JP2015037134A - Silicon carbide removal device and silicon carbide removal method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a silicon carbide removal device and a silicon carbide removal method, which can detect a correct ending point of a cleaning treatment of removing silicon carbide from whole components which compose a silicon carbide deposition device.SOLUTION: A silicon carbide removal device comprises: a stage 13 which is arranged in a processing chamber 11 and to which a component 20 of a silicon carbide deposition device, where silicon carbide 21 is deposited on a surface is fixed and which rotates; a fluorine-containing gas supply part 25 for supplying a fluorine-containing gas; an oxygen-containing gas supply part 26 for supplying an oxygen-containing gas; a plasma generation part 35 for supplying the plasma gasified fluorine-containing gas and a plasma gasified oxygen-containing gas to inside the processing chamber 11; a surface roughness measuring instrument 41 for measuring surface roughness of the component 20 of the silicon carbide deposition device; and a control part 43 for detecting an ending point of a cleaning treatment of the silicon carbide 21 based on surface roughness data serially acquired by the surface roughness measuring instrument 41.

Description

  The present invention relates to a silicon carbide removing apparatus and a silicon carbide removing method for removing silicon carbide deposited on a member of a silicon carbide film forming apparatus.

  Silicon carbide composed of silicon and carbon is used in various fields as an important ceramic material. In particular, it is expected to be used as a basic material for electronic parts for automobiles, for example, because it has characteristics as a semiconductor, can be manufactured with low power consumption, and operates at a high temperature.

In the silicon carbide film forming apparatus used when forming silicon carbide, silicon carbide is also formed on the inner wall of a processing chamber (reaction vessel) which is one of the members of the silicon carbide film forming apparatus after silicon carbide is formed. As a result, there was a risk that the deposit would become a source of particles.
Conventionally, a method of removing silicon carbide (deposited layer) deposited on the inner wall of a processing chamber by periodic gas cleaning has been proposed (see, for example, Patent Documents 1 to 6).

  Patent Document 1 discloses a silicon carbide removal method in which silicon carbide adhering to the inner wall of a reaction vessel of a chemical reaction apparatus is removed with chlorine trifluoride gas.

  Patent Document 2 discloses a film forming step of supplying a raw material gas as a film forming raw material to a processing container and performing induction film formation on the target substrate by induction heating the target substrate with a coil. There is disclosed a substrate processing method including a cleaning step of supplying a cleaning gas into a processing container and cleaning the inside of the processing container by exciting the cleaning gas with plasma.

  In Patent Document 3, in a CVD apparatus that supplies a reaction gas into a reaction chamber and forms a deposited film on the surface of a base material disposed in the reaction chamber, a film forming process of the substrate is performed by the CVD apparatus. Fluorine-based cleaning gas containing fluorine-containing compounds is converted into plasma by a remote plasma generator, and the plasmaized cleaning gas is introduced into the reaction chamber to remove by-products adhering to the reaction chamber. A characteristic CVD method cleaning method is disclosed.

  Patent Document 4 discloses a method for cleaning a deposition chamber, in which a precursor gas is introduced into a remote chamber outside the deposition chamber so that a differential pressure is generated between the remote chamber outside the deposition chamber and the deposition chamber. A supply step, a precursor activation step in which a precursor gas is activated in the remote chamber using an output of 3000-12000 watts to form reactive species, and the reactive species is moved from the remote chamber into the deposition chamber. A chamber cleaning method is disclosed, wherein the precursor activation step uses a remote activation source.

  Patent Document 5 discloses an end point detection method for detecting the end point of cleaning by measuring the radical emission intensity in the process vessel when cleaning the CVD process vessel, and the radical emission intensity D 1 that decreases as the cleaning progresses. A method for detecting the end point of cleaning is disclosed, wherein the end point is detected from a change with time of the ratio D / I of the increasing radical emission intensity I.

  Patent Document 6 discloses a method for determining an end point of a processing process by measuring a thickness of a deposited layer deposited on a surface in a preceding processing process, and measuring the deposited layer thickness on the same plane as the surface. Providing a sensor designed to, exposing the plasma processing chamber to the plasma to vary the deposition layer thickness, determining the deposition layer thickness as a function of time, and A method for determining an endpoint is disclosed, comprising: identifying a steady state condition of the deposited layer thickness characterized by a substantially stable measurement, the beginning of which represents the endpoint.

JP 2005-129724 A JP 2009-117399 A JP 2002-280376 A Japanese Patent No. 3693798 JP 2006-86325 A Special table 2008-536306 gazette

The methods disclosed in Patent Documents 1 and 2 do not use an end point detection system that detects that the deposits accumulated in the reaction vessel or the processing vessel have been removed.
For this reason, when a long-time cleaning process is performed in order to reliably remove the deposit, there is a problem that the reaction container and the processing container are damaged (broken) by the cleaning process.

By the way, when a silicon carbide film is formed by a silicon carbide film forming apparatus, the chamber and the members in the chamber are made of a high heat-resistant material such as silicon carbide or carbon in order to heat the chamber to about 1500 ° C. .
For this reason, when the cleaning process (deposit removal process) of the member to which the deposit made of silicon carbide is attached using the methods disclosed in Patent Documents 3 and 4, the deposit adheres among the member. There was a problem that the part which was not done was damaged.

The method disclosed in Patent Document 5 is an indirect method of detecting the end point from the emission intensity of radicals, and therefore, the deposit contacts the surface of the member and adheres firmly to the surface of the member. The end point is detected before the removal of the portion is completed.
That is, since the accuracy of the end point detection is poor, there is a problem that a thin deposit remains on the surface of the member.

Since the average surface roughness Ra of the deposit made of silicon carbide is about several tens of μm to several hundreds of μm, the thickness of the deposit varies greatly depending on the location.
For this reason, in the method disclosed in Patent Document 6, it is difficult to accurately measure the thickness of the deposit, and thus it is difficult to accurately detect the end point.

  In other words, the methods disclosed in Patent Documents 1 to 6 cannot detect the correct end point of the cleaning process in which silicon carbide is removed from the entire members constituting the silicon carbide film forming apparatus.

  Therefore, the present invention provides a silicon carbide removing apparatus and a silicon carbide removing method capable of detecting a correct end point of a cleaning process in which silicon carbide is removed from the entire members constituting the silicon carbide film forming apparatus. Objective.

  In order to solve the above-described problem, according to the first aspect of the present invention, the silicon carbide film forming apparatus in which silicon carbide as a deposit is deposited when a silicon carbide film is formed on a substrate using the silicon carbide film forming apparatus. A silicon carbide removing device that removes the silicon carbide from the surface of the member, a treatment chamber in which the removal treatment of the silicon carbide is performed, and the silicon carbide deposited on a surface disposed in the treatment chamber A member of the silicon carbide film forming apparatus is fixed, a rotating stage, a fluorine-containing gas supply unit that supplies a fluorine-containing gas, an oxygen-containing gas supply unit that supplies an oxygen-containing gas, and the fluorine-containing gas supply unit And the member of the silicon carbide film-forming apparatus that is connected to the oxygen-containing gas supply unit, converts the fluorine-containing gas and the oxygen-containing gas into plasma, and is disposed in the processing chamber. A plasma generator for supplying the plasma-containing fluorine-containing gas and the plasma-ized oxygen-containing gas, and a surface roughness measuring device for measuring the surface roughness of the silicon carbide film forming apparatus member on which the silicon carbide is deposited And an end point of the silicon carbide cleaning process based on the surface roughness data continuously acquired by the surface roughness measuring instrument, and when the end point is detected, the silicon carbide cleaning process is stopped. And a silicon carbide removing device including a control unit.

