JP2014229783A - Semiconductor light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve high rendition effects using light in accordance with a mode of irradiation light enriched in variety by changing an irradiation direction or a hue of the irradiation light in response to heat generation when lighting of a semiconductor light-emitting element that serves as a light emission source, and to downsize a device in which a semiconductor light-emitting device is mounted.SOLUTION: One side ends of paired lead electrodes 3 and 4 which are arranged in parallel with each other, are accommodated with a transparent cover 5 including a first light-emitting plane 5a and a second light-emitting plane 5b in an air-tight state. In the one end side of one lead electrode 3 accommodated within the transparent cover 5 in the air-tight state, a predetermined length from a distal end is made to serve as a thermal displacement part 3a formed of a thermal displacement member of a bimetal structure where two kinds of metal members with different coefficients of thermal expansion are bonded, and a semiconductor light-emitting element 2 that serves as a light emission source is mounted on a top face of the distal end of the thermal displacement part 3a.

Description

  The present invention relates to a semiconductor light-emitting device, and more particularly, to a semiconductor light-emitting device capable of changing the light irradiation direction and hue in accordance with heat generated when a semiconductor light-emitting element serving as a light-emitting source is turned on.

  Conventionally, as a semiconductor light-emitting device of this type (particularly, the direction of light irradiation is changed according to the heat generated during the lighting of the semiconductor light-emitting element), for example, Patent Document 1 shows “ventilator” as shown in FIGS. A configuration is disclosed.

  That is, the opening / closing means 82 that opens and closes the duct 81 that passes through the wall 85 of the building and communicates with the indoor 90 and the outdoor 95 of the ventilation device 80 installed in the building is formed of a shape memory material and can be displaced. The LED light source 84 is mounted on the part 83 and the movable part 83.

  When the movable portion 83 is heated to a temperature equal to or higher than the reverse transformation start temperature by the heat generated when the LED light source 84 is turned on, the movable portion 83 is in the first state shown in FIG. When the efficiency reaches its maximum and is cooled to a temperature lower than the reverse transformation start temperature, the second state shown in FIGS. 12 and 13 is obtained due to the weight of the LED light source 84 and the weight of the movable portion 83.

  As the temperature of the movable portion 83 is lower than the reverse transformation start temperature, the amount of deflection (deformation amount) increases, and the state of the duct 81 shown in FIG. 13 is higher than that of the duct 81 shown in FIG. This shows the state when the temperature is low.

  In this case, the cooling of the movable portion 83 is performed by the outside air flowing into the duct 81. When the temperature of the outside air is relatively high (for example, in summer), the cooling of the movable portion 83 is suppressed, and the movable portion 83 is 1, the opening degree of the duct 81 is maximized, and the outside air is taken into the room 90 at the maximum. On the other hand, when the temperature of the outside air is relatively low (for example, in winter), the cooling of the movable portion 83 is promoted, and the movable portion 83 becomes the second state due to the weight of the LED light source 84 and the dead weight of the movable portion 83. The opening degree of 81 is smaller than that in the first state, whereby the air in the room 90 heated by heating is prevented from flowing out to the outdoor 95 through the duct 81, and at the same time, the cooled outdoor air is discharged from the indoor 90. By being prevented from flowing into the room 90, the room 90 is maintained in a comfortable environment.

  In addition, the emitted light from the LED light source 84 functions as indirect illumination for the indoor 90 and the outdoor 95 to obtain an aesthetic effect and a healing effect, as well as a crime prevention effect, and a pilot lamp for displaying the operation of the ventilator 80. And a display function indicating the degree of opening of the duct 81.

JP 2007-315679 A

  By the way, the ventilator 80 disclosed in the above-mentioned patent document 1 has a plurality of LED light sources 84 mounted on the movable portion 83 constituting the opening / closing means 82 of the duct 81, for example. The incident light is irradiated in the same direction by the displacement of the movable portion 83, and the hue does not change. That is, the plurality of LED light sources 84 merely change the irradiation direction of the emitted light in units of the movable portion 83, and the light effect is poor. In addition, the movable part 83 may fluctuate with the heat generation of electronic components (not shown) other than the LED light source 84 mounted on the movable part 83, and the control of the rendering effect may become a problem. It was.

  Moreover, since the movable part 83 requires a displacement area | region (displacement space), size reduction of the ventilation apparatus 80 will be inhibited.

  Therefore, the present invention was devised in view of the above problems, and the object of the present invention is to change the irradiation direction and hue of the irradiation light according to the heat generated when the semiconductor light emitting element as the light source is turned on. As a result, it is possible to realize a high stage effect by light according to a variety of irradiation light modes and to reduce the size of a device equipped with a semiconductor light emitting device.

