JP2015056526A - Heat sink and manufacturing method therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat sink in which a spreader of a solid member and a plurality of fins are bonded reliably with simple configuration.SOLUTION: A heat sink includes a spreader 10 of a solid member, a plurality of insertion grooves 11, 12 formed in the spreader 10, a plurality of fins 20 projecting from the spreader 10, and interatomic force junctions 21e, 22e performing interatomic force joining of the spreader 10 and each of the plurality of fins 20 in a state where one ends of the plurality of fins 20 subjected to ion beam sputtering, are inserted into the plurality of insertion grooves 11, 12 subjected to ion beam sputtering, correspondingly, and the abutting planes 21m, 22m at one ends of the plurality of fins 20 and the abutting bottom planes 11a, 12a of the plurality of insertion grooves 11, 12 are abutting each other.

Description

  The present invention relates to a heat sink and a method for manufacturing the same, and more particularly, to a heat sink for atomic force bonding a spreader and a plurality of fins and a method for manufacturing the same.

  In recent years, as the density of semiconductor devices increases, the amount of heat generated during operation increases and the temperature of the devices themselves tends to become higher.

  Such a semiconductor device is generally equipped with a heat sink that effectively dissipates heat generated during its operation. The heat sink is provided with a plurality of fins as its heat radiating portion. Further, in the heat sink, a plurality of fins are fixed to the spreader, and attempts have been made to simplify the fixed structure.

  Under such circumstances, Patent Document 1 relates to a method of manufacturing a heat sink, relates to a heat sink having a core portion 3 and a heat receiving portion 4, and places the core portion 3 on a pedestal portion disposed in the ultrasonic vibrator 11. 11, the pedestal portion is vibrated, and the core portion 3 on the pedestal portion is repeatedly moved relative to the heat receiving portion 4 to peel or break the aluminum oxide film 10 formed on the heat receiving portion 4 by friction. The structure which joins the core part 3 and the heat receiving part 4 is disclosed.

  Patent document 2 relates to an ultrasonic bonding apparatus for a heat sink, and discloses a configuration in which the fin 6 is bonded between a substrate 5a and a substrate 5b arranged so that bonding surfaces with the fin 6 face each other. . Specifically, in Patent Document 2, the fixing tools 37a and 38a are in contact with the lower surface of the bonding portion 6a of the fin 6 and press the bonding portion 6a against the substrate 5a. By applying ultrasonic vibration between the fixing member 37a and the substrate 5a, and the fixing tools 37b and 38b come into contact with the upper surface of the bonding portion 6b of the fin 6 so that the bonding portion 6b is attached to the substrate 5b. The structure which joins the junction part 6b and the board | substrate 5b by applying an ultrasonic vibration between the junction part 6a and the junction part 6b of the fin 6 in the pressed state is disclosed.

  According to the joining method in the heat sinks of Patent Literature 1 and Patent Literature 2, ultrasonic waves are applied without applying heat to the fins to join the joining object and the joining object, so that a brittle intermetallic compound is generated at the joining portion. Thus, good bonding strength can be obtained.

JP 2005-277192 A JP 2012-24771 A

  However, according to the study of the present inventor, in the configuration of Patent Document 1, the core portion 3 is placed on the pedestal portion disposed in the ultrasonic vibrator 11, and the pedestal portion is vibrated by the ultrasonic vibrator 11, and the pedestal is arranged. It is necessary to repeatedly move the core part 3 on the part relative to the heat receiving part 4, and the configuration is complicated.

Moreover, in the structure of patent document 2, in the state which fixed tool 37a, 38a contacted the lower surface of the junction part 6a of the fin 6, and pressed the junction part 6a against the board | substrate 5a, the junction part 6a and the junction part 6b of the fin 6 By applying ultrasonic vibration between the joint 6a and the substrate 5a, the fixing tools 37b and 38b come into contact with the upper surface of the joint 6b of the fin 6 and press the joint 6b against the substrate 5b. In this state, since the ultrasonic vibration is applied between the joint 6a and the joint 6b of the fin 6 to join the joint 6b and the substrate 5b, the configuration is complicated. In addition, it is necessary for the fin 6 to be provided with the flange-like joint portions 6a and 6b, which makes the processing of the fin 6 complicated and increases its cost and weight.

