JP2014148735A - Thin-substrate treatment apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a thin-substrate treatment apparatus capable of preventing the temperature of a thin substrate from being raised.SOLUTION: A sputter device 10 includes film deposition parts 20A, 20B discharging sputter particles Sp from a target 21 to a film substrate S, and an electrostatic chuck 31 cooling the film substrate S. The electrostatic chuck 31 electrically sucks the film substrate S, to which the sputter particles Sp are discharged, so as to cool the film substrate S.

Description

  The technology of the present disclosure relates to a thin substrate processing apparatus that processes the surface of a thin substrate including a printed circuit board and a film substrate.

  In the mounting process of mounting the electronic component on the mounting substrate, an adhesion layer serving as a base of the wiring connected to the electronic component and a seed layer for forming the wiring by plating are formed. For example, a plating method or a sputtering method is used to form each layer (see, for example, Patent Document 1).

JP 2003-197811 A

  By the way, in recent years, with the increase in the density of wiring, the use of a sputtering method rather than a plating method has been studied particularly for forming a seed layer. Furthermore, for the purpose of reducing the weight and thickness of electronic devices, it is being considered to reduce the thickness of the mounting substrate and to adopt a thin film substrate having a thickness of about several tens to several hundreds of μm as the mounting substrate. . A thin substrate such as a printed circuit board or a film substrate has a lower temperature at which the shape of the substrate changes compared to a glass substrate that has been widely used. Therefore, when the adhesion layer or the seed layer is formed by sputtering, the high-energy sputtered particles reach the thin substrate, so that the temperature of the thin substrate is increased to such an extent that the shape of the thin substrate changes. . Such problems are not limited to the case where a thin film is formed on a thin substrate by sputtering. For example, surface treatment such as reverse sputtering, etching using plasma, and ion bombardment treatment using an ion gun is applied to a thin substrate. This is also common when performed.

  An object of the technology of the present disclosure is to provide a thin substrate processing apparatus capable of suppressing an increase in temperature of a thin substrate.

  One aspect of the thin substrate processing apparatus according to the technique of the present disclosure includes a substrate processing unit that processes a thin substrate, and a cooling unit that cools the thin substrate. The cooling unit cools the thin substrate by electrically adsorbing the thin substrate on which the processing is performed by the substrate processing unit.

  According to one aspect of the thin substrate processing apparatus in the technology of the present disclosure, even if the thin substrate is heated by the processing of the substrate processing unit, the cooling unit sucks and cools the thin substrate, so that cooling is not performed. Compared with the configuration, the temperature of the thin substrate is hardly increased.

  In another aspect of the thin substrate processing apparatus according to the technique of the present disclosure, the thin substrate is between the processing position where the thin substrate is processed by the substrate processing unit and the position where the thin substrate is not processed by the substrate processing unit. The apparatus further includes a transport unit that transports the substrate, and a displacement unit that changes a position of the cooling unit with respect to the thin substrate disposed at the processing position. The displacement part changes the position of the cooling part between a contact position where the cooling part contacts the thin substrate and a non-contact position where the cooling part does not contact the thin substrate. The transport unit transports the thin substrate with the cooling unit disposed at the non-contact position.

  According to another aspect of the thin substrate processing apparatus of the technology of the present disclosure, the transport unit transports the thin substrate in a state where the cooling unit is disposed at a non-contact position that does not contact the thin substrate. For this reason, it is possible to prevent the thin substrate from being conveyed while the thin substrate and the cooling unit are in contact with each other, and to suppress rubbing between the thin substrate and the cooling unit.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the thin substrate can be moved in a state in which the transport unit stands up the thin substrate and the thin substrate can move between the processing position and the non-processing position. And a substrate fixing portion for supporting the lower end portion in the standing direction and fixing the thin substrate disposed at the processing position at the upper end portion in the standing direction.

  According to another aspect of the thin substrate processing apparatus in the technique of the present disclosure, in the thin substrate disposed at the processing position, the lower end in the standing direction is supported by the transport unit, and the upper end in the standing direction The portion is fixed by the substrate fixing portion. For this reason, even if the cooling unit comes into contact with the thin substrate disposed at the processing position, the position of the thin substrate is less likely to change compared to a configuration in which the thin substrate is supported only by the transport unit.

  In another aspect of the thin substrate processing apparatus in the technology of the present disclosure, the substrate processing unit includes a film forming unit that forms a thin film on the thin substrate by sputtering, a reverse sputtering processing unit that applies a bias voltage to the thin substrate, One of an ion processing unit that performs ion bombardment processing on a thin substrate and an etching processing unit that applies a bias voltage to the thin substrate while generating plasma using an induction coil.

  According to another aspect of the thin substrate processing apparatus in the technology of the present disclosure, even if the thin substrate is heated by sputtering, reverse sputtering, ion bombardment, and etching, the thin substrate is cooled by the cooling unit. Is done. Therefore, it is possible to suppress the temperature of the thin substrate from being raised.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit includes the film forming unit and the reverse sputtering processing unit, and a vacuum chamber in which a target surface of the film forming unit is exposed. And a shutter covering the surface of the target. The reverse sputtering processing unit performs reverse sputtering on the surface of the thin substrate facing the target in a state where the shutter covers the surface of the target.

  According to another aspect of the thin substrate processing apparatus in the technology of the present disclosure, reverse sputtering of the thin substrate is performed in a state where the surface of the target is covered with the shutter. Therefore, even when the target of the film formation unit and the reverse sputtering processing unit are installed in the same vacuum chamber, the particles released from the thin substrate can be prevented from adhering to the surface of the target by cleaning the film substrate. . Therefore, it is possible to suppress the sputtered particles emitted from the target from containing particles emitted from the thin substrate.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit is the reverse sputtering processing unit, a voltage applying unit that applies a bias voltage to the thin substrate, and gas is supplied to the thin substrate A gas supply unit. The voltage application unit applies a bias voltage having a frequency of 1 MHz to 6 MHz to the thin substrate to which the gas is supplied.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, the substrate processing unit is the reverse sputtering processing unit, a voltage applying unit that applies a bias voltage to the thin substrate, and gas is supplied to the thin substrate A gas supply unit. The voltage application unit applies a bias voltage having a frequency of 13 MHz to 28 MHz and a bias voltage having a frequency of 100 kHz to 1 MHz to the thin substrate to which the gas is supplied.

  The inventors of the present application have found the following in earnest research on conditions for reverse sputtering of a thin substrate. That is, it has been found that when the frequency of the voltage applied to the thin substrate is 1 MHz or more and 6 MHz or less, the sputtering rate of the thin substrate can be increased as compared with the case where the frequency is greater than 6 MHz. Further, even when the frequency of the voltage applied to the thin substrate is 13 MHz or more and 28 MHz or less, a lower frequency voltage, that is, a voltage of 100 kHz or more and 1 MHz or less is superimposed, so that the sputtering rate of the thin substrate is increased. I found it to be enhanced.

  In this respect, in another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, when the thin substrate is reverse-sputtered, a voltage having a frequency of 1 MHz to 6 MHz is applied to the thin substrate. Sputtering speed is increased.

  In another aspect of the thin substrate processing apparatus according to the technology of the present disclosure, when the thin substrate is reverse-sputtered, a voltage having a frequency of 13 MHz to 28 MHz and a voltage having a frequency of 100 kHz to 1 MHz with respect to the thin substrate. Is superimposed, the sputtering rate of the thin substrate is increased.

