JP2015028139A - Curable resin composition, cured film, light-emitting element, wavelength conversion film, and method for forming light-emitting layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a curable resin composition which contains semiconductor quantum dots and is capable of easily forming a highly reliable cured film excellent in fluorescent characteristics, and to provide a cured film, a light-emitting element, a wavelength conversion film, and a method for forming a light-emitting layer.SOLUTION: There is formed the curable resin composition containing: [A] a compound with a molecular weight of 150 to 10,000 inclusive which has two or more polymerizable groups in one molecule; [B] semiconductor quantum dots; and [C] a hydrocarbon-based solvent. The curable resin composition is used to form a cured film on a substrate 12. The cured film serves as a wavelength conversion film, and it is used as a light-emitting layer 13 to form a wavelength conversion substrate 11. The wavelength conversion substrate 11 is combined with a light source substrate 18 provided with a light source 17 to constitute a light-emitting display element 100.

Description

  The present invention relates to a curable resin composition, a cured film, a light emitting element, a wavelength conversion film, and a method for forming a light emitting layer.

  Extremely small particles (dots) formed to confine electrons are called quantum dots and have recently attracted attention. The size of one quantum dot is several nanometers to several tens of nanometers in diameter, and is composed of about 10,000 atoms.

  When quantum dots are dispersed in a semiconductor thin film of a solar cell panel, energy conversion efficiency can be greatly improved, so application to solar cells has been studied (for example, see Patent Document 1). .) In addition, by changing the size of the quantum dots (changing the band gap), it is possible to change the color (emission wavelength) of the emitted fluorescence (wavelength conversion), so fluorescent probes in bio research (see Non-Patent Document 1) And application to a display element as a wavelength conversion material (see Patent Document 2 and Patent Document 3).

JP 2006-216560 A JP 2008-112154 A JP 2009-251129 A

Shintaka, “Semiconductor quantum dots, their synthesis and application to life science,” Production and Technology, Vol. 63, No. 2, 2011, p58-p65

  As shown in Examples of Non-Patent Document 1 and Patent Document 1, typical quantum dots are semiconductors made of II-V semiconductors such as CdSe (cadmium selenide), CdTe (cadmium telluride), and PbS. It is a quantum dot.

  However, for example, lead (Pb), which is the main component, is a material well known for its concern for toxicity. Further, cadmium (Cd) and its compounds are extremely toxic even at low concentrations, and are materials for which renal dysfunction and carcinogenicity are a concern. Therefore, there is a demand for the formation of semiconductor quantum dots made of a safer material.

  In addition, when semiconductor quantum dots are to be applied to a solar cell panel, a display of a display element, or the like, formation of a film or a layer composed of semiconductor quantum dots in a particle form may be required in order to utilize the fluorescence emission. That is, the formation of a wavelength conversion film (wavelength conversion film) or a light emitting layer that exhibits fluorescence may be required.

  As a method for forming a light-emitting layer using semiconductor quantum dots in the form of particles, for example, as shown in the Examples of Patent Document 1 and Patent Document 2, a layer made of semiconductor quantum dots directly on an appropriate substrate A method of forming is known. However, in such a formation method, the stability of the obtained light emitting layer is poor. In particular, there is concern about the binding property between the layer made of semiconductor quantum dots and the substrate.

  Therefore, a method of forming a layer or a film by mixing or embedding semiconductor quantum dots in a particle form in a resin material has been proposed. However, a method for forming a layer or a film together with a resin while realizing high dispersibility by using semiconductor quantum dots and maintaining fluorescence characteristics as a semiconductor quantum dot has not been sufficiently studied.

  Therefore, semiconductor quantum dots are used together with resin materials to achieve high dispersibility and form semiconductor quantum dot layers or films without degrading the fluorescence emission characteristics of semiconductor quantum dots. A technique for forming a conversion film is required. In particular, there is a demand for a resin material that is used together with semiconductor quantum dots and that is suitable for forming a light-emitting layer or a wavelength conversion film comprising semiconductor quantum dots and a resin.

  In that case, it is desirable that the resin material be used together with a semiconductor quantum dot made of a safe material and be suitable for forming a light emitting layer or a wavelength conversion film.

In addition, the light emitting layer and the wavelength conversion film made of the semiconductor quantum dots and the resin material can be easily formed, and preferably have high productivity. Therefore, it is preferable that a simple forming method such as coating can be used for forming a light emitting layer or a wavelength conversion film composed of the semiconductor quantum dots and the resin material. And it is preferable that the light emitting layer and the wavelength conversion film can be formed using methods, such as application | coating, from the liquid resin composition containing a semiconductor quantum dot and a resin component, for example.
Therefore, a resin composition that contains a semiconductor quantum dot and a resin component and that can form a light emitting layer or a wavelength conversion film by using a method such as coating is required.

Furthermore, it is preferable that the resin composition has an excellent patterning property. That is, it is preferable that patterning is possible so that the resin composition which forms a light emitting layer and a wavelength conversion film can be used suitably for the structure of light emitting elements, such as a light emitting display element. In that case, the formation of the patterned light-emitting layer and wavelength conversion film can be performed, for example, by photolithography, and can be easily realized.
Therefore, there is a need for a radiation-sensitive curable resin composition that can easily form a patterned light-emitting layer or wavelength conversion film using a known patterning method such as a photolithography method.

  The present invention has been made in view of the above problems. That is, an object of the present invention is to provide a curable resin composition that includes a semiconductor quantum dot and can easily form a highly reliable cured film having excellent fluorescence characteristics.

  Another object of the present invention is to provide a cured film that is formed using a curable resin composition containing semiconductor quantum dots and has excellent fluorescence characteristics and high reliability.

  Moreover, the objective of this invention is providing the light emitting element which has a light emitting layer formed using the curable resin composition containing a semiconductor quantum dot.

  Another object of the present invention is to provide a wavelength conversion film that is formed using a curable resin composition containing semiconductor quantum dots, has excellent fluorescence characteristics, and has high reliability.

  Furthermore, the objective of this invention is providing the formation method of the light emitting layer using the curable resin composition containing a semiconductor quantum dot.

  Other objects and advantages of the present invention will become apparent from the following description.

The first aspect of the present invention is:
[A] a compound having a molecular weight of 150 or more and 10,000 or less having two or more polymerizable groups in one molecule;
[B] It relates to a curable resin composition comprising a semiconductor quantum dot and [C] a hydrocarbon solvent.

  In the first aspect of the present invention, it is preferable to further contain an oxygen atom-containing organic solvent.

  In the first embodiment of the present invention, it is preferable to further contain a [D] polymerizable initiator.

  1st aspect of this invention WHEREIN: It is preferable that [D] polymeric initiator is a polymeric initiator containing a C1-C20 hydrocarbon group.

  1st aspect of this invention WHEREIN: Furthermore, it is preferable to contain the polymer whose weight average molecular weights which have a [E] carboxyl group are 5000 or more and 40000 or less.

  In the first aspect of the present invention, the [B] semiconductor quantum dot is selected from the group consisting of a group 2 element, a group 11 element, a group 12 element, a group 13 element, a group 14 element, a group 15 element and a group 16 element. It is preferably made of a compound containing at least two elements.

  1st aspect of this invention WHEREIN: It is preferable that a [B] semiconductor quantum dot consists of a compound which contains In as a structural component.

In the first aspect of the present invention, the [B] semiconductor quantum dot comprises an InP / ZnS compound, a CuInS ₂ / ZnS compound, an AgInS ₂ compound, a (ZnS / AgInS ₂ ) solid solution / ZnS compound, a Zn-doped AgInS ₂ compound, and a Si It is preferably at least one selected from the group consisting of compounds.

  In the first aspect of the present invention, the [A] compound is selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), and a compound represented by the following formula (3). Preferably, at least one compound is selected.

（式（１）中、Ｘは式（５）で示される２価の基、または炭素数５〜２０の２価の脂環式炭化水素基を示し、式（５）中、ｎは２〜２０の整数を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。
式（２）中、Ｒ^２は水素原子、または炭素数１〜１２のアルキル基を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。Ｗはエチレンオキサイド基またはプロピレンオキサイド基を示し、ｍは０〜４の整数を示す。
式（３）中、Ｒ^３は水素原子、または炭素数１〜１２のアルキル基を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。Ｗはエチレンオキサイド基またはプロピレンオキサイド基を示し、ｍは０〜４の整数を示す。）

(In the formula (1), X represents a divalent group represented by the formula (5) or a divalent alicyclic hydrocarbon group having 5 to 20 carbon atoms, and in the formula (5), n represents 2 to 2 It represents an integer of 20. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group.
In formula (2), R ² represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4.
In formula (3), R ³ represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4. )

  The second aspect of the present invention relates to a cured film characterized by being formed using the curable resin composition of the first aspect of the present invention.

  A third aspect of the present invention relates to a light emitting device having a light emitting layer formed using the curable resin composition of the first aspect of the present invention.

4th aspect of this invention is related with the wavelength conversion film formed using the curable resin composition of 1st aspect of this invention.

A fifth aspect of the present invention is a method for forming a light emitting layer of a light emitting element,
(1) The process of forming the coating film of the curable resin composition of the 1st aspect of this invention on a board | substrate,
(2) A step of irradiating at least a part of the coating film formed in step (1),
(3) A step of developing the coating film irradiated with radiation in step (2), and (4) a step of exposing the coating film developed in step (3). About.

  According to the 1st aspect of this invention, the curable resin composition which contains a semiconductor quantum dot and can form easily the highly reliable cured film excellent in the fluorescence characteristic is provided.

  Moreover, according to the 2nd aspect of this invention, the cured film which is formed using the curable resin composition containing a semiconductor quantum dot, is excellent in the fluorescence characteristic, and has high reliability is provided.

  Moreover, according to the 3rd aspect of this invention, the light emitting element which has a light emitting layer formed using the curable resin composition containing a semiconductor quantum dot is provided.

  Moreover, according to the 4th aspect of this invention, it is formed using the curable resin composition containing a semiconductor quantum dot, and is providing the wavelength conversion film which is excellent in the fluorescence characteristic and has high reliability.

  Furthermore, according to the 5th aspect of this invention, the formation method of the light emitting layer of a light emitting element using the curable resin composition containing a semiconductor quantum dot is provided.

It is sectional drawing of the board | substrate explaining the coating-film formation process in formation of the cured film of 2nd Embodiment of this invention. It is sectional drawing which illustrates typically the radiation irradiation process in formation of the cured film of 2nd Embodiment of this invention. It is sectional drawing of the board | substrate explaining the image development process in formation of the cured film of 2nd Embodiment of this invention. It is sectional drawing of the cured film and board | substrate explaining the hardening process in formation of the cured film of 2nd Embodiment of this invention. It is sectional drawing which shows typically the light emitting display element of 3rd Embodiment of this invention.