  Moreover, according to the invention which concerns on Claim 2, the said surface roughness measuring device is a non-contact-type laser displacement meter, The silicon carbide removal apparatus of Claim 1 characterized by the above-mentioned is provided.

  According to a third aspect of the present invention, the surface roughness measuring instrument is disposed above the processing chamber, and penetrates a portion of the processing chamber that faces the surface roughness measuring instrument. The silicon carbide removing apparatus according to claim 1, further comprising a light transmissive window member arranged in such a manner.

  The invention according to claim 4 further includes a heating unit that is provided in the stage and that heats the member of the silicon carbide film forming apparatus to a predetermined temperature. The silicon carbide removing device according to any one of 1 to 3 is provided.

  According to the fifth aspect of the present invention, the fluorine-containing gas that is connected to the upper portion of the processing chamber and the plasma generation unit and is converted into plasma in the processing chamber, and the oxygen-containing gas that is converted into plasma are contained in the processing chamber. A cleaning gas introduction pipe including an introduction port to be introduced, wherein the introduction port is provided to face the upper surface of the stage, and the position of the upper surface of the stage facing the introduction port; 5. The silicon carbide removing device according to claim 1, wherein a distance from the center is larger than half of a diameter of the stage.

  According to the invention of claim 6, when forming a silicon carbide film on a substrate using the silicon carbide film forming apparatus, the surface of the member of the silicon carbide film forming apparatus in which silicon carbide as a deposit is deposited is used. A silicon carbide removing method for removing the silicon carbide, comprising: fixing a member of the silicon carbide film forming apparatus on which the silicon carbide is deposited on a stage housed in a processing chamber; and rotating the stage Then, the fluorine-containing gas converted into plasma and the oxygen-containing gas converted into plasma are supplied into the processing chamber to start the removal of the silicon carbide, and the silicon carbide film on which the silicon carbide is deposited is deposited. A step of continuously measuring the surface roughness of a member of the apparatus, and a plasma-containing fluorine-containing gas when the value of the surface roughness continuously falls below a preset threshold value for a predetermined time; Silicon carbide removal method characterized by having the steps of stopping the removal of the silicon carbide is provided a supply of oxygen-containing gas is stopped.

  According to a seventh aspect of the present invention, as the threshold value, a surface roughness value of a member of a new silicon carbide film forming apparatus on which the silicon carbide is not deposited is used. A method for removing silicon carbide is provided.

  According to an eighth aspect of the present invention, there is provided the silicon carbide removing method according to the sixth aspect, wherein a value that is one fifth of the surface roughness of the silicon carbide is used as the threshold value. .

  Moreover, according to the invention which concerns on Claim 9, average surface roughness Ra is used as said surface roughness, The silicon carbide removal method of any one of Claims 6 thru | or 8 provided Is done.

  Moreover, according to the invention concerning Claim 10, the measurement of the surface roughness of the member of the said silicon carbide film-forming apparatus is performed non-contactingly, Any one of Claim 6 thru | or 9 characterized by the above-mentioned. A method for removing silicon carbide is provided.

  According to the invention of claim 11, when removing the silicon carbide, heating is performed so that the temperature of the member of the silicon carbide film forming apparatus fixed on the stage is 250 to 300 ° C. A silicon carbide removing method according to any one of claims 6 to 10 is provided.

  According to the invention of claim 12, the plasma is generated at a position facing the stage and located outside a region from the center of the stage to half of the diameter of the stage. The method for removing silicon carbide according to any one of claims 6 to 11, wherein a fluorine-containing gas and the plasma-ized oxygen-containing gas are supplied.

  According to the silicon carbide removing apparatus of the present invention, a fluorine-containing gas supply unit that supplies a fluorine-containing gas, an oxygen-containing gas supply unit that supplies an oxygen-containing gas, a fluorine-containing gas supply unit, and an oxygen-containing gas supply unit are connected. A plasma generating unit that converts the fluorine-containing gas and the oxygen-containing gas into plasma and supplies the plasma-converted fluorine-containing gas and the plasma-ized oxygen-containing gas to the members of the silicon carbide film forming apparatus disposed in the processing chamber. The silicon component contained in the silicon carbide that is the deposit is selectively removed by the plasma-containing fluorine-containing gas, and the carbon component contained in the silicon carbide is selectively removed by the plasma-containing oxygen-containing gas. Since it is selectively removed, silicon carbide deposited on the surface of the member of the silicon carbide film forming apparatus can be accurately removed. Thereby, it becomes possible to expose the entire surface of the member of the silicon carbide film forming apparatus.

  The member of the silicon carbide film forming apparatus, which is disposed in the processing chamber and has silicon carbide deposited on the surface thereof, is fixed, and the surface roughness of the rotating stage and the member of the silicon carbide film forming apparatus in which silicon carbide is deposited is fixed. A surface roughness measuring instrument that measures the surface of the member of the silicon carbide film forming apparatus during the cleaning of silicon carbide (when removing silicon carbide). It is possible to measure the surface roughness of a wide area rather than a part of a narrow area of the surface of silicon carbide attached to the member of the silicon film forming apparatus.

Then, based on the surface roughness data continuously acquired by the surface roughness measuring device, the end point of the silicon carbide cleaning process is detected, and when the end point of the cleaning process is detected, the silicon carbide cleaning process is stopped. By having the control unit, it becomes possible to detect the end point of the cleaning process of silicon carbide based on the surface roughness of a wide region of the surface of the member of the silicon carbide film forming apparatus.
Thereby, the time when the silicon carbide deposited on the surface of the member of the silicon carbide film forming apparatus is completely removed can be detected as the end point of the silicon carbide cleaning process.

It is a figure which shows typically schematic structure of the silicon carbide removal apparatus which concerns on embodiment of this invention. It is a figure which shows the flowchart for demonstrating the silicon carbide removal method which concerns on embodiment of this invention. It is a figure which shows the surface roughness of the silicon carbide immediately after the cleaning process start of an Example. It is a figure which shows the surface roughness of the surface of the sample near completion | finish of the cleaning process of an Example. It is a figure which shows typically schematic structure of the silicon carbide removal apparatus used when acquiring the data of a comparative example.

  Embodiments to which the present invention is applied will be described below in detail with reference to the drawings. The drawings used in the following description are for explaining the configuration of the embodiment of the present invention, and the size, thickness, dimensions, etc. of each part shown in the figure are the dimensional relations of an actual silicon carbide removing apparatus. May be different.

