JP2015008257A - High frequency device, and method of manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a high frequency device in which, even if a radio wave absorbent includes a ferrous oxide such as ferrite, the radio wave absorbent is joined to a lid body with high joint strength without application of a metal film or metallization and out gas is prevented from being generated even if heated at about 400°C in a seam-welding step of a post step.SOLUTION: There is disclosed a method of manufacturing a high frequency device in which, after a paste containing organic material-coated Ag particles having micro sizes and a solvent is printed on a lid body, and a radio wave absorbent having a surface roughness Ra of 0.5 μm to 10 μm is arranged on the printed paste so that the surface having the surface roughness and the paste come into contact with each other, tapping operation for applying impact to a direction to the lid body from the radio wave absorbent at a speed of 0.1 m/second to 1 m/second is performed three times or more.

Description

  The present invention relates to a high-frequency device and a method for manufacturing the same.

  Usually, in a high-frequency device, a rectangular parallelepiped lid made of metal, ceramics, or the like is attached to a substrate to protect a semiconductor element, a transmission line, or the like mounted therein. Therefore, since a rectangular parallelepiped cavity is formed inside the high frequency device, the high frequency device has the same properties as a rectangular cavity resonator. Therefore, since cavity resonance occurs in a frequency band higher than the cutoff frequency determined by the cavity size, when mounting a high-frequency semiconductor element or other circuit element operating in this frequency band in a high-frequency circuit package, By making it smaller, the cut-off frequency is made sufficiently higher than the frequency band in which the element operates. However, this method has a problem that, as the operating frequency of the element increases, the frequency at which the cavity resonance occurs is lower than the frequency band in which the element operates. In recent years, in order to solve this problem, a method of suppressing cavity resonance by mounting an electromagnetic wave absorber inside a high-frequency device and absorbing electric field energy or magnetic field energy at the time of cavity resonance has been adopted. ing.

  For example, in Patent Document 1, a metallized layer is formed on one side of a sintered radio wave absorber, and this metallized layer is brazed to the inner surface of a metal lid of a microwave integrated circuit package. There has been proposed a method of suppressing reflection resonance of microwaves generated in a package for a wave integrated circuit.

Further, in Patent Document 2, at least the surface of a radio wave absorber composed of a metal or ceramic base having a metal film formed on the surface and a sintered body containing Fe ₂ O ₃ as a main component and NiO in the remaining part. A package lid for a high-frequency circuit has been proposed in which a metal film formed on a part thereof is fastened using a brazing material having a melting point of 100 ° C. to 400 ° C. In Patent Document 2, for this brazing material, an alloy of two or more kinds of metals such as Sn, Zn, Au, Bi, Cu, Pb, In, and Ag may be used, but wettability with a metal film. In addition, it is described that it is preferable to use an alloy such as Au—Sn, Sn—Pb, Sn—Ag—Cu, Sn—Bi—Ag, and In—Sn in consideration of the melting point temperature. Patent Document 2 uses metals such as Au, Ag, Al, Sn, Zn, Pd, Cu, Ni, and Fe, and alloys containing these, considering the wettability with the brazing material for the metal film material. However, it is described that one layer or two or more layers may be used. In Patent Document 2, Au is preferable as the metal film because of its high chemical stability. However, since the wettability with solder and the reliability of sealing bonding are particularly high, the surface layer is Au, It is described that the underlayer is preferably Ni, and that a Cr layer is preferably provided between them for the purpose of improving the adhesion between the Ni layer and the radio wave absorber.

  In addition, in Patent Document 3, a composite metal nanoparticle having an organic coating layer formed around a metal core, a metal nanofiller particle, and a composite nanometal paste containing the metal filler particle are used for joining an electromagnetic wave absorber or the like. It has been shown to be applicable.

Japanese Utility Model Publication No. 2-33035 JP 2005-72156 A JP 2011-21255 A

  In the manufacturing process of the high frequency device, it is necessary to first join the radio wave absorber to the lid with a brazing material or the like, and in the subsequent process, it is necessary to join the lid on which the radio wave absorber is mounted to the substrate in a highly airtight manner. As a joining method at this time, seam welding is generally used from the viewpoint of mass productivity, and the temperature of the lid body is 300 ° C to 400 ° C. Therefore, the bonding material for the radio wave absorber to the lid needs to have a heat resistance of 400 ° C. or higher. In addition, since the inside of the high-frequency device is hermetically sealed, if outgas is generated from the inside after joining, there is a concern that the semiconductor element may be corroded or deteriorated. In order to enhance the competitiveness of the product, it is desirable that the tact time is as small as possible and the cost is low.

