JP2014199881A - Liquid processing device, liquid processing method, and measuring tool - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a technique capable of safely measuring a discharge rate of a process liquid to a substrate in a liquid processing device which discharges the process liquid to the substrate and processes the liquid.SOLUTION: A liquid processing device is configured to comprise: a substrate holding part which holds a substrate; a process liquid discharge unit which discharges a process liquid to a surface of the substrate held in the substrate holding part and processes the liquid; an imaging unit which images a recess in which the process liquid discharged from the process liquid discharge unit to check a discharge rate of the process liquid to the substrate is stored so that the discharge rate becomes a preset amount, and acquires image data; and a data processing unit which measures the amount of process liquid stored in the recess on the basis of the image data. This configuration eliminates the need that an operator enters the device.

Description

  The present invention relates to a liquid processing apparatus, a liquid processing method, and a measuring jig used in these apparatuses and methods for performing liquid processing by discharging a processing liquid onto the surface of a substrate.

  In a photolithography process in a semiconductor device manufacturing process, a resist film is formed on the surface of a semiconductor wafer (hereinafter referred to as “wafer”). For the formation of the resist film, a technique called spin coating is widely used. This method is performed by discharging the resist solution from the nozzle to the center of the wafer while rotating the wafer held by the spin chuck, and spreading the resist solution to the peripheral edge of the wafer by centrifugal force.

  In order to control the film thickness of the resist film thus formed with high accuracy, it is required to control the discharge amount of the resist solution with high accuracy. Therefore, for the resist coating apparatus that forms the resist film, for example, the discharge amount is measured and corrected regularly.

  In performing this work, first, the operation of a wafer transport mechanism for delivering the wafer to the resist coating apparatus, the operation of a moving mechanism for moving the nozzle in the resist coating apparatus, and the operation of the spin chuck, Stop. Accordingly, an operator is prevented from being injured by being sandwiched between the wafer transfer mechanism or the moving mechanism and the constituent members in the apparatus, and being injured by the rotation of the spin chuck. Thereafter, the door of the casing that partitions the inside and outside of the apparatus is opened, an operator enters the apparatus, and the nozzle discharges an amount of resist solution that is discharged, for example, in one film formation process. Receive in a container such as a graduated cylinder. Then, for example, the resist solution is transferred to an electronic balance and the amount thereof is measured. Based on the measurement result, the operation parameter of the pump that supplies the resist solution to the nozzle is corrected as necessary, and the discharge amount of the resist solution when the film is formed on the wafer is corrected. Patent Document 1 describes that a worker receives a resist solution by a measuring cylinder as described above.

  However, in the above measurement and correction operations, the discharged resist solution is scattered and applied to the worker, or operations for stopping the operations of the wafer transfer mechanism, the nozzle movement mechanism, and the spin chuck are performed. If it is mistaken, the worker may be injured. Therefore, there is a demand for a technique that can measure and correct the discharge amount of the processing liquid such as the resist liquid with higher safety.

JP 2012-217857 A

  The present invention has been made under such circumstances, and the object of the present invention is to provide a technique capable of safely measuring the discharge amount of the processing liquid onto the substrate in a liquid processing apparatus that performs processing by discharging the processing liquid onto the substrate. Is to provide.

The liquid processing apparatus of the present invention includes a substrate holding unit for holding a substrate,
A processing liquid discharge section for discharging a processing liquid onto the surface of the substrate held by the substrate holding section to perform liquid processing;
An imaging unit for acquiring image data by imaging a recess in which the processing liquid discharged from the processing liquid discharging unit is stored in order to inspect the discharge amount of the processing liquid onto the substrate;
And a data processing unit that measures the amount of the processing liquid stored in the concave portion based on the image data.

  According to the present invention, the processing liquid discharged into the inspection recess is imaged to acquire image data, and the amount of the processing liquid stored in the recess is measured based on the image data. Therefore, it is not necessary for an operator to enter the apparatus in order to measure the discharge amount, and to collect the discharged processing liquid by receiving it in the container, so that the safety of the inspection can be improved.

It is a perspective view of the resist coating apparatus which concerns on the liquid processing apparatus of this invention. It is a vertical side view of the resist coating apparatus. It is a side view of a nozzle and a camera provided in the resist coating apparatus. It is a perspective view of the measuring jig used for the said resist coating apparatus. It is explanatory drawing which shows the mode of the said resist liquid discharged to the said jig for a measurement. It is explanatory drawing for demonstrating the calculation method of the quantity of the said resist liquid from the acquired image data. It is explanatory drawing for demonstrating the calculation method of the quantity of the said resist liquid from the acquired image data. It is explanatory drawing for demonstrating the calculation method of the quantity of the said resist liquid from the acquired image data. It is a block diagram of the control part provided in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that the discharge amount of a resist liquid is test | inspected in the said resist coating apparatus. It is process drawing which shows a mode that a resist film is formed with the said resist coating apparatus. It is process drawing which shows a mode that a resist film is formed with the said resist coating apparatus. It is process drawing which shows a mode that a resist film is formed with the said resist coating apparatus. It is a perspective view of the jig for measurement of other composition. It is a perspective view which shows a mode that a resist liquid is discharged to the said jig for a measurement. It is a vertical side view of the recessed part of the said measuring jig. It is a perspective view which shows the other example of the said recessed part. It is a vertical side view of the recessed part of the said measuring jig. It is a perspective view which shows a mode that a resist liquid is discharged to the jig for a measurement provided with the said recessed part. It is explanatory drawing which shows the other example of a recessed part. It is a perspective view which shows the other example of a recessed part. It is a perspective view which shows the state by which the resist liquid was stored by the said recessed part. It is a perspective view which shows the further another example of a recessed part. It is a perspective view which shows the other example of a resist coating device. It is a perspective view which shows the further another example of the said resist coating device. It is a top view of the coating and developing apparatus to which the resist coating apparatus is applied. It is a perspective view of the coating and developing apparatus. It is a schematic longitudinal side view of the coating and developing apparatus.

  A resist coating apparatus 1 which is an example of the liquid processing apparatus of the present invention will be described with reference to the perspective view of FIG. 1 and the longitudinal side view of FIG. The resist coating apparatus 1 forms a resist film on the wafer W by the above-described spin coating. When the wafer W is not inspected for processing, the amount of the resist solution discharged when processing the wafer W is measured by using a jig described later. It is configured to be corrected.

The resist coating apparatus 1 includes a cup unit 11 and a nozzle unit 31. The cup unit 11 includes a spin chuck 12 that is a substrate holding unit that sucks and horizontally holds the center of the back surface of the wafer W, and the spin chuck 12 is connected to a rotation mechanism 14 via a rotation shaft 13 that extends vertically. Yes. The rotation mechanism 14 includes a rotation drive source such as a motor, and can rotate the spin chuck 12 at a predetermined speed.

