JP2014155914A - Method of cleaning semiconductor module, method of cleaning camera module, method of manufacturing semiconductor module, and method of manufacturing camera module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve the quality and yield of an imaging element by securely removing fine foreign matter of micro order present on a substrate and an imaging element and suppressing or preventing re-sticking thereof by improving pure water cleaning performance and drying performance before the imaging element is sealed in a step, and to project a body picked up by the imaging element more clearly in an image by removing black flaws in the image during the imaging.SOLUTION: Water wettability of a chip surface (element surface) of an imaging element 4 as a semiconductor element is improved by performing hydrophilic processing before pure water cleaning even when the chip surface is made of a hydrophobic material before the imaging element 4 is hermetically closed or sealed with a lens holder 7. A method of manufacturing a camera module 1 that uses the method of cleaning the camera module 1 further includes a hermetical closing or sealing step of hermetically closing or sealing a substrate 2 and the imaging element 4, which have been subjected to the pure water cleaning after the hydrophilic processing, with the lens holder 7.

Description

  The present invention relates to a semiconductor module having a cleaning process for removing foreign matter on a semiconductor element in a manufacturing process from a die bonding process to an element containment process in an assembly of semiconductor elements such as a semiconductor imaging element and a semiconductor light emitting element (LED, LD). The present invention relates to a cleaning method, a camera module cleaning method as a semiconductor module, a semiconductor module manufacturing method using the semiconductor module cleaning method, and a camera module manufacturing method using the camera module cleaning method.

   Currently, various electronic devices equipped with camera modules are provided. As a configuration of a general camera module, a configuration including a substrate, an image sensor provided thereon, and a lens disposed above the image sensor is known.

  FIG. 14 is a longitudinal sectional view showing an example of the configuration of the main part of a conventional general camera module.

  As shown in FIG. 14, a conventional general camera module 100 includes a substrate 101, an image sensor 103 die-bonded on the substrate 101 with a die bond material 102, a terminal 104 formed on the substrate 101, and an image sensor. The metal wire 105 wire-bonded between the electrode section on the substrate 103 and the terminal 104 on the substrate 101, the lens barrel 107 including the lens 106 so as to be disposed above the image pickup device 103, and the lens barrel 107 on the upper side The lens holder 109 that seals the image sensor 103 and the terminal 104, the lower end of which is fixed on the substrate 101 with an adhesive 108 and is connected to the metal wire 105, and the inner central step of the lens holder 109. It is stretched and the lower end is fixed with adhesive 110, and an infrared (IR) cut filter 111 is formed on the surface. And a glass lid 112.

  Next, a method for assembling the conventional camera module 100 having the above configuration will be described.

  First, the image sensor 103 is bonded to the substrate 101 with the die bond material 102.

  Next, the electrode portion of the image sensor 103 and the terminal 104 of the substrate 101 are connected by a metal wire 105.

  Thereafter, in this camera module 100, a glass lid 112 with an infrared (IR) cut filter 111 is stretched over the central step on the inner surface of the lens holder 109 and adhered with an adhesive 110 from the back side.

  Subsequently, the lens barrel 107 is accommodated in the upper portion, and the lower end portion of the lens holder 109 having the glass lid 111 with the infrared (IR) cut filter 110 fixed to the lower position thereof is bonded to the substrate 101. And it adheres on the board | substrate 101 in the state which covered the terminal 104 and sealed internal space. Thereby, the camera module 100 can be manufactured.

  In addition, the optical element surface is cleaned together with the device processing process using a plasma processing apparatus.

  This is disclosed in Patent Document 1 and will be described with reference to FIG.

  FIG. 15 is a schematic configuration diagram of a conventional plasma processing apparatus 200 disclosed in Patent Document 1. In FIG.

  In FIG. 15, a conventional plasma processing apparatus 200 includes a processing chamber 201 that houses, for example, an optical element surface (lens surface W) of an object to be cleaned, and an exhaust unit 202 that maintains the processing chamber 201 in a reduced pressure or vacuum environment. The gas supply unit 203 for supplying a gas containing oxygen into the processing chamber 201 and the plasma generating means 204a and 204b for converting the gas into plasma using microwaves are converted into plasma. For example, the optical element surface (lens surface W) of the object to be cleaned is cleaned with the gas. As described above, by using the plasma processing apparatus 200, organic contamination on the optical element surface can be effectively cleaned in a short time.

JP 2004-255331 A (Japanese Patent Application No. 2003-50785)

  In the assembly of the above-described conventional camera module 100, the received wafer has adhered foreign matter before opening and attached foreign matter after opening. In the next die-bonding process, when the image sensor 103 is mounted on the substrate 101, dust is generated from the mounting device itself, or is generated from the image sensor 103 itself due to contact with the collet that is adsorbed when the image sensor 103 is transported. There is dust. Furthermore, there is also adhesion of foreign matter floating in the oven when the adhesive is cured. Further, in the next wire bonding step, foreign matter from the transport system when connecting the electrode portion of the image sensor 103 and the terminal 104 of the substrate 101 adheres. Such foreign matters generated in each process are accumulated on the image sensor 103 and attached.

  That is, the adhesion of foreign matter will be described more specifically.

   First, in the semiconductor element receiving process, the accepted semiconductor elements are separated into individual chips by dicing from a predetermined thickness and back surface. In some cases, it is rearranged only to a product (non-defective product) suitable for the specification, and is put in a predetermined case and packaged. In this case, there are some chip defects of several μm, tape residue, and foreign matter adhering to the packaging, which are generated by dicing.

  Next, when the image sensor 103 is transported onto the substrate 101 in the die bonding step, the image sensor 103 is brought into contact with the transport collet to be attracted thereto, and then the image sensor 103 is attracted by the collet. In some cases, the periphery of the image sensor 103 may be chipped due to an impact when placed at a predetermined position on the substrate 101. The chipped particles may adhere on the surface of the image sensor 103.