  In Patent Document 1, since the metallized layer is formed on one side (bonding surface) of the radio wave absorber and brazed, a process for forming the metallized layer is required, which increases the manufacturing cost and the tact time.

In Patent Document 2, a metal film is formed on a radio wave absorber as in Patent Document 1, and a specific material and configuration of the metal film are shown. However, even if Cr is added, the radio wave absorber Is a chemically stable oxide such as Fe ₂ O ₃ or NiO, so that the adhesion strength of the metal film is limited. If the initial adhesion strength of the metal film is low, it may be peeled off by brazing or seam welding in a later process. In Patent Document 2, a specific example of a brazing material is given. The eutectic point of Au—Sn (Au-20Sn) is about 280 ° C., and the eutectic point of Sn—Pb (Sn-38Pb) is 183 ° C. Sn-Ag-Cu eutectic point (Sn-3Ag-0.5Cu) is about 220 ° C, Sn-Bi-Ag (Sn-57Bi-1Ag) is about 140 ° C, and In-Sn eutectic point (In -49Sn) has a melting point of not more than 300 ° C. at 120 ° C., and has insufficient heat resistance. Examples of the brazing material having a melting point of 400 ° C. or higher include Zn (melting point: 420 ° C.), but Zn is easily oxidized and difficult to join with a normal halogen-free flux. When a halogen-containing flux is used, bonding with a Zn brazing material is possible. However, since halogen is highly corrosive and generally contains F, there is a concern that the radio wave absorber may be deteriorated. Moreover, when a flux is used, a residue remains and a cleaning process is required, so that the tact time is increased. If a vacuum furnace or a hydrogen reduction furnace is used without using a flux, joining can be done without flux, but a large-scale device is required, and in the case of a hydrogen reduction furnace, hydrogen gas is also required, so the production cost is low. Get higher.

  In patent document 3, since it joins at the temperature of 300 degrees C or less by using a composite nano metal paste, and becomes a bulk body of metal after joining, it has the same heat resistance as the melting point of metal (melting point of 960 degrees C. for Ag). However, details are not shown about the joining method to an electromagnetic wave absorber. The bonding mechanism of this composite nanometal paste is that the organic coating layer of the composite metal nanoparticles and the solvent are volatilized by heating, the metal surface of the nanoparticles is generated, and the nano-sized particles are aggregated and bonded to form a metal. A bulk body is formed at the junction. At this time, if the bonding process is not optimized, the organic coating layer and the solvent may remain, and outgassing may occur due to reheating after bonding. Electromagnetic absorbers generally use iron-based oxides such as ferrite, and what kind of joints can be used to join such chemically stable oxide surfaces with high joint strength. It is not clear how to join by mechanism.

  Therefore, the present invention has been made to solve the above-described problems, and even a radio wave absorber containing an iron-based oxide such as ferrite without applying a metal film or metallization. An object of the present invention is to provide a method of manufacturing a high-frequency device that does not generate outgas even when bonded to a lid with high bonding strength and heated to about 400 ° C. in a subsequent seam welding process.

  In the present invention, a paste containing micro-sized organic coated Ag particles and a solvent is printed on a lid, and a radio wave absorber having a surface roughness Ra of 0.5 μm to 10 μm is formed on the surface of the printed paste. After arranging the surface having roughness and the paste in contact with each other, a tapping operation for applying an impact at a speed of 0.1 m / sec to 1 m / sec from the radio wave absorber toward the lid is performed three times or more. This is a method for manufacturing a high-frequency device.

  According to the present invention, even a radio wave absorber containing an iron-based oxide such as ferrite is joined to the lid body with a high joint strength without applying a metal film or metallization, and the seam welding in the subsequent process A method of manufacturing a high-frequency device that does not generate outgas even when heated to about 400 ° C. in the process can be provided.