  The curable resin composition of the present invention is [A] a compound having two or more polymerizable groups in one molecule and having a weight average molecular weight of 150 or more and 10,000 or less, that is, [A] two or more compounds in one molecule. A compound having a polymerizable group and having a weight average molecular weight of 150 to 10,000 (hereinafter also simply referred to as [A] component), [B] semiconductor quantum dots (hereinafter also simply referred to as [B] component), and [C ] A curable resin composition containing a hydrocarbon solvent (hereinafter also simply referred to as [C] component).

  The curable resin composition of the present invention contains a [C] hydrocarbon solvent and is a liquid resin composition suitable for a simple film or layer forming method such as coating.

  Although the curable resin composition of the present invention contains [B] semiconductor quantum dots together with the [A] component, [B] a good dispersion state of the semiconductor quantum dots by containing [C] a hydrocarbon solvent. Can be realized.

  [B] Semiconductor quantum dots tend to aggregate in a highly polar solvent, and it is difficult to realize a good dispersion state. [B] In the semiconductor quantum dots, the agglomeration impairs the properties of the quantum dots. On the other hand, the [B] semiconductor quantum dot tends to realize a good dispersion state in a low polarity solvent. Therefore, the curable resin composition of the present invention contains a hydrocarbon solvent capable of realizing low polarity as the [C] component. And as a resin component, what is suitable for making it melt | dissolve or disperse | distribute to a [C] hydrocarbon solvent is selected. More specifically, the [A] component suitable for dissolving or dispersing in the [C] hydrocarbon solvent is selected and contained.

  As a result, the curable resin composition of the present invention can form a liquid resin composition in which a good dispersion state of [B] semiconductor quantum dots is realized. And the curable resin composition of this invention can form the layer and film | membrane in which the [B] semiconductor quantum dot was disperse | distributed using simple formation methods, such as application | coating.

Moreover, the curable resin composition of this invention can have radiation sensitivity. Therefore, the curable resin composition of the present invention comprises a [D] polymerizable initiator (hereinafter also simply referred to as [D] component) and a weight average molecular weight having an [E] carboxyl group of 5000 to 40000. It is preferable to contain a coalescence (hereinafter also simply referred to as [E] component). And the curable resin composition of this invention can be patterned using the photolithographic method etc. based on the radiation sensitivity.
In the present invention, “radiation” irradiated upon exposure includes visible light, ultraviolet light, far ultraviolet light, X-rays, charged particle beams, and the like.

  Also, in the photolithography method, a so-called resist composition is applied to the surface of a substrate to be processed or processed to form a resist film, and a predetermined resist pattern is exposed by irradiating light or an electron beam. An exposure process for forming a resist pattern latent image, a heating process as necessary, a development process for developing the resist pattern to form a desired fine pattern, and a process such as etching the substrate using the fine pattern as a mask The process etc. which perform are included.

  The curable resin composition of the present invention is patterned when necessary to form the cured film of the present invention. The cured film of the present invention is constituted by including [B] semiconductor quantum dots in a resin.

The cured film of the present invention has a fluorescence emission (wavelength conversion) function based on [B] semiconductor quantum dots. Therefore, it can be used as a wavelength conversion film or a light emitting layer that emits fluorescence having a wavelength different from that of excitation light.
In particular, the cured film of the present invention is suitable for use as a light emitting layer of a light emitting element, and can be used for the structure of the light emitting element of the present invention described later.

  Hereinafter, the curable resin composition, the cured film, the light emitting element, the wavelength conversion film, and the method for forming the light emitting layer of the present invention will be described.

Embodiment 1 FIG.
<Curable resin composition>
As described above, the curable resin composition of the first embodiment of the present invention contains the [A] component, the [B] semiconductor quantum dot, and the [C] hydrocarbon solvent as essential components.

  [C] By containing a hydrocarbon solvent, the curable resin composition of the present invention can form a liquid resin composition in which a good dispersion state of [B] semiconductor quantum dots is realized. The [A] component, which is a resin component, is used with a [C] hydrocarbon solvent, and has a weight average molecular weight of 150 or more and 10,000 having two or more polymerizable groups in one molecule that can be dissolved or dispersed. It is selected from the following compounds.

  The curable resin composition of the present invention uses a method such as coating, and [B] contains a semiconductor quantum dot and has an excellent fluorescence emission (wavelength conversion) function (hereinafter simply referred to as fluorescence or fluorescence characteristics). A cured film according to an embodiment of the present invention can be formed.

  Moreover, the curable resin composition of this invention can have radiation sensitivity. Therefore, it is preferable that the curable resin composition of the present invention further contains [D] a polymerizable initiator, and furthermore, [E] a polymer having a carboxyl group and having a weight average molecular weight of 5,000 to 40,000. It is preferable to contain.

And the curable resin composition of this invention can contain the other arbitrary component mentioned above, unless the effect of this invention is impaired.
Hereinafter, the components contained in the curable resin composition of the first embodiment of the present invention will be described.

[[A] Compound having two or more polymerizable groups in one molecule and having a molecular weight of 150 or more and 10,000 or less]
The curable resin composition of the first embodiment of the present invention includes [A] a compound having a molecular weight of 150 or more and 10,000 or less having two or more polymerizable groups in one molecule.

  Examples of the polymerizable group of the component [A] include a (meth) acryloyl group, a vinyl group, an oxiranyl group, and an oxetanyl group. Of these, a (meth) acryloyl group is particularly preferred.

  The weight average molecular weight of the component [A] is 150 or more, but when it is less than 150, the cured film physical properties as a cured film tend not to be obtained. Moreover, when molecular weight is larger than 10,000, it tends to become difficult to dissolve in a hydrocarbon solvent.

The component [A] is preferably a compound having two or more (meth) acryloyl groups and a molecular weight of 150 or more and 10,000 or less.
In the present invention, the molecular weight of the component [A] indicates a weight average molecular weight measured by gel permeation chromatography.

  In the curable resin composition of the first embodiment of the present invention, a polyfunctional acrylate can be used as the [A] component. Among them, polyfunctional acrylates that can be used together with [C] hydrocarbon solvents and can be dissolved or dispersed are preferred.

  Examples of the polyfunctional acrylate used for the component [A] include ethylene glycol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonanediol di (meth) acrylate, 1, 10-decanediol di (meth) acrylate, 1,12-dodecanediol di (meth) acrylate, tetraethylene glycol di (meth) acrylate, tricyclodecane dimethanol di (meth) acrylate, polyethylene glycol di (meth) acrylate, Polypropylene glycol di (meth) acrylate, bisphenoxyethanol full orange (meth) acrylate, tricyclodecane dimethanol di (meth) acrylate, 2-hydroxy-3- (meth) acryloyloxypropyl methacrylate, Methylolpropane tri (meth) acrylate, propylene oxide modified trimethylolpropane tri (meth) acrylate, pentaerythritol tri (meth) acrylate, pentaerythritol tetra (meth) acrylate, ditrimethylolpropane tetra (meth) acrylate, dipentaerythritol penta ( (Meth) acrylate, dipentaerythritol hexa (meth) acrylate, tri (2- (meth) acryloyloxyethyl) phosphate, ethylene oxide modified dipentaerythritol hexaacrylate, succinic acid modified pentaerythritol triacrylate, linear alkylene group and A compound having an alicyclic structure and having two or more isocyanate groups, one or more hydroxyl groups in the molecule, and 3 to Number of (meth) polyfunctional urethane (meth) acrylate compounds obtained by a compound is reacted with an acryloyloxy group (meth) acrylate compounds, and the like.

As a commercial item of polyfunctional acrylate, for example,
Aronix (registered trademark) M-210, M-220, M-240, M-270, M-305, M-309, M-310, M-315, M-321, M-321 M-400, M-402, M-405, M-408, M-450, M-1310, M-1600, M-1960, M-7100, M-8030, M-80 M-8060, M-8100, M-8530, M-8560, M-8560, M-9050, TO-1450, TO-1382 (above, manufactured by Toagosei Co., Ltd.);
KAYARAD (registered trademark) DPHA, DPCA-20, DPCA-30, DPCA-60, DPCA-120, MAX-3510 (manufactured by Nippon Kayaku Co., Ltd.);
Viscoat (registered trademark) 260, 295, 300, 310HP, 335HP, 360 (above, manufactured by Osaka Organic Chemical Co., Ltd.);
As urethane acrylate compounds,
New Frontier (registered trademark) R-1150 (Daiichi Kogyo Seiyaku Co., Ltd.);
KAYARAD (registered trademark) DPHA-40H, R-526, R-167, R-604, R-684, R-551, R-712, UX-2201, UX-2301, UX-3204, UX-3301, UX-4101, UX-5000, UX-6101, UX-7101, UX-8101, UX-0937, MU-2100, MU-2100, MU-4001 (above) Manufactured by Nippon Kayaku Co., Ltd.)
Art Resin (registered trademark) UN-333, UN-1255, UN-6060PTM, UN-7600, UN-7700, UN-9000PEP, UN-9200A (above, manufactured by Negami Kogyo Co., Ltd.)
Etc.

  In addition, the component [A] is at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), and a compound represented by the following formula (3). Preferably there is.

（式（１）中、Ｘは式（５）で示される２価の基、または炭素数５〜２０の２価の脂環式炭化水素基を示し、式（５）中、ｎは２〜２０の整数を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。
式（２）中、Ｒ^２は水素原子、または炭素数１〜１２のアルキル基を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。Ｗはエチレンオキサイド基またはプロピレンオキサイド基を示し、ｍは０〜４の整数を示す。
式（３）中、Ｒ^３は水素原子、または炭素数１〜１２のアルキル基を示す。Ｙは式（４）で示される基を示し、Ｒ^１は水素原子、またはメチル基を示す。Ｗはエチレンオキサイド基またはプロピレンオキサイド基を示し、ｍは０〜４の整数を示す。）

(In the formula (1), X represents a divalent group represented by the formula (5) or a divalent alicyclic hydrocarbon group having 5 to 20 carbon atoms, and in the formula (5), n represents 2 to 2 It represents an integer of 20. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group.
In formula (2), R ² represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4.
In formula (3), R ³ represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4. )

  Among the compounds represented by formula (1), formula (2), and formula (3) used as the component [A], those having 2 to 4 functional groups having excellent solubility in hydrocarbon solvents are particularly preferably used. For example, 1,9-nonanediol diacrylate, 1,10-decanediol diacrylate, 1,12-dodecanediol diacrylate, tricyclodecane dimethanol diacrylate, propylene oxide modified trimethylolpropane tri Examples include acrylate, ditrimethylolpropane tetraacrylate, propylene oxide-modified ditrimethylolpropane tetraacrylate, and the like.

