JP2015002414A - Electronic device - Google Patents

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Publication number
JP2015002414A
JP2015002414A JP2013125675A JP2013125675A JP2015002414A JP 2015002414 A JP2015002414 A JP 2015002414A JP 2013125675 A JP2013125675 A JP 2013125675A JP 2013125675 A JP2013125675 A JP 2013125675A JP 2015002414 A JP2015002414 A JP 2015002414A
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Prior art keywords
lid
cavity
base
bonding
film
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Japanese (ja)
Inventor
賢志 唐澤
Kenji Karasawa
賢志 唐澤
吉田　宜史
Yoshifumi Yoshida
宜史 吉田
剛 杉山
Takeshi Sugiyama
剛 杉山
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Seiko Instruments Inc
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Seiko Instruments Inc
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Priority to JP2013125675A priority Critical patent/JP2015002414A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To reliably seal a cavity 4 with a bonding film, and suppress a characteristic deterioration of an electronic element 5 by adsorbing a gas in the cavity 4 and reducing a pressure fluctuation in the cavity 4 with a storage metal film 7 placed in the cavity 4.SOLUTION: An electronic device 1 includes: a base 2; a lid 3 bonded to the base 2 with the cavity formed to the base 2; the electronic element 5 housed in the cavity 4; a bonding film 6 placed in an interface of the lid 3 and the base 2 and brought in contact with the lid 3 and the base 2; and the storage metal film 7 formed on a surface of the lid 3 facing the cavity 4, exposed in the cavity 4, and formed of a different material from the bonding film 6 to store hydrogen.

Description

本発明は、パッケージに電子素子を収納する電子デバイスに関する。   The present invention relates to an electronic device that houses an electronic element in a package.

従来から、携帯電話や携帯情報端末機には表面実装型の電子デバイスが多く用いられている。このうち、水晶振動子などの圧電振動子やＭＥＭＳ、ジャイロ、加速度センサ等は、パッケージの内部に中空のキャビティが形成され、このキャビティに水晶振動子やＭＥＭＳ等の電子素子が封入されている。パッケージとしてガラス材料が用いられる。例えばガラス基板に電子素子が実装され、その上にガラス蓋が陽極接合により接合されて電子素子が密封される。ガラスどうしの陽極接合は気密性が高くしかも安価であるという利点がある。   2. Description of the Related Art Conventionally, surface-mounted electronic devices are often used for mobile phones and portable information terminals. Among these, a piezoelectric resonator such as a crystal resonator, a MEMS, a gyroscope, an acceleration sensor, and the like have a hollow cavity formed in a package, and an electronic element such as a crystal resonator and MEMS is enclosed in the cavity. A glass material is used as the package. For example, an electronic element is mounted on a glass substrate, and a glass lid is bonded thereon by anodic bonding to seal the electronic element. Anodic bonding between glasses has the advantage of being highly airtight and inexpensive.

電子デバイスにおいて、圧電振動子は、ガラスからなる基板体と、ガラスからなる蓋体と、基板体と蓋体の凹部との間に形成されるキャビティに収納される圧電振動素子から構成される。基板体には水晶片からなる圧電振動素子が片持ち状に実装される。蓋体には凹部が形成され、この凹部の周囲の上端面及び凹部の内表面の全面にはアルミニウムからなる接合用金属膜が形成される。基板体には貫通電極が形成され、キャビティ側の表面に形成される配線とキャビティ側とは反対側の表面に形成される外部端子とを電気的に接続する。蓋体は基板体に陽極接合により接合される。   In the electronic device, the piezoelectric vibrator includes a substrate body made of glass, a lid body made of glass, and a piezoelectric vibration element housed in a cavity formed between the substrate body and the concave portion of the lid body. A piezoelectric vibration element made of a crystal piece is cantilevered on the substrate body. A concave portion is formed in the lid, and a bonding metal film made of aluminum is formed on the upper end surface around the concave portion and the entire inner surface of the concave portion. A through electrode is formed in the substrate body, and the wiring formed on the cavity side surface is electrically connected to the external terminal formed on the surface opposite to the cavity side. The lid is bonded to the substrate body by anodic bonding.

接合用金属膜を蓋体に設けるので基板体のキャビティ側の配線とショートすることがなく、また、接合用金属膜を蓋体の凹部の側の全面に、つまり凹部の周囲の枠部の上端面及び凹部の内表面に設けるので接合用金属膜のパターニングが必要なく、容易に製造することができる。   Since the bonding metal film is provided on the lid, there is no short circuit with the wiring on the cavity side of the substrate body, and the bonding metal film is placed on the entire surface of the lid on the recess side, that is, on the frame around the recess. Since it is provided on the end surface and the inner surface of the recess, patterning of the bonding metal film is not required, and it can be easily manufactured.

特開２００９−１１１９３０号公報JP 2009-1111930 A

上記従来構造では、蓋体に形成した接合用金属膜の断面が外部に露出している。接合用金属膜はアルミニウム膜からなり、その露出部は外気の水分等が付着して腐食する。腐食が進行するとアルミニウム膜は負に帯電する。すると、凹部の内表面に形成されるアルミニウム膜にも負電荷が伝達され、ガラス内部からナトリウムイオンを引き寄せる。内表面のアルミニウム膜は、表面に付着する水分と引き寄せられたナトリウムイオンが反応して腐食する。この腐食に伴ってガスが発生し、キャビティ内に実装される電子素子の特性劣化を引き起こす原因となる。特に凹部の内表面はサンドブラスト法やエッチング処理により、或いは軟化点以上での型成形により形成されるので表面が粗く、水分が付着しやすい。   In the conventional structure, the cross section of the bonding metal film formed on the lid is exposed to the outside. The bonding metal film is made of an aluminum film, and the exposed portion is corroded by moisture from the outside air. As corrosion progresses, the aluminum film becomes negatively charged. Then, negative charges are also transmitted to the aluminum film formed on the inner surface of the recess, and sodium ions are attracted from the inside of the glass. The aluminum film on the inner surface corrodes when water adhering to the surface reacts with attracted sodium ions. Along with this corrosion, gas is generated, which causes deterioration of the characteristics of the electronic device mounted in the cavity. In particular, the inner surface of the recess is formed by sandblasting or etching, or by molding at or above the softening point, so the surface is rough and moisture tends to adhere.