5 is a diagram showing a manufacturing process of the high-frequency device according to Embodiment 1. FIG. 3 is a schematic cross-sectional view of a radio wave absorber that can be used in Embodiment 1. FIG. It is a cross-sectional observation result of the sample produced by the Example and the comparative example. It is a cross-sectional observation result of the sample produced by the Example and the comparative example.

Embodiment 1 FIG.
In the method for manufacturing a high-frequency device according to the first embodiment of the present invention, a paste containing micro-sized organic-coated Ag particles and a solvent is printed on a lid, and a surface of 0.5 μm to 10 μm is printed on the printed paste. A wave absorber having a roughness Ra is disposed so that the surface having the surface roughness and the paste are in contact with each other, and then a velocity of 0.1 m / sec to 1 m / sec from the wave absorber to the lid body. And tapping operation for applying an impact is performed three times or more.

FIG. 1 is a diagram illustrating a manufacturing process of the high-frequency device according to the first embodiment. As shown in FIG. 1A, a paste 3 containing micro-sized organic-coated Ag particles 1 and a solvent 2 is printed on a lid 4. The micro-sized organic-coated Ag particles 1 used here have an average particle size of micro-size, such as oleic acid, abietic acid, diethyl hexane, stearic acid, and organic compounds containing an alcoholic hydroxyl group having 4 or more carbon atoms. Any Ag particles coated with an organic component may be used. The organic coated Ag particles 1 are monodispersed without being aggregated in the solvent 2 because the organic coating is formed on the particle surface. The average particle diameter of the organic coated Ag particles 1 is preferably 0.1 μm to 5 μm, more preferably 0.3 μm to 3 μm. In the present invention, the average particle diameter of the organic-coated Ag particles 1 is a value measured by a laser diffraction / scattering method, and an apparatus used for this measurement is, for example, a Microtrac particle size distribution measuring apparatus manufactured by Nikkiso Co., Ltd. MT3300 is mentioned. Examples of the solvent 2 include alcohols such as propanol, benzene, acetone, toluene, xylene, ether, petroleum ether, and the like. The viscosity of the paste 3 is preferably 10 Pa · s to 200 Pa · s from the viewpoint that the organic coated Ag particles 1 can be easily moved in the paste 3 by a tapping operation described later. Further, a viscosity imparting agent may be added to the paste 3. Examples of the viscosity-imparting agent include turpentine oil, terpineol, methylcellulose, ethylcellulose, butyral, terpene derivatives, isobornylcyclohexanol (IBCH), glycerin, and alcohols having 14 or more carbon atoms that are solid at room temperature. Examples of terpene derivatives include 1,8-terpine monoacetate and 1,8-terpine diacetate.
The paste 3 containing such micro-sized organic-coated Ag particles 1 and the solvent 2 may be a commercially available one. For example, MAX101, MAX102 manufactured by Nippon Data Material Co., Ltd., Kaken Tech Co., Ltd. For example, CM-3212 manufactured by the company is available.
As the cover body 4, what is used in the said technical field can be used without a restriction | limiting, For example, what consists of alloys, such as Kovar, can be used.
Although the printing method of the paste 3 is not specifically limited, For example, screen printing and a dispenser are mentioned. The thickness of the paste to be printed is preferably 20 μm to 200 μm from the viewpoints of sinterability and outgas removal during sintering.

Next, as shown in FIG. 1B, the radio wave absorber 5 is disposed on the printed paste 3. Here, the radio wave absorber 5 includes a surface having a surface roughness Ra of 0.5 μm to 10 μm, and is disposed so that the surface and the paste 3 are in contact with each other. When the surface roughness of the surface in contact with the paste 3 is smaller than 0.5 μm, the anchor effect is not exhibited, so that sufficient bonding strength cannot be obtained. On the other hand, when the surface roughness is larger than 10 μm, the thickness of the bonded portion varies. In addition, since the organic coated Ag particles 1 are difficult to enter into the radio wave absorber 5, sufficient bonding strength cannot be obtained. As the radio wave absorber 5, it is easy to obtain a radio wave absorber having the above-mentioned surface roughness, and Fe ₂ O ₃ is the main component, and glass as a binder is 20 wt% to 45 wt%. What is obtained by sintering what is contained in% is preferable. Examples of the glass include those based on SiO ₂ and Bi ₂ O ₃ .
In addition, as shown in FIG. 2, it is preferable to use a radio wave absorber 5 that has a through hole 8 that penetrates in the thickness direction and has a diameter of 100 μm to 1000 μm. By using the radio wave absorber 5 having such a through-hole 8, outgas is easily released during sintering, and good bonding strength is obtained.

