JP2014130890A - Photoelectric conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photoelectric conversion device with high performance.SOLUTION: The photoelectric conversion device is configured so that a plurality of photoelectric conversion layers are laminated through interlayer insulation layers and dielectric films in contact with the interlayer insulation layers and the photoelectric conversion layers are provided between the photoelectric conversion layers.

Description

  The present invention relates to a photoelectric conversion device having a plurality of photoelectric conversion layers.

  As a photoelectric conversion device using the spectral characteristics of the photoelectric conversion layer, Patent Literature 1 describes a solid-state imaging device that performs color separation for each semiconductor chip stacked in a plurality of stages.

JP 2010-135700 A

  In the technique described in Patent Document 1, green light transmitted through the first semiconductor chip to be photoelectrically converted by the second semiconductor chip is reflected by the light reflecting surface between the first semiconductor chip and the second semiconductor chip. Then, there is a possibility of re-incident on the first semiconductor chip. Therefore, the signal charge generated by the photoelectric conversion of the green light is signal-processed as a blue signal by the first semiconductor chip, and the image quality is deteriorated. As described above, in the conventional technique, the study on photoelectric conversion of light having an appropriate wavelength with an appropriate photoelectric conversion layer is not sufficient, and good performance cannot be obtained.

  The 1st viewpoint of the means for solving the said subject is that the 1st photoelectric conversion layer which has a plurality of photoelectric conversion parts, and the 2nd photoelectric conversion layer which has a plurality of photoelectric conversion parts are said 1st photoelectric conversion layers. And a photoelectric conversion device stacked via an insulating layer disposed between the second photoelectric conversion layer and the second photoelectric conversion layer between the second photoelectric conversion layer and the insulating layer. A dielectric film in contact with both the layer and the insulating layer, the dielectric film having a refractive index between the refractive index of the second photoelectric conversion layer and the refractive index of the insulating layer; It is characterized by including a layer.

  The 2nd viewpoint of the means for solving the above-mentioned subject is that the 1st photoelectric conversion layer which has a plurality of photoelectric conversion parts, and the 2nd photoelectric conversion layer which has a plurality of photoelectric conversion parts are said 1st photoelectric conversion layers. And a photoelectric conversion device stacked via an insulating layer disposed between the first photoelectric conversion layer and the second photoelectric conversion layer, wherein the first photoelectric conversion layer is interposed between the first photoelectric conversion layer and the insulating layer. A dielectric film in contact with both the layer and the insulating layer, the dielectric film having a refractive index between a refractive index of the first photoelectric conversion layer and a refractive index of the insulating layer; It is characterized by including a layer.

  The 3rd viewpoint of the means for solving the above-mentioned subject is that the 1st photoelectric conversion layer which has a plurality of photoelectric conversion parts, and the 2nd photoelectric conversion layer which has a plurality of photoelectric conversion parts are said 1st photoelectric conversion layers. And a photoelectric conversion device stacked via an insulating film disposed between the second photoelectric conversion layer and between the first photoelectric conversion layer and the insulating film and the second photoelectric conversion layer. An antireflection film for light transmitted through the first photoelectric conversion layer is provided between each of the insulating films.

  According to the present invention, a photoelectric conversion device with good performance can be provided.

FIG. 6 is a schematic cross-sectional view of an example of a photoelectric conversion device. The cross-sectional enlarged schematic diagram of an example of a photoelectric conversion apparatus. The graph which shows a spectral reflection characteristic.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. In the following description, a plurality of drawings are referred to each other. Moreover, the same code | symbol is attached | subjected about the same or similar structure, and description is abbreviate | omitted suitably about the structure which attached the common code | symbol.

  FIG. 1 is a schematic cross-sectional view of an example of a photoelectric conversion device 1 in the present embodiment.

  The photoelectric conversion device 1 includes a first photoelectric conversion layer 101, a second photoelectric conversion layer 102, and a third photoelectric conversion layer 103. Although an example including three photoelectric conversion layers is shown here, the photoelectric conversion layer may be two or more layers. In each photoelectric conversion layer, photoelectric conversion units are arranged in a matrix. The photoelectric conversion unit of this example is at least a part of a photoelectric conversion element such as a photodiode or a photogate formed in the semiconductor layer. The photodiode, which is the photoelectric conversion element of this example, is a photoelectric transistor composed of a first conductivity type first semiconductor region in which signal charges become majority carriers and a second conductivity type second semiconductor region in which signal charges become minority carriers. Includes a conversion unit. The first semiconductor region serves as a signal charge accumulation unit (charge accumulation unit). The first photoelectric conversion layer 101 includes a first photoelectric conversion unit 1010, the second photoelectric conversion layer 102 includes a second photoelectric conversion unit 1020, and the third photoelectric conversion layer 103 includes a third photoelectric conversion unit 1030. ing.

  The material of the photoelectric conversion layer may be an inorganic material or an organic material. The inorganic material is, for example, a single crystal or polycrystalline semiconductor material, and an elemental semiconductor such as Si or Ge or a compound semiconductor such as GaAs or ZnO is used. The constituent material may be different for each photoelectric conversion layer.

  The 1st photoelectric converting layer 101, the 2nd photoelectric converting layer 102, and the 3rd photoelectric converting layer 103 are laminated | stacked via the interlayer insulation layer which each consists of an insulator. By the interlayer insulating layer, mixing of electric charges generated in each photoelectric conversion layer is reduced. The interlayer insulating layer in this example is a solid layer, but may be a liquid layer or a gas layer. The interlayer insulating film may be a single layer film including only one interlayer insulating layer or a multilayer film including a plurality of interlayer insulating layers. In this example, a first interlayer insulating film 111 is provided between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102. Between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103, a second interlayer insulating film 112 on the second photoelectric conversion layer 102 side and a third interlayer insulating film 113 on the third photoelectric conversion layer 103 side are provided. Is provided. In this example, the first interlayer insulating film 111, the second interlayer insulating film 112, and the third interlayer insulating film 113 are each a multilayer film including a plurality of interlayer insulating layers.

