JP2014132566A - Plasma generator - Google Patents

Abstract

PROBLEM TO BE SOLVED: To generate plasma only at a portion in contact with air, thereby eliminating discharge at an unnecessary portion and reducing generation of ozone.SOLUTION: An embodiment comprises: an annular low dielectric layer 2 disposed to surround a flow channel R; a first electrode 3 and a second electrode 4 disposed to have the low dielectric layer 2 therebetween and surround the flow channel R; and an annular high dielectric layer disposed between at least one of the first electrode 3 and the second electrode 4 and the low dielectric layer 2 to surround the flow channel R.

Description

  The present invention relates to a plasma generator.

  The need for air quality control in the living environment, such as sterilization and deodorization, is increasing due to the increase in infectious risk seen in the recent epidemic of atopy, asthma and allergy symptoms and the outbreak of new influenza. In addition, as the life becomes richer, the amount of stored foods has increased and the chances of storing uneaten foods have increased, and environmental control in storage devices represented by refrigerators has also become more important.

  In recent years, means for generating plasma in the atmosphere and attempting to sterilize and deodorize by using chemically active species generated there has been increasing.

Technologies for generating plasma in the atmosphere by discharge and performing sterilization and deodorization with ions or radicals (hereinafter referred to as active species) generated therein can be classified into the following two types.
(1) A so-called passive plasma generator that reacts bacteria and viruses floating in the atmosphere (hereinafter referred to as floating bacteria) or malodorous substances (hereinafter referred to as odor) with active species within a limited volume in the device ( For example, Patent Document 1)
(2) The active species generated in the plasma generator are discharged into a closed space (for example, a living room, a toilet, a passenger car, etc.) having a volume larger than that of (1), and the active species, airborne bacteria and odors in the atmosphere So-called active-type plasma generator that reacts by collision with the plasma (for example, Patent Document 2)

  However, in the passive type plasma generator, the effect is limited only to airborne bacteria and odors contained in the air flow flowing into the apparatus, and in the active type plasma generator, airborne bacteria, adherent bacteria, and odors with low concentrations are present. You can only expect an effect on. That is, what can be realized by using the prior art is limited to either “sterilization and deodorization of airborne bacteria” or “sterilization of low-concentration airborne bacteria, attached bacteria and deodorization of attached odor”.

  Here, as a plasma generator having both the above-described passive type and active type, as shown in Patent Document 3, two conductor substrates having fluid flow holes are made to face each other, and the opposing surfaces of these conductor substrates are made to face each other. It has been considered that a dielectric film is formed on at least one and plasma discharge is generated in a gap formed between the two substrates.

  However, since plasma discharge is generated in a gap region away from the fluid circulation hole, there is a problem that oxygen in the air staying in the gap is ozonized and the amount of generated ozone is increased.

JP 2002-224211 JP 2003-79714 A JP 2007-250284 A

  Therefore, the present invention has been made to solve the above-mentioned problems, and it is intended to suppress the generation of ozone by generating plasma only in a portion that comes into contact with air and eliminating discharge in unnecessary portions. It is to be an issue.

  That is, a plasma generator according to the present invention includes an annular low dielectric layer provided so as to surround a flow path, a first electrode provided so as to sandwich the low dielectric layer and surround the flow path, and A second electrode; and an annular high dielectric layer provided so as to surround the flow path between at least one of the first electrode or the second electrode and the low dielectric layer. To do.

  In such a case, an annular low dielectric layer is provided so as to surround a flow path through which air flows, and plasma is generated in the low dielectric layer. Only plasma can be generated and generation of ozone can be suppressed. In addition, since plasma is not generated in unnecessary portions, power efficiency can be improved. Furthermore, it is the structure which generates a plasma only in the part which faces the flow path through which air distribute | circulates, can make air and plasma contact efficiently, and can improve deodorizing, decomposition | disassembly, and disinfection performance.

