JP2014120509A - Heat treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a heat treatment device capable of uniformizing in-plane temperature distribution of a substrate.SOLUTION: An opaque louver 21 having a cylindrical shape is provided between a halogen heating part 4 having a halogen lamp HL, and a semiconductor wafer W in a chamber. In the case that light irradiation is performed from the halogen lamp HL without providing the louver 21, a temperature at a peripheral edge part is tend to be lower than that in an inside region of the semiconductor wafer W. By providing the opaque louver 21 having a cylindrical shape to shield light from the halogen lamp HL provided outside the louver 21 toward the inside region of the semiconductor wafer W, light toward the inside region is reduced, and heating of the inside region is weakened. Thereby, the peripheral edge part of the semiconductor wafer W is heated relatively strongly, and thus, in-plane temperature distribution of the semiconductor wafer W can be uniformized.

Description

  The present invention relates to a heat treatment apparatus for heating a thin plate-shaped precision electronic substrate (hereinafter simply referred to as “substrate”) such as a disk-shaped semiconductor wafer by irradiating light.

  In the semiconductor device manufacturing process, impurity introduction is an indispensable step for forming a pn junction in a semiconductor wafer. Currently, impurities are generally introduced by ion implantation and subsequent annealing. The ion implantation method is a technique in which impurity elements such as boron (B), arsenic (As), and phosphorus (P) are ionized and collided with a semiconductor wafer at a high acceleration voltage to physically perform impurity implantation. The implanted impurities are activated by annealing. At this time, if the annealing time is about several seconds or more, the implanted impurities are deeply diffused by heat, and as a result, the junction depth becomes deeper than required, and there is a possibility that good device formation may be hindered.

  Therefore, in recent years, flash lamp annealing (FLA) has attracted attention as an annealing technique for heating a semiconductor wafer in an extremely short time. Flash lamp annealing is a semiconductor wafer in which impurities are implanted by irradiating the surface of the semiconductor wafer with flash light using a xenon flash lamp (hereinafter, simply referred to as “flash lamp” means xenon flash lamp). Is a heat treatment technique for raising the temperature of only the surface of the material in a very short time (several milliseconds or less).

  The radiation spectral distribution of a xenon flash lamp ranges from the ultraviolet region to the near infrared region, has a shorter wavelength than the conventional halogen lamp, and almost coincides with the fundamental absorption band of a silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, the semiconductor wafer can be rapidly heated with little transmitted light. Further, it has been found that if the flash light irradiation is performed for a very short time of several milliseconds or less, only the vicinity of the surface of the semiconductor wafer can be selectively heated. For this reason, if the temperature is raised for a very short time by the xenon flash lamp, only the impurity activation can be performed without deeply diffusing the impurities.

  As a heat treatment apparatus using such a xenon flash lamp, in Patent Documents 1 and 2, a pulse emitting lamp such as a flash lamp is arranged on the front side of a semiconductor wafer, and a continuous lighting lamp such as a halogen lamp is arranged on the back side. And what performs desired heat processing by those combination is disclosed. In the heat treatment apparatuses disclosed in Patent Documents 1 and 2, the semiconductor wafer is preheated to a certain temperature with a halogen lamp or the like, and then heated to a desired processing temperature by pulse heating from a flash lamp. Patent Document 3 discloses an apparatus for placing a semiconductor wafer on a hot plate, preheating it to a predetermined temperature, and then raising the temperature to a desired processing temperature by flash light irradiation from a flash lamp. .

JP-A-60-258928 JP 2005-527972 A JP 2007-5532 A

  When preheating a semiconductor wafer with a hot plate as disclosed in Patent Document 3, the in-plane distribution of the wafer temperature can be made relatively uniform by accurately adjusting the plate temperature. In particular, the hot plate of Patent Document 3 is concentrically divided into a plurality of zones, and the temperature can be adjusted for each zone, so that the in-plane distribution of the wafer temperature can be easily made uniform. On the other hand, when preheating is performed with a halogen lamp as disclosed in Patent Documents 1 and 2, the process merit that the semiconductor wafer can be heated to a relatively high preheating temperature in a short time. However, the temperature at the peripheral edge of the wafer tends to be lower than that at the center.

  In order to eliminate the temperature drop at the peripheral edge in the preliminary heating stage with such a halogen lamp, increasing the amount of light irradiated from the halogen lamp to the wafer peripheral edge increases the temperature of a part of the peripheral edge. The uniformity of temperature distribution in the inner region than the peripheral edge will be impaired. Moreover, the temperature drop at the outermost edge of the semiconductor wafer remains without being fully eliminated.

  The present invention has been made in view of the above problems, and an object thereof is to provide a heat treatment apparatus capable of making the in-plane temperature distribution of a substrate uniform.

  In order to solve the above-mentioned problems, a first aspect of the present invention is a heat treatment apparatus for heating a substrate by irradiating a disk-shaped substrate with a chamber for accommodating the substrate, and a substrate in the chamber. A light irradiating unit in which a plurality of rod-shaped lamps are arranged in a region facing the main surface wider than the main surface of the substrate held by the holding unit, the light irradiating unit, and the holding unit. A central axis passing through the center of the substrate, and a cylindrical light shielding member opaque to the light emitted from the light irradiation unit, and the light irradiation unit includes the A plurality of bar lamps are arranged in each of the first stage and the second stage in order from the holding unit, a plurality of bar lamps arranged in the first stage, and a plurality of bar lamps arranged in the second stage, Are provided so as to be orthogonal to each other, and And forming a circular end longitudinally notches across an area along a plurality of rod-shaped lamps arranged in the second stage of the portion of the member.

  The invention of claim 2 is the heat treatment apparatus according to claim 1 of the invention, wherein the portion of the end portion perpendicular to the longitudinal direction of the plurality of rod-shaped lamps arranged in the second stage is deepest, and The notch portion is formed so that the portions orthogonal to the longitudinal direction of the plurality of rod-shaped lamps arranged in the first stage are shallowest.

  According to a third aspect of the present invention, in the heat treatment apparatus according to the first or second aspect of the present invention, a notch portion is formed at an end portion of the light shielding member that is closer to the holding portion.

  According to a fourth aspect of the present invention, in the heat treatment apparatus according to the first or second aspect of the present invention, a notch portion is formed at an end portion of the light shielding member on a side close to the light irradiation portion. .

