JP2015061025A - GaSb/InAs/Si (111) STRUCTURE AND METHOD FOR FORMING THE SAME EXCELLENT IN COMPLETENESS OF SURFACE SMOOTHNESS AND CRYSTAL STRUCTURE, AND MOS DEVICE AND INFRARED RAY DETECTION DEVICE USING THE STRUCTURE - Google Patents
GaSb/InAs/Si (111) STRUCTURE AND METHOD FOR FORMING THE SAME EXCELLENT IN COMPLETENESS OF SURFACE SMOOTHNESS AND CRYSTAL STRUCTURE, AND MOS DEVICE AND INFRARED RAY DETECTION DEVICE USING THE STRUCTURE Download PDFInfo
- Publication number
- JP2015061025A JP2015061025A JP2013195290A JP2013195290A JP2015061025A JP 2015061025 A JP2015061025 A JP 2015061025A JP 2013195290 A JP2013195290 A JP 2013195290A JP 2013195290 A JP2013195290 A JP 2013195290A JP 2015061025 A JP2015061025 A JP 2015061025A
- Authority
- JP
- Japan
- Prior art keywords
- gasb
- inas
- film
- layer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 110
- 229910000673 Indium arsenide Inorganic materials 0.000 title claims abstract description 93
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000001514 detection method Methods 0.000 title claims description 8
- 239000013078 crystal Substances 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 230000007547 defect Effects 0.000 claims abstract description 19
- 238000001451 molecular beam epitaxy Methods 0.000 claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 238000010276 construction Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 50
- 239000010410 layer Substances 0.000 description 44
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 7
- 239000012528 membrane Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000003917 TEM image Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
本発明は、表面の平坦性および結晶構造の完全性に優れたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造とその形成方法、並びにその構造を用いたＭＯＳデバイスおよび赤外線検出デバイスに関するものである。 The present invention relates to a GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure integrity, a method of forming the same, and a MOS device and an infrared detection device using the structure.
ＧａＳｂ（アンチモン化ガリウム）は半導体装置であるＣＭＯＳのｐチャネル材料や赤外線検出デバイスなどの応用が期待できる。ＧａＳｂウエハは高価なのでＧａＳｂ膜をＳｉ基板上に成長できれば都合がよい。また、ＧａＳｂはＳｉテクノロジーで組み合わせる上でも有利である。 GaSb (gallium antimonide) is expected to be applied to CMOS p-channel materials and infrared detection devices that are semiconductor devices. Since a GaSb wafer is expensive, it is convenient if a GaSb film can be grown on a Si substrate. GaSb is also advantageous when combined with Si technology.
ところが、Ｓｉの格子定数は５．４０Åであり、ＧａＳｂの格子定数は６．０９５Åであり、両者の格子定数は大きく異なるため、Ｓｉ基板上にＧａＳｂの高品質の結晶膜を得ようとすると、貫通転位などの欠陥が膜中に形成されるため、Ｓｉ基板上に高品質のＧａＳｂ結晶からなる結晶膜を得ることは困難であった。 However, the lattice constant of Si is 5.40Å, the lattice constant of GaSb is 6.095Å, and the lattice constants of the two are greatly different. Therefore, when trying to obtain a high-quality GaSb crystal film on the Si substrate, Since defects such as threading dislocations are formed in the film, it has been difficult to obtain a crystal film made of high-quality GaSb crystals on the Si substrate.
この問題を解決するため、非特許文献１には、有機金属気相成長（ＭＯＣＶＤ）法を用い、Ｓｉ（１１１）基板上に４核生成層（four nucleation layers）程度のＩｎＡｓ層をバッファー層として設け、さらにその上にＧａＳｂ膜を形成する技術が提案されている。そして、この技術により、転位密度がかなり少なく高品質なＧａＳｂ結晶膜が得られたと報告されている。 In order to solve this problem, Non-Patent Document 1 uses a metal organic chemical vapor deposition (MOCVD) method and uses an InAs layer of about four nucleation layers on a Si (111) substrate as a buffer layer. A technique has been proposed in which a GaSb film is formed thereon. It has been reported that a high-quality GaSb crystal film with a considerably low dislocation density was obtained by this technique.
しかしながら、非特許文献１の方法でＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を作成した場合、ＩｎＡｓ膜成長時に膜中に高密度の欠陥が生成されるだけでなく、ＩｎＡｓ膜の表面に高密度の穴が形成される。このため、その上に形成されたＧａＳｂ結晶層の表面も平坦性に劣る。これはＣＭＯＳのｐチャネル材料等の半導体装置に応用した場合、界面準位密度の増加や移動度劣化という問題を生じさせ、さらに改善される余地があった。また、非特許文献１の方法ではＩｎＡｓ層の厚さを最低でも２２０ｎｍ以上にする必要があるが、非特許文献３に示されるように、ＩｎＡｓ層の厚さが１０ｎｍを超えると、ＧａＳｂ中のキャリアがＩｎＡｓ層中に流出し、ＧａＳｂがｐチャネル層として機能しなくなる。そのため、ＩｎＡｓ層の厚さを９ｎｍ以下にする必要がある。 However, when the GaSb / InAs / Si (111) structure is created by the method of Non-Patent Document 1, not only high-density defects are generated in the film during growth of the InAs film, but also high-density on the surface of the InAs film. A hole is formed. For this reason, the surface of the GaSb crystal layer formed thereon is also inferior in flatness. When this is applied to a semiconductor device such as a CMOS p-channel material, it causes problems such as an increase in interface state density and mobility degradation, and there is room for further improvement. Further, in the method of Non-Patent Document 1, the thickness of the InAs layer needs to be at least 220 nm. However, as shown in Non-Patent Document 3, if the thickness of the InAs layer exceeds 10 nm, Carriers flow out into the InAs layer, and GaSb does not function as a p-channel layer. Therefore, the thickness of the InAs layer needs to be 9 nm or less.