It is a schematic structure figure showing the composition of the sputtering device in one embodiment of this indication in plane view, and is a figure shown with the film substrate stored in a sputtering device. It is a figure which shows typically the cross-section of an electrostatic chuck. It is a figure which shows the structure of a conveyance lane with the film substrate which is the object of conveyance. It is a top view which shows the planar structure which looked at the board | substrate fixing | fixed part from the downward direction of the standing direction. It is a block diagram which shows the electric constitution of a sputtering device. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a figure which shows the drive state of a sputtering device when a film-forming process is performed. It is a graph which shows the relationship between the voltage applied to a chuck electrode, and a substrate temperature. 6 is a graph showing the distribution of reverse sputtering speed in Example 2. 6 is a graph showing a reverse sputtering rate distribution in Example 3. It is a graph which shows distribution of the reverse sputtering speed in a comparative example. It is a schematic block diagram which shows a part of sputtering apparatus in a modification in planar view, and is a figure shown with the film substrate accommodated in a sputtering apparatus. It is a schematic block diagram which shows a part of sputtering apparatus in a modification in planar view, and is a figure shown with the film substrate accommodated in a sputtering apparatus.

  The configuration of an embodiment of a thin substrate processing apparatus will be described with reference to FIGS. In the following, the overall configuration of a sputtering apparatus, which is an example of a thin substrate processing apparatus, the configuration of an electrostatic chuck, the configuration of a transfer lane, the configuration of a substrate fixing part, the electrical configuration of the sputtering apparatus, the film forming process in the sputtering apparatus, and the implementation This will be described in the order of examples.

[Overall configuration of sputtering equipment]
The overall configuration of the sputtering apparatus will be described with reference to FIG.
As shown in FIG. 1, the sputtering apparatus 10 includes a carry-in / out chamber 11 having a box shape extending toward the front of the paper surface, and a vacuum chamber 12 having a box shape extending toward the front of the paper surface. A gate valve 13 is provided between the processing chamber 11 and the vacuum chamber 12 for communicating or blocking between the processing chambers. The carry-in / out chamber 11 extends along the carry-in / out direction, which is the left-right direction of the paper surface, the vacuum chamber 12 extends along the transport direction, which is the up-down direction of the paper surface, Connected to the center.

  In the carry-in / out chamber 11, an exhaust part 11 </ b> V for exhausting the inside of the carry-in / out chamber 11 is mounted, and a carry-in / out lane 11 </ b> L extending along the carry-in / out direction is installed on the bottom surface of the carry-in / out chamber 11. The carry-in / out chamber 11 carries in a film substrate S as a thin substrate before film formation attached to the frame-shaped tray T from the outside, and carries it out to the vacuum chamber 12 through a carry-in / out lane 11L. The carry-in / out chamber 11 carries the film substrate S after film formation from the vacuum chamber 12 through the carry-in / out lane 11L and carries it out to the outside.

  The film substrate S is a resin substrate having a rectangular plate shape that extends toward the front of the page, for example. The width of the film substrate S is, for example, 500 mm along the left-right direction of the paper surface, 600 mm toward the front side of the paper surface, and the thickness of the film substrate S is, for example, 80 μm.

  As the forming material of the film substrate S, acrylic resin, polyamide resin, melamine resin, polyimide resin, polyester resin, cellulose, and copolymer resins thereof are used. In addition, as a material for forming the film substrate S, organic natural compounds such as gelatin and casein are used.

  More specifically, the material for forming the film substrate S includes polyester, polyethylene terephthalate, polybutylene terephthalate, polymethylene methacrylate, acrylic, polycarbonate, polystyrene, triacetate, polyvinyl alcohol, polyvinyl chloride, polyvinylidene chloride, polyethylene, and ethylene-acetic acid. Vinyl copolymers, polyvinyl butyral, metal ion cross-linked ethylene-methacrylic acid copolymers, polyurethane, cellophane and the like are used. Among these, as a forming material of the film substrate S, it is preferable to use any of polyethylene terephthalate, polycarbonate, polymethylene methacrylate, and triacetate.

  The thin substrate is not limited to a film substrate, but may be a substrate constituting a printed substrate, such as a paper phenol substrate, a glass epoxy substrate, a Teflon substrate (Teflon is a registered trademark), a ceramic substrate such as alumina, a low temperature co-fired ceramic (LTCC). It may be a rigid substrate such as a substrate. Or the printed board by which the wiring layer comprised with the metal was formed in these board | substrates may be sufficient. In order to enhance the effect of the technology of the present disclosure, it is preferable to use a substrate having a thickness of 1 mm or less as the thin substrate, and it is more preferable to use a substrate having a thickness of 100 μm or less.

  The vacuum chamber 12 includes a reversing chamber 12A, a first film forming chamber 12B, and a second film forming chamber 12C, and the first film forming chamber 12B and the second film forming chamber 12C sandwich the reversing chamber 12A in the transport direction. Is arranged in. An exhaust portion 12V for exhausting the inside of the vacuum chamber 12 is mounted on a surface of the reversing chamber 12A facing the carry-in / out chamber 11. Among the bottom walls of the vacuum chamber 12, a transport lane 12 </ b> L serving as a transport unit extending in the transport direction is installed on the bottom wall of the first film formation chamber 12 </ b> B and the bottom wall of the second film formation chamber 12 </ b> C. Between the transfer lanes 12L, a substrate rotating unit 12R is installed in the reversing chamber 12A.

  The substrate rotating unit 12R includes, for example, a mounting unit on which the film substrate S is mounted and a rotation motor that rotates the mounting unit around an axis orthogonal to the bottom wall of the reversing chamber 12A. The substrate rotating unit 12R arranges the film substrate S on the transport lane 12L by rotating the film substrate S carried in from the carry-in / out chamber 11 by 90 °, for example, counterclockwise on the paper surface. Further, the substrate rotating unit 12R changes the surface of the film substrate S facing the gate valve 13 by rotating the film substrate S 180 degrees counterclockwise in the drawing.

  In the first film forming chamber 12B, the first film forming unit 20A is mounted on the side wall facing the carry-in / out chamber 11, and in the second film forming chamber 12C, the second film forming unit 20B is also formed on the side wall facing the carry-in / out chamber 11. It is installed. Each of the first film forming unit 20A and the second film forming unit 20B is an example of a substrate processing unit. The first film forming unit 20A and the second film forming unit 20B are arranged with the substrate rotating unit 12R interposed therebetween in the transport direction. The first film forming unit 20A and the second film forming unit 20B are different in the mounting position in the vacuum chamber 12 and the thin film to be formed, but the other configurations are the same. The configuration of 20A will be described, and the description of the configuration of the second film forming unit 20B will be omitted.

  The first film forming unit 20A includes a target 21 facing the film substrate S and a backing plate 22 attached to a surface of the target 21 that does not face the film substrate S. The backing plate 22 supplies power to the target 21. The target power supply 23 to be connected is connected. The main component of the material for forming the target 21 is, for example, titanium. On the opposite side of the backing plate 22 from the target 21, a magnetic circuit 24 that forms a leakage magnetic field is mounted on the surface of the target 21 that faces the film substrate S. The first film forming unit 20A includes a sputtering gas supply unit 25 that is connected to the side wall of the first film forming chamber 12B and supplies a sputtering gas into the first film forming chamber 12B. For example, the sputtering gas supply unit 25 supplies argon gas as the sputtering gas. Note that the sputtering gas may be any of nitrogen gas, oxygen gas, and hydrogen gas, or may be a mixed gas in which at least two of these four kinds of gases including argon gas are mixed.

  In the first film forming unit 20A, the target power source 23 supplies, for example, high-frequency power to the target 21 through the backing plate 22 when the sputtering gas supply unit 25 supplies argon gas into the first film forming chamber 12B. As a result, plasma is generated from the argon gas in the first film formation chamber 12B, and the surface of the target 21 that faces the film substrate S is sputtered by positive ions in the plasma, and titanium is the main component toward the film substrate S. Sputtered particles Sp are emitted.

  In the second film forming unit 20B, the main component of the material for forming the target 21 is, for example, copper. The main component of the material for forming the target 21 described above is not limited to titanium or copper, but may be chromium. Alternatively, the main component of the material for forming the target 21 may be an alloy containing at least two of titanium, copper, and chromium.

