JP2014160731A5 - - Google Patents
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- JP2014160731A5 JP2014160731A5 JP2013030291A JP2013030291A JP2014160731A5 JP 2014160731 A5 JP2014160731 A5 JP 2014160731A5 JP 2013030291 A JP2013030291 A JP 2013030291A JP 2013030291 A JP2013030291 A JP 2013030291A JP 2014160731 A5 JP2014160731 A5 JP 2014160731A5
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- Prior art keywords
- metal
- ceramic substrate
- optical element
- porous ceramic
- substrate
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 32
- 238000007747 plating Methods 0.000 claims description 29
- 239000000919 ceramic Substances 0.000 claims description 23
- 230000003287 optical Effects 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000010304 firing Methods 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N AI2O3 Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 2
Description
（１）多孔質セラミックス基板を用意する工程と、前記多孔質セラミックス基板上に、その酸化物が透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属膜を形成する工程と、前記金属膜上又は前記金属膜上に形成されたメッキシード層上に貴金属でない金属メッキ層を形成する工程と、前記金属メッキ層を部分的に除去する工程と、セ氏６００度以下の温度で焼成することにより、前記金属膜を酸化により透明かつ絶縁性を有する金属酸化物層へと変化させ、前記金属メッキ層はその内部が酸化されず、導電性を維持する工程と、を有する光学素子用基板の製造方法。 (1) Preparing a porous ceramic substrate, and forming a metal film on the porous ceramic substrate, the oxide of which is transparent and insulative , and the thickness of which is thicker than the irregularities on the surface of the porous ceramic substrate A step of forming a metal plating layer that is not a noble metal on the metal film or a plating seed layer formed on the metal film, a step of partially removing the metal plating layer, and 600 degrees Celsius or less. The metal film is converted into a transparent and insulating metal oxide layer by oxidation , and the metal plating layer is not oxidized inside, and maintains the conductivity. The manufacturing method of the board | substrate for optical elements which has.
（６）多孔質セラミックス基板を用意する工程と、前記セラミックス基板上に、その酸化物が透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属膜を形成する工程と、前記金属膜上又は前記金属膜上に形成されたメッキシード層上に貴金属でない金属メッキ層を形成する工程と、前記金属メッキ層を部分的に除去する工程と、セ氏６００度以下の温度で焼成することにより、前記金属膜を酸化により透明かつ絶縁性を有する金属酸化物層へと変化させ、前記金属メッキ層はその内部が酸化されず、導電性を維持する工程と、フリップチップ実装により前記金属メッキ層に光学素子を接続する工程と、を有する光学素子パッケージの製造方法。 (6) A step of preparing a porous ceramic substrate, and a step of forming on the ceramic substrate a metal film whose oxide is transparent and insulative and whose thickness is thicker than the irregularities on the surface of the porous ceramic substrate. A step of forming a metal plating layer that is not a noble metal on the metal film or a plating seed layer formed on the metal film, a step of partially removing the metal plating layer, and a temperature of 600 degrees Celsius or less. in by firing, the metal film transparency and is changed into a metal oxide layer having an insulating property by oxidation, the metal plating layer is not inside the oxidation, the step of maintaining the conductivity, the flip-chip mounting And a step of connecting an optical element to the metal plating layer.
（７）多孔質セラミックス基板と、前記多孔質セラミックス基板上に形成された、透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属酸化物層と、前記金属酸化物層上に貴金属でない金属により形成され、その内部が酸化されず、導電性を維持する配線パターンと、を有する光学素子用基板。 (7) A porous ceramic substrate, a metal oxide layer formed on the porous ceramic substrate, having a transparent and insulating property, and having a thickness larger than the irregularities on the surface of the porous ceramic substrate, and the metal oxide An optical element substrate comprising: a wiring pattern which is formed of a metal that is not a noble metal on a physical layer , the inside of which is not oxidized, and maintains electrical conductivity .
そして、金属メッキ層１２１及びメッキシード層１２０をエッチングし部分的に除去し、図３Ｄに示すように配線パターン１２を得る。このとき、メッキシード層１２０は金属膜１３上に形成されており、多孔質セラミックス基板１０の凹部に入り込まないため、エッチング不良による残存は生じにくい。また、この工程で金属膜１３をも同時にエッチングしても差し支えはないが、多孔質セラミックス基板１０は表面に多数の凹凸を有するため、完全にエッチングをすることは難しく、エッチング不良による残存が生じやすい。なお、前述の通り、メッキシード層１２０を省略している場合には、この工程では金属メッキ層１２１のみ又は金属メッキ層１２１と金属膜１３を部分的に除去することとなる。本実施形態では、銅に対する選択エッチングを行っているため、金属メッキ層１２１及びメッキシード層１２０に対するエッチングのみが行われ、金属膜１３はエッチングされることなく残存する。 Then, the metal plating layer 121 and the plating seed layer 120 are etched and partially removed to obtain the wiring pattern 12 as shown in FIG. 3D. At this time, since the plating seed layer 120 is formed on the metal film 13 and does not enter the concave portion of the porous ceramic substrate 10, the plating seed layer 120 is unlikely to remain due to defective etching. In this step, the metal film 13 may be etched at the same time. However, since the porous ceramic substrate 10 has a large number of irregularities on the surface, it is difficult to completely etch, and a residual due to defective etching occurs. Cheap. As described above, when the plating seed layer 120 is omitted, in this step, only the metal plating layer 121 or the metal plating layer 121 and the metal film 13 are partially removed. In this embodiment, since selective etching with respect to copper is performed, only etching with respect to the metal plating layer 121 and the plating seed layer 120 is performed, and the metal film 13 remains without being etched.
