JP2014130940A5 - - Google Patents

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JP2014130940A5
JP2014130940A5 JP2012288326A JP2012288326A JP2014130940A5 JP 2014130940 A5 JP2014130940 A5 JP 2014130940A5 JP 2012288326 A JP2012288326 A JP 2012288326A JP 2012288326 A JP2012288326 A JP 2012288326A JP 2014130940 A5 JP2014130940 A5 JP 2014130940A5
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temperature adjustment
liquid
substrate
organic solvent
adjustment liquid
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JP2012288326A
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JP5955766B2 (en
JP2014130940A (en
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Priority to JP2012288326A priority Critical patent/JP5955766B2/en
Priority claimed from JP2012288326A external-priority patent/JP5955766B2/en
Priority to KR1020130164205A priority patent/KR102007043B1/en
Publication of JP2014130940A publication Critical patent/JP2014130940A/en
Publication of JP2014130940A5 publication Critical patent/JP2014130940A5/ja
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Publication of JP5955766B2 publication Critical patent/JP5955766B2/en
Priority to KR1020180027058A priority patent/KR101987582B1/en
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Claims (17)

基板を保持する基板保持部と、
前記基板保持部に保持された前記基板のパターンが形成された第１面に処理液を供給する処理液ノズルと、
前記基板保持部に保持された前記基板の前記第１面と反対側の第２面に、純水と、純水と混和性がありかつ純水よりも表面張力が低い有機溶剤とを混合した混合液を温調液として供給する温調液ノズルと、
を有する液処理ユニットを備えた基板処理装置。 A substrate holder for holding the substrate;
A processing liquid nozzle for supplying a processing liquid to the first surface on which the pattern of the substrate held by the substrate holding unit is formed;
Pure water and an organic solvent that is miscible with pure water and has a lower surface tension than pure water are mixed on the second surface opposite to the first surface of the substrate held by the substrate holder. A temperature adjustment nozzle for supplying the liquid mixture as a temperature adjustment liquid;
The substrate processing apparatus provided with the liquid processing unit which has. 前記温調液ノズルに前記温調液を供給する温調液供給機構と、A temperature adjustment liquid supply mechanism for supplying the temperature adjustment liquid to the temperature adjustment liquid nozzle;
前記温調液供給機構内に存在する温調液中に含まれる前記有機溶剤の濃度を調節する手段と、Means for adjusting the concentration of the organic solvent contained in the temperature adjustment liquid existing in the temperature adjustment liquid supply mechanism;
をさらに備えた、請求項１記載の基板処理装置。The substrate processing apparatus according to claim 1, further comprising: 前記温調液ノズルに前記温調液を供給する温調液タンクと、A temperature adjustment liquid tank for supplying the temperature adjustment liquid to the temperature adjustment liquid nozzle;
前記温調液タンク内に有機溶剤供給源から有機溶剤を供給する有機溶剤供給ラインと、An organic solvent supply line for supplying an organic solvent from an organic solvent supply source into the temperature adjusting liquid tank;
前記温調液タンク内に純水供給源から純水を供給する純水供給ラインと、A pure water supply line for supplying pure water from a pure water supply source into the temperature adjusting liquid tank;
をさらに備えた、請求項１記載の基板処理装置。The substrate processing apparatus according to claim 1, further comprising: 前記処理液が、前記温調液に含まれる前記有機溶剤と同じ有機溶剤を含む、請求項１記載の基板処理装置。   The substrate processing apparatus of Claim 1 with which the said process liquid contains the same organic solvent as the said organic solvent contained in the said temperature control liquid. 前記温調液ノズルに前記温調液を供給する温調液供給機構と、
前記基板に供給された前記有機溶剤を含む処理液及び前記温調液を前記温調液供給機構に戻す戻しラインと、
前記温調液供給機構内に存在する温調液中に含まれる前記有機溶剤の濃度を調節する手段と、
をさらに備えた、請求項４記載の基板処理装置。 A temperature adjustment liquid supply mechanism for supplying the temperature adjustment liquid to the temperature adjustment liquid nozzle;
A treatment line containing the organic solvent supplied to the substrate and a return line for returning the temperature adjustment liquid to the temperature adjustment liquid supply mechanism;
Means for adjusting the concentration of the organic solvent contained in the temperature adjustment liquid existing in the temperature adjustment liquid supply mechanism;
The substrate processing apparatus according to claim 4 , further comprising: 前記温調液供給機構は、前記温調液を貯留する温調液タンクと、前記温調液タンクから出発して前記温調液タンクに再び戻る温調液ラインと、を含む循環経路を有しており、
前記温調液ノズルおよび前記戻しラインは前記循環経路に接続されており、
前記有機溶剤の濃度を調節する手段は、前記温調液タンク内に設けられるとともに前記温調液タンク中に存在する前記有機溶剤の蒸気を結露させる凝縮器と、前記凝縮器によって凝縮して液体となった前記有機溶剤を前記温調液タンク外に排出するドレンラインと、を有している、請求項５記載の基板処理装置。 The temperature adjustment liquid supply mechanism has a circulation path including a temperature adjustment liquid tank that stores the temperature adjustment liquid, and a temperature adjustment liquid line that starts from the temperature adjustment liquid tank and returns to the temperature adjustment liquid tank again. And
The temperature adjustment nozzle and the return line are connected to the circulation path,