As a commercial item of the said polyfunctional acrylate, for example,
Aronix (registered trademark) M-310, M-321, M-408 (above, manufactured by Toagosei Co., Ltd.);
NK ester (registered trademark) A-NOD-N, A-DOD-N, A-DCP, A-TMPT-3PO, A-TMPT-6PO, AD-TMP-L, AD-TMP- 4P (Shin Nakamura Chemical Co., Ltd.);
New Frontier (registered trademark) L-C9A and TMP-3P (manufactured by Daiichi Kogyo Seiyaku Co., Ltd.);
Biscoat (registered trademark) 260 (made by Osaka Organic Chemical Industry Co., Ltd.) and the like.

  The above component [A] is contained in the curable resin composition of the first embodiment of the present invention, and is dissolved or dispersed, and forms a layer or a film using a simple forming method such as coating. A liquid resin composition can be formed.

[[B] Semiconductor quantum dots]
[B] The semiconductor quantum dot, which is an essential component of the curable resin composition of the first embodiment of the present invention, does not contain Cd or Pb as a constituent component, and includes, for example, In (indium) or Si (silicon). It is a semiconductor quantum dot made of a safe material, configured as a component.

  [B] The semiconductor quantum dot is at least two elements selected from the group consisting of group 2 element, group 11 element, group 12 element, group 13 element, group 14 element, group 15 element and group 16 element It is preferable that it is a semiconductor quantum dot which consists of a compound containing this.

  More specifically, elements such as Pb and Cd, which are of great concern for human safety, are excluded, and Be (beryllium), Mg (magnesium), Ca (calcium), Sr (strontium), Ba (Barium), Cu (copper), Ag (silver), gold (Au), zinc (Zn), B (boron), Al (aluminum), Ga (gallium), In (indium), Tl (thallium), C (Carbon), Si (silicon), Ge (germanium), Sn (tin), N (nitrogen), P (phosphorus), As (arsenic), Sb (antimony), Bi (bismuth), O (oxygen), S (Sulfur), Se (selenium), Te (tellurium), and a semiconductor quantum dot which consists of a compound containing at least 2 or more types of elements chosen from Po (polonium) group are preferable.

  At this time, it is preferable that the [B] semiconductor quantum dot consists of a compound (a) having a fluorescence maximum in a wavelength region of 500 nm to 600 nm and / or a compound (b) having a fluorescence maximum in a wavelength region of 600 nm to 700 nm.

  [B] The semiconductor quantum dot is composed of the compound (a) and / or the compound (b) having such fluorescence emission characteristics, so that the semiconductor quantum dot has a wavelength region of 500 nm to 600 nm and / or a wavelength region of 600 nm to 700 nm. It can have a fluorescence maximum. As a result, the curable resin composition of the present embodiment containing [B] semiconductor quantum dots forms a cured film suitable for the structure of the light emitting layer of the light emitting element that displays an image using light in the visible range. be able to.

  Furthermore, it is more preferable that the [B] semiconductor quantum dot contained in the curable resin composition of the present embodiment is a semiconductor quantum dot made of a compound containing In as a constituent component. In addition, [B] semiconductor quantum dots may include Si or Si compounds.

  [B] As the semiconductor quantum dot, Si or Si compound is particularly preferable.

  [B] By making the component constitution of the semiconductor quantum dots as described above, the curable resin composition of the present embodiment can form a cured film having a safe and excellent fluorescence property, A wavelength conversion film having a safe and excellent fluorescence characteristic and a light emitting layer of a light emitting element can be formed.

  [B] The semiconductor quantum dots contained in the curable resin composition of the present embodiment are at least one selected from a homogeneous structure type composed of one compound and a core-shell structure type composed of two or more compounds. The structure type semiconductor quantum dot is preferable.

  The core-shell structure type [B] semiconductor quantum dot is formed by forming a core structure with one kind of compound and coating the periphery of the core structure with another compound. For example, by covering the core semiconductor with a semiconductor having a larger band gap, excitons (electron-hole pairs) generated by photoexcitation are confined in the core. As a result, the probability of non-radiative transition on the surface of the quantum dot is reduced, and the quantum yield of light emission and the stability of the fluorescence characteristics of the [B] semiconductor quantum dot are improved.

[B] semiconductor quantum dots contained in the curable resin composition of the present embodiment are InP / ZnS, CuInS ₂ / ZnS, and (ZnS / AgInS ₂ ) solid solution / ZnS and at least one selected from the group consisting of AgInS ₂ and Zn-doped AgInS ₂ which are homogeneous structure type semiconductor quantum dots are preferable.

From the above, the [B] semiconductor quantum dots contained in the curable resin composition of the present embodiment are InP / ZnS compounds, CuInS ₂ / ZnS compounds, AgInS ₂ compounds, (ZnS / AgInS ₂ ) solid solutions / ZnS compounds, It is preferably at least one selected from the group of Zn-doped AgInS ₂ compound and Si compound.

  With the [B] semiconductor quantum dots exemplified above, the curable resin composition of the present embodiment containing the same forms a cured film having safer and more excellent fluorescence characteristics, and more excellent fluorescence. A characteristic wavelength conversion film or a light emitting layer of a light emitting element can be formed.

  In addition, the [B] semiconductor quantum dots contained in the curable resin composition of the present embodiment preferably have an average particle diameter of 0.5 nm to 20 nm, and more preferably 1.0 nm to 10 nm. When the average particle size is less than 0.5 nm, it is difficult to prepare the [B] semiconductor quantum dots, and even if the preparation is completed, the fluorescence characteristics of the [B] semiconductor quantum dots may become unstable. is there. [B] If the average particle size of the semiconductor quantum dots exceeds 20 nm, the quantum confinement effect due to the size of the semiconductor quantum dots may not be obtained, and the desired fluorescence characteristics cannot be obtained, which is not desirable.

  Moreover, the shape of [B] semiconductor quantum dot is not specifically limited, For example, spherical shape, rod shape, disk shape, and other shapes may be sufficient. Information such as the particle size, shape, and dispersion state of the quantum dots can be obtained by a transmission electron microscope (TEM).

  As a method for obtaining [B] semiconductor quantum dots contained in the curable resin composition of the first embodiment of the present invention, a known method of thermally decomposing an organometallic compound in a coordinating organic solvent is used. Can do. For core-shell structure type semiconductor quantum dots, after forming a homogeneous core structure by reaction, a precursor for forming a shell on the core surface is added to the reaction system, and the reaction is stopped after the shell formation. And can be obtained by separating from the solvent. A commercially available product can also be used.

  The content of [B] semiconductor quantum dots in the curable resin composition of the present embodiment is preferably 0.1 parts by mass to 100 parts by mass, and more preferably 100 parts by mass of the above-described [A] component. Is 0.2 part by mass to 50 parts by mass. [B] By setting the content of the semiconductor quantum dots in the above range, a cured film having excellent fluorescence characteristics is formed, and as a result, a wavelength conversion film having excellent fluorescence characteristics and a light emitting layer of a light emitting element are formed. be able to. [B] If the content of the semiconductor quantum dots is less than 0.1 parts by mass with respect to 100 parts by mass of the component [A], the desired fluorescence characteristics cannot be obtained in the formed cured film, and the wavelength The light emitting layer of a conversion film or a light emitting element cannot be formed. Moreover, when there are more than 100 mass parts with respect to 100 mass parts of [A] component, the stability of the cured film formed will be impaired and the stable wavelength conversion film and the light emitting layer of a light emitting element cannot be formed.

[[C] hydrocarbon solvent]
The curable resin composition of the first embodiment of the present invention contains a [C] hydrocarbon solvent. The curable resin composition of this embodiment can form a liquid resin composition by containing [C] a hydrocarbon solvent, while [B] suppresses aggregation of semiconductor quantum dots. [B] A curable resin composition in which semiconductor quantum dots are dispersed can be formed.

  The hydrocarbon solvent represents a solvent composed of only carbon atoms and hydrogen atoms. Examples of the hydrocarbon solvent include aromatic hydrocarbon solvents and aliphatic hydrocarbon solvents. Examples of the aromatic hydrocarbon solvent include toluene, ethylbenzene, amylbenzene, isopropylbenzene, xylene, cyclohexylbenzene, naphthalene, dimethylnaphthalene, cymene, tetralin, biphenyl, mesitylene and the like. Aliphatic hydrocarbon solvents include hexane, heptane, octane, nonane, decane, undecane, dodecane, cyclohexane, methylcyclohexane, ethylcyclohexane, p-menthane, decalin, isooctane, isododecane, cyclohexene, cyclopentane, dipentene, isoper E , Isopar G, Isopar H, Isopar L, Isopar M (manufactured by Kokura Kosan Co., Ltd.), turpentine oil, decahydronaphthalene, pinane, α-pinene, β-pinene, limonene, benzine, Kyowasol C-800, shell sol , Isosol, ligroin (manufactured by Gordo Kogyo Co., Ltd.), and the like.

  Moreover, the curable resin composition of 1st Embodiment of this invention can contain an oxygen atom containing organic solvent with the above-mentioned [C] hydrocarbon type solvent. An oxygen-containing organic solvent is a solvent containing oxygen atoms in the molecule. By containing this oxygen atom-containing organic solvent, the curable resin composition of the present embodiment can further improve the solubility or dispersibility of the [A] component.

  Such oxygen atom-containing organic solvents include ester solvents such as ethyl acetate, ketone solvents such as acetone, methyl ethyl ketone and cyclohexanone, ether solvents such as tetrahydrofuran, dioxane and dialkyl ether, solvents such as dimethyl sulfoxide, dimethylformamide And amide solvents such as N-methylpyrrolidone and N, N-dimethylacetamide.

  [C] When an oxygen atom-containing organic solvent is used by mixing with a hydrocarbon solvent, the oxygen atom-containing organic solvent is contained in an amount of 1% by mass to 50% by mass when the use ratio of the [C] hydrocarbon solvent is 100. It is desirable to use within this range. When the said usage-amount of an oxygen atom containing organic solvent is less than 1 mass%, the addition effect of an oxygen atom containing organic solvent may not fully be acquired. Moreover, when the above-mentioned usage-amount of the organic solvent containing an oxygen atom is more than 50 mass%, there exists a possibility that [B] aggregation of a semiconductor quantum dot may arise.

[[D] Polymerizable initiator]
The curable resin composition of the first embodiment of the present invention can further contain [D] a polymerizable initiator. [D] The polymerizable initiator is a component that generates an active species capable of initiating polymerization of a compound having a polymerizable group such as the component [A] in response to radiation. The curable resin composition of this embodiment can improve radiation sensitivity and patternability by containing [D] polymeric initiator. And the curable resin composition of this embodiment can form the light emitting layer and wavelength conversion film which were patterned easily using well-known patterning methods, such as the photolithographic method.

