JP2014179566A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus and a substrate processing method, capable of suppressing damage on a substrate without increasing the flow rate of a protective solution being supplied to the substrate.SOLUTION: A first protective solution nozzle 6 is optimized, in a state where a jet region is located in the center on the upper surface of a substrate W, so that the protective solution ejected from the first protective solution nozzle 6 spreads over the entire area of the jet region. A second protective solution nozzle 7 is optimized, in a state where the jet region is located at the peripheral edge on the upper surface of the substrate W, so that the protective solution ejected from the second protective solution nozzle 7 spreads over the entire area of the jet region. When the jet region is located in the inner peripheral region on the upper surface of the substrate W, the protective solution is ejected only from the first protective solution nozzle 6. When the jet region is located in the outer peripheral region on the upper surface of the substrate W, the protective solution is ejected only from the second protective solution nozzle 7.

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate, ceramic substrate, solar cell substrate and the like.

In a manufacturing process of a semiconductor device, a liquid crystal display device, or the like, a process using a processing liquid is performed on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device.
A single-wafer type substrate processing apparatus that processes substrates one by one, for example, a spin chuck that holds and rotates a substrate horizontally, and a droplet of a processing solution collides with the upper surface of the substrate held by the spin chuck. An ejection nozzle and a protective liquid nozzle that discharges the protective liquid toward the upper surface of the substrate held by the spin chuck are provided (see Patent Document 1). In this substrate processing apparatus, the spray nozzle and the protective liquid nozzle are moved while keeping their positional relationship constant.

  In the substrate processing apparatus described in Patent Document 1, the droplet nozzle discharges the processing liquid toward a region in the upper surface of the substrate (hereinafter referred to as “ejection region”). In parallel with the discharge of the processing liquid from the droplet nozzle, the protective liquid is discharged from the protective liquid nozzle toward the upper surface of the substrate. The protective liquid discharged from the protective liquid nozzle enters the ejection area, and a liquid film of the protective liquid having a sufficient thickness is formed in the ejection area. Therefore, the droplet of the treatment liquid collides with the ejection area in a state where the position of the ejection area is covered with the liquid film of the protective liquid.

JP 2012-216777 A

In the substrate processing apparatus described in Patent Document 1, the relative position and orientation of the protective liquid nozzle with respect to the droplet nozzle are set such that the protective liquid supplied to the upper surface of the substrate enters the injection region against the liquid droplets of the processing liquid. In addition, it is necessary to set so that the entire spray area can be covered with the protective liquid.
However, the way in which the protective liquid spreads on the upper surface of the substrate differs greatly between the central portion of the substrate and the peripheral portion of the substrate. Therefore, when the position and orientation of the protective liquid nozzle are set with reference to the case where the protective liquid is supplied to the center of the upper surface of the substrate, the protective liquid does not spread over the entire jet region at the peripheral edge of the upper surface of the substrate and has a sufficient thickness. There is a possibility that the position of the ejection region where the liquid film of the protective film is not formed occurs. Further, when the position and orientation of the protective liquid nozzle are set with reference to the case where the protective liquid is supplied to the peripheral edge of the upper surface of the substrate, the protective liquid does not spread over the entire jet region in the central portion of the upper surface of the substrate and has a sufficient thickness. There is a possibility that the position of the ejection region where the liquid film of the protective film is not formed occurs.

When the position of the spray area is not covered by the liquid film, or when the liquid film covering the spray area is thin and a treatment liquid droplet is sprayed onto the spray area, the liquid droplet and the substrate collide with each other. A large impact is applied to the formed pattern, which may cause damage such as pattern collapse.
It is conceivable to increase the flow rate of the protective liquid supplied to the substrate in order to ensure that the entire central spray region is covered with the protective liquid at both the center of the upper surface of the substrate and the peripheral edge of the upper surface of the substrate. However, this measure increases the cost required for processing a single substrate.

  An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of suppressing damage to the substrate without increasing the flow rate of the protective liquid supplied to the substrate.

  In order to achieve the above object, the invention according to claim 1, the substrate holding means (2) for holding the substrate (W) horizontally, and the substrate held by the substrate holding means are arranged in a vertical rotation axis ( C1) a rotating means (10) for rotating around, a droplet nozzle (5) for generating a droplet of the processing liquid sprayed on the spray region (T1) in the upper surface of the substrate held by the substrate holding means, In a state where a protective liquid is discharged on the upper surface of the substrate, a liquid film of the protective liquid is formed on the upper surface of the substrate, and the position of the ejection region is covered by the liquid film of the protective liquid, The liquid is moved so that the position of the jet region moves between the protective liquid nozzle (6, 7; 206) that causes the droplet to collide with the jet region, and the center of the upper surface of the substrate and the peripheral portion of the upper surface of the substrate. The positional relationship between the droplet nozzle and the protective liquid nozzle is constant. According to the position of the jet region in the upper surface of the substrate, the protective liquid from the protective liquid nozzle is applied to the upper surface of the substrate according to the position of the jet region in the upper surface of the substrate, and the nozzle moving means (20) that moves the droplet nozzle and the protective liquid nozzle. The liquid landing position (P1, P2; P3, P4) relative to the liquid droplet nozzle, and the liquid droplet when the protective liquid discharged from the protective liquid nozzle enters the liquid landing position. Change control means (8) for changing and controlling at least one of the relative incident angles (θH1, θV1, θH2, θV2; θH3, θV3, θH4, and θV4) with respect to the nozzle, and the change control means includes the injection region. Is positioned at the center of the upper surface of the substrate, the liquid landing position and the incident angle are controlled to the first state, and the position of the spray region is at the upper peripheral edge of the substrate. When it is location is the deposition liquid position and the incidence angle is controlled to a second state different from said first state, the substrate processing apparatus; a (1 201).

In this section, alphanumeric characters in parentheses represent reference signs of corresponding components in the embodiments described later, but the scope of the claims is not limited to the embodiments by these reference numerals. .
According to this configuration, the landing position and the incident angle of the protective liquid ejected from the protective liquid nozzle are changed according to the position of the ejection region in the upper surface of the substrate. More specifically, when the position of the injection region is arranged at the center of the upper surface of the substrate, the liquid landing position and the incident angle are controlled to the first state, and the position of the injection region is arranged at the peripheral portion of the upper surface of the substrate. When being done, the liquid landing position and the incident angle are controlled to the second state.

  According to a second aspect of the present invention, the first state is a state in which the position of the spray region is arranged at the center of the upper surface of the substrate, and the protective liquid discharged from the protective liquid nozzle is in the spray region. The second state is a state in which the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, and the protective liquid discharged from the protective liquid nozzle is the state The state may be set so as to spread over the entire injection region.

  More specifically, the first state is optimized in a state where the position of the injection region is arranged at the center of the upper surface of the substrate, and the second state is that the position of the injection region is the periphery of the upper surface of the substrate. It is preferable to be optimized in a state where it is arranged in the section. In such a case, even if the flow rate of the protective liquid supplied to the substrate from the protective liquid nozzle disposed at the center of the upper surface of the substrate is small, the entire spray area can be covered with the protective liquid film. Moreover, even if the flow rate of the protective liquid supplied to the substrate from the protective liquid nozzle disposed on the peripheral edge of the upper surface of the substrate is small, the entire jet region can be covered with the liquid film of the protective liquid.

As a result, even if the position of the ejection region is arranged at any position on the upper surface of the substrate, the entire region of the ejection region can be covered with the liquid film of the protective liquid by supplying a small flow rate of the protective liquid to the substrate. Thereby, damage to the substrate can be suppressed without increasing the flow rate of the protective liquid supplied to the substrate.
According to a third aspect of the present invention, the protective liquid nozzle includes a first protective liquid nozzle (6) and a second protective liquid nozzle (7), and the first protective liquid nozzle corresponds to the droplet nozzle. The relative position and orientation are such that the protective liquid discharged from the first protective liquid nozzle is spread over the entire injection area in a state where the position of the injection area is arranged at the center of the upper surface of the substrate. The relative position and posture of the second protective liquid nozzle with respect to the droplet nozzle are set such that the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate. The protective liquid discharged from the protective liquid nozzle is set so as to spread over the entire jet region, and the change control means is configured such that when the position of the jet region is arranged at the center of the upper surface of the substrate, Said second protection When the protective liquid is discharged only from the first protective liquid nozzle without discharging the protective liquid from the nozzle, and the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, the first protective liquid nozzle The substrate processing apparatus according to claim 1, further comprising discharge control means (8) that discharges the protective liquid only from the second protective liquid nozzle without discharging the protective liquid from the second protective liquid nozzle.

  According to this configuration, when the position of the ejection region is arranged at the center of the upper surface of the substrate, the protective liquid is discharged only from the first protective liquid nozzle. The position and posture of the first protective liquid nozzle are such that the protective liquid discharged from the first protective liquid nozzle spreads over the entire area of the injection area in a state where the position of the injection area is arranged at the center of the upper surface of the substrate. Is set to Therefore, even if the flow rate of the protective liquid supplied from the first protective liquid nozzle to the substrate is small, the entire jet region can be covered with the liquid film of the protective liquid.

  In addition, when the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, the protective liquid is discharged only from the second protective liquid nozzle. The position and posture of the second protective liquid nozzle are such that the protective liquid discharged from the second protective liquid nozzle spreads over the entire area of the injection area in a state where the position of the injection area is arranged at the peripheral edge of the upper surface of the substrate. Is set to Therefore, even if the flow rate of the protective liquid supplied from the second protective liquid nozzle to the substrate is small, the entire jet region can be covered with the liquid film of the protective liquid.

  The invention according to claim 4 is characterized in that the discharge control means is in a protective liquid discharge state in parallel with the movement of the position of the injection region from the upper surface peripheral portion of the substrate to the center portion of the upper surface of the substrate. The ejection of the protective liquid from the second protective liquid nozzle is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started in synchronization with the stop of the discharge from the second protective liquid nozzle. In parallel with the movement of the position of the region from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the discharge state of the protective liquid is stopped, and 4. The substrate processing apparatus according to claim 3, wherein discharge of the protective liquid from the second protective liquid nozzle is started in synchronization with stoppage of discharge from the first protective liquid nozzle.

  According to this configuration, the protective liquid nozzle that discharges the protective liquid in a state where the position of the ejection region is moved from the peripheral edge of the upper surface of the substrate toward the center of the upper surface of the substrate is the second protective liquid nozzle. To the first protective liquid nozzle. In addition, the protective liquid nozzle that discharges the protective liquid from the center of the upper surface of the substrate toward the peripheral edge of the upper surface of the substrate is moved from the first protective liquid nozzle to the second Switch to protective liquid nozzle. Thereby, when the position of the injection region is arranged in the peripheral region (OR) of the upper surface peripheral portion of the substrate, the protective liquid is supplied to the substrate only from the second protective liquid nozzle, and the central portion of the upper surface of the substrate is When the position of the ejection region is arranged in the peripheral region (IR), the protective liquid is supplied to the substrate only from the first protective liquid nozzle. Therefore, even when the flow rate of the protective liquid supplied to the substrate is small, the entire jet region can be covered with the liquid film of the protective liquid.

  The invention according to claim 5 is characterized in that the discharge control means is in a protective liquid discharge state in parallel with the movement of the position of the injection region from the upper surface peripheral edge of the substrate to the center of the upper surface of the substrate. Discharging the protective liquid from the second protective liquid nozzle, and starting discharging the protective liquid from the first protective liquid nozzle prior to stopping discharging from the second protective liquid nozzle; In parallel with the movement from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped, and the first The substrate processing apparatus according to claim 3, wherein the discharge of the protective liquid from the second protective liquid nozzle is started prior to the stop of the discharge from the first protective liquid nozzle.

  According to this configuration, the protective liquid nozzle that discharges the protective liquid in a state where the position of the ejection region is moved from the peripheral edge of the upper surface of the substrate toward the center of the upper surface of the substrate is the second protective liquid nozzle. To the first protective liquid nozzle. In addition, the protective liquid nozzle that discharges the protective liquid from the center of the upper surface of the substrate toward the peripheral edge of the upper surface of the substrate is moved from the first protective liquid nozzle to the second Switch to protective liquid nozzle. Thereby, when the position of the injection region is arranged in the peripheral region (OR) of the upper surface peripheral portion of the substrate, the protective liquid is supplied to the substrate only from the second protective liquid nozzle, and the central portion of the upper surface of the substrate is When the position of the ejection region is arranged in the peripheral region (IR), the protective liquid is supplied to the substrate only from the first protective liquid nozzle. Therefore, even when the flow rate of the protective liquid supplied to the substrate is small, the entire jet region can be covered with the liquid film of the protective liquid.

  However, if the discharge stop of the second protective liquid nozzle and the discharge start of the first protective liquid nozzle are performed simultaneously, the timing of the discharge stop of the second protective liquid nozzle is temporarily When the timing is earlier than the discharge start timing, there is a possibility that a period in which the protective liquid is not discharged from both the first and second protective liquid nozzles may occur. During such a period, the upper surface of the substrate is not protected by the protective liquid, and as a result, the substrate may be damaged.

A similar problem may occur when the discharge of the first protective liquid nozzle is stopped and the discharge of the second protective liquid nozzle is simultaneously started.
On the other hand, in the present invention, discharge of the protective liquid from the first protective liquid nozzle is started prior to stopping discharge from the second protective liquid nozzle, and prior to stopping discharge from the first protective liquid nozzle. Then, discharge of the protective liquid from the second protective liquid nozzle is started. In other words, the discharge period of the protective liquid from the first protective liquid nozzle partially overlaps the discharge period of the protective liquid from the second protective liquid nozzle. Accordingly, when the protective liquid nozzle that discharges the protective liquid is switched between the first protective liquid nozzle and the second protective liquid nozzle, the protective liquid is simultaneously discharged from the first and second protective liquid nozzles. A period can be provided, and when the protective liquid nozzle that discharges the protective liquid is switched, it is possible to reliably prevent a state in which the protective liquid is not discharged from both the first and second protective liquid nozzles. .

  As described in claim 6, the first protective liquid supply pipe (25) for supplying a protective liquid to the first protective liquid nozzle, and the first protective liquid supply pipe are interposed, A first protection liquid valve (26) for switching between supply / stop of supply of the protection liquid to the first protection liquid nozzle and a second protection for supplying the protection liquid to the second protection liquid nozzle A second protective liquid valve (29) interposed between the liquid supply pipe (28) and the second protective liquid supply pipe for switching the supply / stop of supply of the protective liquid to the second protective liquid nozzle The second control liquid valve is in an open state in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. And the first protective liquid valve is opened before the second protective liquid valve is closed. In parallel with the movement of the position of the spray region from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate, the first protective liquid valve in the open state is closed, and the first protective liquid valve Prior to closing, the second protective liquid valve may be opened.