  A circular ring-shaped partition plate 15 is provided below the spin chuck 12. On the peripheral edge side of the partition plate 15, a liquid guide portion 16 having a mountain shape in cross section is formed. A vertical wall 17 is formed downward from the outer peripheral edge of the liquid guide portion 16. Further, three elevating pins 18 are provided in the circumferential direction of the partition plate 15 through the partition plate 15. The elevating pin 18 is configured to be movable up and down by an elevating mechanism 19.

  Around the spin chuck 12, there is provided a cup body 21 that is open on the upper side so as to surround the spin chuck 12, and the upper end side of the side peripheral surface of the cup body 21 forms an inclined portion that is inclined inward. On the bottom side of the cup body 21, there is provided a liquid receiving portion 22 that forms an annular recess that opens upward. The liquid receiving portion 22 is partitioned into an outer region and an inner region over the entire circumference on the lower side of the periphery of the wafer W when the vertical wall 17 enters. A drainage port 23 for discharging a stored liquid such as a resist solution is provided at the bottom of the outer region. An exhaust pipe 24 extending upward from the bottom is provided in the inner region, and the inside of the cup body 21 is exhausted by the exhaust pipe 24.

  Next, the nozzle unit 31 will be described. The nozzle unit 31 includes a drive mechanism 32, an arm 33, and a nozzle holding unit 41. The drive mechanism 32 is configured to be movable in the lateral direction along the guide 34 shown in FIG. The base end side of the arm 33 is connected to the drive mechanism 32, and the nozzle holding portion 41 is provided on the distal end side. The arm 33 extends horizontally so as to be orthogonal to the guide 34 and is configured to be movable up and down by the drive mechanism 32.

  The nozzle holding portion 41 is formed in a square shape, and below it are provided ten resist solution discharge nozzles 42A to 42J forming a processing solution discharge portion and one thinner discharge nozzle 42K. These discharge nozzles 42 </ b> A to 42 </ b> K are arranged in the horizontal direction along the moving direction of the nozzle holding portion 41, and each discharges liquid downward. 1 and 2, some of the discharge nozzles 42 </ b> A to 42 </ b> K are not shown.

  One end of processing liquid supply pipes 43A to 43K for supplying a resist liquid or a thinner as a processing liquid is connected to each of the discharge nozzles 42A to 42K. The other ends of the processing liquid supply pipes 43A to 43K are connected to the processing liquid supply mechanisms 44A to 44K, respectively. Each of the processing liquid supply mechanisms 44A to 44K includes a storage section that stores the processing liquid supplied to the discharge nozzles 42A to 42K, and a pump that pumps the processing liquid in the storage section to the discharge nozzle 42. . Resist solutions are stored in the storage portions of the processing solution supply mechanisms 44A to 44J, and the types of these resist solutions are different from each other. The thinner is stored in the storage portion of the processing liquid supply mechanism 44K. Hereinafter, the processing liquid supply mechanisms 44A to 44J are referred to as resist liquid supply mechanisms 44A to 44J, and the processing liquid supply mechanism 44K is referred to as a thinner supply mechanism 44K.

  The pump is, for example, a diaphragm pump. That is, one side of the diaphragm forms a flow path for the processing liquid, and the other side faces the chamber in which fluid is supplied and discharged. When the processing liquid is discharged, the fluid is supplied into the chamber, the pressure rises, the diaphragm is bent so that the flow path is narrowed, and the processing liquid is pumped downstream. That is, the higher the pressure, the greater the degree of narrowing of the flow path, and the greater the amount of processing liquid discharged from the discharge nozzle 42 to which the pump is connected. The pressure in the chamber set in advance when discharging is used as the set pressure of the pump. The operation of each pump of the resist solution supply mechanisms 44A to 44J is controlled by a control unit 5 described later, and the set pressure of the pump is individually set for each of the resist solution supply mechanisms 44A to 44J.

  As shown in FIG. 3, a camera 35 as an imaging unit is provided below the arm 33. As will be described later, when the resist solution is supplied from the resist solution discharge nozzles 42 </ b> A to 42 </ b> J to the recess 61 of the measurement jig 6, the optical axis 36 of the lens of the camera 35 is captured so that the resist solution in the recess 61 can be imaged. Is directed obliquely downward and forms a predetermined angle A with the horizontal plane. The camera 35 transmits the image data obtained by the imaging to the control unit 5.

  As shown in FIG. 1, a cup-shaped standby portion 37 is provided outside the cup body 21. When the wafer W is not processed by each of the discharge nozzles 42 </ b> A to 42 </ b> K, the nozzle holding unit 41 is positioned on the standby unit 37 and stands by.

  1 to 3 show a measuring jig 6. This measuring jig 6 is a jig used for measuring the discharge amount of the resist solution, and is transferred to the resist coating apparatus 1 by a substrate transfer mechanism (not shown) in the same manner as the wafer W. The measuring jig 6 is formed in a disk shape having the same diameter as the wafer W, for example. As a difference in shape from the wafer W, a recess 61 is provided on the surface of the measuring jig 6. As shown in FIG. 4, the resist solution 45 is discharged from the resist solution discharge nozzles 42 </ b> A to 42 </ b> J into the recess 61, and the resist solution 45 is stored. For example, the resist solution 45 is discharged to the recess 61 so that the discharge amount of the resist solution 45 becomes a target value set so as to be discharged when processing the wafer W, for example.

  For example, ten recesses 61 are provided, and the resist solutions of the respective discharge nozzles 42 </ b> A to 42 </ b> J are stored in different recesses 61. The recessed part 61 is formed in the shape of a right cone with the apex facing downward. The surface of the recess 61 is coated with a water-repellent film made of, for example, tetrafluoroethylene in order to easily remove the resist solution 45 as described later. FIG. 2 shows a longitudinal side surface of the recess 61 cut along a vertical plane passing through the apex of the cone at the tip of the chain line arrow. In the drawing, the angle formed between the side surface of the cone and the bottom surface of the cone as viewed in the cross section is indicated as θ.

  As an example, the uppermost part of FIG. 5 shows the resist solution 45 discharged from the resist solution discharge nozzle 42 </ b> J to the recess 61. The resist solution 45 deposited in the recess 61 is scattered in the recess 61 by the discharge pressure. When the discharge of the resist solution 45 from the resist solution discharge nozzle 42J is stopped, the liquid surface of the resist solution 45 is stabilized, and the resist solution 45 attached to the side surface of the recess 61 slides down on the side surface due to gravity and collects downward. . Then, the resist solution 45 forms a substantially conical liquid pool according to the shape of the recess 61. The recess 61 in which the liquid reservoir of the resist solution 45 is formed in the second stage from the top of FIG. 5 is shown, and the resist liquid 45 that has become the liquid pool is shown in the third stage from the top of FIG. ing.