Here, according to the study of the present inventor, the fins and the spreaders are made of copper and the fins are made of copper and the spreaders are made of copper and the spreader is made of aluminum. When joining a plurality of fins by applying heat to the spreader, in the former case, a brittle intermetallic compound is not formed even if heat is applied because it is the same metal, but in the latter case, heat is applied. In addition, brittle intermetallic compounds (CuAl ₂ , Cu ₃ Al ₂ ) are generated at the joint, and it tends to be difficult to obtain good joint strength. Therefore, it is required to reliably join the plurality of fins to the spreader by a new joining method that can join the plurality of fins to the spreader without applying heat.

  That is, at present, there is a long-awaited realization of a heat sink in which a solid member spreader and a plurality of fins are reliably bonded with a simple configuration.

  The present invention has been made through the above-described studies, and an object of the present invention is to provide a heat sink in which a spreader of a solid member and a plurality of fins are reliably bonded with a simple configuration.

  In order to achieve the above object, the heat sink according to the first aspect of the present invention includes a spreader that is a solid member, a plurality of insertion grooves formed in the spreader, and a plurality of fins protruding from the spreader. One end portions of the plurality of fins subjected to the ion beam sputtering treatment are inserted in correspondence with the plurality of insertion grooves subjected to the ion beam sputtering treatment, and the abutting planes of the one end portions of the plurality of fins; And an atomic force bonding portion that bonds the spreader and the plurality of fins to each other by an atomic force bonding in a state where the contact bottom planes of the insertion grooves are in contact with each other.

  Moreover, in addition to this 1st aspect, this invention makes it the 2nd aspect that the ion beam used by the said ion beam sputtering process is obtained from the ion of an inert gas.

  In addition to the first or second aspect of the present invention, the spreader is made of copper, copper alloy, aluminum, or aluminum alloy, and the plurality of fins are copper, copper alloy, aluminum, or aluminum. The third aspect is to be made of an alloy.

  Moreover, this invention is a manufacturing method which manufactures the said heat sink in any one of the 1st to 3rd aspect in another situation, Comprising: One end part of these insertion grooves and these fins respectively After the ion beam sputtering process, one end portions of the plurality of fins are inserted corresponding to the plurality of insertion grooves, and the contact planes of the one end portions of the plurality of fins are in contact with the plurality of insertion grooves. This is a method of manufacturing a heat sink in which the spreader and each of the plurality of fins are atomically bonded to each other by an atomic force bonding portion by bringing the bottom plane into contact with each other.

According to the configuration of the first aspect of the present invention, a spreader that is a solid member, a plurality of insertion grooves formed in the spreader, a plurality of fins protruding from the spreader, and a plurality of ions subjected to ion beam sputtering treatment One end of the fin is inserted corresponding to the plurality of insertion grooves subjected to the ion beam sputtering process, and the contact plane of the one end of the plurality of fins corresponds to the contact bottom plane of the plurality of insertion grooves In the state where the spreader and the plurality of fins are in contact with each other, an atomic force bonding unit that bonds each of the spreader and the plurality of fins to each other by an atomic force bonding is provided. However, it is possible to realize a heat sink that is securely bonded.

  Also, according to the configuration of the second aspect of the present invention, the ion beam used in the ion beam sputtering process is obtained from ions of an inert gas, so that the ion beam is the target during the ion beam sputtering process. Unnecessary reaction with the spreader and the plurality of fins can be prevented.

  Further, according to the configuration in the third aspect of the present invention, the spreader is made of copper, copper alloy, aluminum, or aluminum alloy, and the plurality of fins are made of copper, copper alloy, aluminum, or aluminum alloy. Thus, it is possible to realize a heat sink with improved thermal conductivity and further improved heat dissipation characteristics. In particular, even when the spreader is made of aluminum and the plurality of fins are made of copper, it is possible to prevent the formation of an intermetallic compound in the ultrasonic bonding portion.

  In addition, according to the method of another aspect of the present invention, after one end of each of the plurality of insertion grooves and the plurality of fins is subjected to ion beam sputtering treatment, the one end of the plurality of fins corresponds to the plurality of insertion grooves. By inserting and abutting the abutting plane of one end of the plurality of fins and the abutting bottom plane of the plurality of insertion grooves in correspondence with each other, each of the spreader and the plurality of fins is connected to the atomic force bonding portion. With the atomic force bonding, it is possible to manufacture a heat sink in which a solid member spreader and a plurality of fins are reliably bonded with a simple configuration.

