JP2015010236A - Semiconductor-manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor-manufacturing apparatus capable of more improving homogeneous heating of a wafer and suppressing temperature drop of the wafer.SOLUTION: A semiconductor-manufacturing apparatus 100 comprises: a soaking member 20 including at least a first region 20A, a second region 20B and a third region 20C. The first region 20A, the second region 20B and the third region 20C are separated by concentric circles having a reference at the center of the soaking member 20. In the first region 20A, a ratio occupied by first through holes 21A is 35% to 55%. In the second region 20B, a ratio occupied by second through holes 21B is 80% or more.

Description

  The present invention relates to a semiconductor manufacturing apparatus including a soaking member between a heater and a wafer.

  2. Description of the Related Art Conventionally, there has been proposed a semiconductor manufacturing apparatus that suppresses an event in which a heater pattern is transferred to a wafer by arranging a soaking member between the heater and the wafer. Further, the temperature of the wafer is equalized by partially changing the distance between the heat equalizing member and the heater.

Japanese Patent Laid-Open No. 11-100664

  However, even if the above-described heat equalizing member is employed, the temperature equalization of the wafer is insufficient, and it is necessary to further improve the temperature equalization of the wafer. Further, since the heat radiated from the heater is shielded by the soaking member, the temperature of the wafer is lowered.

  Therefore, the present invention has been made to solve the above-described problems, and provides a semiconductor manufacturing apparatus that can further improve the temperature uniformity of a wafer and suppress a decrease in the temperature of the wafer. Aim.

  The semiconductor manufacturing apparatus according to the first embodiment includes a plate-shaped heat equalizing member between the heater and the wafer. The diameter of the soaking member is larger than the diameter of the wafer. The soaking member includes a first region including a center of the soaking member, a second region disposed outside the first region in a radial direction of the soaking member, and a radial direction of the soaking member. And at least a third region disposed outside the second region. The first region, the second region, and the third region are separated by concentric circles with the center of the heat equalizing member as a reference. The first region is provided with a first through hole penetrating the heat equalizing member from the heater side to the wafer side. The second region is provided with a second through hole penetrating the heat equalizing member from the heater side to the wafer side. The third region is not provided with a through hole penetrating the heat equalizing member from the heater side to the wafer side. The ratio of the first through holes in the first region is not less than 35% and not more than 55%. The ratio of the second through holes in the second region is 80% or more.

  In the first feature, the diameter of the soaking member is 1.2 times or more and 1.5 times or less of the diameter of the wafer. The diameter of the first region is 1 to 1.1 times the diameter of the wafer. The diameter of the second region is not less than 1.1 times and not more than 1.3 times the diameter of the wafer. The diameter of the third region is not less than 1.2 times and not more than 1.5 times the diameter of the wafer.

  1st characteristic WHEREIN: The thickness of the said heat equalization member is 1.0 mm or more and 5.0 mm or less.

  1st characteristic WHEREIN: The thermal conductivity of the said heat equalization member is 180 W / mk or more and 230 W / mk or less.

  1st characteristic WHEREIN: The radiation rate of the said heat equalization member is 0.8-0.9.

  According to the present invention, it is possible to provide a semiconductor manufacturing apparatus that can further improve soaking of a wafer and suppress a temperature drop of the wafer.

FIG. 1 is a diagram illustrating a semiconductor device 100 according to the first embodiment. FIG. 2 is a view showing the heat equalizing member 20 according to the first embodiment. FIG. 3 is a diagram for explaining the evaluation results.

  Hereinafter, a semiconductor manufacturing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals.