  Describing in detail the shape of the liquid pool of the resist solution 45, the bottom surface of the inverted cone is slightly raised in a dome shape upward due to the surface tension of the resist solution 45. The bottom of FIG. 5 shows the liquid pool divided into two along a horizontal plane passing through the upper end of the liquid pool in contact with the side surface of the recess 61. The liquid pool divided in this way is referred to as a lower layer portion 46 and an upper layer portion 47. The control unit 5 calculates the respective volumes V1 and V2 of the lower layer part 46 and the upper layer part 47, and sums the calculated volumes V1 and V2 to calculate the amount V of the resist solution 45 discharged to the recess 61. To do. As shown in the drawing, the lower layer portion 46 is an inverted cone having a concave portion 61 and similar surfaces. The upper layer part 47 regards the spheroid as a semi-ellipsoid that is one of two halves along the plane so that the cut surface is a circle, and calculates the volume V2.

  A method for calculating the volume V1 of the lower layer 46 by the control unit 5 will be described with reference to FIG. In the upper part of FIG. 6, three images of the recess 61 obtained by the camera 35 are illustrated, and different amounts of resist solution 45 are stored. The control unit 5 binarizes the acquired image in order to facilitate the identification of the resist solution 45 in the image. The middle part of FIG. 6 shows the binarized image of each image in the upper part. By the binarization process, the resist solution 45 in the image is expressed in black, and the surface of the measuring jig 6 is expressed in white. However, for the convenience of illustration, the black resist solution 45 is shown in a relatively dark gray scale in the middle of FIG.

The resist solution 45 in the binarized image in this way has a substantially elliptical shape that is long in the horizontal direction. The control unit 5 calculates the length 2r between the one end and the other end in the lateral direction for the resist solution 45 of this image, and further calculates r which is a ½ value thereof. In FIG. 6, the lower part shows a schematic view of the side surface of the lower layer part 46 of the liquid pool of the resist solution 45. As shown in this schematic diagram, r is the radius of the bottom surface of the cone which is the lower layer 46. In addition, the value of the angle θ shown in FIG. Based on these r and θ, the control unit 5 calculates the volume V1 of the lower layer part 46 by the following formula 1. In Expression 1, h is the height of the lower layer portion 46.
V1 = 1 / 3πr ² h = 1 / 3πr ² · r · tan θ Equation 1

  The upper part of FIG. 7 shows images of three recesses 61 in which different amounts of resist solution 45 are stored as in the upper part of FIG. 6, and the middle part of FIG. An image obtained by binarization processing is shown. In the lower part of FIG. 7, when each amount of resist solution 45 is stored as in the upper part of FIG. 7, the upper layer portion 47 of the stored resist solution 45 is temporarily imaged and the binarization process is performed. The image obtained as a result of performing is shown. As shown in the lower part of FIG. 7, the height n of the upper layer portion 47 varies depending on the amount of the resist solution 45 stored in the recess 61. Further, since the camera 35 images the concave portion 61 from obliquely above, the upper layer portion 47 is imaged. However, since the image is captured from such a direction, the acquired image of the resist solution 45 in the middle stage of FIG. Is different from the height n of the upper layer portion 47 in the lower stage of FIG.

  The control unit 5 calculates the height n of the upper layer portion 47 from the vertical width m of the image in order to calculate the volume V2 of the upper layer portion 47. A method for calculating the height n will be described with reference to FIG. The upper part of FIG. 8 is an image of the resist solution 45 captured by the camera 35 and binarized. In the middle part of FIG. 8, auxiliary lines 62 and 63 are attached to the image of the resist solution 45 in the upper part for explanation. The auxiliary line 62 indicated by a chain line is a straight line drawn in the horizontal direction so as to pass through the point P1 at one end of the resist solution 45 and the point P2 at the other end in the image. The length between the points P1 and P2 is 2r. It is assumed that the outline of the resist solution 45 is divided into two vertically by the auxiliary line 62, and the divided lower outline is 64 and the upper outline is 65. The auxiliary line 63 indicated by a dotted line is a curve drawn so as to be symmetric with the outline 65 with respect to the auxiliary line 62. That is, the distance h1 between the auxiliary line 62 and the outline 64 at the left and right center of the image of the resist solution 45 and the distance h2 between the auxiliary line 62 and the auxiliary line 63 are equal to each other.

  A region surrounded by the auxiliary line 63 and the outer shape line 64 is a liquid level when the resist solution 45 has no surface tension, that is, the bottom surface of the cone of the lower layer portion 46 described above. That is, in the image of the resist solution 45, a region surrounded by the outline 65 and the auxiliary line 63 indicated by hatching in the lower part of FIG. 8 corresponds to the upper layer portion 47. That is, the distance between the outline 65 and the auxiliary line 63 at the left and right center of the image of the resist solution 45 shown as h3 in the drawing corresponds to the height n of the upper layer portion 47 described in the lower part of FIG. Here, h1 + h2 (= h1) + h3 = the vertical width m of the resist solution 45 in the image. The interval h3 corresponds to the n, and also corresponds to the angle A of the optical axis 36 of the camera 35 described with reference to FIG.

After the binarization processing of the image as described above, the control unit 5 sequentially calculates the intervals h1, h2, h3 from the image, and then calculates the height n = k · h3 to calculate the n. calculate. k is a coefficient set in advance according to the angle A in order to convert the interval h3 into the height n. Thus, after calculating the height n of the upper layer part 47, the volume V2 of the upper layer part 47 is calculated by the following formula 2. Then, the volume V1 + V2 is calculated as described above, and this calculated value is determined as the discharge amount V of the resist solution 45.
V2 = 4 / 3πr ² n · 1/2 = 2 / 3πr ² n Equation 2

  Next, with reference to FIG. 9, the control unit 5 that is a computer and forms a data processing unit and a discharge amount correction mechanism will be described. The control unit 5 includes a program storage unit 51 and a CPU 52, which are connected to a bus 53. Each part of the resist coating apparatus 1 described above, such as the camera 35, the rotation mechanism 14, the drive mechanism 32, the resist solution supply mechanisms 44A to 44J, and the thinner supply mechanism 44K, is connected to the bus 53. In FIG. 9, these parts other than the resist solution supply mechanisms 44 </ b> A to 44 </ b> J and the camera 35 are not shown. The program storage unit 51 includes a computer storage medium such as a flexible disk, a compact disk, a hard disk, an MO (magneto-optical disk), and a memory card. The program 54 stored in the storage medium is installed in the control unit 5 while being stored in such a storage medium.

  The program 54 transmits a control signal to each part of the resist coating apparatus 1 such as the rotation mechanism 14, the drive mechanism 32, the resist solution supply mechanisms 44A to 44J, and the thinner supply mechanism 44K to control the operation thereof. The program 54 incorporates instructions (each step) so that each operation in the measurement of the resist solution discharge amount, correction of the resist solution discharge amount described below, and resist coating processing on the wafer W described later can be performed. It is. The CPU 52 executes various calculations in order to output the control signal as described above.