  Thereafter, in an oven process, in order to evaporate the organic components of the die bond material 102 in order to increase the adhesion between the image sensor 103 and the substrate 101, the oven is placed in an oven in a nitrogen atmosphere heated to a predetermined temperature. At this time, due to the airflow for controlling the atmosphere in the oven to a constant level, foreign matter attached to the substrate 101, the image sensor 103, the own tool for conveyance, etc., moves and adheres to the pixels in the image pickup area of the image sensor 103. There is a case.

  Subsequently, when the electrode part of the image sensor 103 and the terminal 104 on the substrate 101 are connected by the metal wire 105 in the wire bonding step, dust may be generated from the movement between the apparatuses and the transport system.

  Further, when the lower end portion of the lens holder 109 on which the glass lid 112 is mounted is adhered on the substrate 101 with the adhesive 108 in the holder mounting step, the space containing the image sensor 103 is sealed inside, The foreign matter confined in can not be removed from the imaging region of the image sensor 103.

  These attached foreign substances move onto the image sensor 103 when the lens holder 109 to which the glass lid 112 with the infrared (IR) cut filter 111 is fixed is mounted on the substrate 101 and the image sensor 103 is enclosed inside. At the time of imaging, black scratches (patterns) appear on the image. If the adhering foreign matter gets on the imaging area of the image sensor 103, the camera function on the screen is not satisfied.

  In this way, in the camera module 100, the foreign matter on the sensor surface of the image sensor 103 prevents the light from entering, and thus appears as a black spot in the image. Therefore, the quality is poor from the viewpoint of product shipment quality and process yield. It is necessary to reduce foreign matter.

  For this reason, it is necessary to completely remove the foreign matter adhering in the previous steps immediately before sealing the inside containing the image sensor 103 with the lens holder 109.

  Conventionally, for each process, a dust booth is installed in a clean booth to prevent foreign material from entering, a dust duster is installed, airflow is controlled, and dust is trapped at a place other than the image sensor. In addition, in order to prevent dust generation or the like due to contact with the apparatus or movement during transport of products, measures have been taken to make the material or structure non-dusting.

  In addition, as a foreign matter removing means, cleaning with pure water is being reviewed from the viewpoint of cost, environment, influence on materials used, and the like.

  The material of the chip surface of the image sensor 103 is different for each company, but when a hydrophobic material is used, as shown in FIG. 16, the water droplet 113 has a spherical shape due to the surface tension on the sensor surface of the image sensor 103. As a result, the surface of the image sensor 103 rolls on the chip surface or the contact area of the water droplet 113 with the chip surface is significantly reduced, and the water droplet 113 is scattered from the surface of the image sensor 103 chip. A situation occurs in which the cleaning effect cannot be obtained.

  Furthermore, since the surface of the chip of the image sensor 103 repels the water droplet 113, the foreign matter once removed is likely to be reattached, or it may cause a dry defect or a water mark. In short, in the case of a chip with a hydrophobic surface, the wetting and spreading of water is poor, the removal effect due to the lateral water flow is reduced, the water film does not remain on the chip surface, and foreign matter easily reattaches, and the water drainage is poor. Drying performance decreases.

  Further, in the cleaning process of the optical element surface using the above-described conventional plasma processing apparatus disclosed in Patent Document 1, in reality, as the resolution is improved, the pixel size is reduced, and the image on the imaging region is increased. Therefore, it is not possible to cope with the prevention of adhesion of foreign matter on the microlens of the image sensor. The pixel size of the microlens is a very small size of 3 μm or less at several micron squares, which is difficult with the conventional method.

  The present invention solves the above-mentioned conventional problems. Before a semiconductor element such as an image pickup element is sealed in a process, the pure water cleaning performance and the drying performance are improved and the substrate and the semiconductor element are improved. Semiconductor module cleaning method, camera module cleaning method as semiconductor module, semiconductor which can improve the quality and yield by removing foreign matters such as micro-order foreign matter that exist in the product and suppressing or preventing reattachment It is an object of the present invention to provide a semiconductor module manufacturing method using a module cleaning method and a camera module manufacturing method using a camera module cleaning method.

  The semiconductor module cleaning method of the present invention is a semiconductor module cleaning method for cleaning a semiconductor module in which a semiconductor element is mounted on a substrate. At least the element surface of the substrate and the semiconductor element on the substrate is subjected to a hydrophilic treatment. A hydrophilization treatment step and a pure water washing treatment step of washing at least the device surface with pure water after improving the water wettability of the device surface in the hydrophilization treatment step. The objective is achieved.

  The method for cleaning a camera module of the present invention is the method for cleaning a semiconductor module of the present invention, wherein the surface of the image sensor is made of a hydrophobic material before the image sensor as the semiconductor element is sealed or sealed with a holder. Even if it exists, it hydrophilizes before pure water washing | cleaning, and improves the wettability of the surface of this element, and the said objective is achieved by it.

Preferably, in the camera module cleaning method of the present invention, the hydrophilic treatment is at least one of plasma treatment, surface treatment with ultraviolet light / O ₃ , and surface treatment with ultraviolet light having a short wavelength of 172 nm or less, Foreign matter adhering to at least the element surface of the substrate and the image pickup element thereon is removed by the pure water cleaning after the crystallization treatment.

  The semiconductor module manufacturing method of the present invention is the semiconductor module manufacturing method using the semiconductor module cleaning method of the present invention, wherein the substrate is subjected to pure water cleaning after the hydrophilic treatment and the imaging on the substrate. The device has a sealing or sealing treatment step of sealing or sealing the element with a predetermined member, whereby the above object is achieved.

  The camera module manufacturing method of the present invention is the camera module manufacturing method using the camera module cleaning method of the present invention, wherein the substrate is subjected to pure water cleaning after the hydrophilic treatment and the imaging on the substrate. The device has a sealing or sealing process in which the element is sealed or sealed with the holder, whereby the above object is achieved.