It is a perspective view of the heat sink in the embodiment of the present invention. It is an AA expanded sectional view of FIG. It is a schematic diagram which shows the manufacturing method of the heat sink in this embodiment which joins a spreader and a some fin by atomic force joining. Here, FIG. 3A is a schematic diagram of a step of ion beam sputtering of the contact surface of the spreader, and FIG. 3B is a schematic diagram of a step of ion beam sputtering of the contact surfaces of a plurality of fins. FIG. 3C is a schematic diagram of a process of atomic force bonding by attaching a plurality of fins having an abutting surface subjected to ion beam sputtering to a spreader having an abutting surface subjected to ion beam sputtering. is there. It is typical sectional drawing which shows the structure of the ion beam sputtering apparatus used when manufacturing the heat sink in this embodiment. Here, FIG. 4A shows an ion beam sputtering apparatus that performs ion beam sputtering on the contact surface of the first insertion groove of the spreader, and FIG. 4B shows the contact surface of the first fin element ( An ion beam sputtering apparatus for performing ion beam sputtering on a contact surface of a second fin element is shown. It is typical sectional drawing which shows the transition of the state of the contact surface of the spreader of the heat sink in this embodiment, and the contact surface of several fins. Here, FIG. 5A is a schematic diagram showing the contact surface of the spreader and the contact surfaces of a plurality of fins before ion beam sputtering, and FIG. 5B is a spreader in the middle of ion beam sputtering. FIG. 5C is a schematic diagram showing the contact surface of the spreader and the contact surfaces of the plurality of fins after ion beam sputtering. FIG. 5D is a schematic diagram showing a state in which the contact surfaces of the spreader and the contact surfaces of the plurality of fins are bonded by atomic force.

Hereinafter, a heat sink and a manufacturing method thereof according to an embodiment of the present invention will be described in detail with reference to the drawings as appropriate. In the figure, the x-axis, y-axis, and z-axis form a three-axis orthogonal coordinate system, and z
The positive direction of the axis is the upward direction, and the negative direction of the z-axis is the downward direction.

  With reference to FIG.1 and FIG.2, it demonstrates in detail about the structure of the heat sink in this embodiment.

  FIG. 1 is a perspective view of a heat sink in the present embodiment, and FIG. 2 is an AA enlarged sectional view of FIG.

  As shown in FIGS. 1 and 2, the heat sink 1 includes a metal spreader 10, typically a flat plate spreader 10 made of aluminum, and a metal fin 20, typically made of copper. And a plurality of mounted fins 20. The spreader 10 may be made of copper, and the plurality of fins 20 may be made of aluminum. Further, the aluminum and copper used for the spreader 10 and the fins 20 may be alloys thereof.

  The spreader 10 is typically a solid member, and is typically a rectangular recess extending inward from the upper surface, which is the positive-side surface of the z-axis, and extending in the y-axis direction. A semiconductor module (not shown) is provided on the lower surface, which is the surface on the negative direction side of the z-axis facing the fin 20, while the fin 20 is inserted into the first insertion groove 11 and the second insertion groove 12 to project upward. It is possible to attach a heat source such as

  The fin 20 is typically composed of a plurality of fins each having a rectangular flat plate shape and porous. In the drawing, as an example, two fins, that is, a first fin element having a rectangular flat plate shape and a porous shape are used. 21 and the second fin element 22 are shown. The first fin elements 21 and the second fin elements 22 are arranged in a row in the x-axis direction while juxtaposing main planes parallel to their yz planes. When the number of fin elements constituting the fin 20 is large, each fin element may be arranged in a plurality of rows. Such first fin element 21 and second fin element 22 can be obtained by a manufacturing method such as a general casting method.

  On the other hand, when the size of the first fin element 21 and the second fin element 22 is originally large and the heat dissipation surface area can be ensured to be large, they are not porous members and can be ensured with high strength. It may be a solid member.

  Here, the spreader 10 and the first fin element 21 and the second fin element 22 are joined to each other by atomic force joining portions 21e and 22e.

