which is formed on an intermediate product. The auxiliary electrode is partially covered by the protrusion,
The element manufacturing apparatus according to claim 10, wherein the removal mechanism includes a light irradiation unit that irradiates light to the organic semiconductor layer on the auxiliary electrode disposed adjacent to the protrusion. The protrusion is at least partially covered by the auxiliary electrode;
The element manufacturing apparatus according to claim 10, wherein the removal mechanism is configured to remove the organic semiconductor layer on the auxiliary electrode located on the protrusion. A vapor deposition material is provided on the first surface of the lid member,
The element manufacturing apparatus includes a vapor deposition mechanism that irradiates the vapor deposition material with light while the lid member is in close contact with the intermediate product to deposit the vapor deposition material on the base material. Or the device manufacturing apparatus according to 9. The sealing mechanism has a cover material supply unit that supplies the cover material in a roll-to-roll manner,
The lid material supply unit includes an unwinding unit that winds the lid material toward the intermediate product, and a winding unit that winds the lid material peeled off from the intermediate product,
The element manufacturing apparatus according to any one of claims 8 to 13, wherein the unwinding unit and the winding unit are arranged in the same chamber. The sealing mechanism is configured to adjust the pressure around the lid member partially to a second pressure higher than the first pressure on the second surface side of the lid member on the opposite side of the first surface. Having a pressure part,
The pressurizing unit includes a light-transmitting substrate and a packing provided on the substrate, and the space surrounded by the lid member, the substrate, and the packing is the first portion of the lid member. The element manufacturing apparatus according to any one of claims 8 to 14, which is a sealed space adjusted to the second pressure on the second surface side.

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