  According to a seventh aspect of the present invention, the protective liquid nozzle is a single protective liquid nozzle (206), and the change control means is configured such that when the position of the spray region is arranged at the center of the upper surface of the substrate. The protective liquid ejected from the protective liquid nozzle is positioned relative to the droplet nozzle with respect to the position and attitude of the protective liquid nozzle in a state where the position of the ejection region is arranged at the center of the upper surface of the substrate. The first position and the posture are controlled so as to reach the entire area of the ejection region, and when the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, the protective liquid nozzle is relatively relative to the droplet nozzle. In such a state, the protective liquid discharged from the protective liquid nozzle spreads over the entire area of the injection area in a state where the position of the injection area is arranged on the peripheral edge of the upper surface of the substrate. Further comprising a position and the position and orientation control means for controlling the attitude (8) is a substrate processing apparatus according to claim 1 or 2.

  According to this configuration, when the position of the ejection region is arranged at the center of the upper surface of the substrate, the relative position and posture of the protective liquid nozzle with respect to the droplet nozzle are controlled to the first position and posture. The first position and orientation is such a position and orientation that the protective liquid discharged from the protective liquid nozzle is spread over the entire ejection area in a state where the position of the ejection area is arranged at the center of the upper surface of the substrate. Therefore, even if the flow rate of the protective liquid supplied from the protective liquid nozzle in the first position and posture to the substrate is small, the entire jet region can be covered with the protective liquid film.

  Further, when the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, the relative position and posture of the protective liquid nozzle with respect to the droplet nozzle are controlled to the second position and posture. The second position and posture are positions and postures such that the protective liquid discharged from the protective liquid nozzles spreads over the entire area of the injection region in a state where the position of the injection region is arranged on the peripheral edge of the upper surface of the substrate. Therefore, even when the flow rate of the protective liquid supplied from the protective liquid nozzle in the second position and posture to the substrate is small, the entire jet region can be covered with the protective liquid film.

  The invention according to claim 8 for achieving the above object includes a substrate holding step of holding the substrate (W) horizontally, a rotation step of rotating the held substrate around a vertical rotation axis, A droplet supply step of spraying a droplet of a processing liquid from a droplet nozzle (5) onto a spray region (T1) in the upper surface of the held substrate; and a protective liquid nozzle (6, 7; 206) The protective liquid is discharged on the upper surface, a liquid film of the protective liquid is formed on the upper surface of the held substrate, and the liquid of the treatment liquid is covered with the liquid film of the protective liquid. A step of causing a droplet to collide with the ejection region, and a position of the ejection region between the central portion of the upper surface of the substrate and a peripheral portion of the upper surface of the substrate. While maintaining the positional relationship constant, the droplet nozzle and the In parallel with the nozzle moving step of moving the protective liquid nozzle and the nozzle moving step, the protective liquid from the protective liquid nozzle is deposited on the upper surface of the substrate in accordance with the position of the ejection region in the upper surface of the substrate. The liquid landing position relative to the liquid droplet nozzle (P1, P2; P3, P4) and the liquid droplet nozzle when the protective liquid discharged from the protective liquid nozzle enters the liquid landing position. A change step of changing at least one of relative incident angles (θH1, θV1, θH2, θV2; θH3, θV3, θH4, θV4), and in the change step, the position of the injection region is the center of the upper surface of the substrate When the liquid deposition position and the incident angle are disposed at the upper peripheral edge of the substrate, the liquid deposition position and the incident angle are set to the first state. Position and the incident angle, and a second state different from said first state is a substrate processing method.

According to the method of this invention, there exists an effect equivalent to the effect demonstrated in relation to Claim 1.
According to a ninth aspect of the present invention, in the first state, the position of the spray region is located at the center of the upper surface of the substrate, and the protective liquid discharged from the protective liquid nozzle is in the spray region. The second state is a state in which the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, and the protective liquid discharged from the protective liquid nozzle is the state The substrate processing method according to claim 8, wherein the substrate processing method is set so as to spread over the entire spray region.

According to the method of the present invention, the same function and effect as those described in relation to claim 2 are obtained.
According to a tenth aspect of the present invention, the protective liquid nozzle includes a first protective liquid nozzle (6) and a second protective liquid nozzle (7), and the first protective liquid nozzle corresponds to the droplet nozzle. The relative position and orientation are such that the protective liquid discharged from the first protective liquid nozzle is spread over the entire injection area in a state where the position of the injection area is arranged at the center of the upper surface of the substrate. The relative position and posture of the second protective liquid nozzle with respect to the droplet nozzle are set such that the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate. The protective liquid discharged from the protective liquid nozzle is set so as to spread over the entire jet region, and the changing step is performed when the position of the jet region is arranged at the center of the upper surface of the substrate. Second protective liquid When the protective liquid is discharged only from the first protective liquid nozzle without discharging the protective liquid from the nozzle, and the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate, the first protective liquid nozzle The substrate processing method according to claim 8, further comprising a discharge switching step of discharging the protective liquid only from the second protective liquid nozzle without discharging the protective liquid from the second protective liquid nozzle.

According to the method of the present invention, the same function and effect as those described with reference to claim 3 are obtained.
According to an eleventh aspect of the present invention, the discharge switching step is in a discharge state of the protective liquid in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. The ejection of the protective liquid from the second protective liquid nozzle is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started in synchronization with the stop of the discharge from the second protective liquid nozzle. In parallel with the movement of the position of the region from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the discharge state of the protective liquid is stopped, and 11. The substrate processing method according to claim 10, wherein the discharge of the protective liquid from the second protective liquid nozzle is started in synchronization with the stop of the discharge from the first protective liquid nozzle.

According to the method of the present invention, the same function and effect as those described in connection with claim 4 are achieved.
According to a twelfth aspect of the present invention, the discharge switching step is in a protective liquid discharge state in parallel with the movement of the position of the injection region from the upper surface peripheral portion of the substrate to the center portion of the upper surface of the substrate. Discharging the protective liquid from the second protective liquid nozzle, and starting discharging the protective liquid from the first protective liquid nozzle prior to stopping discharging from the second protective liquid nozzle; In parallel with the movement from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped, and the first The substrate processing method according to claim 10, wherein discharge of the protective liquid from the second protective liquid nozzle is started prior to stopping discharge from the first protective liquid nozzle.

According to the method of the present invention, the same function and effect as those described in connection with claim 5 are obtained.
According to a thirteenth aspect of the present invention, the protective liquid nozzle is a single protective liquid nozzle (206), and the changing step is performed when the position of the ejection region is arranged at the center of the upper surface of the substrate. The position and posture of the protective liquid nozzle with respect to the droplet nozzle are determined such that the protective liquid discharged from the protective liquid nozzle is located in the central area of the upper surface of the substrate. When the position of the spray region is arranged on the upper surface peripheral edge of the substrate, the position and posture of the protective liquid nozzle with respect to the droplet nozzle are changed to the first position and posture so as to spread over the entire area. A second position and posture in which the protective liquid discharged from the protective liquid nozzle spreads over the entire area of the injection area in a state where the position of the injection area is arranged at the peripheral edge of the upper surface of the substrate. Further comprising a position and orientation changing step of changing a substrate processing method according to claim 8 or 9.

  According to the method of the present invention, the same function and effect as those described in connection with claim 7 are achieved.

It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 1st Embodiment of this invention. It is a top view of the droplet nozzle shown in FIG. 1, and the structure relevant to this. It is a typical side view of the droplet nozzle shown in FIG. 1, and the 1st and 2nd protective liquid nozzle. FIG. 2 is a schematic plan view of a droplet nozzle and first and second protective liquid nozzles shown in FIG. 1. It is a typical top view which shows the positional relationship of the droplet nozzle shown in FIG. 1, and a 1st protective liquid nozzle. It is a typical top view which shows the positional relationship of the droplet nozzle shown in FIG. 1, and a 2nd protective liquid nozzle. It is a figure for demonstrating the 1st example of a process of the board | substrate performed with the substrate processing apparatus shown in FIG. It is a figure for demonstrating the washing | cleaning process and 2nd cover process which are shown to FIG. 7B (the 1). It is a figure for demonstrating the washing | cleaning process and 2nd cover process which are shown to FIG. 7B (the 2). It is a timing chart which shows the opening / closing operation | movement of the 1st and 2nd protective liquid valve in the case of moving an injection area | region from the upper surface peripheral part of a board | substrate toward an upper surface center part. It is a timing chart which shows the opening / closing operation | movement of the 1st and 2nd protective liquid valve in the case of moving an injection area | region from the upper surface center part of a board | substrate toward an upper surface peripheral part. 6 is a graph showing the relationship between the flow rate of protective liquid supplied to a substrate and the number of damages of the substrate in Example 1 and Comparative Example 1. FIG. 10 is a diagram for describing a second processing example of a substrate performed by the substrate processing apparatus illustrated in FIG. 1 (No. 1). FIG. 9 is a diagram for describing a second processing example of a substrate performed by the substrate processing apparatus illustrated in FIG. 1 (part 2); FIG. 9 is a diagram for describing a second processing example of a substrate performed by the substrate processing apparatus illustrated in FIG. 1 (No. 3). It is a timing chart which shows the opening / closing operation | movement of the 1st and 2nd protective liquid valve in the case of moving an injection area | region from the upper surface peripheral part of a board | substrate toward an upper surface center part. It is a timing chart which shows the opening / closing operation | movement of the 1st and 2nd protective liquid valve in the case of moving an injection area | region from the upper surface center part of a board | substrate toward an upper surface peripheral part. It is a figure which shows typically the structure of the substrate processing apparatus which concerns on 2nd Embodiment of this invention. FIG. 19 is a schematic side view showing a positional relationship between the droplet nozzle and the third protective liquid nozzle shown in FIG. 18 when the position of the ejection region is arranged at the center of the upper surface of the substrate. FIG. 19 is a schematic plan view showing a positional relationship between a droplet nozzle and a third protective liquid nozzle shown in FIG. 18 when the position of the ejection region is arranged at the center of the upper surface of the substrate. FIG. 19 is a schematic side view showing a positional relationship between the droplet nozzle and the third protective liquid nozzle shown in FIG. 18 when the position of the ejection region is arranged on the peripheral edge of the upper surface of the substrate. FIG. 19 is a schematic plan view showing a positional relationship between a droplet nozzle and a third protective liquid nozzle shown in FIG. 18 in a case where the position of the ejection region is arranged at the peripheral edge of the upper surface of the substrate. It is a figure for demonstrating the 3rd example of a process of the board | substrate performed by the substrate processing apparatus shown in FIG. 18 (the 1). It is a figure for demonstrating the 3rd example of a process of the board | substrate performed with the substrate processing apparatus shown in FIG. 18 (the 2).

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a diagram schematically showing the configuration of a substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 2 is a plan view of the droplet nozzle 5 and the configuration related thereto.
The substrate processing apparatus 1 is a single-wafer type substrate processing apparatus that processes a disk-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a spin chuck 2 (substrate holding means, rotating means) that horizontally holds and rotates a substrate W, a cylindrical cup 3 that surrounds the spin chuck 2, and a rinse that supplies a rinsing liquid to the substrate W. A liquid nozzle 4, a droplet nozzle 5 that causes a droplet of the processing liquid to collide with the substrate W, a first protective liquid nozzle 6 that supplies the protective liquid to the substrate W, and a second that supplies the protective liquid to the substrate W. A protective liquid nozzle 7 and a control device 8 for controlling the operation of the apparatus provided in the substrate processing apparatus 1 such as the spin chuck 2 and the opening / closing of a valve are provided.

  The spin chuck 2 holds the substrate W horizontally and can rotate about a vertical rotation axis L1 passing through the rotation center C1 of the substrate W, and a spin that rotates the spin base 9 about the rotation axis L1. A motor 10. The spin chuck 2 may be a holding chuck that horizontally holds the substrate W while holding the substrate W in a horizontal direction, or by adsorbing the back surface (lower surface) of the substrate W that is a non-device forming surface. A vacuum chuck that holds the substrate W horizontally may be used. In the substrate processing apparatus 1, the spin chuck 2 is a clamping chuck.

  The rinse liquid nozzle 4 is connected to a rinse liquid supply pipe 12 in which a rinse liquid valve 11 is interposed. When the rinse liquid valve 11 is opened, the rinse liquid is discharged from the rinse liquid nozzle 4 toward the center of the upper surface of the substrate W. On the other hand, when the rinse liquid valve 11 is closed, the discharge of the rinse liquid from the rinse liquid nozzle 4 is stopped. As the rinsing liquid supplied to the rinsing liquid nozzle 4, pure water (deionized water), carbonated water, electrolytic ionic water, hydrogen water, ozone water, hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm), etc. It can be illustrated.

The droplet nozzle 5 is an inkjet nozzle that ejects a large number of droplets by an inkjet method. The droplet nozzle 5 is connected to a processing liquid supply mechanism 14 via a processing liquid supply pipe 13. Further, the droplet nozzle 5 is connected to a treatment liquid discharge pipe 15 in which a discharge valve 16 is interposed. The processing liquid supply mechanism 14 includes, for example, a pump. The processing liquid supply mechanism 14 always supplies the processing liquid to the droplet nozzle 5 at a predetermined pressure (for example, 10 MPa or less). Examples of the processing liquid supplied to the droplet nozzle 5 include chemical liquids such as SC-1 (mixed liquid containing NH ₄ OH and H ₂ O ₂ ), pure water, and carbonated water. The control device 8 can change the pressure of the processing liquid supplied to the droplet nozzle 5 to an arbitrary pressure by controlling the processing liquid supply mechanism 14.

  As shown in FIG. 1, the droplet nozzle 5 includes a piezoelectric element 17 disposed inside the droplet nozzle 5. The piezoelectric element 17 is connected to a voltage application mechanism 19 via a wiring 18. The voltage application mechanism 19 includes, for example, an inverter. The voltage application mechanism 19 applies an alternating voltage to the piezoelectric element 17. When an AC voltage is applied to the piezoelectric element 17, the piezoelectric element 17 vibrates at a frequency corresponding to the frequency of the applied AC voltage. The control device 8 can change the frequency of the AC voltage applied to the piezoelectric element 17 to an arbitrary frequency (for example, several hundred KHz to several MHz) by controlling the voltage application mechanism 19. Therefore, the frequency of vibration of the piezoelectric element 17 is controlled by the control device 8.