  According to a fifth aspect of the present invention, in the heat treatment apparatus according to any one of the first to fourth aspects, the light shielding member is made of opaque quartz.

  The invention of claim 6 is the heat treatment apparatus according to any one of claims 1 to 5, wherein the plurality of bar lamps arranged in the light irradiation unit are halogen lamps, And a flash lamp for irradiating flash light onto the substrate preheated by the light irradiation.

  According to the first to sixth aspects of the present invention, the central axis is provided between the light irradiation unit and the holding unit so as to pass through the center of the substrate, and is opaque to the light emitted from the light irradiation unit. Since the cylindrical light shielding member is provided, a part of the light traveling from the light irradiation part toward the inner region of the substrate can be shielded to make the in-plane temperature distribution of the substrate uniform. Moreover, in order to form a notch part in the both ends area | region along the longitudinal direction of the some rod-shaped lamp | ramp arrange | positioned in the 2nd step | paragraph distant from a holding | maintenance part among the circular edge parts of a light-shielding member, The in-plane temperature distribution of the substrate can be made uniform by eliminating the non-uniformity of the illuminance distribution caused by the difference between the distance to the rod lamp and the distance to the second stage rod lamp.

  In particular, according to the second aspect of the present invention, the portion perpendicular to the longitudinal direction of the plurality of rod-shaped lamps arranged at the second stage among the end portions of the light shielding member is the deepest and the plurality arranged at the first stage. Since the notch is formed so that the portion orthogonal to the longitudinal direction of the rod-shaped lamp becomes the shallowest, the illuminance distribution in the circumferential direction of the substrate can be made more uniform.

  According to the invention of claim 6, the in-plane temperature distribution of the substrate at the time of preheating by the halogen lamp can be made uniform, and as a result, the in-plane temperature distribution of the substrate at the time of flash light irradiation can be made uniform. Can do.

It is a longitudinal cross-sectional view which shows the structure of the heat processing apparatus which concerns on this invention. It is a perspective view which shows the whole external appearance of a holding | maintenance part. It is the top view which looked at the holding | maintenance part from the upper surface. It is the side view which looked at the holding | maintenance part from the side. It is a top view of a transfer mechanism. It is a side view of a transfer mechanism. It is a top view which shows arrangement | positioning of a some halogen lamp. It is a perspective view showing the whole louver outline of a 1st embodiment. It is a figure which shows typically the light shielding by the louver of 1st Embodiment. It is a perspective view which shows the whole louver of 2nd Embodiment. It is a figure which shows the state in which the louver of 2nd Embodiment was installed. It is a figure which shows typically the light shielding by the louver of 2nd Embodiment. It is a figure which shows typically the light shielding by the louver of 2nd Embodiment. It is a figure which shows the other example of the state by which the louver of 2nd Embodiment was installed. It is a figure which shows the other example of the shape of a notch part. It is a figure which shows the other example of the shape of a notch part.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First Embodiment>
FIG. 1 is a longitudinal sectional view showing a configuration of a heat treatment apparatus 1 according to the present invention. The heat treatment apparatus 1 of this embodiment is a flash lamp annealing apparatus that heats a semiconductor wafer W by irradiating flash light onto a disk-shaped semiconductor wafer W having a diameter of 300 mm as a substrate. Impurities are implanted into the semiconductor wafer W before being carried into the heat treatment apparatus 1, and an activation process of the impurities implanted by the heat treatment by the heat treatment apparatus 1 is executed. In addition, in FIG. 1 and each figure after that, in order to clarify those directional relationships, an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane is appropriately attached. Further, in FIG. 1 and the subsequent drawings, the dimensions and numbers of the respective parts are exaggerated or simplified as necessary for easy understanding.

  The heat treatment apparatus 1 includes a chamber 6 that accommodates a semiconductor wafer W, a flash heating unit 5 that houses a plurality of flash lamps FL, and a halogen heating unit 4 that houses a plurality of halogen lamps HL. A flash heating unit 5 is provided on the upper side of the chamber 6, and a halogen heating unit 4 is provided on the lower side. A louver 21 is provided between the halogen heating unit 4 and the chamber 6. The heat treatment apparatus 1 includes a holding unit 7 that holds the semiconductor wafer W in a horizontal posture inside the chamber 6, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the outside of the apparatus, Is provided. Furthermore, the heat treatment apparatus 1 includes a control unit 3 that controls the operation mechanisms provided in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 to perform the heat treatment of the semiconductor wafer W.

  The chamber 6 is configured by mounting quartz chamber windows above and below a cylindrical chamber side portion 61. The chamber side portion 61 has a substantially cylindrical shape with upper and lower openings. The upper opening is closed by an upper chamber window 63 and the lower opening is closed by a lower chamber window 64. ing. The upper chamber window 63 constituting the ceiling of the chamber 6 is a disk-shaped member made of quartz and functions as a quartz window that transmits the flash light emitted from the flash heating unit 5 into the chamber 6. The lower chamber window 64 constituting the floor portion of the chamber 6 is also a disk-shaped member made of quartz and functions as a quartz window that transmits light from the halogen heating unit 4 into the chamber 6.

  A reflection ring 68 is attached to the upper part of the inner wall surface of the chamber side part 61, and a reflection ring 69 is attached to the lower part. The reflection rings 68 and 69 are both formed in an annular shape. The upper reflecting ring 68 is attached by fitting from above the chamber side portion 61. On the other hand, the lower reflection ring 69 is mounted by being fitted from the lower side of the chamber side portion 61 and fastened with a screw (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side portion 61. An inner space of the chamber 6, that is, a space surrounded by the upper chamber window 63, the lower chamber window 64, the chamber side portion 61, and the reflection rings 68 and 69 is defined as a heat treatment space 65.

  By attaching the reflection rings 68 and 69 to the chamber side portion 61, a recess 62 is formed on the inner wall surface of the chamber 6. That is, a recess 62 surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not mounted, a lower end surface of the reflection ring 68, and an upper end surface of the reflection ring 69 is formed. . The recess 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the chamber 6, and surrounds the holding portion 7 that holds the semiconductor wafer W.

