JP2015005619A5 - Solid-state imaging device and camera - Google Patents
Solid-state imaging device and camera Download PDFInfo
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- JP2015005619A5 JP2015005619A5 JP2013129999A JP2013129999A JP2015005619A5 JP 2015005619 A5 JP2015005619 A5 JP 2015005619A5 JP 2013129999 A JP2013129999 A JP 2013129999A JP 2013129999 A JP2013129999 A JP 2013129999A JP 2015005619 A5 JP2015005619 A5 JP 2015005619A5
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- 238000003384 imaging method Methods 0.000 title claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 20
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 210000001747 pupil Anatomy 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
Description
本発明の一つの側面は固体撮像装置に係り、前記固体撮像装置は、半導体基板に配列された複数の画素を有する固体撮像装置であって、前記複数の画素のそれぞれは、前記半導体基板に設けられた光電変換部と、前記半導体基板上に配された絶縁部材と、前記絶縁部材に内包された遮光部と、前記絶縁部材の上に設けられたマイクロレンズと、を含み、前記複数の画素は、前記マイクロレンズを通過した光を前記光電変換部で受けるように前記遮光部に開口が設けられ、該遮光部により隣接画素からの光を遮光する第１の画素と、前記マイクロレンズを通過した光の一部を遮光するように、前記光電変換部に対して偏心した開口が前記遮光部に設けられた第２の画素と、を含んでおり、前記第１の画素および前記第２の画素の少なくとも一方の前記絶縁部材は、前記第１の画素では撮像レンズの瞳像の結像位置が前記遮光部よりも前記光電変換部側になるように、かつ、前記第２の画素では前記撮像レンズの瞳像の結像位置が前記光電変換部よりも前記遮光部側になるように、平板状の部材を有していることを特徴とする。
One aspect of the present invention relates to a solid-state imaging device, the solid-state imaging device is a solid-state imaging device having a plurality of pixels array on a semiconductor substrate, each of said plurality of pixels, said semiconductor substrate a photoelectric conversion portion provided, and an insulating member disposed on said semiconductor substrate, a light shielding portion embedded in said insulating member includes a microlens disposed on said insulating member, said plurality of The pixel is provided with an opening in the light-shielding unit so that the light that has passed through the microlens is received by the photoelectric conversion unit, and the first lens that shields light from an adjacent pixel by the light-shielding unit; A second pixel provided in the light-shielding part with an opening decentered with respect to the photoelectric conversion part so as to shield part of the light that has passed through, the first pixel and the second pixel at least one of the pixel Said insulating member is a pupil image of the first in the pixel as the imaging position of the pupil image of the imaging lens becomes the photoelectric conversion portion side of the light shielding portion, and wherein the imaging lens in the second pixel It has a flat plate-like member so that the image forming position is closer to the light shielding part than the photoelectric conversion part .
Claims (18)
前記複数の画素のそれぞれは、
前記半導体基板に設けられた光電変換部と、
前記半導体基板上に配された絶縁部材と、
前記絶縁部材に内包された遮光部と、
前記絶縁部材の上に設けられたマイクロレンズと、
を含み、
前記複数の画素は、
前記マイクロレンズを通過した光を前記光電変換部で受けるように前記遮光部に開口が設けられ、該遮光部により隣接画素からの光を遮光する第１の画素と、
前記マイクロレンズを通過した光の一部を遮光するように、前記光電変換部に対して偏心した開口が前記遮光部に設けられた第２の画素と、
を含んでおり、
前記第１の画素および前記第２の画素の少なくとも一方の前記絶縁部材は、前記第１の画素では撮像レンズの瞳像の結像位置が前記遮光部よりも前記光電変換部側になるように、かつ、前記第２の画素では前記撮像レンズの瞳像の結像位置が前記光電変換部よりも前記遮光部側になるように、平板状の部材を有している
ことを特徴とする固体撮像装置。 A solid-state imaging device having a plurality of pixels array on a semiconductor substrate,
Each of the plurality of pixels is
A photoelectric conversion unit provided on the semiconductor substrate;
An insulating member disposed on the semiconductor substrate;
A light shielding part included in the insulating member ;
A microlens provided on the insulating member ;
Including
The plurality of pixels are:
An opening is provided in the light-shielding unit so that the light that has passed through the microlens is received by the photoelectric conversion unit, and a first pixel that shields light from an adjacent pixel by the light-shielding unit;
A second pixel provided in the light-shielding portion with an opening eccentric to the photoelectric conversion unit so as to shield part of the light that has passed through the microlens;
Contains
The insulating member of at least one of the first pixel and the second pixel is arranged such that the imaging position of the pupil image of the imaging lens is closer to the photoelectric conversion unit than the light shielding unit in the first pixel. In addition, the second pixel has a flat plate-like member so that the imaging position of the pupil image of the imaging lens is closer to the light shielding portion than the photoelectric conversion portion. Imaging device.