  Next, as shown in FIG. 1 (c), 0.1 m / in the direction from the radio wave absorber 5 to the lid body 4, the laminated body in which the lid body 4, the paste 3 and the radio wave absorber 5 are laminated in this order. A tapping operation for applying an impact at a speed of 1 to 1 m / sec is performed three times or more. By performing the tapping operation, the organic-coated Ag particles 1 uniformly dispersed in the solvent 2 before the tapping operation can be unevenly distributed on the lid 4 side. As a specific tapping operation, for example, a method of hitting the lid body 4 side of the laminated body in which the lid body 4, the paste 3, and the radio wave absorber 5 are laminated in this order on a SUS table or the like can be cited. If the tapping speed is less than 0.1 m / sec, sufficient bonding strength cannot be obtained and outgas is difficult to escape. On the other hand, if the tapping speed is greater than 1.0 m / sec, the organic coated Ag particles 1 are removed from the paste 3. As a result, the outgas is difficult to escape. Further, when the number of tapping operations is 2 or less, sufficient bonding strength cannot be obtained and outgas is difficult to escape. The number of tapping operations is preferably 3 to 20 times. If the number of tapping operations exceeds 20, the organic coated Ag particles 1 may flow out of the paste 3, and as a result, outgas may be difficult to escape.

  After the above-described tapping operation, as shown in FIG. 1 (d), when the paste 3 in a state where the organic coated Ag particles 1 are unevenly distributed on the lid 4 side is sandwiched between the lid 4 and the radio wave absorber 5 and pressed. On the side of the radio wave absorber 5 where the concentration of the organic coated Ag particles 1 is low, the solvent 2 flows and is discharged to the outside. Here, the pressure applied to the paste 3 is preferably 0.1 MPa to 10 MPa. If it is less than 0.1 MPa, the Ag denseness during sintering is low and may be easily peeled off. On the other hand, if the pressure is greater than 10 MPa, the radio wave absorber 5 may break during pressurization, and in an extreme case, this crack may also develop into the sintered Ag joint and the strength of the joint may be lowered. When sintering is performed at 200 ° C. to 350 ° C. while applying pressure in this manner, the solvent 2 that causes the generation of voids does not easily volatilize and remain in the interior.

  As shown in FIG. 1 (e), in the bonded structure 6 thus obtained, the lid 4 and the radio wave absorber 5 are firmly bonded via a dense bonded portion 7 made of Ag bulk. . In the present embodiment, since it is not necessary to apply metallization or a metal film to the radio wave absorber 5, the tact time can be shortened and the manufacturing cost can be reduced. Therefore, even if heated to about 400 ° C. in a subsequent seam welding process, no outgas is generated. Note that the configuration of the high-frequency device according to the present embodiment is the same as that of a known high-frequency device except for the joining form of the lid 4 and the radio wave absorber 5. The method for manufacturing a high-frequency device according to the present embodiment can also be applied to an optical element device used for high-speed information communication and high-frequency measurement.

  Hereinafter, although an Example and a comparative example demonstrate the detail of this invention, this invention is not limited by these.

[Example 1]
A lid of 25 mm × 20 mm × 1 mm thickness made of Kovar was prepared. Au plating of about 2 μm is applied to the surface of the lid.
A radio wave absorber having a size of 14 mm × 9 mm × thickness 1 mm was prepared by firing a material containing Fe ₂ O ₃ as a main component and 30 wt% SiO ₂ as a binder. The surface roughness Ra of this radio wave absorber was measured and found to be 5 μm.
Further, MAX102 manufactured by Nippon Data Material Co., Ltd. was prepared as a paste containing micro-sized organic coated Ag particles and a solvent. The average particle diameter of the organic coated Ag particles contained in this paste was 0.5 μm.
The paste was printed on the lid using a metal mask having an opening of 14 mm × 9 mm which is the same as the size of the wave absorber and a thickness of 100 μm. An operation (tapping operation) in which a sample having a radio wave absorber placed on a printed paste was picked with tweezers and applied to a table having a surface material of SUS304 from a height of about 50 mm (tapping operation) was repeated five times. The tapping speed was 0.5 m / sec.
Thereafter, the sample was dried at 100 ° C. for 30 minutes in the air under no pressure. Next, with a pressure of 2.5 MPa applied to the sample, the sample was heated from 100 ° C. to 300 ° C. at a rate of about 50 ° C./minute, held at 300 ° C. for 10 minutes and sintered, and then the pressure was released. The sample of Example 1 was obtained. When the cross section of the joint portion of the obtained sample was observed with an SEM, the thickness of the joint portion was about 50 μm.