  As a specific embodiment, the low dielectric layer and the high dielectric layer are provided on an inner peripheral surface of the flow path forming hole, having an insulating substrate provided with a flow path forming hole for forming the flow path. It is desirable to be provided. In this case, it is only necessary to form the low dielectric layer and the high dielectric layer on the inner peripheral surface of the flow path forming hole, and the configuration of the plasma generator can be simplified. In addition, plasma can be generated without depending on the thickness of the insulating substrate, and the degree of freedom in design can be increased. With such a configuration, when a voltage is applied to the first electrode and the second electrode, an electric field is generated so that most of the lines of electric force pass through the high dielectric layer. In the low dielectric layer, an electric force is generated inside the flow path. The electric field concentrates so that the lines protrude, and plasma is likely to be generated.

  An annular first electrode is provided at one opening edge of the flow path forming hole in the insulating substrate, and an annular second electrode is provided at the other opening edge of the flow path forming hole in the insulating substrate. It is desirable. Here, as the shape of the first electrode and the second electrode, the distance from the opening edge of the flow path forming hole to the radially inner end of the electrode is 1 μm to 500 μm, and the width of the conductor layer is 10 μm to 5000 μm. The resistivity is preferably 1Ω (per unit length) or more. In this case, since the areas of the first electrode and the second electrode can be reduced, the capacitance of the electrode is reduced, and the load on the drive circuit for applying a voltage to the electrode can be reduced. As a result, it is possible to suppress an increase in electric capacity while increasing the area of the insulating substrate and having a plurality of flow path forming holes.

  It is desirable that the low dielectric layer is formed by forming a groove along the circumferential direction in a high dielectric layer provided on substantially the entire inner peripheral surface of the flow path forming hole. In this case, for example, the high dielectric layer can be formed on the inner peripheral surface of the flow path forming hole and then the groove can be formed, and the configuration of the plasma generator can be simplified.

  It is conceivable that the cross-sectional shape of the groove is rectangular, trapezoidal, triangular, or semicircular. In order to generate plasma in the groove, the relative dielectric constant of the high dielectric layer is 10 to 5000, preferably 100 to 3000, the thickness of the high dielectric layer is 1 μm to 500 μm, and the depth of the groove Is 1 μm to 500 μm, the width of the groove is 1 μm to 500 μm, preferably 1 μm to 100 μm, and the applied voltage is 100 V to 5000 V. Further, when the high dielectric layer is divided by the grooves, the distance of the high dielectric layer is 1 μm to 500 μm, preferably 1 μm to 100 μm. Furthermore, when the cross-sectional shape of the groove is trapezoidal or triangular, the opening angle is 10 degrees to 60 degrees. When the cross-sectional shape of the groove is a semicircular shape, the radius is 1 μm to 500 μm.

  It is desirable that irregularities be formed on the inner surface of the groove. At this time, the unevenness of the inner surface is preferably Rz 10 μm to 100 μm and Sm 10 μm to 100 μm (specified by the line roughness).

  A groove is formed along a circumferential direction in a high dielectric layer provided on substantially the entire inner peripheral surface of the flow path forming hole, and a low dielectric material is provided in the groove, whereby the low dielectric layer is formed. It is desirable that it be formed. Here, in order to generate plasma in the groove, it is desirable that the relative dielectric constant of the high dielectric layer is 100 to 3000, and the relative dielectric constant of the low dielectric layer is 1 to 10.

  The low dielectric material is configured such that one of the first electrode and the second electrode is made of a conductive substrate provided with a flow path forming hole for forming the flow path, and communicates with the flow path forming hole of the conductive substrate. It is desirable that the other of the layer, the high dielectric layer, and the first electrode or the second electrode is provided.

  The plasma generator according to the present invention includes a low dielectric layer, a first electrode and a second electrode provided so as to sandwich the low dielectric layer, and a gap between the first electrode and the low dielectric layer. A first high dielectric layer, and a second high dielectric layer provided between the second electrode and the low dielectric layer, the first high dielectric layer and the second high dielectric layer. Plasma is generated between the body layers.