  The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (for example, stainless steel) having excellent strength and heat resistance. Further, the inner peripheral surfaces of the reflection rings 68 and 69 are mirrored by electrolytic nickel plating.

  The chamber side 61 is formed with a transfer opening (furnace port) 66 for carrying the semiconductor wafer W into and out of the chamber 6. The transfer opening 66 can be opened and closed by a gate valve 185. The transport opening 66 is connected to the outer peripheral surface of the recess 62. Therefore, when the gate valve 185 opens the transfer opening 66, the semiconductor wafer W is carried into the heat treatment space 65 through the recess 62 from the transfer opening 66 and the semiconductor wafer W is carried out from the heat treatment space 65. It can be performed. Further, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the chamber 6 becomes a sealed space.

Further, a gas supply hole 81 for supplying a processing gas (nitrogen gas (N ₂ ) in the present embodiment) to the heat treatment space 65 is formed in the upper portion of the inner wall of the chamber 6. The gas supply hole 81 is formed at a position above the recess 62 and may be provided in the reflection ring 68. The gas supply hole 81 is connected to a gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the chamber 6. The gas supply pipe 83 is connected to a nitrogen gas supply source 85. A valve 84 is inserted in the middle of the path of the gas supply pipe 83. When the valve 84 is opened, nitrogen gas is supplied from the nitrogen gas supply source 85 to the buffer space 82. The nitrogen gas flowing into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65.

  On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower portion of the inner wall of the chamber 6. The gas exhaust hole 86 is formed at a position lower than the recess 62 and may be provided in the reflection ring 69. The gas exhaust hole 86 is connected to a gas exhaust pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the chamber 6. The gas exhaust pipe 88 is connected to the exhaust unit 190. A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88. When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 through the buffer space 87. A plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the chamber 6 or may be slit-shaped. Further, the nitrogen gas supply source 85 and the exhaust unit 190 may be a mechanism provided in the heat treatment apparatus 1 or may be a utility of a factory where the heat treatment apparatus 1 is installed.

  A gas exhaust pipe 191 that exhausts the gas in the heat treatment space 65 is also connected to the tip of the transfer opening 66. The gas exhaust pipe 191 is connected to the exhaust unit 190 via a valve 192. By opening the valve 192, the gas in the chamber 6 is exhausted through the transfer opening 66.

  FIG. 2 is a perspective view showing the overall appearance of the holding unit 7. FIG. 3 is a plan view of the holding unit 7 as viewed from above, and FIG. 4 is a side view of the holding unit 7 as viewed from the side. The holding part 7 includes a base ring 71, a connecting part 72, and a susceptor 74. The base ring 71, the connecting portion 72, and the susceptor 74 are all made of quartz. That is, the whole holding part 7 is made of quartz.

  The base ring 71 is an annular quartz member. The base ring 71 is supported on the wall surface of the chamber 6 by being placed on the bottom surface of the recess 62 (see FIG. 1). On the upper surface of the base ring 71 having an annular shape, a plurality of connecting portions 72 (four in this embodiment) are erected along the circumferential direction. The connecting portion 72 is also a quartz member, and is fixed to the base ring 71 by welding. The shape of the base ring 71 may be an arc shape in which a part is omitted from the annular shape.

  The flat susceptor 74 is supported by four connecting portions 72 provided on the base ring 71. The susceptor 74 is a substantially circular flat plate member made of quartz. The diameter of the susceptor 74 is larger than the diameter of the semiconductor wafer W. That is, the susceptor 74 has a larger planar size than the semiconductor wafer W. On the upper surface of the susceptor 74, a plurality (five in this embodiment) of guide pins 76 are erected. The five guide pins 76 are provided along a circumference that is concentric with the outer circumference of the susceptor 74. The diameter of the circle in which the five guide pins 76 are arranged is slightly larger than the diameter of the semiconductor wafer W. Each guide pin 76 is also formed of quartz. The guide pin 76 may be processed from a quartz ingot integrally with the susceptor 74, or a separately processed one may be attached to the susceptor 74 by welding or the like.

  The four connecting portions 72 erected on the base ring 71 and the lower surface of the peripheral portion of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72, and the holding portion 7 is an integrally formed member of quartz. When the base ring 71 of the holding unit 7 is supported on the wall surface of the chamber 6, the holding unit 7 is attached to the chamber 6. In a state in which the holding unit 7 is mounted on the chamber 6, the substantially disc-shaped susceptor 74 is in a horizontal posture (a posture in which the normal line matches the vertical direction). The semiconductor wafer W carried into the chamber 6 is placed and held in a horizontal posture on the susceptor 74 of the holding unit 7 attached to the chamber 6. The semiconductor wafer W is placed inside a circle formed by the five guide pins 76, thereby preventing a horizontal displacement. Note that the number of guide pins 76 is not limited to five, and may be any number that can prevent misalignment of the semiconductor wafer W.

  As shown in FIGS. 2 and 3, the susceptor 74 has an opening 78 and a notch 77 penetrating vertically. The notch 77 is provided to pass the probe tip of the contact thermometer 130 using a thermocouple. On the other hand, the opening 78 is provided to receive radiation light (infrared light) emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 by the radiation thermometer 120. Further, the susceptor 74 is provided with four through holes 79 through which lift pins 12 of the transfer mechanism 10 to be described later penetrate for the delivery of the semiconductor wafer W.

  FIG. 5 is a plan view of the transfer mechanism 10. FIG. 6 is a side view of the transfer mechanism 10. The transfer mechanism 10 includes two transfer arms 11. The transfer arm 11 has an arc shape that follows the generally annular recess 62. Two lift pins 12 are erected on each transfer arm 11. Each transfer arm 11 can be rotated by a horizontal movement mechanism 13. The horizontal movement mechanism 13 includes a transfer operation position (a position indicated by a solid line in FIG. 5) for transferring the pair of transfer arms 11 to the holding unit 7 and the semiconductor wafer W held by the holding unit 7. It is moved horizontally between the retracted positions (two-dot chain line positions in FIG. 5) that do not overlap in plan view. As the horizontal movement mechanism 13, each transfer arm 11 may be rotated by an individual motor, or a pair of transfer arms 11 may be interlocked by a single motor using a link mechanism. It may be moved.

