JP2015002209A5 - - Google Patents

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Publication number
JP2015002209A5
JP2015002209A5 JP2013124848A JP2013124848A JP2015002209A5 JP 2015002209 A5 JP2015002209 A5 JP 2015002209A5 JP 2013124848 A JP2013124848 A JP 2013124848A JP 2013124848 A JP2013124848 A JP 2013124848A JP 2015002209 A5 JP2015002209 A5 JP 2015002209A5
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JP
Japan
Prior art keywords
heating unit
support base
support
desorb
push
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2013124848A
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English (en)
Japanese (ja)
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JP6157942B2 (ja
JP2015002209A (ja
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Priority claimed from JP2013124848A external-priority patent/JP6157942B2/ja
Priority to JP2013124848A priority Critical patent/JP6157942B2/ja
Application filed filed Critical
Priority to TW103118338A priority patent/TWI583824B/zh
Priority to US14/301,666 priority patent/US20140370691A1/en
Priority to KR1020140072119A priority patent/KR101598911B1/ko
Publication of JP2015002209A publication Critical patent/JP2015002209A/ja
Publication of JP2015002209A5 publication Critical patent/JP2015002209A5/ja
Priority to US15/619,956 priority patent/US20170275755A1/en
Publication of JP6157942B2 publication Critical patent/JP6157942B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013124848A 2013-06-13 2013-06-13 気相成長装置および気相成長方法 Active JP6157942B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2013124848A JP6157942B2 (ja) 2013-06-13 2013-06-13 気相成長装置および気相成長方法
TW103118338A TWI583824B (zh) 2013-06-13 2014-05-27 氣相成長裝置以及氣相成長方法
US14/301,666 US20140370691A1 (en) 2013-06-13 2014-06-11 Vapor phase growth apparatus and vapor phase growth method
KR1020140072119A KR101598911B1 (ko) 2013-06-13 2014-06-13 기상 성장 장치 및 기상 성장 방법
US15/619,956 US20170275755A1 (en) 2013-06-13 2017-06-12 Vapor phase growth apparatus and vapor phase growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013124848A JP6157942B2 (ja) 2013-06-13 2013-06-13 気相成長装置および気相成長方法

Publications (3)

Publication Number Publication Date
JP2015002209A JP2015002209A (ja) 2015-01-05
JP2015002209A5 true JP2015002209A5 (enExample) 2016-06-30
JP6157942B2 JP6157942B2 (ja) 2017-07-05

Family

ID=52019569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013124848A Active JP6157942B2 (ja) 2013-06-13 2013-06-13 気相成長装置および気相成長方法

Country Status (4)

Country Link
US (2) US20140370691A1 (enExample)
JP (1) JP6157942B2 (enExample)
KR (1) KR101598911B1 (enExample)
TW (1) TWI583824B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6199619B2 (ja) * 2013-06-13 2017-09-20 株式会社ニューフレアテクノロジー 気相成長装置
JP6153401B2 (ja) * 2013-07-02 2017-06-28 株式会社ニューフレアテクノロジー 気相成長装置および気相成長方法
JP6158025B2 (ja) * 2013-10-02 2017-07-05 株式会社ニューフレアテクノロジー 成膜装置及び成膜方法
KR101560623B1 (ko) * 2014-01-03 2015-10-15 주식회사 유진테크 기판처리장치 및 기판처리방법
KR102215965B1 (ko) * 2014-04-11 2021-02-18 주성엔지니어링(주) 가스 분사 장치 및 이를 포함하는 기판 처리 장치
JP5837962B1 (ja) * 2014-07-08 2015-12-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびガス整流部
JP6386901B2 (ja) * 2014-12-17 2018-09-05 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法
JP5963893B2 (ja) * 2015-01-09 2016-08-03 株式会社日立国際電気 基板処理装置、ガス分散ユニット、半導体装置の製造方法およびプログラム
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
USD819580S1 (en) 2016-04-01 2018-06-05 Veeco Instruments, Inc. Self-centering wafer carrier for chemical vapor deposition
USD810705S1 (en) 2016-04-01 2018-02-20 Veeco Instruments Inc. Self-centering wafer carrier for chemical vapor deposition
US10269926B2 (en) * 2016-08-24 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Purging deposition tools to reduce oxygen and moisture in wafers
CN116190216A (zh) 2016-10-03 2023-05-30 应用材料公司 多通道流量比例控制器与处理腔室
KR102096700B1 (ko) * 2017-03-29 2020-04-02 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법
CN107012444B (zh) * 2017-05-05 2023-09-15 宁波工程学院 一种化学气相沉积镀制金刚石膜的设备的吹气装置
US11149350B2 (en) * 2018-01-10 2021-10-19 Asm Ip Holding B.V. Shower plate structure for supplying carrier and dry gas
JP7190894B2 (ja) * 2018-12-21 2022-12-16 昭和電工株式会社 ＳｉＣ化学気相成長装置
KR20250133987A (ko) * 2019-03-11 2025-09-09 어플라이드 머티어리얼스, 인코포레이티드 기판 프로세싱 챔버들을 위한 덮개 조립체 장치 및 방법들
US12060652B2 (en) 2019-11-27 2024-08-13 Sino Nitride Semiconductor Co., Ltd. Linear showerhead for growing GaN

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3044699B2 (ja) * 1991-04-24 2000-05-22 住友電気工業株式会社 気相成長装置および気相成長方法
WO2002045561A2 (en) * 2000-11-20 2002-06-13 Applied Epi, Inc. Surface sealing showerhead for vapor deposition reactor having integrated flow diverters
KR100427996B1 (ko) * 2001-07-19 2004-04-28 주식회사 아이피에스 박막증착용 반응용기 및 그를 이용한 박막증착방법
JP3638936B1 (ja) * 2003-10-06 2005-04-13 シャープ株式会社 気相成長方法および気相成長装置
KR100731164B1 (ko) * 2005-05-19 2007-06-20 주식회사 피에조닉스 샤워헤드를 구비한 화학기상 증착 방법 및 장치
CN101535523B (zh) * 2006-10-06 2012-06-06 维高仪器股份有限公司 用于竖流型转盘式反应器的密度匹配的烷基挤出流
JP2008244014A (ja) * 2007-03-26 2008-10-09 Toshiba Corp 基板処理装置、基板処理方法及び半導体装置の製造方法
JP5034594B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
KR20090013286A (ko) * 2007-08-01 2009-02-05 삼성전자주식회사 반도체 소자 제조설비
US7976631B2 (en) * 2007-10-16 2011-07-12 Applied Materials, Inc. Multi-gas straight channel showerhead

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