  Next, when the shear test of the sample of Example 1 was performed using a shear test device (Resca Co., Ltd. bonding tester PTR-1102), it was found that the radio wave absorber was first destroyed and the bonding strength was high. It was. The shear test was carried out from a surface having a shear rate of 0.2 mm / second, a tool height: a position 50 μm above the lid, a tool width of 10 mm, and a length of 7 mm.

  Moreover, the outgas analysis of the sample of Example 1 was implemented using the outgas measuring apparatus (JEOL Co., Ltd. product JMS-Q1050GC type GC-MS). The sample is held at 400 ° C. for 10 minutes in the measuring device, and the generated gas components (water, hydrogen, nitrogen, oxygen, argon, carbon dioxide (carbon dioxide), methyl alcohol, ethyl alcohol, helium, fluorocarbon (fluorinate), neon , Carbon monoxide, krypton, xenon, methane, ammonia). As a reference, a single wave absorber was measured in the same manner. The sample of Example 1 was almost the same as the reference result and was a good result.

[Example 2]
A sample was produced in the same manner as in Example 1 except that the tapping speed was changed to 0.1 m / sec. The sample of Example 2 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 3
A sample was prepared in the same manner as in Example 1 except that the tapping speed was changed to 0.2 m / sec. The sample of Example 3 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 4
A sample was produced in the same manner as in Example 1 except that the tapping speed was changed to 1 m / sec. The sample of Example 4 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 5
A sample was produced in the same manner as in Example 1 except that the number of tapping operations was changed to 3. The sample of Example 5 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 6
A sample was produced in the same manner as in Example 1 except that the number of tapping operations was changed to 10. The sample of Example 6 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 7
A sample was produced in the same manner as in Example 1 except that the number of tapping operations was changed to 20. The sample of Example 7 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 8
A sample was prepared in the same manner as in Example 1 except that a radio wave absorber having a surface roughness of 0.5 μm was used instead of the radio wave absorber having a surface roughness of 5 μm. The sample of Example 8 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 9
A sample was prepared in the same manner as in Example 1 except that a radio wave absorber having a surface roughness of 1 μm was used instead of the radio wave absorber having a surface roughness of 5 μm. The sample of Example 9 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

Example 10
A sample was prepared in the same manner as in Example 1 except that a radio wave absorber having a surface roughness of 10 μm was used instead of the radio wave absorber having a surface roughness of 5 μm. The sample of Example 10 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 1]
Instead of paste containing micro-sized organic coated Ag particles and solvent, paste containing nano-sized organic coated Ag particles and solvent (T2W-A2 manufactured by DOWA Electronics Co., Ltd., average particle diameter of organic coated Ag particles: 30 nm A sample was prepared in the same manner as in Example 1 except that the tapping operation was not performed. The sample of Comparative Example 1 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 2]
Instead of paste containing micro-sized organic coated Ag particles and solvent, paste containing nano-sized organic coated Ag particles and solvent (T2W-A2 manufactured by DOWA Electronics Co., Ltd., average particle diameter of organic coated Ag particles: 30 nm A sample was prepared in the same manner as in Example 1 except that. The sample of Comparative Example 2 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 3]
A sample was prepared in the same manner as in Example 1 except that the tapping operation was not performed. The sample of Comparative Example 3 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 4]
A sample was prepared in the same manner as in Example 1 except that the tapping speed was changed to 0.05 m / sec. The sample of Comparative Example 4 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 5]
A sample was prepared in the same manner as in Example 1 except that the tapping speed was changed to 1.2 m / sec. The sample of Comparative Example 5 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 6]
A sample was produced in the same manner as in Example 1 except that the number of tapping operations was changed to 1. The sample of Comparative Example 6 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 7]
A sample was produced in the same manner as in Example 1 except that the number of tapping operations was changed to 30 times. The sample of Comparative Example 7 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 8]
A sample was prepared in the same manner as in Example 1 except that a radio wave absorber having a surface roughness of 0.3 μm was used instead of the radio wave absorber having a surface roughness of 5 μm. The sample of Comparative Example 8 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