  If it is such, since it is set as the structure which generate | occur | produces a plasma between the 1st high dielectric material layer and the 2nd high dielectric material layer which pinched | interposed the low dielectric material layer, the part which contacts the air which distribute | circulates It is possible to generate plasma only in this case and to suppress generation of ozone. In addition, since plasma is not generated in unnecessary portions, power efficiency can be improved. Furthermore, it is the structure which generates a plasma only in the part which faces the flow path through which air distribute | circulates, can make air and plasma contact efficiently, and can improve deodorizing, decomposition | disassembly, and disinfection performance. In addition, since plasma is generated between the first high dielectric layer and the second high dielectric layer, plasma is generated between the electrodes and between the electrode and the high dielectric layer. Compared with the case of making it, the plasma generation | occurrence | production area | region can be increased, the generation efficiency of a plasma can be improved, and deodorizing, decomposition | disassembly, and disinfection performance can be improved.

  As a specific embodiment, the low dielectric layer is made of a low dielectric material and has a flat plate shape having a side surface extending in one direction. The first high dielectric layer and the second high dielectric layer It is desirable that a dielectric layer is disposed across the side surface of the low dielectric layer, and plasma is generated on or near the side surface of the low dielectric layer. That is, on one side surface of a structure formed by stacking the low dielectric layer, the first high dielectric layer, the second high dielectric layer, the first electrode, and the second electrode, The side surface of the low dielectric layer, the side surface of the first high dielectric layer, and the side surface of the second high dielectric layer are exposed, and the side surface of the first high dielectric layer and the side surfaces of the first high dielectric layer disposed across the side surface of the low dielectric layer. It is desirable to generate plasma between the sides of the two high dielectric layers.

  The plasma generator includes a support made of a low dielectric constant material extending in one direction, and the first high dielectric layer extends along the extending direction on one opposing surface along the extending direction of the support. The second high dielectric layer is formed along the extending direction on the other facing surface side along the extending direction of the support, and the low dielectric layer is formed of the first dielectric layer. It is desirable that the high dielectric layer is formed between an end surface along the extending direction in the high dielectric layer and an end surface along the extending direction in the second high dielectric layer.

  Preferably, the support includes a plurality of linear structures provided with the first high dielectric layer, the second high dielectric layer, the low dielectric layer, the first electrode, and the second electrode. . If this is the case, a large-area plasma generator can be constructed utilizing the elongated structure.

  It is desirable that the plurality of linear structures are knitted. In this case, the strength can be increased.

  A linear structure having the first high dielectric layer, the second high dielectric layer, the low dielectric layer, the first electrode, and the second electrode provided on the support; However, it is desirable to arrange in a predetermined region by bending or bending. If this is the case, it is possible to increase the contact area with air in a predetermined range using a single linear structure, and to simplify the electrical wiring. That is, an extremely simple electric wiring in which a driving circuit is connected to one end of one linear structure can be obtained.

  The plasma generator according to the present invention further includes an insulating member extending in one direction, a low dielectric layer formed along the extending direction on the outer surface of the insulating member, and the low dielectric layer sandwiched between the extending direction and the extending direction. And a high dielectric layer provided along the extending direction between at least one of the first electrode or the second electrode and the low dielectric layer, and It is characterized by providing.

  In such a case, since the low dielectric layer is formed on the outer surface of the insulating member and the plasma is generated by the low dielectric layer, the plasma is generated only in the portion in contact with the external air. And generation of ozone can be suppressed. In addition, since plasma is not generated in unnecessary portions, power efficiency can be improved. Furthermore, it is the structure which generates a plasma only in the part which contacts external air, can make air and a plasma contact efficiently, and can improve deodorizing, decomposition | disassembly, and disinfection performance. In addition, the plasma generator can be linear, and pressure loss can be greatly reduced.

  According to the present invention configured as described above, it is possible to generate plasma only in a portion in contact with air, eliminate discharge in an unnecessary portion, and suppress generation of ozone.

Sectional drawing of the plasma generator which concerns on this embodiment. The top view which shows typically the structure of the plasma generator of the embodiment. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment. The perspective view of the plasma generator concerning a modification embodiment. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment. The perspective view of the plasma generator concerning a modification embodiment. The figure which shows the application example of the plasma generator which concerns on deformation | transformation embodiment. The figure which shows another application example of the plasma generator which concerns on deformation | transformation embodiment. The schematic diagram which shows the plasma generator which has a ventilation means. The sectional view and side view of the plasma generator concerning a modification. Sectional drawing of the plasma generator which concerns on deformation | transformation embodiment.