(Embodiment)
FIG. 1 is a diagram schematically showing a schematic configuration of a silicon carbide removing apparatus according to an embodiment of the present invention. In FIG. 1, the configuration inside the processing chamber 11 (however, excluding the rotating shaft 16) is shown in a sectional view.

Referring to FIG. 1, a silicon carbide removing apparatus 10 of the present embodiment includes a processing chamber 11, a stage 13, a heating unit 14, a rotating shaft 16, a rotation driving unit 17, and a light transmissive window member 18. A fluorine-containing gas supply unit 25, an oxygen-containing gas supply unit 26, a cleaning gas supply line 28, a first valve 31, a second valve 32, a plasma generation unit 35, and a cleaning gas introduction pipe 36. A surface roughness measuring instrument 41, a control unit 43, an exhaust line 46, and a vacuum pump 47.
Silicon carbide removing apparatus 10 is an apparatus different from the silicon carbide film forming apparatus that forms silicon carbide.

The processing chamber 11 has a through-hole 11 </ b> A formed in the upper part 11-1 of the processing chamber 11. 11 A of penetration parts are arrange | positioned so that the part which opposes the light irradiation and light-receiving part 41A of the surface roughness measuring device 41 among the upper parts 11-1 of the processing chamber 11 may be penetrated.
The processing chamber 11 defines a reaction space A. The processing chamber 11 accommodates the stage 13, the member 20 of the silicon carbide film forming apparatus fixed to the upper surface 13 a of the stage 13 and deposited with silicon carbide 21 (for example, 3C—SiC) as a deposit, and the rotating shaft 16. doing.

When the silicon carbide 21 deposited on the member 20 of the silicon carbide film forming apparatus was removed, the processing chamber 11 (in other words, the reaction space A) was converted into plasma as a cleaning gas through the cleaning gas introduction pipe 36. A fluorine-containing gas and a plasmatized oxygen-containing gas are supplied.
Therefore, the processing chamber 11 is made of a material that is sufficiently resistant to the fluorine-containing gas.

Here, member 20 of the silicon carbide film forming apparatus will be described. As a material constituting the member 20 of the silicon carbide film forming apparatus, for example, bulk silicon carbide (specifically, for example, a sintered body of silicon carbide (3C—SiC)) can be used.
The surface of bulk silicon carbide (specifically, for example, a sintered body of silicon carbide (3C—SiC)) (in other words, the surface 20a of the member 20 of the silicon carbide film forming apparatus) is silicon carbide 21 (for example, The surface roughness is smaller than the roughness of the surface 21a of (3C—SiC) (average surface roughness Ra is about 50 to 200 μm).
Specifically, the surface of bulk silicon carbide (for example, a sintered body of silicon carbide (3C—SiC)) has an average surface roughness Ra of about 0.1 to 10 μm.

  Thus, the surface roughness of the surface 20a of the member 20 of the silicon carbide film forming apparatus (in other words, the surface of bulk silicon carbide (for example, the surface of a sintered body of silicon carbide (3C-SiC)) and the carbonization to be removed. The roughness of the surface 21a of silicon 21 (for example, 3C-SiC) is greatly different.

Therefore, in the present invention, the surface roughness of the surface 21a of the silicon carbide 21 that is the deposit to be removed and the surface 20a of the member 20 of the silicon carbide film forming apparatus that is not to be damaged by the etching for removing the silicon carbide 21. Paying attention to the difference, the time point when the silicon carbide 21 is removed (in other words, the end point of the removal of the silicon carbide 21) is detected.
As member 20 of the silicon carbide film forming apparatus, for example, a susceptor on which a substrate (not shown) on which a silicon carbide film is formed can be placed.

  In the present embodiment, the case where bulk silicon carbide is used as an example of the material of the member 20 of the silicon carbide film forming apparatus has been described as an example. However, instead of this, SiC coated carbon (graphite base) is used. A material whose surface is coated with SiC) may be used. The average surface roughness Ra of the SiC-coated carbon is about 10 to 30 μm.

The stage 13 has a disk shape and is accommodated in the processing chamber 11. The upper surface 13a of the stage 13 is a flat surface.
The bottom of the stage 13 is connected to the upper end of the rotating shaft 16. Thereby, when the rotating shaft 16 is rotated at a predetermined rotational speed by the rotation driving unit 17, the stage 13 and the member 20 of the silicon carbide film forming apparatus fixed on the stage 13 are also rotated.

  Therefore, when cleaning silicon carbide 21 (when removing silicon carbide 21), surface roughness measuring instrument 41 uses surface 20a of member 20 of the silicon carbide film forming apparatus (if silicon carbide 21 remains, carbonization is performed). It is possible to measure the surface roughness of a wide area rather than a part of the narrow area of the surface 21a) of the silicon carbide 21 attached to the member 20 of the silicon film forming apparatus.

  The heating unit 14 is provided in the stage. The heating unit 14 is fixed on the stage 13 and the temperature of the member 20 of the silicon carbide film forming apparatus on which the silicon carbide 21 is deposited becomes a predetermined temperature (specifically, for example, a temperature of 250 to 300 ° C.). To heat. As the heating unit 14, for example, a heater can be used.

  Thus, by heating so that the temperature of the member 20 of the silicon carbide film forming apparatus on which the silicon carbide 21 is deposited becomes a temperature of 250 to 300 ° C., the plasma-containing fluorine-containing material is contained during the cleaning of the silicon carbide 21. The cleaning performance can be improved by accelerating the reaction between the gas and the plasma-containing oxygen-containing gas and the silicon carbide 21.

Note that heating member 20 of the silicon carbide film forming apparatus at a temperature higher than 600 ° C. is not preferable because the member 20 of the silicon carbide film forming apparatus changes in heat.
Further, heating the member 20 of the silicon carbide film forming apparatus at a temperature higher than 600 ° C. is not preferable because the processing chamber 11 and the plasma-containing fluorine-containing gas and oxygen-containing gas (cleaning gas) react.

The rotary shaft 16 has an end portion connected to the bottom portion of the stage 13 and the other end portion connected to the rotation drive unit 17.
The rotation drive unit 17 is disposed below the stage 13. The rotation drive unit 17 is connected to the lower end portion of the rotation shaft 16. Rotation drive unit 17 rotates member 20 of the silicon carbide film forming apparatus fixed on stage 13 through rotation shaft 16 at a predetermined number of rotations.

  The light transmissive window member 18 is disposed so as to close the penetrating portion 11A. The light transmissive window member 18 irradiates the surface 20 a of the member 20 of the silicon carbide film forming apparatus accommodated in the processing chamber 11 (or the surface 21 a of the silicon carbide 21 when the silicon carbide 21 remains). And a member for irradiating light (for example, laser light) of the light receiving unit 41A.

For example, quartz, sapphire, calcium fluoride, barium fluoride, lithium fluoride, zinc selenide, magnesium fluoride, or the like can be used as a material constituting the light transmissive window member 18.
Considering the corrosion resistance, heat resistance, and light irradiation of the plasma-containing fluorine-containing gas and oxygen-containing gas, and the transmittance of the laser light irradiated from the light receiving portion 41A, the material constituting the light transmissive window member 18 is as follows: Sapphire is most preferred.