  The substrate processing apparatus 1 further includes a nozzle moving mechanism 20 (nozzle moving means). The nozzle moving mechanism 20 includes a nozzle arm 21 that holds the droplet nozzle 5 at the tip, a rotating mechanism 22 connected to the nozzle arm 21, and an elevating mechanism 23 connected to the rotating mechanism 22. The rotation mechanism 22 includes, for example, a motor. The elevating mechanism 23 includes, for example, a ball screw mechanism and a motor that drives the ball screw mechanism. The rotation mechanism 22 rotates the nozzle arm 21 around a vertical rotation axis L <b> 2 provided around the spin chuck 2. The droplet nozzle 5 rotates around the rotation axis L <b> 2 together with the nozzle arm 21. Thereby, the droplet nozzle 5 moves in the horizontal direction. On the other hand, the elevating mechanism 23 moves the rotating mechanism 22 up and down in the vertical direction. The droplet nozzle 5 and the nozzle arm 21 move up and down together with the rotation mechanism 22 in the vertical direction. Thereby, the droplet nozzle 5 moves in the vertical direction.

  The rotation mechanism 22 moves the droplet nozzle 5 horizontally in a horizontal plane including the upper side of the spin chuck 2. As shown in FIG. 2, the rotation mechanism 22 moves the droplet nozzle 5 horizontally along an arcuate locus X1 extending along the upper surface of the substrate W held by the spin chuck 2. The locus X1 connects two positions that do not overlap the upper surface of the substrate W when viewed from the vertical direction (vertical direction) perpendicular to the upper surface of the substrate W held by the spin chuck 2, and the substrate when viewed from the vertical direction. It is a curve passing through the center of rotation C1 of the upper surface of W. If the elevating mechanism 23 lowers the droplet nozzle 5 with the droplet nozzle 5 positioned above the substrate W held by the spin chuck 2, the droplet nozzle 5 comes close to the upper surface of the substrate W. When the droplets of the processing liquid collide with the substrate W, the control device 8 controls the rotation mechanism 22 in a state where the droplet nozzle 5 is close to the upper surface of the substrate W, thereby along the locus X1. The droplet nozzle 5 is moved horizontally.

  As shown in FIG. 1, the first protective liquid nozzle 6 and the second protective liquid nozzle 7 are held by a nozzle holder 24 attached to the nozzle arm 21. When at least one of the rotation mechanism 22 and the lifting mechanism 23 moves the nozzle arm 21, the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7 are connected to the droplet nozzle 5 and the first and second droplets. The protective liquid nozzles 6 and 7 move in a state where the positional relationship is kept constant. Therefore, when the rotation mechanism 22 rotates the nozzle arm 21, the first and second protective liquid nozzles 6 and 7 move horizontally along the locus X 1 together with the droplet nozzle 5.

  The first protective liquid nozzle 6 is connected to the first protective liquid supply pipe 25. The second protective liquid nozzle 7 is connected to the second protective liquid supply pipe 28. A first protective liquid valve 26 is interposed in the first protective liquid supply pipe 25. A second protective liquid valve 29 is interposed in the second protective liquid supply pipe 28. The first and second protective liquid supply pipes 25 and 28 are branched and connected to a protective liquid supply collecting pipe 31 connected to a protective liquid supply source. A flow rate adjusting valve 30 is interposed in the protective liquid supply collecting pipe 31.

When the first protective liquid valve 26 is opened while the second protective liquid valve 29 is closed, the protective liquid is discharged only from the first protective liquid nozzle 6 toward the upper surface of the substrate W.
When the second protective liquid valve 29 is opened while the first protective liquid valve 26 is closed, the protective liquid is discharged only from the second protective liquid nozzle 7 toward the upper surface of the substrate W.
When the first and second protective liquid valves 26 and 29 are opened, the protective liquid is discharged from both the first and second protective liquid nozzles 6 and 7 toward the upper surface of the substrate W. At this time, the discharge flow rates of the protective liquid from the first and second protective liquid nozzles 6 and 7 are equal to each other, and when the protective liquid is discharged only from the first protective liquid nozzle 6, Compared to the case where the protective liquid is discharged only from the liquid nozzle 7, the discharge flow rate is half.

Further, the discharge flow rate of the protective liquid from the first protective liquid nozzle 6 and the discharge flow rate of the protective liquid from the second protective liquid nozzle 7 are adjusted by the control device 8 adjusting the opening degree of the flow rate adjustment valve 30. It can be changed.
Examples of the protective liquid supplied to the first and second protective liquid nozzles 6 and 7 include a chemical liquid such as SC-1 and a rinse liquid.

  FIG. 3 is a schematic side view of the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7. FIG. 4 is a schematic plan view of the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7. FIG. 5 is a schematic plan view showing the positional relationship between the droplet nozzle 5 and the first protective liquid nozzle 6. FIG. 6 is a schematic plan view showing the positional relationship between the droplet nozzle 5 and the second protective liquid nozzle 7. 4, only the upper surface 5b of the droplet nozzle 5 is shown, and in FIG. 5 and FIG. 6, only the lower surface 5a (opposing surface) is shown. Hereinafter, the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7 will be described. First, the droplet nozzle 5 will be described.

  As shown in FIG. 3, the droplet nozzle 5 includes a main body 36 that ejects liquid droplets of the processing liquid, a cover 37 that covers the main body 36, the piezoelectric element 17 that is covered by the cover 37, the main body 36, and the cover 37. And a seal 38 interposed therebetween. The main body 36 and the cover 37 are both made of a material having chemical resistance. The main body 36 is made of, for example, quartz. The cover 37 is made of, for example, a fluorine resin. The seal 38 is made of an elastic material such as EPDM (ethylene-propylene-diene rubber). The main body 36 has pressure resistance. A part of the main body 36 and the piezoelectric element 17 are accommodated in the cover 37. The end of the wiring 18 is connected to the piezoelectric element 17 inside the cover 37 by, for example, solder. The inside of the cover 37 is sealed with a seal 38.

  As shown in FIG. 3, the main body 36 connects the supply port 39 to which the processing liquid is supplied, the discharge port 40 for discharging the processing liquid supplied to the supply port 39, and the supply port 39 and the discharge port 40. A processing liquid flow passage 41 and a plurality of injection ports 42 connected to the processing liquid flow passage 41 are included. The processing liquid flow passage 41 is provided inside the main body 36. The supply port 39, the discharge port 40, and the injection port 42 are opened on the surface of the main body 36. The supply port 39 and the discharge port 40 are located above the injection port 42. The lower surface 5a of the main body 36 is, for example, a horizontal flat surface, and the injection port 42 opens at the lower surface 5a of the main body 36. The injection port 42 is a fine hole having a diameter of several μm to several tens of μm, for example. The processing liquid supply pipe 13 and the processing liquid discharge pipe 15 are connected to a supply port 39 and a discharge port 40, respectively.

  As shown in FIGS. 5 and 6, the plurality of injection ports 42 constitute a plurality of rows L (for example, four in FIGS. 5 and 6). Each row L is constituted by a large number (for example, 10 or more) of the injection ports 42 arranged at equal intervals. Each row L extends linearly along the horizontal longitudinal direction D5. Each row L is not limited to a straight line, but may be a curved line. The four rows L are parallel to each other. Two of the four rows L are adjacent to each other in a horizontal direction orthogonal to the longitudinal direction D5. Similarly, the remaining two rows L are adjacent to each other in the horizontal direction orthogonal to the longitudinal direction D5. Two adjacent rows L form a pair. In the two rows L of the pair, a plurality of injection ports 42 (injection ports 42a in FIGS. 5 and 6) constituting one row L and a plurality of injection ports 42 (FIG. 5 and FIG. 5) constituting the other row L. 6 in the longitudinal direction D5. When viewed from the vertical direction, the droplet nozzle 5 is held by the nozzle arm 21 so that, for example, four rows L intersect the locus X1 (see FIG. 2).

  The processing liquid supply mechanism 14 (see FIG. 1) constantly supplies the processing liquid to the droplet nozzle 5 at a high pressure. The processing liquid supplied from the processing liquid supply mechanism 14 to the supply port 39 via the processing liquid supply pipe 13 is supplied to the processing liquid flow passage 41. In a state where the discharge valve 16 is closed, the pressure (fluid pressure) of the processing liquid in the processing liquid flow passage 41 is high. Therefore, in the state where the discharge valve 16 is closed, the processing liquid is ejected from each ejection port 42 by the fluid pressure. Further, when an alternating voltage is applied to the piezoelectric element 17 with the discharge valve 16 being closed, vibration of the piezoelectric element 17 is imparted to the processing liquid flowing through the processing liquid flow passage 41 and is ejected from each ejection port 42. The treated liquid is divided by this vibration. Therefore, when an alternating voltage is applied to the piezoelectric element 17 in a state where the discharge valve 16 is closed, a droplet of the processing liquid is ejected from each ejection port 42. Thereby, a large number of droplets of the treatment liquid having a uniform particle size are simultaneously ejected at a uniform speed.

  On the other hand, when the discharge valve 16 is open, the processing liquid supplied to the processing liquid flow passage 41 is discharged from the discharge port 40 to the processing liquid discharge pipe 15. That is, in the state where the discharge valve 16 is opened, the liquid pressure in the treatment liquid flow passage 41 is not sufficiently increased, so that the treatment liquid supplied to the treatment liquid flow passage 41 is a fine hole. Instead of being ejected from 42, it is discharged from the discharge port 40 to the processing liquid discharge pipe 15. Therefore, the discharge of the processing liquid from the injection port 42 is controlled by opening and closing the discharge valve 16. The control device 8 opens the discharge valve 16 while the droplet nozzle 5 is not used for processing the substrate W (while the droplet nozzle 5 is on standby). Therefore, even when the droplet nozzle 5 is on standby, the state where the processing liquid is circulating inside the droplet nozzle 5 is maintained.

  When the processing liquid droplets collide with the upper surface of the substrate W, the control device 8 moves the droplet nozzle 5 by the nozzle moving mechanism 20 (see FIG. 1), thereby causing the lower surface 5a (main body) of the droplet nozzle 5 to move. The lower surface 5a) of 36 is brought close to the upper surface of the substrate W. Then, the control device 8 closes the discharge valve 16 to increase the pressure of the processing liquid flow passage 41 and drives the piezoelectric element 17 while the lower surface 5a of the droplet nozzle 5 is opposed to the upper surface of the substrate W. By doing so, vibration is applied to the processing liquid in the processing liquid flow passage 41. Thereby, a large number of droplets of the treatment liquid having a uniform particle size are simultaneously ejected at a uniform speed. Then, as shown in FIGS. 3, 5, and 6, a large number of droplets ejected from the droplet nozzle 5 are sprayed onto the two ejection regions T <b> 1 in the upper surface of the substrate W. That is, one ejection region T1 is a region immediately below one pair of the two rows L, and the droplets of the processing liquid ejected from the ejection ports 42 constituting the two rows L are in one ejection region. Sprayed to T1. Similarly, the other ejection region T1 is a region immediately below the other pair of two rows L, and the droplets of the processing liquid ejected from the ejection ports 42 constituting the two rows L are ejected from the other ejection region. Sprayed onto the region T1. As shown in FIGS. 5 and 6, each injection region T1 has a rectangular shape in plan view extending in the longitudinal direction D5, and the two injection regions T1 are parallel to each other.

Next, the first protective liquid nozzle 6 will be described with reference to FIGS.
The first protective liquid nozzle 6 has a first discharge port 43 for discharging the protective liquid. The first discharge port 43 is disposed below the upper end of the droplet nozzle 5. The first discharge port 43 is circular, for example. The first discharge port 43 is not limited to a circle but may be an ellipse or a slit.

  The first protective liquid nozzle 6 discharges the protective liquid toward the first liquid deposition position P1 on the substrate W. The first liquid deposition position P1 is a position upstream of the injection region T1 with respect to the rotation direction Dr of the substrate W. A distance Dc (see FIG. 5) from the first liquid landing position P1 to the center position M of the injection region T1 is, for example, a predetermined distance of 15 to 40 mm. The first discharge port 43 discharges the protective liquid in the first discharge direction D1 toward the first liquid landing position P1. In other words, the protective liquid from the first discharge port 43 enters the first discharge direction D1 with respect to the first liquid deposition position P1 on the substrate W. The first discharge direction D1 is a direction from the first discharge port 43 toward the first liquid deposition position P1, and is a direction from the first discharge port 43 toward the droplet nozzle 5 in plan view. The first ejection direction D1 is inclined with respect to the longitudinal direction D5. An angle (incident angle) θH1 (see FIG. 5) formed by the longitudinal direction D5 and the first ejection direction D1 in plan view is set to a predetermined angle within a range of 25 to 35 degrees, for example.

  As shown in FIG. 3, the first discharge direction D1 is inclined toward the injection region T1 with respect to the vertical direction. In other words, the first liquid landing position P1 is disposed on the ejection region T1 side with respect to the first ejection port 43 in the horizontal direction, and the first ejection direction D1 is inclined with respect to the upper surface of the substrate W. . An angle (incident angle) θV1 (see FIG. 3) formed by the upper surface of the substrate W and the first ejection direction D1 is set to a predetermined angle within a range of 10 to 40 degrees, for example.

The second protective liquid nozzle 7 discharges the protective liquid toward the second liquid landing position P2 on the substrate W. The second liquid landing position P2 is a position upstream of the injection region T1 with respect to the rotation direction Dr of the substrate W. The distance De (see FIG. 6) from the second liquid landing position P2 to the central position M is a predetermined distance of 15 to 40 mm, for example.
The second discharge port 44 discharges the protective liquid in the second discharge direction D1 toward the second liquid landing position P2. In other words, the protective liquid from the second discharge port 44 enters the second discharge direction D2 with respect to the second liquid landing position P2 on the substrate W. The second ejection direction D2 is a direction from the second ejection port 44 toward the second liquid deposition position P2, and is a direction from the second ejection port 44 toward the droplet nozzle 5 in plan view. The second ejection direction D2 is inclined with respect to the longitudinal direction D5. An angle (incident angle) θH2 (see FIG. 6) formed by the longitudinal direction D5 and the second ejection direction D2 in plan view is set to a predetermined angle within a range of 25 to 35 degrees, for example.