ことを特徴とする請求項１に記載の固体撮像装置。The solid-state imaging device according to claim 1.
ことを特徴とする請求項１または請求項２に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
ことを特徴とする請求項１から請求項３のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to any one of claims 1 to 3, wherein the solid-state imaging device is provided.
ことを特徴とする請求項１から請求項４のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to any one of claims 1 to 4, wherein the solid-state imaging device is provided.
前記第１の画素および前記第２の画素のうち前記第１の画素の前記絶縁部材に配されており、Of the first pixel and the second pixel, the insulating member of the first pixel is disposed,
前記半導体基板の上面に対する平面視において、その外縁が前記第１の画素とその隣接画素との境界に沿うように配されたIn a plan view with respect to the upper surface of the semiconductor substrate, the outer edge is arranged along the boundary between the first pixel and the adjacent pixel.
ことを特徴とする請求項１から請求項５のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
前記第１の画素および前記第２の画素のうち前記第２の画素の前記絶縁部材に配されており、Of the first pixel and the second pixel, disposed on the insulating member of the second pixel,
前記半導体基板の上面に対する平面視において、その外縁が前記第２の画素とその隣接画素との境界に沿うように配されたIn the plan view with respect to the upper surface of the semiconductor substrate, the outer edge thereof is arranged along the boundary between the second pixel and the adjacent pixel.
ことを特徴とする請求項１から請求項５のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
ことを特徴とする請求項１から請求項７のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 1, wherein the solid-state imaging device is provided.
ことを特徴とする請求項１から請求項７のいずれか１項に記載の固体撮像装置。 Said plate member is any one of claims 1 to 7, characterized in that provided from the side below the light blocking part so as to straddle the light-shielding portion over the side above the light-shielding portion The solid-state imaging device according to item .
前記第１の画素の前記絶縁部材における光路長は、前記第２の画素の前記絶縁部材における光路長よりも大きいこと、
の少なくとも一方を満たす
ことを特徴とする請求項１から請求項９のいずれか１項に記載の固体撮像装置。 The average value of the refractive index in the insulating member of the first pixel is greater than the average value of the refractive index in the insulating member of the second pixel, and the optical path length in the insulating member of the first pixel Is larger than the optical path length in the insulating member of the second pixel,
The solid-state imaging device according to any one of claims 1 to 9, characterized in that satisfies at least hand of.
前記複数の画素のそれぞれは、
前記半導体基板に設けられた光電変換部と、
前記半導体基板上に配された絶縁部材と、
前記絶縁部材の上に設けられたマイクロレンズと、
を含み、
前記複数の画素は、第１の画素と第２の画素とを含んでおり、
前記第１の画素および前記第２の画素の少なくとも一方の前記絶縁部材は、前記第１の画素では撮像レンズの瞳像の結像位置が前記半導体基板の表面から深い位置になるように、かつ、前記第２の画素では前記撮像レンズの瞳像の結像位置が前記第１の画素に比べて浅い位置になるように、平板状の部材を有している
ことを特徴とする固体撮像装置。 A solid-state imaging device having a plurality of pixels array on a semiconductor substrate,
Each of the plurality of pixels is
A photoelectric conversion unit provided on the semiconductor substrate;
An insulating member disposed on the semiconductor substrate;
A microlens provided on the insulating member;
Including
The plurality of pixels include a first pixel and a second pixel,
The insulating member of at least one of the first pixel and the second pixel is arranged such that the imaging position of the pupil image of the imaging lens is deep from the surface of the semiconductor substrate in the first pixel, and The solid-state imaging device , wherein the second pixel has a plate-like member so that the imaging position of the pupil image of the imaging lens is shallower than the first pixel. .