  In order to solve the above-described problem, the invention described in claim 1 of the present invention includes a plurality of lead electrodes, a semiconductor light emitting element mounted on at least one of the plurality of lead electrodes, and the semiconductor light emitting element. A transparent cover having a plurality of light emitting surfaces through which light emitted from the semiconductor light emitting element is transmitted, wherein one end side of each of the plurality of lead electrodes is hermetically accommodated, and the semiconductor light emitting element is mounted The lead electrode is formed of a heat displacement member having a bimetal structure in which two kinds of metal members having different coefficients of thermal expansion are joined from the tip on the one end side to a predetermined length, and the semiconductor light emitting element is the heat displacement member. It is characterized by being implemented above.

  According to a second aspect of the present invention, in the first aspect, at least one of the plurality of light exit surfaces of the transparent cover is excited by the light emitted from the semiconductor light emitting element and has a wavelength. It has the wavelength conversion member which discharge | releases the converted light, It is characterized by the above-mentioned.

  Further, in the invention described in claim 3 of the present invention, when there are a plurality of light emitting surfaces having the wavelength conversion member in claim 1 or 2, the single color having the same hue of the wavelength-converted light is provided. It is composed of two or more types of wavelength conversion members having different wavelength conversion members or light hues.

  Further, in the invention described in claim 4 of the present invention, in any one of claims 1 to 3, when there are a plurality of the semiconductor light emitting elements, one kind of semiconductor light emitting element or light emitting color having the same emission color is provided. It is characterized by being composed of two or more types of semiconductor light emitting elements having different values.

  Further, in the invention described in claim 5 of the present invention, in any one of claims 1 to 4, either the inert gas or the inert liquid is sealed in the transparent cover. It is characterized by.

  The semiconductor light-emitting device of the present invention mounts a semiconductor light-emitting element serving as a light-emitting source on a heat-displacement member having a bimetallic structure in which two types of metal members having different thermal expansion coefficients are joined, thereby generating heat during light emission of the semiconductor light-emitting element. The thermal displacement member is displaced according to the amount alone, and the optical axis direction of the semiconductor light emitting element is changed, thereby changing the irradiation direction of the irradiation light.

  Further, the wavelength conversion member is arranged in a predetermined direction in which the optical axis of the semiconductor light emitting element faces, so that irradiation light having a hue different from the emission color of the semiconductor light emitting element is irradiated.

  As a result, there are many variations of the light effects, which can be controlled easily, and further downsizing of devices equipped with semiconductor light-emitting devices is possible.

It is a top view which shows the state of 1st Embodiment. It is a sectional side view of FIG. It is a top view which shows the other state of 1st Embodiment. FIG. 4 is a side sectional view of FIG. 3. It is a sectional side view which shows the state of 2nd Embodiment. It is a sectional side view which shows the other state of 2nd Embodiment. It is a sectional side view which shows the state of 3rd Embodiment. It is a sectional side view which shows the other state of 3rd Embodiment. It is a sectional side view which shows the state of 4th Embodiment. It is a sectional side view which shows the other state of 4th Embodiment. It is explanatory drawing of a prior art example. Similarly, it is explanatory drawing of a prior art example. Similarly, it is explanatory drawing of a prior art example.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to FIGS. 1 to 10 (the same parts are denoted by the same reference numerals). The embodiments described below are preferable specific examples of the present invention, and thus various technically preferable limitations are given. However, the scope of the present invention particularly limits the present invention in the following description. Unless stated to the effect, the present invention is not limited to these embodiments.

  1 to 4 are diagrams for explaining a first embodiment relating to a semiconductor light emitting device of the present invention. Of these, FIG. FIG. 2 is a side cross-sectional view of FIG. 1, and FIG. 3 is a top view showing a state when the conduction current of the semiconductor light emitting element of the light source is relatively large. 4 is a side sectional view of FIG.

  1 and 2, the semiconductor light emitting device 1 of the present embodiment energizes a semiconductor light emitting element (specifically, for example, an LED element, hereinafter referred to as “LED element”) 2 and an LED element 2 as a light source. A pair of lead electrodes 3, 4, the LED element 2, and a transparent cover 5 that hermetically accommodates one end sides of the pair of lead electrodes 3, 4, and an encapsulant 6 enclosed in the transparent cover 5. .

  The pair of lead electrodes 3 and 4 are all made of metal and are arranged in parallel with each other at a predetermined interval except for a part. One lead electrode 3 has one end side that is airtightly accommodated in the transparent cover 5. One type of metal with good thermal conductivity that has a bimetallic structure formed by joining two types of metal members with different thermal expansion coefficients from the tip to a predetermined length, and the other parts do not have a bimetallic structure It is formed with a member. The other lead electrode 4 is formed of a single metal member having a good thermal conductivity that does not have a bimetal structure over its entire length.

  A thermal displacement portion 3a formed of a bimetallic thermal displacement member of the lead electrode 3 extends toward the lead electrode 4 facing the lead electrode 3, and has a relatively high coefficient of thermal expansion. The metal member 3aa is located on the lower side, and the metal member 3ab having a relatively low coefficient of thermal expansion is located on the upper side.