[Comparative Example 9]
A sample was prepared in the same manner as in Example 1 except that a radio wave absorber having a surface roughness of 12 μm was used instead of the radio wave absorber having a surface roughness of 5 μm. The sample of Comparative Example 9 was evaluated in the same manner as in Example 1. The results are shown in Table 1.

  In addition, the result of the share test and outgas in Table 1 is a result of making and evaluating each of the five samples. In the shear test result column in Table 1, the sample described as “x” is peeled off at the interface between the joint and the radio wave absorber, and the sample described as “◯” is the radio wave absorber first. And the radio wave absorber remains on the joint. In addition, the sample indicated by ○ in the outgas column of Table 1 is almost the same as the reference result (in the case of the radio wave absorber alone), and the sample indicated by × is the gas The obvious occurrence of was observed. Moreover, in the sample of Comparative Example 7, the evaluation was Δ because only one of the five samples was x.

  It is unclear why the tapping operation improves the bonding strength and reduces the outgas. Therefore, cross-sectional observation was performed on the sample of Comparative Example 3 where the tapping operation was not performed and the sample of Example 1 where the tapping operation was performed. FIG. 3A shows a cross-sectional observation result of the sample of Comparative Example 3, and FIG. 3B shows a cross-sectional observation result of the sample of Example 1. As can be seen from this result, it was confirmed that the sample of Example 1 was densely formed with few porous portions at the joint. This tends to correlate with the results of the share test. Therefore, the good shear test clearly showed that the joint was dense.

  However, it is unclear why it became dense by tapping operation and the mechanism. Therefore, a sample was prepared in the same manner as in Example 1 and Comparative Example 3 except that the sintering time was reduced from 10 minutes to 1 minute, and a cross-sectional observation of the joint portion of the obtained sample was performed. FIG. 4A is a cross-sectional observation result of a sample obtained by shortening the sintering time in Comparative Example 3 from 10 minutes to 1 minute, and FIG. 4B shows the sintering time in Example 1. It is a cross-sectional observation result of the sample obtained by shortening from 10 minutes to 1 minute. As can be seen from this result, it was confirmed that the sample obtained by reducing the sintering time in Example 1 from 10 minutes to 1 minute had few organic components (black spots).

  In the examples and comparative examples described above, the tapping operation was lifted to a height of about 50 mm and performed at a predetermined tapping speed. If the tapping speed was in the range of 0.1 to 1 m / sec, the height was increased. Even if it changes (for example, 30-100 mm), it is guessed that the same effect is acquired.

  DESCRIPTION OF SYMBOLS 1 Organic coating | coated Ag particle | grains, 2 solvent, 3 paste, 4 lid body, 5 electromagnetic wave absorber, 6 junction structure, 7 junction part, 8 through-hole.

Claims (5)

  A paste containing micro-sized organic-coated Ag particles and a solvent is printed on the lid, and a radio wave absorber having a surface roughness Ra of 0.5 μm to 10 μm has the surface roughness on the printed paste. Including a tapping operation for applying an impact at a speed of 0.1 m / sec to 1 m / sec from the radio wave absorber toward the lid after the surface and the paste are in contact with each other. A method for manufacturing a high-frequency device.   2. The method according to claim 1, further comprising sintering the paste at 200 ° C. to 350 ° C. while being sandwiched between the lid and the wave absorber at a pressure of 0.1 MPa to 10 MPa after the tapping operation. Method for manufacturing a high-frequency device. _{3. The high} frequency wave according to claim 1, wherein the radio wave absorber is formed by sintering a material containing Fe ₂ O ₃ as a main component and containing 20 wt% to 45 wt% of glass. Device manufacturing method.   4. The method of manufacturing a high-frequency device according to claim 1, wherein the radio wave absorber uses a through-hole that penetrates in a thickness direction and has a diameter of 100 μm to 1000 μm. 5. .   A high-frequency device obtained by the method according to any one of claims 1 to 4.

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