  An embodiment of a plasma generator according to the present invention will be described below with reference to the drawings.

  As shown in FIG. 1, the plasma generating apparatus 100 according to the present embodiment sandwiches an annular low dielectric layer 2 provided so as to surround the flow path R, and the low dielectric layer 2. An annular first high-dielectric layer provided so as to surround the flow path R between the first electrode 3 and the second electrode 4 provided so as to surround the first electrode 3 and the first electrode 3 and the low-dielectric layer 2 5 and an annular second high dielectric layer 6 provided so as to surround the flow path R between the second electrode 4 and the low dielectric layer 2.

  Specifically, as shown in FIG. 2, the plasma generator 100 includes an insulating substrate 7 made of, for example, a low dielectric material having a rectangular flat plate shape in which a plurality of flow path forming holes 71 for forming the flow path R are formed. As shown in FIG. 1, the annular low dielectric layer 2 is formed on the inner peripheral surface 71a of the flow path forming hole 71 formed in the insulating substrate 7, and the low dielectric layer 2, the first high dielectric layer 5 and the second high dielectric layer 6 are formed.

  An annular first electrode 3 is provided at one opening edge of the flow path forming hole 71 in the insulating substrate 7, and an annular second electrode is provided at the other opening edge of the flow path forming hole 71 in the insulating substrate 7. 4 is provided. Here, the first electrode 3 is provided in contact with the first high dielectric layer 5, and the second electrode 4 is provided in contact with the second high dielectric layer 6. A drive circuit (not shown) is connected to the first electrode 3 and the second electrode 4. By this drive circuit, for example, a pulse voltage is applied to each electrode 3, 4, and the peak value of the pulse voltage is obtained. The range is from 100 V to 5000 V, and the pulse width is from 0.1 μs to 300 μs.

  Furthermore, in the present embodiment, the low dielectric layer 2 is formed on the high dielectric layer made of a high dielectric film provided on substantially the entire inner peripheral surface 71a of the flow path forming hole 71, along the circumferential direction. It is comprised by forming. That is, the low dielectric layer 2 of the present embodiment is composed of air. The cross-sectional shape of the groove M in FIG. 1 is a triangular shape, but may be a rectangular shape, a trapezoidal shape, or a semicircular shape. The thickness in the direction (radial direction) perpendicular to the flow path of the low dielectric layer 2 matches the depth of the groove M formed in the high dielectric layer or the radial thickness of the high dielectric layer.

  In the plasma generating apparatus 100 configured as described above, when a voltage is applied to the first electrode 3 and the second electrode 4, most of the electric field lines are the first high dielectric layer 5 and the second high dielectric layer. 6, the electric field concentrates in the low dielectric layer 2 so that the lines of electric force project inside the flow path R, and plasma is likely to be generated. That is, plasma is generated so as to protrude into the flow path R.

  Here, the electric field in the low dielectric layer 2 is applied by the relative dielectric constant of the high dielectric layers 5 and 6, the thickness of the high dielectric layers 5 and 6, the depth of the groove M, the width of the groove M, and further applied. Depends on the voltage to be applied. For example, the dielectric constant of the high dielectric layers 5 and 6 is 10 to 5000, preferably 100 to 3000, the thickness of the high dielectric layers 5 and 6 is 1 μm to 500 μm, and the depth of the groove M is 1 μm to The width of the groove M is 1 μm to 500 μm, preferably 1 μm to 100 μm, and the applied voltage is 100 V to 5000 V. Further, the opening angle of the groove M is 10 degrees to 60 degrees.