  The LED element 2 of the light emitting source is mounted on the top surface of the tip of the metal member 3ab constituting the thermal displacement part 3a via a conductive bonding member (not shown), and the lower electrode of the LED element 2 and the lead electrode 3 are connected to each other. Electrically connected. For example, a silver paste, a silver tin paste, solder, or a metal bump is used for the conductive bonding member.

  Also, the other end of the bonding wire 7 whose one end is bonded to the upper electrode of the LED element 2 is bonded to the upper end surface of the lead electrode 4 so that the upper electrode of the LED element 2 and the lead electrode 4 are electrically connected. Yes. For the bonding wire 7, for example, a metal material having good conductivity and electrode bonding property such as gold or aluminum is used.

  The transparent cover 5 is formed of glass, polycarbonate resin, silicone resin, or the like, and includes a planar first light emitting surface 5a located above and an annular inclined surface extending obliquely downward from the outer peripheral edge of the first light emitting surface 5a. The second light emitting surface 5b is formed, and the lead electrode 3 side of the heat displacement part 3a, the bonding side of the bonding wire 7 of the lead electrode 4, the LED element 2 and the bonding wire 7 are accommodated in an airtight manner. Therefore, the other end side of each of the lead electrodes 3 and 4 is led out through the lower surface of the transparent cover 5 in an airtight manner.

  The hermetically sealed transparent cover 5 is filled with either or both of an inert gas and an inert liquid. In this case, both the inert gas and the inert liquid are electrically insulating, do not cause a reaction with the composition material of the LED element 2, and can absorb the emitted light from the LED element 2. And a material having good thermal conductivity is used.

  Specifically, as the inert gas, for example, nitrogen gas or a rare gas such as helium gas, argon gas, and krypton gas is used, and as the inert liquid, for example, ether, alcohol, ethylene glycol, and fluorine-based inert gas. An active liquid is used.

  By filling the transparent cover 5 with either or both of the above inert gas and inert liquid, the LED element 2 can be efficiently radiated to suppress the temperature rise of the LED element 2 when the LED element 2 is turned on (light emission). Therefore, while suppressing the decrease in the amount of emitted light due to the decrease in the light emission efficiency of the LED element 2 due to the temperature increase of the LED element 2, similarly, the element life is shortened due to the deterioration of the LED element 2 due to the temperature increase of the LED element 2. Suppress.

  At the same time, when the energization current of the LED element 2 is changed, the temperature of the thermal displacement portion 3a of the lead electrode 3 on which the LED element 2 is mounted quickly changes following the change of the current, and the change in the amount of displacement also changes accordingly. There is less delay in response to current changes. In particular, there is a remarkable effect when the current is reduced.

  In the semiconductor light emitting device 1 in a state where the energization current to the LED element 2 is relatively small, the lead electrode on which the LED element 2 is mounted because the heat generation when the LED element 2 is lit (during light emission) is relatively small. 3 is relatively small, and the amount of displacement of the thermal displacement portion 3a is relatively small.

  Therefore, the thermal displacement portion 3a extends in a substantially vertical and substantially planar manner toward the lead electrode 4 facing the lead electrode 3, and the tip portion of the metal member 3ab of the thermal displacement portion 3a. The LED element 2 mounted on the upper surface is directed toward the first light emitting surface 5a of the transparent cover 5 with the optical axis X on the upper side. Therefore, the emitted light from the LED element 2 passes through the first light emitting surface 5a of the transparent cover 5 and is irradiated as the irradiation light L in the direction directly above the LED element 2.

  On the other hand, in the semiconductor light emitting device 1 in a state where the energization current to the LED element 2 is relatively large, as shown in FIGS. 3 and 4, the heat generation when the LED element 2 is lit (during light emission) is relatively. Therefore, the temperature rise of the thermal displacement portion 3a of the lead electrode 3 on which the LED element 2 is mounted is relatively large. Therefore, in the thermal displacement portion 3a, the metal member 3aa having a relatively high coefficient of thermal expansion located on the lower side is curved toward the side (upper side) of the metal member 3ab having a relatively low coefficient of thermal expansion located on the upper side. Displacement (curvature displacement).

  Then, the LED element 2 mounted on the top surface of the distal end portion of the metal member 3ab of the thermal displacement portion 3a faces the second light emitting surface 5b of the transparent cover 5 with the optical axis X obliquely upward. Therefore, the emitted light from the LED element 2 passes through the second light emitting surface 5 b of the transparent cover 5 and is irradiated as an irradiation light L toward the obliquely upper side of the LED element 2.

  As described above, in the first embodiment, the LED mounting portion (thermal displacement portion 3a) for mounting the LED element 2 serving as the light source of the semiconductor light emitting device 1 is replaced with two types of metal members 3aa and 3ab having different thermal expansion coefficients. At the same time, the transparent cover 5 that houses the LED element 2 was provided with two light emitting surfaces, a first light emitting surface 5a and a second light emitting surface 5b.