  With the above configuration, the operation of the present invention will be described below.

  In the present invention, in a semiconductor module cleaning method for cleaning a semiconductor module in which a semiconductor element is mounted on a substrate, a hydrophilic treatment step of hydrophilizing at least the element surface of the substrate and the semiconductor element thereon And a pure water cleaning treatment step of cleaning at least the device surface with pure water after improving the wettability of water on the device surface in the hydrophilization treatment step.

  As a result, before semiconductor elements such as imaging elements and light emitting elements are sealed or sealed in the process, the pure water cleaning performance and the drying performance are improved, and the micro-orders on the substrate and the semiconductor elements are reduced. It is possible to improve quality and yield by reliably removing foreign substances such as foreign substances and suppressing or preventing reattachment. In the case where the semiconductor element is an image sensor, it is possible to remove black flaws due to foreign matters on the image by imaging and project an object captured by the image sensor more clearly on the image.

  As described above, according to the present invention, before the semiconductor element such as the image pickup element is sealed in the process, the microorder existing on the substrate and the semiconductor element is improved in order to improve the pure water cleaning performance and the drying performance. It is possible to improve quality and yield by reliably removing foreign matters such as fine foreign matters and suppressing or preventing reattachment. In the case where the semiconductor element is an image sensor, black flaws caused by foreign matters on the image can be removed by imaging, and an object captured by the image sensor can be projected more clearly on the image.

It is a longitudinal cross-sectional view which shows the principal part structural example of the camera module in Embodiment 1 of this invention. It is a top view which shows typically the principal part structure of the image pick-up element of FIG. It is a principal part longitudinal cross-sectional view of the imaging area in the image sensor of FIG. It is a block diagram which shows the flow of each process in the manufacturing method of the camera module of FIG. It is a top view which shows typically the ring sticking state of the several chip | tip on the adhesive tape for demonstrating the dicing and expanding process of the wafer in the manufacturing method of the camera module of FIG. It is a longitudinal cross-sectional view which shows a mode that the board | substrate and image pick-up element for demonstrating the die-bonding process and die-bonding curing process in the manufacturing method of the camera module of FIG. 1 were adhere | attached. It is a longitudinal cross-sectional view which shows a mode that the board | substrate and imaging device for demonstrating the wire bonding process in the manufacturing method of the camera module of FIG. 1 were wired. It is a longitudinal cross-sectional view for demonstrating the plasma processing process in the manufacturing method of the camera module of FIG. (A) is a figure which shows an example of the spherical water drop on the hydrophobic chip | tip surface, (b) is a figure which shows an example of the lens-shaped water drop on the surface where the chip | tip surface became hydrophilic after plasma processing. It is an apparatus figure which carries out the pure water washing | cleaning by the overflow for the foreign material on an image pick-up as a pure water immersion washing process process in the manufacturing method of the camera module of FIG. It is an apparatus figure which carries out the pure water washing | cleaning of the foreign material on an image pick-up element by centrifugation as a two-fluid spin washing process by the pure water in the manufacturing method of the camera module of FIG. It is a schematic diagram for demonstrating the two-fluid spin cleaning process of FIG. It is a perspective view which shows a mode that a lens holder is mounted in the process board | substrate part after a pure water washing process as a holder mounting process in the manufacturing method of the camera module of FIG. It is a longitudinal cross-sectional view which shows the example of a principal part structure of the conventional general camera module. It is a schematic block diagram of the conventional plasma processing apparatus currently disclosed by patent document 1. FIG. FIG. 5 is a schematic diagram showing a state in which water droplets become spherical under the influence of surface tension when the chip surface of the image sensor is a hydrophobic material.

  Hereinafter, referring to the drawings, Embodiments 1 to 3 in a camera module cleaning method as a semiconductor module cleaning method of the present invention and a camera module manufacturing method as a semiconductor module manufacturing method using the semiconductor module cleaning method will be described. However, it explains in detail. In addition, each thickness, length, etc. of the structural member in each figure are not limited to the structure to illustrate from a viewpoint on drawing preparation.

(Embodiment 1)
FIG. 1 is a longitudinal sectional view showing an example of the configuration of the main part of a camera module in Embodiment 1 of the present invention.

  In FIG. 1, in the camera module 1 of the first embodiment, an image sensor 4 is die-bonded on a substrate 2 with a die bond material 3, and a metal wire 6 (metal) is connected between the electrode portion of the image sensor 4 and a terminal 5 on the substrate 2. Wire bonding using a gold wire as a wire). On the other hand, a lens holder 7 is provided to cover the upper side of the image sensor 4 connected to the terminal 5 and the metal wire 6 on the substrate 2. The lower end portion 7a of the lens holder 7 is fixed on the substrate 2 with an adhesive 8 so that the inside is sealed. A lens barrel 10 incorporating a lens 9 is provided at an upper portion in the lens holder 7 so as to correspond to the upper side of the image sensor 4. Further, both ends of the glass lid 12 on which the infrared (IR) cut filter 11 is formed on the surface of the lens holder 7 are fixed by an adhesive 13 so as to be spanned over the inner surface central step portion of the lens holder 7.

  With the above configuration, the light incident from the central opening 14 of the lens barrel 10 of the camera module 1 passes through the IR cut filter 11 and the glass lid 12 from the lens 9 and reaches the image sensor 4, and the incident light is transmitted. The image is picked up by the image pickup device 4 and converted into an electric signal.

  FIG. 2 is a plan view schematically showing the configuration of the main part of the image sensor 4 of FIG.