本発明は、以上のような従来技術の実情に鑑みてなされたもので、表面の平坦性および結晶構造の完全性に優れたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造とその形成方法を提供することを課題とする。 The present invention has been made in view of the above-described prior art, and provides a GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure integrity and a method for forming the same. Is an issue.
また、本発明は上記構造を用いたＭＯＳデバイスおよび赤外線検出デバイスを提供することをも課題とする。 Another object of the present invention is to provide a MOS device and an infrared detection device using the above structure.
本発明者らは、分子線エピタキシー（ＭＢＥ）法を用いてＳｉ（１１１）基板表面上にＩｎＡｓの単結晶膜を形成する研究を行ってきており、非特許文献２において報告している。この研究では、分子線エピタキシーを用いて、Ｓｉ（１１１）基板表面上にIｎＡｓを成長させた場合、成長前のＳｉ（１１１）基板の表面状態に応じて、形成されるＩｎＡｓ膜の表面形態が大きく異なることがわかった。すなわち、成長前のＳｉ（１１１）基板の表面の処理に応じて、ＩｎＡｓは二次元的に成長したり、三次元的（島状）に成長したりすることがわかった。そして、ＩｎＡｓが二次元的に成長した場合、ＩｎＡｓ膜とＳｉ（１１１）基板との界面にのみ転位が局在し、ＩｎＡｓ膜中には欠陥が入らないことを確認した。 The present inventors have been researching the formation of an InAs single crystal film on the surface of a Si (111) substrate by using molecular beam epitaxy (MBE), and reported in Non-Patent Document 2. In this study, when InAs is grown on the Si (111) substrate surface using molecular beam epitaxy, the surface morphology of the InAs film formed depends on the surface state of the Si (111) substrate before the growth. It turned out to be very different. That is, it was found that InAs grows two-dimensionally or three-dimensionally (islands) depending on the surface treatment of the Si (111) substrate before growth. Then, when InAs grew two-dimensionally, it was confirmed that dislocations were localized only at the interface between the InAs film and the Si (111) substrate, and no defects were introduced into the InAs film.
本発明者らは、これらの知見に基づいて、Ｓｉ（１１１）基板の表面にＧａＳｂ結晶層を高品質で且つ表面の平坦性に優れた状態で形成することについて鋭意検討を重ねた結果、本発明を完成するに至った。 Based on these findings, the present inventors have conducted extensive studies on forming a GaSb crystal layer on the surface of a Si (111) substrate in a state of high quality and excellent surface flatness. The invention has been completed.
すなわち、本発明によれば、上記課題を解決するために、第１に、清浄化されたＳｉ（１１１）基板表面上に、分子線エピタキシー法で厚さが少なくとも２ｎｍ以上のＩｎＡｓ二次元層をバッファー層として形成した後、さらにその上に、分子線エピタキシー法で表面の平坦性に優れ且つ低欠陥密度であるＧａＳｂエピタキシャル薄膜を形成することを特徴とするＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法が提供される。 That is, according to the present invention, in order to solve the above problems, first, an InAs two-dimensional layer having a thickness of at least 2 nm or more is formed on a cleaned Si (111) substrate surface by a molecular beam epitaxy method. A GaSb / InAs / Si (111) structure characterized by forming a GaSb epitaxial thin film having excellent surface flatness and a low defect density by a molecular beam epitaxy method after being formed as a buffer layer. A forming method is provided.
第２に、上記第１の発明において、得られたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の成長したＧａＳｂエピタキシャル薄膜の面方位が（１１１）Ａ面であることを特徴とするＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法が提供される。 Secondly, in the first invention, the GaSb / InAs / Si (111) structure grown GaSb epitaxial thin film obtained by growing the GaSb epitaxial film has a (111) A plane, and the GaSb / InAs / Si A method of forming a (111) structure is provided.
第３に、上記第１または第２の発明において、得られたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造のＧａＳｂエピタキシャル薄膜の表面のニ乗平均粗さが０．２〜０．３ｎｍであり且つＩｎＡｓ層の厚さが２〜９ｎｍであることを特徴とするＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法が提供される。 Third, in the first or second invention, the surface mean square roughness of the obtained GaSb epitaxial thin film of GaSb / InAs / Si (111) structure is 0.2 to 0.3 nm and InAs A method of forming a GaSb / InAs / Si (111) structure is provided, wherein the layer thickness is 2-9 nm.