例えば、電子素子としてＭＥＭＳセンサを用いる場合は、ＭＥＭＳセンサの振動が空気抵抗によって影響を受ける。これを避けるために、キャビティ内を真空に維持する。しかし、外気に露出するアルミニウム膜の腐食が進行すると凹部の内表面側のアルミニウム膜も腐食し、表面に付着する水分が引き寄せられたナトリウムイオンと反応して水素ガスを発生する。この水素ガスがキャビティ内の真空度を低下させる。これらキャビティ内の圧力変動はＭＥＭＳセンサの振動を変動させることになり、特性劣化の原因となる。   For example, when a MEMS sensor is used as the electronic element, the vibration of the MEMS sensor is affected by air resistance. In order to avoid this, the inside of the cavity is kept in a vacuum. However, when the corrosion of the aluminum film exposed to the outside air proceeds, the aluminum film on the inner surface side of the recess also corrodes, and the water adhering to the surface reacts with the attracted sodium ions to generate hydrogen gas. This hydrogen gas lowers the degree of vacuum in the cavity. These pressure fluctuations in the cavity cause fluctuations in the vibration of the MEMS sensor, which causes characteristic deterioration.

本発明は、上記課題に鑑みてなされたものであり、キャビティ内の金属の腐食に伴って発生するガスにより内部に収納される電子素子の特性が劣化することを防止した電子デバイス、発信機及び電子デバイスの製造方法を提供することを目的とする。   The present invention has been made in view of the above problems, and an electronic device, a transmitter, and a transmitter that prevent deterioration of characteristics of an electronic element housed therein due to gas generated due to corrosion of a metal in a cavity. An object is to provide a method for manufacturing an electronic device.

本発明の電子デバイスは、基体と、前記基体との間にキャビティを形成して前記基体に接合される蓋体と、前記キャビティに収納される電子素子と、前記蓋体と前記基体との接合面に設置され、前記蓋体及び前記基体と接する接合膜と、前記蓋体の前記キャビティ側の表面に形成されるとともに、前記キャビティ内に露出し、前記接合膜と異なる材料で形成され、水素を吸蔵する吸蔵金属膜と、を備えることを特徴とする。   The electronic device according to the present invention includes a base, a lid formed with a cavity between the base and joined to the base, an electronic element housed in the cavity, and a joint between the lid and the base. A bonding film that is installed on a surface and is in contact with the lid and the base; and is formed on a surface of the lid on the cavity side, is exposed in the cavity, and is formed of a material different from that of the bonding film; And an occlusion metal film for occlusion.

また、前記基体及び前記蓋体の少なくとも一方はガラス又はシリコンで形成され、前記接合膜は、陽極接合用の接合膜で形成され、前記基体と前記蓋体とを陽極接合してもよい。   Further, at least one of the base body and the lid body may be formed of glass or silicon, the bonding film may be formed of a bonding film for anodic bonding, and the base body and the lid body may be anodically bonded.

また、前記接合膜は、前記蓋体の前記キャビティ側の表面に設置され、前記吸蔵金属膜は、前記接合膜の表面上に設置されてもよい。   The bonding film may be installed on a surface of the lid on the cavity side, and the occluded metal film may be installed on the surface of the bonding film.

また、前記蓋体は中央に前記キャビティを形成する凹部を有し、前記凹部の周囲の上端面に前記接合膜が形成され、前記凹部の底面に前記吸蔵金属膜が形成されてもよい。   The lid may have a concave portion that forms the cavity in the center, the bonding film may be formed on an upper end surface around the concave portion, and the occlusion metal film may be formed on the bottom surface of the concave portion.

また、前記接合膜はアルミニウム、クロム又はシリコン、モリブデン、鉄合金のいずれかを含み、前記吸蔵金属膜はチタン、ジルコニウム、バナジウム、ハフニウムのいずれかを含んでもよい。   The bonding film may include any of aluminum, chromium, silicon, molybdenum, and iron alloy, and the occlusion metal film may include any of titanium, zirconium, vanadium, and hafnium.

また、前記電子素子はＭＥＭＳであってもよい。   The electronic element may be a MEMS.

本発明の電子デバイスは、キャビティ内の封止を接合膜により確実に行うとともに、吸蔵金属膜によりキャビティ内のガスを吸着し、キャビティ内の圧力変動を低減させ、電子素子の特性劣化を抑制する。   The electronic device of the present invention securely seals the inside of the cavity with the bonding film, adsorbs the gas in the cavity with the occlusion metal film, reduces the pressure fluctuation in the cavity, and suppresses the deterioration of the characteristics of the electronic element. .

本発明の第一実施形態に係る電子デバイスの斜視図である。1 is a perspective view of an electronic device according to a first embodiment of the present invention. 本発明の第一実施形態に係る電子デバイスの断面模式図である。It is a cross-sectional schematic diagram of the electronic device which concerns on 1st embodiment of this invention. 図２の蓋体のキャビティ側を平面視する図である。It is a figure which carries out the planar view of the cavity side of the cover body of FIG. 本発明の第一実施形態に係る電子デバイスの製造方法を表す工程図である。It is process drawing showing the manufacturing method of the electronic device which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係る電子デバイスの製造方法における各工程の説明図である。It is explanatory drawing of each process in the manufacturing method of the electronic device which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係る電子デバイスの製造方法を表す工程図である。It is process drawing showing the manufacturing method of the electronic device which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係る電子デバイスの変形例の断面模式図である。It is a cross-sectional schematic diagram of the modification of the electronic device which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係る電子デバイスの変形例の断面模式図である。It is a cross-sectional schematic diagram of the modification of the electronic device which concerns on 1st embodiment of this invention. 本発明の第一実施形態に係る電子デバイスの変形例の断面模式図である。It is a cross-sectional schematic diagram of the modification of the electronic device which concerns on 1st embodiment of this invention.

＜電子デバイス＞
本発明に係る電子デバイスは、基体と、基体との間にキャビティを形成して基体に接合される蓋体と、キャビティに収納される電子素子と、蓋体と基体との接合面に設置され、蓋体及び基体と接する接合膜と、蓋体のキャビティ側の表面に形成されるとともに、キャビティ内に露出し、接合膜と異なる材料で形成され、水素を吸蔵する吸蔵金属膜と、を備える。吸蔵金属膜は水素吸蔵性を有し、水素を一旦吸着すると脱離し難い性質を有する。 <Electronic device>
An electronic device according to the present invention is installed on a bonding surface between a base, a lid that forms a cavity between the base and is bonded to the base, an electronic element that is housed in the cavity, and the lid and the base. A bonding film in contact with the lid and the substrate, and an occlusion metal film that is formed on a surface of the lid on the cavity side, is exposed in the cavity, is formed of a material different from the bonding film, and occludes hydrogen. . The occlusion metal film has a hydrogen occlusion property and has a property that it is difficult to desorb once the hydrogen is adsorbed.

吸蔵金属膜として、チタン、ジルコニウム、バナジウム、ハフニウム又はこれら材料のいずれかを含む合金を使用することができる。キャビティ側の表面に吸蔵金属膜を形成することにより、キャビティ内部に残留する水素或いは内部で発生する水素を吸着し、キャビティ内の圧力変動を低減させ、電子素子の特性を安定させることができる。   As the occlusion metal film, titanium, zirconium, vanadium, hafnium, or an alloy containing any of these materials can be used. By forming the occlusion metal film on the surface on the cavity side, hydrogen remaining in the cavity or hydrogen generated inside can be adsorbed, pressure fluctuation in the cavity can be reduced, and the characteristics of the electronic element can be stabilized.