  As shown in FIG. 3, the second ejection direction D2 is inclined toward the injection region T1 with respect to the vertical direction. In other words, the second liquid deposition position P2 is arranged on the ejection region T1 side with respect to the second ejection port 44 in the horizontal direction, and the second ejection direction D2 is inclined with respect to the upper surface of the substrate W. . An angle (incident angle) θV2 (see FIG. 3) formed by the upper surface of the substrate W and the second ejection direction D2 is set to a predetermined angle within a range of 10 to 40 degrees, for example.

  First and second protective liquid nozzles 6 and 7 are attached to the nozzle holder 27 (see FIG. 1). The position and posture of the first protective liquid nozzle 6 are optimized in a state where the position of the injection region T1 is arranged at the center of the upper surface of the substrate W, which is a portion including the rotation center C1 of the substrate W. That is, in the first liquid landing position P1 (see FIG. 3), the angle θV1 (see FIG. 3), and the angle θH1 (see FIG. 5), the position of the injection region T1 is arranged at the center of the upper surface of the substrate W. Thus, the position and posture are set such that the protective liquid discharged from the first protective liquid nozzle 6 is most efficiently spread over the entire injection region T1. In other words, the position and posture of the first protective liquid nozzle 6 attached to the nozzle holder 27 are not so suitable for supplying the protective liquid to the ejection region T1 disposed on the upper surface of the substrate W except for the central portion of the upper surface. Not.

  Further, the position and posture of the second protective liquid nozzle 7 are optimized in a state where the position of the ejection region T1 is arranged at the center of the upper surface of the substrate W. That is, in the second liquid landing position P2 (see FIG. 3), the angle θV2 (see FIG. 3), and the angle θH2 (see FIG. 6), the position of the injection region T1 is arranged at the center of the upper surface of the substrate W. Thus, the position and posture are set such that the protective liquid discharged from the second protective liquid nozzle 7 is most efficiently spread over the entire injection region T1. In other words, the position and posture of the second protective liquid nozzle 7 attached to the nozzle holder 27 are not so suitable for supplying the protective liquid to the injection region T1 disposed on the upper surface of the substrate W except for the peripheral edge of the upper surface. Not.

As shown in FIGS. 3 and 4, in the substrate processing apparatus 1 according to the first embodiment, the postures of the first and second protective liquid nozzles 6 and 7 are equal to each other, and are shifted vertically. Yes. In other words, the first and second protective liquid nozzles 6 and 7 overlap each other in a plan view (FIG. 4 shows a slightly shifted state for convenience of illustration).
That is, in the substrate processing apparatus 1, the discharge port 43 of the first protective liquid nozzle 6 and the discharge port 44 of the second protective liquid nozzle 7 are shifted up and down, and as a result, the second liquid landing position P2 is The position is closer to the injection region T1 than the first liquid landing position P1 (Dc (see FIG. 5)> De (see FIG. 6). The second liquid landing position P2 is the first discharge port. 43 and the first liquid landing position P1 are arranged on an extended line.

The first discharge direction D1 is the same as the second discharge direction D2. That is, the angle θV2 (see FIG. 3) is the same as the angle θV1 (see FIG. 3), and the angle θH2 (see FIG. 6) is the same as the angle θH1 (see FIG. 5).
If the positions and postures of the first and second protective liquid nozzles 6 and 7 are optimized at the center of the upper surface and the peripheral edge of the upper surface of the substrate W, the first and second protective liquid nozzles are used. 6 and 7 are not only different in the positions of the discharge ports 43 and 44, but may also be different in posture. In this case, the first ejection direction D1 is also different from the second ejection direction D2. Further, the first and second protective liquid nozzles 6 and 7 may be provided so that the first and second liquid landing positions P1 and P2 of the discharged protective liquid are common. However, in this case, it is necessary to make the first ejection direction D1 and the second ejection direction D2 different from each other.

  In a first processing example (to be described later) executed using the substrate processing apparatus 1, the upper surface inner peripheral region (peripheral region of the upper surface central portion) IR including the upper surface central portion which is a portion including the rotation center C <b> 1 of the substrate W When the position of the ejection region T <b> 1 is arranged, the control device 8 does not discharge the protective liquid from the second protective liquid nozzle 7, but discharges the protective liquid from only the first protective liquid nozzle 6. Further, when the position of the injection region T <b> 1 is arranged in the upper surface outer peripheral region including the upper surface peripheral portion (peripheral region of the upper surface peripheral portion) OR, the control device 8 supplies the protective liquid from the first protective liquid nozzle 6. Without discharging, the protective liquid is discharged only from the first protective liquid nozzle 7.

With reference to FIGS. 1, 3, and 5, the flow of the protective liquid when the position of the injection region T <b> 1 is arranged at the center of the upper surface of the substrate W will be described.
The control device 8 discharges the protective liquid from the first protective liquid nozzle 6 while rotating the substrate W by the spin chuck 2. Since the protective liquid is supplied to the substrate W in the rotating state, the protective liquid supplied to the substrate W is accelerated in the radial direction (rotating radial direction) by contact with the substrate W, and the rotation direction Dr of the substrate W (see FIG. 6). Accordingly, the protective liquid supplied to the substrate W flows in the rotational direction while spreading in the radial direction from the first liquid deposition position P1. Since the first discharge direction D1 is inclined in the vertical direction and the rotation speed of the substrate W is slow at the central portion of the substrate W, the protective liquid supplied to the central portion of the upper surface of the substrate W is the first liquid deposition position. It spreads over a wide range while maintaining a triangular shape with P1 as one of its vertices.

With reference to FIGS. 1, 3, and 6, the flow of the protective liquid when the position of the spray region T <b> 1 is disposed on the peripheral edge of the upper surface of the substrate W will be described.
The control device 8 discharges the protective liquid from the second protective liquid nozzle 7 while rotating the substrate W by the spin chuck 2. Since the protective liquid is supplied to the substrate W in the rotating state, the protective liquid supplied to the substrate W is accelerated in the radial direction (rotating radial direction) by the contact with the substrate W and accelerated in the rotational direction Dr of the substrate W. Is done. Accordingly, the protective liquid supplied to the substrate W flows in the rotational direction while spreading in the radial direction from the second liquid deposition position P2. Since the rotation speed of the substrate W is fast at the peripheral edge of the substrate W, the protective liquid supplied to the peripheral edge of the upper surface of the substrate W has an acute triangular shape with a small angle with the second liquid landing position P2 as one vertex (substrate It spreads at a high speed in a substantially straight line along the circumferential direction of W).

7A to 7E are views for explaining a first processing example of the substrate W performed by the substrate processing apparatus 1 according to the first embodiment of the present invention. A first processing example will be described with reference to FIGS. 1 and 7A-7E.
For example, an unprocessed substrate W made of a circular substrate having a diameter of 300 mm is transported by a transport robot (not shown), and placed on the spin chuck 2 with the surface, which is a device formation surface, facing upward, for example. Then, the control device 8 holds the substrate W by the spin chuck 2. Thereafter, the control device 8 controls the spin motor 10 to rotate the substrate W held on the spin chuck 2.

  Next, the 1st cover process which supplies the pure water which is an example of the rinse liquid from the rinse liquid nozzle 4 to the board | substrate W, and covers the upper surface of the board | substrate W with a pure water is performed. Specifically, the control device 8 opens the rinse liquid valve 11 while rotating the substrate W by the spin chuck 2, and the substrate held on the spin chuck 2 from the rinse liquid nozzle 4 as shown in FIG. 7A. Pure water is discharged toward the center of the upper surface of W. The pure water discharged from the rinsing liquid nozzle 4 is supplied to the central portion of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W. Thus, pure water is supplied to the entire upper surface of the substrate W, and a liquid film of pure water is formed to cover the entire upper surface of the substrate W. When a predetermined time elapses after the rinsing liquid valve 11 is opened, the control device 8 closes the rinsing liquid valve 11 and stops the discharge of pure water from the rinsing liquid nozzle 4.

  Next, a cleaning step of supplying a droplet of carbonated water, which is an example of a processing solution, to the substrate W from the droplet nozzle 5 and cleaning the substrate W, and SC-1 which is an example of a protective solution are supplied to the substrate W. The second cover step of covering the upper surface of the substrate W with SC-1 is performed in parallel. That is, as shown in FIGS. 7B and 7C, the control device 8 selectively discharges SC-1 from the first and second protective liquid nozzles 6 and 7 and the liquid carbonate water from the droplet nozzle 5. While ejecting droplets and rotating the substrate W at a constant speed, the nozzle moving mechanism 20 causes the droplet nozzle 5 to reciprocate a plurality of times along the locus X1 between the center position Pc and the peripheral position Pe (half scan). ). Since the controller 8 moves the droplet nozzle 5 between the center position Pc and the peripheral position Pe while rotating the substrate W, the upper surface of the substrate W is scanned by the ejection region T1, and the position of the ejection region T1 is changed. It passes through the entire upper surface of the substrate W. As shown by a solid line in FIG. 2, the center position Pc is a position where the droplet nozzle 5 and the center of the upper surface of the substrate W overlap in a plan view. As shown by a two-dot chain line in FIG. This is a position where the droplet nozzle 5 and the peripheral edge of the upper surface of the substrate W overlap in plan view.

More specifically, when the position of the injection region T1 is arranged in the inner peripheral region of the upper surface of the substrate W, the protective liquid is discharged from the first protective liquid nozzle 6, and the position of the injection region T1 is When the protective liquid is disposed in the outer peripheral region of the upper surface, the protective liquid is discharged from the second protective liquid nozzle 7.
Next, a rinsing process is performed in which pure water, which is an example of a rinsing liquid, is supplied from the rinsing liquid nozzle 4 to the substrate W to wash away liquids and foreign matters adhering to the substrate W. Specifically, the control device 8 opens the rinsing liquid valve 11 while rotating the substrate W by the spin chuck 2, and the substrate held on the spin chuck 2 from the rinsing liquid nozzle 4 as shown in FIG. 7D. Pure water is discharged toward the center of the upper surface of W. The pure water discharged from the rinsing liquid nozzle 4 is supplied to the central portion of the upper surface of the substrate W, and spreads outward along the upper surface of the substrate W under the centrifugal force due to the rotation of the substrate W. Thereby, pure water is supplied to the entire upper surface of the substrate W, and the liquid and foreign matters adhering to the substrate W are washed away. When a predetermined time elapses after the rinsing liquid valve 11 is opened, the control device 8 closes the rinsing liquid valve 11 and stops the discharge of pure water from the rinsing liquid nozzle 4.

  Next, a drying process (spin drying) for drying the substrate W is performed. Specifically, the control device 8 controls the spin motor 10 to rotate the substrate W at a high rotation speed (for example, several thousand rpm). Thereby, a large centrifugal force acts on the pure water adhering to the substrate W, and the pure water adhering to the substrate W is shaken off around the substrate W as shown in FIG. 7E. In this way, pure water is removed from the substrate W, and the substrate W is dried. Then, after the drying process is performed for a predetermined time, the control device 8 controls the spin motor 10 to stop the rotation of the substrate W by the spin chuck 2. Thereafter, the processed substrate W is unloaded from the spin chuck 2 by the transfer robot.

  8A-8D and FIGS. 9E-9H are views for explaining the cleaning process and the second cover process. 10 and 11 are timing charts showing the opening and closing operations of the first and second protective liquid valves 26 and 29. FIG. FIG. 10 shows a case where the injection region T1 is moved from the upper surface periphery of the substrate W toward the upper surface center portion, and FIG. 11 shows a case where the injection region T1 is moved from the upper surface center portion of the substrate W toward the upper surface periphery portion. Show. The cleaning process and the second cover process will be described with reference to FIGS. 1, 8A-8D, 9E-9H, 10 and 11.

  The control device 8 controls the nozzle moving mechanism 20 to move the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7 to the home position outside the rotation range of the substrate W as shown in FIG. 8A. The lower surface 5a of the droplet nozzle 5 is moved close to the upper surface periphery of the substrate W. That is, the droplet nozzle 5 is arranged at the peripheral position Pe.

  Thereafter, the control device 8 opens the second protective liquid valve 29 while rotating the substrate W by the spin chuck 2, and discharges SC-1 from the second protective liquid nozzle 7 as shown in FIG. 8B. . The degree of opening of the flow rate adjusting valve 30 is such that the total discharge flow rate of the protective liquid from the first and second protective liquid nozzles 6 and 7 is a first small discharge flow rate (for example, about 0.5 liter / min). Therefore, SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the second protective liquid nozzle 7.

  Further, the controller 8 ejects carbonated water droplets from the droplet nozzle 5 in parallel with the SC-1 discharge from the second protective liquid nozzle 7. Specifically, the control device 8 includes the discharge valve 16 in a state where the lower surface 5a of the droplet nozzle 5 is close to the upper surface of the substrate W and SC-1 is discharged from the second protective liquid nozzle 7. And an AC voltage having a predetermined frequency is applied to the piezoelectric element 17 of the droplet nozzle 5 by the voltage application mechanism 19. A large number of carbonated water droplets are ejected downward from the droplet nozzle 5, whereby the position of the ejection region T <b> 1 is arranged on the peripheral edge of the upper surface of the substrate W. The SC-1 discharged from the second protective liquid nozzle 7 spreads over the entire jet region T1 disposed on the peripheral edge of the upper surface of the substrate W to form an SC-1 liquid film, and this SC-1 liquid film A large number of droplets of carbonated water are sprayed from the droplet nozzle 5 to the spray region T1 covered by the above.

  Further, as shown in FIG. 8B, the control device 8 rotates the substrate W at a constant rotation speed and discharges SC-1 from the second protective liquid nozzle 7 at a constant discharge flow rate. 20, the droplet nozzle 5 is moved along the upper surface of the substrate W toward the center position Pc. As a result, as shown in FIG. 8C, the position of the ejection region T1 is moved toward the rotation center C1 of the substrate W while the upper surface outer peripheral region OR of the substrate W is covered with the SC-1 liquid film.

As shown in FIGS. 8D and 10, at the timing when the droplet nozzle 5 passes through the intermediate position Pm, the control device 8 closes the second protective liquid valve 29 and the SC from the second protective liquid nozzle 7. -1 is stopped and the first protective liquid valve 26 is opened, and SC-1 is discharged from the first protective liquid nozzle 6.
That is, the protective liquid nozzle that discharges the protective liquid is switched from the second protective liquid nozzle 7 to the first protective liquid nozzle 6. As described above, the opening degree of the flow rate adjusting valve 30 is determined so that the total discharge flow rate of the protective liquid from the first and second protective liquid nozzles 6 and 7 is the first discharge flow rate (for example, about 0.5 liter). Therefore, SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the first protective liquid nozzle 6. The ejection of carbonated water droplets from the droplet nozzle 5 is continued, and SC-1 discharged from the second protective liquid nozzle 7 is the entire ejection region T1 disposed in the intermediate portion M1 of the substrate W. As a result, an SC-1 liquid film covering the entire injection region T1 is formed. The intermediate position Pm is a position where the droplet nozzle 5 and the intermediate portion M1 of the substrate W overlap in plan view (more specifically, a position where the central position M of the ejection region T1 overlaps the intermediate portion M1 of the substrate W). The intermediate portion M1 of the substrate W is an intermediate portion between the rotation center C1 of the substrate W and the peripheral edge of the substrate W (in the case of the substrate W having a diameter of 300 mm, the position is 75 mm from the rotation center C1).