第４に、第１から第３のいずれかの発明において、得られたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造のＧａＳｂエピタキシャル薄膜の欠陥密度が８×１０５ｃｍ−２以下であることを特徴とするＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法が提供される。 Fourth, in any one of the first to third inventions, the obtained GaSb / InAs / Si (111) structured GaSb epitaxial thin film has a defect density of 8 × 10 5 cm −2 or less. A method of forming a GaSb / InAs / Si (111) structure is provided.
また、第５に、清浄化されたＳｉ（１１１）基板表面上に、分子線エピタキシー法で形成された厚さが少なくとも２ｎｍ以上のＩｎＡｓ二次元層よりなるバッファー層を設け、さらにその上に分子線エピタキシー法で形成された表面のニ乗平均粗さが０．２〜０．３ｎｍであり且つ欠陥密度が８×１０５ｃｍ−２以下のＧａＳｂエピタキシャル薄膜を設けてなることを特徴とするＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造が提供される。 Fifth, a buffer layer composed of an InAs two-dimensional layer having a thickness of at least 2 nm formed by molecular beam epitaxy is provided on the cleaned Si (111) substrate surface, and further a molecular layer is provided thereon. A GaSb epitaxial thin film having a mean square roughness of a surface formed by a line epitaxy method of 0.2 to 0.3 nm and a defect density of 8 × 10 5 cm −2 or less is provided. A / InAs / Si (111) structure is provided.
また、第６に、上記ＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を備えていることを特徴とするＭＯＳデバイスが提供される。 Sixth, there is provided a MOS device comprising the GaSb / InAs / Si (111) structure.
さらに、第７に、上記ＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を備えていることを特徴とする赤外線検出デバイスが提供される。 Furthermore, seventhly, an infrared detection device characterized by comprising the GaSb / InAs / Si (111) structure is provided.
本発明によれば、表面の平坦性および結晶構造の完全性に優れたＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を提供することができる。 According to the present invention, a GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure integrity can be provided.
また、本発明によれば、上記ＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を用いた性能に優れたＭＯＳデバイスおよび赤外線検出デバイスを提供することが可能となる。 In addition, according to the present invention, it is possible to provide a MOS device and an infrared detection device excellent in performance using the GaSb / InAs / Si (111) structure.
以下、本発明を実施形態に基づいて詳細に説明する。 Hereinafter, the present invention will be described in detail based on embodiments.
本発明のＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法は、清浄化されたＳｉ（１１１）基板表面上に、分子線エピタキシー法で厚さが少なくとも２ｎｍ以上のＩｎＡｓ二次元層をバッファー層として形成した後、さらにその上に、分子線エピタキシー法で表面の平坦性に優れ且つ低欠陥密度であるＧａＳｂエピタキシャル薄膜を形成することを特徴とする。 The method of forming a GaSb / InAs / Si (111) structure according to the present invention uses an InAs two-dimensional layer having a thickness of at least 2 nm or more by a molecular beam epitaxy method on a cleaned Si (111) substrate surface as a buffer layer. After the formation, a GaSb epitaxial thin film having excellent surface flatness and a low defect density is further formed thereon by molecular beam epitaxy.
以下、本発明のＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の形成方法の手順について図１を参照して説明する。 Hereinafter, the procedure of the method for forming the GaSb / InAs / Si (111) structure of the present invention will be described with reference to FIG.
本実施形態では、図１（ａ）の左側に示すように、清浄化されたＳｉ（１１１）基板を用いる。Ｓｉ（１１１）基板を清浄化する方法としては、種々の方法を用いることができるが、例えば、モリブデン製のホルダーにＳｉ（１１１）基板を取り付け、ホルダーの開口部を通して裏面からヒーターで加熱する方法を用いることができる。 In the present embodiment, as shown on the left side of FIG. 1A, a cleaned Si (111) substrate is used. Various methods can be used as a method for cleaning the Si (111) substrate. For example, a method of attaching the Si (111) substrate to a molybdenum holder and heating it with a heater from the back through the opening of the holder. Can be used.