（第一実施形態）
図１は本発明の第一実施形態に係る電子デバイス１の斜視図である。基体２と蓋体３とは、接合膜６を介して接合される。また基体２の裏面には、外部電極１４が形成されている。本実施形態において、電子デバイス１は直方体に形成される。 (First embodiment)
FIG. 1 is a perspective view of an electronic device 1 according to the first embodiment of the present invention. The base 2 and the lid 3 are bonded via the bonding film 6. An external electrode 14 is formed on the back surface of the substrate 2. In this embodiment, the electronic device 1 is formed in a rectangular parallelepiped.

図２は本発明の第一実施形態に係る電子デバイス１の断面模式図である。また、図３は図２の蓋体のキャビティ側を平面視した図である。   FIG. 2 is a schematic cross-sectional view of the electronic device 1 according to the first embodiment of the present invention. FIG. 3 is a plan view of the cavity side of the lid of FIG.

蓋体３は中央に凹部８を有し、凹部８の周囲の上端面には接合膜６が形成される。接合膜６は、凹部８の周囲の上端面を囲って連続的に形成されている。凹部８の底面及び内側面には吸蔵金属膜７が形成される。本実施形態において、吸蔵金属膜７は、凹部８の底面及び内側面の全体に形成されている。接合膜６は、蓋体３及び基体２の両方に接している。本実施形態において、接合膜６は、一層で形成されている。このように、凹部８の周囲の上端面に接合膜６を形成し、凹部８の底面及び内側面に吸蔵金属膜７を形成すれば、製造方法が容易となる。即ち、蓋体３の凹部８側から最初に接合膜６を堆積し、次に連続して吸蔵金属膜７を堆積し、次に上端面から吸蔵金属膜７を除去すればよい。
また、接合膜６は、キャビティ４を介して一端から他端まで連続的に形成することもできるため、陽極接合の際に接合膜６への電圧印加を確実に行うことができる。 The lid 3 has a recess 8 at the center, and a bonding film 6 is formed on the upper end surface around the recess 8. The bonding film 6 is continuously formed so as to surround the upper end surface around the recess 8. The occluded metal film 7 is formed on the bottom surface and the inner side surface of the recess 8. In the present embodiment, the occlusion metal film 7 is formed on the entire bottom surface and inner side surface of the recess 8. The bonding film 6 is in contact with both the lid 3 and the substrate 2. In the present embodiment, the bonding film 6 is formed of a single layer. Thus, if the bonding film 6 is formed on the upper end surface around the recess 8 and the occlusion metal film 7 is formed on the bottom surface and the inner surface of the recess 8, the manufacturing method becomes easy. That is, the bonding film 6 is first deposited from the concave portion 8 side of the lid 3, then the occlusion metal film 7 is continuously deposited, and then the occlusion metal film 7 is removed from the upper end surface.
Further, since the bonding film 6 can be continuously formed from one end to the other end via the cavity 4, it is possible to reliably apply a voltage to the bonding film 6 during anodic bonding.

本実施形態では、接合膜６は蓋体３及び基体２と接している。そのため、キャビティ４内の封止を十分に行うことができる。また、吸蔵金属膜７は接合時に放出されるガスや内部で発生するガスを吸着してキャビティ４内の圧力変動を低減し、電子素子の特性を安定させることができる。   In the present embodiment, the bonding film 6 is in contact with the lid 3 and the base 2. Therefore, the inside of the cavity 4 can be sufficiently sealed. Further, the occluded metal film 7 can adsorb the gas released at the time of bonding and the gas generated inside to reduce the pressure fluctuation in the cavity 4 and stabilize the characteristics of the electronic element.

すなわち、接合膜によりキャビティ４内の封止を十分に行いつつ、吸蔵金属膜７によりキャビティ４内の圧力変動を低減することで、キャビティ４内の気密封止を向上させ、電子素子の特性を安定させることができる。   In other words, while the cavity 4 is sufficiently sealed by the bonding film, the occlusion metal film 7 reduces the pressure fluctuation in the cavity 4, thereby improving the hermetic sealing in the cavity 4 and improving the characteristics of the electronic device. It can be stabilized.

基体２は、蓋体３側の表面に配線１１が形成され、反対側の表面には外部電極１４が形成され、板厚方向に貫通する貫通電極１３により配線１１と貫通電極１３とは電気的に接続される。基体２の蓋体３側の表面には電子素子５が実装される。電子素子５の表面には図示しない電極が形成され、電子素子５の電極と配線１１とはワイヤー１２により電気的に接続される。蓋体３は基体２に接合膜６を介して陽極接合される。基体２と蓋体３の凹部８によりキャビティ４が形成され、キャビティ４に電子素子５が収納される。従って、電子素子５の図示しない電極と外部電極１４とはワイヤー１２、配線１１及び貫通電極１３を介して電気的に接続される。   The substrate 2 has a wiring 11 formed on the surface on the lid 3 side, an external electrode 14 formed on the opposite surface, and the wiring 11 and the through electrode 13 are electrically connected by a through electrode 13 penetrating in the plate thickness direction. Connected to. An electronic element 5 is mounted on the surface of the base 2 on the lid 3 side. An electrode (not shown) is formed on the surface of the electronic element 5, and the electrode of the electronic element 5 and the wiring 11 are electrically connected by a wire 12. The lid 3 is anodically bonded to the base 2 via a bonding film 6. A cavity 4 is formed by the recess 2 of the base 2 and the lid 3, and the electronic element 5 is accommodated in the cavity 4. Therefore, the electrode (not shown) of the electronic element 5 and the external electrode 14 are electrically connected via the wire 12, the wiring 11, and the through electrode 13.

基体２及び蓋体３はソーダ石灰ガラス、ホウケイ酸ガラス、その他のガラスからなる板を使用することができる。電子素子５は、ＭＥＭＳ、水晶振動子、発光ダイオード、受光素子、その他を使用することができる。接合膜６はアルミニウム、シリコン、クロム、モリブデン、鉄合金その他の導電材料又はこれら材料のいずれかを含む複合物を使用することができる。なお、基体２及び蓋体３のいずれか一方をシリコンで形成し、他方を上記のガラスで形成することもできる。   As the base 2 and the lid 3, a plate made of soda-lime glass, borosilicate glass, or other glass can be used. As the electronic element 5, a MEMS, a crystal resonator, a light emitting diode, a light receiving element, or the like can be used. The bonding film 6 can be made of aluminum, silicon, chromium, molybdenum, iron alloy or other conductive material or a composite containing any of these materials. One of the base 2 and the lid 3 can be formed of silicon, and the other can be formed of the above glass.