Light to be subjected to photoelectric conversion enters the photoelectric conversion device 1 from the opposite side of the first photoelectric conversion layer 101 to the second photoelectric conversion layer 102. As light to be subjected to photoelectric conversion, first-type light, second-type light, and third-type light having different wavelengths are incident. The wavelength of the first type light is λ ₁ , the wavelength of the second type light is λ ₂ , and the wavelength of the third type light is λ ₃ . The first type light is photoelectrically converted by the first photoelectric conversion layer 101, the second type light is photoelectrically converted by the second photoelectric conversion layer 102, and the third type light is photoelectrically converted by the third photoelectric conversion layer 103. However, the first photoelectric conversion layer 101 can also photoelectrically convert second type light and third type light other than the first type light. The same applies to the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103. The first type light, the second type light, and the third type light have different extinction coefficients in the first photoelectric conversion layer 101, the second photoelectric conversion layer 102, and the third photoelectric conversion layer 103. Most of the first type light is absorbed by the first photoelectric conversion layer 101, and most of the second type light and third type light are transmitted through the first photoelectric conversion layer 101. Most of the second type light is absorbed by the second photoelectric conversion layer 102, and most of the third type light passes through the second photoelectric conversion layer 102. When the photoelectric conversion layer is a silicon layer, in the visible light region, the shorter the wavelength, the higher the extinction coefficient. Therefore, the wavelength can be longer in the order of first type light, second type light, and third type light (λ ₁ <λ ₂ <λ ₃ ). In this example, the first type light is blue light, the second type light is green light, and the third type light is red light. The light photoelectrically converted by the photoelectric conversion device 1 is not limited to visible light, and may be ultraviolet light or infrared light.

The thickness of each photoelectric conversion layer is set according to the wavelength of light mainly photoelectrically converted in each photoelectric conversion layer. In this example, the first photoelectric conversion layer 101, the second photoelectric conversion layer 102, and the third photoelectric conversion layer 103 are silicon layers. The thickness of the silicon layer as the first photoelectric conversion layer 101 is 0.4 μm or more and 0.8 μm or less so that green light and red light can be transmitted and blue light can be efficiently absorbed. The thickness of the silicon layer as the second photoelectric conversion layer 102 is 1.2 μm or more and 2.0 μm or less so that the red light can be transmitted and the green light can be efficiently absorbed. The thickness of the silicon layer as the third photoelectric conversion layer 103 is 3.0 μm or more so that red light can be efficiently absorbed. In this example, since the third photoelectric conversion layer 103 is also used as a main support of the photoelectric conversion device 1, the thickness of the third photoelectric conversion layer 103 is 100 μm or more, for example, 700 μm or more and 800 μm or less. By adopting the silicon layer having the above thickness as the photoelectric conversion layer, light (blue light) in a wavelength band of 400 nm or more and less than 500 nm is mainly photoelectrically converted in the first photoelectric conversion layer 101. In the second photoelectric conversion layer 102, light (green light) having a wavelength band of 500 nm or more and less than 600 nm is mainly photoelectrically converted. In the third photoelectric conversion layer 103, light (red light) having a wavelength band of 600 nm or more and less than 700 nm is mainly photoelectrically converted. In this example, for convenience, the wavelength λ ₁ of the first type light is set to 450 nm, the wavelength λ ₂ of the second type light is set to 550 nm, and the wavelength λ ₃ of the third type light is set to 650 nm.

  As described above, the photoelectric conversion device 1 can perform color separation based on the spectral transmission characteristics of the photoelectric conversion layer itself. Since color separation can be performed in a direction perpendicular to the light receiving surface, the resolution can be improved. Further, since color separation can be performed without providing a color filter, light utilization efficiency is improved. However, primary color (RGB) or complementary color (CMY) color filters may be used on the photoelectric conversion layer or on the light receiving surface for the purpose of increasing color purity or selecting a specific wavelength. For example, a color filter that absorbs the first type light and transmits the second type light and the third type light can be provided between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102. Further, for example, a color filter that absorbs the first type light and the second type light and transmits the third type light can be provided between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103. .

  In the photoelectric conversion device 1, a microlens array 120 is formed on the first photoelectric conversion layer 101 opposite to the second photoelectric conversion layer 102, that is, on the light incident side. In the photoelectric conversion device 1, a plurality of photoelectric conversion units arranged over a plurality of photoelectric conversion layers correspond to one microlens. In this example, three photoelectric conversion units 1010, 1020, and 1030 correspond to each other. A translucent film 121 is provided between the microlens array 120 and the first photoelectric conversion layer 101. The translucent film 121 may have a light transmission characteristic that transmits at least two of the first type light, the second type light, and the third type light. The translucent film 121 of this example is a single layer film composed of one translucent layer, but may be a multilayer film. The translucent film 121 may have a color filter layer. The translucent film 121 of this example has a light transmission characteristic that transmits the first type light, the second type light, and the third type light.

  As shown in FIG. 1, an insulator film 130 is provided between the translucent film 121 and the first photoelectric conversion layer 101. The insulator film 130 is a single layer film or a multilayer film including an insulator layer. The insulator film 130 is in contact with the light transmitting layer of the light transmitting film 121 on one surface (upper surface) and in contact with the first photoelectric conversion layer 101 on the other surface (lower surface).

  FIG. 2A is an enlarged schematic cross-sectional view of the insulating film 130. In the example shown in FIG. 2A, the insulator film 130 is in contact with the light transmitting layer 1211 of the light transmitting film 121. The insulator film 130 has an insulator layer 1301. The refractive index of the insulator layer 1301 is different from the refractive index of the first photoelectric conversion layer 101 and the refractive index of the light transmitting layer 1211. The insulator layer 1301 in this example has a refractive index between the refractive index of the first photoelectric conversion layer 101 and the refractive index of the light-transmitting layer 1211, but the refractive index of the first photoelectric conversion layer 101 and the light-transmitting layer 1211 The refractive index may be higher than both, or lower than both. The insulator film 130 includes an intermediate layer 1302 that is an insulator layer between the insulator layer 1301 and the first photoelectric conversion layer 101. The refractive index of the intermediate layer 1302 is different from the refractive index of the insulator layer 1301. In this example, the refractive index of the intermediate layer 1302 is lower than the refractive index of the insulator layer 1301. Here, an example has been described in which the insulator layer 1301 is in contact with the light-transmitting film 121, the intermediate layer 1302 is in contact with the first photoelectric conversion layer 101, and the insulator layer 1301 and the intermediate layer 1302 are in contact with each other. However, the insulator film 130 is not limited to this structure, and an insulator layer can be further added, or a single-layer film including only the insulator layer 1301 without providing the intermediate layer 1302 may be used.