  In FIG. 2, the imaging element 4 is provided with an imaging region 41 (pixel unit) in the center thereof, and a plurality of light receiving units (photodiodes) are arranged in a matrix in the imaging region 41, and the peripheral region of the imaging region 41 A peripheral control circuit unit for controlling data reading and the like and various electrode units 43 are arranged at 42. The subject light image formed by the lens 9 is converted into an electrical signal for each light receiving portion of the imaging region 41 of the imaging device 4. In other words, the image pickup element 4 is a sensor device that performs photoelectric conversion on incident light incident from the lens 9 and picks up an image. The imaging device 4 has a light receiving plane in which a plurality of light receiving portions are arranged in a matrix.

  As the imaging device 4, for example, a charge-coupled device (CCD) or a complementary metal-oxide semiconductor (CMOS) sensor IC (Integrated circuits) can be used. The image sensor 4 is mounted on the substrate 2, and the image sensor 4 has a size that can be accommodated in the lens holder 7 of the camera module 1.

  FIG. 3 is a longitudinal sectional view of a main part of the imaging region 41 in the imaging device 4 of FIG.

  In FIG. 3, a CMOS image sensor will be described as an example of the image sensor 4. In the imaging region 41 of the imaging element 4, a photodiode 412 (PD) is formed as a light receiving portion (photoelectric conversion portion) constituting each pixel as a surface layer of the semiconductor substrate 411. Adjacent to the photodiode 412 is provided a charge transfer portion (not shown) of a charge transfer transistor for transferring signal charges to the floating diffusion portion. On the charge transfer portion (not shown), a gate electrode (not shown) as an extraction electrode is provided via a gate insulating film. Further, the signal charge transferred to the floating diffusion portion for each photodiode 412 (PD) is voltage-converted, amplified in accordance with the converted voltage, and read out as an imaging signal for each light-receiving portion.

  Above the gate electrode (not shown), a first wiring 414 is formed on the first insulating film 413 as a circuit wiring portion of the readout circuit, and a second insulating film 415 is formed thereon, and A second wiring 416 is formed thereon, and similarly, a third insulating film 417, a third wiring 418, and a fourth insulating film 419 are formed thereon in this order.

  Further, a planarizing film 421 is provided on the fourth insulating film 419 with an interlayer insulating film 420 interposed therebetween, and a color arrangement of each color of R, G, B arranged for each photodiode 412 (PD) is provided thereon. A (Bayer color array) color filter 422 is formed. A protective film 423 is formed on the color filter 422, and a microlens 424 for condensing light to each photodiode 412 (PD) is formed thereon.

  In recent years, with the improvement in performance of electronic devices including the camera module 1, improvement in the function of the camera module 1 itself is also required. One of the functional improvements of the camera module 1 is to reduce the size of the microlens 424 by narrowing the interval between the photodiodes 412 (PD) of the image pickup device 4 to increase the resolution. When the microlens 424 of the image sensor 4 is reduced, there arises a problem that minute foreign matters on the image sensor 4 that have not been detected until now appear on the image pickup screen on the image sensor 4. As a method for solving this problem, there is a method corresponding to image processing or the like. However, this has limitations such as the number of image processing and area, and it does not solve the essential problem. However, the cleaning method of the first embodiment, which will be described in detail later, can contribute to the improvement of the function of the camera module 1.

  Here, a manufacturing method of the camera module 1 including the cleaning method of the first embodiment having the above-described configuration will be described in detail with reference to FIGS.

  FIG. 4 is a block diagram showing the flow of each process in the manufacturing method of the camera module 1 of FIG.

  In FIG. 4, the manufacturing method of the camera module 1 according to the first embodiment includes a wafer dicing and expanding step S <b> 1 (FIG. 5) showing a chip singulation step for dividing into a plurality of imaging elements 4, and a substrate 2. A die bonding step S2 (FIG. 6) for connecting the image pickup device 4, a die bond curing step S3 (FIG. 6) showing an oven step for heating the substrate 2 and the image pickup device 4 thereon, and wiring between the substrate 2 and the image pickup device 4. A wire bonding step S4 (FIG. 7), a plasma treatment step S5 showing a hydrophilic treatment step for hydrophilizing the surface of the treated substrate portion after the wire bond step S4, and a treated substrate portion surface having a hydrophilic surface. A pure water cleaning process S6 for performing a pure water cleaning process, and a holder mounting process S7 for mounting or closing the lens holder 7 on the processing substrate portion subjected to the pure water cleaning process. It is.

  In the manufacturing method of the camera module 1 according to the first embodiment, after performing the plasma treatment step S5 of the surface hydrophilization treatment before the holder mounting step S7 (here, after the wire bonding step), the pure water cleaning treatment step S6 is performed. By carrying out the treatment, it is possible to greatly improve the cleaning performance and the drying performance of the pure water by the surface hydrophilization treatment, and it is possible to more reliably prevent foreign matters including micro foreign matters existing on the substrate 2 and the image sensor 4. It is possible to significantly improve the quality and yield by suppressing reattachment.

  FIG. 5 is a plan view schematically showing a state where a plurality of chips are attached to the adhesive tape for explaining the wafer dicing and expanding step S1 in the method for manufacturing the camera module 1 of FIG. In short, FIG. 5 shows a ring attachment state of the image pickup element 4 obtained by polishing and dicing the back surface of the wafer.

  As shown in FIG. 5, after the back surface of the wafer is polished to a predetermined thickness, it is diced from the wafer affixed onto the adhesive tape 44 into a lattice shape and separated into a plurality of chips. In each of the image pickup devices 4 of a plurality of chips cut on the adhesive tape 44, the plurality of chips are arranged by expanding the adhesive tape 44 stretched on the wafer ring 45 evenly to widen the cutting gap of the lattice dicing line. .

  FIG. 6 is a longitudinal sectional view showing a state in which the substrate 2 and the image pickup device 4 are bonded for explaining the die bonding step S2 and the die bonding curing step S3 in the method for manufacturing the camera module 1 of FIG.