  The control unit 5 is connected to an image storage unit 55, a pump pressure storage unit 56, a target discharge amount storage unit 57, and a correlation storage unit 58, and these are connected to the bus 53. The image storage unit 55 stores the image data acquired by the camera 35. The processing described with reference to FIGS. 6 to 8 is performed on the stored image data, and the discharge amount V of the resist solution 45 is calculated. The pressure storage unit 56 of the pump individually stores the set pressure of the pump when the resist solution 45 is discharged as described above for the resist solution supply mechanisms 44A to 44J. The set pressure of the pump can be changed by the control unit 5.

  The target discharge amount storage unit 57 stores a target value of the amount of resist liquid discharged when processing the wafer W. The set pressure of the pump stored in the pressure storage unit 56 is a pressure set so that the discharge amount from each of the resist discharge nozzles 42A to 42J becomes the target value.

  The correlation storage unit 58 stores a correlation between the displacement of the resist solution discharge amount and the pressure correction value. The deviation of the discharge amount is the target value of the discharge amount of the resist solution stored in the target discharge amount storage unit−the discharge amount V calculated from the image data. In this example, the correlation is shown in the figure as being proportional.

  The steps for measuring and correcting the discharge amount of the resist solution in the resist coating apparatus 1 will be described in order with reference to FIGS. First, the measurement jig 6 is transferred from the outside of the resist coating apparatus 1 to the resist coating apparatus 1 by a substrate transfer mechanism (not shown), and the center of the back surface is transferred to and held by the spin chuck 12. For example, the measurement jig 6 is transported by the substrate transport mechanism in a state of being directed in a predetermined direction so that the concave portions 61 are positioned at predetermined positions when held in this manner. Then, the nozzle holding unit 41 moves from the standby unit 37 onto the measuring jig 6, and the resist solution discharge nozzle 42A is positioned above the one recess 61 and stops (FIG. 10).

  The pressure of the pump of the resist solution supply mechanism 44A to which the resist solution discharge nozzle 42A is connected becomes the set pressure stored in the pressure storage unit 56, and the resist solution 45 is discharged into the recess 61 from the resist solution discharge nozzle 42A. (FIG. 11). After a predetermined time has elapsed from the start of discharge, the discharge of the resist solution 45 is stopped. Then, when a predetermined time has elapsed from the stop of discharge and the liquid level of the resist solution 45 in the recess 61 is stabilized, the recess 61 is imaged by the camera 35, and the acquired image data is stored in the image storage unit 55 of the control unit 5. Is remembered. Based on the stored image data, the volume V1 of the lower layer portion 46 and the volume V2 of the upper layer portion 47 of the liquid pool of the resist solution 45 are calculated as described above, and the discharge amount V = V1 + V2 is calculated (FIG. 12).

  Then, a target value of the discharge amount of the resist solution−the discharge amount V = the deviation of the discharge amount is calculated. When the deviation of the discharge amount is out of the preset allowable range, the pressure correction value corresponding to the deviation of the discharge amount is read from the correlation stored in the correlation storage unit 58. Then, the read pressure correction value is added to the set pressure of the supply mechanism 44A stored in the pump pressure storage unit 56 (if the correction value is a negative value, it is subtracted from the set pressure). The set pressure is updated. When the displacement of the discharge amount is within the allowable range, the reading of the pressure correction value and the correction of the set pressure by this correction value are not performed.

  Thereafter, the nozzle holding portion 41 moves in the horizontal direction, and the resist solution discharge nozzle 42B is positioned and stopped at the position where the resist solution discharge nozzle 42A discharges the resist solution. In parallel with the movement of the nozzle holding portion 41, the measuring jig 6 rotates clockwise, and the concave portion 61 adjacent to the concave portion 61 in which the resist solution 45 is stored in this rotational direction is a resist solution discharge nozzle 42B. Stops at a position below. Then, the resist solution 45 is discharged from the resist solution discharge nozzle 42B into the recess 61 (FIG. 13), and in the same manner as when the resist solution 45 is discharged from the resist solution discharge nozzle 42A into the recess 61, the imaging of the recess 61 and the resist solution are performed. The calculation of the discharge amount V of 45 is sequentially performed. When the displacement of the discharge amount calculated from the discharge amount V is out of the allowable range, the set pressure of the pump of the resist solution supply mechanism 44B connected to the resist solution discharge nozzle 42B is corrected. .

  After that, the alignment of the resist solution discharge nozzle 42 by the movement of the nozzle holding portion 41 and the alignment of the concave portion 61 by the rotation of the measuring jig 6 are performed. For example, the resist solution discharge nozzles 42C, 42D, 42E,. The resist solution 45 is discharged from the nozzles to the recesses 61 in the order, that is, in the alphabetical order given to the reference numerals of the resist solution discharge nozzles 42. Then, after the resist solution 45 is discharged from the resist solution discharge nozzles 42 to the recesses 61, the image of the recesses 61 by the camera 35 and the calculation of the discharge amount V of the resist solution 45 are performed. When the deviation of the discharge amount obtained from the discharge amount V is out of the allowable range, the set pressure of the pump is corrected for the supply mechanism 44 connected to the resist solution discharge nozzle 42 that has discharged. . Then, the discharge amount V is calculated for the resist solution 45 discharged from the last resist solution discharge nozzle 42J, and when the deviation of the discharge amount is out of the allowable range, the set pressure of the pump is corrected. The thinner discharge nozzle 42K is positioned on the center of the measuring jig 6 (FIG. 14).

  The thinner 49 is discharged from the thinner discharge nozzle 42K to the center of the measuring jig 6, and the measuring jig 6 rotates. The thinner 49 spreads to the peripheral edge of the measuring jig 6 due to the centrifugal force, and the resist solution 45 in the recess 61 is pushed out from the recess 61 and is washed away to the outside of the wafer W (FIG. 15). When the discharge of the thinner 49 is stopped, the thinner 49 of the measuring jig 6 is shaken off by the rotation of the measuring jig 6, removed from the measuring jig 6, and the measuring jig 6 is dried (FIG. 16). . Thereafter, the rotation of the measuring jig 6 is stopped.

  If a series of steps from when the nozzle holding portion 41 moves onto the measurement jig 6 until the thinner 49 is shaken off and the measurement jig 6 is dried is defined as the first adjustment step, the first adjustment is performed. After the process is completed, a second adjustment process similar to the first adjustment process is performed. That is, the alignment of the resist solution discharge nozzle 42 and the recess 61, the discharge of the resist solution 45 from the resist solution discharge nozzle 42 to the recess 61, the imaging of the recess 61 by the camera 35, and the calculation of the discharge amount V of the resist solution 45 are sequentially performed. Is called.