  Then, the amount of heat generated by the LED element 2 changes by controlling the energization current when the LED element is turned on (light emission), and the amount of curvature displacement of the thermal displacement portion 3a changes due to the accompanying temperature change of the thermal displacement portion 3a. As a result, the direction of the optical axis of the LED element 2 mounted on the thermal displacement portion 3a is changed, and the emitted light from the LED element 2 is transmitted to either the first light emitting surface 5a or the second light emitting surface 5b of the transparent cover 5. It will be emitted from.

  That is, the irradiation direction of the irradiation light of the semiconductor light emitting device 1 can be changed by controlling the energization current of the LED element 2. Thereby, the effect of the light by the semiconductor light-emitting device 1 is easily realizable.

  Note that the metal materials 3aa and 3ab constituting the thermal displacement portion 3a are desired to be generated by light generation (light emission) when a predetermined energization current is passed through the LED element 2 and light emitted from the LED element 2 at that time. Is set in consideration of the irradiation direction.

  5 and 6 are diagrams illustrating a second embodiment of the semiconductor light emitting device according to the present invention. Of these, FIG. FIG. 6 is a side sectional view showing a state when the energization current is small, and FIG. 6 is a side sectional view showing a state when the energization current of the LED element of the light source is relatively large.

  The second embodiment is different from the first embodiment in that one of the first light emitting surface 5a and the second light emitting surface 5b of the transparent cover 5 (in the case of the second embodiment). A wavelength conversion member 8 such as a phosphor is provided on the inner surface of the first light emitting surface 5a). 5 and 6, the wavelength conversion member 8 is applied to the inner surface of the first light exit surface 5a, and the applied wavelength conversion member 8 is excited by the light emitted from the LED element 2 and emits the desired wavelength converted light. .

  Specifically, the blue LED element 2 (B) that emits blue light is used as the LED element 2, and the wavelength conversion member 8 is excited by the blue light emitted from the blue LED element 2 (B) to emit blue light. A yellow phosphor that converts the wavelength to a complementary yellow light was used.

  Then, in the semiconductor light emitting device 1 (see FIG. 5) in a state where the energization current to the LED element 2 (B) is relatively small, the thermal displacement portion 3a is a lead electrode as in the first embodiment. The blue LED element 2 is mounted on the top surface of the tip of the metal member 3ab of the thermal displacement portion 3a, extending substantially vertically and substantially flatly toward the side of the lead electrode 4 facing the surface 3. B) points in the direction of the first light exit surface 5a of the transparent cover 5 whose optical axis X is above. Therefore, the emitted light from the LED element 2 (B) is transmitted through the first light emitting surface 5a of the transparent cover 5 and irradiated as the irradiation light L in the direction directly above the LED element 2 (B).

  At this time, the wavelength conversion member 8 made of a yellow phosphor is applied to the inner surface of the first light emitting surface 5a of the transparent cover 5, and the irradiation light L from the first light emitting surface 5a is the blue LED element 2 ( B) is a white color obtained by additive color mixing of yellow light, which is part of the blue light emitted from B) and wavelength-converted by exciting the yellow phosphor, and part of the blue light emitted from the blue LED element 2 (B). It becomes light.

  On the other hand, in the semiconductor light emitting device 1 (see FIG. 6) in a state where the energization current to the LED element 2 (B) is relatively large, the thermal displacement portion 3a is located on the lower side as in the first embodiment. The metal member 3aa having a relatively large coefficient of thermal expansion located at the position is displaced in a curved shape (curved displacement) toward the side (upper side) of the metal member 3ab having a relatively small coefficient of thermal expansion located on the upper side. The LED element 2 (B) mounted on the top surface of the tip of the metal member 3ab of the displacement portion 3a is directed in the direction of the second light emitting surface 5b of the transparent cover 5 whose optical axis X is obliquely upward. Therefore, the emitted light from the LED element 2 (B) is transmitted through the second light emitting surface 5b of the transparent cover 5 and irradiated as an irradiation light L obliquely upward of the LED element 2 (B).

  At this time, the wavelength conversion member is not applied to the second light emitting surface 5b of the transparent cover 5, and the irradiation light L from the second light emitting surface 5b is blue light emitted from the blue LED element 2 (B). Is irradiated as it is.

  As described above, in the second embodiment, an LED mounting portion that mounts a blue LED element 2 (B) as a blue LED element 2 (B) that emits blue light is used as an LED element that is a light source of the semiconductor light emitting device 1. The (thermal displacement portion 3a) has a bimetallic structure in which two types of metal members 3aa and 3ab having different thermal expansion coefficients are joined, and at the same time, the first light emitting surface 5a is placed on the transparent cover 5 that houses the blue LED element 2 (B). And a second light emitting surface 5b, and a wavelength conversion member such as a phosphor on the inner surface of one of the light emitting surfaces (first light emitting surface 5a in the case of the second embodiment). 8 was applied.