  In FIG. 6, each of the image pickup elements 4 of a plurality of chips cut and expanded on the adhesive tape 44 is transferred to a predetermined position on the substrate 2 by a transfer collet, and the image pickup element 4 is transferred onto the substrate 2 by the die bonding material 3. (Die bonding step S2). Due to an impact when the image pickup device 4 is placed on the substrate 2 by being attracted by the collet, there are cases in which the periphery of the image pickup device 4 is chipped and the chipped particles adhere to the image pickup surface of the image pickup device 4.

  As described above, after the image pickup device 4 is bonded to one surface of the substrate 2 with the die bond material 3, the chip die bond substrate portion on which the image pickup device 4 is mounted on the substrate 2 is placed in an oven for adhesion enhancement. Drying is performed (die bond curing step S3).

  In order to evaporate the organic component of the die bond material 3 in order to increase the adhesion between the image sensor 4 and the substrate 2, it is placed in a heated nitrogen atmosphere. At this time, foreign matter attached to the substrate 2, the image sensor 4, the transport tool itself, and the like may move and adhere to the image pickup area of the image sensor 4 due to the airflow for controlling the atmosphere in the oven uniformly. is there.

  Here, in order to remove the foreign matter adhering to the surface of the image sensor 4, a plasma process and a pure water cleaning process which will be described later may be performed. However, in the first embodiment, the plasma process is performed after the next wire bonding process. And pure water cleaning treatment.

  FIG. 7 is a longitudinal sectional view showing a state in which the substrate 2 and the image sensor 4 are wired for explaining a wire bonding step in the manufacturing method of the camera module 1 of FIG.

  In FIG. 7, a wire bond is made between the electrode portion 43 of the image sensor 4 and the terminal 5 of the substrate 2 with a metal wire 6 (a gold wire as a metal wire). After the wire bonding step S4, the processing substrate portion 15 in which the substrate 2 and the image sensor 4 are wired is manufactured. During this wire bonding, there is a case where dust is generated from the movement and transfer system between apparatuses.

  Here, in order to remove foreign matter adhering to the chip surface of the image pickup element 4, a plasma treatment for hydrophilization described later and a cleaning treatment with pure water are performed.

  FIG. 8 is a longitudinal sectional view for explaining a plasma processing step in the manufacturing method of the camera module 1 of FIG. FIG. 8 shows the imaging element 4 and the plasma state on the imaging region surface.

  In FIG. 8, in this plasma processing method, the processing substrate unit 15 processed up to the wire bonding step is transferred into the chamber of the plasma processing apparatus. This plasma processing may be performed immediately after the die bonding step, but as in the first embodiment, the plasma processing step is performed immediately before the wire bonding step immediately before the lens holder mounting step S7 for mounting the lens holder 9. Is preferred.

  The plasma processing apparatus includes an exhaust section that maintains a reduced pressure or vacuum environment, a gas supply section that supplies a certain amount of inert gas, oxygen, and a mixed gas thereof into a chamber (processing chamber), and plasmas the gases. And a plasmatizing device.

  The plasma processing conditions at this time are as follows: temperature / pressure is normal temperature to 100 degrees Celsius / 1 to 760 Torr, working gas / flow rate is Ar gas / 1 to 100 ml / min, RF power is 100 W to 800 W, The processing time was 1 to 120 seconds.

  FIG. 9A is a diagram showing an example of a spherical water droplet on the hydrophobic chip surface, and FIG. 9B is a diagram showing an example of a lens-shaped water droplet on the chip surface that has become hydrophilic after the plasma treatment. . FIG. 9A and FIG. 9B show pure water dripping states before and after plasma irradiation on the chip surface of the imaging region 41 of the imaging device 4.

  In FIG. 9A, water droplets are repelled on the chip surface, whereas in FIG. 9B, no water droplets are repelled on the chip surface.

  The cleaning process is performed only by the plasma process, and the foreign matter on the image sensor 4 is removed. The chip surface (the surface of the imaging region 41) of the imaging element 4 subjected to the plasma treatment is modified from a hydrophobic surface to a hydrophilic surface (small unevenness) like a chip surface 46b shown in FIG. 9B. Even in the confirmation of the wettability of the drop test with pure water, as shown in FIG. 9 (b), the lens-like liquid droplet 47 (lens-like water drop) familiar to the chip surface 46b with good wettability was obtained. ), The water droplet 48 becomes spherical due to the influence of the surface tension on the hydrophobic chip surface 46a, and the contact angle between the chip surface 46a of the image sensor 4 and the water droplet 48 (spherical water droplet) is several tens of degrees. However, in the case of the lenticular droplet 47 on the hydrophilic surface (chip surface 46b), the contact angle between the chip surface 46b and the water droplet 47 was greatly reduced to several degrees.

  Next, after the surface of the chip is hydrophilized by plasma treatment, cleaning with pure water is performed. As pure water cleaning, pure water immersion cleaning in FIG. 10 and pure water in FIG. The fluid spin cleaning process will be described.

  FIG. 10 is an apparatus diagram for cleaning the foreign matter on the image pickup device with pure water by overflow as a pure water immersion cleaning process in the manufacturing method of the camera module 1 of FIG.

  In FIG. 10, the pure water immersion cleaning method using the chip surface 46 b of the imaging element 4 whose surface has been modified to be hydrophilic is filled with pure water 22 in the tank 21 using the pure water immersion cleaning processing apparatus 20. In the pure water 22 of the tank 21, the processed substrate portion 15 that has been processed up to the wire bonding step and wire-bonded is immersed as an object to be cleaned. A plurality of wire-bonded processing substrate portions 15 are accommodated in a standing state in a container 24 that allows pure water 22 to enter and exit.

  The treated substrate unit 15 after wire bonding is immersed in the pure water 22 of the tank 21, so that foreign matters on the surface of the imaging device 4 of the processed substrate unit 15 float on the surface of the pure water 22, Foreign matter can be discharged by causing the water 22 to overflow into the adjacent tank 23. A processing object (processing substrate unit 15) is immersed in a tank 21 of pure water 22 where supply / drainage of pure water 22 is repeated for a predetermined time, and then lifted, and a drying processing apparatus using an oven or centrifugation. The drying process is performed using

  FIG. 11 is an apparatus diagram for cleaning pure water by centrifugation of foreign matter on the image sensor as a two-fluid spin cleaning process using pure water in the method for manufacturing the camera module of FIG.

