JP2015048377A - Semiconductor sealing resin composition and semiconductor device including cured product thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a resin composition capable of providing a cured product having less thermal decomposition (weight loss) even when placed in a high temperature of 200°C or more, for example, 200-250°C for a long period, excellent adhesion to a CuLF or an Ag plating film, good mechanical strength in a high temperature and excellent reliability.SOLUTION: The resin composition comprises: (A) a cyanate ester compound having two or more cyanate groups in one molecule; (B) a phenolic compound having two or more phenolic hydroxyl groups in one molecule; (C) an inorganic filler; (D) a compound represented by a general formula (3) (where, Rand Rare independent and 1-3C alkyl groups, and d is an integer of 0-2); (E) a material formed by supporting molybdic acid metal salt on an inorganic carrier; and (F) a hydrotalcite-like compound and/or the calcined product of the hydrotalcite-like compound. A molar ratio of a phenolic hydroxyl group in (B) the phenolic compound to a cyanate group in (A) the cyanate ester compound is 0.1-0.4.

Description

  The present invention relates to a semiconductor sealing resin composition. Specifically, a resin composition that provides a highly reliable semiconductor device that has excellent thermal stability at high temperatures for a long period of time and has little corrosion or migration of Cu lead frame (LF), Ag plating, or Cu wire. And a semiconductor device provided with a cured product of the composition.

  In recent years, semiconductor devices have undergone remarkable technological innovation. TSV (through silicon via) technology is used so that portable information such as smartphones and tablets and communication terminals can process large volumes of information at high speed. In this technique, first, semiconductor elements are connected in multiple layers and flip-chip connected to an 8 inch to 12 inch silicon interposer. Thereafter, the interposer on which a plurality of semiconductor elements connected in multiple layers are mounted is sealed with a thermosetting resin. After polishing unnecessary cured resin on the semiconductor element, it is separated into individual pieces, and a thin, small, multifunctional, and high-speed semiconductor device can be obtained. However, when a thermosetting resin is applied to the entire surface of a thin silicon interposer of 8 inches to 12 inches and sealed, a large warp occurs due to the difference in thermal expansion coefficient between silicon and the thermosetting resin. If the warpage is large, it cannot be applied to the subsequent polishing process or singulation process, which is a major technical problem.

  In recent years, as a measure against global warming, environmental measures on a global level such as energy conversion from fossil fuels have been promoted. Therefore, the number of hybrid cars and electric cars produced is increasing. In addition, household electrical appliances in emerging countries such as China and India are also increasingly equipped with inverter motors as energy saving measures.

  For hybrid vehicles, electric vehicles, and inverter motors, power semiconductors that play a role of converting AC to DC, converting DC to AC, and transforming voltage are important. However, silicon (Si), which has been used as a semiconductor for many years, is approaching its performance limit, and it has become difficult to expect dramatic performance improvements. Accordingly, attention has been focused on next-generation power semiconductors using materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond. For example, a reduction in resistance of a power MOSFET is required to reduce loss during power conversion. However, it is difficult to significantly reduce the resistance in the current mainstream Si-MOSFET. Therefore, development of a low-loss power MOSFET using SiC, which is a semiconductor with a wide band gap (wide gap), is in progress.

  SiC and GaN have excellent characteristics that the band gap is about 3 times that of Si and the breakdown electric field strength is 10 times or more. In addition, there are also features such as high-temperature operation (SiC reports 650 ° C operation), high thermal conductivity (SiC is equivalent to Cu), and large saturated electron drift velocity. As a result, if SiC or GaN is used, the on-resistance of the power semiconductor can be lowered and the power loss of the power conversion circuit can be greatly reduced.

  The power semiconductor is generally protected by transfer molding using an epoxy resin and potting sealing using a silicone gel. Recently, transfer molding using an epoxy resin is becoming mainstream from the viewpoint of miniaturization and weight reduction (particularly for automobiles). However, epoxy resin is a well-balanced thermosetting resin with excellent moldability, adhesion to the substrate, and mechanical strength, but at temperatures exceeding 200 ° C, the thermal decomposition of the cross-linking point proceeds, and SiC and GaN are transformed. There is anxiety that it may not serve as a sealing material in the expected high-temperature operating environment (Non-Patent Document 1).

  Therefore, a thermosetting resin composition containing a cyanate resin has been studied as a material having excellent heat resistance. For example, Patent Document 1 describes a curable resin composition containing a cyanate ester compound, an epoxy resin, and a curing catalyst, and describes that the cured product is excellent in curing shrinkage, heat resistance, and electrical characteristics. Patent Document 2 describes an electronic component sealing resin composition containing a cyanate ester compound, at least one selected from a phenol compound, a melamine compound, and an epoxy resin, and an inorganic filler. Patent Document 2 describes that the composition has a high glass transition temperature and can suppress warping of an electronic component device. Patent Document 3 describes a thermosetting resin composition containing a cyanate ester compound having a specific structure, a phenol compound, and an inorganic filler. Patent Document 3 describes that the resin composition has excellent heat resistance and high mechanical strength.

