JP2014229854A5 - - Google Patents
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- Publication number
- JP2014229854A5 JP2014229854A5 JP2013110633A JP2013110633A JP2014229854A5 JP 2014229854 A5 JP2014229854 A5 JP 2014229854A5 JP 2013110633 A JP2013110633 A JP 2013110633A JP 2013110633 A JP2013110633 A JP 2013110633A JP 2014229854 A5 JP2014229854 A5 JP 2014229854A5
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- less
- conversion element
- mpa
- protective film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 claims 8
- 230000001681 protective Effects 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 3
- XCCANNJCMHMXBZ-UHFFFAOYSA-N hydroxyiminosilicon Chemical compound ON=[Si] XCCANNJCMHMXBZ-UHFFFAOYSA-N 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N al2o3 Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
Claims (7)
該基板上に互いに離間して配された複数の画素電極と、
該複数の画素電極上および該画素電極間に連続膜状に配された、光電変換層を含む有機膜と、
該有機膜の上に配された対向電極と、
該対向電極の上に配された保護膜とを有し、
前記画素電極の上面と前記基板の表面との段差が3nm以上、100nm以下であり、
前記画素電極の端部のテーパ角度が、10°以上、90°以下であり、
前記保護膜の内部応力が−600MPa以上、−200MPa未満であり、
前記保護膜の膜厚と内部応力の積が−40,000MPa×nm以上、−14,000Mpa×nm未満である光電変換素子。 A substrate,
A plurality of pixel electrodes spaced apart from each other on the substrate;
An organic film including a photoelectric conversion layer disposed on the plurality of pixel electrodes and between the pixel electrodes in a continuous film;
A counter electrode disposed on the organic film;
A protective film disposed on the counter electrode;
The step between the upper surface of the pixel electrode and the surface of the substrate is 3 nm or more and 100 nm or less,
The taper angle of the end of the pixel electrode is 10 ° or more and 90 ° or less,
The internal stress of the protective film is −600 MPa or more and less than −200 MPa,
The photoelectric conversion element whose product of the film thickness of the said protective film and internal stress is more than -40,000 Mpa * nm and less than -14,000 Mpa * nm.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013110633A JP6128593B2 (en) | 2013-05-27 | 2013-05-27 | Organic photoelectric conversion element and imaging element |
TW103118198A TW201505168A (en) | 2013-05-27 | 2014-05-26 | Organic photoelectric conversion element and image element |
PCT/JP2014/002746 WO2014192274A1 (en) | 2013-05-27 | 2014-05-26 | Organic photoelectric conversion element and imaging element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013110633A JP6128593B2 (en) | 2013-05-27 | 2013-05-27 | Organic photoelectric conversion element and imaging element |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014229854A JP2014229854A (en) | 2014-12-08 |
JP2014229854A5 true JP2014229854A5 (en) | 2016-01-07 |
JP6128593B2 JP6128593B2 (en) | 2017-05-17 |
Family
ID=51988326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013110633A Active JP6128593B2 (en) | 2013-05-27 | 2013-05-27 | Organic photoelectric conversion element and imaging element |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP6128593B2 (en) |
TW (1) | TW201505168A (en) |
WO (1) | WO2014192274A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5835450B2 (en) | 2013-11-27 | 2015-12-24 | 株式会社デンソー | Rotating machine control device |
TWI625634B (en) * | 2015-06-25 | 2018-06-01 | 華邦電子股份有限公司 | Method for estimating stress of electronic component |
CN106326616B (en) | 2015-06-25 | 2019-01-15 | 华邦电子股份有限公司 | The stress evaluation method of electronic component |
JP2017168806A (en) * | 2015-12-21 | 2017-09-21 | ソニー株式会社 | Imaging device, solid-state imaging apparatus, and electronic device |
WO2017169757A1 (en) * | 2016-03-29 | 2017-10-05 | ソニー株式会社 | Solid-state imaging element, method for producing same and electronic device |
US11751426B2 (en) * | 2016-10-18 | 2023-09-05 | Universal Display Corporation | Hybrid thin film permeation barrier and method of making the same |
WO2023189040A1 (en) * | 2022-03-29 | 2023-10-05 | パナソニックIpマネジメント株式会社 | Photoelectric conversion element and imaging element |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011228648A (en) * | 2010-03-31 | 2011-11-10 | Fujifilm Corp | Imaging device |
JP2013055117A (en) * | 2011-09-01 | 2013-03-21 | Fujifilm Corp | Method of manufacturing photoelectric conversion element, and method of manufacturing imaging element |
JP5730265B2 (en) * | 2011-10-31 | 2015-06-03 | 富士フイルム株式会社 | Image sensor |
JP5800682B2 (en) * | 2011-10-31 | 2015-10-28 | 富士フイルム株式会社 | Method for manufacturing photoelectric conversion element and method for manufacturing imaging element |
-
2013
- 2013-05-27 JP JP2013110633A patent/JP6128593B2/en active Active
-
2014
- 2014-05-26 TW TW103118198A patent/TW201505168A/en unknown
- 2014-05-26 WO PCT/JP2014/002746 patent/WO2014192274A1/en active Application Filing
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