JP2014167930A - Luminaire using organic electroluminescent element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a high-efficiency organic EL lighting device.SOLUTION: Provided is an organic electroluminescent lighting device comprising a transparent substrate and a light-emitting unit held between a first electrode provided at a position close to the transparent substrate and a second electrode provided at a position far from the transparent substrate, with an organic layer provided on the surface on the second electrode side of the first electrode. The first electrode is provided with a metal electrode layer 101, and has a plurality of openings 103 through which the metal electrode layer penetrates. A metal portion 102 of the metal electrode layer between two given points is continuous without a break; the diameter of the openings is in the range 10 nm to 780 nm inclusive; the film thickness of the metal electrode layer is in the range 10 nm to 200 nm inclusive; the openings are arranged at random in the metal electrode layer; and, when the distribution of array periods of the openings is represented by a radial distribution curve, the half-value width of the curve is in the range 5 to 300 nm.

Description

  The present invention relates to an illumination device using a highly efficient organic electroluminescence element (hereinafter referred to as an organic EL element).

  An organic EL element is a light emitting device that emits light by injecting electrons and holes into an organic thin film. The organic EL element is characterized by high contrast because it emits light and has a very thin light emitting portion. For this reason, use as a thin flat display device or a thin flat illumination device has been studied. These can be applied to mobile phones, flat-screen TVs, home lighting fixtures, and the like.

  A transparent electrode is used as the anode-side electrode of the organic EL element, and usually an indium tin oxide (hereinafter referred to as ITO) film in which tin is added to indium oxide as a dopant is used. This electrode needs to have conductivity as an electrode and also have optical transparency to light emitted from the light emitting layer.

In a display device using an organic EL element (hereinafter referred to as an organic EL display), a top emission type element in which a TFT (Thin Film Transistor) array is formed on a substrate side opposite to a light emitting surface in order to enlarge a pixel region. A structure is preferred.
In the top emission type element structure, the light emitting surface side upper electrode needs to transmit light.
In a normal display device, ITO is generally used as a light transmissive electrode. However, in the top emission type organic EL element, it is necessary to form the light emitting surface side upper electrode after forming the organic light emitting layer in the manufacturing process. For this reason, it is difficult to use sputtered film formation or ITO that requires a high temperature process.

  In addition, a lighting device using an organic EL element (hereinafter referred to as an organic EL lighting device) is required to be thin and have a larger area. Here, when an ITO film generally used as a light transmitting electrode is used, it is difficult to uniformly emit light over the entire surface. This is because the resistivity of the ITO film is 100 times greater than that of a normal metal electrode, so that the in-plane resistance increases when the area is increased.

Furthermore, indium as a raw material for the ITO film is a rare metal, and its future depletion is a problem. For this reason, there is a concern that it will be difficult to procure materials in the future.
In order to solve the problems related to the ITO film, it has been studied to use a metal thin film as a light transmissive electrode.

  For organic EL displays, it is a common practice to use ultra-thin translucent metal electrodes of several nanometers to several tens of nanometers, such as by vacuum vapor deposition with little process damage to the organic light emitting layer. However, when a translucent metal electrode is used, there is a problem that the light transmittance is greatly reduced and the luminance of the organic EL display is remarkably lowered. Therefore, in order to obtain high luminance light emission, it is necessary to increase the element driving voltage, and the device life is significantly reduced due to heat generation. In addition, when the display has a large area, it is difficult to uniformly form an ultrathin translucent metal electrode, so that the process margin in the upper electrode formation process is reduced, and the yield is reduced in mass production. .

  In addition, regarding the organic EL lighting device, it is difficult to form a semi-transparent metal electrode uniformly when the light emitting surface is enlarged, and the film thickness is set to maintain the conductivity at a sufficiently high level. If the thickness is increased, the light transmittance is lowered.

  As described above, it is difficult for the ITO film and the metal thin film that have been conventionally used as the light transmissive electrode to achieve both the light transmissive property and the conductive property at a high level.

In order to solve such a dilemma, attempts have been made to lower the resistance of the ITO film. For example, in Patent Document 1, a metal mesh electrode having a structure having a thickness of 15 μm or less, a line width of 25 μm or less, and an opening of 50 μm to 2.5 mm is prepared on a transparent substrate, and a transparent resin film is filled in the opening part. A technique for forming an ITO film on the entire upper surface of the substrate is disclosed. However, even in such a method, the metal mesh electrode part only plays an auxiliary role of the ITO film, and it cannot be said that the above problem has been essentially solved.
JP 2005-332705 A JP-A-2005-279807 US Pat. No. 6,565,763 RIKEN Dictionary 5th edition, published by Iwanami Shoten C. Harrison, et. al. , Physical Review E, 66, 011706 (2002)

  The present invention intends to provide an organic EL lighting device that achieves both high light transmittance and high conductivity in a light transmissive electrode and is highly efficient.

Moreover, the organic electroluminescence lighting device according to the embodiment of the present invention includes a “transparent substrate, a first electrode provided at a position close to the transparent substrate, and a second electrode provided at a position far from the transparent substrate. And an organic electroluminescence lighting device comprising an organic layer on the second electrode side surface of the first electrode,
The first electrode comprises a metal electrode layer;
The metal electrode layer has a plurality of openings therethrough;
Between any two points of the metal part of the metal electrode layer is continuous,
The opening diameter is in the range of 10 nm to 780 nm;
The thickness of the metal electrode layer is in the range of 10 nm to 200 nm,
The openings are randomly arranged in the metal electrode layer;
When the distribution of the arrangement period of the openings is represented by a radial distribution curve, the half-value width is in the range of 5 to 300 nm ”.

An organic electroluminescence lighting device according to an embodiment of the present invention includes a “transparent substrate, a first electrode provided at a position close to the transparent substrate, and a second electrode provided at a position far from the transparent substrate. An organic electroluminescence lighting device comprising a light emitting part sandwiched between and having an organic layer on the second electrode side surface of the first electrode,
The first electrode comprises a metal electrode layer;
The metal electrode layer has a plurality of openings therethrough;
Between any two points of the metal part of the metal electrode layer is continuous,
In the metal electrode layer, the portion where the linear distance of the continuous metal portion that is not obstructed by the opening is 1/3 or less of the wavelength of the visible light region wavelength 380 nm to 780 nm to be used is 90% or more of the total area. ,
The average opening diameter is in the range of 10 nm or more and 1/3 or less of the wavelength of the light,
The center-to-center pitch of the openings is in the range of not less than the average opening diameter and not more than 1/2 of the wavelength of the light,
The thickness of the metal electrode layer is in the range of 10 nm to 200 nm,
The openings are randomly arranged in the metal electrode layer ”.

  According to the aspects of the present invention, a highly efficient organic EL display and organic EL lighting device are provided. These lighting devices have excellent characteristics such as high luminance, long life, and no luminance unevenness. These lighting devices can be suitably used for video display devices such as flat-screen TVs and mobile phones, indoor certification, and the like.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

Light-transmissive metal electrode First, the light-transmissive metal electrode used in the present invention will be described as follows.

The response when light is irradiated onto a substance, particularly a metal, will be described from the principle. In Drude's theory that describes free-electron polarization by electrons, assuming that the average free-electron scattering time is sufficiently smaller than the light oscillation period, the dielectric function ε (ω) can be described as follows: Is done.
ε (ω) = ε _b (ω) −ωp ² / ω ² (1)
In this case, ωp ² = ne ² / m * × ε ₀ is the plasma frequency of the conduction electrons, n is the carrier density, e is the charge, m * is the effective mass, and ε ₀ is the dielectric constant of the vacuum. The first term of equation (1) is the contribution of a metal dipole, which is close to 1 here. The second term is a contribution from conduction electrons.

That is, the plasma frequency is a function of the carrier density n. Here, when ω ₀ > ω, the dielectric function ε (ω) has a negative value, and the light irradiated to the substance is reflected by plasma. On the other hand, when ω> ω ₀ , the dielectric function ε (ω) has a positive value and transmits light. Accordingly, the plasma frequency can be considered as a reflection and transmission threshold when responding to the light of a substance.
In a typical metal, the plasma frequency is in the ultraviolet region, so visible light is reflected. For example, in Ag, the carrier density is n = 6.9 × 10 ²² [cm ⁻³ ], and the wavelength corresponding to the plasma frequency is in the ultraviolet region of about 130 nm.

  On the other hand, when considering ITO generally used for organic EL elements, the wavelength corresponding to the plasma frequency is in the infrared region. Since the carrier density is proportional to the electrical conductivity and inversely proportional to the resistivity, adding a dopant to lower the resistivity leads to an increase in plasma frequency. Therefore, if the amount of dopant added is increased, plasma reflection occurs from a certain value on the long wavelength side of visible light, and the transmittance decreases.

As described above, in order to ensure the transmittance in the visible light region, the wavelength corresponding to the plasma frequency must be in the infrared region, and the upper limit of the carrier density is defined by this principle. For these reasons, the carrier density of ITO that is generally used is about n = 1 × 10 ²¹ [cm ⁻³ ], which is one tenth of the metal. The lower limit of the resistivity calculated from this value is about 100 μΩ · cm, and it is theoretically difficult to lower the resistivity any more. As described above, in the oxide semiconductor-based light transmission electrode represented by ITO, there is a lower limit in resistivity from the principle point of view.

  One embodiment of the light-transmitting metal electrode used in the present invention is as shown in FIG. 1A is a perspective view of the metal electrode layer 101, and FIG. 1B is an elevation view of the metal electrode layer 101. In the present invention, the light-transmitting metal electrode includes a metal electrode layer having a fine opening 103. The metal electrode layer has a metal portion 102 and a fine opening 103 that penetrates the metal portion. The metal electrode layer functions as an electrode and can transmit light having a wavelength in the visible region.

