JP2014210398A - Method for manufacturing seamless mold for transferring fine structure - Google Patents

Abstract

PROBLEM TO BE SOLVED: To efficiently obtain a seamless mold for transferring a fine structure by discriminating a substrate that causes exposure failure prior to exposure development.SOLUTION: The method for manufacturing a seamless mold for transferring a fine structure comprises: evaluating a surface of a substrate that is a long body by irradiating the substrate with a first laser beam; forming a resist layer of a thermo-reactive resist or a photo-reactive resist on a substrate that is determined as a non-defective product by the above-mentioned evaluation; and irradiating the resist layer with a second laser beam to form a fine mold pattern.

Description

  The present invention relates to a method for manufacturing a seamless mold for fine structure transfer for producing a surface structure member having a fine structure.

  Conventionally, as a method for shaping a fine shape on a nanoimprint or an optical element, there is a method of transferring the shape to a glass substrate, a plastic substrate, a plastic film, etc. using a mold in which a fine shape is formed in advance (Patent Literature). 1, Patent Document 2).

  These technologies include a method of mechanically transferring a pattern by pressing a mold (or also called a mold or a template) as an original plate on which a pattern such as fine grooves and holes is formed, and pressing the material to be transferred. Examples thereof include a method of transferring using a plastic resin, and a method of transferring light using a photocurable resin (Patent Document 3). The resolution of the pattern in these methods is determined by the mold production accuracy. That is, once the mold can be formed, the microstructure can be formed with an inexpensive apparatus. As the above-mentioned mold that serves as an original plate, a parallel plate type mold (also called a wafer or a plate) and a cylindrical (roller) type mold are generally known (Patent Document 4, Non-Patent Document 1).

  As a parallel plate mold, a semiconductor lithography technique is used to apply an ultraviolet resist, electron beam resist, X-ray resist or the like on the substrate, and then irradiate and expose with ultraviolet light, electron beam, X-ray or the like. Thus, there are a method for producing an original plate having a desired pattern and a method for producing an original plate through a mask (reticle) on which a pattern is drawn in advance (Patent Document 5).

  These methods are very effective methods for forming a very fine pattern of about 100 nm on a plane. However, since a photoresist using photoreaction is used, in order to form a fine pattern, It is necessary to expose with a spot smaller than the pattern required in principle. Therefore, since a KrF or ArF laser having a short wavelength is used as the exposure light source, the exposure apparatus is required to have a large and complicated mechanism. Further, when an exposure light source such as an electron beam or X-ray is used, the exposure atmosphere needs to be in a vacuum state, so that the original plate needs to be placed in a vacuum chamber. For this reason, it is very difficult to increase the original size. On the other hand, in order to produce a large-area mold using these methods, a method of using a step-and-repeat function that joins small exposure areas is considered. There is a problem (Patent Document 6).

  On the other hand, two methods have conventionally been employed for producing a cylindrical (roller) mold. One method is a method in which an original plate of parallel plates is once produced, a shape is transferred by an electroforming method made of a thin film such as nickel, and the thin film is wound around a roller (Patent Document 7). As another method, there is a method (seamless roller mold) in which a mold pattern is directly drawn on a roller by laser processing or machining (Non-Patent Document 2). In the former method, it is necessary to wind a nickel thin film mold larger than the area to be manufactured, and there is a problem that a joint is generated in the wound portion. On the other hand, in the latter method, once a mold can be produced, the mold has high productivity and excellent mass productivity. However, it has been very difficult to form a pattern with a size of submicron (1 μm or less) using laser processing or machining.

  Therefore, a heat-reactive resist having a temperature distribution including a region that reacts at a predetermined temperature or more in the laser spot diameter is used, and a heat-reactive resist layer is formed on a sleeve-shaped mold. On the other hand, a method for forming a fine mold pattern using a laser has been developed.