JP-A-8-283409 JP 2011-184650 A JP2013-53218A

Industrial Materials November 2011 Issue (vol59 No.11)

  However, the conventional cyanate ester-containing resin composition has insufficient heat resistance, and when it is placed at a high temperature of 200 ° C. or higher, for example, 200 ° C. to 250 ° C. for a long time, there is a problem that thermal decomposition occurs, CuLF or Ag plating. There is a problem in that the adhesiveness of the cured product with respect to the resin deteriorates to cause cracks. Therefore, in view of the above circumstances, the present invention has less thermal decomposition (weight reduction) even when placed at a high temperature of 200 ° C. or higher, for example, 200 ° C. to 250 ° C. for a long time, and has excellent adhesion to CuLF and Ag plating. Another object of the present invention is to provide a resin composition that gives a cured product having excellent mechanical strength at high temperatures and excellent reliability.

  As a result of intensive studies to solve the above problems, the inventors of the present invention formulated a phenol compound in a composition containing a cyanate ester compound and an inorganic filler, and specified a blending amount of the phenol compound with respect to the cyanate ester compound. It was found that the cured product obtained had an excellent thermal stability by being in the range. Furthermore, the present inventors have found that the adhesion between the metal substrate and the cured product can be greatly improved by blending the above composition with a mercaptopropyl group-containing alkoxysilane compound. However, the composition has a problem that when it is placed at a high temperature for a long time, the mercaptopropyl group-containing alkoxysilane compound is oxidized to generate sulfate ions, so that the metal substrate is corroded and discolored.

  Therefore, as a result of further intensive studies to solve the above problems, the present inventors have further blended the above-described composition with a hydrotalcite-like compound and a substance in which a metal molybdate is supported on an inorganic carrier. The present inventors have found that the corrosion of the metal substrate that occurs when placed at a high temperature for a long period of time can be suppressed, and that the excellent adhesion of the cured product to the metal substrate can be maintained.

（式（３）中、Ｒ^８及びＲ^９は互いに独立に、炭素数１〜３のアルキル基であり、ｄは０〜２の整数である）
（Ｅ）モリブデン酸金属塩を無機担体に担持してなる物質、及び
（Ｆ）ハイドロタルサイト様化合物及び／またはハイドロタルサイト様化合物の焼成物
を含み、（Ａ）シアネートエステル化合物中のシアナト基に対する（Ｂ）フェノール化合物中のフェノール性水酸基のモル比が０．１〜０．４である組成物である。 That is, the present invention
(A) Cyanate ester compound having two or more cyanato groups in one molecule (B) Phenol compound having two or more phenolic hydroxyl groups in one molecule (C) Inorganic filler (D) The following general formula (3 Compound represented by

(In Formula (3), R ⁸ and R ⁹ are each independently an alkyl group having 1 to 3 carbon atoms, and d is an integer of 0 to 2).
(E) a substance formed by supporting a metal molybdate on an inorganic carrier, and (F) a hydrotalcite-like compound and / or a calcined product of a hydrotalcite-like compound, and (A) a cyanate group in a cyanate ester compound (B) It is a composition whose molar ratio of the phenolic hydroxyl group in a phenol compound is 0.1-0.4.

  The composition of the present invention can suppress discoloration of the metal substrate when placed at a high temperature of 200 ° C. or higher, particularly 200 ° C. to 250 ° C. for a long time, and CuLF or Excellent adhesion between the Ag plating and the cured product can be maintained. Moreover, the obtained hardened | cured material has the outstanding mechanical strength under high temperature. Therefore, a semiconductor device sealed with a cured product of the composition of the present invention has long-term reliability at high temperatures.

  The present invention will be described in more detail below.

（式中、Ｒ^１及びＲ^２は、互いに独立に、水素原子または炭素数１〜４のアルキル基であり、Ｒ^３は、互いに独立に、下記のいずれかである。

Ｒ^４は水素原子またはメチル基であり、ｎは０〜１０の整数である。） (A) Cyanate ester compound The component (A) is a cyanate ester compound having two or more cyanato groups in one molecule. The cyanate ester compound in the present invention may be one having two or more cyanato groups in one molecule, and generally known ones can be used. The cyanate ester compound can be represented, for example, by the following general formula (1).