The fluorine-containing gas supply unit 25 is connected to a first branch line 28-1 branched from the cleaning gas supply line 28. The fluorine-containing gas supply unit 25 is connected to the plasma generation unit 35 via the first branch line 28-1.
The fluorine-containing gas supply unit 25 supplies the fluorine-containing gas to the plasma generation unit 35 via the first branch line 28-1 and the first valve 31. The fluorine-containing gas removes silicon (silicon component) contained in the silicon carbide 21 that is a deposit.

Examples of the fluorine-containing gas include fluorine (F ₂ -GWP: 0), hydrogen fluoride (HF-GWP: 0), hydrofluorocarbon (CxHyFz (x, y, z are integers of 1 or more), for example, CH _3. A gas containing at least one of F-GWP-97) can be used.

Examples of the fluorine-containing gas include fluorocarbon (CF ₄ -GWP: 7,390, C ₂ F ₆ -GWP: 12,200), sulfur hexafluoride (SF ₆ -GWP: 22,800), and trifluoride. nitrogen _(NF 3 -GWP: 17,200), chlorine trifluoride _(ClF 3 -GWP: 0), carbonyl difluoride _(COF 2 -GWP: 1) may be used or the like.
However, since these gases are gases having a large global warming potential (GWP), they are not preferable from the viewpoint of global warming. From the viewpoint of warming, the fluorine-containing gas is preferably a low environmental load gas such as F ₂ or HF having a small GWP value.

The oxygen-containing gas supply unit 26 is connected to a second branch line 28-2 branched from the cleaning gas supply line 28. The oxygen-containing gas supply unit 26 is connected to the plasma generation unit 35 via the second branch line 28-2.
The oxygen-containing gas supply unit 26 supplies the oxygen-containing gas to the plasma generation unit 35 via the second branch line 28-2 and the second valve 32. The oxygen-containing gas removes carbon (carbon component) contained in the silicon carbide 21.

Examples of the oxygen-containing gas include at least one of oxygen (O ₂ ), ozone (O ₃ ), nitrogen oxide (NxOy (x and y are integers of 1 or more)), and water vapor (H ₂ O). Gas containing can be used.

One end of the cleaning gas supply line 28 is branched into first and second branch lines 28-1 and 28-2, and the other end is connected to the plasma generator 35.
The cleaning gas supply line 28 is a line for supplying a fluorine-containing gas and / or an oxygen-containing gas to the plasma generator 35.

The first valve 31 is provided in the first branch line 28-1. The first valve 31 is a valve for selecting whether or not to supply the fluorine-containing gas and adjusting the supply amount of the fluorine-containing gas.
The second valve 32 is provided in the second branch line 28-2. The second valve 32 is a valve for selecting whether or not to supply the oxygen-containing gas and adjusting the supply amount of the oxygen-containing gas.

  The plasma generating unit 35 is connected to the fluorine-containing gas supply unit 25 and the oxygen-containing gas supply unit 26 via the cleaning gas supply line 28. When performing the cleaning process of the silicon carbide 21, a fluorine-containing gas and / or an oxygen-containing gas is supplied to the plasma generation unit 35 via the cleaning gas supply line 28.

  The plasma generator 35 converts the fluorine-containing gas and / or the oxygen-containing gas into plasma and supplies the plasma-containing fluorine-containing gas and / or plasma-ized oxygen-containing gas into the processing chamber 11.

  In order to efficiently convert the fluorine-containing gas and oxygen-containing gas, which are cleaning gases, into plasma, an inert gas such as Ar, He, or Ne may be added as a discharge gas to the fluorine-containing gas and oxygen-containing gas. .

The cleaning gas introduction pipe 36 is arranged so that one end thereof is connected to the plasma generation unit 35 and the other end penetrates the upper portion 11-1 of the processing chamber 11.
The cleaning gas introduction pipe 36 is exposed to the reaction space A and has an introduction port 36 </ b> A that faces the upper surface 13 a of the stage 13. The introduction port 36A introduces, for example, a cleaning gas in which a plasma-containing fluorine-containing gas and a plasma-ized oxygen-containing gas are mixed into the processing chamber 11.

  The introduction port 36A is a position where the distance D between the position B of the upper surface 13a of the stage 13 facing the introduction port 36A and the center C of the stage 13 is larger than half the diameter R of the stage 13 (= R / 2). Is arranged.

  Thus, the introduction port 36A for introducing the cleaning gas in which the plasma-containing fluorine-containing gas and the plasma-ized oxygen-containing gas are mixed into the processing chamber 11 is used as the upper surface 13a of the stage 13 facing the introduction port 36A. The silicon carbide 21 is deposited on the cleaning gas by disposing the distance D between the position B and the center C of the stage 13 at a position where the distance D is larger than half the diameter R of the stage 13 (= R / 2). The entire member 20 of the silicon carbide film forming apparatus can be distributed.

  The surface roughness measuring instrument 41 includes a light irradiation and light receiving unit 41A. The surface roughness measuring instrument 41 is disposed above the processing chamber 11 so that the light irradiation / light receiving unit 41A and the light transmissive window member 18 face each other.

  The light irradiation and light receiving unit 41 </ b> A passes through the light transmissive window member 18 and the surface 20 a of the member 20 of the silicon carbide film forming apparatus accommodated in the processing chamber 11 (if the silicon carbide 21 remains, the carbonization is performed. The surface 21a) of the silicon 21 is irradiated with light (for example, laser light), and the surface 20a of the member 20 of the silicon carbide film forming apparatus (if the silicon carbide 21 remains, the surface 21a of the silicon carbide 21). The reflected light (for example, laser light) is received.

  Surface roughness measuring instrument 41 emits light (for example, laser light) reflected on surface 20a of member 20 of the silicon carbide film forming apparatus (or surface 21a of silicon carbide 21 if silicon carbide 21 remains). By analyzing, the data regarding the surface roughness of the surface 20a of the member 20 of the silicon carbide film-forming apparatus or the surface 21a of the silicon carbide 21 is acquired.

  The surface roughness measuring instrument 41 is electrically connected to the control unit 43. The surface roughness measuring instrument 41 transmits data related to the surface roughness of the surface 20a of the member 20 of the silicon carbide film forming apparatus or the surface 21a of the silicon carbide 21 continuously measured from the start of the cleaning process to the control unit 43 in real time. .

  Further, when cleaning silicon carbide 21 (when removing silicon carbide 21), stage 13 to which member 20 of the silicon carbide film forming apparatus is fixed rotates, so that surface roughness measuring instrument 41 forms silicon carbide film. The surface 20a of the apparatus member 20 (if silicon carbide 21 remains, the surface 21a of the silicon carbide 21 adhered to the member 20 of the silicon carbide film forming apparatus) is not a part of the narrow area but the surface of a wide area The roughness can be measured.

Thereby, the control part 43 calculates average surface roughness Ra based on the surface roughness data of the wide area | region which the surface roughness measuring device 41 measured, and silicon carbide based on this average surface roughness Ra It is possible to determine whether or not the removal of 21 has been completed.
Therefore, the point in time when silicon carbide 21 is reliably removed from the entire surface 20a of member 20 of the silicon carbide film forming apparatus can be detected as the end point of cleaning of silicon carbide 21.