  In FIG. 11, in the two-fluid spin cleaning processing apparatus 30, the processing substrate unit 15, which is bonded to the image pickup device 4 on the substrate 2 and wire-bonded, is attached downward on the turntable 31, and the turntable 31 is attached to the processing substrate. While rotating together with the portion 15, pure water 33 is sprayed from the nozzle 32 from below and the nozzle 32 is repeatedly reciprocated in the radial direction A for a predetermined time. Thereafter, a drying process is performed using an oven or a drying processing apparatus using centrifugation.

As an example of centrifugal cleaning / drying conditions (nozzle / equipment piping with a filter of 2 μm or less), the rotation speed of the turntable 31 is 400 to 1200 rpm in this pure water cleaning process and 400 to 1200 rpm in the drying process. The pure water cleaning process and the drying process can be performed in the same apparatus. The pure water the amount of water in the pure water washing process 200-400cm ³ / min, using AIR (air) / _{N 2} (nitrogen gas) Works deviation or a mixture gas in a dry process. The cleaning time is 90 sec or more and the drying time is 60 sec or more.

  FIG. 12 is a schematic diagram for explaining the two-fluid spin cleaning process of FIG.

  In FIG. 12, the pure water 33 ejected from the nozzle 32 reaches the foreign substance 34 on the chip surface 46 b of the processing substrate portion 15 that has been modified to hydrophilicity (small unevenness) by plasma processing and has improved wettability. After that, a horizontal jet water flow 36 spreads around the foreign material 34 on the chip surface 46b. As a result, the foreign matter 34 on the chip surface 46b is more reliably removed from the chip surface 46b.

  Next, the holder mounting step S7 will be described.

  FIG. 13 is a perspective view showing a state in which the lens holder 9 is mounted on the processing substrate portion 15 after the pure water treatment as the holder mounting step S7 in the method for manufacturing the camera module 1 of FIG.

  In FIG. 13, the lens holder 9 is mounted on the substrate 2. That is, the lower end portion of the lens holder 9 in which the lens barrel 10 is accommodated is attached to the substrate 2 on the image pickup device 4 (the processing substrate portion 15 modified to be hydrophilic (micro unevenness) by plasma processing). In a state where the internal space is sealed so as to cover, the substrate 2 is adhered and fixed. Thereby, the camera module 1 is manufactured.

  In the holder mounting process, the space in which the image sensor 4 is contained is sealed, and no foreign matter is confined therein, so that the foreign matter is not placed again on the imaging region of the image sensor 4.

  As described above, according to the first embodiment, as a method of cleaning the camera module 1, before the imaging element 4 as a semiconductor element is sealed or sealed with the lens holder 7, the chip surface (element surface) of the imaging element 4 is changed. Even a hydrophobic material is hydrophilized before washing with pure water to improve the wettability of the element surface. The manufacturing method of the camera module 1 using the cleaning method of the camera module 1 is to seal or seal the substrate 2 and the image pickup device 4 on the substrate 2 cleaned with pure water after the hydrophilic treatment with the lens holder 7. And a sealing or sealing process.

  Thereby, before the image pickup device 4 is sealed in the process, the pure water cleaning performance and the drying performance are improved to remove foreign matters such as micro-order fine foreign matter existing on the substrate 2 and the image pickup device 4. It can be reliably removed and reattachment can be suppressed or prevented to improve quality and yield, and black flaws on the image can be removed by imaging, and the object captured by the image sensor 4 can be seen more clearly on the image. it can.

  In the first embodiment, first, it is possible to prevent a short circuit and a leak due to a metallic foreign object due to the contact between the imaging element 4 and the substrate 2. That is, when electrically connecting the terminal 5 of the substrate 2 and the electrode portion 43 of the image sensor 4 by wire bonding using a metal wire (metal wire 6), conductor foreign matters and insulating foreign matters existing in the connection portion in advance are removed. This is because it is removed.

  In addition, a subject captured as an image can be clearly displayed. That is, since the light that has entered from the opening 14 of the lens barrel 10 reaches the image element 4 and the foreign matter on the microlens 424 is removed, the light is not scattered or weakened. Does not affect.

  Although not particularly described in the first embodiment, in the case of the plasma treatment of the inert gas, the adhered foreign matter is peeled off from the chip surface of the image sensor 4 without causing a chemical reaction by the excited ions. In addition, in a mixed gas of oxygen, a reaction of oxygen ions is added, including a kind of catalytic reaction, and if there is an organic matter, it can be removed more easily as an oxide. Furthermore, by adding pure water cleaning to the surface-modified surface (hydrophilic, rough surface), foreign matter scattered and attached around the chip of the image sensor 4 is also removed, and the probability of reattachment is reduced. , Foreign matter can be removed. In other words, foreign matters can be removed by plasma treatment, and further, the surface of the chip of the image sensor 4 is modified (hydrophilic treatment and surface roughening), so that the wettability of water in water washing is further improved, and the image sensor 4 Foreign matter on the chip surface can be better removed. Therefore, it is possible to avoid the problem that the foreign matter adhering to the image sensor 4 is reflected in the imaging.

  Therefore, in the first embodiment, in the manufacturing process of the camera module 1, the imaging device 4 is bonded to the substrate 2 with the lens holder 4 with the glass lid 12, and the process related to the process until the imaging device 4 is sealed inside is described. In the case of dust, it is a measure against foreign matter when dust is generated from the apparatus and members, and it is possible to prevent short circuits and leaks by removing foreign matter that adheres to the portion where the image sensor 4 and the terminal 5 are in contact. Furthermore, by reducing or eliminating foreign matter existing on the chip surface of the image sensor 4, it is possible to more reliably solve the problem that unnecessary foreign matter is reflected from the image during imaging.

