JP2015062995A - Manufacturing method of ink jet head and ink jet head - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing method of an ink jet head and the ink jet head, capable of achieving both suppression of crosstalk and improvement of ink ejection accuracy.SOLUTION: There are provided a manufacturing method of an ink jet head and the ink jet head. In the ink jet head, a first silicon layer 11 forms a diaphragm 10 to be deformed by receiving pressure from provided multiple pressure generation means, for giving ink ejection pressure to multiple pressure chambers 120 corresponding to the respective pressure generation means. An etching stop layer 13 is stacked between the first silicon layer 11 and a second silicon layer 12 for forming the multiple pressure chambers 120, to form a flow path forming substrate 1, and then etching is performed from a front surface of the first silicon layer 11 to the etching stop layer 13, thus recessed grooves 110 for dividing adjacent pressure generation means from each other are formed.

Description

  The present invention relates to an ink jet head manufacturing method and an ink jet head, and more specifically, an ink jet head manufacturing method and an ink jet head manufacturing method for causing ink droplets to be ejected from nozzle openings by causing pressure fluctuations in a pressure chamber by vibration of a diaphragm. About.

  A part of the pressure generating chamber that communicates with the nozzle opening that ejects ink is constituted by a diaphragm, the diaphragm is deformed by a piezoelectric vibrator, the pressure generating chamber is pressurized, and ink droplets are ejected from the nozzle opening. Ink jet heads are known.

  In Patent Document 1, in a method of manufacturing a flow path forming substrate using an SOI substrate, etching is easily and reliably stopped by an etching stop layer (insulator layer) when a pressure chamber is formed by etching a silicon layer. It is described that the pressure chamber is formed with high accuracy.

  In recent years, the demand for high-speed and high-precision recording in an ink jet recording apparatus has increased, and a high-density array of nozzles has been demanded. Accordingly, it is necessary to arrange the pressure chambers at high density.

  As one means of high-density arrangement, it is conceivable to downsize individual pressure chambers and piezoelectric vibrators. However, since a certain area is required to obtain the pressure necessary for ink ejection, there is a limit to downsizing.

  As another means of high density arrangement, when pressure chambers and piezoelectric elements are arranged at high density, pressure fluctuations occur due to driving of the piezoelectric elements that deform the adjacent pressure chambers, so-called crosstalk that lowers discharge accuracy. There was a problem that occurred.

  Patent Documents 2 and 3 describe a configuration in which a recess is provided between adjacent piezoelectric elements. By providing the recess, the displacement amount of the pressure chamber can be increased and the crosstalk can be reduced.

JP 2001-105611 A JP 2009-83262 A JP 2008-173813 A

  However, the techniques described in Patent Documents 2 and 3 have the following problems.

  First, Patent Document 2 has a configuration in which a piezoelectric layer is laminated on a diaphragm having a recess. However, not only the shape of the recess but also the thickness of the piezoelectric layer on the recess tends to vary. As a result, there is a problem that the discharge accuracy is lowered.

  Moreover, in patent document 3, the recessed part of the depth which reaches | attains the side wall which forms a pressure chamber at least is formed. However, when the concave portion is formed on the side wall, when the depth of the concave portion varies, the influence on the discharge performance of the nozzle communicating with the adjacent pressure chamber is large, and there is a problem that the discharge accuracy is reduced.

  SUMMARY OF THE INVENTION An object of the present invention is to provide an ink jet head manufacturing method and an ink jet head capable of suitably achieving both suppression of crosstalk and improvement of ink ejection accuracy.

  Other problems of the present invention will become apparent from the following description.

  The above problems are solved by the following inventions.