That is, it is possible to detect the correct end point of the cleaning process in which the silicon carbide 21 is removed from the entire surface 20a of the member 20 of the silicon carbide film forming apparatus.
This eliminates the need for over-cleaning for removing the remaining silicon carbide 21 (deposits) after detecting the end point of the conventional silicon carbide cleaning process. Damage to the member 20 can be suppressed.

  As the surface roughness measuring instrument 41, for example, a non-contact type laser displacement meter can be used. Thus, by using a non-contact type laser displacement meter as the surface roughness measuring instrument 41, it becomes possible to arrange the surface roughness measuring instrument 41 outside the processing chamber 11, and therefore, with the cleaning gas, It can suppress that the surface roughness measuring device 41 is damaged.

  The control unit 43 includes a heating unit 14, a rotation drive unit 17, a fluorine-containing gas supply unit 25, an oxygen-containing gas supply unit 26, a first valve 31, a second valve 32, a plasma generation unit 35, and surface roughness measurement. It is electrically connected to the vessel 41 and performs overall control of the silicon carbide removing device 10.

  The control unit 43 includes a storage unit 43A, a calculation unit 43B, and a display unit 43C. In the storage unit 43A, a program for operating the silicon carbide removing device 10 inputted in advance and a threshold value E (preliminarily used for determining whether or not to remove the silicon carbide 21 (in other words, the cleaning process) are stopped). The set threshold value), the time (predetermined time F) that is continuously lower than the threshold value E, which is a determination criterion when stopping the removal of the silicon carbide 21, and the like are stored.

  As the threshold value E, the value of the average surface roughness Ra of the member 20 of the new silicon carbide film forming apparatus in which the silicon carbide 21 is not deposited, or the average surface of the silicon carbide 21 deposited on the member 20 of the silicon carbide film forming apparatus. A value of 1/5 of the roughness Ra or the like can be used.

The predetermined time F depends on the size of the member 20 of the silicon carbide film forming apparatus. A long time is set as the predetermined time F when the member 20 of the silicon carbide film forming apparatus is large, and a short time is set as the predetermined time F when the member 20 of the silicon carbide film forming apparatus is small.
For example, when the size of the member 20 of the silicon carbide film forming apparatus is 1 cm long × 1 cm wide × 1 cm high, the predetermined time F can be 3 minutes.

  In this way, when the average surface roughness Ra measured by the surface roughness measuring instrument 41 falls below the threshold value E for a predetermined time F, the removal treatment of the silicon carbide 21 is stopped, so that the carbonization is reliably performed. The end point of the silicon 21 removal process can be detected.

The computing unit 43B obtains the average surface roughness Ra based on the surface roughness data measured by the surface roughness measuring instrument 41. And operation part 43B judges whether removal of silicon carbide 21 was completed based on average surface roughness Ra, threshold value E, and predetermined time F.
Further, the calculation unit 43B creates graphs as shown in FIGS. 3 and 4 to be described later, using the surface roughness data measured by the surface roughness measuring instrument 41.
Display unit 43C displays operating conditions of silicon carbide removing device 10, graphs shown in FIGS. 3 and 4 to be described later, and the like. As the display unit 43C, for example, a liquid crystal screen can be used.

The exhaust line 46 is a line for exhausting the gas existing in the processing chamber 11 to the outside of the processing chamber 11. One end of the exhaust line 46 is connected to the lower part 11-2 so as to penetrate the lower part 11-2 of the processing chamber 11.
The vacuum pump 47 is provided in the exhaust line 46. The vacuum pump 47 is a pump for exhausting the gas existing in the processing chamber 11.

According to the silicon carbide removing apparatus of the present embodiment, a fluorine-containing gas supply unit 25 that supplies a fluorine-containing gas, an oxygen-containing gas supply unit 26 that supplies an oxygen-containing gas, a fluorine-containing gas supply unit 25, and an oxygen-containing gas The fluorine-containing gas and the oxygen-containing gas that are connected to the gas supply unit 26 are turned into plasma, and the fluorine-containing gas that is turned into plasma on the member 20 of the silicon carbide film forming apparatus disposed in the processing chamber 11, and the oxygen that is turned into plasma And a plasma generation unit 35 that supplies the contained gas, so that the silicon component contained in the silicon carbide 21 that is a deposit is selectively removed by the plasma-containing fluorine-containing gas, and the carbon contained in the silicon carbide 21 Components are selectively removed by the oxygenated gas that has been plasmatized.
Thereby, since silicon carbide 21 deposited on surface 20a of member 20 of the silicon carbide film forming apparatus is accurately removed, the entire surface 20a of member 20 of the silicon carbide film forming apparatus can be exposed.

  Further, a member 20 of a silicon carbide film forming apparatus disposed in the processing chamber 11 and having silicon carbide 21 deposited on the surface 20a is fixed, and a rotating stage 13 and a silicon carbide film forming apparatus having silicon carbide 21 deposited thereon are fixed. The surface roughness measuring instrument 41 for measuring the surface roughness of the member 20, so that the surface 20 a of the member 20 of the silicon carbide film forming apparatus can be obtained when the silicon carbide 21 is cleaned (when the silicon carbide 21 is removed). (When silicon carbide 21 remains, it is possible to measure the surface roughness of a wide area rather than a part of a narrow area of the surface 21a of silicon carbide 21 deposited on member 20 of the silicon carbide film forming apparatus). It becomes possible.

Then, the average surface roughness Ra is calculated based on the surface roughness data continuously acquired by the surface roughness measuring instrument 41, and the carbonization is performed based on the average surface roughness Ra, the threshold value E, and the predetermined time F. By detecting the end point of the cleaning process of the silicon 21 and having the control unit 43 stop the cleaning process of the silicon carbide 21 when the end point is detected, the surface 20a of the member 20 of the silicon carbide film forming apparatus is widened. Based on the surface roughness of the region, the end point of the cleaning process of silicon carbide 21 can be detected.
Therefore, the time point at which silicon carbide 21 deposited on surface 20a of member 20 of the silicon carbide film forming apparatus is completely removed can be detected as the end point of the cleaning process of silicon carbide 21.

  This eliminates the need for over-cleaning for removing the remaining silicon carbide 21 (deposits) after detecting the end point of the conventional silicon carbide cleaning process. Damage to the member 20 can be suppressed.

  In FIG. 1, as an example, the case where the position of the surface roughness measuring instrument 41 is fixed has been described as an example. However, for example, the surface roughness measuring instrument 41 reciprocates in the radial direction of the stage 13. In this way, a driving unit (not shown) for moving the surface roughness measuring instrument 41 is provided, and the light transmissive window member 18 is arranged so as to face the light irradiation and light receiving unit 41A of the moving surface roughness measuring instrument 41. May be.

  In this case, it is possible to measure the surface roughness of a wider region of surface 21a of silicon carbide 21 attached to member 20 of the silicon carbide film forming apparatus and surface 20a of member 20 of the silicon carbide film forming apparatus. Thereby, the precision of the end point detection of the cleaning process of silicon carbide 21 can be further increased.