  As shown in FIG. 1, a first dielectric film 131 is provided between the first photoelectric conversion layer 101 and the first interlayer insulating film 111. The first dielectric film 131 is a single layer film or a multilayer film including a dielectric layer. The first dielectric film 131 is in contact with the first photoelectric conversion layer 101 on one surface (upper surface) and in contact with the interlayer insulating layer of the first interlayer insulating film 111 on the other surface (lower surface).

  FIG. 2B is a schematic enlarged cross-sectional view of the first dielectric film 131. In the example shown in FIG. 2B, the first dielectric film 131 is in contact with the interlayer insulating layer 1111 of the first interlayer insulating film 111. The first dielectric film 131 has a dielectric layer 1311. The refractive index of the dielectric layer 1311 is different from the refractive index of the first photoelectric conversion layer 101 and the refractive index of the interlayer insulating layer 1111, and is between the first photoelectric conversion layer 101 and the first interlayer insulating film 111. There are a plurality of light reflecting surfaces. The dielectric layer 1311 of this example has a refractive index between the refractive index of the first photoelectric conversion layer 101 and the refractive index of the interlayer insulating layer 1111, but the refractive index of the first photoelectric conversion layer 101 and the interlayer insulating layer 1111 The refractive index may be higher than both, or lower than both. The first dielectric film 131 includes an intermediate layer 1312 that is a dielectric layer between the dielectric layer 1311 and the first photoelectric conversion layer 101. The refractive index of the intermediate layer 1312 is different from the refractive index of the dielectric layer 1311. In this example, the refractive index of the intermediate layer 1312 is lower than the refractive index of the dielectric layer 1311. Here, the dielectric layer 1311 is in contact with the first interlayer insulating film 111, the intermediate layer 1312 is in contact with the first photoelectric conversion layer 101, and the dielectric layer 1311 and the intermediate layer 1312 are in contact with each other. The plurality of light reflecting surfaces described above include the interface between the dielectric layer 1311 and the interlayer insulating layer 1111, the interface between the intermediate layer 1312 and the first photoelectric conversion layer 101, and the three interfaces between the dielectric layer 1311 and the intermediate layer 1312. Including. The first dielectric film 131 is not limited to this configuration, and may include more dielectric layers, or may be a single-layer film including only the dielectric layer 1311 without providing the intermediate layer 1312.

  As shown in FIG. 1, a second dielectric film 132 is provided between the first interlayer insulating film 111 and the second photoelectric conversion layer 102. The second dielectric film 132 is a single layer film or a multilayer film including a dielectric layer. The second dielectric film 132 is in contact with the interlayer insulating layer of the first interlayer insulating film 111 on one surface (upper surface) and in contact with the second photoelectric conversion layer 102 on the other surface (lower surface).

  FIG. 2C is an enlarged schematic sectional view of the second dielectric film 132. In the example shown in FIG. 2C, the second dielectric film 132 is in contact with the interlayer insulating layer 1112 of the first interlayer insulating film 111. The second dielectric film 132 has a dielectric layer 1321. The refractive index of the dielectric layer 1321 is different from the refractive index of the second photoelectric conversion layer 102 and the refractive index of the interlayer insulating layer 1112, and between the first interlayer insulating film 111 and the second photoelectric conversion layer 102. There are a plurality of light reflecting surfaces. The dielectric layer 1321 in this example has a refractive index between the refractive index of the second photoelectric conversion layer 102 and the refractive index of the interlayer insulating layer 1112, but the refractive index of the second photoelectric conversion layer 102 and the interlayer insulating layer 1112 The refractive index may be higher than both, or lower than both. The second dielectric film 132 includes an intermediate layer 1322 that is a dielectric layer between the dielectric layer 1321 and the second photoelectric conversion layer 102. The refractive index of the intermediate layer 1322 is different from the refractive index of the dielectric layer 1321. In this example, the refractive index of the intermediate layer 1322 is lower than the refractive index of the dielectric layer 1321. Here, the dielectric layer 1321 is in contact with the first interlayer insulating film 111, the intermediate layer 1322 is in contact with the second photoelectric conversion layer 102, and the dielectric layer 1321 and the intermediate layer 1322 are in contact with each other. The plurality of light reflecting surfaces described above include the interface between the dielectric layer 1321 and the interlayer insulating layer 1112, the interface between the intermediate layer 1322 and the second photoelectric conversion layer 102, and the three interfaces between the dielectric layer 1321 and the intermediate layer 1322. Including. However, the second dielectric film 132 is not limited to this configuration, and a dielectric layer can be further added, or a single-layer film including only the dielectric layer 1311 without providing the intermediate layer 1312 may be used. .

  As shown in FIG. 1, a third dielectric film 133 is provided between the second photoelectric conversion layer 102 and the second interlayer insulating film 112. The third dielectric film 133 is a single layer film or a multilayer film including a dielectric layer. The third dielectric film 133 is in contact with the second photoelectric conversion layer 102 on one surface (upper surface) and in contact with the interlayer insulating layer of the second interlayer insulating film 112 on the other surface (lower surface).

  FIG. 2D is a schematic enlarged cross-sectional view of the third dielectric film 133. In the example shown in FIG. 2D, the third dielectric film 133 is in contact with the interlayer insulating layer 1121 of the second interlayer insulating film 112. The third dielectric film 133 has a dielectric layer 1331. The refractive index of the dielectric layer 1331 is different from the refractive index of the second photoelectric conversion layer 102 and the refractive index of the interlayer insulating layer 1112. The dielectric layer 1331 in this example has a refractive index between the refractive index of the second photoelectric conversion layer 102 and the refractive index of the interlayer insulating layer 1112, but the refractive index of the second photoelectric conversion layer 102 and the interlayer insulating layer 1112 The refractive index may be higher than both, or lower than both. The third dielectric film 133 includes an intermediate layer 1332 that is a dielectric layer between the dielectric layer 1331 and the second photoelectric conversion layer 102. The refractive index of the intermediate layer 1332 is different from the refractive index of the dielectric layer 1331. In this example, the refractive index of the intermediate layer 1332 is lower than the refractive index of the dielectric layer 1331. Here, the dielectric layer 1331 is in contact with the second interlayer insulating film 112, the intermediate layer 1332 is in contact with the second photoelectric conversion layer 102, and the dielectric layer 1331 and the intermediate layer 1332 are in contact with each other. However, the present invention is not limited to this configuration, and a dielectric layer can be further added. The third dielectric film 133 may be a single-layer film including only the dielectric layer 1321 without providing the intermediate layer 1322.