  A grounded plate-like shutter 26 is mounted between the target 21 and the transfer lane 12L in the carry-in / out direction in the first film forming chamber 12B. The shutter 26 includes, for example, a shutter main body in which an opening 26a is formed, a plate-shaped covering portion that is displaced between a position that covers the opening 26a and a position that is opened, a shutter motor that changes the position of the covering portion, and a shutter motor. A rotating shaft or the like for transmitting the rotational motion to the shutter. The shutter 26 covers the entire surface of the target 21 when the covering portion is disposed at a position covering the opening 26 a.

  The substrate rotating unit 12R arranges the film substrate S on the transport lane 12L by rotating the film substrate S carried into the reversing chamber 12A. The transport lane 12L transports the film substrate S toward the first film forming unit 20A or the second film forming unit 20B. Thereby, the transport lane 12L moves the film substrate S from the non-processing position where the film substrate S and the target 21 do not face each other in the transport direction to the processing position where the entire film substrate S and the target 21 face each other. Transport. The first film forming unit 20A and the second film forming unit 20B form a thin film on the film substrate S disposed at the processing position corresponding to each of the film forming units 20A and 20B.

  Each of the first film forming chamber 12B and the second film forming chamber B is equipped with one electrostatic chuck 31 as a cooling unit, and the electrostatic chuck 31 in the first film forming chamber 12B is the first film forming chamber 12B. The electrostatic chuck 31 in the second film forming chamber 12C is arranged at a processing position corresponding to the second film forming unit 20B. Each electrostatic chuck 31 cools the film substrate S by contacting and electrically adsorbing the surface of the film substrate S that does not face the target 21. Each electrostatic chuck 31 is connected to a displacement portion 32 that changes the position of the electrostatic chuck 31 in the loading / unloading direction.

  Each displacement portion 32 includes, for example, a shaft connected to a surface of the electrostatic chuck 31 that does not face the target 21, a displacement motor that changes the position of the shaft in the loading / unloading direction, and a rotational motion of the displacement motor that is a linear motion. It is equipped with a transmission part that changes to the shaft and transmits it to the shaft. Each displacement portion 32 is between a contact position where the electrostatic chuck 31 in contact with the film substrate S in the carry-in / out direction and a non-contact position where the electrostatic chuck 31 in the carry-in / out direction does not contact the film substrate S. The position of the electrostatic chuck 31 is changed.

  Each of the electrostatic chucks 31 is disposed at a contact position in the loading / unloading direction when the film substrate S is disposed at the processing position, and is disposed at a non-contact position in the loading / unloading direction when the film substrate S is transported. . That is, when the film substrate S is transported, the electrostatic chuck 31 is disposed at a position away from the film substrate S, so that the film substrate S being transported and the electrostatic chuck 31 come into contact with each other. The electrostatic chuck 31 can be prevented from rubbing.

[Configuration of electrostatic chuck]
The configuration of the electrostatic chuck 31 will be described in more detail with reference to FIG.
As shown in FIG. 2, the electrostatic chuck 31 includes an insulating plate 41 that has a plate shape extending toward the front of the paper surface. The insulating plate 41 is formed of a material such as ceramics such as aluminum oxide, polyimide, or the like. Etc. are used. The width of the insulating plate 41 is smaller than the width of the film substrate S in both the left-right direction on the paper surface and the front side of the paper surface.

  In the insulating plate 41, a plurality of chuck electrodes 42 having a plate shape extending toward the front of the paper surface are disposed in the vicinity of the surface facing the film substrate S. The plurality of chuck electrodes 42 includes a plurality of positive electrodes 42a to which a relatively positive voltage is applied, and the same number of negative electrodes 42b as the positive electrodes 42a to which a relatively negative voltage is applied. In 41, the positive electrode 42a and the negative electrode 42b are alternately located in a line along the conveyance direction. A chuck power supply 43 is connected to each chuck electrode 42. The chuck power source 43 includes a positive power source 43a that supplies a relatively positive voltage and a negative power source 43b that supplies a relatively negative voltage, and a plurality of positive electrodes 42a are connected to the positive power source 43a. The negative power source 43b is connected to a plurality of negative electrodes 42b.

  On the surface of the insulating plate 41 that does not face the film substrate S, a plate-like bias electrode 61 that extends toward the front of the paper is disposed with a copper plate 63 that extends toward the front of the paper. ing. In the bias electrode 61, a cooling hole 61h, which is a passage for a refrigerant for cooling the bias electrode 61, the copper plate 63, and the insulating plate 41, is formed. A circulation unit 51 is connected. As the coolant that cools the bias electrode 61 and the insulating plate 41, a coolant such as cooling water, a fluorine-based solution, and an ethylene glycol solution, or a cooling gas such as helium gas or argon gas is used.

  The bias electrode 61 is connected to a bias high-frequency power source 62 that supplies high-frequency power to the bias electrode 61. The high frequency power supply 62 for bias preferably supplies high frequency power having a frequency of 1 MHz to 6 MHz, for example. Alternatively, the bias high frequency power supply 62 may supply a high frequency power having a relatively high frequency and a high frequency power having a relatively low frequency. In this case, the bias high-frequency power source 62 preferably supplies high-frequency power having a frequency of 13 MHz to 28 MHz and high-frequency power having a frequency of 100 kHz to 1 MHz. In the present embodiment, the bias electrode 61, the bias high-frequency power source 62, and the sputtering gas supply unit 25 constitute a reverse sputtering processing unit. The high frequency power supply 62 for bias constitutes a voltage application unit.

  Thus, since the insulating plate 41 whose temperature is controlled by the refrigerant cools the film substrate S, even if particles having high energy reach the film substrate S due to film formation on the film substrate S or the like, the film Compared with a configuration in which the substrate S is not cooled, the temperature of the film substrate S is hardly increased.

  As described above, the width of the insulating plate 41 is smaller than the width of each direction of the film substrate S in both the left and right directions of the paper surface and the forward direction of the paper surface. Therefore, the outer periphery of the film substrate S is less likely to be cooled than the central portion of the film substrate S. In this regard, when the above-described titanium or copper thin film is formed on the film substrate S, the heat of the film substrate S is transmitted to the metal film having a higher thermal conductivity than the film substrate S, The heat is dissipated through. Therefore, compared with the case where an insulating film is formed with respect to the film substrate S etc., it becomes difficult to raise the temperature of the film substrate S.

  Further, when the high frequency power supply 62 for bias supplies high frequency power to the bias electrode 61 in a state where the argon gas is supplied from the sputtering gas supply unit 25 to the first film forming chamber 12B, the first film forming chamber 12B includes Plasma is generated from argon gas. When high frequency power is supplied to the bias electrode 61 while the electrostatic chuck 31 is attracting the film substrate S, a bias voltage is applied to the film substrate S. Thereby, since positive ions in the plasma are attracted to the film substrate S, the surface of the film substrate S that does not face the electrostatic chuck 31 is reverse-sputtered.

[Construction of transportation lane]
The configuration of the transport lane 12L will be described in more detail with reference to FIGS. FIG. 3 shows a state in which the film substrate S is disposed at a facing position facing the first film forming unit 20A in the transport direction. The transfer lane 12L installed in the first film formation chamber 12B and the transfer lane 12L installed in the second film formation chamber 12C are related to the transfer of the film substrate S although the installation positions in the vacuum chamber 12 are different. The configuration is the same. Therefore, hereinafter, the configuration of the transfer lane 12L installed in the first film formation chamber 12B will be described, and the description of the configuration of the transfer lane 12L installed in the second film formation chamber 12C will be omitted.

  As shown in FIG. 3, a transfer lane 12L is installed on the bottom wall of the first film forming chamber 12B, and the transfer lane 12L has a predetermined interval between the transfer rail 71 extending along the transfer direction and the transfer rail 71. And a plurality of conveying rollers 72 arranged with a gap therebetween. Each of the transport rollers 72 is supported by the transport rail 71 in a state where it can rotate about the axis of the transport roller 72 as a rotation center. Each conveyance roller 72 is connected to a conveyance motor 73 that rotates the conveyance roller 72, and each conveyance motor 73 rotates the conveyance roller 72 in two directions by rotating in the forward direction and the reverse direction.