US Pat. No. 5,259,926 US Pat. No. 5,772,905 JP 2005-238719 A JP 2006-5022 A JP 2007-144959 A JP 2007-258419 A Special table 2007-507725

Hua Tan, Andrew Gibertson, Stephen Y. Chou, "Roller nanoimprintlithography" J. Vac. Sci. Technol. B16 (6), 3926 (1998) Published by Information Organization Co., Ltd. “Nanoimprint Application Examples” P.611-P.612

  However, in the method of forming a fine pattern using a laser on the thermal reaction type resist layer, it is necessary to produce a master roll with very high accuracy. That is, if the accuracy of the master roll is low, unevenness occurs when the resist layer formed on the master roll is irradiated with laser light. Furthermore, since the specification of the master roll (sleeve roll) that causes exposure failure is unknown, there is a problem that the quality is unstable. For this reason, unless a resist layer is formed, exposed and developed on the master roll (base material), it is not known whether or not an exposure failure has occurred, and a great deal of labor and cost are required.

  SUMMARY OF THE INVENTION The present invention has been made in view of the above points, and a method for producing a seamless mold for fine structure transfer that can efficiently obtain a fine mold for transferring a fine structure by discriminating a substrate that causes exposure failure before exposure and development. The purpose is to provide.

  The method for producing a seamless mold for fine structure transfer according to the present invention includes a step of irradiating a long base material with a first laser beam to evaluate the surface of the base material, and a base determined to be non-defective in the evaluation. A step of forming a resist layer of a heat-reactive resist or a photoreactive resist on the material, and a step of forming a fine mold pattern by irradiating the resist layer with a second laser beam. And

  In the manufacturing method of the seamless mold for fine structure transfer of the present invention, the light intensity signal obtained when the reflected light from the base material irradiated with the first laser light is received by a photodetector is Fourier-transformed. It is preferable to evaluate the surface of the base material using a frequency spectrum obtained in this manner.

  In the method for manufacturing a seamless mold for fine structure transfer according to the present invention, the photodetector includes a light receiving region divided into a plurality of portions, and the light intensity signal is obtained from the light intensity received in each light receiving region. Is preferred.

  In the method for producing a seamless mold for fine structure transfer according to the present invention, the substrate is regarded as a good product when it does not have a peak of 3 mV in terms of the converted voltage value of the light intensity signal in the frequency band of 100 Hz to 10 kHz in the frequency spectrum. It is preferable to determine.

  In the method for manufacturing a seamless mold for fine structure transfer of the present invention, the surface of the substrate is evaluated by irradiating the first laser beam while rotating the substrate having the resist layer at a rotational linear velocity of 10 m / s. In this case, it is preferable that the base material is determined to be non-defective when the undulation interval on the surface of the base material is less than 1 mm.

  In the method for manufacturing a seamless mold for fine structure transfer of the present invention, the surface of the substrate is evaluated by irradiating the first laser beam while rotating the substrate having the resist layer at a rotational linear velocity of 10 m / s. In this case, it is preferable that the base material is determined as a non-defective product when the undulation interval on the surface of the base material is 100 mm or more.

  In the method for manufacturing a seamless mold for fine structure transfer according to the present invention, the output of the first laser beam is not affected by light or heat on the mold, and is therefore 5% or less of the output of the second laser beam. Is preferred.

  According to the present invention, it is possible to determine a base material that causes exposure failure before exposure and development, and to obtain a seamless microstructure transfer microstructure mold efficiently.

It is a schematic diagram which shows an example of the exposure apparatus used for the manufacturing method of the seamless mold for fine structure transfer which concerns on this invention. It is a schematic diagram which shows the optical system used when evaluating the surface of the base material in a resist laminated body. It is a figure for demonstrating the surface of the base material in a resist laminated body. It is a figure for demonstrating a light intensity signal. It is a graph which shows intensity distribution of a laser beam. It is a graph which shows the temperature distribution of the part irradiated with the laser beam. It is a figure which shows the frequency spectrum of an Example and a comparative example.