  The light-transmitting metal electrode used in the present invention has a light transmittance that is higher than expected from the total area of the openings provided in the metal portion 102, in other words, the metal portion 103 is inherently It has a great feature in reducing the reflection property and transmitting light.

  The metal electrode layer having optical transparency has an opening diameter of 10 nm or more and 780 nm or less, and when the arrangement distribution of the opening is represented by a radial distribution curve, the half width is in the range of 5 to 300 nm. In order to have optical transparency while being a metal, there are roughly the following two principles.

The first principle is that when an electrode is irradiated with light, the movement of free electrons induced by the electric field of the light is hindered and the light becomes transparent. The second principle is that since the opening diameter of the opening provided in the metal electrode is smaller than the wavelength of light, the influence of Rayleigh scattering and diffraction is reduced, and the straightness of light is maintained.
Here, the “wavelength of light” refers to the wavelength of light incident on the electrode when the metal electrode having light transmittance is used. Therefore, this wavelength can vary over a wide range, but is generally selected from the visible region, specifically from 380 to 780 nm.

  First, the first principle will be described. In the Drude theory described above, it is assumed that the target substance is sufficiently large with respect to the wavelength of the irradiated light and has a uniform structure. When the movement of free electrons in a substance is described when the substance is irradiated with light having a frequency lower than the plasma frequency, the electric field of the light causes polarization of electrons in the substance. This polarization is induced in a direction that cancels the electric field of light. By this induced polarization of electrons, the electric field of light is shielded, so that light cannot pass through the substance, and so-called plasma reflection occurs. Here, if the substance that induces the polarization of electrons is smaller than the wavelength of light, the movement of electrons is limited by the geometric structure, and it is considered that the electric field of light cannot be shielded. .

  As described above, by considering the response of a substance to light from the viewpoint of inhibition of free electron motion by a fine structure, a structure that isotropically transmits an electric field of light as shown in FIG. 1 has been proposed. The present inventors have conducted intensive research on such a structure to provide an opening in the electrode film, the opening diameter is not less than 10 nm and not more than 780 nm, and the distribution of the openings is represented by a radial distribution curve. Then, it was found that when the half width is in the range of 5 to 300 nm, the entire electrode transmits polarized light in all directions. On the other hand, between any two points of the metal part is continuous, in other words, since the metal part is continuous as a whole surface, the function as an electrode is maintained, and the resistivity is also the volume of the opening. Conductivity remains relatively high because it only decreases according to the ratio.

  Conventionally, it has been very difficult to produce the above-described structure completely uniformly over the entire metal thin film. However, the inventors have an opening diameter of 10 nm or more and 780 nm or less, and when the arrangement distribution of openings is represented by a radial distribution curve, the half value width is in the range of 5 to 300 nm. It has been found that the transparency to certain light is not impaired.

  In order to analyze that the structure is formed in the metal electrode layer thin film, the following method is exemplified. Fourier transform is performed on the electron microscope image or atomic force microscope image of the corresponding metal thin film surface, and the correlation wavelength is plotted on the horizontal axis and the correlation function is plotted on the vertical axis. The correlation function on the vertical axis indicates the periodicity of a continuous structure, that is, how many structures having a certain wavelength as a repeating unit among the structures included in the image.

  Next, the second principle, that is, the reduction of the influence of light scattering and the maintenance of straightness of light by avoiding the diffraction effect will be described.

  The transparent metal electrode of the present invention is intended to reduce the influence of light scattering and to improve the efficiency of light straightness. To define the surface structure, it is necessary to treat the magnitude of light reaction as a parameter. There is. For this purpose, when describing the aperture diameter, the radius of rotation of the structure of the aperture is optimal, and by defining the shape of the aperture by the radius of rotation of the structure, the efficiency of light straightness is maximized. The idea is that it can be expressed appropriately. That is, the radius of the opening of the surface structure of the present invention is defined by the rotation radius, and the opening diameter is twice that. Various different shapes can be equally operated as long as the radii of rotation are equal. The definition of the turning radius is described in Non-Patent Document 1, for example.

  In the present invention, the radius of rotation of the opening is defined as follows. That is, a circumferential line is drawn at equal intervals from the end with respect to the surface having the opening. Specifically, from the concavo-convex image obtained with an atomic force microscope, the line is drawn circumferentially at equal intervals from the end. This portion is image-processed, and the center of gravity is further determined. The rotation radius is calculated by converting the distance from the center of gravity to the recess and taking the moment, and is defined as R. The rotation radius of these structures can also be obtained by Fourier transform of an electron microscope image or an atomic force microscope image.

  In the surface structure that causes light scattering, the larger the size of the surface structure, the greater the influence on the light, and the effect is proportional to the square of the size. Therefore, the average rotation radius <R> of the opening is preferably 1/6 or less of the wavelength of the corresponding incident light, that is, the opening diameter is preferably 1/3 or less of the incident light wavelength. The shape of the opening is not particularly limited. For example, a cylindrical shape, a conical shape, a triangular pyramid shape, a quadrangular pyramid shape, and any other cylindrical shape or weight shape, or a mixture thereof may be used. In addition, the effect of the present invention is not lost even if the light transmissive metal electrode used in the present invention includes openings of various sizes. Rather, it is preferable that the sizes of the openings vary, since the linear distance between successive metal parts tends to be longer. In this way, when the size of the opening is not constant, the diameter of the opening can be displayed as an average value.

Next, diffraction will be described. In the light transmissive metal electrode used in the present invention, when light entering the metal electrode direction from the organic EL layer side and passing through the metal electrode is considered, the conditions under which diffraction occurs according to the scalar theory are expressed as follows. .
nmsin θm−ni × sin θi = m × λ / d (2)
Here, θm is an emission angle from the metal electrode, θi is an incident angle from the organic EL layer side, λ is a wavelength of incident light, d is an interval of the diffraction grating, m is a diffraction order, and an integer (m = 0, ± 1, ± 2,..., And ni and nm are the refractive indices of the organic EL layer and the medium outside the metal electrode, such as a transparent substrate, respectively. Therefore, the condition in which diffraction does not occur is a condition in which Equation (2) has no solution when m = −1 which is the lowest diffraction order. Solving this, λ / ni <1, and the value obtained by dividing the wavelength of the incident light by the refractive index of the transparent substrate is the threshold for preventing diffraction.
The refractive index of a generally used organic EL layer does not exceed 2. Therefore, if the pitch between the openings in the present invention is generally ½ or less of the incident wavelength, it is preferable because the influence of diffraction can be avoided.

  The relative positions of the openings are formed from a plurality of microdomains adjacent to each other in the plane, and the openings arranged in each of the microdomains are periodically arranged, and each of the microdomains is arranged. It is preferable that the domains are arranged so that the arrangement directions of the respective openings are random, or are arranged at random. The reason for this is that, from the first principle, if a hexagonal symmetrical structure with long-range periodicity is taken, there will be a continuous metal continuous part in the three-axis direction that takes the periodic structure, and the movement of free electrons This is because it cannot be isotropically inhibited. By arranging the opening as a microdomain structure or a random structure, the movement of free electrons can be effectively inhibited.

  There are the following methods for analyzing the relative position of the opening. For example, an electron microscope image or an atomic force microscope image of a metal thin film having an opening is two-dimensionally Fourier transformed to obtain a so-called reciprocal space image. If the relative position of the opening has periodicity, a clear spot appears in the reciprocal space image. On the other hand, if the relative position of the opening is isotropic, the reciprocal space image is a ring.

  Next, a method for producing the above light transmissive metal electrode will be described. When an opening is produced using an existing EB drawing apparatus or exposure apparatus, a long-period structure having a regular arrangement is easy to produce, but it is difficult to create a structure in which openings are randomly arranged. On the other hand, in this embodiment, the phase separation shape of the block polymer used as the template for forming the opening is isotropic with the relative position of the opening being random, and the light-transmitting metal electrode used in the present invention Suitable for manufacturing.

  The following discussion was obtained as a result of actually manufacturing a metal electrode having a fine opening and measuring a prototype. In the electrode, it is preferable that a linear distance between continuous metal parts not obstructed by the opening is 1/3 or less of the wavelength of the light. However, from the viewpoint of microfabrication technology, the average opening diameter is preferably 10 nm or more, and below this, it tends to be difficult to uniformly and accurately produce a metal electrode having excellent light transmission properties. It is in.

  The light-transmitting metal electrode having these openings was produced by depositing aluminum and lifting off the block polymer template using a block copolymer thin film as a template for formation. In this method, it is possible to create an opening pattern having a large area and 100 nm or less, which has not been possible with light or electron beam lithography. Of course, even if a similar structure is produced in the future by progress of photolithography or electron beam lithography, the function as a metal electrode having light transmittance is the same.

  In this embodiment, a diblock copolymer mainly composed of a combination of an aromatic ring polymer and an acrylic polymer is used. However, the combination is not limited to these as long as one of the blocks constituting the diblock polymer can be selectively removed as described later.

  The reason why a diblock copolymer of a combination of an aromatic ring polymer and an acrylic polymer is used in this embodiment is that there is a large difference in dry etching resistance between the two types of polymers. This principle is disclosed in Patent Document 3. Examples of the aromatic ring polymer include polystyrene, polyvinyl naphthalene, polyhydroxystyrene, and derivatives thereof. Examples of the acrylic polymer include alkyl methacrylates such as polymethyl methacrylate, polybutyl methacrylate, and polyhexyl methacrylate, polyphenyl methacrylate, polycyclohexyl methacrylate, and the like, and derivatives thereof are included. Moreover, the same property is shown even if acrylate is used instead of these methacrylates. Among these, a diblock copolymer of polystyrene and polymethyl methacrylate is excellent from the viewpoint of dry etching resistance.