FIG. 2 is a flowchart for explaining the silicon carbide removing method according to the embodiment of the present invention.
Next, with reference to FIG.1 and FIG.2, the silicon carbide removal method which concerns on this Embodiment is demonstrated.

  First, when the process shown in FIG. 2 is started, in STEP 1, removal of silicon carbide in which silicon carbide 21 as a deposit is deposited from a film forming chamber (not shown) of a silicon carbide film forming apparatus (not shown). The member 20 (see FIG. 1) is taken out.

Next, in STEP 2, the member 20 of the silicon carbide removing device in which the silicon carbide 21 is deposited is fixed on the stage 13 in the processing chamber 11 of the silicon carbide removing device 10 shown in FIG. 1.
Then, the temperature of the member 20 of the silicon carbide removing device is within a predetermined temperature (for example, in a range of 250 ° C. to 300 ° C.) by the heating unit 14 while rotating the stage 13 at a predetermined rotation speed (for example, 5 to 10 rpm). To a temperature of 2).

At this time, when the stage 13 rotates, the member 20 of the silicon carbide removing device fixed on the stage 13 also rotates.
Further, the silicon carbide film 21 was heated so that the temperature of the member 20 of the silicon carbide film forming apparatus on which the silicon carbide 21 was deposited was in the range of 250 ° C. to 300 ° C., so that the silicon carbide 21 was turned into plasma. Cleaning performance can be improved by accelerating the reaction between the fluorine-containing gas and the plasma-ized oxygen-containing gas and the silicon carbide 21.

Note that heating the member 20 of the silicon carbide film forming apparatus at a very high temperature (for example, a temperature higher than 600 ° C.) is not preferable because the member 20 of the silicon carbide film forming apparatus changes heat.
Further, when the member 20 of the silicon carbide film forming apparatus is heated at a very high temperature (for example, a temperature higher than 600 ° C.), the processing chamber 11 reacts with the plasma-containing fluorine-containing gas and oxygen-containing gas (cleaning gas). Therefore, it is not preferable.

Subsequently, in STEP 3, supply of a gas (cleaning gas) in which the plasma-containing fluorine-containing gas and the plasma-ized oxygen-containing gas are mixed into the processing chamber 11 is started, and the surface roughness measuring device 41 uses the gas. Measurement of the surface roughness of surface 21a of silicon carbide 21 deposited on surface 20a of member 20 of the silicon carbide film forming apparatus is started.
Data relating to the surface roughness of the surface 21 a of the silicon carbide 21 measured by the surface roughness measuring instrument 41 is transmitted to the control unit 43 in real time.

  Since this stage is an initial stage of the process of removing the silicon carbide 21, the silicon carbide 21 is hardly removed. In addition, since member 20 of the silicon carbide film forming apparatus in which silicon carbide 21 is deposited is rotating, it is not related to the surface roughness related to the narrow region of surface 21a of silicon carbide 21 but to the wide region of surface 21a of silicon carbide 21. Surface roughness data can be acquired.

  Moreover, the silicon component contained in the silicon carbide 21 is removed by the plasmatized fluorine-containing gas by using a gas in which the plasmatized fluorine-containing gas and the plasmatized oxygen-containing gas are mixed as the cleaning gas. Since the carbon component contained in the silicon carbide 21 can be removed by the plasma-containing oxygen-containing gas, the removal performance of the silicon carbide 21 can be improved.

In the description of STEP 3 above, a case where a gas obtained by mixing a plasma-containing fluorine-containing gas and a plasma-ized oxygen-containing gas is supplied as an etching gas has been described as an example. A first step of supplying a fluorine-containing gas (step of removing a silicon component contained in the silicon carbide 21) and a second step of supplying a plasmatized oxygen-containing gas (a carbon component contained in the silicon carbide 21). And the step of removing) may be alternately repeated.
In this case, it is possible to obtain the same effect as in the case where a gas obtained by mixing a plasma-containing fluorine-containing gas and a plasma-ized oxygen-containing gas is used as an etching gas.

Next, in STEP 4, the silicon carbide 21 removal process and surface roughness measurement described in STEP 3 are continued. At this stage, since the removal of silicon carbide 21 by the cleaning gas is in progress, the portion covered with silicon carbide 21 is removed, and surface 20a of member 20 of the silicon carbide film forming apparatus is exposed.
Therefore, the surface roughness measuring instrument 41 is the surface roughness of the surface 21a of the silicon carbide 21 remaining on the member 20 of the silicon carbide film forming apparatus and the silicon carbide film forming apparatus exposed by removing the silicon carbide 21. The surface roughness of the surface 20a of the member 20 will be measured.
Even at this stage, the member 20 of the silicon carbide film forming apparatus rotates at a predetermined rotational speed.

Next, in STEP 5, whether or not the value of the average surface roughness Ra obtained based on the surface roughness measured by the surface roughness measuring instrument 41 is smaller than the threshold value E stored in the storage unit 43A of the control unit 43. Is determined.
When it is determined in STEP 5 that the value of the average surface roughness Ra is smaller than the threshold value E (determined as Yes (positive determination)), the process proceeds to STEP 6.
Moreover, when it determines with the value of average surface roughness Ra being more than the threshold value E in STEP5 (it determines with No (negative determination)), a process returns to STEP4.

  As the threshold value E, for example, the value of the average surface roughness Ra of a member 20 of a new silicon carbide film forming apparatus in which no silicon carbide 21 is deposited, or the value of the silicon carbide 21 deposited on the member 20 of the silicon carbide film forming apparatus. A value of 1/5 of the average surface roughness Ra can be used.

Next, in STEP 6, the controller 43 determines whether or not the time when the average surface roughness Ra is continuously smaller than the threshold value E has reached a predetermined time F.
In STEP 6, when it is determined that the time during which the average surface roughness Ra is continuously smaller than the threshold value E has reached the predetermined time F (determined as Yes (positive determination)), the process proceeds to STEP 7.
In STEP 6, when it is determined that the time when the average surface roughness Ra is continuously smaller than the threshold value E has not reached the predetermined time F (No (determination determination)), the processing is STEP 4. Return to.

The predetermined time F can be appropriately set depending on the size of the member 20 of the silicon carbide film forming apparatus.
As described above, when the average surface roughness Ra measured by the surface roughness measuring device 41 continuously falls below the threshold value E for a predetermined time F, the silicon carbide 21 removal process is stopped, whereby the silicon carbide 21 is removed. The end point of removal can be reliably detected.

Next, in STEP 7, when it is determined in STEP 6 that the time during which the average surface roughness Ra is continuously smaller than the threshold value E has reached a predetermined time F, the control unit 43 rotates and heats the stage 13. The heating of the member 20 of the silicon carbide film forming apparatus by the unit 14, the measurement of the surface roughness by the surface roughness measuring device 41, the supply of the fluorine-containing gas, and the supply of the oxygen-containing gas are stopped.
Thereby, the removal process of silicon carbide 21 is completed.

