JP2014232327A5 - - Google Patents
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- JP2014232327A5 JP2014232327A5 JP2014139563A JP2014139563A JP2014232327A5 JP 2014232327 A5 JP2014232327 A5 JP 2014232327A5 JP 2014139563 A JP2014139563 A JP 2014139563A JP 2014139563 A JP2014139563 A JP 2014139563A JP 2014232327 A5 JP2014232327 A5 JP 2014232327A5
- Authority
- JP
- Japan
- Prior art keywords
- conductive layer
- transistor
- gate electrode
- function
- pixel electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000003990 capacitor Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
Claims (2)
前記第1の導電層と、前記第1のトランジスタのゲート電極と、前記第2のトランジスタのゲート電極とは、タンタル、タングステン、モリブデン、ニオブ、及びチタンのいずれかを有し、The first conductive layer, the gate electrode of the first transistor, and the gate electrode of the second transistor have any one of tantalum, tungsten, molybdenum, niobium, and titanium,
前記絶縁膜は、前記第1の導電層の上方、前記第1のトランジスタのゲート電極の上方、及び、前記第2のトランジスタのゲート電極の上方に設けられており、The insulating film is provided above the first conductive layer, above the gate electrode of the first transistor, and above the gate electrode of the second transistor,
前記第2の導電層と、前記第3の導電層と、前記第4の導電層と、前記第5の導電層とは、前記絶縁膜の上方に設けられ、The second conductive layer, the third conductive layer, the fourth conductive layer, and the fifth conductive layer are provided above the insulating film,
前記第1の導電層は、映像信号を伝達することができる機能を有し、The first conductive layer has a function of transmitting a video signal,
前記第1の導電層は、第1の方向に延びて配置され、The first conductive layer extends in a first direction;
前記第2の導電層は、前記第1の導電層と、前記第1のトランジスタのソース又はドレインの一方とを、電気的に接続することができる機能を有し、The second conductive layer has a function of electrically connecting the first conductive layer and one of a source and a drain of the first transistor,
前記第3の導電層は、前記第2のトランジスタのゲート電極と、前記第1のトランジスタのソース又はドレインの他方とを、電気的に接続することができる機能を有し、The third conductive layer has a function of electrically connecting the gate electrode of the second transistor and the other of the source and the drain of the first transistor,
前記第4の導電層は、前記第2のトランジスタのソース又はドレインの一方と、前記画素電極とを、電気的に接続することができる機能を有し、The fourth conductive layer has a function of electrically connecting one of a source and a drain of the second transistor and the pixel electrode,
前記第1のトランジスタのゲート電極は、前記第5の導電層と電気的に接続され、A gate electrode of the first transistor is electrically connected to the fifth conductive layer;
前記第5の導電層は、前記第1のトランジスタのオン又はオフを選択する信号を伝達することができる機能を有し、The fifth conductive layer has a function of transmitting a signal for selecting on or off of the first transistor;
前記第5の導電層は、前記第1の方向と交差する第2の方向に延びて配置され、The fifth conductive layer is arranged extending in a second direction intersecting the first direction,
前記第2のトランジスタのソース又はドレインの他方は、前記第6の導電層と電気的に接続され、The other of the source and the drain of the second transistor is electrically connected to the sixth conductive layer;
前記第6の導電層は、前記第2のトランジスタを介して、前記画素電極に電流を供給することができる機能を有し、The sixth conductive layer has a function of supplying current to the pixel electrode through the second transistor,
前記保持容量の一対の電極のうちの一方は、前記第2のトランジスタの半導体層とひと続きの半導体層を有し、One of the pair of electrodes of the storage capacitor includes a semiconductor layer of the second transistor and a continuous semiconductor layer;
前記保持容量の一対の電極のうちの他方は、前記第2のトランジスタのゲート電極とひと続きの導電層を有することを特徴とする表示装置。The other of the pair of electrodes of the storage capacitor includes a gate electrode of the second transistor and a continuous conductive layer.
画素部において、前記第1の導電層は、前記画素電極と重なる領域を有し、In the pixel portion, the first conductive layer has a region overlapping with the pixel electrode,
画素部において、前記第6の導電層は、前記画素電極と重なる領域を有し、In the pixel portion, the sixth conductive layer has a region overlapping with the pixel electrode,
画素部において、前記第5の導電層は、前記画素電極と重ならないことを特徴とする表示装置。In the pixel portion, the fifth conductive layer does not overlap with the pixel electrode.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014139563A JP5809333B2 (en) | 2014-07-07 | 2014-07-07 | Active matrix display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014139563A JP5809333B2 (en) | 2014-07-07 | 2014-07-07 | Active matrix display device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013200725A Division JP5613810B2 (en) | 2013-09-27 | 2013-09-27 | Display device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015107366A Division JP6014203B2 (en) | 2015-05-27 | 2015-05-27 | Active matrix display device |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014232327A JP2014232327A (en) | 2014-12-11 |
JP2014232327A5 true JP2014232327A5 (en) | 2015-07-16 |
JP5809333B2 JP5809333B2 (en) | 2015-11-10 |
Family
ID=52125700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2014139563A Expired - Lifetime JP5809333B2 (en) | 2014-07-07 | 2014-07-07 | Active matrix display device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5809333B2 (en) |
-
2014
- 2014-07-07 JP JP2014139563A patent/JP5809333B2/en not_active Expired - Lifetime
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