  A fourth dielectric film 134 is provided between the third interlayer insulating film 113 and the third photoelectric conversion layer 103. The fourth dielectric film 134 is a single layer film or a multilayer film including a dielectric layer. The fourth dielectric film 134 is in contact with the interlayer insulating layer of the third interlayer insulating film 113 on one surface (upper surface) and in contact with the third photoelectric conversion layer 103 on the other surface (lower surface). The fourth dielectric film 134 may have the same structure as the first dielectric film 131, the second dielectric film 132, and the third dielectric film 133.

  There is one interlayer insulating film (first interlayer insulating film 111) between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102. On the other hand, there are two interlayer insulating films (second interlayer insulating film 112 and third interlayer insulating film 113) between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103. The distance between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103 is larger than the distance between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102. The distance between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102 is, for example, 0.5 μm or more. The distance between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103 is, for example, 1.0 μm or more. The total optical film thickness of the film between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102 is preferably larger than at least one wavelength of the second type light and the third type light, and is twice or more. Larger is more preferable. The total optical film thickness of the film between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103 is preferably larger than the wavelength of the third type light, and more preferably twice or more. By sufficiently increasing the optical film thickness of the film between the photoelectric conversion layers, multiple reflection of light between the photoelectric conversion layers can be suppressed.

  In this example, a dielectric film is provided as a continuous film having a portion corresponding to each of a plurality of photoelectric conversion units arranged in each photoelectric conversion layer, but an independent pattern is provided for each of the plurality of photoelectric conversion units. A plurality of dielectric films may be provided.

  The material of the interlayer insulating layer, the dielectric layer, the insulating layer, and the light transmitting layer may be an inorganic material or an organic material. Examples thereof include silicon compounds such as silicon oxide, silicon nitride, and silicon carbide, metal oxides such as hafnium oxide and titanium oxide, and resins. Silicon oxide includes silicate glass containing impurities such as phosphorus, boron and fluorine. Silicon nitride includes silicon oxynitride containing oxygen.

  For example, the refractive index of the interlayer insulating layer, the translucent layer, and the intermediate layer is less than 1.6, the refractive index of the dielectric layer and the insulating layer is 1.6 to 2.5, and the refractive index of the photoelectric conversion layer Is 3.0 or more. In this example, the photoelectric conversion layers 101, 102, and 103 are silicon layers having a refractive index of 4.06. The light-transmitting layer 1211, the interlayer insulating layers 1111, 1112, 1121, and the intermediate layers 1302, 1312, 1322, and 1332 are silicon oxide layers each having a refractive index of 1.46. The insulator layer 1301 and the dielectric layers 1311, 1321, and 1331 are silicon nitride layers each having a refractive index of 2.03.

  In this example, the thickness of the insulator layer 1301 is 50 nm. Each of the dielectric layers 1311 and 1321 has a thickness of 60 nm. The thickness of the dielectric layer 1331 is 70 nm. The thicknesses of the intermediate layers 1302, 1312, 1322, and 1332 are each 10 nm. The silicon oxide layer as the intermediate layer is thinner than the silicon nitride layer in the same film. The fourth dielectric film 134 is also a multilayer film including a silicon nitride layer as a dielectric layer having a thickness of 70 nm and a silicon oxide layer as an intermediate layer having a thickness of 10 nm. The insulator film 130 has a physical film thickness of 60 nm, the dielectric films 131 and 132 have a physical film thickness of 70 nm, and the dielectric films 133 and 134 have a physical film thickness of 80 nm.

  The insulator film 130, the first dielectric film 131, the second dielectric film 132, the third dielectric film 133, and the fourth dielectric film 134 each function as an antireflection film. The insulator film 130 functions as a first antireflection film for the first type light, the second type light, and the third type light. The first dielectric film 131 and the second dielectric film 132 function as a second antireflection film for the second type light and the third type light. The third dielectric film 133 and the fourth dielectric film 134 function as a third antireflection film for the third type light. Hereinafter, the antireflection function of each film will be described in detail.

  An example of the spectral reflection characteristics of the edge film 130 is shown in FIG. 3A, an example of the spectral reflection characteristics of the first dielectric film 131 and the second dielectric film 132 is shown in FIG. An example of the spectral reflection characteristics of 133 and the fourth dielectric film 134 is shown in FIG. In this example, the first dielectric film 131 and the second dielectric film 132, and the third dielectric film 133 and the fourth dielectric film 134 have the same spectral reflection characteristics. The reflectance shown in each spectral reflection characteristic is obtained by subtracting from 100% the transmittance of light from the interlayer insulating film to the photoelectric conversion layer or light from the interlayer insulating film to the photoelectric conversion layer that passes through the antireflection film. It is. Light absorption in the antireflection film is not taken into consideration. For convenience, this reflectance is defined as the reflectance of the antireflection film, and its wavelength dependency is defined as spectral reflection characteristics. In this example, when the light-transmitting film or interlayer insulating film and the photoelectric conversion layer are in contact with each other without the dielectric film or the insulator film, at the interface between the light-transmitting film or interlayer insulating film and the photoelectric conversion layer. If the dispersion is not taken into consideration, the reflectance of 22.4% is 22.4% regardless of the wavelength.

  In the example of the spectral reflection characteristic of the insulator film 130 shown in FIG. 3A, the reflectance of each wavelength of the first type light, the second type light, and the third type light is less than 10%. As described above, the insulator film 130 has the transmittance of the first type light, the second type light, and the third type light from the light transmitting film 121 to the first photoelectric conversion layer 101, and the light transmitting film 121 and the first photoelectric conversion. Compared with the case where the layer 101 is in contact, the height can be increased. Therefore, the light incident on the first photoelectric conversion layer 101 increases and the sensitivity is improved.