(In the formula, R ¹ and R ² are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R ³ is each independently one of the following:

R ⁴ is a hydrogen atom or a methyl group, and n is an integer of 0 to 10. )

  Examples of the cyanate ester compound of the present invention include bis (4-cyanatophenyl) methane, bis (3-methyl-4-cyanatophenyl) methane, bis (3-ethyl-4-cyanatophenyl) methane, and bis. (3,5-dimethyl-4-cyanatophenyl) methane, 1,1-bis (4-cyanatophenyl) ethane, 2,2-bis (4-cyanatophenyl) propane, 2,2-bis (4 -Cyanatophenyl) -1,1,1,3,3,3-hexafluoropropane, di (4-cyanatophenyl) thioether, 1,3- and 1,4-dicyanatobenzene, 2-tert-zotyl -1,4-dicyanatobenzene, 2,4-dimethyl-1,3-dicyanatobenzene, 2,5-di-tert-butyl-1,4-dicyanatobenzene, tetramethyl-1, -Dicyanatobenzene, 1,3,5-tricyanatobenzene, 2,2'- or 4,4'-dicyanatobiphenyl, 3,3 ', 5,5'-tetramethyl-4,4'-dicyanato Biphenyl, 1,3-, 1,4-, 1,5-, 1,6-, 1,8-, 2,6-, or 2,7-dicyanatonaphthalene, 1,3,6-tricyanatonaphthalene Bis (4-cyanatophenyl) methane; 2,2-bis (4-cyanatophenyl) propane, 1,1,1-1 tris (4-cyanatophenyl) ethane, bis (4-cyanatophenyl) Ether; 4,4 ′-(1,3-phenylenediisopropylpyridene) diphenyl cyanate, bis (4-cyanatophenyl) thioether, bis (4-cyanatophenyl) sulfone, tris (4-cyanato-phenyl) phosphine , Tris (4-cyanatophenyl) phosphate, phenol novolac cyanate, cresol novolac cyanate, dicyclopentadiene novolac cyanate, phenylaralkyl cyanate ester, biphenylaralkyl cyanate ester, naphthalene aralkyl cyanate ester, etc. . These cyanate ester compounds can be used alone or in combination.

  The cyanate ester compound can be obtained by reacting phenols and cyanogen chloride under basic conditions. The cyanate ester compound can be appropriately selected from those having a wide range of properties from a solid having a softening point of 106 ° C. to a liquid at room temperature, depending on the application. For example, when a liquid epoxy resin composition is produced, a liquid compound is used at room temperature, and when it is dissolved in a solvent to form a varnish, it is preferably selected according to solubility and solution viscosity. Moreover, when using it by transfer molding for power semiconductor sealing, it is preferable to select a solid compound at room temperature.

  Moreover, the thing with small equivalent of a cyanate group, ie, the thing with a small molecular weight between functional groups, has a small cure shrinkage, and can obtain the hardened | cured material of low thermal expansion and high Tg. Those having a large cyanate group equivalent have a slight decrease in Tg, but the triazine cross-linking interval becomes flexible, and low elasticity, high toughness, and low water absorption can be expected. The chlorine bonded or remaining in the cyanate ester compound is preferably 50 ppm or less, more preferably 20 ppm or less. When the amount of chlorine exceeds 50 ppm, chlorine or chlorine ions liberated by thermal decomposition when placed under high temperature for a long period of time corrode the oxidized Cu frame, Cu wire, and Ag plating, and peeling of the cured product or electrical It can cause defects. In addition, the insulating properties of the resin may be reduced.

上記式中、Ｒ^５及びＲ^６は、互いに独立に、水素原子または炭素数１〜４のアルキル基であり、ｍは０〜１０の整数である。
上記式中、Ｒ^７は、互いに独立に、下記のいずれかである。

（上記式中、Ｒ^４ は、互いに独立に、水素原子またはメチル基である） (B) The phenol compound (B) component is a phenol compound having two or more phenolic hydroxyl groups in one molecule, and generally known compounds are those having two or more phenolic hydroxyl groups in one molecule. Can be used. The phenol compound can be represented by the following general formula (2), for example.

In said formula, R < ⁵ > and R < ⁶ > are a hydrogen atom or a C1-C4 alkyl group mutually independently, and m is an integer of 0-10.
In the above formulae, R ⁷ is independently of each other below.

(In the above formula, R ^{4 s} independently of one another are a hydrogen atom or a methyl group)

Examples of the phenol compound represented by the above formula (2) include bisphenol F type resin, bisphenol A type resin, phenol novolac resin, phenol aralkyl type resin, biphenyl aralkyl type resin, and naphthalene aralkyl type resin. These may be used alone or in combination of two or more. In addition, the composition containing a compound (for example, phenol novolac resin) in which R ⁷ is CH ₂ in the above formula (2) may be inferior in heat resistance, or may be inferior in moldability due to too early reactivity with a cyanate compound. There is. Accordingly, it is particularly preferred that R ⁷ is other than CH ₂ .