Here, in consideration of ensuring discharge stability and safety during voltage application, the applied voltage is preferably set to 1000 V to 2000 V, and for this purpose, the relative dielectric constant of the high dielectric layers 5 and 6 is set to 100 to 3000. It is preferable to set within the range.
When the thickness of the high dielectric layers 5 and 6 is 230 μm and the thickness of the low dielectric layer 2 is 50 μm, the relationship between the relative dielectric constant of the high dielectric layers 5 and 6 and the applied voltage for generating plasma Is roughly as follows. That is, the applied voltage can be controlled within a preferable range by setting the relative dielectric constant of the high dielectric layers 5 and 6 within the above range.
When the relative dielectric constant is 50, the applied voltage is 3000V or more. When the relative dielectric constant is 100, the applied voltage is 2000V.
When the relative dielectric constant is 2000, the applied voltage is 1100V.

  According to the plasma generator 100 of the present embodiment configured as described above, an annular low dielectric layer 2 is provided so as to surround the flow path R through which air flows, and plasma is generated by the low dielectric layer 2. Therefore, it is possible to generate plasma only in a portion that comes into contact with the circulating air, and to suppress generation of ozone. In addition, since plasma is not generated in unnecessary portions, power efficiency can be improved. Furthermore, it is the structure which generates a plasma only in the part which faces the flow path R through which air distribute | circulates, can make air and plasma contact efficiently, and can improve deodorizing, decomposition | disassembly, and disinfection performance.

  Moreover, it is only necessary to form the low dielectric layer 2 and the high dielectric layers 5 and 6 on the inner peripheral surface 71a of the flow path forming hole 71, and the configuration of the plasma generator 100 can be simplified. Further, plasma can be generated by the low dielectric layer 2 formed by the groove M without depending on the thickness of the insulating substrate 7, and the degree of design freedom can be increased.

  Further, since the annular first electrode 3 and second electrode 4 are provided at the opening edge of the flow path forming hole 71 in the insulating substrate 7, the areas of the first electrode 3 and the second electrode 4 can be reduced. Thereby, the electrostatic capacitance of the electrodes 3 and 4 becomes small, and the load to the drive circuit which applies a voltage to the electrodes 3 and 4 can be made small. Therefore, an increase in electric capacity can be suppressed while increasing the area of the insulating substrate 7 and having a plurality of flow path forming holes 71.

  The present invention is not limited to the above embodiment.

  For example, as shown in FIG. 3, irregularities may be formed on the inner surface of the groove M. Here, when the groove M reaches the insulating substrate 7 and the high dielectric layer is physically separated into the first high dielectric layer 5 and the second high dielectric layer 6 as shown in FIG. Irregularities are formed on the opposing surfaces of the high dielectric layers 5 and 6. By forming irregularities on the inner surface of the groove M in this way, the plasma generation voltage can be reduced. As the uneven shape, it is conceivable that the inner surface roughness of the groove M is Rz 10 μm to 100 μm, Sm 10 μm to 100 μm (specified by the line roughness).

  Further, as shown in FIG. 4, the low dielectric material 21 may be filled in the low dielectric layer 2 of the above embodiment. In the embodiment, a groove M is formed along the circumferential direction in the high dielectric layers 5 and 6 provided on substantially the entire inner peripheral surface 71a of the flow path forming hole 71, and a low dielectric constant is formed in the groove M. By providing the body material 21, the low dielectric layer 2 is formed. In this case, it is desirable that the relative dielectric constant of the high dielectric layers 5 and 6 is 100 to 3000, and the relative dielectric constant of the low dielectric layer (low dielectric material) is 1 to 10.

  Further, as shown in FIG. 5, the first electrode 3 is composed of a conductor substrate 30 provided with a channel forming hole 31 for forming the channel R, and communicates with the channel forming hole 31 of the conductor substrate 30. The low dielectric material 21, which is a low dielectric layer, the first high dielectric layer 5, the second high dielectric layer 6, and the second electrode 4 may be provided. In this case, the low dielectric material 21, the first high dielectric layer 5, and the second high dielectric layer 6 are provided on the inner peripheral surface 71 a of the flow path forming hole 71 of the insulating substrate 7 as in the above embodiment. ing. That is, the insulating substrate 7 and the conductor substrate 30 are laminated so that the flow path forming hole 71 of the insulating substrate 7 and the flow path forming hole 31 of the conductor substrate 30 communicate with each other. The first electrode 3 and the second electrode 4 may be reversed, and the second electrode 4 may be a conductor substrate having a flow path forming hole. In addition, both the first electrode 3 and the second electrode 4 may be conductive substrates having flow path forming holes.