  To be used as a template in one of the fabrication methods of the present invention, the block polymer must have nanoscale dot-like domains that are sufficiently self-assembled. Therefore, a composition having a dot-like structure as the phase separation shape of the block copolymer is optimal for the purpose of the present invention.

  Self-assembled block polymers are not necessarily phase-separated naturally. Short-distance patterns are oriented in the same direction to form grains. It has been found from past research that the grain size increases with time by thermal annealing above the glass transition temperature of the block copolymer, and that this rate grows in proportion to the 1/4 power of time. (Non-Patent Document 2). This means that annealing for several hours is sufficient for the oriented grains to grow to the order of microns.

  The inventors have found a method for obtaining a phase-separated shape of a block copolymer having a dot-like structure with a period of 50 to 70 nm. This phase-separated dot pattern is transferred to the substrate by a method described later. By vapor-depositing a metal electrode on the transferred structure and removing the pattern transfer site, it can be used as a light-transmissive metal electrode that can be used for an organic EL element.

  In addition, the method for producing a light-transmissive metal electrode of the present invention may employ a production method using a single particle layer of silica fine particles having a structure in which the arrangement of a plurality of microdomains is independent from each other as an etching mask. it can.

  First, a substrate is prepared, and an organic polymer layer (resist layer) is applied thereon with a thickness of 50 to 150 nm as necessary. The organic polymer layer is preferably used for improving the aspect ratio of the mask pattern when the substrate is etched.

  Next, the organic polymer layer is coated on the organic polymer layer with a thickness of 20 to 50 nm as necessary. This organic polymer layer serves as a trap layer for capturing only the single particle film from the multilayer film formed when the silica fine particle dispersion is applied.

  A dispersion liquid containing silica fine particles having a specific particle size distribution is spin-coated on the substrate. Silica fine particles attempt to form a self-organized close-packed multilayer film. However, at this time, the close-packed structure cannot be taken completely, and a “gap” is generated in part. This constitutes the final microdomain boundary, that is, the grain boundary. Then, by heating the substrate, only the lowermost layer of the silica fine particle surface layer is sunk and sinks into the organic polymer layer. Therefore, when cooled to room temperature, only the lowermost silica particles are captured by the substrate by the organic polymer layer. Therefore, when the substrate is washed with ultrasonic waves or the like, the silica fine particles are removed leaving only the lowermost layer, and a base material before etching is obtained.

Substrate is subjected to etching using CF _4. By this etching, the silica fine particles are reduced in size by etching, and the gaps between the particles are widened. The purpose of this etching with CF ₄ is to reduce the particle size of silica particles to a desired size for forming an opening. For this reason, it is preferable to etch the organic polymer layer under conditions that are difficult to etch. After the silica fine particles have a desired particle diameter, they are subjected to O ₂ -RIE to form a dot pattern on the substrate. A metal electrode layer is deposited on this pattern.
As a method for depositing the metal, for example, vapor deposition can be used. After the deposition, for example, when the polymer is removed by ultrasonic cleaning or the like, a metal electrode structure having optical transparency is completed.

In addition, after performing the process of arranging the silica fine particles to form a single particle film and reducing the particle size, the monomolecular film of the silica fine particles is transferred to the organic polymer layer (resist layer) and then etched. The pattern can also be formed by performing.
Furthermore, a pattern master is produced by the process before depositing metal by any of the methods described above, and the pattern is transferred by nanoimprinting using it as a stamper, and the metal is deposited on the transferred pattern. A metal electrode having optical transparency can also be produced. According to such a method, since a relatively complicated etching process can be omitted, an efficient electrode can be manufactured.

In the present invention, the metal constituting the electrode is preferably made of a material having a plasma frequency higher than the frequency of light incident on the light-transmitting metal electrode from the viewpoint of light transmittance.
Moreover, in order to achieve high efficiency as an organic EL element, an element having as low a resistivity as possible is preferable. From the above viewpoint, it is preferable to use a metal selected from the group consisting of aluminum, gold, silver, copper, indium, magnesium, lithium, scandium, calcium, nickel, cobalt, and platinum.

Organic EL Display The structure of a top emission type organic EL display of an active matrix driving system according to an embodiment of the present invention is illustrated in FIG. FIG. 2 shows a typical example for helping understanding of the embodiment of the present invention, and it goes without saying that the organic EL display according to the embodiment of the present invention is not limited to the illustrated structure. .

  The organic EL display illustrated in FIG. 2 is a top emission type display having a light emitting surface on the side opposite to the substrate 201. Therefore, the substrate 201 does not need to be transparent and is not particularly limited as long as it functions as a pixel portion support, and a glass substrate, a Si substrate, a plastic substrate, or the like can be used. In particular, it is particularly preferable to use a glass substrate capable of increasing the display size.

  A pixel driving circuit 202 such as a video signal driving circuit and a scanning signal driving circuit is disposed on the outer periphery of the substrate 201. On the substrate 201, a plurality of pixels 203 connected to the pixel driving circuit unit 202 are arranged in a matrix. The pixel 203 includes, for example, a child control circuit connected in series between a pair of power supply terminals, an output switch, a pixel switch, and at least one organic layer sandwiched between the first electrode and the second electrode. It has a light emitting part. The element control circuit has a control terminal connected to a video signal line via a pixel switch, and has a size corresponding to a video signal supplied from the video signal line driving circuit via the video signal line and the pixel switch. The current is output to the light emitting unit via the output switch. The pixel switch has a control terminal connected to the scanning signal line, and ON / OFF is controlled by a scanning signal supplied from the scanning signal line driving circuit via the scanning signal line. Further, the control terminal of the output switch is connected to the scanning signal line, and ON / OFF is controlled by the scanning signal supplied from the scanning signal line driving circuit via the scanning signal line. Note that the above-described display structure is a typical example for understanding the present invention, and it goes without saying that the present invention is not limited thereto. Other structures can be employed.

Next, the pixel 203 will be described with reference to FIG. FIG. 2 shows a typical cross-sectional view of each pixel 3, and it goes without saying that the structure of the present invention is not limited to this.
On the substrate 201, for example, a base layer 204 in which SiN _x , SiO _x, or the like is laminated can be provided. On the base layer 204, for example, a semiconductor layer 205 made of polysilicon in which a channel region, a source region, and a drain region are formed, a gate insulating film 206 formed using, for example, TEOS (Tetraoxysilane), and MoW, for example. The gate electrode 207 is formed in this order, and constitutes a top gate type thin film transistor (TFT). These TFTs are used for pixel switches, output switches, element control circuits, and the like. A scanning signal line formed in the same process as the gate electrode 207 is further formed on the gate insulating film 206.

For example, an interlayer insulating film 208 made of SiO _x or the like formed by a plasma CVD method or the like is formed on the gate insulating film 206 including the gate electrode. For example, the source electrode 209 or the drain electrode 210 having a three-layer structure of Mo / Al / Mo is formed on the interlayer insulating film 208. These electrodes are connected to the source region and the drain region of the TFT through contact holes provided in the interlayer insulating film 208, respectively. A video signal line that can be formed in the same process as the source electrode 209 and the drain electrode 210 is formed on the interlayer insulating film 208. A passivation film 211 made of, for example, SiN _x is formed on the interlayer insulating film 208 including the source electrode 209 and the drain electrode 210.

A first electrode 212 is formed on the passivation film 211 and is electrically connected to the drain electrode 210 through a through hole formed in the passivation film 211. The first electrode 212 is an anode and preferably has a work function of 4.0 eV or more because it plays a role of injecting holes into the organic layer. For example, the anode can be formed using a metal such as indium tin oxide alloy (ITO), tin oxide, zinc oxide, gold, silver, platinum, copper, or an oxide thereof, or a mixture thereof. Among them, it is particularly preferable to use ITO having a large work function of about 5.0 eV. The anode may be formed only at the interface with the organic layer for hole injection into the organic layer 214, and the thickness is not particularly limited.
Usually, it can be used with a film thickness of about 5 nm to 300 nm. The first electrode may be a single layer structure made of ITO having transparency in order to guide light to the light extraction layer formed on the substrate side, the reflection layer, etc., or low resistance electrical conductivity and light reflection. It is good also as multilayer structure, such as ITO / Ag / ITO which has the property.

  Further, a pixel partition layer 213 is provided over the passivation film 211 including the first electrode 212 to form a partition between the pixels. For the pixel partition layer 213, for example, a photosensitive acrylic resin or the like can be used, and patterning can be performed by a normal exposure method.

  On the first electrode 212 including the pixel partition layer 213, an organic layer 214 in which one or more organic thin films including an active layer are stacked is formed. Here, the active layer refers to a region where holes and electrons are combined. The organic layer 214 can be formed of a light emitting material corresponding to R, G, and B for each pixel. For example, in order to improve the coupling efficiency between holes and electrons, various organic thin films such as a hole transport layer, an electron transport layer, an electron injection layer, or a hole block layer may be inserted in addition to the active layer. Good. The material of the active layer, the hole transport layer, and the electron transport layer is not particularly limited, and may be a low molecular weight type or a high molecular weight type. Any material can be used as long as it is a material or an electron transport material.

For example, as the active layer material, tris (8-quinolinol) aluminum complex (Alq ₃ ), bisdiphenylvinylbiphenyl (BDPVBi), 1,3-bis (pt-butylphenyl-1,3,4-oxadi) Azolyl) phenyl (OXD-7), N, N′-bis (2,5-di-t-butylphenyl) perylenetetracarboxylic acid diimide (BPPC), and 1,4 bis (p-tolyl-p-methyl) And styrylphenylamino) naphthalene. Moreover, as a hole transport material, for example, bis (di (p-tolyl) aminophenyl) -1,1-cyclohexane, tetradiphenyldiamine (TPD), N, N′-diphenyl-N, N′-bis (1 -Naphtyl) -1,1′-biphenyl) -4,4′-diamine (α-NPD) and the like, and starburst type molecules. Furthermore, as an electron transport material, for example, oxadi such as 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole (Bu-PBD), OXD-7, etc. Examples thereof include azole derivatives, triazole derivatives, and quinolinol-based metal complexes. The thickness of the organic layer is not particularly limited, but is preferably in the range of 0.01 μm to 1 μm, as is usually used.