  Conventionally, metal salts, metal complexes, and the like have been used as curing catalysts for cyanate ester compounds (Japanese Patent Laid-Open Nos. 64-43527, 11-106480, and 2005-506422). However, transition metals are used as metal salts and metal complexes, and transition metals are likely to promote oxidative degradation of organic resins at high temperatures. In the composition of the present invention, the phenol compound functions as a catalyst for the cyclization reaction of the cyanate ester compound. Therefore, it is not necessary to use metal salts and metal complexes. Thereby, long-term storage stability under high temperature can be further improved.

  In addition, a phenol compound having at least two hydroxyl groups in one molecule can be expected as a crosslinking agent that connects triazine rings. Unlike an epoxy compound or an amine compound, a phenol compound can form a structure represented by —C—O—Ar— by bonding with a cyanate ester compound. Since this structure is similar to the triazine ring structure formed when the cyanate ester compound is cured alone, it can be expected to further improve the heat resistance of the resulting cured product.

  A phenol compound having a small hydroxyl equivalent, for example, a phenol compound having a hydroxyl equivalent of 110 or less has high reactivity with a cyanate group. Therefore, the curing reaction proceeds when the composition is melt-kneaded at 120 ° C. or lower, and the fluidity may be significantly impaired, which is not preferable for transfer molding. Therefore, it is particularly preferable that the phenol compound has a hydroxyl equivalent of 111 or more.

  The compounding amount of the phenol compound is such that the hydroxyl group is 0.1 to 0.4 mol per 1 mol of cyanato group. When the amount of the phenol compound is less than the above lower limit, the reaction of the cyanate group becomes insufficient, and an unreacted cyanato group remains. The remaining cyanato group undergoes hydrolysis in a high humidity atmosphere. For this reason, when placed under high temperature and high humidity, it causes a decrease in mechanical strength and a decrease in adhesion to the substrate. Moreover, when there is more quantity of a phenol compound than the said upper limit, hardening reaction will advance from low temperature. Therefore, the fluidity of the composition is impaired, and the moldability is deteriorated. Further, the halogen element and alkali metal in the phenol compound are preferably 10 ppm, particularly 5 ppm or less when extracted at 120 ° C. under 2 atm.

(C) Inorganic filler In this invention, the kind in particular of an inorganic filler is not restrict | limited, A well-known thing can be used as an inorganic filler of the resin composition for semiconductor sealing. Examples thereof include silicas such as fused silica, crystalline silica, cristobalite, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber, magnesium oxide, and zinc oxide. The average particle size and shape of these inorganic fillers may be selected according to the application. Among them, in order to obtain a thermal expansion coefficient close to that of silicon, fused silica is preferable, and a spherical shape is preferable. The average particle size of the inorganic filler is preferably 0.1 to 40 μm, more preferably 0.5 to 15 μm. The average particle diameter can be obtained, for example, as a weight average value (or median diameter) by a laser light diffraction method or the like.

  The inorganic filler is preferably 10 ppm or less of chlorine ions and 10 ppm or less of sodium ions as impurities extracted under the extraction conditions of 5 g of sample and 50 g of water at 120 ° C. and 2.1 atm. If it exceeds 10 ppm, the moisture resistance of the semiconductor device encapsulated with the composition may deteriorate.

  In the present invention, the blending amount of the inorganic filler can be 60 to 94% by weight, preferably 70 to 92% by weight, more preferably 75 to 90% by weight of the entire composition.

  In order to increase the bond strength between the resin and the inorganic filler, the inorganic filler is preferably blended in advance with a surface treatment with a coupling agent such as a silane coupling agent or a titanate coupling agent. As such a coupling agent, epoxy silane such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, N -Β (aminoethyl) -γ-aminopropyltrimethoxysilane, reaction product of imidazole and γ-glycidoxypropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, etc. It is preferable to use a silane coupling agent such as aminosilane. Inorganic fillers surface-treated with mercaptosilane such as γ-mercaptosilane and γ-episulfoxyxypropyltrimethoxysilane can also be used, but are not so preferable in the present invention. Here, the blending amount of the coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

上記式（３）において、Ｒ^８及びＲ^９は、互いに独立に炭素数１〜３のアルキル基であり、ｄは０〜２の整数である。該メルカプトプロピル基含有アルコキシシラン化合物としては、例えば、３−メルカプトプロピルトリメトキシシラン、３−メルカプトプロピルトリエトキシシラン、３−メルカプトプロピルメチルジメトキシシラン、及び３−メルカプトプロピルメチルジエトキシシランなどが挙げられる。 (D) The mercaptopropyl group-containing alkoxysilane compound (D) component is a compound represented by the following general formula (3).