Further, the controller 8 rotates the substrate W at a constant rotation speed toward the center position Pc of the droplet nozzle 5 while discharging SC-1 from the first protective liquid nozzle 6 at a constant discharge flow rate. Continue moving. Thus, the position of the ejection region T1 is moved toward the rotation center C1 of the substrate W while the upper surface inner circumferential region IR is covered with the SC-1 liquid film.
Thereafter, as shown in FIG. 9E, when the droplet nozzle 5 reaches the center position Pc, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Therefore, the droplet nozzle 5 is started to move from the center position Pc toward the peripheral position Pe. Thereby, a droplet of carbonated water is ejected from the droplet nozzle 5 and the SC-1 is discharged from the second protective liquid nozzle 7, while the droplet nozzle 5 and the first and second protective liquid nozzles 6, 7 is moved toward the peripheral position Pe. As a result, the position of the injection region T1 is moved toward the peripheral edge of the substrate W while being covered with the SC-1 liquid film as shown in FIG. 9F.

As shown in FIGS. 9G and 11, at the timing when the droplet nozzle 5 passes through the intermediate position Pm, the control device 8 closes the first protective liquid valve 26 and the SC from the first protective liquid nozzle 6. -1 is stopped, the second protective liquid valve 29 is opened, and SC-1 is discharged from the second protective liquid nozzle 7.
That is, the protective liquid nozzle that discharges the protective liquid is switched from the first protective liquid nozzle 6 to the second protective liquid nozzle 7. Thereby, SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the second protective liquid nozzle 7. The ejection of carbonated water droplets from the droplet nozzle 5 is continued, and SC-1 discharged from the second protective liquid nozzle 7 is the entire ejection region T1 disposed in the intermediate portion M1 of the substrate W. As a result, an SC-1 liquid film covering the entire injection region T1 is formed.

Further, the control device 8 discharges the SC-1 from the second protective liquid nozzle 7 at a constant discharge flow rate, and proceeds to the rotation of the substrate W at a constant rotation speed and the peripheral position Pe of the droplet nozzle 5. Continue moving. Thereby, the upper surface outer peripheral region OR is moved toward the periphery of the substrate W while the position of the injection region T1 is covered with the liquid film of SC-1.
Thereafter, as shown in FIG. 9H, when the droplet nozzle 5 reaches the peripheral position Pe, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Thereby, the droplet nozzle 5 is started to move from the peripheral position Pe toward the center position Pc.

As described above, the control device 8 moves the droplet nozzle 5 between the center position Pc and the peripheral position Pe while rotating the substrate W, so that the upper surface of the substrate W is scanned by the ejection region T1 and the ejection region. The position of T1 passes through the entire upper surface of the substrate W.
A large number of carbonated water droplets are sprayed downward from the droplet nozzle 5, whereby a large number of carbonated water droplets are sprayed onto the injection region T <b> 1 covered with the SC-1 liquid film. Accordingly, carbonated water droplets are sprayed over the entire upper surface of the substrate W. Foreign substances such as particles adhering to the upper surface of the substrate W are physically removed by the collision of the droplets with the substrate W. Further, the bonding force between the foreign matter and the substrate W is weakened by the SC-1 dissolving the substrate W. Therefore, foreign matters are more reliably removed. In addition, since the carbonated water droplets are sprayed onto the ejection region T1 in a state where the entire upper surface of the substrate W is covered with the liquid film, the reattachment of foreign matters to the substrate W is suppressed or prevented. In this way, the second cover process and the cleaning process are performed.

  In the cleaning step and the second cover step, when the position of the spray region T1 to be scanned is arranged in the upper surface inner peripheral region IR, the control device 8 does not discharge the protective liquid from the second protective liquid nozzle 7. In addition, the protective liquid is discharged only from the first protective liquid nozzle 6. Further, as described above, the position and posture of the first protective liquid nozzle 6 are optimized in a state where the position of the ejection region T1 is arranged at the center of the upper surface of the substrate W. Therefore, even if the position of the injection region T1 is arranged at any position of the upper surface inner peripheral region IR, the protective liquid discharged from the first protective liquid nozzle 6 spreads over the entire region of the injection region T1, thereby The SC-1 liquid film covering the entire jet region T1 is formed.

  Further, in the cleaning step and the second cover step, when the position of the spray region T1 to be scanned is arranged in the upper surface outer peripheral region OR, the control device 8 causes the first protective liquid nozzle 6 to discharge the protective liquid. Instead, the protective liquid is discharged only from the second protective liquid nozzle 7. Further, as described above, the position and posture of the second protective liquid nozzle 7 are optimized in a state where the position of the injection region T1 is disposed on the upper peripheral edge of the substrate W. Therefore, even if the position of the injection region T1 is arranged at any position of the upper surface outer peripheral region OR, the protective liquid discharged from the second protective liquid nozzle 7 spreads over the entire area of the injection region T1, thereby An SC-1 liquid film is formed to cover the entire jet region T1.

The upper surface inner peripheral region IR refers to a region on the inner peripheral side of the intermediate portion M1 on the upper surface of the substrate W, and the upper surface outer peripheral region OR refers to a region on the outer peripheral side of the intermediate portion M1 on the upper surface of the substrate W.
When the reciprocating rocking motion of the nozzle arm 21 is performed a predetermined number of times, the control device 8 opens the discharge valve 16 and stops the ejection of droplets from the droplet nozzle 5. Further, the control device 8 closes the first or second protective liquid valves 26 and 29 in the open state, and stops the discharge of SC-1 from the first or second protective liquid nozzles 6 and 7.

FIG. 12 is a graph showing the relationship between the flow rate of the protective liquid supplied to the substrate W and the number of damages of the substrate W in Example 1 and Comparative Example 1.
Example 1 shows the case where the second cover process and the cleaning process for switching the protective liquid nozzle that discharges the protective liquid are executed as in the above-described processing example 1, and Comparative Example 1 shows the first protective liquid nozzle 6. The case where a 2nd cover process and a washing | cleaning process are performed, discharging a protective liquid only from this is shown. Further, it is assumed that a polysilicon thin film having a thickness of 37 nm is formed on the upper surface of the substrate W. The damage numbers in FIG. 12 are measured values when the substrate W is processed under the same conditions except for the flow rate of the protective liquid supplied to the substrate W. Specifically, the temperature of the supplied protective liquid (SC-1) is 40 ° C., the flow rate of the protective liquid during discharge is 38 m / s, and the rotation speed of the substrate is 300 rpm. Further, the time required for one reciprocating swinging operation (reciprocating half scan) of the nozzle arm 21 is 10 seconds, and the number of executions of the half scan is three.

In Comparative Example 1, the number of damages is large when the flow rate of the protective liquid supplied to the substrate W is less than 0.7 liter / min. On the other hand, in Example 1, even if the flow rate of the protective liquid supplied to the substrate W is 0.5 liter / min, the number of damages is extremely small. Therefore, in the case of the first processing example, damage to the substrate W can be suppressed without increasing the flow rate of the protective liquid supplied to the substrate W.
As described above, according to this embodiment, when the position of the ejection region T1 is disposed in the upper surface inner peripheral region IR of the substrate W, the protective liquid is discharged only from the first protective liquid nozzle 6. In the first protective liquid nozzle 6, the protective liquid discharged from the first protective liquid nozzle 6 spreads over the entire area of the injection region T <b> 1 in a state where the position of the injection region T <b> 1 is disposed at the center of the upper surface of the substrate W. Has been optimized. Therefore, even if the flow rate of the protective liquid supplied to the substrate W is small, the entire jet region T1 arranged in the upper surface inner peripheral region IR can be covered with the protective liquid film.

  Further, when the position of the injection region T1 is disposed in the upper surface outer peripheral region OR of the substrate W, the protective liquid is discharged only from the second protective liquid nozzle 7. The second protective liquid nozzle 7 allows the protective liquid discharged from the second protective liquid nozzle 7 to spread over the entire injection area in a state where the position of the injection area T1 is disposed on the peripheral edge of the upper surface of the substrate W. Optimized for. Therefore, even if the flow rate of the protective liquid supplied to the substrate W is small, the entire jet region T1 arranged in the upper surface outer peripheral region OR can be covered with the protective liquid film.

As a result, even if the position of the injection region T1 is arranged at any position on the upper surface of the substrate W, the entire region of the injection region T1 is covered with a liquid film of the protective liquid by supplying a small flow of the protective liquid to the substrate W. be able to. Thereby, damage to the substrate W can be suppressed without increasing the flow rate of the protective liquid supplied to the substrate W.
The protective liquid nozzle that discharges the protective liquid in a state where the position of the ejection region T1 is moved from the center of the upper surface of the substrate W toward the peripheral edge of the upper surface of the substrate W is the first protective liquid nozzle 6. To the second protective liquid nozzle 7. Further, the protective liquid nozzle that discharges the protective liquid in a state where the position of the ejection region T1 is moved from the peripheral edge of the upper surface of the substrate W toward the center of the upper surface of the substrate W is the second protective liquid nozzle 7. To the first protective liquid nozzle 6. Thereby, when the position of the ejection region T1 is arranged in the upper surface inner peripheral region IR of the substrate W, the protective liquid is supplied to the substrate W only from the first protective liquid nozzle 6, and the upper surface outer peripheral region of the substrate W When the position of the injection region T <b> 1 is arranged in the OR, the protective liquid is supplied to the substrate W only from the second protective liquid nozzle 7. Therefore, even if the position of the injection region T1 is arranged at any position on the upper surface of the substrate W, the entire region of the injection region T1 can be covered with the liquid film of the protective liquid by supplying the small amount of the protective liquid.

However, Processing Example 1 has the following problem.
That is, in the state where the position of the ejection region T1 is moved from the peripheral edge of the upper surface of the substrate W toward the center of the upper surface of the substrate W, the timing of stopping the discharge of the second protective liquid nozzle 7 is the first protective liquid. When the discharge start timing of the nozzle 6 is earlier, there is a possibility that a period during which the protective liquid is not discharged from both the first and second protective liquid nozzles 6 and 7 may occur. During such a period, the upper surface of the substrate W is not protected by the protective liquid, and as a result, the substrate W may be damaged.

In a state where the position of the ejection region T1 is moved from the center of the upper surface of the substrate W toward the peripheral edge of the upper surface of the substrate W, the timing of stopping the discharge of the first protective liquid nozzle 6 is the second protective liquid nozzle 7. The same problem also occurs when it is earlier than the discharge start timing.
In order to solve such a problem, the following second processing example can be adopted.
FIGS. 13A to 13D, FIGS. 14E to 14H, and FIGS. 15I to 15L are diagrams for explaining a second processing example of the substrate W performed by the substrate processing apparatus 1. FIGS. FIGS. 16 and 17 are timing charts showing the opening / closing operations of the first and second protective liquid valves 26 and 29. FIG. 16 shows a case where the injection region T1 is moved from the upper surface periphery of the substrate W toward the upper surface center portion, and FIG. 17 shows a case where the injection region T1 is moved from the upper surface center portion of the substrate W toward the upper surface periphery portion. Show.

  FIGS. 13A to 13D, FIGS. 14E to 14H, and FIGS. 15I to 15L show a cleaning process and a second cover process in the second processing example. The second processing example is different from the first processing example only in the cleaning step and the second cover step. The other steps are the same as in the case of the first processing example, and thus the description thereof is omitted. With reference to FIG. 1, FIG. 13A-13D, FIG. 14E-14H, FIG. 15I-15L, FIG. 16, and FIG. 17, the washing | cleaning process and 2nd cover process in a 2nd process example are demonstrated.

  The control device 8 controls the nozzle moving mechanism 20 to move the droplet nozzle 5 and the first and second protective liquid nozzles 6 and 7 to the home position outside the rotation range of the substrate W as shown in FIG. 13A. The lower surface 5a of the droplet nozzle 5 is moved close to the upper surface periphery of the substrate W. That is, the droplet nozzle 5 is arranged at the peripheral position Pe.

Thereafter, the control device 8 opens the second protective liquid valve 29 while rotating the substrate W by the spin chuck 2, and discharges SC-1 from the second protective liquid nozzle 7 as shown in FIG. 13B. . SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the second protective liquid nozzle 7.
Further, the controller 8 ejects carbonated water droplets from the droplet nozzle 5 in parallel with the SC-1 discharge from the second protective liquid nozzle 7. A large number of carbonated water droplets are ejected downward from the droplet nozzle 5, whereby the position of the ejection region T <b> 1 is arranged on the peripheral edge of the upper surface of the substrate W. The SC-1 discharged from the second protective liquid nozzle 7 spreads over the entire jet region T1 disposed on the peripheral edge of the upper surface of the substrate W to form an SC-1 liquid film, and this SC-1 liquid film A large number of droplets of carbonated water are sprayed from the droplet nozzle 5 to the spray region T1 covered by the above.

  Furthermore, as shown in FIG. 13B, the control device 8 rotates the substrate W at a constant rotation speed and discharges SC-1 from the second protective liquid nozzle 7 at a constant discharge flow rate, while moving the nozzle moving mechanism. 20, the droplet nozzle 5 is moved along the upper surface of the substrate W toward the center position Pc. Thereby, as shown in FIG. 13C, the position of the ejection region T1 is moved toward the rotation center C1 of the substrate W while the upper surface outer peripheral region OR of the substrate W is covered with the liquid film of SC-1.

  As shown in FIGS. 13D and 16, the timing at which the droplet nozzle 5 passes a predetermined position closer to the outer periphery than the intermediate position Pm (more specifically, the central position M of the ejection region T <b> 1 is intermediate on the upper surface of the substrate W). The control device 8 opens the first protective liquid valve 26 while maintaining the second protective liquid valve 29 in the open state at the timing of passing through the outer portion M2 closer to the outer circumference than the part M1). SC-1 is discharged from the protective liquid nozzle 6. Thereby, simultaneous discharge of SC-1 by both the first and second protective liquid nozzles 6 and 7 is started. As described above, the opening degree of the flow rate adjusting valve 30 is determined so that the total discharge flow rate of the protective liquid from the first and second protective liquid nozzles 6 and 7 is the first discharge flow rate (for example, about 0.5 liter). Therefore, SC-1 having a discharge flow rate of about 0.25 liter / min is discharged from the first and second protective liquid nozzles 6 and 7, respectively.