  A second electrode 215 is formed on the organic layer 214 including the pixel partition layer 213. The second electrode 215 is electrically connected to a wiring formed on the same layer as the video signal line through a contact hole formed in the pixel partition layer 213 and the passivation film 211. The second electrode 215 is a cathode, and plays a role of injecting electrons. Therefore, the second electrode 215 is preferably a material having a low work function. A feature of the present invention is that a light transmissive electrode having a structure shown in FIG. 1 is used as the second electrode 215. By using this light transmissive metal electrode for the second electrode 215, a highly efficient organic EL display can be obtained. This light-transmitting metal electrode can act as an electrode and simultaneously transmit light having a wavelength in the visible region, which is more than expected from the sum of the areas of the minute openings 103 provided in the metal portion. It has optical transparency. Therefore, it is possible to achieve a higher transmittance than that of a semitransparent metal electrode that is normally used, and an organic EL display with high luminance and high efficiency can be obtained. This display is highly efficient and therefore has a long life.

  The second electrode 215 does not have to be a single layer, and may have a multilayer structure in which a plurality of metal electrode films 101 made of different metals are stacked. For example, in order to efficiently inject electrons into the organic layer 214, a metal having a low work function is formed at the interface with the organic layer 214, and then a two-layer structure in which another metal is laminated, which is as described above. A minute opening 103 may be formed. Further, since electrons cannot be injected from the minute opening 103, an electron diffusion layer may be inserted at the interface between the organic layer 214 and the second electrode 215, or about several nm transparent on the organic layer 214. Alternatively, the second electrode 215 having a multilayer structure in which the metal electrode film 101 having the fine opening 103 formed thereon is stacked may be used after the ultrathin metal is formed. Moreover, you may change the average opening diameter of the micro opening part 103 for every R, G, B pixel.

  In addition, when the minute opening 103 is not a void, the material is not particularly limited as long as it has transparency, and the effect of the present invention is lost even if the hole is embedded by a substance such as a dielectric. There is no. Moreover, in the case of a space | gap, arbitrary gas may be filled. As described above, the light-emitting portion 218 is formed by the first electrode 212, the organic layer 214, and the second electrode 215.

Further, a sealing substrate 219 facing the light emitting portion 218 and a sealing layer (not shown) provided along the peripheral edge of the facing surface are further provided, whereby the sealing between the light emitting portion 218 and the sealing substrate 219 is performed. Forming a space. This space is filled with, for example, a rare gas such as Ar gas or an inert gas such as N ₂ gas, and is used to prevent deterioration of the light emitting unit 218 due to moisture or the like. Means for improving light extraction such as a color filter or a light scattering layer may be provided between the light emitting unit 218 and the sealing substrate 219 for improving contrast.

  As mentioned above, it can be set as the organic EL display which has the outstanding characteristic by replacing the electrode of the conventionally known organic EL display with the light transmissive metal electrode specified by this invention. Here, the light-transmissive metal electrode of the present invention can be used for either the anode or the cathode. However, it is preferable that the light-emitting electrode is a light-transmitting metal electrode, depending on the structure of the device.

Organic EL Lighting Device Next, the structure of the organic EL lighting device according to one embodiment of the present invention is illustrated in FIG. FIG. 4 shows a typical example for helping understanding of the embodiment of the present invention, and it goes without saying that the organic EL display according to the embodiment of the present invention is not limited to the illustrated structure. .

The organic EL lighting device illustrated in FIG. 4 includes a light emitting layer 403 sandwiched between an anode 402 and a cathode 404 on a transparent substrate 401. This illuminating device emits light emitted from the light emitting layer to the transparent substrate side, and the substrate preferably has a high light transmittance, and the transmittance is preferably 80% or more, preferably 90% or more. More preferably. Specifically, glass or plastic is used. In addition to the light-emitting layer 403, a hole injection layer (hole transport layer) or an electron injection layer (electron transport layer) can be formed between the electrodes. That is, in the embodiment of the present invention, typical layer structures of the organic EL lighting device include the following.
1) Light transmissive metal electrode (anode) / light emitting layer / electrode (cathode)
2) Light transmissive metal electrode (anode) / light emitting layer / electron injection layer / electrode (cathode)
3) Light transmissive metal electrode (anode) / hole injection layer / light emitting layer / electron injection layer / electrode (cathode)
4) Light transmissive metal electrode (anode) / hole injection layer / light emitting layer / electrode (cathode)

  Here, in the present invention, the light-transmitting metal electrode is used as the anode electrode. On the light-transmissive metal electrode 402, a hole injection layer and, if necessary, an electron injection layer are formed by vacuum deposition or coating. The electron injecting layer and the hole injecting layer are layers having any of charge injecting property, charge transporting property, and charge blocking property, respectively. These layers may be formed using any of organic materials and inorganic materials, and the thickness is preferably about 10 to 300 nm.

  The cathode 404 need not be light transmissive, but is preferably light reflective. For this reason, it is common that the work function is made of a small metal such as aluminum, magnesium, indium, silver, or an alloy thereof. The thickness of the cathode 404 is preferably about 10 to 500 nm.

  In the light emitting layer, light is generated by recombination of electrons and holes. As this layer, any conventionally known layer can be used according to the emission wavelength required for the lighting device. Specifically, a white organic EL lighting device can be produced with the following configuration.

An aqueous solution of PSS (polystyrene sulfonic acid): PEDOT (polyethylene dioxythiophene) is applied onto the light-transmitting metal electrode by spin coating to form a hole injection layer having a thickness of about 50 nm. On top of this, α-NPD (4,4-bis [N- (1-naphthyl) -n-phenyl-amino] biphenyl) is deposited by vapor deposition to form a hole transport layer having a thickness of about 50 nm. . Next, FIrpic (iridium (III) bis (4,6-di-fluorophenyl) -pyridinato-N, C ² ) picolinate), which is a blue light emitting material, is added to CBP (4,4′-N, N ′). -Dicarbazole-biphenyl) is formed to a thickness of about 10 nm by co-evaporation. Next, Btp2Ir (acac) (bis (2- (2′-benzo [4,5-a] thienyl) pyridinato-N, C ³ ) iridium (acetylacetonato)), which is a red light emitting material, is added to CBP. A 10% doped layer is formed with a thickness of about 10 nm by co-evaporation. Next, a layer in which 10% of CBP is doped with Bt2Ir (acac), which is a yellow light emitting material, is formed to a thickness of about 10 nm by co-evaporation. By providing these blue, red, and yellow light-emitting layers, white light can be generated. Then, BCP (2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline) is deposited thereon with a thickness of about 50 nm by vapor deposition to form an electron transport layer. Finally, LiF / Al is deposited to a thickness of about 150 nm by vapor deposition to form a cathode.

  In the above white organic EL lighting device, the light emitting layer is formed by a vapor deposition method, but can also be formed by a coating method. A method for forming the light emitting layer by a coating method will be described as follows.

  An aqueous solution of PSS: PEDOT is applied onto the light-transmitting metal electrode by spin coating to form a hole injection layer having a thickness of about 50 nm. A solution in which FIrpic, Btp2Ir (acac), and Bt2Ir (acac) are dispersed in PVK (polyvinylcarbazole) is applied by spin coating to form a light emitting layer having a thickness of about 100 nm. White light emission can be obtained by dispersing blue, red, and yellow light emitting materials in PVK. Then, BCP is deposited thereon with a thickness of about 50 nm by vapor deposition to form an electron transport layer. Then, Alq3 (8-hydroxyquinoline aluminum) is deposited thereon with a thickness of about 20 nm by an evaporation method to form an electron injection layer. Finally, Mg: Ag is deposited to a thickness of about 150 nm by a co-evaporation method to form a cathode.

Method of forming light transmissive metal electrode As described in the present invention, a block copolymer phase separation structure as described above is used for the preparation of a light transmissive metal electrode having a pattern exceeding the limit resolution of general lithography. In addition, it is preferable to employ lithography using a single particle layer as an etching mask or lift-off mask. A method for forming a light-transmissive metal electrode in an organic EL lighting device by lift-off will be described with reference to FIG.

  First, the organic polymer layer 501 is formed to 50 to 150 nm on the transparent substrate 401 (FIG. 5A). Next, the inorganic material layer 502 is formed to 5 to 30 nm on the organic polymer film (FIG. 5A). This inorganic material layer functions as an etching mask when the lower organic polymer layer 501 is subjected to oxygen plasma etching. Although the organic polymer layer 501 is easily scraped by oxygen plasma etching, high etching resistance to oxygen plasma etching can be obtained by selecting an appropriate inorganic layer material as the material of the inorganic material layer. Therefore, a mask having a large aspect ratio can be formed, and subsequent lift-off is facilitated. Next, a thin film 503 of block copolymer is formed on the inorganic layer. After forming the diblock copolymer, thermal annealing is performed on a hot plate or in an oven to form dot-like microdomains 504 (FIG. 5A).

  Once the block copolymer has been phase separated, the remaining oriented nanoscale polymer domain can be used as an etching mask if one polymer composition can be more easily removed by etching than the remaining polymer composition. A diblock polymer of a combination of aromatic and acrylic is desirable for this application because of the high etch contrast of the two blocks. For example, polystyrene and polymethylmethacrylate have different etching rates by RIE, so that phase-separated polystyrene domains can be selectively left and used as an etching mask.