In the above formula (3), R ⁸ and R ⁹ are each independently an alkyl group having 1 to 3 carbon atoms, and d is an integer of 0 to 2. Examples of the mercaptopropyl group-containing alkoxysilane compound include 3-mercaptopropyltrimethoxysilane, 3-mercaptopropyltriethoxysilane, 3-mercaptopropylmethyldimethoxysilane, and 3-mercaptopropylmethyldiethoxysilane. .

  The composition of the present invention contains a metal substrate such as a Cu alloy lead frame, Ag plating, Au plating, and NiPdAu plating and a cured product by containing the mercaptopropyl group-containing alkoxysilane compound represented by the above formula (3). Significantly improve the adhesion with. The blending amount of component (D) is 0.3 to 1.0 parts by weight, preferably 0.4 to 0.8 parts by weight, based on 100 parts by weight of the total of components (A) and (B). Is good. When the amount of the component (D) is less than the lower limit, the adhesion between the metal substrate and the cured product may be insufficient. Further, even if the amount of the component (D) exceeds the above upper limit, the adhesion is not further improved, which is not economically preferable.

(E) The metal molybdate support material (E) is a material formed by supporting a metal molybdate on an inorganic carrier. The component (E) has an effect of changing the pH of the composition from acidic to neutral, and has an effect of suppressing or capturing the release of Cu ions and Ag ions derived from the lead frame and plating. The present invention is characterized in that the component (E) is blended together with the component (F) described below. This suppresses the corrosion of the metal frame that occurs when the device encapsulated with the cured product of the composition of the present invention is placed at a high temperature for a long time, and provides excellent adhesion between the cured product and the metal frame at a high temperature. Sex can be maintained.

  As the inorganic carrier for supporting the metal molybdate, those mentioned as the inorganic filler (C) can be used. Examples thereof include silicas such as fused silica and crystalline silica, talc, zinc oxide, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, and glass fiber. The inorganic carrier may be the same as or different from the component (C). Particularly preferred are silica, talc and zinc oxide.

  As the metal molybdate, zinc molybdate, calcium molybdate, strontium molybdate, barium molybdate, or a mixture thereof can be used. Further, a metal oxide such as zinc, calcium, strontium, barium, etc. may be combined with the metal molybdate. Zinc molybdate is preferred. As a substance formed by supporting zinc molybdate on an inorganic carrier, for example, KEGGARD series manufactured by SHERWIN-WILLIAMS may be mentioned.

  The amount of the metal molybdate supported on the inorganic carrier is preferably 5 to 40% by mass, particularly 10 to 30% by mass, based on the total amount of the inorganic carrier. If the content of the metal molybdate is too small, a sufficient effect may not be obtained. If it is too large, the fluidity and curability during molding may be deteriorated.

  (E) The addition amount of a component is 3-30 weight part with respect to a total of 100 weight part of (A) and (B) component, Preferably it is 5-20 weight part. If the amount of the component (E) is less than the above lower limit, the effect cannot be sufficiently obtained. Moreover, when adding exceeding the said upper limit, a fluid fall may be caused.

(F) Hydrotalcite-like compound (F) is a hydrotalcite-like compound and / or a calcined product of a hydrotalcite-like compound. The hydrotalcite-like compound is a layered double hydroxide represented by the following composition formula, for example, and functions as an anion exchanger.

^{_{[M 2+ 1-x M 3+}} x (OH) 2] x + [(A n- x / n) · mH 2 O] x-

In the above formula, M ²⁺ is a divalent metal ion such as Mg ²⁺ , Ca ²⁺ , Zn ²⁺ , Co ²⁺ , Ni ²⁺ , Cu ²⁺ , Mn ²⁺ , and M ³⁺ is Al ³⁺ , Fe ³⁺ , Cr ^3+, etc. a trivalent metal ^{ion, a n-is _{OH -, Cl -, CO 3}} 2-, which is an n-valent anion such as _SO ^{4 2-.} x is a number greater than 0, in particular 0.10 to 0.50, more preferably 0.20 to 0.33, and m is 0 or a number greater than 0, in particular 0 to 10, 0-4. The fired product of the hydrotalcite-like compound is, for example, a complex oxide that can be represented by the general formula M ²⁺ _1-x M ³⁺ _x O _{1 + x / 2} (x is a positive number). In addition, a zinc-modified hydrotalcite compound such as Mg ₃ ZnAl ₂ (OH) ₁₂ CO ₃ .wH ₂ O, Mg ₃ ZnAl ₂ (OH) ₁₂ CO ₃ may be used as the component (F) of the present invention. Yes (w is a real number).