  However, it should be noted that the drawings are schematic and ratios of dimensions and the like are different from actual ones. Therefore, specific dimensions and the like should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

[Outline of Embodiment]
The semiconductor manufacturing apparatus according to the embodiment includes a plate-shaped heat equalizing member between the heater and the wafer. The diameter of the soaking member is larger than the diameter of the wafer. The soaking member includes a first region including a center of the soaking member, a second region disposed outside the first region in a radial direction of the soaking member, and a radial direction of the soaking member. And at least a third region disposed outside the second region. The first region, the second region, and the third region are separated by concentric circles with the center of the heat equalizing member as a reference. The first region is provided with a first through hole penetrating the heat equalizing member from the heater side to the wafer side. The second region is provided with a second through hole penetrating the heat equalizing member from the heater side to the wafer side. The third region is not provided with a through hole penetrating the heat equalizing member from the heater side to the wafer side. The ratio of the first through holes in the first region is not less than 35% and not more than 55%. The ratio of the second through holes in the second region is 80% or more.

  In the embodiment, since the ratio of the first through holes in the first region is 35% or more, the temperature decrease of the wafer due to the shielding of the soaking member is suppressed. Since the ratio of the first through holes in the first region is 55% or less, the thermal uniformity of the wafer is not hindered. On the other hand, since the ratio of the second through holes in the second region is 80% or more, the temperature decrease of the wafer due to the shielding of the soaking member is suppressed.

[First Embodiment]
(Configuration of semiconductor manufacturing equipment)
The semiconductor manufacturing apparatus according to the first embodiment will be described below with reference to the drawings. FIG. 1 is a diagram illustrating a semiconductor device 100 according to the first embodiment.

  As shown in FIG. 1, the semiconductor device 100 includes a heater 10 and a soaking member 20. The semiconductor device 100 heats the wafer 200 disposed on the opposite side of the heater 10 with the soaking member 20 interposed therebetween.

  The heater 10 is a heat source that heats the wafer 200. The heater 10 is not particularly limited, but is constituted by a heating wire having a predetermined pattern.

  The heat equalizing member 20 is a member that uniformly transmits heat radiated from the heater 10 to the wafer 200. The soaking member 20 has a plate shape. The soaking | uniform-heating member 20 is a member by which the base material comprised with a carbon material was coated with SiC (silicon carbide) material, for example.

  In 1st Embodiment, it is preferable that the thickness of the soaking | uniform-heating member 20 is 1.0 mm or more and 5.0 mm or less. The thermal conductivity of the soaking member 20 is preferably 180 W / mk or more and 230 W / mk or less. The emissivity of the soaking member 20 is preferably 0.8 or more and 0.9 or less.

(Configuration of soaking member)
Hereinafter, the heat equalizing member according to the first embodiment will be described with reference to the drawings. FIG. 2 is a view showing the heat equalizing member 20 according to the first embodiment. FIG. 2 is a view showing a main surface of the heat equalizing member 20 (a surface parallel to the main surface of the wafer 200).

  As shown in FIG. 2, the heat equalizing member 20 has a circular shape (disc shape). The heat equalizing member 20 includes at least a first region 20A, a second region 20B, and a third region 20C. The first region 20 </ b> A, the second region 20 </ b> B, and the third region 20 </ b> C are separated by concentric circles with the center of the heat equalizing member 20 as a reference.

  The first region 20 </ b> A is a region including the center of the soaking member 20. The first region 20A is provided with a first through hole 21A that penetrates the heat equalizing member 20 from the heater 10 side to the wafer 200 side. A plurality of first through holes 21A are preferably provided in the first region 20A. The plurality of first through holes 21A are preferably provided at equal intervals over the entire surface of the first region 20A.

  The ratio of the first through hole 21A in the first region 20A is not less than 35% and not more than 55%. Since the ratio of the first through holes 21A in the first region 20A is 35% or more, the temperature decrease of the wafer 200 due to the shielding of the heat equalizing member 20 is suppressed. Since the ratio of the first through holes 21A in the first region 20A is 55% or less, the thermal uniformity of the wafer 200 is not hindered.