After one phase of the block copolymer is selectively removed to form a dot-like pattern, the inorganic material layer 502 is etched using the dot-like pattern as a mask (FIG. 5B).
The inorganic material layer is RIE using CF ₄ or CHF ₃ , or a mixed gas of both. Thereafter, the organic polymer layer is etched by oxygen RIE using the patterned inorganic material layer 502 as a mask. The inorganic material layer is not etched by oxygen plasma, and the etching contrast between the inorganic material layer 502 and the organic polymer layer 501 under the inorganic material layer 502 can be greatly increased, so that a dot pattern with a high aspect ratio can be obtained (FIG. 5C )).

  After the dot pattern is transferred to the organic polymer layer, a metal electrode layer 505 is deposited by vapor deposition (FIG. 5D). As shown in FIG. 5E, when the polymer layer 501 is removed after the metal electrode layer is deposited, the light transmissive metal electrode structure according to an embodiment of the present invention is completed. The inorganic material layer functions as an etching mask when etching the lower organic polymer layer, for example, oxygen plasma etching. Examples of the material for the inorganic material layer include silicon, silicon nitride, and silicon oxide which are deposited as materials exhibiting such characteristics. Also, spin-coated siloxane polymer, polysilane, spin-on-glass, and the like are effective materials when oxygen plasma etching is used.

  Here, the method of forming the light transmissive metal electrode in the organic EL lighting device has been described. However, in the organic EL display, the light transmissive metal electrode is formed by the same method as described above instead of the conventional electrode. Can be made.

  In addition, a pattern master is manufactured by the process before depositing metal by any of the above-described methods, and the pattern is transferred by nanoimprinting using it as a stamper, and light is deposited by depositing metal on the transferred pattern. A permeable metal electrode can also be produced. According to such a method, since a relatively complicated etching process can be omitted, an efficient electrode can be manufactured.

  The present invention will be described below using specific examples. It goes without saying that the present invention is not limited to these examples.

Example 1
On the glass substrate, SiO ₂ and SiN were deposited to a thickness of 100 nm and 50 nm, respectively, by plasma CVD as an underlayer. Subsequently, amorphous silicon was deposited as a semiconductor layer to a thickness of 50 nm by plasma CVD. After performing dehydrogenation annealing, the amorphous silicon was crystallized by irradiating an excimer laser, and the region where the TFT was formed was modified to polysilicon. Further, etching was performed using photolithography to pattern polysilicon. SiO ₂ was deposited as a gate insulating film. Further, MoW was deposited and patterned to form a gate electrode.
After doping, SiO ₂ was deposited by plasma CVD as an interlayer insulating film. Contact holes to the source region and the drain region were formed by photolithography, and then a source electrode and a drain electrode having a three-layer structure of Mo / Al / Mo were formed to form a TFT. Further, SiN was deposited by the plasma CVD method to form a passivation film. After the passivation film was coated with a photosensitive acrylic resin, the passivation film was etched using photolithography to form a through hole with the drain electrode. Thereafter, using a sputtering method, ITO is deposited to a thickness of 10 nm, Ag is deposited to a thickness of 100 nm, ITO is further deposited to a thickness of 10 nm, and then patterned to form a first electrode (anode). ) Was formed. Further, after coating with a photosensitive acrylic resin, patterning was performed by photolithography to form a pixel partition layer. The ITO surface was surface treated with oxygen plasma.

Subsequently, for each color of R, G, and B, α-NPD was deposited with a thickness of 50 nm by a vacuum evaporation method to form a hole transport layer. Using DCM as a dopant and Alq3 as a host material, an 80 nm thick film was deposited by vacuum evaporation to form an active layer and an electron transport layer corresponding to R. Alq3 was deposited to a thickness of 80 nm by a vacuum evaporation method, and an active layer and an electron transport layer corresponding to G were formed. A coumarin 6 was used as a dopant and Alq3 was used as a host material, and an active layer and an electron injection layer corresponding to B were formed by vacuum deposition with a thickness of 80 nm. Further, LiF was deposited to a thickness of 5 nm to form an electron injection layer, and then an MgAg alloy was co-deposited by a vacuum deposition method at a deposition rate ratio of 10: 1 to obtain an MgAg alloy layer having a thickness of 30 nm. . Subsequently, SiO was deposited on the MgAg alloy layer to a thickness of 40 nm by a vacuum vapor deposition method, and then perfluoropolyether was deposited to a thickness of 3 nm by a vacuum vapor deposition method to carry out a surface treatment of the SiO film. Later, TPD was further deposited by vacuum evaporation with a thickness of 9 nm. At this time, TPD was deposited on an SiO film that was hydrophobically treated with perfluoropolyether, so that it grew into islands, and a dot pattern having a random arrangement with an average dot diameter of 60 nm and an average pitch of 75 nm was formed ( FIG. 6). After that, by using TPD as an etching mask, a region of the SiO film not covered with TPD grown in an island shape was etched by 5 nm by dry etching using CF ₄ gas. Further, when the substrate is annealed at 100 ° C., the etched region of the SiO film is a hydrophilic surface, so that the TPD moves to a hydrophilic surface with better wettability and has an average opening diameter of 60 nm and an average pitch of 75 nm. A hole pattern was formed.

Next, using the TPD formed in the hole pattern as an etching mask, the SiO film is dry-etched by 30 nm by dry etching with CF ₄ gas to penetrate the SiO film in the region not covered with the TPD mask, and the MgAg surface is formed. Exposed. At this time, the TPD mask remained with a thickness of about 10 nm. Finally, the MgAg film was etched by sputter etching using Ar gas to remove a depth of 25 nm from the surface. As a result of observing the surface with SEM, fine openings having an average opening diameter of 60 nm and an average pitch of 75 nm were formed in the MgAg film. Furthermore, as a result of observing the cross section by SEM, MgAg at the interface with LiF in the 30 nm MgAg film remains as a thin film with a thickness of 5 nm, and the MgAg film having a minute opening with a thickness of 25 nm It was formed at the top. For the corresponding wavelength, the area where the corresponding metal continuous region was about 180 nm or less as the wavelength of 550 nm occupied about 97% of the total area. All the TPD remaining before Ar sputtering was removed after Ar sputtering, and SiO remained with a thickness of about 10 nm. Finally, the sealing layer was sandwiched between the sealing substrates, and the top emission type organic EL display of Example 1 was obtained.

(Example 2)
The organic layer was formed by the same method as in Example 1. Thereafter, the MgAg alloy was co-evaporated at a deposition rate ratio of 10: 1 by a vacuum deposition method to form an MgAg film having a thickness of 5 nm. Next, a positive resist (THMR-ip3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to form a resist film having a thickness of 80 nm. Furthermore, an organic spin-on-glass (SOG) composition (OCD-T7 5500-T (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to obtain an SOG film having a thickness of 20 nm. Further, a polymer solution prepared by mixing a block polymer of polystyrene (PS) (Mw 78000): polymethyl methacrylate (PMMA) (Mw: 170000) with PMMA (Mw 1500) at a weight ratio of 6: 4 is coated and annealed. The block polymer was phase separated.

Thereafter, only the PMMA phase was removed by dry etching using oxygen gas. Further, using the remaining PS phase as an etching mask, the SOG film was etched by dry etching using CF ₄ gas, and the PS phase pattern was transferred to the SOG film. Further, using the transferred SOG pattern as an etching mask, the resist layer was etched by dry etching using oxygen gas to expose the MgAg surface. On the MgAg surface, a 90 nm high resist / SOG pillar having a random arrangement was formed. Thereafter, the MgAg alloy was co-deposited at a deposition rate ratio of 10: 1 by a vacuum deposition method to form a 20 nm-thick MgAg film. The pillar resist was removed by oxygen plasma to form a second electrode having a minute opening having a pattern opposite to that of the pillar. At this time, the pattern of the minute openings formed in the second electrode had an average opening diameter of about 100 nm and an opening ratio in the entire area of about 32% (FIG. 7). For the corresponding wavelength, the area where the corresponding metal continuous region was about 180 nm or less as the wavelength of 550 nm accounted for about 96% of the total area. Finally, the sealing layer was sandwiched between the sealing substrates, and the top emission type organic EL display of Example 2 was obtained.

(Example 3)
The organic layer was formed by the same method as in Example 1. Thereafter, the MgAg alloy was co-evaporated at a deposition rate ratio of 10: 1 by a vacuum deposition method to form an MgAg film having a thickness of 30 nm. Next, a positive resist (THMR-ip3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to form a resist film having a thickness of 80 nm. Further, an organic SOG composition (OCD-T7 5500-T (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to obtain an SOG film having a thickness of 20 nm. Furthermore, a block polymer of PS (Mw 78000): PMMA (Mw: 170000) was coated with a polymer solution in which PMMA (Mw 1500) was mixed at a weight ratio of 6: 4, and annealing treatment was performed to separate the block polymer into phases. . Thereafter, only the PMMA phase was removed by dry etching using oxygen gas. Further, using the remaining PS phase as an etching mask, SOG was etched by dry etching using CF ₄ gas, and the PS phase pattern was transferred to SOG. Further, using the transferred SOG pattern as an etching mask, the resist layer was etched by dry etching using oxygen gas to expose the MgAg surface. On the MgAg surface, a 90 nm high resist / SOG pillar having a random arrangement was formed. Furthermore, SOG (OCD-T7 12000-T (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated, and pillars were embedded. The buried SOG film was etched back using CF ₄ gas to expose the resist pillar, and the etching was stopped. The resist pillars were removed by etching using oxygen gas to expose the portion of the MgAg surface where the resist pillars were present. Further, the MgAg film was etched by sputter etching using Ar gas to remove it to a depth of 30 nm from the surface, and a second electrode having a minute opening was formed. At this time, the pattern of the minute openings formed in the second electrode had an average opening diameter of about 100 nm and an opening ratio in the entire area of about 32%. For the corresponding wavelength, the area where the corresponding metal continuous region was about 180 nm or less as the wavelength of 550 nm accounted for about 96% of the total area. Finally, the sealing layer was sandwiched between the sealing substrates, and the top emission type organic EL display of Example 3 was obtained.