  The hydrotalcite-like compound and the fired product of the hydrotalcite-like compound have anion exchange ability. Therefore, sulfate ions generated by oxidation of the component (D) can be captured, and this has the effect of preventing sulfurization and corrosion of the Cu lead frame and Ag plating. Further, as described above, by using the component (F) together with the component (E), it is possible to effectively prevent problems such as corrosion and migration of Cu and Ag.

The component (F) of the present invention is preferably a hydrotalcite compound represented by the following general formula (4) and / or a fired product of the hydrotalcite compound.

Mg _a Al _b (OH) _c CO ₃ .nH ₂ O (4)

In the above formula (4), a, b, and c are numbers greater than 0 that satisfy 2a + 3b−c = 2, and n is a number that satisfies 0 ≦ n ≦ 4.

Examples of the hydrotalcite compound represented by the above formula (4) include Mg _4.5 Al ₂ (OH) ₁₃ CO ₃ .3.5H ₂ O, Mg _4.5 Al ₂ (OH) ₁₃ CO ₃ , Mg ₄ Al ₂ (OH) ₁₂ CO ₃ .3.5H ₂ O, Mg ₆ Al ₂ (OH) ₁₆ CO ₃ .4H ₂ O, Mg ₅ Al ₂ (OH) ₁₄ CO ₃ .4H ₂ O, Mg ₃ Al _{2 (OH) 10 CO 3 ·} 1.7H 2 O , and the like. Examples of commercially available products include “DHT-4A”, “DHT-6”, and “DHT-4A-2” (all manufactured by Kyowa Chemical Industry Co., Ltd.).

Component (F) is blended in an amount of 1 to 10 parts by weight, preferably 2 to 8 parts by weight, based on 100 parts by weight of component (A) and component (B). If the amount of component (F) is less than the above lower limit, the effect cannot be sufficiently obtained. Moreover, when the quantity of (F) component is added exceeding the said upper limit, sclerosis | hardenability and adhesiveness fall may be caused.

  The sealing resin composition of the present invention may further contain various additives such as a release agent, a flame retardant, an antioxidant, an adhesion promoter, a low stress agent, and a coupling agent other than the component (D) as necessary. Can be blended.

  A release agent in particular is not restrict | limited, A well-known thing can be used. For example, carnauba wax, rice wax, candelilla wax, polyethylene, polyethylene oxide, polypropylene, montanic acid, montanic acid and ester compounds of saturated alcohol, 2- (2-hydroxyethylamino) -ethanol, ethylene glycol, glycerin, etc. And montanic acid wax, stearic acid, stearic acid ester, stearic acid amide, ethylenebisstearic acid amide, and a copolymer of ethylene and vinyl acetate. These can be used individually by 1 type or in combination of 2 or more types.

  As coupling agents other than the component (D), epoxy such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, etc. Silane, N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, reaction product of imidazole and γ-glycidoxypropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltri Silane coupling agents such as aminosilane such as methoxysilane can be used singly or in combination of two or more.

  The flame retardant is not particularly limited, and a known flame retardant can be used. Examples include phosphazene compounds, silicone compounds, aluminum hydroxide, magnesium hydroxide, molybdenum oxide, and antimony trioxide.

  The method for producing the composition of the present invention is not particularly limited. For example, the above components (A) to (F) may be stirred or dissolved, mixed or dispersed simultaneously or separately, if necessary with heat treatment, and optionally mixed with other additives. It can be obtained by stirring and dispersing. Although the apparatus used for mixing etc. is not specifically limited, A raikai machine provided with stirring and a heating apparatus, 2 rolls, 3 rolls, a ball mill, a continuous extruder, a planetary mixer, a mass collider, etc. can be used. You may use combining these apparatuses suitably.

  The composition of the present invention is useful for semiconductor packages such as transistor type, module type, DIP type, SO type, flat pack type, and ball grid array type. Molding of the composition of the present invention may be performed in accordance with a molding method conventionally employed. For example, transfer molding, compression molding, injection molding, casting method and the like can be used. Particularly preferred is transfer molding. The molding temperature of the composition of the present invention is preferably 160 to 190 ° C. for 45 to 180 seconds, and the post cure is 170 to 250 ° C. for 2 to 16 hours.

  The composition of the present invention has little thermal decomposition (weight reduction) when stored at a high temperature of 200 ° C. or lower, particularly 200 ° C. to 250 ° C. for a long time. In addition, excellent adhesion with CuLF and Ag plating can be maintained even when placed at a high temperature for a long period of time, and corrosion of the metal frame can be effectively suppressed. Therefore, a semiconductor device sealed with a cured product of the composition of the present invention can have high temperature and long-term reliability. Moreover, it can be used for the apparatus similar to the epoxy resin composition generally used conventionally as a transfer molding material, and the same molding conditions can be used. Furthermore, it is excellent in productivity.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated in detail, this invention is not restrict | limited to the following Example. In addition, all the parts in each example are parts by weight.