Claims (8)
前記多孔質セラミックス基板上に、その酸化物が透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属膜を形成する工程と、
前記金属膜上又は前記金属膜上に形成されたメッキシード層上に貴金属でない金属メッキ層を形成する工程と、
前記金属メッキ層を部分的に除去する工程と、
セ氏６００度以下の温度で焼成することにより、前記金属膜を酸化により透明かつ絶縁性を有する金属酸化物層へと変化させ、前記金属メッキ層はその内部が酸化されず、導電性を維持する工程と、
を有する光学素子用基板の製造方法。 A step of preparing a porous ceramic substrate;
On the porous ceramic substrate, the oxide has a transparent and insulating property, and the thickness thereof forms a metal film thicker than the irregularities on the surface of the porous ceramic substrate ;
Forming a metal plating layer that is not a noble metal on the metal film or a plating seed layer formed on the metal film;
Removing the metal plating layer partially;
By firing Celsius 600 degrees or less temperature, the metal film transparency and is changed into a metal oxide layer having an insulating property by oxidation, the metal plating layer is inside not oxidized, to maintain the conductive Process,
The manufacturing method of the board | substrate for optical elements which has these.
前記セラミックス基板上に、その酸化物が透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属膜を形成する工程と、
前記金属膜上又は前記金属膜上に形成されたメッキシード層上に貴金属でない金属メッキ層を形成する工程と、
前記金属メッキ層を部分的に除去する工程と、
セ氏６００度以下の温度で焼成することにより、前記金属膜を酸化により透明かつ絶縁性を有する金属酸化物層へと変化させ、前記金属メッキ層はその内部が酸化されず、導電性を維持する工程と、
フリップチップ実装により前記金属メッキ層に光学素子を接続する工程と、
を有する光学素子パッケージの製造方法。 A step of preparing a porous ceramic substrate;
A step of forming a metal film on the ceramic substrate, the oxide of which is transparent and insulating , and whose thickness is thicker than the irregularities on the surface of the porous ceramic substrate ;
Forming a metal plating layer that is not a noble metal on the metal film or a plating seed layer formed on the metal film;
Removing the metal plating layer partially;
By firing Celsius 600 degrees or less temperature, the metal film transparency and is changed into a metal oxide layer having an insulating property by oxidation, the metal plating layer is inside not oxidized, to maintain the conductive Process,
Connecting the optical element to the metal plating layer by flip chip mounting;
A method for manufacturing an optical element package.
前記多孔質セラミックス基板上に形成された、透明かつ絶縁性を有するとともに、その厚みが前記多孔質セラミックス基板表面の凹凸より厚い金属酸化物層と、
前記金属酸化物層上に貴金属でない金属により形成され、その内部が酸化されず、導電性を維持する配線パターンと、
を有する光学素子用基板。 A porous ceramic substrate;
The porous ceramic is formed on a substrate, and a transparent and insulating properties, and the thickness of the porous ceramic substrate thick metal oxide than the unevenness of the surface layer,
A wiring pattern formed of a metal that is not a noble metal on the metal oxide layer , the inside of which is not oxidized, and maintains conductivity ,
An optical element substrate.
フリップチップ実装により前記配線パターンに接続された光学素子と、
を有する光学素子パッケージ。 An optical element substrate according to claim 7,
An optical element connected to the wiring pattern by flip chip mounting;
An optical element package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013030291A JP6172966B2 (en) | 2013-02-19 | 2013-02-19 | Optical element substrate, optical element package manufacturing method, optical element substrate, and optical element package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013030291A JP6172966B2 (en) | 2013-02-19 | 2013-02-19 | Optical element substrate, optical element package manufacturing method, optical element substrate, and optical element package |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014160731A JP2014160731A (en) | 2014-09-04 |
| JP2014160731A5 true JP2014160731A5 (en) | 2016-04-07 |
| JP6172966B2 JP6172966B2 (en) | 2017-08-02 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013030291A Active JP6172966B2 (en) | 2013-02-19 | 2013-02-19 | Optical element substrate, optical element package manufacturing method, optical element substrate, and optical element package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6172966B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| HUE064697T2 (en) * | 2015-12-22 | 2024-04-28 | Heraeus Electronics Gmbh & Co Kg | Method for the individual encoding of metal-ceramic substrates |
| JP6868455B2 (en) * | 2016-06-02 | 2021-05-12 | パナソニック株式会社 | Electronic component package and its manufacturing method |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006287126A (en) * | 2005-04-04 | 2006-10-19 | Toyoda Gosei Co Ltd | Led lamp and its unit sheet manufacturing method |
| JP4744335B2 (en) * | 2006-01-30 | 2011-08-10 | 京セラ株式会社 | Light emitting device and lighting device |
| TWI314366B (en) * | 2006-04-28 | 2009-09-01 | Delta Electronics Inc | Light emitting apparatus |
| JP2008091831A (en) * | 2006-10-05 | 2008-04-17 | Toshiba Corp | Submount substrate for led, manufacturing method thereof, and light emitting device using the substrate |
| JP4780203B2 (en) * | 2009-02-10 | 2011-09-28 | 日亜化学工業株式会社 | Semiconductor light emitting device |
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- 2013-02-19 JP JP2013030291A patent/JP6172966B2/en active Active
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