1. Provided in a region facing the pressure chamber via a flow path forming substrate in which a plurality of pressure chambers communicating with nozzle openings for discharging ink are formed, and a diaphragm constituting a part of the side wall of the pressure chamber A plurality of pressure generating means for causing pressure fluctuations in the pressure chamber and a recess formed so as to separate the pressure generating means adjacent to the surface of the flow path forming substrate on which the pressure generating means is provided. A method of manufacturing an inkjet head comprising a groove,
A first silicon layer constituting the diaphragm; a second silicon layer for forming the pressure chamber; and the first silicon layer and the second silicon layer. The flow path forming substrate is formed by laminating an etching stop layer that is not etched under the etching conditions of the silicon layer and the second silicon layer, or is etched at a slower etching rate than the first silicon layer and the second silicon layer. Thereafter, the groove having a depth equal to the thickness of the first silicon layer is formed by performing etching until the etching stop layer is reached from the surface of the first silicon layer of the flow path forming substrate. A method of manufacturing an ink-jet head.

2. 2. The method of manufacturing an ink-jet head according to claim 1, wherein the groove is provided at least in a central portion between adjacent pressure generating means.

3. 3. The method of manufacturing an ink-jet head according to claim 1 or 2, wherein the groove is provided at least at a position where adjacent pressure generating means is closest.

4). Etching is performed from the surface of the second silicon layer of the flow path forming substrate until the etching stop layer is reached, thereby forming the pressure chamber having a depth equal to the thickness of the second silicon layer. 4. The method for producing an ink jet head according to any one of 1 to 3 above.

5. The method for manufacturing an ink jet head according to any one of the above items 1 to 4, wherein the groove and the pressure chamber are formed so that the formation regions do not overlap in a plan view.

6). A lower electrode layer serving as a common electrode for driving the plurality of pressure generating means is formed by removing a region overlapping the region where the groove is formed on the surface of the first silicon layer of the flow path forming substrate. 6. The method of manufacturing an ink jet head according to any one of 1 to 5, wherein the groove is etched using the lower electrode layer as an etching mask.

7). The process for manufacturing an ink jet head according to any one of 1 to 6 the material of the etch stop layer is characterized by a SiO _2.

8). An inkjet head manufactured by the method for manufacturing an inkjet head according to any one of 1 to 7 above.

9. Provided in a region facing the pressure chamber via a flow path forming substrate in which a plurality of pressure chambers communicating with nozzle openings for discharging ink are formed, and a diaphragm constituting a part of the side wall of the pressure chamber A plurality of pressure generating means for causing pressure fluctuations in the pressure chamber and a surface provided with the pressure generating means of the flow path forming substrate so as to separate the adjacent pressure generating means. An ink-jet head comprising: a first silicon layer constituting the diaphragm; a second silicon layer in which the pressure chamber is formed; and the first silicon. Between the first silicon layer and the second silicon layer, and is not etched when the first silicon layer and the second silicon layer are etched, or has an etching rate higher than that of the first silicon layer and the second silicon layer. slow Made by laminating a Tsu quenching stop layer, wherein the groove is an ink jet head is characterized by having a depth equal to the thickness of the first silicon layer.

10. 10. The ink jet head according to 9, wherein the groove is provided at least in a central portion between adjacent pressure generating means.

11. 11. The ink jet head according to claim 9, wherein the groove is provided at least at a position where adjacent pressure generating means is closest.

12 The inkjet head according to any one of 9 to 11, wherein the pressure chamber has a depth equal to a thickness of the second silicon layer.

13. 13. The method of manufacturing an ink jet head according to any one of 9 to 12, wherein the groove and the pressure chamber are provided so that formation regions do not overlap in a plan view.

14 The inkjet head according to any one of the 9 to 13 the material of the etch stop layer is characterized by a SiO _2.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method and inkjet head of an inkjet head which can carry out the compatibility of suppression of crosstalk and the improvement of ink discharge precision suitably can be provided.