[Examples and Comparative Examples]
Each component shown below was blended with the composition shown in Table 1, mixed uniformly with a high-speed mixer, then uniformly kneaded with two heated rolls, cooled and pulverized to obtain a resin composition.

（ｎ＝０〜１０の混合物） (A) Cyanate ester compound (I) Cyanate ester compound represented by the following formula (5) (Primaset PT-60, Lonza Japan Co., Ltd., cyanate group equivalent 119)

(Mixture of n = 0 to 10)

（ｎ＝０〜１０の混合物） (B) Cyanate ester compound obtained in Synthesis Example 1 below
[Synthesis Example 1]
100 g of the phenol compound MEH-7785SS (manufactured by Meiwa Kasei) was dissolved in 600 g of butyl acetate. The solution was cooled to about −15 ° C. and 32 g of gaseous cyanogen chloride was introduced. Then, over a period of about 30 minutes, 50 g of triethylamine was added dropwise with stirring while maintaining the temperature below -10 ° C. After maintaining this temperature for an additional 30 minutes, cooling was stopped and the reaction mixture was filtered. The filtrate was continuously passed through an ion exchanger packed column. Subsequently, the solvent is removed under reduced pressure at a bath temperature of 70 ° C., after which volatile impurities (including solvent residues, free triethylamine, diethyl cyanamide) are removed using a falling film evaporator at 1 mbar, 130 ° C. Removed. The obtained product was a cyanate ester compound (cyanate group equivalent 208) represented by the following formula (6).

(Mixture of n = 0 to 10)

（ｎ＝０〜１０の混合物）
（ニ）下記式（８）で示すフェノール化合物（ＭＥＨ−７８５１ＳＳ、明和化成製、フェノール性水酸基当量２０３）

（ｎ＝０〜１０の混合物）
（ホ）下記式（９）で示すフェノール化合物（ＴＤ−２１３１、ＤＩＣ製、フェノール性水酸基当量１１０）

（ｎ＝０〜１０の混合物） (B) Phenol compound (C) Phenol compound represented by the following formula (7) (MEH-7800SS, manufactured by Meiwa Kasei Co., Ltd., phenolic hydroxyl group equivalent 175)

(Mixture of n = 0 to 10)
(D) Phenol compound represented by the following formula (8) (MEH-7851SS, manufactured by Meiwa Kasei, phenolic hydroxyl group equivalent 203)

(Mixture of n = 0 to 10)
(E) Phenol compound represented by the following formula (9) (TD-2131, manufactured by DIC, phenolic hydroxyl group equivalent 110)

(Mixture of n = 0 to 10)

(C) Inorganic filler (f) Fused spherical silica with an average particle size of 15 μm (manufactured by Tatsumori)

(D) Mercaptopropyl group-containing alkoxysilane compound
(G) _{3-mercaptopropyltrimethoxysilane: (CH 3 O) 3 -Si} -C 3 H 6 -SH

(E) component (h) Zinc molybdate-supported zinc oxide (KEMGARD-911B, manufactured by Sherwin Williams)
(Li) Zinc molybdate-carrying talc (KEMGARD-911C, manufactured by Sherwin Williams)

(F) the hydrotalcite-like compound _{(j) Mg 6 Al 2 (CO 3} ) (OH) 16 · 4H 2 O in baked products (DHT-4A-2, manufactured by Kyowa Chemical)

(G) Other components Triphenylalkane type epoxy resin (EPPN-501H, Nippon Kayaku, epoxy equivalent 165)
・ Carnauba wax (TOWAX-131, manufactured by Toa Kasei)
・ Imidazole (manufactured by Shikoku Chemicals)

  The following evaluation tests were performed for each composition. The results are shown in Table 1 below.

[Check corrosion of CuLF]
A 100-pin QFP lead frame (die pad part) made of Cu alloy (Olin C7025) was transfer molded at 175 ° C. for 120 seconds under a molding pressure of 6.9 MPa, and then post-cured at 180 ° C. for 4 hours. The tie bar was cut with a lead frame cutter to obtain a QFP package of 20 mm × 14 mm × 2.7 mm.
This package was stored in an oven at 225 ° C. for 1000 hours. After storage, the sealing resin was mechanically broken, and the presence or absence of discoloration in the internal die pad portion was observed.