  In the curable resin composition of the present embodiment, examples of the [D] polymerizable initiator include oxime ester compounds, acetophenone compounds, biimidazole compounds, and the like. In addition, you may use [D] polymeric initiator individually or in combination of 2 or more types.

  Examples of the oxime ester compound include ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), 1,2-octane. Dione-1- [4- (phenylthio) -2- (O-benzoyloxime)], 1- [9-ethyl-6-benzoyl-9H-carbazol-3-yl] -octane-1-oneoxime-O-acetate 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -ethane-1-one oxime-O-benzoate, 1- [9-n-butyl-6- (2- Ethylbenzoyl) -9H-carbazol-3-yl] -ethane-1-one oxime-O-benzoate, ethanone-1- [9-ethyl-6- (2-methyl-4-teto) Hydrofuranylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- (2-methyl-4-tetrahydropyranylbenzoyl) -9H- Carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- (2-methyl-5-tetrahydrofuranylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- {2-methyl-4- (2,2-dimethyl-1,3-dioxolanyl) methoxybenzoyl} -9H-carbazol-3-yl] O-acyloxime compounds such as -1- (O-acetyloxime) and the like can be mentioned.

  Among the oxime ester compounds described above, etanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime), 1,2 -Octanedione-1- [4- (phenylthio) -2- (O-benzoyloxime)], ethanone-1- [9-ethyl-6- (2-methyl-4-tetrahydrofuranylmethoxybenzoyl) -9H-carbazole -3-yl] -1- (O-acetyloxime), ethanone-1- [9-ethyl-6- {2-methyl-4- (2,2-dimethyl-1,3-dioxolanyl) methoxybenzoyl}- 9H-carbazol-3-yl] -1- (O-acetyloxime) is preferred.

  Examples of the acetophenone compound include an α-aminoketone compound and an α-hydroxyketone compound.

  Examples of the α-aminoketone compound include 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one and 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) -butan-1-one, 2-methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one and the like can be mentioned.

  Examples of the α-hydroxyketone compound include 1-phenyl-2-hydroxy-2-methylpropan-1-one, 1- (4-i-propylphenyl) -2-hydroxy-2-methylpropane-1- ON, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1-hydroxycyclohexyl phenylketone and the like.

  The acetophenone compound is preferably an α-aminoketone compound, such as 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl-phenyl) -butan-1-one, 2- More preferred is methyl-1- (4-methylthiophenyl) -2-morpholinopropan-1-one.

  Examples of the biimidazole compound include 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetrakis (4-ethoxycarbonylphenyl) -1,2′-biimidazole, 2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4-dichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4,6-trichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2 ′ -Biimidazole etc. are mentioned. Among these, 2,2′-bis (2-chlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole, 2,2′-bis (2,4-dichlorophenyl) ) -4,4 ', 5,5'-tetraphenyl-1,2'-biimidazole, 2,2'-bis (2,4,6-trichlorophenyl) -4,4', 5,5'- Tetraphenyl-1,2′-biimidazole is preferred, and 2,2′-bis (2,4-dichlorophenyl) -4,4 ′, 5,5′-tetraphenyl-1,2′-biimidazole is more preferred. .

  [D] The content of the polymerizable initiator is preferably 0.1 part by mass to 40 parts by mass, and more preferably 0.5 part by mass to 20 parts by mass with respect to 100 parts by mass of the component [A]. [D] By setting the content of the polymerization initiator in the above range, the curable resin composition of the present embodiment exhibits good patternability even in the case of a low exposure amount, and has sufficient surface hardness and adhesion. A cured film having can be formed.

  Furthermore, the [D] polymerization initiator is preferably a polymerizable initiator containing a hydrocarbon group having 1 to 20 carbon atoms. By using the [D] polymerization initiator having such a structure, the solubility of the [D] polymerization initiator in the [C] hydrocarbon solvent is improved in the curable resin composition of the present embodiment. be able to.

  Examples of the polymerizable initiator containing a hydrocarbon group having 1 to 20 carbon atoms include 2-dimethylamino-2- (4-methylbenzyl) -1- (4-morpholin-4-yl- Phenyl) -butan-1-one (Irgacure (R) 379), 1,2-octanedione-1- [4- (phenylthio) -2- (O-benzoyloxime)] (Irgacure (R) OXE01) Ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) (Irgacure (registered trademark) OXE02) (manufactured by BASF ) And the like.

[[E] Polymer having a carboxyl group and a weight average molecular weight of 5,000 to 40,000]
In the curable resin composition of the present invention, the polymer having a weight average molecular weight of 5000 to 40,000 having an [E] carboxyl group as the [E] component is a compound (e1) and a compound (e2) described later in a solvent. Examples thereof include a co-polymer (hereinafter also referred to as [E1] component) and a carboxyl group-containing elastomer (hereinafter also referred to as [E2] component) that can be produced by radical polymerization in the presence of a polymerization initiator. be able to.

  Among the components [E1], (e1) ethylenically unsaturated carboxylic acid and / or ethylenically unsaturated carboxylic acid anhydride (hereinafter collectively referred to as unsaturated carboxylic acid monomer (e1)). As, for example, monocarboxylic acids such as acrylic acid, methacrylic acid, crotonic acid, 2-methacryloyloxyethyl succinic acid, 2-methacryloyloxyethyl hexahydrophthalic acid; maleic acid, fumaric acid, citraconic acid, mesaconic acid And dicarboxylic acids such as itaconic acid; anhydrides of the above-mentioned dicarboxylic acids.

  Among these unsaturated carboxylic acid-based monomers (e1), copolymerization reactivity, solubility of the resulting polymer in an alkaline aqueous solution and easy availability, acrylic acid, methacrylic acid, maleic anhydride, 2-Methacryloyloxyethyl hexahydrophthalic acid and the like are preferable.

  In the component [E1], the unsaturated carboxylic acid monomer (e1) can be used alone or in admixture of two or more.

  In the component [E1], the content of the repeating unit derived from the unsaturated carboxylic acid monomer (e1) is preferably 5% by weight to 50% by weight, more preferably 10% by weight to 40% by weight, particularly preferably. Is from 15% to 30% by weight. In this case, when the content of the repeating unit derived from the unsaturated carboxylic acid monomer (e1) is less than 5% by weight, the solubility in an alkaline aqueous solution tends to decrease, whereas when it exceeds 40% by weight. There is a possibility that the solubility in an aqueous alkali solution becomes too large.

  Furthermore, (e2) other ethylenically unsaturated compounds (hereinafter simply referred to as (e2) other monomers) include (meth) acrylic acid alkyl esters, (meth) acrylic acid alicyclic esters. And (meth) acrylic acid aryl esters, dicarboxylic acid dialkyl esters, (meth) acrylic acid epoxy alkyl esters; dicarbonylimide derivatives; conjugated diene compounds, vinyl aromatic compounds, and the like.

Among these (e2) other monomers, from the viewpoint of copolymerization reactivity and solubility of the resulting polymer in an alkaline aqueous solution, 2-methylcyclohexyl acrylate, hydroxyethyl methacrylate, tricyclomethacrylate [5. 2.1.0 ^2,6 ] decan-8-yl, styrene, glycidyl methacrylate, 3- (methacryloyloxymethyl) -3-ethyloxetane, tetrahydrofurfuryl methacrylate, 1,3-butadiene, phenylmaleimide, cyclohexyl Maleimide and the like are preferred. (E2) Other monomers can be used alone or in admixture of two or more.

  The component [E1] is a repeating unit derived from (e2) another monomer, preferably 50% by mass to 95% by mass, more preferably 60% by mass to 90% by mass, and particularly preferably 70% by mass to Contains 85% by mass. In this case, when the repeating unit is less than 10% by mass, the storage stability of the [E1] component tends to decrease, whereas when it exceeds 70% by mass, the [E1] component is hardly dissolved in the alkaline aqueous solution.

  As described above, the [E1] component used in the present invention has a carboxyl group and / or a carboxylic anhydride group and another ethylenically unsaturated compound, and has an appropriate solubility in an alkaline aqueous solution. And can be easily cured by heating without using a special curing agent.

  [E1] Examples of the solvent used for the production of the component include alcohol, ether, glycol ether, ethylene glycol alkyl ether acetate, diethylene glycol, dipropylene glycol, propylene glycol monoalkyl ether, propylene glycol alkyl ether acetate, propylene glycol alkyl ether. Examples include propionates, aromatic hydrocarbons, ketones and esters.

  Of these, ethylene glycol alkyl ether acetate, diethylene glycol, dipropylene glycol, propylene glycol monoalkyl ether, and propylene glycol alkyl ether acetate are preferable. Among them, diethylene glycol dimethyl ether, diethylene glycol ethyl methyl ether, dipropylene glycol dimethyl ether, dipropylene glycol ethyl Particularly preferred are methyl ether, propylene glycol methyl ether, propylene glycol methyl ether acetate, and 3-methoxybutyl acetate.

  The said solvent can be used individually or in mixture of 2 or more types.

  The radical polymerization initiator used for the polymerization is not particularly limited, and examples thereof include 2,2′-azobisisobutyronitrile, 2,2′-azobis- (2,4-dimethylvalero). Nitrile), 2,2′-azobis- (4-methoxy-2,4-dimethylvaleronitrile), 4,4′-azobis (4-cyanovaleric acid), dimethyl 2,2′-azobis (2-methylpro) Azo compounds), 2,2′-azobis (4-methoxy-2,4-dimethylvaleronitrile); benzoyl peroxide, lauroyl peroxide, t-butylperoxypivalate, 1,1-bis (t-butyl) Organic peroxides such as peroxy) cyclohexane; hydrogen peroxide and the like. Moreover, when using a peroxide as a radical polymerization initiator, it is good also as a redox type initiator combining it and a reducing agent.

  These radical polymerization initiators can be used alone or in admixture of two or more.

  In addition, a (meth) acryloyloxy group can be introduced into the polymer by reacting a carboxyl group in the [E1] component with a (meth) acrylic acid ester having an epoxy group.

  In the reaction between a carboxyl group in the polymer and an unsaturated compound such as a (meth) acrylic acid ester having an epoxy group, a polymer containing a polymerization inhibitor, preferably in the presence of a suitable catalyst as necessary. An unsaturated compound having an epoxy group is added to the solution and stirred for a predetermined time under heating. Examples of the catalyst include tetrabutylammonium bromide. Examples of the polymerization inhibitor include p-methoxyphenol. The reaction temperature is preferably 70 ° C to 100 ° C. The reaction time is preferably 8 hours to 12 hours.

  The content of the structural unit having a (meth) acryloyloxy group is preferably 10 mol% to 70 mol%, more preferably 20 mol% to 50 mol%, of all the components of the [E1] component.