  The shape and size of the first through hole 21A are not particularly limited, but the shape of the first through hole 21A may be circular, and the size of the first through hole 21A may be φ4 mm or more and φ6 mm or less. When the size of the first through hole 21A is φ4 mm or more, the temperature drop of the wafer 200 due to the shielding of the heat equalizing member 20 is suppressed. When the size of the first through hole 21A is φ6 mm or less, the thermal uniformity of the wafer 200 is not hindered.

  The second region 20 </ b> B is a region disposed outside the first region 20 </ b> A in the radial direction of the heat equalizing member 20. In the second region 20B, a second through hole 21B that penetrates the heat equalizing member 20 from the heater 10 side to the wafer 200 side is provided. A plurality of second through holes 21B are preferably provided in the second region 20B. The plurality of second through holes 21 </ b> B preferably have a shape along a concentric circle with the center of the heat equalizing member 20 as a reference.

  The ratio of the second through hole 21B in the second region 20B is 80% or more. Since the ratio of the second through holes 21B in the second region 20B is 80% or more, the temperature drop of the wafer 200 due to the shielding of the heat equalizing member 20 is suppressed.

  The shape and size of the second through hole 21B are not particularly limited. The size of the second through hole 21B is preferably larger than the size of the first through hole 21A.

  The third region 20 </ b> C is a region that is disposed outside the second region 20 </ b> B in the radial direction of the heat equalizing member 20. The third region 20C is not provided with a through hole penetrating the heat equalizing member 20 from the heater 10 side to the wafer 200 side. Thereby, it is easy to provide a column or the like for supporting the heat equalizing member 20 in the third region 20C.

  In the first embodiment, the soaking member 20 has a diameter larger than the diameter of the wafer 200. Specifically, the diameter of the soaking member 20 is preferably 1.2 to 1.5 times the diameter of the wafer 200.

  When the diameter of the heat equalizing member 20 is 1.2 times or more the diameter of the wafer 200, the first region 20A, the second region 20B, and the third region 20C can be provided in appropriate ranges. When the diameter of the soaking member 20 is 1.5 times or less than the diameter of the wafer 200, the size of the soaking member 20 does not become too large.

  In the first embodiment, the diameter of the first region 20 </ b> A is preferably 1 to 1.1 times the diameter of the wafer 200. In other words, the first region 20 </ b> A is provided in a range corresponding to the wafer 200 at a position corresponding to the wafer 200.

  Since the diameter of the first region 20 </ b> A is one or more times the diameter of the wafer 200, the ratio of the second through-holes 21 </ b> B is large on the projection surface of the main surface of the heat equalizing member 20 (main surface of the wafer 200). Since the second region 20B is located outside the wafer 200, the thermal uniformity of the wafer 200 is not hindered. On the other hand, when the diameter of the first region 20A is 1.1 times or less than the diameter of the wafer 200, the heat radiated from the heater 10 easily flows from the second region 20B, and the temperature drop of the wafer 200 is suppressed. .

  The diameter of the second region 20 </ b> B is preferably 1.1 to 1.3 times the diameter of the wafer 200. Since the diameter of the second region 20B is 1.1 times or more, the second region 20B does not overlap the wafer 200 on the projection surface of the main surface of the heat equalizing member 20 (the main surface of the wafer 200). The soaking property of 200 is not inhibited. When the diameter of the second region 20B is 1.3 times or less, the size of the soaking member 20 does not become too large.

  The diameter of the third region 20 </ b> C is preferably 1.2 times or more and 1.5 times or less than the diameter of the wafer 200. Thereby, the size of the soaking member 20 does not become too large. The diameter of the third region 20C is the same as the diameter of the heat equalizing member 20.

(Function and effect)
In the first embodiment, since the ratio of the first through holes 21A in the first region 20A is 35% or more, the temperature decrease of the wafer 200 due to the shielding of the heat equalizing member 20 is suppressed. Since the ratio of the first through holes 21A in the first region 20A is 55% or less, the thermal uniformity of the wafer 200 is not hindered. On the other hand, since the ratio of the second through holes 21B in the second region 20B is 80% or more, the temperature decrease of the wafer 200 due to the shielding of the heat equalizing member 20 is suppressed.