  The discharge of the resist solution 45 from each of the resist solution discharge nozzles 42 </ b> A to 42 </ b> B in the second adjustment step is also performed by setting the set pressure of the pump to the set pressure stored in the pressure storage unit 56. That is, for the pump for which the set pressure is corrected in the first adjustment step, the resist solution 45 is discharged with the corrected set pressure. In the second adjustment process, if the displacement of the discharge amount is not within the allowable range, the set pressure is corrected. In the second adjustment step, when the thinner is turned off by the rotation of the measurement jig 6, the nozzle holding unit 41 returns to the standby unit 37. When the rotation is stopped, the substrate transport mechanism performs measurement. The jig 6 is unloaded from the resist coating apparatus 1.

  When the measurement and correction of the discharge amount of the resist solution are performed in this manner, the resist coating process is performed on the wafer W. Processing on the wafer W will be described with reference to FIGS. 17 to 19 as appropriate. By the substrate transport mechanism, the wafer W is transported to the resist coating apparatus 1, and the center of the back surface is transferred to and held by the spin chuck 12, similarly to the measurement jig 6. When the nozzle holding unit 41 moves from the standby unit 37 onto the wafer W and the thinner 49 is supplied to the central portion of the wafer W, the thinner 49 is spread to the peripheral portion by the centrifugal force of the rotation of the wafer W. (FIG. 17).

  Then, a resist solution discharge nozzle 42 that is set in advance to perform processing on the wafer W, in this example 42J, moves onto the center of the wafer W, and a resist solution supply mechanism 44 connected to the resist solution discharge nozzle 42J. The pressure of the pump becomes the set pressure stored in the pressure storage unit 56 of the pump, and the resist solution 45 is discharged to the center of the wafer W (FIG. 18). That is, in the first and second adjustment steps described above, the pump that has corrected the set pressure is set to the corrected set pressure, and the resist solution 45 is discharged. Then, when the resist liquid 45 having a target discharge amount is discharged onto the wafer W, the discharge of the resist liquid 45 is stopped. The discharged resist solution 45 spreads around the periphery of the wafer W by centrifugal force, and a resist film having a desired film thickness is formed from the resist solution 45 (FIG. 19). The rotation of the wafer W is stopped, and the wafer W is unloaded from the resist coating apparatus 1 by the substrate transfer mechanism.

  According to the resist coating apparatus 1, the resist solution 45 is discharged from the resist solution discharge nozzles 42 </ b> A to 42 </ b> J into the recess 61 of the measurement jig 6, and the image of the discharged resist solution 45 is captured by the camera 35 to obtain image data. The discharge amount of the resist solution 45 is calculated based on the image data. Therefore, it is not necessary for the worker to receive the resist solution 45 discharged from the resist solution discharge nozzles 42A to 42J in a container such as a measuring cylinder and perform measurement. Therefore, it is possible to prevent the resist solution from being applied to the worker by splashing from the container or from being injured when the worker touches or pushes each part of the apparatus 1. Therefore, the discharge amount can be measured safely. In the resist coating apparatus 1, the set pressure of the pump is automatically changed based on the measured discharge amount so that the discharge amount becomes a target value, and the discharge amount is corrected. Therefore, the trouble of the operator of the apparatus 1 can be reduced.

  Furthermore, in this resist coating apparatus 1, the volume of the resist liquid 45 pool is calculated with the upper layer portion 47 formed by rising due to surface tension as a semi-ellipsoid. Thus, by calculating the volume of the upper layer portion 47 as well, the discharge amount can be measured with higher accuracy. In the measuring jig 6, a plurality of recesses 61 are provided in the circumferential direction. Therefore, after the resist solution 45 is discharged from the one resist solution discharge nozzle 42 to one recess 61, the other recess 61 is quickly moved below the other resist solution discharge nozzle 42 by the rotation of the spin chuck 12. Can do. Accordingly, the discharge amount can be measured quickly.

  FIG. 20 shows a measuring jig 7 as another example of the measuring jig. This measuring jig 7 is provided with a recess 71 instead of the recess 61, and the recess 71 is formed in a quadrangular pyramid shape with its apex facing downward. This square weight is a straight weight. Thus, the measurement jig 7 is configured in the same manner as the measurement jig 6 except for the difference in the shape of the recesses.

  The upper part of FIG. 21 shows a state in which the resist solution 45 is discharged from the resist solution discharge nozzle 42J into the recess 71. After the stop of the discharge of the resist solution 45, the resist solution 45 scattered in the recess 71 flows downward along the side surface of the recess 71 by gravity, like the resist solution 45 discharged to the recess 61, as shown in FIG. As shown in the middle stage, a liquid pool is formed. The lower part of FIG. 21 shows an image of the resist solution 45 imaged by the camera 35 and binarized.

  In this embodiment, the volume V of the resist solution 45 is calculated on the assumption that the liquid level does not rise due to surface tension as described above. That is, the calculation is performed assuming that the liquid reservoir is a concave portion 71 and a quadrangular pyramid whose surfaces are similar to each other. From the binarized image, the control unit 5 obtains the lengths x and y of each side of the bottom surface of the quadrangular pyramid of the liquid pool.

Incidentally, FIG. 22 shows a side surface of the recess 71. In order to calculate the volume V, it is necessary to calculate the height z of the liquid reservoir shown in FIG. As described above, since the liquid reservoir is regarded as a quadrangular pyramid, there is a correspondence between the height z and the lengths of the sides x and y of the bottom surface of the square weight, and x and y As becomes larger, z becomes larger. The correspondence relationship is stored in the control unit 5 in advance, and when x and y are calculated as described above, the control unit 5 is configured to be able to calculate z from this x or y. When these x, y, and z are calculated, the control unit 5 calculates the volume V of the liquid pool, that is, the discharge amount by the following equation 3.
V = 1 / 3xyz Equation 3

  FIG. 23 shows a recess 72 which is a modification of the recess 71. Similar to the recess 71, the recess 72 is formed as a quadrangular pyramid with its apex directed downward. The recess 72 is formed as a regular quadrangular pyramid, and the bottom surface of the quadrangular pyramid forms a square. In the concave portion 72, one of the four side surfaces is configured as a scale forming surface 73, and a large number of scales 74 formed in the horizontal direction are arranged in the vertical direction. These scales 74 are formed at regular intervals, for example, and the uppermost scale 74 is formed at the edge of the recess 72. For example, the control unit 5 stores in advance the length of the interval between the adjacent scales 74.

  In the controller 5, the length B from the vertex of the quadrangular pyramid to the center of one side of the bottom surface is stored in advance for the recess 72. FIG. 24 is a vertical side view of the recess 72 as viewed toward the scale forming surface 73. In the figure, the angle formed by the bottom surface and the side surface of the quadrangular pyramid is indicated as C, and the value of this angle C is also stored in the control unit 5 in advance.