  The pair of transfer arms 11 are moved up and down together with the horizontal moving mechanism 13 by the lifting mechanism 14. When the elevating mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift pins 12 pass through through holes 79 (see FIGS. 2 and 3) formed in the susceptor 74, and the lift pins The upper end of 12 protrudes from the upper surface of the susceptor 74. On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position, the lift pins 12 are extracted from the through holes 79, and the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open each of them. The transfer arm 11 moves to the retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding unit 7. Since the base ring 71 is placed on the bottom surface of the recess 62, the retracted position of the transfer arm 11 is inside the recess 62. Note that an exhaust mechanism (not shown) is also provided in the vicinity of a portion where the drive unit (the horizontal movement mechanism 13 and the lifting mechanism 14) of the transfer mechanism 10 is provided, and the atmosphere around the drive unit of the transfer mechanism 10 is provided. Is discharged to the outside of the chamber 6.

  Returning to FIG. 1, the flash heating unit 5 provided above the chamber 6 includes a light source including a plurality of (30 in the present embodiment) xenon flash lamps FL inside the housing 51, and an upper part of the light source. And a reflector 52 provided so as to cover. A lamp light emission window 53 is mounted on the bottom of the casing 51 of the flash heating unit 5. The lamp light emission window 53 constituting the floor of the flash heating unit 5 is a plate-like quartz window made of quartz. By installing the flash heating unit 5 above the chamber 6, the lamp light emission window 53 faces the upper chamber window 63. The flash lamp FL irradiates the heat treatment space 65 with flash light from above the chamber 6 through the lamp light emission window 53 and the upper chamber window 63.

  Each of the plurality of flash lamps FL is a rod-shaped lamp having a long cylindrical shape, and the longitudinal direction of each of the flash lamps FL is along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

  The xenon flash lamp FL has a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, and an outer peripheral surface of the glass tube. And a triggered electrode. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions even if electric charges are accumulated in the capacitor. However, when the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor flows instantaneously in the glass tube, and light is emitted by excitation of atoms or molecules of xenon at that time. In such a xenon flash lamp FL, the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse of 0.1 to 100 milliseconds, so that the continuous lighting such as the halogen lamp HL is possible. It has the characteristic that it can irradiate extremely strong light compared with a light source.

  In addition, the reflector 52 is provided above the plurality of flash lamps FL so as to cover all of them. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL toward the heat treatment space 65. The reflector 52 is formed of an aluminum alloy plate, and the surface (the surface facing the flash lamp FL) is roughened by blasting.

  The halogen heating unit 4 provided below the chamber 6 incorporates a plurality (40 in this embodiment) of halogen lamps HL inside the housing 41. The halogen heating unit 4 is a light irradiation unit that performs light irradiation on the heat treatment space 65 from below the chamber 6 through the lower chamber window 64 by a plurality of halogen lamps HL.

  FIG. 7 is a plan view showing the arrangement of the plurality of halogen lamps HL. In the first embodiment, a plurality of halogen lamps HL are arranged in a region wider than the main surface of the disk-shaped semiconductor wafer W held by the holding unit 7 (that is, a circle having a diameter of 300 mm). A plurality of halogen lamps HL are arranged in a region facing the lower surface of the main surface of the semiconductor wafer W.

  As shown in FIGS. 1 and 7, in the first embodiment, 40 halogen lamps HL are arranged in two upper and lower stages. Twenty halogen lamps HL are arranged in the upper stage (first stage) close to the holding unit 7, and twenty halogen lamps HL are arranged in the lower stage (second stage) farther from the holding unit 7 than the upper stage. Has been. Each halogen lamp HL is a rod-shaped lamp having a long cylindrical shape. The 20 halogen lamps HL in both the upper and lower stages are arranged so that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding unit 7 (that is, along the horizontal direction). Yes. Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper stage and the lower stage is a horizontal plane.

  Further, the lamp group composed of the upper halogen lamp HL and the lamp group composed of the lower halogen lamp HL are arranged so as to intersect in a lattice pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of the 20 halogen lamps HL arranged in the upper stage and the longitudinal direction of the 20 halogen lamps HL arranged in the lower stage are orthogonal to each other. Yes. In the present embodiment, in the upper stage, 20 halogen lamps HL are arranged in parallel so that the lamp longitudinal direction is along the Y-axis direction, and in the lower stage, 20 halogen lamps HL are arranged so that the lamp longitudinal direction is along the X-axis direction. Are arranged in parallel.

  Further, as shown in FIG. 7, the arrangement density of the halogen lamps HL in the region facing the peripheral portion is higher than the region facing the central portion of the semiconductor wafer W held by the holding portion 7 in both the upper stage and the lower stage. Yes. That is, in both the upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter in the peripheral part than in the central part of the lamp array.

  The halogen lamp HL is a filament-type light source that emits light by making the filament incandescent by energizing the filament disposed inside the glass tube. Inside the glass tube, a gas obtained by introducing a trace amount of a halogen element (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is enclosed. By introducing a halogen element, it is possible to set the filament temperature to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has a characteristic that it has a longer life than a normal incandescent bulb and can continuously radiate strong light. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life, and by arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the upper semiconductor wafer W becomes excellent.

  Further, a reflector 43 is also provided in the housing 41 of the halogen heating unit 4 below the two-stage halogen lamp HL (FIG. 1). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL toward the heat treatment space 65.

  In the first embodiment, the louver 21 is provided between the halogen heating unit 4 and the lower chamber window 64 of the chamber 6. FIG. 8 is a perspective view showing an overall overview of the louver 21 of the first embodiment. The louver 21 of the first embodiment is a cylindrical member having upper and lower open ends. The louver 21 is made of a material that is opaque to the light emitted from the halogen lamp HL of the halogen heating unit 4, and is made of, for example, opaque quartz in which many fine bubbles are included in quartz glass. . The size of the louver 21 can be set appropriately according to the arrangement configuration of the chamber 6 and the halogen heating unit 4. The outer diameter of the cylinder of the louver 21 only needs to be smaller than the region where the halogen lamp HL is disposed. For example, in the first embodiment, the outer diameter of the louver 21 is 300 mm, which is the same as the diameter of the semiconductor wafer W, and the inner diameter is 294 mm. Further, the height of the louver 21 may be, for example, 15 mm to 25 mm (16 mm in the first embodiment).