この構成により、陽極接合が可能となり、接合膜６から陽極接合時に発生する水素ガスを吸蔵金属膜７で確実に吸着させることができる。
なお、陽極接合以外の接合においても、水素ガスが発生する場合があるため、その場合、上記の構成により、吸蔵金属膜７で水素ガスを吸着することが可能である。 With this configuration, anodic bonding is possible, and hydrogen gas generated during anodic bonding from the bonding film 6 can be reliably adsorbed by the occluded metal film 7.
In addition, since hydrogen gas may be generated also in bonding other than anodic bonding, in that case, it is possible to adsorb hydrogen gas by the occluded metal film 7 with the above configuration.

吸蔵金属膜７を蓋体３のキャビティ４側の表面に露出させるように形成したので、水素を吸着するゲッタリング効果を利用することができる。蓋体３に形成した接合膜６を陽極とし基体２を陰極として高電圧を印加して陽極接合する場合、水素ガスが発生するが、吸蔵金属膜７はこの水素ガスを吸着する。また、吸蔵金属膜７は、例えば接合膜６が水分等により腐食して負に帯電する場合でも、表面に付着する水分やガラス中のナトリウムイオンによって腐食され難く、腐食に伴うガスの発生も少ない。その結果、キャビティ４内の圧力変動が低減し、電子素子５の特性が安定する。
これにより、陽極接合時に発生するガスを吸蔵金属膜７により確実に吸着することができる。 Since the occluded metal film 7 is formed so as to be exposed on the surface of the lid 3 on the cavity 4 side, the gettering effect of adsorbing hydrogen can be used. When anodic bonding is performed by applying a high voltage using the bonding film 6 formed on the lid 3 as an anode and the substrate 2 as a cathode, hydrogen gas is generated, but the occlusion metal film 7 adsorbs the hydrogen gas. Further, the occlusion metal film 7 is hardly corroded by moisture adhering to the surface or sodium ions in the glass even when the bonding film 6 corrodes due to moisture or the like and is negatively charged. . As a result, the pressure fluctuation in the cavity 4 is reduced, and the characteristics of the electronic element 5 are stabilized.
Thereby, the gas generated at the time of anodic bonding can be reliably adsorbed by the occluded metal film 7.

本実施形態においては、蓋体３は中央部に凹部８を有する。凹部８の周囲の上端面に接合膜６が形成される。凹部８の底面及び内側面に吸蔵金属膜７が形成される。基体２は、板厚方向に貫通する２つの貫通電極１３を有し、キャビティ４側の表面には２つの配線１１が形成され、キャビティ４とは反対側の表面には２つの外部電極１４が形成される。各配線１１は貫通電極１３を介して外部電極１４にそれぞれ電気的に接続される。基体２のキャビティ４側の表面には電子素子５が実装される。電子素子５はその上面に図示しない電極が形成され、ワイヤー１２を介して配線１１に電気的に接続される。これにより、２つの外部電極１４から駆動電力や駆動信号をキャビティ４内の電子素子５に供給することができる。   In the present embodiment, the lid 3 has a recess 8 at the center. A bonding film 6 is formed on the upper end surface around the recess 8. The occluded metal film 7 is formed on the bottom surface and the inner surface of the recess 8. The substrate 2 has two through electrodes 13 penetrating in the plate thickness direction, two wirings 11 are formed on the surface on the cavity 4 side, and two external electrodes 14 are formed on the surface opposite to the cavity 4. It is formed. Each wiring 11 is electrically connected to the external electrode 14 through the through electrode 13. An electronic element 5 is mounted on the surface of the base 2 on the cavity 4 side. An electrode (not shown) is formed on the upper surface of the electronic element 5 and is electrically connected to the wiring 11 through the wire 12. Thereby, drive power and drive signal can be supplied from the two external electrodes 14 to the electronic element 5 in the cavity 4.

なお、本実施形態において電子素子５と配線１１との間をワイヤー１２により電気的に接続したが、これに代えて電子素子５を基体２に面実装することができる。例えば電子素子５として音叉型の水晶振動子を使用する場合には、音叉型の基部を配線１１に片持ち状に接合し、キャビティ４内を真空に引いて基体２と蓋体３とを陽極接合する。このとき、吸蔵金属膜７の表面がキャビティ４に露出するので、陽極接合の際に水素ガスが発生しキャビティ４内に残留しても、その残留酸素ガスは吸蔵金属膜７により吸着され、キャビティ４内は所定の真空度に維持される。そのため音叉型の水晶振動子の振動を劣化させることがない。また、接合膜６の断面が外部に露出し、その端面が腐食して吸蔵金属膜７が負に帯電した場合でも、吸蔵金属膜７は腐食され難く、また、ガスが発生したときは吸蔵金属膜７により吸着されるので、キャビティ４内を所定の真空度に長期間維持することができる。   In the present embodiment, the electronic element 5 and the wiring 11 are electrically connected by the wire 12, but the electronic element 5 can be surface-mounted on the base 2 instead. For example, when a tuning fork type crystal resonator is used as the electronic element 5, the tuning fork type base is joined to the wiring 11 in a cantilever manner, and the inside of the cavity 4 is evacuated to connect the base 2 and the lid 3 to the anode. Join. At this time, since the surface of the occluded metal film 7 is exposed to the cavity 4, even if hydrogen gas is generated during anodic bonding and remains in the cavity 4, the residual oxygen gas is adsorbed by the occluded metal film 7. The inside of 4 is maintained at a predetermined degree of vacuum. Therefore, the vibration of the tuning fork type crystal resonator is not deteriorated. Further, even when the cross section of the bonding film 6 is exposed to the outside and the end surface thereof corrodes and the occluded metal film 7 is negatively charged, the occluded metal film 7 is hardly corroded, and when gas is generated, the occluded metal Since it is adsorbed by the film 7, the inside of the cavity 4 can be maintained at a predetermined degree of vacuum for a long time.

また、本実施形態では蓋体３に凹部８を形成し、この凹部８の底面に接合膜６と電気的に接続する吸蔵金属膜７を形成したが、これに代えて、基体に凹部を形成し、基体と蓋体の間にキャビティを形成し、蓋体を平坦な板とすることができる。基体の凹部に電子素子を収納し、平坦な板からなる蓋体を凹部の上端面に陽極接合する。この場合も、蓋体のキャビティ側の表面には吸蔵金属膜７を設ける。   Further, in this embodiment, the concave portion 8 is formed in the lid 3 and the occlusion metal film 7 that is electrically connected to the bonding film 6 is formed on the bottom surface of the concave portion 8. Instead, the concave portion is formed in the base body. And a cavity can be formed between a base | substrate and a cover body, and a cover body can be used as a flat board. An electronic element is accommodated in the recess of the base, and a lid made of a flat plate is anodically bonded to the upper end surface of the recess. Also in this case, the occluded metal film 7 is provided on the surface of the lid on the cavity side.

