JP2014229854A5 - - Google Patents

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Publication number
JP2014229854A5
JP2014229854A5 JP2013110633A JP2013110633A JP2014229854A5 JP 2014229854 A5 JP2014229854 A5 JP 2014229854A5 JP 2013110633 A JP2013110633 A JP 2013110633A JP 2013110633 A JP2013110633 A JP 2013110633A JP 2014229854 A5 JP2014229854 A5 JP 2014229854A5
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JP
Japan
Prior art keywords
photoelectric conversion
less
conversion element
mpa
protective film
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Application number
JP2013110633A
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Japanese (ja)
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JP2014229854A (en
JP6128593B2 (en
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Publication date
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Priority to JP2013110633A priority Critical patent/JP6128593B2/en
Priority claimed from JP2013110633A external-priority patent/JP6128593B2/en
Priority to TW103118198A priority patent/TW201505168A/en
Priority to PCT/JP2014/002746 priority patent/WO2014192274A1/en
Publication of JP2014229854A publication Critical patent/JP2014229854A/en
Publication of JP2014229854A5 publication Critical patent/JP2014229854A5/ja
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Publication of JP6128593B2 publication Critical patent/JP6128593B2/en
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Claims (7)

基板と、
該基板上に互いに離間して配された複数の画素電極と、
該複数の画素電極上および該画素電極間に連続膜状に配された、光電変換層を含む有機膜と、
該有機膜の上に配された対向電極と、
該対向電極の上に配された保護膜とを有し、
前記画素電極の上面と前記基板の表面との段差が3nm以上、100nm以下であり、
前記画素電極の端部のテーパ角度が、10°以上、90°以下であり、
前記保護膜の内部応力が−600MPa以上、−200MPa未満であり、
前記保護膜の膜厚と内部応力の積が−40,000MPa×nm以上、−14,000Mpa×nm未満である光電変換素子。
A substrate,
A plurality of pixel electrodes spaced apart from each other on the substrate;
An organic film including a photoelectric conversion layer disposed on the plurality of pixel electrodes and between the pixel electrodes in a continuous film;
A counter electrode disposed on the organic film;
A protective film disposed on the counter electrode;
The step between the upper surface of the pixel electrode and the surface of the substrate is 3 nm or more and 100 nm or less,
The taper angle of the end of the pixel electrode is 10 ° or more and 90 ° or less,
The internal stress of the protective film is −600 MPa or more and less than −200 MPa,
The photoelectric conversion element whose product of the film thickness of the said protective film and internal stress is more than -40,000 Mpa * nm and less than -14,000 Mpa * nm.
前記保護膜が、酸化アルミニウム層および酸窒化珪素層とから構成される請求項1記載の光電変換素子。   The photoelectric conversion element according to claim 1, wherein the protective film includes an aluminum oxide layer and a silicon oxynitride layer. 前記保護膜が、酸窒化珪素層のみからなる請求項1記載の光電変換素子。   The photoelectric conversion element according to claim 1, wherein the protective film comprises only a silicon oxynitride layer. 前記内部応力が−400MPa以上、−200MPa未満である請求項1から3いずれか1項記載の光電変換素子。   The photoelectric conversion element according to claim 1, wherein the internal stress is −400 MPa or more and less than −200 MPa. 前記傾斜角度が30°以上、90°以下である請求項1からいずれか1項記載の光電変換素子。 The inclination angle is 30 ° or more, the photoelectric conversion element of any of the preceding claims, 1 is 90 ° or less. 前記段差が5nm以上、40nm以下である請求項1からいずれか1項記載の光電変換素子。 The step is 5nm or more, photoelectric conversion element according to claim 1 to 5 any one of claims is 40nm or less. 請求項1からいずれか1項記載の有機光電変換素子を備えた撮像素子。 The image pick-up element provided with the organic photoelectric conversion element of any one of Claim 1 to 6 .
JP2013110633A 2013-05-27 2013-05-27 Organic photoelectric conversion element and imaging element Active JP6128593B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2013110633A JP6128593B2 (en) 2013-05-27 2013-05-27 Organic photoelectric conversion element and imaging element
TW103118198A TW201505168A (en) 2013-05-27 2014-05-26 Organic photoelectric conversion element and image element
PCT/JP2014/002746 WO2014192274A1 (en) 2013-05-27 2014-05-26 Organic photoelectric conversion element and imaging element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013110633A JP6128593B2 (en) 2013-05-27 2013-05-27 Organic photoelectric conversion element and imaging element

Publications (3)

Publication Number Publication Date
JP2014229854A JP2014229854A (en) 2014-12-08
JP2014229854A5 true JP2014229854A5 (en) 2016-01-07
JP6128593B2 JP6128593B2 (en) 2017-05-17

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Family Applications (1)

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JP2013110633A Active JP6128593B2 (en) 2013-05-27 2013-05-27 Organic photoelectric conversion element and imaging element

Country Status (3)

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JP (1) JP6128593B2 (en)
TW (1) TW201505168A (en)
WO (1) WO2014192274A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5835450B2 (en) 2013-11-27 2015-12-24 株式会社デンソー Rotating machine control device
TWI625634B (en) * 2015-06-25 2018-06-01 華邦電子股份有限公司 Method for estimating stress of electronic component
CN106326616B (en) 2015-06-25 2019-01-15 华邦电子股份有限公司 The stress evaluation method of electronic component
JP2017168806A (en) * 2015-12-21 2017-09-21 ソニー株式会社 Imaging device, solid-state imaging apparatus, and electronic device
WO2017169757A1 (en) * 2016-03-29 2017-10-05 ソニー株式会社 Solid-state imaging element, method for producing same and electronic device
US11751426B2 (en) * 2016-10-18 2023-09-05 Universal Display Corporation Hybrid thin film permeation barrier and method of making the same
WO2023189040A1 (en) * 2022-03-29 2023-10-05 パナソニックIpマネジメント株式会社 Photoelectric conversion element and imaging element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011228648A (en) * 2010-03-31 2011-11-10 Fujifilm Corp Imaging device
JP2013055117A (en) * 2011-09-01 2013-03-21 Fujifilm Corp Method of manufacturing photoelectric conversion element, and method of manufacturing imaging element
JP5730265B2 (en) * 2011-10-31 2015-06-03 富士フイルム株式会社 Image sensor
JP5800682B2 (en) * 2011-10-31 2015-10-28 富士フイルム株式会社 Method for manufacturing photoelectric conversion element and method for manufacturing imaging element

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