  The film substrate S supported by the tray T is placed on the transport rail 71 in an upright state. Hereinafter, the height direction of the film substrate S is set as the standing direction. The tray T on the transport rail 71 rotates the substrate from the substrate rotating unit 12R in the transport direction toward the facing position corresponding to each of the film forming units 20A and 20B or from the facing position by rotating the transport roller 72. It is conveyed together with the film substrate S toward the portion 12R. In this way, the transport lane 12L transports the film substrate S while supporting the lower end of the film substrate S in the standing direction.

  On the upper wall of the first film forming chamber 12B, a substrate fixing portion 74 for fixing the film substrate S at the above-described processing position is attached at a position facing a part of the transport lane 12L. The substrate fixing part 74 fixes the position of the film substrate S to the processing position by supporting the upper end in the rising direction of the film substrate S, that is, the upper edge in the rising direction of the tray T.

  As shown in FIG. 4, the substrate fixing portion 74 has a cylindrical shape extending along the transport direction, and a holding groove 74 h is formed at the lower end portion in the standing direction. The groove width, which is the width along the carry-in / out direction in the holding groove 74h, is the largest at the end near the substrate rotating part 12R, and the smallest at the end far from the substrate rotating part 12R. The width of the holding groove 74h gradually decreases from the groove width W1 toward the groove width W2. The groove width of the sandwiching groove 74h becomes a groove width W3 equal to the width along the carry-in / out direction of the tray T in the middle of the conveyance direction. Therefore, in the tray T being transported in the transport lane 12L, the upper edge in the standing direction is inserted into the substrate fixing portion 74. Then, the position of the tray T in the transport direction is fixed to the processing position in the middle of the transport direction of the substrate fixing unit 74.

[Electrical configuration of sputtering equipment]
The electrical configuration of the sputtering apparatus 10 will be described with reference to FIG. Hereinafter, of the electrical configuration of the sputtering apparatus 10, only the configuration related to the drive control of the vacuum chamber 12 will be described.

  As shown in FIG. 5, the sputtering apparatus 10 includes a control device 80 as a control unit that controls driving of the sputtering apparatus 10. The control unit 80 is connected to the exhaust unit 12V, the substrate rotating unit 12R, the sputtering gas supply unit 25, the shutter 26, the displacement unit 32, the transport motor 73, the target power source 23, the chuck power source 43, and the bias high frequency power source 62. ing.

  The control device 80 outputs a drive start signal for starting the drive of the exhaust unit 12V and a drive stop signal for stopping the drive of the exhaust unit 12V to the exhaust unit drive circuit 12VD. The exhaust unit drive circuit 12VD generates a drive signal for driving the exhaust unit 12V in accordance with a control signal from the control device 80, and outputs the generated drive signal to the exhaust unit 12V.

  The control device 80 outputs to the substrate rotation unit drive circuit 12RD a drive start signal for starting driving of the substrate rotation unit 12R, in particular, a rotation motor, and a drive stop signal for stopping driving of the substrate rotation unit 12R. To do. The substrate rotation unit drive circuit 12RD generates a drive signal for driving the substrate rotation unit 12R according to a control signal from the control device 80, and outputs the generated drive signal to the substrate rotation unit 12R.

  The control device 80 supplies a supply start signal for starting the supply of the sputtering gas from the sputtering gas supply unit 25 and a supply stop signal for stopping the supply of the sputtering gas from the sputtering gas supply unit 25 to supply the sputtering gas. To the unit drive circuit 25D. The sputtering gas supply unit drive circuit 25 </ b> D generates a drive signal for driving the sputtering gas supply unit 25 in accordance with a control signal from the control device 80, and outputs the generated drive signal to the sputtering gas supply unit 25.

  The control device 80 outputs a drive start signal for starting the drive of the shutter 26, in particular, the shutter motor, and a drive stop signal for stopping the drive of the shutter 26 to the shutter drive circuit 26D. The shutter drive circuit 26 </ b> D generates a drive signal for driving the shutter 26 in accordance with a control signal from the control device 80, and outputs the generated drive signal to the shutter 26.

  The control device 80 outputs a drive start signal for starting driving of the displacement unit 32, in particular, a displacement motor, and a drive stop signal for stopping driving of the displacement unit 32 to the displacement unit drive circuit 32D. The displacement unit drive circuit 32 </ b> D generates a drive signal for driving the displacement unit 32 according to the control signal from the control device 80, and outputs the generated drive signal to the displacement unit 32.

  The control device 80 outputs a drive start signal for starting the drive of the carry motor 73 and a drive stop signal for stopping the drive of the carry motor 73 to the carry motor drive circuit 73D. The transport motor drive circuit 73 </ b> D generates a drive signal for driving the transport motor 73 in accordance with a control signal from the control device 80, and outputs the generated drive signal to the transport motor 73.

  The control device 80 outputs a supply start signal for starting supply of power from the target power supply 23 and a supply stop signal for stopping supply of power from the target power supply 23 to the target power supply 23. The target power supply 23 supplies and stops power according to a control signal from the control device 80.

  The control device 80 outputs a supply start signal for starting supply of power from the chuck power supply 43 and a supply stop signal for stopping supply of power from the chuck power supply 43 to the chuck power supply 43. The chuck power supply 43 supplies and stops electric power according to a control signal from the control device 80.

  The control device 80 outputs a supply start signal for starting supply of power from the bias high frequency power supply 62 and a supply stop signal for stopping supply of power from the bias high frequency power supply 62 to the bias high frequency power supply 62. Output to. The bias high-frequency power source 62 supplies and stops power according to a control signal from the control device 80.

[Film formation with sputtering equipment]
With reference to FIG. 6 to FIG. 9, the driving state of the sputtering apparatus 10 when the film forming process is performed in the vacuum chamber 12 of the sputtering apparatus 10 will be described. 6 to 9, for convenience of illustration, only the vacuum chamber 12 provided in the sputtering apparatus 10 is shown, and the carry-in / out chamber 11 is not shown.

  In the vacuum chamber 12 of the sputtering apparatus 10 described above, reverse sputtering processing, adhesion layer forming processing, and seed layer forming processing for cleaning the surface that is the film formation surface of the film substrate S with respect to the film substrate S before film formation are performed. It is done in order. Note that an insulating layer made of, for example, a glass epoxy resin is formed on the surface of the film substrate S. Hereinafter, the operation of the sputtering apparatus 10 from when the film substrate S is carried into the vacuum chamber 12 until the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process are completed will be described.

  As shown in FIG. 6, when the film forming process is performed on the film substrate S, first, the control device 80 outputs a drive start signal for the rotation motor, and the substrate rotating unit 12R is placed on the mounting unit. S is rotated 90 ° counterclockwise. Thereby, the lower end of the tray T in the standing direction is arranged on the transfer lane 12L of the first film forming chamber 12B. Before the film substrate S is carried into the vacuum chamber 12, the control device 80 outputs a drive start signal for the exhaust unit 12V, and the exhaust unit 12V exhausts the inside of the vacuum chamber 12. Thereby, the inside of the vacuum chamber 12 is depressurized to a predetermined pressure. Further, the covering portion of the shutter 26 is disposed at a position covering the opening 26a.

  After the film substrate S is carried in, the control device 80 outputs supply start signals for the two sputtering gas supply units 25 mounted in the vacuum chamber 12. Each sputtering gas supply unit 25 starts supplying argon gas into the vacuum chamber 12 at a predetermined flow rate, and maintains the inside of the vacuum chamber 12 at a predetermined pressure. Note that the flow rates of the argon gas supplied by the two sputtering gas supply units 25 may be the same or different from each other.