＜電子デバイスの製造方法＞
図４及び図５は本発明の第一実施形態に係る電子デバイス１の製造方法を説明するための図である。図４は製造工程を表し、図５は同時に複数個の電子デバイスを製造する各工程の説明図である。同一の部分又は同一の機能を有する部分には同一の符号を付している。 <Method for manufacturing electronic device>
4 and 5 are views for explaining a method of manufacturing the electronic device 1 according to the first embodiment of the present invention. FIG. 4 shows a manufacturing process, and FIG. 5 is an explanatory diagram of each process for manufacturing a plurality of electronic devices simultaneously. The same portions or portions having the same function are denoted by the same reference numerals.

図５（ａ）は実装工程Ｓ１を表し、基体２に電子素子５を実装した断面模式図である。ここで、基体２はソーダ石灰ガラス、ホウケイ酸ガラス、又はその他のガラスからなるウエハーを使用し、電子素子５としてＭＥＭＳを用いる。まず、基体２の各電子デバイス１に対応する領域に２つの貫通孔を形成する。基体２を軟化点以上の温度に加熱し型に押圧する型成形により複数の貫通孔を同時に形成することができる。また、基体２の表面にマスクを設置し、ガラスエッチング法やサンドブラスト法により複数の貫通孔を同時に形成することができる。次に、貫通孔に電極を埋め込んで貫通電極１３を形成する。例えば貫通孔に金属棒を埋め込み接着剤により固定する、また、貫通孔に印刷法等により導電性接着剤を充填し固化する、或いは、貫通孔に無電解メッキ法により金属材料を堆積し充填する、などの方法により貫通電極１３を形成することができる。次に、基体２の実装側の表面を研磨して平坦面とする。   FIG. 5A shows a mounting step S1 and is a schematic cross-sectional view in which the electronic element 5 is mounted on the base 2. Here, the substrate 2 uses a wafer made of soda-lime glass, borosilicate glass, or other glass, and MEMS is used as the electronic element 5. First, two through holes are formed in a region corresponding to each electronic device 1 of the base 2. A plurality of through-holes can be formed simultaneously by mold forming in which the substrate 2 is heated to a temperature equal to or higher than the softening point and pressed against the mold. Moreover, a mask can be installed on the surface of the base 2 and a plurality of through holes can be formed simultaneously by a glass etching method or a sand blast method. Next, the through electrode 13 is formed by embedding an electrode in the through hole. For example, a metal rod is embedded in the through hole and fixed with an adhesive, and the through hole is filled with a conductive adhesive by a printing method or the like, or solidified by depositing a metal material into the through hole by an electroless plating method. The through electrode 13 can be formed by a method such as. Next, the surface on the mounting side of the substrate 2 is polished to a flat surface.

次に蒸着法やスパッタリング法等により基体２の表面に導電膜を形成し、フォトリソグラフィ及びエッチング法により配線１１を形成する。導電膜としてアルミニウム、金、クロム、モリブデン、鉄合金等の材料を使用することができる。次に、電子素子５としてのＭＥＭＳセンサを実装する。次に、電子素子５と配線１１とをワイヤー１２で接合する。なお、水晶振動子などの電子素子５の場合、配線上に導電性接着剤または金バンプを形成し、その上に電子素子５を実装する。   Next, a conductive film is formed on the surface of the substrate 2 by vapor deposition or sputtering, and wiring 11 is formed by photolithography and etching. A material such as aluminum, gold, chromium, molybdenum, or an iron alloy can be used for the conductive film. Next, a MEMS sensor as the electronic element 5 is mounted. Next, the electronic element 5 and the wiring 11 are joined by the wire 12. In the case of the electronic element 5 such as a crystal resonator, a conductive adhesive or a gold bump is formed on the wiring, and the electronic element 5 is mounted thereon.

図５（ｂ）は凹部形成工程Ｓ２を表し、蓋体３に凹部８を形成する。蓋体３はソーダ石灰ガラス、ホウケイ酸ガラス、又はその他のガラスからなるウエハーを使用する。凹部８は蓋体３を軟化点以上の温度に加熱し型成形により複数同時に形成することができる。あるいは、ウエハーの表面に凹部形成領域が開口するマスクを設置し、ガラスエッチング法やサンドブラスト法等により凹部形成領域のガラスを除去して凹部８を複数同時に形成することができる。なお、凹部８の内側面を傾斜面とし、型成形の際の離型性を向上させている。   FIG. 5B shows the recess forming step S <b> 2, and the recess 8 is formed in the lid 3. The lid 3 uses a wafer made of soda-lime glass, borosilicate glass, or other glass. A plurality of recesses 8 can be formed simultaneously by heating the lid 3 to a temperature above the softening point and molding. Alternatively, a plurality of recesses 8 can be formed at the same time by installing a mask that opens the recess formation region on the surface of the wafer and removing the glass in the recess formation region by a glass etching method or a sandblasting method. In addition, the inner surface of the recessed part 8 is made into the inclined surface, and the mold release property in the case of mold forming is improved.

図５（ｃ）は導電膜堆積工程Ｓ３を表す。まず、凹部８の周囲の上端面を鏡面に研磨する。この場合、凹部８の底面は研磨されないので粗面の状態が維持される。次に、蓋体３の凹部８が形成される側の表面に接合膜６、吸蔵金属膜７の順に堆積する。吸蔵金属膜７としてチタン膜を、接合膜６としてアルミニウム膜をそれぞれスパッタリング法や蒸着法により連続して堆積する。吸蔵金属膜７の材料として、チタンの他にジルコニウム、バナジウム、ハフニウム又はこれら材料のいずれかを含む合金を使用することができる。接合膜６の材料として、アルミニウムの他にシリコン、クロム、モリブデン、鉄合金その他の導電材料又はこれら材料のいずれかを含む複合物を使用することができる。吸蔵金属膜７と接合膜６は各凹部の周囲の上端面や底面、及び上端面と底面の間の内側面の全面に堆積する。例えばチタン膜とアルミニウム膜をそれぞれ５０ｎｍ〜１５０ｎｍ形成する。   FIG. 5C shows the conductive film deposition step S3. First, the upper end surface around the recess 8 is polished into a mirror surface. In this case, since the bottom surface of the recess 8 is not polished, the rough surface state is maintained. Next, the bonding film 6 and the occluded metal film 7 are sequentially deposited on the surface of the lid 3 on the side where the concave portion 8 is formed. A titanium film as the occlusion metal film 7 and an aluminum film as the bonding film 6 are successively deposited by sputtering or vapor deposition. As a material of the occlusion metal film 7, in addition to titanium, zirconium, vanadium, hafnium, or an alloy containing any of these materials can be used. As a material for the bonding film 6, in addition to aluminum, silicon, chromium, molybdenum, iron alloy, other conductive materials, or a composite containing any of these materials can be used. The occluded metal film 7 and the bonding film 6 are deposited on the entire upper surface and bottom surface around each recess and on the entire inner surface between the upper surface and the bottom surface. For example, a titanium film and an aluminum film are formed to 50 nm to 150 nm, respectively.