  When content of the structural unit which has a (meth) acryloyloxy group is less than 10 mol%, it exists in the tendency for the sensitivity to the radiation of a curable resin composition to fall, and the heat resistance of the cured film obtained is also not enough. On the other hand, when the content is more than 70 mol%, it causes development failure at the time of development, and development residue tends to occur.

  Examples of the [E2] component in the curable resin composition of the present invention include carboxyl group-containing elastomers.

  As the carboxyl group-containing elastomer used as the component [E2], for example, carboxyl group-containing polyisoprene (trade names “LIR (registered trademark) -410”, “UC-102”, “UC-203”, manufactured by Kuraray Co., Ltd.), Maleic anhydride modified EEA resin (manufactured by Nippon Paper Industries Co., Ltd., trade name “Aurolen (registered trademark) 350S”), maleic anhydride modified SEBS resin (manufactured by Asahi Kasei Chemicals Corporation, trade name “Tuftec (registered trademark) M-1943” "), Ethylene-methacrylic acid copolymer resin (Mitsui DuPont Polychemical Co., Ltd., trade name" Nucrel (registered trademark) ") and the like.

  Among the carboxyl group-containing elastomers used as the [E2] component, in particular, a carboxyl group-containing polyisoprene (trade names “LIR (registered trademark) -410”, “UC-102”, “UC-203”, manufactured by Kuraray Co., Ltd.) is available. From the viewpoint of dispersion stability of quantum dots, among them, “UC-102” is particularly preferable from the viewpoint of patterning.

  In the above [E] component, the polystyrene equivalent weight average molecular weight (hereinafter referred to as “Mw”) by gel permeation chromatography (GPC) is usually 5000 to 40000, preferably 5000 to 20000. In this case, if Mw is less than 5000, the developability and remaining film rate of the resulting film may be reduced, and the pattern shape, heat resistance, and the like may be impaired. On the other hand, if Mw exceeds 20000, the resolution may be lowered or the pattern shape may be impaired.

  As content of [E] component, 20 mass parts-200 mass parts are preferable with respect to 100 mass parts of [A] component, and 40 mass parts-150 mass parts are more preferable. By setting the content of the polymer in the above range, the curable resin composition of the present embodiment can form a cured film having excellent adhesion and sufficient surface hardness even at a low exposure amount.

[Other optional ingredients]
The curable resin composition of the first embodiment of the present invention includes [A] a compound having two or more polymerizable groups in one molecule and a molecular weight of 150 to 10,000, [B] a semiconductor quantum dot, and [C It contains a hydrocarbon solvent as an essential component and can contain other optional components as long as the effects of the present invention are not impaired. Examples of other optional components include a curing accelerator and a thermal acid generator.

  The curing accelerator is a compound that functions to promote curing of a film formed by the curable resin composition of the present embodiment.

  The thermal acid generator is a compound capable of releasing an acidic active substance that acts as a catalyst when the resin is cured by applying heat.

  Furthermore, the curable resin composition of the present embodiment is within a range that does not impair the effects of the present invention, and other optional components such as a surfactant, a storage stabilizer, an adhesion aid, and a heat resistance improver, if necessary. Can be contained. Each of these optional components may be used alone or in combination of two or more.

[Method for preparing curable resin composition]
The curable resin composition according to the first embodiment of the present invention includes: [A] a compound having two or more polymerizable groups in one molecule and a molecular weight (weight average molecular weight) of 150 to 10,000, [B] a semiconductor quantum dot And [C] a hydrocarbon solvent is mixed uniformly. When the [D] component and the [E] component are contained, the [D] component and the [E] component are mixed together with the [A] component, the [B] component, and the [C] component. The

  Furthermore, when other optional components are selected as necessary and contained, they are prepared by uniformly mixing the components [A], [B] and [C] and other optional components. . The curable resin composition of the present embodiment contains a [C] hydrocarbon solvent, and if necessary, also contains an oxygen atom-containing organic solvent, and other components are dissolved, preferably in the form of a solution. Used in

  [C] The contents of the hydrocarbon solvent and the oxygen atom-containing organic solvent (hereinafter also simply referred to as a solvent component) used when necessary are not particularly limited. However, from the viewpoints of solubility of other components of the resulting curable resin composition, applicability and stability of the curable resin composition, etc., the total concentration of each component excluding the solvent component of the curable resin composition However, the quantity used as 2 mass%-50 mass% is preferable, and the quantity used as 5 mass%-40 mass% is more preferable. When preparing a solution of the curable resin composition, in practice, in the above-mentioned concentration range, the solid content concentration (components other than the solvent component occupying the curable resin composition solution) according to the desired film thickness value, etc. ) Is set.

  The solution-like curable resin composition of the present embodiment thus prepared can be used for forming the cured film of the present embodiment after being filtered using a Millipore filter having a pore diameter of about 0.5 μm. preferable.

Embodiment 2. FIG.
<Curing film>
The cured film of the second embodiment of the present invention is formed by applying the above-described curable resin composition of the first embodiment of the present invention on a substrate, patterning if necessary, and then heat curing. The Below, the cured film of this embodiment and its formation method are demonstrated.

  In the method for forming a cured film of this embodiment, it is preferable that at least the following steps (1) to (4) are included in the following order so that the cured film is formed on the substrate.

(1) The coating film formation process which forms the coating film of the curable resin composition of 1st Embodiment of this invention on a board | substrate.
(2) A radiation irradiation step of irradiating at least part of the coating film formed in step (1) with radiation.
(3) A development step of developing the coating film irradiated with radiation in step (2).
(4) A curing step of exposing the coating film developed in step (3).

  1 to 4 are diagrams illustrating a method for forming a cured film according to the second embodiment of the present invention.

  FIG. 1 is a cross-sectional view of a substrate for explaining a coating film forming step in forming a cured film according to a second embodiment of the present invention.

  FIG. 2 is a cross-sectional view schematically illustrating a radiation irradiation step in forming a cured film according to the second embodiment of the present invention.

  FIG. 3 is a cross-sectional view of a substrate for explaining a development process in forming a cured film according to the second embodiment of the present invention.

  FIG. 4 is a cross-sectional view of a cured film and a substrate for explaining a curing process in forming a cured film according to the second embodiment of the present invention.

  Hereinafter, the above-mentioned process (1) (coating film forming process) to process (4) (curing process) will be described.

[Step (1)]
In the coating film forming process which is the process (1) of the cured film forming method of the present embodiment, the coating film 1 of the curable resin composition of the first embodiment of the present invention is applied on the substrate 2 as shown in FIG. To form.

  The substrate 2 on which the coating film 1 is formed has glass, quartz, silicon, or resin (for example, polyimide, polyethylene naphthalate, polyethylene terephthalate, polybutylene terephthalate, polyethersulfone, polycarbonate, polyester, cyclic olefin ring opening weight) For example, a substrate made of a coalescence and hydrogenated product thereof may be used. In addition, these substrates may be subjected to pretreatment such as chemical treatment with a silane coupling agent, plasma treatment, ion plating, sputtering, gas phase reaction method, vacuum deposition or the like, if desired.

  In the substrate 2, after the curable resin composition of the present embodiment is applied to one surface, prebaking is performed, components such as a solvent contained in the curable resin composition are evaporated, and the coating film 1 is formed. Is done.

  Examples of the coating method of the curable resin composition in this step include a spray method, a roll coating method, a spin coating method (sometimes called a spin coating method or a spinner method), a slit coating method (slit die coating). Method), a bar coating method, an ink jet coating method, and the like. Of these, the spin coating method or the slit coating method is preferable because a film having a uniform thickness can be formed.

  The pre-baking conditions described above vary depending on the type of each component constituting the curable resin composition, the blending ratio, etc., but it is preferably performed at a temperature of 70 ° C. to 120 ° C., and the time is heated by a hot plate, oven, or the like. Although it varies depending on the apparatus, it is about 1 minute to 15 minutes.

[Step (2)]
Next, in the radiation irradiation process which is the process (2) of the method for forming a cured film of the present embodiment, as shown in FIG. 2, at least a part of the coating film 1 formed on the substrate 2 in the process (1) is applied. Radiation 4 is irradiated. At this time, in order to irradiate only a part of the coating film 1 with the radiation 4a, for example, it is performed through the photomask 3 having a pattern corresponding to formation of a desired shape. By using this photomask 3, a part of the irradiated radiation 4 passes through the photomask, and a part of the radiation 4 a is irradiated onto the coating film 1.

  Examples of the radiation 4 used for irradiation include visible light, ultraviolet light, and far ultraviolet light. Of these, radiation having a wavelength in the range of 200 nm to 550 nm is preferable, and radiation including ultraviolet light of 365 nm is more preferable.

The dose of radiation 4 (exposure amount), the intensity at the wavelength 365nm radiation 4 as a value measured by a luminometer (OAI model 356, Optical Associates Ltd. ^Inc.), be 10J / ^{m 2} ~10000J / m 2 can be ^{preferably 100J / m 2 ~5000J / m 2} , 200J / m 2 ~3000J / m 2 is more preferable.

[Step (3)]
Next, in the development step which is step (3) of the method for forming a cured film of this embodiment, as shown in FIG. 3, the coating film 1 of FIG. 2 after irradiation is developed to remove unnecessary portions. The coating film 1a patterned into a predetermined shape is obtained.

  Examples of the developer used for development include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia, and tetramethylammonium hydroxide and tetraethylammonium hydroxide. Aqueous solutions of alkaline compounds such as quaternary ammonium salts, choline, 1,8-diazabicyclo- [5.4.0] -7-undecene, 1,5-diazabicyclo- [4.3.0] -5-nonene Can be used. An appropriate amount of a water-soluble organic solvent such as methanol or ethanol can be added to the aqueous solution of the alkaline compound described above. Furthermore, the surfactant can be used alone or in combination with the addition of the above-mentioned water-soluble organic solvent.

  The developing method may be any of a liquid filling method, a dipping method, a shower method, a spraying method, etc., and the developing time can be 5 seconds to 300 seconds at room temperature, preferably 10 seconds to 180 seconds at room temperature. is there. Subsequent to the development processing, for example, washing with running water is performed for 30 seconds to 90 seconds, and then a desired pattern is obtained by air drying with compressed air or compressed nitrogen.

[Step (4)]
Next, in the curing step which is the step (4) of the method for forming a cured film of the present embodiment, the patterned coating film 1a shown in FIG. 3 is cured by exposure using an exposure apparatus (also referred to as post-exposure). ) Thereby, as shown in FIG. 4, the cured film 5 of this embodiment formed on the board | substrate 2 is obtained. As described above, the cured film 5 is patterned so as to have a desired shape.