Example 4
The organic layer was formed by the same method as in Example 1. Thereafter, the MgAg alloy was co-evaporated at a deposition rate ratio of 10: 1 by a vacuum deposition method to form an MgAg film having a thickness of 30 nm.
Further, a photosensitive acrylic resin was coated to 100 nm on the MgAg film. Separately from this substrate, a quartz substrate was prepared, and a positive resist (THMR-ip3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to form a resist film having a thickness of 120 nm. . Further, an organic SOG composition (OCD-T7 5500-T (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was coated and baked to obtain an SOG film having a thickness of 30 nm. Further, a block polymer of PS (Mw 78000): PMMA (Mw: 170000) was coated with a polymer solution in which PMMA (Mw 1500) was mixed at a weight ratio of 6: 4 and annealed to separate the block polymer. Thereafter, only the PMMA phase was removed by dry etching using oxygen gas. Further, using the remaining PS phase as an etching mask, SOG was etched by dry etching using CF ₄ gas, and the PS phase pattern was transferred to SOG. Further, using the transferred SOG pattern as an etching mask, the resist layer was etched by dry etching using oxygen gas to expose the quartz substrate surface. On the quartz substrate, a 130 nm high resist / SOG pillar with a random arrangement was formed.

The obtained resist / SOG pillar was used as an etching mask, and the quartz substrate surface was etched to a depth of 50 nm by dry etching using a CF ₄ / CHF ₃ mixed gas. Finally, the resist was removed by oxygen plasma. On the quartz substrate, a dot pattern having an average dot diameter of about 100 nm and a dot occupation ratio of 32% was formed. The quartz substrate on which this dot pattern was formed was used as a stamper, and the organic EL display substrate was nanoimprinted on a photosensitive acrylic resin with a stamping pressure of 0.5 MPa and photocured by UV irradiation. A hole pattern having a reverse pattern to the stamper was formed in the acrylic resin. The bottom of the hole was removed by dry etching using oxygen gas. Further, the MgAg film was etched by sputter etching using Ar gas to remove a depth of 25 nm from the surface, and a second electrode having a minute opening was formed. At this time, the pattern of the minute openings formed in the second electrode had an average opening diameter of about 100 nm and an opening ratio in the entire area of about 32%. For the corresponding wavelength, the area where the corresponding metal continuous region was about 180 nm or less as the wavelength of 550 nm accounted for about 96% of the total area. Finally, the sealing layer was sandwiched between the sealing substrates, and the top emission type organic EL display of Example 4 was obtained.

(Comparative Example 1)
The organic layer was formed by the same method as in Example 1. Thereafter, the MgAg alloy was co-evaporated at a deposition rate ratio of 10: 1 by a vacuum deposition method to form an MgAg film having a thickness of 15 nm.

  A direct current voltage of 8V was applied to each of the R, G, and B pixels of the example and the comparative example to emit EL. Table 1 shows the total luminous flux ratio of each example with respect to Comparative Example 1. As a result, in the Example of this invention, it was confirmed that the brightness | luminance is improving greatly and a highly efficient organic electroluminescent display is obtained.

(Example 5)
A solution obtained by diluting a resist (THMR-iP3250, (trade name) manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 3 with ethyl lactate was applied to a glass substrate by spin coating at 2000 rpm for 30 seconds. Next, the solvent was evaporated by heating at 110 ° C. for 90 seconds on a hot plate, and annealing was performed at 250 ° C. for 1 hour in a nitrogen atmosphere to thermally cure the resist. The film thickness after curing was 80 nm.

  Next, a solution obtained by diluting an organic SOG composition (OCD-T7 T-5500 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 5 with ethyl lactate is spun onto the resist at 3000 rpm for 30 seconds. It was applied by coating. Further, the solution was heated on a hot plate at 110 ° C. for 90 seconds to evaporate the solvent, and annealed at 250 ° C. for 1 hour in a nitrogen atmosphere. The SOG film thickness after annealing was 20 nm.

  Next, a 3 wt% propylene glycol monomethyl ether acetate (PGMEA) solution of a diblock copolymer of polystyrene (PS) -polymethyl methacrylate (PMMA) was spin-coated on SOG at 2000 rpm for 30 seconds. Thereafter, the solvent was evaporated by heating on a hot plate at 110 ° C. for 90 seconds. The molecular weight of the diblock copolymer used was 78000 g / mol for the PS part and 170000 g / mol for the PMMA part. The film thickness of the block copolymer layer was 50 nm. Next, annealing was performed at 210 ° C. for 4 hours in a nitrogen atmosphere, and phase separation of PS and PMMA of the block copolymer layer was performed. After annealing, a PS dot-like phase separation shape was obtained, and the dot size was 50 to 70 nm.

Next, the block copolymer layer was etched for 8 seconds under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. After oxygen etching, a PS dot pattern was formed. Next, RIE was performed for 60 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power 100 W on the SOG layer using the PS dot pattern as a mask. After etching, the PS pattern was transferred to the SOG layer. Next, RIE was performed for 90 seconds under the conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W using the SOG layer as a mask. After the etching, a resist columnar pattern having a high aspect ratio was obtained.

  Thereafter, aluminum was deposited in a thickness of 30 nm on the columnar pattern by vapor deposition. Thereafter, lift-off was performed to remove the columnar resist pattern, and a light-transmitting metal electrode having a desired opening was obtained. The produced light transmissive metal electrode had an average opening diameter of 50 to 70 nm, and the opening ratio in the entire area was about 32%. The resistivity of the film was 30 μΩ · cm.

  An aqueous solution of PSS: PEDOT was applied onto the light-transmitting metal electrode by spin coating to form a hole injection layer having a thickness of 40 nm. On top of that, α-NPD was deposited to a thickness of about 20 nm by a vapor deposition method to form a hole transport layer. Next, a blue light-emitting layer in which FIrpic, which is a blue light-emitting material, was doped 10% in CBP was formed to a thickness of 10 nm by co-evaporation. Next, a red light emitting layer in which Btp2Ir (acac), which is a red light emitting material, was doped 10% in CBP was formed to a thickness of 10 nm by co-evaporation. Next, a yellow light emitting layer in which 10% of CBP was doped with Bt2Ir (acac), which is a yellow light emitting material, was formed to a thickness of 10 nm by co-evaporation. And BCP was deposited on it with the thickness of 40 nm by the vapor deposition method, and the electron carrying layer was formed. Finally, LiF (1 nm) / Al (150 nm) was deposited by an evaporation method to form a cathode, thereby completing a white organic EL lighting device. A conceptual cross-sectional view of the organic EL lighting device thus obtained is as shown in FIG.

  When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%. Since the resistivity of the light-transmitting metal electrode of the anode was 1/3 or less of that of ITO, uniform light emission was enabled.

(Example 6)
In the same manner as in Example 5, a resist layer, an SOG layer, and then a block polymer layer were formed on a glass substrate.

Next, the block copolymer layer was etched for 10 seconds under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. After oxygen etching, a PS dot pattern was formed. Next, RIE was performed for 60 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power 100 W on the SOG layer using the PS dot pattern as a mask.
After etching, the PS pattern was transferred to the SOG layer. Next, RIE was performed for 90 seconds under the conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W using the SOG layer as a mask. After the etching, a resist columnar pattern having a high aspect ratio was obtained.

  Thereafter, aluminum was deposited in a thickness of 30 nm on the columnar pattern by vapor deposition. Thereafter, lift-off was performed to remove the columnar resist pattern, and a light-transmitting metal electrode having a desired opening was formed. The produced light-transmitting metal electrode had an average opening diameter of 30 to 50 nm and an opening ratio in the entire area of about 15%. The resistivity of the film was 10 μΩ · cm.

  In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device.

  When the obtained organic EL lighting device was evaluated for luminance unevenness, the difference in luminance between the center portion and the edge was within 5%. Since the resistivity of the light-transmitting metal electrode of the anode is about 1/10 that of ITO, the light can be emitted more uniformly.

(Example 7)
In the same manner as in Example 5, a resist layer, an SOG layer, and then a block polymer layer were formed on a glass substrate.

Next, the block copolymer layer was etched for 8 seconds under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. After the oxygen etch, a PS dot pattern was formed. Next, RIE was performed for 60 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power 100 W on the SOG layer using the PS dot pattern as a mask. After etching, the PS pattern was transferred to the SOG layer. Next, RIE was performed for 90 seconds under the conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W using the SOG layer as a mask. After the etching, a resist columnar pattern having a high aspect ratio was obtained.

  Thereafter, copper was deposited in a thickness of 30 nm on the columnar pattern by vapor deposition. Thereafter, lift-off was performed to remove the columnar resist pattern, and a light-transmitting metal electrode having a desired opening was formed. The produced light-transmitting metal electrode had an average opening diameter of 50 to 70 nm, and the opening ratio in the entire area was about 35%. The resistivity of the film was 20 μΩ · cm.

  In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device.

  When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%. Since the resistivity of the light transmissive metal electrode of the anode is about 1/5 that of ITO, uniform light emission can be achieved.

(Example 8)
In the same manner as in Example 5, a resist layer, an SOG layer, and then a block polymer layer were formed on a glass substrate.