The means for adjusting the concentration of the organic solvent is provided in the temperature adjustment liquid tank and condenses the vapor of the organic solvent present in the temperature adjustment liquid tank, and is condensed and liquidized by the condenser. The substrate processing apparatus according to claim 5 , further comprising a drain line that discharges the organic solvent that has become out of the temperature adjustment liquid tank. 前記有機溶剤の濃度を調節する手段は、前記温調液タンク内に貯留された前記温調液を前記温調液タンク外に排出する開閉弁が介設されたドレンラインと、前記温調液タンク内に純水を供給する純水供給ラインと、を有している、請求項５または６記載の基板処理装置。 The means for adjusting the concentration of the organic solvent includes a drain line provided with an open / close valve for discharging the temperature adjustment liquid stored in the temperature adjustment liquid tank to the outside of the temperature adjustment liquid tank, and the temperature adjustment liquid. The substrate processing apparatus according to claim 5 , further comprising a pure water supply line for supplying pure water into the tank. 前記基板保持部材は基板を水平姿勢で保持するとともに基板を鉛直方向軸線周りに回転させることができ、前記液処理ユニットは、前記基板保持部材により保持された基板の第１面から外方に飛散する前記有機溶剤と、前記基板保持部材により保持された基板の第２面から外方に飛散する前記温調液との両方が流れ込む排液路を有するカップを有しており、前記カップの排液路が前記戻しラインに接続されている、請求項４〜７のうちのいずれか一項に記載の基板処理装置。 The substrate holding member can hold the substrate in a horizontal posture and rotate the substrate about a vertical axis, and the liquid processing unit is scattered outward from the first surface of the substrate held by the substrate holding member. A cup having a drainage path through which both the organic solvent and the temperature control liquid splashing outward from the second surface of the substrate held by the substrate holding member flow. The substrate processing apparatus according to claim 4 , wherein a liquid path is connected to the return line. 前記有機溶剤がＩＰＡ（イソプロピルアルコール）である、請求項４〜８のうちのいずれか一項に記載の基板処理装置。 The substrate processing apparatus according to claim 4 , wherein the organic solvent is IPA (isopropyl alcohol). 前記混合液中のＩＰＡ濃度は前記基板の表面に対する前記混合液の接触角を３０度以下とする濃度である、請求項９記載の基板処理装置。 The substrate processing apparatus according to claim 9 , wherein the IPA concentration in the mixed solution is a concentration that makes a contact angle of the mixed solution with the surface of the substrate 30 ° or less. 前記ＩＰＡ濃度は１７％以上〜２５％以下である、請求項１０記載の基板処理装置。 The substrate processing apparatus according to claim 10 , wherein the IPA concentration is 17% to 25%. 基板のパターンが形成された第１面に処理液を供給することと、
前記基板の前記第１面と反対側の第２面に、純水と、純水と混和性がありかつ純水よりも表面張力が低い有機溶剤とを混合した混合液を温調液として供給することと、
を備えた基板処理方法。 Supplying a processing liquid to the first surface on which the pattern of the substrate is formed;
Supplying, as a temperature control liquid, a mixed liquid obtained by mixing pure water and an organic solvent that is miscible with pure water and has a surface tension lower than that of pure water on the second surface opposite to the first surface of the substrate. To do
A substrate processing method comprising: 前記処理液が、前記温調液に含まれる有機溶剤と同じ有機溶剤を含む、請求項１２記載の基板処理方法。 The substrate processing method of Claim 12 with which the said process liquid contains the same organic solvent as the organic solvent contained in the said temperature control liquid. 前記有機溶剤がＩＰＡ（イソプロピルアルコール）である、請求項１３記載の基板処理方法。 The substrate processing method according to claim 13 , wherein the organic solvent is IPA (isopropyl alcohol). 前記混合液中のＩＰＡ濃度は前記基板の表面に対する前記混合液の接触角を３０度以下とする濃度である、請求項１４記載の基板処理方法。 The substrate processing method according to claim 14 , wherein the IPA concentration in the mixed solution is a concentration at which a contact angle of the mixed solution with respect to the surface of the substrate is 30 degrees or less. 前記ＩＰＡ濃度は１７％以上〜２５％以下である、請求項１５記載の基板処理方法。 The substrate processing method according to claim 15 , wherein the IPA concentration is 17% to 25%. 前記温調液を基板に供給した後に回収して、前記温調液として再利用することをさらに備えた、請求項１２記載の基板処理方法。 The substrate processing method according to claim 12 , further comprising collecting the temperature adjusting liquid after supplying it to the substrate and reusing it as the temperature adjusting liquid.
JP2012288326A 2012-12-28 2012-12-28 Substrate processing apparatus and substrate processing method Active JP5955766B2 (en)

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KR1020130164205A KR102007043B1 (en) 2012-12-28 2013-12-26 Substrate processing apparatus and substrate processing method
KR1020180027058A KR101987582B1 (en) 2012-12-28 2018-03-07 Substrate processing apparatus and substrate processing method

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JP6613181B2 (en) 2016-03-17 2019-11-27 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and substrate processing method
KR101935949B1 (en) * 2016-10-07 2019-01-08 세메스 주식회사 Apparatus and Method for treating substrate
JP6815873B2 (en) 2017-01-18 2021-01-20 株式会社Ｓｃｒｅｅｎホールディングス Board processing equipment
JP6901944B2 (en) * 2017-09-20 2021-07-14 株式会社Ｓｃｒｅｅｎホールディングス Board processing method and board processing equipment
JP7250566B2 (en) * 2019-02-26 2023-04-03 東京エレクトロン株式会社 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
CN115881578A (en) * 2021-09-29 2023-03-31 盛美半导体设备(上海)股份有限公司 Substrate processing apparatus

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