  And the control apparatus 80 outputs the drive start signal with respect to the conveyance motor 73, and 12 L of conveyance lanes move the film board | substrate S toward the process position which is a position facing the target 21 of the 1st film-forming part 20A from a non-process area | region. Transport. The control device 80 outputs a drive stop signal for the transport motor 73, and the transport lane 12L fixes the position of the film substrate S at the facing position. At this time, the upper edge of the tray T in the rising direction enters the holding groove 74 h of the substrate fixing portion 74 and is fixed by the substrate fixing portion 74.

  As shown in FIG. 7, the control device 80 outputs a drive start signal for the displacement motor, and the displacement unit 32 disposed at the position facing the first film forming unit 20 </ b> A determines the position of the electrostatic chuck 31 in the loading / unloading direction. By changing, the electrostatic chuck 31 is moved from the non-contact position to the contact position. At this time, since the tray T is fixed by the substrate fixing portion 74, the position of the film substrate S can be prevented from changing even if the electrostatic chuck 31 comes into contact.

  Thereafter, the control device 80 outputs a supply start signal to the chuck power source 43, and a potential difference is formed on the surface of the insulating plate 41 facing the film substrate S, so that the electrostatic chuck 31 attracts the film substrate S.

  Next, the control device 80 outputs a supply start signal to the bias high-frequency power source 62 of the first film forming unit 20A. Then, the bias high frequency power supply 62 starts to supply high frequency power to the bias electrode 61.

  Thereby, plasma is generated from the argon gas in the first film formation chamber 12B, and positive ions in the plasma are drawn toward the film substrate S. As a result, the surface of the film substrate S facing the target 21 is reverse-sputtered, so that deposits and the like on the film substrate S are removed. At this time, since the film substrate S is cooled by the electrostatic chuck 31, it is possible to suppress an increase in the temperature of the film substrate S compared to a configuration in which the film substrate S is not cooled. Further, since the surface of the target 21 that faces the film substrate S is covered with the shutter 26, particles emitted from the film substrate S are less likely to adhere to the surface of the target 21.

  Therefore, even if the surface cleaning of the film substrate S by reverse sputtering and the film forming process on the film substrate S are performed in the same first film forming chamber 12B, the thin film formed on the film substrate S is not The particles released from the film substrate S are less likely to be contained. In addition, since the cleaning process of the surface of the target 21 facing the film substrate S can be omitted before the film substrate S is formed, the number of film forming processes performed in the vacuum chamber 12 can be reduced. it can.

  When reverse sputtering of the film substrate S is performed for a predetermined time, the control device 80 outputs a supply stop signal to the bias high-frequency power source 62, and the bias high-frequency power source 62 stops supplying high-frequency power to the bias electrode 61. . Thereby, the reverse sputtering of the film substrate S is completed.

  As shown in FIG. 8, the control device 80 outputs a drive start signal for the shutter motor, and the covering portion of the shutter 26 is disposed at a position where the opening 26a is opened. Then, the control device 80 outputs a supply start signal to the target power source 23, whereby the target power source 23 supplies power to the target 21 through the backing plate 22. Thereby, plasma is generated from the argon gas in the first film formation chamber 12B, and the surface of the target 21 that faces the film substrate S is sputtered by positive ions in the plasma. As a result, sputtered particles Sp mainly composed of titanium are released from the target 21 toward the film substrate S, whereby a thin film of titanium as an adhesion layer is formed on the film substrate S.

  Since argon gas is continuously supplied into the first film formation chamber 12B over the reverse sputtering of the film substrate S and the formation of the adhesion layer, the pressure in the first film formation chamber 12B hardly changes. Therefore, compared to a configuration in which the supply of argon gas is stopped at the same time as the reverse sputtering of the film substrate S is completed, plasma is easily generated from the argon gas in the first film formation chamber 12B. Further, the film substrate S continues to be attracted by the electrostatic chuck 31 over the reverse sputtering of the film substrate S and the formation of the adhesion layer. Therefore, as compared with the configuration in which the adsorption of the film substrate S by the electrostatic chuck 31 is stopped at the same time as the reverse sputtering of the film substrate S is terminated, the film substrate S is cooled for a longer period. It becomes difficult to raise the temperature of the.

  When the adhesion layer is formed over a predetermined time, the control device 80 outputs a supply stop signal to the target power source 23. Thereby, the formation of the adhesion layer on the film substrate S is completed. Next, the control device 80 outputs a supply stop signal to the chuck power supply 43, and the adsorption of the film substrate S by the electrostatic chuck 31 is released. Further, the control device 80 outputs a drive start signal for the shutter motor, and the covering portion of the shutter 26 is disposed at a position covering the opening 26a.

  As shown in FIG. 9, the control device 80 outputs a drive signal for the displacement motor, and the displacement unit 32 disposed at the processing position that is the position opposite to the first film forming unit 20 </ b> A moves in and out of the electrostatic chuck 31. By changing the position at, the electrostatic chuck 31 is moved from the contact position to the non-contact position. And the control apparatus 80 outputs the drive start signal with respect to the conveyance motor 73, and the conveyance lane 12L conveys the film board | substrate S toward the board | substrate rotation part 12R. As a result, the upper edge of the tray T moves out of the holding groove 74 h of the substrate fixing portion 74.

  And the control apparatus 80 outputs the drive start signal with respect to a rotary motor, and the film rotation part 12R conveys the film board | substrate S to the conveyance lane 12L by the side of the 2nd film-forming part 20B in the state which does not rotate the film board | substrate S. Next, the control device 80 outputs a drive start signal to the transport motor 73, and transports the film substrate S from the non-processing position toward the processing position that is the position facing the second film forming unit 20B. The control device 80 outputs a drive stop signal for the transport motor 73, and the transport lane 12L fixes the position of the film substrate S at the facing position. At this time, the upper edge of the tray T in the rising direction enters the holding groove 74 h of the substrate fixing portion 74 and is fixed by the substrate fixing portion 74.

  The control device 80 outputs a drive start signal for the displacement motor, and the displacement unit 32 disposed at the position facing the second film forming unit 20B changes the position of the electrostatic chuck 31 in the loading / unloading direction, thereby causing the electrostatic chuck 31 to move. Is moved from the non-contact position to the contact position. At this time, since the tray T is fixed by the substrate fixing portion 74, the position of the film substrate S can be prevented from changing even if the electrostatic chuck 31 comes into contact.

  Thereafter, the control device 80 outputs a supply start signal to the chuck power source 43, and a potential difference is formed on the surface of the insulating plate 41 facing the film substrate S, so that the electrostatic chuck 31 attracts the film substrate S.

  Next, the control device 80 outputs a supply start signal for the target power supply 23 of the second film forming unit 20B. Then, the target power source 23 starts supplying power to the target 21 through the backing plate 22. Thereby, plasma is generated from the argon gas in the second film forming chamber 12C, and the surface of the target 21 facing the film substrate S is sputtered by positive ions in the plasma. As a result, sputtered particles Sp mainly composed of copper are emitted from the target 21 toward the film substrate S, and a copper thin film as a seed layer is formed on the film substrate S. At this time, since the film substrate S is cooled by the electrostatic chuck 31, it is possible to suppress an increase in the temperature of the film substrate S compared to a configuration in which the film substrate S is not cooled.

  When the seed layer is formed over a predetermined time, the control device 80 outputs a supply stop signal to the target power source 23. As a result, the target power source 23 stops supplying power to the backing plate 22 and the formation of the seed layer is completed. Next, the control device 80 outputs a supply stop signal to the chuck power supply 43, and the adsorption of the film substrate S by the electrostatic chuck 31 is released.