  As shown in FIG. 1, a louver stage 22 is provided at the upper end of the casing 41 of the halogen heating unit 4. The louver stage 22 is a flat plate member made of quartz glass that is transparent to light emitted from the halogen lamp HL. A louver 21 is installed on the upper surface of the louver stage 22. The louver 21 is provided so that the central axis CX of the cylinder passes through the center of the semiconductor wafer W held by the holding unit 7. The plurality of halogen lamps HL of the halogen heating unit 4 are arranged in a region facing the lower surface of the semiconductor wafer W held by the holding unit 7. Therefore, the central axis CX of the louver 21 also passes through the center of the arrangement of the plurality of halogen lamps HL.

  Further, the control unit 3 controls the various operation mechanisms provided in the heat treatment apparatus 1. The configuration of the control unit 3 as hardware is the same as that of a general computer. That is, the control unit 3 stores a CPU that performs various arithmetic processes, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, control software, data, and the like. It has a magnetic disk. The processing in the heat treatment apparatus 1 proceeds as the CPU of the control unit 3 executes a predetermined processing program.

  In addition to the above configuration, the heat treatment apparatus 1 prevents an excessive temperature rise in the halogen heating unit 4, the flash heating unit 5, and the chamber 6 due to thermal energy generated from the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer W. Therefore, various cooling structures are provided. For example, the wall of the chamber 6 is provided with a water-cooled tube (not shown). Further, the halogen heating unit 4 and the flash heating unit 5 have an air cooling structure in which a gas flow is formed inside to exhaust heat. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash heating unit 5 and the upper chamber window 63.

  Next, a processing procedure for the semiconductor wafer W in the heat treatment apparatus 1 will be described. The semiconductor wafer W to be processed here is a semiconductor substrate to which impurities (ions) are added by an ion implantation method. The activation of the impurities is performed by flash light irradiation heat treatment (annealing) by the heat treatment apparatus 1. The processing procedure of the heat treatment apparatus 1 described below proceeds by the control unit 3 controlling each operation mechanism of the heat treatment apparatus 1.

  First, the air supply valve 84 is opened, and the exhaust valves 89 and 192 are opened to start supply and exhaust of air into the chamber 6. When the valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65. When the valve 89 is opened, the gas in the chamber 6 is exhausted from the gas exhaust hole 86. Thereby, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the chamber 6 flows downward and is exhausted from the lower part of the heat treatment space 65.

  Further, when the valve 192 is opened, the gas in the chamber 6 is also exhausted from the transfer opening 66. Further, the atmosphere around the drive unit of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown). Note that nitrogen gas is continuously supplied to the heat treatment space 65 during the heat treatment of the semiconductor wafer W in the heat treatment apparatus 1, and the supply amount is appropriately changed according to the treatment process.

  Subsequently, the gate valve 185 is opened to open the transfer opening 66, and the semiconductor wafer W after ion implantation is transferred into the heat treatment space 65 in the chamber 6 through the transfer opening 66 by a transfer robot outside the apparatus. The semiconductor wafer W carried in by the carrying robot advances to a position directly above the holding unit 7 and stops. Then, when the pair of transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer operation position and rises, the lift pins 12 protrude from the upper surface of the susceptor 74 through the through holes 79 and the semiconductor wafer W. Receive.

  After the semiconductor wafer W is placed on the lift pins 12, the transfer robot leaves the heat treatment space 65 and the transfer opening 66 is closed by the gate valve 185. When the pair of transfer arms 11 are lowered, the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding unit 7 and held from below in a horizontal posture. The semiconductor wafer W is held by the holding unit 7 with the surface on which the pattern is formed and impurities are implanted as the upper surface. The semiconductor wafer W is held inside the five guide pins 76 on the upper surface of the susceptor 74. The pair of transfer arms 11 lowered to below the susceptor 74 is retracted to the retracted position, that is, inside the recess 62 by the horizontal movement mechanism 13.

  After the semiconductor wafer W is held horizontally from below by the holding unit 7 made of quartz, the 40 halogen lamps HL of the halogen heating unit 4 are turned on all at once and preheating (assist heating) is started. Is done. Halogen light emitted from the halogen lamp HL passes through the louver stage 22, the lower chamber window 64 and the susceptor 74 made of quartz, and is irradiated from the back surface (main surface opposite to the front surface) of the semiconductor wafer W. Is done. By receiving light from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. In addition, since the transfer arm 11 of the transfer mechanism 10 is retracted to the inside of the recess 62, there is no obstacle to heating by the halogen lamp HL.

  When preheating with the halogen lamp HL is performed, the temperature of the semiconductor wafer W is measured by the contact thermometer 130. That is, a contact thermometer 130 incorporating a thermocouple contacts the lower surface of the semiconductor wafer W held by the holding unit 7 via the notch 77 of the susceptor 74 to measure the temperature of the wafer being heated. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3. The controller 3 monitors whether or not the temperature of the semiconductor wafer W that is heated by light irradiation from the halogen lamp HL has reached a predetermined preheating temperature T1. The preheating temperature T1 is set to about 200 ° C. to 800 ° C., preferably about 350 ° C. to 600 ° C. (in this embodiment, 600 ° C.) at which impurities added to the semiconductor wafer W are not likely to diffuse due to heat. . Note that when the temperature of the semiconductor wafer W is increased by light irradiation from the halogen lamp HL, temperature measurement by the radiation thermometer 120 is not performed. This is because the halogen light irradiated from the halogen lamp HL enters the radiation thermometer 120 as disturbance light, and accurate temperature measurement cannot be performed.

  By the way, it is recognized that the temperature of the peripheral portion tends to be lower in the semiconductor wafer W being preheated than in the central portion. Possible causes of such a phenomenon include heat radiation from the peripheral edge of the semiconductor wafer W or heat conduction from the peripheral edge of the semiconductor wafer W to the susceptor 74 having a relatively low temperature.

  For this reason, the arrangement density of the halogen lamps HL in the halogen heating unit 4 is configured such that the region facing the peripheral portion is higher than the region facing the central portion of the semiconductor wafer W. The amount of light toward the peripheral portion is larger than the central portion. Further, since the inner peripheral surface of the reflection ring 69 attached to the chamber side portion 61 is a mirror surface, the amount of light reflected toward the peripheral portion of the semiconductor wafer W is also increased by the inner peripheral surface of the reflection ring 69. .