  Then, the amount of heat generated by the blue LED element 2 (B) is changed by controlling the energization current when the LED element is turned on (light emission), and the amount of bending displacement of the thermal displacement part 3 a is changed by the temperature change of the thermal displacement part 3 a. change. As a result, the optical axis direction of the blue LED element 2 (B) mounted on the thermal displacement part 3 a is changed, and the emitted light from the LED element 2 (B) is emitted from the first light emitting surface 5 a of the transparent cover 5. Irradiated as either white light or blue light from the second light exit surface 5b.

  That is, by controlling the energization current of the LED element 2 (B), the hue can be changed together with the irradiation direction of the irradiation light of the semiconductor light emitting device 1. Thereby, the light effect by the semiconductor light emitting device 1 of the second embodiment can be further enhanced than the light effect by the semiconductor light emitting device 1 of the first embodiment.

  In addition, the metal materials 3aa and 3ab constituting the thermal displacement portion 3a are similar to the first embodiment, and heat generation during lighting (light emission) when a predetermined energization current is passed through the LED element 2 (B), It is set in consideration of the desired irradiation direction by the light emitted from the LED element 2 (B) at that time. 5 and 6, the wavelength conversion member 8 is applied to the inner surface of the first light exit surface 5a, but the present invention is not limited to this. It is also possible to arrange the wavelength conversion member 8 outside the light exit surface, and the material constituting the light exit surface may include the wavelength conversion member.

  7 and 8 are diagrams for explaining a third embodiment relating to the semiconductor light emitting device of the present invention. Among them, FIG. 7 shows that no current flows in the LED element of the light emitting source, or relatively FIG. 8 is a side cross-sectional view showing a state when the energization current is small, and FIG. 8 is a side cross-sectional view showing a state when the energization current of the LED element of the light emitting source is relatively large.

  FIG. 7 shows that the third embodiment is different from the first embodiment in that each of the pair of lead electrodes 3, 4 is airtightly accommodated in the transparent cover 5 from the tip to a predetermined length. It is formed of a thermal displacement member having a bimetallic structure in which two types of metal members having different thermal expansion coefficients are joined, and the other portions are formed of a single type of metal member having no thermal conductivity and having no bimetallic structure.

  The thermal displacement portions 3a and 4a formed of bimetal-structured thermal displacement members of the lead electrodes 3 and 4 are extended so that the tip portions face each other, and the thermal displacement portion 3a is relatively The metal member 3aa having a large coefficient of thermal expansion is located on the upper side, the metal member 3ab having a relatively small coefficient of thermal expansion is located on the lower side, and the metal member 4aa having a relatively large coefficient of thermal expansion is located on the thermal displacement portion 4a. Is located on the upper side, and the metal member 4ab having a relatively low coefficient of thermal expansion is located on the lower side.

  The LED elements 2a and 2b of the light emitting source are provided on the top surfaces of the respective distal ends of the metal member 3aa constituting the thermal displacement portion 3a and the metal member 4aa constituting the thermal displacement portion 4a via a conductive bonding member (not shown). Are mounted, and the lower electrode of the LED element 2a and the lead electrode 3 and the lower electrode of the LED element 2b and the lead electrode 4 are electrically connected. For example, a silver paste, a silver tin paste, solder, or a metal bump is used for the conductive bonding member.

  Also, the other end of the bonding wire 7 whose one end is bonded to the upper electrode of the LED element 2a is bonded to the upper end surface of the metal member 4aa of the thermal displacement portion 4a of the lead electrode 4, and the upper electrode and the lead of the LED element 2a are connected. Similarly, the electrode 4 is electrically connected, and similarly, the other end of the bonding wire 7 whose one end is joined to the upper electrode of the LED element 2 b is the upper end surface of the metal member 3 aa of the thermal displacement portion 3 a of the lead electrode 3. The upper electrode of the LED element 2b and the lead electrode 3 are electrically connected. For the bonding wire 7, for example, a metal material having good conductivity and electrode bonding property such as gold or aluminum is used.

  Therefore, in the semiconductor light emitting device 1 in a state where the energization current to each of the LED elements 2a and 2b is relatively small, the heat generation when the LED elements 2a and 2b are turned on (during light emission) is relatively small. The temperature increase of the thermal displacement portion 3a of the lead electrode 3 on which the LED element 2a is mounted and the thermal displacement portion 4a of the lead electrode 4 on which the LED element 2b is mounted is relatively small, and the displacement amount of the thermal displacement portions 3a, 4a is also relatively There are few.