The top view which shows an example of the head substrate with which the inkjet head which concerns on this invention is provided FIG. 1 (ii)-(ii) line plan view (Iii)-(iii) line sectional view of FIG. The top view which shows the other example of the head board | substrate with which the inkjet head which concerns on this invention is provided. The figure explaining the 1st aspect of the manufacturing method of the inkjet head which concerns on this invention. The figure explaining the 2nd aspect of the manufacturing method of the inkjet head which concerns on this invention.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  FIG. 1 is a plan view showing an example of a head substrate provided in an ink jet head according to the present invention. 2 is a plan view taken along line (ii)-(ii) of FIG. 1, and FIG. 3 is a cross-sectional view taken along line (iii)-(iii) of FIG. 1, showing the layer structure of the head substrate.

  H1 is a head substrate, and the head substrate H1 includes a flow path forming substrate 1, a piezoelectric element 2, an intermediate plate 3, and a nozzle plate 4.

  The flow path forming substrate 1 is composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 which are provided on both surfaces and are both made of Si.

  The etching stop layer 13 performs etching that proceeds from both surfaces of the flow path forming substrate 1 (the surfaces of the first silicon layer 11 and the second silicon layer 12) toward the etching stop layer 13, and the etching stop layer 13 It has a function that can stop when it reaches 13.

Accordingly, the etching stop layer 13 has a surface in contact with the first silicon layer 11 and the second silicon layer 12 provided on both surfaces, and Si constituting the first silicon layer 11 and the second silicon layer 12. Are made of different materials. As such a material, it is not etched under the etching conditions for etching the first silicon layer 11 and the second silicon layer 12, or the etching rate is higher than that of the first silicon layer 11 and the second silicon layer 12. Slow ones are used, and specifically, SiO ₂ , SiN, SiC and the like can be preferably exemplified.

As a substrate having silicon layers on both sides of an SiO ₂ layer that can function as an etching stop layer, what is called a so-called SOI (Silicon On Insulator) substrate in the transistor field is known. Can be preferably used.

  A plurality of pressure chambers 120 communicating with the nozzle openings 41 for discharging ink are formed in the second silicon layer 12 constituting the flow path forming substrate 1.

  The pressure chamber 120 has the same depth as the thickness of the second silicon layer 12 (the vertical depth in FIGS. 2 and 3).

  Reference numeral 121 denotes a common flow path. The common flow path 121 communicates with an ink tank (not shown) and communicates with each pressure chamber 120 via an ink supply path 122 provided for each pressure chamber 120. .

  As a result, ink from the ink tank can be supplied from the common channel 121 to each pressure chamber 120 via the ink supply channel 122.

  The common flow path 121 and the ink supply path 122 are provided in the second silicon layer 12 of the flow path forming substrate 1, and have the same depth as the thickness of the second silicon layer 12, similar to the pressure chamber 120. ing.

  The nozzle plate 4 is bonded to the lower surface (the surface on the second silicon layer 12 side) of the flow path forming substrate 1 via the intermediate plate 3.

  The intermediate plate 3 is made of, for example, a glass substrate (Tempax glass) or the like, and is anodically bonded to the lower surface of the flow path forming substrate 1.

  The intermediate plate 3 is provided with a through hole 30 that communicates with the pressure chamber 120 and a nozzle opening 41 formed in the nozzle plate 4.

  The nozzle plate 4 includes a through hole 40 that forms a nozzle opening 41 for discharging droplets on the lower surface 4a.

  The nozzle plate 4 is joined to the intermediate plate 3 so that a through hole 40 provided in the nozzle plate 4 communicates with a through hole 30 provided in the intermediate plate. Thereby, the nozzle opening 41 communicates with the pressure chamber 120.

  An ink repellent film is preferably provided on the lower surface 4a of the nozzle plate 4 where the nozzle openings 41 are provided.

  A plurality of piezoelectric elements 2 are provided on the upper surface (surface on the first silicon layer 11 side) 1a of the flow path forming substrate 1 in correspondence with the respective pressure chambers 120. More specifically, the piezoelectric element 2 is a region facing each pressure chamber 120 via the vibration plate 10 composed of the first silicon layer 11 and the etching stop layer 13 that are part of the side wall of the pressure chamber 120. Is provided.