図５（ｄ）はパターン形成工程Ｓ４を表し、各凹部８の上端面に堆積した吸蔵金属膜７を除去し、接合膜６の表面を露出させる。フォトリソグラフィ及びエッチング法により吸蔵金属膜７を上端面から除去し、凹部８の底面及び内側面に吸蔵金属膜７を残す。このとき、吸蔵金属膜７は、凹部内に露出した状態である。   FIG. 5D shows a pattern forming step S4, in which the occluded metal film 7 deposited on the upper end surface of each recess 8 is removed, and the surface of the bonding film 6 is exposed. The occluded metal film 7 is removed from the upper end surface by photolithography and etching, and the occluded metal film 7 is left on the bottom and inner surfaces of the recess 8. At this time, the occluded metal film 7 is exposed in the recess.

図５（ｅ）は接合工程Ｓ５を表し、凹部８に電子素子５を収納するように蓋体３を基体２の表面に載置し、真空中において蓋体３を基体２に接合する。本実施形態では、蓋体３と基体２は、陽極接合される。陽極接合は、基体２及び蓋体３を２００℃以上の温度に加熱し、蓋体３に堆積した接合膜６を陽極に基体２を陰極にして数百Ｖの電圧を印加し、接合膜６を介して基体２の電子素子５側の表面と蓋体３の上端面とを接合する。この陽極接合の際に発生する酸素ガスがキャビティ４内に残留する場合でも、吸蔵金属膜７のゲッタリング効果により酸素ガスが吸蔵金属膜７に吸着され、所定の真空度に維持される。次に、基体２の蓋体３とは反対側の表面に印刷法により外部電極１４を形成する。外部電極１４は貫通電極１３に電気的に接続する。また、印刷法に代えてメッキ法、蒸着法又はスパッタリング法等により外部電極１４を形成することができる。   FIG. 5E shows a joining step S5, in which the lid 3 is placed on the surface of the base 2 so that the electronic element 5 is accommodated in the recess 8, and the lid 3 is joined to the base 2 in a vacuum. In the present embodiment, the lid 3 and the base 2 are anodically bonded. In the anodic bonding, the base 2 and the lid 3 are heated to a temperature of 200 ° C. or higher, and a voltage of several hundred volts is applied using the bonding film 6 deposited on the lid 3 as an anode and the base 2 as a cathode. The surface of the base 2 on the electronic element 5 side and the upper end surface of the lid 3 are joined together. Even when oxygen gas generated during the anodic bonding remains in the cavity 4, the oxygen gas is adsorbed by the occluded metal film 7 due to the gettering effect of the occluded metal film 7 and is maintained at a predetermined degree of vacuum. Next, the external electrode 14 is formed on the surface of the base 2 opposite to the lid 3 by a printing method. The external electrode 14 is electrically connected to the through electrode 13. Further, the external electrode 14 can be formed by a plating method, a vapor deposition method, a sputtering method or the like instead of the printing method.

本実施形態では、吸蔵金属膜７を接合面から除去して、接合膜６は蓋体３及び基体２と接している。そのため、キャビティ４内の封止を十分に行うことができる。   In the present embodiment, the occlusion metal film 7 is removed from the bonding surface, and the bonding film 6 is in contact with the lid 3 and the substrate 2. Therefore, the inside of the cavity 4 can be sufficiently sealed.

図５（ｆ）は切断工程Ｓ６を表し、ダイシングブレードやダイシングソー等を用いて、或いはガラス表面にスクライブ線を刻印し、スクライブ線に沿って割断して個々の電子デバイス１ａ、１ｂに分離する。この分離した電子デバイス１ａ、１ｂの接合膜６は外部に露出する。外気の水分が接合膜６に付着して腐食が始まると、接合膜６には負電荷が帯電する。しかし、吸蔵金属膜７は腐食し難く、表面に付着する水分や引き寄せられるナトリウムイオンと反応せず、これに伴うガスの発生もない。さらに、仮に吸蔵金属膜７の腐食に伴って水素ガスが発生した場合でも、水素ガスは吸蔵金属膜７により吸着されるので、キャビティ４内は所定の真空度に長期間維持される。   FIG. 5 (f) shows the cutting step S6, using a dicing blade, a dicing saw, or the like, or by marking a scribe line on the glass surface and cleaving along the scribe line to separate the individual electronic devices 1a and 1b. . The separated bonding films 6 of the separated electronic devices 1a and 1b are exposed to the outside. When moisture from outside air adheres to the bonding film 6 and corrosion starts, the bonding film 6 is charged with a negative charge. However, the occluded metal film 7 is hardly corroded, does not react with moisture adhering to the surface or attracted sodium ions, and does not generate gas. Further, even if hydrogen gas is generated due to corrosion of the occluded metal film 7, the hydrogen gas is adsorbed by the occluded metal film 7, so that the inside of the cavity 4 is maintained at a predetermined degree of vacuum for a long time.

なお、導電膜堆積工程及びパターン形成工程において、接合膜６は、蓋体３に接するとともに、蓋体３と接する面と反対の表面を露出するように形成していればよい。また、吸蔵金属膜７は、接合膜６の表面に堆積するのではなく、蓋体３に接して、蓋体３と接する面を露出するように形成されてもよい。   In the conductive film deposition step and the pattern formation step, the bonding film 6 may be formed so as to be in contact with the lid 3 and to expose the surface opposite to the surface in contact with the lid 3. The occluded metal film 7 may be formed so as not to be deposited on the surface of the bonding film 6 but to be in contact with the lid 3 and to expose the surface in contact with the lid 3.

図６は、本発明の第一実施形態に係る電子デバイス１の製造方法を説明するための工程図であり、上記第二実施形態の具体例である。同一の工程には同一の符号を付している。   FIG. 6 is a process diagram for explaining the manufacturing method of the electronic device 1 according to the first embodiment of the present invention, and is a specific example of the second embodiment. The same steps are denoted by the same reference numerals.

