JP2014107445A5 - - Google Patents
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- Publication number
- JP2014107445A5 JP2014107445A5 JP2012260066A JP2012260066A JP2014107445A5 JP 2014107445 A5 JP2014107445 A5 JP 2014107445A5 JP 2012260066 A JP2012260066 A JP 2012260066A JP 2012260066 A JP2012260066 A JP 2012260066A JP 2014107445 A5 JP2014107445 A5 JP 2014107445A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- semiconductor
- photodiode array
- surface side
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 27
- 239000000758 substrate Substances 0.000 claims 6
- 239000012535 impurity Substances 0.000 claims 2
- 238000001514 detection method Methods 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012260066A JP6068954B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
| US14/647,263 US10418496B2 (en) | 2012-11-28 | 2013-11-26 | Photodiode array |
| PCT/JP2013/081788 WO2014084212A1 (ja) | 2012-11-28 | 2013-11-26 | フォトダイオードアレイ |
| CN201380050931.6A CN104685630B (zh) | 2012-11-28 | 2013-11-26 | 光电二极管阵列 |
| DE112013005690.9T DE112013005690B4 (de) | 2012-11-28 | 2013-11-26 | Fotodiodenanordnung |
| TW102143588A TWI591808B (zh) | 2012-11-28 | 2013-11-28 | Photo diode array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012260066A JP6068954B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014107445A JP2014107445A (ja) | 2014-06-09 |
| JP2014107445A5 true JP2014107445A5 (cg-RX-API-DMAC7.html) | 2015-09-10 |
| JP6068954B2 JP6068954B2 (ja) | 2017-01-25 |
Family
ID=50827848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012260066A Active JP6068954B2 (ja) | 2012-11-28 | 2012-11-28 | フォトダイオードアレイ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10418496B2 (cg-RX-API-DMAC7.html) |
| JP (1) | JP6068954B2 (cg-RX-API-DMAC7.html) |
| CN (1) | CN104685630B (cg-RX-API-DMAC7.html) |
| DE (1) | DE112013005690B4 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI591808B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014084212A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6068955B2 (ja) * | 2012-11-28 | 2017-01-25 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
| CN105914250B (zh) * | 2016-06-12 | 2017-05-03 | 中国科学院上海技术物理研究所 | 一种铟镓砷短波红外探测器 |
| KR102670396B1 (ko) * | 2017-09-29 | 2024-05-30 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자에 대한 다중 셀 검출기 |
| JP7341927B2 (ja) * | 2020-03-12 | 2023-09-11 | キオクシア株式会社 | 半導体記憶装置 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6541755B1 (en) * | 1998-11-25 | 2003-04-01 | Ricoh Company, Ltd. | Near field optical probe and manufacturing method thereof |
| JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびｘ線ｃｔ装置 |
| GB2392307B8 (en) | 2002-07-26 | 2006-09-20 | Detection Technology Oy | Semiconductor structure for imaging detectors |
| JP2004057507A (ja) * | 2002-07-29 | 2004-02-26 | Toshiba Corp | Ｘ線検出装置、貫通電極の製造方法及びｘ線断層撮影装置 |
| JP4440554B2 (ja) * | 2002-09-24 | 2010-03-24 | 浜松ホトニクス株式会社 | 半導体装置 |
| US6853046B2 (en) | 2002-09-24 | 2005-02-08 | Hamamatsu Photonics, K.K. | Photodiode array and method of making the same |
| EP1551060B1 (en) | 2002-09-24 | 2012-08-15 | Hamamatsu Photonics K. K. | Photodiode array and method for manufacturing same |
| JP4220808B2 (ja) * | 2003-03-10 | 2009-02-04 | 浜松ホトニクス株式会社 | ホトダイオードアレイおよびその製造方法並びに放射線検出器 |
| JP4247017B2 (ja) * | 2003-03-10 | 2009-04-02 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
| US7656001B2 (en) * | 2006-11-01 | 2010-02-02 | Udt Sensors, Inc. | Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays |
| US7655999B2 (en) * | 2006-09-15 | 2010-02-02 | Udt Sensors, Inc. | High density photodiodes |
| US7057254B2 (en) * | 2003-05-05 | 2006-06-06 | Udt Sensors, Inc. | Front illuminated back side contact thin wafer detectors |
| GB2449853B (en) | 2007-06-04 | 2012-02-08 | Detection Technology Oy | Photodetector for imaging system |
| US7791159B2 (en) | 2007-10-30 | 2010-09-07 | Panasonic Corporation | Solid-state imaging device and method for fabricating the same |
| JP4808760B2 (ja) * | 2008-11-19 | 2011-11-02 | 浜松ホトニクス株式会社 | 放射線検出器の製造方法 |
| EP2346094A1 (en) * | 2010-01-13 | 2011-07-20 | FEI Company | Method of manufacturing a radiation detector |
| EP2592661B8 (en) * | 2011-11-11 | 2019-05-22 | ams AG | Lateral avalanche photodiode device and method of production |
-
2012
- 2012-11-28 JP JP2012260066A patent/JP6068954B2/ja active Active
-
2013
- 2013-11-26 WO PCT/JP2013/081788 patent/WO2014084212A1/ja not_active Ceased
- 2013-11-26 CN CN201380050931.6A patent/CN104685630B/zh active Active
- 2013-11-26 DE DE112013005690.9T patent/DE112013005690B4/de active Active
- 2013-11-26 US US14/647,263 patent/US10418496B2/en active Active
- 2013-11-28 TW TW102143588A patent/TWI591808B/zh not_active IP Right Cessation