The ejection of carbonated water droplets from the droplet nozzle 5 is continued, and the SC-1 discharged from the first and second protective liquid nozzles 6 and 7 is disposed in the outer portion M2 on the upper surface of the substrate W. The SC-1 liquid film is formed over the entire injection region T1, thereby covering the entire injection region T1.
Thereafter, the controller 8 rotates the substrate W at a constant rotation speed toward the center position Pc of the droplet nozzle 5 while discharging SC-1 from the first protective liquid nozzle 6 at a constant discharge flow rate. Continue moving. As a result, as shown in FIG. 14E, the droplet nozzle 5 reaches the intermediate position Pm, and is further moved along the upper surface of the substrate W toward the center position Pc.

  14F and FIG. 16, the timing at which the droplet nozzle 5 passes a predetermined position closer to the inner periphery than the intermediate position Pm (more specifically, the central position M of the ejection region T1 is the upper surface of the substrate W). The control device 8 closes the second protective liquid valve 29 and discharges SC-1 from the second protective liquid nozzle 7 at a timing of passing through the inner portion M3 closer to the inner periphery than the intermediate portion M1. Stop. Thereby, the simultaneous discharge of SC-1 by both the first and second protective liquid nozzles 6 and 7 ends, and thereafter, SC-1 is discharged from only the first protective liquid nozzle 6. As described above, the opening degree of the flow rate adjusting valve 30 is determined so that the total discharge flow rate of the protective liquid from the first and second protective liquid nozzles 6 and 7 is the first discharge flow rate (for example, about 0.5 liter). Therefore, SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the first protective liquid nozzle 6 at this time.

Further, the controller 8 rotates the substrate W at a constant rotation speed toward the center position Pc of the droplet nozzle 5 while discharging SC-1 from the first protective liquid nozzle 6 at a constant discharge flow rate. Continue moving. Thus, the position of the ejection region T1 is moved toward the rotation center C1 of the substrate W while the upper surface inner circumferential region IR is covered with the SC-1 liquid film.
Thereafter, as shown in FIG. 14G, when the droplet nozzle 5 reaches the center position Pc, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Thereby, the droplet nozzle 5 is started to move from the center position Pc toward the peripheral position Pe. Thereafter, a droplet of carbonated water is ejected from the droplet nozzle 5 and SC-1 is discharged from the second protective liquid nozzle 7, while the droplet nozzle 5 and the first and second protective liquid nozzles 6, 7. Is moved toward the center position Pc. As a result, the position of the ejection region T1 is moved from the center of the upper surface of the substrate W toward the periphery of the upper surface while being covered with the liquid film SC-1.

  Thereafter, a droplet of carbonated water is ejected from the droplet nozzle 5 and the SC-1 is discharged from the second protective liquid nozzle 7, and as shown in FIG. The protective liquid nozzles 6 and 7 are moved toward the peripheral position Pe. Thereby, the upper surface inner peripheral region IR is moved toward the periphery of the substrate W while the position of the injection region T1 is covered with the liquid film of SC-1.

  As shown in FIGS. 15I and 17, the timing at which the droplet nozzle 5 passes through a predetermined position closer to the inner periphery than the intermediate position Pm (more specifically, the central position M of the ejection region T1 is the inner side of the upper surface of the substrate W). At the timing of passing the portion M3, the control device 8 opens the second protective liquid valve 29 while maintaining the first protective liquid valve 26 in an open state, and then opens the second protective liquid nozzle 7 from the SC-1 To discharge. Thereby, simultaneous discharge of SC-1 by both the first and second protective liquid nozzles 6 and 7 is started. At this time, SC-1 having a discharge flow rate of about 0.25 liter / min is discharged from the first and second protective liquid nozzles 6 and 7, respectively.

The ejection of carbonated water droplets from the droplet nozzle 5 is continued, and the SC-1 discharged from the first and second protective liquid nozzles 6 and 7 is disposed in the inner portion M3 of the upper surface of the substrate W. The SC-1 liquid film is formed over the entire injection region T1, thereby covering the entire injection region T1.
Thereafter, the control device 8 is directed to the rotation of the substrate W at a constant rotational speed and the peripheral position Pe of the droplet nozzle 5 while discharging SC-1 from the first protective liquid nozzle 6 at a constant discharge flow rate. Continue moving. As a result, as shown in FIG. 15J, the droplet nozzle 5 reaches the intermediate position Pm, and is further moved along the upper surface of the substrate W toward the peripheral position Pe.

  Then, as shown in FIGS. 15K and 17, the timing at which the droplet nozzle 5 passes a predetermined position closer to the outer periphery than the intermediate position Pm (more specifically, the central position M of the ejection region T1 is the upper surface of the substrate W). The control device 8 closes the first protective liquid valve 26 and stops the discharge of SC-1 from the first protective liquid nozzle 6 at the timing of passing through the outer portion M2. Thereby, the simultaneous discharge of SC-1 by both the first and second protective liquid nozzles 6 and 7 is completed, and thereafter, SC-1 is discharged only from the second protective liquid nozzle 7. At this time, SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the second protective liquid nozzle 7.

Further, the control device 8 discharges the SC-1 from the second protective liquid nozzle 7 at a constant discharge flow rate, and proceeds to the rotation of the substrate W at a constant rotation speed and the peripheral position Pe of the droplet nozzle 5. Continue moving. Thereby, the position of the injection region T1 is moved toward the peripheral edge of the substrate W while being covered with the liquid film of SC-1.
Thereafter, as shown in FIG. 15L, when the droplet nozzle 5 reaches the peripheral position Pe, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Thereby, the droplet nozzle 5 is started to move from the peripheral position Pe toward the center position Pc.

  The period required for the movement of the ejection region T1 (droplet nozzle 5) from the upper surface periphery of the substrate W to the center of the upper surface of the substrate W, and the ejection region T1 (from the center of the upper surface of the substrate W to the periphery of the upper surface of the substrate W) When the period required for the movement of the droplet nozzle 5) is set to 5.0 seconds, the period during which the protective liquid is simultaneously discharged from the first and second protective liquid nozzles 6 and 7 (first and second protection) When one of the liquid valves 26 and 29 is in the open state, the other of the first and second protective liquid valves 26 and 29 is opened, and then one of the first and second protective liquid valves 26 and 29 is closed. Is set to 0.2 seconds, for example.

When the reciprocating rocking motion of the nozzle arm 21 is performed a predetermined number of times, the control device 8 opens the discharge valve 16 and stops the ejection of droplets from the droplet nozzle 5. Further, the control device 8 closes the first or second protective liquid valves 26 and 29 in the open state, and stops the discharge of SC-1 from the first or second protective liquid nozzles 6 and 7.
As described above, according to this second processing example, the discharge of the protective liquid from the first protective liquid nozzle 6 is started prior to the stop of the discharge from the second protective liquid nozzle 7, and the first protective liquid nozzle Prior to stopping the discharge from 6, discharge of the protective liquid from the second protective liquid nozzle 7 is started. In other words, the discharge period of the protective liquid from the first protective liquid nozzle 6 and the discharge period of the protective liquid from the second protective liquid nozzle 7 are partially overlapped. Thus, when the protective liquid nozzle that discharges the protective liquid is switched between the first protective liquid nozzle 6 and the second protective liquid nozzle 7, the protection from the first and second protective liquid nozzles 6 and 7 is protected. It is possible to provide a period during which the liquid is discharged simultaneously, and it is ensured that the protective liquid is not discharged from both the first and second protective liquid nozzles 6 and 7 when the protective liquid nozzle that discharges the protective liquid is switched. Can be prevented.

Next explained is the second embodiment of the invention. In the following FIGS. 18 to 24F, the same components as those shown in FIGS. 1 to 17 are given the same reference numerals as those in FIG. 1 and the description thereof is omitted.
FIG. 18 is a diagram schematically showing the configuration of a substrate processing apparatus 201 according to the second embodiment of the present invention.

  The substrate processing apparatus 201 according to the second embodiment has the same configuration as the substrate processing apparatus 1 according to the first embodiment except for the protective liquid nozzle. That is, the substrate processing apparatus 201 replaces the first and second protective liquid nozzles 6 and 7 according to the first embodiment with the positions and postures of the third protective liquid nozzle 206 and the third protective liquid nozzle 206. And a nozzle changing mechanism 207 for changing.

  The third protective liquid nozzle 206 is held by a nozzle holder 24 attached to the nozzle arm 21. Therefore, when the rotation mechanism 22 rotates the nozzle arm 21, the third protective liquid nozzle 206 moves horizontally along the locus X1 (see FIG. 2) together with the droplet nozzle 5. The nozzle changing mechanism 207 changes both the position of the nozzle holder 24 and the vertical and horizontal angles with respect to the spin chuck 2 to change the position and posture of the third protective liquid nozzle 206.

  The third protective liquid nozzle 206 is connected to a third protective liquid supply pipe 225 in which a third protective liquid valve 226 and a flow rate adjustment valve 227 are interposed. When the third protective liquid valve 226 is opened, the protective liquid is discharged from the third protective liquid nozzle 206 toward the upper surface of the substrate W. On the other hand, when the third protective liquid valve 226 is closed, the discharge of the protective liquid from the third protective liquid nozzle 206 is stopped. The discharge speed of the protective liquid from the third protective liquid nozzle 206 is changed by the control device 8 adjusting the opening degree of the flow rate adjustment valve 327. Examples of the protective liquid supplied to the third protective liquid nozzle 206 include a rinse liquid and a chemical liquid such as SC-1.

The third protective liquid nozzle 206 has a third discharge port 243 (FIGS. 19 to 22) for discharging the protective liquid. The third discharge port 243 is disposed below the upper end of the droplet nozzle 5. The third discharge port 243 is circular, for example. The third discharge port 243 is not limited to a circle but may be an ellipse or a slit.
In the substrate processing apparatus 201, at least one of the position and posture of the third protective liquid nozzle 206 can be changed according to the position of the ejection region T <b> 1 on the upper surface of the substrate W. In a third processing example (described later) using the substrate processing apparatus 201, the third protective liquid nozzle 206 is moved up and down in accordance with the position of the ejection region T1 on the upper surface of the substrate W.

19 and 20 are schematic diagrams showing the positional relationship between the droplet nozzle 5 and the third protective liquid nozzle 206 when the position of the ejection region T1 is disposed at the center of the upper surface of the substrate W. FIG. 19 and a side view are shown, and FIG. 20 is a plan view.
When the position of the ejection region T1 is disposed at the center of the upper surface of the substrate W, the third protective liquid nozzle 206 discharges the protective liquid toward the third liquid landing position P3 on the substrate W. The position and posture of the third protective liquid nozzle 206 shown in FIGS. 19 and 20 are referred to as “first position and posture”.

  The third liquid landing position P3 is a position on the upstream side of the ejection region T1 with respect to the rotation direction Dr of the substrate W. A distance Dc (see FIG. 20) from the third liquid landing position P3 to the center position M of the injection region T1 is, for example, a predetermined distance of 15 to 40 mm. The third discharge port 243 discharges the protective liquid in the third discharge direction D3 toward the third liquid deposition position P3. In other words, the protective liquid from the third discharge port 243 enters the third discharge direction D3 with respect to the third liquid landing position P3 on the substrate W. The third discharge direction D3 is a direction from the third discharge port 243 toward the third liquid deposition position P3, and is a direction from the third discharge port 243 toward the droplet nozzle 5 in plan view. The third ejection direction D3 is inclined with respect to the longitudinal direction D5. An angle θH3 (see FIG. 20) formed by the longitudinal direction D5 and the third ejection direction D3 in plan view is set to a predetermined angle within a range of 25 to 35 degrees, for example.

  As shown in FIG. 19, the third ejection direction D3 is inclined toward the injection region T1 with respect to the vertical direction. In other words, the third liquid deposition position P3 is disposed on the ejection region T1 side with respect to the third ejection port 243 in the horizontal direction, and the third ejection direction D3 is inclined with respect to the upper surface of the substrate W. . An angle (incident angle) θV3 (see FIG. 19) formed by the upper surface of the substrate W and the third ejection direction D3 is set to a predetermined angle within a range of 10 to 40 degrees, for example.

FIG. 21 and FIG. 22 are schematic diagrams showing the positional relationship between the droplet nozzle 5 and the third protective liquid nozzle 206 when the position of the ejection region T1 is arranged on the peripheral edge of the upper surface of the substrate W. FIG. 21 shows a side view, and FIG. 22 shows a plan view.
In the case where the position of the ejection region T1 is disposed on the peripheral edge of the upper surface of the substrate W, the third protective liquid nozzle 206 discharges the protective liquid toward the fourth liquid landing position P4 on the substrate W. The position and posture of the third protective liquid nozzle 206 shown in FIGS. 21 and 22 are referred to as “second position and posture”.

  The fourth liquid deposition position P4 is a position upstream of the injection region T1 with respect to the rotation direction Dr of the substrate W. A distance Dc (see FIG. 22) from the fourth liquid landing position P4 to the center position M of the injection region T1 is, for example, a predetermined distance of 15 to 40 mm. The third discharge port 243 discharges the protective liquid in the fourth discharge direction D4 toward the third liquid landing position P3. In other words, the protective liquid from the third discharge port 243 enters the fourth discharge direction D4 with respect to the fourth liquid deposition position P4 on the substrate W. The fourth discharge direction D4 is a direction from the third discharge port 243 toward the fourth liquid deposition position P4, and is a direction from the third discharge port 243 toward the droplet nozzle 5 in plan view. The fourth ejection direction D4 is inclined with respect to the longitudinal direction D5. An angle θH4 (see FIG. 22) formed by the longitudinal direction D5 and the fourth ejection direction D4 in plan view is set to a predetermined angle within a range of 25 to 35 degrees, for example.

  As shown in FIG. 21, the fourth discharge direction D4 is inclined toward the injection region T1 with respect to the vertical direction. In other words, the fourth liquid deposition position P4 is disposed on the ejection region T1 side with respect to the third ejection port 243 in the horizontal direction, and the fourth ejection direction D4 is inclined with respect to the upper surface of the substrate W. . An angle (incident angle) θV4 (see FIG. 21) formed by the upper surface of the substrate W and the fourth ejection direction D4 is set to a predetermined angle within a range of 10 to 40 degrees, for example.