Next, the control device 80 outputs a supply stop signal to each of the two sputtering gas supply units 25, and the sputtering gas supply unit 25 stops supplying argon gas into the vacuum chamber 12.
As described above, the argon gas is continuously supplied into the vacuum chamber 12 from the start to the end of the reverse sputtering process for the film substrate S, the formation of the adhesion layer, and the formation of the seed layer. For this reason, the pressure in the vacuum chamber 12 is less likely to change compared to a configuration in which the supply state of the argon gas changes each time the reverse sputtering process, the formation of the adhesion layer, and the formation of the seed layer are started and ended. Therefore, plasma is easily generated in the vacuum chamber 12 when the adhesion layer and the seed layer are formed.

  In addition, according to such a vacuum chamber 12, it is possible to perform a reverse sputtering process, an adhesion layer forming process, and a seed layer forming process on two surfaces facing each other on the film substrate S. When each process is performed on two surfaces of the film substrate S, the film substrate S is subjected to all of the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process on one surface of the film substrate S. It is only necessary that S is rotated 180 ° counterclockwise by the substrate rotating unit 12R. Thereby, the reverse sputtering process, the adhesion layer forming process, and the seed layer forming process for the other surface of the film substrate S can be performed. Alternatively, after the reverse sputtering process and the adhesion layer forming process are performed on each of the two surfaces of the film substrate S, the seed layer forming process may be performed on each of the two surfaces.

[Example]
[Example 1]
When a copper film is formed on a printed circuit board and a polyester resin film substrate, the voltage supplied to the chuck electrode of the electrostatic chuck is changed when the copper film is formed, and the copper film is formed at each voltage The temperature of the printed circuit board and the film substrate was measured. FIG. 10 shows the measurement results for each substrate. In FIG. 10, the vertical axis represents the substrate temperature, and the horizontal axis represents the absolute value of the voltage applied to the chuck electrode.

  The printed circuit board consists of a glass cloth called a core material that has been hardened into a film with an epoxy resin and then a copper epoxy film layer on which the copper film and glass epoxy resin layer are laminated. Using. Moreover, the thickness of the printed circuit board was 80 μm, and the thickness of the film substrate made of polyester resin was 300 μm. The copper film was formed under the following conditions. The following film formation time is the time from the start of film formation until the temperature of the printed circuit board or the temperature of the film substrate is measured.

・ Target copper ・ Target power output 40kW
・ Deposition time 1 minute ・ Refrigerant Cooling water ・ Refrigerant temperature 25 ℃
As shown in FIG. 10, it was confirmed that the temperature of the printed circuit board and the film substrate was 250 ° C. when no voltage was applied to the electrostatic chuck, whether it was a printed circuit board or a film substrate. On the other hand, in the printed circuit board, when a voltage of 0.5 kV is applied to the chuck electrode, the temperature of the printed circuit board becomes approximately 50 ° C., and the voltage applied to the chuck electrode is more than 0.5 kV. It was observed that even when increased, the temperature of the film substrate was approximately 50 ° C.

  In the case of a film substrate, when a voltage of 0.5 kV is applied to the chuck electrode, the temperature of the film substrate becomes approximately 70 ° C., and the voltage applied to the chuck electrode is made higher than 0.5 kV. However, it was observed that the temperature of the film substrate was approximately 70 ° C.

  As described above, it is recognized that the temperature of the printed circuit board and the film substrate is maintained at 150 ° C. or lower, which is the temperature at which the printed circuit board and the film substrate are deformed, by cooling the printed circuit board and the film substrate by the electrostatic chuck. It was.

[Example 2]
The surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate was measured at different positions within the effective sputtering range, which is the range in which the insulating substrate was sputtered. In addition, the magnitude | size of the sputtering effective range is 500 mm x 600 mm, and the sputtering process was performed on condition of the following. Then, the sputtering rate was measured between the first corner and the second corner, which are the two corners on the diagonal within the effective sputtering range, the center, and between each corner and the center, and the result is shown in FIG. Is shown in

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency 2MHz
・ Power consumption 730W
・ Pressure 2Pa
As shown in FIG. 11, the sputtering rate at the center of the effective sputtering range is 1.9 nm / min, and the variation in the sputtering rate over the entire effective sputtering range is ± 7.3%. It was. It is also recognized that a result equivalent to the result shown in FIG. 11 can be obtained if the frequency of the high frequency power supplied from the high frequency power supply for bias is in the range of 1 MHz to 6 MHz.

[Example 3]
As in Example 2, the surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate at different positions in the sputtering effective range was measured. In Example 3, the sputtering treatment was performed under the following conditions, and the sputtering rate was measured at the same position as in Example 2 in the sputtering effective range. The result is shown in FIG.

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency (high frequency) 13.56MHz
・ Electricity (high frequency) 730W
・ Frequency (low frequency) 200 kHz
・ Electricity (low frequency) 805W
・ Pressure 2Pa
As shown in FIG. 12, the sputtering rate at the center of the sputtering effective range is 21.1 nm / min, and it is recognized that the variation in the sputtering rate in the entire sputtering effective range is ± 23.7%. It was. Of the high frequency power for bias, the frequency of the high frequency power having a relatively high frequency is 13 MHz to 28 MHz and the frequency of the high frequency power having a relatively low frequency is 100 kHz to 1 MHz, as shown in FIG. It is also recognized that results equivalent to those obtained are obtained.

[Comparative example]
As in Example 2, the surface of the insulating substrate made of glass epoxy resin was sputtered, and the sputtering rate of the insulating substrate at different positions on the film substrate was measured. In the comparative example, the sputtering process was performed under the following conditions, and the sputtering speed was measured at the same position as in Example 2 on the film substrate. The result is shown in FIG.

・ Substrate Glass epoxy resin substrate ・ Sputtering gas Argon gas ・ Flow rate 200sccm
・ Frequency 13.56MHz
・ Power consumption 730W
・ Pressure 0.7Pa
As shown in FIG. 13, the sputtering rate at the center of the sputtering effective range is 0.4 nm / min, and it is recognized that the variation in the sputtering rate over the entire sputtering effective range is ± 42.0%. It was.

  Thus, when sputtering the film substrate, the sputtering rate is increased by setting the frequency of the high frequency power supplied from the biasing high frequency power source to 1 MHz or more and 6 MHz or less, and the sputtering rate in the plane of the film substrate is increased. It was recognized that the variation in the size was also reduced. Further, the frequency of the high frequency power supplied from the high frequency power supply for bias is a relatively high frequency and a relatively low frequency as described below, so that the sputtering rate can be increased and the surface of the film substrate can be increased. It was confirmed that the variation in the sputtering rate was also reduced.

-High frequency 13 MHz or more and 28 MHz or less-Low frequency 100 kHz or more and 1 MHz or less As described above, according to one embodiment of the thin substrate processing apparatus, the effects listed below can be obtained.

  (1) Even when sputtered particles having high energy are emitted to the film substrate S, the electrostatic chuck 31 attracts and cools the film substrate S, so that the film substrate is compared with a configuration in which cooling is not performed. It becomes difficult to raise the temperature of S.

  (2) Since the transport lane 12L transports the film substrate S in a state where the electrostatic chuck 31 is disposed at a non-contact position where the electrostatic chuck 31 does not contact the film substrate S, the film substrate S is transported when the film substrate S is transported. And the electrostatic chuck 31 can be prevented from rubbing.

  (3) In the film substrate S arranged at the processing position, the lower end portion in the standing direction is supported by the transport lane 12L, and the upper edge in the standing direction is fixed by the substrate fixing portion 74. Therefore, even if the electrostatic chuck 31 contacts the film substrate S disposed at the processing position, the position of the film substrate S is less likely to change compared to the configuration in which the film substrate S is supported only by the transport lane 12L.

  (4) The upper edge of the tray T in the standing direction is fixed by the substrate fixing unit 74 only by the film substrate S being transported together with the tray T. Therefore, the substrate fixing unit 74 fixes the position of the film substrate S while simplifying the configuration of the substrate fixing unit 74 as compared to a configuration in which the upper edge of the tray T is sandwiched from both sides in the carry-in / out direction. be able to.