基体２に実装する電子素子５は振動や加速度を検出するＭＥＭＳである。蓋体形成工程Ｓ２０を説明する。ソーダ石灰ガラスからなる板状のガラスウエハーを準備する。まず、研磨、洗浄、エッチング工程Ｓ２１においてガラスウエハーを所定の厚さまで研磨し、洗浄した後にエッチング処理を行って最表面の加工変質層を除去する。次に、凹部形成工程Ｓ２において、各電子デバイス１が形成される領域の中央部に加熱プレスの型成形により凹部８を形成する。次に、研磨工程Ｓ２２において、凹部８の周囲の上端面を平坦な鏡面に研磨加工する。次に、導電膜堆積工程Ｓ３において、蓋体３の凹部８を形成した表面にスパッタリング法又は蒸着法により例えばチタンからなる吸蔵金属膜７とアルミニウムからなる接合膜６をそれぞれ５０ｎｍ〜１５０ｎｍの厚さで連続して堆積する。次に、パターン形成工程Ｓ４において、フォトリソグラフィ及びエッチング法により、凹部８の上端面から吸蔵金属膜７を除去する。このようにしてガラスウエハーからなる蓋体３を形成する。   The electronic element 5 mounted on the base 2 is a MEMS that detects vibration and acceleration. The lid forming step S20 will be described. A plate-like glass wafer made of soda-lime glass is prepared. First, in the polishing, cleaning, and etching step S21, the glass wafer is polished to a predetermined thickness, and after cleaning, an etching process is performed to remove the outermost work-affected layer. Next, in the concave portion forming step S2, the concave portion 8 is formed in the central portion of the region where each electronic device 1 is formed by hot press molding. Next, in the polishing step S22, the upper end surface around the recess 8 is polished into a flat mirror surface. Next, in the conductive film deposition step S3, the occlusion metal film 7 made of, for example, titanium and the bonding film 6 made of aluminum, for example, have a thickness of 50 nm to 150 nm on the surface of the lid 3 on which the concave portion 8 is formed by sputtering or vapor deposition. It accumulates continuously with. Next, in the pattern formation step S4, the occluded metal film 7 is removed from the upper end surface of the recess 8 by photolithography and etching. In this way, the lid 3 made of a glass wafer is formed.

電子素子作成工程Ｓ３０を説明する。ＭＥＭＳプロセスを用いて、ＭＥＭＳ材料をフォトリソグラフィ及びエッチング法によりＭＥＭＳの外形形状に加工する。また、ＭＥＭＳ材料に電極を形成し、電子素子を作成する。   The electronic element creation step S30 will be described. Using the MEMS process, the MEMS material is processed into the outer shape of the MEMS by photolithography and etching. In addition, an electrode is formed on the MEMS material to produce an electronic element.

基体形成工程Ｓ４０を説明する。ソーダ石灰ガラスからなる板状のガラスウエハーを準備する。まず、研磨、洗浄、エッチング工程Ｓ４１においてガラスウエハーを所定の厚さまで研磨し、洗浄した後にエッチング処理を行って最表面の加工変質層を除去する。次に、貫通電極形成工程Ｓ４２において加熱プレスの型成形により、或いは表面にマスクを設置後にエッチング処理あるいはサンドブラスにより研削してガラスウエハーの板厚方向に貫通孔を形成する。次に、この貫通孔に導電体を充填して貫通電極１３を形成し、貫通電極１３の両端部及びガラスウエハーの両面を研磨して平坦化する。次に、配線電極形成工程Ｓ４３において、スパッタリング法あるいは蒸着法により基体２の表面に金属膜を堆積し、フォトリソグラフィ及びエッチング法により配線１１にパターニングする。   The substrate forming step S40 will be described. A plate-like glass wafer made of soda-lime glass is prepared. First, in the polishing, cleaning and etching step S41, the glass wafer is polished to a predetermined thickness, and after cleaning, an etching process is performed to remove the outermost work-affected layer. Next, in the through electrode forming step S42, through holes are formed in the thickness direction of the glass wafer by molding by hot pressing, or after setting a mask on the surface and grinding by etching or sandblasting. Next, the through hole is filled with a conductor to form the through electrode 13, and both ends of the through electrode 13 and both surfaces of the glass wafer are polished and flattened. Next, in a wiring electrode forming step S43, a metal film is deposited on the surface of the substrate 2 by sputtering or vapor deposition, and patterned on the wiring 11 by photolithography and etching.

次に、実装工程Ｓ１において、ＭＥＭＳを基体２の表面に実装する。実装の際に、基体２の配線１１とＭＥＭＳとをワイヤボンディングにより接続する。これにより、貫通電極１３とＭＥＭＳの電極とを電気的に接続する。このように多数のＭＥＭＳが実装されるガラスウエハーからなる基体２を形成する。   Next, the MEMS is mounted on the surface of the base 2 in the mounting step S1. At the time of mounting, the wiring 11 of the base 2 and the MEMS are connected by wire bonding. Thereby, the through electrode 13 and the MEMS electrode are electrically connected. In this way, the base body 2 made of a glass wafer on which many MEMS are mounted is formed.

次に、重ね合わせ工程Ｓ１１において、蓋体３の各凹部８に各圧電振動片が収納されるように蓋体３を基体２の上に載置し、上下方向から押圧する。次に、接合工程Ｓ５において、基体２及び蓋体３を２００℃以上の温度に加熱し、蓋体３の接合膜６を陽極にし、基体２を陰極にして数百Ｖの電圧を印加し、接合膜６を介して基体２と蓋体３とを接合する。接合の際には周囲を真空に保持する。次に、外部電極形成工程Ｓ１２において、基体２の蓋体３とは反対側の表面に印刷法により外部電極１４を形成する。次に、切断工程Ｓ６において、接合体の表面にスクライブ線を設け、切断刃を押し当てて割断する、あるいはダイシングブレードやダイシングソーを用いて分割し、個々の電子デバイス１を得る。電気特性検査工程Ｓ１３において、電子デバイス１の特性を測定して検査する。   Next, in the overlaying step S <b> 11, the lid 3 is placed on the base 2 so that the piezoelectric vibrating reeds are accommodated in the concave portions 8 of the lid 3 and pressed from above and below. Next, in the bonding step S5, the base body 2 and the lid body 3 are heated to a temperature of 200 ° C. or higher, the bonding film 6 of the lid body 3 is used as an anode, the base body 2 is used as a cathode, and a voltage of several hundred volts is applied. The substrate 2 and the lid body 3 are bonded via the bonding film 6. When joining, the surroundings are kept in a vacuum. Next, in the external electrode forming step S12, the external electrode 14 is formed on the surface of the base 2 opposite to the lid 3 by a printing method. Next, in the cutting step S6, a scribe line is provided on the surface of the joined body, and the cutting blade is pressed to cleave, or is divided using a dicing blade or a dicing saw, and individual electronic devices 1 are obtained. In the electrical property inspection step S13, the characteristics of the electronic device 1 are measured and inspected.

図７乃至図９を用いて、本実施形態に係る電子デバイス１の変形例について説明する。 図７乃至図９は、本実施形態に係る電子デバイス１の変形例の断面模式図である。なお、図１と同一の構成については、説明を省略する。   Modification examples of the electronic device 1 according to the present embodiment will be described with reference to FIGS. 7 to 9. 7 to 9 are schematic cross-sectional views of modifications of the electronic device 1 according to this embodiment. The description of the same configuration as that in FIG. 1 is omitted.

図７において、吸蔵金属膜７が蓋体３の凹部８の底面及び内側面に設置されている。すなわち、接合膜６は、凹部８の底面及び内側面に設置されず、これらの面から除去されている。   In FIG. 7, the occlusion metal film 7 is provided on the bottom surface and the inner surface of the recess 8 of the lid 3. That is, the bonding film 6 is not installed on the bottom surface and the inner side surface of the recess 8 but is removed from these surfaces.