  Thus, even if the amount of halogen irradiated to the peripheral portion is larger than the central portion of the semiconductor wafer W, it is still difficult to eliminate the temperature drop at the peripheral portion of the semiconductor wafer W. This tendency becomes more prominent as the distance between the halogen lamp HL and the semiconductor wafer W held by the holding unit 7 increases.

  For this reason, in the first embodiment, an opaque cylindrical louver 21 is provided between the halogen heating unit 4 and the chamber 6, and light traveling from the halogen heating unit 4 to the semiconductor wafer W held by the holding unit 7. Is partially shaded. FIG. 9 is a diagram schematically showing light shielding by the louver 21. This figure is an XZ cross section cut at a position where the diameter of the cylindrical louver 21 coincides with the X-axis direction.

  As described above, in this embodiment, a plurality of halogen lamps HL are arranged in a region wider than the main surface of the disk-shaped semiconductor wafer W, and the outer diameter of the louver 21 is the same as the diameter of the semiconductor wafer W. is there. Accordingly, the halogen lamps HL also exist outside the cylindrical louver 21. In the first embodiment, three cylinders of the louver 21 are provided from both ends of the arrangement of the plurality of halogen lamps HL in each of the upper stage and the lower stage. It is provided outside the outer wall.

  By providing the louver 21, as indicated by a dotted arrow in FIG. 9, an inner region including the vicinity of the center portion of the semiconductor wafer W from the halogen lamp HL provided outside the louver 21 (region inside the peripheral portion). The light traveling toward is blocked by the opaque wall of the louver 21. On the other hand, as shown by the solid line arrow in FIG. 9, the light traveling from the halogen lamp HL provided outside the louver 21 toward the peripheral edge of the semiconductor wafer W is not shielded. As a result, by providing the louver 21, the light traveling from the halogen heating unit 4 toward the peripheral edge of the semiconductor wafer W hardly decreases, whereas the light traveling toward the inner region decreases and the heating of the inner region is weakened. It becomes. As a result, the peripheral edge of the semiconductor wafer W is relatively strongly heated, and the in-plane temperature distribution of the semiconductor wafer W during preheating can be effectively eliminated. As is clear from FIG. 9, the light traveling from the halogen lamp HL provided on the inner side of the wall surface of the louver 21 to the back surface of the semiconductor wafer W is not affected by the louver 21 (the semiconductor is shielded from light). Light traveling outward from wafer W).

  When a predetermined time elapses after the temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp FL of the flash heating unit 5 irradiates the surface of the semiconductor wafer W with flash light. At this time, a part of the flash light emitted from the flash lamp FL goes directly into the chamber 6, and the other part is once reflected by the reflector 52 and then goes into the chamber 6. Flash heating of the semiconductor wafer W is performed by irradiation.

  Since the flash heating is performed by irradiation with flash light (flash light) from the flash lamp FL, the surface temperature of the semiconductor wafer W can be increased in a short time. That is, the flash light irradiated from the flash lamp FL is converted into a light pulse in which the electrostatic energy stored in the capacitor in advance is extremely short, and the irradiation time is extremely short, about 0.1 milliseconds to 100 milliseconds. It is a strong flash. Then, the surface temperature of the semiconductor wafer W that is flash-heated by flash light irradiation from the flash lamp FL instantaneously rises to a processing temperature T2 of 1000 ° C. or more, and the impurities injected into the semiconductor wafer W are activated. Later, the surface temperature drops rapidly. As described above, in the heat treatment apparatus 1, the surface temperature of the semiconductor wafer W can be raised and lowered in a very short time, so that the impurities are activated while suppressing diffusion of the impurities injected into the semiconductor wafer W due to heat. Can do. Since the time required for the activation of impurities is extremely short compared to the time required for the thermal diffusion, the activation is possible even in a short time in which diffusion of about 0.1 millisecond to 100 millisecond does not occur. Complete.

  In the first embodiment, the louver 21 shields a part of the light from the halogen heating unit 4 toward the inner region of the semiconductor wafer W to make the in-plane temperature distribution of the semiconductor wafer W uniform in the preheating stage. The in-plane temperature distribution on the surface of the semiconductor wafer W at the time of flash light irradiation can be made uniform.

  After the end of the flash heat treatment, the halogen lamp HL is turned off after a predetermined time has elapsed. Thereby, the temperature of the semiconductor wafer W is rapidly lowered from the preheating temperature T1. The temperature of the semiconductor wafer W during the temperature decrease is measured by the contact thermometer 130 or the radiation thermometer 120, and the measurement result is transmitted to the control unit 3. The controller 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature from the measurement result. Then, after the temperature of the semiconductor wafer W is lowered to a predetermined temperature or lower, the pair of transfer arms 11 of the transfer mechanism 10 is moved horizontally from the retracted position to the transfer operation position again and lifted, whereby the lift pins 12 are moved to the susceptor. The semiconductor wafer W protruding from the upper surface of 74 and subjected to the heat treatment is received from the susceptor 74. Subsequently, the transfer opening 66 closed by the gate valve 185 is opened, and the semiconductor wafer W placed on the lift pins 12 is unloaded by the transfer robot outside the apparatus, and the heat treatment of the semiconductor wafer W in the heat treatment apparatus 1 is performed. Is completed.

  In the first embodiment, an opaque cylindrical louver 21 is provided between the halogen heating unit 4 and the chamber 6, and light traveling from the halogen lamp HL provided outside the louver 21 toward the inner region of the semiconductor wafer W. Is shielded from light. When the preheating is performed by the halogen heating unit 4 without providing the louver 21, the temperature of the peripheral portion tends to be lower than the inner region of the semiconductor wafer W. Therefore, an opaque cylindrical louver 21 is provided, and a part of light directed from the halogen heating unit 4 toward the inner region of the semiconductor wafer W is shielded by the louver 21, so that the in-plane temperature distribution of the semiconductor wafer W at the time of preheating is provided. Can be made uniform. As a result, the in-plane temperature distribution on the surface of the semiconductor wafer W during flash heating can be made uniform.