Next, the block copolymer layer was etched for 8 seconds under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. After oxygen etching, a PS dot pattern was formed. Next, RIE was performed for 60 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power 100 W on the SOG layer using the PS dot pattern as a mask. After etching, the PS pattern was transferred to the SOG layer. Next, RIE was performed for 90 seconds under the conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W using the SOG layer as a mask. After the etching, a resist columnar pattern having a high aspect ratio was obtained.

  Thereafter, gold was deposited in a thickness of 30 nm on the columnar pattern by vapor deposition. Thereafter, lift-off was performed to remove the columnar resist pattern, and a light-transmitting metal electrode having a desired opening was formed. The produced light-transmitting metal electrode had an average opening diameter of 50 to 70 nm, and the opening ratio in the entire area was about 35%. The resistivity of the film was 35 μΩ · cm.

  In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device.

  When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%. Since the resistivity of the light transmissive metal electrode of the anode is about 1/3 of that of ITO, uniform light emission can be achieved.

Example 9
In the same manner as in Example 5, a light transmissive metal electrode was formed on a glass substrate.

  An aqueous solution of PSS: PEDOT was applied onto the light-transmitting metal electrode by spin coating to form a 40 nm thick hole injection layer. Then, a solution in which FIrpic, Btp2Ir (acac), and Bt2Ir (acac) are dispersed at a ratio of 10: 0.25: 0.25 on PVK which is a light emitting layer is applied by spin coating, and about 80 nm in thickness is applied. A light emitting layer having a thickness was formed. Then, BCP was deposited thereon by an evaporation method to form an electron transport layer having a thickness of about 20 nm. Then, Alq3 was deposited thereon with a thickness of 20 nm by a vapor deposition method to form an electron injection layer. Finally, Mg: Ag (5%) was deposited by a co-evaporation method to a thickness of about 150 nm to form a cathode, thereby completing a white organic EL lighting device. A cross-sectional conceptual diagram of the organic EL lighting device thus obtained is as shown in FIG.

  When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%.

(Example 10)
This example shows a method for manufacturing an organic EL lighting device by an etching method.
An aluminum layer 1001 having a thickness of 30 nm was deposited on the transparent substrate 401 (glass substrate) by a vapor deposition method (FIG. 10A). A resist (THMR-iP3250 (trade name), Tokyo Ohka Kogyo Co., Ltd.) diluted 1: 3 with ethyl lactate was spin-coated at 2000 rpm for 30 seconds, and then heated on a hot plate at 110 ° C. The solvent was evaporated by heating for 90 seconds, annealed at 250 ° C. for 1 hour in a nitrogen atmosphere, and the resist was thermally cured to form an organic polymer layer 501. The film thickness of the organic polymer layer was 80 nm (FIG. 10 (a)).
Next, a solution obtained by diluting an organic SOG composition (OCD-T7 T-5500 (trade name), Tokyo Ohka Kogyo Co., Ltd.) 1: 5 with ethyl lactate is spin-coated on the rangen at 3000 rpm for 30 seconds. After that, it was heated on a hot plate at 110 ° C. for 90 seconds to evaporate the solvent, and annealed at 250 ° C. for 1 hour in a nitrogen atmosphere. The SOG after annealing, that is, the film thickness of the inorganic material layer 502 was 20 nm (FIG. 10A).

  Next, a 3% by weight propylene glycol monomethyl ether acetate (PGMEA) solution of polystyrene (PS) -polymethyl methacrylate (PMMA) diblock copolymer was spin-coated on SOG at 2000 rpm for 30 seconds to form a block copolymer layer 503. Formed. Thereafter, the solvent was evaporated by heating on a hot plate at 110 ° C. for 90 seconds. The molecular weight of the diblock copolymer used was 78000 g / mol for the PS part and 170000 g / mol for the PMMA part. The film thickness of the block copolymer layer was 50 nm. Next, annealing was performed at 210 ° C. for 4 hours in a nitrogen atmosphere, and phase separation of PS and PMMA of the block copolymer layer was performed. After annealing, a PS dot-like phase separation shape 504 was obtained, and the dot size was 50 to 70 nm (FIG. 10A).

Next, the block copolymer layer was etched for 8 seconds under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. After oxygen etching. A PS dot pattern was formed. Next, RIE was performed for 60 seconds under the conditions of CF4: 30 sccm, 10 mTorr, and RF power 100 W on the SOG layer using the PS dot pattern as a mask. After etching, the PS pattern was transferred to the SOG layer (FIG. 10 (b)). Next, RIE was performed for 90 seconds under the conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W using the SOG layer as a mask. After the etching, a resist columnar pattern having a high aspect ratio was obtained (FIG. 10C).
Next, an organic SOG composition (T-12000 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) was applied to the resist columnar pattern by spin coating at 3000 rpm for 30 seconds. After application, the resist columnar pattern was completely embedded and flattened (FIG. 10D). Further, the solvent was evaporated by heating at 110 ° C. for 90 seconds on a hot plate.

Next, the SOG film was subjected to RIE for 8 minutes under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power of 100 W. After etching the SOG film, the top of the resist columnar pattern was exposed. Thereafter, etching was performed for 60 seconds under conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W, and the resist was removed. After removing the resist, an SOG hole pattern was formed (FIG. 10E).

Next, the aluminum was etched using an SOG mask. _{Cl 2: 15sccm, Ar: 15sccm} , was carried out 60 seconds RIE under the conditions of RF power 100W.
After etching, an aluminum pattern having an average opening diameter of 50 to 70 nm and an opening ratio of about 32% in the entire area was formed. The remaining SOG mask was removed by performing RIE for 30 seconds with CF ₄ : 30 sccm, 10 mTorr, and RF power of 100 W (FIG. 10F).

  In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device. The obtained organic EL lighting device had a structure as shown in FIG.

(Example 11)
This example shows a method for producing an organic EL lighting device of the present invention using a single particle layer as a template.

  A solution obtained by diluting a thermosetting resist (THMR IP3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 3 with ethyl lactate is spin-coated on a glass substrate at 1500 rpm for 30 seconds, and then hot plate After heating at 110 ° C. for 90 seconds above, it was further heated at 250 ° C. for 1 hour in a non-oxidizing oven in a nitrogen atmosphere to cause thermosetting reaction. The film thickness was approximately 120 nm.

Next, a solution obtained by diluting a thermosetting resist (THMR IP3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 5 with ethyl lactate is rotated on a substrate coated with the resist at 3000 rpm for 30 seconds. After coating, the film was heated on a hot plate at 110 ° C. for 90 seconds. Further, this resist layer was etched for 5 seconds using a reactive reactive etching apparatus at O ₂ : 30 sccm, 100 mTorr, and RF power 100 W. By this treatment, the uppermost resist layer is hydrophilized, and the wettability during the subsequent dispersion application is improved.

Next, the silica fine particle dispersion (PL-13 (trade name), manufactured by Fuso Chemical Industry Co., Ltd.) was filtered with a 1 μm mesh filter to obtain a silica fine particle dispersion to be actually applied. This solution was spin-coated on the substrate at 1000 rpm for 60 seconds.
After drying the substrate, annealing was performed on a hot plate at 220 degrees for 30 minutes. By this treatment, the resist layer in which only the lowermost particles of the silica fine particles are hydrophilized sinks. Thereafter, the resist layer is cured again by cooling at room temperature, and only the bottom layer of the fine particles is captured on the substrate surface.

  Next, silica fine particles other than the lowermost layer are removed by rubbing the entire surface of the substrate with Bencott or the like while washing the surface of the substrate with pure water.

Next, the silica fine particle single particle film was etched for 225 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power of 100 W. In this process, the silica fine particles are etched and the radius is reduced, so that gaps are formed between adjacent particles. Under this condition, the underlying resist layer is hardly etched. After etching to a predetermined particle size, the remaining silica fine particles were used as a mask, and the underlying thermosetting resist was subjected to O ₂ -RIE for 105 seconds with O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W. As a result, a columnar pattern with a high aspect ratio was obtained at the site where there were silica particles with a small particle size in the initial stage.

Aluminum was deposited in a thickness of 30 nm on the completed columnar pattern by resistance heating vapor deposition. Thereafter, in this process, the substrate was completely exposed at the etching site. Then, with respect to columnar pattern this _form, O 2: Been 30 sccm, 100 mTorr, the _O 2 -RIE 5 minutes at a RF power 100W. Thus, only the resist layer which is the base of the silica fine particles is etched. By performing such processing, it becomes easy to remove the mask pattern portion. Subsequently, a lift-off process of removing the columnar pattern portion by immersing in water and performing ultrasonic cleaning was performed. As a result, a light-transmissive metal electrode having a desired opening was obtained.

  The produced light-transmitting metal electrode had an average opening diameter of about 100 nm, an opening ratio in the entire area of about 30%, and a resistivity of about 17 μΩ · cm.

  In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device. The obtained organic EL lighting device had a structure as shown in FIG.

  When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%.

(Example 12)
In this embodiment, a mass production method using nanoimprint will be described. A nanoimprinted Ni-based stamper tamper is prepared using a columnar pattern of silica fine particles as a template.

  First, a solution obtained by diluting a thermosetting resist (THMR IP3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 3 with ethyl lactate is spin-coated on a 6-inch silicon wafer 11 at 1500 rpm for 30 seconds. After that, it was heated at 110 ° C. for 90 seconds on a hot plate. Further, the resist layer was formed by heating in a non-oxidizing oven at 250 ° C. for 1 hour in a nitrogen atmosphere and thermosetting reaction. The film thickness was approximately 120 nm.

A solution obtained by diluting a thermosetting resist (THMR IP3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 5 with ethyl lactate is spin-coated at 3000 rpm for 30 seconds on the substrate coated with the resist. After that, it was heated at 110 ° C. for 90 seconds on a hot plate. Further, this resist layer was etched for 5 seconds using a reactive reactive etching apparatus under the conditions of O ₂ : 30 sccm, 100 mTorr, and RF power of 100 W. By this treatment, a hydrophilized resist layer is formed on the uppermost surface, and the wettability during subsequent application of the fine particle dispersion is improved.