  In forming the cured film 5 of this embodiment, the curable resin composition of the first embodiment described above is used, and in this step, a part of the coating film is irradiated with radiation. Specifically, the coating film formed in step (1) and patterned in step (2) and step (3) is irradiated with predetermined radiation. Examples of the radiation used at this time include ultraviolet rays, far ultraviolet rays, X-rays, and charged particle beams.

Examples of the ultraviolet rays include g-line (wavelength 436 nm), i-line (wavelength 365 nm), and the like. Examples of the far ultraviolet light include KrF excimer laser light. Examples of X-rays include synchrotron radiation. Examples of the charged particle beam include an electron beam. Of these radiations, the use of ultraviolet rays is preferable, and among the ultraviolet rays, radiation containing at least one of g-line, h-line and i-line is more preferable. The exposure dose of radiation is preferably 0.1 J / m ^{2 to} 30000 J / m ² .

  The cured film of this embodiment formed by the cured film forming method including the above steps (1) to (4) is configured to include [B] semiconductor quantum dots in the resin, and [B] semiconductor quantum. Fluorescence emission (wavelength conversion) function based on dots. Therefore, it can be used as a wavelength conversion film that emits fluorescence having a wavelength different from that of excitation light. Therefore, the wavelength conversion film of the embodiment of the present invention can be formed using the curable resin composition of the first embodiment of the present invention according to the cured film forming method of the second embodiment described above. And the wavelength conversion film of this embodiment has the fluorescence light emission (wavelength conversion) function based on [B] semiconductor quantum dot.

Moreover, it is also possible to provide a light emitting element using the cured film of this embodiment as a light emitting layer. In that case, the light emitting layer of the light emitting device of the embodiment of the present invention is similarly formed using the curable resin composition of the first embodiment of the present invention and according to the cured film forming method of the present embodiment described above. Can do. And the light emitting layer of the light emitting element of this embodiment has the fluorescence emission (wavelength conversion) function based on [B] semiconductor quantum dot.
In particular, the cured film of this embodiment is suitable for use as a light-emitting layer of a light-emitting display element that is an example of a light-emitting element, as described later, and can be used for the configuration of a light-emitting display element.

  Therefore, the cured film has a total light transmittance (JIS K7105) at a thickness of 0.1 mm, preferably 75% to 95%, in the resin constituting the cured film so that the light utilization efficiency can be increased. More preferably, it is 78%-95%, More preferably, it is 80%-95%. When the total light transmittance is within such a range, the obtained cured film can constitute a wavelength conversion film having excellent light utilization efficiency and a light emitting layer of a light emitting element.

Embodiment 3 FIG.
<Light-emitting display element and light-emitting layer thereof>
In this invention, light emitting elements, such as an illuminating device and a light emitting display element, can be provided by using as a wavelength conversion film or a light emitting layer using the cured film of 2nd Embodiment of this invention mentioned above.

  The light emitting display element which is 3rd Embodiment of this invention is an example of the light emitting element of this invention. The light emitting display element which is 3rd Embodiment of this invention is comprised using the wavelength conversion board | substrate which uses the cured film of 2nd Embodiment of this invention mentioned above as a light emitting layer.

  FIG. 5 is a cross-sectional view schematically showing a light-emitting display element according to an embodiment of the present invention.

  The light emitting display device 100 according to the first embodiment of the present invention includes a wavelength conversion substrate 11 configured by providing a light emitting layer 13 (13a, 13b, 13c) and a black matrix 14 on a substrate 12, and a wavelength conversion substrate 11. And a light source substrate 18 bonded through an adhesive layer 15.

  The substrate 12 is made of glass, quartz, or a transparent resin (for example, transparent polyimide, polyethylene naphthalate, polyethylene terephthalate, polyester film, cyclic olefin resin film, etc.).

  The light emitting layer 13 of the wavelength conversion substrate 11 is formed by using the cured film of the second embodiment of the present invention described above. That is, the light emitting layer 13 is formed by patterning using the curable resin composition of the first embodiment of the present invention described above.

About the formation method of a light emitting layer, since they are formed using the cured film of 2nd Embodiment of this invention, it becomes the same as the formation method of 2nd Embodiment of this invention mentioned above.
That is, the cured film of the second embodiment of the present invention is formed on the substrate 12, and these serve as the light emitting layer 13 to constitute the wavelength conversion substrate 11 of the light emitting display element 100. Therefore, the method for forming the light emitting layer 13 preferably includes the following steps (1) to (4) similar to those described above in this order.

(1) The coating film formation process which forms the coating film of the curable resin composition of 1st Embodiment of this invention on a board | substrate.
(2) A radiation irradiation step of irradiating at least part of the coating film formed in step (1) with radiation.
(3) A development step of developing the coating film irradiated with radiation in step (2).
(4) A curing step of exposing the coating film developed in step (3).

  And each of (1) process-(4) process for forming the light emitting layer 13 is as having demonstrated using FIGS. 1-4 in formation of the cured film of 2nd Embodiment of this invention. . Therefore, although the details are omitted, the cured film 5 patterned so as to have a desired shape shown in FIG. 4 becomes the light emitting layer 13 of the wavelength conversion substrate 11 of FIG.

  In the wavelength conversion substrate 11, each of the light emitting layers 13 uses semiconductor quantum dots contained therein, converts the wavelength of excitation light from the excitation light source 17 of the light source substrate 18, and emits fluorescence having a desired wavelength.

  In the wavelength conversion substrate 11, the light emitting layer 13a, the light emitting layer 13b, and the light emitting layer 13c of the light emitting layer 13 are configured to include different semiconductor quantum dots, and can emit different fluorescence.

  For example, in the wavelength conversion substrate 11, the light emitting layer 13a converts excitation light into red light, the light emitting layer 13b converts excitation light into green light, and the light emitting layer 13c converts excitation light into blue light. Can be configured.

  In that case, the semiconductor quantum dots to be contained are selected so that each of the light emitting layers 13a, 13b, and 13c has desired fluorescence characteristics. Therefore, in the formation of the light emitting layers 13a, 13b, and 13c of the wavelength conversion substrate 11, for example, three kinds of curable resin compositions of the first embodiment including semiconductor quantum dots having different light emission characteristics are prepared.

  And the formation method of the light emitting layer 13 containing the process (1)-process (4) mentioned above using each of the 3 types of curable resin compositions of 1st Embodiment is repeated, and the light emitting layer 13a, the light emitting layer 13b and the light emitting layer 13c are sequentially formed. Then, the light emitting layer 13 is formed on the substrate 12 to obtain the wavelength conversion substrate 11.

  The thickness of the light emitting layer 13 of the wavelength conversion substrate 11 is preferably about 100 nm to 100 μm, and more preferably 1 μm to 100 μm. If the thickness is less than 100 nm, the excitation light cannot be sufficiently absorbed, and the light conversion efficiency is lowered, so that the luminance of the light emitting display element cannot be sufficiently secured. Furthermore, in order to enhance absorption of excitation light and sufficiently secure the luminance of the light emitting display element, the film thickness is preferably 1 μm or more.

  A black matrix 14 is disposed between the light emitting layers 13 on the substrate 12. The black matrix 14 can be formed by using a known light-shielding material and patterning it according to a known method. Note that the black matrix 14 is not an essential component in the wavelength conversion substrate 11, and the wavelength conversion substrate 11 may be configured without the black matrix 14.

  The adhesive layer 15 is formed using a known adhesive that transmits ultraviolet light or blue light having a wavelength described later. As shown in FIG. 5, the adhesive layer 15 does not have to be provided on the substrate 12 so as to cover the entire surface of the light emitting layers 13a, 13b, 13c, and can be provided only around the wavelength conversion substrate 11. It is.

  The light source substrate 18 includes a substrate 16 and a light source 17 disposed on the wavelength conversion substrate 11 side of the substrate 16. Each of the light sources 17 emits ultraviolet light or blue light as excitation light.

  As the light source 17, an ultraviolet light-emitting organic EL element and a blue light-emitting organic EL element having a known structure can be used. The light source 17 is not particularly limited, and can be manufactured using a known material or a known manufacturing method. It is. Here, as the ultraviolet light, light emission having a main emission peak of 360 nm to 435 nm is preferable, and as the blue light, light emission having a main emission peak of 435 nm to 480 nm is preferable. The light source 17 desirably has directivity so that each emitted light irradiates the light emitting layer 13 facing each other.

  The light emitting display element 100 of this embodiment converts the wavelength of excitation light from the light source 17a, which is one of the light sources 17, by the semiconductor quantum dots of the light emitting layer 13a of the opposing wavelength conversion substrate 11. Similarly, the wavelength of excitation light from the light source 17b is converted by the semiconductor quantum dots of the light emitting layer 13b of the opposing wavelength conversion substrate 11, and the light emission layer 13c of the wavelength conversion substrate 11 of the opposing wavelength conversion substrate 11 is converted. Wavelength conversion is performed by using semiconductor quantum dots. In this way, the excitation light from the light source 17 is converted into visible light having a desired wavelength and used for display.

  In the wavelength conversion substrate 11, the excitation light is converted into blue light in the light emitting layer 13c, as will be described later. At this time, instead of the light emitting layer 13c, the wavelength conversion substrate 11 can use a light scattering layer configured by dispersing light scattering particles in a resin. By doing so, when the excitation light is blue light, the excitation light can be used as it is without converting the wavelength.

  As described above, the wavelength conversion substrate 11 of the light-emitting display element 100 is provided with the light-emitting layer 13a, the light-emitting layer 13b, and the light-emitting layer 13c made of semiconductor quantum dots and resin, respectively, patterned on the substrate 12. Is. The light emitting layers 13a, 13b, and 13c are each formed from the curable resin composition of the first embodiment including semiconductor quantum dots.

  In the light emitting display element 100, the portion where the light emitting layer 13a is provided constitutes a sub-pixel that performs red display. That is, the light emitting layer 13 a of the wavelength conversion substrate 11 converts the excitation light from the light source 17 a facing the light source substrate 18 into red. Further, the portion where the light emitting layer 13b is provided constitutes a sub-pixel that performs green display. That is, the light emitting layer 13b converts the excitation light from the light source 17b facing the light source substrate 18 to green. Further, the portion where the light emitting layer 13c is provided constitutes a sub-pixel that performs blue display. That is, the light emitting layer 13c converts the excitation light from the light source 17c facing the light source substrate 18 into blue.

  The light-emitting display element 100 includes one pixel that is a minimum unit constituting an image by three types of a sub-pixel including the light-emitting layer 13a, a sub-pixel including the light-emitting layer 13b, and a sub-pixel including the light-emitting layer 13c. Configure.

  The light-emitting display element 100 of the present embodiment having the above-described configuration has red, green, or blue color for each of the sub-pixel including the light-emitting layer 13a, the sub-pixel including the light-emitting layer 13b, and the sub-pixel including the light-emitting layer 13c. Light emission is controlled. Then, the emission of red, green, and blue light is controlled for each pixel composed of three types of sub-pixels, and a full color display is performed.