[Confirmation of corrosion of Ag plating]
Using a 100-pin QFP lead frame made of Cu alloy (Olin C7025) with a die pad portion (8 mm × 8 mm) and a wire bonding portion plated with Ag, transfer molding is performed at 175 ° C. for 120 seconds under a molding pressure of 6.9 MPa, then 180 ° C., 4 Time post cure. The tie bar was cut with a lead frame cutter to obtain a QFP package of 20 mm × 14 mm × 2.7 mm.
This package was stored in an oven at 225 ° C. for 1000 hours. After storage, the sealing resin was mechanically destroyed, and the presence or absence of discoloration in the Ag plating die pad portion was observed.

[Adhesion confirmation with Ag-plated CuLF]
Using a 100-pin QFP lead frame made of a Cu alloy (Olin C7025) with an Ag-plated die pad part (8 mm x 8 mm) and wire bonding part, transfer molding was performed at 175 ° C x 120 seconds under a molding pressure of 6.9 MPa, and then 180 ° C, 4 Time post cure. The tie bar was cut with a lead frame cutter to obtain a QFP package of 20 mm × 14 mm × 2.7 mm.
Twelve of these packages were stored in a 225 ° C. oven for 1000 hours. After storage, an ultrasonic flaw detector was used to observe the presence of internal cracks and separation from the lead frame. The number of packages with cracks or delamination is listed in the table.

[Bending strength, flexural modulus]
According to JIS-K6911, transfer molding was performed under the conditions of 175 ° C. × 120 seconds and a molding pressure of 6.9 MPa, and then post-curing at 180 ° C. for 4 hours to obtain a 10 × 100 × 4 mm test piece.
The test piece was allowed to stand in a 250 ° C. oven for 3 minutes and then bent at three points by an autograph tester (manufactured by Shimadzu Corporation) to measure the bending strength and the flexural modulus.

  A composition that does not contain either a metal molybdate supporting salt or a hydrogen citrate-like compound cannot suppress discoloration of the metal frame when it is placed at a high temperature for a long period of time. Separation occurs at the interface with the object. On the other hand, in the test body sealed with the composition of the present invention, the metal frame did not change color and did not peel or crack even after 1000 hours at 225 ° C. Further, the obtained cured product was excellent in mechanical strength at high temperature.

  The composition of the present invention has good moldability, and the cured product has high mechanical strength at high temperatures. Furthermore, the cured product of the composition of the present invention can effectively suppress discoloration of the metal frame when placed at a high temperature for a long period of time, and maintains excellent adhesion to the metal frame at a high temperature. be able to. Therefore, the composition of the present invention can provide a semiconductor device having excellent high-temperature and long-term reliability.

Claims (8)

(A) Cyanate ester compound having two or more cyanato groups in one molecule (B) Phenol compound having two or more phenolic hydroxyl groups in one molecule (C) Inorganic filler (D) The following general formula (3 Compound represented by

(In Formula (3), R ⁸ and R ⁹ are each independently an alkyl group having 1 to 3 carbon atoms, and d is an integer of 0 to 2).
(E) a material obtained by supporting a metal molybdate on an inorganic carrier, and (F) a hydrotalcite-like compound and / or a fired product of a hydrotalcite-like compound, and (A) a cyanate group in a cyanate ester compound (B) The composition whose molar ratio of the phenolic hydroxyl group in a phenolic compound is 0.1-0.4. The composition according to claim 1, wherein the component (E) is a material in which a metal molybdate is supported on an inorganic carrier selected from silica, talc, and zinc oxide. The composition according to claim 1 or 2, wherein the metal molybdate is zinc molybdate. (F) component is the following general formula (4)

Mg _a Al _b (OH) _c CO ₃ .nH ₂ O (4)

(In Formula (4), a, b, and c are numbers greater than 0 that satisfy 2a + 3b−c = 2, and n is a number that satisfies 0 ≦ n ≦ 4)
The composition of any one of Claims 1-3 which is a compound represented by these, and / or the baked product of this compound. (A) The composition of any one of Claims 1-4 whose component is a compound represented by following General formula (1).

(In Formula (1), R < ¹ > and R < ² > are a hydrogen atom or a C1-C4 alkyl group mutually independently, and R < ³ > is either of the following independently of each other.

R ⁴ are each independently a hydrogen atom or a methyl radical, n is an integer of 0). (B) The composition of any one of Claims 1-5 whose component is a compound represented by following General formula (2).

(In the formula (2), R ⁵ and R ⁶ are each independently a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and R ⁷ is each independently one of the following:

R < ⁴ > is a hydrogen atom or a methyl group mutually independently, and m is an integer of 0-10.   The semiconductor device provided with the hardened | cured material of the composition of any one of Claims 1-6.   The semiconductor device according to claim 7, wherein a semiconductor element made of SiC or GaN is mounted.