  The upper part of FIG. 25 shows a state in which the resist solution 45 is discharged into the recess 72, and the middle part of FIG. 25 shows a state in which the liquid surface of the resist solution 45 is stable and is imaged by the camera 35. In this example as well, the surface tension of the resist solution 45 is not taken into consideration, and each surface of the liquid pool of the resist solution 45 is regarded as a square pyramid similar to each surface of the recess 72. The scale 74 below the liquid surface of the resist solution 45 is hidden by the color of the resist solution 45 and is not imaged. With respect to the acquired image, the control unit 5 uses the number of the scales 74 exposed on the liquid surface and the interval between the scales 74 stored in advance as described above, as shown in the middle part of FIG. A length D from the liquid level of the resist solution 45 along the side surface to the upper edge of the recess 72 is calculated.

The lower side of FIG. 25 schematically shows a longitudinal side surface of the recess 72 including the liquid reservoir of the resist solution 45. The controller 5 calculates a length E = BD from the top of the liquid reservoir to the center of one side of the bottom surface. Based on the length E and the angle C, F = E · cosC and G = E · sinC are calculated. F is ½ of the length of one side of the bottom surface of the square pyramid of the liquid pool, and G is the height of the square pyramid. Then, the volume V of the liquid pool, that is, the discharge amount of the resist liquid discharge nozzle 42 is calculated from the following equation 4.
V = 1/3 (2F) ² G = 4/3 · E ³ (cosC) ² · sinC Expression 4

  In the upper part of FIG. 26, a modification of the recess 72 is shown. Of the four side surfaces of the concave portion 72, three side surfaces other than the scale forming surface 73 are formed in black, and the outer side of the concave portion 72 is also formed in black on the surface of the measuring jig 7. However, in order to prevent the figure from becoming difficult to see, these parts are shown in a relatively dark gray scale instead of being shown as black in the figure. As for the scale forming surface 73, for example, a black scale 74 is formed on a white surface.

  The middle part of FIG. 26 shows the upper surface of the recess 72 in a state where the resist liquid 45 is discharged and the liquid surface of the resist liquid 45 is stable as described above. When the concave portion 72 is imaged by the camera 35 and binarization is performed, the resist solution 45 becomes black like the three surfaces of the concave portion and the outside of the concave portion 72. Therefore, only the scale formation surface 73 on the liquid surface of the resist solution 45 is white in the image. Thereby, the control unit 5 can distinguish the exposed scale forming surface 73 and the scale 74 of the scale forming surface 73 with high accuracy, so that the length from the liquid level shown in FIG. The length D can be measured more reliably.

  As shown in FIG. 27, a scale 74 may be formed in the conical recess 61. In this example, the scale 74 is formed in a ring shape along the circumference of the recess 61. When measuring the discharge amount of the resist solution by the concave portion 61 of FIG. 27, as in the case of measuring by the concave portion 72, for example, the liquid surface rises due to the surface tension, that is, the upper layer portion 47 is not formed. The volume of the resist solution is calculated in substantially the same manner as in the case of obtaining the volume of the resist solution in the recess 72. Specifically, an image is acquired and the scale 74 determines the length J (see FIG. 28) of the liquid surface of the resist 45 in the recess 61 and the edge of the recess 61 (see FIG. 28). Find the length from the top of the conical pool cone to the bottom edge. From this length, the volume V1 of the lower layer portion 46 is calculated as the discharge amount V of the resist solution 45. In order to calculate the discharge amount V in this way, it is assumed that the controller 5 stores in advance the angle θ in FIG. 2 and the length from the apex of the cone of the recess 61 to the end of the bottom surface.

  Thus, when calculating | requiring the discharge amount V of a resist liquid, if the control part 5 can identify the scale 74, the marks other than the scale 74 may be attached | subjected in the recessed part 61. FIG. In the example shown in FIG. 29, a large number of lines extending radially from the center of the recess 61 to the edge of the recess 61 are provided on the side wall of the recess 61.

  By the way, for example, when the scales 74 are formed in the recesses 61 and the recesses 71 and 72 as described above, the correspondence relationship between each scale 74 and the amount of liquid stored in each recess is stored in the control unit 5 in advance, and this correspondence relationship is stored. The discharge amount may be measured by the above. Specifically, the camera 61 captures an image of the recess 61 from which the resist solution 45 has been discharged. Then, the control unit 5 detects a scale 74 that coincides with or is close to the upper end of the resist solution 45 in the image that is in contact with the side wall of the recess 61, that is, the upper end of the lower layer portion 46. A value corresponding to the detected scale 74 is read from the correspondence relationship, and the value is set as the discharge amount of the resist solution 45. That is, the discharge amount of the resist solution 45 is not limited to being obtained by performing an operation so as to obtain the volume of a cone or a square pyramid as described above.

  Further, as described above, when a deviation is detected between the target value of the discharge amount and the actual discharge amount V, it is not limited to the correction of the discharge amount by changing the set pressure of the pump. . For example, the opening and closing time of a valve (not shown) provided between the pump and the resist solution discharge nozzle 42 is controlled, thereby controlling the time that the resist solution is discharged from the nozzle and correcting the discharge amount. May be.

  Each of the recesses is not limited to being provided in the jig, but may be provided in a component of the resist coating apparatus 1. FIG. 30 shows an example in which a recess 61 is provided on the surface of the spin chuck 12. Also in this case, the adjustment step is performed as in the case of using the measuring jig 6.

  Further, the recess is not limited to being formed in a cone shape, and may be a circular or square recess having a vertical side surface, for example. However, as compared with such a configuration, when a cone is formed like the recesses 61, 71, 72, the formation of corners between the bottom surface and the side surface in the recess is suppressed. Accordingly, when the resist solution 45 is removed by the thinner that is a cleaning solution, the thinner is prevented from staying at the corners, and the thinner can easily flow along the surface in the recess. Therefore, it is possible to prevent the resist solution 45 from remaining in the recess. In particular, it has been confirmed by experiments that when the concave portion is formed in a conical shape like the concave portion 61, the residual resist solution can be suppressed.

  Further, the position where the camera 35 is provided is not limited to the above example, and FIG. 31 shows an example where the camera 35 is provided outside the cup body 21. In this example, the optical axis 36 of the camera 35 is oriented in the horizontal direction, and the measuring jig 6 can be imaged from the side via a light transmitting portion 81 provided on the cup body 21. In the figure, reference numeral 82 denotes a shutter, which shields the translucent portion 81 inside the cup body 21 except during imaging in order to prevent contamination. The measuring jig 6 is made of, for example, a transparent member, and can capture an image and acquire an image of the side surface of the liquid reservoir of the resist solution 45 in the recess 61 as indicated by the tip of the dotted arrow in the figure. . From this image, the control unit 5 calculates the radius r of the bottom surface of the lower layer part 46 and the upper layer part 47, the height h of the lower layer part 46, and the height n of the upper layer part 47. A liquid discharge amount V is calculated. In the figure, reference numeral 75 denotes an imaginary line that divides the lower layer portion 46 and the upper layer portion 47.