  Therefore, the thermal displacement portions 3a and 4a of the lead electrodes 3 and 4 are in a state of extending so that the tip portions face each other, and the respective metal members 3aa of the thermal displacement portions 3a and 4a. The LED elements 2a and 2b mounted on the top surface of the tip end of 4aa are oriented in the direction of the first light emitting surface 5a of the transparent cover 5 with their optical axes Xa and Xb being upward. Therefore, the emitted light from the LED elements 2a and 2b passes through the first light emitting surface 5a of the transparent cover 5 and is irradiated as the irradiation light L toward the direction directly above the LED elements 2a and 2b, respectively.

  On the other hand, in the semiconductor light-emitting device 1 (see FIG. 8) in a state where the energization current to the LED element 2 is relatively large, heat is generated when the LED elements 2a and 2b are lit (during light emission). Moreover, the temperature rises of the thermal displacement portion 3a of the lead electrode 3 and the thermal displacement portion 4a of the lead electrode 4 on which the LED elements 2a and 2b are mounted are relatively large. Therefore, in the thermal displacement portion 3a, the metal member 3aa having a relatively high thermal expansion coefficient positioned on the upper side is curved toward the side (downward) of the metal member 3ab having a relatively low thermal expansion coefficient positioned on the lower side. The metal member 4aa having a relatively high coefficient of thermal expansion located on the upper side is located on the side of the metal member 4ab having a relatively low coefficient of thermal expansion located on the lower side. Displace (curve displacement) in a curved shape toward (downward).

  Then, the LED element 2a mounted on the top surface of the tip of the metal member 3aa of the thermal displacement part 3a faces the second light emitting surface 5b of the transparent cover 5 with the optical axis Xa obliquely upward. Therefore, the emitted light from the LED element 2a passes through the second light emitting surface 5b of the transparent cover 5 and is irradiated obliquely upward of the LED element 2 as irradiation light La.

  The LED element 2b mounted on the top surface of the tip of the metal member 4aa of the thermal displacement part 4a has an optical axis Xb in the direction of the central axis Z of the transparent cover 5 (in other words, the lead electrodes 3 and 4 are arranged in parallel to each other. The direction of the second light emitting surface 5b of the transparent cover 5 is obliquely upward in the direction opposite to the direction of the optical axis Xa of the LED element 2a. Therefore, the emitted light from the LED element 2b passes through the second light emitting surface 5b of the transparent cover 5 and is obliquely upward in the direction opposite to the irradiation direction of the irradiation light La of the LED element 2a of the LED element 2b as irradiation light Lb. Irradiated towards.

  As described above, in the third embodiment, each of the LED mounting portions (thermal displacement portions 3a and 4a) on which the two LED elements 2a and 2b serving as the light emitting source of the semiconductor light emitting device 1 are mounted has a coefficient of thermal expansion. Two different types of metal members 3aa and 3ab and metal materials 4aa and 4ab are joined together, and at the same time, the first light emitting surface 5a and the second light emitting surface 5b are formed on the transparent cover 5 that houses the LED elements 2a and 2b. Two light exit surfaces were provided.

  The amount of heat generated by each LED element 2a, 2b is changed by controlling the energization current when the LED element is turned on (light emission), and the thermal displacement portions 3a, 4a are respectively changed by the temperature change of the thermal displacement portions 3a, 4a. The amount of bending displacement changes. As a result, the optical axis directions of the LED elements 2a and 2b mounted on the thermal displacement portions 3a and 4a are changed, and the emitted light from the LED elements 2a and 2b is changed into the first light emitting surface 5a and the second light emitting surface 5a of the transparent cover 5. The light is emitted from one of the light exit surfaces 5b.

  That is, the irradiation directions of the two irradiation lights La and Lb of the semiconductor light emitting device 1 can be individually changed by controlling the energization currents of the respective LED elements 2a and 2b. Thereby, it can further heighten rather than the presentation effect of the light by the semiconductor light-emitting device 1 of 1st Embodiment.

  Note that the metal materials 3aa, 3ab and the metal materials 4aa, 4ab constituting the respective thermal displacement portions 3a, 4a are heat generated during lighting (light emission) when a predetermined energization current is passed through the LED elements 2a, 2b. In this case, it is set in consideration of a desired irradiation direction by light emitted from the LED elements 2a and 2b.

  FIGS. 9 and 10 are diagrams for explaining a fourth embodiment of the semiconductor light emitting device of the present invention. Among them, FIG. 9 shows that an energizing current does not flow in the LED element of the light emitting source or is relatively. FIG. 10 is a side cross-sectional view showing a state when the energization current is small, and FIG. 10 is a side cross-sectional view showing a state when the energization current of the LED element of the light source is relatively large.

  The fourth embodiment is different from the third embodiment in that one of the first light emitting surface 5a and the second light emitting surface 5b of the transparent cover 5 (in the case of the fourth embodiment). A wavelength conversion member 8 such as a phosphor is applied to the inner surface of the second light emission surface 5b), and the emitted light excites the wavelength conversion member 8 on the two LED elements 2a and 2b to generate a wavelength having a desired wavelength. A type that emits converted light was used.