  In the light emitting display element 100 according to the embodiment of the present invention, a color filter can be provided between the light emitting layer 13 and the substrate 12. That is, a red color filter is provided between the light emitting layer 13a and the substrate 12, a green color filter is provided between the light emitting layer 13b and the substrate 12, and a red color filter is provided between the light emitting layer 13c and the substrate 12. Can be provided.

  The light emitting display element 100 according to the third embodiment of the present invention can increase the purity of display color by providing a color filter. Here, as a color filter, what is known for liquid crystal display elements etc. can be formed and used by a well-known method.

  EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example, this invention is not limited to these Examples at all.

<[B] Semiconductor Quantum Dot ([B] Component)>
The semiconductor quantum dots used in this example are shown below.
Semiconductor quantum dot A: InP / ZnS core-shell quantum dot semiconductor quantum dot B: InCuS ₂ / ZnS core-shell quantum dot semiconductor quantum dot C: Si quantum dot

The semiconductor quantum dots A: InP / ZnS core-shell quantum dots, semiconductor quantum dots B: InCuS ₂ / ZnS core-shell quantum dots, and semiconductor quantum dots C: Si quantum dots used in the following examples are generally known. It can be synthesized by the method.

For example, regarding the semiconductor quantum dot A: InP / ZnS core-shell type quantum dot, the technical literature “Journal of American Chemical Society. 2007, 129, 15432-15433” and the semiconductor quantum dot B: InCuS ₂ / ZnS core-shell type quantum dot In the technical document “Journal of American Chemical Society. 2009, 131, 5691-5697” and the technical document “Chemistry of Materials. 2009, 21, 2422-2429”, regarding the semiconductor quantum dot C: American Chemical Society. 2010, 132, 248-253 ”. It can be synthesized with reference to the method.

  Along with the above [B] semiconductor quantum dots, [A] a compound ([A] component) having a weight average molecular weight of 150 or more and 10,000 or less having two or more polymerizable groups in one molecule, and [C] a hydrocarbon solvent. ([C] component), [D] a polymerizable initiator ([D] component), and [E] a polymer having a carboxyl group and having a weight average molecular weight of 5000 to 40000 ([E] component). The curable resin composition of an Example was prepared using a certain above-mentioned [E1] component and [E2] component. Subsequently, the cured film of an Example was formed using it and the evaluation was performed.

<Synthesis Example of [E1] Component>
A flask equipped with a condenser and a stirrer was charged with 150 parts by mass of propylene glycol monomethyl ether acetate and purged with nitrogen. Heat to 80 ° C., and at the same temperature, 50 parts by mass of propylene glycol monomethyl ether acetate, 20 parts by mass of methacrylic acid, 5 parts by mass of benzyl methacrylate, 10 parts by mass of styrene, 13 parts by mass of 2-hydroxyethyl methacrylate, 2-ethylhexyl methacrylate A mixed solution of 40 parts by mass, 12 parts by mass of N-phenylmaleimide and 6 parts by mass of 2,2′-azobis (2,4-dimethylvaleronitrile) was added dropwise over 2 hours, and this temperature was maintained for 1 hour for polymerization. did. Thereafter, the temperature of the reaction solution was raised to 90 ° C., and further polymerized for 1 hour to obtain a resin solution (solid content concentration = 33% by mass). The obtained resin was Mw = 11100, Mn = 6000, Mw / Mn = 1.85. This is designated as a carboxyl group-containing resin solution (E-1).

Example 1
[Preparation of Curable Resin Composition (β-I)]
[E2] A solution containing a carboxyl group-containing polyisoprene (trade name “UC-102”, manufactured by Kuraray Co., Ltd.) as the component, an amount corresponding to 30 parts by mass (solid content) of the polymer, and a component [D] 1,2-octanedione-1- [4- (phenylthio) -2- (O-benzoyloxime)] (BASF Corporation Irgacure (registered trademark) OXE01) 10 parts by mass, [A] component 1,9-nonane 70 parts by mass of diol diacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., NK ester (registered trademark) A-NOD-N) was dissolved in p-menthane as the [C] component, and semiconductor quantum dots as the [B] component 10 parts by mass of A was mixed to prepare a curable resin composition (β-I).

Example 2
[Preparation of Curable Resin Composition (β-II)]
[E2] 20 parts by mass of a carboxyl group-containing polyisoprene (trade name “UC-203”, manufactured by Kuraray Co., Ltd.) as a component, and 1,2-octanedione-1- [4- (phenylthio)-as a [D] component 2- (O-benzoyloxime)] (BASF Irgacure (registered trademark) OXE01) 10 parts by mass, 1,10-decanediol diacrylate (Shin Nakamura Chemical Co., Ltd., NK ester (registered trademark) as [A] component ) A-DOD-N) 80 parts by mass is mixed, dissolved in Pinan as the [C] component, and 10 parts by mass of the semiconductor quantum dots A as the [B] component are mixed to obtain a curable resin composition (β-II). ) Was prepared.

Example 3
[Preparation of Curable Resin Composition (β-III)]
[E2] 30 parts by mass of a carboxyl group-containing polyisoprene (trade name “UC-102”, manufactured by Kuraray Co., Ltd.) as a component, and 2-dimethylamino-2- (4-methylbenzyl) -1- as a [D] component 10 mass of (4-morpholin-4-yl-phenyl) -butan-1-one (Irgacure (registered trademark) 379 manufactured by BASF), 1,9-nonanediol diacrylate (Shin Nakamura Chemical Co., Ltd.) as component [A] NK ester (registered trademark) A-NOD-N) 50 parts by mass, propylene oxide modified trimethylolpropane triacrylate 20 parts by mass (Aronix (registered trademark) M-321 manufactured by Toagosei Co., Ltd.) C] as a component, dissolved in decane, and mixed with 10 parts by mass of semiconductor quantum dots C as a component [B] Things the (beta-III) were prepared.

Example 4
[Preparation of Curable Resin Composition (β-IV)]
[E2] 40 parts by mass of a carboxyl group-containing polyisoprene (trade name “UC-102” manufactured by Kuraray Co., Ltd.) as a component, and 1,2-octanedione-1- [4- (phenylthio)-as a [D] component 2- (O-benzoyloxime)] (Irgacure (registered trademark) OXE01, manufactured by BASF) 10 parts by mass, ethanone-1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) (BASF Irgacure (registered trademark) OXE02) 5 parts by mass, 1,9-nonanediol diacrylate (Shin Nakamura Chemical Co., Ltd., NK ester (registered trademark) as [A] component ) A-NOD-N) 60 parts by mass are mixed and dissolved in Pinan as the [C] component, and 10 semiconductor quantum dots B are added as the [B] component. Mixed amount unit, curable resin composition (beta-IV) was prepared.

Example 5
[Preparation of Curable Resin Composition (β-V)]
After adding 40 parts by mass of p-menthane as the [C] component to 90 parts by mass of the carboxyl group-containing resin solution (E-1) as the [E1] component and dissolving it, 10 parts of the semiconductor quantum dot A is used as the [B] component. Partly mixed to prepare a uniform solution, and as [D] component 2-methyl-1- [4- (methylthio) phenyl] -2-morpholinopropan-1-one (Irgacure (registered trademark) 907 manufactured by BASF) ) 5 parts by mass, 1,2-octanedione-1- [4- (phenylthio) -2- (O-benzoyloxime)] (BASF company Irgacure (registered trademark) OXE01), 5 parts by mass, [A] component 20 parts by mass of tricyclodecane dimethanol diacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., NK ester (registered trademark) A-DCP), ditrimethylolpropane tetraacrylate Rate (Toagosei Co., Ltd. Aronix (registered trademark) M-408) were mixed with 10 parts by weight, a cured resin composition (beta-V) was prepared.

Example 6
[Formation of cured film using curable resin composition (β-I)]
A curable resin composition (β-I) prepared in Example 1 was applied onto an alkali-free glass substrate with a spinner, and then prebaked on an 80 ° C. hot plate for 2 minutes to form a coating film.
Next, radiation was applied to the obtained coating film through a photomask having a predetermined pattern at an exposure amount of 700 J / m ² using a high pressure mercury lamp. Next, development was performed at 23 ° C. for 80 seconds with a 0.04 mass% potassium hydroxide aqueous solution.
Next, the obtained pattern was irradiated with radiation at an exposure amount of 10000 J / m ² using a high-pressure mercury lamp to form a cured film patterned into a predetermined shape.

Next, the edge part of the patterned cured film was observed with an optical microscope, and it was judged that the patterning property was good when there was no development residue and the linear part of the pattern was linearly formed.
As a result, the patterning property of the cured film formed by patterning using the curable resin composition (β-I) was good.

Example 7
[Formation of cured film using curable resin composition (β-II)]
The curable resin composition (β-II) prepared in Example 2 was applied on an alkali-free glass substrate with a spinner, and then pre-baked on an 80 ° C. hot plate for 2 minutes to form a coating film.
Next, the obtained coating film was irradiated with radiation at an exposure amount of 1000 J / m ² using a high pressure mercury lamp through a photomask having a predetermined pattern, and a 0.04 mass% potassium hydroxide aqueous solution was used. Development was performed at 23 ° C. for 80 seconds.
Next, the obtained pattern was irradiated with radiation at an exposure amount of 10000 J / m ² using a high-pressure mercury lamp to form a cured film patterned into a predetermined shape.

Next, the edge part of the patterned cured film was observed with an optical microscope, and it was judged that the patterning property was good when there was no development residue and the linear part of the pattern was linearly formed.
As a result, the patterning property of the cured film formed by patterning using the curable resin composition (β-II) was good.

Example 8
[Formation of cured film using curable resin composition (β-III)]
The curable resin composition (β-III) prepared in Example 3 was applied onto an alkali-free glass substrate with a spinner, and then pre-baked on an 80 ° C. hot plate for 2 minutes to form a coating film.
Next, the obtained coating film was irradiated with radiation at an exposure amount of 800 J / m ² using a high pressure mercury lamp through a photomask having a predetermined pattern, and a 0.04 mass% potassium hydroxide aqueous solution was used. Development was performed at 23 ° C. for 80 seconds.
Next, the obtained pattern was irradiated with radiation at an exposure amount of 10000 J / m ² using a high-pressure mercury lamp to form a cured film patterned into a predetermined shape.

Next, the edge part of the patterned cured film was observed with an optical microscope, and it was judged that the patterning property was good when there was no development residue and the linear part of the pattern was linearly formed.
As a result, the patterning property of the cured film formed by patterning using the curable resin composition (β-III) was good.