Next, the silica fine particle dispersion (PL-13 (trade name), manufactured by Fuso Chemical Industry Co., Ltd.) was filtered with a 1 μm mesh filter to obtain a silica fine particle dispersion to be actually applied. This solution was spin-coated on the substrate at 1000 rpm for 60 seconds.
After drying the substrate, annealing was performed on a hot plate at 220 ° C. for 30 minutes.
By this treatment, only the lowermost particles of the silica fine particles are hydrophilized and sink into the resist layer. Thereafter, the resist layer is cured again by cooling at room temperature, and only the bottom layer of the fine particles is captured on the substrate surface.

  Next, while washing the substrate surface with pure water, the entire surface of the substrate is rubbed with a bencot or the like to remove silica fine particles other than the lowermost layer. By this treatment, a fine monomolecular film is formed on the resist layer.

Next, the silica fine particle single particle film was etched for 225 seconds under the conditions of CF ₄ : 30 sccm, 10 mTorr, and RF power of 100 W. In this process, the silica fine particles are etched and the radius is reduced, so that gaps are formed between adjacent particles. Under this condition, the underlying resist layer is hardly etched. After etching to a predetermined particle size, the remaining silica fine particles are used as a mask, and the underlying thermosetting resist is subjected to O ₂ -RIE for 105 seconds under conditions of O ₂ : 30 sccm, 10 mTorr, and RF power of 100 W. It was. In this process, the substrate was completely exposed at the etching site. As a result, a columnar pattern with a high aspect ratio was obtained at the site where there were silica particles with a small particle size in the initial stage.

A nickel conductive film is formed by a sputtering process on a columnar pattern made of finely divided silica fine particles and a resist obtained on a silicon wafer. After the chamber vacuum was set to 8 × 10 ⁻³ Pa, the pressure was adjusted to 1 Pa with argon, and sputtering was performed for 40 seconds at a DC power of 400 W using pure nickel as a target. The thickness of the conductive film was 30 nm.

Furthermore, plating was performed for 90 minutes using a nickel (III) sulfamate plating solution (manufactured by Showa Chemical Industry Co., Ltd .: NS-160 (trade name)) to obtain an original plate having a plated conductive film. The plating conditions are as follows.
Nickel sulfamate :: 600 g / L;
Boric acid: 40 g / L;
Surfactant (sodium lauryl sulfate): 0.15 g / L;
Liquid temperature: 55 ° C;
pH: pH: 4.0;
Current density: 20 A / dm ²

  As a result, the thickness of the plating film was 0.3 mm. After that, the stamper having a conductive film was peeled off from the wafer with the columnar fine silica and columnar resist of the plating film to obtain an independent plating film.

Resist and silica residues adhering to the plating film can generally be removed by CF ₄ etching and oxygen plasma ashing removal. The surface of the plating film nickel was subjected to oxygen plasma ashing and CF ₄ / O ₂ RIE treatment to remove residues, and then an excess portion of the stamper was removed by a punching process to obtain an imprint stamper. Since the columnar pattern is used as a mold, the obtained stamper has the shape of a hole pattern in which numerous openings are opened. The nickel stamper imprint stamper to which the arrangement pattern of the silica fine particles is transferred as described above is used as a nanoimprint master.
Next, a solution obtained by diluting a thermosetting resist (THMR IP3250 (trade name), manufactured by Tokyo Ohka Kogyo Co., Ltd.) 1: 3 with ethyl lactate was spin-coated on a glass substrate at 2500 rpm for 30 seconds. After that, a resist layer was formed by heating at 110 ° C. for 90 seconds on a hot plate. The thickness of the resist film was 120 nm. Thereafter, the sample was placed on the stage of the nanoimprint apparatus, and pressed for 1 minute using an imprint stamper at 120 ° C. and a pressure of 0.5 MPa to imprint a nickel hole pattern. By this treatment, a resist columnar pattern was formed on the quartz substrate. Next, RIE using oxygen gas was performed on the resist layer to which the pattern was transferred to remove the resist residue remaining at the time of imprinting, and the substrate was completely exposed except for the columnar pattern portion.
Thereafter, aluminum was deposited on the resist columnar pattern formed on the surface of the quartz amorphous quartz by a resistance heating vapor deposition method to form an aluminum film with a thickness of 30 nm. _Then, O 2: Been 30 sccm, 100 mTorr, the _O 2 -RIE 5 minutes at a RF power 100W. Thereafter, a lift-off process of immersing in water and performing ultrasonic cleaning to remove the columnar pattern portion resulted in a light-transmissive metal electrode having a desired opening. The obtained transmissive metal electrode had a peak transmittance in the visible range of about 52% and a resistivity of about 19 Ω · cm.

In the same manner as in Example 5, a hole injection layer, a hole transport layer, a blue light emitting layer, a red light emitting layer, a yellow light emitting layer, an electron transport layer, and a cathode were formed to complete a white organic EL lighting device. The obtained organic EL lighting device had a structure as shown in FIG.
When the luminance unevenness of the obtained organic EL lighting device was evaluated, the difference in luminance between the center portion and the edge was within 10%.

  The nickel-base stamper used in the experiment of this example was not damaged in shape even after the imprinting experiment, and the same pattern manufacturing experiment could be repeated.

The figure which shows an example of the pattern of the metal electrode which has a light transmittance which has an opening part. Schematic of the organic EL display of the present invention. The pixel sectional view of the organic EL display of the present invention. Sectional drawing of the organic electroluminescent illuminating device which is one embodiment of this invention. The conceptual diagram of the formation method of the transparent metal electrode in this invention. 3 is an AFM image of a TPD mask formed on the SiO film of Example 1. FIG. 3 is an SEM image showing a second electrode surface structure of Example 2. FIG. Sectional drawing of the organic electroluminescent illuminating device of Example 5. FIG. Sectional drawing of the organic electroluminescent illuminating device of Example 9. FIG. The conceptual diagram of the formation method of the organic electroluminescent illuminating device in Example 10. FIG.

101 Metal electrode layer 102 Metal part 103 Opening 201 Substrate 202 Pixel driving circuit part 203 Pixel 204 Underlayer 205 Semiconductor layer 206 Gate insulating film 207 Gate electrode 208 Interlayer insulating film 209 Source electrode 210 Drain electrode 211 Passivation film 212 First Electrode 213 Pixel partition layer 214... Organic layer 215 second electrode 218 light emitting part 219 sealing substrate 401 transparent substrate 402 anode 403 light emitting layer 404 cathode 501 organic polymer layer 502 inorganic substance layer 503 block copolymer thin film 504 dot-like microdomain 505 metal Electrode layer 1001 Aluminum layer

Claims (9)

A light emitting section sandwiched between a transparent substrate, a first electrode provided at a position close to the transparent substrate, and a second electrode provided at a position far from the transparent substrate; An organic electroluminescence lighting device comprising an organic layer on a second electrode side surface of an electrode,
The first electrode comprises a metal electrode layer;
The metal electrode layer has a plurality of openings therethrough;
Between any two points of the metal part of the metal electrode layer is continuous,
The opening diameter is in the range of 10 nm to 780 nm;
The thickness of the metal electrode layer is in the range of 10 nm to 200 nm,
The openings are randomly arranged in the metal electrode layer;
When the distribution of the arrangement period of the openings is represented by a radial distribution curve, the half width is in the range of 5 to 300 nm. A light emitting section sandwiched between a transparent substrate, a first electrode provided at a position close to the transparent substrate, and a second electrode provided at a position far from the transparent substrate; An organic electroluminescence lighting device comprising an organic layer on a second electrode side surface of an electrode,
The first electrode comprises a metal electrode layer;
The metal electrode layer has a plurality of openings therethrough;
Between any two points of the metal part of the metal electrode layer is continuous,
In the metal electrode layer, the portion where the linear distance of the continuous metal portion that is not obstructed by the opening is 1/3 or less of the wavelength of the visible light region wavelength 380 nm to 780 nm to be used is 90% or more of the total area. ,
The average opening diameter is in the range of 10 nm or more and 1/3 or less of the wavelength of the light,
The center-to-center pitch of the openings is in the range of not less than the average opening diameter and not more than 1/2 of the wavelength of the light,
The thickness of the metal electrode layer is in the range of 10 nm to 200 nm,
The organic electroluminescence lighting device, wherein the openings are randomly arranged in the metal electrode layer.   The organic electroluminescence lighting device according to claim 1, wherein the metal electrode layer is made of a material having a plasma frequency higher than a frequency of incident light. The metal electrode layer is formed of a plurality of micro domains adjacent to each other,
The openings arranged in each of the microdomains are periodically arranged, and the microdomains are arranged so that the arrangement direction of the openings is random. 4. The organic electroluminescence lighting device according to any one of 3 above.   The metal electrode layer is made of at least one selected from the group consisting of aluminum, gold, silver, copper, indium, magnesium, lithium, scandium, calcium, nickel, cobalt, and platinum. 2. The organic electroluminescence lighting device according to item 1.   The organic electroluminescent lighting device according to any one of claims 1 to 5, wherein a peak value of light transmittance of the metal electrode layer is equal to or greater than an average area ratio of openings in the metal electrode layer.   The organic electroluminescent lighting device according to any one of claims 1 to 6, comprising the metal electrode layer as an anode.   The organic electroluminescence lighting device according to claim 1, wherein the transmittance of the metal electrode layer is 80% or more.   The organic electroluminescent lighting device according to claim 1, wherein the organic layer contains polyethylene dioxythiophene.