  Hereinafter, an embodiment of the present invention (hereinafter abbreviated as “embodiment”) will be described in detail with reference to the accompanying drawings. In addition, this invention is not limited to the following embodiment, It can implement by changing variously within the range of the summary.

FIG. 1 is a schematic view showing an example of an exposure apparatus used in the method for producing a microstructure transfer seamless mold according to the present invention. The exposure apparatus shown in FIG. 1 is configured to irradiate light to the resist laminate 12 attached to the shaft 11 via the optical system O ₁ by rotating the shaft 11 connected to the spindle motor 13. take.

In the optical system O _1, the laser beam emitted from the semiconductor laser 14 for exposure is sent to the objective lens 15 through the mirror as a parallel light by the collimator. Then, the laser light L ₁ collected by the objective lens 15 is irradiated onto the peripheral surface (surface) of the resist laminate 12. In addition, the resist laminated body 12 has the resist layer 12b of a heat-reactive resist or a photoreactive resist on the base material 12a which is a long body.

In the method for manufacturing a microstructure transfer seamless mold of the present invention, by irradiating a laser beam L ₂ in the optical system O ₂ to be described later to the substrate 12a to evaluate the surface of the substrate 12a, it is judged to be good in this evaluation a resist layer 12b of the thermal reaction type resist or a photoreactive resist is formed on the substrate, by irradiating a laser beam L ₁ in the optical system O ₁ described above for the resist layer 12b to form a fine mold pattern . The optical system O ₁ has an autofocus function, and can adjust the focus of the objective lens 15 based on a light intensity signal described later.

As shown in FIG. 2, the optical system O ₂ mainly includes a semiconductor laser 16, a beam splitter 17, a cylindrical lens 18, and a photodetector 19. In this optical system O ₂ , the beam splitter 17 directs the laser light emitted from the semiconductor laser 16 to the base material 12 a and directs the light reflected by the base material 12 a to the photodetector 19 through the cylindrical lens 18. Like that. That is, when the laser light emitted from the semiconductor laser 16 enters the beam splitter 17, the optical path is changed and directed to the base material 12a (L ₂ ). Laser light L is irradiated to the substrate 12a ₂ is incident on the beam splitter 17 is reflected by the substrate 12a. When this light enters the beam splitter 17, it is directed to the cylindrical lens 18. This light passes through the cylindrical lens 18 and is received by the photodetector 19.

In the base material 12a of the resist laminate 12, the surface 12c is wavy as shown in FIG. Optical system O ₂ is used to the substrate 12a which is rotated by irradiating a laser beam L ₂ measured waviness state of the substrate 12a by evaluating the surface of the substrate 12a. Evaluation of the substrate surface, the light intensity signal obtained upon receiving the light reflected from the substrate 12a by irradiating a laser beam L ₂ by the photodetector Fourier transform, a frequency spectrum obtained by the Fourier transform Is used.

  As shown in FIG. 4, the photodetector 19 has a light receiving region divided into a plurality (four in FIG. 4), and the light (spot A) that has passed through the cylindrical 18 is received by each of the light receiving regions 19 a to 19 a. Light is received at 19d. The light intensity signal is obtained from the light intensity received by each of the light receiving regions 19a to 19d. In the photodetector 19, the regions 19 a and 19 c are at diagonal positions across the spot A, and the regions 19 b and 19 d are at diagonal positions across the spot A. The voltage value corresponding to the light intensity in the region 19a is Va, the voltage value corresponding to the light intensity in the region 19b is Vb, the voltage value corresponding to the light intensity in the region 19c is Vc, and corresponds to the light intensity in the region 19d. When the voltage value is Vd, (Va + Vc) − (Vb + Vd) is referred to as a light intensity signal (differential voltage value).

Auto-focus function of the optical system O ₁ shown in FIG. 1, the means controlling the focus of the objective lens 15 to approach to zero of the above light intensity signal. Therefore, the light intensity signal is output in a state where the focus is not adjusted. In this sense, the light intensity signal is also referred to as a focus error (FE) signal.