(Embodiment 2)
In the first embodiment, the case where the plasma treatment is used as the hydrophilic treatment has been described. In the second embodiment, the case where a surface treatment using ultraviolet rays / O ₃ is used as the hydrophilic treatment will be described.
In order to solve the problem of the present invention, in the process of the camera module of the second embodiment, before the imaging device 4 is sealed or sealed with the lens holder 7 in which the IR cut filter 11 is incorporated, a hydrophilic treatment is performed. By performing the surface treatment with ultraviolet rays (UV) / ozone (O ₃ ), foreign matters adhering to the image pickup element 4 after the hydrophilic treatment can be better removed by pure water cleaning.

When the hydrophilization treatment described above is an O ₃ treatment, ozone (O ₃ ) is decomposed into oxygen by irradiation with ultraviolet rays, and oxygen is adsorbed and occluded on the chip surface of the image sensor 4 to modify the chip surface. By adding pure water cleaning to this surface treatment, the adhered foreign matter can be more reliably removed. As a result, it is possible to more reliably avoid the problem that foreign matters attached to the chip surface of the image pickup element 4 are reflected in the image pickup.

(Embodiment 3)
In the first embodiment, the case where the plasma treatment is used as the hydrophilic treatment is described. In the second embodiment, the case where the surface treatment using ultraviolet rays / O ₃ is used as the hydrophilic treatment, but in the third embodiment, the surface treatment is performed. The case where surface treatment with ultraviolet rays having a short wavelength of 172 nm or less is used as the hydrophilic treatment will be described.
In order to solve the problem of the present invention, in the process of the camera module of the third embodiment, the hydrophilic treatment is short before the imaging device 4 is sealed or sealed with the lens holder 7 incorporating the IR cut filter 11. By performing the surface treatment with ultraviolet rays (UV) having a wavelength of 172 nm or less, the foreign matter adhering to the imaging element 4 can be more reliably washed and removed by pure water washing after the hydrophilic treatment.

In the case where the hydrophilization treatment described above is a UV treatment with a short wavelength of 172 nm or less, pure water is applied to the surface (surface roughening) that has been further hydrophilized by UV irradiation with a short wavelength of 172 nm or less to improve the surface. By adding cleaning, the adhered foreign matter can be better removed.
As a result, it is possible to avoid a problem in which foreign matter adhering to the image sensor 4 is reflected during imaging.

As the camera module 1 of the above-described first to third embodiments, the image sensor 4 is attached to the ceramic or glass epoxy substrate 2 with a die bond material 3 as an adhesive, and a wire between the image sensor 4 and the terminal 5 is provided. In the camera module 1 having a structure in which a lens holder 7 in which a lens 9 and an IR cut filter 11 are assembled is pasted on the image sensor 4, the lens holder in which the IR cut filter 11 is incorporated. 7 before the image pickup device 7 is sealed, even if the chip surface of the image pickup device 4 is a hydrophobic material, plasma treatment (inert gas) is performed as a hydrophilic treatment (surface roughening treatment) before washing with pure water. , Oxygen, or inert gas + oxygen), surface treatment with ultraviolet light / O ₃ , and surface treatment with ultraviolet light having a short wavelength of 172 nm or less. Therefore, the water wettability of the chip surface of the image sensor 4 can be improved.

  If the image pickup device 4 is in a state until the lens holder 7 incorporating the IR cut filter 11 is mounted on the substrate 2 and the image pickup device 4 is sealed or sealed, the foreign matter on the chip surface of the image pickup device 4 In particular, the foreign matter attached or fixed on the microlens 424 directly modifies the surface of the imaging region of the image sensor 4 with respect to the foreign matter (hydrophilic treatment and surface roughening treatment). The wettability is improved, and the pure water has more contact with the foreign matter on the image pickup device 4, whereby the foreign matter can be more reliably removed. As a result, it is possible to avoid a problem in which foreign matter adhering to the chip surface of the image pickup element 4 is reflected in the image pickup.

In order to solve the problems of the present invention, in the camera module processes of the first to third embodiments, a hydrophilic treatment is performed before the imaging device 4 is sealed or sealed with the lens holder 7 in which the IR cut filter 11 is incorporated. By any of plasma treatment (inert gas, oxygen, or inert gas + oxygen), surface treatment with ultraviolet rays / O ₃ and surface treatment with ultraviolet rays having a short wavelength of 172 nm or less, Foreign matter adhering to the image sensor 4 can be efficiently removed by washing with pure water.

In the first to third embodiments, as the hydrophilization treatment (surface roughening treatment), plasma treatment (inert gas, oxygen, or inert gas + oxygen), surface treatment with ultraviolet light / O _3, and short wavelength of 172 nm or less. Although the water wettability of the chip surface of the image sensor 4 is improved by any one of the surface treatments using ultraviolet rays, the plasma treatment is not limited thereto, and the treatment is a hydrophilic treatment (surface roughening treatment). (Inert gas, oxygen, or inert gas + oxygen), surface treatment with ultraviolet light / O ₃ and surface treatment with ultraviolet light having a short wavelength of 172 nm or less, wetting of water on the chip surface of the image sensor 4 Can be improved. In short, in addition to plasma treatment, surface treatment with ultraviolet light / O ₃ and surface treatment with ultraviolet light having a short wavelength of 172 nm or less can be carried out, and even a material that is less effective for hydrophilic treatment is more easily hydrophilic. Processing can be performed.

  Although not specifically described in the first to third embodiments, the method for manufacturing the camera module 1 according to the first to third embodiments can be used as a method for producing camera parts. The electronic device of the present invention can be widely used as various electronic devices having a camera function such as a camera and a camera-equipped mobile phone.