  In the example of the spectral reflection characteristic of the first dielectric film 131 shown in FIG. 3B, the reflectance of each wavelength of the second type light and the third type light is less than 10%. As described above, the first dielectric film 131 has a transmittance of at least one of the second type light and the third type light from the first photoelectric conversion layer 101 to the first interlayer insulating film 111, and the first photoelectric conversion layer 101. This can be increased as compared with the case where the first interlayer insulating film 111 is in contact. Thereby, the reflected light of the second type light and the third type light is reduced from being photoelectrically converted by the first photoelectric conversion layer 101, and the first type light, the second type light, and the second type light in the first photoelectric conversion layer 101 are reduced. Mixing with at least one of the three types of light can be reduced. The spectral reflection characteristic of the first dielectric film 131 is preferably such that the reflectance at the wavelength of at least one of the second type light and the third type light is lower than the reflectance at the wavelength of the first type light. Thus, by reflecting 1st type light with the 1st dielectric material film 131, the sensitivity in the 1st photoelectric converting layer 101 with respect to 1st type light can be improved. In addition, it is possible to reduce incidence of the first type light on the second photoelectric conversion layer 102 and the fact that the first type light becomes stray light. The reflectivity of the first dielectric film 131 with respect to the first type light may be less than 50% as in this example.

  In the example of the spectral reflection characteristic of the second dielectric film 132 shown in FIG. 3B, the reflectance of each wavelength of the second type light and the third type light is less than 10%. As described above, the second dielectric film 132 has a transmittance of at least one of the second type light and the third type light from the first interlayer insulating film 111 to the second photoelectric conversion layer 102. It can be increased compared to the case where it does not exist. Thereby, it is reduced that the second type light and the third type light are photoelectrically converted by the first photoelectric conversion layer 101, and the mixing of the first type light and the second type light in the first photoelectric conversion layer 101 is reduced. be able to. Regarding the spectral reflection characteristics of the second dielectric film 132, it is preferable that the reflectance at the wavelength of at least one of the second type light and the third type light is lower than the reflectance at the wavelength of the first type light. Thus, by increasing the first type light reflected by the second dielectric film 132, the sensitivity of the first photoelectric conversion layer 101 with respect to the first type light can be improved. The reflectivity of the second dielectric film 132 with respect to the first type light may be less than 50% as in this example.

  In the example of the spectral reflection characteristic of the third dielectric film 133 shown in FIG. 3C, the reflectance at the wavelength of the third type light is less than 10%. As described above, the third dielectric film 133 has the transmittance of the third type light from the second photoelectric conversion layer 102 to the second interlayer insulating film 112, and the second photoelectric conversion layer 102 and the second interlayer insulating film 112 have different transmittances. Compared to the case of contact, it can be increased. Thereby, it can reduce that 3rd type light is photoelectrically converted in the 2nd photoelectric converting layer 102, and can reduce mixing of the 2nd type light and 3rd type light in the 2nd photoelectric converting layer 102. FIG. The spectral reflection characteristics of the third dielectric film 133 are preferably such that the reflectance at the wavelength of the third type light is lower than the reflectance of at least one of the first type light and the second type light. By increasing the second type light reflected by the third dielectric film 133 in this manner, the sensitivity of the second photoelectric conversion layer 102 with respect to the second type light can be improved. Moreover, incidence of the second type light on the third photoelectric conversion layer 103 and stray light of the second type light can be reduced. The reflectance of the third dielectric film 133 with respect to the second type light may be less than 50% as in this example.

  In the example of the spectral reflection characteristic of the fourth dielectric film 134 shown in FIG. 3C, the reflectance at the wavelength of the third type light is less than 10%. As described above, the fourth dielectric film 134 has the third type light transmittance from the third interlayer insulating film 113 to the third photoelectric conversion layer 103 so that the third interlayer insulating film 113 and the third photoelectric conversion layer 103 are in contact with each other. Compared to the case, it can be increased. Thereby, it is possible to reduce the third type light from being photoelectrically converted by the second photoelectric conversion layer 102, and to reduce the mixing of the first type light and the second type light in the second photoelectric conversion layer 102. Regarding the spectral reflection characteristics of the fourth dielectric film 134, it is preferable that the reflectance of the third type light is lower than the reflectance of at least one of the first type light and the second type light. By increasing the second type light reflected by the fourth dielectric film 134 in this way, the sensitivity of the second photoelectric conversion layer 102 with respect to the second type light can be improved. The reflectivity of the fourth dielectric film 134 with respect to the second type light may be less than 50% as in this example.

  In the form in which a plurality of photoelectric conversion units are arranged in one photoelectric conversion layer, inappropriate photoelectric conversion between the plurality of photoelectric conversion units of each photoelectric conversion layer is also a problem. This is remarkable for obliquely incident light. For example, the second photoelectric conversion layer in which the obliquely incident oblique light of the second type light transmitted through the first photoelectric conversion unit of the first photoelectric conversion layer 101 has a correspondence relationship with the first photoelectric conversion unit of the first photoelectric conversion layer 101. It is assumed that the first photoelectric conversion unit 102 performs photoelectric conversion. At this time, when reflection occurs in the second photoelectric conversion layer 102, the reflected light of the second type light is different from the first photoelectric conversion unit of the first photoelectric conversion layer 101 and the first photoelectric conversion layer 101 has a first reflection. In some cases, photoelectric conversion is performed by the two photoelectric conversion units. According to the present embodiment, such inappropriate photoelectric conversion can be suppressed.

  In the plane of the photoelectric conversion device 1, the interval between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102 is not necessarily constant, and there may be some variation. This variation may cause unevenness due to multiple reflections of the second type light and the third type light. However, by providing both the first dielectric film 131 and the second dielectric film 132, unevenness due to multiple reflection of light between the first photoelectric conversion layer 101 and the second photoelectric conversion layer 102 can be suppressed. Similarly, by providing both the third dielectric film 133 and the fourth dielectric film 134, unevenness due to multiple reflections of the third type light between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103 is eliminated. Can be suppressed.

  The spectral reflection characteristics of the first dielectric film 131 and the second dielectric film 132 may be different. For example, the spectral reflection characteristics of the first dielectric film 131 can make the reflectance at the wavelength of the first type light higher than the reflectance at the wavelength of the first type light in the second dielectric film 132. As a result, it is possible to reduce the incidence of the first type light transmitted through the first dielectric film 131 as stray light in the first interlayer insulating film 111 and entering the photoelectric conversion units corresponding to other microlenses.

  The spectral reflection characteristics of the third dielectric film 133 and the fourth dielectric film 134 may be different. For example, in the spectral reflection characteristic of the third dielectric film 133, the reflectance at the wavelength of the second type light may be higher than the reflectance at the wavelength of the second type light in the spectral reflection characteristic of the fourth dielectric film 134. it can. As a result, the second type light transmitted through the third dielectric film 133 becomes stray light in the second interlayer insulating film 112 or the third interlayer insulating film 113 and enters the photoelectric conversion unit corresponding to another microlens. Can be reduced.