  The piezoelectric element 2 serving as a pressure generating unit is deformed by applying a driving voltage, and has a function of causing pressure fluctuation in the pressure chamber 120 via the diaphragm 10.

  In the illustrated example, the piezoelectric element 2 is deformed by application of a driving voltage from the driving electrode.

  The piezoelectric element 2 is laminated between a lower electrode layer 21 provided on the upper surface 1a of the flow path forming substrate 1 and serving as a common electrode, and an upper electrode layer 22 provided on the upper surface of the piezoelectric element 2 and serving as an individual electrode. Thus, the drive voltage can be applied.

  The piezoelectric element 2 and the electrodes 21 and 22 for applying a driving voltage to the piezoelectric element may be bonded to the upper surface 1a of the flow path forming substrate 1 via an adhesive layer, or may be flown by film formation and lithography. It may be formed on the upper surface 1 a of the path forming substrate 1.

  On the upper surface 1a of the flow path forming substrate 1, that is, on the surface of the first silicon layer 11 on which the piezoelectric element 2 of the flow path forming substrate 1 is provided, a groove 110 is provided so as to separate the adjacent piezoelectric elements 2 from each other. Has been.

  In the inkjet head according to the present invention, the groove 110 is recessed by being etched from the surface of the first silicon layer 11 of the flow path forming substrate until reaching the etching stop layer.

  That is, in the ink jet head according to the present invention, the groove 110 is defined at a position where the groove bottom reaches the etching stop layer 13 and has a depth equal to the thickness of the first silicon layer 11. The “depth of the groove 110” in the present invention refers to the depth from the upper surface (surface of the first silicon layer 11) 1a of the flow path forming substrate 1 toward the etching stop layer.

  As a result, the depth of the groove 110 between the adjacent piezoelectric elements 2 is uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 is also highly accurate. Therefore, it is possible to obtain an effect that it is possible to suitably achieve both suppression of crosstalk and improvement of ink ejection accuracy.

  In the above description, the case where a plurality of grooves 110 are provided independently for each adjacent pressure chamber 120 has been described. However, the present invention is not limited to this, and as described below, one groove 110 is provided. A groove may be provided in common for two or more between adjacent pressure chambers.

  FIG. 4 is a plan view showing another example of a head substrate provided in the ink jet head according to the present invention. In the figure, the same reference numerals as those in FIGS.

  In the illustrated head substrate H <b> 2, one row of nozzle openings 41 is formed by two rows of pressure chambers 120 each having a plurality of pressure chambers 120 arranged in parallel.

  The two rows of pressure chambers 120 are arranged in parallel so that the pressure chambers 120 of each row are arranged in a staggered manner.

  One groove 110 having a depth similar to that of the example of FIGS. 1 to 3 is provided in common between the pressure chambers 120 adjacent to each other in a staggered pattern.

  As a result, the depth of the groove 110 between the adjacent piezoelectric elements 2 is uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 is also highly accurate. Therefore, it is possible to obtain an effect that it is possible to suitably achieve both suppression of crosstalk and improvement of ink ejection accuracy.

  In the present invention, the groove 110 is preferably provided at least in a region that does not overlap the pressure chamber 120 in plan view. In the present invention, “plan view” is orthogonal to “a surface fixed to the etching stop layer 11 of one silicon layer 12” and “a surface fixed to the etching stop layer 11 of the other silicon layer 13”. It is synonymous with seeing from the direction to do.

  In the present invention, preferably, the groove 110 and the pressure chamber 120 are formed so that the formation regions do not overlap in a plan view, thereby improving the stability of the diaphragm 10 and improving the ink ejection accuracy. An effect that can be further improved is obtained.