  For example, a digital camera such as a digital video camera and a digital still camera, or an image such as a surveillance camera, in which the camera module 1 manufactured by the method for manufacturing the camera module 1 according to the first to third embodiments is used as an image input device in an imaging unit. Electronic devices such as an input camera, a scanner device, a facsimile device, a television phone device, and a camera-equipped mobile phone device can be obtained. In this case, it is possible to obtain a high-quality electronic device that reliably avoids a problem that foreign matter is reflected in imaging.

  In the first to third embodiments, the cleaning method of the camera module 1 and the manufacturing method of the camera module 1 using the same are used. However, the present invention is not limited to this, and the contents of the first to third embodiments are not limited to the above. Instead, the semiconductor module may be applied to a semiconductor element such as a semiconductor light emitting diode element (LED element) or a laser element (LD element), and a semiconductor module cleaning method and a semiconductor module manufacturing method using the semiconductor module may be applied. it can.

  Also in this case, before the semiconductor element such as the LED element or the LD element is sealed in the process, the micro-order existing on the substrate 2 and the semiconductor element in order to improve the pure water cleaning performance and the drying performance. It is possible to achieve the object of the present invention, which can reliably remove foreign matters such as fine foreign matter and suppress reattachment to improve quality and yield.

  In this case, the semiconductor module cleaning method is a method of cleaning a semiconductor module in which a semiconductor module having a semiconductor element mounted on a substrate is cleaned. In the semiconductor module cleaning method, at least an element surface of the substrate and the semiconductor element thereon is hydrophilized. A treatment step and a pure water cleaning treatment step of cleaning at least the device surface with pure water after improving the wettability of the device surface with water in the hydrophilization treatment step. As a semiconductor module manufacturing method using this semiconductor module cleaning method, a substrate that has been subjected to hydrophilization treatment and then subjected to pure water cleaning, and an image pickup device thereon are used as predetermined members (sealing or sealing members such as holders and sealing resins). ) In a sealing or sealing process for sealing or sealing.

  As mentioned above, although this invention has been illustrated using preferable Embodiment 1-3 of this invention, this invention should not be limited and limited to this Embodiment 1-3. It is understood that the scope of the present invention should be construed only by the claims. It is understood that those skilled in the art can implement an equivalent range based on the description of the present invention and the common general technical knowledge from the description of specific preferred embodiments 1 to 3 of the present invention. Patents, patent applications, and documents cited herein should be incorporated by reference in their entirety, as if the contents themselves were specifically described herein. Understood.

  The present invention relates to an assembly of a semiconductor device such as a semiconductor imaging device, in the field of a manufacturing method of a camera module having a cleaning step of removing foreign matter on a semiconductor device in a manufacturing process from a die bonding process to an element containment process. Before semiconductor elements such as are sealed in the process, the pure water cleaning performance and drying performance are improved, and foreign substances such as micro-order fine foreign substances existing on the substrate and the semiconductor elements are surely removed. Reattachment can also be suppressed or prevented to improve quality and yield. In the case where the semiconductor element is an image sensor, black scratches on the image can be removed by imaging, and an object captured by the image sensor can be reflected more clearly on the image.

1 Camera module (semiconductor module)
2 Substrate 3 Die bond material 4 Imaging element (semiconductor element)
41 Imaging area (pixel part)
42 Peripheral area 424 Micro lens 43 Electrode portion 44 Adhesive tape 45 Wafer ring 46b Hydrophilic chip surface (element surface)
46a Hydrophobic chip surface (element surface)
47 Lenticular water droplets 48 Spherical water droplets 5 Terminal 6 Metal wire (metal wire)
7 Lens holder (holder)
7a Lower end portion 8, 13 Adhesive 9 Lens 10 Lens barrel 11 Infrared cut filter (IR cut filter)
12 Glass lid (lid)
DESCRIPTION OF SYMBOLS 14 Opening part 15 Processing board | substrate part bonded by wire 20 Pure water immersion cleaning processing apparatus 21 Tank 22 Pure water 23 Next tank 24 Container 30 Two-fluid spin cleaning processing apparatus 31 Turntable 32 Nozzle 33 Pure water 34 Foreign material 35 Horizontal direction Jet stream

Claims (5)

  In a cleaning method of a semiconductor module for cleaning a semiconductor module having a semiconductor element mounted on a substrate, a hydrophilic treatment process for hydrophilizing at least the element surface of the substrate and the semiconductor element thereon, and the hydrophilic treatment A method for cleaning a semiconductor module, comprising: a pure water cleaning process for cleaning at least the surface of the element after improving the wettability of the element surface with water in the process.   2. The semiconductor module cleaning method according to claim 1, wherein the image pickup device as the semiconductor device is sealed or sealed with a holder before the pure water cleaning even if the device surface of the image pickup device is a hydrophobic material. A method of cleaning a camera module, wherein a hydrophilic treatment is performed to improve water wettability of the element surface. In the cleaning method of the camera module according to claim 2, there the hydrophilic treatment plasma treatment, at least one of the surface treatment according to the following ultraviolet surface treatment and short wavelength 172nm by UV / O _3, hydrophilization treatment A method for cleaning a camera module, which removes foreign matter adhering to at least the element surface of the substrate and the imaging element on the substrate by cleaning with pure water.   2. The semiconductor module manufacturing method using the semiconductor module cleaning method according to claim 1, wherein the substrate that has been subjected to the hydrophilization treatment and then subjected to pure water cleaning and the image pickup device thereon are sealed or sealed with a predetermined member. A manufacturing method of a semiconductor module having a sealing or sealing treatment step for stopping treatment.   4. The camera module manufacturing method using the camera module cleaning method according to claim 2 or 3, wherein the substrate that has been subjected to pure water cleaning after the hydrophilization treatment and the image pickup device thereon are sealed with the holder. Or the manufacturing method of the camera module which has the sealing or sealing process process to seal-process.