  In addition, as shown in FIG. 6 and FIG. 7, the support 8 made of a low dielectric constant material extending in one direction, and formed on one opposing surface side along the extending direction of the support 8 along the extending direction. The first high dielectric layer 5, the second high dielectric layer 6 formed along the extending direction on the other facing surface side along the extending direction of the support 8, and the first high dielectric layer 5. And the low dielectric layer 2 formed between the second high dielectric layer 6, the first electrode 3 provided in contact with the first high dielectric layer 5, and the second high dielectric layer 6. The second electrode 4 provided may be provided.

  Here, the support body 8 is a rod-shaped member having a rectangular cross section, for example. The first high dielectric layer 5, the second high dielectric layer 6, and the low dielectric layer 2 are configured by forming grooves M in the high dielectric layer along the extending direction, as in the above embodiment. It is possible to do. Further, the first electrode 3 and the second electrode 4 are formed on the outer surfaces of the first high dielectric layer 5 and the second high dielectric layer 6. In addition, the 1st electrode 3 and the 2nd electrode 4 may be formed in the whole in the said outer surface, and may be formed in the part. In addition, the first electrode 3 and the second electrode 4 may be formed to be embedded between the first high dielectric layer 5 and the second high dielectric layer 6 and the support 8.

  In addition, as shown in FIG. 8 and FIG. 9, the support 8 made of a low dielectric constant material extending in one direction, and formed on one opposing surface side along the extending direction of the support 8 along the extending direction. The first high dielectric layer 5, the second high dielectric layer 6 formed along the extending direction on the other facing surface side along the extending direction of the support 8, and the first high dielectric layer 5. And the low dielectric layer 2 formed between the second high dielectric layer 6, the first electrode 3 provided in contact with the first high dielectric layer 5, and the second high dielectric layer 6. The second electrode 4 provided may be provided.

  Here, the support body 8 is, for example, a glass fiber having a circular cross section. The first high dielectric layer 5, the second high dielectric layer 6, and the low dielectric layer 2 are configured by forming grooves M in the high dielectric layer along the extending direction, as in the above embodiment. It is possible to do. Further, the first electrode 3 and the second electrode 4 are formed on the inner surfaces of the first high dielectric layer 5 and the second high dielectric layer 6.

  Then, the plasma generator 100 applies the first high dielectric layer 5, the second high dielectric layer 6, the low dielectric layer 2, the first electrode 3, and the second electrode 4 to the support 8. A plurality of linear structures 10 are provided, and as shown in FIG. 10, they may be arranged in a lattice shape or knitted in a mesh shape, for example. In this case, the pressure loss can be greatly reduced and the contact area with the air can be increased without hindering the air flow. Also, the mechanical strength can be increased.

  Furthermore, as shown in FIG. 11, the first high dielectric layer 5, the second high dielectric layer 6, the low dielectric layer 2, the first electrode 3, and the second electrode are formed on the support 8. It can be considered that the linear structure 10 provided with the electrodes 4 is arranged in a predetermined region by bending or bending. For example, it is conceivable that one linear structure 10 is configured to be deformed into a coil shape and spread on a plane. In this case, the circuit configuration can be greatly simplified by connecting a drive circuit to one end of the linear structure 10.

  In addition, as shown in FIG. 12, it may have an air blowing means 9 for generating an air flow in the flow path R. The blower unit 9 is, for example, a blower fan, and may be disposed at either the front stage or the rear stage of the flow path R as long as it generates an air flow in the flow path R. Note that the deodorizing performance / sterilizing performance of the plasma generator 100 configured in this manner depends on the air flow rate, the wind speed, the voltage of the drive circuit, the AC frequency, the distance between the pumazuma generator and the attached bacteria, and the like.