  If the differential voltage value, which is a light intensity signal, exceeds a predetermined value due to individual differences in the base 12a, the autofocus function may not work. If exposure is performed in such a state, exposure failure may occur and processing failure may occur. As a result of examining the light intensity signal by Fourier analysis, the present inventors have found that the waviness of the base material when the base material is rotating affects the exposure failure.

  In the examination results of the present inventors, the displacement range of the position of the surface 12c in the longitudinal direction (arrow direction) of the base material 12a shown in FIG. 3 (difference between the thick part and the thin part of the base material 12a). ) Is the amplitude of the undulation (X), and the distance between the thick portion having the maximum value of the thickness of the substrate 12a and the thick portion having the next maximum value is the undulation interval (Y), the exposure failure. The state of the undulation of the base material in which the above occurs was found.

Conditions under which exposure failure does not occur are as follows.
(Condition 1)
When the amplitude (X) of the undulation of the surface 12c is less than 0.03 μm (Condition 2)
When the waviness is less than 1 mm (Condition 3)
When the undulation interval is 100 mm or more

The conditions under which exposure failure occurs are the following conditions.
(Condition 4)
When the amplitude (X) of the undulation is 0.03 μm or more and the undulation interval is 1 mm or more and less than 100 mm

In the above description, the case where the surface of the substrate is evaluated by irradiating the first laser beam while rotating the resist laminated body at a rotational linear velocity of 10 m / s is described. In the present invention, the upper limit and the lower limit of the waviness interval are different due to the change in the rotational linear velocity. For example, if the rotational linear velocity is 3 m / s, the lower limit of the waviness interval is less than 0.3 mm, and the upper limit is 30 mm or more. Further, when the rotational linear velocity is 0.5 m / s, the lower limit of the waviness interval is less than 0.05 mm, and the upper limit is 5 mm or more.
It should be noted that the relationship between the rotation linear velocity and the lower limit of the waviness interval is (the upper limit of the waviness interval) = | 10 × rotational linear velocity (m / s) | mm or more,
The relationship between the rotational linear velocity and the upper limit of the undulation interval is (less than the undulation interval) = | 0.1 × the rotational linear velocity (m / s) | mm.

Therefore, based on the knowledge as described above, the state of waviness of the base material is evaluated in advance by the optical system O _{2, and} it is determined whether or not the exposure processing is performed based on the evaluation result, thereby generating an exposure failure. Can be prevented in advance. Thereby, the manufacturing efficiency of the seamless mold for fine structure transfer can be improved.

  Here, the reference | standard which determines the base material which does not produce exposure defect is demonstrated.

  When the frequency spectrum is obtained by Fourier transforming the light detection signal, the amplitude 0 μm of the undulation on the surface of the substrate corresponds to a voltage value of 0 V in the frequency band from 100 Hz to 10 kHz, and the amplitude of the undulation 0.03 μm becomes a voltage value of 3 mV. Equivalent to. That is, if the voltage value is less than 3 mV in the frequency band of 100 Hz to 10 kHz of the frequency spectrum (Condition 1), the autofocus function works and exposure can be performed satisfactorily. That is, when the frequency band of 100 Hz to 10 kHz in the frequency spectrum does not have a peak of 3 mV in terms of the converted voltage value of the light intensity signal, the undulation of the substrate surface does not affect the exposure failure, and the substrate is regarded as a non-defective product. judge.

  Further, if the linear rotation speed of the resist laminate is 10 m / s and the waviness interval on the substrate surface is less than 1 mm (condition 2), no photodetection signal is generated in the frequency band from 100 Hz to 10 kHz, and autofocusing is performed. The function works effectively and exposure can be performed satisfactorily. The frequency can be converted from the linear velocity at the time of rotation of the resist laminated body and the interval of waviness at the time of exposure ((frequency) = (linear velocity at the time of rotating the resist laminated body) / (interval of waviness)). . Thus, the waviness interval and the detection signal frequency correspond to the number of rotations of the resist laminate. For example, when the rotational speed of the resist laminate is 10 m / s, the frequency is 10 kHz or more when the waviness interval is less than 1 mm.

  Further, when the linear rotation speed of the resist laminate is 10 m / s and the waviness interval on the substrate surface is 100 mm or more (condition 3), no photodetection signal is generated in the frequency band from 100 Hz to 10 kHz, and the autofocus function Works effectively, and exposure can be performed satisfactorily. For example, when the rotational speed of the resist laminate is 10 m / s, the frequency is 100 Hz or less when the waviness interval is 100 mm or more.

  On the other hand, if the rotational speed of the resist laminate is 10 m / s, the amplitude of the waviness on the substrate surface is 0.03 μ or more, and the waviness interval is 1 mm or more and less than 100 mm (Condition 4), the frequency band from 100 Hz to 10 kHz. Thus, the light detection signal is detected to be 3 mV or more. This is a state in which an exposure failure has occurred. Therefore, for example, when the linear velocity of rotation of the resist laminated body is 10 m / s, the frequency is 10 kHz or less when the waviness interval is 1 mm or more, and 100 Hz or more when it is 100 mm or less.

  As a result of intensive studies in view of the above points, the present inventors have evaluated the surface of the base material, and when the evaluation result is determined to be good based on the above criteria (conditions), By forming a resist layer on the material, it has been found that processing defects due to exposure failure can be reliably prevented and the present invention has been achieved.

  That is, the gist of the present invention is to irradiate a base material, which is a long body, with the first laser beam to evaluate the surface of the base material, and on the base material determined to be non-defective in the evaluation, By forming a resist layer of a reactive resist and irradiating the resist layer with a second laser beam to form a fine mold pattern, it is possible to discriminate the base material causing the exposure failure before exposure and development, and efficiently It is to obtain a seamless mold for fine structure transfer.

As described above, when the substrate surface is evaluated before forming the resist layer on the substrate, the optical system O ₂ is scanned in the longitudinal direction of the substrate by 0.5 μm to 5 μm. . The evaluation of the substrate surface may be carried out while the resist layer is exposed after the resist layer is formed on the substrate.

In the exposure apparatus shown in FIG. 1, the optical systems O ₁ and O ₂ are configured to move in the longitudinal direction of the substrate 12a and the resist laminate 12, and one end of the substrate 12a and the resist laminate 12 is arranged. It is possible to measure and expose by scanning from one part to the other end. Further, the arrangement of the constituent members in the optical systems O ₁ and O ₂ is not limited to the arrangement shown in FIG. 1 as long as the optical path as described above can be realized.

The output of the semiconductor laser (laser for evaluation) in the optical system O ₂ is made smaller than the output of the semiconductor laser (laser for exposure) in the optical system O ₁ . For example, the output of the laser for evaluation is desirably small in consideration of not affecting the substrate, and desirably large in consideration of detection sensitivity. Considering these, the output of the laser for evaluation is preferably about 0.1 mW to 1 mW. Considering that the output of the laser for exposure is about 5 mW to 25 mW, the output of the semiconductor laser in the optical system O ₂ is desirably 5% or less of the output of the semiconductor laser in the optical system O ₁ . In addition, the evaluation laser and the exposure laser may be either the same light source or different light sources depending on the design of the optical system.

  In addition, although the case where the laser is the semiconductor laser 14 or 16 is described in the above-described exposure apparatus, an excimer laser such as a KrF laser or an ArF laser, an electron beam, an X-ray, or the like can be used as the laser. . Excimer lasers such as KrF laser and ArF laser are very large and expensive, and electron beams, X-rays, etc. need to use a vacuum chamber, so there are limitations from the viewpoint of cost and enlargement, A semiconductor laser is preferred.

In the present embodiment, the case where the optical systems O ₁ and O ₂ are individually configured has been described. However, the optical systems O ₁ and O ₂ may be configured by a single optical system. .