  For example, the concave portion of the measuring jig 6 is imaged from the side as described above, with the side surface being vertical and the bottom surface being horizontal. Then, the height h of the lower layer portion 46 and the height n of the upper layer portion 47 may be detected from the image, and the volume V1 of the lower layer portion 46 and the volume V2 of the upper layer portion 47 may be calculated. However, when the concave portion is formed in this manner, the lower layer portion 46 has a columnar shape, and thus the volume of such a column is calculated as V1.

Although an example in which the present invention is applied to the resist coating apparatus 1 has been described, the present invention is not limited to being applied to an apparatus for applying a resist solution. For example, the present invention can be applied to a processing liquid coating apparatus that applies a processing liquid for forming an antireflection film instead of a resist liquid. Further, the present invention is applied to a processing liquid coating apparatus that applies a processing liquid for forming a protective film for protecting the surface of the resist film instead of the resist liquid, for example. In the resist coating apparatus 1, the discharge amount may be measured and corrected for the thinner as well as the resist solution. The present invention can also be applied to an apparatus for applying an adhesive to the wafer W in order to bond a plurality of wafers W together.

  A coating and developing device 9 is shown in FIGS. The coating / developing apparatus 9 includes a resist coating module, a resist coating module corresponding to the resist coating apparatus 1, a processing liquid coating apparatus for forming an antireflection film, and a processing liquid coating apparatus for forming a protective film, and a coating module for forming an antireflection film. A coating module for forming a protective film is provided. 33, 34, and 35 are a plan view, a perspective view, and a schematic longitudinal side view of the coating and developing apparatus 9, respectively. The coating / developing apparatus 9 is configured by connecting a carrier block D1, a processing block D2, and an interface block D3 in a straight line. An exposure device D4 is further connected to the interface block D3. In the following description, the arrangement direction of the blocks D1 to D3 is the front-rear direction. The carrier block D1 has a role of applying a carrier C1 including a plurality of wafers W and carrying the carrier C1 in and out of the developing device 9. The carrier block D1 has a mounting base 91, an opening / closing part 92, and a carrier C1 through the opening / closing part 92. And a transfer mechanism 93 for transporting the wafer W from.

  The processing block D2 is configured by laminating first to sixth unit blocks E1 to E6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, “BCT” is a process for forming a lower antireflection film on the wafer W, “COT” is a process for forming a resist film on the wafer W, and a process for forming a resist pattern on the exposed wafer W is performed. Sometimes expressed as “DEV”. In this example, as shown in FIG. 33, two BCT layers, COT layers, and DEV layers are stacked from the bottom. The wafer W is transferred and processed in parallel in the same unit block.

  Here, as a representative of the unit blocks, the COT layer E3 will be described with reference to FIG. A plurality of shelf units U are arranged in the front-rear direction on the left and right sides of the transfer area 94 from the carrier block D1 to the interface block D3, and the resist coating module COT and the protective film-forming coating module ITC are arranged in the front-rear direction It is arranged. The resist coating module COT is formed in the same manner as the resist coating apparatus 1 except that two cup units 11 are provided for one nozzle unit 31. The coating module ITC for forming a protective film has the same configuration as the resist coating module COT except for the difference in the processing liquid described above. The shelf unit U includes a heating module. In the transfer area 94, a transfer arm F3 which is a transfer mechanism of the wafer W is provided.

  The other unit blocks E1, E2, E5, and E6 are configured in the same manner as the unit blocks E3 and E4, except that the processing liquid supplied to the wafer W is different. The unit blocks E1 and E2 include the antireflection film forming coating module instead of the resist coating module COT, and the unit blocks E5 and E6 include a developing module. In FIG. 34, the transfer arms of the unit blocks E1 to E6 are shown as F1 to F6. These transfer arms F correspond to the substrate transfer mechanism described in the resist coating apparatus 1.

  On the carrier block D1 side in the processing block D2, a tower T1 that extends vertically across the unit blocks E1 to E6 and a transfer arm 95 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T1. And are provided. The tower T1 is composed of a plurality of modules stacked on each other, and the module provided at each height of the unit blocks E1 to E6 is a wafer between the transfer arms F1 to F6 of the unit blocks E1 to E6. W can be handed over. As these modules, actually, a delivery module TRS provided at the height position of each unit block, a temperature control module CPL for adjusting the temperature of the wafer W, a buffer module for temporarily storing a plurality of wafers W, And a hydrophobizing module for hydrophobizing the surface of the wafer W. In order to simplify the description, the hydrophobic treatment module, the temperature control module, and the buffer module are not shown.

  The interface block D3 includes towers T2, T3, and T4 extending vertically across the unit blocks E1 to E6. The interface block D3 is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T2 and the tower T3. An interface arm 96, an interface arm 97 that is a transfer mechanism that can be moved up and down to transfer the wafer W to the tower T2 and the tower T4, and a wafer W between the tower T2 and the exposure apparatus D4. An interface arm 98 is provided.

  The tower T2 includes a delivery module TRS, a buffer module for storing and retaining a plurality of wafers W before exposure processing, a buffer module for storing a plurality of wafers W after exposure processing, and a temperature for adjusting the temperature of the wafers W. Although the adjustment module and the like are stacked on each other, illustration of the buffer module and the temperature adjustment module is omitted here. In the coating / developing apparatus 9, a place where the wafer W is placed is described as a module. The towers T3 and T4 are also provided with modules, but the description thereof is omitted here.

  A transport path of the wafer W in the system including the coating / developing device 9 and the exposure device D4 will be described. The wafer W is transferred from the carrier C1 to the transfer module TRS0 of the tower T1 in the processing block D2 by the transfer mechanism 93. The wafer W is transferred from the delivery module TRS0 to the unit blocks E1 and E2 and transferred. For example, when the wafer W is transferred to the unit block E1, among the transfer modules TRS of the tower T1, the transfer module TRS1 corresponding to the unit block E1 (the transfer module capable of transferring the wafer W by the transfer arm F1). The wafer W is transferred from the TRS0. When the wafer W is transferred to the unit block E2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block E2 among the transfer modules TRS of the tower T1. Delivery of these wafers W is performed by a delivery arm 95.

  The wafers W thus distributed are transported in the order of TRS1 (TRS2) → antireflection film forming coating module → heating module → TRS1 (TRS2), and then the delivery module TRS3 corresponding to the unit block E3 by the delivery arm 95. And the delivery module TRS4 corresponding to the unit block E4.