本実施形態では、図１（ｂ）の左側に示すように、清浄化されたＳｉ（１１１）基板上に、分子線エピタキシー法で厚さが少なくとも２ｎｍ以上のＩｎＡｓ二次元層をバッファー層として形成する。ＩｎＡｓ二次元層が２ｎｍ未満であると、ＧａＳｂ成長初期時に表面が荒れたり、欠陥が増えたりするおそれがある。ＩｎＡｓ二次元層の膜厚の上限は、ＩｎＡｓ層の厚さが１０ｎｍを超えると、ＧａＳｂ中のキャリアがＩｎＡｓ層中に流出し、ＧａＳｂがｐチャネル層として機能しなくなるため、９ｎｍ程度が好ましい。ＩｎＡｓ二次元膜の形成は、一般に分子線エピタキシー法で薄膜を形成する超高真空チャンバーを備えた装置を用いて行うことができる。この装置は、反射高速電子線回折（ＲＨＥＥＤ）と走査型トンネル顕微鏡（ＳＴＭ）観察を行うことができるようになっている。本発明において、ＩｎＡｓ層は二次元的に成長し、表面の平坦性および結晶構造の完全性に優れたＧａＳｂを形成するためバッファー層として非常に重要な役割を行う。ＩｎＡｓ層は、先ず、一層のＩｎを蒸着し、次いでＩｎとＡｓを同時に供給して所望の厚さのＩｎＡｓ層とする。膜形成条件としては、基板温度が２５０〜５００℃、Ｖ族／III族フラックス比１０〜１００程度であることが好ましい。Ｓｉ（１１１）基板上にＩｎＡｓ二次元層をバッファー層として形成した場合、転位は両者の界面にのみ局在するようになり、ＩｎＡｓ二次元層中には欠陥がない状態となる。 In this embodiment, as shown on the left side of FIG. 1B, an InAs two-dimensional layer having a thickness of at least 2 nm or more is formed as a buffer layer on a cleaned Si (111) substrate by molecular beam epitaxy. To do. If the InAs two-dimensional layer is less than 2 nm, the surface may be roughened or defects may increase at the initial stage of GaSb growth. The upper limit of the thickness of the InAs two-dimensional layer is preferably about 9 nm because when the thickness of the InAs layer exceeds 10 nm, carriers in GaSb flow out into the InAs layer and GaSb does not function as a p-channel layer. Formation of an InAs two-dimensional film can be generally performed using an apparatus including an ultrahigh vacuum chamber for forming a thin film by a molecular beam epitaxy method. This apparatus can perform reflection high-energy electron diffraction (RHEED) and scanning tunneling microscope (STM) observations. In the present invention, the InAs layer grows two-dimensionally and plays a very important role as a buffer layer in order to form GaSb excellent in surface flatness and crystal structure integrity. In the InAs layer, first, a single layer of In is deposited, and then In and As are supplied simultaneously to form an InAs layer having a desired thickness. As film formation conditions, it is preferable that the substrate temperature is 250 to 500 ° C. and the group V / III flux ratio is about 10 to 100. When an InAs two-dimensional layer is formed on a Si (111) substrate as a buffer layer, dislocations are localized only at the interface between the two, and there is no defect in the InAs two-dimensional layer.
次に、図１（ｃ）の左側に示すように、ＩｎＡｓ二次元層の上に、分子線エピタキシー法により、ＧａＳｂ二次元層を形成する。このＧａＳｂ二次元層は、ＧａＳｂの格子定数が６．０９５Åであり、ＩｎＡｓの格子定数が６．０５８Åであることから、両者の格子定数が非常に近いため、欠陥がないあるいは非常に少ない膜となる。次いで、成膜を続け、図１（ｄ）の左側に示すように、所望膜厚のＧａＳｂ薄膜を形成する。この膜形成も上記装置を用いて行う。ＧａＳｂ膜の形成は、Ｇａを先に供給し、後でＳｂを供給してもよいし、Ｓｂを先に供給し、後でＧａを供給してもよいし、ＧａとＳｂを同時に供給してもよい。本方法で形成したＧａＳｂ膜の面方位は（１１１）Ａ（Ｇａ終端）となる。膜厚については特に制限はなく、目的に応じた膜厚まで成長させることができる。膜形成条件としては、基板温度が２５０〜５００℃、Ｖ族／III族フラックス比１０〜１００程度であることが好ましい。形成されたＧａＳｂ膜は欠陥密度が８×１０５ｃｍ−２以下で表面のニ乗平均粗さが０．２〜０．３ｎｍの平坦性の優れた膜となる。 Next, as shown on the left side of FIG. 1C, a GaSb two-dimensional layer is formed on the InAs two-dimensional layer by molecular beam epitaxy. Since this GaSb two-dimensional layer has a lattice constant of GaSb of 6.095 、 and a lattice constant of InAs of 6.058 、, both lattice constants are very close, so there is no defect or very few films. Become. Next, film formation is continued, and a GaSb thin film having a desired film thickness is formed as shown on the left side of FIG. This film formation is also performed using the above apparatus. The GaSb film can be formed by supplying Ga first, then supplying Sb later, supplying Sb first, supplying Ga later, or supplying Ga and Sb simultaneously. Also good. The surface orientation of the GaSb film formed by this method is (111) A (Ga termination). There is no restriction | limiting in particular about a film thickness, It can be made to grow to the film thickness according to the objective. As film formation conditions, it is preferable that the substrate temperature is 250 to 500 ° C. and the group V / III flux ratio is about 10 to 100. The formed GaSb film is an excellent flat film having a defect density of 8 × 10 5 cm −2 or less and a surface mean square roughness of 0.2 to 0.3 nm.
図２、図３に、それぞれ作成例のＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造の倍率が２０００００倍、５０００００倍の高分解能断面ＴＥＭ（透過型電子顕微鏡）像をそれぞれ示す。また、図４に、同構造のＩｎＡｓ／Ｓｉ（１１１）界面の倍率が２００００００倍の高分解能断面ＴＥＭ像を示す。 FIG. 2 and FIG. 3 show high-resolution cross-sectional TEM (transmission electron microscope) images with the magnification of the GaSb / InAs / Si (111) structure of the preparation example being 200,000 times and 500,000 times, respectively. FIG. 4 shows a high-resolution cross-sectional TEM image in which the magnification of the InAs / Si (111) interface having the same structure is 2000000 times.