[Evaluation results]
Hereinafter, the evaluation results will be described. Specifically, a soaking member having no through hole was prepared as the soaking member according to the comparative example. As a soaking member according to the example, a soaking member having a through hole (see FIG. 2) was prepared. Here, the size of the soaking member is φ300 mm. In the heat equalizing member according to the example, the ratio of the through hole in the region (first region) of less than φ200 mm is 50%, and the ratio of the through hole in the region (second region) of φ200 mm or more and less than φ250 mm is 100%. The ratio of the through holes in the region (third region) of φ250 mm or more is 0%.

  The temperature of the wafer, the temperature uniformity of the wafer, the loss temperature, and the temperature of the temperature uniformity member were measured using the temperature uniformity member according to the comparative example and the example. Such a measurement result is as shown in FIG. The heater temperature conditions are also as shown in FIG. The heater temperature (IN) is a heater temperature inside a concentric circle with respect to the center of the heater on the projection surface of the main surface of the heat equalizing member 20 (the main surface of the wafer 200). The heater temperature (OUT) is a heater temperature outside the concentric circle with respect to the center of the heater on the projection surface of the main surface of the heat equalizing member 20 (the main surface of the wafer 200).

  As shown in FIG. 3, in the example, it was confirmed that the loss temperature was smaller than that in the comparative example, and that the wafer temperature increased when the heater temperature was substantially constant. Moreover, in the Example, since the 2nd area | region where the ratio which a through-hole occupies is large was provided, even if heater temperature (OUT) was low compared with the comparative example, it was confirmed that soaking | uniform-heating property improves.

[Other Embodiments]
Although the present invention has been described with reference to the above-described embodiments, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

  DESCRIPTION OF SYMBOLS 10 ... Heater, 20 ... Soaking | uniform-heating member, 20A ... 1st area | region, 20B ... 2nd area | region, 20C ... 3rd area | region, 21A ... 1st through-hole, 21B ... 2nd through-hole, 100 ... Semiconductor device, 200 ... Wafer

Claims (5)

A semiconductor manufacturing apparatus including a plate-shaped heat equalizing member between a heater and a wafer,
The soaking member has a diameter larger than the diameter of the wafer,
The soaking member includes a first region including a center of the soaking member, a second region disposed outside the first region in a radial direction of the soaking member, and a radial direction of the soaking member. And at least a third region disposed outside the second region,
The first region, the second region, and the third region are separated by concentric circles based on the center of the heat equalizing member,
The first region is provided with a first through hole penetrating the heat equalizing member from the heater side to the wafer side,
In the second region, a second through hole penetrating the heat equalizing member from the heater side to the wafer side is provided,
The third region is not provided with a through hole that penetrates the heat equalizing member from the heater side to the wafer side,
The proportion of the first through hole in the first region is 35% or more and 55% or less,
The ratio of the second through holes in the second region is 80% or more. The soaking member has a diameter of 1.2 to 1.5 times the diameter of the wafer,
The diameter of the first region is 1 to 1.1 times the diameter of the wafer,
The diameter of the second region is not less than 1.1 times and not more than 1.3 times the diameter of the wafer,
2. The semiconductor manufacturing apparatus according to claim 1, wherein the diameter of the third region is not less than 1.2 times and not more than 1.5 times the diameter of the wafer.   The semiconductor manufacturing apparatus according to claim 1, wherein a thickness of the soaking member is 1.0 mm or greater and 5.0 mm or less.   2. The semiconductor manufacturing apparatus according to claim 1, wherein the thermal conductivity of the soaking member is 180 W / mk or more and 230 W / mk or less.   The semiconductor manufacturing apparatus according to claim 1, wherein an emissivity of the soaking member is 0.8 or more and 0.9 or less.

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