Second Embodiment
Next, a second embodiment of the present invention will be described. The overall configuration of the heat treatment apparatus of the second embodiment is substantially the same as that of the first embodiment. The processing procedure for the semiconductor wafer W in the heat treatment apparatus of the second embodiment is also the same as that of the first embodiment. The second embodiment differs from the first embodiment in the shape of the louvers.

  FIG. 10 is a perspective view showing an overall overview of the louver 121 of the second embodiment. The louver 121 of the second embodiment has two notches 123 formed at the upper end of a cylindrical member similar to the first embodiment. The louver 121 is formed of a material that is opaque to the light emitted from the halogen lamp HL of the halogen heating unit 4, and is formed of, for example, opaque quartz in which many fine bubbles are included in quartz glass. .

  The louver 121 is provided between the halogen heating unit 4 and the lower chamber window 64 of the chamber 6. Specifically, the louver 121 is installed on the upper surface of the louver stage 22 provided at the upper end of the halogen heating unit 4. The louver 121 is provided so that the central axis CX passes through the center of the semiconductor wafer W held by the holding unit 7. Further, the central axis CX of the louver 21 passes through the center of the arrangement of the plurality of halogen lamps HL.

  A cutout portion 123 is formed at the upper end of the louver 121 (that is, the end portion closer to the holding portion 7) so as to face each other along the circular radial direction. In the second embodiment, the louver 121 is installed on the louver stage 22 so that the two notches 123 face each other along the X-axis direction. In other words, as shown in FIG. 11, at the upper end of the louver 121 in a circular shape, a notch 123 is formed in both end regions along the longitudinal direction of the plurality of halogen lamps HL arranged at the lower stage of the halogen heating unit 4. ing.

  Also in the second embodiment, an opaque cylindrical louver 121 is provided between the halogen heating unit 4 and the chamber 6, and light traveling from the halogen heating unit 4 to the semiconductor wafer W held by the holding unit 7 during the preheating. Is partially shaded. 12 and 13 are diagrams schematically showing light shielding by the louver 121 of the second embodiment. 12 is an XZ cross section cut at a position where the diameter of the louver 121 matches the X-axis direction, and FIG. 13 is a YZ cross section cut at a position where the diameter of the louver 121 matches the Y-axis direction.

  Similarly to the first embodiment, three pieces from both ends of the arrangement of the plurality of halogen lamps HL are provided outside the cylindrical outer wall of the louver 121 in each of the upper stage and the lower stage. As shown in FIG. 13, in the YZ plane parallel to the upper halogen lamp HL, the notch 123 is not formed, so the height of the louver 121 is higher than the XZ plane. Here, the distance from the halogen lamp HL arranged at the lower stage to the louver 121 is naturally longer than the distance from the halogen lamp HL arranged at the upper stage to the louver 121. For this reason, the angle α at which the wall surface of the louver 121 is seen in the height direction from the lower halogen lamp HL is smaller than the angle β at which the wall surface of the louver 121 is seen in the height direction from the upper halogen lamp HL immediately above it. Therefore, in the back surface of the semiconductor wafer W, the area shielded by the wall surface of the louver 121 is smaller in the lower halogen lamp HL than in the upper halogen lamp HL.

  With respect to the illuminance distribution in the Y-axis direction of the semiconductor wafer W, light irradiation by the lower halogen lamps HL arranged along the X-axis direction perpendicular thereto is dominant. With respect to light irradiation from the lower halogen lamp HL, the area shielded by the wall surface of the louver 121 is relatively small, so that a relatively large amount of light is generated on the back surface of the semiconductor wafer W even if the louver 121 is high. It will be irradiated about an axial direction.

  On the other hand, as shown in FIG. 12, in the XZ plane parallel to the lower halogen lamp HL, the notch 123 is formed, so the height of the louver 121 is lower than the YZ plane. With respect to the illuminance distribution in the X-axis direction of the semiconductor wafer W, light irradiation by the upper halogen lamps HL arranged along the Y-axis direction perpendicular thereto is dominant. Regarding light irradiation from the upper halogen lamp HL, the area shielded by the wall surface of the louver 121 is relatively large, but the height of the louver 121 is lower than the YZ plane on the XZ plane. For this reason, the light irradiation from the upper halogen lamp HL on the XZ plane is blocked by the wall surface of the louver 121 in the region where the light irradiation from the lower halogen lamp HL is blocked on the YZ plane by the wall surface of the louver 121. It is almost the same as the area. Therefore, the amount of light emitted from the upper halogen lamp HL in the X-axis direction on the back surface of the semiconductor wafer W is approximately the same as the amount of light emitted from the lower halogen lamp HL in the Y-axis direction on the back surface of the semiconductor wafer W.

  As a result, the illuminance distribution in the circumferential direction of the back surface of the semiconductor wafer W at the time of preheating becomes uniform, and the in-plane temperature distribution of the semiconductor wafer W can be more effectively eliminated. By providing the louver 121, as in the first embodiment, the light traveling from the halogen heating unit 4 to the inner region of the semiconductor wafer W is reduced, and the illuminance distribution in the radial direction on the back surface of the semiconductor wafer W is made uniform. Of course, it is possible to obtain the effect.

  As described above, also in the second embodiment, the louver 121 shields a part of the light from the halogen heating unit 4 toward the inner region of the semiconductor wafer W, thereby uniforming the in-plane temperature distribution of the semiconductor wafer W in the preheating stage. Therefore, the in-plane temperature distribution on the surface of the semiconductor wafer W at the time of flash light irradiation can be made uniform.

  In particular, in the second embodiment, the distance from the louver 121 to the upper stage halogen lamp HL is provided by providing the notch 123 in both end regions of the louver 121 along the longitudinal direction of the plurality of halogen lamps HL arranged in the lower stage. And unevenness in the illuminance distribution due to the difference between the distance to the lower halogen lamp HL is also eliminated. For this reason, the in-plane temperature distribution of the semiconductor wafer W at the time of preliminary heating by the halogen heating unit 4 can be made more uniform.

<Modification>
While the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the spirit of the present invention. For example, in the second embodiment, the cutout portion 123 is formed at the upper end of the louver 121, but the cutout portion 123 may be formed at the lower end of the louver 121 as shown in FIG. In the example of FIG. 14, a notch 123 is formed at the lower end of the louver 121, that is, at the end closer to the halogen heating unit 4. As in the second embodiment, two cutout portions 123 are formed so as to face each other along the X-axis direction. In other words, at the lower circular end of the louver 121, the notch 123 is formed in both end regions along the longitudinal direction of the plurality of halogen lamps HL arranged at the lower stage of the halogen heating unit 4.