  More specifically, as shown in FIGS. 3 and 4, the groove 110 is preferably provided at least in a central portion between the adjacent pressure chambers 120 in a plan view.

  Further, as shown in FIGS. 3 and 4, the groove 110 is preferably provided at least at a position where the adjacent pressure chambers 120 are closest to each other in plan view.

  The width of the groove 110 is not particularly limited, but is preferably in the range of 0.5 to 2 times the depth of the groove 110 (that is, the thickness of the other silicon layer).

  The width of the groove 110 is preferably in the range of 0.1 to 0.3 times the closest distance between adjacent pressure chambers 120.

  When the depth of the pressure chamber 120 is the same as the thickness of the second silicon layer 12, the depth of the groove is “thickness of the flow path forming substrate 1” = “depth of the pressure chamber 120” + “etching” The relational expression of “thickness of stop layer 13” + “depth of groove 110” is satisfied.

  In the present invention, the lower electrode layer 21 provided on the upper surface 1a of the flow path forming substrate 1 is preferably provided on the upper surface 1a so as not to cover the inside or upper portion of the groove 110 of the upper surface 1a. . Thereby, the uniformity of the groove 110 formed with high accuracy is not impaired, and both suppression of crosstalk and improvement of ink ejection accuracy can be achieved more suitably.

  In the above description, the case where the shape of the groove 110 is linear has been described, but in the present invention, the shape of the groove 110 is not necessarily linear, and may be curved.

  In addition, the width of the groove 110 is not necessarily equal to the entire width of the groove 110, and the depth direction of the groove 110 or the length direction of the groove 110 (direction parallel to the upper surface 1 a of the flow path forming substrate 1). ) May be partially changed.

  In the flow path forming substrate 1, the thicknesses of the first silicon layer 11, the second silicon layer 12, and the etching stop layer 13 are not particularly limited, but the thickness of the first silicon layer 11 is The thickness is preferably in the range of 5 μm or more and 50 μm or less, the thickness of the second silicon layer 12 is preferably in the range of 50 μm or more and 200 μm or less, and the thickness of the etching stop layer is in the range of 0.5 μm or more and 2 μm or less. Is preferred.

  Next, an inkjet head manufacturing method according to the present invention for manufacturing the inkjet head described above will be described.

  FIG. 5 is a diagram for explaining a first aspect of the method of manufacturing an ink jet head according to the present invention.

  First, a flow path forming substrate 1 composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 both of which are provided on both surfaces of Si is prepared (FIG. 5A). . Here, a lower electrode layer 21 is laminated in advance on the upper surface (surface on the first silicon layer 11 side) 1 a of the flow path forming substrate 1.

  Next, the pressure chamber 120 is formed by etching a predetermined region of the second silicon layer 12 of the flow path forming substrate 1 from the surface of the second silicon layer 12 until it preferably reaches the etching stop layer ( FIG. 5B).

  Next, by etching a predetermined region in the first silicon layer 11 of the flow path forming substrate 1 from the surface of the first silicon layer 11 until reaching the etching stop layer, a groove 110 is formed (FIG. 5C). )). At this time, the groove 110 is etched using the lower electrode layer 21 as an etching mask by previously removing a predetermined region of the lower electrode layer 21, that is, a region overlapping with the region where the groove 110 is formed, by lithography. This is preferable because the groove 110 can be formed with high accuracy.

  Next, the piezoelectric element 2 and the upper electrode layer 22 are joined to the region corresponding to the pressure chamber on the upper surface 1a of the flow path forming substrate 1 via the lower electrode layer 21 (FIG. 5D).

  Next, the nozzle plate 4 provided with a through hole 40 having one end serving as a nozzle opening 41 through the intermediate plate 3 provided with the through hole 30 on the surface of the flow path forming substrate 1 on the second silicon layer 12 side. Are bonded to obtain a head substrate H3 (FIG. 5E).