  (5) The reverse sputtering process of the film substrate S is performed in a state where the surface of the target 21 is covered by the shutter 26. Therefore, even if the target 21 and the bias electrode 61 used for cleaning the film substrate S are installed in the same first film formation chamber 12B, the particles released from the film substrate S by the cleaning of the film substrate S are removed. Adhesion to the surface of the target 21 is suppressed. Therefore, the sputtered particles Sp emitted from the target 21 are suppressed from containing particles emitted from the film substrate S.

  (6) When the film substrate S is reverse-sputtered, a voltage having a frequency of 1 MHz or more and 6 MHz or less is applied to the film substrate S, so that the sputtering rate of the film substrate S is increased. Further, the in-plane distribution at the sputtering rate of the film substrate S is also enhanced.

  (7) When the film substrate S is reverse-sputtered, a voltage having a frequency of 13 MHz to 28 MHz and a voltage having a frequency of 100 kHz to 1 MHz are superimposed on the film substrate S. Speed is increased. Further, the in-plane distribution at the sputtering rate of the film substrate S is also enhanced.

In addition, the said embodiment can also be suitably changed and implemented as follows.
The high frequency power supplied from the high frequency power supply 62 for bias does not have to have a frequency of 1 MHz to 6 MHz. Even with such a configuration, since the surface of the film substrate S facing the target 21 is reverse-sputtered, the film substrate S can be cleaned.

  When the high frequency power supplied from the bias high frequency power supply 62 is 13 MHz or more and 28 MHz or less, the high frequency power having a frequency of 100 kHz or more and 1 MHz or less may not be superimposed. Even with such a configuration, since the surface of the film substrate S facing the target 21 is reverse-sputtered, the film substrate S can be cleaned.

  The shutter 26 may not be attached to the first film forming chamber 12B. In the case of such a configuration, a reverse sputtering processing chamber in which the film substrate S is cleaned may be provided separately from the processing chamber in which the thin film is formed on the film substrate S. In this case, the bias electrode 61 and the high frequency power source 62 for bias need not be installed in the first film forming chamber 12B. In the reverse sputtering process chamber, the electrostatic chuck, the displacement unit, the bias electrode, the high frequency power source for bias, and the ground electrode serving as the anode are the same as those in the first film forming chamber 12B described above. Should just be installed. Thereby, it is possible to suppress the particles emitted from the film substrate S from adhering to the surface of the target 21. However, since a processing chamber for cleaning the film substrate S is provided separately, on the premise that the installation area of the vacuum chamber 12 does not change, the installation area of the sputtering apparatus 10 increases as the number of processing chambers increases. .

  When the processing chamber different from the first film formation chamber 12B is provided as described above, the substrate processing unit is not limited to the configuration embodied by the bias electrode 61 and the bias high-frequency power source 62, For example, the following configuration may be used.

  As shown in FIG. 14, the vacuum chamber 12 includes an etching chamber 12D in addition to the reversing chamber 12A, the first film-forming chamber 12B, and the second film-forming chamber 12C. The film forming chamber 12B is arranged with the reversing chamber 12A sandwiched in the transport direction. Then, the carry-in / out chamber 11 and the second film formation chamber 12C are arranged with the reversing chamber 12A interposed therebetween in the carry-in / out direction. Even when the first film forming chamber 12B, the second film forming chamber 12C, and the etching processing chamber 12D are connected to the reversing chamber 12A, the exhaust unit 12V that exhausts the vacuum chamber 12 is provided in the reversing chamber. 12A. A high frequency antenna 91 is mounted outside the etching processing chamber 12D. The high frequency antenna 91 is connected to an antenna high frequency power source 92 that supplies high frequency power having a frequency of 13.56 MHz, for example. Yes.

  In such a configuration, the etching gas supply unit 93 supplies, for example, argon gas into the etching processing chamber 12D, and the high frequency power supply 92 for the antenna supplies high frequency power to the high frequency antenna 91, thereby generating plasma in the etching processing chamber 12D. Is done. Then, the high-frequency power source 62 for bias supplies high-frequency power to the bias electrode 61 so that positive ions in the plasma are drawn toward the film substrate S. Thereby, the surface facing the target 21 in the film substrate S is etched. When the film substrate S is etched, the electrostatic chuck 31 cools the film substrate S, thereby preventing the temperature of the film substrate S from being raised.

  The gas supplied by the etching gas supply unit 93 is not limited to argon gas, but may be nitrogen gas, oxygen gas, carbon tetrafluoride gas, sulfur hexafluoride gas, nitrogen trifluoride gas, or the like. The high-frequency antenna 91, the antenna high-frequency power source 92, the etching gas supply unit 93, the bias electrode 61, and the bias high-frequency power source 62 constitute an etching processing unit.

  Alternatively, as shown in FIG. 15, the vacuum chamber 12 includes an ion processing chamber 12E instead of the above-described etching processing chamber 12D, and an ion gun 94 as an ion processing unit is mounted in the ion processing chamber 12E. Good. A displacement portion that swings the ion gun 94 in the transport direction is connected to the ion gun 94. The displacement portion swings the ion gun 94 between a position facing one end of the film substrate S arranged at the processing position in the transport direction and a position facing the other end. Thereby, the entire surface of the film substrate S is irradiated with an ion beam.

  Even with such a configuration, for example, the film substrate S is cleaned by an ion bombardment process in which an ion beam generated from argon gas is irradiated onto the surface of the film substrate S facing the ion gun 94. When the ion bombardment process is performed on the film substrate S, the electrostatic chuck 31 cools the film substrate S, thereby preventing the temperature of the film substrate S from being raised. The gas used for generating the ion beam is not limited to argon gas, but may be nitrogen gas, oxygen gas, hydrogen gas, or the like.

  In the ion processing chamber 12E, the electrostatic chuck and the displacement portion 32 are not installed, and the ion gun 94 may be disposed on both sides of the film substrate S in the carry-in / out direction. In this case, a plurality of, for example, 2 to 8 ion guns 94 are fixed to each of the positions facing each surface in the film substrate S, and each ion beam is applied to the film substrate S being conveyed by the conveyance lane 12L. Irradiated from the ion gun 94. Thereby, ion bombardment processing is performed on two surfaces facing each other on the film substrate S.

  As described above, when the vacuum chamber 12 is provided in the reverse sputtering process chamber separately from the first film formation chamber 12B, as shown in FIGS. 14 and 15, the second film formation chamber 12C What is necessary is just to install in the reverse side with respect to the inversion chamber 12A with respect to the inversion chamber 12A in the carrying in / out direction.

  The sputtering apparatus 10 may have a configuration related to cleaning of the film substrate S, that is, a configuration in which the bias electrode 61, the bias high-frequency power source 62, the etching processing chamber 12D, and the ion processing chamber 12E are not mounted.

  -The board | substrate fixing | fixed part 74 is not restricted to the structure which supports the upper edge of the tray T in the upper end part of the standing direction of the film board | substrate S, but the upper edge of the tray T in the center of the upper side of the standing direction of the film board | substrate S A supporting structure may be used. In this case, the groove width of the holding groove 74h formed in the substrate fixing portion 74 is substantially the same as the width along the carry-in / out direction in the tray T over the entire conveyance direction in the substrate fixing portion 74, And what is necessary is just the width | variety which the tray T can pass through the clamping groove 74h. Even with such a configuration, the same effect as the above (3) can be obtained.

  In addition, the board | substrate fixing | fixed part 74 should just be the structure which supports either the position of the upper side of the standing direction of the film board | substrate S not only in the upper edge part and center part in the standing direction of the film board | substrate S, but by such a structure. Also, the same effect as the above (3) can be obtained.

  The substrate fixing unit 74 may not be attached to the upper wall of the first film formation chamber 12B and the upper wall of the second film formation chamber 12C. Even in such a configuration, when the electrostatic chuck 31 comes into contact with the film substrate S and the film substrate S is pressed toward the target 21, the tray T has a mass such that the tray T is not displaced by the pressing. If so, the position of the film substrate S is unlikely to change. Further, as long as the lower end of the standing direction in the tray T is supported by the transport lane 12L, the position of the film substrate S is not much different from that of the configuration not supported by the transport lane 12L.