ことを特徴とする請求項１１に記載の固体撮像装置。The solid-state imaging device according to claim 11.
前記２つの光電変換部は、一方に前記マイクロレンズを通過した光の一部が入射し、かつ、他方に前記マイクロレンズを通過した光の他の一部が入射するように、前記半導体基板に設けられたThe two photoelectric conversion units are arranged on the semiconductor substrate so that a part of the light passing through the microlens is incident on one side and another part of the light passing through the microlens is incident on the other. Provided
ことを特徴とする請求項１１または請求項１２に記載の固体撮像装置。13. The solid-state imaging device according to claim 11 or 12, wherein:
ことを特徴とする請求項１１から請求項１３のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 11, wherein the solid-state imaging device is provided.
前記第１の画素および前記第２の画素のうち前記第１の画素の前記絶縁部材に配されており、Of the first pixel and the second pixel, the insulating member of the first pixel is disposed,
前記半導体基板の上面に対する平面視において、その外縁が前記第１の画素とその隣接画素との境界に沿うように配されたIn a plan view with respect to the upper surface of the semiconductor substrate, the outer edge is arranged along the boundary between the first pixel and the adjacent pixel.
ことを特徴とする請求項１１から請求項１４のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 11, wherein the solid-state imaging device is provided.
前記第１の画素および前記第２の画素のうち前記第２の画素の前記絶縁部材に配されており、Of the first pixel and the second pixel, disposed on the insulating member of the second pixel,
前記半導体基板の上面に対する平面視において、その外縁が前記第２の画素とその隣接画素との境界に沿うように配されたIn the plan view with respect to the upper surface of the semiconductor substrate, the outer edge thereof is arranged along the boundary between the second pixel and the adjacent pixel.
ことを特徴とする請求項１１から請求項１４のいずれか１項に記載の固体撮像装置。The solid-state imaging device according to claim 11, wherein the solid-state imaging device is provided.
ことを特徴とする請求項１乃至１６のいずれか１項に記載の固体撮像装置。 The microlens of the first pixel and the microlens of the second pixel are made of materials having the same refractive index and have the same shape.
The solid-state imaging device according to any one of claims 1 to 16, wherein the.
前記固体撮像装置から出力される信号を処理する処理部と、
を備えることを特徴とするカメラ。
A solid-state imaging device according to any one of claims 1 to 17 ,
A processing unit for processing a signal output from the solid-state imaging device;
A camera comprising:
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013129999A JP2015005619A (en) | 2013-06-20 | 2013-06-20 | Solid state imaging device, method for producing the same, and camera |
| US14/294,465 US20140375852A1 (en) | 2013-06-20 | 2014-06-03 | Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus |
| CN201410275543.4A CN104241306A (en) | 2013-06-20 | 2014-06-19 | Solid-state imaging apparatus, method of manufacturing the same, camera, imaging device, and imaging apparatus |
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|---|---|---|---|
| JP2013129999A JP2015005619A (en) | 2013-06-20 | 2013-06-20 | Solid state imaging device, method for producing the same, and camera |
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| Publication Number | Publication Date |
|---|---|
| JP2015005619A JP2015005619A (en) | 2015-01-08 |
| JP2015005619A5 true JP2015005619A5 (en) | 2016-06-30 |
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| JP6103301B2 (en) | 2013-07-03 | 2017-03-29 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| JP6115787B2 (en) * | 2013-12-18 | 2017-04-19 | ソニー株式会社 | Solid-state imaging device, manufacturing method thereof, and electronic apparatus |
| JP6970595B2 (en) * | 2017-11-24 | 2021-11-24 | ブリルニクス シンガポール プライベート リミテッド | Solid-state image sensor, manufacturing method of solid-state image sensor, and electronic equipment |
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