一方、同様な方法でＩｎＡｓ膜を設けない場合には、図１（ｃ）の右側に示すように、ＧａＳｂは三次元状（島状）となり、転位、双晶などが発生する。また、ＧａＳｂ成長後の状態は図１（ｄ）の右側に示すようになる。 On the other hand, when the InAs film is not provided by the same method, as shown on the right side of FIG. 1C, GaSb has a three-dimensional shape (island shape), and dislocations, twins, and the like are generated. The state after the growth of GaSb is as shown on the right side of FIG.
また、Ｓｉ（１１１）基板上に直接ＧａＳｂを成長させた場合も、同様に三次元状（島状）となる。 Similarly, when GaSb is grown directly on the Si (111) substrate, it also has a three-dimensional shape (island shape).
本発明のＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造は、その優れた表面の平坦性および結晶構造の完全性により、ＭＯＳデバイスや赤外線検出デバイスに好ましく適用され、優れた性能を発揮することができる。 The GaSb / InAs / Si (111) structure of the present invention is preferably applied to MOS devices and infrared detection devices due to its excellent surface flatness and crystal structure perfection, and can exhibit excellent performance.
例えば、非特許文献４においては、ＧａＳｂ基板上にＩｎＡｓ／ＧａＳｂ多重量子井戸構造の受光層を形成したフォトダイオードが提案されている。ＩｎＡｓ／ＧａＳｂ多重量子井戸構造は波長３μｍ以上の中赤外線検出器への応用が期待される。これまで、ＩｎＡｓ／ＧａＳｂ多重量子井戸構造の基板として用いるＧａＳｂやＩｎＡｓは赤外線の透過率が低いため、二次元センサアレイなどの裏面入射のセンサを作製するためには基板の除去が必要であった。また、Ｓｉは赤外域での透過率が高いため、Ｓｉ上にＩｎＡｓ／ＧａＳｂ超格子を作製できれば基板の除去が不要になる。通常の方法でＳｉ上にＧａＳｂやＩｎＡｓを成長させると、欠陥が大量に発生し、欠陥の少ない膜を得るためには厚くＧａＳｂを成長させなければならない。その場合、欠陥による吸収ロスだけでなく、ＧａＳｂ膜が厚いことによって透過率が低下する。 For example, Non-Patent Document 4 proposes a photodiode in which a light-receiving layer having an InAs / GaSb multiple quantum well structure is formed on a GaSb substrate. The InAs / GaSb multiple quantum well structure is expected to be applied to a mid-infrared detector having a wavelength of 3 μm or more. Until now, GaSb and InAs used as substrates of InAs / GaSb multiple quantum well structures have low infrared transmittance, so that it was necessary to remove the substrate in order to produce a back-illuminated sensor such as a two-dimensional sensor array. . Further, since Si has a high transmittance in the infrared region, if an InAs / GaSb superlattice can be formed on Si, the substrate need not be removed. When GaSb or InAs is grown on Si by a normal method, a large number of defects are generated, and in order to obtain a film with few defects, it is necessary to grow GaSb thickly. In that case, not only the absorption loss due to defects, but also the transmittance decreases due to the thick GaSb film.
これに対し、本発明の方法を用いて作製したＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造（図１（ｄ）の左側）上に多重量子井戸構造を作製した場合、最初に成長させるＩｎＡｓ層の膜厚を非常に薄くでき、膜中にも欠陥が存在しないので、吸収ロスの少ない赤外検出器の実現が期待できる。 On the other hand, when a multiple quantum well structure is formed on a GaSb / InAs / Si (111) structure (left side of FIG. 1 (d)) manufactured by using the method of the present invention, the InAs layer film grown first. Since the thickness can be made very thin and there are no defects in the film, an infrared detector with little absorption loss can be realized.
以下、本発明の実施例を説明する。 Examples of the present invention will be described below.
実施例１
縦２０ｍｍ横２０ｍｍ厚さ０．３ｍｍのＳｉ（１１１）基板をモリブデン製のホルダーに固定し、裏面からヒーターで加熱して、表面を清浄化した。次いで、チャンバー内で分子線エピタキシー法によりＳｉ（１１１）基板上にＩｎＡｓをバッファー層として３ｎｍほど二次元成長させた。基板温度は３８０℃、Ｉｎ／Ａｓのフラックス比５０、真空度５×１０−５Ｐａであった。このときの反射高速電子線回折（ＲＨＥＥＤ）パターンを図５（ａ）に示す。この図からＩｎＡｓ層が二次元成長していることがわかる。
Example 1
A Si (111) substrate having a length of 20 mm, a width of 20 mm, and a thickness of 0.3 mm was fixed to a molybdenum holder, and heated from the back with a heater to clean the surface. Next, two-dimensional growth was performed on the Si (111) substrate by 3 nm using InAs as a buffer layer in the chamber by molecular beam epitaxy. The substrate temperature was 380 ° C., the In / As flux ratio was 50, and the degree of vacuum was 5 × 10 −5 Pa. The reflection high-energy electron diffraction (RHEED) pattern at this time is shown in FIG. This figure shows that the InAs layer has grown two-dimensionally.