Specifically, the contact surface 11a which is the bottom plane of the first insertion groove 11 with respect to the first fin element 21 and the second fin element 22 in the spreader 10 and the bottom plane of the second insertion groove 12 are matched. Before joining the first fin element 21 and the second fin element 22, the contact surface 12 a is sputtered by an ion beam sputtering method in an ultrahigh vacuum environment with a vacuum degree of 10 ⁻⁶ torr or more. Further, the contact surfaces 21m and 22m that are the planar end portions of the first fin element 21 and the second fin element 22 and contact the contact surfaces 11a and 12a of the spreader 10 are joined to the spreader 10. Previously, sputtering is performed by an ion beam sputtering method in an ultrahigh vacuum environment with a vacuum degree of 10 ⁻⁶ torr or more. Accordingly, the contact surface 11a of the first insertion groove 11 and the contact surface 12a of the second insertion groove 12, and the contact surface 21m of the first fin element 21 and the contact surface of the second fin element 22 are obtained. At 22 m, films such as oxide films on those surfaces are removed and metal atom bonds appear. In such a state, the contact surface 11a of the insertion groove 11 and the contact surface 21m of the first fin element 21 are brought into contact with each other while maintaining an ultrahigh vacuum environment with a vacuum degree of 10 ⁻⁶ torr or more. As a result, the atomic force bonding portion 21e is formed, and the spreader 10 and the first fin element 21 are atomically bonded, and the contact surface 12a of the insertion groove 12 and the contact surface of the second fin element 22 By contacting 22m, an atomic force bonding portion 22e is formed, and the spreader 10 and the second fin element 22 are bonded by atomic force.

  In addition, since the side surface of the first fin element 21 and the side surface of the first insertion groove 11, and the side surface of the second fin element 22 and the side surface of the second insertion groove 12 are also ion beam sputtered, Correspondingly, an atomic force bonding is also possible.

  Next, a manufacturing method for manufacturing the heat sink 1 in the present embodiment having the above configuration will be described in detail with reference to FIGS. 3 and 4. In addition, since the joining method of each of the spreader 10 and each of the plurality of fins 20 is the same, the following description will be given mainly focusing on the joining method of the spreader 10 and the first fin element 21.

  FIG. 3 is a schematic diagram showing a method of manufacturing the heat sink 1 in the present embodiment in which the spreader 10 and the plurality of fins 20 are joined by atomic force joining. Here, FIG. 3A is a schematic diagram of a step of ion beam sputtering of the contact surface 11 a of the first insertion groove 11 of the spreader 10, and FIG. 3B is a diagram of the first fin element 21. FIG. 3C is a schematic diagram of a step of ion beam sputtering of the contact surface 21m (the contact surface 22m of the second fin element 22), and FIG. 3C is a first view having the contact surface 21m subjected to ion beam sputtering. The first insertion groove 11 and the second insertion groove of the spreader 10 having the contact surfaces 11a and 12a formed by ion beam sputtering of the fin element 21 and the second fin element 22 having the contact surface 22m subjected to ion beam sputtering. 12 is a schematic diagram of a process of attaching in accordance with 12 and performing atomic force bonding. FIG. 4 is a schematic cross-sectional view showing the configuration of the ion beam sputtering apparatus 50 used when manufacturing the heat sink in the present embodiment. 4A shows an ion beam sputtering apparatus 50 that performs ion beam sputtering on the contact surface 11a of the first insertion groove 11 of the spreader 10, and FIG. 4B shows the first fin element 21. FIG. The ion beam sputtering apparatus 50 which ion-beam-sputters the contact surface 21m (contact surface 22m of the 2nd fin element 22) is shown.

  In order to manufacture the heat sink 1, first, as shown in FIG. 3A, the contact surface 11 a that is a bottom plane parallel to the xy plane of the first insertion groove 11 formed in the spreader 10 is formed. Sputtering is performed by ion beam sputtering using an ion beam sputtering apparatus 50 shown in FIG.

  Specifically, the spreader 10 is made of an aluminum alloy (JIS standard A6062) and has a thickness of 4 mm, and the first insertion groove 11 formed by machining in the spreader 10 is in the x-axis direction. The width was set to 2 mm, the depth which is the length in the vertical direction was set to 2 mm, and the distance from the second insertion groove 12 adjacent in the x-axis direction was set to 2 mm.

Here, as shown in FIG. 4, the ion beam sputtering apparatus 50 typically includes a chamber 51, a vacuum pump 52 that brings the inside of the chamber 51 into an ultrahigh vacuum environment with a vacuum degree of 10 ⁻⁶ torr or more, Is an ion beam source 53 that generates and emits an ion beam B from ions of an inert gas, a holder 54 that holds a target that collides the ion beam B emitted from the ion beam source 53, and the holder 54 is rotatable. And a shaft portion 56 that is a rotation shaft of the holder 54 with respect to the support portion 55. As the vacuum pump 52, for example, an oil diffusion pump or a turbo molecular pump can be used. The reason why the ions of the ion beam are the ions of the inert gas is that there is substantially no reactivity with the spreader 10 or the plurality of fins 20 that are targets, and examples of the inert gas include argon gas or helium. Gas can be used.