  Further, the present invention may be as shown in FIG. A plasma generator 100 shown in FIG. 13 has a flat plate shape as a whole, and includes a low dielectric layer 2, a first electrode 3 and a second electrode 4 provided so as to sandwich the low dielectric layer 2, A first high dielectric layer 5 provided between the first electrode 3 and the low dielectric layer 2, and a second high dielectric layer 6 provided between the second electrode 4 and the low dielectric layer 2. I have.

  The low dielectric layer 2 is made of a low dielectric material such as glass (relative dielectric constant is 1 to 10) and has a flat plate shape having side surfaces 2a and 2b extending in one direction. The thickness of the low dielectric layer is 10 μm to 100 μm.

The first high dielectric layer 5 and the second high dielectric layer 6 are made of a high dielectric material (relative permittivity is 100 to 3000) such as a mixture of barium titanate (BaTiO ₃ ) and glass, and the side surface It is arrange | positioned on both sides on both sides of 2a and 2b. The thicknesses of the high dielectric layers 5 and 6 are 150 μm to 500 μm.

  The first electrode 3 is a metal layer provided on the outer surface of the first high dielectric layer 5 and made of, for example, silver (Ag). The second electrode 4 is a metal layer provided on the outer surface of the second high dielectric layer 6 and made of, for example, silver (Ag).

  On both side surfaces (left and right side surfaces in FIG. 13) of the plasma generator 100 configured in this way, the side surfaces 2a and 2b of the low dielectric layer 2, the side surfaces 5a and 5b of the first high dielectric layer 5, and the second height The side surfaces 6a and 6b of the dielectric layer 6 are substantially flush with each other and have no gap.

Then, the first electrode 3 and the second electrode 4 of the plasma generator 100 are applied to each of the electrodes 3 and 4 with a pulse voltage (with a peak value of 100 V or more) by a drive circuit (not shown) as in the above embodiment. When the pulse width is within the range of 5000 V or less and the pulse width is 0.1 μsec or more and 300 μsec or less), the side surfaces 5a and 5b of the first high dielectric layer 5 and the side surfaces 6a of the second high dielectric layer 6 are applied. 6b, specifically, the side surfaces 2a and 2b of the low dielectric layer 2 generate plasma in the vicinity thereof. The ratio between the number of ions generated by the plasma generator 100 and the ozone concentration is 171 [k / cm ³ · ppb] (number of ions: 1200 [k / cm ³ ], ozone concentration: 0.007 [ppm]). The number of ions per unit circumference was 80 [k / cm ³ · mm].

  Such a plasma generator 100 is configured to generate plasma between the first high dielectric layer 5 and the second high dielectric layer 6 provided with the low dielectric layer 2 sandwiched therebetween. Plasma can be generated only in the portion that comes into contact with the air to be generated, and generation of ozone can be suppressed. In addition, since plasma is not generated in unnecessary portions, power efficiency can be improved. Furthermore, it is the structure which generates a plasma only in the part which faces the flow path through which air distribute | circulates, can make air and plasma contact efficiently, and can improve deodorizing, decomposition | disassembly, and disinfection performance. In addition, since plasma is generated between the first high dielectric layer 5 and the second high dielectric layer 6, plasma is generated between the electrodes and between the electrode and the high dielectric layer. Compared with the case of generating the plasma, the plasma generation region can be increased, the plasma generation efficiency can be improved, and the deodorization, decomposition and sterilization performance can be improved. Furthermore, the ratio between the number of ions generated by the plasma generator 100 and the ozone concentration, and the number of ions per unit circumference can be increased.

  Further, as shown in FIG. 14, the side surfaces 2 a and 2 b of the low dielectric layer 2 are made to be more than the side surfaces 5 a and 5 b of the first high dielectric layer 5 and / or the side surfaces 6 a and 6 b of the second high dielectric layer 6. The groove 100 </ b> M may be formed on the side surface of the plasma generation device 100 so as to be located inside. Note that grooves may be formed on the side surfaces 2 a and 2 b of the low dielectric layer 2. In this case, the ratio between the number of ions generated by the plasma generator 100 and the ozone concentration, and the number of ions per unit circumference can be increased, and the drive voltage can be lowered.