  Specifically, the blue LED elements 2a (B) and 2b (B) that emit blue light are used for the respective LED elements 2a and 2b, and the blue LED elements 2a (B) and 2b (B) are used for the wavelength conversion member 8. The yellow phosphor that is wavelength-converted to yellow light that is excited by the blue light of the emitted light and becomes a complementary color of the blue light is used.

  Then, in the semiconductor light emitting device 1 (see FIG. 9) in a state where the energization current to the LED elements 2a (B) and 2b (B) is relatively small, the lead electrodes 3 and 4 are the same as in the third embodiment. Each of the thermal displacement portions 3a, 4a is extended so that the tip portions thereof face each other, and is formed on the top surface of the tip portion of each metal member 3aa, 4aa of each thermal displacement portion 3a, 4a. The mounted LED elements 2a (B) and 2b (B) have their optical axes Xa and Xb facing upward and directed toward the first light emitting surface 5a of the transparent cover 5. Therefore, the emitted light (blue light) from the LED elements 2a (B) and 2b (B) is transmitted through the first light emitting surface 5a of the transparent cover 5 as the irradiation light L, and the LED elements 2a (B) and 2b, respectively. Irradiated in the direction directly above (B).

  On the other hand, in the semiconductor light emitting device 1 (see FIG. 10) in a state where the energization current for the LED elements 2a (B) and 2b (B) is relatively large, the LED elements 2a (B) and 2b (B) Since the heat generation at the time of lighting (during light emission) is relatively large, the temperature of the thermal displacement portion 3a of the lead electrode 3 and the thermal displacement portion 4a of the lead electrode 4 on which the respective LED elements 2a (B) and 2b (B) are mounted. Rise is also relatively high. Therefore, in the thermal displacement portion 3a, the metal member 3aa having a relatively high thermal expansion coefficient positioned on the upper side is curved toward the side (downward) of the metal member 3ab having a relatively low thermal expansion coefficient positioned on the lower side. The metal member 4aa having a relatively high coefficient of thermal expansion located on the upper side is located on the side of the metal member 4ab having a relatively low coefficient of thermal expansion located on the lower side. Displace (curve displacement) in a curved shape toward (downward).

  Then, the LED element 2a (B) mounted on the top surface of the tip of the metal member 3aa of the thermal displacement portion 3a is directed in the direction of the second light emitting surface 5b of the transparent cover 5 whose optical axis Xa is obliquely upward. Therefore, the emitted light from the LED element 2a (B) is transmitted through the second light emission surface 5b of the transparent cover 5 and irradiated as an irradiation light La obliquely upward of the LED element 2a (B).

  The LED element 2b (B) mounted on the top surface of the tip of the metal member 4aa of the thermal displacement part 4a has an optical axis Xb in the direction of the central axis Z of the transparent cover 5 (in other words, the lead electrodes 3 and 4 are parallel to each other). Toward the second light exit surface 5b of the transparent cover 5, which is obliquely above the direction opposite to the optical axis Xa direction of the LED element 2a (B). Therefore, the emitted light from the LED element 2b (B) passes through the second light emitting surface 5b of the transparent cover 5 and is irradiated as the irradiated light Lb. The irradiated light La of the LED element 2a (B) of the LED element 2b (B). Irradiation is performed obliquely upward in the direction opposite to the irradiation direction.

  At this time, the wavelength conversion member 8 made of a yellow phosphor is applied to the inner surface of the second light emitting surface 5a of the transparent cover 5, and the irradiation lights La and Lb from the second light emitting surface 5b are respectively blue. The blue light emitted from the LED elements 2a (B) and 2b (B) is partly converted into yellow light by exciting the yellow phosphor, and the blue LED elements 2a (B) and 2b (B ) To produce white light by additive color mixing with a portion of the blue light emitted from.

  As described above, in the fourth embodiment, the blue LED elements 2a (B) and 2b (B) that emit blue light are used as the two LED elements that serve as the light emitting sources of the semiconductor light emitting device 1. ) Each of the LED mounting portions (thermal displacement portions 3a, 4a) for mounting 2b (B) has a bimetallic structure in which two types of metal members 3aa, 3ab and metal materials 4aa, 4ab having different thermal expansion coefficients are joined, At the same time, the transparent cover 5 that accommodates the blue LED elements 2a (B) and 2b (B) is provided with two light emitting surfaces, a first light emitting surface 5a and a second light emitting surface 5b, and one of these light emitting surfaces. For example, in the case of the fourth embodiment, a wavelength conversion member 8 such as a phosphor is applied to the inner surface of the second light emitting surface 5b.

  Then, the amount of heat generated by each blue LED element 2a (B), 2b (B) is changed by controlling the energization current when the LED element is lit (light emission), and the heat is changed by the temperature change of the thermal displacement portions 3a, 4a. The amount of bending displacement of each of the displacement portions 3a and 4a changes. As a result, the optical axis direction of the blue LED elements 2a (B) and 2b (B) mounted on the thermal displacement portions 3a and 4a changes, and the emitted light from the LED elements 2a (B) and 2b (B) The light is emitted as either blue light from the first light exit surface 5a of the transparent cover 5 or white light from the second light exit surface 5b.