  Thus, the wafers W distributed to TRS3 and TRS4 are transported in the order of TRS3 (TRS4) → resist coating module COT → heating module → protection film forming coating module ITC → heating module → tower T2 delivery module TRS. . The wafer W transferred to the delivery module TRS is carried into the exposure apparatus D4 through the tower T3 by the interface arms 96 and 98. The exposed wafer W is transferred between the towers T2 and T4 by the interface arms 96 and 97, and transferred to the transfer modules TRS5 and TRS6 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, after being transferred to the heating module → the developing module → the heating module → the transfer module TRS of the tower T1, it is returned to the carrier C1 via the transfer mechanism 93.

  When the wafer W is not transferred and processed as described above, the carrier C1 storing the measurement jig 6 instead of the wafer W is loaded into the carrier block D1. The measuring jig 6 is, for example, the transfer mechanism 93 → the transfer module TRS0 → the transfer arm 95 → the transfer module TRS1 → the transfer arm A1 → the coating module BCT for forming an antireflection film → the transfer arm A1 → the transfer module TRS1 → the transfer arm 95 → Transfer module TRS2 → transfer arm A2 → antireflection film forming coating module BCT → transfer arm A2 → transfer module TRS2.

  After that, the measuring jig 6 transfers the transfer arm 95 → the transfer module TRS3 → the transfer arm A3 → the resist coating module COT → the transfer arm A3 → the protective film forming application module ITC → the transfer arm A3 → the transfer module TRS3 → the transfer arm 95 → the transfer. Module TRS4 → Transfer arm A4 → Resist coating module COT → Transfer arm A4 → Protective film forming coating module ITC → Transfer arm A4 → Transfer module TRS4 → Transfer arm 95 → Transfer module TRS0 → Transfer mechanism 93. , Returned to the carrier C1.

  That is, the measuring jig 6 is transported to the antireflection film forming coating module BCT, the resist coating module COT, and the protective film forming coating module ITC of the unit blocks E1 to E4. In these transfer destination modules, as described in the resist coating apparatus 1, the measurement jig 6 is used to measure the discharge amount of each processing liquid and adjust the discharge amount for each processing liquid supply unit. Then, after the measurement and adjustment of the discharge amount, the transfer and processing of the wafer W in the coating and developing apparatus 9 are resumed.

  Since the measuring jig 6 is configured to have the same outer shape as the wafer W, the unit blocks D1 to E4 are thus transported by the transport arms F1 to F4, and the measurement and adjustment can be performed. Thereby, the labor for the operator to transport the measuring jig 6 to each module can be saved. Therefore, the measurement and adjustment can be performed efficiently. For example, the measuring jig 6 may be provided with a storage unit in the towers T1 to T4, and may be transferred from the storage unit to each module.

W Wafer 1 Resist coating devices 42A to 42J Resist liquid discharge nozzles 44A to 44J Resist liquid supply mechanism 45 Resist liquid 46 Lower layer part 47 Upper layer part 5 Control part 54 Program 6 Measuring jig 61 Recess

JP-A-4-236419

Claims (15)

A substrate holder for holding the substrate;
A processing liquid discharge section for discharging a processing liquid onto the surface of the substrate held by the substrate holding section to perform liquid processing;
An imaging unit for acquiring image data by imaging a recess in which the processing liquid discharged from the processing liquid discharging unit is stored in order to inspect the discharge amount of the processing liquid onto the substrate;
A data processing unit for measuring the amount of the processing liquid stored in the concave portion based on the image data;
A liquid processing apparatus comprising: Based on the amount of processing liquid measured by the data processing unit,
The liquid processing apparatus according to claim 1, further comprising a discharge amount correction mechanism that corrects an amount of the processing liquid discharged to the substrate.   The liquid processing apparatus according to claim 1, wherein the concave portion is formed in a cone shape with a vertex facing downward. The liquid processing apparatus according to claim 3, wherein the cone is a cone. The recess is formed in a circular shape in plan view,
The data processing unit, for the processing liquid stored in the recess,
The amount is measured so as to be the sum of an upper layer portion that forms a circular dome shape and a lower layer portion below the circular dome shape due to the surface tension of the treatment liquid. Liquid processing apparatus as described in one. A cleaning liquid supply section for supplying a cleaning liquid to the concave portion in order to remove the processing liquid from the concave portion;
A cleaning liquid removal mechanism for removing the cleaning liquid from the recess;
The liquid processing apparatus according to any one of claims 1 to 5, further comprising: The concave portion is formed on the surface of a plate-shaped measuring jig passed to the substrate holding portion,
The liquid processing according to claim 6, wherein the cleaning liquid removing mechanism is constituted by a rotating mechanism for rotating the measuring jig held by the substrate holding unit and shaking the cleaning liquid from the recess by centrifugal force. apparatus. In a liquid processing method for performing liquid processing by discharging a processing liquid from a processing liquid discharging unit onto the surface of a substrate held by a substrate holding unit that holds a substrate,
A step of discharging the processing liquid from the processing liquid discharge portion into the recess in order to inspect the discharge amount of the processing liquid onto the substrate;
A step of capturing image data by capturing an image of a recess in which the processing liquid is stored by an imaging unit;
A step of measuring the amount of processing liquid stored in the concave portion based on the image data by a data processing unit;
A liquid treatment method comprising: Based on the amount of processing liquid measured by the data processing unit,
The liquid processing method according to claim 8, further comprising a step of correcting the amount of the processing liquid discharged onto the substrate by the discharge amount correction mechanism. Supplying a cleaning liquid to the recess in order to remove the processing liquid from the recess by the cleaning liquid supply unit;
Removing the cleaning liquid from the recess by a cleaning liquid removing mechanism;
The liquid processing method of Claim 8 or 9 characterized by the above-mentioned. The concave portion is formed on the surface of a plate-shaped measuring jig passed to the substrate holding portion,
Comprising the step of holding the measurement jig on the substrate holder,
The liquid processing method according to claim 10, wherein the step of removing the cleaning liquid includes a step of rotating the measuring jig by a rotating mechanism and shaking the cleaning liquid from the recess by centrifugal force. A substrate holder for holding the substrate;
A processing liquid discharge section for discharging a processing liquid onto the surface of the substrate held by the substrate holding section to perform liquid processing;
An imaging unit for acquiring image data by imaging a recess in which the processing liquid discharged from the processing liquid discharging unit is stored in order to inspect the discharge amount of the processing liquid onto the substrate;
A data processing unit for measuring the amount of the processing liquid stored in the concave portion based on the image data;
A jig for measuring the discharge amount of the processing liquid used in a liquid processing apparatus comprising:
A measuring jig which is formed in a plate shape and has the concave portion on the surface thereof.   The measuring jig according to claim 12, wherein the concave portion is formed in a cone shape with a vertex facing downward.   The measuring jig according to claim 13, wherein the cone is a cone.   The measurement jig according to claim 12, wherein a plurality of the recesses are provided in a circumferential direction.

Images