次に、分子線エピタキシー法によりＩｎＡｓ二次元層上にＧａＳｂを成長させた。基板温度は３８０℃、Ｇａ／Ｓｂのフラックス比２０、真空度５×１０−８Ｐａであった。ＧａＳｂ膜は層状成長し、三次元膜が形成された。膜厚が０．７ｎｍ、２ｎｍ、３０ｎｍ、１００ｎｍ、２００ｎｍの場合のＲＨＥＥＤパターンをそれぞれ図５（ｂ）、（ｃ）、（ｄ）、（ｅ）、（ｆ）に示す。これらの図から、形成されたＧａＳｂ膜の結晶構造は完全性に優れていることが確認された。また、最終的に成膜したＧａＳｂ膜の表面を走査トンネル顕微鏡により評価した像を図６、原子間力顕微鏡により評価（大気中に取り出してからの観察）を図７、フォトルミネッセンスの測定データを図８にそれぞれ示す。フォトルミネッセンスの測定は、測定温度８Ｋ、励起レーザー波長５３２ｎｍの条件で行った。どちらの場合もニ乗平均粗さは０．２〜０．３ｎｍ程度で非常に平坦性に優れていることが確認された。またフォトルミネッセンスのデータでは、波長１０６０ｎｍ付近にＳｉの発光ピークが、１５８０ｎｍ付近にＧａＳｂの発光ピークが見られる。 Next, GaSb was grown on the InAs two-dimensional layer by molecular beam epitaxy. The substrate temperature was 380 ° C., the Ga / Sb flux ratio was 20, and the degree of vacuum was 5 × 10 −8 Pa. The GaSb film was grown in layers to form a three-dimensional film. The RHEED patterns when the film thickness is 0.7 nm, 2 nm, 30 nm, 100 nm, and 200 nm are shown in FIGS. 5B, 5C, 5D, 5E, and 5F, respectively. From these figures, it was confirmed that the crystal structure of the formed GaSb film was excellent in completeness. Moreover, the image which evaluated the surface of the GaSb film | membrane finally formed with the scanning tunneling microscope in FIG. 6, evaluation (observation after taking out in air | atmosphere) with an atomic force microscope is FIG. 7, and measurement data of photoluminescence Each is shown in FIG. Photoluminescence was measured under the conditions of a measurement temperature of 8K and an excitation laser wavelength of 532 nm. In both cases, the mean square roughness was about 0.2 to 0.3 nm, and it was confirmed that the flatness was extremely excellent. In the photoluminescence data, a Si emission peak is observed near a wavelength of 1060 nm, and a GaSb emission peak is observed near 1580 nm.
比較例
実施例１において、ＩｎＡｓを形成しないこと以外は同様にしてＧａＳｂを蒸着させた。Ｓｉ（１１１）のＲＨＥＥＤパターンを図９（ａ）に、ＧａＳｂの厚さが０．１５ｎｍ、０．３ｎｍ、２．１ｎｍの場合のＲＨＥＥＤパターンをそれぞれ９（ｂ）、（ｃ）、（ｄ）に示す。これらの図から、Ｓｉ（１１１）上でのＧａＳｂは三次元（島状）成長していることがわかる。また双晶も形成されていることがわかる。
Comparative Example In Example 1, GaSb was deposited in the same manner except that InAs was not formed. The RHEED pattern of Si (111) is shown in FIG. 9A, and the RHEED patterns when the thickness of GaSb is 0.15 nm, 0.3 nm, and 2.1 nm are 9 (b), (c), and (d), respectively. Shown in From these figures, it can be seen that GaSb on Si (111) grows three-dimensionally (island-like). It can also be seen that twins are also formed.
実施例２
実施例１で得たＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造を用いてＭＯＳ型キャパシタを作製した。そのＭＯＳキャパシタの断面構造を図１０に模式的に示す。図中、１１はＳｉ（１１１）基板、１２はＩｎＡｓバッファー層、１３はＧａＳｂエピタキシャル層、１４はハフニウム酸化膜、１５は金属電極（Ａｕ）、１６は裏面コンタクト（Ａｌ）である。
Example 2
A MOS capacitor was fabricated using the GaSb / InAs / Si (111) structure obtained in Example 1. A cross-sectional structure of the MOS capacitor is schematically shown in FIG. In the figure, 11 is a Si (111) substrate, 12 is an InAs buffer layer, 13 is a GaSb epitaxial layer, 14 is a hafnium oxide film, 15 is a metal electrode (Au), and 16 is a back contact (Al).