  Even if the notch 123 is formed at the lower end of the louver 121, the region where the light irradiation from the upper halogen lamp HL is blocked by the wall surface of the louver 121 is the same as that of the lower halogen lamp HL, as in the second embodiment. Is approximately the same as the region where the light irradiation is blocked by the wall surface of the louver 121. For this reason, the illuminance distribution in the circumferential direction of the back surface of the semiconductor wafer W during the preheating is also uniform, and the in-plane temperature distribution of the semiconductor wafer W can be more effectively eliminated.

  Further, the shape of the notch formed in the louver 121 may be as shown in FIG. 15 or FIG. In the example shown in FIG. 15, the shape of the notch 223 is a sine curve. Moreover, in the example shown in FIG. 16, the shape of the notch 323 is a triangle.

  As described above, the light irradiation by the lower halogen lamp HL is dominant for the illuminance distribution in the Y-axis direction of the semiconductor wafer W during the preheating, and the light irradiation by the upper halogen lamp HL is performed for the illuminance distribution in the X-axis direction. Irradiation becomes dominant. As for the illuminance distribution in other directions, the effects of light irradiation are mixed with the upper and lower halogen lamps HL, and the degree of illuminance distribution in the X-axis direction and the illuminance distribution in the Y-axis direction depend on the angle from the X-axis direction. Between. The notch 123 is formed in the second embodiment because light irradiation from the upper halogen lamp HL with a larger angle looking into the wall surface of the louver 121 in the height direction is blocked by the wall surface of the louver 121. This is to make the area to be smaller.

  Therefore, as the shape of the notch, the portion orthogonal to the longitudinal direction (X-axis direction) of the plurality of halogen lamps HL arranged at the lower stage of the end portion of the louver 121 is deepest and arranged at the upper stage. It is preferable that the portion perpendicular to the longitudinal direction (Y-axis direction) of the plurality of halogen lamps HL is the shallowest, and the depth is continuously and gently changed during that period. The sine curve notch 223 shown in FIG. 15 and the triangular notch 323 shown in FIG. 16 realize such a shape. If the notch 223 of FIG. 15 or the notch 323 of FIG. 16 is formed, the amount of light irradiated on the back surface of the semiconductor wafer W from the upper halogen lamp HL and the lower halogen lamp HL over the entire circumference of the louver 121. The sum is uniform. As a result, the illuminance distribution in the circumferential direction of the back surface of the semiconductor wafer W during preheating can be made more uniform.

  In each of the above embodiments, the flash heating unit 5 is provided with 30 flash lamps FL. However, the present invention is not limited to this, and the number of flash lamps FL may be an arbitrary number. it can. The flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. Further, the number of halogen lamps HL provided in the halogen heating unit 4 is not limited to 40, and may be any number as long as a plurality of halogen lamps HL are arranged in the upper and lower stages.

  The substrate to be processed by the heat treatment apparatus according to the present invention is not limited to a semiconductor wafer, and may be a glass substrate or a solar cell substrate used for a flat panel display such as a liquid crystal display device. Further, the technique according to the present invention may be applied to bonding of metal and silicon or crystallization of polysilicon.

  Further, the heat treatment technique according to the present invention is not limited to the flash lamp annealing apparatus, but is also applied to a heat source apparatus other than a flash lamp such as a single wafer type lamp annealing apparatus or a CVD apparatus using a halogen lamp. be able to. In particular, the technique according to the present invention can be suitably applied to a backside annealing apparatus in which a halogen lamp is disposed below the chamber and light is irradiated from the back surface of the semiconductor wafer to perform heat treatment.

DESCRIPTION OF SYMBOLS 1 Heat processing apparatus 3 Control part 4 Halogen heating part 5 Flash heating part 6 Chamber 7 Holding part 10 Transfer mechanism 21,121 Louver 22 Louver stage 65 Heat treatment space 123,223,323 Notch part CX Center axis FL Flash lamp HL Halogen lamp W Semiconductor wafer

Claims (6)

A heat treatment apparatus for heating a substrate by irradiating light on a disk-shaped substrate,
A chamber for housing the substrate;
A holding unit for holding the substrate in the chamber;
A light irradiation unit in which a plurality of rod-shaped lamps are arranged in a region facing the main surface wider than the main surface of the substrate held by the holding unit;
A cylindrical light-shielding member that is provided so that a central axis passes through the center of the substrate between the light irradiation unit and the holding unit, and is opaque to the light emitted from the light irradiation unit;
With
In the light irradiation unit, a plurality of rod-shaped lamps are arranged in each of the first stage and the second stage in order from the holding unit,
The plurality of bar lamps arranged in the first stage and the plurality of bar lamps arranged in the second stage are provided to be orthogonal to each other,
A heat treatment apparatus, wherein notches are formed in both end regions along a longitudinal direction of the plurality of rod-shaped lamps arranged in the second stage among the circular end portions of the light shielding member. The heat treatment apparatus according to claim 1, wherein
Of the end portion, the portion perpendicular to the longitudinal direction of the plurality of rod-shaped lamps arranged in the second stage is deepest, and the portion perpendicular to the longitudinal direction of the plurality of rod-shaped lamps arranged in the first stage is A heat treatment apparatus characterized in that a notch is formed so as to be shallowest. In the heat treatment apparatus according to claim 1 or 2,
A heat treatment apparatus, wherein a notch portion is formed at an end portion of the light shielding member on a side close to the holding portion. In the heat treatment apparatus according to claim 1 or 2,
A heat treatment apparatus, wherein a notch portion is formed at an end portion of the light shielding member on a side close to the light irradiation portion. In the heat processing apparatus in any one of Claims 1-4,
A heat treatment apparatus, wherein the light shielding member is made of opaque quartz. In the heat processing apparatus in any one of Claims 1-5,
The plurality of bar lamps arranged in the light irradiation unit are halogen lamps,
A heat treatment apparatus, further comprising: a flash lamp that irradiates flash light onto a substrate preheated by light irradiation from the light irradiation unit.

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