  A more appropriate anti-reflection function can be realized by appropriately setting the refractive index and thickness of the layer (insulator layer or dielectric layer) constituting the anti-reflection film in accordance with the wavelength of light for which the reflectance is to be lowered. It is. For example, the layer of the antireflection film is arranged so that the difference in refractive index between the incident side medium and the reflection side medium at the interface that can be a light reflecting surface in the antireflection film becomes small. In particular, a dielectric layer or an insulating layer having a refractive index between the refractive index of the interlayer insulating layer or the translucent layer and the refractive index of the photoelectric conversion layer constituting the antireflection film is the incident side medium and the reflection side medium. This is useful for reducing the difference in refractive index between the two.

Further, the reflected light can be weakened by arranging the multiple light reflecting surfaces so as to weaken the reflected light based on the interference condition of the reflected light from the multiple light reflecting surfaces. The reflected light here refers to reflected light at the interface in the antireflection film, reflected light at the interface between the antireflection film and the interlayer insulating film, and reflected light at the interface between the antireflection film and the photoelectric conversion layer. Based on the interference condition of the reflected light, the reflected light generated on the light reflecting surface between the photoelectric conversion layer and the translucent film can be reduced. In particular, the optical film thickness of the antireflection film is important. The optical film thickness T of the film having the number of layers is m, where the refractive index of the _kth layer is n _k and the thickness is d _k.

  It is represented by In addition, in the relationship between the optical film thickness and the wavelength of each antireflection film, it is desirable to consider dispersion of the antireflection film (wavelength dependence of refractive index) when calculating the optical film thickness.

Optical film thickness _{T 0} of the insulating film 130 is preferably less than λ _1/2, and more preferably lambda _1/8 or 3 [lambda] _1/8 or less. Preferably the optical film thickness _{T 0} is less than lambda _2/2, lambda and more preferably _2/8 or more 3 [lambda] _2/8 or less. Preferably the optical film thickness _{T 0} is less than lambda _3/2, lambda and more preferably _3/8 or more 3 [lambda] _3/8 or less.

Preferably the optical thickness _{T 1} of the first dielectric film 131 is an optical film thickness _{T 2} of the second dielectric layer 132 is less than _{λ 2/2, λ 2/} 8 or more 3 [lambda] _2/8 that less is Is more preferable. Preferably the optical thickness _T 1, _{T 2} is less than λ _3/2, and more preferably lambda _3/8 or more 3 [lambda] _3/8 or less. Optical film thickness T ₁ and the optical thickness T ₂ are may be the same, in order to reduce stray light as described above, it is preferably different.

_{Incidentally, 5λ 1/8 ≦ T 0} ≦ 7λ 1 / 8,5λ 2/8 ≦ T 1 ≦ 7λ 2 / 8,5λ 3/8 ≦ T 2 ≦ 7λ 3 / 8,5λ 3/8 ≦ T 3 ≦ 7λ _{3 / 8,5λ 3/8 ≦ T} 4 to ≦ 7Ramuda meets either _3/8 is also preferable.

Third, it is preferably an optical thickness _{T 3} of the dielectric film 133 is an optical thickness _{T 4} of the fourth dielectric layer 134 is smaller than _{λ 3/2, λ 3/} 8 or more 3 [lambda] _3/8 that less is Is more preferable. Optical thickness T ₃ optical thickness T ₄ is may be the same, in order to reduce stray light as described above, it is preferably different.

  Thus, the optical film thickness of each dielectric film can be less than half of the wavelength of the light to be antireflection. The thickness of the silicon nitride layer used as the dielectric layer of each dielectric film can be less than a value obtained by dividing half of the wavelength to be antireflection by the refractive index (2.03) of the silicon nitride layer. . Specifically, the insulating layer 1301 is less than 111 nm, the dielectric layers 1311 and 1321 are less than 138 nm, and the dielectric layer 1311 is less than 160 nm.

The optical film thickness T ₀ of the insulator film 130 of this example is 116 nm, the optical film thicknesses T ₁ and T ₂ of the dielectric films 131 and 132 are 136 nm, and the optical film thicknesses T ₃ and T ₄ of the dielectric films 133 and 134 are 157 nm. if _{λ 1 = 450nm, λ 1/} 8 = 56nm, 3λ 1/8 = 169nm, a λ _1/2 = 225nm. lambda ₂ = 550 nm and them if _{λ 2/8 = 69nm, 3λ} 2/8 = 206nm, a λ _2/2 = 275nm. if _{λ 3 = 650nm, λ 3/} 8 = 81nm, 3λ 3/8 = 244nm, a λ _3/2 = 325nm. Standing _{teeth, λ 1/8 ≦ T 0} ≦ 3λ 1/8, λ 2/8 ≦ T 1 ≦ 3λ 2/8, λ 3/8 ≦ T 2 ≦ 3λ 3/8, λ 3/8 ≦ T 3 _{≦ 3λ 3/8, λ 3} /8 ≦ T 4 ≦ 3λ 3/8 is satisfied, respectively. An appropriate photoelectric conversion layer can be obtained by adopting a structure having a relationship of refractive index and thickness of each layer described or illustrated so far and a spectral reflection characteristic as shown in FIGS. 3 (a) to 3 (c). Can photoelectrically convert light of an appropriate wavelength.

  Here, an example in which an antireflection function is obtained using light interference is shown, but the present invention is not limited to this. For example, it is also possible to prevent reflection by using a structure (moss eye structure) in which the refractive index continuously changes using a dielectric layer with fine irregularities formed at a period smaller than the wavelength of light at the interface of the medium. Function can be obtained. An antireflection function can also be obtained by using a structure in which a large number of dielectric layers are laminated so that their refractive index gradually decreases and a refractive index changes substantially continuously.