ＭＯＳキャパシタ作製工程は、実施例１で得たＧａＳｂ／ＩｎＡｓ／Ｓｉ（１１１）構造のＧａＳｂエピタキシャル層１３の上に、２．７×１０-４ＰａのＯ２雰囲気の下でＨｆを電子ビーム蒸着して６ｎｍ厚のハフニウム酸化膜（ＨｆＯ２）１４を形成した。次に、ステンシルマスクを用い、Ａｕを抵抗加熱蒸着してハフニウム酸化膜１４上に金属電極（ゲート電極）１５を設けた。次に、Ａｌを抵抗加熱してＳｉ（１１１）基板１１の裏面に裏面コンタクト１６を設け、本実施例のＭＯＳキャパシタを作製した。 In the MOS capacitor fabrication process, Hf was electron beam deposited on the GaSb epitaxial layer 13 having the GaSb / InAs / Si (111) structure obtained in Example 1 under an O 2 atmosphere of 2.7 × 10 −4 Pa. Thus, a hafnium oxide film (HfO 2 ) 14 having a thickness of 6 nm was formed. Next, a metal electrode (gate electrode) 15 was provided on the hafnium oxide film 14 by resistance heating vapor deposition of Au using a stencil mask. Next, Al was resistance-heated to provide a back contact 16 on the back surface of the Si (111) substrate 11 to fabricate the MOS capacitor of this example.
本実施例で作製したＭＯＳキャパシタを用いて測定したＣ−Ｖ曲線のデータを図１１に示す。この図から、ｐ型のＧａＳｂ半導体層が形成できていることがわかる。 FIG. 11 shows CV curve data measured using the MOS capacitor manufactured in this example. From this figure, it can be seen that a p-type GaSb semiconductor layer has been formed.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195290A JP6153224B2 (en) | 2013-09-20 | 2013-09-20 | GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure perfectness, method for forming the same, and MOS device and infrared detection device using the structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013195290A JP6153224B2 (en) | 2013-09-20 | 2013-09-20 | GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure perfectness, method for forming the same, and MOS device and infrared detection device using the structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2015061025A true JP2015061025A (en) | 2015-03-30 |
| JP6153224B2 JP6153224B2 (en) | 2017-06-28 |
Family
ID=52818290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013195290A Expired - Fee Related JP6153224B2 (en) | 2013-09-20 | 2013-09-20 | GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure perfectness, method for forming the same, and MOS device and infrared detection device using the structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6153224B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112204756A (en) * | 2018-05-29 | 2021-01-08 | Iqe公司 | Optoelectronic devices formed over a buffer |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49126290A (en) * | 1973-01-05 | 1974-12-03 | ||
| JPH04252019A (en) * | 1991-01-28 | 1992-09-08 | Fujitsu Ltd | Growth method for hetroepitaxial crystal |
| JP2005085916A (en) * | 2003-09-08 | 2005-03-31 | National Institute Of Information & Communication Technology | Method of forming compound semiconductor thin film on si substrate |
| US20060017063A1 (en) * | 2004-03-10 | 2006-01-26 | Lester Luke F | Metamorphic buffer on small lattice constant substrates |
| JP2006253414A (en) * | 2005-03-10 | 2006-09-21 | National Institute Of Information & Communication Technology | Method for forming semiconductor thin film on si substrate and its structure |
| US20070164333A1 (en) * | 2004-07-01 | 2007-07-19 | Varian Medical Systems Technologies, Inc. | Integrated mis photosensitive device using continuous films |
| JP2008505496A (en) * | 2004-07-01 | 2008-02-21 | バリアン・メディカル・システムズ・テクノロジーズ・インコーポレイテッド | Integrated MIS photoelectric device using continuous film |
| JP2012009777A (en) * | 2010-06-28 | 2012-01-12 | Sumitomo Electric Ind Ltd | Semiconductor wafer and semiconductor device |
| JP2012129247A (en) * | 2010-12-13 | 2012-07-05 | Fujitsu Ltd | Infrared imaging apparatus |
| JP2014157994A (en) * | 2013-02-18 | 2014-08-28 | Asahi Kasei Corp | Compound semiconductor laminate and manufacturing method of the same |
| US20140339680A1 (en) * | 2013-05-17 | 2014-11-20 | Imec | III-V Device and Method for Manufacturing Thereof |
-
2013
- 2013-09-20 JP JP2013195290A patent/JP6153224B2/en not_active Expired - Fee Related
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS49126290A (en) * | 1973-01-05 | 1974-12-03 | ||
| JPH04252019A (en) * | 1991-01-28 | 1992-09-08 | Fujitsu Ltd | Growth method for hetroepitaxial crystal |
| JP2005085916A (en) * | 2003-09-08 | 2005-03-31 | National Institute Of Information & Communication Technology | Method of forming compound semiconductor thin film on si substrate |
| US20060017063A1 (en) * | 2004-03-10 | 2006-01-26 | Lester Luke F | Metamorphic buffer on small lattice constant substrates |
| JP2008505496A (en) * | 2004-07-01 | 2008-02-21 | バリアン・メディカル・システムズ・テクノロジーズ・インコーポレイテッド | Integrated MIS photoelectric device using continuous film |
| US20070164333A1 (en) * | 2004-07-01 | 2007-07-19 | Varian Medical Systems Technologies, Inc. | Integrated mis photosensitive device using continuous films |
| JP2006253414A (en) * | 2005-03-10 | 2006-09-21 | National Institute Of Information & Communication Technology | Method for forming semiconductor thin film on si substrate and its structure |
| JP2010521816A (en) * | 2007-03-16 | 2010-06-24 | バリアン・メディカル・システムズ・インコーポレイテッド | Integrated MIS photoelectric device using continuous film |