  In addition, it goes without saying that the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 100 ... Plasma generator R ... Flow path 2 ... Low dielectric material layer 3 ... 1st electrode 4 ... 2nd electrode 5 ... 1st high dielectric material layer 6 ... 1st 2 High dielectric layer 71 ... flow path forming hole 7 ... insulating substrate 71a ... inner peripheral surface M ... groove 31 ... flow path forming hole 30 ... conductor substrate 8 ... support Body 10 ... Linear structure

Claims (15)

An annular low dielectric layer provided to surround the flow path;
A first electrode and a second electrode provided to sandwich the low dielectric layer and surround the flow path;
A plasma generator comprising: an annular high dielectric layer provided so as to surround the flow path between at least one of the first electrode or the second electrode and the low dielectric layer. Having an insulating substrate provided with a channel forming hole for forming the channel;
The plasma generator according to claim 1, wherein the low dielectric layer and the high dielectric layer are provided on an inner peripheral surface of the flow path forming hole. An annular first electrode is provided at one opening edge of the flow path forming hole in the insulating substrate,
The plasma generating apparatus according to claim 2, wherein an annular second electrode is provided at the other opening edge of the flow path forming hole in the insulating substrate.   4. The low dielectric layer is formed by forming a groove along a circumferential direction in a high dielectric layer provided on substantially the entire inner peripheral surface of the flow path forming hole. Plasma generator.   A groove is formed along a circumferential direction in a high dielectric layer provided on substantially the entire inner peripheral surface of the flow path forming hole, and a low dielectric material is provided in the groove, whereby the low dielectric layer is formed. The plasma generator according to claim 2 or 3, wherein the plasma generator is formed.   The plasma generator according to claim 4 or 5, wherein a cross-sectional shape of the groove is rectangular, trapezoidal, triangular, or semicircular.   The plasma generator according to any one of claims 4 to 6, wherein irregularities are formed on an inner surface of the groove. One of the first electrode and the second electrode consists of a conductor substrate provided with a flow path forming hole for forming the flow path,
The plasma generator according to claim 1, wherein the other of the low dielectric layer, the high dielectric layer, and the first electrode or the second electrode is provided so as to communicate with the flow path forming hole of the conductor substrate. A low dielectric layer;
A first electrode and a second electrode provided so as to sandwich the low dielectric layer;
A first high dielectric layer provided between the first electrode and the low dielectric layer;
A second high dielectric layer provided between the second electrode and the low dielectric layer;
A plasma generator for generating plasma between the first high dielectric layer and the second high dielectric layer. The low dielectric layer is made of a low dielectric material and has a flat plate shape having side surfaces extending in one direction.
The first high dielectric layer and the second high dielectric layer are disposed across the side surface of the low dielectric layer;
The plasma generating apparatus according to claim 9, wherein plasma is generated on or near the side surface of the low dielectric layer. Comprising a support made of a low dielectric constant material extending in one direction;
The first high dielectric layer is formed along the extending direction on one facing surface side along the extending direction of the support,
The second high dielectric layer is formed along the extending direction on the other facing surface side along the extending direction of the support;
The plasma generation according to claim 9, wherein the low dielectric layer is formed between an end surface along the extending direction of the first high dielectric layer and an end surface along the extending direction of the second high dielectric layer. apparatus.   The said support body is provided with two or more linear structures which provided the said 1st high dielectric material layer, the said 2nd high dielectric material layer, the said low dielectric material layer, the said 1st electrode, and the said 2nd electrode. The plasma generator described.   The plasma generator according to claim 12, wherein the plurality of linear structures are knitted. A linear structure provided with the first high dielectric layer, the second high dielectric layer, the low dielectric layer, the first electrode, and the second electrode on the support;
The plasma generating apparatus according to claim 11, wherein the linear structure is arranged in a predetermined region by being bent or bent. An insulating member extending in one direction;
A low dielectric layer formed along the extending direction on the outer surface of the insulating member;
A first electrode and a second electrode provided along the extending direction while sandwiching the low dielectric layer;
A plasma generator comprising: a high dielectric layer provided along at least one of the first electrode and the second electrode and the low dielectric layer along a stretching direction.