  That is, using the ion beam sputtering apparatus 50 having such a configuration, the spreader 10 serving as a target is held by the holder 54 as shown in FIG.

  Next, with respect to the support portion 55 so that the ion beam B emitted from the ion beam source 53 collides with the contact surface 11a of the first insertion groove 11 of the spreader 10 held by the holder 54. The orientation of the holder 54 is adjusted by rotating the holder 54 about the shaft portion 56 as a rotation axis.

  Next, the ion beam B is emitted from the ion beam source 53, and the emitted ion beam B is applied to the first insertion groove 11 of the spreader 10 as shown in FIGS. 3 (a) and 4 (a). It collides with the contact surface 11a and ion beam sputtering it. The contact surface 11a subjected to ion beam sputtering in this manner is activated by removing a film such as an oxide film on the surface, and a metal atom bond covered by the film appears.

  On the other hand, using the ion beam sputtering apparatus 50, as shown in FIG. 3B, the contact surface 21m, which is a plane parallel to the xy plane at the tip of the first fin element 21, is ion beam sputtered. Sputter by the method.

  Specifically, the first fin element 21 is made of copper, has a thickness that is the length in the x-axis direction is 2 mm, a length in the y-axis direction is 60 mm, and a height that is the length in the vertical direction. Was set to 20 mm.

  That is, using the ion beam sputtering apparatus 50, the first fin element 21 serving as a target is held by the holder 54 as shown in FIG.

  Next, the shaft portion 56 against the support portion 55 so that the ion beam B emitted from the ion beam source 53 collides with the contact surface 21m of the first fin element 21 held by the holder 54. By rotating the holder 54 around the rotation axis, the orientation of the holder 54 is adjusted.

  Next, the ion beam B is emitted from the ion beam source 53, and the emitted ion beam B is in contact with the contact surface 21m of the first fin element 21 as shown in FIGS. 3 (b) and 4 (b). And ion beam sputtering it. The contact surface 21m subjected to ion beam sputtering in this way is removed from the surface such as an oxide film, and a metal atom bond covered by the film appears and is activated.

Finally, the first fin element 21 is inserted into the first insertion groove 11 of the spreader 10 from the abutment surface 21m side while maintaining an ultrahigh vacuum environment with a vacuum degree of 10 ⁻⁶ torr or more. Then, the contact surface 21 m of the first fin element 21 subjected to ion beam sputtering is brought into contact with the contact surface 11 a of the first insertion groove 11 of the spreader 10 subjected to ion beam sputtering. As a result, the abutting surface 11a and the abutting surface 21m are atomically bonded to each other while forming the atomic force bonding portion 21e. At this time, it is not necessary to apply a pressing force to the contact surface 11a and the contact surface 21m.

Further, after the ion beam sputtering is performed on the contact surface 12a of the second insertion groove 12 of the spreader 10 and the contact surface 22m of the second fin element 22, the contact surface 12a and the contact surface 22m are formed. Then, the atomic force bonding portion 22e is formed while the atomic force bonding is performed. At this time, it is not necessary to apply a pressing force to the contact surface 12a and the contact surface 22m.

  However, in the above configuration, an ion beam B deflecting device (not shown) is provided in the ion beam sputtering apparatus 50 so that the direction of the ion beam B emitted from the ion beam source 53 can be changed while switching. In this case, it is not necessary to attach / detach the spreader 10, the first fin element 21, and the second fin element 22 with respect to the chamber 51, and to adjust the direction of these in the chamber 51. That is, in such a case, these are all installed in the chamber 51, and the contact surface 11a of the first insertion groove 11 in the spreader 10 and the chamber 51 that maintains the ultrahigh vacuum environment are not opened. After ion beam sputtering of the contact surface 12 a of the second insertion groove 12, the contact surface 21 m of the first fin element 21, and the contact surface 22 m of the second fin element 22, The contact surface 21m and the contact surface 11a of the first insertion groove 11 of the spreader 10 subjected to ion beam sputtering are contacted, and the contact surface 22m of the second fin element 22 and the first surface of the spreader 10 are contacted. 2 and the abutting surface 12a of the insertion groove 12 are brought into contact with each other, and the atomic force bonding portions 21e and 22e are formed correspondingly to each other, and the atomic force bonding is performed. It is possible.