  Next, in STEP 8, the member 20 of the silicon carbide film forming apparatus from which the silicon carbide 21 has been removed is taken out of the processing chamber 11. Thereby, the process of the silicon carbide removing method according to the present embodiment shown in FIG. 2 is completed.

According to the silicon carbide removing method of the present embodiment, a gas obtained by mixing a plasma-containing fluorine-containing gas and a plasma-ized oxygen-containing gas is used as a cleaning gas, so that silicon carbide 21 that is a deposit is included. The silicon component is selectively removed by the plasma-containing fluorine-containing gas, and the carbon component contained in the silicon carbide 21 is selectively removed by the plasma-ized oxygen-containing gas.
Thereby, since silicon carbide 21 deposited on surface 20a of member 20 of the silicon carbide film forming apparatus is accurately removed, the entire surface 20a of member 20 of the silicon carbide film forming apparatus can be exposed.

  Further, in the step of removing silicon carbide 21, member 20 of the silicon carbide film forming apparatus in which silicon carbide 21 is deposited while rotating stage 13 on which member 20 of the silicon carbide film forming apparatus in which silicon carbide 21 is deposited is rotated. By measuring the surface roughness of the surface, the surface 20a of the member 20 of the silicon carbide film forming apparatus (if the silicon carbide 21 remains, the surface 21a of the silicon carbide 21 deposited on the member 20 of the silicon carbide film forming apparatus) ), It is possible to measure the surface roughness of a wide area rather than a part of the narrow area.

Then, when the time when the average surface roughness Ra obtained from the surface roughness continuously acquired by the surface roughness measuring instrument 41 is continuously below the threshold E reaches a predetermined time F, the silicon carbide 21 is cleaned. By detecting the end point of the process, it is possible to detect the end point of the cleaning process of the silicon carbide 21 based on the surface roughness of a wide region in the surface 20a of the member 20 of the silicon carbide film forming apparatus.
Thereby, the time point at which silicon carbide 21 deposited on surface 20a of member 20 of the silicon carbide film forming apparatus is completely removed can be detected as the end point of the cleaning process of silicon carbide 21.

  Further, after the end point of the conventional silicon carbide cleaning process is detected, the over-cleaning for removing the remaining silicon carbide 21 (deposits) is not required, so that the silicon carbide film forming apparatus member by the silicon carbide 21 cleaning process is used. 20 damage can be suppressed.

In the present embodiment, the case where the cleaning process of silicon carbide 21 is performed in the processing chamber 11 of the silicon carbide removing apparatus 10 (ex-situ method (Ex-Situ)) has been described as an example. You may perform the silicon carbide removal method of this Embodiment in the film-forming chamber (not shown) of a film | membrane apparatus.
In this case, the same effect as the silicon carbide removing method of the present embodiment can be obtained.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and within the scope of the present invention described in the claims, Various modifications and changes are possible.

(Example)
In the example, a sample (a sample corresponding to the member 20 of the silicon carbide film forming apparatus) made of SiC-coated carbon and having a thick silicon carbide (deposit) deposited using the silicon carbide removing apparatus 10 shown in FIG. A silicon carbide removal treatment was performed.
The size of the sample in which silicon carbide (deposit) was deposited thick (size including the thickness of silicon carbide (deposit) of 0.2 mm) was 10 mm long × 10 mm wide × 2.3 mm thick.
By installing SiC-coated carbon in another heating device and introducing SiH _{4 as} a silicon-containing gas and C ₃ H ₈ ) as a carbon-containing gas into the heating device at a high temperature of 1500 ° C. Then, silicon carbide was deposited on the sample.

The high frequency applied power was 1000 W (2.56 GHz). The temperature of the sample in the processing chamber 11 was 300 ° C. The pressure in the processing chamber 11 was 2 torr (266.6 Pa).
As the etching gas, a gas in which a fluorine gas (fluorine-containing gas) having a flow rate of 100 sccm, an oxygen gas having a flow rate of 500 sccm, and an argon gas having a flow rate of 500 sccm was used. The rotation speed of the stage 13 was 5 rpm (5 rotations per minute).
As the surface roughness measuring instrument 41, LT-9030M manufactured by Keyence Corporation was used.
A total of 10 minutes of silicon carbide removal treatment was performed using the above cleaning conditions.

Table 1 shows the results of measuring the average surface roughness Ra of silicon carbide deposited on the surface of the sample and / or the surface of the sample measured using the surface roughness measuring instrument 41.
As shown in Table 1, the average surface roughness Ra was measured immediately after the start of the cleaning process, 1 minute after the start of the cleaning process, 5 minutes after the start of the cleaning process, and 10 minutes after the start of the cleaning process.

  FIG. 3 shows the surface roughness of silicon carbide immediately after the start of the cleaning process, and FIG. 4 shows the surface roughness of the sample near the end of the cleaning process.

  Also, using VK-9500, a laser type film thickness measuring instrument manufactured by Keyence Corporation, the thickness of the sample before the start of the cleaning process, the thickness of silicon carbide deposited on the sample before the start of the cleaning process, and the cleaning process The thickness of the sample 10 minutes after the start and the thickness of silicon carbide deposited on the sample 10 minutes after the start of the cleaning process were measured. The results are shown in Table 2.

Referring to Table 1, the surface roughness Ra after 10 minutes of the cleaning treatment was 24.8 μm.
Referring to Table 2, from the thickness of the sample before the cleaning process and the thickness of the sample after the cleaning process for 10 minutes, the decrease in the thickness of the sample by the cleaning process is about 0.2%. It was confirmed that the etching amount (in other words, the member of the silicon carbide film forming apparatus) was very small.
Further, the thickness of the silicon carbide after the cleaning treatment for 10 minutes was 0.0 μm, and it was confirmed that no silicon carbide remained on the surface of the sample.

Next, since the average surface roughness Ra of the sample with no silicon carbide deposited was 25 μm, this was adopted as the threshold value E, and the predetermined time F was set to 3 minutes. When the silicon carbide adhering to the same sample was removed and the thickness of the remaining silicon carbide was measured, the thickness of the silicon carbide was 0 μm.
Thereby, it has been confirmed that the end point of silicon carbide can be detected using the threshold value E and a predetermined time.

(Comparative example)
FIG. 5 is a diagram schematically showing a schematic configuration of the silicon carbide removing device used when acquiring data of the comparative example. 5, the same components as those of silicon carbide removing apparatus 10 shown in FIG. FIG. 5 is a cross-sectional view showing the configuration inside the processing chamber 11 (excluding the rotating shaft 16).

  In the comparative example, a sample having the same material and shape as the sample used in the example was prepared, and silicon carbide was deposited on the surface of the sample by the same method as in the example. Thereafter, the carbonization shown in FIG. Silicon carbide was removed using the silicon removing device 50. Here, silicon carbide removing apparatus 50 shown in FIG. 5 will be briefly described.