  The first position and posture of the third protective liquid nozzle 206 are optimized in a state where the position of the ejection region T1 is arranged at the center of the upper surface of the substrate W. That is, for the third liquid landing position P3 (see FIG. 19), the angle θV3 (see FIG. 19) and the angle (incident angle) θH3 (see FIG. 20), the position of the injection region T1 is arranged at the center of the upper surface of the substrate W. In such a state, the protective liquid discharged from the third protective liquid nozzle 206 is set to a position and posture so as to spread most efficiently over the entire injection region T1. In other words, the first position and posture of the third protective liquid nozzle 206 are not very suitable for supplying the protective liquid to the ejection region T1 disposed on the upper surface of the substrate W except for the central portion of the upper surface.

  In addition, the second position and posture of the third protective liquid nozzle 206 are optimized in a state where the position of the ejection region T1 is disposed on the upper surface periphery of the substrate W. That is, in the fourth liquid landing position P4 (see FIG. 21), the angle θV4 (see FIG. 21) and the angle (incident angle) θH4 (see FIG. 22), the position of the injection region T1 is arranged on the peripheral edge of the upper surface of the substrate W. In such a state, the protective liquid discharged from the third protective liquid nozzle 206 is set to a position and posture so as to spread most efficiently over the entire injection region T1. In other words, the first position and posture of the third protective liquid nozzle 206 are not very suitable for supplying the protective liquid to the ejection region T1 disposed on the upper surface of the substrate W excluding the peripheral edge of the upper surface.

  In the third processing example in the substrate processing apparatus 201, the third protective liquid nozzle 206 has the same posture in the first position and posture and in the second position and posture. The arrangement position is shifted up and down. Therefore, the arrangement position of the discharge port 243 is shifted up and down between the first position and posture and the second position and posture. As a result, the fourth liquid landing position P4 is The position is closer to the injection region T1 than the third liquid landing position P3 (Dc (see FIG. 20)> De (see FIG. 22)). The 4th liquid landing position P4 is arrange | positioned on the extension line of the line segment which connects the discharge outlet 243 and the 3rd liquid landing position P3.

The third ejection direction D3 is the same direction as the fourth ejection direction D4. That is, the angle θV4 (see FIG. 21) is the same as the angle θV3 (see FIG. 19), and the angle θH4 (see FIG. 22) is the same as the angle θH3 (see FIG. 20). Further, the fourth liquid landing position P4 is disposed on an extension line of a line connecting the third discharge port 243 and the third liquid landing position P3.
If the first and second positions and postures of the third protective liquid nozzle 206 are optimized at the center of the upper surface and the peripheral edge of the upper surface of the substrate W, the third protective liquid nozzle 206 is used. In addition, the position of the discharge port 243 as well as the position of the third protective liquid nozzle 206 may be different between the first position and the position and the second position and the position. In this case, the third ejection direction D3 is also different from the second ejection direction D4.

Further, the first and second positions and postures can be set so that the liquid landing positions P3 and P4 of the discharged protective liquid are common. However, in this case, it is necessary to make the third ejection direction D3 and the fourth ejection direction D4 different from each other.
With reference to FIGS. 18 to 20, the flow of the protective liquid when the position of the ejection region T <b> 1 is arranged at the center of the upper surface of the substrate W will be described. The control device 8 discharges the protective liquid from the third protective liquid nozzle 206 while rotating the substrate W by the spin chuck 2. Since the protective liquid is supplied to the substrate W in the rotating state, the protective liquid supplied to the substrate W is accelerated in the radial direction (rotating radial direction) by contact with the substrate W, and the rotation direction Dr of the substrate W (see FIG. 22)). Accordingly, the protective liquid supplied to the substrate W flows in the rotational direction while spreading in the radial direction from the third liquid deposition position P3. Since the third discharge direction D3 is inclined in the vertical direction and the rotation speed of the substrate W is slow at the center portion of the substrate W, the protective liquid supplied to the center portion of the upper surface of the substrate W is the third liquid landing position. It spreads over a wide range while maintaining a triangular shape with P3 as one of its vertices.

  With reference to FIGS. 18, 21, and 22, the flow of the protective liquid when the position of the spray region T <b> 1 is disposed on the peripheral edge of the upper surface of the substrate W will be described. The control device 8 discharges the protective liquid from the third protective liquid nozzle 206 while rotating the substrate W by the spin chuck 2. Since the protective liquid is supplied to the substrate W in the rotating state, the protective liquid supplied to the substrate W is accelerated in the radial direction (rotating radial direction) by the contact with the substrate W and accelerated in the rotational direction Dr of the substrate W. Is done. Accordingly, the protective liquid supplied to the substrate W flows in the rotational direction while spreading in the radial direction from the fourth liquid deposition position P4. Since the rotation speed of the substrate W is fast at the peripheral edge of the substrate W, the protective liquid supplied to the peripheral edge of the upper surface of the substrate W has an acute triangular shape with a small angle with the fourth landing position P4 as one vertex (substrate It spreads at a high speed in a substantially linear shape along the circumferential direction of W.

23A-23D and FIGS. 24E-24F are views for explaining a third processing example of the substrate W performed by the substrate processing apparatus 201 according to the second embodiment of the present invention.
In the third processing example, only the cleaning process and the second cover process are different from the first processing example by the substrate processing apparatus 1. The other steps are the same as in the case of the first processing example, and thus the description thereof is omitted. With reference to FIGS. 18-24F, the washing | cleaning process and 2nd cover process in a 3rd process example are demonstrated.

  The control device 8 controls the nozzle moving mechanism 20 to move the droplet nozzle 5 and the third protective liquid nozzle 206 from a home position (not shown) outside the rotation range of the substrate W, as shown in FIG. 23A. The substrate is moved above the spin chuck 2 and the lower surface 5 a of the droplet nozzle 5 is brought close to the peripheral edge of the upper surface of the substrate W. That is, the droplet nozzle 5 is arranged at the peripheral position Pe. In this state, the third protective liquid nozzle 206 is controlled to the second position and posture (see FIGS. 21 and 22).

  Thereafter, the control device 8 opens the third protective liquid valve 226 while rotating the substrate W by the spin chuck 2, and discharges SC-1 from the third protective liquid nozzle 206 as shown in FIG. 23B. . The opening degree of the flow rate adjusting valve 227 is adjusted so that the protective liquid is discharged from the third protective liquid nozzle 206 at a first discharge flow rate (for example, about 0.5 liter / min) at a predetermined small flow rate. The SC-1 having a discharge flow rate of about 0.5 liter / min is discharged from the third protective liquid nozzle 206.

  Further, the control device 8 ejects carbonated water droplets from the droplet nozzle 5 in parallel with the SC-1 ejection from the third protective liquid nozzle 206. A large number of carbonated water droplets are ejected downward from the droplet nozzle 5, whereby the position of the ejection region T <b> 1 is arranged on the peripheral edge of the upper surface of the substrate W. The SC-1 discharged from the third protective liquid nozzle 206 arranged in the second position and posture (see FIGS. 21 and 22) is the fourth liquid landing position P4 (see FIG. 21) on the upper surface of the substrate W. ). Then, the SC-1 liquid film is formed over the entire jet region T1 disposed on the peripheral edge of the upper surface of the substrate W, and the droplet nozzle 5 is formed in the jet region T1 covered with the SC-1 liquid film. A lot of carbonated water droplets are sprayed from.

Further, as shown in FIG. 23B, the control device 8 rotates the substrate W at a constant rotation speed and discharges SC-1 from the third protective liquid nozzle 206 at a constant discharge flow rate, while moving the nozzle W 20, the droplet nozzle 5 is moved along the upper surface of the substrate W toward the center position Pc.
Thereafter, while droplets of carbonated water are ejected from the droplet nozzle 5 and SC-1 is discharged from the third protective liquid nozzle 206, as shown in FIG. 23C, the droplet nozzle 5 and the third protective liquid The nozzle 206 is moved toward the center position Pc. As a result, the position of the ejection region T1 is moved toward the rotation center C1 of the substrate W while being covered with the liquid film SC-1.

  Further, as the droplet nozzle 5 moves from the peripheral position Pe to the center position Pc, the control device 8 controls the nozzle changing mechanism 207 to move the third protective liquid nozzle 206 to the second position and posture ( It is gradually lowered from the first position and posture (see FIGS. 19 and 20) to the first position and posture (see FIGS. 21 and 22). In the second embodiment, the third protective liquid nozzle 206 is in the first position and posture (see FIGS. 19 and 20) and in the second position and posture (see FIGS. 21 and 22). In some cases, the postures are equal to each other, and are arranged so as to be shifted vertically, so that the third protective liquid nozzle 206 is moved from the second position and posture (see FIGS. 21 and 22) to the first position and In order to change the posture (see FIGS. 19 and 20), the third protective liquid nozzle 206 is lowered. The descending speed of the third protective liquid nozzle 206 is constant, and starts to descend when the droplet nozzle 5 leaves the peripheral position Pe, and ends when the droplet nozzle 5 reaches the center position Pc.

  As shown in FIG. 23D, when the droplet nozzle 5 reaches the center position Pc, the third protective liquid nozzle 206 is disposed at the first position and posture (see FIGS. 19 and 20). The SC-1 discharged from the third protective liquid nozzle 206 disposed at the first position and posture reaches the third liquid landing position P3 (see FIGS. 21 and 22) on the upper surface of the substrate W. . Then, the SC-1 liquid film is formed over the entire jet region T1 disposed on the peripheral edge of the upper surface of the substrate W, and the droplet nozzle 5 is formed in the jet region T1 covered with the SC-1 liquid film. A lot of carbonated water droplets are sprayed from.

  After the droplet nozzle 5 reaches the center position Pc, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Thereby, the droplet nozzle 5 is started to move from the center position Pc toward the peripheral position Pe. Thereafter, a droplet of carbonated water is ejected from the droplet nozzle 5, and the SC-1 is discharged from the second protective liquid nozzle 7, while the droplet nozzle 5 and the third protective liquid nozzle 206 are at the center position Pc. It is moved towards. Accordingly, the position of the injection region T1 is moved toward the periphery of the substrate W as shown in FIG. 24E while being covered with the SC-1 liquid film.

  In addition, as the droplet nozzle 5 moves from the center position Pc to the peripheral position Pe, the control device 8 controls the nozzle changing mechanism 207 to move the third protective liquid nozzle 206 to the first position and posture ( 19 and FIG. 20) is gradually raised to the second position and posture (see FIG. 21 and FIG. 22). The rising speed of the third protective liquid nozzle 206 is constant, and starts rising when the droplet nozzle 5 leaves the center position Pc, and ends when the droplet nozzle 5 reaches the peripheral position Pe.

Thereafter, as shown in FIG. 24F, when the droplet nozzle 5 reaches the peripheral position Pe, the control device 8 controls the rotation mechanism 22 to reverse the swing direction of the nozzle arm 21. Thereby, the droplet nozzle 5 is started to move from the peripheral position Pe toward the center position Pc.
When the reciprocating rocking motion of the nozzle arm 21 is performed a predetermined number of times, the control device 8 opens the discharge valve 16 and stops the ejection of droplets from the droplet nozzle 5. Further, the control device 8 closes the third protective liquid valve 226 in the open state, and stops the discharge of SC-1 from the third protective liquid nozzle 206.

  As described above, according to the second embodiment, when the position of the ejection region T1 is arranged at the center of the substrate W, the position of the third protective liquid nozzle 206 is changed to the first position and posture (FIG. 19 and FIG. (See FIG. 20). The first position and orientation (see FIGS. 19 and 20) are such that the protection liquid discharged from the third protection liquid nozzle 206 is in a state where the position of the injection region T1 is arranged at the center of the upper surface of the substrate W. The position is optimized so as to spread over the entire injection region T1. Therefore, even if the flow rate of the protective liquid supplied to the substrate W is small, the entire jet region T1 arranged in the upper surface inner peripheral region IR can be covered with the protective liquid film.

  Further, when the position of the ejection region T1 is arranged at the peripheral edge of the upper surface of the substrate W, the position of the third protective liquid nozzle 206 is controlled to the second position and posture (see FIGS. 21 and 22). The second position and posture (see FIGS. 21 and 22) are such that the protective liquid ejected from the third protective liquid nozzle 206 is ejected in a state where the position of the ejection region T1 is arranged on the upper surface periphery of the substrate W. The position is optimized so as to spread over the entire region T1. Therefore, even if the flow rate of the protective liquid supplied to the substrate W is small, the entire jet region T1 arranged in the upper surface outer peripheral region OR can be covered with the protective liquid film.

As a result, even if the position of the injection region T1 is arranged at any position on the upper surface of the substrate W, the entire region of the injection region T1 is covered with a liquid film of the protective liquid by supplying a small flow of the protective liquid to the substrate W. be able to. Thereby, damage to the substrate W can be suppressed without increasing the flow rate of the protective liquid supplied to the substrate W.
As mentioned above, although two embodiment of this invention was described, this invention can also be implemented with another form.

  In the second embodiment, the arrangement position of the third protective liquid nozzle 206 is vertically different between the first position and posture and the second position and posture, but the postures are made equal to each other. In order to change the third protective liquid nozzle 206 between the first position and posture and the second position and posture, the control device 8 controls the nozzle changing mechanism 207 to change the first protective liquid nozzle 206. The third protective liquid nozzle 206 was moved up and down. However, when the third protective liquid nozzle 206 differs not only in the arrangement position but also in the attitude between the first position and attitude and the second position and attitude, the control device 8 changes the nozzle. The posture of the third protective liquid nozzle 206 may be changed while the mechanism 207 is controlled to move the third protective liquid nozzle 206.

Further, only the posture may be changed between the first position and posture and the second position and posture under the control of the nozzle changing mechanism 207.
In the second embodiment, the case where the position and posture of the third protective liquid nozzle 206 are changed in parallel with the movement of the injection region T1 in the upper surface of the substrate W has been described. You may make it change the position and attitude | position of the droplet nozzle 5 so that the relative position and attitude | position with respect to the droplet nozzle 5 may change.