  Hereinafter, another configuration of the photoelectric conversion device 1 will be described. A first wiring 141 is provided inside the first interlayer insulating film 111. The first wiring 141 is a multilayer wiring composed of a plurality of wiring layers (three layers in this example). Each interlayer insulating layer of the first interlayer insulating film 111 performs insulation between wiring layers in addition to insulation between photoelectric conversion layers. The interlayer insulating layer 1111 of the first interlayer insulating film 111 shown in FIG. 2B is located between the plurality of wiring layers constituting the first wiring 141 and the first dielectric film 131. The interlayer insulating layer 1112 of the first interlayer insulating film 111 shown in FIG. 2C is located between the plurality of wiring layers constituting the first wiring 141 and the second dielectric film 132. A plurality of interlayer insulating layers are also provided between the interlayer insulating layer 1111 and the interlayer insulating layer 1112, and these are positioned between the plurality of wiring layers. The first wiring 141 is connected to a semiconductor element such as a transistor having a semiconductor region such as a source / drain region and a channel region in the first photoelectric conversion layer 101 which is a semiconductor layer. The semiconductor element may be a charge coupled device (CCD). FIG. 1 shows a gate electrode 151 of a transistor. The gate electrode 151 is located between the first photoelectric conversion layer 101 and the first interlayer insulating film. The gate electrode 151 may be covered with at least a part of the dielectric layer of the first dielectric film 131. That is, the gate electrode 151 may be located between at least a part of the dielectric layers of the first dielectric film 131 and the first photoelectric conversion layer 101. Further, at least a part of the dielectric layer of the first dielectric film 131 may be located between the gate electrode 151 and the first photoelectric conversion layer 101. That is, the gate insulating layer of the transistor may be at least part of the first dielectric film 131.

  A second wiring 142 is provided inside the second interlayer insulating film 112. The second wiring 142 can also be a multilayer wiring. The second wiring 142 is connected to a semiconductor element having a semiconductor region in the second photoelectric conversion layer 102. FIG. 1 shows a gate electrode 152 of a transistor as a semiconductor element. The gate electrode 152 is located between the second photoelectric conversion layer 102 and the second interlayer insulating film 112. That is, the gate electrode 152 is located on the third photoelectric conversion layer 103 side (the opposite side to the first photoelectric conversion layer 101 side) of the second photoelectric conversion layer 102. The positional relationship between the gate electrode 152 and the third dielectric film 133 is the same as that of the gate electrode 151.

  A third wiring 143 is provided inside the third interlayer insulating film 113. The third wiring 143 can also be a multilayer wiring. The third wiring 143 is connected to a semiconductor element having a semiconductor region in the third photoelectric conversion layer 103. FIG. 1 shows a gate electrode 153 of a transistor as a semiconductor element. The gate electrode 153 is located between the third photoelectric conversion layer 103 and the third interlayer insulating film 113. That is, the gate electrode 153 is located on the second photoelectric conversion layer 102 side of the third photoelectric conversion layer 103. The positional relationship between the gate electrode 153 and the fourth dielectric film 134 is the same as that of the gate electrode 151. Thus, the gate electrode 151 and the gate electrode 152 are arranged on the opposite side of the light incident side of the corresponding photoelectric conversion layer. Thereby, for example, the second type light transmitted through the first photoelectric conversion layer 101 is scattered by the gate electrode 152 of the second photoelectric conversion layer 102 and enters the plurality of photoelectric conversion units of the first photoelectric conversion layer 101. Thus, photoelectric conversion can be reduced. In this example, the gate electrode 152 and the gate electrode 153 are located between the second photoelectric conversion layer 102 and the third photoelectric conversion layer 103. However, similarly to the gate electrodes 151 and 152, the gate electrode 153 can be disposed on the opposite side of the third photoelectric conversion layer 103 from the second photoelectric conversion layer 102 side.

  The transistors having the gate electrodes 151, 152, and 153 can be transfer transistors that transfer signal charges of corresponding photoelectric conversion units, or amplification transistors that generate electric signals from the signal charges. In addition, it may be a reset transistor that resets the signal charge or a selection transistor that controls the output of the amplification transistor. Peripheral circuits including, for example, a shift register, a decoder, an AD converter, and the like are included around the area where the photoelectric conversion units are arranged. A peripheral circuit can be provided for each photoelectric conversion layer.

  As the main component of the material of the wiring layer, aluminum, copper, gold, tungsten, titanium, tantalum, titanium nitride, tantalum nitride, or the like can be used. If necessary, polysilicon or metal can be used as the electrode material. A transparent electrode can also be used.

  The photoelectric conversion device of this embodiment is used for various applications. Most typically, it is an imaging device (image sensor). In the imaging apparatus, a plurality of photoelectric conversion units provided in separate photoelectric conversion layers corresponding to each microlens constitute one pixel. A color image can be obtained by adding together the signals for each color obtained in the photoelectric conversion portions of the respective photoelectric conversion layers. For each photoelectric conversion layer, a signal generation circuit for generating an electric signal that is a voltage or current corresponding to the amount of signal charge generated by photoelectric conversion in the photoelectric conversion unit can be provided. In addition, a signal processing circuit that processes the electrical signal may be provided for each photoelectric conversion layer. The light photoelectrically converted by the first photoelectric conversion layer 101 is treated as a signal corresponding to the first type light. Therefore, if the second type light or the third type light photoelectrically converted by the first photoelectric conversion layer 101 exists, it appears as a mixed color in the signal of the first type light. By providing the antireflection film as described above, it is possible to suppress the phenomenon in which the reflected light of the second type light that should be originally photoelectrically converted by the second photoelectric conversion layer 102 is photoelectrically converted by the first photoelectric conversion layer 101. Therefore, color mixing is reduced.

  Other than the imaging device, it can also be used as a photometric device (AE sensor) or a focus detection device (AF sensor). A form in which a photoelectric conversion layer having a plurality of photoelectric conversion layers has an imaging function and another photoelectric conversion layer has a focus detection function and a photometric function can also be employed. The photoelectric conversion device can also be used as a power generation device such as a solar battery. In a solar cell, improvement in power generation efficiency is expected by photoelectrically converting light of a certain wavelength with a photoelectric conversion layer having higher quantum efficiency.

  Although the configuration of the photoelectric conversion device has been described above, a configuration in which at least a part of the above configuration is omitted or a configuration in which another configuration is added can be employed. For example, the insulator film 130 that is the first antireflection film may not be provided. For example, at least one of the first dielectric film 131 and the second dielectric film 132 that are the second antireflection film may not be provided. Further, at least one of the third dielectric film 133 and the fourth dielectric film 134 which are third antireflection films may not be provided.