The silicon carbide removing device 50 includes a connection pipe 51 and a light emission monitor 52 in place of the through portion 11A, the light transmissive window member 18 and the surface roughness measuring instrument 41 that constitute the silicon carbide removing device 10 shown in FIG. Except for this, the configuration is the same as that of the silicon carbide removing device 10.
The connection pipe 51 connects the processing chamber 11 and the light emission monitor 52. The light emission monitor 52 is electrically connected to the control unit 43. As the luminescent monitor 52, C7460 manufactured by Hamamatsu Photonics was used.

  In the comparative example, oxygen radicals are consumed for the removal of silicon carbide during the cleaning process, and the emission intensity decreases. After the cleaning process is completed, the consumption of oxygen radicals stops and the emission intensity of oxygen radicals increases. The end point of the cleaning process (in other words, the silicon carbide removal process) was detected.

  Further, using a VK-9500 laser microscope manufactured by Keyence Corporation, the thickness of the sample before the start of the cleaning process, the thickness of silicon carbide deposited on the sample before the start of the cleaning process, The thickness of the sample after the minute and the thickness of silicon carbide deposited on the sample 10 minutes after the start of the cleaning process were measured. The results are shown in Table 3.

Referring to Table 3, since the thickness of silicon carbide after the cleaning process for 10 minutes is 19.2 μm (since silicon carbide as a deposit remains), the luminescence monitor 52 is used. It was found that the correct end point cannot be detected by the detected end point.
This is because the etching rate of the portion of silicon carbide that is tightly adhered to the surface of the sample is quite slow and difficult to remove. Even if it is not removed, the emission intensity increases, and it is considered that the end point is detected.

The present invention relates to a silicon carbide removing apparatus and a silicon carbide removing method for removing silicon carbide deposited on a member of a silicon carbide film forming apparatus.
Applicable to.

  DESCRIPTION OF SYMBOLS 10,50 ... Silicon carbide removal apparatus, 11 ... Processing chamber, 11A ... Through part, 11-1 ... Upper part, 11-2 ... Lower part, 13 ... Stage, 13a ... Upper surface, 14 ... Heating part, 16 ... Rotating shaft, 17 DESCRIPTION OF SYMBOLS ... Rotation drive part, 18 ... Light transmission window member, 20 ... Member of silicon carbide film-forming apparatus, 20a, 21a ... Surface, 21 ... Silicon carbide, 25 ... Fluorine-containing gas supply part, 26 ... Oxygen-containing gas supply part, 28 ... Cleaning gas supply line, 28-1 ... First branch line, 28-2 ... Second branch line, 31 ... First valve, 32 ... Second valve, 35 ... Plasma generator, 36 ... Cleaning Gas inlet pipe, 36A ... Inlet, 41 ... Surface roughness measuring instrument, 41A ... Light irradiation and light receiving part, 43 ... Control part, 43A ... Storage part, 43B ... Calculation part, 43C ... Display part, 46 ... Exhaust line, 47 ... Vacuum pump, 51 Connecting pipe, 52 ... light-emitting monitor, A ... reaction space, B ... position, C ... central, D ... length, E ... threshold, F ... predetermined time

Claims (12)

A silicon carbide removing device for removing silicon carbide from a surface of a member of the silicon carbide film forming device on which silicon carbide as a deposit is deposited when a silicon carbide film is formed on a substrate using the silicon carbide film forming device. There,
A processing chamber in which the silicon carbide removal process is performed;
A member disposed in the processing chamber, the member of the silicon carbide film forming apparatus having the silicon carbide deposited on the surface thereof is fixed, and a rotating stage;
A fluorine-containing gas supply unit for supplying fluorine-containing gas;
An oxygen-containing gas supply unit for supplying an oxygen-containing gas;
The fluorine-containing gas supply unit and the oxygen-containing gas supply unit are connected to convert the fluorine-containing gas and the oxygen-containing gas into plasma, and plasma is generated on members of the silicon carbide film forming apparatus disposed in the processing chamber. A plasma generating unit for supplying the converted fluorine-containing gas and the oxygenated gas into plasma;
A surface roughness measuring instrument for measuring a surface roughness of a member of the silicon carbide film forming apparatus on which the silicon carbide is deposited;
A control unit that detects the end point of the silicon carbide cleaning process based on the surface roughness data continuously acquired by the surface roughness measuring instrument, and stops the silicon carbide cleaning process when the end point is detected. When,
An apparatus for removing silicon carbide, comprising:   2. The silicon carbide removing apparatus according to claim 1, wherein the surface roughness measuring instrument is a non-contact type laser displacement meter. The surface roughness measuring instrument is disposed above the processing chamber;
3. The silicon carbide removing device according to claim 1, further comprising a light transmissive window member disposed so as to penetrate a portion of the processing chamber that faces the surface roughness measuring instrument.   4. The heating unit according to claim 1, further comprising a heating unit that is provided in the stage and that heats the member of the silicon carbide film forming apparatus to a predetermined temperature. 5. Silicon carbide removing device. A cleaning gas inlet pipe connected to the upper part of the processing chamber and the plasma generation unit and including an inlet for introducing the fluorine-containing gas into plasma and the oxygen-containing gas into plasma into the processing chamber is provided. And
The introduction port is provided to face the upper surface of the stage,
The distance between the position of the upper surface of the stage facing the introduction port and the center of the stage is larger than half of the diameter of the stage, according to any one of claims 1 to 4. Silicon carbide removing device. A silicon carbide removing method for removing silicon carbide from a surface of a member of the silicon carbide film forming apparatus on which silicon carbide as a deposit is deposited when forming a silicon carbide film on a substrate using the silicon carbide film forming apparatus. There,
Fixing a member of the silicon carbide film forming apparatus in which the silicon carbide is deposited on a stage accommodated in a processing chamber;
While removing the silicon carbide by supplying plasma-containing fluorine-containing gas and plasma-ized oxygen-containing gas into the processing chamber while rotating the stage, the silicon carbide is deposited. Continuously measuring the surface roughness of the member of the silicon carbide film forming apparatus;
When the surface roughness value continuously falls below a preset threshold value for a predetermined time, the supply of plasmatized fluorine-containing gas and plasmatized oxygen-containing gas is stopped to remove the silicon carbide. A process of stopping;
A method for removing silicon carbide, comprising:   The method for removing silicon carbide according to claim 6, wherein a surface roughness value of a member of a new silicon carbide film forming apparatus on which the silicon carbide is not deposited is used as the threshold value.   The silicon carbide removal method according to claim 6, wherein a value of one fifth of the surface roughness of the silicon carbide is used as the threshold value.   9. The method for removing silicon carbide according to claim 6, wherein an average surface roughness Ra is used as the surface roughness.   The method for removing silicon carbide according to any one of claims 6 to 9, wherein the surface roughness of the member of the silicon carbide film forming apparatus is measured in a non-contact manner.   11. The method according to claim 6, wherein when removing the silicon carbide, heating is performed so that a temperature of a member of the silicon carbide film forming apparatus fixed on the stage is 250 to 300 ° C. The silicon carbide removing method according to claim 1.   The plasma-containing fluorine-containing gas and the plasma-containing oxygen-containing portion are positioned opposite to the stage and located outside the region from the center of the stage to half the diameter of the stage. The method for removing silicon carbide according to any one of claims 6 to 11, wherein gas is supplied.

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