  On the other hand, FIG. 6 is a figure explaining the 2nd aspect of the manufacturing method of the inkjet head based on this invention.

  First, a flow path forming substrate 1 composed of an etching stop layer 13 and a first silicon layer 11 and a second silicon layer 12 both of which are provided on both sides of Si is prepared (FIG. 6A). .

  Next, the lower electrode layer 21, the piezoelectric layer (piezoelectric element) 2 and the upper electrode layer 22 are formed on the upper surface (surface of the first silicon layer 11) 1a of the flow path forming substrate 1, and each layer 21, 2 and 22 are patterned into a predetermined shape by lithography (FIG. 6B).

  Next, a predetermined region in the first silicon layer 11 of the flow path forming substrate 1 is etched from the surface of the first silicon layer 11 until it reaches the etching stop layer, thereby forming a groove 110 (FIG. 6C). )). At this time, the groove 110 is etched using the lower electrode layer 21 as an etching mask by previously removing a predetermined region of the lower electrode layer 21, that is, a region overlapping with the region where the groove 110 is formed, by lithography. This is preferable because the groove 110 can be formed with high accuracy.

  Next, the pressure chamber 120 is formed by etching a predetermined region of the second silicon layer 12 of the flow path forming substrate 1 from the surface of the second silicon layer 12 until it preferably reaches the etching stop layer ( FIG. 6 (d)).

  Next, the nozzle plate 4 provided with a through hole 40 having one end serving as a nozzle opening 41 through the intermediate plate 3 provided with the through hole 30 on the surface of the flow path forming substrate 1 on the second silicon layer 12 side. Are bonded to obtain a head substrate H4 (FIG. 6E).

  As described above, an ink jet head having a head substrate having the groove 110 similar to that described with reference to FIGS. 1 to 4 can be manufactured.

  In the inkjet head manufacturing method according to the present invention, since the etching stop layer 13 is used when the groove 110 is etched, the position of the groove bottom is defined at a position reaching the etching stop layer 13. A depth equal to the thickness of the silicon layer 11 can be provided with high accuracy.

  Thereby, the depth of the groove 110 between the adjacent piezoelectric elements 2 can be made uniform between any piezoelectric elements 2, crosstalk between the piezoelectric elements 2 can be prevented uniformly, and the displacement of the pressure chamber 120 can be prevented. Since the amount can be made uniform with high accuracy, it is possible to obtain an effect capable of suitably achieving both suppression of crosstalk and improvement of ink ejection accuracy.

In the present invention, the etching method for forming the groove 110 and the pressure chamber 120 is not particularly limited. However, when the material of the etching stop layer 13 is SiO ₂ , an etching gas such as sulfur hexafluoride (SF ₆ ) is used. The dry etching method used can be preferably used.

  In the etching for forming the groove 110 and the pressure chamber 120, it is preferable to use an etching mask. As described above, when the groove 110 is formed, the lower electrode layer 21 serving as a common electrode is used as an etching mask. It is preferable to use as.

  In the present invention, (a) a step of forming a groove 110 in the first silicon layer 11, (b) a step of forming a pressure chamber 120 in the second silicon layer 12, and (c) a flow path forming substrate 1 The step of forming the piezoelectric element on the upper surface 1a may be performed in any order. In particular, in the present invention using an etching stop layer, the groove 110 can be formed with high accuracy even when the formation of the groove 110 (step (b)) and the formation of the pressure chamber 120 (step (b)) are performed simultaneously by etching. In addition, since the pressure chamber 120 can be formed, it is possible to more easily achieve both the suppression of crosstalk and the improvement of ink ejection accuracy.