  Finally, the transition of the state of the contact surface of the spreader 10 and the contact surfaces of the plurality of fins 20 will be described in detail with reference to FIG. In addition, since the state of the contact surface of the spreader 10 and the state of the contact surface of the plurality of fins 20 are the same for all the fin elements, the spreader 10, the first fin element 21, the second fin element 22, As a representative, the following will be described.

  FIG. 5 is a schematic cross-sectional view showing the transition of the state of the contact surface of the spreader 10 and the contact surfaces of the plurality of fins 20 of the heat sink 1 in this embodiment. Here, FIG. 5A is a schematic diagram showing the contact surfaces 11a and 12a of the spreader 10 and the contact surfaces 21m and 22m of the plurality of fins 20 before ion beam sputtering, and FIG. FIG. 5C is a schematic diagram showing the contact surfaces 11a and 12a of the spreader 10 during ion beam sputtering and the contact surfaces 21m and 22m of the plurality of fins 20, and FIG. 5C is a diagram of the spreader 10 after ion beam sputtering. FIG. 5D is a schematic diagram showing the contact surfaces 11 a and 12 a and the contact surfaces 21 m and 22 m of the plurality of fins 20, and FIG. 5D shows the contact between the contact surfaces 11 a and 12 a of the spreader 10 and the plurality of fins 20. It is a schematic diagram which shows the state which the surfaces 21m and 22m joined by atomic force bonding.

  First, in the case shown in FIG. 5A, the metal atoms g1 and g2 are covered with the oxide film h on the surfaces of the contact surfaces 11a, 11b, 21m, and 22m before sputtering. Usually, the surface of a metal is oxidized by oxygen atoms firmly adhering, and even if the surface of such a metal is removed by pickling or cutting an oxide layer, pickling or oxidation is performed. Oxidizes immediately upon removal of the layer. Therefore, normally, metals having such a coating cannot be joined together.

  Next, as shown in FIG. 5 (b), on the surfaces of the contact surfaces 11a, 11b, 21m and 22m, the portions where the ion beam obtained from the inert gas collides during the ion beam sputtering. The oxide film h is removed and the metal atoms g1 and g2 are exposed to the outside.

  Next, as shown in FIG. 5C, on the respective surfaces of the contact surfaces 11a, 11b, 21m and 22m, after ion beam sputtering, the oxide film h is removed and the metal atoms g1 and g2 are exposed. At the same time, the bond between the metal atoms g1 and g2 and the metal oxide constituting the oxide film h is broken, and the bonds of the metal atoms g1 and g2 appear, and the respective surfaces of the contact surfaces 11a, 11b, 21m and 22m Is activated.

  Finally, as shown in FIG. 5 (d), the first fin element 21 is inserted into the first insertion groove 11 of the spreader 10 from the abutment surface 21m side, and is subjected to ion beam sputtering. The abutting surface 21m of the fin element 21 and the abutting surface 11a of the first insertion groove 11 of the spreader 10 subjected to ion beam sputtering are brought into contact with each other, and the second fin element 22 is brought into contact with the abutting surface. Inserted into the second insertion groove 12 of the spreader 10 from the 22m side, the contact surface 22m of the second fin element 22 subjected to ion beam sputtering, and the second insertion groove 12 of the spreader 10 subjected to ion beam sputtering. Are brought into contact with each other. At this time, the contact surfaces 11a, 11b, 21m, and 22m are such that the activated metal atoms g1 of the contact surfaces 11a and 11b and the activated metal atoms g2 of the contact surfaces 21m and 22m are mutually connected. Joining by bonding with interatomic force between. At this time, it is not necessary to apply a pressing force to the spreader 10 and the fin 20 in a direction in which the contact surfaces 11a and 11b contact the contact surfaces 21m and 22m.