Reference Signs List 101 first photoelectric conversion layer 102 second photoelectric conversion layer 103 third photoelectric conversion layer 111 first interlayer insulating film 112 second interlayer insulating film 113 third interlayer insulating film 130 insulator film 131 first dielectric film 132 second dielectric Body film 133 Third dielectric film 134 Fourth dielectric film 1311 Dielectric layer 1321 Dielectric layer 1331 Dielectric layer

Claims (15)

Insulation in which a first photoelectric conversion layer having a plurality of photoelectric conversion units and a second photoelectric conversion layer having a plurality of photoelectric conversion units are arranged between the first photoelectric conversion layer and the second photoelectric conversion layer. A photoelectric conversion device stacked through layers,
Between the second photoelectric conversion layer and the insulating layer, a dielectric film in contact with both the second photoelectric conversion layer and the insulating layer is provided,
The photoelectric conversion device, wherein the dielectric film includes a dielectric layer having a refractive index between a refractive index of the second photoelectric conversion layer and a refractive index of the insulating layer. Insulation in which a first photoelectric conversion layer having a plurality of photoelectric conversion units and a second photoelectric conversion layer having a plurality of photoelectric conversion units are arranged between the first photoelectric conversion layer and the second photoelectric conversion layer. A photoelectric conversion device stacked through layers,
Between the first photoelectric conversion layer and the insulating layer, a dielectric film in contact with both the first photoelectric conversion layer and the insulating layer is provided,
The dielectric film includes a dielectric layer having a refractive index between a refractive index of the first photoelectric conversion layer and a refractive index of the insulating layer.   Second type light having a wavelength different from that of the first type light photoelectrically converted by the first photoelectric conversion layer passes through the first photoelectric conversion layer and is photoelectrically converted by the second photoelectric conversion layer, and the dielectric The photoelectric conversion device according to claim 1 or 2, wherein the optical film thickness of the film is less than half of the wavelength of the second type light.   Second type light having a wavelength different from that of the first type light photoelectrically converted by the first photoelectric conversion layer passes through the first photoelectric conversion layer and is photoelectrically converted by the second photoelectric conversion layer, and the dielectric The photoelectric conversion device according to claim 3, wherein the film has a spectral reflection characteristic in which the reflectance at the wavelength of the second type light is lower than the reflectance at the wavelength of the first type light. The plurality of wiring layers are provided between the first photoelectric conversion layer and the dielectric film, and the insulating layer is located between the plurality of wiring layers and the dielectric film. The described photoelectric conversion device, or
3. A plurality of wiring layers are provided between the second photoelectric conversion layer and the dielectric film, and the insulating layer is located between the plurality of wiring layers and the dielectric film. The photoelectric conversion device described in 1. The dielectric film includes an intermediate layer located between the second photoelectric conversion layer and the dielectric layer in contact with the second photoelectric conversion layer, and the intermediate layer has a refractive index of the dielectric layer. The photoelectric conversion device according to claim 1, which has a different refractive index and is thinner than the dielectric layer, or
The dielectric film includes an intermediate layer located in contact with the first photoelectric conversion layer and positioned between the first photoelectric conversion layer and the dielectric layer, and the intermediate layer has a refractive index of the dielectric layer. The photoelectric conversion device according to claim 2, comprising an intermediate layer having a different refractive index and thinner than the dielectric layer. A light-transmitting layer is provided on the opposite side of the first photoelectric conversion layer from the second photoelectric conversion layer, and the first photoelectric conversion layer and the light-transmitting layer are disposed between the first photoelectric conversion layer and the first photoelectric conversion layer. An insulator film is provided in contact with both the photoelectric conversion layer and the light-transmitting layer,
The insulator film includes an insulator layer having a refractive index between the refractive index of the first photoelectric conversion layer and the refractive index of the translucent layer, and the optical film thickness of the insulator film is that of the dielectric film. The photoelectric conversion device according to claim 1, which is different from the optical film thickness.   The second type light having a wavelength different from that of the first type light photoelectrically converted by the first photoelectric conversion layer passes through the first photoelectric conversion layer and is photoelectrically converted by the second photoelectric conversion layer, and the insulator. The photoelectric conversion device according to claim 7, wherein the optical film thickness of the film is less than half of the wavelength of the first type light and less than half of the wavelength of the second type light.   The photoelectric conversion device according to claim 8, wherein a wavelength of the second type light is longer than a wavelength of the first type light, and an optical film thickness of the dielectric film is larger than an optical film thickness of the insulator film.   Second type light having a wavelength different from that of the first type light photoelectrically converted by the first photoelectric conversion layer passes through the first photoelectric conversion layer and is photoelectrically converted by the second photoelectric conversion layer, and the dielectric 10. The film according to claim 7, wherein the film has a spectral reflection characteristic in which the reflectance at the wavelength of the first type light is higher than the reflectance of the first type light of the insulator film. Photoelectric conversion device.   The first photoelectric conversion layer and the second photoelectric conversion layer are silicon layers, the insulating layer is a silicon oxide layer, and the dielectric layer is a silicon nitride layer. The photoelectric conversion device described in 1. Insulation in which a first photoelectric conversion layer having a plurality of photoelectric conversion units and a second photoelectric conversion layer having a plurality of photoelectric conversion units are arranged between the first photoelectric conversion layer and the second photoelectric conversion layer. A photoelectric conversion device laminated through a film,
An antireflection film for light transmitted through the first photoelectric conversion layer is provided between the first photoelectric conversion layer and the insulating film and between the second photoelectric conversion layer and the insulating film. A photoelectric conversion device characterized by comprising:   The first photoelectric conversion layer is a semiconductor layer, and an electrode of a semiconductor element having a semiconductor region in the first photoelectric conversion layer is positioned on the second photoelectric conversion layer side of the first photoelectric conversion layer. The photoelectric conversion device according to any one of claims 1 to 12.   A third photoelectric conversion layer is provided on the opposite side of the second photoelectric conversion layer from the first photoelectric conversion layer, and the distance between the second photoelectric conversion layer and the third photoelectric conversion layer is The photoelectric conversion device according to claim 1, wherein the photoelectric conversion device is larger than a distance between the first photoelectric conversion layer and the second photoelectric conversion layer.   A third photoelectric conversion layer is provided on the opposite side of the second photoelectric conversion layer from the first photoelectric conversion layer, and the second photoelectric conversion layer and the third photoelectric conversion layer are semiconductor layers. The electrode of the semiconductor element having a semiconductor region in the second photoelectric conversion layer is located on the third photoelectric conversion layer side of the second photoelectric conversion layer, and the semiconductor element having the semiconductor region in the third photoelectric conversion layer The photoelectric conversion device according to claim 1, wherein an electrode is located on the second photoelectric conversion layer side of the third photoelectric conversion layer.

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