1: flow path forming substrate 10: diaphragm 11: first silicon layer 110: groove 12: second silicon layer 120: pressure chamber 121: common flow path 122: ink supply path 13: etching stop layer 1a: upper surface 2 : Piezoelectric element (piezoelectric layer)
21: Lower electrode layer (common electrode)
22: Upper electrode layer (individual electrode)
3: Intermediate plate 30: Through hole 4: Nozzle plate 40: Through hole 41: Nozzle opening 4a: Lower surface H1 to H4: Head substrate

Claims (14)

A flow path forming substrate in which a plurality of pressure chambers communicating with nozzle openings for discharging ink are formed;
A plurality of pressure generating means provided in a region facing the pressure chamber via a diaphragm constituting a part of a side wall of the pressure chamber, and causing pressure fluctuation in the pressure chamber;
A groove recessed so as to divide between the pressure generating means adjacent to the surface of the flow path forming substrate provided with the pressure generating means;
An inkjet head manufacturing method comprising:
A first silicon layer constituting the diaphragm; a second silicon layer for forming the pressure chamber; and the first silicon layer and the second silicon layer. The flow path forming substrate is formed by laminating an etching stop layer that is not etched under the etching conditions of the silicon layer and the second silicon layer, or is etched at a slower etching rate than the first silicon layer and the second silicon layer. rear,
Etching is performed from the surface of the first silicon layer of the flow path forming substrate to the etching stop layer, thereby forming the groove having a depth equal to the thickness of the first silicon layer. A method for manufacturing an inkjet head.   2. The method of manufacturing an ink jet head according to claim 1, wherein the groove is provided at least in a central portion between adjacent pressure generating means.   3. The method of manufacturing an ink jet head according to claim 1, wherein the groove is provided at least at a position where the adjacent pressure generating means is closest.   Etching is performed from the surface of the second silicon layer of the flow path forming substrate until the etching stop layer is reached, thereby forming the pressure chamber having a depth equal to the thickness of the second silicon layer. The method for manufacturing an ink-jet head according to claim 1, wherein the ink-jet head is manufactured according to claim 1.   5. The method of manufacturing an ink jet head according to claim 1, wherein the groove and the pressure chamber are formed such that formation regions do not overlap in a plan view. A lower electrode layer serving as a common electrode for driving the plurality of pressure generating means is formed by removing a region overlapping the region where the groove is formed on the surface of the first silicon layer of the flow path forming substrate. Forming,
6. The method for manufacturing an ink jet head according to claim 1, wherein the groove is etched using the lower electrode layer as an etching mask. The method of manufacturing an ink jet head according to claim 1, wherein a material of the etching stop layer is SiO ₂ .   An ink jet head manufactured by the method for manufacturing an ink jet head according to claim 1. A flow path forming substrate in which a plurality of pressure chambers communicating with nozzle openings for discharging ink are formed;
A plurality of pressure generating means provided in a region facing the pressure chamber via a diaphragm constituting a part of a side wall of the pressure chamber, and causing pressure fluctuation in the pressure chamber;
A groove that is recessed so as to separate the adjacent pressure generating means from the surface of the flow path forming substrate on which the pressure generating means is provided;
An inkjet head comprising:
The flow path forming substrate includes a first silicon layer constituting the diaphragm, a second silicon layer in which the pressure chamber is formed, and between the first silicon layer and the second silicon layer. And is formed by stacking an etching stop layer that is not etched at the time of etching the first silicon layer and the second silicon layer or has an etching rate slower than that of the first silicon layer and the second silicon layer,
The inkjet head according to claim 1, wherein the groove has a depth equal to a thickness of the first silicon layer.   The inkjet head according to claim 9, wherein the groove is provided at least in a central portion between adjacent pressure generating means.   11. The ink jet head according to claim 9, wherein the groove is provided at least at a position where the adjacent pressure generating means is closest.   The inkjet head according to claim 9, wherein the pressure chamber has a depth equal to a thickness of the second silicon layer.   The method for manufacturing an ink jet head according to claim 9, wherein the groove and the pressure chamber are provided so that formation regions do not overlap in a plan view. The inkjet head according to claim 9, wherein a material of the etching stop layer is SiO ₂ .

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