  That is, by controlling the energization currents of the respective LED elements 2a (B) and 2b (B), the hue can be individually changed together with the irradiation direction of the two irradiation lights of the semiconductor light emitting device 1. Thereby, the light effect by the semiconductor light emitting device 1 of the present embodiment can be further enhanced than the light effect by the semiconductor light emitting device 1 of the first to third embodiments.

  The metal materials 3aa, 3ab and the metal materials 4aa, 4ab constituting the respective thermal displacement portions 3a, 4a are turned on when a predetermined energization current is passed through the LED elements 2a (B), 2b (B) ( It is set in consideration of the heat generated during the light emission) and the desired irradiation direction by the light emitted from the LED elements 2a (B) and 2b (B) at that time.

  In addition, the code | symbol 10 in the figure used for description of the said Embodiment 1-4 has shown the printed circuit board which mounted the semiconductor light-emitting device 1. FIG.

  As described above, the semiconductor light-emitting device of the present invention controls (changes) the energization current of the LED element of the light-emitting source as described in the first to fourth embodiments, so that the irradiation direction, hue, and light distribution of the irradiation light are controlled. Changing one of the characteristics (the light distribution characteristic varies depending on whether the light emitted from the LED element is transmitted through the wavelength converting member or not), or a combination thereof, because the wavelength converting member has a light diffusing action. it can. Therefore, a variety of effects by light can be realized by changing the energization current of the LED element, and by various forms of irradiation light.

  In addition to the configurations of the first to fourth embodiments described above, a configuration in which a light exit surface not coated with a wavelength conversion member is used as a lens structure to control light distribution characteristics of light transmitted through the light exit surface, a plurality of light exit surfaces A structure in which the same type of wavelength conversion member is applied to all, a structure in which different types of wavelength conversion members are applied to each of the plurality of light exit surfaces, and an element having different emission colors for each of the plurality of mounted LED elements It is also possible to have a configuration, and a combination thereof is also possible.

  Furthermore, in the semiconductor light emitting device of the present invention, a thermal displacement portion that changes the optical axis direction of the LED element by an energizing current is provided in the semiconductor light emitting device. Therefore, a displacement region (displacement space) is not required for a device (for example, a lighting device) on which the semiconductor light emitting device of the present invention is mounted. Therefore, it contributes to the downsizing of equipment equipped with this semiconductor light emitting device.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor light-emitting device 2 ... Semiconductor light-emitting element (LED element)
2 _B ... Blue LED element 2a ... Semiconductor light emitting element (LED element)
2b ... Semiconductor light emitting device (LED device)
DESCRIPTION OF SYMBOLS 3 ... Lead electrode 3a ... Thermal displacement part 3aa ... Metal member 3ab ... Metal member 4 ... Lead electrode 4a ... Thermal displacement part 4aa ... Metal member 4ab ... Metal member 5 ... Transparent cover 5a ... 1st light-projection surface 5b ... 2nd light Outgoing surface 6 ... Encapsulant 7 ... Bonding wire 8 ... Wavelength conversion member 10 ... Printed circuit board

Claims (5)

A plurality of lead electrodes;
A semiconductor light emitting device mounted on at least one of the plurality of lead electrodes;
A transparent cover having a plurality of light emitting surfaces through which light emitted from the semiconductor light emitting element is transmitted, wherein one end side of each of the plurality of lead electrodes including the semiconductor light emitting element is hermetically accommodated, and
The lead electrode on which the semiconductor light emitting element is mounted is formed of a thermal displacement member having a bimetallic structure in which two types of metal members having different coefficients of thermal expansion are joined from the tip on the one end side to a predetermined length. A semiconductor light emitting device, wherein a semiconductor light emitting element is mounted on the thermal displacement member.   At least one of the plurality of light exit surfaces of the transparent cover includes a wavelength conversion member that emits light that has been excited by the light emitted from the semiconductor light emitting element and converted in wavelength. Item 14. The semiconductor light emitting device according to Item 1.   When there are a plurality of light exit surfaces having the wavelength conversion member, the light conversion surface is composed of one type of wavelength conversion member having the same hue of wavelength-converted light or two or more types of wavelength conversion members having different hues of light. The semiconductor light-emitting device according to claim 1 or 2.   4. When there are a plurality of the semiconductor light emitting elements, the semiconductor light emitting element includes one type of semiconductor light emitting element having the same emission color or two or more types of semiconductor light emitting elements having different emission colors. The semiconductor light-emitting device in any one.   5. The semiconductor light emitting device according to claim 1, wherein either an inert gas or an inert liquid is sealed in the transparent cover.

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