| JP2012009777A (en) * | 2010-06-28 | 2012-01-12 | Sumitomo Electric Ind Ltd | Semiconductor wafer and semiconductor device |
| JP2012129247A (en) * | 2010-12-13 | 2012-07-05 | Fujitsu Ltd | Infrared imaging apparatus |
| JP2014157994A (en) * | 2013-02-18 | 2014-08-28 | Asahi Kasei Corp | Compound semiconductor laminate and manufacturing method of the same |
| US20140339680A1 (en) * | 2013-05-17 | 2014-11-20 | Imec | III-V Device and Method for Manufacturing Thereof |
| JP2014229900A (en) * | 2013-05-17 | 2014-12-08 | アイメックＩｍｅｃ | Iii-v device and method for manufacturing the same |
Non-Patent Citations (5)
| Title |
|---|
| A.OHTAKE ET AL.: "Polarity controlled InAs{111} films grown on Si(111)", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 29, no. 3, JPN7017000191, May 2011 (2011-05-01), US, pages 031804 - 1, ISSN: 0003484573 * |
| CHEN WANG ET AL.: "GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric", ELECTROCHEMICAL AND SOLID-STATE LETTERS, vol. 15, no. 3, JPN7017000192, 2012, pages 51 - 54, ISSN: 0003484576 * |
| E.PAPIS-POLAKOWSKA ET AL.: "Study of interfaces chemistry in type-II GaSb/InAs superlattice structures", PHYSICS PROCEDIA, vol. 32, JPN6017001855, 2012, pages 184 - 190, ISSN: 0003484574 * |
| S.G.GHALAMESTANI ET AL.: "High quality InAs and GaSb thin layers grown on Si(111)", JOURNAL OF CRYSTAL GROWTH, vol. Vol.332, Issue 1, JPN6017001854, 1 October 2011 (2011-10-01), pages 12 - 16, ISSN: 0003484572 * |
| 後藤 高寛 他: "28a-G2-11 GaAs基板上GaSb MOS構造の作製 Fabrication of GaSb MOS Capacitor on GaAs Substrates", ＜第６０回＞応用物理学関係連合講演会講演予稿集, JPN6017001856, 11 March 2013 (2013-03-11), JP, pages 13 - 037, ISSN: 0003484575 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112204756A (en) * | 2018-05-29 | 2021-01-08 | Iqe公司 | Optoelectronic devices formed over a buffer |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6153224B2 (en) | 2017-06-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5180189B2 (en) | Method of zinc oxide film growth on epitaxial laterally abnormally grown gallium nitride templates | |
| TW200917337A (en) | Method for forming group-III nitride semiconductor on the semiconductor substrate | |
| WO2013047361A1 (en) | Method for producing substrate having buffer layer structure for growing nitride semiconductor layer | |
| Ryu et al. | Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth | |
| Iwawaki et al. | STM study of initial stage of Ge epitaxy on Si (001) | |
| JP6062887B2 (en) | Epitaxial solid-state semiconductor heterostructure and manufacturing method thereof | |
| JP6153224B2 (en) | GaSb / InAs / Si (111) structure excellent in surface flatness and crystal structure perfectness, method for forming the same, and MOS device and infrared detection device using the structure | |
| JP4041877B2 (en) | Semiconductor device | |
| Vézian et al. | Origins of GaN (0 0 0 1) surface reconstructions | |
| WO2017164036A1 (en) | Method for producing group iii nitride laminate | |
| Sammak et al. | Ge-on-Si: Single-crystal selective epitaxial growth in a CVD reactor | |
| TW201145581A (en) | Method for manufacturing epitaxial crystal substrate | |
| Hasegawa et al. | Dynamic observation of silicon homoepitaxial growth by high‐temperature scanning tunneling microscopy | |
| JP5772290B2 (en) | Manufacturing method of semiconductor device | |
| Orlov et al. | Microcrystalline Structure and Light-Emitting Properties of 3 C–SiC Island Films Grown on the Si (100) Surface | |
| JP6241939B2 (en) | Device manufacturing substrate, manufacturing method thereof, and near infrared light emitting device | |
| Elias et al. | Achievement of high density InAs/GaInAsP quantum dots on misoriented InP (001) substrates emitting at 1.55 µm | |
| Jernigan et al. | Analysis of growth on 75 mm Si (100) wafers by molecular beam epitaxy using in vacuo scanning tunneling microscopy | |
| Chang et al. | Selective-area growth of heavily n–doped GaAs nanostubs on Si (001) by molecular beam epitaxy | |
| CN111446313B (en) | Quantum well structure and growth method thereof | |
| WO2023037490A1 (en) | Nanowires and method for producing same | |
| JP7139960B2 (en) | semiconductor equipment | |
| JP6090767B2 (en) | Manufacturing method of semiconductor device | |
| JP2016174071A (en) | Method for crystal growth | |
| TWI677964B (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160614 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160614 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20170119 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170131 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170324 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170404 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170426 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170516 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170526 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6153224 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |