JP2014202562A - Dynamic quantity sensor - Google Patents

Dynamic quantity sensor Download PDF

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JP2014202562A
JP2014202562A JP2013077936A JP2013077936A JP2014202562A JP 2014202562 A JP2014202562 A JP 2014202562A JP 2013077936 A JP2013077936 A JP 2013077936A JP 2013077936 A JP2013077936 A JP 2013077936A JP 2014202562 A JP2014202562 A JP 2014202562A
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conductor pattern
conductor
quantity sensor
wall surface
recess
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章平 大庭
Shohei Oba
章平 大庭
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Denso Corp
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Denso Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48095—Kinked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48145—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To provide dynamic quantity sensor capable of suppressing the entry of noise to a conductive member electrically connecting a sensor portion and a circuit portion.SOLUTION: Of a case 30, on a wall surface of a recessed portion 31, a conductor pattern 38 is formed. An external terminal 35b electrically connected to the external ground is formed on an outer wall surface of the case 30, and inner wiring 37b for electrically connecting the conductor pattern 38 and the external terminal 35b is formed between an inner wall surface and the outer wall surface of the case 30. Therefore, noise is easy to enter the conductor pattern 38 connected to the external ground, and the entry of noise to the conductor member can be suppressed. Consequently, the generation of a detection error due to noise can be suppressed.

Description

本発明は、容量に基づいて物理量を検出するセンサ部およびセンサ部と電気的に接続される回路部がケースに配置された力学量センサに関するものである。   The present invention relates to a sensor unit for detecting a physical quantity based on a capacity and a mechanical quantity sensor in which a circuit unit electrically connected to the sensor unit is arranged in a case.

従来より、この種の力学量センサとして、次のようなものが提案されている（例えば、特許文献１参照）。   Conventionally, the following sensors have been proposed as this type of mechanical quantity sensor (for example, see Patent Document 1).

すなわち、この力学量センサでは、ケースの一面に凹部が形成され、当該凹部にセンサ部および回路部が積層されて配置されている。なお、センサ部は、物理量に応じた容量変化をセンサ信号として出力するものであり、例えば、加速度や角速度に応じた容量変化をセンサ信号として出力するものである。また、回路部は、センサ信号を電圧信号に変化させる等の各種回路が形成されたものである。そして、センサ部と回路部とは、ワイヤ等の導電性部材を介して電気的に接続されている。   That is, in this mechanical quantity sensor, a concave portion is formed on one surface of the case, and the sensor portion and the circuit portion are stacked in the concave portion. The sensor unit outputs a change in capacitance according to a physical quantity as a sensor signal. For example, the sensor unit outputs a change in capacitance according to acceleration or angular velocity as a sensor signal. The circuit section is formed with various circuits such as changing a sensor signal into a voltage signal. The sensor unit and the circuit unit are electrically connected via a conductive member such as a wire.

特開２０１２−２２５８５２号公報JP 2012-225852 A

しかしながら、上記力学量センサでは、ケース内にノイズが侵入するとセンサ部と回路部とを電気的に接続する導電性部材に当該ノイズが侵入し易く、ノイズによって検出誤差が発生するという問題がある。   However, the mechanical quantity sensor has a problem that when noise enters the case, the noise easily enters a conductive member that electrically connects the sensor unit and the circuit unit, and a detection error occurs due to the noise.

本発明は上記点に鑑みて、センサ部と回路部とを電気的に接続する導電性部材にノイズが侵入することを抑制できる力学量センサを提供することを目的とする。   An object of this invention is to provide the mechanical quantity sensor which can suppress that a noise penetrate | invades into the electroconductive member which electrically connects a sensor part and a circuit part in view of the said point.

上記目的を達成するため、請求項１に記載の発明では、物理量に応じて変化する容量に基づいたセンサ信号を出力する容量式のセンサ部（１０）と、センサ信号に対して所定の処理を行う回路部（２０）と、センサ部と回路部とを電気的に接続する導電性部材（４１）と、一面に凹部（３１）が形成され、凹部にセンサ部および回路部が配置されるケース（３０）とを備え、以下の点を特徴としている。   In order to achieve the above object, according to the first aspect of the present invention, a capacitive sensor unit (10) that outputs a sensor signal based on a capacitance that changes according to a physical quantity, and a predetermined process for the sensor signal are performed. The case where the circuit part (20) to be performed, the conductive member (41) for electrically connecting the sensor part and the circuit part, and the concave part (31) is formed on one surface, and the sensor part and the circuit part are arranged in the concave part (30) with the following features.

すなわち、ケースは、凹部の壁面に導体パターン（３８）が形成され、当該ケースの外壁面に外部のグランドと電気的に接続される外部端子（３５ｂ）が形成され、当該ケースの内壁面と外壁面との間に導体パターンと外部端子とを電気的に接続する内部配線（３７ｂ）が形成されていることを特徴としている。   That is, the case has a conductor pattern (38) formed on the wall surface of the recess, and an external terminal (35b) electrically connected to an external ground on the outer wall surface of the case. An internal wiring (37b) for electrically connecting the conductor pattern and the external terminal is formed between the wall surface and the wall surface.

これによれば、ケースの外部から凹部内に侵入したノイズは、外部のグランドと接続される導体パターンに侵入し易くなり、導電性部材にノイズが侵入することを抑制できる。このため、ノイズによって検出誤差が発生することを抑制できる。   According to this, the noise that has entered the recess from the outside of the case easily enters the conductor pattern connected to the external ground, and the noise can be prevented from entering the conductive member. For this reason, it can suppress that a detection error arises by noise.

なお、この欄および特許請求の範囲で記載した各手段の括弧内の符号は、後述する実施形態に記載の具体的手段との対応関係を示すものである。   In addition, the code | symbol in the bracket | parenthesis of each means described in this column and the claim shows the correspondence with the specific means as described in embodiment mentioned later.

本発明の第１実施形態における力学量センサの断面図である。It is sectional drawing of the mechanical quantity sensor in 1st Embodiment of this invention. 図１に示す力学量センサの平面図である。It is a top view of the mechanical quantity sensor shown in FIG. 図１に示すケースの平面図である。It is a top view of the case shown in FIG. 本発明の第２実施形態におけるケースの平面図である。It is a top view of the case in 2nd Embodiment of this invention. 本発明の第３実施形態におけるケースの平面図である。It is a top view of the case in 3rd Embodiment of this invention.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other will be described with the same reference numerals.

（第１実施形態）
本発明の第１実施形態について説明する。図１および図２に示されるように、本実施形態の力学量センサは、センサ部１０および回路部２０がケース３０に収容されて構成されている。なお、図２では、理解をし易くするため、後述する蓋部を省略して示してある。 (First embodiment)
A first embodiment of the present invention will be described. As shown in FIGS. 1 and 2, the mechanical quantity sensor of the present embodiment is configured such that the sensor unit 10 and the circuit unit 20 are accommodated in a case 30. In FIG. 2, a lid that will be described later is omitted for easy understanding.

センサ部１０は、例えば、シリコン基板等に櫛歯構造を有する梁構造体が形成され、印加された加速度や角速度等の物理量に応じて可動電極と固定電極との間の静電容量が変化し、当該静電容量をセンサ信号として出力する容量式の半導体チップを有するものである。そして、本実施形態のセンサ部１０は、当該半導体チップがセラミック等のパッケージに収容されて構成されており、パッケージには半導体チップと電気的に接続されたパッド１１が形成されている。   In the sensor unit 10, for example, a beam structure having a comb-tooth structure is formed on a silicon substrate or the like, and the capacitance between the movable electrode and the fixed electrode changes according to a physical quantity such as applied acceleration or angular velocity. A capacitance type semiconductor chip that outputs the capacitance as a sensor signal is provided. And the sensor part 10 of this embodiment is comprised, and the said semiconductor chip is accommodated in packages, such as a ceramic, and the pad 11 electrically connected with the semiconductor chip is formed in the package.

回路部２０は、センサ部１０で検出された静電容量の変化を電気信号として処理したり、センサ部１０に印加する電圧を調整したりする各種回路手段が形成されたものであり、例えば、シリコン基板やセラミック基板を用いて構成されている。そして、パッド２１を介してセンサ部１０のパッド１１とワイヤ４１を介して電気的に接続されている。なお、本実施形態では、ワイヤ４１が本発明の導電性部材に相当している。   The circuit unit 20 is formed with various circuit means for processing the change in capacitance detected by the sensor unit 10 as an electrical signal or adjusting the voltage applied to the sensor unit 10, for example, It is configured using a silicon substrate or a ceramic substrate. And it is electrically connected to the pad 11 of the sensor unit 10 via the wire 21 via the pad 21. In the present embodiment, the wire 41 corresponds to the conductive member of the present invention.

ケース３０は、一面に凹部３１が形成された箱部３２と、箱部３２の開口部を閉塞する蓋部３３とを有している。   The case 30 includes a box portion 32 having a recess 31 formed on one surface and a lid portion 33 that closes an opening of the box portion 32.

箱部３２は、アルミナ等のセラミック層が複数積層されて構成されており、セラミック層に凹部３１が形成されることによって側部３２ａおよび底部３２ｂが構成されている。そして、側部３２ａの内壁面に内部端子３４が形成されており、当該内部端子３４が回路部２０のパッド２１とワイヤ４２を介して電気的に接続されている。これにより、回路部２０と外部回路との接続が図れるようになっている。   The box portion 32 is configured by laminating a plurality of ceramic layers such as alumina, and the side portion 32a and the bottom portion 32b are configured by forming the recess 31 in the ceramic layer. And the internal terminal 34 is formed in the inner wall face of the side part 32a, and the said internal terminal 34 is electrically connected via the pad 21 and the wire 42 of the circuit part 20. FIG. As a result, connection between the circuit unit 20 and the external circuit can be achieved.

また、底部３２ｂの外壁面には第１外部端子３５ａが形成されている。そして、内部端子３４と第１外部端子３５ａとは、側部３２ａを貫通する第１スルーホール３６ａに配置されている第１内部配線３７ａを介して電気的に接続されている。   A first external terminal 35a is formed on the outer wall surface of the bottom 32b. And the internal terminal 34 and the 1st external terminal 35a are electrically connected through the 1st internal wiring 37a arrange | positioned at the 1st through hole 36a which penetrates the side part 32a.

また、底部３２ｂには、図１〜図３に示されるように、内壁面に銀ペースト等で構成される導体パターン３８が形成され、外壁面に外部回路のグランドと電気的に接続される第２外部端子３５ｂが形成されている。そして、導体パターン３８と第２外部端子３５ｂとは、底部３２ｂを貫通する第２スルーホール３６ｂに配置された第２内部配線３７ｂを介して電気的に接続されている。これにより、導体パターン３８と外部回路のグランドとの接続が図れるようになっている。   In addition, as shown in FIGS. 1 to 3, a conductive pattern 38 made of silver paste or the like is formed on the inner wall surface, and the outer wall surface is electrically connected to the ground of the external circuit. Two external terminals 35b are formed. The conductor pattern 38 and the second external terminal 35b are electrically connected via the second internal wiring 37b disposed in the second through hole 36b penetrating the bottom portion 32b. As a result, connection between the conductor pattern 38 and the ground of the external circuit can be achieved.

なお、本実施形態では、第２外部端子３５ｂが本発明の外部端子に相当し、第２内部配線３７ｂが本発明の内部配線に相当している。   In the present embodiment, the second external terminal 35b corresponds to the external terminal of the present invention, and the second internal wiring 37b corresponds to the internal wiring of the present invention.

そして、図１および図２に示されるように、ケース３０のうち底部３２ｂ上にセンサ部１０および回路部２０が配置されている。本実施形態では、導体パターン３８上に接着剤５１を介して回路部２０が搭載され、回路部２０上に接着剤５２を介してセンサ部１０が搭載されている。つまり、回路部２０およびセンサ部１０は、積層された状態で底部３２ｂに搭載されている。   As shown in FIGS. 1 and 2, the sensor unit 10 and the circuit unit 20 are disposed on the bottom 32 b of the case 30. In the present embodiment, the circuit unit 20 is mounted on the conductor pattern 38 via the adhesive 51, and the sensor unit 10 is mounted on the circuit unit 20 via the adhesive 52. That is, the circuit unit 20 and the sensor unit 10 are mounted on the bottom 32b in a stacked state.

また、蓋部３３は、コバルト等で構成されており、箱部３２の開口部に接着剤等を介して接合されている。   The lid 33 is made of cobalt or the like, and is joined to the opening of the box 32 via an adhesive or the like.

このような力学量センサは、第１、第２外部端子３５ａ、３５ｂが外部回路としてのプリント基板等と電気的に接続されるように搭載されて用いられる。   Such a mechanical quantity sensor is mounted and used so that the first and second external terminals 35a and 35b are electrically connected to a printed circuit board or the like as an external circuit.

以上説明したように、本実施形態では、底部３２ｂの内壁面に導体パターン３８が形成され、当該導体パターン３８が外部回路のグランドと接続される第２外部端子３５ｂと電気的に接続されている。このため、ケース３０の外部から凹部３１内に侵入したノイズは、導体パターン３８に侵入し易くなり、ワイヤ４１にノイズが侵入することを抑制できる。したがって、ノイズによって検出誤差が発生することを抑制できる。   As described above, in this embodiment, the conductor pattern 38 is formed on the inner wall surface of the bottom 32b, and the conductor pattern 38 is electrically connected to the second external terminal 35b connected to the ground of the external circuit. . For this reason, noise that has entered the recess 31 from the outside of the case 30 easily enters the conductor pattern 38, and the noise can be prevented from entering the wire 41. Therefore, generation of detection errors due to noise can be suppressed.

（第２実施形態）
本発明の第２実施形態について説明する。本実施形態は、第１実施形態に対して導体パターン３８の形状を変更したものであり、その他に関しては第１実施形態と同様であるため、ここでは説明を省略する。 (Second Embodiment)
A second embodiment of the present invention will be described. In the present embodiment, the shape of the conductor pattern 38 is changed with respect to the first embodiment, and the other aspects are the same as those in the first embodiment, and thus the description thereof is omitted here.

図４に示されるように、本実施形態では、導体パターン３８は、第１、第２導体パターン３８ａ、３８ｂおよび第１接続部３９ａを有している。   As shown in FIG. 4, in the present embodiment, the conductor pattern 38 includes first and second conductor patterns 38a and 38b and a first connection portion 39a.

具体的には、第１導体パターン３８ａは、底部３２ｂの内壁面のうちワイヤ４１と対向する部分に形成された平面矩形状とされている。また、第２導体パターン３８ｂは、第１導体パターン３８ａを囲む平面Ｕ字状とされ、第１導体パターン３８ａより面積が大きくされている。そして、第１接続部３９ｂは、第１、第２導体パターン３８ａ、３８ｂの間に形成されて第１、第２導体パターン３８ａ、３８ｂを電気的に接続しており、電流が流れたときに第１、第２導体パターン３８ａ、３８ｂよりも電流密度が高くなる形状とされている。つまり、第１接続部３９ａは、第１、第２導体パターン３８ａ、３８ｂより電流経路が細くされ、第１、第２導体パターン３８ａ、３９より抵抗が高くされている。   Specifically, the first conductor pattern 38a has a planar rectangular shape formed on a portion of the inner wall surface of the bottom portion 32b facing the wire 41. The second conductor pattern 38b has a planar U shape surrounding the first conductor pattern 38a, and has a larger area than the first conductor pattern 38a. The first connection portion 39b is formed between the first and second conductor patterns 38a and 38b to electrically connect the first and second conductor patterns 38a and 38b, and when a current flows. The current density is higher than that of the first and second conductor patterns 38a and 38b. That is, the first connection portion 39a has a current path narrower than that of the first and second conductor patterns 38a and 38b, and has a higher resistance than the first and second conductor patterns 38a and 39.

また、第２内部配線３７ｂは、第２導体パターン３８ｂと接続されている。具体的には、第２内部配線３７ｂは、第２導体パターン３８ｂのうち第１接続部３９ａと接続される部分に接続されている。言い換えると、第２内部配線３７ｂは、第２導体パターン３８ｂのうち第１接続部３９ａと接続される部分の近傍と接続されている。   The second internal wiring 37b is connected to the second conductor pattern 38b. Specifically, the second internal wiring 37b is connected to a portion of the second conductor pattern 38b that is connected to the first connection portion 39a. In other words, the second internal wiring 37b is connected to the vicinity of the portion of the second conductor pattern 38b that is connected to the first connection portion 39a.

これによれば、第１導体パターン３８ａより第２導体パターン３８ｂの方が面積が大きいため、第１導体パターン３８ａよりも第２導体パターン３８ｂにノイズが侵入し易くなる。言い換えると、ワイヤ４１に近い第１導体パターン３８ａよりもワイヤ４１から遠い第２導体パターン３８ｂにノイズが侵入し易くなる。このため、さらに、ワイヤ４１にノイズが侵入することを抑制できる。   According to this, since the area of the second conductor pattern 38b is larger than that of the first conductor pattern 38a, it becomes easier for noise to enter the second conductor pattern 38b than the first conductor pattern 38a. In other words, it becomes easier for noise to enter the second conductor pattern 38b farther from the wire 41 than the first conductor pattern 38a closer to the wire 41. For this reason, it is possible to further prevent noise from entering the wire 41.

また、第１接続部３９ａは、第１、第２導体パターン３８ａ、３８ｂより電流が流れたときの電流密度が高くされているため、第２導体パターン３８ｂに侵入したノイズが第１導体パターン３８ａに流れることを抑制できる。   In addition, since the first connecting portion 39a has a higher current density when current flows from the first and second conductor patterns 38a and 38b, noise that has entered the second conductor pattern 38b is caused by the first conductor pattern 38a. It can suppress flowing into the.

さらに、第２内部配線３７ｂは、第２導体パターン３８ｂのうち第１接続部３９ａと接続される部分と接続されている。このため、第２導体パターン３８ｂに侵入したノイズは、第１パターン３８ａよりも第２内部配線３７ｂを介して第２外部端子３５ｂに流れ易くなり、第２導体パターン３８ｂに侵入したノイズが第１導体パターン３８ａに流れることを抑制できる。   Furthermore, the second internal wiring 37b is connected to a portion of the second conductor pattern 38b that is connected to the first connection portion 39a. Therefore, the noise that has entered the second conductor pattern 38b is more likely to flow to the second external terminal 35b via the second internal wiring 37b than the first pattern 38a, and the noise that has entered the second conductor pattern 38b is the first. It can suppress flowing into the conductor pattern 38a.

さらに、導体パターン３８を第１導体パターン３８ａおよび第２導体パターン３８ｂにて構成しているため、第１導体パターン３８ａおよび第２導体パターン３８ｂによって寄生容量が形成される。このため、寄生容量によっても第１導体パターン３８ａにノイズが侵入することを抑制できる。   Furthermore, since the conductor pattern 38 is composed of the first conductor pattern 38a and the second conductor pattern 38b, a parasitic capacitance is formed by the first conductor pattern 38a and the second conductor pattern 38b. For this reason, it is possible to suppress noise from entering the first conductor pattern 38a due to the parasitic capacitance.

（第３実施形態）
本発明の第３実施形態について説明する。本実施形態は、第２実施形態に対して導体パターン３８の形状を変更したものであり、その他に関しては第２実施形態と同様であるため、ここでは説明を省略する。 (Third embodiment)
A third embodiment of the present invention will be described. In the present embodiment, the shape of the conductor pattern 38 is changed with respect to the second embodiment, and the other aspects are the same as those of the second embodiment, and thus the description thereof is omitted here.

図５に示されるように、本実施形態では、導体パターンは、第１〜第３導体パターン３８ａ〜３８ｃおよび第１、第２接続部３９ａ、３９ｂを有している。   As shown in FIG. 5, in the present embodiment, the conductor pattern includes first to third conductor patterns 38a to 38c and first and second connection portions 39a and 39b.

具体的には、第３導体パターン３８ｃは、第１導体パターン３８ａと第２導体パターン３８ｂとの間に配置され、第１導体パターン３８ａより面積が小さくされている。また、第２接続部３９ｂは、第１、第３導体パターン３８ａ、３８ｃの間に形成されて第１、第３導体パターン３８ａ、３８ｃを電気的に接続しており、電流が流れたときに第１、第３導体パターン３８ａ、３８ｃよりも電流密度が高くなる形状とされている。つまり、第２接続部３９ｂは、第１、第３導体パターン３８ａ、３８ｃより電流経路が細くされ、第１、第２導体パターン３８ａ、３８ｂより抵抗が高くされている。   Specifically, the third conductor pattern 38c is disposed between the first conductor pattern 38a and the second conductor pattern 38b, and has a smaller area than the first conductor pattern 38a. The second connection portion 39b is formed between the first and third conductor patterns 38a and 38c and electrically connects the first and third conductor patterns 38a and 38c. The current density is higher than that of the first and third conductor patterns 38a and 38c. That is, the second connection portion 39b has a narrower current path than the first and third conductor patterns 38a and 38c, and has a higher resistance than the first and second conductor patterns 38a and 38b.

これによれば、第１導体パターン３８ａと第２導体パターン３８ｂとの間に第１、第２導体パターン３８ａ、３８ｂより面積が小さくされた第３導体パターン３８ｃが配置されている。このため、さらに、第２導体パターン３８ｂに侵入したノイズが第１導体パターン３８ａに侵入することを抑制できる。   According to this, the third conductor pattern 38c having a smaller area than the first and second conductor patterns 38a and 38b is disposed between the first conductor pattern 38a and the second conductor pattern 38b. For this reason, it is possible to further suppress the noise that has entered the second conductor pattern 38b from entering the first conductor pattern 38a.

（他の実施形態）
本発明は上記した実施形態に限定されるものではなく、特許請求の範囲に記載した範囲内において適宜変更が可能である。 (Other embodiments)
The present invention is not limited to the embodiment described above, and can be appropriately changed within the scope described in the claims.

例えば、上記各実施形態において、導体パターン３８を側部３２ａの内壁面（凹部３１の側面）のみに形成してもよい。また、導体パターン３８を側部３２ａおよび底部３２ｂの内壁面に形成してもよい。   For example, in each of the above embodiments, the conductor pattern 38 may be formed only on the inner wall surface of the side portion 32a (the side surface of the recess 31). Moreover, you may form the conductor pattern 38 in the inner wall face of the side part 32a and the bottom part 32b.

また、上記各実施形態において、第２内部配線３７ｂを複数備えてもよい。この場合、上記第２、第３実施形態では、１つの第２内部配線３７ｂが第２導体パターン３８ｂと接続されることが好ましい。   In each of the above embodiments, a plurality of second internal wirings 37b may be provided. In this case, in the second and third embodiments, it is preferable that one second internal wiring 37b is connected to the second conductor pattern 38b.

そして、上記各実施形態において、センサ部１０と回路部２０とを接続する導電性部材はワイヤ４１でなくてもよく、例えば、導電性部材としてはんだを用いてもよい。つまり、センサ部１０は回路部２０にフリップチップ実装されていてもよい。   In each of the above embodiments, the conductive member that connects the sensor unit 10 and the circuit unit 20 may not be the wire 41. For example, solder may be used as the conductive member. That is, the sensor unit 10 may be flip-chip mounted on the circuit unit 20.

さらに、上記各実施形態において、センサ部１０および回路部２０は積層されていなくてもよい。つまり、センサ部１０および回路部２０が共に底部３２ｂに接着剤５１、５２を介して搭載されていてもよい。そして、センサ部１０は、パッケージに収容されていなくてもよい。   Furthermore, in each said embodiment, the sensor part 10 and the circuit part 20 do not need to be laminated | stacked. That is, both the sensor unit 10 and the circuit unit 20 may be mounted on the bottom 32b via the adhesives 51 and 52. And the sensor part 10 does not need to be accommodated in the package.

また、上記第２実施形態において、第２内部配線３７ｂは、第１導体パターン３８ａと接続されていてもよい。そして、上記第３実施形態において、第２内部配線３７ｂは、第１導体パターン３８ａまたは第３導体パターン３８ｃと接続されていてもよい。さらに、上記第２、第３実施形態において、第２内部配線３７ｂは、第２導体パターン３８ｂのうち第１接続部３９ａと接続される部分の近傍以外の部分に接続されていてもよい。このような力学量センサとしても、導体パターン３８が形成されていることにより、ワイヤ４１にノイズが侵入することを抑制でき、ノイズによって検出誤差が発生することを抑制できる。   In the second embodiment, the second internal wiring 37b may be connected to the first conductor pattern 38a. In the third embodiment, the second internal wiring 37b may be connected to the first conductor pattern 38a or the third conductor pattern 38c. Furthermore, in the second and third embodiments, the second internal wiring 37b may be connected to a portion of the second conductor pattern 38b other than the vicinity of the portion connected to the first connection portion 39a. Even in such a mechanical quantity sensor, since the conductor pattern 38 is formed, it is possible to suppress noise from entering the wire 41 and to suppress occurrence of a detection error due to the noise.

１０ センサ部
２０ 回路部
３０ ケース
３１ 凹部
３５ｂ 外部端子
３７ｂ 内部配線
３８ 導体パターン
４１ 導電性部材
DESCRIPTION OF SYMBOLS 10 Sensor part 20 Circuit part 30 Case 31 Recess 35b External terminal 37b Internal wiring 38 Conductor pattern 41 Conductive member

Claims (8)

物理量に応じて変化する容量に基づいたセンサ信号を出力する容量式のセンサ部（１０）と、
前記センサ信号に対して所定の処理を行う回路部（２０）と、
前記センサ部と前記回路部とを電気的に接続する導電性部材（４１）と、
一面に凹部（３１）が形成され、前記凹部に前記センサ部および前記回路部が配置されるケース（３０）と、を備え、
前記ケースは、前記凹部の壁面に導体パターン（３８）が形成され、当該ケースの外壁面に外部のグランドと接続される外部端子（３５ｂ）が形成され、当該ケースの内壁面と外壁面との間に前記導体パターンと前記外部端子とを電気的に接続する内部配線（３７ｂ）が形成されていることを特徴とする力学量センサ。 A capacitive sensor unit (10) that outputs a sensor signal based on a capacitance that varies according to a physical quantity;
A circuit unit (20) for performing predetermined processing on the sensor signal;
A conductive member (41) for electrically connecting the sensor unit and the circuit unit;
A recess (31) is formed on one surface, and the sensor part and the circuit part are arranged in the recess (30),
In the case, a conductor pattern (38) is formed on the wall surface of the recess, an external terminal (35b) connected to an external ground is formed on the outer wall surface of the case, and the inner wall surface and the outer wall surface of the case are formed. An internal wiring (37b) for electrically connecting the conductor pattern and the external terminal is formed between the mechanical quantity sensor. 前記導体パターンは、前記凹部の底面に形成されていることを特徴とする請求項１に記載の力学量センサ。   The mechanical quantity sensor according to claim 1, wherein the conductor pattern is formed on a bottom surface of the concave portion. 前記導体パターンは、前記凹部の底面のうち前記導電性部材と対向する部分に形成された第１導体パターン（３８ａ）と、前記凹部の底面のうち前記導電性部材と対向する部分と異なる部分に形成され、前記第１導体パターンより面積が大きくされた第２導体パターン（３８ｂ）と、前記第１導体パターンと前記第２導体パターンとを接続し、電流が流れたときに前記第１、第２導体パターンより電流密度が高くなる第１接続部（３９ａ）とを有していることを特徴とする請求項２に記載の力学量センサ。   The conductor pattern includes a first conductor pattern (38a) formed on a portion of the bottom surface of the recess facing the conductive member, and a portion of the bottom surface of the recess different from the portion facing the conductive member. A second conductor pattern (38b) formed and having an area larger than that of the first conductor pattern is connected to the first conductor pattern and the second conductor pattern, and when the current flows, the first and second conductor patterns are connected. The mechanical quantity sensor according to claim 2, further comprising a first connection portion (39a) having a current density higher than that of the two-conductor pattern. 前記導体パターンは、前記凹部の底面のうち前記導電性部材と対向する部分に形成された第１導体パターン（３８ａ）と、前記凹部の底面のうち前記導電性部材と対向する部分と異なる部分に形成され、前記第１導体パターンより面積が大きくされた第２導体パターン（３８ｂ）と、前記第１導体パターンと前記第２導体パターンとの間に形成され、前記第１導体パターンより面積が小さくされた第３導体パターン（３８ｃ）と、前記第２導体パターンと前記第３導体パターンとを接続し、電流が流れたときに前記第１〜第３導体パターンより電流密度が高くなる第１接続部（３９ａ）と、前記第１導体パターンと前記第３導体パターンとを接続し、電流が流れたときに前記第１〜第３導体パターンより電流密度が高くなる第２接続部（３９ｂ）と、を有していることを特徴とする請求項２に記載の力学量センサ。   The conductor pattern includes a first conductor pattern (38a) formed on a portion of the bottom surface of the recess facing the conductive member, and a portion of the bottom surface of the recess different from the portion facing the conductive member. A second conductor pattern (38b) formed and having an area larger than that of the first conductor pattern, and formed between the first conductor pattern and the second conductor pattern, and having an area smaller than that of the first conductor pattern. A first connection in which the current density is higher than that of the first to third conductor patterns when the third conductor pattern (38c) formed is connected to the second conductor pattern and the third conductor pattern and a current flows. A second connection portion (39a) that connects the first conductor pattern and the third conductor pattern to each other and has a higher current density than the first to third conductor patterns when a current flows. Dynamic quantity sensor according to claim 2, characterized in that) and has a. 前記内部配線は、前記第２導体パターンと接続されていることを特徴とする請求項３または４に記載の力学量センサ。   The mechanical quantity sensor according to claim 3 or 4, wherein the internal wiring is connected to the second conductor pattern. 前記内部配線は、前記第２導体パターンのうち前記第１接続部と接続される部分と接続されていることを特徴とする請求項３ないし５のいずれか１つに記載の力学量センサ。   The mechanical quantity sensor according to claim 3, wherein the internal wiring is connected to a portion of the second conductor pattern that is connected to the first connection portion. 前記内部配線は、複数形成されていることを特徴とする請求項１ないし６のいずれか１つに記載の力学量センサ。   The mechanical quantity sensor according to claim 1, wherein a plurality of the internal wirings are formed. 前記センサ部は、前記回路部上に積層されていることを特徴とする請求項１ないし７のいずれか１つに記載の力学量センサ。
The mechanical quantity sensor according to claim 1, wherein the sensor unit is stacked on the circuit unit.
JP2013077936A 2013-04-03 2013-04-03 Dynamic quantity sensor Pending JP2014202562A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017026336A (en) * 2015-07-16 2017-02-02 セイコーエプソン株式会社 Electronic device, electronic apparatus, and mobile body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017026336A (en) * 2015-07-16 2017-02-02 セイコーエプソン株式会社 Electronic device, electronic apparatus, and mobile body

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