Example 9
[Formation of cured film using curable resin composition (β-IV)]
The curable resin composition (β-IV) prepared in Example 3 was applied onto an alkali-free glass substrate with a spinner, and then prebaked on an 80 ° C. hot plate for 2 minutes to form a coating film.
Next, the obtained coating film was irradiated with radiation at an exposure amount of 800 J / m ² using a high pressure mercury lamp through a photomask having a predetermined pattern, and a 0.04 mass% potassium hydroxide aqueous solution was used. Development was performed at 23 ° C. for 80 seconds.
Next, the obtained pattern was irradiated with radiation at an exposure amount of 10000 J / m ² using a high-pressure mercury lamp to form a cured film patterned into a predetermined shape.

Next, the edge part of the patterned cured film was observed with an optical microscope, and it was judged that the patterning property was good when there was no development residue and the linear part of the pattern was linearly formed.
As a result, the patterning property of the cured film formed by patterning using the curable resin composition (β-IV) was good.

Example 10
[Formation of cured film using curable resin composition (β-V)]
The curable resin composition (β-V) prepared in Example 3 was applied on an alkali-free glass substrate with a spinner, and then prebaked on an 80 ° C. hot plate for 2 minutes to form a coating film.
Next, the obtained coating film was irradiated with radiation at an exposure amount of 800 J / m ² using a high pressure mercury lamp through a photomask having a predetermined pattern, and a 0.04 mass% potassium hydroxide aqueous solution was used. Development was performed at 23 ° C. for 80 seconds.
Next, the obtained pattern was irradiated with radiation at an exposure amount of 10000 J / m ² using a high-pressure mercury lamp to form a cured film patterned into a predetermined shape.

Next, the edge part of the patterned cured film was observed with an optical microscope, and it was judged that the patterning property was good when there was no development residue and the linear part of the pattern was linearly formed.
As a result, the patterning property of the cured film formed by patterning using the curable resin composition (β-V) was good.

Example 11
[Evaluation of curing shrinkage]
The cured film obtained by the formation method of Example 6 was further subjected to an exposure treatment of 10,000 J / m ² , and the film thickness before and after this exposure was measured with a stylus type film thickness measuring machine (Alphastep IQ, KLA Tencor). And the remaining film rate (film thickness after a process / film thickness before a process x100) was computed, and this remaining film rate was made into hardening shrinkage. The residual film ratio was 99%, and the curing shrinkage was judged to be good.

Similarly, the cured film obtained by the formation method of Example 7 was further subjected to an exposure treatment of 10,000 J / m ² , and the film thickness before and after this exposure was measured with a stylus type film thickness measuring device (Alphastep IQ, KLA Tencor). did. And the remaining film rate (film thickness after a process / film thickness before a process x100) was computed, and this remaining film rate was made into hardening shrinkage. The residual film ratio was 99%, and the curing shrinkage was judged to be good.

Similarly, the cured film obtained by the formation method of Example 8 was further subjected to an exposure treatment of 10,000 J / m ² , and the film thickness before and after the exposure was measured with a stylus type film thickness measuring machine (Alphastep IQ, KLA Tencor). did. And the remaining film rate (film thickness after a process / film thickness before a process x100) was computed, and this remaining film rate was made into hardening shrinkage. The residual film ratio was 99%, and the curing shrinkage was judged to be good.

Similarly, the cured film obtained by the formation method of Example 9 was further subjected to an exposure treatment of 10,000 J / m ² , and the film thickness before and after this exposure was measured with a stylus type film thickness measuring machine (Alphastep IQ, KLA Tencor). did. And the remaining film rate (film thickness after a process / film thickness before a process x100) was computed, and this remaining film rate was made into hardening shrinkage. The residual film ratio was 99%, and the curing shrinkage was judged to be good.

Similarly, the cured film obtained by the formation method of Example 10 was further subjected to an exposure treatment of 10,000 J / m ² , and the film thickness before and after this exposure was measured with a stylus type film thickness measuring device (Alphastep IQ, KLA Tencor). did. And the remaining film rate (film thickness after a process / film thickness before a process x100) was computed, and this remaining film rate was made into hardening shrinkage. The residual film ratio was 99%, and the curing shrinkage was judged to be good.

Example 12
[Evaluation of light resistance]
The cured film obtained by the forming method of Example 6 was further irradiated with 80000 J / m ² of ultraviolet light at an illuminance of 130 mW using a UV irradiation apparatus (UVX-02516S1JS01, Ushio), and the film reduction amount after irradiation I investigated. The amount of film loss was 2% or less, and light resistance was judged to be good.

Similarly, the cured film obtained by the formation method of Example 7 was further irradiated with UV light of 800000 J / m ² at an illuminance of 130 mW using a UV irradiation apparatus (UVX-02516S1JS01, Ushio Inc.). The amount of film loss was examined. The amount of film loss was 2% or less, and light resistance was judged to be good.

Similarly, the cured film obtained by the formation method of Example 8 was further irradiated with UV light of 800000 J / m ² at an illuminance of 130 mW using a UV irradiation apparatus (UVX-02516S1JS01, Ushio Inc.). The amount of film loss was examined. The amount of film loss was 2% or less, and light resistance was judged to be good.

Similarly, the cured film formed by the formation method of Example 9 was further irradiated with UV light of 800000 J / m ² at an illuminance of 130 mW using a UV irradiation apparatus (UVX-02516S1JS01, Ushio Inc.). The amount of film loss was examined. The amount of film loss was 2% or less, and light resistance was judged to be good.

Similarly, the cured film obtained by the formation method of Example 10 was further irradiated with 80000 J / m ² of ultraviolet light at an illuminance of 130 mW using a UV irradiation apparatus (UVX-02516S1JS01, Ushio Inc.). The amount of film loss was examined. The amount of film loss was 2% or less, and light resistance was judged to be good.

Example 13
[Evaluation of fluorescence characteristics]
With respect to the cured film formed by the formation method of Example 6, the fluorescence quantum yield at 25 ° C. was further examined using an absolute PL quantum yield measuring apparatus (C11347-01, Hamamatsu Photonics). The fluorescence quantum yield was 37%, and the fluorescence characteristics were judged to be good.

  Similarly, about the cured film by the formation method of Example 7, the fluorescence quantum yield in 25 degreeC was further investigated using the absolute PL quantum yield measuring apparatus (C11347-01, Hamamatsu Photonics). The fluorescence quantum yield was 39%, and the fluorescence characteristics were judged to be good.

  Similarly, the fluorescence quantum yield at 25 ° C. of the cured film obtained by the formation method of Example 8 was further examined using an absolute PL quantum yield measuring apparatus (C11347-01, Hamamatsu Photonics). The fluorescence quantum yield was 38%, and the fluorescence characteristics were judged to be good.

  Similarly, the fluorescence quantum yield at 25 ° C. of the cured film obtained by the formation method of Example 9 was further examined using an absolute PL quantum yield measuring apparatus (C11347-01, Hamamatsu Photonics). The fluorescence quantum yield was 35%, and the fluorescence characteristics were judged to be good.

  Similarly, the fluorescence quantum yield at 25 ° C. of the cured film obtained by the formation method of Example 10 was further examined using an absolute PL quantum yield measuring apparatus (C11347-01, Hamamatsu Photonics). The fluorescence quantum yield was 36%, and the fluorescence characteristics were judged to be good.

  The cured film formed using the curable resin composition of the present invention is excellent in reliability such as light resistance and is easy to pattern, and as a wavelength conversion layer or wavelength conversion film, a display element or the like is used. In addition to the conventional electronic devices, the present invention can be used in the field of LEDs and solar cells.

1, 1a Coating 2, 12, 16 Substrate 3 Photomask 4, 4a Radiation 5 Cured film 11 Wavelength conversion substrate 13, 13a, 13b, 13c Light emitting layer 14 Black matrix 15 Adhesive layer 17, 17a, 17b, 17c Light source 18 Light source substrate 100 Light emitting display element

Claims (13)

[A] a compound having a molecular weight of 150 or more and 10,000 or less having two or more polymerizable groups in one molecule;
[B] A curable resin composition comprising a semiconductor quantum dot and [C] a hydrocarbon solvent.   The curable resin composition according to claim 1, further comprising an oxygen atom-containing organic solvent.   Furthermore, [D] polymeric initiator is contained, The curable resin composition of Claim 1 or 2 characterized by the above-mentioned.   [D] The curable resin composition according to claim 3, wherein the polymerizable initiator is a polymerizable initiator containing a hydrocarbon group having 1 to 20 carbon atoms.   Furthermore, the polymer of the weight average molecular weight which has [E] carboxyl group is 5000 or more and 40000 or less, The curable resin composition of any one of Claims 1-4 characterized by the above-mentioned.   [B] From a compound in which the semiconductor quantum dot includes at least two elements selected from the group consisting of a group 2 element, a group 11 element, a group 12 element, a group 13 element, a group 14 element, a group 15 element, and a group 16 element The curable resin composition according to any one of claims 1 to 5, wherein   [B] The curable resin composition according to any one of claims 1 to 6, wherein the semiconductor quantum dots are composed of a compound containing In as a constituent component. [B] The semiconductor quantum dot is at least one selected from the group consisting of an InP / ZnS compound, a CuInS ₂ / ZnS compound, an AgInS ₂ compound, a (ZnS / AgInS ₂ ) solid solution / ZnS compound, a Zn-doped AgInS ₂ compound, and a Si compound. It is a seed | species, The curable resin composition of any one of Claims 1-7 characterized by the above-mentioned. The [A] compound is at least one compound selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula (2), and a compound represented by the following formula (3). The curable resin composition according to claim 1, wherein the curable resin composition is any one of the above.

(In the formula (1), X represents a divalent group represented by the formula (5) or a divalent alicyclic hydrocarbon group having 5 to 20 carbon atoms, and in the formula (5), n represents 2 to 2 It represents an integer of 20. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group.
In formula (2), R ² represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4.
In formula (3), R ³ represents a hydrogen atom or an alkyl group having 1 to 12 carbon atoms. Y represents a group represented by the formula (4), and R ¹ represents a hydrogen atom or a methyl group. W represents an ethylene oxide group or a propylene oxide group, and m represents an integer of 0 to 4. )   A cured film formed using the curable resin composition according to claim 1.   It has a light emitting layer formed using the curable resin composition of any one of Claims 1-9, The light emitting element characterized by the above-mentioned.   A wavelength conversion film formed using the curable resin composition according to any one of claims 1 to 9. A method for forming a light emitting layer of a light emitting device, comprising:
(1) The process of forming the coating film of the curable resin composition of any one of Claims 1-9 on a board | substrate,
(2) A step of irradiating at least a part of the coating film formed in step (1),
(3) A step of developing the coating film irradiated with radiation in step (2), and (4) a step of exposing the coating film developed in step (3). .

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