  The electrostatic chuck 31 may not be connected to the displacement portion 32 that changes the position of the electrostatic chuck 31 in the carry-in / out direction, and the position of the electrostatic chuck 31 in the carry-in / out direction is fixed to the above-described contact position. Thus, a configuration in which the position of the tray T in the carry-in / out direction changes with respect to the electrostatic chuck 31 may be adopted. Even with such a configuration, it is possible to obtain the effect according to the above (1) as long as the film substrate S is cooled by the electrostatic chuck 31.

  The electrostatic chuck 31 may include a plurality of insulating plates, and a chuck electrode may be disposed in each insulating plate. Even if it is such a structure, as long as the film board | substrate S is adsorb | sucked by each insulating plate, it is possible to acquire the effect according to said (1).

  The electrostatic chuck 31 may be configured to include one positive electrode 42a and one negative electrode 42b. Alternatively, the electrostatic chuck 31 is not limited to a so-called bipolar electrostatic chuck including the positive electrode 42a and the negative electrode 42b, and may be a so-called monopolar electrostatic chuck including only one of the positive electrode and the negative electrode. Even if it is such a structure, as long as the film substrate S is adsorbed by the electrostatic chuck, it is possible to obtain the effect according to the above (1).

  The gas used for reverse sputtering is not limited to the above-described argon gas, but may be nitrogen gas, oxygen gas, hydrogen gas, carbon tetrafluoride gas, sulfur hexafluoride gas, and nitrogen trifluoride gas. A mixed gas in which two or more gases are mixed may be used.

  When a gas containing fluorine is used in the reverse sputtering process in the first film forming chamber 12B or the reverse sputtering process chamber, or in the etching process in the etching process chamber 12D, each processing chamber in the transport direction and the inversion chamber 12A It is preferable that a gate valve is attached between the two and the exhaust part is attached to each processing chamber.

  In the carry-in / out chamber 11, a mechanism for heating the film substrate S in order to remove the gas adsorbed on the film substrate S may be provided. Alternatively, the sputtering apparatus 10 may include a processing chamber having a mechanism for heating the film substrate S between the carry-in / out chamber 11 and the reversing chamber 12A.

  The vacuum chamber 12 does not have to be configured to include two film forming chambers, and may be configured to include at least one film forming chamber. Alternatively, the vacuum chamber 12 may include a reverse sputtering processing chamber, an etching processing chamber, and an ion processing chamber without including a film formation chamber.

  The flow rate of argon gas supplied when the film substrate S is sputtered, the flow rate of argon gas supplied when the adhesion layer is formed by the first film forming unit 20A, and the seed by the second film forming unit 20B The flow rates of argon gas supplied when the layer is formed may be different from each other. Even in such a configuration, if the argon gas is continuously supplied into the first film forming chamber 12B, the supply of the argon gas is stopped as compared with the configuration in which the sputtering of the film substrate S is stopped at the same time. Thus, plasma is likely to be generated in the first film forming chamber 12B.

  At the same time as the reverse sputtering of the film substrate S is completed, the supply of the argon gas into the first film forming chamber 12B is stopped, and the formation of the adhesion layer in the first film forming unit 20A is started. The supply may be started. Further, the sputtering gas supply unit 25 of the second film forming unit 20B may supply argon gas to the vacuum chamber 12 only when the seed layer is formed in the second film forming chamber 12C.

  DESCRIPTION OF SYMBOLS 10 ... Sputtering device, 11 ... Carrying in / out chamber, 11L ... Carrying in / out lane, 11V, 12V ... Exhaust part, 12 ... Vacuum chamber, 12A ... Inversion chamber, 12B ... 1st film-forming chamber, 12C ... 2nd film-forming chamber, 12D ... Etching chamber, 12E ... Ion chamber, 12L ... Transport lane, 12R ... Substrate rotating unit, 12RD ... Substrate rotating unit driving circuit, 12VD ... Exhaust unit driving circuit, 13 ... Gate valve, 20A ... First film forming unit, 20B ... second film forming unit, 21 ... target, 22 ... backing plate, 23 ... target power supply, 24 ... magnetic circuit, 25 ... sputter gas supply unit, 25D ... sputter gas supply unit drive circuit, 26 ... shutter, 26D ... shutter Drive circuit 31 ... Electrostatic chuck 32 ... Displacement part 32D ... Displacement part drive circuit 41 ... Insulating plate 42 ... Chuck electrode 42a ... Positive electrode 42b ... Negative Electrode 43 ... Chuck power source 43a ... Positive power source 43b ... Negative power source 51 ... Refrigerant circulation part 61 ... Bias electrode 61h ... Cooling hole 62 ... High frequency power source for bias 71 ... Conveying rail 72 73 ... Conveyance motor, 73D ... Conveyance motor drive circuit, 74 ... Substrate fixing unit, 74h ... Nipping width, 80 ... Control device, 91 ... High frequency antenna, 92 ... High frequency power supply for antenna, 93 ... Etching gas supply unit, 94 ... Ion gun , S ... film substrate, T ... tray.

Claims (7)

A substrate processing unit for processing a thin substrate;
A cooling unit for cooling the thin substrate,
The cooling part is
A thin substrate processing apparatus that cools the thin substrate by electrically adsorbing the thin substrate on which the processing by the substrate processing unit is performed. A transport unit for transporting the thin substrate between a processing position where the thin substrate is processed by the substrate processing unit and a non-processing position where the thin substrate is not processed by the substrate processing unit;
A displacement part that changes the position of the cooling part with respect to the thin substrate disposed at the processing position;
The displacement portion is
Changing the position of the cooling unit between a contact position where the cooling unit contacts the thin substrate and a non-contact position where the cooling unit does not contact the thin substrate;
The transport unit is
The thin substrate processing apparatus according to claim 1, wherein the thin substrate is transported in a state where the cooling unit is disposed at the non-contact position. The transport unit is
Standing the thin substrate, supporting the lower end of the thin substrate in the standing direction with the thin substrate being movable between the processing position and the non-processing position,
The thin substrate processing apparatus according to claim 2, further comprising a substrate fixing portion that fixes the thin substrate disposed at the processing position at an upper end in the standing direction. The substrate processing unit includes:
A film forming unit that forms a thin film on the thin substrate by sputtering, a reverse sputtering processing unit that applies a bias voltage to the thin substrate, an ion processing unit that performs ion bombardment processing on the thin substrate, and plasma using an induction coil The thin substrate processing apparatus according to claim 1, further comprising: an etching processing unit that applies a bias voltage to the thin substrate while generating The substrate processing unit is composed of the film forming unit and the reverse sputtering processing unit,
A vacuum chamber in which the surface of the target of the film forming unit is exposed;
A shutter that covers the surface of the target;
The thin substrate processing apparatus according to claim 4, wherein the reverse sputtering processing unit performs reverse sputtering on a surface of the thin substrate facing the target in a state where the shutter covers the surface of the target. The substrate processing unit is the reverse sputtering processing unit,
A voltage application unit for applying a bias voltage to the thin substrate;
A gas supply unit for supplying gas to the thin substrate,
The voltage application unit includes:
The thin substrate processing apparatus according to claim 4, wherein a bias voltage having a frequency of 1 MHz to 6 MHz is applied to the thin substrate to which the gas is supplied. The substrate processing unit is the reverse sputtering processing unit,
A voltage application unit for applying a bias voltage to the thin substrate;
A gas supply unit for supplying gas to the thin substrate,
The voltage application unit includes:
The thin substrate processing apparatus according to claim 4, wherein a bias voltage having a frequency of 13 MHz to 28 MHz and a bias voltage having a frequency of 100 kHz to 1 MHz are applied to the thin substrate to which the gas is supplied.

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