  Further, in the first embodiment, the standard for optimizing the position and posture of the first protective liquid nozzle 6 is set such that the position of the injection region T1 is arranged at the center of the upper surface of the substrate W, and the second The standard for optimizing the position and posture of the protective liquid nozzle 7 was set such that the position of the injection region T1 was arranged at the peripheral edge of the upper surface of the substrate W. However, the reference of the position and posture of the first protective liquid nozzle 6 may be set to a predetermined position in the upper surface inner peripheral region IR excluding the center portion of the upper surface, and the reference of the position and posture of the second protective liquid nozzle 7 may be used. The upper surface outer peripheral area OR excluding the center of the upper surface may be set at a predetermined position.

  In the second embodiment, the reference of the first position and posture of the third protective liquid nozzle 206 is set to a state in which the position of the injection region T1 is disposed at the center of the upper surface of the substrate W. The reference of the first position and posture of the protective liquid nozzle 206 was set to a state in which the position of the ejection region T1 is arranged at the peripheral edge of the upper surface of the substrate W. However, the first position and orientation reference may be set to a predetermined position of the upper surface inner peripheral region IR excluding the upper surface center portion, and the second position and orientation reference may be set to the upper surface outer periphery region OR excluding the upper surface center portion. The predetermined position may be used.

In the first and second embodiments described above, the case where the substrate processing apparatus 1,201 is an apparatus for processing a disk-shaped substrate such as a semiconductor wafer has been described. An apparatus for processing a polygonal substrate such as a glass substrate for a liquid crystal display device may be used.
In the two embodiments described above, the main body 36 of the droplet nozzle 5 is made of quartz because of its chemical resistance as described above. For example, droplets are ejected at a relatively high speed of about 20 to 60 m / sec. In this case, the treatment liquid flowing through the flow path is charged, so the droplets are also charged, and the straightness of the droplets is lost due to electrostatic force and the cleaning effect is reduced. Uniformity is lost and large droplets are formed. As a result of the droplets having large kinetic energy colliding with the substrate, the pattern collapses, or fine mist accompanying droplet discharge is attracted to the droplet nozzle 5 by electrostatic force. There are cases where inconveniences such as water droplets adhering to the outer wall, falling on the substrate or the apparatus and causing contamination may occur. This particularly occurs remarkably when pure water which is a nonconductor is used as the treatment liquid.

  This phenomenon can be reduced or solved by imparting conductivity to the inner wall of the treatment liquid or the droplet nozzle 5. For example, by using so-called carbonated water in which carbon dioxide gas is dissolved in pure water, SC-1, SC-2, or other electrolyte solution as the treatment liquid, inconvenience due to droplet charging can be reduced. According to the experiments by the present inventors, for example, in the case of carbonated water, there was an effect of reducing damage to the substrate at a specific resistance of 3 MΩ · cm or less, and an improvement in the particle removal rate was seen at a specific resistance of 1 MΩ · cm or less. Alternatively, the inner wall of the quartz body 36 of the droplet nozzle 5 is coated with a conductor such as gold or silver to ground the conductor, or a conductor rod or the like is inserted into the flow path. This inconvenience can be reduced or solved by grounding the conductor.

  In addition, various design changes can be made within the scope of matters described in the claims.

1. Substrate processing apparatus 2. Spin chuck (substrate holding means)
5 droplet nozzle 6 first protective liquid nozzle 7 second protective liquid nozzle 8 control device (discharge control means, position and orientation control means)
10 Spin motor (rotating means)
20 Nozzle moving mechanism (nozzle moving means)
25 1st protective liquid supply pipe 26 1st protective liquid valve 28 2nd protective liquid supply pipe 29 1st protective liquid valve 201 Substrate processing device 206 3rd protective liquid nozzle C1 Rotating axis IR Upper surface inner peripheral area ( (Area around the center of the top surface)
OR Upper surface outer peripheral region (peripheral region of the upper surface periphery)
P1 First landing position P2 Second landing position P3 Third landing position P4 Fourth landing position T1 Injection region W Substrate θH1 Angle (incident angle)
θH2 angle (incident angle)
θH3 angle (incident angle)
θH4 angle (incident angle)
θV1 angle (incident angle)
θV2 angle (incident angle)
θV3 angle (incident angle)
θV4 angle (incident angle)

Claims (13)

Substrate holding means for holding the substrate horizontally;
A rotating means for rotating the substrate held by the substrate holding means around a vertical rotation axis;
A droplet nozzle for generating droplets of the processing liquid sprayed on the spray region in the upper surface of the substrate held by the substrate holding means;
In a state where a protective liquid is discharged on the upper surface of the substrate, a liquid film of the protective liquid is formed on the upper surface of the substrate, and the position of the ejection region is covered by the liquid film of the protective liquid, A protective liquid nozzle for causing droplets to collide with the ejection area;
The droplet nozzle while maintaining the positional relationship between the droplet nozzle and the protective liquid nozzle constant so that the position of the ejection region moves between the center of the upper surface of the substrate and the peripheral edge of the upper surface of the substrate. And nozzle moving means for moving the protective liquid nozzle,
According to the position of the jet region in the upper surface of the substrate, the protective liquid from the protective liquid nozzle is deposited on the upper surface of the substrate, the liquid landing position relative to the droplet nozzle, and the protective liquid nozzle Change control means for changing and controlling at least one of the relative incident angles with respect to the droplet nozzle when the discharged protective liquid enters the liquid landing position;
The change control means controls the liquid landing position and the incident angle to the first state when the position of the ejection region is arranged at the center of the upper surface of the substrate, and the position of the ejection region is the substrate. A substrate processing apparatus that controls the liquid landing position and the incident angle to a second state different from the first state. The first state is a state where the protective liquid discharged from the protective liquid nozzle is spread over the entire injection area in a state where the position of the injection area is arranged at the center of the upper surface of the substrate. And
The second state is a state in which the protective liquid discharged from the protective liquid nozzle is set to spread over the entire spray area in a state where the position of the spray area is arranged on the upper surface peripheral edge of the substrate. The substrate processing apparatus according to claim 1, wherein The protective liquid nozzle includes a first protective liquid nozzle and a second protective liquid nozzle,
The relative position and posture of the first protective liquid nozzle with respect to the droplet nozzle are such that the ejection region is discharged from the first protective liquid nozzle in a state where the position of the ejection region is located at the center of the upper surface of the substrate. Is set so that the protective liquid to be spread over the entire jet region,
The relative position and posture of the second protective liquid nozzle with respect to the droplet nozzle are discharged from the second protective liquid nozzle in a state where the position of the ejection region is arranged on the peripheral edge of the upper surface of the substrate. Is set so that the protective liquid to be spread over the entire jet region,
The change control means protects only the first protective liquid nozzle without discharging the protective liquid from the second protective liquid nozzle when the position of the ejection region is arranged at the center of the upper surface of the substrate. When the liquid is ejected and the position of the spray region is arranged on the peripheral edge of the upper surface of the substrate, the protective liquid is discharged only from the second protective liquid nozzle without discharging the protective liquid from the first protective liquid nozzle. The substrate processing apparatus according to claim 1, further comprising a discharge control unit that discharges water.   The discharge control means protects from the second protective liquid nozzle in a protective liquid discharge state in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. The discharge of the liquid is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started in synchronization with the stop of the discharge from the second protective liquid nozzle, and the center of the upper surface of the substrate at the position of the injection region In parallel with the movement from the first portion to the upper peripheral edge of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped and the discharge from the first protective liquid nozzle The substrate processing apparatus according to claim 3, wherein discharge of the protective liquid from the second protective liquid nozzle is started in synchronization with the stop.   The discharge control means protects from the second protective liquid nozzle in a protective liquid discharge state in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. The discharge of the liquid is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started prior to the stop of the discharge from the second protective liquid nozzle, and the central portion of the upper surface of the substrate at the position of the ejection region In parallel with the movement from the first protective liquid nozzle to the upper surface peripheral edge of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped and the discharge from the first protective liquid nozzle is stopped. The substrate processing apparatus according to claim 3, wherein discharge of the protective liquid from the second protective liquid nozzle is started prior to the step. A first protective liquid supply pipe for supplying a protective liquid to the first protective liquid nozzle;
A first protective liquid valve interposed in the first protective liquid supply pipe for switching supply / stop of supply of the protective liquid to the first protective liquid nozzle;
A second protective liquid supply pipe for supplying a protective liquid to the second protective liquid nozzle;
A second protective liquid valve interposed in the second protective liquid supply pipe for switching the supply / stop of supply of the protective liquid to the second protective liquid nozzle;
The discharge control means closes the second protective liquid valve in the open state in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate, and Prior to the closing of the protective liquid valve 2, the first protective liquid valve is opened, and in parallel with the movement of the position of the injection region from the center of the upper surface of the substrate to the peripheral edge of the upper surface of the substrate. The substrate processing apparatus according to claim 5, wherein the first protective liquid valve is closed and the second protective liquid valve is opened prior to closing the first protective liquid valve. The protective liquid nozzle is a single protective liquid nozzle;
When the position of the ejection region is arranged at the center of the upper surface of the substrate, the change control means determines the relative position and posture of the protective liquid nozzle with respect to the droplet nozzle, and the position of the ejection region is the The protective liquid discharged from the protective liquid nozzle is controlled to a first position and posture so as to spread over the entire area of the ejection area in a state of being arranged at the center of the upper surface of the substrate, and the position of the ejection area is When disposed on the peripheral edge of the upper surface of the substrate, the relative position and orientation of the protective liquid nozzle with respect to the droplet nozzle, with the position of the ejection region being disposed on the peripheral edge of the upper surface of the substrate, The position and orientation control means for controlling to a second position and orientation in which the protective liquid discharged from the protective liquid nozzle spreads over the entire jet region. The substrate processing apparatus. A substrate holding step for holding the substrate horizontally;
A rotating step of rotating the held substrate around a vertical rotation axis;
A droplet supply step of spraying a droplet of a processing liquid from a droplet nozzle onto a spray region in the upper surface of the held substrate;
A protective liquid is discharged from the protective liquid nozzle onto the upper surface of the substrate, a liquid film of the protective liquid is formed on the upper surface of the held substrate, and the position of the ejection region is covered with the liquid film of the protective liquid Colliding the treatment liquid droplets against the ejection region in a state;
The droplet nozzle while maintaining the positional relationship between the droplet nozzle and the protective liquid nozzle constant so that the position of the ejection region moves between the center of the upper surface of the substrate and the peripheral edge of the upper surface of the substrate. And a nozzle moving step for moving the protective liquid nozzle,
In parallel with the nozzle movement step, the protective liquid from the protective liquid nozzle is deposited on the upper surface of the substrate in accordance with the position of the ejection region in the upper surface of the substrate, and the liquid nozzle is relatively attached to the droplet nozzle. A change step of changing at least one of a liquid position and a relative incident angle with respect to the droplet nozzle when the protective liquid discharged from the protective liquid nozzle enters the liquid landing position, and
In the changing step, when the position of the spray region is disposed at the center of the upper surface of the substrate, the liquid landing position and the incident angle are set to the first state, and the position of the spray region is the upper peripheral edge of the substrate. The substrate processing method, wherein the liquid landing position and the incident angle are set to a second state different from the first state when arranged in a part.   The first state is a state where the protective liquid discharged from the protective liquid nozzle is spread over the entire injection area in a state where the position of the injection area is arranged at the center of the upper surface of the substrate. And the second state is set such that the protective liquid discharged from the protective liquid nozzle is spread over the entire spray area in a state where the position of the spray area is arranged on the peripheral edge of the upper surface of the substrate. The substrate processing method according to claim 8, wherein the substrate processing method is in a finished state. The protective liquid nozzle includes a first protective liquid nozzle and a second protective liquid nozzle,
The relative position and posture of the first protective liquid nozzle with respect to the droplet nozzle are such that the ejection region is discharged from the first protective liquid nozzle in a state where the position of the ejection region is located at the center of the upper surface of the substrate. Is set so that the protective liquid to be spread over the entire jet region,
The relative position and posture of the second protective liquid nozzle with respect to the droplet nozzle are discharged from the second protective liquid nozzle in a state where the position of the ejection region is arranged on the peripheral edge of the upper surface of the substrate. Is set so that the protective liquid to be spread over the entire jet region,
In the changing step, when the position of the ejection region is arranged at the center of the upper surface of the substrate, the protective liquid is discharged only from the first protective liquid nozzle without discharging the protective liquid from the second protective liquid nozzle. When the position of the spray region is arranged at the peripheral edge of the upper surface of the substrate, the protective liquid is discharged only from the second protective liquid nozzle without discharging the protective liquid from the first protective liquid nozzle. The substrate processing method of Claim 8 or 9 including the discharge switching process to discharge.   In the discharge switching step, the protection from the second protective liquid nozzle in a protective liquid discharge state is performed in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. The discharge of the liquid is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started in synchronization with the stop of the discharge from the second protective liquid nozzle, and the center of the upper surface of the substrate at the position of the injection region In parallel with the movement from the first portion to the upper peripheral edge of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped and the discharge from the first protective liquid nozzle The substrate processing method according to claim 10, wherein discharge of the protective liquid from the second protective liquid nozzle is started in synchronization with the stop.   In the discharge switching step, the protection from the second protective liquid nozzle in a protective liquid discharge state is performed in parallel with the movement of the position of the ejection region from the peripheral edge of the upper surface of the substrate to the center of the upper surface of the substrate. The discharge of the liquid is stopped, and the discharge of the protective liquid from the first protective liquid nozzle is started prior to the stop of the discharge from the second protective liquid nozzle, and the central portion of the upper surface of the substrate at the position of the ejection region In parallel with the movement from the first protective liquid nozzle to the upper surface peripheral edge of the substrate, the discharge of the protective liquid from the first protective liquid nozzle in the protective liquid discharge state is stopped and the discharge from the first protective liquid nozzle is stopped. The substrate processing method according to claim 10, wherein discharge of the protective liquid from the second protective liquid nozzle is started prior to the step. The protective liquid nozzle is a single protective liquid nozzle;
In the changing step, when the position of the ejection region is arranged at the center of the upper surface of the substrate, the position and the posture of the protective liquid nozzle with respect to the droplet nozzle are changed, and the position of the ejection region is the center of the upper surface of the substrate. In a state where the protective liquid discharged from the protective liquid nozzle is spread over the entire area of the spray area, and the position of the spray area is the periphery of the upper surface of the substrate When the protective liquid nozzle is disposed on the substrate, the position and posture of the protective liquid nozzle with respect to the droplet nozzle are discharged from the protective liquid nozzle in a state where the position of the ejection region is disposed on the peripheral edge of the upper surface of the substrate. 10. The substrate processing method according to claim 8, further comprising a position / orientation changing step of changing to a second position and orientation so that the protective liquid spreads over the entire jet region.

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