図８において、吸蔵金属膜７が蓋体３の凹部８の底面に設置されている。すなわち、接合膜６は、凹部８の底面及び内側面に設置されず、これらの面から除去されている。さらに、吸蔵金属膜７は、凹部８の内側面に形成されない。   In FIG. 8, the occlusion metal film 7 is installed on the bottom surface of the recess 8 of the lid 3. That is, the bonding film 6 is not installed on the bottom surface and the inner side surface of the recess 8 but is removed from these surfaces. Further, the occluded metal film 7 is not formed on the inner surface of the recess 8.

図９において、吸蔵金属膜７が蓋体３の凹部８の内側面に設置されている。すなわち、接合膜６は、凹部８の底面及び内側面に設置されず、これらの面から除去されている。さらに、吸蔵金属膜７は、凹部８の底面に形成されない。   In FIG. 9, the occluded metal film 7 is disposed on the inner surface of the recess 8 of the lid 3. That is, the bonding film 6 is not installed on the bottom surface and the inner side surface of the recess 8 but is removed from these surfaces. Further, the occluded metal film 7 is not formed on the bottom surface of the recess 8.

図７乃至図９における吸蔵金属膜７は、フォトリソグラフィ及びエッチング法により、不要箇所を除去して形成される。
本実施形態において、接合膜６は、キャビティ４内部に形成されない。これにより、接合膜６が腐食したとしても、接合膜６の腐食はキャビティ４内部に進行しない。そのため、キャビティ４内部でのガスの発生を抑制することができる。 The occlusion metal film 7 in FIGS. 7 to 9 is formed by removing unnecessary portions by photolithography and etching.
In the present embodiment, the bonding film 6 is not formed inside the cavity 4. Thereby, even if the bonding film 6 is corroded, the corrosion of the bonding film 6 does not proceed into the cavity 4. Therefore, the generation of gas inside the cavity 4 can be suppressed.

＜ＭＥＭＳセンサ＞
本発明の電子デバイスを用いたＭＥＭＳセンサについて説明する。ＭＥＭＳセンサは、例えば、加速度又は振動を検出する。ＭＥＭＳセンサは、電子素子としてＭＥＭＳを使用し、第四実施形態と同様に上記第二又は第三実施形態において説明した製造方法により製造した電子デバイスを組み込んでいる。ＭＥＭＳセンサは、基板と、この基板上に設置した電子デバイスと、信号処理回路とを備えている。電子デバイスは、加速度を検出し、検出した加速度を電気信号に変換し、電気信号を信号処理回路に送る。信号処理回路は、電気信号を増幅、調整など信号処理して出力する。本発明の電子デバイスは、高信頼性でかつ小型に形成することができるので、ＭＥＭＳセンサの全体をコンパクトに構成することができる。 <MEMS sensor>
A MEMS sensor using the electronic device of the present invention will be described. The MEMS sensor detects, for example, acceleration or vibration. The MEMS sensor uses MEMS as an electronic element, and incorporates an electronic device manufactured by the manufacturing method described in the second or third embodiment as in the fourth embodiment. The MEMS sensor includes a substrate, an electronic device installed on the substrate, and a signal processing circuit. The electronic device detects acceleration, converts the detected acceleration into an electrical signal, and sends the electrical signal to a signal processing circuit. The signal processing circuit performs signal processing such as amplification and adjustment on the electrical signal and outputs the processed signal. Since the electronic device of the present invention can be formed with high reliability and a small size, the entire MEMS sensor can be configured compactly.

１、１ａ、１ｂ 電子デバイス
２ 基体
３ 蓋体
４ キャビティ
５ 電子素子
６ 接合膜
７ 吸蔵金属膜
８ 凹部
１１ 配線
１２ ワイヤー
１３ 貫通電極
１４ 外部電極 1, 1a, 1b Electronic device 2 Base 3 Lid 4 Cavity 5 Electronic element 6 Bonding film 7 Occlusion metal film 8 Recess 11 Wiring 12 Wire 13 Through electrode 14 External electrode

Claims (6)

基体と、
前記基体との間にキャビティを形成して前記基体に接合される蓋体と、
前記キャビティに収納される電子素子と、
前記蓋体と前記基体との接合面に設置され、前記蓋体及び前記基体と接する接合膜と、
前記蓋体の前記キャビティ側の表面に形成されるとともに、前記キャビティ内に露出し、前記接合膜と異なる材料で形成され、水素を吸蔵する吸蔵金属膜と、を備える電子デバイス。 A substrate;
A lid that is bonded to the base by forming a cavity between the base and the base;
An electronic element housed in the cavity;
A bonding film that is installed on a bonding surface between the lid and the base, and is in contact with the lid and the base;
An electronic device formed on a surface of the lid on the cavity side, and exposed to the cavity, formed of a material different from the bonding film, and occludes hydrogen. 前記基体及び前記蓋体の少なくとも一方はガラス又はシリコンで形成され、
前記接合膜は、陽極接合用の接合膜で形成され、前記基体と前記蓋体とを陽極接合する請求項１に記載の電子デバイス。 At least one of the base and the lid is formed of glass or silicon;
The electronic device according to claim 1, wherein the bonding film is formed of a bonding film for anodic bonding, and anodic bonding of the base body and the lid body. 前記接合膜は、前記蓋体の前記キャビティ側の表面に設置され、
前記吸蔵金属膜は、前記接合膜の表面上に設置されることを特徴とする請求項１または２に記載の電子デバイス。 The bonding film is installed on the cavity-side surface of the lid,
The electronic device according to claim 1, wherein the occlusion metal film is disposed on a surface of the bonding film. 前記蓋体は中央に前記キャビティを形成する凹部を有し、
前記凹部の周囲の上端面に前記接合膜が形成され、
前記凹部の底面に前記吸蔵金属膜が形成される請求項１〜３のいずれか一項に記載の電子デバイス。 The lid has a recess forming the cavity at the center,
The bonding film is formed on the upper end surface around the recess,
The electronic device according to claim 1, wherein the occluded metal film is formed on a bottom surface of the recess. 前記接合膜はアルミニウム、クロム又はシリコン、モリブデン、鉄合金のいずれかを含み、前記吸蔵金属膜はチタン、ジルコニウム、バナジウム、ハフニウムのいずれかを含む請求項１〜４のいずれか一項に記載の電子デバイス。   5. The bonding film according to claim 1, wherein the bonding film includes any one of aluminum, chromium, silicon, molybdenum, and an iron alloy, and the storage metal film includes any one of titanium, zirconium, vanadium, and hafnium. Electronic devices. 前記電子素子はＭＥＭＳである請求項１〜５のいずれか一項に記載の電子デバイス。   The electronic device according to claim 1, wherein the electronic element is a MEMS.
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