  The resist laminated body 12 shown in FIG. 1 is comprised by the base material 12a which is a elongate body, and the resist layer 12b provided on the base material 12a as mentioned above. The base material 12a may be cylindrical or cylindrical.

  Examples of the material constituting the base material 12a include metals, glasses, ceramics, resins, and the like. Moreover, as a resist material which comprises the resist layer 12b, a heat reaction type resist or a photoreaction type resist is mentioned.

  When the object is irradiated with laser light having a distribution as shown in FIG. 5, the temperature of the object also exhibits the same Gaussian distribution as the intensity distribution of the laser light. At this time, if a resist that reacts at a certain temperature or higher, that is, a heat-reactive resist, the reaction proceeds only at a temperature that exceeds a predetermined temperature as shown in FIG. It becomes. That is, a pattern finer than the spot diameter can be formed without reducing the wavelength of the exposure light source. Therefore, the influence of the exposure light source wavelength can be reduced by using the heat-reactive resist. As described above, the thermal reaction type resist is preferable in that fine processing on the nano order is easy.

  The heat-reactive resist material may be an organic resist material or an inorganic resist material. Among these, the organic resist material is advantageous because it can be applied with a roll coater or the like when it is formed on the substrate 12a shown in FIG.

  On the other hand, in the case of an inorganic resist material, it is preferably composed of an incomplete oxide, a pyrolytic oxide, or a metal alloy. Thermally reactive resists using inorganic materials such as metals and oxides have extremely stable chemical and physical properties at room temperature, and have a higher thermal conductivity than organic materials. It is suitable for forming a narrow microstructure.

  The inorganic heat-reactive resist material as described above can be variously selected depending on the reaction temperature. For example, Al, Si, P, Ni, Cu, Zn, Ga, Ge, As, Se, In, Sn , Sb, Te, Pb, Bi, Ag, Au, and alloys thereof. Further, as an inorganic thermal reaction type resist material, Mg, Al, Si, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Sr, Y, Zr are used. Nb, Mo, Pd, Ag, In, Sn, Sb, Te, Ba, Hf, Ta, W, Pt, Au, Pb, Bi, La, Ce, Sm, Gd, Tb, Dy oxides and nitrides Nitrogen oxides, carbides, sulfides, sulfates, fluorides, chlorides, and mixtures thereof can also be used.

  Although the resist laminate 12 shown in FIG. 1 shows a case where the resist layer 12 has one resist layer 12b, the present invention is not limited to this, and also when a resist laminate having a plurality of resist layers is used. The same can be applied.

  Examples carried out to clarify the effects of the present invention will be described below.

(Example)
A quartz glass substrate having a length of 50 mm and a diameter of 74 mmφ and a cylindrical quartz glass having a thickness of 3 mm is covered with a conductive epoxy resin, and fixed to a quartz glass substrate (sleeve roll). 3) were prepared. A shaft having a length of 50 mm and a diameter of 30 mm was attached to one side of the roll so as to coincide with the center line of the core made of carbon fiber.

  After polishing the quartz glass surface of the sleeve roll, the sleeve roll is mounted on the exposure apparatus shown in FIG. 1, and a laser beam with a power of 0.2 mW is applied to the sleeve roll while rotating at a rotational speed of 7 m / s around the central axis. And the light detection signal was read. The photodetection signal was Fourier transformed to obtain a frequency spectrum. At this time, as shown in FIG. 7, for one sleeve roll, there is no peak of 3 mV or higher in the frequency band of the frequency spectrum from 100 Hz to 10 kHz (peak voltage is less than 3 mV) (Example) For the two sleeve rolls, a peak of 3 mV or more was present in the frequency band of the frequency spectrum from 100 Hz to 10 kHz (peak voltage was 3 mV or more) (Comparative Examples 1 and 2). For this reason, the sleeve roll having a peak voltage of less than 3 mV was determined to be a non-defective product because no exposure failure occurred. In addition, the waviness interval in the examples is 120 mm or more for large waviness and 0.5 mm or less for small waviness, and satisfies the upper limit (70 mm or more) and the lower limit (less than 0.7 mm) when the rotational linear velocity is 7 m / s. ing.