  According to the configuration of the present embodiment, the spreader 10 that is a solid member, the plurality of insertion grooves 11 and 12 formed in the spreader 10, the plurality of fins 20 protruding from the spreader 10, and the ion beam sputtering. One end portions of the plurality of processed fins 20 are inserted in correspondence with the plurality of insertion grooves 11 and 12 subjected to the ion beam sputtering treatment, and a plurality of contact planes 21m and 22m of the one end portion of the plurality of fins are provided. In the state where the contact bottom planes 11a and 12a of the insertion grooves 11 and 12 are in contact with each other, the atomic force bonding portion 21e that bonds the spreader 10 and the plurality of fins 20 to each other by atomic force bonding. , 22e, the heat sink 1 in which the spreader 10 as the solid member and the plurality of fins 20 are reliably bonded can be realized with a simple configuration.

  In addition, according to the configuration of the present embodiment, the ion beam used in the ion beam sputtering process is obtained from ions of an inert gas, so that during the ion beam sputtering process, the ion beam is a target spreader 10 and a plurality of targets. Unnecessary reaction with the fin 20 can be prevented.

Further, according to the configuration of the present embodiment, the spreader 10 is made of copper, copper alloy, aluminum, or aluminum alloy, and the plurality of fins 20 are made of copper, copper alloy, aluminum, or aluminum alloy. Thus, it is possible to realize a heat sink with improved thermal conductivity and improved heat dissipation characteristics. In particular, even when the spreader 10 is made of aluminum and the plurality of fins 20 are made of copper, an intermetallic compound (CuAl ₂ , Cu ₃ Al ₂ ) is generated in the atomic force bonding portions 21e and 22e. Can be prevented.

  Further, according to the method of the present embodiment, after one end of each of the plurality of insertion grooves 11 and 12 and the plurality of fins 20 is subjected to the ion beam sputtering process, one end of each of the plurality of fins 20 is inserted into the plurality of insertion grooves 11, 12, the contact planes 21 m and 22 m at one end of the plurality of fins 20 and the contact bottom planes 11 a and 12 a of the plurality of insertion grooves 10 are in contact with each other so as to correspond to each other. 10 and a plurality of fins 20 are each joined by atomic force joining portions 21e and 22e, whereby a solid heat spreader 10 and a plurality of fins 20 are reliably joined with a simple configuration. 1 can be manufactured.

  The present invention is not limited to the above-described embodiments in terms of the shape, arrangement, number, etc. of the constituent elements, and departs from the gist of the invention, such as appropriately replacing the constituent elements with those having the same operational effects. Of course, it can be appropriately changed within the range not to be.

As described above, the present invention can provide a heat sink in which a solid member spreader and a plurality of fins are reliably bonded with a simple configuration. In addition, it is expected to be applicable to the field of heat sinks such as electronic devices.

DESCRIPTION OF SYMBOLS 1 ... Heat sink 10 ... Spreader 11 ... 1st insertion groove 11a ... Contact surface 12 ... 2nd insertion groove 12a ... Contact surface 20 ... Fin 21 ... 1st fin element 21m ... Contact surface 21e ... Atomic force Junction 22 ... second fin element 22m ... contact surface 22e ... atomic force junction 50 ... ion beam sputtering apparatus 51 ... chamber 52 ... vacuum pump 53 ... ion beam source 54 ... holder 55 ... support 56 ... shaft g1 ... Aluminum atom g2 ... Copper atom h ... Oxide film

Claims (4)

A spreader that is a solid member;
A plurality of insertion grooves formed in the spreader;
A plurality of fins protruding from the spreader;
One end portions of the plurality of fins subjected to the ion beam sputtering treatment are inserted in correspondence with the plurality of insertion grooves subjected to the ion beam sputtering treatment, and the abutting planes of the one end portions of the plurality of fins; An atomic force bonding portion for bonding the spreader and the plurality of fins to each other by an atomic force bonding in a state where the contact bottom planes of the insertion grooves are in contact with each other.
Heat sink with.   The heat sink according to claim 1, wherein an ion beam used in the ion beam sputtering process is obtained from ions of an inert gas.   The heat sink according to claim 1, wherein the spreader is made of copper, copper alloy, aluminum, or aluminum alloy, and the plurality of fins are made of copper, copper alloy, aluminum, or aluminum alloy.   4. The manufacturing method for manufacturing the heat sink according to claim 1, wherein after the plurality of insertion grooves and one end of the plurality of fins are each subjected to ion beam sputtering treatment, By inserting one end portion corresponding to the plurality of insertion grooves, and contacting the contact flat surface of the one end portion of the plurality of fins and the contact bottom plane of the plurality of insertion grooves corresponding to each other A method of manufacturing a heat sink, in which each of the spreader and the plurality of fins is atomically bonded by an atomic force bonding portion.

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