  While rotating at a rotational speed of 7 m / s around the central axis of the sleeve roll, CuO is deposited on each of the three sleeve rolls as a thermal reaction resist by sputtering to form a resist layer having a thickness of 20 nm. Thus, three resist laminates were obtained. Next, the resist layer of these resist laminates was exposed to a laser beam with a power of 8 mW.

  Each resist laminate after exposure is developed with a 0.3 wt% solution of glycine for 10 minutes, and then the surface of each resist laminate is washed with distilled water and dried with isopropyl alcohol (IPA) to obtain three fine particles. A seamless mold for structure transfer was obtained.

  About each obtained seamless mold for fine structure transcription | transfer, the exposure defect by visual observation was implemented. The criteria for determining exposure failure were as follows. A case where black-and-white contrast could not be confirmed visually was determined to be good, and a case where a black-and-white contrast striped pattern was visually observed was determined to be defective. With respect to the seamless mold for transferring a fine structure of the example, the black and white contrast could not be visually confirmed, and the exposure was performed with high accuracy. On the other hand, the microstructure transfer seamless molds of Comparative Examples 1 and 2 visually had a black and white contrast stripe pattern. When the portion having the stripe pattern was observed with an AFM (atomic force microscope), it was found that the fine pattern was uneven.

  The present invention can be applied, for example, to the formation of a fine pattern of a roll-shaped mold used in a nanoimprint method in the fields of semiconductors, optical / magnetic recording, and the like.

DESCRIPTION OF SYMBOLS 11 Shaft 12 Resist laminated body 12a Base material 12b Resist layer 12c Surface 13 Spindle motor 14, 16 Semiconductor laser 15 Objective lens 17 Beam splitter 18 Cylindrical lens 19 Photo detectors 19a-19d Light receiving area

Claims (7)

  A process of evaluating the surface of the base material by irradiating the base material, which is a long body, with the first laser light, and a heat-reactive resist or a photoreactive resist resist on the base material determined to be non-defective in the evaluation A method of manufacturing a seamless mold for fine structure transfer, comprising: a step of forming a layer; and a step of irradiating the resist layer with a second laser beam to form a fine mold pattern.   The surface of the substrate is evaluated using a frequency spectrum obtained by Fourier transforming a light intensity signal obtained when the reflected light from the substrate irradiated with the first laser light is received by a photodetector. The method for producing a seamless mold for fine structure transfer according to claim 1.   3. The seamless mold for fine structure transfer according to claim 2, wherein the photodetector has a light receiving area divided into a plurality of parts, and the light intensity signal is obtained from the light intensity received in each light receiving area. Manufacturing method.   The said base material is determined to be non-defective when the converted voltage value of the light intensity signal does not have a peak of 3 mV in the frequency band of 100 Hz to 10 kHz in the frequency spectrum. Of producing a seamless mold for fine structure transfer.   When the surface of the base material is evaluated by irradiating the first laser beam while rotating the base material having the resist layer at a rotational linear velocity of 10 m / s, the undulation interval of the surface of the base material is less than 1 mm. 4. The method for producing a seamless mold for fine structure transfer according to claim 2, wherein the substrate is determined to be a non-defective product.   When the surface of the base material is evaluated by irradiating the first laser beam while rotating the base material having the resist layer at a rotational linear speed of 10 m / s, the undulation interval of the surface of the base material is 100 mm or more. 4. The method for producing a seamless mold for fine structure transfer according to claim 2, wherein the substrate is determined to be a non-defective product.   The method for manufacturing a seamless mold for fine structure transfer according to any one of claims 1 to 6, wherein the output of the first laser beam is 5% or less of the output of the second laser beam.

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